TWI582902B - Substrate structure and manufacturing method thereof - Google Patents

Description

Substrate structure and manufacturing method thereof

The present invention relates to a substrate structure and a method of fabricating the same. More specifically, the present invention relates to a semiconductor substrate structure and a method of fabricating the same.

In a new generation of electronic products, users are not only pursuing thinner and lighter, but also demanding versatility and high performance. Therefore, electronics manufacturers must accommodate more electronic components in a limited area of an integrated circuit (IC) to achieve high density and miniaturization requirements. Accordingly, electronics manufacturers have developed new packaging technologies that embed electronic components in the substrate, thereby significantly reducing the package size of the integrated circuit and shortening the connection path between the electronic components and the substrate. In addition, electronics manufacturers use build-up to increase cabling area to meet the trend of thin, light, and versatile electronics.

Under the demand of high-end technology, most high-order chips are fabricated by flip chip (FC). Further, a method called chip scale package (CSP) is currently mainly used in mainstream products that require high-frequency/high-speed operation and light and short (eg, smart mobile phones, tablets, notebooks). Packaging technology for products such as computers or micro-digital cameras. On the other hand, the substrate for packaging is developed toward fine wiring pitch, high density, thinness, low cost, and high electrical characteristics.

Generally, glass fiber is used as a substrate structure which is required to be greatly thinned, and the cost of the glass fiber is too high, and the rigidity and heat dissipation are not as good as the metal material, so that the substrate containing the glass fiber is easily warped and the substrate containing the glass fiber is used. The difficulty of laser drilling has also increased, which in turn has resulted in poor hole diameters for laser drilling and cannot meet the wiring requirements of fine wiring. At the same time, the use of laser drilling technology to form a laminated structure of laser blind holes has a long processing time and a complicated process, thus making it contain The substrate structure of glass fiber does not have industrial advantages.

Therefore, the electronic product manufacturer uses a metal material as a substrate in the substrate structure to improve the aforementioned defect of the substrate structure using the glass fiber as the substrate. However, due to the conductivity of the metal material, in the laminated structure of the substrate using the metal material, it is necessary to consider the insulation design of the via holes between the layers, which increases the complexity of the process. In addition, the substrate using the metal material needs to use the laser drilling technique in the same layer structure to form the laser blind hole and use the mechanical drilling technique to form the through hole, so that the offset due to the alignment error is generated. It cannot meet the wiring requirements of fine lines.

In view of this, how to provide a substrate structure having rigidity and heat dissipation and satisfying fine line pitch, high density, thinness, low cost, and high electrical characteristics is an urgent problem to be solved in the industry.

It is an object of the present invention to provide a substrate structure. The substrate structure comprises a dielectric material layer, a first wire layer, a second wire layer, a metal core layer, a first conductive pillar layer and a second conductive pillar layer. The first wire layer and the second wire layer are respectively disposed on one of the first surface and the second surface of the dielectric material layer. The metal core layer is embedded in the dielectric material layer and has at least one metal block. The first conductive pillar layer is embedded in the dielectric material layer and disposed between the metal core layer and the first wire layer, and has at least one conductive pillar. The second conductive pillar layer is embedded in the dielectric material layer and disposed between the metal core layer and the second wire layer, and has at least one conductive pillar. The at least one metal block has a first end and a second end opposite the first end. The first end and the second end are respectively electrically connected to at least one conductive pillar of the first conductive pillar layer and at least one conductive pillar of the second conductive pillar layer, and one of the first end has a width and the second end One of the widths is different.

Another object of the present invention is to provide a method of fabricating a substrate structure. The manufacturing method includes the following steps: providing a metal plate; etching the metal plate to form a metal core layer, wherein the metal core layer has a plurality of metal blocks and at least one coupling block, the metal blocks respectively having a first And the second end of the first end, and the metal blocks are partially coupled by the at least one coupling block; Forming a dielectric material layer on the at least one coupling block and the metal blocks; etching the metal core layer to remove the at least one coupling block, and widthing one of the first ends and the second end Forming the dielectric material layer on the metal blocks to cover the metal core layer; exposing the first end and the second end of one of the metal blocks; forming a first a conductive pillar layer on the first end of one of the metal blocks; forming a second conductive pillar layer on the second end of one of the metal blocks; forming a first wire layer on the dielectric material And constituting a second wire layer on one of the second surfaces of the dielectric material layer.

