TWI774214B - Power-on startup information reconstruction system and memory device startup information reconstruction method - Google Patents

Abstract

A power-on startup information reconstruction system and a memory device startup information reconstruction method are provided. The power-on startup information reconstruction system includes a memory device and an electronic device, wherein the electronic device includes initialization software to execute the memory device startup information reconstruction method. The memory device startup information reconstruction method comprises the following steps: the initialization software encodes the non-volatile memory bad block address data to generate electronic device coded data of bad block address; the initialization software writes a plurality of the electronic device coded data of the bad block address to non-volatile memory; the initialization software reads at least one data from the electronic device coded data of the bad block address from the non-volatile memory; the initialization software decodes the electronic device coded data of the bad block address being read, thereby restores the non-volatile memory bad block address data.

Description

Boot information reconstruction system and memory device boot information reconstruction method

The present invention relates to a boot information reconstruction system and a memory device boot information reconstruction method, and more particularly, to a method for protecting boot information using an error correction code with excellent error correction capability, and by collecting the damaged boot information The correctable part of the boot information can be combined into a complete boot information reconstruction system and memory device boot information reconstruction method.

Generally, a storage device (eg, a solid state drive) includes a controller and a non-volatile memory (eg, flash memory), where the non-volatile memory is used to store data. When memory manufacturers manufacture non-volatile memories, it is inevitable that some non-volatile memories do not meet the original specifications and are listed as downgrades. Therefore, before these degraded products are assembled into products, the card opening (initialization) step is required to obtain the addresses of all bad blocks in the non-volatile memory and record them in the boot information. middle. Boot-up information is usually an information block stored in non-volatile memory. However, during the SMT (Surface Mount Technology) production operation, the boot information is damaged or lost due to the high temperature environment of the reflow oven, and these degraded products are classified as defective products, thus affecting the company's performance. Profitable revenue.

Therefore, in order to solve the problem that the boot information in the non-volatile memory is damaged due to the high temperature environment when the degraded product of the non-volatile memory passes through the reflow oven, an embodiment of the present invention provides a memory A device boot information reconstruction method, suitable for a memory device and a card opening software, wherein the memory device includes a non-volatile memory, the non-volatile memory includes a plurality of damaged blocks, and the memory device boot information reconstruction method, including: ( a) The card opening software receives the data of the damaged block of the non-volatile memory, and encodes the data of the damaged block of the non-volatile memory with the electronic device error correction unit, so as to generate the electronic device of the damaged block address Encoded data; (b) the card opening software enables the memory device to write the electronic device encoded data of multiple damaged block addresses into the non-volatile memory; and (c) the card opening software uses the memory device to transfer from At least one piece of data of the electronic device encoding data of the damaged block addresses is read from the volatile memory, and the electronic device encoding data of the read damaged block addresses is decoded by the electronic device error correction unit, and then restored Non-volatile memory corrupts block address data.

In an embodiment of the present invention, wherein the non-volatile memory further includes a plurality of good blocks, the memory device activates the information reconstruction method, further comprising: (d) judging whether the non-volatile memory damaged block address data If the recovery is successful, if it is determined to be yes, generate user system data with the recovered non-volatile memory bad block address data, and cause the memory device to erase these good blocks of non-volatile memory; and (e) will The user system data is written into the system block of the memory device, wherein the system block is composed of at least one of the good blocks.

In an embodiment of the present invention, the memory device further includes a memory controller coupled to the non-volatile memory, wherein in the step (a), the step further includes: (a1) The card opening software receives the The non-volatile memory damaged block address data of the memory controller, and the electronic device error correction unit uses the high-level error correction code to encode the non-volatile memory damaged block address data to generate the damaged block Electronic device encoding data for the address.

In an embodiment of the present invention, in the step (d), the step further includes: (d1) if the judgment is no, judging whether the encoded data of the electronic device of the damaged block addresses have all been read, if If it is determined to be no, the steps (c) to (d) are repeated until all the encoded data of the electronic device of the damaged block addresses have been read.

In an embodiment of the present invention, in the step (d), the step further includes: (d2) the card opening software uses the electronic device error correction unit to use the low-level error correction code to damage the recovered non-volatile memory The block address data is encoded to generate user system data.

