TWI707211B - Pattern exposure device - Google Patents

Abstract

Equipped with: a first support member that supports one of the mask and the substrate along the first surface that is curved into a cylindrical surface with a predetermined curvature; the second support member that supports one of the mask and the substrate along the predetermined second surface Supporting the other of the photomask and the substrate; a moving mechanism that rotates the first support member and moves the second support member to move the photomask and the substrate in the scanning exposure direction; the projection optical system, by including and perpendicular to The projection beam of the chief ray whose line is roughly parallel to the center of the scanning exposure direction of the projection area forms the image of the pattern on the predetermined projection image surface; the moving mechanism is to set the moving speed of the first supporting member and the moving speed of the second supporting member. The moving speed of the projected image surface of the pattern and the exposed surface of the substrate on the side with the larger curvature or the flat side is relatively slower than that of the other side.

Description

Pattern exposure device

The present invention relates to a substrate processing device, a device manufacturing method, a scanning exposure method, an exposure device, a device manufacturing system, and a device manufacturing method for projecting a pattern of a photomask onto a substrate and exposing the pattern on the substrate.

There is an element manufacturing system that manufactures display elements such as liquid crystal displays or various elements such as semiconductors. The component manufacturing system includes a substrate processing device such as an exposure device. The substrate processing apparatus described in Patent Document 1 projects an image of a pattern formed on a mask arranged in an illumination area onto a substrate or the like arranged in a projection area, and exposes the pattern on the substrate. There are flat and cylindrical masks used in substrate processing equipment.

Among the exposure apparatuses used in the lithography process, there is known an exposure apparatus that uses a cylindrical or cylindrical mask (hereinafter also collectively referred to as a cylindrical mask) to expose a substrate as disclosed in the following patent documents (for example, Patent Literature 2). In addition, there is also known an exposure device that uses a cylindrical mask to continuously expose element patterns for display panels on a flexible long substrate (for example, Patent Document 3).

〔Advanced Technical Literature〕

[Patent Document 1] JP 2007-299918 A

[Patent Document 2] International Publication No. WO2008/029917

[Patent Document 3] JP 2011-221538 A

Here, the substrate processing device can shorten the scanning exposure time for an irradiated area or element area on the substrate by increasing the exposure area (slit-shaped projection area) in the scanning exposure direction, thereby enabling each unit Increase the productivity of the number of substrates processed in time. However, as described in Patent Document 1, if a rotatable cylindrical mask is used in order to improve productivity, the mask pattern is curved into a cylindrical shape. Therefore, if the circumferential direction of the mask pattern (cylindrical shape) is Set the scanning exposure direction to increase the size of the slit-shaped projection area in the scanning exposure direction, and sometimes the quality (image quality) of the pattern that is projected to the substrate will be reduced.

As shown in the aforementioned Patent Document 2, a cylindrical or cylindrical mask has an outer peripheral surface (cylindrical surface) with a certain radius from a predetermined rotation center axis (center line), and an electronic pattern (for example, Semiconductor chip, etc.) mask pattern. When the photomask pattern is transferred on the photosensitive substrate (wafer), the cylindrical photomask is rotated synchronously around the central axis of rotation while the substrate is moved in one direction at a predetermined speed. In this case, if the diameter of the cylindrical mask is set so that the entire circumference of the outer peripheral surface of the cylindrical mask corresponds to the length of the substrate, the exposure mask pattern can be continuously scanned along the length of the substrate. In addition, as shown in Patent Document 3, if such a cylindrical mask is used, it is possible to move the long flexible sheet substrate (having a photosensitive layer) in the longitudinal direction at a predetermined speed while synchronizing with the speed. Make the cylindrical mask, that is, repeatedly and continuously expose the pattern for the display panel on the sheet substrate. As mentioned above, in the case of using a cylindrical mask, it is expected that the efficiency of the exposure processing of the substrate or the working time will be improved, and the productivity of electronic components, display panels, etc. will be improved.

However, especially when exposing the mask pattern for the display panel, the screen size of the display panel varies from several inches to tens of inches, and the area size or aspect ratio of the mask pattern used for it is also There are all kinds. In this case, if the diameter of the cylindrical mask that can be installed in the exposure device or the size in the direction of the central axis of rotation are uniquely determined, it is difficult to efficiently arrange the mask pattern area on the cylinder corresponding to display panels of various sizes. The outer circumference of the photomask. For example, in the case of a display panel with a large screen size, even if the mask pattern area of one surface of the display panel can be formed on the outer circumference of the cylindrical mask, in the case of a display panel slightly smaller than this size , The mask pattern area of two sides cannot be formed, and the margin in the circumferential direction (or the direction of the central axis of rotation) increases.

The aspect of the present invention aims to provide a substrate processing apparatus, a device manufacturing method, and a scanning exposure method that can produce high-quality substrates with high productivity.

Another aspect of the present invention is to provide an exposure device, a device manufacturing system, and a device manufacturing method using such an exposure device that can mount cylindrical masks of different diameters.

According to a first aspect of the present invention, there is provided a substrate processing apparatus including a projection optical system for projecting a light beam from a pattern of a mask arranged in an illumination area of illuminating light onto a projection area where a substrate is arranged, characterized in that: The first support member supports one of the photomask and the substrate in one of the illumination area and the projection area along the first surface that is curved into a cylindrical surface with a predetermined curvature; second The supporting member supports the other of the photomask and the substrate in the other of the illumination area and the projection area along a predetermined second surface; the moving mechanism rotates the first supporting member , Move one of the photomask and the substrate supported by the first support member in the scanning exposure direction, and move the second support member, so that the photomask and the substrate supported by the second support member The other side moves in the scanning exposure direction; the projection optical system forms the image of the pattern on the predetermined projection image surface; the moving mechanism sets the moving speed of the first supporting member and the moving speed of the second supporting member , So that the moving speed of the projected image surface of the pattern and the exposed surface of the substrate with the larger curvature surface or the flat side is relatively slower than the moving speed of the other.

According to a second aspect of the present invention, there is provided a device manufacturing method, including: forming the pattern of the photomask on the substrate using the substrate processing apparatus of the first aspect; and supplying the substrate to the substrate processing apparatus.

According to a third aspect of the present invention, there is provided a scanning exposure method in which a pattern formed on one surface of a mask curved into a cylindrical shape with a predetermined radius of curvature is projected through a projection optical system to a cylindrical or flat support The surface of the flexible substrate, while moving the mask along one of the curved surfaces at a predetermined speed, while moving the substrate at a predetermined speed along the surface of the substrate supported in the cylindrical or flat shape, The projection image of the pattern of the projection optical system is scanned and exposed to the substrate, and is characterized in that the radius of curvature of the projection image surface formed in the best focus state of the projection image of the pattern of the projection optical system is set to Rm, and The radius of curvature of the surface of the substrate supported in the cylindrical or planar shape is set to Rp, and the moving speed of the pattern image that moves along the projection image surface by the movement of the mask is set to Vm, When the predetermined speed on the surface of the aforementioned substrate is set to Vp, set it to Vm>Vp when Rm<Rp, and set Vm<Vp when Rm>Rp.

According to a fourth aspect of the present invention, there is provided an exposure apparatus including: an illumination optical system that guides the illumination light to a cylindrical mask with a pattern on the outer peripheral surface of a curved surface that is bent at a certain radius of curvature from a predetermined axis; a substrate supporting mechanism, supporting Substrate; a projection optical system that projects the pattern of the cylindrical mask illuminated by the illumination light onto the substrate supported by the substrate support mechanism; a replacement mechanism to replace the cylindrical mask; and an adjustment part, which is replaced in the foregoing When the mechanism replaces the cylindrical mask with a cylindrical mask with a different diameter, at least one of at least a part of the illumination optical system and at least a part of the projection optical system is adjusted.

According to a fifth aspect of the present invention, there is provided an exposure apparatus including: a mask holding mechanism for forming a plurality of cylinders having a pattern on the outer peripheral surface of which is bent into a cylindrical shape with a certain radius of curvature from a predetermined axis, and having different diameters from each other. The mask is installed in a replaceable manner and rotated around the predetermined axis; the lighting system irradiates the pattern of the aforementioned cylindrical mask with illumination light; the substrate support mechanism will illuminate the aforementioned cylindrical mask with the aforementioned illumination light The light-exposed substrate of the aforementioned pattern is supported along the curved surface or plane; and the adjustment part is adapted to adjust at least the predetermined axis and the substrate corresponding to the diameter of the cylindrical mask mounted on the mask holding mechanism The distance of the supporting mechanism.

According to a sixth aspect of the present invention, there is provided a device manufacturing system including: the aforementioned exposure device; and a substrate supply device that supplies the aforementioned substrate to the aforementioned exposure device.

According to a seventh aspect of the present invention, there is provided a device manufacturing method, including: exposing the pattern of the cylindrical mask to the substrate using the exposure device; and processing the exposed substrate to combine with the substrate The aforementioned pattern of the cylindrical mask corresponds to the action of forming elements on the aforementioned substrate.

According to the aspect of the present invention, it is possible to suppress the image position shift (image displacement) caused by either one of the projection image surface forming the pattern image and the surface of the substrate transferring the pattern image being bent in the scanning exposure direction of the substrate, At the same time, a larger exposure width during scanning exposure is obtained, and a substrate with high-quality pattern image transfer can be manufactured with high productivity.

According to other aspects of the present invention, even when cylindrical masks with different diameters within a predetermined range are installed, an exposure device, a device manufacturing system, and a device manufacturing method capable of transferring high-quality patterns can be provided.

1‧‧‧Component Manufacturing System

2‧‧‧Substrate supply device

4‧‧‧Substrate recovery device

5‧‧‧Upper control device

U3‧‧‧Exposure device

M‧‧‧Mask

IR1~IR6‧‧‧Illumination area

IL1~IL6‧‧‧Illumination optical system

ILM‧‧‧Lighting Optical Module

PA1~PA6‧‧‧Projection area

PLM‧‧‧Projection Optical Module

Fig. 1 is a diagram showing the configuration of the component manufacturing system of the first embodiment.

Fig. 2 is a diagram showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment.

FIG. 3 is a diagram showing the arrangement of the illumination area and projection area of the exposure device shown in FIG. 2.

4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure device shown in FIG. 2.

Figure 5 is an exaggerated view showing the state of the illumination beam and the projection beam in the mask.

Fig. 6 is a diagram schematically showing the traveling mode of the illumination beam and the projection beam of the polarization beam splitter in Fig. 4.

FIG. 7 is an explanatory diagram that exaggerates the relationship between the movement of the projection image surface of the mask pattern and the movement of the exposure surface of the substrate.

FIG. 8A is a graph showing an example of changes in the image offset and the difference in the exposure width when there is no difference in the peripheral speed between the projection image surface and the exposure surface.

FIG. 8B is a graph showing an example of the shift amount of the image within the exposure width when the circumferential speed of the projection image surface and the exposure surface are different, and the change of the difference component.

FIG. 8C is a graph showing an example of the change in the difference component of the image within the exposure width when the difference between the peripheral speed of the projection image surface and the exposure surface is changed.

FIG. 9 is a graph showing an example of the contrast ratio change within the exposure width of the pattern projection image that changes due to the difference in the peripheral speed of the projection image surface and the exposure surface.

Fig. 10 is a diagram showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the second embodiment.

FIG. 11 is an explanatory diagram that exaggerates the relationship between the movement of the projection image surface of the mask pattern and the movement of the exposure surface of the substrate.

FIG. 12 is a graph showing an example of the change in the amount of image shift within the exposure width that changes due to the difference in the peripheral speed between the projection image surface and the exposure surface of the second embodiment.

13A is a diagram showing the light intensity distribution of the projection image of the L & S pattern on the mask M.

13B is a diagram showing the light intensity distribution of the projected image of the isolated line (ISO) pattern on the mask M.

Fig. 14 is a graph of the contrast value and contrast ratio of the projected image of the simulated L & S pattern under the condition of no difference in circumferential speed (before correction).

Fig. 15 is a graph showing the contrast value and contrast ratio of the projected image of the simulated L & S pattern under the condition of the difference in weekly velocity (after correction).

Figure 16 is a graph of the contrast value and contrast ratio of the projected image of the simulated isolated (ISO) pattern under the condition of no difference in circumferential speed (before correction).

Fig. 17 is a graph of the contrast value and contrast ratio of the projected image of the simulated isolated (ISO) pattern under the condition of the difference of the weekly velocity (after correction).

18 is a graph showing the relationship between the image displacement amount (offset amount) and the exposure width when the peripheral speed of the projection image surface of the mask M is changed relative to the moving speed of the exposure surface on the substrate.

FIG. 19 is a graph showing a simulation example of evaluating the optimal exposure width by using the evaluation values Q1 and Q2 obtained by using the offset and the resolution.

Fig. 20 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) of the third embodiment.

Fig. 21 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment.

FIG. 22 is an explanatory diagram that exaggerates the relationship between the movement of the projection image surface of the mask pattern and the movement of the exposure surface of the substrate.

Fig. 23 is a diagram showing the overall configuration of the exposure apparatus of the fifth embodiment.

Fig. 24 is a flowchart showing the steps when the photomask used in the exposure apparatus is replaced with another photomask.

25 is a diagram showing the relationship between the position of the field of view on the mask side of the odd-numbered first projection optical system and the position of the field of view on the mask side of the even-numbered second projection optical system.

FIG. 26 is a perspective view showing a photomask with an information storage portion storing photomask information on the surface.

Fig. 27 is a schematic diagram of an exposure condition setting table storing exposure conditions.

FIG. 28 is a diagram schematically showing the state of the illumination beam and the projection beam between masks with different diameters based on the previous FIG. 5.

Fig. 29 is a diagram showing the configuration change of the encoder reading head etc. when replacing with a mask with a different diameter.

Fig. 30 is a diagram of a correction device.

Fig. 31 is a diagram for explaining correction.

Fig. 32 is a side view showing an example in which the photomask is rotatably supported using an air bearing.

Fig. 33 is a perspective view showing an example in which the photomask is rotatably supported using an air bearing.

Fig. 34 is a diagram showing the overall configuration of the exposure apparatus of the sixth embodiment.

Fig. 35 is a diagram showing the overall configuration of the exposure apparatus of the seventh embodiment.

FIG. 36 is a perspective view showing a partial structure example of the support mechanism of the reflective cylindrical mask M in the exposure apparatus.

Fig. 37 is a flowchart showing a method of manufacturing a device.

The mode (embodiment) for implementing the present invention will be described in detail with reference to the drawings as follows. The present invention is not limited to the content described in the following embodiments. In addition, the constituent elements described below include those easily conceived by those having ordinary knowledge in the technical field to which the invention belongs, and also include substantially the same thing. In addition, the constituent elements described below can be combined as appropriate. In addition, various omissions, substitutions, or changes of constituent elements can be made without departing from the scope of the present invention. For example, in the following embodiment, although the case of manufacturing a flexible display is described as an element system, it is not limited to this. As an element, it is also possible to manufacture a wiring board formed with a wiring pattern formed of copper foil, etc., a substrate formed with a plurality of semiconductor elements (transistors, diodes, etc.).

[First Embodiment]

The substrate processing device of the first embodiment is an exposure device that applies exposure processing to a substrate, and the exposure device is incorporated in a component manufacturing system that applies various processing to the exposed substrate to manufacture components. First, the component manufacturing system will be explained.

<Component Manufacturing System>

Fig. 1 is a diagram showing the configuration of the component manufacturing system of the first embodiment. The component manufacturing system 1 shown in FIG. 1 is a production line (flexible display production line) for manufacturing flexible displays as components. As the flexible display, for example, there is an organic EL display. This component manufacturing system 1 sends out the substrate P from the supply reel FR1 that winds the flexible substrate P into a roll shape, and continuously applies various treatments to the sent substrate P, and then the processed substrate P is wound as a flexible element on a reel for recycling FR2, so-called roll to roll (Roll to Roll) method. The component manufacturing system 1 of the first embodiment shows that the substrate P as a film-like sheet is sent out from the supply roll FR1, and the substrate P sent out from the supply roll FR1 is sequentially passed through n processing devices U1. Examples of U2, U3, U4, U5, ...Un, wound up to the recycling reel FR2. First, the substrate P to be processed by the component manufacturing system 1 will be described.

For the substrate P, for example, a foil made of metal or alloy such as a resin film, stainless steel, or the like is used. The material of the resin film includes, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene ethylene copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, and polycarbonate resin. , Polystyrene resin, vinyl acetate resin, one or more than two kinds.

For the substrate P, it is better to select, for example, the coefficient of thermal expansion is significantly larger, and the amount of deformation that can be generated by heat during various processes performed on the substrate P can be substantially ignored. The coefficient of thermal expansion, for example, can be set to be smaller than the threshold of the corresponding process temperature by mixing inorganic fillers into the resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, silicon oxide, and the like. In addition, the substrate P may be a single layer of ultra-thin glass with a thickness of about 100 μm manufactured by a float method or the like, or a laminate of the above-mentioned resin film, foil, etc., bonded to this ultra-thin glass.

The substrate P configured in this manner is wound into a roll shape to become a supply roll FR1, and this supply roll FR1 is installed in the component manufacturing system 1. The component manufacturing system 1 equipped with the supply reel FR1 repeatedly performs various processes for manufacturing one component on the substrate P sent from the supply reel FR1. Therefore, the processed substrate P becomes a state where a plurality of components are connected. In other words, the substrate P sent out from the supply roll FR1 is a substrate for picking up multiple sides. In addition, the substrate P may be modified and activated by a predetermined pre-treatment in advance, or may have a fine partition structure (concave-convex structure) formed on the surface by an imprinting method for precise patterning.

The processed substrate P is wound into a roll shape to be recovered as a recovery roll FR2. The recycling roll FR2 is installed in a cutting device not shown. A cutting device equipped with a reel FR2 for recovery, divides (cuts) the processed substrate P into individual components, and then forms multiple components. The size of the substrate P, for example, the size in the width direction (the direction of the short side) is about 10 cm to 2 m, and the size in the length direction (the direction of the long strip) is more than 10 m. Of course, the size of the substrate P is not limited to the above-mentioned size.

In Figure 1, the X direction, Y direction and Z direction form an orthogonal coordinate system. The X direction is the direction in which the supply roll FR1 and the recovery roll FR2 are connected in the horizontal plane, and is the left-right direction in FIG. 1. The Y direction is the direction orthogonal to the X direction in the horizontal plane, which is the front and back direction in Figure 1. The Y direction is the axial direction of the supply roll FR1 and the recovery roll FR2. The Z direction is the vertical direction, which is the up and down direction in Figure 1.

The component manufacturing system 1 is equipped with a substrate supply device for supplying a substrate P, a processing device U1 to Un that performs various processes on the substrate P supplied by the substrate supply device 2, and a substrate P that is processed by the processing devices U1 to Un is recovered The substrate recovery device 4 and the upper control device 5 of each device of the control element manufacturing system 1.

On the substrate supply device 2, the supply roll FR1 is rotatably mounted. The substrate supply device 2 has a drive roller R1 that sends out the substrate P from the installed supply roll FR1, and an edge position controller EPC1 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller D1 rotates while sandwiching the front and back surfaces of the substrate P, and sends the substrate P from the supply roll FR1 to the conveying direction of the recovery roll FR2, thereby supplying the substrate P to the processing devices U1 to Un. At this time, the edge position controller EPC1 moves the substrate P in the width direction in such a way that the position of the substrate P in the width direction end (edge) relative to the target position is within ± tens of μm to tens of μm. To correct the position of the substrate P in the width direction.

The substrate recovery device 4 is equipped with a reel FR2 for recovery in a rotatable manner. The substrate recovery device 4 has a drive roller R2 that pulls the processed substrate P to the side of the recovery roll FR2, and an edge position controller EPC2 that adjusts the position of the substrate P in the width direction (Y direction). The substrate recovery device 4 rotates while sandwiching the front and back surfaces of the substrate P with the driving roller R2, pulls the substrate P in the conveying direction, and rotates the recovery roll FR2 to wind the substrate P accordingly. At this time, the edge position controller EPC2 has the same configuration as the edge position controller EPC1, and corrects the position of the substrate P in the width direction to avoid unevenness in the width direction end (edge) of the substrate P.

The processing device U1 is a coating device that coats the surface of the substrate P supplied from the substrate supply device 2 with a photosensitive functional liquid. As the photosensitive functional liquid, for example, a photoresist, a photosensitive silane coupling material (for example, a photosensitive liquid-philic modifying material, a photosensitive plating reduction material, etc.), a UV curable resin liquid, etc. are used. The processing device U1 is provided with a coating mechanism Gp1 and a drying mechanism Gp2 in order from the upstream side in the conveying direction of the substrate P. The coating mechanism Gp1 has a pressure roller DR1 wound around the substrate P and a coating roller DR2 facing the pressure roller DR1. The coating mechanism Gp1 clamps the substrate P with the pressure roller DR1 and the coating roller DR2 while winding the supplied substrate P around the pressure roller DR1. Next, the coating mechanism Gp1 rotates the pressing roller DR1 and the coating roller DR2 to apply the photosensitive functional liquid with the coating roller DR2 while moving the substrate P in the conveying direction. The drying mechanism Gp2 blows out drying air such as hot air or dry air to remove the solute (solvent or water) contained in the photosensitive functional liquid, and dries the substrate P coated with the photosensitive functional liquid to form photosensitivity on the substrate P Functional layer.

The processing device U2 is a heating device that heats the substrate P conveyed from the processing device U1 to a predetermined temperature (for example, several 10 to 120°C) in order to stabilize the photosensitive functional layer formed on the surface of the substrate P. The processing device U2 is provided with a heating chamber HA1 and a cooling chamber HA2 in this order from the upstream side in the conveying direction of the substrate P. The heating chamber HA1 is provided with a plurality of rollers and a plurality of air turn bars (air turn bars), and the plurality of rollers and a plurality of air turn bars constitute a transport path of the substrate P. A plurality of rollers are arranged in a manner of rolling on the back surface of the substrate P, and a plurality of air inversion rods are arranged on the surface side of the substrate P in a non-contact state. A plurality of rollers and a plurality of air inverting rods lengthen the conveyance path of the substrate P, and present a meandering conveyance path. The substrate P in the heating chamber HA1 is heated to a predetermined temperature while being conveyed along a meandering conveying path. The cooling chamber HA2 cools the substrate P to the ambient temperature in order to make the temperature of the substrate P heated in the heating chamber HA1 consistent with the ambient temperature of the subsequent process (processing device U3). The cooling chamber HA2 is provided with a plurality of rollers inside, and the plurality of rollers, like the heating chamber HA1, are arranged in a meandering conveying path to lengthen the conveying path of the substrate P. The substrate P in the cooling chamber HA2 is cooled while being transported along the meandering transport path. A drive roller R3 is provided on the downstream side in the conveying direction of the cooling chamber HA2, and the drive roller R3 rotates while clamping the substrate P passing through the cooling chamber HA2, thereby supplying the substrate P to the processing device U3.

The processing device (substrate processing device) U3 is an exposure device for projecting and exposing patterns such as a circuit or wiring for a display to a substrate (photosensitive substrate) P supplied from the processing device U2 and having a photosensitive functional layer formed on the surface. The details will be described later. The processing device U3 illuminates the reflective mask M with an illuminating beam, and projects and exposes the substrate P to the substrate P by the projection beam reflected by the illuminating beam by the mask M. The processing device U3 has a drive roller R4 that sends the substrate P supplied from the processing device U2 to the downstream side in the conveying direction, and an edge position controller EPC3 that adjusts the position of the substrate P in the width direction (Y direction). The driving roller R4 rotates while clamping the front and back surfaces of the substrate P, and sends the substrate P to the downstream side in the conveying direction, thereby supplying the substrate P to the rotating reel DR5 supported at the exposure position. The edge position controller EPC3 has the same configuration as the edge position controller EPC1, and corrects the position of the substrate P in the width direction so that the width direction of the substrate P at the exposure position becomes the target position. In addition, the processing device U3 has two sets of drive rollers DR6 and DR7 that send the substrate P to the downstream side in the conveying direction while slackening the substrate P after exposure. The two sets of drive rollers DR6 and DR7 are separated in the conveying direction of the substrate P Follow the established interval configuration. The driving roller DR6 clamps and rotates the upstream side of the conveyed substrate P, and the driving roller DR7 rotates the downstream side of the conveyed substrate P clamped, thereby supplying the substrate P to the processing device U4. At this time, since the substrate P has been given slack, it can absorb the change in the conveying speed that occurs on the downstream side of the driving roller DR7 in the conveying direction, and can cut off the influence of the change in the conveying speed on the exposure processing of the substrate P. In addition, the processing device U3 is provided with an alignment microscope AM1 for aligning the image of a part of the mask pattern of the mask M with the substrate P and detecting the alignment marks and the like formed on the substrate P in advance. , AM2.

