TWI626765B - Semiconductor structures having active regions comprising ingan, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures - Google Patents

Abstract

The present invention provides a semiconductor structure that includes an active region between a plurality of InGaN layers. The active region can comprise at least substantially InGaN. The plurality of InGaN layers include at least one well layer containing In _w Ga _1-w N and at least one barrier layer containing In _b Ga _1-b N in close proximity to the at least one well layer. In some embodiments, the w value in the In _w Ga _1-w N of the well layer can be greater than or equal to about 0.10 and in some embodiments can be less than or equal to about 0.40, and the at _b Ga of the at least one barrier layer The b value in _1-b N can be greater than or equal to about 0.01 and less than or equal to about 0.10. A method of forming a semiconductor structure includes growing such InGaN layers to form an active region of a light emitting device such as an LED. The illuminator device includes such LEDs.

Description

Semiconductor structure having an active region including InGaN, a method of forming the same, and a light-emitting device formed by the semiconductor structure Cross-reference to related applications

The subject matter of this case is in US Patent Application No. ___ (Attorney's Case No. 3356-11388US (F12/0504JFD GLA)) (the case is filed on the same day as Debray et al.) and US Patent Application No. ___ ( The agent's case number 3356-11802US (F13/0208 JFD GLA)) (which is filed on the same day as the case of Debray et al.) is incorporated by reference in its entirety.

The present invention relates to a semiconductor device having a semiconductor structure comprising an active region of InGaN and a semiconductor device made therefrom; a method of fabricating such a light-emitting device; and a device comprising such a light-emitting device.

A light emitting device, such as a light emitting diode (LED), is an electrical device that emits electromagnetic radiation in the form of visible light when a voltage is applied across an active region of the LED between the anode and the cathode. The LED typically comprises one or more layers of semiconductor material, the electrons supplied by the anode and the holes supplied by the cathode being coincident within the layers of semiconductor material. When the electronics and holes are in the LED When the active regions overlap, energy is released as photons emitted by the active region of the LED.

LEDs can be fabricated to include a variety of different types of semiconductor materials including, for example, Group III to V semiconductor materials and Group II to V semiconductor materials. The wavelength of light emitted by any particular LED and the energy released when electrons coincide with the hole. Therefore, the wavelength of light emitted by the LED and the relative energy difference between the electron energy level and the hole energy level are related. The electronic energy level and the hole energy level are at least partially related to the composition of the semiconductor material, the doping type and concentration, the configuration of the semiconductor material (ie, the crystal structure and orientation), and the quality of the semiconductor material in which the electron and the hole are recombined. . Thus, the wavelength of light emitted by the LED can be selectively customized by selectively customizing the composition and configuration of the semiconductor material within the LED.

It is known in the art to fabricate LEDs comprising Group III to V semiconductor materials, such as Group III nitride materials. It is known that such Group III nitride LEDs are capable of emitting radiation in the blue and green visible regions of the electromagnetic radiation spectrum and are known to operate at relatively high power and luminosity.

This Summary is provided to introduce selected concepts in a simplified form. These concepts are further detailed in the embodiments of the invention below. It is not intended that the scope of the claimed subject matter should be construed as limiting the scope of the claimed subject matter.

In some embodiments, the invention includes a semiconductor structure comprising a GaN substrate layer having a polar growth plane having a growth face lattice parameter greater than or equal to about 3.189 Angstroms. The active area is disposed on the base layer, and the active area includes a plurality of InGaN layers. The plurality of InGaN layers include at least one In _w Ga _1-w N well layer, wherein 0.10 w 0.40; and at least one In _b Ga _1-b N barrier layer, wherein 0.01 b 0.10. An electron blocking layer is disposed on a side of the active region opposite the GaN substrate layer. The p-type body layer is disposed on the electron blocking layer, and the p-type body layer includes In _p Ga _1-p N, wherein 0.01 p 0.08. The p-type contact layer is disposed on the p-type body layer, and the p-type contact layer includes In _c Ga _1-c N, wherein 0.00 c 0.10.

In other embodiments, the invention includes a light emitting device made from such a semiconductor structure. For example, in other embodiments, the invention includes a light emitting device comprising a GaN base layer having a polar growth surface having a growth face lattice parameter greater than or equal to about 3.189 angstroms. The active area is placed on the substrate layer. The active region includes a plurality of InGaN layers, and the plurality of InGaN layers includes at least one well layer and at least one barrier layer. The electron blocking layer is disposed on the active area. The p-type In _p Ga _1-p N bulk layer is disposed on the electron blocking layer, and the p-type In _c Ga _1-c N contact layer is disposed on the p-type In _p Ga _1-p N bulk layer. Additionally, the critical strain energy of the illuminating device can be about 4500 (au) or less than 4500 (au).

Other embodiments of the invention include methods of making such structures and devices. For example, in some embodiments, the invention includes a method of forming a semiconductor structure in which a GaN substrate layer is provided having a polar growth plane having a growth face lattice parameter greater than or equal to about 3.189 Å. A plurality of InGaN layers are grown to form an active region on the substrate layer. The growth of the plurality of InGaN layers includes growing at least one well layer comprising In _w Ga _1-w N, wherein 0.10 w 0.40, and growing at least one barrier layer on at least one of the well layers, the at least one barrier layer comprising In _b Ga _1-b N, wherein 0.01 b 0.10. The electron blocking layer is grown on the active area. The p-type In _p Ga _1-p N bulk layer is grown on the electron blocking layer, wherein 0.01 p 0.08, and a p-type In _c Ga _1-c N contact layer is grown on the p-type In _p Ga _1-p N bulk layer, wherein 0.00 c 0.10.

100‧‧‧Semiconductor structure

102‧‧‧ basal layer

104‧‧‧p-type contact layer

106‧‧‧Action area

108‧‧‧Electronic barrier

110‧‧‧p-type body layer

112‧‧‧ GaN basal layer

113‧‧‧ Growth template

114‧‧‧InGaN well

116‧‧‧InGaN barrier layer

118‧‧‧ spacer

120‧‧‧In _cp Ga _1-cp N cap layer

122‧‧‧ illustration

124‧‧‧GaN layer

126‧‧‧Al _e Ga _1-e N layer

128‧‧‧Transmission belt

130‧‧‧Electrical energy level

132‧‧‧ Conduction band energy level

134‧‧‧ Conduction band energy level

136‧‧‧ illustration

138‧‧‧ GaN layer

140‧‧‧Al _e Ga _1-e N layer

200‧‧‧Semiconductor structure

202‧‧‧Electronic stop layer

204‧‧‧ illustration

206‧‧‧Al _st Ga _1-st N layer

208‧‧‧GaN layer

210‧‧‧ illustration

228‧‧‧Transmission belt

300‧‧‧Semiconductor structure

302‧‧‧ strain release layer

304‧‧‧ illustration

306‧‧‧In _sra Ga _1-sra N layer

308‧‧‧In _srb Ga _1-srb N layer

310‧‧‧ illustration

328‧‧‧Transmission belt

400‧‧‧Semiconductor structure

402‧‧‧GaN barrier layer

406‧‧‧Action area

428‧‧‧Transmission belt

500‧‧‧Semiconductor structure

506‧‧‧Action area

514 _A ‧‧‧First Quantum Well

514 _B ‧‧‧Second quantum well

516 _A ‧‧‧First barrier area

516 _B ‧‧‧Second barrier area

516 _C ‧‧‧ Third barrier area

528‧‧‧Transmission band energy

550 _A ‧‧‧ Band gap energy of 516 _{A in} the first barrier zone

550 _B ‧‧‧ Band gap energy of 516 _{B in} the second barrier zone

550 _C ‧‧‧ Band gap energy of 516 _{C in} the third barrier zone

552‧‧‧Price energy

552 _A ‧‧‧Gap energy

552 _B ‧‧‧Gap energy

552 _C ‧‧‧Gap energy

554 _A ‧‧‧Curtain energy barrier

554 _B ‧‧‧Curtain energy barrier

554 _C ‧‧‧Curtain energy barrier

556‧‧‧LED

558‧‧‧Action area

560‧‧‧ basal layer

562‧‧‧InGaN well layer

564‧‧‧ GaN barrier layer

566‧‧‧First spacer

568‧‧‧Second spacer

570‧‧‧Electronic barrier

572‧‧‧electrode layer

574‧‧‧Transmission belt

576‧‧‧Price band

600‧‧‧LED

602‧‧‧Transmission belt

604‧‧‧Price band

650‧‧‧Intermediate semiconductor structure

652‧‧‧ sacrificial substrate

654‧‧‧ compliant material layer

656‧‧‧In _s Ga _1-s N seed layer

658‧‧‧Support substrate

660‧‧‧Dielectric material layer/bonding layer

662‧‧‧Polar growth surface

680‧‧‧Semiconductor structure

682‧‧‧ growth stack

700‧‧‧Lighting device

702‧‧‧First electrode contact

704‧‧‧Second electrode contacts

800‧‧‧Lighting device

802‧‧‧First electrode contact

804‧‧‧Second electrode contacts

900‧‧‧Lighting device

902‧‧‧ Container

904‧‧‧Support structure

906‧‧‧First electrical contact structure

908‧‧‧Second electrical contact structure

910‧‧‧Wire

912‧‧‧ Inside surface of container 902

QW1‧‧‧No. 1 Quantum Well

QW2‧‧‧ Quantum Well No. 2

QW3‧‧‧No. 3 Quantum Well

QW4‧‧‧No. 4 Quantum Well

QW5‧‧‧No. 5 Quantum Well

Average thickness of the barrier layer 116 of T _b ‧‧‧

Average thickness of the T _b2 ‧‧‧ GaN barrier layer 402

Average layer thickness of T _c ‧‧‧p type contact layer 104

Average layer thickness of T _cp ‧‧‧In _cp Ga _1-cp N cap layer 120

T _e ‧‧‧ average layer thickness of the electron blocking layer 108

Average total thickness of the nth layer of T _n ‧‧‧InGaN

Average layer thickness of the T _p ‧‧‧p type body layer 110

Total layer thickness _{T s ‧‧‧In s Ga 1-s} N seed layer

Average layer thickness of the T _sp ‧‧‧In _sp Ga _1-sp N spacer layer 118

Average thickness of the electron stop layer 202 of T _st ‧‧‧

Average thickness of the well layer 114 of T _w ‧‧‧

1A is a simplified side view of a semiconductor structure including one or more InGaN well layers and one or more InGaN barrier layers in an active region of a semiconductor structure in accordance with an embodiment of the present invention.

FIG. 1B is a diagram illustrating the relative differences in conduction band energy levels of different materials in different layers of the semiconductor structure of FIG. 1A in a band diagram.

2A is a simplified side view of another semiconductor structure similar to the semiconductor structure of FIG. 1A, but further including an electron stop layer between the active region of the semiconductor structure and the substrate layer.

2B is a simplified conduction band diagram of the semiconductor structure of FIG. 2A.

3A is a simplified side view of another semiconductor structure similar to the semiconductor structure of FIG. 1A, but further including a strain relief layer between the active region of the semiconductor structure and the substrate layer.

Figure 3B is a simplified conduction band diagram of the semiconductor structure of Figure 3A.

4A is a simplified side view of another semiconductor structure similar to the semiconductor structure of FIG. 1A, but further including other thin GaN barrier layers in the active regions of the semiconductor structure.

4B is a simplified conduction band diagram of the semiconductor structure of FIG. 4A.

5A is a simplified side view of another semiconductor structure similar to the semiconductor structure of FIG. 1A, but further including a well overflow structure located within the active region of the semiconductor structure.

Figure 5B is a simplified energy band diagram of the semiconductor structure of Figure 5A.

6A is a simplified top plan view of an intermediate semiconductor structure that can be used to fabricate a growth template for fabricating a semiconductor structure in accordance with an embodiment of the method of the present invention.

Figure 6B is a partial cross-sectional side view of the intermediate semiconductor structure of Figure 6A.

Figure 6C is a partial cross-sectional side view of a growth template that can be used to fabricate a semiconductor structure in accordance with an embodiment of the method of the present invention.

Figure 6D illustrates the layers of the growth stack that are epitaxially deposited on the growth template of Figure 6C.

Figure 7 is a partial cross-sectional side view of a light emitting device fabricated using a semiconductor structure in accordance with an embodiment of the method of the present invention.

Figure 8 is another luminescence made using a semiconductor structure in accordance with an embodiment of the method of the present invention A partial cross-sectional side view of the device.

Figure 9 is a graph illustrating the relationship between internal quantum efficiency and total strain energy of a semiconductor structure formed in accordance with an embodiment of the method of the present invention.

Figure 10A is a simplified side view of a previously known LED including an InGaN well layer and a GaN barrier layer in the active area of the LED.

Figure 10B is a simplified conduction band diagram of the LED of Figure 10A.

Figure 11A is a diagram illustrating the band edges calculated for the conduction band and the valence band when the voltage applied across the LED active region of Figure 10A is zero, and such calculated values are obtained using a computer model of the LED.

Fig. 11B is a view similar to Fig. 11A, but this figure illustrates the band edge calculated for the conduction band and the valence band when the current density flowing through the active region is 125 A/cm ² by applying a voltage across the active region of the LED. .

Figure 11C is a graph illustrating the calculated emission intensity versus wavelength for each InGaN quantum well layer in the LED of Figure 11A.

Figure 11D is a graph illustrating the relationship between the calculated value of the carrier injection efficiency of the LED of Figure 11A and the current density applied across the active region.

