TWI759963B - Plasma processing apparatus and heater thereof - Google Patents
Plasma processing apparatus and heater thereof Download PDFInfo
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- TWI759963B TWI759963B TW109140107A TW109140107A TWI759963B TW I759963 B TWI759963 B TW I759963B TW 109140107 A TW109140107 A TW 109140107A TW 109140107 A TW109140107 A TW 109140107A TW I759963 B TWI759963 B TW I759963B
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H—ELECTRICITY
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Abstract
本發明公開一種等離子處理裝置及其加熱器,加熱器設置在等離子處理裝置的絕緣材料窗上,加熱器包括第一子加熱器和第二子加熱器,第一子加熱器包括第一絕緣板和設置在第一絕緣板上方的第一加熱絲,第二子加熱器包括第二絕緣板和設置在第二絕緣板上的第二加熱絲;第一加熱絲與第二加熱絲以串聯方式連接於加熱電源,且加熱電源在第一加熱絲內産生的電流方向與在第二加熱絲産生的電流方向相反。高頻磁場穿過第一加熱絲産生的感應電流與穿過第二加熱絲時産生的感應電流正好能夠相互抵消,避免了加熱器所引起的射頻線圈功率損耗的問題。The invention discloses a plasma processing device and a heater thereof. The heater is arranged on an insulating material window of the plasma processing device. The heater includes a first sub-heater and a second sub-heater, and the first sub-heater includes a first insulating plate. and a first heating wire arranged above the first insulating plate, the second sub-heater includes a second insulating plate and a second heating wire arranged on the second insulating plate; the first heating wire and the second heating wire are connected in series It is connected to a heating power source, and the current direction generated by the heating power source in the first heating wire is opposite to the current direction generated by the second heating wire. The induced current generated by the high-frequency magnetic field passing through the first heating wire and the induced current generated when passing through the second heating wire can just cancel each other out, thereby avoiding the problem of power loss of the radio frequency coil caused by the heater.
Description
本發明涉及蝕刻技術領域,尤其涉及一種等離子處理裝置及其加熱器。The present invention relates to the technical field of etching, and in particular, to a plasma processing device and a heater thereof.
隨著半導體製造製程的發展,對元件的集成度和性能要求越來越高,等離子製程被廣泛應用於半導體器件的製造中。其中主要的等離子處理裝置包括電容耦合型(CCP)和電感耦合型(ICP)兩種,其中電感耦合型的等離子處理裝置具有等離子濃度高,刻蝕速率快等優點,目前被廣泛應用。With the development of semiconductor manufacturing process, the requirements for the integration and performance of components are getting higher and higher, and the plasma process is widely used in the manufacture of semiconductor devices. The main plasma processing devices include capacitive coupling (CCP) and inductive coupling (ICP). The inductive coupling plasma processing device has the advantages of high plasma concentration and fast etching rate, and is currently widely used.
對於等離子處理裝置而言,其結構主要包括一個反應腔,所述反應腔的頂部設置有絕緣材料窗,所述反應腔內下方設置有基座,所述基座用於放置待處理基片,一個低頻射頻電源藉由一個匹配器連接到基座,絕緣材料窗上表面還包括加熱線圈,該加熱線圈用於控制絕緣材料窗的溫度,因爲絕緣材料窗的溫度不同會影響反應腔內反應進行速度的均一性,絕緣材料窗上的溫度梯度太大時甚至會造成絕緣材料窗的開裂破損。加熱線圈藉由導線連接到一個加熱電源。所述加熱線圈上方設置有至少一個感應線圈,感應線圈藉由與高頻射頻電源連接。高頻射頻功率被施加到感應線圈産生了高頻磁場,這些高頻磁場向下穿過加熱線圈和絕緣材料窗進入反應腔內,高頻磁場感應産生高頻電場,高頻電場激發反應腔的反應氣體産生並維持需要的等離子體。For the plasma processing device, its structure mainly includes a reaction chamber, the top of the reaction chamber is provided with an insulating material window, and the bottom of the reaction chamber is provided with a base, and the base is used to place the substrate to be processed, A low-frequency radio frequency power supply is connected to the base through a matching device, and the upper surface of the insulating material window also includes a heating coil, which is used to control the temperature of the insulating material window, because the temperature of the insulating material window will affect the reaction in the reaction chamber. The uniformity of the speed and the temperature gradient on the insulating material window may even cause cracking and damage of the insulating material window. The heating coil is wired to a heating power source. At least one induction coil is arranged above the heating coil, and the induction coil is connected with a high-frequency radio frequency power supply. High-frequency radio frequency power is applied to the induction coil to generate a high-frequency magnetic field. These high-frequency magnetic fields pass down the heating coil and the insulating material window and enter the reaction chamber. The high-frequency magnetic field induces a high-frequency electric field, and the high-frequency electric field excites the reaction chamber. The reactive gases generate and maintain the desired plasma.