It is still another object of the present invention to provide a substrate structure. The substrate structure comprises a dielectric material layer, at least one wire layer, a metal core layer and at least one conductive pillar layer. The at least one wire layer is disposed on a surface of the dielectric material layer. The metal core layer is embedded in the dielectric material layer and has at least one metal block. The conductive pillar layer is embedded in the dielectric material layer and disposed between the metal core layer and the at least one wire layer. The at least one metal block has a first end and a second end opposite the first end. One of the first end and the second end is electrically connected to the at least one conductive pillar layer, and one of the first ends has a width different from a width of one of the second ends.

In summary, the substrate structure and the manufacturing method thereof of the present invention replace the substrate containing the glass fiber by using the substrate of the metal material, and at the same time, form the metal core layer, the conductive pillar layer and the wire layer in a relatively simple manufacturing process, and replace Traditionally, laser drilling techniques have been used to form laser blind holes and mechanical drilling techniques have been used to form the vias. Accordingly, the substrate structure and the manufacturing method thereof of the present invention can achieve the wiring requirements of the fine lines, thereby reducing the substrate size, increasing the electrical and signal stability, and satisfying the high electrical characteristics, and having both rigidity and heat dissipation. As a result, the processing time of the substrate structure can be shortened and the manufacturing cost can be greatly reduced.

Other objects, advantages, and technical means and embodiments of the present invention will become apparent to those skilled in the <RTIgt;

10, 20‧‧‧ substrate structure

101‧‧‧ dielectric material layer

1011‧‧‧ first surface

1013‧‧‧ second surface

103‧‧‧First wire layer

105‧‧‧Second wire layer

107A, 107B, 107C, 107D‧‧‧ metal blocks

109‧‧‧Internal components

1091‧‧‧conductive electrode layer

111‧‧‧First conductive column

113‧‧‧Second conductive column

201‧‧‧ Third conductive column

203‧‧‧fourth conductive pillar

205A, 205B‧‧‧epoxy mold compound layer

401‧‧‧Metal plate

403A, 403B‧‧‧ coupling block

Fig. 1 is a schematic view showing the structure of a substrate according to a first embodiment of the present invention.

Fig. 2 is a schematic view showing the structure of a substrate of a second embodiment of the present invention.

Fig. 3 is a flow chart showing a method of fabricating a substrate structure according to a third embodiment of the present invention.

4A to 4I are schematic views showing the fabrication of the substrate structure of the third embodiment of the present invention.

Figure 5 is a flow chart for forming a layer of dielectric material.

Fig. 6 is a flow chart showing a method of fabricating a substrate structure according to a fourth embodiment of the present invention.

7A to 7D are views showing the fabrication of the substrate structure of the fourth embodiment of the present invention.

The present invention is not limited by the embodiment, and the embodiment of the present invention is not intended to limit the invention to any specific environment, application or special mode as described in the embodiments. Therefore, the description of the embodiments is merely illustrative of the invention and is not intended to limit the invention. It should be noted that, in the following embodiments and drawings, components that are not directly related to the present invention have been omitted and are not shown; and the dimensional relationships between the components in the drawings are merely for ease of understanding and are not intended to limit the actual ratio.

A first embodiment of the present invention, as shown in FIG. 1, is a schematic view of a substrate structure 10. The substrate structure 10 includes a dielectric material layer 101, a first wire layer 103, a second wire layer 105, a metal core layer, a first conductive pillar layer 111, a second conductive pillar layer 113, and an inscribed component. 109. The dielectric material layer 101 has a first surface 1011 and a second surface 1013. The metal core layer has a plurality of metal blocks 107A, 107B, 107C, 107D. The first conductive pillar layer 111 and the second conductive pillar layer 113 respectively have a plurality of conductive pillars. The internal component 109 further includes a conductive electrode layer 1091.

The dielectric material layer 101 is a Molding Compound layer having a Novolac-based Resin, an Epoxy-based Resin, a Silicone-based Resin or the like. Suitable mold compounds, but not limited to this. Further, in the present embodiment, the metal core layer has four metal blocks 107A, 107B, 107C, 107D. However, in other embodiments, depending on the use and type of substrate structure 10, the metal core layer There may be any number of metal blocks, and is not limited to the four metal blocks 107A, 107B, 107C, 107D described in this embodiment. Similarly, in the present embodiment, the first conductive pillar layer 111 has six conductive pillars; the second conductive pillar layer 113 has two conductive pillars. However, in other embodiments, the first conductive pillar layer 111 and the second conductive pillar layer 113 may have any number of conductive pillars respectively according to different uses and types of the substrate structure 10, and are not electrically conductive as described in this embodiment. The number of columns is limited.

