TWI570350B - Illumination device - Google Patents

Description

Illuminating device

The present invention provides a semiconductor light emitting device and related light emitting device, and more particularly to a semiconductor light emitting device that can provide a multidirectional light source, and a light emitting device having the semiconductor light emitting device.

The light emitted by the light emitting diode (LED) itself is a directional light source, not a divergent light source like a conventional light bulb. Therefore, the LEDs are limited in application. For example, conventional light-emitting diodes are unable or difficult to achieve the desired illuminating effect in general indoor/outdoor lighting applications. In addition, the light-emitting device of the conventional light-emitting diode can emit light only on one side, and has low luminous efficiency.

It is an object of the present invention to provide a semiconductor light emitting element which can provide a multidirectional light source, a light emitting device having the foregoing semiconductor light emitting element, and a device base of a light emitting device. The object of the present invention is to improve luminous efficiency, improve light shape, and reduce cost.

A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate and a plurality of light emitting diode structures. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. At least a portion of the plurality of light emitting diode structures is disposed on the support surface, and forms a first major surface that is illuminable with a portion of the support surface on which the light emitting diode structure is not disposed. Each of the light emitting diode structures includes a first electrode and a second electrode. Light emitted by at least one of the light emitting diode structures passes through the transparent substrate and exits the second major surface.

A preferred embodiment of the invention discloses a light emitting device. The light emitting device includes at least one semiconductor light emitting element and a carrier. The semiconductor light emitting device includes a transparent substrate and a plurality of light emitting diode structures. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. At least a portion of the plurality of light emitting diode structures is disposed on the support surface, and forms a first major surface that is illuminable with a portion of the support surface on which the light emitting diode structure is not disposed. Each of the light emitting diode structures includes a first electrode and a second electrode. Light emitted by at least one of the light emitting diode structures passes through the transparent substrate and exits the second major surface. The semiconductor light emitting element is disposed on the carrier, and the first angle is formed between the semiconductor light emitting element and the carrier.

A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate and at least one light emitting diode structure. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface, and forms a first main surface illuminable with a portion of the support surface not provided with the light emitting diode structure. The light emitting diode structure includes a first electrode and a second electrode. The light-emitting diode structure has a light-emitting angle greater than 180 degrees, and at least part of the light emitted by the light-emitting diode structure is incident on the transparent substrate and is emitted by the second main surface.

A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate and at least one light emitting diode structure. The material of the transparent substrate comprises a sapphire substrate and has a supporting surface and a second main surface disposed opposite each other. The light emitting diode structure is disposed on the support surface, and the light exit angle is greater than 180 degrees. At least part of the light emitted by the LED structure is incident on the transparent substrate and is emitted by the second main surface.

A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate, at least one light emitting diode structure and a wavelength conversion layer. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface, and forms a first main surface illuminable with a portion of the support surface not provided with the light emitting diode structure. Light-emitting diode The light exiting angle of the structure is greater than 180 degrees, and at least part of the light emitted by the light emitting diode structure is incident on the transparent substrate and is emitted by the second main surface. The wavelength conversion layer is disposed at least on the light emitting diode structure or the second main surface. The wavelength conversion layer at least partially absorbs the light emitted by the light emitting diode structure and converts it into light of another wavelength.

A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate and a plurality of light emitting diode structures. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. A plurality of light emitting diode structures are disposed on the support surface. The light-emitting surface of each of the light-emitting diode structures not shielded by the transparent substrate and the partial support surface not provided with the light-emitting diode structure together form a first main surface that can emit light. The light-emitting diode structure of each of the plurality of light-emitting diode structures has an exit angle of more than 180 degrees. Light emitted by at least one of the light emitting diode structures is incident on the transparent substrate and is emitted by the second main surface. The area of the first major surface or the area of the second major surface is more than five times the total area of at least one of the light-emitting surfaces of each of the light-emitting diode structures 3.

A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device comprises a transparent substrate, at least one type of drilled carbon film and at least one light emitting diode structure. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The diamond-like carbon film is disposed on a transparent substrate. The light emitting diode structure is disposed on the support surface. The light-emitting surface of the light-emitting diode structure not shielded by the transparent substrate and the partial support surface not provided with the light-emitting diode structure together form a first main surface that can emit light. The light-emitting diode structure has a light-emitting angle greater than 180 degrees, and part of the light emitted by the light-emitting diode structure is incident on the transparent substrate and is emitted by the second main surface.

A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate, at least one light emitting diode structure and a mirror. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The mirror is disposed on the second major surface. The light emitting diode structure is disposed on the support surface. The light emitting surface of the light emitting diode structure is not shielded by the transparent substrate and the light emitting surface is not provided A portion of the support surfaces of the polar body structure together form a first major surface that is illuminable. The light exiting angle of the light emitting diode structure is greater than 180 degrees.