這些高頻磁場不僅能在反應腔內産生感應電場,也會在加熱線圈內感應産生感應電流,由於這些加熱線圈産生了感應電流,會消耗一定的能量,從而會對感應線圈(射頻線圈)的功率造成損耗。These high-frequency magnetic fields can not only generate an induced electric field in the reaction chamber, but also induce an induced current in the heating coil. Since these heating coils generate an induced current, they will consume a certain amount of energy, which will affect the induction coil (radio frequency coil). power loss.
綜上所述,如何解决減少射頻功率的損耗的問題已經成爲本領域技術人員亟需解决的技術難題。To sum up, how to solve the problem of reducing the loss of radio frequency power has become a technical problem that those skilled in the art need to solve urgently.
本發明的目的是提供一種等離子處理裝置及其加熱器,以解决減少射頻功率的損耗的問題。The purpose of the present invention is to provide a plasma processing device and a heater thereof to solve the problem of reducing the loss of radio frequency power.
爲了實現上述目的,本發明提供了一種等離子處理裝置的加熱器,所述加熱器設置在等離子處理裝置的絕緣材料窗上,所述加熱器包括第一子加熱器和第二子加熱器,所述第一子加熱器包括第一絕緣板和設置在所述第一絕緣板上方的第一加熱絲,所述第二子加熱器包括第二絕緣板和設置在所述第二絕緣板上的第二加熱絲;In order to achieve the above object, the present invention provides a heater of a plasma processing device, the heater is arranged on an insulating material window of the plasma processing device, the heater includes a first sub-heater and a second sub-heater, so The first sub-heater includes a first insulating plate and a first heating wire disposed above the first insulating plate, and the second sub-heater includes a second insulating plate and a heating wire disposed on the second insulating plate. the second heating wire;
所述第一加熱絲與所述第二加熱絲的形狀相同且上下對準排布,所述第一加熱絲與所述第二加熱絲以相互串聯的方式連接於加熱電源,且所述加熱電源在所述第一加熱絲産生的電流方向與所述加熱電源在所述第二加熱絲産生的電流方向相反。The first heating wire and the second heating wire have the same shape and are aligned up and down, the first heating wire and the second heating wire are connected to a heating power source in series with each other, and the heating The direction of the current generated by the power source at the first heating wire is opposite to the direction of the current generated by the heating power source at the second heating wire.
較佳地,所述第一絕緣板和所述第二絕緣板均爲陶瓷板。Preferably, both the first insulating plate and the second insulating plate are ceramic plates.
較佳地,所述加熱器的數量爲多個,且爲同軸疊布。Preferably, the number of the heaters is multiple, and the heaters are coaxially stacked.
較佳地,多個所述加熱器並聯或串聯於同一個加熱電源上。Preferably, a plurality of the heaters are connected in parallel or in series on the same heating power source.
較佳地,所述第一加熱絲和所述第二加熱絲均爲平面螺旋形。Preferably, the first heating wire and the second heating wire are both flat and spiral.