Figure 11E is a graph illustrating the relationship between the calculated internal quantum efficiency of the LED of Figure 11A and the current density applied across the active region.

12A is a simplified side view of an LED of the present invention similar to the LED of FIG. 1A and including an InGaN well layer and an InGaN barrier layer in the active area of the LED.

Figure 12B is a simplified conduction band diagram of the LED of Figure 12A.

Figure 13A is a diagram illustrating the band edges calculated for the conduction band and the valence band when the voltage applied across the active area of the LED of Figure 12A is zero, and such calculated values are obtained using a computer model of the LED.

Fig. 13B is a view similar to Fig. 13A, but Fig. 13B illustrates the band edge calculated for the conduction band and the valence band when the current density flowing through the active region is 125 A/cm ² by applying a voltage across the active region of the LED.

Figure 13C is a graph illustrating the calculated emission intensity versus wavelength for each InGaN quantum well layer in the LED of Figure 13A.

Figure 13D is a graph illustrating the relationship between the calculated value of the carrier injection efficiency of the LED of Figure 13A and the current density applied across the active region.

Figure 13E is a graph illustrating the relationship between the calculated internal quantum efficiency of the LED of Figure 13A and the current density applied across the active region.

Figure 14 illustrates an example of a light-emitting device including the LED of the present invention.

The illustrations presented herein are not intended to be a true view of any particular semiconductor material, structure or device, but are merely idealized embodiments for describing embodiments of the invention.

FIG. 1A illustrates one embodiment of a semiconductor structure 100. The semiconductor structure 100 includes a plurality of Ill-nitride layers (eg, indium nitride, gallium nitride, aluminum nitride, and alloys thereof) and includes a base layer 102, a p-type contact layer 104, and a base layer 102 and a p-type contact layer. An active region 106 between 104, the active region 106 includes a plurality of InGaN layers. Additionally, the active region 106 includes at least one InGaN well layer and at least one InGaN barrier layer. In some embodiments, the active region 106 can comprise at least substantially InGaN (but with dopants present therein). The semiconductor structure 100 further includes an electron blocking layer 108 disposed on the active region 106, a p-type body layer 110 disposed on the electron blocking layer 108, and a p-type contact layer 104 disposed on the p-type body layer 110.

The base layer 102 can include a GaN base layer 112, wherein the growth face of the GaN base layer 112 is a pole face having a growth face lattice parameter greater than or equal to about 3.189 angstroms. A light emitting device such as a light emitting diode can be made from semiconductor structure 100, as described in detail below. However, in short, the first electrode contact may be formed on a portion of the GaN base layer 112, and the second electrode contact may be formed on a portion of the p-type contact layer 104 such that the electrode may be connected across the active region 106. A voltage is supplied between the dots to thereby make the light-emitting device made of the semiconductor structure 100 Emission of electromagnetic radiation (eg visible light).

Embodiments of the semiconductor structures of the present invention, including active regions comprising at least one InGaN well layer and at least one InGaN barrier layer, can be fabricated using various methods of growing or otherwise forming a Group III nitride layer, such as InGaN. As a non-limiting example, each of the Group III nitride layers may be grown or otherwise deposited using one or more of the following methods: chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), vapor phase epitaxy ( VPE) method, atomic layer deposition (ALD) method, hydride vapor epitaxy (HVPE) method, molecular beam epitaxy (MBE) method, atomic layer deposition (ALD) method, chemical beam epitaxy (CBE) method, and the like.

In some embodiments, the methods disclosed in one or all of the following documents can be used to grow or otherwise deposit individual Group III nitride layers: US Patent Application Publication No. US 2010/0176490 A1 to Letertre et al. The name is disclosed in the U.S. Patent Application Publication No. US 2010/0109126, which is hereby incorporated by reference in its entirety in Published in the name of Figuet on August 23, 2012; and U.S. Patent Application Publication No. US 2012/0225539, published in the name of Figuet on September 6, 2012, the respective disclosures of each of which are hereby incorporated by reference. The manner of reference is incorporated herein. These methods enable the fabrication of Group III nitride layers having compositions and thicknesses as described below, such as InGaN layers (and other optionally Group III nitride layers). These methods can be used to form the growth template 113, and a subsequent III-nitride layer can be formed on the growth template 113.

An example of such a method that can be used to fabricate the growth template 113 in accordance with an embodiment of the present invention is briefly described below with reference to Figures 6A through 6C.

Figure 6A is a top plan view of an intermediate semiconductor structure 650 for forming a growth template 113 (Figure 1A) on which one or more semiconductor structures of the present invention and subsequent illumination devices can be fabricated, and Figure 6B is for A simplified cross-sectional view of a portion of intermediate semiconductor structure 650 forming growth template 113. The growth template 113 can be manufactured as disclosed in the above-mentioned U.S. Patent Application Publication No. US 2010/0176490 A1 and/or U.S. Patent Application Publication No. US 2010/0109126. As disclosed therein, the intermediate semiconductor structure 650 can include a sacrificial substrate 652, a layer of compliant material 654 disposed on the sacrificial substrate 652, and one or more In _s Ga _1-s N seed layers 656, each of the seed layers A layer III nitride material disposed on compliant material 654 is included. One or more In _s Ga _1-s N seed layers 656 can be used as "seeds" on which various subsequent layers of the semiconductor structure 100 described herein can be formed.

The initial In _s Ga _1-s N seed layer may be formed on the initial growth substrate and then transferred to the sacrificial substrate 652 using a portion such as ion implantation, bonding, and subsequent separation of the initial In _s Ga _1-s N seed layer. (not shown). The initial growth substrate may include a growth substrate characterized by a growth face lattice mismatched with the initial In _s Ga _1-s N seed layer to form the In _s Ga _1-s N seed layer in a colored manner. For example, the initial growth substrate may comprise a sapphire substrate comprising a gallium polar GaN seed layer such that the formed In _s Ga _1-s N seed layer comprises gallium polarity In _s Ga _1-s N subjected to tensile strain Seed layer.

The initial In _s Ga _1-s N seed layer may be formed or grown such that the In _s Ga _1-s N seed layer comprises a growth face containing a III-nitride pole face. For example, a growth face can be formed such that the In _s Ga _1-s N seed layer comprises a gallium pole face. In addition, the initial In _s Ga _1-s N seed layer may be grown or otherwise formed such that the composition of the In _s Ga _1-s N seed layer satisfies 0.02. s 0.05. As a specific, non-limiting example, the value of n in the In _s Ga _1-s N seed layer can be equal to about 0.03. The In _s Ga _1-s N seed layer may also be grown or otherwise formed to a thickness greater than about two hundred nanometers (200 nm). However, In _s Ga _1-s N seed layer may In _s Ga _1-s N seed layer does not exceed the critical thickness of the In _s Ga _1-s N seed layer is formed, In _s Ga _1-s N seed crystal The critical thickness of the layer is the thickness at which the strain of the In _s Ga _1-s N seed layer can be relaxed due to the formation of other defects. This phenomenon is commonly referred to as phase separation in the art. Therefore, the In _s Ga _1-s N seed layer may contain a high-quality seed material that has undergone strain.

By way of non-limiting example, methods known in the industry as SMART-CUT process may be used In _s Ga _1-s N seed layer 656 is transferred to the sacrificial substrate 652, sacrificial substrate 652 used as a bonding material layer 654 compliant layer. Such methods are described in detail in, for example, U.S. Patent No. RE 39,484 to Bruel, U.S. Patent No. 6,303,468 to Aspar et al., U.S. Patent No. 6,335,258 to Aspar et al., U.S. Patent No. 6,756,286 to Moriceau et al., Aspar et al. The disclosures of each of these patents are hereby incorporated by reference in their entirety in their entireties in the entire disclosure of the disclosure of the disclosure of the disclosure of the disclosure of the disclosure of

The sacrificial substrate 652 can comprise a homogeneous material or a heterogeneous (ie, composite) material. As a non-limiting example, support substrate 652 can comprise sapphire, germanium, group III arsenide, quartz (SiO ₂ ), molten cerium oxide (SiO ₂ ) glass, glass ceramic composite (such as Schott North America, Inc., Duryea) , PA sold under the trademark ZERODUR®), fused cerium oxide glass composites (such as SiO ₂ -TiO ₂ or Cu ₂ -Al ₂ O ₃ -SiO ₂ ), aluminum nitride (AlN) or tantalum carbide (SiC) .

The compliant material layer 654 can comprise, for example, a material having a glass transition temperature ( _Tg ) less than or equal to about 800 °C. The thickness of the compliant material layer 654 can range from about 0.1 [mu]m to about 10 [mu]m, and more specifically, from about 1 [mu]m to about 5 [mu]m. As a non-limiting example, compliant material layer 100 can comprise at least one of: oxide, phosphonium silicate glass (PSG), borosilicate (BSG), borophosphonite glass (BPSG), polyimine , doped or undoped quasi-inorganic oxirane spin-on glass (SOG), inorganic spin-on glass (ie methyl-, ethyl-, phenyl- or butyl), and doped or undoped Citrate.

The compliant material layer 654 can be heated, for example, by an oven, furnace, or deposition reactor to a temperature sufficient to reduce the viscosity of the compliant material layer 654, thereby reflowing the compliant material layer 654, thereby causing one or more In _s Ga _1-s N The lattice strain of the seed layer 656 is at least partially relaxed. By reducing the viscosity of the compliant material layer 654, the tensile strain of the In _s Ga _1-s N seed layer 656 can be at least partially relaxed or even eliminated, thereby forming a growth surface lattice parameter greater than or equal to about 3.189 angstroms. In _s Ga _1-s N seed layer 656.

Thus, by making In _s Ga _1-s at least a portion of the lattice strain relaxation occurs within the N, allows growth plane lattice parameter In _s Ga _1-s N is greater than or equal to about 3.189 Å. The growth plane lattice parameter greater than or equal to 3.189 angstroms may correspond to the equilibrium growth plane lattice constant of wurtzite GaN. Thus, in accordance with some embodiments of the present invention, one or more GaN layers formed on or over the In _s Ga _1-s N layer of the present invention may be formed in an unstrained state, i.e., substantially free of lattice strain.

Once the one or more In _s Ga _1-s N seed layers 656 are at least partially relaxed, the In _s Ga _1-s N seed layer 656 can be transferred onto the support substrate, and then the compliant material 654 and the sacrificial substrate can be removed. 652 is formed to form a growth template 113 as illustrated in Figures 1A and 6C. Referring in detail to Figures 6B and 6C, an at least partially relaxed In _s Ga _1-s N seed layer 656 can be attached to the support substrate 658 and can be used, for example, in laser lift-off, wet etching, dry etching, and chemical mechanical polishing. The sacrificial substrate 652 and the compliant material 654 are removed by one or more methods.

Support substrate 658 can comprise a homogeneous material or a heterogeneous (ie, composite) material. As a non-limiting example, support substrate 658 can comprise sapphire, germanium, group III arsenide, quartz (SiO ₂ ), molten cerium oxide (SiO ₂ ) glass, glass ceramic composite (such as Schott North America, Inc., Duryea) , PA sold under the trademark ZERODUR®), fused cerium oxide glass composites (such as SiO ₂ -TiO ₂ or Cu ₂ -Al ₂ O ₃ -SiO ₂ ), aluminum nitride (AlN) or tantalum carbide (SiC) .

As shown in FIG. 6C, in some embodiments, the growth template 113 can optionally include a layer of dielectric material 660 that covers the support substrate 100. Dielectric material layer 660 may optionally be formed on the main surface of support substrate 658 or one or more In _s Ga _1-s N seed layers 656, wherein dielectric material 660 is used as a bonding layer to facilitate In _s Ga _{1 The -s} N seed layer 656 is bonded to the support substrate 658. The dielectric material layer 660 may include, for example, hafnium oxynitride (SiON), tantalum nitride (Si ₃ N ₄ ), or hafnium oxide (SiO ₂ ), and may be, for example, chemical vapor deposition (CVD), physical vapor deposition ( PVD) or atomic layer deposition (ALD) formation. Therefore, as shown in FIGS. 1A and 6C, the growth template 113 includes a support substrate 658 and an In _s Ga _1-s N seed layer 656 disposed on the support substrate 658.

In addition, the In _s Ga _1-s N seed layer 656 may be formed on the support substrate 658 such that the composition range of the In _s Ga _1-s N seed layer 656 may be 0.02. s 0.05. As a non-limiting specific example, the s value in the In _s Ga _1-s N seed layer 656 can be equal to about 0.03. Additionally, the In _s Ga _1-s N seed layer 656 can have a polar growth surface 662 having a growth face lattice parameter greater than or equal to about 3.189 angstroms. An In _s Ga _1-s N seed layer having a total layer thickness T _s greater than about one hundred nanometers (100 nm) may also be formed.

Growth template 113 forms part of base layer 102 of Figure 1A. In some embodiments, the base layer may also include a GaN base layer 112, wherein the GaN base layer inherits the crystal characteristics of the adjacent In _s Ga _1-s N seed layer 656. Therefore, the GaN underlayer 112 may also include a polar growth plane having a growth plane lattice parameter greater than or equal to about 3.189 angstroms, such as a gallium polar growth plane.

The GaN underlayer 112 can comprise at least substantially GaN (but with dopants present therein). GaN underlying layer of the average layer thickness 112 T _n may be between about ten nanometers (10 nm) between and about three thousand (3,000 nm) nm, or in some embodiments, between about ten nanometers (10 nm) and About one thousand nanometers (1,000 nm). The GaN underlayer 112 may be doped as appropriate. For example, the GaN underlayer 112 can be n-doped by doping with an electron donor element such as germanium or antimony. The dopant concentration in the GaN base layer 112 can range from about 3e ¹⁷ cm ^-3 to about 1e ²⁰ cm ^-3 or, in some embodiments, from about 5e ¹⁷ cm ^-3 to about 1e ¹⁹ cm ^-3 .

