TWI679762B - Display device and manufacturing method thereof - Google Patents

Abstract

A display device includes an array substrate, a light-emitting diode die, a patterned insulating layer, a first electrode, a second electrode, and an adhesive layer. The light emitting diode die is disposed on the array substrate and is electrically connected to the array substrate. The light-emitting diode die includes a support layer, a first conductive layer, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a second conductive layer. The area of the first semiconductor layer is smaller than the area of the support layer and is within the area range of the support layer. The patterned insulating layer is disposed on the light-emitting diode die. The patterned insulating layer has a first opening and a second opening. The first electrode is electrically connected to the first conductive layer through the first opening. The second electrode is electrically connected to the second conductive layer through the second opening. The adhesive layer is located between the array substrate and the support layer of the light-emitting diode grains.

Description

Display device and manufacturing method thereof

The present invention relates to a display device and a manufacturing method thereof, and more particularly, to a display device having light emitting diode crystal grains and a manufacturing method thereof.

Light emitting diodes (LEDs) have advantages such as long life, small size, high shock resistance, low heat generation, and low power consumption, so they have been widely used as indicators or light sources in homes and various devices. In recent years, light-emitting diodes have developed toward multi-color and high brightness, so their application fields have expanded to large outdoor signages, traffic lights, and related fields. In the future, light emitting diodes may even become the main lighting source with both power saving and environmental protection functions.

Generally, a manufacturing method of a display device with light-emitting diode crystal grains is to first form a patterned mold layer (such as a patterned semiconductor layer, a patterned conductive layer, or a patterned insulating layer) on an epitaxial substrate, and form a plurality of separated layers After the light-emitting diode grains are turned, the epitaxial substrate is turned over to another substrate, and the light-emitting diode grains are separated from the epitaxial substrate to transfer the light-emitting diode grains to another. On the substrate. However, during the aforementioned process of separating these light-emitting diode grains from the epitaxial substrate, the light-emitting diode grains may be shifted due to the release of internal stress, which further affects light emission. Accuracy of diode placement. In addition, the patterned mold layer has been formed on the epitaxial substrate before the aforementioned transfer process. Therefore, in a single light-emitting diode die, the internal stress release of the mold layer may also cause the relative positions of the mold layer patterns (such as alignment marks and the openings formed by the pattern) to be biased. shift. The aforementioned offset phenomenon may cause a reduction in yield. Therefore, how to further improve the yield of the display device has become an issue to be solved urgently.

The invention provides a display device with light-emitting diode crystal grains and a manufacturing method thereof. The manufacturing process is relatively simple and has a good yield.

The invention provides a method for manufacturing a display device, which includes the following steps. A substrate is provided, wherein a second semiconductor material layer, a luminescent material layer, a first semiconductor material layer, a first conductive material layer, and a support material layer are stacked on a surface of the substrate. The supporting material layer on the substrate is connected to the carrier board by a bonding material layer. The substrate is removed to expose the second semiconductor material layer on the carrier. A second conductive material layer is formed on the second semiconductor material layer of the carrier. Forming a plurality of trenches penetrating the second conductive material layer, the second semiconductor material layer, the light emitting material layer, the first semiconductor material layer, the first conductive material layer, and the supporting material layer to form a plurality of light emitting diodes separated from each other Grain. Patterning the bonding material layer to form a patterning bonding layer. The patterned bonding layer has a plurality of bonding layer openings, and the bonding layer openings correspond to the light emitting diode die configuration and expose a part of the carrier board. An insulating material layer is formed on the carrier board to cover the light-emitting diode die, the patterned adhesive layer, and the carrier board exposed by the opening of the adhesive layer. The insulating material layer is patterned to form a plurality of patterned insulating layers and a plurality of connection structures, wherein the connection structure is connected between the light emitting diode die and the carrier board. The patterning adhesive layer is removed, so that the light-emitting diode die is connected to the carrier board through the connection structure, and there is a gap between the light-emitting diode die and the carrier board.

The invention provides a display device, which comprises an array substrate, at least one light-emitting diode die, a patterned insulating layer, a first electrode, a second electrode, and an adhesive layer. The light emitting diode die is disposed on the array substrate and is electrically connected to the array substrate. The light emitting diode die includes a support layer, a first conductive layer, a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a second conductive layer sequentially stacked from the array substrate. In the vertical projection direction of the array substrate, the vertical projection area of the first semiconductor layer is smaller than the vertical projection area of the support layer and is within the range of the vertical projection area of the support layer. The patterned insulating layer is disposed on the light-emitting diode die, and the patterned insulating layer has at least a first opening and at least a second opening. The first electrode is electrically connected to the first conductive layer through the first opening. The second electrode is electrically connected to the second conductive layer through the second opening. The adhesive layer is located between the array substrate and the support layer of the light-emitting diode grains.