較佳地,所述加熱電源爲交流加熱電源。Preferably, the heating power source is an AC heating power source.
較佳地,所述第一加熱絲藉由導熱膠黏結的方式固定在所述第一絕緣板上。Preferably, the first heating wire is fixed on the first insulating plate by means of thermally conductive adhesive.
較佳地,所述第二加熱絲藉由導熱膠黏結的方式固定在所述第二絕緣板上。Preferably, the second heating wire is fixed on the second insulating plate by means of thermally conductive adhesive.
較佳地,所述第一子加熱器與所述第二子加熱器藉由導熱膠固定連接。Preferably, the first sub-heater and the second sub-heater are fixedly connected by thermally conductive glue.
相比於先前技術介紹內容,上述等離子處理裝置的加熱器設置在等離子處理裝置的絕緣材料窗上,加熱器包括第一子加熱器和第二子加熱器,第一子加熱器包括第一絕緣板和設置在第一絕緣板上方的第一加熱絲,第二子加熱器包括第二絕緣板和設置在第二絕緣板上的第二加熱絲;第一加熱絲與第二加熱絲的形狀完全相同且同軸疊布,第一加熱絲與第二加熱絲以相互串聯的方式連接於加熱電源,且加熱電源在第一加熱絲內産生的電流環向與加熱電源在第二加熱絲産生的電流環向相反。藉由在等離子處理裝置設置上述加熱器,使得在實際工作過程中,由於加熱器的第一加熱絲和第二加熱絲爲形狀相同且上下對準準排布,並且以相互串聯的方式連接於加熱電源,同時加熱電源在第一加熱絲上産生的電流方向與在第二加熱絲上産生的電流方向相反,也即,同一方向的電流在流經第一加熱絲和第二加熱絲時,在第一加熱絲的電流方向與在第二加熱絲的電流方向相反,而且由於第一加熱絲與第二加熱絲的形狀相同,因此,當射頻線圈産生的高頻磁場穿過第一加熱絲和第二加熱絲時,第一加熱絲與第二加熱絲所構成的閉環的磁通量接近於零,並且高頻磁場穿過第一加熱絲産生的感應電流與穿過第二加熱絲時産生的感應電流正好能夠相互抵消。從而有效地避免了加熱器所引起的射頻線圈功率損耗的問題。此外,藉由在第一加熱絲下方和第二加熱絲的下方均設置絕緣板的結構,能夠有效的避免第一加熱絲與第二加熱絲之間産生電弧的風險,同時還有助於提升加熱器的加熱均勻性。其中,均勻性主要體現在兩層子加熱器固定連接,一般可選擇導熱膠黏貼,整體的加熱器設置在整個絕緣窗中間,對整體加熱的效果會更好;而藉由設置兩層子加熱器的結構,移除了單個加熱器上加熱絲排布間隔不能過大的限制,所以同時減少了加熱絲排布過密産生電弧的風險。因爲單個加熱器只有藉由排布細密才能減少閉環磁通量的面積,而排布過密有産生電弧的風險。Compared with the content introduced in the prior art, the heater of the above-mentioned plasma processing apparatus is arranged on the insulating material window of the plasma processing apparatus, and the heater includes a first sub-heater and a second sub-heater, and the first sub-heater includes a first insulating material. plate and a first heating wire arranged above the first insulating plate, the second sub-heater includes a second insulating plate and a second heating wire arranged on the second insulating plate; the shapes of the first heating wire and the second heating wire The first heating wire and the second heating wire are connected to the heating power source in series with each other, and the current loop generated by the heating power source in the first heating wire is the same as the current generated by the heating power source in the second heating wire. The current circulates in the opposite direction. By arranging the above-mentioned heater in the plasma processing device, in the actual working process, since the first heating wire and the second heating wire of the heater have the same shape and are aligned up and down, they are connected to each other in series. Heating the power supply, and the current direction generated by the heating power supply on the first heating wire is opposite to the current direction generated on the second heating wire, that is, when the current in the same direction flows through the first heating wire and the second heating wire, The current direction of the first heating wire is opposite to the current direction of the second heating wire, and since the shape of the first heating wire and the second heating wire are the same, when the high-frequency magnetic field generated by the radio frequency coil passes through the first heating wire When it is connected to the second heating wire, the magnetic flux of the closed loop formed by the first heating wire and the second heating wire is close to zero, and the induced current generated by the high-frequency magnetic field passing through the first heating wire is different from that generated when passing through the second