After forming one or more of the other layers of InGaN including the semiconductor structure 100, a first electrode contact may be formed on a portion of the GaN substrate layer 112 to fabricate the light emitting device using the semiconductor structure 100.

As shown in FIG. 1A, the completed substrate layer 102 comprises a growth template 113 as described above, and a GaN substrate layer 112. Each of the Ill-nitride layers of the semiconductor structure 100 can be grown or otherwise formed in a layer-by-layer process as described in further detail below. In some embodiments, the base layer 102 can include a substrate on which other layers of the semiconductor structure 100 are grown or otherwise formed. Thus, each of the Ill-nitride layers of the semiconductor structure 100 can be grown or otherwise formed sequentially as follows: starting from the base layer 102 and moving from left to right from the perspective of FIG. 1A, but the orientation of the structure can actually The substrate layer 102 is placed on the bottom during manufacture. In other words, during fabrication, the structural orientation can be ninety degrees counterclockwise from the direction of Figure 1A.

As discussed in further detail below, the active region 106 is disposed between the base layer 102 and the p-type contact layer 104. The active region 106 includes at least one InGaN well layer 114 and at least one InGaN barrier layer 116. In some embodiments, the active region 106 can comprise at least substantially InGaN (but with dopants present therein). In particular, the active area 106 can include at least one well layer 114, and the well layer 114 includes In _w Ga _1-w N, where 0.10 w 0.40, or in some embodiments, where 0.12 w 0.25, or in other embodiments, where w is equal to about 0.14. The active region 106 also includes at least one barrier layer 116, the barrier layer 116 comprising In _b Ga _1-b N, wherein 0.01 b 0.10, or in some embodiments, where 0.03 b 0.08, or in other embodiments, wherein b is equal to about 0.05. In some embodiments, the InGaN barrier layer 116 can be in close proximity (eg, directly adjacent) to at least one InGaN well layer 114.

In the fabrication of a light-emitting device, such as a light-emitting diode (LED), the active region 106 of the semiconductor structure is the region of the semiconductor structure in which the electrons and the holes coincide with each other to produce photons emitted by the LED. In some embodiments, the photons are emitted in the form of visible light. At least some of the visible light may have a wavelength in the range of about three hundred and eighty nanometers (380 nm) to about five hundred and sixty nanometers (560 nm) of electromagnetic radiation.

As mentioned above, the active region 106 of the semiconductor structure 100 includes one or more InGaN well layers 114 and one or more InGaN barrier layers 116, and in some embodiments may at least substantially comprise InGaN (but with dopants present therein) Agent). Thus, in some embodiments, the active region 106 can be composed primarily of InGaN. The active region 106 includes one or more pairs of adjacent layers including a well layer 114 and a barrier layer 116, wherein each well layer 114 includes In _w Ga _1-w N, of which 0.10 w 0.40, and wherein each barrier layer 116 comprises In _b Ga _1-b N, wherein 0.01 b 0.10.

In the embodiment illustrated in FIGS. 1A and 1B, the active region 106 of the semiconductor structure 100 includes a (1) pair of active layers (a well layer 114 and a barrier layer 116), but in other embodiments, the semiconductor structure 100 The active area 106 can include more than a pair of active layers. For example, the active region 106 of the semiconductor structure 100 can include one (1) to twenty-five (25) pairs of phases. Adjacent layers, each pair includes a well layer 114 and a barrier layer 116 such that the active region 106 includes a stack of alternating well layers 114 and barrier layers 116 (in embodiments including more than one pair). It should be understood, however, that the number of barrier layers 116 may not be equal to the number of well layers 114. The well layers 114 may be separated from one another by a barrier layer 116. Thus, in some embodiments, the number of barrier layers 116 may be equal to the number of well layers 114, one or more more than the number of well layers 114.

With continued reference to FIG. 1A, the average layer thickness T _{W of} each well layer 114 can be between about one nanometer (1 nm) and about one thousand nanometers (1,000 nm), about one nanometer (1 nm) and about one hundred nanometers. Between meters (100 nm), or even between about one nanometer (1 nm) and about ten nanometers (10 nm). In some embodiments, the well layer 114 can comprise a quantum well. In such an embodiment, each of the well layer 114 may have about ten nanometers (10 nm) or less than ten nm of the average layer thickness T _W. In other embodiments, quantum well layer 114 may not include wells, and each well layer 114 may be greater than about ten nanometers (10 nm) in average layer thickness T _W. In such embodiments, the active area 106 may comprise what is referred to in the art as a "double heterostructure." The average layer thickness T _{B of} each barrier layer 116 may be between about one nanometer (1 nm) and about fifty nanometers (50 nm), or even between about one nanometer (1 nm) and about ten nanometers (10 nm). Between, but the barrier layer 116 may be thicker in other embodiments.

One or both of the well layer 114 and the barrier layer 116 may be doped. For example, one or both of the well layer 114 and the barrier layer 116 may be n-doped by doping with an electron donor element such as germanium or antimony. The dopant concentration in the well layer 114 can range from about 3e ¹⁷ cm ^-3 to about 1e ¹⁹ cm ^-3 or, in some embodiments, from about 3e ¹⁷ cm ^-3 to about 5e ¹⁷ cm ^-3 . Similarly, the dopant concentration in the barrier layer 116 can range from about 3e ¹⁷ cm ^-3 to about 1e ¹⁹ cm ^-3 or, in some embodiments, from about 1e ¹⁸ cm ^-3 to about 3e ¹⁸ cm ^-3 .

One or both of the well layer 114 and the barrier layer 116 may have a wurtzite crystal structure. Additionally, in some embodiments, one or both of the well layer 114 and the barrier layer 116 may comprise a polar growth surface, such as a gallium polar growth surface, parallel to the average crystal growth surface of the interface between the well layer 114 and the barrier layer 116. The lattice constant is greater than or equal to about 3.189 angstroms. More specifically, in some embodiments, the average growth face lattice constant c can be between about 3.189 angstroms and about 3.2 angstroms.

The average total thickness of the active region 106 comprising at least one well layer and at least one barrier layer may range from about forty nanometers (40 nm) to about one thousand nanometers (1000 nm), about forty nanometers (40 nm) to about seven One hundred and fifty nanometers (750 nm), or even about forty nanometers (40 nm) to about two hundred nanometers (200 nm).

With continued reference to FIG. 1A, semiconductor structure 100 can optionally include other layers between active region 106 and p-type contact layer 104 and/or between active region 106 and substrate layer 102. For example, in some embodiments, semiconductor structure 100 can include a spacer layer 118 between active region 106 and substrate layer 102.

The spacer layer 118, as the case may be, may comprise an In _sp Ga _1-sp N layer, wherein 0.01 Sp 0.10, or 0.03 of them Sp 0.06, or where sp is equal to about 0.05. The spacer layer 118 can be used to provide a more asymptotic transition between the substrate layer 102 and the layers of the active region 106, which can have different compositions (and therefore different lattice parameters) relative to the GaN substrate layer 112. Thus, in some embodiments, the In _sp Ga _1-sp N spacer layer 118 can be disposed directly between the substrate layer 102 and the active region 106. By providing a more asymptotic transition between the base layer 102 and the active region 106, the stress within the lattice of each InGaN layer can be reduced, and thus defects caused by such stresses can be reduced. The average layer thickness T _{sp of the} In _sp Ga _1-sp N spacer layer 118 may be between about one nanometer (1 nm) and about one hundred nanometers (100 nm), or about one nanometer (1 nm) and about one hundred Between nanometers (100nm). As a non-limiting specific example, the average layer thickness T _sp may be equal to about ten nanometers (10nm).

The In _sp Ga _1-sp N spacer layer 118 may be doped as appropriate. For example, the In _sp Ga _1-sp N spacer layer 118 can be n-doped by doping with an electron donor element such as germanium or antimony. The dopant concentration in the spacer layer 118 can range from about 3e ¹⁷ cm ^-3 to about 1e ¹⁹ cm ^-3 . As a non-limiting specific example, the dopant concentration in the spacer layer 118 can be equal to about 2e ¹⁸ cm ^-3 .

With continued reference to FIG. 1A, the semiconductor structure 100 can further include an In _cp Ga _1-cp N cap layer 120, as appropriate, with the cap layer 120 disposed between the active region 106 and the p-type contact layer 104. The In _cp Ga _1-cp N cap layer 120 may optionally include an In _cp Ga _1-cp N layer, wherein 0.01 Cp 0.10, or 0.03 of them Cp 0.07. As a non-limiting specific example, the cp value can be equal to about 0.05. The In _cp Ga _1-cp N cap layer 120 can be used to avoid indium dissolution and/or evaporation in the underlying layer of the active region 106 after subsequent high temperature processing, and/or can function as the spacer layer.

The average layer thickness T _{cp of the} In _cp Ga _1-cp N cap layer 120 may be between about one nanometer (1 nm) and about one hundred nanometers (100 nm), or about one nanometer (1 nm) and about twenty. Between five nanometers (25nm). As a non-limiting specific example, T _cp can be equal to about ten nanometers (10 nm). The cap layer 120 can be doped as appropriate. For example, cap layer 120 can be p-doped by doping with electron acceptor elements such as magnesium, zinc, and carbon. In other embodiments, however, cap layer 120 can be n-type doped. The dopant concentration in the cap layer 120 can range from about 3e ¹⁷ cm ^-3 to about 1e ¹⁹ cm ^-3 , or can range from about 1e ¹⁸ cm ^-3 to about 5e ¹⁸ cm ^-3 . As a non-limiting specific example, the dopant concentration in the cap layer 120 can be about 2e ¹⁸ cm ^-3 in some embodiments.

The semiconductor structure 100 of the present invention can further include one or more electron blocking layers (EBL) disposed between the active region 106 and the p-type contact layer 104. The electron blocking layers can comprise a material in which the edge energy levels of the conduction band are relatively higher than the conduction band energy band edges of the active region 106, which can be used to confine electrons within the active region 106 and prevent carrier self-active regions 106. Overflow.

As a non-limiting example, FIG. 1A illustrates an electron blocking layer 108 disposed on a side of the cap layer 120 opposite the active region 106. As shown in FIG. 1A, in an embodiment that includes a p-type body layer 110, the electron blocking layer 108 can be disposed directly between the cap layer 120 and the p-type body layer 110.

The electron blocking layer 108 comprises a Group III nitride. As a non-limiting example, the electron blocking layer 108 can comprise at least substantially In _e Ga _1-e N (but with dopants present therein), wherein 0.00 e 0.02, and in some embodiments, can comprise at least substantially GaN (but with dopants present therein). In other embodiments, the electron blocking layer 108 can comprise at least substantially Al _e Ga _1-e N, wherein 0.00 e 0.20. In some embodiments, the electron blocking layer 108 can comprise at least substantially Al _e Ga _1-e N (but with dopants present therein).

The electron blocking layer 108 is doped with one or more dopants selected from the group consisting of magnesium, zinc, and carbon. The one or more dopant concentrations in the electron blocking layer 108 may range from about 1e ¹⁷ cm ^-3 to about 1e ²¹ cm ^-3 or, in some embodiments, may be equal to about 3e ¹⁹ cm ^-3 . In some embodiments, the electron blocking layer 108 can have an average layer thickness T _e ranging from about five nanometers (5 nm) to about fifty nanometers (50 nm), or in some embodiments, can have equal to about twenty The average layer thickness T _{e of} nanometers (20 nm).

In other embodiments of the semiconductor structure 100 of the present invention, the semiconductor structure 100 can have an electron blocking layer similar to the electron blocking layer 108, but wherein the electron blocking layer has a superlattice structure comprising alternating layers of different materials, as shown The illustration of 1A is illustrated in Figure 122. For example, the electron blocking layer 108 can have a superlattice structure comprising alternating layers of GaN 124 and In _e Ga _1-e N 126, wherein 0.01 e 0.02. In other embodiments, the electron blocking layer may have a superlattice structure comprising alternating layers of GaN 124 and Al _e Ga _1-e N 126, wherein 0.01 e 0.20. Each of the superlattice structures may have an average layer thickness of from about one nanometer (1 nm) to about twenty nanometers (20 nm).

As mentioned above, the semiconductor structure 100 of the present invention can further include a p-type body layer 110 disposed between the electron blocking layer 108 and the p-type contact layer 104. These p-type body layers may comprise a p-doped Group III nitride material, such as p-doped In _p Ga _1-p N. These p-type body layers can be used, for example, as a hole carrier source to enhance conductivity and light extraction to and from the active region 106.

The p-type body layer 110 may at least substantially comprise In _p Ga _1-p N, wherein 0.01 p 0.08 (but with dopants present). As a non-limiting specific example, p-type body layer 110 can comprise at least substantially In _p Ga _1-p N, where p is equal to about 0.02. The p-type body layer 110 may be doped with one or more dopants selected from the group consisting of magnesium, zinc, and carbon. One or more dopant concentrations in the p-type body layer 110 can range from about 1e ¹⁷ cm ^-3 to about 1e ²¹ cm ^-3 . As a non-limiting specific example, the dopant concentration in the p-type body layer 110 can be equal to about 3e ¹⁹ cm ^-3 . In some embodiments, p is type body layer 110 may have about fifty nanometers (50 nm) to about six hundred nm the average layer (of 600 nm) range of the thickness T _p. As a non-limiting specific example, P-type body layer 110 may be equal to about one hundred seventy-five (175nm) nm average layer thickness T _p.