Based on the above, in the present invention, a second semiconductor material layer, a light emitting material layer, a first semiconductor material layer, a first conductive material layer, and a support material layer for forming a light emitting diode crystal grain are provided on a substrate, and The aforementioned mold layer is transferred to a carrier board. Then, after the second conductive material layer for constituting the light-emitting diode crystal grains is disposed on the carrier board, the second conductive material layer, the second semiconductor material layer, the light-emitting material layer, the first semiconductor material layer, the first A conductive material layer and a supporting material layer are patterned to form a plurality of light-emitting diode crystal grains separated from each other, and the light-emitting diode crystal grains on the carrier board are connected to the carrier board through a connection structure. Then, the light-emitting diode crystals are transferred to the array substrate to constitute a display device. Therefore, the bad image caused by the shift of the light emitting diode crystal grains during the manufacturing process can be reduced, and the yield of the display device can be improved.

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

1A to 1L are schematic partial cross-sectional views illustrating a manufacturing process of a display device according to a first embodiment of the present invention. FIG. 1M is a schematic partial top view of a manufacturing process of a display device according to a first embodiment of the present invention. FIG. 1N is a schematic partial top view of a manufacturing process of a display device according to a first embodiment of the present invention. FIG. 10 is a schematic partial top view of a manufacturing process of a display device according to a first embodiment of the present invention. Specifically, FIGS. 1E to 1I may be cross-sectional schematic diagrams corresponding to the manufacturing process of the AA ′ section line in FIG. 1M, and FIGS. 1J and 1K may be manufacturing processes corresponding to the B-B ′ section line in FIG. 1N. 1L may be a cross-sectional schematic view taken along the line CC-C ′ in FIG. 10, and for the sake of brevity and clarity, a part of the mold layer is omitted in FIGS. 1M to 10.

1A, a substrate 10 is provided. A surface 10a of the substrate 10 has a second semiconductor material layer 160, a light-emitting material layer 150, a first semiconductor material layer 140, a first conductive material layer 130, and a supporting material layer sequentially stacked. 120.

In this embodiment, the substrate 10 may be a gallium arsenide (GaAs) substrate, a gallium phosphide (GaP) substrate, an indium phosphide (InP) substrate, a sapphire (Sapphire) substrate, a silicon carbide (SiC) substrate, or gallium nitride. A (GaN) substrate is adapted to plate a plurality of semiconductor material layers, a plurality of conductive material layers, and / or a plurality of insulating material layers on a surface 10 a thereof.

In this embodiment, the second semiconductor material layer 160 is an N-type semiconductor layer, and the first semiconductor material layer 140 is a P-type semiconductor layer, but the present invention is not limited thereto. In other embodiments, the second semiconductor material layer 160 may be a P-type semiconductor layer, and the first semiconductor material layer 140 is an N-type semiconductor layer. The material of the N-type semiconductor layer is, for example, N-type gallium nitride (n-GaN) doped with a group IVA element (such as silicon), and the material of the P-type semiconductor layer is, for example, a group IIA element (such as : Magnesium) doped P-type gallium nitride (p-GaN). The luminescent material layer 150 has, for example, a multiple quantum well (Multiple Quantum Well; MQW) structure. The multiple quantum well structure includes a plurality of quantum well layers (Well) and a plurality of quantum barrier layers (Barrier) alternately arranged in a repeating manner. Further, the material of the light-emitting material layer 150 is, for example, alternately stacked multilayer indium gallium nitride and multilayer gallium nitride (InGaN / GaN). By designing the ratio of indium or gallium in the light-emitting material layer 150, the light-emitting material The layer 150 emits a specific color. The second semiconductor material layer 160, the light emitting material layer 150, and the first semiconductor material layer 140 can be formed by, for example, a metal-organic chemical vapor deposition (MOCVD) method. It is worth noting that the materials or formation methods of the above-mentioned second semiconductor material layer 160, luminescent material layer 150, first semiconductor material layer 140, or first conductive material layer 130 are merely examples, and the present invention is not limited thereto. .

In this embodiment, the first conductive material layer 130 has light permeability. For example, the first conductive material layer 130 may be transparent metal oxide formed by physical vapor deposition (PVD), thermal evaporation, or other suitable methods. Physical layer.

In this embodiment, the supporting material layer 120 is an insulating material, but the present invention is not limited thereto. The insulating material includes an oxide of silicon, and can be formed, for example, by a chemical vapor deposition method (CVD), a thermal oxidation method, or other suitable methods.

In this embodiment, the supporting material layer 120 may include an insulated distributed Bragg reflector (DBR). The materials of the insulated distributed Bragg reflector are, for example, silicon dioxide (SiO ₂ ) and titanium dioxide (TiO ₂ ) Or a stack of silicon dioxide and tantalum pentoxide (Ta ₂ O ₅ ), but the present invention is not limited thereto. In other embodiments, other materials having a reflective function may be used instead of the Bragg reflective structure.