The metal block 107A has a first end having a width X1 and a second end having a width Y1 with respect to the first end. Similarly, metal block 107B has a first end having a width X2 and a second end having a width Y2 relative to the first end. The metal block 107C has a first end having a width X3 and a second end having a width Y3 with respect to the first end. The metal block 107D has a first end having a width X4 and a second end having a width Y4 with respect to the first end. The first ends X2 and X4 of the metal blocks 107B and 107D are electrically connected to the conductive pillars of the first conductive pillar layer 111; the second ends Y2 and Y4 of the metal blocks 107B and 107D are electrically connected to the conductive pillars of the second conductive pillar layer 113.

In this embodiment, the width Y1 of the second end of the metal block 107A is greater than the width X1 of the first end; the width Y2 of the second end of the metal block 107B is greater than the width X2 of the first end; the second end of the metal block 107C The width Y3 is greater than the width X3 of the first end; the width Y4 of the second end of the metal block 107D is approximately the same as the width X4 of the first end. In other words, the widths X1, X2, and X3 of the first ends of the metal blocks 107A, 107B, and 107C are different from the widths Y1, Y2, and Y3 of the second end, respectively.

The first conductive pillar layer 111 is embedded in the dielectric material layer 101 and disposed between the metal core layer and the first conductive layer 103. Meanwhile, the first conductive pillar layer 111 is electrically connected to the metal core layer and the first conductive layer 103. Similarly, the second conductive pillar layer 113 is embedded in the dielectric material layer 101 and disposed between the metal core layer and the second conductive layer 105. Meanwhile, the second conductive pillar layer 113 is electrically connected to the metal core layer and Two wire layers 105.

The metal blocks 107A, 107B, 107C, 107D and the inscribed element 109 are embedded in the dielectric material layer 101. The first wire layer 103 is disposed on the first surface 1011 of the dielectric material layer 101. The second wire layer 105 is disposed on the second surface 1013 of the dielectric material layer 101. In addition, the metal blocks 107A, 107B, 107C, 107D are disposed on the first conductive Between the pillar layer 111 and the second conductive pillar layer 113. In this embodiment, the conductive electrode layer 1091 of the interconnecting component 109 is electrically connected to the first conductive pillar layer 111. However, in other embodiments, the conductive layer 1091 of the inscribed component 109 can be electrically connected to the second conductive pillar layer 113 according to the position of the placement, and is not electrically connected to the first conductive layer as described in this embodiment. The column layer 111 is limited.

A second embodiment of the present invention, as shown in FIG. 2, is a schematic view of a substrate structure 20. The structure of the substrate structure 20 is similar to the structure of the substrate structure 10 of the first embodiment of the present invention. The difference is that the substrate structure 20 further includes a third conductive pillar layer 201, a fourth conductive pillar layer 203, and a second ring. Oxygen mold compound layers 205A, 205B. The third conductive pillar layer 201 is partially electrically connected to the first wiring layer 103 and disposed in the epoxy mold compound layer 205A. The fourth conductive pillar layer 203 is partially electrically connected to the second wiring layer 105 and disposed in the epoxy mold compound layer 205B. The epoxy mold compound layer 205A coats the first wire layer 103; the epoxy mold compound layer 205B covers the second wire layer 105.

It should be noted that the substrate structures 10 and 20 described in the preceding paragraph each include two wire layers, and the wire layers are electrically connected to the conductive pillars of the conductive pillar layer. However, in other embodiments, the substrate structures 10, 20 may comprise only one wire layer, and the wire layers thereof are electrically connected to the conductive pillars of the conductive pillar layer. Those skilled in the art can understand the number of the wire layers of the substrate structures 10 and 20 and the manner in which the wire layers are electrically connected to the conductive pillars of the conductive pillar layer through the foregoing description, and thus will not be described herein.

A third embodiment of the present invention is shown in FIG. 3, which is a flow chart of a method of fabricating a substrate structure. The fabrication method described in this embodiment can be used to fabricate a substrate structure, such as the substrate structure 10 of the first embodiment. The steps of the method of fabricating the substrate structure of the present embodiment will be further described below through FIG. 3 and FIGS. 4A to 4I.

First, in step 301, a metal plate 401 is provided as shown in FIG. 4A. Among them, the metal plate 401 is a metal plate made of aluminum, copper, stainless steel or a combination thereof.

Next, in step 303, the metal plate 401 is etched to form a metal core layer as shown in FIG. 4B. Wherein the metal core layer has a plurality of metal blocks 107A, 107B, 107C, 107D and two coupling blocks 403A, 403B. The metal blocks 107A, 107B, 107C, 107D each have a first end and a second end opposite the first end. At the same time, the metal block 107A and the metal block 107B are partially coupled by the coupling block 403A; the metal block 107B and the metal block 107C are partially coupled by the coupling block 403B.