The semiconductor structure 100 can further include a p-type contact layer 104 disposed on a side of the p-type body layer 110 opposite the electron blocking layer 108. The p-type contact layer 104 can comprise a group III nitride. These p-type contact layers can be used, for example, to enhance hole conduction into the active region 106. The p-type contact layer 104 can include a higher concentration of one or more dopants, such as p-type dopants, to limit electrode contacts formed on a portion of the p-type contact layer during fabrication of the light-emitting device using the semiconductor structure 100. The resistance.

As a non-limiting example, p-type contact layer 104 can comprise p-type doped In _c Ga _1-c N. For example, the p-type contact layer 104 can comprise at least substantially In _c Ga _1-c N, wherein 0.01 c 0.10 (but with dopants present therein), and in some embodiments, p-type contact layer 104 can comprise at least substantially GaN (but with dopants present therein). The p-type contact layer 104 may be doped with one or more dopants selected from the group consisting of magnesium, zinc, and carbon. One or more dopant concentrations in the p-type contact layer 104 can range from about 1e ¹⁷ cm ^-3 to about 1e ²¹ cm ^-3 . As a non-limiting specific example, one or more dopant concentrations within the p-type contact layer 104 can be equal to about 1e ²⁰ cm ^-3 . p-type contact layer 104 may have about two nanometers (2nm) to about fifty nanometers average inner layer (50 nm) range of the thickness T _c. As a non-limiting specific example, p-type contact layer 104 may be equal to about fifteen (15nm) nm average layer thickness T _c. As shown in FIG. 1A, the p-type contact layer 104 can be formed directly on the p-type body layer 110.

As described in detail below, the completed semiconductor structure 100 can be used to fabricate one or more semiconductor light emitting devices, such as LEDs. In short, the electrode contacts may be formed on a portion of the semiconductor layer of the base layer 102, such as on a portion of the GaN substrate layer 112, and another electrode contact may be formed on a portion of the p-type contact layer 104, thereby The charge carriers are injected into the active region 106 to emit electromagnetic radiation in the form of visible light.

1B is a diagram illustrating the relative differences in the energy levels (in the energy band diagram) of different semiconductor materials of the various layers of the semiconductor structure 100 of FIG. 1A (note that the support substrate 658 and the bonding layer 660 are omitted). ). FIG. 1B is vertically aligned with the semiconductor structure 100 of FIG. 1A. The vertical dashed line in FIG. 1B is aligned with the interface between the various layers of the semiconductor structure 100 of FIG. 1A. The vertical axis in Figure 1B is energy, with the higher energy level being vertically above the lower energy level. It should be noted that FIG. 1B illustrates a non-limiting example of the conduction band energy levels of the example semiconductor structure 100. Thus, the relative position of the horizontal conduction band relative to the energy level can vary with at least the composition and doping of the individual semiconductor layers, the compositional range of the individual semiconductor layers (the range is as described above). Thus, FIG. 1B can be used to understand the relative differences in the energy levels of the conduction bands 128 of the various layers of the semiconductor structure 100. As shown in FIG. 1B, the energy level of the conduction band 128 of the well layer 114 can be lower than the energy level of the conduction band 128 of the other layers of the semiconductor structure 100.

As is known in the art, for a Group III nitride layer, such as InGaN, the energy level of the conduction band 128 varies with a variety of variables including, but not limited to, indium content and dopant content. The well layer 114 and the barrier layer 116 may be formed to be one and otherwise configured such that the energy level of the conductive strip 128 of the well layer 114 is lower than the energy level of the conductive strip 128 of the barrier layer 116. Thus, during operation of the illuminating device made of semiconductor structure 100, charge carriers (e.g., electrons) may accumulate in well layer 114, and barrier layer 116 may be used to prevent charge carriers (e.g., electrons) from migrating across active region 106. Thus, in some embodiments, the indium content in each well layer 114 can be higher than the indium content in each barrier layer 116. For example, the difference between the indium content in each well layer 114 and the indium content in each barrier layer 116 can be greater than or equal to about 0.05 (ie, wb) 0.05), or in some embodiments, may be greater than or equal to about 0.20 (ie, wb 0.20). In some embodiments, the dopant concentration in the barrier layer 116 can be different than the dopant concentration in the well layer 114. High doping concentrations can cause defects in the InGaN crystal structure, and such defects can cause non-radiative bonding of electron-hole pairs. In some embodiments, the dopant concentration in the well layer 114 can be lower than the dopant concentration in the barrier layer 116 to reduce the rate of non-radiative bonding of the electron-holes in the well layer 114 (as opposed to The non-radiative bonding rate of electron-hole pairs in the barrier layer 116). In other embodiments, the dopant concentration in the barrier layer 116 can be higher than the dopant concentration in the well layer 114.

As illustrated in FIG. 1B, the energy barrier provided by the electron blocking layer 108 can be directly adjacent to the electron blocking layer 108 by the electron blocking layer 108 and the cap layer 120 (or on the side of the electron blocking layer 108 closest to the active region 106). The other layers of the conduction band 128 are caused by the difference in energy levels. The energy barrier height can be varied by changing the composition of the electron blocking layer 108. For example, as illustrated in FIG. 1B, a conductive level 130 (shown by the solid line) can illustrate a conduction band level that at least substantially comprises an electron blocking layer of GaN (but in which a dopant is present). As illustrated by the conduction band level 132 (shown as a dashed line), it can be formed by at least substantially including In _e Ga _1-e N (where 0.01 e The electron blocking layer of 0.02) reduces the conduction band energy level within the electron blocking layer relative to the GaN electron blocking layer. In other embodiments, as illustrated by the conduction band level 134 (shown as a dashed line), it may be formed by at least substantially comprising Al _e Ga _1-e N (where 0.01 e An electron blocking layer of 0.20) increases the conduction band level relative to the GaN electron blocking layer. Thus, the conduction band energy levels within the electron blocking layer can be varied to provide the desired conduction band offset between the electron blocking layer 108 of the semiconductor structure 100 and the other Group III nitride layers.

In embodiments of the semiconductor structure 100 in which the electron blocking layer 108 has a superlattice structure comprising alternating layers of different materials, the conduction band energy levels can be increased and decreased similarly to the periodic manner, as illustrated in Figure 136 of FIG. 1B. Explained. For example, the electron blocking layer 108 may have a superlattice structure including alternating layers of GaN 138 and Al _e Ga _1-e N 140, where 0.01 e 0.20, or, the superlattice structure may comprise alternating layers of GaN and In _e Ga _1-e N, wherein 0.01 e 0.02. The magnitude of the conduction band energy level shift between alternating layers of different materials can be selected depending on the compositional difference between the GaN layer and the Al _e Ga _1-e N or In _e Ga _1-e N layer.

The semiconductor structure of the present invention may further comprise an electron stop layer disposed between the active region of the semiconductor structure and the GaN substrate layer of the semiconductor structure. The electron-sustaining layer may comprise an n-doped Group III nitride material, wherein the energy band edge energy level of the conduction band is relatively higher than the energy band of the GaN substrate layer and/or the conduction band of the In _sp Ga _1-sp N substrate layer. The edge, which can be used to further confine the electrons within the active area and prevent the carrier from overflowing from the active area, thereby improving the uniformity of the carrier within the active area.

By way of non-limiting example, FIGS. 2A and 2B illustrate an embodiment of a semiconductor structure 200 that includes such an electron stop layer 202. The semiconductor structure 200 is similar to the semiconductor structure 100 and includes an active region 106 comprising one or more InGaN well layers 114 and one or more InGaN barrier layers 116, as previously described for the semiconductor structure 100. The semiconductor structure 200 also includes a base layer 102, a spacer layer 118, a cap layer 120, an electron blocking layer 108, a p-type body layer 110, and a p-type contact layer 104, as previously described for the semiconductor structure 100. An electron stop layer 202 of the semiconductor structure 200 is disposed between the GaN base layer 112 and the spacer layer 118.

The electron stop layer 202 comprises a Group III nitride. As a non-limiting example, the electron stop layer 202 can comprise n-doped AlGaN. For example, in some embodiments, the electron suspend layer 202 can comprise at least substantially Al _st Ga _1-st N (but with dopants present therein), wherein 0.01 St 0.20. In other embodiments, the electron stop layer 202 can have a superlattice structure, as illustrated by inset 204, which includes an Al _st Ga _1-st N layer 206 (of which 0.01 St 0.20) alternating layers with GaN layer 208. Semiconductor structure 200 can include any number (eg, from about one (1) to about twenty (20)) alternating layers of Al _St Ga _1-st N layer 206 and GaN layer 208. Layers 206 and 208 in the superlattice structure can have an average layer thickness of from about one nanometer (1 nm) to about one hundred nanometers (100 nm).

The electron stop layer 202 may be doped with one or more dopants selected from the group consisting of ruthenium and osmium. The concentration of one or more dopants in the electron stop layer 202 can range from about 0.1e ¹⁸ cm ^-3 to 20e ¹⁸ cm ^-3 . In some embodiments, the electron stop layer 202 can have an average layer thickness T _{st in the} range of from about one nanometer (1 nm) to about fifty nanometers (50 nm).

2B is a simplified conduction band diagram and illustrates the relative energy levels of conductive strips 228 of various materials in semiconductor structure 200. As shown in FIG. 2B, in the embodiment of the semiconductor structure 200 of FIG. 2A, the energy level of the conductive strip 228 in at least a portion of the electron stop layer 202 of the semiconductor structure 200 (FIG. 2B) is relatively higher than that in the GaN base layer 112. The energy level of the conduction band 200 and/or the energy level of the conduction band 228 within the spacer layer 118. In the embodiment where the electron stop layer 202 comprises a superlattice structure as illustrated in the inset 210 of FIG. 2B (the superlattice structure comprises an Al _st Ga _1-st N layer 206 (of which 0.01 St 0.20) and alternating layers of GaN layer 208), the conduction band energy levels can be varied in a periodic manner.

In other embodiments, the semiconductor structure of the present invention can include one or more layers of material between the active region and the GaN substrate layer, the layers of materials being used to facilitate fabrication of the semiconductor structure. For example, in some embodiments, the semiconductor structure of the present invention and one or more of the light-emitting devices fabricated therefrom can include one or more strain relief layers disposed between the active region and the GaN substrate layer, wherein The strain relief layers are configured and configured to receive a lattice strain of a crystal structure of each layer of the semiconductor structure between the GaN base layer and the p-type contact layer, the layers being layer-by-layer Crystal growth

By way of non-limiting example, FIGS. 3A and 3B illustrate an embodiment of a semiconductor structure 300 including the strain relief layer 302. Semiconductor structure 300 is similar to semiconductor structure 100 and includes an active region 106 comprising one or more InGaN well layers 114 and one or more InGaN barrier layers 116, as previously described for semiconductor structure 100. The semiconductor structure 300 also includes a base layer 102, a spacer layer 118, a cap layer 120, an electron blocking layer 108, a p-type body layer 110, and a p-type contact layer 104, as previously described for the semiconductor structure 100. A strain relief layer 302 of the semiconductor structure 300 is disposed between the GaN base layer 112 and the spacer layer 118. In the embodiment of FIGS. 3A and 3B, the strain relief layer 302 is disposed directly between the GaN base layer 112 and the In _sp Ga _1-sp N spacer layer 118.

The strain relief layer 302 can comprise a Group III nitride. As a non-limiting example, strain relief layer 302 can have a superlattice structure, as illustrated by inset 304, which includes an In _sra Ga _1-sra N layer 306 (of which 0.01 Sra 0.10) with In _srb Ga _1-srb N layer 308 (of which 0.01 Srb Alternate layers of 0.10). In addition, sra can be larger than srb. Semiconductor structure 300 can include any number (eg, from about one (1) to about twenty (20)) alternating layers of In _sra Ga _1-sra N layer 306 and In _srb Ga _1-srb N layer 308. Layers 306 and 308 in the superlattice structure can have an average layer thickness of from about one nanometer (1 nm) to about twenty nanometers (20 nm).

The strain relief layer 302 may be doped with one or more dopants selected from the group consisting of ruthenium and osmium. The concentration of one or more dopants in the strain relief layer 302 can range from about 0.1e ¹⁸ cm ^-3 to 20e ¹⁸ cm ^-3 . In some embodiments, the strain relief layer 302 can have an average layer thickness ranging from about one nanometer (1 nm) to about fifty nanometers (50 nm).

FIG. 3B is a simplified conduction band diagram and illustrates the relative energy levels of conductive strips 328 of various materials in semiconductor structure 300. As shown in FIG. 3B, in the embodiment of the semiconductor structure 300 of FIG. 3A, the energy level of the conduction band 328 in at least a portion of the strain relief layer 302 of the semiconductor structure 300 (FIG. 3A) can be relatively lower than the GaN substrate layer 112. The energy level of the conductive strip 328 and/or the energy level of the conductive strip 328 within the spacer layer 118. In other embodiments, the energy level of the conduction band 328 in at least a portion of the strain relief layer 302 of the semiconductor structure 300 (FIG. 3A) can be relatively higher than the energy level and/or spacer layer of the conduction band 328 within the InGaN substrate layer 112. The energy level of the conduction band 328 within 118. The implementation of the strain relief layer 302 comprising a superlattice structure as illustrated by inset 310 of FIG. 3B (the superlattice structure comprising alternating layers of In _sra Ga _1-sra N layer 306 and In _srb Ga _1-srb N 308) In an example, the conduction band energy level can be varied in a periodic manner.

