TWI643029B - 評價方法、曝光方法、及物品的製造方法 - Google Patents
評價方法、曝光方法、及物品的製造方法 Download PDFInfo
- Publication number
- TWI643029B TWI643029B TW105135975A TW105135975A TWI643029B TW I643029 B TWI643029 B TW I643029B TW 105135975 A TW105135975 A TW 105135975A TW 105135975 A TW105135975 A TW 105135975A TW I643029 B TWI643029 B TW I643029B
- Authority
- TW
- Taiwan
- Prior art keywords
- optical system
- projection optical
- information
- characteristic value
- program
- Prior art date
Links
- 238000011156 evaluation Methods 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims description 69
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000003287 optical effect Effects 0.000 claims abstract description 140
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 230000004075 alteration Effects 0.000 claims abstract description 68
- 238000001514 detection method Methods 0.000 claims abstract description 50
- 238000012546 transfer Methods 0.000 claims abstract description 24
- 230000008859 change Effects 0.000 claims description 7
- 201000009310 astigmatism Diseases 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 3
- 238000012360 testing method Methods 0.000 description 21
- 238000005259 measurement Methods 0.000 description 18
- 230000008569 process Effects 0.000 description 12
- 238000003384 imaging method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000005286 illumination Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lens Barrels (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-254866 | 2015-12-25 | ||
| JP2015254866A JP6661371B2 (ja) | 2015-12-25 | 2015-12-25 | 評価方法、露光方法、および物品の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201723678A TW201723678A (zh) | 2017-07-01 |
| TWI643029B true TWI643029B (zh) | 2018-12-01 |
Family
ID=59234097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105135975A TWI643029B (zh) | 2015-12-25 | 2016-11-04 | 評價方法、曝光方法、及物品的製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6661371B2 (ko) |
| KR (1) | KR102126232B1 (ko) |
| CN (1) | CN106919004B (ko) |
| TW (1) | TWI643029B (ko) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6978926B2 (ja) * | 2017-12-18 | 2021-12-08 | キヤノン株式会社 | 計測方法、計測装置、露光装置、および物品製造方法 |
| JP7105582B2 (ja) * | 2018-03-09 | 2022-07-25 | キヤノン株式会社 | 決定方法、露光方法、露光装置、物品の製造方法及びプログラム |
| JP7357488B2 (ja) * | 2019-09-04 | 2023-10-06 | キヤノン株式会社 | 露光装置、および物品製造方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1376238A2 (en) * | 2002-06-21 | 2004-01-02 | Nikon Corporation | A system for correcting aberration and distortion in EUV litography |
| US6778275B2 (en) * | 2002-02-20 | 2004-08-17 | Micron Technology, Inc. | Aberration mark and method for estimating overlay error and optical aberrations |
| EP1580605B1 (en) * | 2004-03-25 | 2007-05-02 | ASML Netherlands B.V. | Method of determining aberration of a projection system of a lithographic apparatus |
| US20120026477A1 (en) * | 2010-07-30 | 2012-02-02 | ASML Neitherlands B.V. | Lithographic Apparatus, Aberration Detector and Device Manufacturing Method |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH068926B2 (ja) * | 1984-08-24 | 1994-02-02 | キヤノン株式会社 | 面位置検出方法 |
| JPH10284414A (ja) * | 1997-04-10 | 1998-10-23 | Nikon Corp | 結像位置検出装置及び半導体デバイスの製造方法 |
| JPH11260703A (ja) * | 1998-03-16 | 1999-09-24 | Sony Corp | 露光装置および露光装置の投影レンズの評価方法 |
| JP4649717B2 (ja) | 1999-10-01 | 2011-03-16 | 株式会社ニコン | 露光方法及び露光装置、デバイス製造方法 |
| JP2002022609A (ja) * | 2000-07-10 | 2002-01-23 | Canon Inc | 投影露光装置 |
| AU2002222663A1 (en) | 2000-12-18 | 2002-07-01 | Nikon Corporation | Wavefront measuring apparatus and its usage, method and apparatus for determining focusing characteristics, method and apparatus for correcting focusing characteristics, method for managing focusing characteristics, and method and apparatusfor exposure |