heating wire. The induced currents just cancel each other out. Thus, the problem of power loss of the radio frequency coil caused by the heater is effectively avoided. In addition, with the structure of disposing insulating plates under the first heating wire and under the second heating wire, the risk of arcing between the first heating wire and the second heating wire can be effectively avoided, and at the same time, it is helpful to improve the The heating uniformity of the heater. Among them, the uniformity is mainly reflected in the fixed connection of the two-layer sub-heater. Generally, a thermally conductive adhesive can be selected. The overall heater is arranged in the middle of the entire insulating window, and the overall heating effect will be better. By setting two layers of sub-heating The structure of the heater removes the restriction that the spacing of heating wires on a single heater cannot be too large, so at the same time, the risk of arcing caused by too dense heating wires is reduced. Because a single heater can only reduce the area of the closed-loop magnetic flux by arranging it closely, and arranging too densely has the risk of arcing.
另外,本發明還提供了一種等離子處理裝置,包括加熱器結構,並且該加熱器結構爲上述任一手段所描述的加熱器結構。由於上述加熱器結構具有上述技術效果,因此具有上述加熱器結構的等離子處理裝置也應具有相應的技術效果,在此不再贅述。In addition, the present invention also provides a plasma processing apparatus, comprising a heater structure, and the heater structure is the heater structure described in any of the above means. Since the above-mentioned heater structure has the above-mentioned technical effect, the plasma processing apparatus having the above-mentioned heater structure should also have the corresponding technical effect, which will not be repeated here.
此外,本發明還提供了一種等離子處理裝置的加熱器,所述加熱器設置在等離子處理裝置的絕緣材料窗中,加熱器包括第一加熱絲和第二加熱絲,第一加熱絲和第二加熱絲形狀相同且上下間隔預設距離對準排布,第一加熱絲與第二加熱絲以相互串聯的方式連接於加熱電源,且加熱電源在第一加熱絲內産生的電流方向,與加熱電源在第二加熱絲內産生的電流方向相反。In addition, the present invention also provides a heater for a plasma processing device, the heater is arranged in an insulating material window of the plasma processing device, the heater includes a first heating wire and a second heating wire, the first heating wire and the second heating wire The heating wires have the same shape and are aligned with a preset distance up and down. The first heating wire and the second heating wire are connected to the heating power supply in series with each other, and the current direction generated by the heating power supply in the first heating wire is related to the heating power. The current produced by the power source in the second heating wire is in the opposite direction.
藉由將加熱器設置在等離子處理裝置的絕緣材料窗中,具體是指加熱器採用全部或者部分嵌入絕緣材料窗內,例如其中絕緣材料窗中埋了一層加熱絲在整個絕緣窗中間,另一層加熱絲設置在絕緣材料窗的頂面。這樣布置使得整體加熱的均勻性效果會更好。By arranging the heater in the insulating material window of the plasma processing device, it means that the heater is completely or partially embedded in the insulating material window, for example, a layer of heating wire is buried in the insulating material window in the middle of the entire insulating window, and another layer is embedded in the insulating material window. The heating wire is arranged on the top surface of the insulating material window. This arrangement makes the overall heating uniformity effect better.
本發明的核心是提供一種等離子處理裝置及其加熱器,以解决減少射頻功率的損耗的問題。The core of the present invention is to provide a plasma processing device and a heater thereof to solve the problem of reducing the loss of radio frequency power.