In this embodiment, the second semiconductor material layer 160, the light emitting material layer 150, the first semiconductor material layer 140, the first conductive material layer 130, and the support material layer 120 are covered on the surface 10a of the substrate 10. That is, in the process of manufacturing the second semiconductor material layer 160, the light emitting material layer 150, the first semiconductor material layer 140, the first conductive material layer 130, and the support material layer 120, the surface 10a of the substrate 10 can be completely covered. Without having a patterning step. In this way, in the aforementioned mold layer manufacturing process, at least the necessary alignment and yellow light lithography etching processes in the patterning step can be omitted, so the manufacturing process of the display device 100 is simpler and the production capacity of the display device 100 can be increased ( throughput).

It is worth noting that, in the present invention, comprehensive coverage can be a method of depositing or plating a substrate and / or a previously formed film by means of deposition or plating without a patterning step. On the floor. Of course, in a general semiconductor process, the film layer formed later may further partially cover the edge of the substrate and / or the film layer formed previously, or the existing components of the machine due to deposition or plating ( For example, a shadow frame used to reduce side plating or fixed parts used to fix a substrate may cause a part of the uncovered area. The above-mentioned conditions can be included in the present invention. Definition.

Referring to FIG. 1B, the supporting material layer 120 on the substrate 10 and the carrier plate 30 are connected by the material layer 20. For example, a wafer bonding process may be used to connect the support material layer 120 on the substrate 10 and the surface 30 a of the carrier plate 30 to each other by bonding the material layer 20.

The material of the carrier plate 30 may be glass, quartz, organic polymer, silicon wafer, or other suitable materials, but the present invention is not limited thereto. In this embodiment, the area of the surface 30a of the carrier plate 30 may be greater than or equal to the area of the surface 10a of the substrate 10, so that in a subsequent process, the supporting material layer 120, the first conductive material layer 130, and the first semiconductor The material layer 140, the luminescent material layer 150, and the second semiconductor material layer 160 are disposed on the surface 30 a of the carrier plate 30 and are supported by the carrier plate 30. In addition, the area of the bonding material layer 20 may be greater than or equal to the area of the supporting material layer 120 so that the supporting material layer 120 can be bonded to the carrier plate 30 by bonding the material layer 20.

In this embodiment, the material of the material layer 20 may be different from that of the carrier plate 30, the supporting material layer 120, the first conductive material layer 130, the first semiconductor material layer 140, the light emitting material layer 150, and the second semiconductor material layer 160. Material. For example, in this embodiment, the material of the material layer 20 may be a polymer (such as benzocyclobutene (BCB)), a metal layer, or a combination of the foregoing materials. In the subsequent manufacturing process, The bonding material layer 20 is removed by an etching gas (such as a mixed gas of oxygen and a fluoride gas). In other words, the etching rate of an etchant to the bonding material layer 20 is greater than that of the aforementioned etchant to the carrier plate 30, the supporting material layer 120, the first conductive material layer 130, the first semiconductor material layer 140, the light emitting material layer 150, and The etching rate of the second semiconductor material layer 160 can be used to remove the bonding material layer 20 by using the aforementioned etchant in a subsequent process.

Referring to FIG. 1C, after the supporting material layer 120 on the substrate 10 and the carrier plate 30 are bonded to the material layer 20, the substrate 10 is removed to expose the second semiconductor material layer 160 on the carrier plate 30. For example, after the structure shown in FIG. 1B is turned upside down, for example, the second semiconductor material layer 160 may be lifted by laser lift-off (LLO) or other suitable methods. Separated from the surface 10 a of the substrate 10. In this way, the surface 30a of the carrier board 30 has the material layer 20, the supporting material layer 120, the first conductive material layer 130, the first semiconductor material layer 140, the light emitting material layer 150, and the second semiconductor material layer 160 stacked in this order. .

Referring to FIG. 1D, after removing the substrate 10 (shown in FIG. 1C), a second conductive material layer 170 is formed on the surface 30 a of the carrier plate 30. In this embodiment, the second conductive material layer 170 has light permeability. For example, the second conductive material layer 170 may be a transparent metal oxide layer formed by a physical vapor deposition method, thermal evaporation, or other suitable methods.

In this embodiment, the second conductive material layer 170 may cover the second semiconductor material layer 160 located on the carrier board 30. That is, during the manufacturing process of the second conductive material layer 170, the second semiconductor material layer 160 located on the carrier board 30 is completely covered without a patterning step. In this way, in the manufacturing process of the second conductive material layer 170, at least the necessary alignment and yellow lithography etching processes in the patterning step can be omitted, so the manufacturing process of the display device 100 is simpler and the display device 100 can be improved. Production.