4A and 4B illustrate yet another embodiment of a semiconductor structure 400 of the present invention. Semiconductor structure 400 is similar to semiconductor structure 100 and includes an active region 406 comprising one or more InGaN well layers 114 and one or more InGaN barrier layers 116, as previously described for semiconductor structure 100. The semiconductor structure 400 also includes a base layer 102, a spacer layer 118, a cap layer 120, an electron blocking layer 108, a p-type body layer 110, and a p-type contact layer 104, as previously described for the semiconductor structure 100. The active region 406 of the semiconductor structure 400 further includes other GaN barrier layers 402. Other GaN barrier layers 402 may each be disposed between the InGaN well layer 114 and the InGaN barrier layer 116. Other GaN barrier layers 402 can be used to further confine electrons within the well layer 114, where electrons are more likely to coincide with the holes in the well layer 114 and increase the radiation transmitter rate.

In some embodiments, each GaN barrier layer 402 can be doped with one or more dopants selected from the group consisting of ruthenium and osmium. For example, the concentration of one or more dopants within the GaN barrier layer 402 can range from about 1.0e ¹⁷ cm ^-3 to 50e ¹⁷ cm ^-3 . In some embodiments, each GaN barrier layer 402 can have an average layer thickness T _b2 ranging from about one-half nanometer (0.5 nm) to about twenty nanometers (20 nm).

FIG. 4B is a simplified conduction band diagram and illustrates the relative energy levels of conductive strips 428 of various materials in semiconductor structure 400. As shown in FIG. 4B, in the embodiment of semiconductor structure 400 of FIG. 4A, the energy level of conductive strip 428 within GaN barrier layer 402 (FIG. 4A) can be relatively higher than the conductivity of conductive strip 428 within InGaN barrier layer 116. The level is higher than the energy level of the conduction band 428 within the InGaN well layer 114.

5A and 5B illustrate other embodiments of the semiconductor structure 500 of the present invention. In such embodiments, the active region 506 can be formed by a method as disclosed in U.S. Patent Application Serial No. 13/362,866, filed on Jan. 31, 2012, in the name of Semiconductor structure 500 is similar to semiconductor structure 100 and includes an active region 506 comprising one or more InGaN well layers 514 and one or more InGaN barrier layers 516, as previously described for semiconductor structure 100. The semiconductor structure 500 also includes a base layer, a spacer layer, a cap layer, an electron blocking layer, a p-type body layer 100, and a p-type contact layer, as previously described for the semiconductor structure 100. For the sake of clarity, only the layers surrounding the active region 506 are illustrated, and such layers may include spacer layer 118 and cap layer 120 as well as GaN underlayer 112 and electron blocking layer 108, as appropriate. If the semiconductor structure 500 eliminates the layer that is present as appropriate, the active region 506 can be disposed directly between the GaN underlayer 112 and the electron blocking layer 108.

The active region 506 of the semiconductor structure 500 is similar to the active region of the semiconductor structure 100, but further includes two or more InGaN barrier layers, wherein the bandgap between subsequent barrier layers can be self-examined as viewed in Figures 5A and 5B. The right to left (i.e., the direction extending from the cap layer 120 to the spacer layer 118) is gradually enhanced. This configuration of the active region 506 in the semiconductor structure 500 can help confine the charge carriers within the active region 500 by preventing the carrier from overflowing from the active region 506, thereby being made of the semiconductor structure 500. Increased efficiency of the illuminating device Big.

The barrier region 516 _AC structural configuration and material composition may be selected such that each of the barrier region 516 _AC having respective bandgap energy 550 _AC, wherein the band gap energy of various conductive line 500 by the band energy of the semiconductor material 528 and a semiconductor structure comprising The energy difference between the valence band energy 552 is obtained. _A band gap of the first barrier region 516 can be 550 _A 516 _B may be less than the band gap energy of the second barrier region 550 _B, the second barrier region 516 and the band gap energy of 550 _{B B C} 516 may be smaller than the band region of the third barrier The gap energy is 550 _C as shown in the energy band diagram of Figure 5B. Further, each band gap energy of the quantum well region is substantially equal to 552 _AC and may be less than the respective barrier regions 516 _AC bandgap energy 550 _AC.

In this configuration, the hole energy barrier 554 _A between the first quantum well 514 _A and the second quantum well 514 _B may be smaller than the hole energy barrier between the second quantum well 514 _B and the third quantum well 514 _C 554 _B. In other words, the cavity energy barrier 554 _AC across the barrier region 516 _AC may gradually increase across the active region 506 in a direction extending from the cap layer 120 to the spacer layer 118. The hole energy barrier 554 _AC is the energy difference across the valence band 552 at the interface between the quantum well region 514 _AC and the adjacent barrier region 516 _AC . As a result of the increase in the hole energy barrier 554 _{AC of the} barrier layer 516 _AC from the cap layer 120 to the spacer layer 108, the uniformity of the hole distribution in the active region 506 can be enhanced, thereby improving the fabrication by the semiconductor 500. The efficiency of the illumination device during operation.

As mentioned above, the material composition and structure of the barrier region 516 _AC configuration may be selected such that each barrier region 516 _AC having different respective band gap energy 550 _AC. As a non-limiting example, each barrier region 516 _AC can comprise a ternary III-nitride material, such as In _b3 Ga _1-b3 N, where b3 is at least about 0.01. In making the barrier region 516 _{AC b3} Ga _1-b3 N indium content is reduced (i.e., decrease the value of b3) may increase the band gap of 516 _AC energy barrier region. Accordingly, the second barrier region 516 _B may have an indium content lower than the first barrier region 516 _A , and the third barrier region 516 _C may have an indium content lower than the second barrier region 516 _B . Additionally, barrier region 516 _AC and well region 514 _AC may be doped and may have an average layer thickness as previously described for semiconductor structure 100.

As mentioned above, in accordance with an embodiment of the present invention, the active area 106 (Fig. 1A) can be packaged At least one InGaN well layer and at least one InGaN barrier layer are included, and in some embodiments, may comprise at least substantially InGaN (eg, may consist essentially of InGaN, but with dopants present therein). Most of the previously known luminescent device structures comprising InGaN well layers include GaN (at least substantially free of indium) barrier layers. The conduction band energy level difference between the InGaN well layer and the GaN barrier layer is relatively high. According to the teachings in the art, the limitation of the charge carriers in the well layer can be improved and the efficiency of the LED structure can be improved. However, prior art structures and methods may result in reduced device efficiency due to carrier flooding and piezoelectric polarization.

In the theory of carrier overflow, one or more quantum well layers can be similar to a water bucket, and its ability to capture and accommodate the injected carriers is attenuated when the carrier injection is high. When the injected carrier is not captured or contained, it overflows the active area and is wasted, resulting in a decrease in device efficiency. The band offset of the prior art structure comprising the InGaN quantum well and the GaN barrier layer (ie, the conduction band energy level difference between the quantum well and the barrier) is significantly larger than the band offset substantially including the active region of InGaN, as in the embodiments herein. Said in the middle. The reduction in band offset in the structures described herein allows the implanted carriers to be more effectively distributed over the quantum well regions of the active region, thereby increasing the efficiency of the illumination device made from the semiconductor structures described herein.

In addition, due to the lattice mismatch between the InGaN well layer and the GaN barrier layer, relatively strong piezoelectric polarization occurs in the active region of the illuminating device structure. In the active region of the structure of the illuminating device, the piezoelectric polarization reduces the overlap between the wave function of the electron and the wave function of the hole. As shown, for example, in JHSon and JLLee, Numerical Analysis of Efficiency Droop Induced by Piezoelectric Polarization in InGaN/GaN Light-Emitting Diodes , Appl. Phys. Lett. 97, 032109 (2010), piezoelectric polarization is used in such illumination devices. Structures such as LEDs can cause so-called "efficiency degradation." The decrease in efficiency is a decrease (decrease) in the internal quantum efficiency (IQE) curve of the LED structure as the current density increases.

Embodiments of light emitting structures, such as the LED structures of the present invention, can reduce or overcome the previously known problems of LED structures having InGaN well layers and GaN barrier layers, such problems It is related to lattice mismatch, carrier overflow, piezoelectric polarization and efficiency degradation. Embodiments of the LEDs of the present invention, such as LED structures made from the semiconductor structure 100 of FIGS. 1A and 1B, can be configured and have an energy band structure that can be designed such that the active region 106 exhibits reduced piezoelectric polarization effects. And the overlap of the electronic wave function and the hole wave function increases. Thus, a light emitting device such as an LED can exhibit improved uniformity of charge carriers across the active region 106 and a reduced efficiency as the current density increases.

These advantages, which may be obtained via embodiments of the present invention, are further discussed below with reference to Figures 10A and 10B, 11A-11E, 12A and 12B, and 13A-13E. 10A and 10B illustrate an embodiment of an LED 556 similar to previously known LEDs. The LED 556 includes an active region 558 that includes five (5) InGaN well layers 562 and a GaN barrier layer 564 disposed between the InGaN well layers 562. The LED 556 also includes a base layer 560, a first spacer layer 566, a second spacer layer 568, an electron blocking layer 570, and an electrode layer 572. In LED 556, InGaN well layer 562 comprises In _0.18 Ga _0.82 N layers each having an average layer thickness of about two and a half nanometers (2.5 nm). The barrier layer 564 includes a GaN layer that can have an average layer thickness of about ten nanometers (10 nm). The base layer 560 comprises a doped GaN layer having an average layer thickness of about three hundred and twenty-five nanometers (325 nm), which is doped with a 矽n-type concentration of about 5e ¹⁸ cm ^-3 . The first spacer layer 566 can comprise undoped GaN having an average layer thickness of about twenty-five nanometers (25 nm). The second spacer layer 568 can also include undoped GaN having an average layer thickness of about twenty-five nanometers (25 nm). The electron blocking layer may comprise p-doped AlGaN. The electrode layer 572 may comprise a doped GaN layer, which may have an average layer thickness of about one hundred and twenty-five nanometers (125 nm), which is doped with magnesium p-type at a concentration of about 5e ¹⁷ cm ^-3 . Figure 10B is a simplified conduction band diagram similar to Figure 1B and illustrating the relative energy level difference (in the energy band diagram) of the conductive strips 574 of the different materials of the various layers of LED 556 of Figure 10A. The vertical dashed line of Figure 10B is aligned with the interface between the various layers in LED 556 of Figure 10A.

As is known in the art, the 8 x 8 Kane model disclosed in, for example, SLC Huang and CSChang, k ‧ p Method for Strained Wurtzite Semiconductors , Phys. Rev. B 54, 2491 (1996) can be used to characterize Group III nitride materials ( Structures of valence bands such as GaN and InGaN. It can be assumed that the division of the heavy, light and split branches of the valence band located in the center of the Brillouin zone is independent of the built-in electric field. Therefore, the valence band can be obtained from the solution of coupled Poisson and transport equations. It can be assumed that the wave functions of electrons and holes are in the following form: u _n Ψ _v . Exp( k _n . r ), and u _{p , s} Ψ _{v , s} . Exp( k _p . r ), where u _n and u _p,s are the Bloch amplitudes of electrons and holes corresponding to the center of the Brillouin zone, k _n and k _p are coplanar quasi-torque vectors, Ψ _v and Ψ _{v , s} is the envelope function, and the subscript “s” can be a heavy hole (hh), a light hole (lh) or a split (so) hole. One of the electron and hole envelope functions, Schrödinger equations, is:

among them and For the effective potential of electrons and holes in quantum wells, E _v and E _{v, s} are electron and hole energy levels, and and It is the effective mass of electrons and holes in the direction of epitaxial growth. By solving the above Schrödinger equation under the corresponding boundary conditions, the overlap integral between the electron and the hole wave function is obtained by:

As described in SLChuang, Physics of Phonic Devices , 2nd Edition (Wiley, New Jersey, 2009), the rate of electron coincidence of electrons and holes can be obtained from: Where B is the radiation coincidence coefficient, n is the electron concentration, p is the hole concentration, and F _n -F _{p is the} quasi-Fermi level separation. The electron and hole concentration and the quasi-Fermi level difference vary with the position across the active area of the LED. The maximum rate of radiation coincidence in any quantum well can be identified and considered as the peak radiation coincidence rate of the respective quantum well.

Figure 11A is a graph illustrating the band edge energy calculations for the conduction band 574 and the valence band 576 of the LED 550 of Figures 10A and 10B (where the current applied across the LED 556 is zero) and the interaction with the substrate layer 560. The relationship of the area 558 relative to the surface across the position of the LED 556 (in nanometers). 11B is a graph similar to FIG. 11A, but FIG. 11B illustrates the conduction band of the LED 556 of FIGS. 10A and 10B when the current density applied across the LED 556 is one hundred and twenty-five amps (125 A/cm ² ) per square centimeter. The calculated energy of the edge energy of 574 and the price band 576. 11C is a graph illustrating the intensity of each of the five quantum well layers 562 of the LED 556 when the current density applied across the LED 550 is one hundred and twenty-five amps (125 A/cm ² ) per square centimeter. Calculate the relationship between the value and the wavelength. From the perspective of Figures 10A and 10B, QW1 is the leftmost quantum well layer 562, and QW5 is the rightmost quantum well layer 562. Figure 11D illustrates the relationship between the calculated injection efficiency of LED 556 and the applied current density. As shown in FIG. 11D, the LED 550 exhibited an implantation efficiency of about 75.6% at a current density of 125 A/cm ² . Figure 11E illustrates the relationship between the calculated internal quantum efficiency (IQE) of LED 556 and the applied current density. As shown in FIG. 11E, LED 556 exhibited an internal quantum efficiency of about 45.2% at a current density of 125 A/cm ² . As also shown in FIG. 11E, the internal quantum efficiency of the LED 556 can be reduced from more than 50% (when the applied current density is about 20 A/cm ² ) to less than 40% (the applied current density is 250 A/cm ² ). As discussed previously, this decline in IQE is known in the art as a drop in efficiency.