An embodiment of the present invention further provides a boot-up information reconstruction system, including: a memory device including a non-volatile memory, the non-volatile memory including a plurality of damaged blocks; and an electronic device coupled to the memory device, an electronic device The device includes a card-opening software to execute a memory device activation information reconstruction method, and the memory device activation information reconstruction method includes: (a) the card-opening software receives the data of the damaged block address of the non-volatile memory, and corrects the error by the electronic device The unit encodes the non-volatile memory damaged block address data, and generates the electronic device encoding data of the damaged block address; (b) the card opening software enables the memory device to write multiple electronic devices of the damaged block address The device encodes data into the non-volatile memory; and (c) the card opening software reads at least one piece of the electronic device encoded data of the damaged block address from the non-volatile memory by means of the memory device, and The electronic device code data of the read damaged block address is decoded by the electronic device error correction unit, so as to restore the damaged block address data of the non-volatile memory.

In the boot information reconstruction system and the memory device boot information reconstruction method provided by the embodiments of the present invention, before the memory device passes through the reflow oven, the electronic device error correction unit uses the high-level error correction code by the card opening software to correct the non- The damaged block address data of the volatile memory is encoded to generate the electronic device code data of the damaged block address, and a plurality of electronic device code data of the damaged block address are written into the non-volatile memory. After the memory device passes through the reflow oven, by collecting the electronic device code data of these damaged damaged block addresses, its correctable parts are combined or merged into a complete electronic device with damaged block addresses The encoded data is decoded by the error correction unit of the electronic device, and then the non-volatile memory damaged block address data is successfully recovered. In this way, when the memory device passes through the reflow oven, due to the high temperature environment, the encoded data of the electronic device of the damaged block address in the non-volatile memory will be damaged, and it cannot be recovered or reconstructed. The problem.

The above description is only an overview of the technical solutions of the present invention, in order to be able to understand the technical means of the present invention more clearly, it can be implemented according to the content of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and easy to understand , the following specific preferred embodiments, and in conjunction with the accompanying drawings, are described in detail as follows. In order to make the above-mentioned and other objects, features and advantages of the present invention more obvious and easy to understand, the following specific embodiments are given and described in detail in conjunction with the accompanying drawings.

FIG. 1 is a schematic diagram of a system structure of a boot-up information reconstruction system according to an embodiment of the present invention. As shown in FIG. 1 , the boot-up information reconstruction system 1 includes a memory device 10 and an electronic device 20 coupled to the memory device 10 . The memory device 10 includes a non-volatile memory 110 and a memory controller 120 coupled to the non-volatile memory 110, wherein the non-volatile memory 110 includes a plurality of damaged blocks and a plurality of good blocks ), wherein the good block is preferably a data block for storing data, and each data block includes a plurality of data pages. The memory device 10 is preferably a device for storing data, such as a solid-state drive or an SD (secure digital) memory card. The non-volatile memory 110 may be a data storage medium with long-term data storage, such as a flash memory (Flash Memory). The electronic device 20 includes a card opening software 210 , an electronic device error correction unit 220 and a processor 230 . The processor 230 is mainly used to control the electronic device error correction unit 220 or the memory device 10 or communicate with the memory device 10 according to the instructions or steps of the card opening software 210 to transmit or receive instructions/data, wherein processing The device 230 is coupled to the card opening software 210 and the error correction unit 220 of the electronic device. The electronic device 20 is preferably a computer or a flash drive.

When the memory device 10 is in the manufacturing stage, the memory manufacturer uses the electronic device 20 to open (initialize) the memory device 10 . Furthermore, the memory manufacturer loads and executes the card-opening software 210 to open the memory device 10 . Card opening mainly includes low-level initialization and high-level initialization. Low-level initialization mainly uses error-correction codes with excellent error-correction capabilities to protect boot-up information (including corrupt block record table), and copies this boot-up information into multiple entries and writes them to non-volatile in memory 110. After the memory device 10 passes through the reflow oven, the boot information may be damaged and become damaged boot information. High-level initialization mainly collects the correctable parts of these damaged boot information, and combines or merges the correctable parts to reconstruct a complete boot information, and then uses the general error correction ability. The error correction code is used to protect the restored boot information and write it to the non-volatile memory 110 .