爲了使本領域的技術人員更好地理解本發明提供的技術手段,下面將結合附圖和具體實施例對本發明作進一步的詳細說明。In order to make those skilled in the art better understand the technical means provided by the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.
如第1圖和第2圖所示,本發明實施例提供的一種等離子處理裝置的加熱器結構,包括設置在等離子處理裝置的絕緣材料窗上的加熱器1,加熱器1包括第一子加熱器11和第二子加熱器12,第一子加熱器11包括第一絕緣板111和設置在第一絕緣板111上方的第一加熱絲112,第二子加熱器12包括第二絕緣板121和設置在第二絕緣板121上的第二加熱絲122;第一加熱絲112與第二加熱絲122的形狀相同且上下對準排布,第一加熱絲112與第二加熱絲122以相互串聯的方式連接於加熱電源2,且加熱電源2在第一加熱絲112産生的電流方向與加熱電源2在第二加熱絲122産生的電流方向相反。As shown in Figures 1 and 2, a heater structure of a plasma processing apparatus provided by an embodiment of the present invention includes a
藉由在等離子處理裝置設置上述加熱器結構1,使得在實際工作過程中,由於加熱器1的第一加熱絲112和第二加熱絲122爲形狀相同,且上下對準排布,並且以相互串聯的方式連接於加熱電源2,同時加熱電源2在第一加熱絲112上産生的電流方向與在第二加熱絲122上産生的電流方向相反,亦即,同一方向的電流在流經第一加熱絲112和第二加熱絲122時,在第一加熱絲112的電流方向與在第二加熱絲122的電流方向相反,而且由於第一加熱絲112與第二加熱絲122的形狀相同,因此,當射頻線圈3産生的高頻磁場穿過第一加熱絲112和第二加熱絲122時,第一加熱絲112與第二加熱絲122所構成的閉環的磁通量接近於零,並且高頻磁場穿過第一加熱絲112産生的感應電流與穿過第二加熱絲122時産生的感應電流正好能夠相互抵消。從而有效地避免了加熱器1所引起的射頻線圈3功率損耗的問題。此外,藉由在第一加熱絲112下方和第二加熱絲122的下方均設置絕緣板的結構,能夠有效的避免第一加熱絲112與第二加熱絲122之間産生電弧的風險,同時還有助於提升加熱器1的加熱均勻性。其中,均勻性主要體現在兩層子加熱器固定連接,一般可選擇導熱膠黏貼,整體的加熱器1設置在整個絕緣窗中間,對整體加熱的效果會更好;而藉由設置兩層子加熱器的結構,移除了單個加熱器上加熱絲排布間隔不能過大的限制,所以同時減少了加熱絲排布過密産生電弧的風險。因爲單個加熱器只有藉由排布細密才能減少閉環磁通量的面積,而排布過密有産生電弧的風險。By arranging the above-mentioned
需要說明的是,本領域技術人員都應該能夠理解的是,加熱電源2在第一加熱絲112産生的電流方向與加熱電源2在第二加熱絲122産生的電流方向相反中,所指的電流方向是指電流分別在第一加熱絲和第二加熱絲上的流經路徑的方向。而且爲了實現流經路徑的方向相反,第一加熱絲112與第二加熱絲122相互串聯的具體結構形式爲第一加熱絲112的首端與第二加熱絲122的首端電氣連接,第一加熱絲112的尾端與第二加熱絲122的尾端電氣連接,其中上下對準排布的第一加熱絲112與第二加熱絲122均包括首端和尾端,上下兩個加熱絲的首端與首端上下對準布置,尾端與尾端對準布置。It should be noted that those skilled in the art should be able to understand that the direction of the current generated by the
另外需要說明的是,上述第一絕緣板111和第二絕緣板121均較佳採用陶瓷板。因爲陶瓷板具有良好的保溫性能和熱傳導的均勻性。藉由設置成陶瓷材料更加有利於加熱器1的加熱均勻性。當然可以理解的是,上述採用陶瓷板的方式僅僅是本發明實施例的較佳舉例而已,實際應用過程中,還可以選擇本領域技術人員常用的其他材質的絕緣板,在此不做具體的限定。In addition, it should be noted that, the above-mentioned first insulating
在一些具體的實施手段中,上述加熱器1的數量可以選擇爲多個,也可以選擇爲僅布置一個,且當布置成多個時,需要採用上下對準排布。In some specific implementation means, the number of the above-mentioned