Referring to FIG. 1D and FIG. 1E at the same time, after forming the second conductive material layer 170, a plurality of through-the second conductive material layer 170, the second semiconductor material layer 160, and the light-emitting material can be formed by an iso-etching process. The layer 150, the first semiconductor material layer 140, the first conductive material layer 130, and the trenches 40 supporting the material layer 120 form a plurality of light-emitting diode crystal grains 110 separated from each other. In addition, a mesa etching process can be used to form a mesa on the second semiconductor material layer 160, the light emitting material layer 150, and / or the first semiconductor material layer 140 to enhance the light emitting diode grains. 110 light extraction efficiency. In this way, after the above process, the second conductive material layer 170, the second semiconductor material layer 160, the luminescent material layer 150, the first semiconductor material layer 140, the first conductive material layer 130, and the support on the carrier board 30 The material layer 120 forms a second conductive layer 171, a second semiconductor layer 161, a light emitting layer 151, a first semiconductor layer 141, a first conductive layer 131, and a support layer 121 constituting each of the light emitting diode crystals 110, respectively. Of course, the separation etching process may be performed first and then the platform etching process may be performed, or the platform etching process may be performed first and then the separation etching process may be performed, which is not limited in the present invention.

Referring to FIG. 1F, after forming a plurality of light-emitting diode grains 110, for example, the bonding material layer 20 (shown in FIG. 1E) can be patterned by etching to form a patterned bonding layer 21. The patterned bonding layer 21 has a plurality of bonding layer openings 21 a, and the bonding layer openings 21 a correspond to the light emitting diode die 110 where the surface 30 a of the carrier plate 30 is exposed.

Referring to FIG. 1G, after the patterned adhesive layer 21 is formed, an insulating material layer 180 is formed on the surface 30 a of the carrier plate 30. The insulating material layer 180 covers the light emitting diode die 110, the patterned bonding layer 21, and the carrier 30 exposed by the bonding layer opening 21a.

In this embodiment, the insulating material layer 180 is covered on the carrier board 30. That is, the insulating material layer 180 may conformally cover the surface 30a of the light emitting diode die 110, the patterned bonding layer 21, and the surface 30 of the carrier plate 30 exposed by the bonding layer opening 21a.

Referring to FIG. 1H and FIG. 1M, after forming the insulating material layer 180 (shown in FIG. 1G), for example, the insulating material layer 180 can be patterned by etching to form a plurality of patterned insulating layers 181 and a plurality of Connection structure 182. The light emitting diode die 110 and the connection structure 182 are connected to each other, and the patterned insulating layer 181 covers the light emitting diode die 110 so that the light emitting diode die 110 and the carrier plate 30 are connected through the connection structure 182. Connected to each other.

In this embodiment, each of the patterned insulating layers 181 includes a first opening 181a and a second opening 181b. The first opening 181 a exposes a portion of the first conductive layer 131 in each light-emitting diode die 110 that is not covered by the first semiconductor layer 141. The second opening 181b exposes a portion of the second conductive layer 171 in each of the light-emitting diode grains 110.

Referring to FIG. 1I, after the patterned insulating layer 181 and the connection structure 182 are formed, the patterned adhesive layer 21 between the light-emitting diode die 110 and the carrier plate 30 is removed (shown in FIG. 1H). In this way, there is a gap 41 between the light emitting diode crystal grains 110 and the carrier plate 30, and each light emitting diode crystal grain 110 is connected to the carrier plate 30 through a corresponding connection structure 182.

In this embodiment, each light emitting diode die 110 is connected to the carrier plate 30 through a corresponding connection structure 182, but the present invention is not limited thereto. In other embodiments, each light emitting diode die 110 is connected to the carrier board 30 through a plurality of corresponding connection structures 182.

Please refer to FIG. 1J. For example, a light-emitting diode die 110 may be obtained by using a pick and place machine, polydimethylsiloxane (PDMS) substrate transfer, or other suitable transfer processes. With the supporting layer 121 facing the array substrate 50, the light-emitting diode crystal is mounted on the array substrate 50 having the active element 51. For example, during the process of pressing down or extracting the micro pick-up or transfer substrate, stress will be generated between the light-emitting diode die 110 and the carrier plate 30, and the aforementioned stress will cause the light-emitting diode. The connection structure 182 between the die 110 and the carrier plate 30 generates a corresponding crack. In this way, the light emitting diode die 110 can be separated from the carrier plate 30 and can be transferred. In other feasible embodiments, the connection structure 182 between the light-emitting diode crystal grains 110 and the carrier plate 30 may also be removed by etching or other suitable methods, so that the light-emitting diode crystal grains 110 are free from The carrier plate 30 is separated and can be transferred.

In this embodiment, the light-emitting diode die 110 may be fixed on the array substrate 50 by an adhesive layer 60. For example, epoxy, photoresist, or silicone or other suitable materials can be applied by coating, adhesion, Sol-Gel method, compression, or other suitable methods. It is formed on the array substrate 50. Then, after the light-emitting diode crystal grains 110 are placed on the glue-coated array substrate 50, a photopolymerization or baking process may be performed according to the properties of the glue, and the glue is cured to form胶 胶 胶层 60。 Adhesive layer 60.