In step 305, as shown in FIG. 4C, the inscribed element 109 is placed between the metal block 107C and the metal block 107D. The internal component 109 includes a conductive electrode layer 1091. Next, in step 307, as shown in FIG. 4D, a dielectric material layer 101 is formed on the coupling blocks 403A, 403B and the metal blocks 107A, 107B, 107C, 107D.

In step 309, as shown in FIG. 4E, the metal core layer is etched to remove the coupling blocks 403A, 403B, and the width of one of the first ends of the metal blocks 107A, 107B, 107C and the width of one of the second ends, respectively. different. In detail, the width Y1 of the second end of the metal block 107A is greater than the width X1 of the first end; the width Y2 of the second end of the metal block 107B is greater than the width X2 of the first end; and the width Y3 of the second end of the metal block 107C Greater than the width X3 of the first end.

In step 311, as shown in FIG. 4F, a dielectric material layer 101 is formed on the metal blocks 107A, 107B, 107C, and 107D, and the dielectric material layer 101 is coated with the metal core layers 107A, 107B, and 107C of the metal core layer. 107D. In step 313, as shown in FIG. 4G, the conductive electrode layer 1091 is exposed and the first end and the second end of the metal blocks 107A, 107B, 107C, and 107D are selectively exposed. Wherein, step 313 exposes the first end and the second end of the metal blocks 107B, 107D.

In step 315, as shown in FIG. 4H, a first conductive pillar layer 111 is formed on the conductive electrode layer 1091 and the metal blocks 107B and 107D having the first end exposed; and a first wiring layer 103 is formed on the dielectric layer. One of the material layers 101 is on the first surface 1011. In detail, the first conductive pillar layer 111 is formed on the first end of one of the metal blocks 107A, 107B, 107C, 107D. Finally, in step 317, as shown in FIG. 4I, a second conductive pillar layer 113 is formed on the metal blocks 107B and 107D having the second end exposed; and a second wiring layer 105 is formed on the dielectric material layer 101. One of the second surfaces 1013. In detail, the second conductive pillar layer 113 is formed on the second end of one of the metal blocks 107A, 107B, 107C, 107D.

In addition, in steps 307 and 311 of forming the dielectric material layer 101 on the metal blocks 107A, 107B, 107C, and 107D, the steps as shown in FIG. 5 are further included. First, in step 501, a mold compound is provided. Among them, the mold compound may be a phenolic resin, an epoxy resin, a ruthenium-based resin or other suitable mold compound. In step 503, the mold compound is heated to a liquid state. Next, in step 505, a mold compound exhibiting a liquid state is injected into the metal blocks 107A, 107B, 107C, and 107D, and the mold compound exhibiting a liquid state is coated with the metal blocks 107A, 107B, 107C, and 107D of the metal core layer. Finally, in step 507, the mold compound in a liquid state is solidified to form a mold compound layer. In other words, the aforementioned mold compound layer is the dielectric material layer 101.

A fourth embodiment of the present invention is shown in Fig. 6, which is a flow chart of a method of fabricating a substrate structure. The fabrication method described in this embodiment can be used to fabricate a substrate structure, such as the substrate structure 20 described in the second embodiment. The steps 601 to 617 of the fourth embodiment shown in FIG. 6 are the same as the steps 301 to 317 of the third embodiment of the present invention, and thus are not described herein again. The subsequent steps of the method of fabricating the substrate structure of the present embodiment will be further described below through FIG. 6 and FIGS. 7A through 7D.

In step 619, a third conductive pillar layer 201 as shown in FIG. 7A is formed on the first wire layer 103. The third conductive pillar layer 201 is partially electrically connected to the first conductive layer 103. In step 621, a fourth conductive pillar layer 203 as shown in FIG. 7B is formed on the second wire layer 105. The fourth conductive pillar layer 203 is partially electrically connected to the second conductive layer 105.

Next, in step 623, an epoxy mold compound layer 205A is formed as shown in FIG. 7C. The epoxy mold compound layer 205A covers the first wire layer 103. Finally, in step 625, an epoxy mold compound layer 205B is formed as shown in FIG. 7D. The epoxy mold compound layer 205B covers the second wire layer 105.

