Nothing Special   »   [go: up one dir, main page]

TWI615858B - Conductive particles, conductive materials, and connection structures - Google Patents

Conductive particles, conductive materials, and connection structures Download PDF

Info

Publication number
TWI615858B
TWI615858B TW101149093A TW101149093A TWI615858B TW I615858 B TWI615858 B TW I615858B TW 101149093 A TW101149093 A TW 101149093A TW 101149093 A TW101149093 A TW 101149093A TW I615858 B TWI615858 B TW I615858B
Authority
TW
Taiwan
Prior art keywords
conductive layer
particles
core material
conductive
substrate
Prior art date
Application number
TW101149093A
Other languages
Chinese (zh)
Other versions
TW201333980A (en
Inventor
Keizo Nishioka
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Publication of TW201333980A publication Critical patent/TW201333980A/en
Application granted granted Critical
Publication of TWI615858B publication Critical patent/TWI615858B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/18Non-metallic particles coated with metal
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/52Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1655Process features
    • C23C18/1662Use of incorporated material in the solution or dispersion, e.g. particles, whiskers, wires
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Chemically Coating (AREA)
  • Powder Metallurgy (AREA)

Description

導電性粒子、導電材料及連接構造體 Conductive particles, conductive materials, and connection structures

本發明係關於一種於基材粒子之表面上配置有導電層之導電性粒子,更詳細而言,例如關於一種可使用於電極間之電性連接之導電性粒子。又,本發明係關於一種使用有上述導電性粒子之導電材料及連接構造體。 The present invention relates to a conductive particle in which a conductive layer is disposed on a surface of a substrate particle, and more particularly, for example, a conductive particle which can be used for electrical connection between electrodes. Further, the present invention relates to a conductive material and a connection structure using the above conductive particles.

眾所周知有各向異性導電膏及各向異性導電膜等各向異性導電材料。該各向異性導電材料係於黏合劑樹脂中分散有導電性粒子。 An anisotropic conductive material such as an anisotropic conductive paste or an anisotropic conductive film is known. The anisotropic conductive material is obtained by dispersing conductive particles in a binder resin.

上述各向異性導電材料係使用於IC晶片與軟性印刷電路基板之連接、及IC晶片與具有ITO(Indium Tin Oxides,氧化銦錫)電極之電路基板之連接等。例如,於在IC晶片之電極與電路基板之電極之間配置各向異性導電材料後,可藉由加熱及加壓而將該等電極電性連接。 The anisotropic conductive material is used for connection between an IC chip and a flexible printed circuit board, and connection of an IC chip to a circuit board having an ITO (Indium Tin Oxide) electrode. For example, after an anisotropic conductive material is disposed between the electrode of the IC chip and the electrode of the circuit board, the electrodes can be electrically connected by heating and pressurization.

作為上述導電性粒子之一例,於下述專利文獻1中,揭示有如下之導電性粒子:於平均粒徑為1~20 μm之球狀之基材粒子之表面,藉由非電解鍍敷法而形成有鎳導電層或鎳合金導電層。該導電性粒子係於導電層之最表層具有0.05~4 μm之微小之突起。該導電層與該突起實質上係連續地連接。 As an example of the above-mentioned conductive particles, in the following Patent Document 1, the following conductive particles are disclosed: on the surface of spherical substrate particles having an average particle diameter of 1 to 20 μm, by electroless plating A nickel conductive layer or a nickel alloy conductive layer is formed. The conductive particles have minute protrusions of 0.05 to 4 μm in the outermost layer of the conductive layer. The conductive layer is substantially continuously connected to the protrusion.

於下述專利文獻2中,揭示有包括如下構件之導電性粒子:塑膠核體;高分子電解質層,其覆蓋該塑膠核體;金屬粒子,其介隔該高分子電解質層而吸附於上述塑膠核 體;及非電解金屬鍍敷層,其以覆蓋該金屬粒子之方式,形成於上述塑膠核體之周圍。 Patent Document 2 discloses a conductive particle including a plastic core body, a polymer electrolyte layer covering the plastic core body, and a metal particle which is adsorbed to the plastic material via the polymer electrolyte layer. nuclear And an electroless metal plating layer formed around the plastic core body so as to cover the metal particles.

於下述專利文獻3中,揭示有如下之導電性粒子:於基材粒子之表面,形成有含有鎳及磷之金屬鍍敷被膜層與金層之多層的導電層。該導電性粒子係於基材粒子之表面上,配置有芯物質,該芯物質係由導電層被覆。因芯物質而導電層隆起,從而於導電層之表面形成有突起。 Patent Document 3 listed below discloses conductive particles in which a conductive layer containing a plurality of layers of a metal plating film layer of nickel and phosphorus and a gold layer is formed on the surface of the substrate particles. The conductive particles are placed on the surface of the substrate particles, and a core material is disposed, and the core material is coated with a conductive layer. The conductive layer is embossed by the core material, so that protrusions are formed on the surface of the conductive layer.

[先行技術文獻] [Advanced technical literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2000-243132號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-243132

[專利文獻2]日本專利特開2011-108446號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2011-108446

[專利文獻3]日本專利特開2006-228475號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2006-228475

於上述專利文獻1~3中,揭示有於導電層之外側之表面具有突起之導電性粒子。於藉由導電性粒子而連接之電極、及導電性粒子之導電層之表面,形成有氧化被膜之情形較多。上述導電層之突起係為了如下情形而形成:於經由導電性粒子而對電極間進行壓接時,排除電極及導電性粒子之表面之氧化被膜,從而使導電層與電極接觸。 In the above Patent Documents 1 to 3, conductive particles having protrusions on the surface on the outer side of the conductive layer are disclosed. An oxide film is often formed on the surface of the electrode to be connected by the conductive particles and the conductive layer of the conductive particles. The protrusion of the conductive layer is formed in such a manner that when the electrodes are pressure-bonded between the electrodes via the conductive particles, the oxide film on the surface of the electrode and the conductive particles is removed, and the conductive layer is brought into contact with the electrode.

然而,於使用於導電層之外側之表面具有突起之先前的導電性粒子而連接電極間之情形時,存在如下情形:無法充分地排除電極及導電性粒子之表面之氧化被膜,而連接電阻變高。 However, when the surface on the outer side of the conductive layer has a protruding conductive particle and is connected between the electrodes, there is a case where the oxide film on the surface of the electrode and the conductive particle cannot be sufficiently excluded, and the connection resistance is changed. high.

本發明之目的在於提供一種於連接電極間而獲得連接構造體之情形時,可降低電極間之連接電阻之導電性粒子、使用有該導電性粒子之導電材料、及連接構造體。 An object of the present invention is to provide a conductive particle which can reduce the connection resistance between electrodes when a connection structure is obtained between the electrodes, a conductive material using the conductive particles, and a connection structure.

根據本發明之較廣之方面,提供一種導電性粒子,其包括:基材粒子;導電層,其被覆該基材粒子之導電層;及複數個芯物質,其埋設於該導電層內;且上述導電層於外側之表面具有複數個突起,於上述導電層之上述突起之內側配置有上述芯物質,於上述基材粒子與上述芯物質之間配置有上述導電層,上述基材粒子之表面與上述芯物質之表面係隔開距離,上述基材粒子之表面與上述芯物質之表面之間之平均距離超過5 nm。 According to a broad aspect of the present invention, there is provided an electroconductive particle comprising: a substrate particle; a conductive layer covering the conductive layer of the substrate particle; and a plurality of core materials embedded in the conductive layer; The conductive layer has a plurality of protrusions on the outer surface, and the core material is disposed inside the protrusion of the conductive layer, and the conductive layer is disposed between the substrate particle and the core material, and the surface of the substrate particle The distance from the surface of the core material is such that the average distance between the surface of the substrate particles and the surface of the core material exceeds 5 nm.

於本發明之導電性粒子之某個特定之方面,上述基材粒子之表面與上述芯物質之表面之間之平均距離為超過5 nm且800 nm以下。 In a specific aspect of the conductive particles of the present invention, the average distance between the surface of the substrate particles and the surface of the core material is more than 5 nm and 800 nm or less.

於本發明之導電性粒子之某個特定之方面,在上述芯物質之總個數100%中,上述基材粒子之表面與上述芯物質之表面之間之距離超過5 nm的芯物質之個數之比率為超過80%且100%以下。 In a specific aspect of the conductive particles of the present invention, in the total number of 100% of the core material, one of the core materials having a distance between the surface of the substrate particle and the surface of the core material exceeding 5 nm The ratio of the number is more than 80% and less than 100%.

於本發明之導電性粒子之某個特定之方面,上述芯物質中包含最多之金屬元素於上述導電層中包含最多之金屬元素相同。 In a specific aspect of the conductive particles of the present invention, the metal element containing the most metal element in the core material is the same as the metal element containing the most in the conductive layer.

於本發明之導電性粒子之其他特定之方面,上述導電層包括:第1導電層,其被覆上述基材粒子;及第2導電層, 其被覆上述第1導電層及上述芯物質;且上述芯物質係配置於上述第1導電層之表面上,且埋設於上述第2導電層內,上述第2導電層於外側之表面具有複數個突起,於上述第2導電層之上述突起之內側配置有上述芯物質,於上述基材粒子與上述芯物質之間,配置有上述第1導電層。 In another specific aspect of the conductive particles of the present invention, the conductive layer includes: a first conductive layer covering the substrate particles; and a second conductive layer, The first conductive layer and the core material are covered; and the core material is disposed on a surface of the first conductive layer and embedded in the second conductive layer, and the second conductive layer has a plurality of surfaces on the outer side In the protrusion, the core material is disposed inside the protrusion of the second conductive layer, and the first conductive layer is disposed between the substrate particle and the core material.

於本發明之導電性粒子之另一特定之方面,上述芯物質中包含最多之金屬元素與上述第2導電層中包含最多之金屬元素相同。 In another specific aspect of the conductive particles of the present invention, the metal element containing the most of the core material is the same as the metal element containing the most of the second conductive layer.

於本發明之導電性粒子之進而另一特定之方面,上述導電層為單層之導電層。 In still another specific aspect of the electroconductive particle of the present invention, the conductive layer is a single layer of a conductive layer.

於本發明之導電性粒子之其他特定之方面,上述芯物質為金屬粒子。 In another specific aspect of the conductive particles of the present invention, the core material is a metal particle.

於本發明之導電性粒子之其他特定之方面,更包括附著於上述導電層之表面之絕緣物質。 In other specific aspects of the conductive particles of the present invention, an insulating material attached to the surface of the conductive layer is further included.

本發明之導電材料包含上述導電性粒子、及黏合劑樹脂。 The conductive material of the present invention comprises the above-mentioned conductive particles and a binder resin.

本發明之連接構造體包括第1連接對象構件、第2連接對象構件、及將該第1、第2連接對象構件連接之連接部,該連接部係由上述導電性粒子而形成、或由包含該導電性粒子與黏合劑樹脂之導電材料而形成。 The connection structure according to the present invention includes a first connection target member, a second connection target member, and a connection portion that connects the first and second connection target members, and the connection portion is formed of the conductive particles or includes The conductive particles are formed of a conductive material of a binder resin.

本發明之導電性粒子包括基材粒子、被覆該基材粒子之導電層、及埋設於該導電層內之複數個芯物質,且上述導電層於外側之表面具有突起,於上述導電層之上述突起之 內側配置有上述芯物質,於上述基材粒子與上述芯物質之間配置有上述導電層,上述基材粒子之表面與上述芯物質之表面係隔開距離,上述基材粒子之表面與上述芯物質之表面之間之平均距離超過5 nm,因此於將本發明之導電性粒子適用於電極間之連接之情形時,可降低電極間之連接電阻。 The conductive particles of the present invention include substrate particles, a conductive layer covering the substrate particles, and a plurality of core materials embedded in the conductive layer, and the conductive layer has protrusions on the outer surface, and the conductive layer is Protruding The core material is disposed on the inner side, and the conductive layer is disposed between the substrate particles and the core material, and a surface of the substrate particle is spaced apart from a surface of the core material, and a surface of the substrate particle and the core are Since the average distance between the surfaces of the substances exceeds 5 nm, when the conductive particles of the present invention are applied to the connection between the electrodes, the connection resistance between the electrodes can be lowered.

以下,對本發明之詳細內容進行說明。 Hereinafter, the details of the present invention will be described.

本發明之導電性粒子包括基材粒子、被覆該基材粒子之導電層、及埋設於該導電層內之複數個芯物質。上述導電層係於外側之表面,具有複數個突起。於上述導電層之上述突起之內側,配置有上述芯物質。於上述基材粒子與上述芯物質之間,配置有上述導電層。上述導電層之一部分之區域配置於上述基材粒子與上述芯物質之間。上述基材粒子之表面與上述芯物質之表面係隔開距離。上述基材粒子之表面與上述芯物質之表面之間之平均距離超過5 nm。 The conductive particles of the present invention include substrate particles, a conductive layer covering the substrate particles, and a plurality of core materials embedded in the conductive layer. The conductive layer is attached to the outer surface and has a plurality of protrusions. The core material is disposed inside the protrusion of the conductive layer. The conductive layer is disposed between the substrate particles and the core material. A region of one of the conductive layers is disposed between the substrate particles and the core material. The surface of the substrate particles is spaced apart from the surface of the core material. The average distance between the surface of the substrate particles and the surface of the core material exceeds 5 nm.

於藉由導電性粒子而連接之電極之表面,形成有氧化被膜之情形較多。進而,於上述導電層之外側之表面,形成有氧化被膜之情形較多。上述導電層於外側之表面具有複數個突起,藉此於電極間配置導電性粒子後使其壓接,藉此藉由突起而排除氧化被膜。因此,可使電極與導電性粒子接觸,從而可降低電極間之連接電阻。 In the case where the surface of the electrode connected by the conductive particles is formed, an oxide film is often formed. Further, an oxide film is often formed on the surface of the outer side of the conductive layer. The conductive layer has a plurality of protrusions on the outer surface, whereby the conductive particles are placed between the electrodes and then pressed, whereby the oxide film is removed by the protrusions. Therefore, the electrode can be brought into contact with the conductive particles, so that the connection resistance between the electrodes can be reduced.

進而,本發明之導電性粒子係於上述基材粒子與上述芯物質之間配置有上述導電層,上述基材粒子之表面與上述 芯物質之表面係隔開距離,上述基材粒子之表面與上述芯物質之表面之間之平均距離超過5 nm,因此於在電極間壓縮導電性粒子時,芯物質難以壓入基材粒子,從而芯物質之一部分之區域難以埋入至基材粒子內。特別是,即便基材粒子為相對較柔軟之樹脂粒子,芯物質亦難以壓入基材粒子,從而芯物質之一部分之區域亦難以埋入至基材粒子內。因此,於電極間之壓接時,導電層之突起較強地擠壓至電極。該結果,藉由突起而有效地排除氧化被膜。因此,可有效地使電極與導電性粒子接觸,從而可有效地降低電極間之連接電阻。 Further, in the conductive particles of the present invention, the conductive layer is disposed between the substrate particles and the core material, and the surface of the substrate particles is as described above The surface of the core material is separated by a distance, and the average distance between the surface of the substrate particle and the surface of the core material exceeds 5 nm. Therefore, when the conductive particles are compressed between the electrodes, it is difficult for the core material to be pressed into the substrate particles. Therefore, it is difficult to embed a region of a part of the core material into the substrate particles. In particular, even if the substrate particles are relatively soft resin particles, it is difficult for the core material to be pressed into the substrate particles, and it is difficult to embed a portion of the core material into the substrate particles. Therefore, when the electrodes are crimped, the protrusions of the conductive layer are strongly pressed to the electrodes. As a result, the oxide film is effectively removed by the protrusions. Therefore, the electrode can be effectively brought into contact with the conductive particles, so that the connection resistance between the electrodes can be effectively reduced.

又,本發明之導電性粒子係包括上述構成,因此於壓縮導電性粒子而將電極間連接時,亦可對電極形成適當之壓痕。再者,形成於電極之壓痕係導電性粒子推壓電極而產生之電極之凹部。進而,於將使導電性粒子分散於黏合劑樹脂中之導電材料(各向異性導電材料等)使用於電極間之壓接之情形時,可有效地排除導電層與電極之間之黏合劑樹脂。亦可藉由有效地排除黏合劑樹脂而降低電極間之連接電阻。進而,於使用有包括絕緣物質之導電性粒子之情形時,亦可藉由上述突起而有效地排除導電層與電極之間之絕緣物質,因此可有效地提高電極間之導通可靠性。 Further, since the conductive particles of the present invention have the above-described configuration, when the conductive particles are compressed and the electrodes are connected to each other, an appropriate indentation can be formed on the electrodes. Further, the indentation formed on the electrode is a concave portion of the electrode which is generated by the conductive particles pressing the electrode. Further, when a conductive material (an anisotropic conductive material or the like) in which conductive particles are dispersed in a binder resin is used for the pressure bonding between the electrodes, the adhesive resin between the conductive layer and the electrode can be effectively excluded. . It is also possible to reduce the connection resistance between the electrodes by effectively eliminating the binder resin. Further, when conductive particles including an insulating material are used, the insulating material between the conductive layer and the electrode can be effectively removed by the protrusions, so that the conduction reliability between the electrodes can be effectively improved.

就更進一步有效地排除電極及導電性粒子之表面之氧化被膜,且更進一步提高電極間之導通可靠性之觀點而言,上述基材粒子之表面與上述芯物質之表面之間之平均距離較佳為5 nm以上,更佳為10 nm以上。上述基材粒子之表 面與上述芯物質之表面之間之平均距離的上限並無特別限定,考慮導電層之厚度等而適當決定。上述基材粒子之表面與上述芯物質之表面之間之平均距離可為800 nm以下,亦可為100 nm以下。上述基材粒子之表面與上述芯物質之表面之間之平均距離較佳為30 nm以下,更佳為20 nm以下。上述基材粒子之表面與上述芯物質之表面之間之平均距離可為導電層的厚度之9/10以下,可為1/2以下,且亦可為1/3以下。 Further, the electrode film and the oxide film on the surface of the conductive particles are further effectively excluded, and the average distance between the surface of the substrate particle and the surface of the core material is higher from the viewpoint of further improving the conduction reliability between the electrodes. Preferably, it is 5 nm or more, more preferably 10 nm or more. Table of the above substrate particles The upper limit of the average distance between the surface and the surface of the core material is not particularly limited, and is appropriately determined in consideration of the thickness of the conductive layer and the like. The average distance between the surface of the substrate particles and the surface of the core material may be 800 nm or less, or may be 100 nm or less. The average distance between the surface of the substrate particles and the surface of the core material is preferably 30 nm or less, more preferably 20 nm or less. The average distance between the surface of the substrate particle and the surface of the core material may be 9/10 or less of the thickness of the conductive layer, and may be 1/2 or less, and may be 1/3 or less.

就更進一步有效地排除電極及導電性粒子之表面之氧化被膜,且更進一步提高電極間之導通可靠性之觀點而言,於上述芯物質之總個數100%中,上述基材粒子之表面與上述芯物質之表面之間之距離超過5 nm的芯物質之個數之比率係較佳為50%以上,更佳為超過80%且100%以下。於所有上述芯物質中,上述基材粒子之表面與上述芯物質之表面之間之距離亦可超過5 nm。 Further, in order to further effectively exclude the oxide film on the surface of the electrode and the conductive particles, and further improve the conduction reliability between the electrodes, the surface of the substrate particle is 100% of the total number of the core materials. The ratio of the number of core materials having a distance of more than 5 nm from the surface of the above-mentioned core material is preferably 50% or more, more preferably more than 80% and 100% or less. In all of the above core materials, the distance between the surface of the substrate particles and the surface of the core material may exceed 5 nm.