In this embodiment, the light-emitting diode die 110 has a support layer 121, and the thickness 121h of the support layer 121 is greater than the thickness of the adhesive layer 60h. Therefore, during the process of fixing the light-emitting diode crystal grains 110 to the array substrate 50, even if the adhesive material is pressed to make the adhesive adhesive layer 60 have a slight adhesive adhesive protrusion 61, the formed adhesive adhesive layer 60 will not further The first opening 181a of the patterned insulating layer 181 is filled.

Please refer to FIGS. 1K and 1N. For example, a plurality of adhesive layer openings 60 a may be formed on the adhesive layer 60 by yellow light lithography etching, mechanical perforation or laser drilling, or other suitable methods. 60a exposes the corresponding first connection pads 52 and the second connection pads 53 on the array substrate 50.

1L and FIG. 10, a plurality of first electrodes 71 and a plurality of second electrodes 72 are formed on the array substrate 50. Each first electrode 71 is electrically connected to the first conductive layer 131 of the corresponding light-emitting diode die 110 through the first opening 181 a of the corresponding patterned insulating layer 181. Each second electrode 72 is electrically connected to the second conductive layer 171 of the corresponding light emitting diode die 110 through the second opening 181 b of the corresponding patterned insulating layer 181. More specifically, in this embodiment, the first conductive layer 131 of each light emitting diode die 110 is electrically connected to the first connection pad 52 through the first electrode 71; each light emitting diode die 110 The second conductive layer 171 is electrically connected to the second connection pad 53 through the second electrode 72. As mentioned above, since the thickness 121h of the support layer 121 of the light-emitting diode die 110 is greater than the thickness 60h of the adhesive layer 60, when the first electrode 71 is formed, the first electrode 71 can be prevented from passing through the first opening 181a. The possibility of being electrically connected to the first conductive layer 131 can improve the yield of the display device 100.

After the above process, the manufacturing of the display device 100 of this embodiment can be substantially completed. The display device 100 described above includes an array substrate 50, at least one light emitting diode die 110, a patterned insulating layer 181, a first electrode 71, a second electrode 72, and an adhesive layer 60. The light emitting diode die 110 is disposed on the array substrate 50 and is electrically connected to the array substrate 50. The light emitting diode die 110 includes a support layer 121, a first conductive layer 131, a first semiconductor layer 141, a light emitting layer 151, a second semiconductor layer 161, and a second conductive layer 171 sequentially stacked from the array substrate 50. In the vertical projection direction of the array substrate 50, the vertical projection area of the first semiconductor layer 141 is smaller than the vertical projection area of the support layer 121 and is within the range of the vertical projection area of the support layer 121. The patterned insulating layer 181 covers the light-emitting diode die 110, and the patterned insulating layer 181 has at least a first opening 181a and at least a second opening 181b. The first electrode 71 is electrically connected to the first conductive layer 131 through the first opening 181a. The second electrode 72 is electrically connected to the second conductive layer 171 through the second opening 181b. The adhesive layer 60 is located between the array substrate 50 and the support layer 121 of the light-emitting diode die 110.

The array substrate 50 includes an active device 51. The second electrode 72 is electrically connected to the active device 51 through the second connection pad 53 to receive the corresponding voltage transmitted by the active device 51. The active device 51 includes a source S, a drain D, a gate G, and a channel layer CH. The gate G is electrically connected to a scanning line (not shown). The source S is electrically connected to the data line (not shown). In this embodiment, the active device 51 is, for example, a low temperture poly Si thin film transistor (LTPS TFT), but the invention is not limited thereto. In operation, the first electrode 71 is electrically connected to a common voltage source through the first connection pad 52 to receive a common voltage output by the common voltage source, and the gate G can control the active element 51. On (on) and off (off), when the active element 51 is on (on), the active element 51 can allow the source S to be electrically conducted to the drain D through the channel layer CH to make the light emitting diode The die 110 receives a corresponding voltage transmitted from the drain D and emits light.

In this embodiment, the supporting layer 121 is made of an insulating material. In the vertical projection direction of the array substrate 50, a portion of the upper surface 131a of the first conductive layer 131 is not covered by the first semiconductor layer 141, and a first opening 181a is provided corresponding to a portion of the upper surface 131a of the first conductive layer 131. Therefore, the first electrode 71 can be disposed in the first opening 181a, and can be directly in contact with and electrically connected to the first conductive layer 131.

In this embodiment, the thickness 121h of the support layer 121 is greater than the thickness 60h of the adhesive layer 60, and the support layer 121 may include a Bragg reflection structure. In this way, during the manufacturing process of the display device 100, the adhesive layer 60 can be prevented from filling the first opening 181a of the patterned insulating layer 181. In addition, in the application of the display device 100, the Bragg reflection structure of the support layer 121 can be used to reflect the light generated by the light emitting material layer 150, thereby increasing the light utilization rate and improving the light emitting efficiency of the display device 100.