進一步的實施手段中,當選擇布置成多個加熱器的方式時,多個加熱器1較佳並聯或串聯於同一個加熱電源2上,因爲藉由並聯於同一個加熱電源2上,更有利於各個加熱器1加熱的溫度一致性和均勻性。當然可以理解的是,實際應用過程中還可以根據實際需求選擇每個加熱器1均設置獨立的加熱電源2,又或者部分加熱器1採用並聯在一個加熱電源2上,部分加熱器1採用獨立的加熱電源2,實際應用中可以根據實際加熱需求進行布置;當然可以理解的是,當需要對每個加熱器1進行精準控制時,也可以選擇每個加熱器1均設置獨立的加熱電源2。In a further implementation means, when choosing the way of arranging multiple heaters,
這裡需要說明的是,一般來說,上述第一加熱絲112和第二加熱絲122均較佳設計成平面螺旋形的結構。當然可以理解的是,採用平面螺旋形結構的加熱絲僅僅是本發明實施例的較佳舉例而已,實際應用過程中,還可以選擇根據實際需求設計成其他的形狀。It should be noted here that, generally speaking, the above-mentioned
另外需要說明的是,一般來說,上述加熱電源2較佳爲交流加熱電源,當然可以理解的是,實際應用過程中也可以根據實際需求選擇爲直流加熱電源。In addition, it should be noted that, in general, the above-mentioned
此外,需要說明的是,一般來說,上述第一加熱絲112藉由導熱膠黏結的方式固定在第一絕緣板111上;第二加熱絲122藉由導熱膠黏結的方式固定在第二絕緣板121上。當然可以理解的是,上述以導熱膠黏結的方式實現加熱絲與絕緣板的固定僅僅是本發明實施例的較佳舉例而已,實際應用過程中,還可以選擇本領域技術人員常用的其他固定方式,比如加熱絲部分嵌入絕緣板的方式等,在此不做具體的限定。In addition, it should be noted that, in general, the
另外需要說明的是,爲了保證加熱器整體的加熱的均勻性,第一子加熱器與第二子加熱器較佳採用導熱膠黏結固定。並且當加熱器的數量爲多個時,一般較佳將相鄰兩個加熱器之間也藉由導熱膠黏結固定。In addition, it should be noted that, in order to ensure the uniformity of the overall heating of the heater, the first sub-heater and the second sub-heater are preferably bonded and fixed with a thermally conductive adhesive. And when the number of heaters is multiple, it is generally preferable to bond and fix two adjacent heaters with thermally conductive adhesive.
此外,本發明還提供了一種等離子處理裝置的加熱器1,加熱器1設置在等離子處理裝置的絕緣材料窗中,加熱器1包括第一加熱絲112和第二加熱絲122,第一加熱絲112和第二加熱絲122形狀相同且上下間隔預設距離對準排布,第一加熱絲112與第二加熱絲122以相互串聯的方式連接於加熱電源2,且加熱電源2在第一加熱絲112內産生的電流方向,與加熱電源2在第二加熱絲122內産生的電流方向相反。In addition, the present invention also provides a
藉由將加熱器1設置在等離子處理裝置的絕緣材料窗中,具體是指加熱器1採用全部或者部分嵌入絕緣材料窗內,比如其中絕緣材料窗中埋了一層加熱絲在整個絕緣窗中間,另一層加熱絲設置在絕緣材料窗的頂面。這樣布置使得整體加熱的均勻性效果會更好。當然可以理解的是,實際應用過程中,也可以是將整個第一加熱絲112和第二加熱絲122均嵌設在絕緣材料窗內部。By arranging the
另外,本發明還提供了一種等離子處理裝置,包括加熱器結構,並且所述加熱器結構爲上述任一手段所描述的加熱器結構。由於上述加熱器結構具有上述技術效果,因此具有上述加熱器結構的等離子處理裝置也應具有相應的技術效果,在此不再贅述。In addition, the present invention also provides a plasma processing apparatus, comprising a heater structure, and the heater structure is the heater structure described in any of the above means. Since the above-mentioned heater structure has the above-mentioned technical effect, the plasma processing apparatus having the above-mentioned heater structure should also have the corresponding technical effect, which will not be repeated here.