所謂上述基材粒子之表面與上述芯物質之表面之間之平均距離係指,於分別測定基材粒子之表面與複數個芯物質之各表面之距離(間隙之最短距離)後,藉由對所測定的值進行平均而算出。於導電性粒子包括埋設於導電層內之5個芯物質A~E之情形時,藉由如下方式而算出:測定基材粒子之表面與芯物質A之表面之距離、基材粒子之表面與芯物質B之表面之距離、基材粒子之表面與芯物質C之表面之距離、基材粒子之表面與芯物質D之表面之距離、及基材粒子之表面與芯物質E之表面之距離,從而對所測定 之5個值進行平均。再者,於芯物質為10個以上之情形時,較佳為測定基材粒子之表面與所有芯物質之各表面之距離,但亦可測定基材粒子之表面與任意選擇之10個芯物質之各表面的距離,從而根據所測定之10個值算出上述平均距離。 The average distance between the surface of the substrate particle and the surface of the core material means that after measuring the distance between the surface of the substrate particle and each surface of the plurality of core materials (the shortest distance of the gap), The measured values were averaged and calculated. When the conductive particles include five core materials A to E embedded in the conductive layer, the distance between the surface of the substrate particles and the surface of the core material A and the surface of the substrate particles are measured. The distance between the surface of the core material B, the distance between the surface of the substrate particle and the surface of the core material C, the distance between the surface of the substrate particle and the surface of the core material D, and the distance between the surface of the substrate particle and the surface of the core material E And thus determined The five values are averaged. Further, in the case where the core material is 10 or more, it is preferred to measure the distance between the surface of the substrate particles and each surface of all the core materials, but it is also possible to measure the surface of the substrate particles and optionally select 10 core materials. The distance between the respective surfaces is used to calculate the above average distance based on the measured 10 values.

上述基材粒子之表面與上述芯物質之表面之間之距離係可藉由如下方式準確地測定:拍攝導電性粒子之複數個部位之剖面而獲得圖像,根據所獲得之圖像作成立體圖像,從而使用所獲得之立體圖像。上述剖面之拍攝係可使用聚光離子束-掃描式電子顯微鏡(FIBSEM,Focused Ion Beam Scanning Electron Microscope)等而進行。例如,使用聚焦離子束而製作導電性粒子之薄膜切片,藉由掃描型電子顯微鏡觀察剖面。將該操作重複數百次而進行圖像解析,藉此可獲得粒子之立體圖像。 The distance between the surface of the substrate particle and the surface of the core material can be accurately determined by taking a cross section of a plurality of portions of the conductive particles to obtain an image, and forming a volume map based on the obtained image. Like, thus using the obtained stereoscopic image. The imaging of the above cross section can be performed using a concentrated ion beam-scanning electron microscope (FIBSEM, Focused Ion Beam Scanning Electron Microscope) or the like. For example, a film slice of conductive particles is produced using a focused ion beam, and the cross section is observed by a scanning electron microscope. This operation is repeated hundreds of times to perform image analysis, whereby a stereoscopic image of the particles can be obtained.

上述導電層係於外側之表面具有突起。該突起為複數個。於導電層之表面及藉由導電性粒子而連接之電極之表面,形成有氧化被膜之情形較多。藉由使用於導電層之外側之表面具有突起之導電性粒子,使導電性粒子配置壓接至電極間,藉此藉由突起而有效地排除上述氧化被膜。因此,可使電極與導電性粒子之導電層更進一步確實地接觸,從而可降低電極間之連接電阻。進而,於導電性粒子於表面包括絕緣物質之情形時、或於導電性粒子分散至黏合劑樹脂中而用作導電材料之情形時,可藉由導電性粒子之突起而有效地排除導電性粒子與電極之間之絕緣物質、 或黏合劑樹脂。因此,可提高電極間之導通可靠性。 The conductive layer has protrusions on the outer surface. The protrusions are plural. An oxide film is often formed on the surface of the conductive layer and the surface of the electrode connected by the conductive particles. The conductive particles are protruded between the electrodes by the conductive particles used on the surface on the outer side of the conductive layer, whereby the oxide film is effectively removed by the protrusions. Therefore, the electrode and the conductive layer of the conductive particles can be more reliably contacted, and the connection resistance between the electrodes can be reduced. Further, when the conductive particles include an insulating material on the surface or when the conductive particles are dispersed in the binder resin to be used as a conductive material, the conductive particles can be effectively excluded by the protrusion of the conductive particles. Insulation between the electrode, Or binder resin. Therefore, the conduction reliability between the electrodes can be improved.

複數個上述突起之平均高度係較佳為0.001 μm以上,更佳為0.05 μm以上,且較佳為0.9 μm以下,更佳為0.2 μm以下。若上述突起之平均高度為上述下限以上及上述上限以下,則可有效地降低電極間之連接電阻。 The average height of the plurality of protrusions is preferably 0.001 μm or more, more preferably 0.05 μm or more, and is preferably 0.9 μm or less, more preferably 0.2 μm or less. When the average height of the protrusions is not less than the above lower limit and not more than the above upper limit, the connection resistance between the electrodes can be effectively reduced.

以下,對導電性粒子、導電材料及連接構造體之詳細內容進行說明。 Hereinafter, the details of the conductive particles, the conductive material, and the connection structure will be described.

(導電性粒子) (conductive particles)

圖1係表示本發明之第1實施形態之導電性粒子之剖面圖。 Fig. 1 is a cross-sectional view showing conductive particles according to a first embodiment of the present invention.

圖1所示之導電性粒子1係包括基材粒子2、導電層3、複數個芯物質4、及絕緣物質5。導電層3係配置於基材粒子2之表面上。於導電性粒子1中,形成有單層之導電層3。導電層3係被覆基材粒子2。導電層3係於外側之表面具有複數個突起3a。複數個芯物質4係配置於基材粒子2之表面上,且埋設於導電層3內。芯物質4係配置於突起3a之內側。於1個突起3a之內側配置有1個芯物質4。因複數個芯物質4而導電層3之外側之表面隆起,從而形成有複數個突起3a。 The conductive particles 1 shown in FIG. 1 include a substrate particle 2, a conductive layer 3, a plurality of core materials 4, and an insulating material 5. The conductive layer 3 is disposed on the surface of the substrate particles 2. In the conductive particles 1, a single layer of the conductive layer 3 is formed. The conductive layer 3 is coated with the substrate particles 2. The conductive layer 3 has a plurality of protrusions 3a on the outer surface. A plurality of core materials 4 are disposed on the surface of the substrate particles 2 and embedded in the conductive layer 3. The core material 4 is disposed inside the protrusion 3a. One core material 4 is disposed inside one protrusion 3a. The surface of the outer side of the conductive layer 3 is embossed by the plurality of core materials 4, thereby forming a plurality of protrusions 3a.

於基材粒子2之表面與芯物質4之表面之間,配置有導電層3。基材粒子2之表面與芯物質4之表面係隔開距離。芯物質4係不與基材粒子2接觸。於導電性粒子1中,基材粒子2之表面與芯物質4之表面之間之平均距離超過5 nm。因此,於基材粒子2之表面與芯物質4之表面之間,配置有充 分之厚度之導電層3部分(導電層部分3b)。基材粒子2之表面與芯物質4之表面之間之距離係配置於基材粒子2的表面與芯物質4之表面之間之導電層部分3b之厚度。 A conductive layer 3 is disposed between the surface of the substrate particle 2 and the surface of the core material 4. The surface of the substrate particles 2 is spaced apart from the surface of the core material 4. The core material 4 is not in contact with the substrate particles 2. In the conductive particles 1, the average distance between the surface of the substrate particles 2 and the surface of the core material 4 exceeds 5 nm. Therefore, between the surface of the substrate particle 2 and the surface of the core material 4, a charge is disposed. Part of the conductive layer 3 (conductive layer portion 3b). The distance between the surface of the substrate particle 2 and the surface of the core material 4 is the thickness of the conductive layer portion 3b disposed between the surface of the substrate particle 2 and the surface of the core material 4.

絕緣物質5係配置於導電層3之表面上。絕緣物質5係絕緣性粒子。絕緣物質5係由具有絕緣性之材料而形成。導電性粒子係亦可未必包括絕緣物質。又,導電性粒子係除絕緣性粒子外,亦可包括被覆導電層之外側之表面之絕緣層作為絕緣物質。 The insulating material 5 is disposed on the surface of the conductive layer 3. The insulating material 5 is an insulating particle. The insulating material 5 is formed of a material having an insulating property. The conductive particles may not necessarily include an insulating material. Further, the conductive particles may include an insulating layer covering the surface on the outer side of the conductive layer as an insulating material in addition to the insulating particles.

於圖2中,以剖面圖表示本發明之第2實施形態之導電性粒子。 In Fig. 2, the conductive particles of the second embodiment of the present invention are shown in a cross-sectional view.

圖2所示之導電性粒子11包括基材粒子2、導電層12、複數個芯物質4、及絕緣物質5。導電層12係配置於基材粒子2之表面上。導電層12係被覆基材粒子2。導電層12係於外側之表面,具有複數個突起12a。 The conductive particles 11 shown in FIG. 2 include a substrate particle 2, a conductive layer 12, a plurality of core materials 4, and an insulating material 5. The conductive layer 12 is disposed on the surface of the substrate particles 2. The conductive layer 12 is coated with the substrate particles 2. The conductive layer 12 is attached to the outer surface and has a plurality of protrusions 12a.

導電性粒子11係形成有多層導電層12。導電層12具有第1導電層16及第2導電層17。第1導電層16係配置於基材粒子2之表面上。第1導電層16係被覆基材粒子2。第1導電層16為單層。第1導電層亦可為多層。 The conductive particles 11 are formed with a plurality of conductive layers 12. The conductive layer 12 has a first conductive layer 16 and a second conductive layer 17. The first conductive layer 16 is disposed on the surface of the substrate particles 2 . The first conductive layer 16 is coated with the substrate particles 2 . The first conductive layer 16 is a single layer. The first conductive layer may also be a plurality of layers.

芯物質4係配置於第1導電層16上。芯物質4係埋設於導電層12及第2導電層17內。於基材粒子2與芯物質4之間配置有第1導電層16。於基材粒子2與芯物質4之間配置有第1導電層16,藉此基材粒子2之表面與芯物質4之表面隔開距離。基材粒子2之表面與芯物質4之表面之間之平均距離係超過5 nm。於導電性粒子11中,基材粒子2之表面與芯物 質4之表面之間之距離係配置於基材粒子2的表面與芯物質4之表面之間之導電層部分12b及第1導電層16(第1導電層16部分)之厚度。 The core material 4 is disposed on the first conductive layer 16. The core material 4 is embedded in the conductive layer 12 and the second conductive layer 17. The first conductive layer 16 is disposed between the substrate particles 2 and the core material 4. The first conductive layer 16 is disposed between the substrate particles 2 and the core material 4, whereby the surface of the substrate particles 2 is spaced apart from the surface of the core material 4. The average distance between the surface of the substrate particle 2 and the surface of the core material 4 is more than 5 nm. In the conductive particles 11, the surface of the substrate particles 2 and the core The distance between the surfaces of the mass 4 is the thickness of the conductive layer portion 12b and the first conductive layer 16 (the first conductive layer 16 portion) disposed between the surface of the substrate particle 2 and the surface of the core material 4.

第2導電層17係與第1導電層16分開形成。第2導電層17係於形成第1導電層16後,形成於第1導電層16之表面。第2導電層17係配置於第1導電層16之表面上。第2導電層17被覆芯物質4及第1導電層16。第2導電層17係於外側之表面,具有複數個突起17a。複數個芯物質4係埋設於第2導電層17內。芯物質4係配置於突起17a之內側。因複數個芯物質4而第2導電層17之外側之表面隆起,從而形成有突起17a。 The second conductive layer 17 is formed separately from the first conductive layer 16. The second conductive layer 17 is formed on the surface of the first conductive layer 16 after the first conductive layer 16 is formed. The second conductive layer 17 is disposed on the surface of the first conductive layer 16. The second conductive layer 17 covers the core material 4 and the first conductive layer 16. The second conductive layer 17 is on the outer surface and has a plurality of protrusions 17a. A plurality of core materials 4 are buried in the second conductive layer 17. The core material 4 is disposed inside the protrusion 17a. The surface of the outer side of the second conductive layer 17 is embossed by the plurality of core materials 4, whereby the protrusions 17a are formed.

於圖3中,以剖面圖表示本發明之第3實施形態之導電性粒子。 In Fig. 3, the conductive particles of the third embodiment of the present invention are shown in a cross-sectional view.

圖3所示之導電性粒子21包括基材粒子2、導電層22、複數個芯物質4、及絕緣物質5。導電層22係配置於基材粒子2之表面上。導電層22係被覆基材粒子2。導電層22係於外側之表面,具有複數個突起22a。 The conductive particles 21 shown in FIG. 3 include a substrate particle 2, a conductive layer 22, a plurality of core materials 4, and an insulating material 5. The conductive layer 22 is disposed on the surface of the substrate particles 2. The conductive layer 22 coats the substrate particles 2. The conductive layer 22 is attached to the outer surface and has a plurality of protrusions 22a.

導電性粒子21係形成有多層導電層22。導電層22具有第1導電層26及第2導電層27。第1導電層26係配置於基材粒子2之表面上。第1導電層26係被覆基材粒子2。 The conductive particles 21 are formed with a plurality of conductive layers 22. The conductive layer 22 has a first conductive layer 26 and a second conductive layer 27. The first conductive layer 26 is disposed on the surface of the substrate particles 2 . The first conductive layer 26 coats the substrate particles 2 .

芯物質4係配置於第1導電層26上。芯物質4係埋設於導電層22內及第2導電層27內。於基材粒子2與芯物質4之間配置有第1導電層26。於基材粒子2與芯物質4之間配置有第1導電層26,藉此基材粒子2之表面與芯物質4之表面隔 開距離。基材粒子2之表面與芯物質4之表面之間之平均距離超過5 nm。於導電性粒子21中,基材粒子2之表面與芯物質4之表面之間之距離係配置於基材粒子2的表面與芯物質4之表面之間之導電層部分22b及第1導電層26部分之厚度。 The core material 4 is disposed on the first conductive layer 26. The core material 4 is embedded in the conductive layer 22 and in the second conductive layer 27. The first conductive layer 26 is disposed between the substrate particles 2 and the core material 4 . The first conductive layer 26 is disposed between the substrate particles 2 and the core material 4, whereby the surface of the substrate particles 2 is separated from the surface of the core material 4. Open distance. The average distance between the surface of the substrate particle 2 and the surface of the core material 4 exceeds 5 nm. In the conductive particles 21, the distance between the surface of the substrate particle 2 and the surface of the core material 4 is disposed between the surface of the substrate particle 2 and the surface of the core material 4, the conductive layer portion 22b and the first conductive layer. The thickness of the 26 part.

第2導電層27係配置於第1導電層26之表面上。第2導電層27係被覆芯物質4及第1導電層26。第2導電層27係於外側之表面具有複數個突起27a。芯物質4係配置於突起27a之內側。因複數個芯物質4而第2導電層27之外側之表面隆起,從而形成有突起27a。 The second conductive layer 27 is disposed on the surface of the first conductive layer 26. The second conductive layer 27 is a core material 4 and a first conductive layer 26 . The second conductive layer 27 has a plurality of protrusions 27a on the outer surface. The core material 4 is disposed inside the protrusion 27a. The surface of the outer side of the second conductive layer 27 is embossed by the plurality of core materials 4, whereby the projections 27a are formed.

第3導電層28係配置於第2導電層27之表面上。第3導電層28係被覆第2導電層27。第3導電層28係於外側之表面具有複數個突起28a。芯物質4係配置於突起28a之內側。因複數個芯物質4而第3導電層28之外側之表面隆起,從而形成有突起28a。 The third conductive layer 28 is disposed on the surface of the second conductive layer 27. The third conductive layer 28 is coated with the second conductive layer 27. The third conductive layer 28 has a plurality of protrusions 28a on the outer surface. The core material 4 is disposed inside the protrusion 28a. The surface of the outer side of the third conductive layer 28 is embossed by the plurality of core materials 4, whereby the protrusions 28a are formed.

較佳為,上述芯物質中包含最多之金屬元素與上述導電層中包含最多之金屬元素相同。於該情形時,芯物質與導電層之密接性變良好,結果連接構造體之連接電阻更進一步變良好。再者,上述芯物質中包含最多之金屬元素與上述導電層中包含最多之金屬元素係亦可於上述芯物質中、上述導電層中、或上述芯物質與上述導電層中,具有濃度梯度。又,上述芯物質中包含最多之金屬元素與上述導電層中包含最多之金屬元素係亦可與其他金屬合金化。又,上述芯物質中包含之金屬與上述導電層中包含之金屬係亦 可於界面合金化。 Preferably, the metal element containing the most of the core material is the same as the metal element containing the most of the conductive layer. In this case, the adhesion between the core material and the conductive layer is improved, and as a result, the connection resistance of the connection structure is further improved. Furthermore, the metal element which is most contained in the core material and the metal element which is most contained in the conductive layer may have a concentration gradient in the core material, in the conductive layer, or in the core material and the conductive layer. Further, the metal element containing the most of the core material and the metal element containing the most of the conductive layer may be alloyed with other metals. Further, the metal contained in the core material and the metal system included in the conductive layer are also Can be alloyed at the interface.

較佳為,上述芯物質中包含最多之金屬元素與上述第1導電層中包含最多之金屬元素相同。於該情形時,芯物質與導電層之密接性變良好,結果連接構造體之連接電阻更進一步變良好。再者,上述芯物質中包含最多之金屬元素與上述第1導電層中包含最多之金屬元素係亦可於上述芯物質中、上述第1導電層中、或上述芯物質與上述第1導電層中,具有濃度梯度。上述第1導電層中包含最多之金屬元素係亦可與其他金屬合金化。上述芯物質中包含之金屬與上述第1導電層中包含之金屬係亦可於界面合金化。 Preferably, the metal element containing the most of the core material is the same as the metal element containing the most of the first conductive layer. In this case, the adhesion between the core material and the conductive layer is improved, and as a result, the connection resistance of the connection structure is further improved. Furthermore, the metal element containing the most of the core material and the metal element containing the most of the first conductive layer may be in the core material, in the first conductive layer, or in the core material and the first conductive layer. Medium with a concentration gradient. The metal element containing the most of the first conductive layer may be alloyed with other metals. The metal contained in the core material and the metal contained in the first conductive layer may be alloyed at the interface.

較佳為,上述芯物質中包含最多之金屬元素與上述第2導電層中包含最多之金屬元素相同。於該情形時,芯物質與導電層之密接性變良好,結果連接構造體之連接電阻更進一步變良好。再者,上述芯物質中包含最多之金屬元素與上述第2導電層中包含最多之金屬元素係亦可於上述芯物質中、上述第2導電層中、或上述芯物質與上述第2導電層中,具有濃度梯度。上述第2導電層中包含最多之金屬元素係亦可與其他金屬合金化。上述芯物質中包含之金屬與上述第2導電層中包含之金屬係亦可於界面合金化。 Preferably, the metal element containing the most of the core material is the same as the metal element containing the most of the second conductive layer. In this case, the adhesion between the core material and the conductive layer is improved, and as a result, the connection resistance of the connection structure is further improved. Furthermore, the metal element containing the most metal element and the metal element containing the most of the second conductive layer may be in the core material, in the second conductive layer, or in the core material and the second conductive layer. Medium with a concentration gradient. The metal element containing the most of the second conductive layer may be alloyed with other metals. The metal contained in the core material and the metal contained in the second conductive layer may be alloyed at the interface.