FIG. 2A, FIG. 2B, FIG. 2C, FIG. 2F, and FIG. 2G are partial cross-sectional views of a part of a manufacturing process of a display device according to a second embodiment of the present invention. FIG. 2D is a schematic partial top view of a manufacturing process of a display device according to a second embodiment of the present invention. FIG. 2E is a schematic partial top view of a manufacturing process of a display device according to a second embodiment of the present invention. Specifically, the cross-sectional positions shown in FIG. 2B and FIG. 2C can refer to the cross-sectional positions shown in FIG. 1E and FIG. 1I; FIG. 2F can be a schematic cross-sectional view taken along the line DD 'in FIG. 2D; and FIG. 2G can be FIG. 2E The cross-sectional schematic diagram of the middle E-E 'section line is shown clearly for the sake of brevity. In FIG. 2D and FIG. 2E, a part of the mold layer is omitted. It must be noted here that the embodiment of FIGS. 2A to 2G follows the component numbers and parts of the embodiments of FIGS. 1A to 10, in which the same or similar symbols are used to indicate the same or similar components, and the same components are omitted. For the description of the technical content, for the description of the omitted parts, refer to the foregoing embodiments, and the following embodiments are not repeated.

Please refer to FIGS. 2A to 2G at the same time. The manufacturing process of the display device 200 of this embodiment is similar to the manufacturing process of the display device 100 of the embodiment of FIGS. 1A to 10. The difference between the two is that the supporting material layer 220 includes a conductive material. . In detail, the manufacturing method of the display device 200 of this embodiment can be described as follows.

First, please refer to FIG. 2A. A substrate 10 is provided, wherein a surface 10a of the substrate 10 has a second semiconductor material layer 160, a light emitting material layer 150, a first semiconductor material layer 140, and a first conductive layer that are sequentially and comprehensively covered on the surface 10a of the substrate 10. The material layer 130 and the supporting material layer 220.

In this embodiment, the supporting material layer 220 includes a conductive material. In this embodiment, the supporting material layer may include a conductive distributed Bragg reflector. The material of the conductive distributed Bragg reflector is, for example, a laminate of aluminum, silicon, and / or silicon dioxide, but the present invention is not limited thereto. In another embodiment, the supporting material layer 220 may be a metal and has a reflective function.

Please refer to FIGS. 2A to 2B. Similar to the steps of FIG. 1A to FIG. 1E, a plurality of through-second conductive material layers 170, second semiconductor material layers 160, light-emitting material layers 150, first semiconductor material layers 140, and first conductive layers may be formed by a separate etching process. The material layer 130 and the trench 40 ′ supporting the material layer 220 constitute the second conductive layer 171, the second semiconductor layer 161, the light emitting layer 151, the first semiconductor layer 141, and the first The conductive layer 231 and the support layer 221.

In this embodiment, since the support layer 221 of the light-emitting diode die 210 includes a conductive material, the area of the first conductive layer 231 may be equal to the area of the first semiconductor layer 141, that is, the area of the support layer 221 may be The area larger than the area of the first semiconductor layer 141 or the support layer 221 may be larger than the area of the first conductive layer 231, but the present invention is not limited thereto. Since both the support layer 221 and the first conductive layer 231 of the light-emitting diode die 210 can conduct electricity, in other embodiments, the area of the first conductive layer 231 may be equal to the area of the support layer 221.

Please refer to FIG. 2B to FIG. 2C. First, similar to the steps of FIG. 1E to FIG. 1I, after forming the insulating material layer 180 (as shown in FIG. 1G), the insulating material layer 180 can be patterned by, for example, etching to form a plurality of patterned insulation. The layer 281 and the plurality of connection structures 282. As shown in FIG. 2C, each patterned insulating layer 281 includes a first opening 281a and a second opening 281b, wherein the first opening 281a exposes a portion of each light emitting diode die 210 that is not covered by the first conductive layer 231 The supporting layer 221 and the second opening 281b expose a part of the second conductive layer 171 in each of the light-emitting diode grains 210.

Please refer to FIG. 2D and FIG. 2F. Similar to the steps of FIGS. 1J to 1K, the light-emitting diode crystal 210 is mounted on the array substrate 50 through the adhesive layer 60 with the support layer 221 of the light-emitting diode crystal 210 facing the array substrate 50.

2E and 2G. A plurality of first electrodes 71 and a plurality of second electrodes 72 are formed on the array substrate 50. The first electrode 71 is electrically connected to the first conductive layer 231. The second electrode 72 is electrically connected to the second conductive layer 171. In this embodiment, each first electrode 71 is electrically connected to the supporting layer 221 of the corresponding light emitting diode die 210 through the first opening 281a of the corresponding patterned insulating layer 281, and is electrically connected to the first conductive layer. Layer 231. The second electrode 72 is electrically connected to the second conductive layer 171 through the second opening 281b. More specifically, in this embodiment, the first conductive layer 231 is electrically connected to a common voltage source through the first electrode 71 and the first connection pad 52 to receive a common voltage output by the common voltage source (common voltage); the second conductive layer 171 is electrically connected to the active element 51 through the second electrode 72 and the second connection pad 52 to receive the corresponding voltage transmitted by the active element 51, but the present invention is not limited thereto.