Please refer to FIG. 1 and FIG. 2 at the same time. FIG. 2 is a schematic flowchart of a method for reconstructing boot information of a memory device according to an embodiment of the present invention. The electronic device 20 uses the card opening software 210 to execute the memory device activation information reconstruction method. The method for reconstructing boot information of a memory device includes the following steps: first, before passing through the reflow oven, as shown in step S100 , the card opening software 210 enables the memory controller 120 to scan or detect the non-volatile memory 110 to Each block in the non-volatile memory 110 is checked for damaged blocks. Once the memory controller 120 finds a damaged block, it will mark or record the information of the damaged block (eg, the address of the damaged block) in the non-volatile memory damaged block address data (ie, the damaged block record). Table), and transmits the non-volatile memory damaged block address data to the electronic device 20 or the card opening software 210, and the non-volatile memory damaged block address data, for example, stores all damaged non-volatile memory 110. The address of the block.

Next, as shown in step S110 , after the electronic device 20 or the card-opening software 210 receives the non-volatile memory damaged block address data, the processor 230 uses the electronic device error correction unit 220 (eg, an error correction codec) Use higher order error correction codes (ie, error correction codes with excellent error correction/error correction capabilities, such as LDPC codes (low density parity check codes)) to encode non-volatile memory corrupt block address data, To generate the encoded data of the electronic device (ie, the boot-up information) of the address of the first damaged block. Since higher-order error-correcting codes have more robust error-correcting capabilities than lower-order error-correcting codes (such as BCH codes with general error correction/error correction capabilities), the number of correctable error bits (bits) will be larger, For example, 1KB (kilobyte) of data can have 240 correction bits. Therefore, after the electronic device coding data of the damaged block address passes through the reflow oven, if the number of damaged bits does not exceed the correction capability of the high-level error correction code, the electronic device error correction unit 220 uses the high-level error correction code , the corrupted/wrong bits are corrected and the correction is successful. For example, if 240 bits of the encoded data of the electronic device of the damaged block address are damaged, since the number of damaged bits does not exceed the correction capability of the higher order error correction code, the correction can be successful. On the other hand, if the correction is performed by the low-level error correction code (for example, 1KB of data can correct only 72 bits), since the number of damaged bits has exceeded the ability of the low-level error correction code to correct, the correction cannot be successful. In this way, it is avoided that the number of damaged bits exceeds the correction capability of the error correction code.

Then, as shown in step S120 , the card opening software 210 enables the memory controller 120 to write the encoded data of the electronic device with the addresses of the damaged blocks into the non-volatile memory 110 . For example, the memory controller 120 can copy the electronic device encoded data of the first damaged block address in multiple (for example, 100) strokes, and write the electronic device encoded data of the damaged block address into One or more data pages of one or more data blocks in non-volatile memory 110 . Preferably, all available data blocks/data pages in the non-volatile memory 110 are filled. There is no limitation on the method of writing the data encoded by the electronic device to the address of the damaged block, and it can be continuous writing, non-sequential writing or random writing. However, since these writing methods belong to the scope of the prior art, here No longer.

Then, as shown in step S130 , after passing through the reflow oven, the card opening software 210 enables the memory controller 120 to read at least one piece of the electronic device encoding data of the damaged block addresses from the non-volatile memory 110 and make the processor 230 decode the read electronic device code data of the damaged block address through the electronic device error correction unit 220, and then restore or restore the non-volatile memory damaged block address data.

Next, as shown in step S140, the electronic device 20 or the card opening software 210 determines whether the recovery of the address data of the damaged block of the non-volatile memory is successful. If it is determined to be yes, the card opening software 210 uses the error correction unit 220 of the electronic device to use a low-level error correction code (ie, an error correction code with a general error correction/error correction capability, such as BCH code) for non-volatile memory of the reply The memory corrupted block address data is encoded to generate user system data (ie, the recovered boot-up information), and the memory controller 120 can erase the non-volatile memory corrupted block address data according to the recovered non-volatile memory corrupted block address data. All good blocks in the volatile memory 110 (as shown in step S150). For example, if the number of damaged bits in the encoded data of the electronic device of the read damaged block address does not exceed the correction capability of the high-level error correction code, the error correction unit 220 of the electronic device After decoding, the recovered non-volatile memory corrupted block address data can be successfully obtained, and then the recovered non-volatile memory corrupted block address data is encoded using a low-level error correction code to generate User system data.