較佳為,上述芯物質之莫氏硬度與配置於上述基材粒子與上述芯物質之間之導電層部分之莫氏硬度相同、或上述芯物質之莫氏硬度大於配置於上述基材粒子與上述芯物質之間之導電層部分之莫氏硬度。又,較佳為,上述芯物質之莫氏硬度與上述第1導電層之莫氏硬度相同、或上述芯 物質之莫氏硬度大於上述第1導電層之莫氏硬度。於該等情形時,芯物質難以壓入基材粒子,從而芯物質之一部分之區域難以埋入至基材粒子內。該結果,可更進一步降低電極間之連接電阻。就更進一步降低電極間之連接電阻之觀點而言,較佳為上述芯物質之莫氏硬度大於配置於上述基材粒子與上述芯物質之間之導電層部分或上述第1導電層之莫氏硬度。 Preferably, the Mohs hardness of the core material is the same as the Mohs hardness of the portion of the conductive layer disposed between the substrate particles and the core material, or the Mohs hardness of the core material is greater than that of the substrate particles and The Mohs hardness of the portion of the conductive layer between the above core materials. Further, preferably, the Mohs hardness of the core material is the same as the Mohs hardness of the first conductive layer, or the core The Mohs hardness of the substance is greater than the Mohs hardness of the first conductive layer. In such cases, it is difficult for the core material to be pressed into the substrate particles, so that a portion of the core material is difficult to be buried in the substrate particles. As a result, the connection resistance between the electrodes can be further reduced. From the viewpoint of further reducing the connection resistance between the electrodes, it is preferable that the Mohs hardness of the core material is larger than a Mohs portion disposed between the substrate particles and the core material or a Mohs layer of the first conductive layer hardness.

於上述芯物質之莫氏硬度與配置於上述基材粒子與上述芯物質之間之導電層部分、或上述第1導電層之莫氏硬度為同等以上的情形時,就更進一步降低連接電阻之觀點而言,上述芯物質之莫氏硬度與配置於上述基材粒子與上述芯物質之間之導電層部分、或上述第1導電層之莫氏硬度的差之絕對值係較佳為0.1以上,更佳為0.5以上。 When the Mohs hardness of the core material is equal to or higher than the Mohs hardness of the conductive layer portion disposed between the substrate particles and the core material or the first conductive layer, the connection resistance is further lowered. In view of the above, the absolute value of the difference between the Mohs hardness of the core material and the Moiré hardness of the conductive layer portion disposed between the substrate particles and the core material or the first conductive layer is preferably 0.1 or more. More preferably 0.5 or more.

較佳為,上述芯物質之莫氏硬度小於配置於上述基材粒子與上述芯物質之間之導電層部分之莫氏硬度。較佳為,上述芯物質之莫氏硬度小於上述第1導電層之莫氏硬度。於該等情形時,上述導電層部分及上述第1導電層具有某種程度之緩衝性。根據該情形,不僅可降低因配置於基材粒子與芯物質之間之導電層部分、或第1導電層產生之連接電阻,而且即便對藉由導電性粒子而連接電極間之連接構造體賦予衝擊,亦變得難以產生導通不良。即,亦可提高連接構造體之耐衝擊性。 Preferably, the core material has a Mohs hardness which is smaller than a Mohs hardness of a portion of the conductive layer disposed between the substrate particles and the core material. Preferably, the core material has a Mohs hardness which is smaller than a Mohs hardness of the first conductive layer. In such cases, the conductive layer portion and the first conductive layer have a certain degree of cushioning properties. In this case, it is possible to reduce not only the connection resistance generated by the conductive layer portion disposed between the substrate particles and the core material but also the first conductive layer, but also the connection structure between the electrodes by the conductive particles. Impact also becomes difficult to cause poor conduction. That is, the impact resistance of the connection structure can also be improved.

於上述芯物質之莫氏硬度小於配置於上述基材粒子與上述芯物質之間之配置之導電層部分、或上述第1導電層的 莫氏硬度之情形時,就更進一步提高耐衝擊性之觀點而言,上述芯物質之莫氏硬度與配置於上述基材粒子與上述芯物質之間之導電層部分、或上述第1導電層之莫氏硬度的差之絕對值係較佳為0.1以上,更佳為0.5以上。 The Mohs hardness of the core material is smaller than a portion of the conductive layer disposed between the substrate particles and the core material, or the first conductive layer In the case of the Mohs hardness, the Mohs hardness of the core material and the conductive layer portion disposed between the substrate particles and the core material, or the first conductive layer, from the viewpoint of further improving the impact resistance. The absolute value of the difference in the Mohs hardness is preferably 0.1 or more, more preferably 0.5 or more.

[基材粒子] [Substrate particles]

作為上述基材粒子,可列舉樹脂粒子、去除金屬之無機粒子、有機無機混合粒子、及金屬粒子等。上述基材粒子係較佳為去除金屬粒子之基材粒子,更佳為樹脂粒子、去除金屬之無機粒子、或有機無機混合粒子。 Examples of the substrate particles include resin particles, metal-removing inorganic particles, organic-inorganic hybrid particles, and metal particles. The substrate particles are preferably substrate particles from which metal particles are removed, more preferably resin particles, metal-removing inorganic particles, or organic-inorganic hybrid particles.

較佳為,上述基材粒子係由樹脂而形成之樹脂粒子。若上述基材粒子為樹脂粒子,則藉由本發明之導電層及芯物質之構成而獲得之連接電阻的降低效果變得非常大。於使用上述導電性粒子連接電極間時,在將上述導電性粒子配置於電極間後,藉由壓接而使上述導電性粒子壓縮。若基材粒子為樹脂粒子,則於上述壓接時,上述導電性粒子易於變形,從而導電性粒子與電極之接觸面積變大。因此,電極間之導通可靠性變高。 Preferably, the substrate particles are resin particles formed of a resin. When the substrate particles are resin particles, the effect of reducing the connection resistance obtained by the configuration of the conductive layer and the core material of the present invention becomes extremely large. When the conductive particles are used to connect the electrodes, the conductive particles are compressed by pressure bonding after the conductive particles are placed between the electrodes. When the base material particles are resin particles, the conductive particles are easily deformed at the time of the pressure bonding, and the contact area between the conductive particles and the electrode is increased. Therefore, the conduction reliability between the electrodes becomes high.

作為用以形成上述樹脂粒子之樹脂,較佳地使用各種有機物。作為用以形成上述樹脂粒子之樹脂,例如可列舉:聚乙烯、聚丙烯、聚苯乙烯、聚氯乙烯、聚偏二氯乙烯、聚丙烯、聚異丁烯、聚丁二烯等聚烯烴樹脂;聚甲基丙烯酸酯及聚丙烯酸甲酯等丙烯酸樹脂;聚對苯二甲酸烷二醇酯、聚碳酸酯、聚醯胺、酚甲醛樹脂、三聚氰胺-甲醛樹脂、苯并胍胺甲醛樹脂、脲甲醛樹脂、酚樹脂、三聚氰胺 樹脂、苯并胍胺樹脂、脲樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、聚碸、聚苯醚、聚縮醛、聚醯亞胺、聚醯胺醯亞胺、聚醚醚酮、聚醚碸、及聚合1種或者2種以上具有乙烯性不飽和基之各種聚合性單體而獲得之聚合體等。可設計及合成適於導電材料之任意之具有壓縮時之物性的樹脂粒子,且可將基材粒子之硬度控制於較佳之範圍內,因此用以形成上述樹脂粒子之樹脂係較佳為聚合1種或2種以上具有複數個乙烯性不飽和基之聚合性單體之聚合體。 As the resin for forming the above resin particles, various organic materials are preferably used. Examples of the resin for forming the resin particles include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polypropylene, polyisobutylene, and polybutadiene; Acrylic resin such as methacrylate and polymethyl acrylate; polyalkylene terephthalate, polycarbonate, polyamine, phenol formaldehyde resin, melamine-formaldehyde resin, benzoguanamine formaldehyde resin, urea formaldehyde resin , phenolic resin, melamine Resin, benzoguanamine resin, urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polyfluorene, polyphenylene ether, polyacetal, polyimine, polyamidimide, poly Ether ether ketone, polyether oxime, and a polymer obtained by polymerizing one or two or more kinds of polymerizable monomers having an ethylenically unsaturated group. The resin particles suitable for the physical properties of the conductive material can be designed and synthesized, and the hardness of the substrate particles can be controlled within a preferred range. Therefore, the resin for forming the resin particles is preferably polymerized. A polymer of two or more kinds of polymerizable monomers having a plurality of ethylenically unsaturated groups.

於聚合具有乙烯性不飽和基之單體而獲得上述樹脂粒子之情形時,作為具有上述乙烯性不飽和基之單體,可列舉非交聯性之單體與交聯性之單體。 When the monomer having an ethylenically unsaturated group is polymerized to obtain the above-mentioned resin particles, examples of the monomer having the ethylenically unsaturated group include a monomer having no crosslinkability and a crosslinkable monomer.

作為上述非交聯性之單體,例如可列舉:苯乙烯、α-甲基苯乙烯等苯乙烯系單體;(甲基)丙烯酸、順丁烯二酸、順丁烯二酸酐等含有羧基之單體;(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸十六烷酯、(甲基)丙烯酸硬脂酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸異冰片酯等(甲基)丙烯酸烷基酯類;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸甘油酯、聚氧乙烯(甲基)丙烯酸酯、(甲基)丙烯酸縮水甘油酯等含有氧原子之(甲基)丙烯酸酯類;(甲基)丙烯腈等含有腈基之單體;甲基乙烯基醚、乙基乙烯基醚、丙基乙烯基醚等乙烯基醚類;乙酸乙烯酯、丁酸乙烯酯、月桂酸乙烯酯、硬脂酸乙 烯酯等酸乙烯基酯類;乙烯、丙烯、異戊二烯、丁二烯等不飽和烴;(甲基)丙烯酸三氟甲酯、(甲基)丙烯酸五氟乙酯、氯乙烯、氟乙烯、氯苯乙烯等含有鹵素之單體等。 Examples of the non-crosslinkable monomer include styrene monomers such as styrene and α-methylstyrene; and carboxyl groups such as (meth)acrylic acid, maleic acid, and maleic anhydride. Monomer; methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (a) Base (meth) acrylate, lauryl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl (meth) acrylate, isobutyl methacrylate, etc. Ester; 2-hydroxyethyl (meth)acrylate, glyceryl (meth)acrylate, polyoxyethylene (meth)acrylate, glycidyl (meth)acrylate, etc. Ester; a nitrile group-containing monomer such as (meth)acrylonitrile; a vinyl ether such as methyl vinyl ether, ethyl vinyl ether or propyl vinyl ether; vinyl acetate, vinyl butyrate, laurel Acid vinyl ester, stearic acid B Acid vinyl esters such as alkenyl esters; unsaturated hydrocarbons such as ethylene, propylene, isoprene, butadiene; trifluoromethyl (meth)acrylate, pentafluoroethyl (meth)acrylate, vinyl chloride, fluorine A halogen-containing monomer such as ethylene or chlorostyrene.

作為上述交聯性之單體,例如可列舉:四羥甲基甲烷四(甲基)丙烯酸酯、四羥甲基甲烷三(甲基)丙烯酸酯、四羥甲基甲烷二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、三(甲基)丙烯酸甘油酯、二(甲基)丙烯酸甘油酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、(聚)丁二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等多官能(甲基)丙烯酸酯類;(異)氰尿酸三烯丙酯、偏苯三酸三烯丙酯、二乙烯基苯、鄰苯二甲酸二烯丙酯、二烯丙稀丙烯醯胺、二烯丙醚、γ-(甲基)丙烯醯氧基丙基三甲氧基矽烷、三甲氧基矽烷基苯乙烯、乙烯基三甲氧基矽烷等含有矽烷基之單體等。 Examples of the crosslinkable monomer include tetramethylol methane tetra(meth)acrylate, tetramethylol methane tri(meth)acrylate, and tetramethylolmethane di(meth)acrylate. Ester, trimethylolpropane tri(meth)acrylate, dipentaerythritol hexa(meth) acrylate, dipentaerythritol penta (meth) acrylate, tris(meth) acrylate, di(meth)acrylic acid Glycerides, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, (poly)butanediol di(meth)acrylate, 1,4-butanediol Polyfunctional (meth) acrylates such as di(meth) acrylate; triallyl (iso) cyanurate, triallyl trimellitate, divinyl benzene, diallyl phthalate , dipropylene acrylamide, diallyl ether, γ-(meth) propylene methoxy propyl trimethoxy decane, trimethoxy decyl styrene, vinyl trimethoxy decane, etc. Monomers, etc.

藉由公知之方法,使具有上述乙烯性不飽和基之聚合性單體聚合,藉此可獲得上述樹脂粒子。作為該方法,例如可列舉如下等方法:於自由基聚合起始劑之存在下,進行懸浮聚合;及使用非交聯之種粒子而使單體連同自由基聚合起始劑一併膨潤並聚合。 The above-mentioned resin particles can be obtained by polymerizing a polymerizable monomer having the above ethylenically unsaturated group by a known method. As such a method, for example, suspension polymerization is carried out in the presence of a radical polymerization initiator; and the monomer is swelled and polymerized together with the radical polymerization initiator using non-crosslinked particles. .

於上述基材粒子為去除金屬粒子之無機粒子或有機無機混合粒子之情形時,作為用以形成上述基材粒子之無機物,可列舉矽土及碳黑等。作為由上述矽土而形成之粒子,並無特別限定,但例如可列舉藉由如下方式獲得之粒 子:於對具有2個以上加水分解性之烷氧基矽烷基之矽化合物進行加水分解而形成交聯聚合體粒子後,視需要進行焙燒。作為上述有機無機混合粒子,例如可列舉由經交聯之烷氧基矽烷基聚合物與丙烯酸樹脂而形成之有機無機混合粒子等。 In the case where the substrate particles are inorganic particles or organic-inorganic hybrid particles from which metal particles are removed, examples of the inorganic material for forming the substrate particles include alumina and carbon black. The particles formed of the above-described alumina are not particularly limited, and examples thereof include those obtained by the following methods. The hydrazine compound having two or more hydrolyzable alkoxyalkylene groups is hydrolyzed to form crosslinked polymer particles, and then calcined as necessary. Examples of the organic-inorganic hybrid particles include organic-inorganic hybrid particles formed by crosslinking alkoxysilane alkyl polymer and an acrylic resin.

於上述基材粒子為金屬粒子之情形時,作為用以形成該金屬粒子之金屬,可列舉銀、銅、鎳、矽、金及鈦等。然而,較佳為,上述基材粒子並非金屬粒子。 In the case where the substrate particles are metal particles, examples of the metal for forming the metal particles include silver, copper, nickel, rhodium, gold, titanium, and the like. However, it is preferred that the substrate particles are not metal particles.

上述基材粒子之粒徑係較佳為0.1 μm以上,更佳為0.5 μm以上,更進一步較佳為1 μm以上,進而較佳為1.5 μm以上,特佳為2 μm以上,且較佳為1000 μm以下,更佳為500 μm以下,更進一步較佳為300 μm以下,進而較佳為50 μm以下,進而進一步較佳為30 μm以下,特佳為5 μm以下,最佳為3 μm以下。若基材粒子之粒徑為上述下限以上,則導電性粒子與電極之接觸面積變大,故電極間之導通可靠性更進一步變高,經由導電性粒子而連接之電極間之連接電阻更進一步變低。進而,於藉由非電解鍍敷而將導電層形成於基材粒子之表面時,凝聚變難,從而變得難以形成所凝聚之導電性粒子。若粒徑為上述上限以下,則導電性粒子易於充分地壓縮,電極間之連接電阻更進一步變低,進而電極間之間隔變小。上述基材粒子之粒徑係於基材粒子為圓球狀之情形時,表示直徑,於基材粒子並非圓球狀之情形時,表示最大直徑。 The particle diameter of the substrate particles is preferably 0.1 μm or more, more preferably 0.5 μm or more, still more preferably 1 μm or more, further preferably 1.5 μm or more, particularly preferably 2 μm or more, and more preferably 1000 μm or less, more preferably 500 μm or less, still more preferably 300 μm or less, further preferably 50 μm or less, further preferably 30 μm or less, particularly preferably 5 μm or less, and most preferably 3 μm or less. . When the particle diameter of the substrate particles is at least the above lower limit, the contact area between the conductive particles and the electrode is increased, so that the conduction reliability between the electrodes is further increased, and the connection resistance between the electrodes connected via the conductive particles is further increased. Go low. Further, when the conductive layer is formed on the surface of the substrate particles by electroless plating, aggregation becomes difficult, and it becomes difficult to form the aggregated conductive particles. When the particle diameter is at most the above upper limit, the conductive particles are easily compressed sufficiently, and the connection resistance between the electrodes is further lowered, and the interval between the electrodes is further reduced. The particle diameter of the substrate particles is a diameter when the substrate particles are in a spherical shape, and indicates a maximum diameter when the substrate particles are not spherical.

上述基材粒子之粒徑特佳為0.1 μm以上、5 μm以下。若 上述基材粒子之粒徑處於0.1~5 μm之範圍內,則電極間之間隔變小,且即便使導電層之厚度變厚,亦獲得較小之導電性粒子。就更進一步縮小電極間之間隔、或即便使導電層之厚度變厚亦獲得更進一步小之導電性粒子之觀點而言,上述基材粒子之粒徑係較佳為0.5 μm以上,更佳為2 μm以上,且較佳為3 μm以下。 The particle diameter of the substrate particles is particularly preferably 0.1 μm or more and 5 μm or less. If When the particle diameter of the substrate particles is in the range of 0.1 to 5 μm, the interval between the electrodes becomes small, and even if the thickness of the conductive layer is made thick, smaller conductive particles are obtained. The particle diameter of the substrate particles is preferably 0.5 μm or more, more preferably from the viewpoint of further reducing the interval between the electrodes or increasing the thickness of the conductive layer to obtain further smaller conductive particles. 2 μm or more, and preferably 3 μm or less.

[導電層] [conductive layer]

用以形成上述導電層之金屬並無特別限定。進而,於導電性粒子為整體係導電層之金屬粒子之情形時,用以形成該金屬粒子之金屬並無特別限定。作為該金屬,例如可列舉金、銀、銅、鈀、鉑、鋅、鐵、錫、鉛、鋁、鈷、銦、鎳、鉻、鈦、銻、鉍、鉈、鍺、鎘、矽、鎢、鉬及該等合金等。又,作為上述金屬,可列舉摻錫氧化銦(ITO)及焊錫等。其中,可更進一步降低電極間之連接電阻,因此較佳為包含錫之合金、鎳、鈀、銅或金,更佳為鎳或鈀。構成上述導電層之金屬元素係較佳為包含鎳。上述導電層係較佳為包含選自包含鎳、鎢、鉬、鈀、磷及硼之群中之至少1種,更佳為包含鎳、與磷或硼。構成上述導電層之材料亦可為包含磷及硼等之合金。上述導電層係亦可合金化鎳與鎢或鉬。 The metal for forming the above conductive layer is not particularly limited. Further, in the case where the conductive particles are metal particles of the entire conductive layer, the metal for forming the metal particles is not particularly limited. Examples of the metal include gold, silver, copper, palladium, platinum, zinc, iron, tin, lead, aluminum, cobalt, indium, nickel, chromium, titanium, lanthanum, cerium, lanthanum, cerium, cadmium, cerium, and tungsten. , molybdenum and these alloys. Further, examples of the metal include tin-doped indium oxide (ITO), solder, and the like. Among them, the connection resistance between the electrodes can be further lowered, and therefore it is preferably an alloy containing tin, nickel, palladium, copper or gold, more preferably nickel or palladium. The metal element constituting the above conductive layer preferably contains nickel. The conductive layer preferably contains at least one selected from the group consisting of nickel, tungsten, molybdenum, palladium, phosphorus, and boron, and more preferably contains nickel, phosphorus, or boron. The material constituting the above conductive layer may be an alloy containing phosphorus or boron. The above conductive layer may also alloy nickel with tungsten or molybdenum.

於上述導電層包含磷或硼之情形時,在上述導電層100重量%中,磷與硼之合計之含量係較佳為4重量%以下。若磷與硼之合計之含量為上述上限以下,則鎳等金屬之含量相對變多,因此電極間之連接電阻更進一步變低。於上述 導電層100重量%中,磷與硼之合計之含量係較佳為0.1重量%以上,更佳為0.5重量%以上。 In the case where the conductive layer contains phosphorus or boron, the total content of phosphorus and boron in 100% by weight of the conductive layer is preferably 4% by weight or less. When the total content of phosphorus and boron is at most the above upper limit, the content of metal such as nickel is relatively increased, and thus the connection resistance between the electrodes is further lowered. Above The content of the total of phosphorus and boron in 100% by weight of the conductive layer is preferably 0.1% by weight or more, more preferably 0.5% by weight or more.