It is worth noting that since the support layer 221 of the light-emitting diode die 210 can conduct electricity, the configuration of the patterned insulating layer 281 needs to cover at least part of the side surface 221b of the support layer 221 so that the second electrode 72 The support layer 221 can be separated from each other by patterning the insulating layer 281.

After the above process, the manufacturing of the display device 200 of this embodiment can be substantially completed. The display device 200 of this embodiment is similar to the display device 100 of the previous embodiment, except that the support layer 221 includes a conductive material, and the area of the support layer 221 of each light-emitting diode die 210 is larger than the area of the first semiconductor layer 141. . In the vertical projection direction of the array substrate 50, a portion of the upper surface 221a of the support layer 221 is not covered by the first conductive layer 231, and a first opening 281a is provided correspondingly to a portion of the upper surface 221a of the support layer 221 so that the first The electrode 71 may be disposed in the first opening 281a, and may be directly in contact with the support layer 221 and electrically connected.

In this embodiment, the thickness 221h of the support layer 221 is greater than the thickness 60h of the adhesive layer 60, and the support layer 221 may include a Bragg reflection structure. In this way, during the manufacturing process of the display device 200, it is possible to prevent the adhesive layer 60 from filling the first opening 281 a of the patterned insulating layer 281. In addition, in the application of the display device 200, the Bragg reflection structure of the support layer 221 can be used to reflect the light generated by the luminescent material layer 150, thereby increasing the light utilization rate and improving the light output efficiency of the display device 200.

In summary, the present invention covers the substrate with the second semiconductor material layer, the light emitting material layer, the first semiconductor material layer, the first conductive material layer, and the supporting material layer for constituting the light emitting diode crystal grains. A patterning step is performed, and the aforementioned mold layer is transferred to a carrier board. Since the aforementioned mold layer is not patterned, there is no influence caused by the offset during the transfer process. Then, after the second conductive material layer for forming the light-emitting diode crystal grains is covered on the carrier board, the second conductive material layer, the second semiconductor material layer, the light-emitting material layer, the first semiconductor material layer, the first A conductive material layer and a supporting material layer are patterned to form a plurality of light-emitting diode crystal grains separated from each other, and the light-emitting diode crystal grains on the carrier board are connected to the carrier board through a connection structure. Then, the light-emitting diode crystals are transferred to the array substrate to constitute a display device. Therefore, the image caused by the shift of the light emitting diode crystal grains during the manufacturing process can be reduced, and the yield of the display device can be improved.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

100, 200: Display device 10: Substrate 10a: Surface of substrate 20: Adhesive material layer 21: Patterned adhesive layer 21a: Adhesive layer opening 30: Carrier board 30a: Surface of carrier board 40, 40 ': Trench 41: Gap 50: Array substrate 51: Active element S: Source D: Drain G: Gate CH: Channel layer 52: First connection pad 53: Second connection pad 60: Adhesive layer 60a: Adhesive layer opening 60h: Adhesive Thickness of the adhesive layer 61: Adhesive protrusions 71: First electrode 72: Second electrode 110, 210: Light-emitting diode grains 120, 220: Support material layer 130: First conductive material layer 140: First semiconductor material layer 150: luminescent material layer 160: second semiconductor material layer 170: second conductive material layer 180: insulating material layers 121, 221: support layer 221a: upper surface of the support layer 221b: side surfaces of the support layer 121h, 221h: support layer Thickness 131, 231: first conductive layer 131a: upper surface of the first conductive layer 141: first semiconductor layer 151: light emitting layer 161: second semiconductor layer 171: second conductive layer 181, 281: patterned insulating layer 181a 281a: First opening 181b, 2 81a: second opening 182: connection structure

1A to 1L are schematic partial cross-sectional views illustrating a manufacturing process of a display device according to a first embodiment of the present invention. FIG. 1M is a schematic partial top view of a manufacturing process of a display device according to a first embodiment of the present invention. FIG. 1N is a schematic partial top view of a manufacturing process of a display device according to a first embodiment of the present invention. FIG. 10 is a schematic partial top view of a manufacturing process of a display device according to a first embodiment of the present invention. FIG. 2A, FIG. 2B, FIG. 2C, FIG. 2F, and FIG. 2G are partial cross-sectional views of a part of a manufacturing process of a display device according to a second embodiment of the present invention. FIG. 2D is a schematic partial top view of a manufacturing process of a display device according to a second embodiment of the present invention. FIG. 2E is a schematic partial top view of a manufacturing process of a display device according to a second embodiment of the present invention.