The processing device U4 is a wet processing device that performs wet development processing and electroless plating processing on the exposed substrate P conveyed from the processing device U3. The processing device U4 has three processing tanks BT1, BT2, BT3 stepped in the vertical direction (Z direction), and a plurality of rollers for transporting the substrate P inside. The plurality of rollers are arranged such that the substrate P sequentially passes through the conveying path inside the three processing tanks BT1, BT2, and BT3. A driving roller DR8 is provided on the downstream side of the processing tank BT3 in the conveying direction. The driving roller DR8 rotates while clamping the substrate P after passing through the processing tank BT3, thereby supplying the substrate P to the processing device U5.

Although not shown, the processing device U5 is a drying device that dries the substrate P conveyed from the processing device U4. The processing device U5 removes the droplets attached to the substrate P by wet processing in the processing device U4, and adjusts the moisture content of the substrate P. The substrate P dried by the processing device U5 is transported to the processing device Un after passing through a plurality of processing devices. After being processed by the processing device Un, the substrate P is wound on the recovery reel FR2 of the substrate recovery device 4.

The upper control device 5 overall controls the substrate supply device 2, the substrate recovery device 4, and a plurality of processing devices U1 to Un. The upper control device 5 controls the substrate supply device 2 and the substrate recovery device 4 to transport the substrate P from the substrate supply device 2 to the substrate recovery device 4. In addition, the upper control device 5, in synchronization with the transportation of the substrate P, controls a plurality of processing devices U1 to Un to perform various processing on the substrate P.

<Exposure Device (Substrate Processing Device)>

Next, the configuration of the exposure apparatus (substrate processing apparatus) as the processing apparatus U3 of the first embodiment will be described with reference to FIGS. 2 to 5. Fig. 2 is a diagram showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment. FIG. 3 is a diagram showing the arrangement of the illumination area and the projection area of the exposure device shown in FIG. 2. 4 is a diagram showing the configuration of the illumination optical system and the projection optical system of the exposure device shown in FIG. 2. Fig. 5 is a diagram showing the state of the illumination beam irradiated on the mask and the projection beam emitted from the mask. FIG. 6 is a diagram schematically showing the traveling mode of the illumination beam and the projection beam of the polarization beam splitter in FIG. 4. Hereinafter, the processing device U3 is referred to as an exposure device U3.

The exposure device U3 shown in FIG. 2 is a so-called scanning exposure device, which conveys the substrate P in the conveying direction (scanning direction) while projecting and exposing the image of the mask pattern formed on the outer peripheral surface of the cylindrical mask M To the surface of the substrate P. In addition, Fig. 2 is an orthogonal coordinate system in which the X, Y, and Z directions are orthogonal, and is the same orthogonal coordinate system as in Fig. 1.

First, the photomask M used in the exposure device U3 will be described. The mask M is a reflection type mask using a metal cylindrical body, for example. The mask M is formed as a cylindrical body having an outer peripheral surface (circumferential surface) of a curvature radius Rm centered on the first axis AX1 extending in the Y direction. The circumferential surface of the mask M is a mask surface (pattern surface) P1 formed with a predetermined mask pattern (pattern). The mask surface P1 includes a high reflection part that reflects the light beam in a predetermined direction with high efficiency, and a reflection suppression part that does not reflect the light beam in the predetermined direction or reflects with low efficiency. The mask pattern is formed with a high reflection part and a reflection suppression part. Therefore, the reflection suppression part may absorb light, may transmit light, or may reflect (e.g., scatter) outside a predetermined direction. The mask M here can be made of a material that absorbs light or a material that transmits light. The exposure device U3 can use a photomask made of a cylindrical body of metal such as aluminum or SUS as the photomask M having the above configuration. Therefore, the exposure device U3 can use an inexpensive photomask for exposure.

In addition, the mask M may be formed with all or a part of the panel pattern corresponding to one display element, or may be formed with the panel pattern corresponding to a plurality of display elements. In addition, the mask M may have a plurality of panel patterns formed repeatedly in the circumferential direction around the first axis AX1, or a small panel pattern may be formed repeatedly in a direction parallel to the first axis AX1. In addition, the mask M may be a pattern for a panel on which the first display element is formed and a pattern for a second display element that is different in size from the first display element. In addition, the mask M is not limited to a cylindrical shape as long as it has a circumferential surface with a radius of curvature Rm centered on the first axis AX1. For example, the mask M may be an arc-shaped plate with a circumferential surface. In addition, the mask M may have a thin plate shape, or the thin plate-shaped mask M may be curved to have a circumferential surface.

Next, the exposure apparatus U3 shown in FIG. 2 will be explained. Exposure device U3, in addition to the above-mentioned drive rollers DR4, DR6, DR7, rotating reel DR5, edge position controller EPC3, and alignment microscopes AM1, AM2, also has a mask holding mechanism 11, a substrate support mechanism 12, and an illumination optical system IL, the projection optical system PL, and the lower control device 16. The exposure device U3 irradiates the pattern surface P1 of the mask M supported by the mask holding mechanism 11 by passing the illumination light emitted from the light source device 13 through a part of the illumination optical system IL and the projection optical system PL, The projection light beam (imaging light) reflected by the pattern surface P1 of the cover M is projected to the substrate P supported by the substrate supporting mechanism 12 through the projection optical system PL.

The lower control device 16 controls each part of the exposure device U3 and causes each part to perform processing. The lower control device 16 may be a part or all of the upper control device 5 of the component manufacturing system 1. In addition, the lower control device 16 may be another device that is controlled by the upper control device 5 and is different from the upper control device 5. The lower control device 16 includes, for example, a computer.

The mask holding mechanism 11 has a cylindrical drum (also referred to as a mask holding drum) 21 that holds the mask M, and a first drive unit 22 that rotates the cylindrical drum 21. The cylindrical drum 21 holds the mask M so that the first axis AX1 of the mask M is the center of rotation. The first driving unit 22 is connected to the lower control device 16 and rotates the cylindrical drum 21 with the first axis AX1 as the rotation center.

In addition, although the cylindrical drum 21 of the mask holding mechanism 11 directly forms a mask pattern with a high reflection part and a low reflection part on the outer peripheral surface, it is not limited to this structure. The cylindrical drum 21 as the mask holding mechanism 11 may also wind and hold the thin-plate-shaped reflection type mask M along its outer peripheral surface. In addition, as the cylindrical drum 21 of the mask holding mechanism 11, a plate-shaped reflection type mask M previously curved in an arc shape with a radius Rm may be detachably held on the outer peripheral surface of the cylindrical drum 21.

The substrate support mechanism 12 has a substrate support cylinder 25 (rotating cylinder DR5 in FIG. 1) that supports the substrate P, a second drive unit 26 that rotates the substrate support cylinder 25, and a pair of air turn bars ATB1, ATB2, and a pair of guide rollers 27, 28. The substrate support cylinder 25 is formed in a cylindrical shape having an outer peripheral surface (circumferential surface) with a curvature radius of Rp centered on the second axis AX2 extending in the Y direction. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and a plane passing through the first axis AX1 and the second axis AX2 is the center plane CL. A part of the circumferential surface of the substrate supporting cylinder 25 is a supporting surface P2 for supporting the substrate P. That is, the substrate support cylinder 25 is supported by bending the substrate P into a cylindrical surface shape by winding the substrate P on its support surface P2. The second drive unit 26 is connected to the lower control device 16 and rotates the substrate support cylinder 25 with the second axis AX2 as the rotation center. The pair of air inversion rods ATB1 and ATB2 and the pair of guide rollers 27 and 28 are provided on the upstream and downstream sides of the substrate P in the conveying direction with the substrate supporting cylinder 25 interposed therebetween. The guide roller 27 guides the substrate P transported from the driving roller DR4 to the substrate support cylinder 25 through the air inversion rod ATB1, and the guide roller 28 guides the substrate P transported from the air inversion rod ATB2 through the substrate support cylinder 25 Guide to drive roller DR6.

The substrate support mechanism 12 rotates the substrate support cylinder 25 by the second drive unit 26, so that the substrate P introduced into the substrate support cylinder 25 is supported by the support surface P2 of the substrate support cylinder 25 and grows at a predetermined speed. Convey in the strip direction (X direction).

At this time, the lower control device 16 connected to the first driving portion 22 and the second driving portion 26 causes the cylindrical roller 21 and the substrate support cylinder 25 to rotate synchronously at a predetermined rotation speed ratio, thereby forming a surface of the mask M The image of the mask pattern on the mask surface P1 is continuously and repeatedly projected and exposed on the surface of the substrate P (the surface curved along the circumferential surface) wound on the supporting surface P2 of the substrate supporting cylinder 25. The exposure device U3, the first drive unit 22, and the second drive unit 26 are the moving mechanism of this embodiment.

The light source device 13 emits an illumination light beam EL1 that illuminates the mask M. The light source device 13 has a light source 31 and a light guide member 32. The light source 31 is a light source that emits light of a predetermined wavelength. The light source 31 is a light source such as a mercury lamp, a laser diode, or a light emitting diode (LED). The illumination light emitted by the light source 31 is, for example, the bright line (g-line, h-line, i-line) emitted from the light source, KrF excimer laser light (wavelength 248nm) and other far ultraviolet light (DUV light), ArF excimer laser light (Wavelength 193nm) and so on. Here, the light source 31 preferably emits an illumination light beam EL1 having a shorter wavelength than the i-line (wavelength of 365 nm). As this illumination beam EL1, laser light (wavelength of 365nm) emitted from YAG laser (third harmonic laser), laser light (266nm of 266nm) emitted from YAG laser (fourth harmonic laser) can be used. Wavelength), or laser light emitted from KrF excimer laser (wavelength of 248nm), etc.

The light guide member 32 guides the illumination light beam EL1 emitted from the light source 31 to the illumination optical system IL. The light guide member 32 is composed of a relay module using an optical fiber or a mirror. In addition, when the light guide member 32 is provided with a plurality of illumination optical systems IL, the illumination light beam EL1 from the light source 31 is divided into a plurality of pieces, and the plurality of illumination light beams EL1 are guided to the plurality of illumination optical systems IL. In the light guide member 32 of this embodiment, the illumination light beam EL1 emitted from the light source 31 becomes light in a predetermined polarization state and enters the polarization beam splitter PBS. The polarization beam splitter PBS is provided between the mask M and the projection optical system PL in order to perform epi-illumination on the mask M, reflects the linearly polarized light beam as S-polarized light, and transmits the linearly polarized light beam as P-polarized light. Therefore, the light source device 13 emits the illumination light beam EL1 that enters the polarization beam splitter PBS into linearly polarized (S-polarized) illumination light beam EL1. The light source device 13 emits a polarized laser with the same wavelength and phase to the polarizing beam splitter PBS. For example, when the light beam emitted from the light source 31 is polarized light, the light source device 13 uses a polarization plane preservation fiber as the light guide member 32 to maintain the polarization state of the laser light output from the light source device 13 to guide the light. In addition, for example, an optical fiber may guide the light beam output from the light source 31, and a polarizing plate may be used to polarize the light output from the optical fiber. That is, when the light source device 13 guides the randomly polarized light beam, the polarizing plate can also polarize the randomly polarized light beam. In addition, the light source device 13 may also guide the light beam output from the light source 31 by a relay optical system using a lens or the like.

Here, as shown in FIG. 3, the exposure apparatus U3 of the first embodiment assumes a so-called multi-lens exposure apparatus. In addition, FIG. 3 shows a plan view of the illumination area IR on the mask M held by the cylindrical roller 21 viewed from the -Z side (the left side view in FIG. 3), and the substrate support cylinder 25 viewed from the +Z side The top view of the projection area PA on the supported substrate P (the right side view in FIG. 3). The symbol Xs in FIG. 3 represents the movement direction (rotation direction) of the cylindrical roller 21 and the substrate support cylinder 25. The exposure device U3 of the multi-lens method is attached to the plurality of (for example, 6 in the first embodiment) illumination areas IR1 to IR6 on the mask M to illuminate the illumination light beam EL1, and each illumination light beam EL1 is placed in each illumination area IR1 The plurality of projection beams EL2 reflected by IR6 are projected and exposed to a plurality of projection areas PA1 to PA6 on the substrate P (for example, 6 in the first embodiment).

First, a plurality of illumination areas IR1 to IR6 illuminated by the illumination optical system IL will be described. As shown in Fig. 3, a plurality of illumination areas IR1 to IR6 are arranged on the mask M on the upstream side in the rotation direction with the center plane CL interposed between the first illumination area IR1, the third illumination area IR3, and the fifth illumination area IR5. The second illumination area IR2, the fourth illumination area IR4, and the sixth illumination area IR6 are arranged on the mask M on the downstream side in the direction. Each of the illumination areas IR1 to IR6 is an area having a slender trapezoid with parallel short sides and long sides extending in the axial direction (Y direction) of the mask M. At this time, each illumination area IR1~IR6 of the trapezoid forms an area whose short side is on the side of the central plane CL and its long side is on the outside. The first illumination area IR1, the third illumination area IR3, and the fifth illumination area IR5 are arranged at predetermined intervals in the axial direction. In addition, the second illumination area IR2, the fourth illumination area IR4, and the sixth illumination area IR6 are also arranged at a predetermined interval in the axial direction. At this time, the second illumination area IR2 is arranged between the first illumination area IR1 and the third illumination area IR3 in the axial direction. Similarly, the third illumination area IR3 is arranged between the second illumination area IR2 and the fourth illumination area IR4 in the axial direction. The fourth illumination area IR4 is arranged between the third illumination area IR3 and the fifth illumination area IR5 in the axial direction. The fifth illumination area IR5 is arranged between the fourth illumination area IR4 and the sixth illumination area IR6 in the axial direction. The illumination areas IR1 to IR6, viewed from the circumferential direction (X direction) of the mask M, are arranged in such a way that the triangles of the hypotenuses of adjacent trapezoidal illumination areas overlap. In addition, in the first embodiment, although the illumination areas IR1 to IR6 are formed as trapezoidal areas, they may be formed as rectangular areas.

In addition, the mask M has a pattern formation area A3 in which a mask pattern is formed, and a pattern non-formation area A4 in which a mask pattern is not formed. The pattern non-formation area A4 is a non-reflection area that absorbs the illumination light beam EL1, and is arranged to surround the pattern formation area A3 in a frame shape. The first to sixth illumination areas IR1 to IR6 are arranged to cover the full width of the pattern formation area A3 in the Y direction.

The illumination optical system IL is provided with a plurality of illumination regions IR1 to IR6 (in the first embodiment, for example, there are 6). The illumination light beam EL1 from the light source device 13 is injected into the plurality of illumination optical systems (divided and covered optical systems) IL1 to IL6, respectively. The illumination optical systems IL1 to IL6 respectively guide the illumination light beam EL1 incident from the light source device 13 to the illumination areas IR1 to IR6. In other words, the first illumination optical system IL1 guides the illumination light beam EL1 to the first illumination area IR1, and similarly, the second to sixth illumination optical systems IL2 to IL6 guide the illumination light beam EL1 to the second to sixth illumination areas IR2. ~IR6. A plurality of illumination optical systems IL1 to IL6 are arranged on the side where the first, third, and fifth illumination regions IR1, IR3, IR5 are arranged (the left side of Fig. 2) across the center plane CL, and the first illumination optical system IL1 and the third are arranged The illumination optical system IL3 and the fifth illumination optical system IL5. The first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5 are arranged at a predetermined interval in the Y direction. In addition, a plurality of illumination optical systems IL1 to IL6 are arranged on the side where the second, fourth, and sixth illumination regions IR2, IR4, and IR6 are arranged across the center plane CL (the right side of Fig. 2), and the second illumination optical system IL2 is arranged. The fourth illumination optical system IL4 and the sixth illumination optical system IL6. The second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are arranged at a predetermined interval in the Y direction. At this time, the second illumination optical system IL2 is arranged between the first illumination optical system IL1 and the third illumination optical system IL3 in the axial direction. Similarly, the third illumination optical system IL3, the fourth illumination optical system IL4, and the fifth illumination optical system IL5 are arranged in the axial direction between the second illumination optical system IL2 and the fourth illumination optical system IL4, and the third illumination optical system Between IL3 and the fifth illumination optical system IL5, and between the fourth illumination optical system IL4 and the sixth illumination optical system IL6. In addition, the first illumination optical system IL1, the third illumination optical system IL3, and the fifth illumination optical system IL5, the second illumination optical system IL2, the fourth illumination optical system IL4, and the sixth illumination optical system IL6 are symmetrical when viewed from the Y direction. Configuration.

Next, each illumination optical system IL1 to IL6 will be described with reference to FIG. 4. In addition, since each of the illumination optical systems IL1 to IL6 has the same configuration, the first illumination optical system IL1 (hereinafter, simply referred to as the illumination optical system IL) will be described as an example.

In order to illuminate the illumination area IR (first illumination area IR1) with uniform illuminance, the illumination optical system IL is adapted to illuminate the illumination area IR on the mask M with the illumination beam EL1 Koehler from the light source device 13. In addition, the illumination optical system IL is an epi-illumination system using a polarizing beam splitter PBS. The illumination optical system IL has an illumination optical module ILM, a polarization beam splitter PBS, and a quarter-wave plate 41 in order from the incident side of the illumination light beam EL1 from the light source device 13.

As shown in Fig. 4, the illumination optical module ILM includes a collimator lens 51, a fly-eye lens 52, a plurality of condenser lenses 53, a cylindrical lens 54, and an illumination field diaphragm in order from the incident side of the illumination light beam EL1. 55. A plurality of relay lenses 56 are arranged on the first optical axis BX1.

The collimator lens 51 injects the light emitted from the light guide member 32 and irradiates the entire surface of the fly-eye lens 52 on the incident side.

The fly-eye lens 52 is provided on the exit side of the collimator lens 51. The center of the emission side surface of the fly-eye lens 52 is arranged on the first optical axis BX1. The fly-eye lens 52 divides the illumination light beam EL1 from the collimator lens 51 into a plurality of point light source images to generate a surface light source image. The illumination light beam EL1 is generated from this surface light source image. At this time, the exit side surface of the fly-eye lens 52 that generates the point light source image is arranged with the first concave mirror by various lenses from the fly-eye lens 52 through the illumination field diaphragm 55 to the first concave mirror 72 of the projection optical system PL described later The pupil plane where the reflecting plane of 72 is located is optically conjugate.

The condenser lens 53 is provided on the exit side of the fly-eye lens 52. The optical axis of the condenser lens 53 is arranged on the first optical axis BX1. The condenser lens 53 superimposes the light from each of the plurality of point light source images formed on the exit side of the fly eye lens 52 on the illumination field diaphragm 55 and irradiates the illumination field diaphragm 55 with a uniform illuminance distribution. The illumination field stop 55 has a trapezoidal or rectangular rectangular opening similar to the illumination region IR shown in FIG. 3, and the center of the opening is arranged on the first optical axis BX1. By means of the relay lens 56, the polarizing beam splitter PBS, and the quarter-wave plate 41 in the optical path from the illumination field diaphragm 55 to the mask M, the opening of the illumination field diaphragm 55 is arranged in line with the mask M The illumination area IR is optically conjugated. The relay lens 56 causes the illumination light beam EL1 transmitted through the opening of the illumination field diaphragm 55 to enter the polarizing beam splitter PBS. A cylindrical lens 54 is provided on the exit side of the condenser lens 53 and adjacent to the illumination field diaphragm 55. The cylindrical lens 54 is a plano-convex cylindrical lens with a plane on the incident side and a convex on the outgoing side. The optical axis of the cylindrical lens 54 is arranged on the first optical axis BX1. The cylindrical lens 54 converges the principal rays of the illumination light beam EL1 illuminating the illumination area IR on the mask M in the XZ plane and becomes parallel in the Y direction.

The polarizing beam splitter PBS is arranged between the illumination optical module ILM and the center plane CL. The polarization beam splitter PBS reflects the linearly polarized light beam as S-polarized light on the wavefront splitting surface, and transmits the linearly polarized light beam as P-polarized light. Here, if the illumination light beam EL1 incident on the polarizing beam splitter PBS is made to be linearly polarized light of S polarization, the illumination light beam EL1 is reflected on the wave surface division surface of the polarization beam splitter PBS, and transmitted through the 1/4 wave plate 41 to become circularly polarized light. And illuminate the illumination area IR on the mask M. The projection light beam EL2 reflected by the illumination area IR on the mask M is converted from circularly polarized light to linear P-polarized light by passing through the quarter-wave plate 41 again, and is transmitted through the wave surface dividing surface of the polarizing beam splitter PBS to be projected Optical system PL. The polarizing beam splitter PBS preferably reflects most of the illumination light beam EL1 incident on the wavefront splitting surface and transmits most of the projection light beam EL2. Although the polarization separation characteristic of the wavefront splitting surface of the polarizing beam splitter PBS is expressed by the extinction ratio, the extinction ratio will also change due to the incident angle of the light ray on the wavefront splitting surface, so the characteristics of the wavefront splitting surface are also Considering the NA (numerical aperture) of the illumination light beam EL1 or the projection light beam EL2, the design so that the effect on the imaging performance in practice will not be a problem.

5 is an exaggerated display of the state of the illumination light beam EL1 irradiated on the illumination area IR on the mask M and the projection light beam EL2 reflected in the illumination area IR in the XZ plane (plane perpendicular to the first axis AX1). As shown in FIG. 5, the above-mentioned illumination optical system IL irradiates the illumination area IR of the mask M so that the chief ray of the projection beam EL2 reflected in the illumination area IR of the mask M becomes telecentric (parallel system) The chief ray of the illumination beam EL1 intentionally becomes a non-telecentric state in the XZ plane (a plane perpendicular to the axis AX1), and becomes a telecentric state in the YZ plane (parallel to the center plane CL). Such characteristics of the illumination light beam EL1 are given by the cylindrical lens 54 shown in FIG. 4. Specifically, when the point Q1 passing through the center of the illumination area IR on the mask surface P1 in the circumferential direction is set, the intersection point Q2 of the line of the first axis AX1 and the circle 1/2 of the radius Rm of the mask surface P1 is set , The curvature of the convex cylindrical lens surface of the cylindrical lens 54 is set so that the principal rays of the illumination beam EL1 passing through the illumination area IR are directed to the intersection Q2 on the XZ plane. In this way, the principal rays of the projection light beam EL2 reflected in the illumination area IR become parallel (telecentric) to the straight line passing through the first axis AX1, the point Q1, and the intersection Q2 in the XZ plane.