Table 1 below shows the wave function overlap and peak radiation coincidence rate calculated for each of the five quantum well layers 562 of LEDs 550 of Figures 10A and 10B.

As can be seen from Figure 11C and Table 1 above, the radiation coincidence is mainly from the last well 562 (closest to the p-doped side, or anode), and in LED 556, it is the fifth quantum well (ie QW5). Furthermore, as shown in FIG. 11E, LED 556 exhibits a decrease in efficiency, which is due, at least in part, to piezoelectric polarization, which was previously discussed herein due to the use of InGaN well layer 562 and GaN barrier layer 564. Caused by.

An LED embodiment of the present invention comprising an active region comprising at least one InGaN well layer and at least one InGaN barrier layer, such as active region 106 of LED 100, can exhibit improved uniformity of radiation coincidence occurring in the well layer and can exhibit reduced The efficiency is reduced. Referring to Figures 12A and 12B, and Figures 13A through 13E below, a comparison of LED embodiments of the present invention with LEDs 550 is provided.

12A and 12B illustrate another example of an embodiment of the LED 600 of the present invention. The LED 600 includes an active region 106 that includes five (5) InGaN well layers 114 and an InGaN barrier layer 116 disposed between the InGaN well layers 114. InGaN well layer 114 and InGaN barrier layer 116 may be as described above with respect to semiconductor structure 100 with reference to FIGS. 1A and 1B. The LED 600 also includes a base layer 112, a first spacer layer 118, a cap layer 120, and an InGaN electrode layer 104. In LED 600, InGaN well layer 114 comprises In _0.18 Ga _0.82 N layers each having an average layer thickness of about two and a half nanometers (2.5 nm). The barrier layer 116 comprises an In _0.08 Ga _0.92 N layer and may each have an average layer thickness of about ten nanometers (10 nm). The base layer 112 comprises a doped In _0.05 Ga _0.95 N layer having an average layer thickness of about three hundred nanometers (300 nm), which is doped with a 矽n-type concentration of about 5e ¹⁸ cm ^-3 . The first spacer layer 118 can comprise undoped In _0.08 Ga _0.92 N having an average layer thickness of about twenty-five nanometers (25 nm). Cap layer 120 may also comprise undoped In _0.08 Ga _0.92 N having an average layer thickness of about twenty-five nanometers (25 nm). Electrode layer 104 can comprise a doped In _0.05 Ga _0.95 N layer having an average layer thickness of about one hundred and fifty nanometers (150 nm), which is p-doped with magnesium at a concentration of about 5e ¹⁷ cm ^-3 . Figure 12B is a simplified conduction band diagram illustrating the relative energy level difference (in the energy band diagram) of the conductive strips 602 of the different materials of the various layers of LED 600 of Figure 12A.

Figure 13A is a graph illustrating the band edge energy calculations for the conduction band 602 and the valence band 604 of the LEDs 600 of Figures 12A and 12B (where the current applied across the LED 600 is zero) and the interaction with the substrate layer 112. The relationship of the area 106 relative to the surface across the position of the LED 600 (in nanometers). 13B is a graph similar to FIG. 13A, but FIG. 13B illustrates the conduction band of the LED 600 of FIGS. 12A and 12B when the current density applied across the LED 600 is one hundred and twenty-five amps (125 A/cm ² ) per square centimeter. The calculated energy of the edge energy of 602 and the price band 604. Figure 13C is a graph illustrating the intensity of each of the five quantum well layers 108 of the LED 600 when the current density applied across the LED 600 is one hundred and twenty-five amps (125 A/cm ² ) per square centimeter. Calculate the relationship between the value and the wavelength. From the perspective of Figures 12A and 12B, QW1 is the leftmost quantum well layer 108 and QW5 is the rightmost quantum well layer 108. Figure 13D illustrates the relationship between the calculated injection efficiency of LED 600 and the applied current density. As shown in FIG. 13D, the LED 600 can exhibit an implantation efficiency of about 87.8% at a current density of 125 A/cm ² and can exhibit at a current density in the range of about 20 A/cm ² to about 250 A/cm ² . At least about 80% of the carrier injection efficiency. Figure 13E illustrates the relationship between the calculated internal quantum efficiency (IQE) of LED 600 and the applied current density. As shown in Figure 13E, LED 600 can exhibit an internal quantum efficiency of about 58.6% at a current density of 125 A/cm ² . As also shown in Figure 13E, the internal quantum efficiency of LED 600 can be maintained between about 55% and about 60% at a current density in the range of from about 20 A/cm ² to about 250 A/cm ² . Thus, LED 600 exhibits minimal efficiency degradation, and the efficiency degradation is significantly less than the efficiency degradation exhibited by LED 500 (LED 500 does not conform to embodiments of the present invention).

Table 2 below shows the wave function overlap and peak radiation coincidence rates calculated for each of the five quantum well layers 108 of LEDs 600 of Figures 12A and 12B.

As can be seen from FIG. 13C and Table 2 above, the radiation overlap across well layer 108 of LED 600 is more uniform than well layer 508 in LED 500.

The LEDs 550 of Figures 10A and 10B and the LEDs 600 of Figures 12A and 12B were modeled using SiLENSe software, which is commercially available from STR Group, Inc. SiLENSe soft The body is also used to generate the graphs of Figures 11A through 11E and Figures 13A through 13E, and to obtain the data listed in Tables 1 and 2.

According to some embodiments of the present invention, LED at a current density within the range of about 20A / cm ² to about 250A / cm ² it may exhibit internal quantum efficiency of at least about 45% of at about 20A / cm ² to about 250A / cm ² An internal quantum efficiency of at least about 50% can be exhibited at current densities within the range, or at least about 55% of internal quantum efficiency can be exhibited at current densities ranging from about 20 A/cm ² to about 250 A/cm ² . Moreover, the LED can exhibit at least substantially constant carrier injection efficiency at current densities ranging from about 20 A/cm ² to about 250 A/cm ² . In some embodiments, LEDs of the present invention can exhibit a carrier injection efficiency of at least about 80% at current densities ranging from about 20 A/cm ² to about 250 A/cm ² .

A non-limiting example of a method that can be used to fabricate a semiconductor structure and a light-emitting device (such as an LED) of an embodiment of the present invention is briefly described below with reference to FIGS. 6C through 6D, and is manufactured by such methods with reference to FIGS. 7 and 8. An example of a light emitting device.

Referring to FIG. 6C, a growth template 113 (manufactured as previously described above) may be disposed within the deposition chamber, and epitaxially grown on the one or more seed layers 656 of the growth template 113 may comprise a group III nitride material. The layer, commonly referred to as growth stack 682 (see Figure 6D). It should be noted that while the seed layer is illustrated as one or more Ill-nitride material islands, in some embodiments, the seed layer may comprise a continuous film on the support substrate 658.

Figure 6D illustrates a semiconductor structure 680 comprising a growth template 113 comprising two seed layers 656, each layer having a plurality of layers of the semiconductor structure 100 of Figures 1A and 1B deposited thereon. In detail, the GaN underlayer 112 of the semiconductor structure 100 is directly epitaxially deposited on each of the seed layer structures 656, and the InGaN spacer layer 118, the InGaN well layer 114, and the InGaN barrier layer are deposited in the epitaxial manner on the growth template 112. 116, InGaN cap layer 120, electron blocking layer 108, p-type body layer 110 and p-type contact layer 104.

The various layers of semiconductor structure 680 comprising growth stack 682 can be deposited in a single deposition chamber using, for example, a metal organic chemical vapor deposition (MOCVD) method and system, ie, There is no need to load or unload the growth stack during deposition. The pressure within the deposition chamber can be reduced to between about 50 milliTorr (mTorr) and about 500 milliTorr. The pressure within the reaction chamber during the deposition process can be increased and/or decreased during deposition of the growth stack 682, and thus can be tailored to the particular layer being deposited. As a non-limiting example, during deposition of the GaN substrate layer 112, the spacer layer 118, the one or more wells 114/barrier layer 116, the cap layer 120, and the electron barrier layer 108, the pressure within the reaction chamber can range from about 50 mTorr to about Within 500 mTorr, and in some embodiments may be equal to about 440 mTorr. For p-type body layer 110 and p-type contact layer 104 deposition, the pressure within the reaction chamber can range from about 50 millitorr to about 250 millitorr, and in some embodiments can be equal to about 100 millitorr.

The growth template 113 can be heated in the deposition chamber to a temperature between about 600 ° C and about 1,000 ° C. Metal-organic precursor gases and other precursor gases (and optionally carrier gases and/or purge gases) may then be caused to flow through the deposition chamber and through one or more seed layers 656 of the growth template 113. The metal organic precursor gas may react, decompose, or react and decompose the Group II nitride layer (such as an InGaN layer) by epitaxial deposition on the growth template 113.

As a non-limiting example, trimethylindium (TMI) can be used as the metal organic precursor of InGaN of InGaN, and triethylgallium (TMG) can be used as the metal organic precursor of gallium of InGaN, and triethylaluminum can be used. (TMA) is a metal organic precursor of AlGaN, and ammonia can be used as a precursor of nitrogen of the group III nitride layer. When an n-type doped Group III nitride is required, SiH ₄ can be used as a precursor to introduce germanium into InGaN, and when a p-type doped group III nitride is required, Cp ₂ Mg (bis(cyclopentadienyl) can be used. Magnesium) acts as a precursor to introduce magnesium into the Group III nitride. It may be advantageous to tailor the ratio of indium precursor (eg, trimethylindium) to gallium precursor (eg, triethylgallium), which allows the concentration of indium incorporated into InGaN to be close to that of indium in InGaN at deposition temperatures. Saturation point. Since InGaN is epitaxially grown by controlling the growth temperature, the percentage of indium incorporated into InGaN can be controlled. At relatively low temperatures, the amount of indium incorporated is relatively high, and at relatively high temperatures, the amount of indium incorporated is relatively low. As a non-limiting example, the InGaN well layer 108 can be deposited at temperatures ranging from about 600 °C to about 950 °C.

The deposition temperatures of the various layers of the growth stack 100 can be increased and/or decreased during the deposition process and can therefore be tailored to the particular layer being deposited. As a non-limiting example, during deposition of GaN substrate layer 112, p-type body layer 110, and p-type contact layer 104, the deposition temperature may range from about 600 °C to about 950 °C, and in some embodiments may be equal to about 900. °C. The growth rate of the GaN base layer 112, the p-type body layer 110, and the p-type contact layer 104 may range from about one nanometer (1 nm/min) per minute to about fifty nanometers (50 nm/min) per minute, and In some embodiments, the growth rate of GaN substrate layer 112, p-type body layer 110, and p-type contact layer 104 can be equal to about 6 nanometers (6 nm/min) per minute.

In other non-limiting example embodiments, during deposition of the spacer layer 118, the one or more well layers 114, the one or more barrier layers 116, the cap layer 120, and the electron blocking layer 108, the deposition temperature may be between about 600 ° C and It is in the range of about 950 ° C, and in some embodiments may be equal to about 750 ° C. The growth rate of the spacer layer 118, the one or more well layers 114, the one or more barrier layers 116, the cap layer 120, and the electron blocking layer 108 may range from about one nanometer (1 nm/min) per minute to about thirty minutes per minute. In the range of nanometers (30 nm/min), and in some embodiments, the growth rate of the spacer layer 118, the one or more wells 114/barrier layer 116, the cap layer 120, and the electron blocking layer 108 may be equal to about one nanometer per minute. Meter (1 nm/min).

In embodiments that include depositing an InGaN layer, the flow rate ratio of the precursor gas can be selected to yield a high quality InGaN layer. For example, a method of forming an InGaN layer of semiconductor structure 100 can include selecting a gas ratio to obtain one or more InGaN layers that have a lower defect density, are substantially free of strain relaxation, and are substantially free of surface pits.

In a non-limiting example, the flow ratio (%) of trimethylindium (TMI) to triethylgallium (TMG) can be defined as:

And this flow rate ratio can be increased and/or decreased during the deposition process and can therefore be The specific InGaN layer is customized. As a non-limiting example, the flow rate ratio during deposition of the p-type body layer 110 can range from about 50% to about 95%, and in some embodiments can be equal to about 85%. In other embodiments, the flow rate ratio during deposition of the spacer layer 118, the one or more barrier layers 116, and the cap layer 120 can range from about 1% to about 50%, and in some embodiments can be equal to about 2%. . In other embodiments, the flow rate ratio during deposition of one or more quantum well layers 114 may range from about 1% to about 50%, and in some embodiments may be equal to about 30%.