If the judgment is no, the electronic device 20 or the card opening software 210 judges whether the electronic device code data of the damaged block addresses have been read. If the judgment is no, repeat steps S130 to S140 until all damaged block addresses until all the encoded data of the electronic device of the address have been read (as shown in step S160 ). For example, if a complete electronic device coding data of a damaged block address can be split into, for example, 10 parts, which are respectively stored in 10 different data pages. As long as the correctable parts (data pages that can be successfully corrected) of the electronic device coding data of the read damaged block addresses are collected and accumulated and stored until these 10 parts can be collected, The collected 10 parts (that is, the corresponding 10 data pages that can be successfully corrected) are combined or merged into a complete electronic device encoding data of the damaged block address. After that, the error correction unit 220 of the electronic device can decode it, and successfully obtain the recovered non-volatile memory damaged block address data.

In addition, after step S150, the card opening software 210 further includes enabling the memory device 10 to divide the non-volatile memory 110 into a system block and a user data block. The system block is preferably composed of some of these good blocks, such as the 1st data block to the Nth data block, and the user data block is preferably composed of some of these good blocks Other blocks are composed of, for example, the N+1th data block to the Mth data block, wherein N and M are positive integers.

Then, as shown in step S170 , the user system data is written into the system block of the non-volatile memory 110 . In this way, when the memory device 10 passes through the reflow oven, due to the high temperature environment, the encoded data of the electronic device with the damaged block address in the non-volatile memory 110 is prevented from being damaged and cannot be recovered. or rebuild problems.

To sum up, in the boot information reconstruction system and the memory device boot information reconstruction method provided by the embodiments of the present invention, before the memory device passes through the reflow oven, the error correction unit of the electronic device is made to detect high-level errors by the card opening software before the memory device passes through the reflow oven. The correction code encodes the damaged block address data of the non-volatile memory to generate the electronic device code data of the damaged block address, and writes multiple electronic device code data of the damaged block address to the non-volatile memory in memory. After the memory device passes through the reflow oven, by collecting the electronic device code data of these damaged damaged block addresses, its correctable parts are combined or merged into a complete electronic device with damaged block addresses The encoded data is decoded by the error correction unit of the electronic device, and then the non-volatile memory damaged block address data is successfully recovered. In this way, when the memory device passes through the reflow oven, due to the high temperature environment, the encoded data of the electronic device of the damaged block address in the non-volatile memory will be damaged, and it cannot be recovered or reconstructed. The problem.

Although the present invention has been disclosed as above with examples, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be determined by the scope of the appended patent application.

1: Boot up the information and rebuild the system 10: Memory device 110: Non-volatile memory 120: Memory Controller 20: Electronics 210: Card opening software 220: Electronic device error correction unit 230: Processor S100～S170: Steps

FIG. 1 is a schematic diagram of a system structure of a boot-up information reconstruction system according to an embodiment of the present invention. FIG. 2 is a schematic flowchart of a method for reconstructing boot information of a memory device according to an embodiment of the present invention.

S100～S170: Steps

Claims (10)