Next, a plurality of projection areas PA1 to PA6 projected and exposed by the projection optical system PL will be described. As shown in FIG. 3, the plurality of projection areas PA1 to PA6 on the substrate P are arranged corresponding to the plurality of illumination areas IR1 to IR6 on the mask M. In other words, the plurality of projection areas PA1 to PA6 on the substrate P are arranged on the substrate P on the upstream side in the conveying direction. The first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged on the downstream side in the conveying direction. The second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are arranged on the substrate P. Each of the projection areas PA1 to PA6 has an elongated trapezoidal area extending in the short side and the long side in the width direction (Y direction) of the substrate P. At this time, each of the projection areas PA1 to PA6 of the trapezoid is an area whose short side is on the side of the center plane CL and its long side is on the outside. The first projection area PA1, the third projection area PA3, and the fifth projection area PA5 are arranged at predetermined intervals in the width direction. In addition, the second projection area PA2, the fourth projection area PA4, and the sixth projection area PA6 are also arranged at predetermined intervals in the width direction. At this time, the second projection area PA2 is arranged between the first projection area PA1 and the third projection area PA3 in the axial direction. Similarly, the third projection area PA3 is arranged between the second projection area PA2 and the fourth projection area PA4 in the axial direction. The fourth projection area PA4 is arranged between the third projection area PA3 and the fifth projection area PA5 in the axial direction. The fifth projection area PA5 is arranged between the fourth projection area PA4 and the sixth projection area PA6 in the axial direction. The projection areas PA1~PA6 are the same as the illumination areas IR1~IR6. Seen from the conveying direction of the substrate P, they are overlapped by the triangles of the hypotenuses of the trapezoidal projection areas PA adjacent in the Y direction. Configuration. At this time, the projection area PA has substantially the same shape as the exposure amount in the overlapping area of the adjacent projection area PA and the non-overlapping area. The first to sixth projection areas PA1 to PA6 are configured to cover the full width of the exposure area A7 exposed on the substrate P in the Y direction.

Here, in Figure 2, when viewed in the XZ plane, the perimeter from the center point of the illumination area IR1 (and IR3, IR5) on the mask M to the center point of the illumination area IR2 (and IR4, IR6) is set as The circumference from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the supporting surface P2 to the center point of the second projection area PA2 (and PA4, PA6) is substantially equal.

The projection optical system PL is provided in plural (for example, six in the first embodiment) corresponding to the plural projection areas PA1 to PA6. In a plurality of projection optical systems (divided projection optical systems) PL1~PL6, a plurality of projection light beams EL2 reflected from a plurality of illumination areas IR1~IR6 are respectively incident. Each projection optical system PL1~PL6 guides each projection light beam EL2 reflected by the mask M to each projection area PA1~PA6, respectively. In other words, the first projection optical system PL1 guides the projection light beam EL2 from the first illumination area IR1 to the first projection area PA1. Similarly, the second to sixth projection optical systems PL2 to PL6 will come from the second to sixth Each projection light beam EL2 of the illumination area IR2~IR6 is guided to the second to sixth projection areas PA2~PA6. The plurality of projection optical systems PL1 to PL6 are arranged with the center plane CL interposed between the first, third, and fifth projection areas PA1, PA3, PA5 (left side in Fig. 2), and the first projection optical system PL1 and the third Projection optical system PL3 and fifth projection optical system PL5. The first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 are arranged at a predetermined interval in the Y direction. In addition, the plurality of projection optical systems PL1 to PL6 are interposed with the center plane CL, and the second projection optical system PL2 is arranged on the side where the second, fourth, and sixth projection areas PA2, PA4, and PA6 are arranged (the right side of FIG. 2). The fourth projection optical system PL4 and the sixth projection optical system PL6. The second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are arranged at a predetermined interval in the Y direction. At this time, the second projection optical system PL2 is arranged between the first projection optical system PL1 and the third projection optical system PL3 in the axial direction. Similarly, the third projection optical system PL3, the fourth projection optical system PL4, and the fifth projection optical system PL5 are arranged in the axial direction between the second projection optical system PL2 and the fourth projection optical system PL4, and the third projection optical system Between PL3 and fifth projection optical system PL5, and between fourth projection optical system PL4 and sixth projection optical system PL6. In addition, the first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5, the second projection optical system PL2, the fourth projection optical system PL4, and the sixth projection optical system PL6 are symmetrical when viewed from the Y direction. Configuration.

Further, each projection optical system PL1 to PL6 will be described with reference to FIG. 4. In addition, since each of the projection optical systems PL1 to PL6 has the same configuration, the first projection optical system PL1 (hereinafter, simply referred to as the projection optical system PL) will be described as an example.

The projection optical system PL projects the image of the mask pattern in the illumination area IR (first illumination area IR1) on the mask M onto the projection area PA on the substrate P. The projection optical system PL includes the 1/4 wavelength plate 41, the polarization beam splitter PBS, and the projection optical module PLM in this order from the incident side of the projection light beam EL2 from the mask M.

The quarter-wave plate 41 and the polarization beam splitter PBS system are used together with the illumination optical system IL. In other words, the illumination optical system IL and the projection optical system PL share a quarter-wave plate 41 and a polarization beam splitter PBS.

As shown in FIG. 7, the projection light beam EL2 reflected in the illumination area IR (refer to FIG. 3) becomes a telecentric light beam in which the principal rays are parallel to each other, and enters the projection optical system PL shown in FIG. The circularly polarized projection light beam EL2 reflected in the illumination area IR is converted from the circularly polarized light to the linearly polarized light (P polarized light) by the quarter wave plate 41, and then enters the polarizing beam splitter PBS. The projection light beam EL2 entering the polarizing beam splitter PBS enters the projection optical module PLM shown in FIG. 4 after penetrating the polarizing beam splitter PBS.

As an example, the polarizing beam splitter PBS is one in which two triangular ridges (made of quartz) are attached in the XZ plane, or the whole is formed into a rectangular shape by being held in contact with an optical contact. On the bonding surface, a multilayer film containing hafnium oxide or the like is formed for efficient polarization separation. Furthermore, the surface of the polarization beam splitter PBS where the projection light beam EL2 from the mask M is incident and the surface where the projection light beam EL2 is projected toward the first reflection surface P3 of the first deflection member 70 of the projection optical system PL are set as It is perpendicular to the chief ray of the projection beam EL2. Furthermore, the plane of the polarization beam splitter PBS into which the illumination light beam EL1 is incident is set to be perpendicular to the first optical axis BX1 (refer to FIG. 4) of the illumination optical system IL. In addition, if there is a concern that the resistance to ultraviolet rays or laser light will be affected by the use of an adhesive, the bonding surface of the polarizing beam splitter PBS is suitable for bonding optical contacts that do not use an adhesive.

The projection light beam EL2 reflected in the illumination area IR becomes a telecentric light beam and enters the projection optical system PL. The circularly polarized projection light beam EL2 reflected in the illumination area IR is converted from the circularly polarized light to the linearly polarized light (P polarized light) by the quarter wave plate 41, and then enters the polarizing beam splitter PBS. The projection light beam EL2 that enters the polarizing beam splitter PBS enters the projection optical module PLM after passing through the polarizing beam splitter PBS.

The projection optical module PLM and the illumination optical module ILM are arranged correspondingly. That is, the projection optical module PLM of the first projection optical system PL1 projects the image of the mask pattern of the first illumination region IR1 illuminated by the illumination optical module ILM of the first illumination optical system IL1 on the substrate P The first projection area PA1. Similarly, the projection optical modules PLM of the second to sixth projection optical systems PL2 to PL6 will be illuminated by the second to sixth illumination areas IR2 of the second to sixth illumination optical systems IL2 to IL6. The image of the mask pattern of ~IR6 is projected on the second to sixth projection areas PA2 to PA6 on the substrate P.

As shown in FIG. 4, the projection optical module PLM is provided with a first optical system 61 that forms an image of the mask pattern of the illumination area IR on the intermediate image plane P7, and at least a part of the intermediate image formed by the first optical system 61 The second optical system 62 that reimages the projection area PA of the substrate P, and the projection field diaphragm 63 that is arranged on the intermediate image plane P7 where the intermediate image is formed. In addition, the projection optical module PLM includes a focus correction optical member 64, an image shift optical member 65, an optical member 66 for magnification correction, a rotation correction mechanism 67, and a polarization adjustment mechanism 68.

The first optical system 61 and the second optical system 62 are, for example, a telecentric catadioptric optical system in which a Dyson system is deformed. The optical axis of the first optical system 61 (hereinafter referred to as the second optical axis BX2) is substantially perpendicular to the center plane CL. The first optical system 61 includes a first deflection member 70, a first lens group 71 and a first concave mirror 72. The first deflecting member 70 is a triangular shape having a first reflecting surface P3 and a second reflecting surface P4. The first reflection surface P3 reflects the projection light beam EL2 from the polarization beam splitter PBS, and causes the reflected projection light beam EL2 to pass through the first lens group 71 and enter the first concave mirror 72. The second reflection surface P4 is a surface that allows the projection light beam EL2 reflected by the first concave mirror 72 to pass through the first lens group 71 and reflects the incident projection light beam EL2 toward the projection field diaphragm 63. The first lens group 71 includes various lenses, and the optical axes of the various lenses are arranged on the second optical axis BX2. The first concave mirror 72 is arranged on the pupil surface of the first optical system 61 and is set in an optically conjugate relationship with the plurality of point light source images generated by the fly-eye lens 52.

The projection light beam EL2 from the polarization beam splitter PBS is reflected on the first reflection surface P3 of the first deflection member 70, passes through the field of view of the upper half of the first lens group 71, and enters the first concave mirror 72. The projection light beam EL2 incident on the first concave mirror 72 is reflected by the first concave mirror 72, passes through the field of view of the lower half of the first lens group 71, and enters the second reflecting surface P4 of the first deflecting member 70. The projection light beam EL2 incident on the second reflection surface P4 is reflected on the second reflection surface P4, passes through the focus correction optical member 64 and the image shift optical member 65, and enters the projection field diaphragm 63.

The projection field diaphragm 63 has an opening that defines the shape of the projection area PA. That is, the opening shape of the projection field diaphragm 63 defines the shape of the projection area PA. Therefore, when the opening shape of the illumination field diaphragm 55 in the illumination optical system IL is set to a trapezoid similar to the substantial shape of the projection area PA, the projection field diaphragm 63 can be omitted.

The second optical system 62 has the same configuration as the first optical system 61, and is provided symmetrically with the first optical system 61 across the intermediate image plane P7. The optical axis of the second optical system 62 (hereinafter referred to as the third optical axis BX3) is substantially orthogonal to the center plane CL, and is parallel to the second optical axis BX2. The second optical system 62 includes a second deflection member 80, a second lens group 81 and a second concave mirror 82. The second deflection member 80 has a third reflection surface P5 and a fourth reflection surface P6. The third reflection surface P5 is a surface that reflects the projection light beam EL2 from the projection field diaphragm 63, and causes the reflected projection light beam EL2 to pass through the second lens group 81 and enter the second concave mirror 82. The fourth reflecting surface P6 is a surface that allows the projection light beam EL2 reflected by the second concave mirror 72 to pass through the second lens group 81 and reflects the incident projection light beam EL2 toward the projection area PA. The second lens group 81 includes various lenses, and the optical axes of the various lenses are arranged on the third optical axis BX3. The second concave mirror 82 is arranged on the pupil surface of the second optical system 62 and is set in an optically conjugate relationship with the plurality of point light source images formed on the first concave mirror 72.

The projection light beam EL2 from the projection field stop 63 is reflected on the third reflection surface P5 of the second deflecting member 80, passes through the field of view of the upper half of the second lens group 81, and enters the second concave mirror 82. The projection light beam EL2 incident on the second concave mirror 82 is reflected by the second concave mirror 82, passes through the field of view of the lower half of the second lens group 81, and enters the fourth reflection surface P6 of the second deflecting member 80. The projection light beam EL2 incident on the fourth reflection surface P6 is reflected on the fourth reflection surface P6, and enters the projection area PA through the optical member 66 for magnification correction. Thereby, the image of the mask pattern in the illumination area IR is projected on the projection area PA at the same magnification (×1).

The focus correction optical member 64 is arranged between the first deflection member 70 and the projection field diaphragm 63. The focus correction optical member 64 adjusts the focus state of the mask pattern image projected on the substrate P. The focus correction optical member 64 is, for example, by inverting two wedge-shaped ridges (inverted in the X direction in FIG. 4) and overlapping them into a transparent parallel flat plate as a whole. If this pair of slabs slide down to the slope direction without changing the distance between the facing surfaces, the thickness of the parallel plates can be changed. Accordingly, the effective optical path length of the first optical system 61 can be finely adjusted, and the focus state of the mask pattern image formed on the intermediate image plane P7 and the projection area PA can be finely adjusted.

The image shift optical member 65 is arranged between the first deflecting member 70 and the projection field diaphragm 63. The optical member 65 for image shift can adjust the image of the mask pattern projected on the substrate P to move within the image plane. The image shift optical member 65 is composed of transparent parallel plate glass that can be tilted in the XZ plane in FIG. 4 and a transparent parallel plate glass that can be tilted in the YZ plane in FIG. 4. By adjusting the inclination of the two parallel plate glasses, the image of the mask pattern formed on the intermediate image plane P7 and the projection area PA can be slightly shifted in the X direction and the Y direction.

The optical member 66 for magnification correction is arranged between the second deflection member 70 and the substrate P. The optical member 66 for magnification correction is composed of, for example, three concave lenses, convex lenses, and concave lenses arranged coaxially at a predetermined interval, the front and rear concave lenses are fixed, and the convex lens in between is movable in the direction of the optical axis (primary ray). Accordingly, the image of the mask pattern formed in the projection area PA can be slightly enlarged or reduced isotropically while maintaining the telecentric imaging state. In addition, the optical axis of the three lens groups constituting the optical member 66 for magnification correction is inclined in the XZ plane so as to be parallel to the chief ray of the projection light beam EL2.

The rotation correction mechanism 67 is, for example, one that slightly rotates the first deflection member 70 around an axis parallel (or perpendicular) to the Z axis by an actuator (not shown). The rotation correcting mechanism 67 rotates the first deflection member 70 to slightly rotate the image of the mask pattern formed on the intermediate image plane P7 in the intermediate image plane P7.

The polarization adjustment mechanism 68 adjusts the polarization direction by rotating the quarter-wave plate 41 about an axis orthogonal to the plate surface by an actuator (not shown), for example. The polarization adjustment mechanism 68 can adjust the illuminance of the projection light beam EL2 projected on the projection area PA by rotating the quarter-wave plate 41.

In the projection optical system PL constructed in this way, the projection light beam EL2 from the mask M is emitted from the illumination area IR in a telecentric state (the state where the principal rays are parallel to each other), and passes through the quarter-wave plate 41 and the polarization beam splitter The PBS is incident on the first optical system 61. The projection light beam EL2 entering the first optical system 61 is reflected on the first reflection surface (plane mirror) P3 of the first deflecting member 70 of the first optical system 61, and is reflected by the first concave mirror 72 through the first lens group 71. The projection light beam EL2 reflected by the first concave mirror 72 passes through the first lens group 71 again, is reflected on the second reflection surface (plane mirror) P4 of the first deflection member 70, and passes through the focus correction optical member 64 and the image shift optical member 65 And it enters the projection field diaphragm 63. The projection light beam EL2 passing through the projection field diaphragm 63 is reflected by the third reflection surface (plane mirror) P5 of the second deflection member 80 of the second optical system 62, and is reflected by the second concave mirror 82 by the second lens group 81. The projection light beam EL2 reflected by the second concave mirror 82 passes through the second lens group 81 again, is reflected on the fourth reflection surface (plane mirror) P6 of the second deflection member 80, and enters the magnification correction optical member 66. The projection light beam EL2 emitted from the optical member 66 for magnification correction enters the projection area PA on the substrate P, and the image of the mask pattern appearing in the illumination area IR is projected on the projection area PA at the same magnification (×1).

In this embodiment, the second reflecting surface (plane mirror) P4 of the first deflection member 70 and the third reflecting surface (plane mirror) P5 of the second deflection member 80 are inclined with respect to the center plane CL (or optical axis BX2, BX3) 45°, but the first reflecting surface (plane mirror) P3 of the first deflecting member 70 and the fourth reflecting surface (plane mirror) P6 of the second deflecting member 80 are set relative to the central plane CL (or optical axis BX2, BX3 ) Is an angle other than 45°. The angle α° (absolute value) of the first reflecting surface P3 of the first deflecting member 70 relative to the central plane CL (or the optical axis BX2) is set to pass through the point Q1, the intersection point Q2, and the first axis AX1 in FIG. When the angle formed by the straight line and the center plane CL is θ°, the relationship is defined as α°=45°+θ°/2. Similarly, the angle β° (absolute value) of the fourth reflecting surface P6 of the second deflecting member 80 relative to the central plane CL (or the optical axis BX2) is set to pass in the circumferential direction of the outer peripheral surface of the substrate support cylinder 25 When the angle between the chief ray of the projection beam EL2 at the center point in the projection area PA and the center plane CL in the ZX plane is ε°, the relationship is set to be β°=45°+ε°/2. In addition, the angle ε may vary depending on the size of the structure on the side of the mask M and the side of the substrate P of the projection optical system PL, the size of the polarizing beam splitter PBS, etc., and the circumferential size of the illumination area IR or the projection area PA. But here it is set to about 10°~30°.

<Relationship between the projection image surface of the mask pattern and the exposure surface of the substrate>

FIG. 7 is an explanatory diagram that exaggerates the relationship between the projected image surface Sm of the cylindrical pattern surface P1 of the mask M and the exposure surface Sp of the substrate P supported in a cylindrical shape. Next, referring to FIG. 7, the relationship between the projection image surface of the photomask and the exposure surface of the substrate in the exposure apparatus U3 of the first embodiment will be described.

The exposure device U3 uses the projection optical system PL to image the projection light beam EL2 to form the projection image surface Sm of the pattern of the mask M. The projection image surface Sm is the position where the pattern of the mask M is imaged, and is the position of the best focus. In addition, instead of the projection image surface Sm, a surface other than the best focus position may be used. For example, it may be a surface formed at a position separated by a certain distance from the best focus. Here, the mask M is arranged on the curved surface of the radius of curvature Rm (curved in the ZX plane) as described above. Since the projection magnification of the projection optical system PL is set to the same magnification, the projection image surface Sm can also be in the circumferential direction of the projection area PA, that is, the range of the exposure width 2A, which can be regarded as extending approximately in the center of the Y direction The line AX1' is a part of the curved surface with the radius of curvature Rm at the center. Also, as described above, since the substrate P is held by the support surface P2 of the cylindrical substrate support cylinder 25, the exposure surface Sp of the surface of the substrate P becomes the curved surface of the curvature radius Rp (curved in the ZX plane) Part. Furthermore, the center of curvature of the projection image surface Sm, that is, the center line AX1', and the center axis AX2 of the substrate support cylinder 25 are parallel to each other. If it is included in the plane KS parallel to the YZ plane, the plane KS is located at the midpoint of the exposure width 2A , And then become a line Cp extending in the Y direction in which the projection image surface Sm with the radius Rm and the exposure surface Sp with the radius Rp contact. In addition, for the purpose of explanation, the radius Rp of the exposure surface Sp and the radius Rm of the projection image surface Sm are set to a relationship of Rp>Rm.

Here, the cylindrical roller 21 holding the mask M is rotated at an angular velocity ωm by the first driving unit 22, and the substrate supporting cylinder 25 supporting the substrate P (exposure surface Sp) is driven by the second driving unit 26 Rotate at angular velocity ωp. In addition, the plane orthogonal to the plane KS and including the line Cp between the projection image plane Sm and the exposure plane Sp is referred to as the reference plane HP. The reference plane HP is parallel to the XY plane, and it is assumed that the reference plane HP moves in the X direction at a virtual moving speed V (constant speed). This movement speed V coincides with the movement speed (peripheral speed) of the projection image surface Sm and the exposure surface Sp in the circumferential direction. The exposure area (projection area PA) of the present embodiment has a width of 2A in the direction parallel to the reference plane HP with the line Cp between the projection image surface Sm and the exposure surface Sp as the center. That is, the exposure area (projection area PA) is included in the movement direction of the reference plane HP from the connection line Cp between the projection image surface Sm and the exposure surface Sp to the +X direction and the -X direction after each movement distance A. To the area.

Since the projection image surface Sm rotates on the surface of the curvature radius Rm at the angular velocity ωm, the specific point on the projection image surface Sm existing on the connection line Cp is rotated after the time t is θm=ωm•t. Therefore, if the specific point is viewed on the reference plane HP, it is located at the point Cp1 after moving Xm=Rm‧sin(θm) in the +X direction. On the other hand, if the above-mentioned specific point on the connection line Cp moves linearly along the reference plane HP at the moving speed V, then the specific point is located at the point after moving V‧t in the +X direction after the time t has passed Cp0. Therefore, the shift amount of the movement amount in the X direction when the specific point on the line Cp has moved along the projection image plane Sm after the elapse of time t and the amount of movement in the X direction when the reference plane HP has moved linearly is △1 , Is △1=V‧t-Xm=V‧t-Rm‧sin(θm).

Similarly, because the exposure surface Sp rotates on the surface of the curvature radius Rp at an angular velocity ωp, a specific point on the exposure surface Sp existing on the connection line Cp, if viewed on the reference plane HP, will rotate after time t θp=ωp‧t. Therefore, the specific point on the exposure surface Sp is located at the point Cp2 after moving Xp=Rp‧sin(θp) in the +X direction. Therefore, the shift amount Δ2 between the movement amount in the X direction when the specific point on the line Cp has moved along the exposure surface Sp after the time t has passed and the movement amount in the X direction when the reference plane HP has moved linearly, △2=V‧t-Xp=V‧t-Rp‧sin(θm). The above offset △1 and △2 are also called the projection error when projecting a point on the cylindrical surface onto the plane (reference plane HP). As previously explained in FIG. 5, in this embodiment, in the projection area PA of the exposure width 2A shown in FIG. 7, the projected image of the pattern of the mask M is projected on the exposure surface Sp in a telecentric state. That is, in the XZ plane, each point on the projection image plane Sm is projected on the exposure plane Sp along a line parallel to the plane KS (line perpendicular to the reference plane HP). Therefore, the point Cp1 (position Xm) on the projection image surface Sm corresponding to the point Cp0 on the reference plane HP is also projected on the exposure surface Sp at the same position Xm in the X direction, and on the same X-direction position Xm corresponding to the reference plane HP The position Xp of the point Cp2 on the exposure surface Sp of the point Cp0 is offset. The main reason for this deviation is that the radius Rm of the projection image surface Sm is different from the radius Rp of the exposure surface Sp.

As mentioned above, when the radius Rm and the radius Rp are different, the difference between the offset Δ1 of the point Cp1 on the projection image surface Sm and the offset Δ2 of the point Cp2 on the exposure surface Sp shown in Fig. 7 The component △(=△1-△2) changes gradually corresponding to the position in the X direction within the exposure width 2A. Therefore, by quantifying (simulating) the difference Δ of the offset caused by the radius difference (Rm/Rp) between the projection image surface Sm and the exposure surface Sp within the exposure width 2A, it can be set to take into account the projection exposure on the substrate The best exposure conditions after the quality of the pattern on P (the quality of the projected image). In addition, the difference Δ is also called the projection error when the cylindrical projection image surface Sm is transferred to the cylindrical exposure surface Sp.

8A, as an example, the radius Rm of the projection image surface Sm is set to 125mm, and the radius Rp of the exposure surface Sp is set to 200mm, so that the peripheral speed of the projection image surface Sm (set to Vm) and the peripheral speed of the exposure surface Sp (Set as Vp) Under the condition that it is consistent with the moving speed V, as the exposure width 2A in the range of ±10mm, calculate the above-mentioned shift amount △1, △2 and the change of the difference component △. In FIG. 8A, the horizontal axis represents the coordinate position [mm] on the reference plane HP with the center of the projection area PA (the position through which the surface KS passes) as the origin, and the vertical axis represents the offset △1, △2, and the difference △[μm]. As shown in Fig. 8A, when the peripheral speed Vm of the projection image surface Sm is the same as the peripheral speed Vp of the exposure surface Sp, the absolute value of the difference component Δ is from the position of the line Cp between the projection image surface Sm and the exposure surface Sp (Origin) It gradually increases as it moves away from the ±X direction. For example, in order to faithfully transfer a pattern with a minimum line width of several μm to 10 μm, while suppressing the absolute value of the difference component △ to about 1 μm, from the calculation result of FIG. 8A, the exposure width 2A of the projection area PA must be It is ±6mm (width 12mm) or less.