The growth template 113 can be rotated in the deposition chamber during deposition as appropriate. As a non-limiting example, the growth template 113 can be rotated in the deposition chamber at a rotational speed between about 50 revolutions per minute (RPM) and about 1500 revolutions per minute (RPM) during the deposition process, and in some embodiments can be equal to each The rotation of about 450 revolutions (RPM) in minutes. During deposition, the rotational speed during deposition can be increased and/or reduced, and thus can be tailored to the particular layer being deposited. As a non-limiting example, during deposition of the GaN substrate layer 112, the spacer layer 118, the one or more well layers 114, the one or more barrier layers 116, the cap layer 120, and the electron barrier layer 108, the rotational speed of the growth template may be between It is in the range of about 50 revolutions per minute (RPM) and about 1500 revolutions per minute (RPM), and in some embodiments can be rotated at a speed equal to about 440 revolutions per minute (RPM). During deposition of the p-type body layer 110 and the p-type contact layer 104, the rotational speed of the growth template 113 can range from about 50 revolutions per minute (RPM) to about 1500 revolutions per minute (RPM), and in some embodiments can be equal to Rotate at a speed of approximately 1000 revolutions per minute (RPM).

In an embodiment of the semiconductor structure of the present invention comprising a deposited Group III nitride and in particular an InGaN layer, strain energy deposited epitaxially on the growth template 113, comprising one or more InGaN layers of the growth stack 682 can affect thereby The efficiency of a light-emitting device made of a semiconductor structure. In some embodiments, the total strain energy generated within growth stack 682 can be related to the efficiency of the semiconductor structures of the present invention (as defined by internal quantum efficiency (IQE)).

In more detail, the strain energy stored in the nth layer of InGaN is proportional to the average total thickness T _{n of} the nth layer of InGaN and the indium concentration % In _{n of} the nth layer of InGaN. In addition, the total strain energy stored in the plurality of InGaN layers including the growth stack 682 is proportional to the sum of the average total thickness T _n of each InGaN layer and the indium concentration % In _n in each InGaN layer, thus including the InGaN layer of the growth stack 702. The total strain energy within can be estimated using the following relationship: total strain energy (au) Σ(% In _n × T _n ), wherein the average total thickness T _n of the nth layer is expressed in nanometers (nm), and the indium concentration % In _{n in} the nth InGaN layer is expressed by atomic percentage. For example, if the nth layer of InGaN has an average total thickness T _{n of} one hundred and fifty nanometers (150 nm) and an indium concentration % In _{n of} 2.0 at%, the strain energy in the nth layer of InGaN can be about 300a. u. Proportional (300=150(2)).

Figure 9 illustrates a graph 900 showing the relationship between IQE (a.u.) and total strain energy (a.u.) of a semiconductor structure of the present invention. At the total strain energy value of the semiconductor structure referred to as "critical strain energy" (as illustrated by line 902 of graph 900), the IQE of the semiconductor structure of the present invention can be reduced. The IQE of the semiconductor structure below the critical strain energy (as indicated by line 904) may be substantially greater than the IQE of the semiconductor structure above the critical strain energy (as indicated by line 906). For example, graph 900 illustrates the IQE values of several semiconductor structures of the present invention (as indicated by the rectangular indicator). In some embodiments, the IQE below the critical strain energy can be about 500% higher than the IQE of the critical strain energy. In other embodiments, the IQE below the critical strain energy can be about 250% higher than the IQE of the critical strain energy. In other embodiments, the IQE below the critical strain energy can be about 100% greater than the IQE above the critical strain energy.

For the semiconductor structure of the present invention, the critical strain energy (au) 902 can have about 1800 (au) or less than 1800 (au), about 2800 (au), or less than 2800 (au), or even about 4500 (au) or less than 4500. The value of (au).

In the present invention, the plurality of Ill-nitride layers comprising the growth stack 682 of FIG. 6D may cause the growth stack 682 to undergo substantially complete strain to match the lattice of the In _s Ga _1-s N seed layer 656 of the growth template 113. The way to deposit. In such embodiments in which the growth stack 682 is grown in a substantially fully strained (ie, substantially strain free) manner, the growth stack can inherit the lattice parameters of the In _s Ga _1-s N seed layer. In certain embodiments of the invention, the In _s Ga _1-s N seed layer may exhibit growth face lattice parameters greater than or equal to about 3.189 angstroms, and the growth stack may exhibit growth face crystals greater than or equal to about 3.189 angstroms. Grid parameters. Thus, in a non-limiting example, semiconductor structures 100, 200, 300, 400, and 500 can be formed from a fully strained material and can have such growth face lattice parameters. In some embodiments, the GaN substrate formed on the In _s Ga _1-s N seed layer 656 when the GaN underlayer 112 is grown in lattice matching with the In _s Ga _1-s N seed layer 656 Layer 112 is grown in a relaxed manner.

In other embodiments, the plurality of Ill-nitride layers of FIG. 6D comprising the growth stack 682 can be deposited in such a manner that the growth stack 682 is partially relaxed, that is, the lattice parameters of the growth stack 682 are different from the underlying In _s Ga _{1 -s} N seed layer. In these embodiments, the percent strain relaxation (R) can be defined as:

Where a is the average growth face lattice parameter of the growth stack 682, a _s is the average growth face lattice parameter of the In _s Ga _1-s N seed crystal, and a ₁ is the equilibrium growth state (or natural state) average growth surface of the growth stack. Lattice parameters. For example, in some embodiments, growth stack 682 can exhibit a strain relaxation (R) percentage of less than about 0.5%; in other embodiments, growth stack 682 can exhibit a strain relaxation (R) percentage of less than about 10%; And in other embodiments, the growth stack 682 can exhibit a strain relaxation (R) percentage of less than about 50%.

After epitaxial deposition of the various layers of the semiconductor structure comprising the III-nitride material, further processing can be performed to form the semiconductor structure into a light-emitting device, such as an LED. For example, electrode contacts can be formed on the Ill-nitride material layer using methods known in the art and are briefly described below with reference to Figures 7 and 8.

An example of a light emitting device 700 (such as an LED) made from semiconductor structure 100 is illustrated in FIG. Although the following description describes embodiments in which the light emitting device is fabricated from the semiconductor structure 100, it should be noted that such manufacturing methods can also be applied to the semiconductor structures 200, 300, 400, and 500.

In more detail, a portion of the semiconductor structure 100 can be removed, thereby exposing a portion of the GaN substrate layer 112. Removing a selected portion of the semiconductor structure 100 may be by way of a semiconductor junction The exposed surface of the p-type contact layer of the structure 100 is coated with a photosensitive chemical (not shown). The photosensitive layer can be used as a "mask layer" to selectively remove the group III nitride layer on the GaN substrate layer 112 by exposure to electromagnetic radiation through the patterned transparent plate and subsequent development. Removing selected portions of the Ill-nitride layer on the GaN substrate layer 112 may include etching methods such as wet chemical etching and/or plasma-based dry etching (eg, reactive ion etching, inductively coupled plasma etching). ).

A first electrode contact 702 can be formed on a portion of the exposed GaN substrate layer 112. The first electrode contact 702 can comprise one or more metals, which can include titanium, aluminum, nickel, gold, and one or more alloys thereof. The second electrode contact 704 can be formed on a portion of the p-type contact layer 104, and the second electrode contact 704 can include one or more metal layers, which can include nickel, gold, platinum, silver, and one or more alloys thereof. Once the first electrode contact 702 and the second electrode contact 704 are formed, current can be passed through the illumination device 700 to generate electromagnetic radiation, such as electromagnetic radiation in the form of visible light. It should be noted that illumination device 700 is commonly referred to in the art as a "transverse device" because at least a portion of the current path between first electrode contact 702 and second electrode contact 704 includes a lateral path.

Another example of a light emitting device 800 (such as an LED) made of semiconductor structure 100 is illustrated in FIG. 8, although the following description again describes an embodiment in which a light emitting device light emitting device is fabricated from semiconductor structure 100, it should be noted that such manufacturing methods It can also be applied to semiconductor structures 200, 300, 400, and 500.

In more detail, all or a portion of the growth template 113 can be removed from the semiconductor structure 100 to be capable of exposing the In _s Ga _1-s N layer 656 or, in some embodiments, capable of exposing the GaN substrate layer 112. Removal of all or a portion of the growth template 113 may include one or more removal methods including wet etching, dry etching, chemical mechanical polishing, grinding, and laser lift-off. The first electrode contact 802 can be applied to the GaN substrate layer 112 as soon as all or a portion of the growth template 113 is removed, as described above. Subsequently, a second electrode contact 804 can be applied to a portion of the p-type contact layer 104 to form the light emitting device 800. Once the first electrode contact 802 and the second electrode contact 804 are formed, current can be passed through the illumination device 800 to generate electromagnetic radiation, such as electromagnetic radiation in the form of visible light. It should be noted that illumination device 800 is commonly referred to in the art as a "vertical device" because the current path between first electrode layer 802 and second electrode layer 804 includes a substantially vertical path.

In addition to the methods of manufacture and processes for fabricating the non-limiting example illumination devices 700 and 800 described above, it should be noted that other methods and processes known in the art, such as surface roughening to improve light extraction, may also be used. Bonding to a metallic carrier to improve heat dissipation, and processes known in the art as "cladding bonding", as well as other well known fabrication methods.

A light emitting device (such as an LED) in accordance with an embodiment of the present invention can be fabricated and used in any type of light emitting device in which one or more LEDs are incorporated. The LED embodiments of the present invention are particularly well suited for applications that benefit from LEDs that operate at relatively high power and that require relatively high luminosity. For example, the LED of the present invention is particularly suitable for LED lamps and LED-based bulbs, which can be used for building lighting, street lighting, automotive lighting, and the like.

Other embodiments of the invention include an illuminator device for illuminating, including one or more LEDs as described herein, such as illuminating device 700 of Figure 7 and illuminating device 800 of Figure 8. By way of non-limiting example, the illuminant device can be as described in, for example, U.S. Patent No. 6,600,175 (issued to Baretz et al. on Jul. 29, 2003, the disclosure of each of One or more LEDs as described herein are included.

Figure 14 illustrates an example embodiment of an illuminant device 900 of the present invention including a illuminating device, as described with reference to Figures 7 and 8. As shown in Figure 14, illuminant device 900 can include a container 902 at least a portion that is at least substantially transparent to electromagnetic radiation in the visible region of the electromagnetic radiation spectrum. Container 902 can comprise, for example, an amorphous or crystalline ceramic material (eg, glass) or a polymeric material. The LED 800 is disposed within the container 902 and can be mounted to a support structure 904 (e.g., a printed circuit board or other substrate) within the container 902. Luminaire device 900 further includes a first electrical contact structure 906 and a second electrical contact structure 908. First An electrical contact structure 906 can be in electrical communication with one of the electrode contacts of the LED, such as the first electrode contact 802 (FIG. 8), and the second electrical contact structure 908 can be coupled to the other of the electrode contacts of the LED, such as The two electrode contacts 804 (Fig. 8) are in electrical communication. As a non-limiting example, first electrical contact structure 906 can be in electrical communication with first electrode contact 804 via support structure 904, and wire 910 can be used for electrical coupling of second electrical contact structure 908 with second electrode contact 804. Accordingly, a voltage can be applied between the first electrical contact structure 906 of the illuminant device 900 and the second electrical contact structure 908 to provide a voltage and corresponding voltage between the first electrode contact 802 and the second electrode contact 804 of the LED. Current, which causes the LED to emit radiation.

Luminaire device 900 can optionally include a fluorescent or phosphorescent material that will emit electromagnetic radiation (e.g., visible light) when stimulated or excited by electromagnetic radiation emitted by one or more LEDs 800 within container 902. ). For example, inner surface 912 of container 902 can be at least partially coated with such a fluorescent or phosphorescent material. One or more of the LEDs 800 can emit one or more electromagnetic radiation of a particular wavelength, and the fluorescent or phosphorescent material can include a mixture of different materials that emit radiation of different visible wavelengths such that the illuminant device 900 emits white light outward from the container 902. Various types of fluorescent and phosphorescent materials are known in the art and can be used in the illuminant device embodiments of the present invention. For example, some of these materials are disclosed in the aforementioned U.S. Patent No. 6,600,175.

Other non-limiting examples of embodiments of the invention are set forth below.

Embodiment 1: A semiconductor structure comprising: a GaN base layer having a growth face having a growth face lattice parameter greater than or equal to about 3.189 angstroms; an active region disposed on the base layer, the active region comprising a plurality of InGaN layers The plurality of InGaN layers include at least one In _w Ga _1-w N well layer, wherein 0.10 w 0.40, and at least one In _b Ga _1-b N barrier layer, of which 0.01 b 0.10; an electron blocking layer disposed on a side of the active region opposite to the GaN base layer; a p-type body layer disposed on the electron blocking layer, the p-type body layer comprising In _p Ga _1-p N, wherein 0.01 p 0.08; and a p-type contact layer disposed on the p-type body layer, the p-type contact layer comprising In _c Ga _1-c N, wherein 0.00 c 0.10.

Embodiment 2: The semiconductor structure of Embodiment 1, wherein the base layer further comprises a growth template, the growth template comprising: a support substrate; and an In _s Ga _1-s N seed layer disposed on the support substrate, wherein The growth surface of the In _s Ga _1-s N seed layer is a polar plane with a growth plane lattice parameter greater than or equal to about 3.189 angstroms, of which 0.02 s 0.05, and wherein the growth face of the GaN substrate layer and the In _s Ga _1-s N seed layer is substantially lattice matched.

Example 3: The semiconductor structure of Example 3 of such embodiments, further comprising In _sp Ga _1-sp N spacer layer, the In _sp Ga _1-sp N spacer layer disposed In _s Ga _1-s N seed layer of the On the opposite side of the GaN basal layer, of which 0.01 Sp 0.10.