A preferred embodiment of the invention discloses a semiconductor light emitting device. The semiconductor light emitting device includes a transparent substrate, at least one light emitting diode structure, a first connecting wire and a second connecting wire. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface, and the light emitting surface of the light emitting diode structure not shielded by the transparent substrate and the partial supporting surface not provided with the light emitting diode structure form a first main surface that can emit light. The light exiting angle of the light emitting diode structure is greater than 180 degrees. Part of the light emitted by the LED structure is incident on the transparent substrate and is emitted by the second main surface. The first connecting wire and the second connecting wire are respectively disposed on different sides of the transparent substrate. The first connecting wire and the second connecting wire are electrically connected to the light emitting diode structure.

A preferred embodiment of the invention discloses a light emitting device. The light emitting device includes a semiconductor light emitting element and a bracket. The semiconductor light emitting device includes a transparent substrate, at least one light emitting diode structure, a first connecting wire and a second connecting wire. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface, and forms a first main surface illuminable with a portion of the support surface not provided with the light emitting diode structure. The light exiting angle of the light emitting diode structure is greater than 180 degrees. Part of the light emitted by the LED structure is incident on the transparent substrate and is emitted by the second main surface. The first connecting wire and the second connecting wire are respectively disposed on different sides of the transparent substrate. The first connecting wire and the second connecting wire are electrically connected to the light emitting diode structure. The bracket includes at least one notch, and the arrangement of the semiconductor light emitting elements corresponds to the notch.

A preferred embodiment of the invention discloses a light emitting device. The light emitting device includes a plurality of semiconductor light emitting elements and a device base. Each of the semiconductor light emitting elements includes a transparent substrate, at least one light emitting diode structure, a first connecting wire and a second connecting wire. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The LED structure is arranged on the support surface, and the hair is not set A portion of the support surface of the photodiode structure forms a first major surface that is illuminable. The light exiting angle of the light emitting diode structure is greater than 180 degrees. Part of the light emitted by the LED structure is incident on the transparent substrate and is emitted by the second main surface. The first connecting wire and the second connecting wire are respectively disposed on different sides of the transparent substrate. The first connecting wire and the second connecting wire are electrically connected to the light emitting diode structure. The device base includes a carrier and a plurality of brackets extending from the carrier. Each of the brackets includes at least one notch, and the plurality of semiconductor light emitting elements are disposed to correspond to at least a portion of the plurality of notches.

A preferred embodiment of the invention discloses a light emitting device. The light emitting device includes a plurality of semiconductor light emitting elements and a light bar. Each of the semiconductor light emitting elements includes a transparent substrate, at least one light emitting diode structure, a first connecting wire and a second connecting wire. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface, and forms a first main surface illuminable with a portion of the support surface not provided with the light emitting diode structure. The light exiting angle of the light emitting diode structure is greater than 180 degrees. Part of the light emitted by the LED structure is incident on the transparent substrate and is emitted by the second main surface. The first connecting wire and the second connecting wire are respectively disposed on different sides of the transparent substrate. The first connecting wire and the second connecting wire are electrically connected to the light emitting diode structure. The light bar includes a plurality of notches. The light bar has an extending direction, and a plurality of notches are disposed along the extending direction. The plurality of semiconductor light emitting elements are arranged to correspond to at least a portion of the plurality of indentations.

A preferred embodiment of the invention discloses a light emitting device. The light emitting device includes a plurality of semiconductor light emitting elements and a carrier. Each of the semiconductor light emitting elements includes a transparent substrate, at least one light emitting diode structure, a first connecting wire and a second connecting wire. The transparent substrate has a supporting surface and a second main surface disposed opposite to each other. The light emitting diode structure is disposed on the support surface, and forms a first main surface illuminable with a portion of the support surface not provided with the light emitting diode structure. The light exiting angle of the light emitting diode structure is greater than 180 degrees. Part of the light emitted by the LED structure is incident on the transparent substrate and is emitted by the second main surface. The first connecting wire and the second connecting wire are respectively disposed on different sides of the transparent substrate. The first connecting wire and the second connecting wire are electrically connected to the light emitting diode structure. Carrier bag A plurality of notches are arranged and arranged in an array pattern. The plurality of semiconductor light emitting elements are arranged to correspond to at least a portion of the plurality of indentations.

A preferred embodiment of the present invention discloses a device base for a light emitting device. The base of the device includes a carrier and a plurality of brackets. Each bracket extends to the carrier. Each of the brackets includes at least one notch, and a plurality of electrodes are disposed on both sides of the notch.