上述芯物質、上述導電層、及上述第2導電層中包含最多之金屬元素係較佳為包含錫之合金、鎳、鈀、銅或金,更佳為鎳或鈀。 The core material, the conductive layer, and the metal element containing the most of the second conductive layer are preferably an alloy containing tin, nickel, palladium, copper or gold, more preferably nickel or palladium.

如導電性粒子1,上述導電層係亦可由1個層而形成。進而,如導電性粒子11、21,上述導電層係亦可由複數層而形成。即,導電層可為單層,亦可具有2層以上之積層構造。於導電層由複數層而形成之情形時,最外層係較佳為金層、鎳層、鈀層、銅層、或包含錫與銀之合金層,更佳為金層或鈀層,特佳為金層。於最外層為該等較佳之導電層之情形時,電極間之連接電阻更進一步變低。又,於最外層為金層之情形時,耐腐蝕性更進一步變高。 For example, the conductive particles 1 may be formed of one layer. Further, as the conductive particles 11 and 21, the conductive layer may be formed of a plurality of layers. That is, the conductive layer may be a single layer or may have a laminated structure of two or more layers. In the case where the conductive layer is formed of a plurality of layers, the outermost layer is preferably a gold layer, a nickel layer, a palladium layer, a copper layer, or an alloy layer containing tin and silver, more preferably a gold layer or a palladium layer. It is a gold layer. In the case where the outermost layer is such a preferred conductive layer, the connection resistance between the electrodes is further lowered. Further, when the outermost layer is a gold layer, the corrosion resistance is further increased.

於上述基材粒子之表面上形成導電層之方法並無特別限定。作為形成導電層之方法,例如可列舉如下等方法:利用非電解鍍敷之方法;利用電鍍之方法;利用物理蒸鍍;及將金屬粉末或者包含金屬粉末與黏合劑之膏塗敷至基材粒子之表面。其中,導電層之形成較為簡便,因此較佳為利用非電解鍍敷之方法。作為利用上述物理蒸鍍之方法,可列舉真空蒸鍍、離子電鍍及離子濺鍍等方法。 A method of forming a conductive layer on the surface of the substrate particles is not particularly limited. Examples of the method of forming the conductive layer include a method using electroless plating, a method using electroplating, a physical vapor deposition, and a metal powder or a paste containing a metal powder and a binder. The surface of the particle. Among them, the formation of the conductive layer is relatively simple, and therefore it is preferable to use a method of electroless plating. Examples of the method of using the above physical vapor deposition include vacuum vapor deposition, ion plating, and ion sputtering.

上述導電性粒子之平均粒徑係較佳為0.11 μm以上,更佳為0.5 μm以上,進而較佳為0.51 μm以上,特佳為1 μm以上,且較佳為100 μm以下,更佳為20 μm以下,進而較佳為5.6 μm以下,特佳為3.6 μm以下。若導電性粒子之平 均粒徑為上述下限以上及上述上限以下,則於使用導電性粒子連接電極間之情形時,導電性粒子與電極之接觸面積充分地變大,且於形成導電層時,變得難以形成經凝聚之導電性粒子。又,經由導電性粒子而連接之電極間之間隔變得過大,且導電層變得難以自基材粒子之表面剝離。 The average particle diameter of the conductive particles is preferably 0.11 μm or more, more preferably 0.5 μm or more, further preferably 0.51 μm or more, particularly preferably 1 μm or more, and more preferably 100 μm or less, more preferably 20 It is preferably 5.6 μm or less, and particularly preferably 3.6 μm or less. If the conductive particles are flat When the average particle diameter is not less than the above lower limit and not more than the above upper limit, when the conductive particles are connected between the electrodes, the contact area between the conductive particles and the electrode is sufficiently increased, and when the conductive layer is formed, it becomes difficult to form a via. Condensed conductive particles. Moreover, the interval between the electrodes connected via the conductive particles is excessively large, and the conductive layer is less likely to be peeled off from the surface of the substrate particles.

上述導電性粒子之「平均粒徑」係表示數平均粒徑。導電性粒子之平均粒徑係藉由如下方式而求出:藉由電子顯微鏡或光學顯微鏡觀察50個任意之導電性粒子,從而算出平均值。 The "average particle diameter" of the above conductive particles means a number average particle diameter. The average particle diameter of the conductive particles was determined by observing 50 arbitrary conductive particles by an electron microscope or an optical microscope to calculate an average value.

上述導電層之厚度係較佳為0.005 μm以上,更佳為0.01 μm以上,且較佳為1 μm以下,更佳為0.3 μm以下。若導電層之厚度為上述下限以上及上述上限以下,則獲得充分之導電性,且導電性粒子不會變得過硬,而於電極間之連接時,導電性粒子充分變形。 The thickness of the above conductive layer is preferably 0.005 μm or more, more preferably 0.01 μm or more, and is preferably 1 μm or less, more preferably 0.3 μm or less. When the thickness of the conductive layer is not less than the above lower limit and not more than the above upper limit, sufficient conductivity is obtained, and the conductive particles are not excessively hard, and the conductive particles are sufficiently deformed at the time of connection between the electrodes.

於上述導電層由複數層而形成之情形時,最外層之導電層之厚度係較佳為0.001 μm以上,更佳為0.01 μm以上,且較佳為0.5 μm以下,更佳為0.1 μm以下。若上述最外層之導電層之厚度為上述下限以上及上述上限以下,則可使利用最外層之導電層之被覆變得均勻,可充分地提高耐腐蝕性,且可充分地降低電極間之連接電阻。 When the conductive layer is formed of a plurality of layers, the thickness of the outermost conductive layer is preferably 0.001 μm or more, more preferably 0.01 μm or more, and is preferably 0.5 μm or less, more preferably 0.1 μm or less. When the thickness of the outermost conductive layer is not less than the above lower limit and not more than the above upper limit, the coating of the outermost conductive layer can be made uniform, the corrosion resistance can be sufficiently improved, and the connection between the electrodes can be sufficiently reduced. resistance.

上述導電層之厚度係藉由如下方式而測定:例如,使用穿透式電子顯微鏡(TEM,Transmission Electron Microscope),觀察導電性粒子或附有絕緣性粒子之導電性粒子之剖面。 The thickness of the conductive layer is measured by, for example, observing a cross section of conductive particles or conductive particles with insulating particles using a transmission electron microscope (TEM).

每個上述導電性粒子之上述導電層之外側之表面的突起 係較佳為3個以上,更佳為5個以上。上述突起數量之上限並無特別限定。突起數量之上限係可考慮導電性粒子之平均粒徑等而適當選擇。 Protrusions on the outer surface of the above-mentioned conductive layer of each of the above conductive particles It is preferably 3 or more, more preferably 5 or more. The upper limit of the number of the above protrusions is not particularly limited. The upper limit of the number of protrusions can be appropriately selected in consideration of the average particle diameter of the conductive particles and the like.

[芯物質] [core material]

上述芯物質係埋設於上述導電層中,藉此上述導電層於外側之表面具有複數個突起。 The core material is embedded in the conductive layer, whereby the conductive layer has a plurality of protrusions on the outer surface.

作為形成上述突起之方法,可列舉如下等方法:於在基材粒子之表面上形成第1導電層後,在該第1導電層上配置芯物質,接著形成第2導電層;及於在基材粒子之表面上,形成導電層之中途階段,添加芯物質。 As a method of forming the protrusions, a method of forming a first conductive layer on the surface of the substrate particles, disposing a core material on the first conductive layer, and then forming a second conductive layer; On the surface of the material particles, a core material is added in the middle of the formation of the conductive layer.

作為構成上述芯物質之物質,可列舉導電性物質及非導電性物質。作為上述導電性物質,例如可列舉金屬、金屬之氧化物、石墨等導電性非金屬及導電性聚合物等。作為上述導電性聚合物,可列舉聚乙炔等。作為上述非導電性物質,可列舉矽土、氧化鋁、鈦酸鋇及氧化鋯等。其中,由於可提高導電性,進而可有效地降低連接電阻,因此金屬較佳。上述芯物質係較佳為金屬粒子。 Examples of the material constituting the core material include a conductive material and a non-conductive material. Examples of the conductive material include a metal, a metal oxide, a conductive non-metal such as graphite, and a conductive polymer. Examples of the conductive polymer include polyacetylene and the like. Examples of the non-conductive material include alumina, alumina, barium titanate, and zirconia. Among them, since the conductivity can be improved and the connection resistance can be effectively lowered, the metal is preferable. The above core material is preferably a metal particle.

作為上述金屬,例如可列舉金、銀、銅、鉑、鋅、鐵、鉛、錫、鋁、鈷、銦、鎳、鉻、鈦、銻、鉍、鍺及鎘等金屬、以及錫-鉛合金、錫-銅合金、錫-銀合金、錫-鉛-銀合金及碳化鎢等由2種類以上之金屬而構成之合金等。其中,較佳為鎳、銅、銀或金。構成上述芯物質之金屬可與構成上述導電層之金屬相同,亦可不同。構成上述芯物質之金屬係較佳為包含構成上述導電層之金屬。構成上述芯 物質之金屬係較佳為包含鎳。構成上述芯物質之金屬係較佳為包含鎳。 Examples of the metal include metals such as gold, silver, copper, platinum, zinc, iron, lead, tin, aluminum, cobalt, indium, nickel, chromium, titanium, ruthenium, osmium, iridium, and cadmium, and tin-lead alloys. An alloy composed of two or more kinds of metals such as tin-copper alloy, tin-silver alloy, tin-lead-silver alloy, and tungsten carbide. Among them, nickel, copper, silver or gold is preferred. The metal constituting the core material may be the same as or different from the metal constituting the above-mentioned conductive layer. The metal constituting the core material preferably contains a metal constituting the conductive layer. Constituting the above core The metal of the substance preferably contains nickel. The metal constituting the core material preferably contains nickel.

上述芯物質之形狀並無特別限定。芯物質之形狀較佳為塊狀。作為芯物質,例如可列舉粒子狀之塊、複數個微小粒子凝聚之凝聚塊、及不定形之塊等。 The shape of the core material is not particularly limited. The shape of the core material is preferably a block shape. Examples of the core material include a particulate block, agglomerates in which a plurality of fine particles are agglomerated, and an amorphous block.

上述芯物質之平均直徑(平均粒徑)係較佳為0.001 μm以上,更佳為0.05 μm以上,且較佳為0.9 μm以下,更佳為0.2 μm以下。若上述芯物質之平均直徑為上述下限以上及上述上限以下,則可有效地降低電極間之連接電阻。 The average diameter (average particle diameter) of the core material is preferably 0.001 μm or more, more preferably 0.05 μm or more, and is preferably 0.9 μm or less, more preferably 0.2 μm or less. When the average diameter of the core material is not less than the above lower limit and not more than the above upper limit, the connection resistance between the electrodes can be effectively reduced.

上述芯物質之「平均直徑(平均粒徑)」係表示數平均直徑(數平均粒徑)。芯物質之平均直徑係藉由如下方式而求出:藉由電子顯微鏡或光學顯微鏡觀察50個任意之芯物質而算出平均值。 The "average diameter (average particle diameter)" of the above-mentioned core material means a number average diameter (number average particle diameter). The average diameter of the core material was determined by observing 50 arbitrary core materials by an electron microscope or an optical microscope to calculate an average value.

亦可於上述芯物質之表面上,配置無機粒子。配置於芯物質之表面上之無機粒子係較佳為複數個。亦可於芯物質之表面附著有無機粒子。亦可使用包括此種無機粒子與芯物質之複合粒子。無機粒子之大小(平均直徑)係較佳為小於芯物質之大小(平均直徑),上述無機粒子係較佳為無機微粒子。 Inorganic particles may also be disposed on the surface of the above-mentioned core material. The inorganic particles disposed on the surface of the core material are preferably plural. Inorganic particles may also be attached to the surface of the core material. Composite particles including such inorganic particles and core materials can also be used. The size (average diameter) of the inorganic particles is preferably smaller than the size (average diameter) of the core material, and the inorganic particles are preferably inorganic fine particles.

作為配置於上述芯物質之表面上之上述無機粒子之材料,可列舉鈦酸鋇(莫氏硬度為4.5)、矽土(二氧化矽、莫氏硬度為6~7)、氧化鋯(莫氏硬度為8~9)、氧化鋁(莫氏硬度為9)、碳化鎢(莫氏硬度為9)及金剛石(莫氏硬度為10)等。上述無機粒子係較佳為矽土、氧化鋯、氧化鋁、碳化 鎢或金剛石,亦較佳為矽土、氧化鋯、氧化鋁或金剛石。上述無機粒子之莫氏硬度係較佳為5以上,更佳為6以上。上述無機粒子之莫氏硬度係較佳為大於上述導電層之莫氏硬度。上述無機粒子之莫氏硬度係更大於上述第2導電層之莫氏硬度。上述無機粒子之莫氏硬度與上述導電層之莫氏硬度之差的絕對值、及上述無機粒子之莫氏硬度與上述第2導電層之莫氏硬度之差的絕對值係較佳為0.1以上,更佳為0.2以上、進而較佳為0.5以上,特佳為1以上。又,於導電層由複數層而形成之情形時,相較構成複數層之所有金屬,無機粒子較硬者更進一步有效地發揮連接電阻之降低效果。 Examples of the material of the inorganic particles disposed on the surface of the core material include barium titanate (Mohs hardness of 4.5), alumina (cerium oxide, Mohs hardness of 6 to 7), and zirconia (Mohs Hardness is 8 to 9), alumina (Mohs hardness is 9), tungsten carbide (Mohs hardness is 9), and diamond (Mohs hardness is 10). The above inorganic particles are preferably alumina, zirconia, alumina, carbonization. Tungsten or diamond is also preferably alumina, zirconia, alumina or diamond. The Mohs hardness of the inorganic particles is preferably 5 or more, and more preferably 6 or more. The Mohs hardness of the inorganic particles is preferably greater than the Mohs hardness of the conductive layer. The Mohs hardness of the inorganic particles is greater than the Mohs hardness of the second conductive layer. The absolute value of the difference between the Mohs hardness of the inorganic particles and the Mohs hardness of the conductive layer, and the absolute value of the difference between the Mohs hardness of the inorganic particles and the Mohs hardness of the second conductive layer is preferably 0.1 or more. More preferably, it is 0.2 or more, further preferably 0.5 or more, and particularly preferably 1 or more. Further, in the case where the conductive layer is formed of a plurality of layers, the effect of lowering the connection resistance is more effectively exhibited than the harder particles of all the metals constituting the plurality of layers.

上述無機粒子之平均粒徑係較佳為0.0001 μm以上,更佳為0.005 μm以上,且較佳為0.5 μm以下,更佳為0.1 μm以下。若上述無機粒子之平均粒徑為上述下限以上及上述上限以下,則可有效地降低電極間之連接電阻。 The average particle diameter of the inorganic particles is preferably 0.0001 μm or more, more preferably 0.005 μm or more, and is preferably 0.5 μm or less, more preferably 0.1 μm or less. When the average particle diameter of the inorganic particles is not less than the above lower limit and not more than the above upper limit, the connection resistance between the electrodes can be effectively reduced.

上述無機粒子之「平均粒徑」係表示數平均粒徑。無機粒子之平均粒徑係藉由如下方式而求出:藉由電子顯微鏡或光學顯微鏡觀察50個任意之無機粒子而算出平均值。 The "average particle diameter" of the above inorganic particles means a number average particle diameter. The average particle diameter of the inorganic particles was determined by observing 50 arbitrary inorganic particles by an electron microscope or an optical microscope to calculate an average value.

於使用於上述芯物質之表面上配置有無機粒子之複合粒子之情形時,上述複合粒子之平均直徑(平均粒徑)係較佳為0.0012 μm以上,更佳為0.0502 μm以上,且較佳為1.9 μm以下,更佳為1.2 μm以下。若上述複合粒子之平均直徑為上述下限以上及上述上限以下,則可有效地降低電極間之連接電阻。 In the case where the composite particles of the inorganic particles are disposed on the surface of the core material, the average diameter (average particle diameter) of the composite particles is preferably 0.0012 μm or more, more preferably 0.0502 μm or more, and is preferably It is 1.9 μm or less, more preferably 1.2 μm or less. When the average diameter of the composite particles is not less than the above lower limit and not more than the above upper limit, the connection resistance between the electrodes can be effectively reduced.

上述複合粒子之「平均直徑(平均粒徑)」係表示數平均直徑(數平均粒徑)。上述複合粒子之平均直徑係藉由如下方式而求出:藉由電子顯微鏡或光學顯微鏡觀察50個任意之複合粒子,從而算出平均值。 The "average diameter (average particle diameter)" of the above composite particles means a number average diameter (number average particle diameter). The average diameter of the composite particles was determined by observing 50 arbitrary composite particles by an electron microscope or an optical microscope to calculate an average value.

[絕緣物質] [insulating substance]

本發明之導電性粒子係較佳為包括配置於上述導電層之表面上之絕緣物質。於該情形時,若將導電性粒子使用於電極間之連接,則可防止鄰接之電極間之短路。具體而言,於複數個導電性粒子接觸時,在複數個電極間存在絕緣物質,因此可防止於橫方向上鄰接之電極間之短路,而並非上下之電極間之短路。再者,於電極間之連接時,藉由2個電極而對導電性粒子進行加壓,藉此可容易地排除導電性粒子之導電層與電極之間之絕緣物質。導電性粒子於導電層之外側之表面具有複數個突起,因此可容易地排除導電性粒子之導電層與電極之間之絕緣物質。 The conductive particles of the present invention preferably include an insulating material disposed on the surface of the conductive layer. In this case, when the conductive particles are used for the connection between the electrodes, the short circuit between the adjacent electrodes can be prevented. Specifically, when a plurality of conductive particles are in contact with each other, an insulating material is present between the plurality of electrodes, so that short circuits between adjacent electrodes in the lateral direction can be prevented, and short circuits between the upper and lower electrodes are not obtained. Further, when the electrodes are connected, the conductive particles are pressurized by the two electrodes, whereby the insulating material between the conductive layers of the conductive particles and the electrodes can be easily removed. Since the conductive particles have a plurality of protrusions on the surface on the outer side of the conductive layer, the insulating material between the conductive layer of the conductive particles and the electrode can be easily excluded.

於電極間之壓接時,可更進一步容易地排除上述絕緣物質,故上述絕緣物質係較佳為絕緣性粒子。 In the case of pressure bonding between the electrodes, the insulating material can be further removed more easily, and therefore the insulating material is preferably insulating particles.

作為上述絕緣物質之材料即絕緣性樹脂之具體例,可列舉聚烯烴類、(甲基)丙烯酸酯聚合體、(甲基)丙烯酸酯共聚物、嵌段聚合物、熱塑性樹脂、熱塑性樹脂之交聯物、熱固性樹脂及水溶性樹脂等。 Specific examples of the insulating resin which is a material of the insulating material include a polyolefin, a (meth) acrylate polymer, a (meth) acrylate copolymer, a block polymer, a thermoplastic resin, and a thermoplastic resin. Linkage, thermosetting resin and water-soluble resin.