Claims (12)

A method for manufacturing a display device includes: providing a substrate, wherein a second semiconductor material layer, a light emitting material layer, a first semiconductor material layer, a first conductive material layer are stacked on a surface of the substrate, and A supporting material layer; connecting the supporting material layer on the substrate to a carrier board through a bonding material layer; removing the substrate to expose the second semiconductor material layer on the carrier board; forming a first Two conductive material layers are formed on the second semiconductor material layer on the carrier board; a plurality of penetrating the second conductive material layer, the second semiconductor material layer, the light emitting material layer, the first semiconductor material layer, the first A conductive material layer and grooves of the supporting material layer to form a plurality of light-emitting diode grains separated from each other; the bonding material layer is patterned to form a patterned bonding layer, and the patterned bonding layer has a plurality of Next layer openings, which correspond to the light-emitting diode die configuration and expose a part of the carrier board; forming an insulating material layer on the carrier board to cover the light-emitting diodes Bulk die, the patterned adhesive layer and the carrier exposed by the openings of the adhesive layer; patterning the insulating material layer to form a plurality of patterned insulating layers and a plurality of connection structures, wherein the connection structures are connected Between the light-emitting diode chips and the carrier board; and removing the patterned adhesive layer so that the light-emitting diode chips are connected to the carrier board through the connection structures, and the There is a gap between the light-emitting diode grains and the carrier plate. The method for manufacturing a display device according to item 1 of the scope of patent application, wherein: the second semiconductor material layer, the light-emitting material layer, the first semiconductor material layer, and the first conductive layer stacked on the surface of the substrate The material layer and the supporting material layer cover the surface of the substrate; and in the step of forming the second conductive material layer, the second conductive layer covers the second semiconductor material layer. According to the method for manufacturing a display device according to item 1 of the scope of patent application, in the step of forming the insulating material layer, the insulating material layer covers the carrier board. The method for manufacturing a display device according to item 1 of the scope of patent application, wherein the material of the supporting material layer includes silicon oxide. The method for manufacturing a display device according to item 1 of the scope of patent application, wherein the second conductive material layer, the second semiconductor material layer, the light emitting material layer, the first semiconductor material layer, and the first conductive material are formed through In the steps of the material layer and the trenches supporting the material layer, a second conductive layer, a second semiconductor layer, a light emitting layer, a first semiconductor layer, A first conductive layer and a support layer. The method for manufacturing a display device according to item 5 of the scope of patent application, wherein the supporting material layer includes a conductive material, and an area of the supporting layer of each of the light emitting diode crystal grains is larger than an area of the first semiconductor layer; Each of the patterned insulating layers includes a first opening, and the first opening exposes the supporting layer corresponding to the light-emitting diode grains. The method for manufacturing a display device according to item 5 of the scope of patent application, wherein the supporting material layer is an insulating material, and an area of the first conductive layer of each of the light emitting diode grains is larger than that of the first semiconductor layer. Area; and each of the patterned insulating layers includes a first opening, and the first opening exposes the first conductive layer corresponding to the light-emitting diode grains. The method for manufacturing a display device according to item 6 or item 7 of the scope of patent application, wherein each of the patterned insulating layers further includes a second opening, and the second opening exposes the corresponding light-emitting diode die.的 此 第二 conductive 层。 The second conductive layer. The method for manufacturing a display device according to item 5 of the scope of patent application, further comprising: providing an array substrate, wherein a surface of the array substrate has an adhesive layer; removing the light-emitting diode grains and the The connection structures between the carrier boards; and the support layer of the light emitting diode crystal grains is oriented toward the array substrate to transfer the light emitting diode crystal grains onto the array substrate. A display device includes: an array substrate; at least one light-emitting diode die disposed on the array substrate and electrically connected to the array substrate, wherein the at least one light-emitting diode die includes A support layer, a first conductive layer, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a second conductive layer are sequentially stacked, wherein the support layer includes a conductive material; a vertical In the projection direction, the vertical projection area of the first semiconductor layer is smaller than the vertical projection area of the support layer and lies within the range of the vertical projection area of the support layer, and a part of the upper surface of the support layer is not covered by the first conductive layer; A patterned insulating layer is disposed on the at least one light-emitting diode die. The patterned insulating layer has at least a first opening and at least a second opening. In the vertical projection direction of the array substrate, the At least one first opening is provided corresponding to the upper surface of the support layer of the portion; a first electrode is electrically connected to the first conductive layer; a second electrode is electrically connected To the second conductive layer, wherein the first electrode is disposed in the at least one first opening to be electrically connected to the first conductive layer through the support layer, and the second electrode is connected to the second conductive layer through the at least one second opening and The second conductive layer is electrically connected; and an adhesive layer is located between the array substrate and the support layer of the at least one light-emitting diode crystal, wherein the support layer overlaps the at least one light-emitting diode crystal A part of the particles has a thickness greater than the thickness of the adhesive layer. The display device as described in claim 10, wherein the thickness of the support layer is greater than the thickness of the adhesive layer. The display device as described in claim 10, wherein the patterned insulating layer further covers at least a part of a side surface of the supporting layer.