The semiconductor structure of any one of embodiments 1 to 3, further comprising an In _cp Ga _1-cp N cap layer disposed between the _active region and the electron blocking layer, wherein 0.01 Cp 0.10.

The semiconductor structure of any one of embodiments 1 to 4, wherein the electron blocking layer comprises In _e Ga _1-e N, wherein 0.01 e 0.02.

The semiconductor structure of any of embodiments 1 to 5, wherein the electron blocking layer comprises at least substantially GaN.

The semiconductor structure of any one of embodiments 1 to 6, wherein the electron blocking layer comprises at least substantially Al _e Ga _1-e N, wherein 0.1 e 0.2.

Embodiment 8: The semiconductor structure of Embodiment 7, wherein the electron blocking layer has a superlattice structure comprising alternating layers of GaN and Al _e Ga _1-e N, wherein 0.1 e 0.2.

The semiconductor of any one of embodiments 1 to 9, further comprising an electron stop layer disposed between the GaN substrate layer and the active region, wherein the electron stop layer comprises Al _st Ga _{1- St} N, where 0.01 St 0.20.

Embodiment 10: The semiconductor structure of Embodiment 9, wherein the electron arresting layer has a superlattice structure comprising alternating layers of GaN and Al _st Ga _1-st N, wherein 0.01 St 0.2.

The semiconductor structure of any one of embodiments 1 to 10, further comprising a strain relief layer disposed between the GaN substrate layer and the _active region, the strain relief layer having In _sra Ga _sra Superlattice structure of alternating layers of N and In _srb Ga _1-srb N, of which 0.01 Sra 0.10, of which 0.01 Srb 0.10, and where sra is greater than srb.

The semiconductor structure of any of embodiments 1 to 11, wherein the active region further comprises another GaN-containing barrier layer disposed between the at least one well layer and the at least one barrier layer.

The semiconductor structure of any one of embodiments 1 to 12, wherein the semiconductor structure has a critical strain energy of about 4500 (a.u.) or less than 4500 (a.u.).

The semiconductor structure of any one of embodiments 1 to 13, wherein the GaN substrate layer, the active region, the electron blocking layer, the p-type body layer, and the p-type contact layer define a presentation of less than 1 Growth stack of % strain relaxation percentage.

The semiconductor structure of any of embodiments 1 to 14, wherein the p-type contact layer comprises at least substantially GaN.

The semiconductor structure of any of embodiments 1 to 15, further comprising a first electrode contact on at least a portion of the GaN substrate layer and on at least a portion of the p-type contact layer Second electrode contact.

Embodiment 17: A light-emitting device comprising: a GaN base layer having a growth face having a growth face lattice parameter greater than or equal to about 3.189 angstroms; an active region disposed on the base layer, the active region comprising a plurality of InGaN layers The plurality of InGaN layers include at least one well layer and at least one barrier layer; an electron blocking layer disposed on the active region; a p-type In _p Ga _1-p N bulk layer disposed on the electron blocking layer; and a p-type In _c Ga _1-c N contact layer on the p-type In _p Ga _1-p N bulk layer, wherein the luminescent device has a critical strain energy of about 4500 (au) or less than 4500 (au).

Embodiment 18: The illumination device of Embodiment 17, wherein the at least one well layer comprises In _w Ga _1-w N, wherein 0.10 w 0.40.

The illuminating device of embodiment 17 or embodiment 18, wherein the at least one barrier layer comprises In _b Ga _1-b N, wherein 0.01 b 0.10.

The illuminating device of any one of embodiments 17 to 19, wherein the electron blocking layer comprises at least substantially GaN.

The illuminating device of any one of embodiments 17 to 20, wherein in the p-type In _p Ga _1-p N bulk layer, 0.01 p 0.08.

Embodiment 22: The light-emitting device of any one of Embodiments 17 to 21, wherein in the p-type In _c Ga _1-c N contact layer, 0.01 c 0.10.

The semiconductor structure of any one of embodiments 17 to 22, wherein the p-type In _c Ga _1-c N contact layer substantially comprises GaN.

The illuminating device of any one of embodiments 17 to 23, further comprising a first electrode contact on at least a portion of the GaN substrate layer and the p-type In _c Ga _1-c N a second electrode contact on at least a portion of the contact layer.

The semiconductor structure of any one of embodiments 17 to 24, wherein the GaN substrate layer, the active region, the electron blocking layer, the p-type body layer, and the p-type contact layer define a presentation of less than 1 Growth stack of % strain relaxation percentage.

Embodiment 26: A method of forming a semiconductor structure, comprising: providing a GaN underlayer having a polar growth plane having a growth plane lattice parameter greater than or equal to about 3.189 Å; growing a plurality of InGaN layers at the basal layer Forming an active region thereon, the growing the plurality of InGaN layers comprising: growing at least one well layer comprising In _w Ga _1-w N, wherein 0.10 w 0.40, and growing at least one barrier layer on the at least one well layer, the at least one barrier layer comprising In _b Ga _1-b N, wherein 0.01 b 0.10; growing an electron blocking layer on the active region; growing a p-type In _p Ga _1-p N bulk layer on the electron blocking layer, wherein 0.01 p 0.08; and growing a p-type In _c Ga _1-c N contact layer on the p-type In _p Ga _1-p N bulk layer, wherein 0.00 c 0.10.

The method of embodiment 26, wherein the forming the substrate layer further comprises forming a growth template, the forming the growth template comprising: providing a support substrate; and bonding the In _s Ga _1-s N seed layer to the support substrate, Wherein the growth surface of the In _s Ga _1-s N seed layer is a pole surface having a growth plane lattice parameter greater than or equal to about 3.189 angstroms, and wherein in the In _s Ga _1-s N seed layer, 0.02 s 0.05.

Embodiment 28: The method of Embodiment 27, further comprising growing an In _sp Ga _1-sp N spacer layer, the In _sp Ga _1-sp N spacer layer being on the In _s Ga _1-s N seed layer On the opposite side of the GaN substrate layer, wherein in the In _sp Ga _1-sp N spacer layer, 0.01 Sp 0.10.

The method of any one of embodiments 26 to 28, further comprising growing an In _cp Ga _1-cp N cap layer disposed between the _active region and the electron blocking layer, wherein the In _Cp Ga _1-cp N cap layer, 0.01 Cp 0.10.

The method of any one of embodiments 26 to 29, wherein the growing the electron blocking layer comprises growing the electron blocking layer comprising at least substantially In _e Ga _1-e N, wherein 0.00 e 0.02.

The method of any one of embodiments 26 to 30, wherein growing the electron blocking layer comprises growing the electron blocking layer comprising at least substantially GaN.

The method of any one of embodiments 26 to 31, wherein the growing the electron blocking layer comprises growing the electron blocking layer comprising at least substantially Al _e Ga _1-e N, wherein 0.1 e 0.2.

The method of any one of embodiments 26 to 29, wherein the electron blocking layer growth comprises the electron blocking of a superlattice structure having alternating layers of GaN and Al _e Ga _1-e N Layer growth, of which 0.1 e 0.2.

The method of any one of embodiments 26 to 33, further comprising growing an electron stop layer disposed between the GaN substrate layer and the active region, wherein the electron stop layer comprises at least substantially Al _St Ga _1-st N, of which 0.01 St 0.20.

The method of any one of embodiments 26 to 34, further comprising: growing a strain relief layer disposed between the GaN substrate layer and the _active region, the strain relief layer having In _sra Ga Superlattice structure of alternating layers of _sra N and In _srb Ga _1-srb N, of which 0.01 Sra 0.10, of which 0.01 Srb 0.10, and where sra is greater than srb.

The method of any one of embodiments 26 to 35, wherein forming the active region further comprises one or more other GaN-containing regions disposed between the at least one well layer and the at least one barrier layer The barrier layer grows.

The method of any one of embodiments 26 to 36, wherein the GaN substrate layer, the active region, the electron blocking layer, the p-type body layer, and the p-type contact layer together define a presentation of less than 1 Growth stack of % strain relaxation percentage.

Embodiment 38: The method of Embodiment 37, further comprising forming a growth stack having a critical strain energy of about 2800 (a.u.) or less than 2800 (a.u.).

The method of any one of embodiments 26 to 38, wherein growing the p-type contact layer comprises growing the p-type contact layer comprising at least substantially GaN.

Embodiment 40: The method of Embodiment 37 or Embodiment 38, further comprising growing the growth in a single chemical vapor deposition system at a pressure of between about 50 mTorr and about 500 mTorr.

The method of any one of embodiments 26 to 40, further comprising: causing the p-type In while flowing trimethylindium (TMI) and triethylgallium (TMG) through the chamber _{A p} Ga _1-p N bulk layer is grown in the chamber, wherein a flow rate ratio (%) of trimethyl indium (TMI) flow rate to triethylgallium (TMG) flow rate is between about 50% and about 95% .

The above-described embodiments of the present invention are not intended to limit the scope of the invention, and the embodiments are only examples of the embodiments of the invention, and the scope of the invention is defined by the scope of the appended claims and their legal equivalents. It is intended that any equivalent embodiments be included within the scope of the invention. In fact, various modifications of the present invention, such as alternative useful combinations of the elements, will be apparent to those skilled in the art in light of this disclosure. It is also expected that such retouching and embodiments are within the scope of the accompanying claims.

Claims (15)

A semiconductor structure comprising: a GaN base layer having a polar growth surface having a growth plane lattice parameter greater than or equal to about 3.189 Angstroms; an active region disposed on the base layer, the active region comprising a plurality of InGaN layers, The plurality of InGaN layers includes at least one In _w Ga _1-w N well layer, wherein 0.10 w 0.40, and at least one In _b Ga _1-b N barrier layer, of which 0.01 b 0.10; an electron blocking layer disposed on a side of the active region opposite to the GaN base layer; a p-type body layer disposed on the electron blocking layer, the p-type body layer comprising In _p Ga _1-p N, Of which 0.01 p 0.08; and a p-type contact layer disposed on the p-type body layer, the p-type contact layer comprising In _c Ga _1-c N, wherein 0.00 c 0.10. The semiconductor structure of claim 1, wherein the base layer further comprises a growth template, the growth template comprising: a support substrate; and an In _s Ga _1-s N seed layer disposed on the support substrate, wherein the In _s Ga ₁ The growth surface of the _-s N seed layer is a polar surface with a growth plane lattice parameter greater than or equal to about 3.189 angstroms, of which 0.02 s 0.05, and wherein the GaN base layer is substantially lattice matched to the growth face of the In _s Ga _1-s N seed layer. The semiconductor structure of claim 1 wherein the electron blocking layer comprises at least substantially GaN. The semiconductor structure of claim 1, further comprising an electron stop layer disposed between the GaN base layer and the active region, wherein the electron stop layer comprises Al _st Ga _1-st N, wherein 0.01 St 0.20. The semiconductor structure of claim 1, further comprising a strain relief layer disposed between the GaN base layer and the _active region, the strain relief layer having alternating layers comprising In _sra Ga _sra N and In _srb Ga _1-srb N Superlattice structure, of which 0.01 Sra 0.10, and 0.01 of them Srb 0.10, and where sra is greater than srb. The semiconductor structure of claim 1, wherein the active region further comprises another GaN-containing barrier layer disposed between the at least one well layer and the at least one barrier layer. The semiconductor structure of claim 1, wherein the semiconductor structure has a critical strain energy of about 4500 (a.u.) or less than 4500 (a.u.). The semiconductor structure of claim 1 wherein the p-type contact layer comprises at least substantially GaN. A method of forming a semiconductor structure, comprising: providing a GaN underlayer having a growth face having a growth face lattice parameter greater than or equal to about 3.189 Å; growing a plurality of InGaN layers to form an active region on the substrate layer, such that The plurality of InGaN layer growths comprise: growing at least one well layer comprising In _w Ga _1-w N, wherein 0.10 w 0.40, and growing at least one barrier layer on the at least one well layer, the at least one barrier layer comprising In _b Ga _1-b N, wherein 0.01 b 0.10; growing an electron blocking layer on the active region; growing a p-type In _p Ga _1-p N bulk layer on the electron blocking layer, wherein 0.01 p 0.08; and growing a p-type In _c Ga _1-c N contact layer on the p-type In _p Ga _1-p N bulk layer, wherein 0.00 c 0.10. The method of claim 9, wherein the forming the base layer further comprises forming a growth template, the forming the growth template comprising: providing a support substrate; and bonding an In _s Ga _1-s N seed layer to the support substrate, wherein the In _s The growth face of the Ga _1-s N seed layer is a pole face having a growth face lattice parameter greater than or equal to about 3.189 angstroms, and wherein in the In _s Ga _1-s N seed layer, 0.02 s 0.05. The method of claim 9, wherein the growing the electron blocking layer comprises growing the electron blocking layer comprising at least substantially GaN. The method of claim 9, further comprising growing an electron stop layer disposed between the GaN base layer and the active region, wherein the electron stop layer comprises at least substantially Al _st Ga _1-st N, wherein 0.01 St 0.20. The method of claim 9, further comprising growing a strain relief layer disposed between the GaN base layer and the _active region, the strain relief layer having an _alternation comprising In _sra Ga _sra N and In _srb Ga _1-srb N Superlattice structure of the layer, of which 0.01 Sra 0.10, and 0.01 of them Srb 0.10, and where sra is greater than srb. The method of claim 9, further comprising forming the semiconductor structure having a critical strain energy of about 2800 (a.u.) or less than 2800 (a.u.). The method of claim 9, wherein the growing the p-type contact layer comprises growing the p-type contact layer comprising at least substantially GaN.