作為上述聚烯烴類,可列舉聚乙烯、乙烯-乙酸乙烯酯共聚物、及乙烯-丙烯酸酯共聚物等。作為上述(甲基)丙烯酸酯聚合體,可列舉聚(甲基)丙烯甲酯、(甲基)丙烯聚乙 酯及(甲基)丙烯聚丁酯等。作為上述嵌段聚合物,可列舉聚苯乙烯、苯乙烯-丙烯酸酯共聚物、SB(Styrene Butadiene)型苯乙烯-丁二烯嵌段共聚物、及SBS(Styrene Butadiene Styrene)型苯乙烯-丁二烯嵌段共聚物、以及該等氫添加物等。作為上述熱塑性樹脂,可列舉乙烯基聚合體、及乙烯基共聚物等。作為上述熱固性樹脂,可列舉環氧樹脂、酚樹脂、及三聚氰胺樹脂等。作為上述水溶性樹脂,可列舉聚乙烯醇、聚丙烯酸、聚丙烯酸醯胺酯、聚乙烯吡咯啶酮、環氧乙烷、及甲基纖維素等。其中,較佳為水溶性樹脂,更佳為聚乙烯醇。 Examples of the polyolefins include polyethylene, an ethylene-vinyl acetate copolymer, and an ethylene-acrylate copolymer. Examples of the (meth) acrylate polymer include poly(methyl) propylene methyl ester and (meth) propylene polyethylene. Ester and (meth) propylene polybutyl ester. Examples of the block polymer include polystyrene, styrene-acrylate copolymer, SB (Styrene Butadiene) type styrene-butadiene block copolymer, and SBS (Styrene Butadiene Styrene) type styrene-butyl a diene block copolymer, such hydrogen additives, and the like. Examples of the thermoplastic resin include a vinyl polymer and a vinyl copolymer. Examples of the thermosetting resin include an epoxy resin, a phenol resin, and a melamine resin. Examples of the water-soluble resin include polyvinyl alcohol, polyacrylic acid, polyamidamide, polyvinylpyrrolidone, ethylene oxide, and methyl cellulose. Among them, a water-soluble resin is preferred, and polyvinyl alcohol is more preferred.

作為於上述導電層之表面上配置絕緣物質之方法,可列舉化學方法、及物理或者機械方法等。作為上述化學方法,例如可列舉界面聚合法、粒子存在下之懸浮聚合法、及乳化聚合法等。作為上述物理或者機械方法,可列舉噴霧乾燥、雜交、靜電附著法、噴霧法、浸鍍及真空蒸鍍之方法等。其中,由於絕緣物質難以脫附,故較佳為經由化學鍵合而將上述絕緣物質配置於上述導電層之表面之方法。 Examples of the method of disposing the insulating material on the surface of the conductive layer include chemical methods, physical or mechanical methods, and the like. Examples of the chemical method include an interfacial polymerization method, a suspension polymerization method in the presence of particles, and an emulsion polymerization method. Examples of the physical or mechanical method include spray drying, hybridization, electrostatic adhesion, spray, immersion, and vacuum evaporation. Among them, since the insulating material is hard to be desorbed, it is preferable to dispose the insulating material on the surface of the conductive layer via chemical bonding.

上述絕緣物質之平均直徑(平均粒徑)係可根據導電性粒子之粒徑及導電性粒子之用途等而適當選擇。上述絕緣物質之平均直徑(平均粒徑)係較佳為0.005 μm以上,更佳為0.01 μm以上,且較佳為1 μm以下,更佳為0.5 μm以下。若絕緣物質之平均直徑為上述下限以上,則於導電性粒子分散於黏合劑樹脂中時,複數個導電性粒子之導電層間變 得難以接觸。若絕緣性粒子之平均直徑為上述上限以下,則於電極間之連接時,為了排除電極與導電性粒子之間之絕緣物質,無需使壓力變得過高,亦無需於高溫下進行加熱。 The average diameter (average particle diameter) of the insulating material can be appropriately selected depending on the particle diameter of the conductive particles and the use of the conductive particles. The average diameter (average particle diameter) of the insulating material is preferably 0.005 μm or more, more preferably 0.01 μm or more, and is preferably 1 μm or less, more preferably 0.5 μm or less. When the average diameter of the insulating material is at least the above lower limit, when the conductive particles are dispersed in the binder resin, the conductive layers of the plurality of conductive particles become different. It is difficult to get in touch. When the average diameter of the insulating particles is not more than the above upper limit, in order to remove the insulating material between the electrode and the conductive particles during the connection between the electrodes, it is not necessary to increase the pressure, and it is not necessary to heat at a high temperature.

上述絕緣物質之「平均直徑(平均粒徑)」係表示數平均直徑(數平均粒徑)。絕緣物質之平均直徑係使用粒度分佈測定裝置等而求出。 The "average diameter (average particle diameter)" of the above insulating material means a number average diameter (number average particle diameter). The average diameter of the insulating material is determined using a particle size distribution measuring device or the like.

(導電材料) (conductive material)

本發明之導電材料包含上述導電性粒子、及黏合劑樹脂。上述導電性粒子係較佳為分散於黏合劑樹脂中而用作導電材料。上述導電材料係較佳為各向異性導電材料。 The conductive material of the present invention comprises the above-mentioned conductive particles and a binder resin. The conductive particles are preferably dispersed in a binder resin and used as a conductive material. The above conductive material is preferably an anisotropic conductive material.

上述黏合劑樹脂並無特別限定。作為上述黏合劑樹脂,使用公知之絕緣性之樹脂。 The above binder resin is not particularly limited. As the above-mentioned binder resin, a known insulating resin is used.

作為上述黏合劑樹脂,例如可列舉乙烯基樹脂、熱塑性樹脂、硬化性樹脂、熱塑性嵌段共聚物、及彈性體等。上述黏合劑樹脂係可僅使用1種,亦可併用2種以上。 Examples of the binder resin include a vinyl resin, a thermoplastic resin, a curable resin, a thermoplastic block copolymer, and an elastomer. The binder resin may be used alone or in combination of two or more.

作為上述乙烯基樹脂,例如可列舉乙酸乙烯酯樹脂、丙烯酸樹脂、及苯乙烯樹脂等。作為上述熱塑性樹脂,例如可列舉聚烯烴樹脂、乙烯-乙酸乙烯酯共聚物、及聚醯胺樹脂等。作為上述硬化性樹脂,例如可列舉環氧樹脂、胺基甲酸酯樹脂、聚醯亞胺樹脂、及不飽和聚酯樹脂等。再者,上述硬化性樹脂亦可為常溫硬化型樹脂、熱硬化型樹脂、光硬化型樹脂、或濕氣硬化型樹脂。上述硬化性樹脂亦可與硬化劑併用。作為上述熱塑性嵌段共聚物,例如可 列舉苯乙烯-丁二烯-苯乙烯嵌段共聚物、苯乙烯-異戊二烯-苯乙烯嵌段共聚物、苯乙烯-丁二烯-苯乙烯嵌段共聚物之氫添加物、及苯乙烯-異戊二烯-苯乙烯嵌段共聚物之氫添加物等。作為上述彈性體,例如可列舉苯乙烯-丁二烯共聚合橡膠、及丙烯腈-苯乙烯嵌段共聚合橡膠等。 Examples of the vinyl resin include a vinyl acetate resin, an acrylic resin, and a styrene resin. Examples of the thermoplastic resin include a polyolefin resin, an ethylene-vinyl acetate copolymer, and a polyamide resin. Examples of the curable resin include an epoxy resin, a urethane resin, a polyimide resin, and an unsaturated polyester resin. Further, the curable resin may be a room temperature curing resin, a thermosetting resin, a photocurable resin, or a moisture curing resin. The curable resin may be used in combination with a curing agent. As the above thermoplastic block copolymer, for example, Listed styrene-butadiene-styrene block copolymer, styrene-isoprene-styrene block copolymer, hydrogen addition of styrene-butadiene-styrene block copolymer, and benzene Hydrogen additive of ethylene-isoprene-styrene block copolymer, and the like. Examples of the elastomer include a styrene-butadiene copolymer rubber and an acrylonitrile-styrene block copolymer rubber.

上述導電材料係除上述導電性粒子及上述黏合劑樹脂外,例如亦可包含填充劑、增量劑、軟化劑、塑化劑、聚合觸媒、硬化觸媒、著色劑、抗氧劑、熱穩定劑、光穩定劑、紫外線吸收劑、潤滑劑、抗靜電劑、及阻燃劑等各種添加劑。 The conductive material may contain, in addition to the conductive particles and the binder resin, a filler, a bulking agent, a softener, a plasticizer, a polymerization catalyst, a curing catalyst, a colorant, an antioxidant, and a heat. Various additives such as stabilizers, light stabilizers, ultraviolet absorbers, lubricants, antistatic agents, and flame retardants.

使上述導電性粒子分散至上述黏合劑樹脂中之方法係可使用先前公知之分散方法,並無特別限定。作為使上述導電性粒子分散至上述黏合劑樹脂中之方法,例如可列舉如下等方法:於在上述黏合劑樹脂中添加上述導電性粒子後,藉由行星混合器等混練而使之分散;使用均化器等使上述導電性粒子均勻地分散於水或有機溶劑中後,添加至上述黏合劑樹脂中,從而藉由行星混合器等混練而使之分散;及於藉由水或有機溶劑等稀釋上述黏合劑樹脂後,添加上述導電性粒子,從而藉由行星混合器等混練而使之分散。 The method of dispersing the above-mentioned conductive particles in the above-mentioned binder resin can be a conventionally known dispersion method, and is not particularly limited. As a method of dispersing the above-mentioned conductive particles in the above-mentioned binder resin, for example, a method in which the conductive particles are added to the binder resin and then kneaded by a planetary mixer or the like is dispersed; After the conductive particles are uniformly dispersed in water or an organic solvent, the conductive particles are added to the binder resin to be dispersed by a planetary mixer or the like, and are dispersed by water or an organic solvent. After the binder resin is diluted, the conductive particles are added and dispersed by a planetary mixer or the like.

本發明之導電材料係可用作導電膏及導電膜等。於本發明之導電材料為導電膜之情形時,亦可於包含導電性粒子之導電膜上,積層有不包含導電性粒子之膜。上述導電膏係較佳為各向異性導電膏。上述導電膜係較佳為各向異性 導電膜。 The conductive material of the present invention can be used as a conductive paste, a conductive film, or the like. When the conductive material of the present invention is a conductive film, a film containing no conductive particles may be laminated on the conductive film containing the conductive particles. The above conductive paste is preferably an anisotropic conductive paste. The above conductive film is preferably anisotropic Conductive film.

於100重量%之上述導電材料中,上述黏合劑樹脂之含量係較佳為10重量%以上,更佳為30重量%以上,進而較佳為50重量%以上,特佳為70重量%以上,且較佳為99.99重量%以下,更佳為99.9重量%以下。若上述黏合劑樹脂之含量為上述下限以上及上述上限以下,則導電性粒子有效地配置於電極間,從而藉由導電材料連接之連接對象構件之連接可靠性更進一步變高。 The content of the binder resin is preferably 10% by weight or more, more preferably 30% by weight or more, still more preferably 50% by weight or more, and particularly preferably 70% by weight or more, based on 100% by weight of the conductive material. It is preferably 99.99% by weight or less, more preferably 99.9% by weight or less. When the content of the binder resin is not less than the above lower limit and not more than the above upper limit, the conductive particles are effectively disposed between the electrodes, and the connection reliability of the member to be joined connected by the conductive material is further increased.

於100重量%之上述導電材料中,上述導電性粒子之含量係較佳為0.01重量%以上,更佳為0.1重量%以上,且較佳為40重量%以下,更佳為20重量%以下,進而較佳為10重量%以下。若上述導電性粒子之含量為上述下限以上及上述上限以下,則電極間之導通可靠性更進一步變高。 The content of the conductive particles is preferably 0.01% by weight or more, more preferably 0.1% by weight or more, and preferably 40% by weight or less, and more preferably 20% by weight or less, based on 100% by weight of the conductive material. Further, it is preferably 10% by weight or less. When the content of the conductive particles is not less than the above lower limit and not more than the above upper limit, the conduction reliability between the electrodes is further increased.

(連接構造體) (connection structure)

使用本發明之導電性粒子、或使用包含該導電性粒子與黏合劑樹脂之導電材料,將連接對象構件連接,藉此可獲得連接構造體。 The connection structure can be obtained by using the conductive particles of the present invention or by using a conductive material containing the conductive particles and the binder resin to connect the connection member.

較佳為,上述連接構造體係如下之連接構造體:包括第1連接對象構件、第2連接對象構件、及將第1、第2連接對象構件連接之連接部,且該連接部由本發明之導電性粒子而形成、或由包含該導電性粒子與黏合劑樹脂之導電材料(各向異性導電材料等)而形成。於使用有導電性粒子之情形時,連接部本身為導電性粒子。即,第1、第2連接對象構件係藉由導電性粒子連接。 Preferably, the connection structure includes a first connection target member, a second connection target member, and a connection portion that connects the first and second connection target members, and the connection portion is electrically conductive according to the present invention. It is formed of a magnetic particle or a conductive material (an anisotropic conductive material or the like) containing the conductive particle and the binder resin. In the case where conductive particles are used, the connecting portion itself is a conductive particle. In other words, the first and second connection target members are connected by conductive particles.

於圖4中,以前視剖面圖模式性地表示使用有本發明之第1實施形態之導電性粒子之連接構造體。 In Fig. 4, a front cross-sectional view schematically shows a connection structure using the conductive particles according to the first embodiment of the present invention.

圖4所示之連接構造體51包括第1連接對象構件52、第2連接對象構件53、及將第1、第2連接對象構件52、53連接之連接部54。連接部54係藉由使包含導電性粒子1之導電材料硬化而形成。再者,於圖4中,為了圖示之方便起見,導電性粒子1係表示為略圖。 The connection structure 51 shown in FIG. 4 includes a first connection object member 52, a second connection object member 53, and a connection portion 54 that connects the first and second connection object members 52 and 53. The connecting portion 54 is formed by curing the conductive material containing the conductive particles 1. In addition, in FIG. 4, for the convenience of illustration, the electroconductive particle 1 is shown in the outline.

第1連接對象構件52係於上表面52a(表面),具有複數個電極52b。第2連接對象構件53係於下表面53a(表面)具有複數個電極53b。電極52b與電極53b係藉由1個或複數個導電性粒子1而電性連接。因此,第1、第2連接對象構件52、53係藉由導電性粒子1而電性連接。 The first connection object member 52 is attached to the upper surface 52a (surface) and has a plurality of electrodes 52b. The second connection object member 53 has a plurality of electrodes 53b on the lower surface 53a (surface). The electrode 52b and the electrode 53b are electrically connected by one or a plurality of conductive particles 1. Therefore, the first and second connection target members 52 and 53 are electrically connected by the conductive particles 1 .

上述連接構造體之製造方法並無特別限定。作為連接構造體之製造方法之一例,可列舉如下等方法:於在第1連接對象構件與第2連接對象構件之間配置上述導電材料而獲得積層體後,對該積層體進行加熱及加壓。 The method for producing the above-described connection structure is not particularly limited. An example of the method of manufacturing the connection structure is a method in which the conductive material is placed between the first connection member and the second connection member to obtain a laminate, and then the laminate is heated and pressurized. .

上述加壓之壓力為9.8×104~4.9×106 Pa左右。上述加熱之溫度為120~220℃左右。 The pressure of the above pressurization is about 9.8 × 10 4 to 4.9 × 10 6 Pa. The heating temperature is about 120 to 220 °C.

作為上述連接對象構件,具體而言,可列舉:半導體晶片、電容器、及二極體等電子零件;以及印刷基板、軟性印刷基板、及玻璃基板等電路基板等電子零件等。上述連接對象構件係較佳為電子零件。上述導電性粒子係較佳為使用於電子零件之電極之電性連接。 Specific examples of the connection target member include electronic components such as a semiconductor wafer, a capacitor, and a diode, and electronic components such as a printed circuit board, a flexible printed circuit board, and a circuit board such as a glass substrate. The connection target member is preferably an electronic component. The conductive particles are preferably electrically connected to electrodes of an electronic component.

作為設置於上述連接對象構件之電極,可列舉金電極、 鎳電極、錫電極、鋁電極、銅電極、鉬電極、及鎢電極等金屬電極。於上述連接對象構件為軟性印刷基板之情形時,上述電極係較佳為金電極、鎳電極、錫電極、或銅電極。於上述連接對象構件為玻璃基板之情形時,上述電極係較佳為鋁電極、銅電極、鉬電極或鎢電極。再者,於上述電極為鋁電極之情形時,可為僅由鋁形成之電極,亦可為於金屬氧化物層之表面上積層有鋁層之電極。作為上述金屬氧化物層之材料,可列舉摻雜有3價之金屬元素之氧化銦、及摻雜有3價之金屬元素之氧化鋅等。作為上述3價之金屬元素,可列舉Sn、Al及Ga等。 Examples of the electrode provided in the connection target member include a gold electrode, Metal electrodes such as a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, and a tungsten electrode. In the case where the connection target member is a flexible printed circuit board, the electrode system is preferably a gold electrode, a nickel electrode, a tin electrode, or a copper electrode. In the case where the connection target member is a glass substrate, the electrode system is preferably an aluminum electrode, a copper electrode, a molybdenum electrode or a tungsten electrode. Further, in the case where the electrode is an aluminum electrode, it may be an electrode formed only of aluminum, or an electrode in which an aluminum layer is laminated on the surface of the metal oxide layer. Examples of the material of the metal oxide layer include indium oxide doped with a trivalent metal element, and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal element include Sn, Al, Ga, and the like.

以下,列舉實施例及比較例,具體地對本發明進行說明。本發明並不僅僅限定於以下之實施例。 Hereinafter, the present invention will be specifically described by way of examples and comparative examples. The invention is not limited to the following examples.

(實施例1) (Example 1) (1)鈀附著步驟 (1) Palladium attachment step

準備粒徑為5.0 μm之二乙烯基苯樹脂粒子(積水化學工業公司製造之「Micropearl SP-205」)。對該樹脂粒子進行蝕刻、水洗。接著,向包含8重量%之鈀觸媒之100 mL之鈀觸媒化液100 mL中,添加樹脂粒子並攪拌。此後,進行過濾、清洗。向pH值為6之0.5重量%之二甲胺硼烷液,添加樹脂粒子而獲得附著有鈀之樹脂粒子。 Divinylbenzene resin particles ("Micropearl SP-205" manufactured by Sekisui Chemical Co., Ltd.) having a particle diameter of 5.0 μm were prepared. The resin particles were etched and washed with water. Next, to 100 mL of a 100 mL palladium catalyst solution containing 8 wt% of a palladium catalyst, resin particles were added and stirred. Thereafter, filtration and washing are carried out. To the dimethylamine borane solution having a pH of 6 at 0.5% by weight, resin particles were added to obtain resin particles to which palladium adhered.

(2)非電解鍍鎳步驟 (2) Electroless nickel plating step

為了形成鎳-磷導電層,準備包含0.25 mol/L之硫酸鎳、0.25 mol/L之次亞磷酸鈉、0.15 mol/L之檸檬酸鈉、及0.01 mol/L之鉬酸鈉之鍍鎳液(pH值為8.0)。 In order to form a nickel-phosphorus conductive layer, a nickel plating solution containing 0.25 mol/L of nickel sulfate, 0.25 mol/L of sodium hypophosphite, 0.15 mol/L of sodium citrate, and 0.01 mol/L of sodium molybdate is prepared. (pH 8.0).

向1000 mL之純水中,添加所獲得之附著有鈀之樹脂粒子,藉由超音波分散器進行分散,藉此獲得懸浮液。一面以60℃攪拌所獲得之懸浮液,一面將上述鍍鎳液緩緩地滴下至懸浮液,而進行非電解鍍鎳。此後,藉由對懸浮液進行過濾而取出粒子並進行水洗、乾燥,藉此由鎳-磷層(鎳-鉬-磷層(Ni-Mo-P層))即第1導電層(厚度為5.2 nm)被覆樹脂粒子,從而獲得形成有第1導電層之粒子。 The obtained palladium-attached resin particles were added to 1000 mL of pure water, and dispersed by an ultrasonic disperser, thereby obtaining a suspension. While the obtained suspension was stirred at 60 ° C, the nickel plating solution was gradually dropped to the suspension to carry out electroless nickel plating. Thereafter, the particles were taken out by filtration of the suspension, washed with water, and dried, whereby a nickel-phosphorus layer (nickel-molybdenum-phosphorus layer (Ni-Mo-P layer)), that is, a first conductive layer (thickness: 5.2) was used. The resin particles are coated with nm to obtain particles in which the first conductive layer is formed.