| JP2003215423A (ja) | 2002-01-28 | 2003-07-30 | Nikon Corp | 光学系の製造方法，投影光学装置および露光装置 |
| JP3968320B2 (ja) | 2003-04-18 | 2007-08-29 | トヨタ自動車株式会社 | 車両用赤外線映像装置及びハイビームヘッドランプ構造 |
| US7158215B2 (en) * | 2003-06-30 | 2007-01-02 | Asml Holding N.V. | Large field of view protection optical system with aberration correctability for flat panel displays |
| CN1312464C (zh) * | 2004-04-29 | 2007-04-25 | 上海微电子装备有限公司 | 成像光学系统像差的现场测量方法 |
| CN101174092B (zh) * | 2006-10-30 | 2010-10-06 | 上海华虹Nec电子有限公司 | 用于监控镜头慧差导致成像畸变的方法及其透镜成像系统 |
| CN101221372A (zh) * | 2008-01-25 | 2008-07-16 | 中国科学院上海光学精密机械研究所 | 光刻机投影物镜偶像差原位检测系统及检测方法 |
| CN101236362B (zh) * | 2008-01-29 | 2010-06-23 | 北京理工大学 | 光刻机投影物镜波像差在线检测方法 |
| CN101464637B (zh) * | 2008-12-30 | 2011-03-30 | 上海微电子装备有限公司 | 光刻机投影物镜波像差测量装置及方法 |
| CN102681358B (zh) * | 2012-04-18 | 2014-02-12 | 中国科学院上海光学精密机械研究所 | 基于空间像检测的投影物镜波像差原位测量方法 |
-
2015
- 2015-12-25 JP JP2015254866A patent/JP6661371B2/ja active Active
-
2016
- 2016-11-04 TW TW105135975A patent/TWI643029B/zh active
- 2016-12-16 KR KR1020160172663A patent/KR102126232B1/ko active IP Right Grant
- 2016-12-20 CN CN201611180236.3A patent/CN106919004B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6778275B2 (en) * | 2002-02-20 | 2004-08-17 | Micron Technology, Inc. | Aberration mark and method for estimating overlay error and optical aberrations |
| EP1376238A2 (en) * | 2002-06-21 | 2004-01-02 | Nikon Corporation | A system for correcting aberration and distortion in EUV litography |
| EP1580605B1 (en) * | 2004-03-25 | 2007-05-02 | ASML Netherlands B.V. | Method of determining aberration of a projection system of a lithographic apparatus |
| US20120026477A1 (en) * | 2010-07-30 | 2012-02-02 | ASML Neitherlands B.V. | Lithographic Apparatus, Aberration Detector and Device Manufacturing Method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017116867A (ja) | 2017-06-29 |
| KR20170077041A (ko) | 2017-07-05 |
| KR102126232B1 (ko) | 2020-06-24 |
| TW201723678A (zh) | 2017-07-01 |
| CN106919004B (zh) | 2019-11-26 |
| JP6661371B2 (ja) | 2020-03-11 |
| CN106919004A (zh) | 2017-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW563042B (en) | Overlay error mode, its sampling strategy procedure and device using the mode and strategy procedure | |
| US20090220872A1 (en) | Detecting apparatus, exposure apparatus, and device manufacturing method | |
| TWI643029B (zh) | 評價方法、曝光方法、及物品的製造方法 | |
| US20070019176A1 (en) | Exposure apparatus and method | |
| JP2010103216A (ja) | 露光装置 | |
| US8373866B2 (en) | Wavefront aberration measuring apparatus, wavefront aberration measuring method, exposure apparatus, and device manufacturing method | |
| CN111338186B (zh) | 决定方法、曝光方法、曝光装置以及物品制造方法 | |
| US20140152991A1 (en) | Level Sensor of Exposure Apparatus and Wafer-Leveling Methods Using the Same | |
| TW464946B (en) | Method and apparatus for measuring positional shift/distortion by aberration | |
| TW201007369A (en) | Exposure apparatus, correction method, and device manufacturing method | |
| KR100708770B1 (ko) | 위치검출장치, 표면형상 추정장치, 그리고, 노광장치 및 이것을 이용한 디바이스의 제조방법 | |
| JP3870153B2 (ja) | 光学特性の測定方法 | |
| JP5503193B2 (ja) | 波面収差の測定装置、露光装置及びデバイス製造方法 | |
| JP2010109160A (ja) | 測定装置、露光装置及びデバイス製造方法 | |
| JP2009104024A (ja) | 露光マスク、フォーカス測定方法及びパターン形成方法 | |
| JP2009047523A (ja) | 干渉測定装置、露光装置およびデバイス製造方法 | |
| JP2010147109A (ja) | 評価方法、露光装置およびデバイス製造方法 | |
| TWI651602B (zh) | 評價方法、物品製造方法及評價程式 | |
| JP2009170559A (ja) | 露光装置およびデバイス製造方法 | |
| US6977717B1 (en) | Method and device for determining projection lens pupil transmission distribution and illumination intensity distribution in photolithographic imaging system | |
| JP2016009767A (ja) | 露光装置、および物品の製造方法 | |
| JP2004172316A (ja) | 投影光学系の収差計測方法及び装置、並びに露光装置 | |
| TW202207276A (zh) | 調整方法、曝光方法、曝光裝置及物品製造方法 | |
| JP2019159029A (ja) | 決定方法、露光方法、露光装置、物品の製造方法及びプログラム | |
| JP7320986B2 (ja) | 露光装置及び物品の製造方法 |