In addition, the peripheral speed Vm of the projected image surface Sm, if the peripheral speed of the pattern surface of the mask M held on the cylindrical drum 21 is set to Vf, it is set as Vm=β‧ according to the projection magnification β of the projection optical system PL The relationship between Vf. For example, if the projection magnification β is 1.00 (equal magnification), the peripheral speed Vf of the pattern surface of the mask M and the peripheral speed Vp of the exposure surface Sp are set equal, and if the projection magnification β is 2.00 (double magnification), set 2‧Vf=Vp. Generally speaking, as shown in FIG. 8A, since the circumferential speeds of the projected image surface Sm and the exposure surface Sp are set to Vm=Vp, the cylindrical roller 21 holding the mask M and the substrate supporting cylinder supporting the substrate P are set The rotational angular velocity of 25 is precisely controlled into the relationship of β‧Vf=Vp (reference speed relationship). However, try to give a slight difference between the peripheral speed Vm of the projection image surface Sm and the peripheral speed Vp of the exposure surface Sp, and simulate how the difference △ in FIG. 8A changes as shown in FIG. 8C described later. There is a slight difference between the speed Vm and the peripheral speed Vp, and the usable exposure width can be enlarged by 2A while the absolute value of the difference component Δ is kept small. In this embodiment, under the condition that the radius Rp of the exposure surface Sp is larger than the radius Rm of the projection image surface Sm, the peripheral velocity Vp of the exposure surface Sp is relatively lower than the peripheral velocity Vm of the projection image surface Sm. Specifically, the peripheral speed Vp of the exposure surface Sp is not changed, but the rotational angular speed ωm on the side of the projection image surface Sm (mask M) is slightly changed so that the peripheral speed Vm of the projection image surface Sm is compared with the reference surface shown in FIG. 7 HP's movement speed V is slightly higher. The angular velocity after the change is set to ωm', and the rotation angle of the projection image surface Sm after the elapse of time t is set to θm'. Try to make the peripheral speed Vm of the projection image surface Sm a little higher than the moving speed V, and calculate the offset Δ1, it can be seen that the graph curve of the offset Δ1 in FIG. 8A changes to have a negative slope at the origin 0.

Therefore, in this embodiment, using this tendency, the circumferential velocity Vm (angular velocity ωm') of the projection image surface Sm is set so that the position within the exposure width 2A is symmetrical with the origin 0, and the difference is △ Becomes 0. 8B is a graph showing the calculation results of the difference Δ, the offset Δ1, and Δ2 obtained by changing the circumferential velocity Vm of the projection image surface Sm. The definition of the vertical axis and the horizontal axis is the same as that of FIG. 8A. In Fig. 8B, although the graph of the offset Δ2 is the same as that shown in Fig. 8A, the graph of the offset Δ1 is that the angular velocity ωm'(θm') of the projection image surface Sm is set in the exposure width The offset △1 in each position of +5mm and -5mm and the origin 0 becomes 0. As a result, the difference component △ changes with a negative inclination within the range of ±4mm in the exposure width, and changes with a positive inclination in the outer range. The origin in the exposure width is 0, +6.4mm,- Each position of 6.4mm becomes 0.

When the allowable range as the difference component Δ is, for example, about ±1 μm, although the exposure width under the conditions of FIG. 8A was ±6 mm, the exposure width under the conditions of FIG. 8B was expanded to approximately ±8 mm. This means that the size of the scanning exposure direction (circumferential direction) of the projection area PA can be increased from 12mm to 16mm (about 33% increase). It also means that as long as the illuminance of the exposure illumination light is the same, the pattern can be When the transfer fidelity is reduced, the transfer speed of the substrate P can be increased by 33%, and the productivity can be improved. In addition, being able to increase the size of the projection area PA by 33% also means that the amount of exposure given to the substrate P can be increased correspondingly, and the exposure conditions can be alleviated. In addition, the exposure device U3 can perform servo control while measuring the rotation of the cylindrical drum 21 holding the mask M and the rotation of the substrate supporting cylinder 25 supporting the substrate P with a rotary encoder with high resolution. Makes a small difference in the rotation speed while performing high-precision rotation control.

If the peripheral speed Vp of the exposure surface Sp is set equal to the moving speed V of the reference surface HP, and the peripheral speed Vm of the projected image surface Sm is slightly higher than the moving speed V of the reference surface HP, the difference is shown in FIG. 8A △ will change as shown in Fig. 8C. Fig. 8C shows the graph of only the difference component △ in Fig. 8A, the change rate of the peripheral velocity Vm of the projection image surface Sm with respect to the peripheral velocity Vp(=V) of the exposure surface Sp is set to α〔=(Vm- The tendency when Vp)/Vp]% changes from ±0% by +0.01% each. The graph of the difference component △ of α=±0% in Fig. 8C is the same as the graph of the difference component △ in Fig. 8A. When the rate of change α=±0%, the peripheral speed Vm is consistent with the peripheral speed Vp. For example, when the rate of change α=+0.02%, the peripheral speed Vm is 0.02% larger than the peripheral speed Vp. According to the calculation in FIG. 8C, in FIG. 8B, the simulation was performed in a state where the circumferential velocity Vm of the projection image surface Sm was increased by about 0.026% compared to the reference velocity V (=Vp) of the reference surface HP. The simulation result of Fig. 8C is obtained by replacing the θm of Rm‧sin(θm) with (1+α)‧θm in the formula for obtaining the offset △1 of the reference plane HP compared to the projection image plane Sm , Change the rate of change α to various values to obtain. In fact, if V•t is replaced by A, which represents the position (mm) in the X direction of the exposure width, it can be easily obtained by the following formula.

△=△1-△2=(A-Rm‧sin〔(1+α)‧A/Rm〕)-△2

As described above, when the radius Rm of the projection image surface Sm and the radius Rp of the exposure surface Sp are different, a slight difference is given to the respective moving speeds (peripheral speeds Vm, Vp) of the projection image surface Sm and the exposure surface Sp , Which can expand the setting range of various exposure conditions (the radius of the mask M, the sensitivity of the light sensing layer, the feed speed of the substrate P, the power of the light source for lighting, the size of the projection area PA, etc.) during scanning exposure, and An exposure device that can flexibly respond to process changes etc. is obtained.

Next, with reference to FIG. 9, the comparison of the pattern image obtained on the exposure surface Sp when a slight difference is given to the circumferential speeds Vm and Vp of the projection image surface Sm and the exposure surface Sp as shown in FIG. 8B will be described. Figure 9 is the position (absolute value) of the exposure width where the origin 0 in Figures 8A and 7B is set to 0mm on the horizontal axis, and the contrast ratio is taken on the vertical axis where the value at the origin 0 is set to 1.00 (100%) Calculate the graph of the change of the contrast ratio corresponding to the position within the exposure width when there is no difference in the circumferential speed between the projection image surface Sm and the exposure surface Sp (Figure 8A) and when there is a difference in circumferential speed (Figure 8B). In this embodiment, the wavelength λ of the illumination beam EL1 (exposure light) is set to 365 nm, the numerical aperture NA of the projection optical system PL (PLM) shown in FIG. 4 is set to 0.0875, and the process constant k is set to 0.6. The maximum resolution Rs obtained under this condition is 2.5μm based on Rs=k‧(λ/NA), so after calculation, a 2.5μm L & S (line and space) pattern is used.

As shown in FIG. 9, by setting the peripheral velocity Vp of the larger curvature surface of the projection image surface Sm of the mask pattern and the exposure surface Sp on the substrate P to be slightly lower than the other peripheral velocity Vm, a high contrast ratio is obtained The exposure width is wider. For example, when the contrast ratio of about 0.8 is necessary to maintain the quality of the pattern image transferred to the exposure surface Sp, the exposure width is about ±6mm compared to the state without a circumferential speed difference (Vm=Vp). The exposure width under the condition of peripheral speed difference (Vm>Vp) can be ensured at least ±8mm. In addition, as long as the contrast ratio can be about 0.6, the exposure width in a state with a peripheral velocity difference (Vm>Vp) will expand to about ±9.5 mm. As described above, by giving a slight difference between the peripheral velocity Vm of the projection image surface Sm and the peripheral velocity Vp of the exposure surface Sp, even if the size of the projection area PA in the scanning exposure direction (exposure width 2A) is increased, the The contrast (image quality) of the projected image to be projected is well maintained for pattern exposure. In addition, since the exposure width 2A in the scanning exposure direction of the projection area PA can be increased, the feed speed of the substrate P can be increased, or the exposure light per unit area (projection beam EL2) in the projection area PA can be reduced Illuminance.

In addition, as shown in Fig. 8C, when the peripheral velocity difference (Vm-Vp) is changed little by little while simulating the difference △ of the position of the relative exposure width, the projection image surface of the pattern in the projection area PA The average value or the maximum value of the difference Δ of the deviation between Sm and the exposure surface Sp on the substrate P in the scanning exposure direction is preferably set to be smaller than the minimum line width (minimum size) of the pattern image to be transferred. For example, if you focus on the exposure width in FIG. 8B in the exposure width range of 0mm~+6mm, the average value of the difference component Δ in this range is about -0.42μm and the maximum value is about -0.66μm. In addition, focusing on the range of the exposure width of 0 mm to +8 mm, the average value of the difference component Δ in this range is about -0.18 μm, and the maximum value is about -1.2 μm. If the minimum line width of the pattern image to be transferred is set to 2.5μm in the previous simulation in Figure 9, the difference can be made regardless of whether it is in the range up to the exposure width of 6mm and the exposure width up to 8mm. The average value and maximum value of the component △ are set to be smaller than the minimum line width of 2.5μm.

In addition, it is preferable that the variation characteristic of the difference component Δ obtained by simulation is the position where the difference component Δ becomes 0 within the actual exposure width (the size of the projection area PA in the scanning exposure direction) as shown in FIG. 8B. Set at least three places. For example, when the projection area PA is set to an exposure width of ±8mm, during the scanning exposure, one point of the pattern image projected in the projection area PA is moved from the position of -8mm within the exposure width to the position of +8mm . During this period, a point in the pattern image is transferred to the exposure surface Sp through each of the position where the difference Δ is 0 -6.4mm, the position 0mm (origin), and the position +6.4mm. In this way, by precisely controlling the rotation speeds of the cylindrical roller 21 holding the mask M and the substrate supporting cylinder 25 so that at least three difference components Δ within the exposure width of the scanning exposure direction of the projection area PA become 0, The size (line width) error in the scanning exposure direction of the pattern image exposed in the projection area PA (exposure surface Sp) can be suppressed to be small, and the pattern can be transferred faithfully.

As previously explained, the maximum resolution Rs is determined by the numerical aperture NA on the side of the projection image surface Sm of the projection optical system PL, the wavelength λ of the illumination beam EL1, and the process constant k (usually less than 1), with Rs=k‧ (λ/NA) to specify. In this case, if the moving speed of the reference plane HP is set to V, the moving distance of the reference plane HP is set to x, and A is set to the absolute value of the exposure width, the following relationship is preferably satisfied.

This formula F(x) is a formula showing the difference △ of the position x of a certain point on the reference plane HP, but the relationship between the moving speed V of the reference plane HP and the moving distance x is as explained with reference to Fig. 7 , Which is equivalent to time t(=x/V). The exposure apparatus U3 of this embodiment satisfies the above formula, even if the exposure width of the effective projection area PA is increased, the pattern can be formed with good image quality without reducing the contrast of the projected pattern image. Substrate P.

In addition, the exposure apparatus U3 of this embodiment is capable of replacing the cylindrical drum 21 holding the mask M. In the case of a reflective cylindrical mask, a high reflection part and a low reflection part (light absorption part) as a mask pattern can be directly formed on the outer peripheral surface of the cylindrical drum 21. In this case, the mask replacement is performed for each cylindrical drum 21. At this time, sometimes the radius (diameter) of the cylindrical roller 21 of the reflective cylindrical mask newly installed in the exposure device may be different from the radius of the cylindrical mask installed before replacement. This point may occur when the size of the device to be exposed on the substrate P (the size of the display panel, etc.) is changed. In this embodiment, even in this case, it is determined in advance that the radius of the mask pattern surface of the cylindrical roller 21 after replacement is determined by calculation (simulation) as shown in Figures 8A to 7C and 9 The rotational angular velocity difference between the cylindrical roller 21 and the substrate support cylinder 25, the exposure width of the projection area PA to be set, the illuminance of the illumination beam EL2 to be adjusted, or the transport speed of the substrate P to be adjusted (the substrate support cylinder 25 Rotation speed) and other parameters. In addition, when a plurality of cylindrical rollers 21 whose radius Rm differs in units of millimeters or centimeters are installed interchangeably, a bearing on the exposure device side that adjusts and supports the rotation center axis AX1 of the cylindrical roller 21 in the Z direction is provided Ministry of agencies. In addition, when changing the exposure width in the scanning exposure direction of the projection area PA as a parameter for adjustment, it can be adjusted by, for example, the illumination field diaphragm 55 in FIG. 4 or the projection field diaphragm 63 of the intermediate image plane P7. As described above, the exposure device U3 (substrate processing device) can appropriately adjust the exposure conditions corresponding to the photomask M by adjusting the various parameters described above, and can perform exposure suitable for the photomask M.

The exposure device U3 preferably adjusts the substrate support according to the calculated value based on the conditional formula specified based on the relationship between the projection image surface Sm and the exposure surface Sp, and the calculated value added to the measurement results of the expansion and contraction of the substrate P in the process The mechanism 12 (substrate support cylinder 25) moves at least one of the moving speed of the substrate P and the width of the projection area PA in the scanning exposure direction.

The exposure device U3 of this embodiment uses a projection area of a projection optical system PL on the premise that the width direction size of the entire pattern area of the display panel, etc. formed on the substrate P is larger than the size of the projection area PA in the axis AX2 direction PA has six projection optical systems PL1~PL6 arranged in the right picture of Figure 3, but the number can be one or more than seven according to the width of the substrate P.

When a plurality of projection optical systems PL are arranged in the width direction of the substrate P, the total exposure amount of the exposure width of each projection area PA during scanning exposure is preferably in the direction orthogonal to the scanning exposure direction (the width of the substrate P The direction) is almost constant everywhere (for example, within ± several%).

[Second Embodiment]

Next, with reference to FIG. 10, the exposure apparatus U3a of 2nd Embodiment is demonstrated. In addition, in order to avoid repetitive descriptions, the description will be given for the parts that are different from the first embodiment, and the same components as those of the first embodiment are given the same reference numerals as those of the first embodiment. Fig. 10 is a diagram showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the second embodiment. Although the exposure apparatus U3 of the first embodiment is configured to hold the substrate P passing through the projection area by the cylindrical substrate support cylinder 25, the exposure apparatus U3a of the second embodiment is held by the movable substrate support mechanism 12a The structure of the flat substrate P.

In the exposure apparatus U3a of the second embodiment, the substrate support mechanism 12a includes a substrate stage 102 that holds the substrate P in a planar shape, and the substrate stage 102 is positioned along X in a plane (XY plane) orthogonal to the center plane CL. A moving device that scans and moves in the direction (not shown).

Since the supporting surface P2 of the substrate P in FIG. 10 is a plane substantially parallel to the XY plane, the projection light beam EL2 reflected by the mask M and incident on the projection optical module PLM (PL1~PL6) is set to be projected on the substrate P The chief ray of the projection beam EL2 is perpendicular to the XY plane.

Also, in the second embodiment, similar to the previous Fig. 2, when viewed in the XZ plane, from the center point of the illumination area IR1 (and IR3, IR5) on the mask M to the illumination area IR2 (and IR4, IR6) The perimeter of the center point of) and the perimeter of the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the supporting surface P2 to the center point of the second projection area PA2 (and PA4, PA6) are the Set to be substantially equal.

The exposure device U3a in FIG. 10 is the same. The lower control device 16 controls the moving device of the substrate support mechanism 12 (linear motor for scanning exposure or actuator for micro-movement, etc.) to drive synchronously with the rotation of the drum 21 The substrate stage 102. In addition, the substrate P in this embodiment may be a flexible substrate such as a resin film, or may be a glass plate for liquid crystal display panels. Furthermore, when scanning exposure is performed by the precise movement of the substrate stage 102, a structure (for example, a pin chuck method, a porous method flat holder, etc.) is provided on the supporting surface P2 to vacuum the substrate P. In addition, when the substrate stage 102 does not move but only supports the substrate P in a planar manner, the support surface P2 is provided with a mechanism for supporting the substrate P in a low friction state or a non-contact state by the gas layer of an air bearing ( For example, a flat holder of the Bernoulli clamp method, etc.) and a tension applying mechanism that applies a predetermined tension to the substrate P to maintain flatness.

Next, the relationship between the movement of the projection image surface Sm of the pattern of the mask M and the movement of the exposure surface Sp of the substrate P in the exposure apparatus U3a of the second embodiment will be described with reference to FIG. 11. FIG. 11 is an explanatory diagram that exaggerates the relationship between the projection image surface Sm of the pattern of the mask M and the exposure surface Sp on the substrate P under the same conditions and definitions as the previous FIG. 7.

The exposure device U3a forms the projected image surface Sm of the pattern of the cylindrical mask M by the telecentric projection optical system PL. The projection image surface Sm is also the best focus surface of the pattern of the imaged mask M. Here, since the pattern surface of the mask M is also formed with a curved surface with a radius of curvature Rm, the projection image surface Sm is also a cylindrical surface with a radius of curvature Rm centered on the imaginary AX1' (in the ZX plane, it is a circular arc curve). ) Part. On the other hand, since the substrate P is held flat by the substrate stage 102, the exposure surface Sp is a flat surface (a straight line in the ZX plane). Therefore, the exposure surface Sp of this embodiment becomes a surface which coincides with the reference surface HP shown in FIG. 7 previously. That is, the exposure surface Sp can be regarded as a surface with an infinite radius of curvature Rp (∞) or a curved surface with a maximum radius Rm compared to the projection image surface Sm.

Since the projection image surface Sm rotates on the surface of the curvature radius Rm at an angular velocity ωm, the point Cp on the projection image surface Sm that the projection image surface Sm and the exposure surface Sp contact is located at the rotated angle θm= The point Cp1 after ωm‧t. Therefore, the position Xm of the point Cp1 on the projection image plane Sm along the direction (X direction) of the reference plane HP becomes Xm=Rm‧sin(θm). Furthermore, the exposure surface Sp is a plane that coincides with the reference plane HP, so the point Cp on the exposure surface Sp where the projection image surface Sm and the exposure surface Sp are in contact is moved in the X direction after the time t has passed Xp=V‧ The point Cp0 after t. Therefore, as explained in FIG. 7, the offset Δ1 between the point Cp1 on the projection image surface Sm and the point Cp0 on the exposure surface Sp after the time t has elapsed in the X direction (scanning exposure direction) is Δ1= V‧t-Rm‧sin(θm).

The offset Δ1 in FIG. 11 is the projection error (sin error) caused by the constant angular velocity movement of the mask M or the projection image surface Sm, and the constant linear movement of the substrate P or the exposure surface Sp. If the offset Δ1 is set to 0 when the point Cp is located on the surface KS that becomes the center within the exposure width 2A, it will gradually increase from this position in the ±X direction. During the scanning exposure, the exposure surface Sp on the substrate P is continuously accumulated and transferred with the pattern image of the projection image surface Sm in the range of the exposure width 2A. However, due to the influence of the projection error of the offset Δ1, the size of the pattern image to be transferred in the scanning exposure direction will have an error compared with the size of the pattern on the mask M, and the transfer fidelity is reduced.

Therefore, in this embodiment as well, by setting the peripheral velocity of the surface with the smaller radius of curvature in the projection image surface Sm and the exposure surface Sp to be slightly higher than the peripheral velocity of the surface with the larger radius of curvature, it is possible to obtain The same effect as the previous first embodiment. In this embodiment, the radius of curvature Rp of the exposure surface Sp and the radius of curvature Rm of the projection image surface Sm are related to Rp》Rm, so the peripheral speed Vm of the projection image surface Sm is compared to the movement speed V of the exposure surface Sp Slightly higher.

Hereinafter, an example of performing various simulations using the configuration of the exposure device U3a will be described with reference to Figs. 12 to 18. Figure 12 is a graph showing the change in offset △1 due to the difference between the moving speed V of the exposure surface Sp (same as the peripheral speed Vp) and the peripheral speed Vm of the projection image surface Sm, the vertical axis of Figure 12 It shows the offset Δ1 in FIG. 11, and the horizontal axis shows the exposure width as in FIGS. 8A and 7B. In addition, in each simulation after FIG. 12, the radius Rm of the mask M, that is, the radius Rm of the projection image surface Sm, is set to 150 mm. As illustrated in FIG. 11, when the moving speed V (peripheral speed Vp) of the exposure surface Sp and the peripheral speed Vm of the projection image surface Sm are set equal, that is, when there is no difference in peripheral speed, if the offset is set The allowable range of △1 is set to about ±1μm, and the exposure width is about ±5mm.

Therefore, if the angular velocity of the projection image surface Sm is adjusted from ωm to ωm' (ωm<ωm') so that the peripheral velocity Vm of the projection image surface Sm is slightly higher than the movement velocity V (peripheral velocity Vp) of the exposure surface Sp, then The shift amount △1' changes with a negative tilt in the range of the exposure width ±4mm centered on the origin 0, and changes with a positive tilt outside the range. If the position on the exposure width where the offset △1' is 0 is set to about ±6.7mm, the allowable range of the offset △1' is about ±1μm and the exposure width is about ±8mm. This is to increase the exposure width that can be used as a scanning exposure by about 60% compared to the case where the peripheral speed difference is not given.

Next, similar to the previous Fig. 9, the case where the moving speed V (= the peripheral speed Vp) of the exposure surface Sp coincides with the peripheral speed Vm of the projection image surface Sm (no difference in peripheral speed) and the case where only a slight difference is provided The change of the contrast value (or contrast ratio) of the pattern image (with a difference in peripheral speed). FIG. 13A shows that when the numerical aperture NA on the side of the exposure surface Sp of the projection optical system PL is set to 0.0875, the wavelength of the illumination beam EL1 is set to 365 nm, the process constant k is set to 0.6, and the illumination σ is set to 0.7, when The contrast of the image obtained on the exposure surface Sp when projecting the L & S pattern with the maximum resolution Rs=2.5μm formed on the mask M. FIG. 13B shows the comparison of the images obtained on the exposure surface Sp when projecting the isolated line (ISO) pattern with the maximum resolution Rs=2.5 μm obtained under the same projection conditions.

Regardless of whether it is a 2.5μm L & S pattern or an ISO pattern, the bright part of the image should be close to 1.0 as a contrast value, and the dark part should be close to 0 in intensity distribution CN1. The contrast value is calculated from the maximum value Imax of the light intensity of the bright part and the minimum value Imin of the light intensity of the dark part according to (Imax-Imin)/(Imax+Imin). Although the intensity distribution CN1 is generally a relatively high state, the so-called low state is that the difference (vibration width) between the maximum value Imax and the minimum value Imin is small like the intensity distribution CN2. The intensity distribution CN1 of the image shown in Figs. 13A and 12B is the contrast of the static projection image of the 2.5μm L & S pattern or the ISO pattern, but in the case of scanning exposure, the substrate P moves to the set exposure width During the period, for example, the static intensity distribution CN1 is shifted in the scanning exposure direction according to the difference amount △ illustrated in FIG. 8B or the shift amount △ 1 illustrated in FIG. The final comparison of the pattern image on the substrate P.

Next, under the projection exposure conditions (Rm=150mm, Rp=∞, NA=0.0875, λ=365nm, k=0.6) illustrated in Figures 13A and 12B, the 2.5μm L & S pattern is compared to the projection image The simulation results of the change of the contrast value (contrast ratio) of the position of the exposure width are shown in Fig. 14 and Fig. 15. The horizontal axis of Figure 14 and Figure 15 represents the position of the exposure width A on the positive side, and the vertical axis represents the contrast value calculated based on (Imax-Imin)/(Imax+Imin) and the contrast value at the exposure width 0mm Contrast ratio when normalized to 1.0. Furthermore, FIG. 14 shows the contrast change when the moving speed V (=peripheral speed Vp) of the exposure surface Sp coincides with the peripheral speed Vm of the projection image surface Sm and there is no difference in the peripheral speed, and FIG. 15 shows the offset in FIG. 12 The change characteristic of △1' is similar to the contrast change when the peripheral speed Vm of the projection image surface Sm is slightly larger than the movement speed V (=peripheral speed Vp) of the exposure surface Sp.