(3)芯物質附著步驟及非電解鍍鎳步驟 (3) Core substance attachment step and electroless nickel plating step

準備氧化鋁(Al2O3)粒子漿料(平均粒徑為100 nm)。使用形成有第1導電層之粒子與金屬粒子漿料被覆。 A slurry of alumina (Al 2 O 3 ) particles (having an average particle diameter of 100 nm) was prepared. The particles in which the first conductive layer is formed are coated with the metal particle slurry.

為了形成鎳-磷導電層,準備包含0.25 mol/L之硫酸鎳、0.25 mol/L之次亞磷酸鈉、0.15 mol/L之檸檬酸鈉、及0.01 mol/L之鉬酸鈉之鍍鎳液(pH值為8.0)。 In order to form a nickel-phosphorus conductive layer, a nickel plating solution containing 0.25 mol/L of nickel sulfate, 0.25 mol/L of sodium hypophosphite, 0.15 mol/L of sodium citrate, and 0.01 mol/L of sodium molybdate is prepared. (pH 8.0).

一面以60℃攪拌所獲得之懸浮液,一面將上述鍍鎳液緩緩地滴下至懸浮液而進行非電解鍍鎳,而形成厚度為90 nm之第2導電層(鎳-鉬-磷層(Ni-Mo-P層))。此後,藉由對懸浮液進行過濾而取出粒子並進行水洗、乾燥,藉此獲得導電性粒子。所獲得之導電性粒子係於第2導電層之外側之表面具有突起,且於第2導電層之突起之內側配置有芯物質。又,於樹脂粒子與芯物質之間,配置有第1導電層。 While stirring the obtained suspension at 60 ° C, the nickel plating solution was gradually dropped to the suspension to carry out electroless nickel plating to form a second conductive layer (nickel-molybdenum-phosphorus layer having a thickness of 90 nm). Ni-Mo-P layer)). Thereafter, the particles were taken out by filtration of the suspension, washed with water, and dried to obtain conductive particles. The conductive particles obtained have protrusions on the outer surface of the second conductive layer, and a core material is disposed inside the protrusions of the second conductive layer. Further, a first conductive layer is disposed between the resin particles and the core material.

(實施例2) (Example 2)

除將氧化鋁(Al2O3)粒子漿料(平均粒徑為100 nm)變更為矽土粒子漿料(平均粒徑為100 nm)外,與實施例1相同地 獲得導電性粒子。 Conductive particles were obtained in the same manner as in Example 1 except that the alumina (Al 2 O 3 ) particle slurry (average particle diameter: 100 nm) was changed to an alumina particle slurry (average particle diameter: 100 nm).

(實施例3) (Example 3)

除將氧化鋁(Al2O3)粒子漿料(平均粒徑為100 nm)變更為碳化鎢(WC)粒子漿料(平均粒徑100 nm)外,與實施例1相同地獲得導電性粒子。 Conductive particles were obtained in the same manner as in Example 1 except that the alumina (Al 2 O 3 ) particle slurry (average particle diameter: 100 nm) was changed to a tungsten carbide (WC) particle slurry (average particle diameter: 100 nm). .

(實施例4~8) (Examples 4 to 8)

除將鎳-磷層即第1導電層之厚度變更為下述所示之值外,與實施例1相同地獲得導電性粒子。 Conductive particles were obtained in the same manner as in Example 1 except that the thickness of the first conductive layer, which is a nickel-phosphorus layer, was changed to the value shown below.

第1導電層之厚度: Thickness of the first conductive layer:

實施例4:10 μm Example 4: 10 μm

實施例5:20 μm Example 5: 20 μm

實施例6:100 μm Example 6: 100 μm

實施例7:750 μm Example 7: 750 μm

實施例8:860 μm Example 8: 860 μm

(實施例9) (Example 9) (1)絕緣性粒子之製作 (1) Production of insulating particles

於在安裝有4口可分離蓋、攪拌翼、三通旋塞、冷卻管及溫度探針之1000 mL之可分離燒瓶中,以固形分率成為5重量%之方式,將包含100 mmol之甲基丙烯酸甲酯、1 mmol之氯化N,N,N-三甲基-N-2-甲基丙烯醯氧基乙基銨、及1 mmol之2,2'-偶氮雙(2-脒基丙烷)二鹽酸鹽之單體組成物秤取至離子交換水後,以200 rpm進行攪拌,且於氮環境下,以70℃進行24小時之聚合。於反應結束後,進行冷凍乾燥而獲得於表面上具有銨基,且平均粒徑為220 nm及 CV(Coefficient of Variation,變異係數)值為10%之絕緣性粒子。 In a 1000 mL separable flask equipped with four separable caps, agitating blades, a three-way cock, a cooling tube and a temperature probe, a solid content of 5 wt% will contain 100 mmol of methyl group. Methyl acrylate, 1 mmol of N,N,N-trimethyl-N-2-methylpropenyloxyethylammonium chloride, and 1 mmol of 2,2'-azobis(2-indenyl) The monomer composition of propane) dihydrochloride was weighed to ion-exchanged water, stirred at 200 rpm, and polymerized at 70 ° C for 24 hours under a nitrogen atmosphere. After the reaction is completed, lyophilization is carried out to obtain an ammonium group on the surface, and the average particle diameter is 220 nm and Insulating particles having a CV (Coefficient of Variation) value of 10%.

使絕緣性粒子於超音波照射下分散至離子交換水,從而獲得絕緣性粒子為10重量%之水分散液。 The insulating particles were dispersed in ion-exchanged water under ultrasonic irradiation to obtain an aqueous dispersion in which the insulating particles were 10% by weight.

使實施例1中所獲得之10 g之導電性粒子分散至500 mL之離子交換水中,添加4 g之絕緣性粒子之水分散液,於室溫下攪拌6小時。於藉由3 μm之篩網過濾器進行過濾後,進而藉由甲醇進行清洗、乾燥,從而獲得附著有絕緣性粒子之導電性粒子。 10 g of the conductive particles obtained in Example 1 was dispersed in 500 mL of ion-exchanged water, and 4 g of an aqueous dispersion of insulating particles was added thereto, followed by stirring at room temperature for 6 hours. After filtering by a 3 μm mesh filter, the mixture was washed with methanol and dried to obtain conductive particles to which insulating particles were attached.

藉由掃描式電子顯微鏡(SEM,Scanning Electron Microscope)進行觀察,結果於導電性粒子之表面上,僅形成有1層因絕緣性粒子產生之被覆層。藉由圖像解析,算出絕緣性粒子相對於距導電性粒子之中心2.5 μm之面積之被覆面積(即絕緣性粒子之粒徑之投影面積),結果被覆率為30%。 Observation by a scanning electron microscope (SEM, Scanning Electron Microscope) revealed that only one layer of the coating layer due to the insulating particles was formed on the surface of the conductive particles. The coverage area of the insulating particles with respect to the area of 2.5 μm from the center of the conductive particles (that is, the projected area of the particle diameter of the insulating particles) was calculated by image analysis, and as a result, the coverage ratio was 30%.

(實施例10) (Embodiment 10)

除將粒徑為5.0 μm之二乙烯基苯樹脂粒子(積水化學工業公司製造之「Micropearl SP-205」)變更為以矽土被覆粒徑為5.0 μm之二乙烯基苯樹脂粒子(積水化學工業公司製造之「Micropearl SP-205」)之有機無機混合粒子(粒徑為5.1 μm)外,與實施例1相同地獲得導電性粒子。 In addition to the divinylbenzene resin particles ("Micropearl SP-205" manufactured by Sekisui Chemical Co., Ltd.) having a particle size of 5.0 μm, the divinyl benzene resin particles having a particle size of 5.0 μm are coated with alumina (Shuishui Chemical Industry Co., Ltd.) Conductive particles were obtained in the same manner as in Example 1 except that the organic-inorganic hybrid particles (having a particle diameter of 5.1 μm) of "Micropearl SP-205" manufactured by the company.

(比較例1) (Comparative Example 1)

除將鎳-磷層即第1導電層之厚度變更為4.5 nm外,與實施例1相同地獲得導電性粒子。 Conductive particles were obtained in the same manner as in Example 1 except that the thickness of the nickel-phosphorus layer, that is, the first conductive layer was changed to 4.5 nm.

(比較例2) (Comparative Example 2)

準備粒徑為5.0 μm之二乙烯基苯樹脂粒子(積水化學工業公司製造之「Micropearl SP-205」)。又,準備氧化鋁(Al2O3)粒子漿料(平均粒徑為100 nm)。使用樹脂粒子與金屬粒子漿料,以芯物質被覆樹脂粒子之表面而獲得懸浮液。 Divinylbenzene resin particles ("Micropearl SP-205" manufactured by Sekisui Chemical Co., Ltd.) having a particle diameter of 5.0 μm were prepared. Further, an alumina (Al 2 O 3 ) particle slurry (having an average particle diameter of 100 nm) was prepared. The resin particles and the metal particle slurry were used to coat the surface of the resin particles with a core material to obtain a suspension.

為了形成鎳-磷導電層,準備包含0.25 mol/L之硫酸鎳、0.25 mol/L之次亞磷酸鈉、0.15 mol/L之檸檬酸鈉、及0.01 mol/L之鉬酸鈉之鍍鎳液(pH值為8.0)。 In order to form a nickel-phosphorus conductive layer, a nickel plating solution containing 0.25 mol/L of nickel sulfate, 0.25 mol/L of sodium hypophosphite, 0.15 mol/L of sodium citrate, and 0.01 mol/L of sodium molybdate is prepared. (pH 8.0).

一面以60℃攪拌所獲得之懸浮液,一面將上述鍍鎳液緩緩地滴下至懸浮液而進行非電解鍍鎳,從而形成厚度為100 nm之導電層。此後,藉由對懸浮液進行過濾而取出粒子並進行水洗、乾燥,藉此獲得導電性粒子。所獲得之導電性粒子係芯物質與基材粒子接觸。 While the obtained suspension was stirred at 60 ° C, the nickel plating solution was gradually dropped to the suspension to carry out electroless nickel plating to form a conductive layer having a thickness of 100 nm. Thereafter, the particles were taken out by filtration of the suspension, washed with water, and dried to obtain conductive particles. The obtained conductive particle-based core material is in contact with the substrate particles.

(實施例11) (Example 11) (1)鈀附著步驟 (1) Palladium attachment step

準備實施例1中所獲得之附著有鈀之樹脂粒子。 The palladium-attached resin particles obtained in Example 1 were prepared.

(2)非電解鍍鎳步驟 (2) Electroless nickel plating step

準備包含0.23 mol/L之硫酸鎳、0.92 mol/L之二甲胺硼烷、0.5 mol/L之檸檬酸鈉、及0.01 mol/L之鎢酸鈉之鍍鎳液(pH值為8.5)。 A nickel plating solution (pH 8.5) containing 0.23 mol/L of nickel sulfate, 0.92 mol/L of dimethylamine borane, 0.5 mol/L of sodium citrate, and 0.01 mol/L of sodium tungstate was prepared.

向1000 mL之純水中添加所獲得之附著有鈀之樹脂粒子,藉由超音波分散器進行分散,藉此獲得懸浮液。一面以60℃攪拌所獲得之懸浮液,一面將上述鍍鎳液緩緩地滴 下至懸浮液,從而進行非電解鍍鎳。此後,藉由對懸浮液進行過濾而取出粒子,從而進行水洗、乾燥,藉此以鎳-鎢-硼層即第1導電層(厚度為5.1 nm)被覆樹脂粒子,而獲得形成有第1導電層之粒子。 The obtained palladium-attached resin particles were added to 1000 mL of pure water, and dispersed by an ultrasonic disperser, thereby obtaining a suspension. While stirring the obtained suspension at 60 ° C, the nickel plating solution was slowly dropped on one side. The suspension is passed down to perform electroless nickel plating. Thereafter, the particles were taken out by filtration of the suspension, washed with water, and dried to coat the resin particles with a nickel-tungsten-boron layer, which is a first conductive layer (having a thickness of 5.1 nm), thereby obtaining a first conductive layer. Layer particles.

(3)芯物質附著步驟及非電解鍍鎳步驟 (3) Core substance attachment step and electroless nickel plating step

準備氧化鋁(Al2O3)粒子漿料(平均粒徑為100 nm)。使用形成有第1導電層之粒子與金屬粒子漿料被覆。 A slurry of alumina (Al 2 O 3 ) particles (having an average particle diameter of 100 nm) was prepared. The particles in which the first conductive layer is formed are coated with the metal particle slurry.

準備包含0.23 mol/L之硫酸鎳、0.92 mol/L之二甲胺硼烷、0.5 mol/L之檸檬酸鈉、及0.01 mol/L之鎢酸鈉之鍍鎳液(pH值為8.5)。 A nickel plating solution (pH 8.5) containing 0.23 mol/L of nickel sulfate, 0.92 mol/L of dimethylamine borane, 0.5 mol/L of sodium citrate, and 0.01 mol/L of sodium tungstate was prepared.

一面以60℃攪拌所獲得之懸浮液,一面將上述鍍鎳液緩緩地滴下至懸浮液而進行非電解鍍鎳,從而形成厚度為90 nm之第2導電層。此後,藉由對懸浮液進行過濾而取出粒子,從而進行水洗、乾燥,藉此獲得導電性粒子。所獲得之導電性粒子係於第2導電層之外側之表面具有突起,且於第2導電層之突起之內側配置有芯物質。又,於樹脂粒子與芯物質之間,配置有第1導電層。 While the obtained suspension was stirred at 60 ° C, the nickel plating solution was gradually dropped to the suspension to carry out electroless nickel plating to form a second conductive layer having a thickness of 90 nm. Thereafter, the particles are taken out by filtration of the suspension, washed with water, and dried to obtain conductive particles. The conductive particles obtained have protrusions on the outer surface of the second conductive layer, and a core material is disposed inside the protrusions of the second conductive layer. Further, a first conductive layer is disposed between the resin particles and the core material.

(實施例12) (Embodiment 12)

除將鎳-鎢-硼層即第1導電層之厚度變更為10 nm外,與實施例11相同地獲得導電性粒子。 Conductive particles were obtained in the same manner as in Example 11 except that the thickness of the nickel-tungsten-boron layer, that is, the first conductive layer was changed to 10 nm.

(實施例13) (Example 13)

除將鎳-鎢-硼層即第1導電層之厚度變更為20 nm外,與實施例11相同地獲得導電性粒子。 Conductive particles were obtained in the same manner as in Example 11 except that the thickness of the nickel-tungsten-boron layer, that is, the first conductive layer was changed to 20 nm.

(實施例14) (Example 14)

準備實施例9中所獲得之絕緣性粒子為10重量%之水分散液。使實施例11中所獲得之10 g導電性粒子分散至500 mL之離子交換水,添加4 g之絕緣性粒子之水分散液,於室溫下攪拌6小時。於藉由3 μm之篩網過濾器進行過濾後,進而藉由甲醇進行清洗、乾燥,從而獲得附著有絕緣性粒子之導電性粒子。 The insulating particles obtained in Example 9 were prepared as an aqueous dispersion of 10% by weight. 10 g of the conductive particles obtained in Example 11 was dispersed in 500 mL of ion-exchanged water, and 4 g of an aqueous dispersion of insulating particles was added thereto, followed by stirring at room temperature for 6 hours. After filtering by a 3 μm mesh filter, the mixture was washed with methanol and dried to obtain conductive particles to which insulating particles were attached.

藉由掃描式電子顯微鏡(SEM)進行觀察,結果於導電性粒子之表面上僅形成有1層因絕緣性粒子產生之被覆層。藉由圖像解析,算出絕緣性粒子相對於距導電性粒子之中心2.5 μm之面積之被覆面積(即絕緣性粒子之粒徑之投影面積),結果被覆率為30%。 Observation by a scanning electron microscope (SEM) revealed that only one layer of the coating layer due to the insulating particles was formed on the surface of the conductive particles. The coverage area of the insulating particles with respect to the area of 2.5 μm from the center of the conductive particles (that is, the projected area of the particle diameter of the insulating particles) was calculated by image analysis, and as a result, the coverage ratio was 30%.

(比較例3) (Comparative Example 3)

除將鎳-鎢-硼層即第1導電層之厚度變更為3 nm外,與實施例11相同地獲得導電性粒子。 Conductive particles were obtained in the same manner as in Example 11 except that the thickness of the nickel-tungsten-boron layer, that is, the first conductive layer was changed to 3 nm.

(比較例4) (Comparative Example 4)

準備粒徑為5.0 μm之二乙烯基苯樹脂粒子(積水化學工業公司製造之「Micropearl SP-205」)。又,準備氧化鋁(Al2O3)粒子漿料(平均粒徑為100 nm)。使用樹脂粒子與金屬粒子漿料,以芯物質被覆樹脂粒子之表面,從而獲得懸浮液。 Divinylbenzene resin particles ("Micropearl SP-205" manufactured by Sekisui Chemical Co., Ltd.) having a particle diameter of 5.0 μm were prepared. Further, an alumina (Al 2 O 3 ) particle slurry (having an average particle diameter of 100 nm) was prepared. The resin particles and the metal particle slurry were used to coat the surface of the resin particles with a core material to obtain a suspension.

準備包含0.23 mol/L之硫酸鎳、0.92 mol/L之二甲胺硼烷、0.5 mol/L之檸檬酸鈉、及0.01 mol/L之鎢酸鈉之鍍鎳液(pH值為8.5)。 A nickel plating solution (pH 8.5) containing 0.23 mol/L of nickel sulfate, 0.92 mol/L of dimethylamine borane, 0.5 mol/L of sodium citrate, and 0.01 mol/L of sodium tungstate was prepared.

一面以60℃攪拌所獲得之懸浮液,一面將上述鍍鎳液緩 緩地滴下至懸浮液而進行非電解鍍鎳,從而形成厚度為100 nm之導電層。此後,藉由對懸浮液進行過濾而取出粒子,從而進行水洗、乾燥,藉此獲得導電性粒子。所獲得之導電性粒子係芯物質與基材粒子接觸。 One side of the suspension obtained by stirring at 60 ° C, while the above nickel plating solution is slowed down Electroless nickel plating was slowly dropped to the suspension to form a conductive layer having a thickness of 100 nm. Thereafter, the particles are taken out by filtration of the suspension, washed with water, and dried to obtain conductive particles. The obtained conductive particle-based core material is in contact with the substrate particles.

(實施例15) (Example 15) (1)鈀附著步驟 (1) Palladium attachment step

準備實施例1中所獲得之附著有鈀之樹脂粒子。 The palladium-attached resin particles obtained in Example 1 were prepared.

(2)非電解鍍鎳步驟 (2) Electroless nickel plating step

準備包含0.23 mol/L之硫酸鎳、0.92 mol/L之二甲胺硼烷、0.5 mol/L之檸檬酸鈉、及0.01 mol/L之鎢酸鈉之鍍鎳液(pH值為8.5)。 A nickel plating solution (pH 8.5) containing 0.23 mol/L of nickel sulfate, 0.92 mol/L of dimethylamine borane, 0.5 mol/L of sodium citrate, and 0.01 mol/L of sodium tungstate was prepared.

向1000 mL之純水中,添加所獲得之附著有鈀之樹脂粒子,藉由超音波分散器進行分散,藉此獲得懸浮液。一面以60℃攪拌所獲得之懸浮液,一面將上述鍍鎳液緩緩地滴下至懸浮液,從而進行非電解鍍鎳。此後,藉由對懸浮液進行過濾而取出粒子,從而進行水洗、乾燥,藉此以鎳-鎢-硼層即厚度為10 nm之第1導電層被覆樹脂粒子,而獲得形成有第1導電層之粒子。 The obtained palladium-attached resin particles were added to 1000 mL of pure water, and dispersed by an ultrasonic disperser, thereby obtaining a suspension. While the obtained suspension was stirred at 60 ° C, the nickel plating solution was gradually dropped to the suspension to carry out electroless nickel plating. Thereafter, the particles are taken out by filtration of the suspension, washed with water, and dried to coat the resin particles with a nickel-tungsten-boron layer, that is, a first conductive layer having a thickness of 10 nm, thereby obtaining a first conductive layer. Particles.