以上對本發明所提供的等離子處理裝置及其加熱器進行了詳細介紹。需要說明的是,本說明書中的各個實施例均採用遞進的方式描述,每個實施例重點說明的都是與其他實施例的不同之處,各個實施例之間相同相似的部分互相參見即可。The plasma processing apparatus and the heater thereof provided by the present invention have been described in detail above. It should be noted that the various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. For the same and similar parts among the various embodiments, refer to each other Can.
還需要說明的是,在本文中,諸如術語“包括”、“包含”或者其任何其他變體意在涵蓋非排他性的包含,從而使得包括一系列要素的物品或者設備不僅包括那些要素,而且還包括沒有明確列出的其他要素,或者是還包括爲這種物品或者設備所固有的要素。在沒有更多限制的情况下,由語句“包括一個……”限定的要素,並不排除在包括上述要素的物品或者設備中還存在另外的相同要素。It should also be noted that, herein, terms such as "comprising", "comprising" or any other variation thereof are intended to encompass non-exclusive inclusion, whereby an article or device comprising a list of elements includes not only those elements, but also Include other elements not expressly listed, or elements inherent to the article or equipment. Without further limitation, an element defined by the phrase "comprising a..." does not preclude the presence of additional identical elements in an article or device that includes the above-mentioned element.
本文中應用了具體個例對本發明的原理及實施方式進行了闡述,以上實施例的說明只是用於幫助理解本發明的核心思想。應當指出,對於本技術領域的普通技術人員來說,在不脫離本發明原理的前提下,還可以對本發明進行若干改進和修飾,這些改進和修飾也落入本發明申請專利範圍的保護範圍內。The principles and implementations of the present invention are described herein by using specific examples, and the descriptions of the above embodiments are only used to help understand the core idea of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can also be made to the present invention, and these improvements and modifications also fall within the protection scope of the patented scope of the present invention. .
1:加熱器 2:加熱電源 3:射頻線圈 11:第一子加熱器 12:第二子加熱器 111:第一絕緣板 112:第一加熱絲 121:第二絕緣板 122:第二加熱絲1: heater 2: Heating power supply 3: RF coil 11: The first sub heater 12: Second sub heater 111: The first insulating plate 112: The first heating wire 121: Second insulating plate 122: Second heating wire
第1圖爲本發明實施例提供的離子處理裝置的加熱器的結構示意圖; 第2圖爲本發明實施例提供的第一加熱絲與第二加熱絲展開後的串聯結構示意圖,圖中箭頭代表電流流向。FIG. 1 is a schematic structural diagram of a heater of an ion processing apparatus provided by an embodiment of the present invention; FIG. 2 is a schematic diagram of a series structure of the first heating wire and the second heating wire after unfolding according to an embodiment of the present invention, and the arrows in the figure represent the current flow.
1:加熱器1: heater
3:射頻線圈3: RF coil
11:第一子加熱器11: The first sub heater
12:第二子加熱器12: Second sub heater
111:第一絕緣板111: The first insulating plate
112:第一加熱絲112: The first heating wire
121:第二絕緣板121: Second insulating plate
122:第二加熱絲122: Second heating wire
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