As shown in Figure 14, when there is no difference in circumferential velocity (before correction), the contrast ratio is approximately constant from the origin 0 to 4mm at the position of the exposure width, but it drops sharply from the position above 5mm. . Then, when the position of the exposure width is above 8mm, the contrast ratio is below 0.4, and the exposure of the photoresist may have insufficient contrast. In addition, in the simulation, the contrast value at the position of the exposure width 0mm is about 0.934, and the contrast ratio is displayed after normalizing the value to 1.0.

In contrast, as shown in Fig. 15, when there is a difference in peripheral speed (before correction), the contrast ratio gradually decreases from 1.0 to about 0.8 at the position of the exposure width between 0~4mm, but at the position of 4mm~ Between 8mm, it is maintained at about 0.8mm. From the simulation results, the contrast ratio at the position 5mm of the exposure width is about 0.77, and the contrast ratio at the position 7mm is about 0.82. As mentioned above, by making the peripheral speed Vm of the projection image surface Sm slightly larger than the moving speed V (=peripheral speed Vp) of the planar exposure surface Sp, the exposure width of the projection area PA that can be set during scanning exposure can be increased 2A.

Also, as shown in Figure 16, the contrast ratio of the 2.5μm ISO pattern image when there is no difference in the circumferential velocity (before correction), although the position of the exposure width is approximately constant up to 5mm, it gradually decreases from 5mm or more. It is about 0.9 at the position 6 mm, about 0.6 at the position 8 mm, about 0.5 at the position 9 mm, and then about 0.4 at the position 10 mm. In addition, the contrast ratio in Fig. 16 is based on the contrast value (approximately 0.934) of the 2.5μm L & S pattern image obtained at the position of the exposure width of 0mm in Fig. 14 to obtain the 2.5μm ISO pattern The ratio of the obtained contrast value (approximately 0.968 at position 0mm). Therefore, the initial value of the contrast ratio shown in FIG. 16 (the value at the position 0 mm) is about 1.04.

On the other hand, when there is a peripheral speed difference (after correction) as shown in Figure 17, the contrast ratio of the 2.5μm ISO pattern image is maintained at 0.9 or more in the range of 0~8mm at the position of the exposure width. The position 9mm is reduced to about 0.8, but the position 10mm also maintains about 0.67. As mentioned above, by making the peripheral speed Vm of the projection image surface Sm relatively larger than the moving speed V (=peripheral speed Vp) of the planar exposure surface Sp, the exposure of the projection area PA that can be set during scanning exposure can be increased Width 2A.

In addition, a slight difference is given between the peripheral speed Vm of the projection image surface Sm and the peripheral speed Vp (or the linear movement speed V) of the exposure surface Sp, that is, the difference component △ in Figure 8B or the deviation in Figure 12 can be obtained. In order to find out the range of the best exposure width 2A (or A) for the characteristics of the displacement △1', there is also an evaluation method using the relationship between the difference △ or the displacement △1' and the resolution Rs. Although this method is described below, for simplicity, the difference Δ in FIG. 8B or the offset Δ1' in FIG. 12 is renamed as the image displacement amount Δ.

This evaluation method calculates the relationship between the average value of the image displacement △/Rs or the average value of the image displacement △ ² /Rs for the position of each exposure width. Thus, according to FIG. 18, FIG. 19 will be described as an average value of the displacement amount △ / Rs to the evaluation value Q1, the displacement amount as the average of ^two △ / Rs to the evaluation value Q2 while the analog embodiment. Although Fig. 18 is the same as the graph of the offset Δ1' shown in Fig. 12, it sets the calculated exposure width to the range of ±12mm. In addition, the sampling points on the exposure width of the calculated offset Δ1' (image displacement Δ) are 0.5 mm intervals as in FIG. 12.

The average value of the image displacement amount Δ is the value obtained by adding and averaging the absolute value of each offset amount Δ1' obtained from the origin of the exposure width 0mm to the sampling point of the eye. For example, the average value of the image displacement △ at the sampling point at position -10mm is added to the offset △1' obtained at each sampling point from position 0mm to -10mm (21 points in Figure 18) The absolute value of, and divide it by the number of sampling points. In the case of Fig. 18, the total value of the absolute value of the offset Δ1' of each sampling point from the position 0mm to -10mm is 20.86μm, and the average value after dividing by the sampling point 21 is about 0.99μm. In addition, the resolution Rs in the simulation is set to 2.09μm when NA=0.0875, λ=368nm, and process constant k=0.5. Therefore, the estimated value Q1 (no unit) at the position of the exposure width of -10 mm is about 0.48. After the above calculation is performed for each position (sampling point) within the exposure width, the tendency of the evaluation value Q1 to change can be known.

In addition, the average value of (image displacement △) ² is the square value of the absolute value of each offset △1' obtained from the origin of the exposure width 0mm to the sampling point of the eye ( μm ² ) The average value after adding. In the case of Figure 18, for example, square the absolute value of the offset △1' of each sampling point at position 0mm to -10mm and add the value to 42.47μm ² , divided by the average value of 21 sampling points It is about 2.02μm ² . Since the resolution Rs in the simulation is set to 2.09 μm, the evaluation value Q2 at the position of the exposure width of -10 mm is about 0.97 μm. After performing the above calculation with each position (sampling point) within the exposure width, the tendency of the evaluation value Q2 (μm) to change can be known.

Fig. 19 is a graph in which the evaluation values Q1 and Q2 obtained as described above are taken on the vertical axis, and the position of the exposure width is taken on the horizontal axis. The evaluation value Q1 (average value of image displacement Δ/resolution Rs) changes gradually as the exposure width (absolute value) becomes larger, and becomes approximately 1.0 at approximately ±12 mm of the exposure width. This point means that the average value of the image displacement Δ at the position of ±12mm is approximately the same as the resolution Rs. On the other hand, the evaluation value Q2 (average value of the amount of image displacement △ ² /resolution Rs) changes with the same tendency as the evaluation value Q1 in the range of ±8 mm to the exposure width, but it is abruptly greater than 8 mm The ground changes to approximately 1 (μm) at the position of the exposure width ±10mm.

Here, in the contrast change of the ISO pattern shown in FIG. 17 or the contrast change of the L & S pattern shown in FIG. 15, the contrast ratio is greatly reduced from the point where the exposure width is 8 mm or more. The changes in the contrast ratio obtained in Fig. 15 and Fig. 17 are when the resolution Rs is set to 2.5 μm. Although it is not calculated with Rs=2.09 μm, the tendency is roughly the same. As mentioned above, by the evaluation method that uses the evaluation value Q1 or Q2 as an index, the optimal exposure width that reflects the contrast change can also be determined.

In addition, in the case of this embodiment, the formula F(x) used in the previous first embodiment is replaced by the exposure surface Sp moving in the X direction in parallel with the reference plane HP at the moving speed V (peripheral speed Vp) As the following formula F'(x).

The exposure apparatus U3a of the second embodiment shown in Fig. 10 can apply this formula F'(x) to the formula of the above-mentioned first embodiment, and by satisfying this relationship, the same effect as the first embodiment can be obtained.

[Third Embodiment]

Next, the exposure apparatus U3b of the third embodiment will be described with reference to FIG. 20. In addition, in order to avoid repetitive descriptions, only the parts that are different from the first and second embodiments are described, and the same components as in the first and second embodiments are given the same as those in the first and second embodiments. Symbol to illustrate. Fig. 20 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) of the third embodiment. Although the exposure device U3 of the first embodiment uses a reflection type mask in which light reflected on the pattern surface of the mask M becomes a projection beam, the exposure device U3b of the third embodiment uses a pattern surface that transmits through the mask. The light becomes the structure of the transmissive mask for the projection beam.

In the exposure apparatus U3a of the third embodiment, the mask holding mechanism 11a includes a cylindrical roller (mask holding cylinder) 21a that holds the mask M, a guide roller 93 that supports the cylindrical roller 21a, and the drive of the cylindrical roller 21a The roller 94 and the drive unit 96.

The cylindrical roller 21a forms a mask surface where the illumination area IR of the mask MA is arranged. In this embodiment, the mask surface includes a surface (hereinafter referred to as a cylindrical surface) that rotates a line segment (generating bar) around an axis parallel to the line segment (the central axis of the cylindrical shape). The cylindrical surface is, for example, a cylindrical outer peripheral surface, a cylindrical outer peripheral surface, or the like. The cylindrical roller 21a is made of, for example, glass or quartz, and has a cylindrical shape with a certain thickness, and its outer peripheral surface (cylindrical surface) forms a mask surface. That is, in this embodiment, the illumination area on the mask MA is curved into a cylindrical surface shape having a radius of curvature Rm from the center line. The part of the cylindrical drum 21a that overlaps the pattern of the mask M when viewed from the radial direction of the cylindrical drum 21a, for example, the central part of the cylindrical drum 21a other than both ends in the Y-axis direction is translucent to the illumination light beam EL1.

The mask MA is, for example, a transmissive flat sheet mask with a pattern formed on one side of a long strip of ultra-thin glass plate with good flatness (for example, a thickness of 100~500μm) with a shading layer such as chrome, so that it follows the circle The outer peripheral surface of the drum 21a is curved, and it is used in a state of being wound (attached to) the outer peripheral surface. The mask MA has a pattern non-formation area where no pattern is formed, and is mounted on the cylindrical drum 21a in the pattern non-formation area. The mask MA is detachable and attachable to the cylindrical drum 21a. The mask MA is the same as the mask M of the first embodiment, and can replace the cylindrical drum 21a of the transparent cylindrical base material and wrap around the cylindrical drum 21a of the transparent cylindrical base material. The surface is directly drawn and integrated with a mask pattern formed by a light-shielding layer such as chrome. In this case, the cylindrical roller 21a also functions as a holding member of the mask pattern.

The guide roller 93 and the drive roller 94 extend in the Y-axis direction parallel to the central axis of the cylindrical drum 21a. The guide roller 93 and the driving roller 94 are arranged to be able to rotate around an axis parallel to the central axis. The guide roller 93 and the driving roller 94 are arranged so as not to contact the mask MA held by the cylindrical drum 21a. The driving roller 94 is connected to the driving part 96. The driving roller 94 transmits the torque supplied from the driving portion 96 to the cylindrical drum 21a to rotate the cylindrical drum 21a around the central axis.

The lighting device 13a of this embodiment includes a light source (not shown) and an illuminating optical system ILa. The illumination optical system ILa is provided with a plurality of (for example, six) illumination optical systems ILa1 to ILa6 arranged in the Y-axis direction corresponding to each of the plurality of projection optical systems PL1 to PL6. As the light source, various light sources can be used in the same way as the aforementioned various lighting devices 13a. The illumination light emitted from the light source is uniformized in the illuminance distribution and divided into a plurality of illumination optical systems ILa1~ILa6 through light guide members such as optical fibers.

Each of a plurality of illumination optical systems ILa1~ILa6, including a plurality of optical components such as lenses, an integrator optical system, a rod lens, a fly-eye lens, etc., illuminates the illumination area IR with an illumination beam EL1 with a uniform illuminance distribution. In this embodiment, a plurality of illumination optical systems ILa1 to ILa6 are arranged inside the cylindrical drum 21a. Each of the plurality of illumination optical systems ILa1 to ILa6 passes through the cylindrical drum 21a from the inner side of the cylindrical drum 21a to illuminate each illumination area on the mask MA held on the outer peripheral surface of the cylindrical drum 21a.

The illuminating device 13a guides the light emitted from the light source through the illuminating optical systems ILa1 to ILa6, and irradiates the guided illuminating beam to the mask MA from the inside of the cylindrical drum 21a. The illuminating device 13 illuminates a part (illumination area IR) of the mask M held by the cylindrical drum 21a with a uniform brightness by the illuminating light beam EL1. In addition, the light source may also be arranged inside the cylindrical drum 21a or outside the cylindrical drum 21a. In addition, the light source may be a device (external device) different from the exposure device U3b.

Exposure device U3a, when using a transmissive mask as the mask, is similar to the exposure devices U3 and U3a, by comparing the moving speed of the projection image surface Sm (peripheral speed Vm) and the moving speed of the exposure surface Sp (V or The relationship between the peripheral speed Vp) is adjusted (corrected) in the same way as in the previous second embodiment, and the exposure width that can be used in scanning exposure can be enlarged.

[Fourth Embodiment]

Next, with reference to FIG. 21, the exposure apparatus U3c of 4th Embodiment is demonstrated. In order to avoid repetitive descriptions, only the parts that are different from the previous embodiments are described, and the same components as those in the previous embodiments are given the same reference numerals. Fig. 21 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to a fourth embodiment. The exposure apparatuses U3, U3a, and U3b of the previous embodiments all use a cylindrical mask M held by a rotatable cylindrical drum 21 (or 21a). The exposure apparatus U3c of the fourth embodiment is provided with a mask holding mechanism 11b, which includes a reflection type mask MB holding a flat plate shape, and a mask stage 110 that moves along the X direction of the XY plane during scanning exposure. .

In the exposure apparatus U3c of the fourth embodiment, the mask holding mechanism 11b is provided with a mask stage 110 for holding a flat reflective mask MB, and a mask stage 110 along a plane orthogonal to the center plane CL A mobile device that scans and moves in the X direction (not shown).

Since the mask surface P1 of the mask MB in FIG. 21 is a plane substantially parallel to the XY plane, the chief ray of the projection beam EL2 reflected from the mask MB is perpendicular to the XY plane. Therefore, the principal rays of the illumination beam EL1 from the illumination optical systems IL1 to IL6 in the illumination areas IR1 to IR6 on the illumination mask MB are also arranged to be perpendicular to the XY plane via the polarizing beam splitter PBS.

In addition, when the chief ray of the projection beam EL2 reflected from the mask MB is perpendicular to the XY plane, the first reflecting surface P3 of the first deflecting member 70 included in the first optical system 61 of the projection optical module PLM is The angle is set to reflect the projection light beam EL2 from the polarization beam splitter PBS, and the reflected projection light beam EL2 passes through the first lens group 71 and enters the first concave mirror 72. Specifically, the first reflecting surface P3 of the first deflecting member 70 is substantially set at 45° with respect to the second optical axis BX2 (XY plane).

In addition, in the fourth embodiment, similar to the previous figure 2, when viewed in the XZ plane, from the center point of the illumination area IR1 (and IR3, IR5) on the mask MB to the center of the illumination area IR2 (and IR4, IR6) The linear distance of the point in the X direction is set from the center point of the projection area PA1 (and PA3, PA5) on the substrate P along the support surface P2 of the substrate support cylinder 25 to the second projection area PA2 (and PA4, PA6) The perimeter distances of the center points are substantially equal.

The same applies to the exposure device U3c of FIG. 21. The lower control device 16 controls the moving device of the mask holding mechanism 11 (linear motor for scanning exposure or actuator for fine movement, etc.) in synchronization with the rotation of the substrate support cylinder 25 The photomask carrier 110 is driven. The exposure device U3c in FIG. 21 must perform scanning exposure during the synchronous movement of the mask MB in the +X direction, and then perform an action (rewind) to return the mask MB to the initial position in the -X direction. Therefore, when the substrate support cylinder 25 is continuously rotated at a constant speed and the substrate P is continuously fed at a constant speed (peripheral speed Vp), the pattern on the substrate P is not exposed during the rewinding operation of the mask MB , And the panel pattern is formed intermittently (separately) in the conveying direction of the substrate P. However, in practice, since the speed of the substrate P (peripheral speed Vp) during scanning exposure and the speed of the photomask MB are assumed to be 50~100mm/s, only the photomask stage 110 is required when the photomask MB is rolled back. Drive at the highest speed of, for example, 500~1000mm/s, which can reduce the margin of the panel pattern formed on the substrate P in the conveying direction.

Next, the relationship between the projected image surface Sm of the pattern of the mask in the exposure apparatus U3c of the fourth embodiment and the exposure surface Sp on the substrate P will be described with reference to FIG. 22. FIG. 22 illustrates the relationship between the movement of the projection image surface Sm of the mask pattern and the movement of the exposure surface Sp on the substrate P, which is equivalent to the opposite of the relationship between the projection image surface Sm and the exposure surface Sp described in FIG. 11 . That is, in FIG. 22, the pattern image formed on the projection image surface Sm of a plane shape (with an infinite radius of curvature) is transferred to the exposure surface Sp of the radius of curvature Rp.

Here, since the mask M is a plane, the projection image surface Sm (best focus plane) is also a plane. Therefore, the projection image plane Sm in FIG. 22 corresponds to the reference plane HP moving at the speed V shown in FIG. 7 previously. On the other hand, the exposure surface Sp on the substrate P is a cylindrical surface with a radius of curvature Rp (an arc in the ZX plane) similarly to the one shown in FIG. 7.

Similarly in this embodiment, if the angular velocity of the substrate support cylinder 25 (exposure surface Sp) is set to ωp, and the projection image surface Sm is in contact with the exposure surface Sp at the position of the surface KS as in FIG. 7, XP =Rp‧sin(ωp‧t) Calculate the C-direction position Xp of the point Cp2 that the contact point Cp moves along the exposure surface Sp of the radius Rp after time t. Here, ωp‧t is the rotation angle θp of the exposure surface Sp after the time t has elapsed from the contact point Cp as the origin. In contrast, the contact point Cp between the projection image surface Sm and the exposure surface Sp is the position Xm of the point Cp0 moved along the flat projection image surface Sm from the origin after the time t has elapsed because Xm=V‧t (but It is represented by V=Vm). Therefore, as in the previous embodiments, a projection error (amount of offset or image displacement) occurs between the projection image surface Sm and the exposure surface Sp.

If the projective error (offset or image displacement) is set as the offset △2, the offset △2 is calculated as △2=Xm-Xp and becomes △2=V‧t-Rp‧ sin(θp). The characteristic of the offset △2 is the same as the chart of the offset △2 in Fig. 8A. It can be compared with the previous ones by giving a slight difference between the moving speed V of the projection image surface Sm and the peripheral speed Vp of the exposure surface Sp. The embodiment similarly enlarges the exposure width of the projection area PA that can be used in scanning exposure. For this reason, it is necessary to make the speed (circumferential speed) of the surface with the smaller radius of curvature of the projection image surface Sm and the exposure surface Sp relatively larger. In this embodiment, the speed V (peripheral speed Vm) of the projection image surface Sm is smaller than the peripheral speed Vp of the exposure surface Sp, such as the rate of change α illustrated in FIG. 8C. When the scanning exposure of the mask MB The peripheral speed Vf is set to be slightly smaller than the reference speed V determined based on the projection magnification β.

Here, the formula of F(x) in the first embodiment is replaced with the formula of F'(x) below in the case of the exposure apparatus U3c of this embodiment.

Here, the exposure device U3c can obtain the same effect as the above-mentioned embodiments by applying this F'(x) to the formula of the previous first embodiment and satisfying this relationship.

In addition, in the exposure apparatus of this embodiment, among the mask holding mechanism and the substrate support mechanism, the curved surface holder is used as the first support member, and the curved surface or flat surface support is used as the second support member.

Although the cylindrical or planar mask M is used in each embodiment above, even if DMD (digital mirror element) or SLM (spatial light modulator) is controlled based on CAD data, the light distribution of the corresponding pattern is The same effect can also be obtained through the maskless exposure method projected on the exposure surface Sp through the projection optical system (which may also include a microlens array).

In addition, in each embodiment, the curvature radius of the projected image surface Sm of the pattern and the exposure surface Sp of the substrate P is compared. During scanning exposure, the peripheral speed of the surface Sm and the surface Sp of the smaller radius of curvature is made relatively To be slightly larger or to make the peripheral speed (or linear movement speed) of the surface Sm and the surface Sp with the larger radius of curvature relatively small, that is, the exposure width available for scanning exposure can be enlarged. As for the degree to which the relative peripheral speed (or linear movement speed) needs to be set, it can be changed according to the image displacement △ (difference component △, offset △1, △2) and resolution Rs. For example, in the previous evaluation method of the evaluation values Q1 and Q2 in FIG. 19, although the resolution Rs is set to 2.09μm, this is determined by the numerical aperture NA of the projection optical system PL, the exposure wavelength λ, and the process constant k . In fact, the minimum size (line width) of the pattern exposed on the substrate P depends on the pattern formed on the mask M and the projection magnification β. Assuming that the smallest actual size (width of the solid line) in the pattern for the display panel to be formed on the substrate P can be 5 μm, the value of the width of the solid line is set as the resolution Rs to obtain the allowable image change The difference in peripheral velocity (rate of change α, etc.) within the range of the position amount △ is sufficient. That is, the rate of change α of the peripheral velocity difference used to enlarge the exposure width can be determined based on the resolution Rs depending on the configuration (NA, λ) of the exposure device or the minimum size of the pattern to be transferred on the substrate P.

As mentioned above, the following scanning exposure method is implemented by using the exposure apparatus shown in each embodiment. That is, the pattern formed on one surface of the mask (M, MB) curved into a cylindrical shape with a predetermined radius of curvature is projected through the projection optical system PL (PLM) to a cylindrical or flat support The surface of the flexible substrate P (exposure surface Sp), and while moving the mask M along one of the curved surfaces at a predetermined speed, the substrate is moved at a predetermined speed along the substrate surface (Sp) supported in a cylindrical or planar shape. P moves, when scanning and exposing the projection image of the pattern formed by the projection optical system to the substrate, set the projection image of the pattern formed by the projection optical system in the best focus state as the radius of curvature of the projection image surface Sm as Rm( It also includes Rm=∞), the radius of curvature of the surface (exposure surface) Sp of the substrate P supported in a cylindrical or flat shape is set to Rp (also includes Rp=∞), and the mask (M, MB) The moving speed of the pattern image that moves along the projection image surface (Sm) is set to Vm. When the predetermined speed of Sp along the surface (exposure surface) of the substrate P is set to Vp, set it to Vm when Rm<Rp >Vp, set Vm<Vp when Rm>Rp.

[Fifth Embodiment]

Fig. 23 is a diagram showing the overall configuration of the exposure apparatus of the fifth embodiment. The processing device U3d is equivalent to the processing device U3 shown in FIGS. 1 and 2. Hereinafter, the processing device U3d is referred to as an exposure device U3d for description. This exposure device U3d has a mechanism for replacing the mask M. Since the exposure device U3d has the same structure as the aforementioned exposure device U3, the description of the common structure is omitted in principle.

In addition to the above-mentioned drive rollers R4 to R6, edge position controller EPC3, and alignment microscopes AM1 and AM2, the exposure device U3d also has a mask holding mechanism 11, a substrate support mechanism 12, an illumination optical system (illumination system) IL, and a projection Optical system PL, lower control device 16.

The lower control device 16 controls each part of the exposure device U3d and causes each part to perform processing. The lower control device 16 may be a part or all of the upper control device 5 of the component manufacturing system 1. In addition, the lower control device 16 may be another device that is controlled by the upper control device 5 and is different from the upper control device 5. The lower control device 16 includes, for example, a computer. In this embodiment, the lower control device 16 is connected to a reading device 17 that reads information related to the mask M from an information storage unit (such as a bar code, an IC tag capable of storing magnetic storage media or information) installed on the mask M. Measuring device 18 for measuring the shape, size and installation position of the mask M.

In addition, although the mask holding mechanism 11 uses the mask holding cylinder 21 to hold the cylindrical mask M (the mask pattern surface formed by the high reflection portion and the low reflection portion), it is not limited to this structure. The same in the first embodiment. In this embodiment, when the mask M or the cylindrical mask is referred to, it not only refers to the mask M, but also includes the mask holding cylinder 21 (the mask M and the mask holding cylinder 21 assembly).