(3)芯物質附著步驟及非電解鍍鎳步驟 (3) Core substance attachment step and electroless nickel plating step

準備鈦酸鋇(BaTiO3)粒子漿料(平均粒徑為100 nm)。使用形成有第1導電層之粒子與金屬粒子漿料,以金屬粒子被覆第1導電層之表面而獲得懸浮液。 A slurry of barium titanate (BaTiO 3 ) particles (having an average particle diameter of 100 nm) was prepared. The particles of the first conductive layer and the metal particle slurry were used, and the surface of the first conductive layer was coated with metal particles to obtain a suspension.

準備包含0.23 mol/L之硫酸鎳、0.92 mol/L之二甲胺硼烷、及0.5 mol/L之檸檬酸鈉之鍍鎳液(pH值為7.0)。 A nickel plating solution (pH 7.0) containing 0.23 mol/L of nickel sulfate, 0.92 mol/L of dimethylamine borane, and 0.5 mol/L of sodium citrate was prepared.

一面以60℃攪拌所獲得之懸浮液,一面將上述鍍鎳液緩緩地滴下至懸浮液而進行非電解鍍鎳,從而獲得厚度為90 nm之第2導電層。此後,藉由對懸浮液進行過濾而取出粒子,從而進行水洗、乾燥,藉此獲得導電性粒子。所獲得之導電性粒子係於第2導電層之外側之表面具有突起,且於第2導電層之突起之內側配置有芯物質。又,於樹脂粒子與芯物質之間,配置有第1導電層。 While the obtained suspension was stirred at 60 ° C, the nickel plating solution was gradually dropped to the suspension to carry out electroless nickel plating, thereby obtaining a second conductive layer having a thickness of 90 nm. Thereafter, the particles are taken out by filtration of the suspension, washed with water, and dried to obtain conductive particles. The conductive particles obtained have protrusions on the outer surface of the second conductive layer, and a core material is disposed inside the protrusions of the second conductive layer. Further, a first conductive layer is disposed between the resin particles and the core material.

(實施例16) (Embodiment 16)

除將鎳-鎢-硼層即第1導電層之厚度變更為5.1 nm外,與實施例15相同地獲得導電性粒子。 Conductive particles were obtained in the same manner as in Example 15 except that the thickness of the nickel-tungsten-boron layer, that is, the first conductive layer was changed to 5.1 nm.

(實施例17) (Example 17)

除將鎳-鎢-硼層即第1導電層之厚度變更為20 nm外,與實施例15相同地獲得導電性粒子。 Conductive particles were obtained in the same manner as in Example 15 except that the thickness of the nickel-tungsten-boron layer, that is, the first conductive layer was changed to 20 nm.

(實施例18) (Embodiment 18)

除將鈦酸鋇(BaTiO3)粒子漿料(平均粒徑為100 nm)變更為氧化鋁(Al2O3)粒子漿料(平均粒徑為100 nm)外,與實施例15相同地獲得導電性粒子。 The same procedure as in Example 15 was carried out except that a barium titanate (BaTiO 3 ) particle slurry (having an average particle diameter of 100 nm) was changed to an alumina (Al 2 O 3 ) particle slurry (average particle diameter: 100 nm). Conductive particles.

(實施例19) (Embodiment 19)

除將鈦酸鋇(BaTiO3)粒子漿料(平均粒徑為100 nm)變更為氧化鋁(Al2O3)粒子漿料(平均粒徑為100 nm)外,與實施例16相同地獲得導電性粒子。 The same procedure as in Example 16 was carried out except that a barium titanate (BaTiO 3 ) particle slurry (having an average particle diameter of 100 nm) was changed to an alumina (Al 2 O 3 ) particle slurry (average particle diameter of 100 nm). Conductive particles.

(實施例20) (Embodiment 20)

除將鈦酸鋇(BaTiO3)粒子漿料(平均粒徑為100 nm)變更為氧化鋁(Al2O3)粒子漿料(平均粒徑為100 nm)外,與實施 例17相同地獲得導電性粒子。 The same procedure as in Example 17 was carried out except that a barium titanate (BaTiO 3 ) particle slurry (having an average particle diameter of 100 nm) was changed to an alumina (Al 2 O 3 ) particle slurry (average particle diameter of 100 nm). Conductive particles.

(實施例21) (Example 21)

除向用以形成第2導電層之鍍鎳液追加0.01 mol/L之鎢酸鈉外,與實施例15相同地獲得導電性粒子。 Conductive particles were obtained in the same manner as in Example 15 except that 0.01 mol/L of sodium tungstate was added to the nickel plating solution for forming the second conductive layer.

(實施例22) (Example 22)

準備實施例9中所獲得之絕緣性粒子為10重量%之水分散液。使實施例15中所獲得之10 g之導電性粒子分散至500 mL之離子交換水,添加4 g之絕緣性粒子之水分散液,於室溫下攪拌6小時。於藉由3 μm之篩網過濾器進行過濾後,進而藉由甲醇進行清洗、乾燥,從而獲得附著有絕緣性粒子之導電性粒子。 The insulating particles obtained in Example 9 were prepared as an aqueous dispersion of 10% by weight. 10 g of the conductive particles obtained in Example 15 were dispersed in 500 mL of ion-exchanged water, and 4 g of an aqueous dispersion of insulating particles was added thereto, followed by stirring at room temperature for 6 hours. After filtering by a 3 μm mesh filter, the mixture was washed with methanol and dried to obtain conductive particles to which insulating particles were attached.

藉由掃描式電子顯微鏡(SEM)進行觀察,結果於導電性粒子之表面上,僅形成有1層因絕緣性粒子產生之被覆層。藉由圖像解析,算出絕緣性粒子相對於距導電性粒子之中心2.5 μm之面積之被覆面積(即絕緣性粒子之粒徑之投影面積),結果被覆率為30%。 Observation by a scanning electron microscope (SEM) revealed that only one layer of the coating layer due to the insulating particles was formed on the surface of the conductive particles. The coverage area of the insulating particles with respect to the area of 2.5 μm from the center of the conductive particles (that is, the projected area of the particle diameter of the insulating particles) was calculated by image analysis, and as a result, the coverage ratio was 30%.

(比較例5) (Comparative Example 5)

準備粒徑為5.0 μm之二乙烯基苯樹脂粒子(積水化學工業公司製造之「Micropearl SP-205」)。又,準備鈦酸鋇(BaTiO3)粒子漿料(平均粒徑為100 nm)。使用樹脂粒子與金屬粒子漿料,以芯物質被覆樹脂粒子之表面而獲得懸浮液。 Divinylbenzene resin particles ("Micropearl SP-205" manufactured by Sekisui Chemical Co., Ltd.) having a particle diameter of 5.0 μm were prepared. Further, a barium titanate (BaTiO 3 ) particle slurry (having an average particle diameter of 100 nm) was prepared. The resin particles and the metal particle slurry were used to coat the surface of the resin particles with a core material to obtain a suspension.

準備包含0.23 mol/L之硫酸鎳、0.92 mol/L之二甲胺硼烷、0.5 mol/L之檸檬酸鈉、及0.01 mol/L之鎢酸鈉之鍍鎳 液(pH值為8.5)。 Prepare nickel plating containing 0.23 mol/L nickel sulfate, 0.92 mol/L dimethylamine borane, 0.5 mol/L sodium citrate, and 0.01 mol/L sodium tungstate Liquid (pH 8.5).

一面以60℃攪拌所獲得之懸浮液,一面將上述鍍鎳液緩緩地滴下至懸浮液而進行非電解鍍鎳,從而形成厚度為100 nm之導電層。此後,藉由對懸浮液進行過濾而取出粒子,從而進行水洗、乾燥,藉此獲得導電性粒子。所獲得之導電性粒子係芯物質與基材粒子接觸。 While the obtained suspension was stirred at 60 ° C, the nickel plating solution was gradually dropped to the suspension to carry out electroless nickel plating to form a conductive layer having a thickness of 100 nm. Thereafter, the particles are taken out by filtration of the suspension, washed with water, and dried to obtain conductive particles. The obtained conductive particle-based core material is in contact with the substrate particles.

(比較例6) (Comparative Example 6)

除將鎳-鎢-硼層即第1導電層之厚度變更為1 nm外,與實施例18相同地獲得導電性粒子。 Conductive particles were obtained in the same manner as in Example 18 except that the thickness of the nickel-tungsten-boron layer, that is, the first conductive layer was changed to 1 nm.

(實施例23) (Example 23)

準備實施例9中所獲得之絕緣性粒子為10重量%之水分散液。使實施例18中所獲得之10 g之導電性粒子分散至500 mL之離子交換水,添加4 g之絕緣性粒子之水分散液,於室溫下攪拌6小時。於藉由3 μm之篩網過濾器進行過濾後,進而藉由甲醇進行清洗、乾燥,從而獲得附著有絕緣性粒子之導電性粒子。 The insulating particles obtained in Example 9 were prepared as an aqueous dispersion of 10% by weight. 10 g of the conductive particles obtained in Example 18 were dispersed in 500 mL of ion-exchanged water, and 4 g of an aqueous dispersion of insulating particles was added thereto, followed by stirring at room temperature for 6 hours. After filtering by a 3 μm mesh filter, the mixture was washed with methanol and dried to obtain conductive particles to which insulating particles were attached.

藉由掃描式電子顯微鏡(SEM)進行觀察,結果於導電性粒子之表面上,僅形成有1層因絕緣性粒子產生之被覆層。藉由圖像解析,算出絕緣性粒子相對於距導電性粒子之中心2.5 μm之面積之被覆面積(即絕緣性粒子之粒徑之投影面積),結果被覆率為30%。 Observation by a scanning electron microscope (SEM) revealed that only one layer of the coating layer due to the insulating particles was formed on the surface of the conductive particles. The coverage area of the insulating particles with respect to the area of 2.5 μm from the center of the conductive particles (that is, the projected area of the particle diameter of the insulating particles) was calculated by image analysis, and as a result, the coverage ratio was 30%.

(評估) (assessment) (1)基材粒子之表面與芯物質之表面之間之平均距離 (1) The average distance between the surface of the substrate particles and the surface of the core material

切斷所獲得之導電性粒子而觀察剖面,藉此測定基材粒 子之表面與複數個芯物質之間之距離。基材粒子之表面與芯物質之表面之間之距離係藉由如下方式而測定:拍攝導電性粒子之複數個部位之剖面而獲得圖像,根據所獲得之圖像作成立體圖像,從而使用所獲得之立體圖像。上述剖面之拍攝係使用日本FEI公司製造之裝置名為Helious NanoLab.650之聚光離子束-掃描式電子顯微鏡(FIBSEM)進行。使用聚焦離子束製作導電性粒子之薄膜切片,從而藉由掃描型電子顯微鏡觀察剖面。將該操作重複200次而進行圖像解析,藉此獲得粒子之立體圖像。根據立體圖像,求出基材粒子之表面與芯物質之表面之間之距離。 The obtained conductive particles were cut and the cross section was observed, thereby measuring the substrate particles. The distance between the surface of the child and the plurality of core materials. The distance between the surface of the substrate particle and the surface of the core material is measured by taking a cross section of a plurality of portions of the conductive particles to obtain an image, and using the obtained image as a stereoscopic image, thereby using The stereo image obtained. The above-mentioned cross-section was taken using a concentrating ion beam-scanning electron microscope (FIBSEM) manufactured by FEI Corporation of Japan under the name of Helious NanoLab.650. A thin film section of the conductive particles was produced using a focused ion beam, and the cross section was observed by a scanning electron microscope. This operation was repeated 200 times to perform image analysis, thereby obtaining a stereoscopic image of the particles. From the stereoscopic image, the distance between the surface of the substrate particles and the surface of the core material was determined.

(2)於芯物質之總個數100重量%中,基材粒子之表面與芯物質之表面之間之距離超過5 nm的芯物質之個數之比率(%) (2) The ratio (%) of the number of core materials whose distance between the surface of the substrate particles and the surface of the core material exceeds 5 nm in 100% by weight of the total amount of the core material

與上述(1)之評估項目相同地,測定於芯物質之總個數100重量%中,基材粒子之表面與芯物質之表面之間之距離超過5 nm的芯物質之個數之比率(%),從而以下述基準進行判定。 In the same manner as the evaluation item of the above (1), the ratio of the number of core materials in which the distance between the surface of the substrate particles and the surface of the core material exceeds 5 nm is measured in 100% by weight of the total amount of the core material ( %), and thus the determination is made based on the following criteria.

[基材粒子之表面與芯物質之表面之間之距離超過5 nm的芯物質之個數之比率(%)之判定基準] [Criteria for determining the ratio (%) of the number of core materials whose distance between the surface of the substrate particles and the surface of the core material exceeds 5 nm]

A:上述個數之比率超過80% A: The ratio of the above number exceeds 80%

B:上述個數之比率為80%以下 B: The ratio of the above number is 80% or less

(3)連接電阻 (3) Connection resistance 連接構造體之製作: Production of the connection structure:

混合10重量份之雙酚A型環氧樹脂(三菱化學公司製造之 「Epikote1009」)、40重量份之丙烯酸橡膠(重量平均分子量約為80萬)、200重量份之甲基乙基酮、50重量份之微膠囊型硬化劑(旭化成化學公司製造之「HX3941HP」)、2重量份之矽烷偶合劑(東麗道康寧矽酮公司製造「SH6040」),以含量成為3重量%之方式添加導電性粒子並分散,從而獲得樹脂組成物。 10 parts by weight of bisphenol A type epoxy resin (manufactured by Mitsubishi Chemical Corporation) "Epikote 1009"), 40 parts by weight of acrylic rubber (weight average molecular weight: about 800,000), 200 parts by weight of methyl ethyl ketone, and 50 parts by weight of microcapsule-type hardener ("HX3941HP" manufactured by Asahi Kasei Chemicals Co., Ltd.) 2 parts by weight of a decane coupling agent ("SH6040" manufactured by Toray Dow Corning Co., Ltd.) was added to the conductive particles so as to have a content of 3% by weight, and dispersed to obtain a resin composition.

將所獲得之樹脂組成物塗佈至單面經脫模處理之厚度為50 μm的PET(Polyethylene Terephthalate,聚對苯二甲酸乙二酯)膜,以70℃之熱風乾燥5分鐘,從而製作各向異性導電膜。所獲得之各向異性導電膜之厚度為12 μm。 The obtained resin composition was applied to a PET (Polyethylene Terephthalate) film having a thickness of 50 μm which was subjected to release treatment on one side, and dried at 70 ° C for 5 minutes in hot air to prepare each. Anisotropic conductive film. The thickness of the anisotropic conductive film obtained was 12 μm.

將所獲得之各向異性導電膜切斷成5 mm×5 mm之大小。將所切斷之各向異性導電膜貼附至在一方具有鋁電極(高度為0.2 μm,且L/S=20 μm/20 μm)之玻璃基板(寬度為3 cm,長度為3 cm)之鋁電極側的大致中央,該鋁電極係具有電阻測定用導線。接著,使具有相同之鋁電極之2層軟性印刷基板(寬度為2 cm,長度為1 cm)以電極間重疊之方式位置對準後貼合。以10 N、180℃、及20秒鐘之壓接條件,對該玻璃基板與2層軟性印刷基板之積層體進行熱壓接,從而獲得連接構造體。再者,使用於聚醯亞胺膜上直接形成有鋁電極之2層軟性印刷基板。 The obtained anisotropic conductive film was cut into a size of 5 mm × 5 mm. The cut anisotropic conductive film was attached to a glass substrate (having a width of 3 μm and an L/S=20 μm/20 μm) on one side (width: 3 cm, length: 3 cm) At approximately the center of the aluminum electrode side, the aluminum electrode has a wire for resistance measurement. Next, two flexible printed boards (having a width of 2 cm and a length of 1 cm) having the same aluminum electrode were aligned and bonded so that the electrodes overlap each other. The laminated body of the glass substrate and the two layers of the flexible printed circuit board was thermocompression-bonded under pressure conditions of 10 N, 180 ° C, and 20 seconds to obtain a bonded structure. Further, a two-layer flexible printed circuit board in which an aluminum electrode was directly formed on a polyimide film was used.

連接電阻之測定: Determination of connection resistance:

藉由4端子法測定所獲得之連接構造體之對向之電極間的連接電阻。又,以下述基準判定連接電阻。 The connection resistance between the opposing electrodes of the obtained connection structure was measured by a four-terminal method. Further, the connection resistance was determined based on the following criteria.

[連接電阻之判定基準] [Determination of connection resistance]

○○:連接電阻為2.0 Ω以下 ○○: The connection resistance is 2.0 Ω or less

○:連接電阻超過2.0 Ω且3.0 Ω以下 ○: The connection resistance exceeds 2.0 Ω and is less than 3.0 Ω.

△:連接電阻超過3.0 Ω且5.0 Ω以下 △: The connection resistance exceeds 3.0 Ω and is less than 5.0 Ω.

×:連接電阻超過5.0 Ω ×: The connection resistance exceeds 5.0 Ω

(4)耐衝擊性 (4) Impact resistance

使藉由上述(3)連接電阻之評估而獲得之連接構造體自高度為70 cm之位置落下,從而藉由確認導通而進行耐衝擊性之評估。根據自初始電阻值之電阻值之上升率,以下述基準判定耐衝擊性。 The connection structure obtained by the evaluation of the connection resistance of the above (3) was dropped from a position having a height of 70 cm, and the impact resistance was evaluated by confirming the conduction. The impact resistance was determined based on the rate of increase of the resistance value from the initial resistance value by the following criteria.

[耐衝擊性之判定基準] [Criteria for determination of impact resistance]

○○:自初始電阻值之電阻值之上升率為20%以下 ○○: The rate of increase from the initial resistance value is 20% or less

○:自初始電阻值之電阻值之上升率超過20%且35%以下 ○: The rate of increase of the resistance value from the initial resistance value exceeds 20% and is less than 35%.

△:自初始電阻值之電阻值之上升率超過35%且50%以下 △: The increase rate of the resistance value from the initial resistance value exceeds 35% and 50% or less

×:自初始電阻值之電阻值之上升率超過50% ×: The increase rate of the resistance value from the initial resistance value exceeds 50%

(5)壓痕之狀態 (5) the state of the indentation

使用微分干涉顯微鏡,自藉由上述(3)連接電阻之評估而獲得之連接構造體之玻璃基板側,觀察設置於玻璃基板之電極,從而以下述判定基準評估接觸導電性粒子之電極之壓痕之形成的有無。再者,對於電極之壓痕之形成之有無,以電極面積成為0.02 mm2之方式,藉由微分干涉顯微鏡觀察而算出每0.02 mm2之電極面積之壓痕之個數。藉由微分干涉顯微鏡觀察任意之10部位,從而算出每0.02 mm2之電極面積之壓痕之個數的平均值。 Using a differential interference microscope, the electrode provided on the glass substrate was observed from the side of the glass substrate of the bonded structure obtained by the evaluation of the connection resistance of the above (3), and the indentation of the electrode contacting the conductive particles was evaluated by the following criteria. The presence or absence of formation. Furthermore, for the presence or absence of an indentation of the electrodes is formed to be an electrode area of 0.02 mm 2 embodiment, by a differential interference microscope to calculate the number of indentations per 0.02 mm 2 of area of the electrode. The arbitrary 10 points were observed by a differential interference microscope, and the average value of the number of indentations per 0.02 mm 2 of the electrode area was calculated.