A method for reconstructing boot information of a memory device, suitable for a memory device and card opening software thereof, wherein the memory device includes a non-volatile memory and a memory controller, the non-volatile memory includes a plurality of damaged areas block, the memory device starts the information reconstruction method, including: (a) the card opening software causes the memory controller to scan or detect the non-volatile memory to check whether each block in the non-volatile memory is There is a damaged block, and a non-volatile memory damaged block address data is received, and an electronic device error correction unit is used to perform a high-level error code or a low-level error code on the non-volatile memory damaged block address data. encoding to generate an electronic device code data of a damaged block address; (b) the card opening software enables the memory device to write multiple electronic device code data of the damaged block address to one of the non-volatile memory one or more data pages of one or more data blocks; and (c) the card opening software reads the electronic device code of the addresses of the pen damaged blocks from the non-volatile memory through the memory device at least one piece of data, and the electronic device coded data of the read damaged block address is decoded by the electronic device error correction unit, so as to restore the non-volatile memory damaged block address data. The memory device activation information reconstruction method as claimed in claim 1, wherein the non-volatile memory further comprises a plurality of good blocks, the memory device activation information reconstruction method further comprises: (d) determining the non-volatile memory Whether the damaged block address data is restored successfully, if it is determined to be yes, generate a user system data with the restored non-volatile memory damaged block address data, and make the memory device erase the non-volatile memory those good blocks; and (e) writing the user system data into a system block of the memory device, wherein the system block is composed of at least one of the good blocks. The memory device activation information reconstruction method as claimed in claim 1, wherein the memory device further comprises a memory controller coupled to the non-volatile memory, wherein in the step (a), further comprising: (a1) The card opening software receives the address data of the non-volatile memory damaged block from the memory controller, and uses the electronic device error correction unit to use a high-level error correction code to update the non-volatile memory damaged block The block address data is encoded to generate the electronic device encoded data of the damaged block address. The memory device activation information reconstruction method according to claim 2, wherein in the step (d), further comprising: (d1) if the judgment is no, judging the electronic device code data of the damaged block addresses Whether the reading has been completed, if it is determined to be no, repeat steps (c) to (d) until all the encoded data of the electronic device of the damaged block addresses have been read. The memory device activation information reconstruction method according to claim 4, wherein in the step (d), further comprising: (d2) the card opening software uses a low-level error correction code with the electronic device error correction unit, The recovered non-volatile memory damaged block address data is encoded to generate the user system data. A boot-up information reconstruction system, comprising: a memory device including a non-volatile memory and a memory controller, the non-volatile memory including a plurality of damaged blocks; and An electronic device coupled to the memory device, the electronic device comprising a card opening software for executing a memory device activation information reconstruction method, the memory device activation information reconstruction method, comprising: (a) the card opening software enabling The memory controller scans or detects the non-volatile memory to check whether each block in the non-volatile memory has a damaged block, receives a damaged block address data of the non-volatile memory, and then uses An electronic device error correction unit encodes the non-volatile memory damaged block address data with a high-order error code or a low-order error code to generate an electronic device encoded data of the damaged block address; (b) the card opening software to cause the memory device to write a plurality of electronic device encoded data of damaged block addresses to one or more data pages of one or more data blocks in the non-volatile memory; and (c) the card opening software Through the memory device, read at least one piece of data of the electronic device encoding data of the damaged block addresses from the non-volatile memory, and use the electronic device error correction unit to read the damaged block The encoded data of the electronic device of the address is decoded, and then the address data of the damaged block of the non-volatile memory is recovered. The boot information reconstruction system of claim 6, wherein the non-volatile memory further includes a plurality of good blocks, and the memory device boot information reconstruction method further comprises: (d) judging the non-volatile memory damaged block Whether the address data is restored successfully, if it is determined to be yes, generate a user system data with the restored non-volatile memory damaged block address data, and make the memory device erase the non-volatile memory a good block; and (e) writing the user system data into a system block of the memory device, wherein the system block is composed of at least one of the good blocks. The boot information reconstruction system of claim 6, wherein the memory device further comprises a memory controller coupled to the non-volatile memory, wherein in the step (a), further comprising: (a1 ) The card opening software receives the address data of the non-volatile memory damaged block from the memory controller, and uses a high-level error correction code with the electronic device error correction unit to locate the non-volatile memory damaged block The address data is encoded to generate the electronic device encoded data of the damaged block address. The boot-up information reconstruction system according to claim 7, wherein in the step (d), the step further comprises: (d1) if the judgment is no, judging whether the electronic device code data of the damaged block addresses are all uniform After being read, if it is judged as NO, repeat steps (c) to (d) until all the encoded data of the electronic device of the damaged block addresses have been read. The boot-up information reconstruction system according to claim 9, wherein in the step (d), it further comprises: (d2) the card opening software uses a low-level error correction code with the electronic device error correction unit to The recovered non-volatile memory damaged block address data is encoded to generate the user system data.

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