The substrate supporting mechanism 12 supports the substrate P exposed by the light from the pattern of the mask M irradiated by the illumination light along a curved surface or plane. The substrate support cylinder 25 is formed into a cylindrical shape having an outer peripheral surface (circumferential surface) of a curvature radius Rfa centered on the second axis AX2 extending in the Y direction. Here, the first axis AX1 and the second axis AX2 are parallel to each other, and a plane that includes the first axis AX1 and the second axis AX2 and is parallel to both is referred to as the center plane CL. The center plane CL is a plane defined by two straight lines (in this example, the first axis AX1 and the second axis AX2). A part of the circumferential surface of the substrate supporting cylinder 25 is a supporting surface P2 for supporting the substrate P. In other words, the substrate support cylinder 25 is configured to transport the support substrate P by winding the substrate P on the support surface P2 thereof. As described above, the substrate support cylinder 25 has a curved surface (outer peripheral surface) curved at a certain radius (radius of curvature Rfa) from the second axis AX2 as the predetermined axis, and a portion of the substrate P is wound around the outer peripheral surface to form the second axis AX2 rotates as the center. The second drive unit 26 is connected to the lower-level control device 16 and rotates the substrate support cylinder 25 with the second axis AX2 as the rotation center axis.

A pair of air inversion rods ATB1 and ATB2 are respectively provided on the upstream side and the downstream side in the conveyance direction of the substrate P via the substrate support cylinder 25. A pair of air inversion rods ATB1 and ATB2 are provided on the surface side of the substrate P, and are arranged below the support surface P2 of the substrate support cylinder 25 in the vertical direction (Z direction). The pair of guide rollers 27 and 28 are provided on the upstream and downstream sides in the conveying direction of the substrate P via a pair of air inversion rods ATB1 and ATB2, respectively. A pair of guide rollers 27, 28, one of the guide roller 27 guides the substrate P transported from the drive roller R4 to the air inversion bar ATB1, and the other guide roller 28 will transport it from the air inversion bar ATB2 The substrate P is guided to the driving roller R5.

Therefore, the substrate support mechanism 12 guides the substrate P conveyed from the driving roller R4 to the air inversion rod ATB1 through the guide roller 27, and introduces the substrate P passed through the air inversion rod ATB1 into the substrate support cylinder 25. The substrate support mechanism 12 rotates the substrate support cylinder 25 by the second drive part 26, so that the substrate P introduced into the substrate support cylinder 25 is supported by the support surface P2 of the substrate support cylinder 25 while moving toward the air inversion rod ATB2 Transport. The substrate support mechanism 12 guides the substrate P conveyed to the air inversion lever ATB2 to the guide roller 28 by the air inversion lever ATB2, and guides the substrate P that has passed the guide roller 28 to the driving roller R5.

At this time, the lower control device 16 connected to the first driving portion 22 and the second driving portion 26 causes the cylindrical roller 21 and the substrate support cylinder 25 to rotate synchronously at a predetermined rotation speed ratio, thereby forming a surface of the mask M The image of the mask pattern on the mask surface P1 is continuously and repeatedly projected and exposed on the surface of the substrate P (the surface curved along the circumferential surface) wound on the supporting surface P2 of the substrate supporting cylinder 25.

As shown in FIG. 23, the exposure apparatus U3d is equipped with the alignment microscopes GS1, GS2 which detect the alignment mark etc. formed in the photomask M beforehand on the outer peripheral surface of the photomask M. In addition, the exposure device U3d has encoder heads EH1 and EH2 for detecting the rotation angle of the mask M and the mask holding cylinder 21, etc. These are arranged along the circumferential direction of the mask M (or the mask holding cylinder 21). Encoder heads EH1 and EH2 are, for example, mounted on both ends of the mask holding cylinder 21 in the direction of the first axis AX1, and the reading is engraved on a scale that rotates with the mask holding cylinder 21 about the first axis AX1. The scale on the outer peripheral surface of the disc SD (a grid pattern carved with a certain pitch in the circumferential direction). Furthermore, the exposure device U3d can be provided with a focal point measuring device that measures the minute displacement in the radial direction of the outer circumferential surface of the rotating mask M (mask surface P1) to detect the focus shift of the mask surface P1 relative to the projection optical system PL AFM and foreign matter inspection device CD that detects foreign matter attached to the mask surface P1. Although these can be arranged in any orientation around the outer peripheral surface of the mask M, they only need to be arranged in a direction that avoids the insertion and removal movement space of the mask M when the mask is replaced.

In addition, the scale reading position of the encoder head EH1 is set in the XZ plane orthogonal to the first axis AX1 to coincide with the circumferential center position of the odd-numbered illumination areas IR1, IR3, and IR5 on the mask M (Intersection Q1 in Fig. 5 or Fig. 7), the scale reading position of the encoder read head EH2 is set in the XZ plane to be consistent with the circumferential direction of the even-numbered illumination areas IR2, IR4, and IR6 on the mask M Central location. In addition, the scales measured by the encoder heads EH1 and EH2 may also be formed on the outer peripheral surface of both ends of the mask holding cylinder 21 (mask M) together with the mask pattern.

The exposure device U3d has not only alignment microscopes AM1, AM2 for detecting marks on the substrate P, etc., but also encoder heads EN1, EN2, EN3, EN4 for detecting the rotation angle of the substrate support cylinder 25, etc. These are arranged along the circumferential direction of the substrate support cylinder 25. Encoder heads EN1, EN2, EN3, EN4, for example, are mounted on both ends of the substrate support cylinder 25 in the direction of the second axis AX2, and the reading is engraved on the substrate support cylinder 25 that rotates on the second axis AX2. The scale on the outer circumferential surface of the scale disc or the outer circumferential surface of the substrate support cylinder 25 in the direction of the second axis AX2 (lattice pattern engraved at a certain pitch in the circumferential direction).

In addition, the scale reading position of the encoder read head EN1 is set in the XZ plane orthogonal to the second axis AX2 to coincide with the circumferential position of the observation field of view of the alignment microscope AM1, and the scale read of the encoder read head EN4 Take the position and set it to coincide with the circumferential position of the observation field of view of the alignment microscope AM2 in the XZ plane. Similarly, the scale reading position of the encoder read head EN2 is set to be consistent with the circumferential center position of the odd-numbered projection areas PA1, PA3, PA5 on the substrate P, and the scale reading position of the encoder read head EN3 is set They are aligned with the circumferential center positions of the even-numbered projection areas PA2, PA4, and PA6 on the substrate P.

Furthermore, as shown in FIG. 23, the exposure apparatus U3d is equipped with the replacement|exchange mechanism 150 for replacing the board|substrate P. The replacement mechanism 150 can replace the mask M held by the exposure device U3d with another mask M with the same curvature radius Rm, or with another mask M with a different curvature radius Rm. In the case of replacing the mask M with the same curvature radius Rm, the replacement mechanism 150 can only remove and replace the mask M from the mask holding cylinder 21, or the mask M together with the mask holding cylinder 21 Remove and replace from exposure unit U3d together. When replacing the mask M with a different radius of curvature Rm, the replacement mechanism 150 can remove and replace the mask M together with the mask holding cylinder 21 from the exposure device U3d. When the mask M and the mask holding cylinder 21 are integrated, the replacement mechanism 150 can also replace the two in one. The replacement mechanism 150 may have any structure as long as it can mount the mask M or the assembly of the mask M and the mask holding cylinder 21 to the exposure device U3d or detach it from the exposure device U3d.

The exposure device U3d is equipped with the replacement mechanism 150, so that the mask M with different diameters can be automatically installed to expose the mask pattern to the substrate P. Therefore, the device manufacturing system 1 equipped with the exposure device U3d can use a mask M of an appropriate diameter corresponding to the size of the manufactured device (display panel). As a result, the component manufacturing system 1 can suppress the generation of blank parts of the substrate P that are not used, suppress the waste of the substrate P, and reduce the manufacturing cost of the component. As mentioned above, the exposure device U3d equipped with the replacement mechanism 150 has a large degree of freedom in selecting the size of the component (display panel) manufactured by the component manufacturing system 1, so there is no need for excessive equipment investment such as the replacement of the exposure device itself. Advantages of effectively manufacturing display panels of different sizes.

When replacing the mask M with a different diameter, between the two masks M, the illumination beam EL1 and the mask M are projected by the difference in the curvature of the mask surface P1 and the position of the first axis AX1 in the Z direction. The relationship between the light beam EL2, the position of the illumination area IR on the mask M and the non-telecentric degree of the chief ray of the illumination beam EL1, etc., will vary between masks M with different diameters, or the encoder read head EN1, EH2 and the scale The positional relationship of the disc SD will be different.

Therefore, when the mask M of the exposure device U3d is replaced with a mask M with a different diameter, the image of the mask pattern formed on the mask surface P1 of the mask M is projected and exposed to the substrate P with a suitable image quality And in the case of the multi-lens method, the images of the mask patterns appearing in the multiple projection areas PA1~PA6 must be adjusted to each other with good precision to adjust the related mechanism in the exposure device U3d and the parts related to it .

In this embodiment, when replacing the mask M with a different diameter, for example, the lower control device 16 is used as a control unit (adjustment unit) for adjustment, and the various parts of the exposure device U3d, specifically, constitute the illumination optics Adjustment of the position of at least a part of the optical components of the system IL or the projection optical system PL or the switching of a part of the optical components to components with different characteristics. In this way, after the mask M is replaced, the exposure device U3d can appropriately and well expose the substrate P. That is, the exposure device U3d can well realize the exposure with a large degree of freedom of the size of the element, that is, the exposure using the mask M of different diameter sizes. Next, the outline of the steps of replacing the mask M used in the exposure device U3d with a mask M of a different diameter or a mask M of the same diameter and a specific example of adjustment of the exposure device U3d will be described.

Fig. 24 is a flowchart showing the steps when the photomask used in the exposure apparatus is replaced with another photomask. 25 is a diagram showing the relationship between the position of the field of view area on the mask side of the odd-numbered first projection optical system and the position of the field of view area on the mask side of the even-numbered second projection optical system. FIG. 26 is a perspective view showing a photomask with an information storage portion storing photomask information on the surface. Fig. 27 is a schematic diagram of an exposure condition setting table storing exposure conditions.

When the mask M used in the exposure device U3d is replaced with a mask M of a different diameter, in step S101, the lower control device 16 shown in FIG. 23 starts the replacement operation of the mask M. Specifically, the lower control device 16 drives the replacement mechanism 150 to remove the mask M currently mounted on the exposure device U3d, and then drives the replacement mechanism 150 to mount the replacement target mask M on the exposure device U3d. In this replacement, the replacement mechanism 150 removes the mask holding cylinder 21 with the mask M together with the shaft member as the first axis AX1, and installs the mask M and the mask holding cylinder 21 with different diameters on Exposure unit U3d. At this time, when the scale disc SD is mounted coaxially with the first axis AX1 at both ends of the mask holding cylinder 21, the scale disc SD can be replaced together with the scale disc SD.

In this embodiment, when replacing the mask M with a different diameter, the diameter of the mask M (mask surface P1) installed in the new exposure device U3d is changed on the rotation center axis of the mask holding cylinder 21, which is The shaft member support position of the first axis AX1 in the Z-axis direction. Therefore, the exposure device U3d has a mechanism capable of moving the bearing device that rotatably holds the mask holding cylinder 21 in the Z-axis direction.

This bearing device has bearings that are rotatably supported as shaft members of the first shaft AX1 protruding toward both ends of the mask holding cylinder 21 (contact type such as ball bearings, needle bearings, etc., or non-contact type such as air bearings) type). The contact type bearing is composed of an inner wheel fixed to the shaft member of the mask holding cylinder 21, an outer wheel fixed to the body side of the exposure device U3d, and balls or needles sandwiched between the inner and outer wheels.

In order to perform smooth mask replacement, it is preferable to set the contact type bearing outer wheel from the bearing on the main body side of the exposure device U3d when both the inner and outer wheels of the contact bearing are attached to the shaft member side of the mask holding cylinder 21 The structure of the device detached. In addition, the bearing device on the main body side of the exposure device U3d includes a Z drive mechanism that adjusts the tilt in the YZ plane so that the first axis AX1 (shaft member) and the second axis AX2 (Y axis) are parallel, and has an adjustment on the XY plane An X drive mechanism that is inclined to make the first axis AX1 (shaft member) parallel to the center plane.

FIG. 25 shows a state in which the mask M held by the mask holding cylinder 21 is replaced with the mask Ma held by the mask holding cylinder 21a having a smaller diameter. The radius of curvature of the mask M is Rm, and the radius of curvature of the mask Ma is Rma (Rma<Rm). The IRa in Fig. 25 is the field of view on the side of the mask M (equivalent to the field of view from the illumination of the first projection optical system PL1, the third projection optical system PL3, and the fifth projection optical system PL5 shown in Fig. 23). The illumination beam EL1 of the optical system IL irradiates the odd-numbered illumination areas IR1, IR3, IR5 of the mask M), and IRb is the second projection optical system (the second projection optical system PL2 and the fourth projection optical system shown in FIG. 23) System PL4 and the sixth projection optical system PL6) of the mask M side view area (equivalent to the illumination beam EL1 from the illumination optical system IL irradiating the even-numbered illumination areas IR2, IR4, IR6 of the mask M).

In this embodiment, it is preferable that the field of view area IRa of the first projection optical system in the Z axis direction and the field of view area IRb of the second projection optical system in the Z direction remain unchanged before and after the mask M is replaced with the mask Ma. . The Z axis direction is orthogonal to the rotation center axis (first axis AX1) of the mask M (mask holding cylinder 21) and the rotation center axis (second axis AX2) of the substrate support cylinder 25, and is along The direction of the center plane CL. By making the spatial arrangement relationship between the viewing area IRa and the viewing area IRb in the Z-axis direction unchanged before and after the replacement of the mask M, it is possible to adjust the illumination optical system IL and the projection optical system PL, and various measurement equipment ( The position adjustment of the encoder reading heads EH1, EH2, alignment microscopes GS1, GS2, etc., or the change of the parts related to these, are suppressed to the minimum.

Although this embodiment is based on the premise of the multi-lens method as shown in FIG. 23, it is to arrange a single or a plurality of patterns in the Y direction to project the pattern in the illumination area IR set at one position on the peripheral surface of the mask M to In the case of the exposure device of the projection optical system in the projection area PA, each center in the circumferential direction of the illumination area IR and the projection area PA can be arranged on the center plane CL. In this type of exposure device, when the mask M with a radius (radius of curvature) Rm is replaced with a mask Ma with a radius of Rma (Rma<Rm), it is only necessary to drive the bearing device in the Z direction to the rotation center (shaft member) of the mask Ma ) Displace the radius difference (Rma-Rm) in the Z direction.

However, in the multi-lens method of the present embodiment, since the field of view area IRa of the odd-numbered projection optical system (the object surface conjugated to the odd-numbered projection area PA) is located on the outer peripheral surface of the mask M and separated in the circumferential direction In one of the two places, the field of view area IRb of the even-numbered projection optical system (object plane conjugated to the even-numbered projection area PA) is located in the other of the two places, so even if the mask Ma is simply moved to the Z direction The position change radius difference (Rma-Rm), depending on the degree of the radius, may not get good focus accuracy (or good splicing position accuracy). Therefore, in this embodiment, the bearing device is driven in the Z direction so that the outer peripheral surface of the replaced cylindrical mask is correctly aligned with the field of view area IRa (object surface) of the odd-numbered projection optical system and the even-numbered projection optical system. Both the system's field of view area IRb (object plane).

In the above embodiment, the Z direction position of the cylindrical mask is changed according to the diameter of the cylindrical mask to be installed so that the field of view area IRa of the odd-numbered projection optical system (PL1, PL3, PL5) and the even-numbered projection The position of the visual field IRb of the optical system (PL2, PL4, PL6) in the exposure device (in each direction of XYZ) does not change. In this way, if the positions of the field of view regions IRa and IRb are kept unchanged, there is an advantage that there are fewer changes or adjustment positions on the device side of cylindrical masks with different diameters. However, in this case, a drive system such as a motor that rotates the cylindrical mask and an actuator that slightly moves in the XYZ direction also moves in the Z direction as a whole, which may also impair the stability of the drive system. Sex.

Therefore, in order to obtain the advantage of maintaining the stability of the drive system, the Z position (or X position) of the cylindrical mask in the exposure device can be changed without changing the Z position (or X position) of the cylindrical mask. The cylinder mask. In this way, in addition to the advantage of maintaining the stability of the drive system, the characteristic effect of only replacing the rotating shaft with a certain relative diameter and installing it on the outer hollow cylindrical mask (different outer peripheral surface radius) can be obtained. . In order to cope with this method, on the exposure device side, it is best to make the focus position adjustment of each projection optical system, the focus position adjustment of the cylindrical mask by various alignment sensors (microscope), and the field of view area IRa, IRb. And adjust the position adjustment of the detection field of view of the sensor to the XYZ direction, the adjustment of the tilt and convergence of the principal ray of the illumination beam EL1, or the odd number of projection optical systems (PL1, PL3, PL5) and the even number of projection optical systems ( PL2, PL4, PL6) interval adjustment, etc.

Next, in this embodiment, as shown in FIG. 23, the mask M (and the mask holding cylinder 21) is taken out from the bearing device by the replacement mechanism 150, and the separately prepared mask Ma (with a mask holding circle) The barrel 21a) is mounted on the bearing device. During the removal of the mask M and the installation of the mask Ma, if the focus measurement device AFM or the foreign object inspection device CD in FIG. 23 spatially interferes with a part of the mask or the replacement mechanism 150, these are temporarily retreated first. In addition, as shown in FIG. 23, the projection optical system PL and the illumination optical system IL are located in the -Z direction with respect to the bearing device supporting the first axis AX1, and the alignment microscopes GS1 and GS2 are located in the -X direction. The direction of the mask M or the mask Ma is +Z direction, +X direction or ±Y direction (the direction of the first axis AX1) relative to the bearing device.

After the mask M is replaced with a mask Ma with a different diameter, the process proceeds to step S102, and the lower control device 16 obtains information about the mask Ma installed in the exposure device U3d after the replacement (replacement mask information). Mask information after replacement, such as diameter, circumference, width, thickness and other dimensions, tolerances, pattern types, roundness, eccentricity, or flatness of the mask surface P1, and various specifications or correction values related to the mask, etc. .

Such information is stored in the information storage unit 19 provided on the surface of the mask holding cylinder 21a as shown in FIG. 26, for example. The information storage unit 19 is, for example, a barcode, a hologram, or an IC tag. In this embodiment, although the information storage unit 19 is provided on the surface of the mask holding cylinder 21a, it may be provided on the mask Ma together with the element pattern. In this embodiment, when it is referred to as a cylindrical mask surface, it also includes either the surface of the mask Ma and the surface of the mask holding cylinder 21a. In FIG. 26, although the information storage part 19 is provided on the cylindrical outer peripheral surface of the mask holding cylinder 21a, it may be provided on the end surface of the axial direction of the mask holding cylinder 21a.

The lower control device 16 obtains the post-replacement mask information read by the reading device 17 from the information storage unit 19. For the reading device 17, a barcode reader can be used when the information storage unit 19 is a barcode, and an IC tag reader can be used when it is an IC tag. The information storage unit 19 may also be a part of the mask Ma where information is written in advance.

The mask information after replacement may also be included in the exposure information related to the exposure conditions. The exposure information is information necessary for the exposure device U3d such as the information of the substrate P to be exposed, the scanning speed of the substrate P, and the power of the illumination beam EL1 when applying the exposure processing to the substrate P. In this embodiment, the replacement mask information is added to the exposure information, various adjustments and corrections are made, and the manufacturing method conditions and parameter settings of the device operation during exposure are set. The exposure information is, for example, stored in the exposure information storage table TBL shown in FIG. 27, and stored in the storage section of the lower control device 16 or the storage section of the upper control device 5. The lower control device 16 reads out the exposure information storage table TBL from the aforementioned storage unit to obtain the mask information after replacement. In addition, the mask information after replacement can also be input through the input device (keyboard or mouse, etc.) of the lower control device 16 or the upper control device 5. In this case, the lower control device 16 obtains the mask information after replacement from the aforementioned input device. After obtaining the post-replacement mask information, the lower control device 16 proceeds to step S103.

In step S103, the lower control device 16 collects or calculates data related to the necessary adjustment part of the exposure device U3d and the necessary conditions for adjustment according to the diameter of the replaced mask Ma. The parts that must be adjusted include, for example, the position of the mask M in the Z-axis direction, the illumination optical system IL, the projection optical system PL, the rotation speed of the mask M, the exposure width (the width of the illumination area IR in the circumferential direction), and the encoder The position or posture of the reading head EH1, EH2, the position or posture of the alignment microscope GS1, GS2, etc. In addition, in this embodiment, since the rotation center axis (first axis AX1a) of the mask Ma after replacement is displaced in the Z-axis direction from the rotation center position of the mask M before replacement, it is necessary to drive the mask Ma. The way in which the output shaft of the drive source (for example, a motor) can be connected to the shaft member of the mask Ma is first adjusted (displaced) in the installation position of the drive source in the exposure apparatus body in step S103. Therefore, the exposure device U3d has an adjustment section that can replace one of a plurality of masks with different diameters from each other, and is based on the installation of the mask holding mechanism 11 that rotates around the first axis AX1 as a predetermined axis. The diameter of the cover Ma is adjusted to at least the distance between the first axis AX1 and the substrate support mechanism. The adjustment section sets the distance between the outer peripheral surface of the photomask mounted on the photomask holding mechanism 11 and the substrate P supported by the substrate support mechanism within a predetermined allowable range.

As described above, in the present embodiment, the position of the illumination field of view IR in the Z-axis direction is unchanged before and after replacement with a mask Ma with a different diameter. Therefore, for example, in step S101, the lower control device 16 only replaces the mask Ma with a different diameter, and obtains the post-replacement mask information in step S102, and adjusts the position of the mask Ma in the Z-axis direction of the illumination field IR accordingly Control to the same position as before replacement. In addition, before replacing the mask Ma, the lower control device 16 obtains the information of the mask Ma from, for example, the exposure information storage table TBL, and uses this information to change the mask Ma in the Z-axis direction. The position of the illumination field of view IR is controlled to the same position as before the replacement. Next, an adjustment example of step S103 will be explained.

FIG. 28 is a diagram schematically showing the state of the illumination beam and the projection beam between masks with different diameters based on the previous FIG. 5. As mentioned above, before and after the replacement of the mask M, if the position of the illumination field of view IR in the Z-axis direction does not change, as shown in FIG. 25, the mask M and the mask maintain the rotation center axis of the cylinder 21, That is, the position of the first axis AX1 in the Z axis direction will change. Specifically, the rotation center axis AX1a of the mask Ma with a small diameter is closer to the rotation center axis AX2 of the substrate support cylinder 25 than the first axis AX1 of the mask M with a large diameter.

Even if the diameter of the mask Ma after replacement is smaller than that of the mask M before replacement, as shown in Fig. 28, the circumferential center of the illumination area IR on the mask Ma (mask surface P1a), that is, the intersection Q1, is at The absolute position in XYZ coordinates (the only position in the exposure device). Therefore, as shown in Fig. 28, while maintaining the illumination conditions of the illumination beam EL1 set for the mask M before replacement, that is, the principal rays of the illumination beam EL1 are directed to 1 of the radius (radius of curvature) Rm in the XZ plane. Under the condition that the point Q2 of /2 is inclined, when the illumination beam EL1 is irradiated on the small diameter mask Ma, the principal rays of the projection beam EL2a reflected by the illumination area IR on the mask Ma will shift from being parallel to each other It becomes a state diffused in the XZ plane, and the traveling direction is also shifted.

Therefore, the illumination light beam EL1 from the illumination optical system IL must be adjusted to be suitable for the illumination light beam EL1 of the mask Ma. Therefore, in step S103, the cylindrical lens 54 (refer to FIG. 4) of the illumination optical system IL is changed to a different power to adjust the state of the magnification telecentric so that the principal rays of the illumination light beam EL1 travel in the XZ plane The position of 1/2 of the radius Rma of the mask Ma converges. Furthermore, the deflection angle not shown in the figure is used to adjust the telecentric state of the axis of the intersection Q1 at the center of the field of view area IRa (illumination area IR) so that the extension of the chief ray of the illumination beam EL1 passing through the intersection Q1 will pass through the mask The state of the central axis AX1a of Ma.