[壓痕之狀態之判定基準] [Criteria for judging the state of indentation]

○:每0.02 mm2之電極面積之壓痕之個數的平均值為20個以上 ○: The average number of indentations per 0.02 mm 2 of electrode area is 20 or more

△:每0.02 mm2之電極面積之壓痕之個數的平均值為5個以上且小於20個 △: The average value of the number of indentations per 0.02 mm 2 of the electrode area is 5 or more and less than 20

×:每0.02 mm2之電極面積之壓痕之個數的平均值小於5個 ×: The average number of indentations per 0.02 mm 2 of electrode area is less than 5

將結果示於下述表1~3。再者,於下述表1~3中,表示第1、第2導電層及芯物質之莫氏硬度。又,於下述表1~3中,「-」係表示未評估。 The results are shown in Tables 1 to 3 below. Further, in the following Tables 1 to 3, the Mohs hardness of the first and second conductive layers and the core material is shown. Further, in the following Tables 1 to 3, "-" indicates that it was not evaluated.

Figure TWI615858BD00001
Figure TWI615858BD00001

Figure TWI615858BD00002
Figure TWI615858BD00002

Figure TWI615858BD00003
Figure TWI615858BD00003

1‧‧‧導電性粒子 1‧‧‧Electrical particles

2‧‧‧基材粒子 2‧‧‧Substrate particles

3‧‧‧導電層 3‧‧‧ Conductive layer

3a‧‧‧突起 3a‧‧‧ Protrusion

3b‧‧‧導電層部分 3b‧‧‧ Conductive layer

4‧‧‧芯物質 4‧‧‧ core material

5‧‧‧絕緣物質 5‧‧‧Insulating substances

11‧‧‧導電性粒子 11‧‧‧Electrical particles

12‧‧‧導電層 12‧‧‧ Conductive layer

12a‧‧‧突起 12a‧‧‧ Protrusion

12b‧‧‧導電層部分 12b‧‧‧ Conductive layer

16‧‧‧第1導電層 16‧‧‧1st conductive layer

17‧‧‧第2導電層 17‧‧‧2nd conductive layer

17a‧‧‧突起 17a‧‧‧ Protrusion

21‧‧‧導電性粒子 21‧‧‧Electrical particles

22‧‧‧導電層 22‧‧‧ Conductive layer

22a‧‧‧突起 22a‧‧‧ Protrusion

22b‧‧‧導電層部分 22b‧‧‧ Conductive layer

26‧‧‧第1導電層 26‧‧‧1st conductive layer

27‧‧‧第2導電層 27‧‧‧2nd conductive layer

27a‧‧‧突起 27a‧‧‧Protrusion

28‧‧‧第3導電層 28‧‧‧3rd conductive layer

28a‧‧‧突起 28a‧‧‧Protrusion

51‧‧‧連接構造體 51‧‧‧Connection structure

52‧‧‧第1連接對象構件 52‧‧‧1st connection object component

52a‧‧‧上表面 52a‧‧‧Upper surface

52b‧‧‧電極 52b‧‧‧electrode

53‧‧‧第2連接對象構件 53‧‧‧2nd connection object component

53a‧‧‧下表面 53a‧‧‧ lower surface

53b‧‧‧電極 53b‧‧‧electrode

54‧‧‧連接部 54‧‧‧Connecting Department

圖1係表示本發明之第1實施形態之導電性粒子之剖面圖。 Fig. 1 is a cross-sectional view showing conductive particles according to a first embodiment of the present invention.

圖2係表示本發明之第2實施形態之導電性粒子之剖面圖。 Fig. 2 is a cross-sectional view showing conductive particles according to a second embodiment of the present invention.

圖3係表示本發明之第3實施形態之導電性粒子之剖面圖。 Fig. 3 is a cross-sectional view showing conductive particles according to a third embodiment of the present invention.

圖4係模式性地表示使用有本發明之第1實施形態之導電性粒子之連接構造體的前視剖面圖。 Fig. 4 is a front cross-sectional view schematically showing a connection structure using conductive particles according to the first embodiment of the present invention.

1‧‧‧導電性粒子 1‧‧‧Electrical particles

2‧‧‧基材粒子 2‧‧‧Substrate particles

3‧‧‧導電層 3‧‧‧ Conductive layer

3a‧‧‧突起 3a‧‧‧ Protrusion

3b‧‧‧導電層部分 3b‧‧‧ Conductive layer

4‧‧‧芯物質 4‧‧‧ core material

5‧‧‧絕緣物質 5‧‧‧Insulating substances

Claims (17)

一種導電性粒子,其包括:基材粒子;導電層,其被覆上述基材粒子;及複數個芯物質,其埋設於上述導電層內;且上述導電層於外側之表面包含複數個突起,於上述導電層之上述突起之內側配置有上述芯物質,於上述基材粒子與上述芯物質之間配置有上述導電層,上述基材粒子之表面與上述芯物質之表面隔開距離,上述基材粒子之表面與上述芯物質之表面之間之平均距離超過5nm。 An electroconductive particle comprising: a substrate particle; a conductive layer covering the substrate particle; and a plurality of core materials embedded in the conductive layer; wherein the conductive layer includes a plurality of protrusions on the outer surface The core material is disposed inside the protrusion of the conductive layer, and the conductive layer is disposed between the substrate particle and the core material, and a surface of the substrate particle is spaced apart from a surface of the core material, and the substrate The average distance between the surface of the particles and the surface of the above core material exceeds 5 nm. 如請求項1之導電性粒子,其中上述基材粒子之表面與上述芯物質之表面之間之平均距離超過5nm且800nm以下。 The conductive particle of claim 1, wherein an average distance between a surface of the substrate particle and a surface of the core material exceeds 5 nm and 800 nm or less. 如請求項1之導電性粒子,其中於上述芯物質之總個數100%中,上述基材粒子之表面與上述芯物質之表面之間之距離超過5nm的芯物質之個數之比率超過80%且100%以下。 The conductive particle of claim 1, wherein a ratio of the number of core materials having a distance between the surface of the substrate particle and the surface of the core material exceeding 5 nm exceeds 80 in a total number of 100% of the core material % and less than 100%. 如請求項1之導電性粒子,其中上述基材粒子之表面與上述芯物質之表面之間之平均距離超過5nm且800nm以下,於上述芯物質之總個數100%中,上述基材粒子之表面與上述芯物質之表面之間之距離超過5nm的芯物質之個數之比率超過80%且100%以下。 The conductive particle of claim 1, wherein an average distance between a surface of the substrate particle and a surface of the core material exceeds 5 nm and 800 nm or less, and the substrate particle is in a total of 100% of the core material. The ratio of the number of core materials whose distance between the surface and the surface of the above-mentioned core material exceeds 5 nm exceeds 80% and 100% or less. 如請求項1之導電性粒子,其中上述導電層具有配置於上述基材粒子與上述芯物質之間之導電層部分,上述芯物質之莫氏硬度與配置於上述基材粒子與上述芯物質之間之上述導電層部分之莫氏硬度相同、或上述芯物質之莫氏硬度大於配置於上述基材粒子與上述芯物質之間之上述導電層部分之莫氏硬度。 The conductive particle of claim 1, wherein the conductive layer has a conductive layer portion disposed between the substrate particle and the core material, and a Mohs hardness of the core material is disposed between the substrate particle and the core material The Mohs hardness of the conductive layer portion is the same, or the Mohs hardness of the core material is larger than the Mohs hardness of the conductive layer portion disposed between the substrate particles and the core material. 如請求項2之導電性粒子,其中上述導電層具有配置於上述基材粒子與上述芯物質之間之導電層部分,上述芯物質之莫氏硬度與配置於上述基材粒子與上述芯物質之間之上述導電層部分之莫氏硬度相同、或上述芯物質之莫氏硬度大於配置於上述基材粒子與上述芯物質之間之上述導電層部分之莫氏硬度。 The conductive particle of claim 2, wherein the conductive layer has a conductive layer portion disposed between the substrate particle and the core material, and a Mohs hardness of the core material is disposed between the substrate particle and the core material The Mohs hardness of the conductive layer portion is the same, or the Mohs hardness of the core material is larger than the Mohs hardness of the conductive layer portion disposed between the substrate particles and the core material. 如請求項3之導電性粒子,其中上述導電層具有配置於上述基材粒子與上述芯物質之間之導電層部分,上述芯物質之莫氏硬度與配置於上述基材粒子與上述芯物質之間之上述導電層部分之莫氏硬度相同、或上述芯物質之莫氏硬度大於配置於上述基材粒子與上述芯物質之間之上述導電層部分之莫氏硬度。 The conductive particle of claim 3, wherein the conductive layer has a conductive layer portion disposed between the substrate particle and the core material, and a Mohs hardness of the core material is disposed between the substrate particle and the core material The Mohs hardness of the conductive layer portion is the same, or the Mohs hardness of the core material is larger than the Mohs hardness of the conductive layer portion disposed between the substrate particles and the core material. 如請求項4之導電性粒子,其中上述導電層具有配置於上述基材粒子與上述芯物質之間之導電層部分,上述芯物質之莫氏硬度與配置於上述基材粒子與上述芯物質之間之上述導電層部分之莫氏硬度相同、或上述芯物質之莫氏硬度大於配置於上述基材粒子與上述芯物質之間之上述導電層部分之莫氏硬度。 The conductive particle of claim 4, wherein the conductive layer has a conductive layer portion disposed between the substrate particle and the core material, and a Mohs hardness of the core material is disposed between the substrate particle and the core material The Mohs hardness of the conductive layer portion is the same, or the Mohs hardness of the core material is larger than the Mohs hardness of the conductive layer portion disposed between the substrate particles and the core material. 如請求項5至8中任一項之導電性粒子,其中上述導電層具有配置於上述基材粒子與上述芯物質之間之導電層部分,上述芯物質之莫氏硬度大於配置於上述基材粒子與上述芯物質之間之上述導電層部分之莫氏硬度。 The conductive particle according to any one of claims 5 to 8, wherein the conductive layer has a conductive layer portion disposed between the substrate particle and the core material, and the core material has a Mohs hardness greater than that disposed on the substrate The Mohs hardness of the portion of the above-mentioned conductive layer between the particles and the above-mentioned core material. 如請求項1至8中任一項之導電性粒子,其中上述芯物質中包含最多之金屬元素與上述導電層中包含最多之金屬元素相同。 The electroconductive particle according to any one of claims 1 to 8, wherein the metal element containing the most of the above-mentioned core material is the same as the metal element containing the most of the above-mentioned conductive layer. 如請求項1至8中任一項之導電性粒子,其中上述導電層包括被覆上述基材粒子之第1導電層、及被覆上述第1導電層與上述芯物質之第2導電層,上述芯物質係配置於上述第1導電層之表面上,且埋設於上述第2導電層內,上述第2導電層於外側之表面具有複數個突起,於上述第2導電層之上述突起之內側配置有上述芯物質,於上述基材粒子與上述芯物質之間,配置有上述第1導電層。 The conductive particles according to any one of claims 1 to 8, wherein the conductive layer includes a first conductive layer covering the substrate particles, and a second conductive layer covering the first conductive layer and the core material, the core The substance is disposed on the surface of the first conductive layer and embedded in the second conductive layer. The second conductive layer has a plurality of protrusions on the outer surface, and is disposed inside the protrusion of the second conductive layer. In the core material, the first conductive layer is disposed between the substrate particles and the core material. 如請求項11之導電性粒子,其中上述芯物質中包含最多之金屬元素與上述第2導電層中包含最多之金屬元素相同。 The conductive particle of claim 11, wherein the metal element containing the most of the core material is the same as the metal element containing the most of the second conductive layer. 如請求項1至8中任一項之導電性粒子,其中上述導電層為單層之導電層。 The electroconductive particle according to any one of claims 1 to 8, wherein the electroconductive layer is a single layer of a conductive layer. 如請求項1至8中任一項之導電性粒子,其中上述芯物質為金屬粒子。 The electroconductive particle according to any one of claims 1 to 8, wherein the core material is a metal particle. 如請求項1至8中任一項之導電性粒子,其更包括附著於上述導電層之表面之絕緣物質。 The electroconductive particle according to any one of claims 1 to 8, which further comprises an insulating substance attached to a surface of the above-mentioned conductive layer. 一種導電材料,其包含如請求項1至15中任一項之導電性粒子、及黏合劑樹脂。 A conductive material comprising the conductive particles according to any one of claims 1 to 15, and a binder resin. 一種連接構造體,其包括:第1連接對象構件;第2連接對象構件;及連接部,其將上述第1、第2連接對象構件連接;且上述連接部係由如請求項1至15中任一項之導電性粒子而形成、或由包含上述導電性粒子與黏合劑樹脂之導電材料而形成。 A connection structure comprising: a first connection target member; a second connection target member; and a connection portion that connects the first and second connection target members; and the connection portion is as claimed in claims 1 to 15 Any one of the conductive particles is formed or formed of a conductive material containing the conductive particles and the binder resin.
TW101149093A 2011-12-21 2012-12-21 Conductive particles, conductive materials, and connection structures TWI615858B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011280084 2011-12-21
JP2011280083 2011-12-21
JP2011280082 2011-12-21

Publications (2)

Publication Number Publication Date
TW201333980A TW201333980A (en) 2013-08-16
TWI615858B true TWI615858B (en) 2018-02-21

Family

ID=48668520

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101149093A TWI615858B (en) 2011-12-21 2012-12-21 Conductive particles, conductive materials, and connection structures

Country Status (5)

Country Link
JP (2) JP6049461B2 (en)
KR (1) KR101942602B1 (en)
CN (2) CN103748636A (en)
TW (1) TWI615858B (en)
WO (1) WO2013094636A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6470518B2 (en) * 2013-07-16 2019-02-13 積水化学工業株式会社 Conductive particles, conductive materials, and connection structures
JP6355474B2 (en) * 2013-08-12 2018-07-11 積水化学工業株式会社 Conductive particles, conductive materials, and connection structures
JP6352103B2 (en) * 2013-08-12 2018-07-04 積水化学工業株式会社 Conductive particles, conductive materials, and connection structures
JP6453032B2 (en) * 2013-10-21 2019-01-16 積水化学工業株式会社 Conductive particles, conductive materials, and connection structures
JP6445833B2 (en) * 2013-10-21 2018-12-26 積水化学工業株式会社 Conductive particles, conductive materials, and connection structures
JP6345075B2 (en) * 2013-10-23 2018-06-20 積水化学工業株式会社 Conductive particles, conductive materials, and connection structures
JP6739894B2 (en) * 2013-11-18 2020-08-12 積水化学工業株式会社 Conductive particles, conductive material and connection structure
JP2015195178A (en) * 2014-03-26 2015-11-05 デクセリアルズ株式会社 Conductive particle, conductive adhesive, method for producing connection body, method for connecting electronic component, and connection body
JP6340876B2 (en) * 2014-03-31 2018-06-13 日立化成株式会社 Conductive particles
JP6684052B2 (en) * 2014-06-11 2020-04-22 積水化学工業株式会社 Conductive particles, method for producing conductive particles, conductive material and connection structure
JP6379761B2 (en) * 2014-07-09 2018-08-29 日立化成株式会社 Conductive particle, insulating coated conductive particle, anisotropic conductive adhesive, connection structure, and method for producing conductive particle
JP6507551B2 (en) * 2014-10-03 2019-05-08 日立化成株式会社 Conductive particles
WO2016063941A1 (en) * 2014-10-22 2016-04-28 積水化学工業株式会社 Conductive particles, conductive material and connection structure
TWI740807B (en) * 2014-10-29 2021-10-01 日商迪睿合股份有限公司 Conductive material, connection structure, and manufacturing method of connection structure
JP2016089153A (en) * 2014-10-29 2016-05-23 デクセリアルズ株式会社 Conductive material
JP6386163B2 (en) * 2016-02-08 2018-09-05 積水化学工業株式会社 Conductive particles, conductive materials, and connection structures
CN108701508B (en) * 2016-02-10 2020-03-24 日立化成株式会社 Conductive particle, insulation-coated conductive particle, anisotropic conductive adhesive, connection structure, and method for producing conductive particle
CN114951647A (en) * 2022-05-31 2022-08-30 安徽安坤新材科技有限公司 Preparation method of copper-aluminum composite material

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102089832A (en) * 2008-07-24 2011-06-08 索尼化学&信息部件株式会社 Conductive particle, anisotropic conductive film, joined body, and connecting method
JP2011204531A (en) * 2010-03-26 2011-10-13 Sekisui Chem Co Ltd Conductive particle, manufacturing method of conductive particle, anisotropic conductive material, and connection structure

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3696429B2 (en) 1999-02-22 2005-09-21 日本化学工業株式会社 Conductive electroless plating powder, method for producing the same, and conductive material comprising the plating powder
CN100437838C (en) * 2003-07-07 2008-11-26 积水化学工业株式会社 Coated conductive particle, anisotropic conductive material, and conductive connection structure
CN1906705B (en) * 2004-01-30 2010-04-21 积水化学工业株式会社 Conductive fine particle and anisotropic conductive material
JP4563110B2 (en) * 2004-08-20 2010-10-13 積水化学工業株式会社 Method for producing conductive fine particles
JP4860163B2 (en) 2005-02-15 2012-01-25 積水化学工業株式会社 Method for producing conductive fine particles
JP2007207665A (en) * 2006-02-03 2007-08-16 Sekisui Chem Co Ltd Manufacturing method of conductive particle, conductive particle and anisotropic conductive material
CN101529574A (en) * 2006-10-31 2009-09-09 日立化成工业株式会社 Circuit connection structure
JP2009032397A (en) * 2007-07-24 2009-02-12 Sekisui Chem Co Ltd Conductive fine particle
JP2011100605A (en) * 2009-11-05 2011-05-19 Hitachi Chem Co Ltd Circuit connecting material and connection structure of circuit member using the same
JP5589361B2 (en) 2009-11-16 2014-09-17 日立化成株式会社 Conductive particles and method for producing the same
KR101162890B1 (en) * 2010-03-17 2012-07-05 세키스이가가쿠 고교가부시키가이샤 Conductive particle, conductive particle manufacturing method, anisotropic conductive material, and connection structure
JP5940760B2 (en) * 2010-05-19 2016-06-29 積水化学工業株式会社 Conductive particles, anisotropic conductive materials, and connection structures
JP5476210B2 (en) * 2010-05-19 2014-04-23 積水化学工業株式会社 Conductive particles, anisotropic conductive materials, and connection structures

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102089832A (en) * 2008-07-24 2011-06-08 索尼化学&信息部件株式会社 Conductive particle, anisotropic conductive film, joined body, and connecting method
JP2011204531A (en) * 2010-03-26 2011-10-13 Sekisui Chem Co Ltd Conductive particle, manufacturing method of conductive particle, anisotropic conductive material, and connection structure

Also Published As

Publication number Publication date
KR101942602B1 (en) 2019-01-25
KR20140106384A (en) 2014-09-03
CN103748636A (en) 2014-04-23
CN108806824A (en) 2018-11-13
JP6247371B2 (en) 2017-12-13
TW201333980A (en) 2013-08-16
WO2013094636A1 (en) 2013-06-27
JPWO2013094636A1 (en) 2015-04-27
JP2017084794A (en) 2017-05-18
JP6049461B2 (en) 2016-12-21
CN108806824B (en) 2023-07-25

Similar Documents

Publication Publication Date Title
TWI615858B (en) Conductive particles, conductive materials, and connection structures
TWI601158B (en) Conductive particles, a conductive material, and a connecting structure
TWI607458B (en) Conductive particle with insulating particle, conductive material and connecting structure
TWI556260B (en) Conductive particles, anisotropic conductive materials and connecting structures
JP6034177B2 (en) Conductive particles, conductive materials, and connection structures
TWI820157B (en) Conductive particles, conductive materials and connection structures
JP6276351B2 (en) Conductive particles, conductive materials, and connection structures
TWI604469B (en) Conductive particles, conductive materials, and connection structures
JP6431411B2 (en) Conductive particles with insulating particles, conductive material, and connection structure
JP6478308B2 (en) Conductive particles, conductive materials, and connection structures
JP6577723B2 (en) Conductive particles with insulating particles, conductive material, and connection structure
JP6200318B2 (en) Conductive particles, conductive materials, and connection structures