In summary, the substrate structure and the manufacturing method thereof of the present invention replace the substrate containing the glass fiber by using the substrate of the metal material, and at the same time, form the metal core layer, the conductive pillar layer and the wire layer in a relatively simple manufacturing process, and replace Conventional use of laser drilling techniques to form laser blind holes and use mechanical drilling techniques to form vias The process. Accordingly, the substrate structure and the manufacturing method thereof of the present invention can achieve the wiring requirements of the fine lines, thereby reducing the substrate size, increasing the electrical and signal stability, and satisfying the high electrical characteristics, and having both rigidity and heat dissipation. As a result, the processing time of the substrate structure can be shortened and the manufacturing cost can be greatly reduced.

The embodiments described above are only intended to illustrate the embodiments of the present invention, and to explain the technical features of the present invention, and are not intended to limit the scope of protection of the present invention. Any changes or equivalents that can be easily made by those skilled in the art are within the scope of the invention. The scope of the invention should be determined by the scope of the claims.

10‧‧‧Substrate structure

101‧‧‧ dielectric material layer

1011‧‧‧ first surface

1013‧‧‧ second surface

103‧‧‧First wire layer

105‧‧‧Second wire layer

107A, 107B, 107C, 107D‧‧‧ metal blocks

109‧‧‧Internal components

1091‧‧‧conductive electrode layer

111‧‧‧First conductive column

113‧‧‧Second conductive column

Claims (10)

A substrate structure comprising: a dielectric material layer; a first wire layer disposed on a first surface of the dielectric material layer; a second wire layer disposed on a second surface of the dielectric material layer; a metal core layer embedded in the dielectric material layer and having at least one metal block; a first conductive pillar layer embedded in the dielectric material layer and disposed on the metal core layer and the first Between the wire layers, having at least one conductive pillar; and a second conductive pillar layer embedded in the dielectric material layer and disposed between the metal core layer and the second wire layer, having at least one conductive pillar Wherein the at least one metal block has a first end and a second end opposite to the first end, the first end and the second end are electrically connected to the at least one conductive post of the first conductive pillar layer respectively And at least one conductive pillar of the second conductive pillar layer, and one of the first ends has a width different from a width of one of the second ends. The substrate structure of claim 1, further comprising an inscribed component embedded in the dielectric material layer and having a conductive electrode layer, wherein the conductive electrode layer is electrically connected to the first conductive pillar layer and One of the second conductive pillar layers. The substrate structure of claim 1, wherein the width of the second end is greater than the width of the first end. The substrate structure according to claim 1, wherein the dielectric material layer is a Molding Compound layer having a phenolic resin (Novolac-based Resin) and an epoxy resin (Epoxy- Based on Resin) and one of Silicone-based Resin. A method for fabricating a substrate structure, comprising the steps of: providing a metal plate; etching the metal plate to form a metal core layer, wherein the metal core layer has a plurality of metal blocks and at least one coupling block, the metal blocks respectively Having a first end and a second end opposite to the first end, and the metal blocks are partially coupled by the at least one coupling block; forming a dielectric material layer on the at least one coupling block And the metal blocks; Etching the metal core layer to remove the at least one coupling block, and making one of the first ends different in width from one of the second ends; forming the dielectric material layer on the metal blocks to enable the dielectric layer a layer of electrical material covering the metal core layer; exposing the first end and the second end of one of the metal blocks; forming a first conductive pillar layer on the first end of one of the metal blocks; forming a a second conductive pillar layer on the second end of one of the metal blocks; a first wiring layer formed on one of the first surfaces of the dielectric material layer; and a second wiring layer formed on the dielectric material One of the layers is on the second surface. The method of claim 5, wherein the step of forming a layer of dielectric material further comprises the steps of: providing a mold compound; heating the mold compound to a liquid state; and injecting a mold compound exhibiting the liquid state into the liquid The first end and the second end of the metal block, the mold compound exhibiting the liquid state is coated with the metal core layer; and the mold compound exhibiting the liquid state is cured to form a mold compound layer. The manufacturing method according to claim 5, wherein the metal plate is made of one of aluminum, copper, stainless steel, and a combination thereof. The method of claim 5, wherein the width of the second end is greater than the width of the first end. A substrate structure comprising: a dielectric material layer; at least one wire layer disposed on a surface of the dielectric material layer; a metal core layer embedded in the dielectric material layer, having at least one metal block; And at least one conductive pillar layer embedded in the dielectric material layer and disposed between the metal core layer and the at least one wire layer; wherein the at least one metal block has a first end and opposite to the first a second end of one end, one of the first end and the second end electrically connected to the at least one a conductive pillar layer, and one of the first ends has a width different from a width of one of the second ends. The substrate structure of claim 9, further comprising an inscribed component embedded in the dielectric material layer and having a conductive electrode layer, wherein the conductive electrode layer is electrically connected to the at least one conductive pillar layer.