In addition, the angle of the reflected light beam from the mask Ma, that is, the projection light beam EL2a is adjusted. In this case, the axis angle between the illumination beam EL1 and the projection beam EL2a (the angle of the chief ray in the XZ plane) changes due to the diameter of the mask Ma (the central position of the chief ray), so it can be in the common optical path, that is, the polarization beam splitter An off-angle beam (wedge-shaped beam in which the incident surface and the exit surface are not parallel) is arranged between the PBS and the mask Ma to adjust the angle of the projection light beam EL2a.

In addition, when only the angle of the projection light beam EL2a is adjusted, the polarization member of the projection optical system PL (for example, the first reflection surface P3 of the first deflection member 70 or the fourth reflection surface P6 of the second deflection member 80 may be adjusted ) Of the angle. In this way, when replacing the mask Ma with a different diameter (in this example, the diameter of the mask Ma after replacement is smaller than before replacement), the principal rays of the projection beam EL2a reflected on the mask Ma can be in XZ The in-plane light becomes parallel to each other. That is, for the replaced mask Ma with a different diameter, the illumination optical system IL also adjusts the illumination conditions of the illumination beam EL1 irradiated on the illuminating area IR on the reticle Ma so that the illuminating area IR of the reticle Ma is reflected The projection light beam EL2a becomes a telecentric state.

In the case of performing the aforementioned adjustment, for example, the illumination optical module ILM of the illumination optical system IL is attached with a lens replacement mechanism that replaces one of a plurality of cylindrical lenses 54 with different powers in the optical path. It is also possible to control the lens replacement mechanism to switch to the cylindrical lens 54 of the most suitable power by the command from the lower control device 16. At this time, the lower control device 16 switches the cylindrical lens 54 according to the diameter information of the replaced mask Ma. Moreover, the lower control device 16 can also be used to adjust the deflection angle between the aforementioned polarizing beam splitter PBS and the mask Ma or the angle of the polarizing member in the projection optical module PLM (and the angle in the XZ plane The actuator of position) adjusts the optical characteristics of the projection beam EL2a reflected on the mask Ma. In this case, the lower control device 16 adjusts the deflection angle or the angle of the polarizing member according to the diameter information of the replaced mask Ma. In addition, the replacement of the cylindrical lens 54 and the adjustment of the deflection angle can also be performed by the operator of the exposure device U3d.

Fig. 29 is a diagram showing the configuration change of the encoder reading head etc. when replacing with a mask with a different diameter. The adjustment in step S103 is to further adjust the encoder read heads EH1, EH2, aligning the microscope GS1, GS2, the focus measuring device AFM on the side of the mask M, and the foreign body inspection device CD for foreign body detection as necessary. As shown in FIG. 29, for example, when the mask M and the mask holding cylinder 21 having a radius (radius of curvature) Rm are replaced with the mask Ma and the mask holding cylinder 21a having a smaller diameter Rma, they are arranged in the light Encoder reading heads EH1, EH2, alignment microscopes GS1, GS2, focus measuring device AFM, and foreign body inspection device CD around the mask M need to be relocated around the reduced diameter mask Ma or adjust the posture. In this way, the position of the alignment mark on the mask Ma, the rotation angle of the mask Ma, etc. can be accurately measured.

In the example shown in FIG. 29, the alignment microscopes GS1, GS2, the focus measurement device AFM, and the foreign matter inspection device CD are relocated around the mask Ma whose diameter is reduced. In addition, the encoder heads EH1 and EH2 in this example are respectively arranged at the position of the field of view area IRa of the first projection optical system (odd number) and the field of view area IRb of the second projection optical system (even number) in the XZ plane. The location nearby. Therefore, after the mask is replaced, there is no need to significantly change the positions of the encoder read heads EH1 and EH2 in the XZ plane.

However, by replacing the mask Ma, the scale on the outer circumference of the scale disc SD read by the encoder heads EH1 and EH2 or the scale formed on the outer circumference of the mask holding cylinder 21a together with the mask Ma and The relative reading angle of each encoder head EH1 and EH2 will change. Therefore, the postures of the encoder heads EH1 and EH2 are adjusted to face the scale correctly. Specifically, the arrows N1 and N2 shown in FIG. 29 rotate (tilt) the respective heads EH1 and EH2 at their positions corresponding to the diameter of the scale surface. In this way, the rotation angle information of the mask Ma can be obtained with high precision.

When replacing the mask Ma, the mask Ma, the mask holding cylinder 21a and the scale disc SD can be replaced at the same time, the posture (tilt) of the encoder reading heads EH1 and EH2 can be adjusted, and the installation position can be adjusted. The scale may also be provided on the surface of the mask Ma or the outer peripheral surface of the mask holding cylinder 21a. When replacing the mask Ma, if the grid pitch in the circumferential direction of the scale read by the encoder heads EH1 and EH2 is different from that before the replacement, the lower control device 16 corrects the grid pitch and code of the scale after the replacement. Correspondence between the detected values of the EH1 and EH2 of the reader. Specifically, the one-time count of the digital counter of the encoder system is used as a conversion coefficient to correct the rotation angle of the mask Ma after replacement or the movement distance of the mask surface P1a in the circumferential direction.

The focus measurement device AFM and the foreign object inspection device CD can also be arranged on the rotation center axis (the first axis AX1 or the first axis AX1a) of the mask M or the mask Ma in the Z-axis direction as shown by the imaginary line in Fig. 29 Directly below and between the illumination field of view IRa of the first projection optical system and the illumination field of view IRb of the second projection optical system, the mask surface P1 or the mask surface P1a of the mask M or the mask Ma is detected from below. In this way, before and after the replacement of the mask Ma, the change in the distance from the focus measuring device AFM and the foreign object inspection device CD to the surface of the mask M or the surface of the mask Ma can be reduced. Therefore, it is possible to correspond with the correction of the optical system of the focal point measuring device AFM and the foreign body inspection device CD or the processing software. In this case, the installation positions of the focal point measuring device AFM and the foreign body inspection device CD may not be changed.

By replacing it with the mask Ma, the radius of curvature becomes smaller, so that there is a possibility that the defocus within the exposure width of the projection area PA (the scanning direction of the substrate P or the circumferential direction of the mask Ma) becomes larger. In this case, it is necessary to adjust the exposure width (including the inclined portion), the illuminance of the illumination optical system IL or the scanning speed (the rotation speed of the mask Ma and the feeding speed of the substrate P). These can be adjusted by adjusting the projection field diaphragm 63 or the lower control device 16 adjusting the light source output of the light source device 13 and the rotation of the mask holding cylinder 21a and the substrate supporting cylinder 25. In this case, it is preferable to change the exposure width, illuminance, and scanning speed together.

Furthermore, it is necessary to adjust the position of the projection area PA of the projection optical system PL, the relative positional relationship of the projection optical module PLM, and the magnification of the mask Ma in the rotation direction caused by the change in the circumference of the mask Ma. For example, the lower control device 16 can adjust the projection area PA or the projection area PA of the projection optical system PL by controlling the image shift optical member 65 or the magnification correction optical member 66 included in the projection optical module PLM of the projection optical system PL The magnification of the mask Ma in the rotation direction, etc.

In step S103, the adjustment of the position of the mask Ma in the Z-axis direction, the adjustment of the optical components of the illumination optical system IL, the adjustment of the optical components of the projection optical system PL, and the encoder reader EH1 are performed Mechanical adjustment such as EH2 adjustment. Among these adjustments, there are those that can be adjusted automatically (or semi-automatically) by the lower control device 16 and the adjustment drive mechanism, etc., and there are also those that can be adjusted manually by the operator of the exposure device U3d. In addition, in step S103, the lower control device 16 changes the control data (various parameters) for controlling the exposure device U3d based on the mask information or exposure information after the replacement.

In step S103, although the exposure device U3d is adjusted based on the post-replacement mask information obtained in step S102, the shape, size, and installation position of the mask Ma measured by the measuring device 18 shown in FIG. 23 can also be used as Replace the mask information, and adjust the exposure device U3d based on this information. In this case, for example, after the lower control device 16 is replaced with a mask Ma, various adjustments are made according to the mask Ma measured by the measuring device 18. In addition, for parts that must be adjusted or replaced by the operator, the lower-level control device 16 displays the parts that must be adjusted, for example, on a monitor to notify the operator. By adjusting the exposure device U3d according to the measured value of the replaced photomask Ma, the replaced photomask information such as temperature or humidity increased by environmental changes can be obtained, so that the exposure device U3d can be adjusted according to a more realistic state. In step S103, after the adjustment of the replacement to the mask Ma is completed, the process proceeds to step S104.

As mentioned above, after changing to masks of different diameters, there may be situations in which the characteristics of the related optical system, mechanism, and detection system in the exposure device change. In this embodiment, in order to confirm the characteristics or performance of the exposure device after the mask is replaced, a correction device as shown in FIG. 30 is provided. Figure 30 is a diagram of the calibration device. Fig. 31 is a diagram for explaining correction. In step S103, although the exposure device U3d is in a state suitable for the replaced photomask Ma, by performing calibration in step S104, the state of the exposure device U3d can be made more suitable for the replaced photomask Ma. The calibration system uses the calibration device 110 shown in FIG. 30. The correction in this embodiment is executed by the lower control device 16. The lower control device 16 uses the calibration device 110 to detect the first mark ALMM provided on the surface of the mask Ma held by the mask holding cylinder 21a as an adjustment mark and the first mark ALMM provided on the substrate support circle as shown in FIG. The surface of the cylinder 25 (the part of the substrate P supporting the substrate support cylinder 25) is a second mark ALMR as an adjustment mark. Next, the lower control device 16 adjusts the rotation speed of the illumination optical system IL, the projection optical system PL, the photomask Ma, the transport speed or magnification of the substrate P, etc., so that the relative position of the first mark ALMM and the second mark ALMR becomes a predetermined Positional relationship. Therefore, although step S104 of calibration is preferably performed before winding the substrate P around the substrate support cylinder 25, it is also possible as long as the substrate P has high transmittance and various patterns are not formed on the substrate P. The correction can be performed in a state where the substrate P is wound around the substrate support cylinder 25.

As shown in FIG. 30, the correction device 110 includes an imaging element (for example, CCD, CMOS) 111, a lens group 112, a mirror mirror 113, and a beam splitter 114. When the correction device 110 is a multi-lens method, it is provided corresponding to the respective illumination optical systems IL1 to IL6. When performing correction, the lower control device 16 arranges the beam splitter 114 of the correction device 110 in the optical path of the illumination beam EL1 between the illumination optical system IL and the polarization beam splitter PBS. When the correction is not performed, the beam splitter 114 is retreated from the optical path of the illumination beam EL1.

Since the sensitivity of the imaging element 111 is sufficiently high, the loss of optical power may not be considered. Therefore, the beam splitter 114 may be, for example, a semi-finished beam or the like. In addition, the correction device 110 can be miniaturized by making the beam splitter 114 enter and exit the optical path of the illumination light beam EL1 between the illumination optical system IL and the polarization beam splitter PBS.

As shown in FIG. 30, the light beam from the light source 115 for calibration is also incident from the side opposite to the side where the illumination light beam EL1 of the polarization beam splitter PBS for separating the illumination light beam EL1 and the projection light beam EL2a is incident. Methods. Furthermore, the light source 115 (light emitting part) for calibration may be arranged on the back side of the second mark ALMR of the substrate support cylinder 25, and the beam for calibration may be irradiated from the back side of the second mark ALMR to transmit the second mark ALMR The light transmitted through the projection optical system PL and the polarizing beam splitter PBS is projected on the mask surface P1a of the replaced mask Ma. In this case, the imaging element 111 of the calibration device 110 can back-project the image of the second mark ALMR of the substrate support cylinder 25 on the replaced mask Ma together with the first mark ALMM on the mask Ma.

The beam splitter 114 is arranged in the optical path of the illumination beam EL1 between the illumination optical system IL and the polarization beam splitter PBS, the image of the first mark ALMM from the mask Ma and the second mark ALMR from the substrate support cylinder 25 The image passes through the beam splitter 114 and is guided to the mirror mirror 113 of the correction device 110. After the light of each mark image reflected by the mirror mirror 113 passes through the lens group 112, it is incident on the photographic element 111 with a very short photographing time (sampling time) of 0.1~1 milliseconds and a high-speed shutter speed. . The lower control device 16 analyzes and outputs the image signal of the first mark ALMM and the image corresponding to the second mark ALMR output from the imaging element 111, and based on the result of the analysis and the reading head of each encoder at the time of shooting (sampling) The measured values of EH1, EH2, EN2, and EN3 are used to determine the relative positional relationship between the first mark ALMM and the second mark ALMR. The rotation speed of the illumination optical system IL, the projection optical system PL, the mask Ma, and the transport speed of the substrate P Or adjust the magnification so that the relative position of the two becomes a predetermined state.

As shown in Fig. 31, the first mark ALMM is arranged at a position where each illumination area IR (IR1 to IR6) corresponding to each illumination optical system IL (IL1 to IL6) overlaps with the center plane CL (each illumination area IR is in the Y direction The triangle at both ends). The second mark ALMR is arranged at a position where each projection area PA (PA1 to PA6) corresponding to each projection optical system PL (PL1 to PL6) overlaps with the center plane CL (the triangular part of each projection area PA at both ends in the Y direction) ). In the calibration, the calibration device 110 provided for each of the projection optical modules PLM receives the first row (odd number) and the second row (even number) in order across the center plane CL. Mark the image of ALMM and the second mark of ALMR.

As described above, in step S103, after the adjustment (mainly mechanical adjustment) by replacing the mask Ma is completed, the lower control device 16 uses the replaced mask Ma and the substrate support cylinder for transporting the substrate P Adjust the exposure device U3d so that the positional deviation between 25 is below the allowable range. As described above, the lower control device 16 adjusts the exposure device U3d using at least the image of the first mark ALMM and the image of the second mark ALMR. In this way, errors that cannot be completely corrected through mechanical adjustment can be further corrected based on the actual mark images obtained from the replaced mask Ma and the substrate support cylinder 25. As a result, the exposure device U3d can perform exposure using the replaced mask Ma with appropriate and good accuracy.

In the above example, after the mask is replaced, the exposure device U3d is mainly adjusted mechanically, but the adjustment after the mask is replaced is not limited to this. For example, when the difference in the diameter of the cylindrical mask that can be installed in the exposure device U3d is small, it can also be matched with the cylindrical mask with the smallest diameter among the cylindrical masks to determine the illumination optical system IL and projection optics first. The effective diameter of the system PL and the size of the polarizing beam splitter PBS can eliminate the need to adjust the angular characteristics of the illumination beam EL1. In this way, the adjustment work of the exposure device U3d can be simplified. In this embodiment, the masks that can be used by the exposure device U3d are classified into a plurality of groups for each diameter of the mask. The mask diameter can also be changed when the diameter of the mask is changed within the group and beyond the group. In this case, change the adjustment object or parts of the exposure device U3d.

Fig. 32 is a side view showing an example in which the photomask is rotatably supported using an air bearing. Fig. 33 is a perspective view showing an example in which the photomask is rotatably supported using an air bearing. The mask holding cylinder 21 holding the mask M may be rotatably supported at both ends by air bearings 160. The air bearing 160 is formed by arranging a plurality of support units 161 on the outer peripheral surface of the mask holding cylinder 21 in a ring shape. In addition, the air bearing 160 rotatably supports the mask holding cylinder 21 by blowing air from the inner peripheral surface of each support unit 161 to the outer peripheral surface of the mask holding cylinder 21. As described above, the air bearing 160 functions as a mask holding mechanism that mounts and supports a plurality of masks M with different diameters from each other so as to rotate around a predetermined axis (first axis AX1).

In the aforementioned step S103, the air bearing 160 replaces the supporting unit 161 based on the diameter of the replaced mask Ma. In addition, before and after the replacement, when the difference in the diameter (2×Rm) of the mask M is small, the position of each support unit 161 in the radial direction can also be adjusted to correspond to the mask M after replacement. In this way, when the exposure device U3d rotatably supports the mask M through the air bearing 160, the air bearing 160 functions as a bearing device on the main body of the exposure device U3d that can replaceably support masks with different diameters.

[Sixth Embodiment]

Fig. 34 is a diagram showing the overall configuration of the exposure apparatus of the sixth embodiment. The exposure device U3e will be described using FIG. 34. In order to avoid repetitive description, only the parts that are different from the foregoing embodiment are described, and the same components as the embodiment are given the same symbols as the embodiment for description. In addition, each configuration of the exposure apparatus U3d of the fifth embodiment can be applied to this embodiment.

Although the exposure device U3 of the embodiment uses a reflective mask that uses light from a reflective mask to become a projection beam, the exposure device U3e of this embodiment uses a transmissive mask that uses light from a transmission mask to become a projection beam. (Transmissive cylindrical mask) structure. In the exposure apparatus U3e, the mask holding mechanism 11e includes a mask holding cylinder 21e for holding the mask MA, a guide roller 93 for supporting the mask holding cylinder 21e, a driving roller 94 for driving the mask holding cylinder 21e, and a drive unit 96. Although not shown, the exposure device U3e is provided with a replacement mechanism 150 for replacing the substrate P as shown in FIG. 23.

The mask holding mechanism 11e is to install one of a plurality of masks MA having different diameters from each other so as to be replaceable, and to rotate around a predetermined axis (first axis AX1). The exposure device U3d has an adjustment part, which is to install one of a plurality of masks MA having different diameters from each other so that one of them can be replaced. The replacement is based on the light installed by the mask holding mechanism 11e that rotates around the first axis AX1 as the predetermined axis. The diameter of the cover MA is adjusted to at least the distance between the first axis AX1 and the substrate support mechanism. The adjustment part sets the distance between the outer peripheral surface of the mask MA mounted on the mask holding mechanism 11e and the substrate P supported by the substrate support mechanism within a predetermined allowable range.

The mask holding cylinder 21e is made of, for example, glass or quartz with a certain thickness, and its outer peripheral surface (cylindrical surface) forms the mask surface of the mask MA. That is, in this embodiment, the illuminated area on the mask MA is curved into a cylindrical surface with a certain curvature radius Rm from the center line. The part of the mask holding cylinder 21e that overlaps the pattern of the mask MA when viewed from the radial direction of the mask holding cylinder 21e, for example, the central part of the mask holding cylinder 21e other than both ends in the Y-axis direction has an impact on the illumination beam. Transparency. Arrange the lighting area on the mask MA on the mask surface.

The mask MA, for example, is made into a transmissive flat sheet mask with a pattern formed on one side of a long strip of ultra-thin glass plate (for example, 100~500μm in thickness) with a light-shielding layer such as chromium to make it follow the light The cover keeps the outer peripheral surface of the cylinder 21e curved, and is used in a state of being wound around (attached to) the outer peripheral surface. The mask MA has a pattern non-formation area where no pattern is formed, and is attached to the mask holding cylinder 21e in the pattern non-formation area. The mask MA can be detachably attached to the mask holding cylinder 21e. The mask MA is the same as the mask M of the embodiment. It can replace the mask holding cylinder 21e wound on the transparent cylindrical base material, and the mask holding cylinder 21e on the transparent cylindrical base material The outer peripheral surface is directly integrated with a mask pattern formed by forming a light shielding layer such as chrome. In this case, the mask holding cylinder 21e also functions as a supporting member of the mask pattern.

The guide roller 93 and the driving roller 94 extend in the Y-axis direction parallel to the central axis of the mask holding cylinder 21e. The guide roller 93 and the driving roller 94 are arranged to be able to rotate around an axis parallel to the rotation center axis of the mask MA and the mask holding cylinder 21e. Each of the guide roller 93 and the driving roller 94 has a larger outer diameter at the end in the axial direction than other parts, and this end is circumscribed to the mask holding cylinder 21e. As described above, the guide roller 93 and the driving roller 94 are provided so as not to contact the mask MA held by the mask holding cylinder 21e. The driving roller 94 is connected to the driving portion 96. As shown in FIG. The driving roller 94 transmits the torque supplied from the driving portion 96 to the mask holding cylinder 21e, so that the mask holding cylinder 21e rotates about its rotation center axis.

Although the mask holding mechanism 11e has one guide roller 93, the number is not limited, and it may be two or more. Similarly, although the mask holding mechanism 11e includes one drive roller 94, the number is not limited, and it may be two or more. At least one of the guide roller 93 and the driving roller 94 may be arranged inside the mask holding cylinder 21e, and inscribed with the mask holding cylinder 21e. In addition, the portion of the mask holding cylinder 21e that does not overlap with the pattern of the mask MA as viewed from the radial direction of the mask holding cylinder 21e (both ends in the Y-axis direction) may be transparent to the illumination beam, or not With light transmittance. In addition, one or both of the guide roller 93 and the drive roller 94 may have a truncated cone shape, for example, and the central axis (rotation axis) of the guide roller 93 and the drive roller 94 may be non-parallel to the central axis.

The exposure device U3e preferably arranges the field of view area (illumination area) IRa of the first projection optical system (illumination area) and the field of view area (illumination area) of the second projection optical system shown in FIG. 25 at the positions of the guide roller 93 and the driving roller 94, respectively IRb. In this way, even if the diameter of the mask MA changes, the positions of the viewing areas IRa and IRb in the Z-axis direction can be kept constant. As a result, when replacing the mask MA with a different diameter, the position adjustment of the viewing areas IRa and IRb in the Z-axis direction is easy.

The lighting device 13e of this embodiment includes a light source (not shown) and an illumination optical system (illumination system) ILe. The illumination optical system ILe is provided with a plurality of (for example, six) illumination optical systems ILe1 to ILe6 arranged in the Y-axis direction corresponding to each of the plurality of projection optical systems PL1 to PL6. As the light source, various light sources can be used in the same manner as the light source device 13 of the embodiment. The illumination light emitted from the light source is uniformized in illuminance distribution, and divided into a plurality of illumination optical systems ILe1~ILe6 through light guide members such as optical fibers.

Each of the plurality of illumination optical systems ILe1 to ILe6 includes a plurality of optical components such as lenses. Each of a plurality of illumination optical systems ILe1~ILe6, including, for example, an integrator optical system, a rod lens, or a fly-eye lens, etc., illuminates the illumination area of the mask MA with an illumination beam with a uniform illuminance distribution. In this embodiment, a plurality of illumination optical systems ILe1 to ILe6 are arranged inside the mask holding cylinder 21e. Each of the plurality of illumination optical systems ILe1 to ILe6 illuminates each illumination area on the mask MA held on the outer peripheral surface of the mask holding cylinder 21e through the mask holding cylinder 21e from the inside of the mask holding cylinder 21e.

The illuminating device 13e guides the light emitted from the light source through the illuminating optical systems ILe1 to ILe6, and irradiates the guided illuminating beam to the reticle MA from the inside of the reticle holding cylinder 21e. The illuminating device 13e illuminates a part (illumination area) of the mask MA held by the mask holding cylinder 21e with a uniform brightness by an illuminating beam. In addition, the light source may be arranged inside the mask holding cylinder 21e, or may be arranged outside the mask holding cylinder 21e. In addition, the light source may be a device (external device) different from the exposure device U3e.

The illumination optical systems ILe1~ILe6 irradiate the illuminating light beam extending into a slit shape in the direction of the first axis AX1, which is a predetermined axis, from the inner side of the mask MA to the outer peripheral surface. In addition, the exposure device U3e has an adjusting part that adjusts the width of the illumination beam in the rotation direction of the mask MA according to the diameter of the mounted mask MA.

The substrate support mechanism 12e of the exposure apparatus U3e includes a substrate stage 102 that holds a planar substrate P and a moving device (not shown) that scans and moves the substrate stage 102 in the X direction in a plane orthogonal to the center plane CL. Since the surface of the substrate P on the supporting surface P2 side shown in FIG. 34 is a plane substantially parallel to the XY plane, the principal rays and XY of the projection beam reflected from the mask MA and projected on the substrate P through the projection optical system PL The face is vertical. In the aforementioned step S104 calibration, the second mark ALMR shown in FIG. 31 is provided on the surface of the support surface P2 of the substrate stage 102.

Although the exposure device U3e uses a transmission type photomask as the photomask MA, in this case, it can be replaced with a photomask MA having a different diameter in the same way as the exposure device U3. Next, when replacing the mask MA with a different diameter, the exposure device U3e is the same as the exposure device U3. After adjusting at least one of the illumination optical systems ILe1 to ILe6 and the projection optical systems PL1 to PL6, adjust (set) to The relative positional relationship between the replaced mask MA and the substrate stage 102 for transporting the substrate P becomes an offset below the predetermined allowable range. In this way, it is possible to further precisely correct errors that cannot be completely corrected through mechanical adjustment based on the actual mark images obtained from the mask MA and the substrate stage 102 that transports the substrate P. As a result, the exposure device U3e can maintain appropriate and good accuracy, and perform exposure using the replaced mask.

In addition, instead of the substrate support mechanism 12 of the exposure apparatus U3 of the embodiment, the substrate support mechanism 12e of the exposure apparatus U3e of this embodiment may be applied to the exposure apparatus U3. In addition, in the exposure apparatus U3 of the embodiment, the substrate support cylinder 25 may be rotatably supported by the guide roller 93 and the driving roller 94, and the positions of the guide roller 93 and the driving roller 94 may be respectively arranged as shown in FIG. 1 The field of view area (illumination area) IRa of the projection optical system and the field of view area (illumination area) IRb of the second projection optical system. In this way, when replacing the mask MA with a different diameter, the position adjustment of each of the viewing areas IRa and IRb in the Z-axis direction is easy.

[The seventh embodiment]

Fig. 35 is a diagram showing the overall configuration of the exposure apparatus of the seventh embodiment. The exposure device U3f will be described using FIG. 35. In order to avoid repetitive description, only the parts that are different from the foregoing embodiment are described, and the same components as the embodiment are given the same symbols as the embodiment for description. In addition, each configuration of the exposure apparatus U3d of the fifth embodiment and the exposure apparatus U3e of the sixth embodiment can be applied to this embodiment.

The exposure device U3f is a substrate processing device that applies so-called proximity exposure to the substrate P. The exposure device U3f sets the gap (proximity gap) between the mask MA and the substrate supporting cylinder 25f to several μm to several tens of μm, and the illumination optical system ILc directly irradiates the illumination beam EL on the substrate P to perform non-contact exposure. The mask MA is provided on the surface of the mask holding cylinder 21f. The exposure apparatus U3f of this embodiment uses a transmission type mask in which the light transmitted through the mask MA becomes the projection light beam EL. In the exposure device U3f, the mask holding cylinder 21f is made of, for example, glass or quartz with a certain thickness, and its outer peripheral surface (cylindrical surface) forms the mask surface of the mask MA. Although not shown, the exposure device U3f has a replacement mechanism 150 for replacing the mask MA as shown in FIG. 23.

In the present embodiment, the substrate support cylinder 25f is rotated by a torque supplied from the second driving portion 26f including an actuator such as an electric motor. The mask holding cylinder 21f is driven by a pair of driving rollers MGG and MGG connected by a magnetic gear so as to rotate in the opposite direction to the rotation direction of the second driving portion 26f. The second driving portion 26f rotates the substrate support cylinder 25f, rotates the drive rollers MGG, MGG, and the mask holding cylinder 21f, and moves the mask holding cylinder 21f and the substrate support cylinder 25f in synchronization (synchronized rotation). Since a part of the substrate P passes through a pair of air inversion rods ATB1f, ATB2f and a pair of guide rollers 27f, 28f and is wound around the substrate support cylinder 25f, after the substrate support cylinder 25f rotates, the substrate P is connected to the mask holding cylinder 21f is transported simultaneously. As described above, the pair of driving rollers MGG and MGG function as a mask holding mechanism for mounting and supporting a plurality of masks M having different diameters from each other so as to rotate around a predetermined axis (first axis AX1).

The illumination optical system ILc is located at the position of the pair of driving rollers MGG and MGG, at the position closest to the substrate P supported by the substrate support cylinder 25f on the outer peripheral surface of the mask MA, and extends into a slit shape in the Y direction The illumination beam is projected from the inner side of the mask MA to the substrate P. In this proximity exposure method, the exposure position of the mask pattern on the substrate P (equivalent to the projection area PA) is one in the circumferential direction of the mask MA, so when replacing a cylindrical mask with a different diameter, just use The position of the support cylindrical mask in the Z-axis direction or the position of the substrate support cylinder 25f that supports the substrate P in the Z-axis direction may be adjusted so that the proximity gap is maintained at a predetermined value.

As described above, although the exposure device U3f uses a transmissive photomask as the photomask MA and applies proximity exposure to the substrate P, in this case, it can also be replaced with a photomask MA having a different diameter as in the exposure device U3. Then, when replacing the mask MA with a different diameter, the exposure device U3f can be adjusted to the position between the replaced mask MA and the substrate support cylinder 25f that transports the substrate P by performing the same calibration as the exposure device U3. The positional deviation (including the proximity gap) is within the predetermined allowable range. In this way, it is possible to further accurately correct errors that cannot be completely corrected through mechanical adjustment based on the actual mark image obtained from the mask MA and the substrate support cylinder 25f. As a result, the exposure device U3f can maintain appropriate and good accuracy for exposure.

In addition, the illumination optical system ILc of the exposure device U3f shown in Fig. 35 is only irradiated with a predetermined numerical aperture (NA) because it only irradiates a slender illuminating beam in the Y direction and a narrow width in the X direction (the rotation direction of the mask MA) It is on the mask surface of the mask MA, so even if the diameter of the cylindrical mask installed is different, it is not necessary to substantially adjust the alignment characteristics of the illumination beam from the illumination optical system ILc (the tilt of the chief ray, etc.). However, according to the diameter (radius) of the mask MA, a variable width can be set in the illumination optical system ILc in such a way that the width of the illumination beam irradiated on the mask surface in the X direction (rotation direction of the mask MA) can be changed. Illumination field diaphragm (variable blind), or a refractive optical system (for example, cylindrical zoom lens, etc.) that only reduces or enlarges the width of the illumination beam in the X direction (rotation direction of the mask MA).

In addition, although the exposure apparatus U3f in FIG. 35 supports the substrate P in a cylindrical surface shape by the substrate support cylinder 25f, it may be supported in a planar shape as shown in the exposure device U3e in FIG. 34. If the substrate P is supported in a planar shape, compared with the case where it is supported in a cylindrical shape, the width of the illumination beam corresponding to the difference in the diameter of the mask MA can be adjusted in the X direction (rotation direction of the mask MA). Larger. In this way, the width of the illumination beam in the X direction (rotation direction of the mask MA) can be adjusted to the optimum within the allowable range of the proximity gap corresponding to the diameter of the mask MA, enabling transfer to the substrate P The maintenance of pattern quality (loyalty, etc.) and the optimization of productivity. In this case, the variable blind, the cylindrical zoom lens, etc. are included in the adjustment part that can adjust the width of the illumination beam according to the diameter of the transmissive mask MA.

In the above embodiments, the diameter of the cylindrical mask that can be installed in the exposure device has a certain range. For example, in an exposure apparatus equipped with a projection optical system with a projection line width of about 2μm to 3μm, the focal depth DOF of the projection optical system is generally a narrow width of about several μm. The focus adjustment range is also narrow. For this type of exposure device, it is difficult to install a cylindrical mask with a diameter that changes from a predetermined diameter in millimeters. However, on the exposure device side, when the parts and mechanisms have a large adjustment range in a way that corresponds to the change in the diameter of the cylindrical mask from the beginning, the adjustment range can be considered and the cylinder that can be installed can be determined The diameter range of the mask. In addition, as for the exposure device of the proximity method as shown in Fig. 35, the gap between a part of the outer peripheral surface of the mask MA and the substrate P should be within a predetermined range, and as long as the support mechanism of the cylindrical mask can correspond to the structure, even if it is Cylindrical masks with diameters of 0.5 times, 1.5 times, 2 times, etc. can also be installed.

FIG. 36 is a perspective view showing a partial structure example of the support mechanism of the reflective cylindrical mask M in the exposure apparatus. In FIG. 36, although only the mechanism supporting the shaft member 21S protruding to one side in the direction (Y direction) in which the rotation axis AX1 of the cylindrical mask M (mask holding cylinder 21) extends is shown, it is also provided on the opposite side The same organization. In the case of Fig. 36, although the scale disc SD is integrated with the cylindrical mask M, it can also be engraved on both ends of the outer peripheral surface of the cylindrical mask M in the Y direction simultaneously with the formation of the element mask pattern The scale (grid) that can be read by the encoder head.

At the front end of the shaft member 21S, even if the mask M (mask holding cylinder 21) of different diameters is used, a cylindrical body 21K that is precisely processed with a certain diameter at any time is formed. This cylindrical body 21K is supported by a Z movable body 204 that can move in the up and down direction (Z direction) in a portion where a part of the frame (body) 200 of the exposure apparatus body is cut into a U shape. At the end of the U-shaped cutout portion of the frame 200 that extends in the Z direction, there are formed guide rail portions 201A, 201B that extend in the Z direction in a straight line facing each other at a predetermined interval in the X direction.

The Z movable body 204 is formed with a pad portion 204P recessed in a semicircular shape for supporting the lower half of the cylindrical body 21K with an air bearing, and slider portions 204A, 204B engaged with the rail portions 201A, 201B of the frame 200. The slider parts 204A and 204B are supported by bearings or air bearings that mechanically contact the rail parts 201A and 201B so as to be able to move smoothly in the Z direction.

The frame 200 is provided with a ball screw 203 that is pivotally supported to rotate around an axis parallel to the Z axis and a drive source (motor, reduction gear, etc.) 202 that rotates the ball screw 203. The nut portion screwed with the ball screw 203 is provided in the cam member 206 provided on the lower side of the Z movable body 204. Therefore, by the rotation of the ball screw 203, the cam member 206 linearly moves in the Z direction, whereby the Z movable body 204 also linearly moves in the Z direction. Although not shown in FIG. 36, the member supporting the front end of the ball screw 203 may also be provided with a guide member that does not displace the cam member 206 in the X direction or the Y direction but guides it to move in the Z direction.

The cam member 206 and the Z movable body 204 can also be fixed integrally, or they can be connected in the Z direction with a high-rigidity leaf spring or flexible member, etc., and in the X direction or Y direction with a low-rigidity leaf spring or flexible member, etc. link. Alternatively, a spherical seat may be formed on each of the upper surface of the cam member 206 and the lower surface of the Z movable body 204, and a steel ball may be arranged between the spherical seat. In this way, while supporting the cam member 206 and the Z movable body 204 with high rigidity in the Z direction, the relative slight tilt of the cam member 206 and the Z movable body 204 centered on the steel ball can be allowed. Furthermore, in the support mechanism of FIG. 36, between the Z movable body 204 and the frame 200, elastic support members 208A, 208B for supporting most of the weight of the cylindrical mask M (mask holding cylinder 21) are provided .

The elastic support members 208A, 208B are composed of air pistons whose lengths change by supplying compressed air to the inside, and are supported by air pressure to support a cylindrical mask M (mask holding cylinder 21) supported by a Z movable body 204 The load. When the cushion portion 204P of the Z movable body 204 supports the cylindrical body 21K as the rotation axis of the cylindrical mask M (mask holding cylinder 21), the cylindrical mask M (mask holding circle 21) with different diameters In cylinder 21), of course the self-weight is also different. Therefore, the pressure of the compressed gas supplied in the air piston as the elastic support members 208A and 208B is adjusted corresponding to its own weight. In this way, the load in the Z direction acting between the ball screw 203 and the nut portion of the cam member 206 can be greatly reduced. The ball screw 203 can also rotate with a very small torque, and the drive source 202 can also be made into a smaller size. Suppress the deformation of the frame 200 caused by heat.

Also, although it is not shown in Fig. 36, the position of the Z-direction of the Z movable body 204 is precisely measured by a rangefinder such as a linear encoder with a measurement and analysis capability of submicron or less, and is servo-controlled based on the measured value. Drive source 202. Furthermore, a load sensor for measuring the change in the load acting between the Z movable body 204 and the cam member 206 or a strain sensor for measuring the deformation caused by the Z-direction stress of the cam member 206 can also be provided, according to The measured values from each sensor are servo-controlled to control the pressure (gas supply and exhaust) of the compressed gas supplied to the air piston as the elastic support member 208A, 208B.

In addition, sometimes the cylindrical mask M (mask holding cylinder 21) is attached to the pad 204P of the Z movable body 204, and the height in the Z direction caused by the drive source 202 is set at a predetermined position, and then the illumination is performed During various adjustments or corrections of the optical system IL or the projection optical system PL or according to the result of the correction, the position of the cylindrical mask M (the mask holding cylinder 21) in the Z direction is slightly moved. The supporting mechanism including the Z movable body 204 of FIG. 36 is also provided on the shaft member on the opposite side of the cylindrical mask M (mask holding cylinder 21), by individually adjusting the respective Z movable bodies of the supporting mechanisms provided on both sides The Z direction position of 204 can also adjust the slight tilt of the rotation center axis AX1 relative to the XY plane. After the Z-direction position adjustment or tilt adjustment of the mounted cylindrical mask M (mask holding cylinder 21) is completed by the above method, the Z movable body 204 can also be mechanically clamped to the rail 201A, 201B (that is, rack 200).

If the maximum diameter of the cylindrical mask M (mask holding cylinder 21) that can be installed in the projection exposure device is set to DSa and the minimum diameter is set to DSb, the Z-direction movement of the Z movable body 204, (DSa- DSb)/2 is fine. For example, if the maximum diameter of the mountable cylindrical mask M (mask holding cylinder 21) is set to 300 mm and the minimum diameter is set to 240 mm, the moving stroke of the Z movable body 204 is 30 mm.

The cylindrical mask M with a diameter of 300mm means that compared to the cylindrical mask M with a diameter of 240mm, the pattern formation area of the mask M is expanded in the circumferential direction (scanning exposure direction) of the cylindrical mask by 60mm×π ≒188mm. As in the conventional scanning exposure device, when the flat mask is scanned and moved in a one-dimensional direction, the pattern formation area is expanded in the scanning direction, which will lead to the enlargement of the mask stage corresponding to the size of the flat mask over 180mm. And to increase the size of the body structure to expand the movement of the mask stage by more than 180mm. On the other hand, as shown in FIG. 36, only the Z movable body 204 supporting the rotation axis AX1 (shaft member 21S) of the cylindrical mask M (mask holding cylinder 21) can be precisely moved in the Z direction. , It can easily correspond to the enlargement of the pattern formation area of the photomask without enlarging the other parts of the device.

<Component Manufacturing Method>

Next, referring to Fig. 37, a method of manufacturing the element will be described. FIG. 37 is a flowchart showing the component manufacturing method of the component manufacturing system. This device manufacturing method can also be realized by any one of the first embodiment to the seventh embodiment.

In the device manufacturing method shown in FIG. 37, first, the function and performance design of a display panel formed using a self-luminous device such as organic EL is performed, and the required circuit patterns and wiring patterns are designed by CAD or the like (step S201). Next, according to various patterns of each layer designed by CAD or the like, a mask M of the required layer amount is produced (step S202). The supply roll FR1 on which the flexible substrate P (resin film, metal foil film, plastic, etc.) as the base material of the display panel is wound is prepared (step S203). In addition, the roll-shaped substrate P prepared in this step S203 may be one whose surface has been modified as necessary, or one that has been formed in advance (for example, micro-concave and convex through imprint method), or one that has been pre-laminated with light. Inductive functional film or transparent film (insulating material).

Next, on the substrate P, electrodes constituting the display panel elements or a backplane layer composed of wiring, insulating film, TFT (thin film semiconductor), etc. are formed, and a light-emitting element composed of self-luminous elements such as organic EL is formed by stacking on the substrate. Layer (display pixel portion) (step S204). In this step S204, although it includes the conventional lithography process of exposing the photoresist layer using the exposure device U3 described in the previous embodiments, it also includes the pattern of the substrate P coated with a photosensitive silane coupling agent instead of the photoresist Exposure comes from an exposure process that forms a water-repellent pattern on the surface, a wet process that exposes a photo-sensitive catalyst layer pattern and forms a metal film pattern (wiring, electrode, etc.) by electroless plating, or contains silver The processing of printing process, etc. for drawing patterns such as conductive ink of rice particles.

Then, cut the substrate P for each display panel element continuously manufactured on the long substrate P in a roll manner, or paste a protective film (environmental barrier layer) or color filter film on the surface of each display panel element. The components are assembled (step S205). Next, a step of checking whether the display panel element can operate normally or whether it meets the desired performance and characteristics is performed (step S206). Through the above method, a display panel (flexible display) can be manufactured.

The exposure apparatus of the foregoing embodiment and its modification examples are manufactured by assembling various sub-systems (including the constituent elements listed in the application scope of this application) in a manner that can maintain predetermined mechanical, electrical, and optical accuracy. In order to ensure these various precisions, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are adjusted to achieve electrical accuracy. Adjustment. The assembly process from various sub-systems to exposure devices includes mechanical connections, wiring connections for circuits, and piping connections for pneumatic circuits. Of course, before the assembly process from the various sub-systems to the exposure device, there are individual assembly processes for each sub-system. After the assembling process of the various sub-systems to the exposure device is completed, comprehensive adjustments are made to ensure the various accuracy of the entire exposure device. In addition, the manufacturing of the exposure device is preferably carried out in a clean room where temperature and cleanliness are managed.

In addition, the constituent elements of the above-mentioned embodiment and its modification examples can be appropriately combined. In addition, there are cases where some constituent elements are not used. Furthermore, it is possible to replace or change the constituent elements without departing from the scope of the present invention. In addition, within the scope of statutory regulations, all the publications and U.S. patents on exposure devices cited in the foregoing embodiments are cited as part of the description of this specification. As described above, other embodiments and application techniques performed by those with ordinary knowledge in the technical field to which the invention pertains based on the above embodiments are included in the scope of the present invention.

A‧‧‧moving distance

AX1’‧‧‧Centerline

AX2‧‧‧Central axis

Cp,Cp0‧‧‧Wiring

Cp1, Cp2‧‧‧point

HP‧‧‧Base surface

KS‧‧‧Noodles

Rm,Rp‧‧‧radius

Sm‧‧‧Projection image surface

Sp‧‧‧exposure

V‧‧‧Movement speed

2A‧‧‧Exposure width

PA‧‧‧Projection area

Claims (9)

A pattern exposure device that forms a photomask pattern on the outer peripheral surface curved at a first radius from the first axis while rotating a cylindrical photomask around the first axis, while arranging it in parallel with the first axis Starting from the second axis, the outer peripheral surface is bent at a second radius to rotate the rotating drum supported by bending the flexible substrate around the second axis, via a projection optical system arranged between the cylindrical mask and the rotating drum, Scanning and exposing the projection image of the mask pattern on the substrate, including: an illumination optical system for illuminating a rectangular illumination area with illumination light, so that the projection light beam generated from the illumination area is incident on the projection optical system, An image of the mask pattern is formed on the projection area on the substrate corresponding to the illumination area, and the rectangular illumination area is set to be long in the first axis direction on the outer peripheral surface of the cylindrical mask and The circumferential direction is short; and the driving unit sets the radius of the projection image surface in the best focus state formed by bending the projection beam on the image surface side of the projection optical system in the circumferential direction as Rm, and will rotate by the aforementioned The radius of the surface of the substrate on which the outer peripheral surface of the roller is curved in the circumferential direction and supported is set to Rp, and the peripheral speed of the projected image of the mask pattern moving in the circumferential direction along the projected image surface is set to Vm, And when the peripheral velocity of the surface of the aforementioned substrate moving in the circumferential direction is set to Vp, set it to Vm>Vp in the case of Rm<Rp, and set Vm<Vp in the case of Rm>Rp to control The rotation speed of the cylindrical mask and the rotating drum. The pattern exposure apparatus according to claim 1, wherein the projection magnification of the projection optical system is β, the circumferential velocity of the mask pattern on the cylindrical mask is Vf, and When the radius Rm is equal to the aforementioned radius Rp, and the relation between the aforementioned peripheral speed Vf and the aforementioned peripheral speed Vp determined by Vm=β‧Vf=Vp is used as the reference speed relation, the aforementioned drive unit is in the case of the aforementioned Rm<Rp , Regarding the aforementioned reference speed relationship, the rotation speed of the aforementioned cylindrical mask is set to increase. In the case of the aforementioned Rm>Rp, for the aforementioned reference speed The relationship is set in such a way that the rotation speed of the aforementioned cylindrical mask becomes smaller. The pattern exposure apparatus according to claim 2, wherein the driving section is configured to be between the image position in the circumferential direction on the projection image surface curved at the radius Rm and curved at the radius Rp during the scanning exposure The relative projection error in the scanning exposure direction of the position on the surface of the substrate in the circumferential direction becomes zero in three of the scanning exposure directions, and the ratio of the rotation speed of the cylindrical mask and the rotating drum is controlled ; Is set to: the three positions where the projection error is zero are included in the exposure width in the circumferential direction of the projection area set on the substrate. The pattern exposure apparatus according to claim 3, wherein the exposure width of the projection area is provided in the illumination optical system in an optically conjugate relationship with the mask pattern of the cylindrical mask The illumination field diaphragm is set by the projection field diaphragm provided in the projection optical system in an imaging relationship with the surface of the substrate. The pattern exposure apparatus according to claim 3 or 4, wherein when the position of 1/2 of the exposure width is set as the origin in the direction of the scanning exposure, the projection error is set as follows: The origin is set to zero. As it moves away from the origin to one side of the scanning exposure direction, it increases in the positive direction and then decreases to become zero. As it moves away from the origin to the other side of the scanning exposure direction Decrease in the negative direction and increase to become zero; the drive unit controls the ratio of the rotational speed of the cylindrical mask to the rotating drum in the following manner: the absolute value of the projection error is suppressed to be able to suppress the mask pattern The minimum line width of the pattern is faithfully transferred. The pattern exposure apparatus according to claim 1, wherein the exposure width in the scanning exposure direction of the projection area is set to ±A, and the angular velocity corresponding to the peripheral velocity Vm is set to ωm, which is equal to the peripheral velocity Vp The corresponding angular velocity is set to ωp, the number of openings of the projection optical system is set to NA, the exposure wavelength is set to λ, the process constant is set to k (less than 1), and the projection image surface and the surface of the substrate during the scanning exposure When the moving speed used as a reference is set to V, and the moving position within the width ±A of the aforementioned projection area is set to x, it is set to satisfy the following equation.

The pattern exposure apparatus according to claim 3 or 4, which is further provided with a supporting member, and one of the plurality of cylindrical masks with different first radii is replaceably mounted; according to the replacement of the supporting member The first radius of the rear cylindrical mask is set by the driving unit to set the ratio of the rotation speed of the replaced cylindrical mask to the rotating drum, or the exposure width. The pattern exposure apparatus according to any one of claims 1 to 4 and 6, wherein the projection optical system is arranged in a row in the direction in which the first axis or the second axis extends, and each The projection images of different parts of the mask pattern are projected onto the aforementioned substrate with the same composition of multiple projection optical modules; the aforementioned illumination optical system corresponds to each of the aforementioned multiple projection optical modules, and is used to set Each of the plurality of illumination areas on the mask pattern of the cylindrical mask is composed of a plurality of illumination optical modules that illuminate the illumination light; each of the plurality of projection optical modules is incident from the plurality of illumination areas Various The projection light beam corresponds to each of the plurality of illumination regions, and each of the plurality of projection regions set on the surface of the substrate forms a projection image of a different part of the mask pattern. The pattern exposure apparatus according to claim 8, wherein when the directions in which the plurality of projection optical modules extend on the first axis or the second axis are set to No. 1, No. 2..., odd numbers When viewed from the direction in which the first axis or the second axis extends, the projection optical module numbered and the projection optical module numbered even numbered are symmetrical across a center plane including the first axis and the second axis Arranged, and each of the plurality of illumination optical modules, when viewed from the direction in which the first axis or the second axis extends, corresponds to each of the odd-numbered and even-numbered projection optical modules, and is separated from the center It is arranged symmetrically.

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