In the light-emitting device of the present invention, the light-emitting diode structure is fixed on the transparent substrate, and the transparent substrate allows light emitted from the light-emitting diode structure to pass therethrough. Therefore, the illuminating device of the present invention can emit omnidirectional light or omnidirectional light. The luminous efficiency of the light-emitting device can be correspondingly improved, and the light shape of the light-emitting diode light-emitting device can also be improved.

1, 310‧‧‧ semiconductor light-emitting components

1a‧‧‧First group of light-emitting elements

1b‧‧‧Second group of light-emitting elements

11, 10, 10', 50, 301, 302‧‧‧ illuminating devices

12M‧‧‧ non-planar structure

14‧‧‧Lighting diode structure

141‧‧‧Base

142‧‧‧N type semiconductor layer

143‧‧‧ active layer

144‧‧‧P type semiconductor layer

18‧‧‧Second connecting wire

2‧‧‧Transparent substrate

20‧‧‧First connecting wire

22‧‧‧Second connecting wire

210‧‧‧Support surface

21A‧‧‧ first major surface

21B‧‧‧Second major surface

23A‧‧‧Connecting wires

23B‧‧‧Second connecting wire

25, 9‧‧‧Drilling carbon film

26‧‧‧Hosting

28‧‧‧ wafer bonding layer

28A‧‧‧First wafer bonding layer

28B‧‧‧Second wafer bonding layer

3‧‧‧Lighting diode structure

30, 32‧‧‧ electrodes

31A, 16‧‧‧ first electrode

31B, 18‧‧‧ second electrode

311A‧‧‧First connection electrode

311B‧‧‧Second connection electrode

322‧‧‧Device base

330‧‧‧ gap

34‧‧‧Lighting surface

341‧‧‧ bearing seat

342‧‧‧ Strip

4‧‧‧wavelength conversion layer

5, 26‧‧‧ bearing seat

5a‧‧ symmetry center

51, 62, 321‧‧‧ bracket

52, 63‧‧‧ component joint layer

6‧‧‧ circuit board

60‧‧‧Loading mechanism

61‧‧‧ slots

7‧‧‧shade

8‧‧‧ Filter

Θ1‧‧‧ first angle

V+, V-‧‧‧ drive voltage

L‧‧‧Light

P‧‧‧ circuit pattern

H‧‧‧ Hole

G‧‧‧ gap

1 and 2 are schematic views showing the structure of a semiconductor light emitting element according to a preferred embodiment of the present invention.

3, 4, and 5 are schematic diagrams showing the coupling of different forms of the LED structure 3 and the wires according to a preferred embodiment of the present invention.

6 and 7 are schematic views showing the configuration of a wavelength conversion layer according to a preferred embodiment of the present invention.

Figure 8 is a cross-sectional view showing a semiconductor light emitting device according to another preferred embodiment of the present invention.

Figure 9 is a cross-sectional view showing a semiconductor light emitting device according to another preferred embodiment of the present invention.

Figure 10 is a perspective view of a semiconductor light emitting device according to another preferred embodiment of the present invention.

Figure 11 is a schematic view of a carrier of a preferred embodiment of the present invention.

Figure 12 is a schematic view of a circuit board in accordance with a preferred embodiment of the present invention.

Figure 13 is a schematic view of a mirror according to a preferred embodiment of the present invention.

Figure 14 is a schematic view of a carbon-like carbon film according to a preferred embodiment of the present invention.

Figure 15 is a schematic view of a light-emitting device according to another preferred embodiment of the present invention.

Figure 16 is a schematic view of a light-emitting device according to another preferred embodiment of the present invention.

Figure 17 is a schematic view of a light-emitting device according to another preferred embodiment of the present invention.

18, 19, and 20 are schematic views showing the transparent substrate being inserted or bonded to the carrier according to a preferred embodiment of the present invention.

21 and 22 are schematic views showing a transparent substrate adhered to a carrier having a holder according to a preferred embodiment of the present invention.

Figure 23 is a schematic view of a light-emitting device according to another preferred embodiment of the present invention.

Figure 24 is a schematic view showing the base of the apparatus of the light-emitting device according to another preferred embodiment of the present invention.

Figure 25 is a perspective view of a light-emitting device according to another preferred embodiment of the present invention.

26, 27, 28, and 29 are schematic views showing a transparent substrate disposed in a bearing mechanism in a point symmetrical or line symmetrical form according to a preferred embodiment of the present invention.

Figure 30 is a schematic view of a light-emitting device according to another preferred embodiment of the present invention.

31 and 32 are schematic views of a lampshade according to a preferred embodiment of the present invention.

Figure 33 is a schematic view showing a light-emitting device according to a first embodiment of the present invention.

Fig. 34 is an illuminance diagram of the light-emitting device shown in Fig. 33.

Figure 35 is a partial schematic view showing a light-emitting device according to a second embodiment of the present invention.

Figure 36 is a side view of a light-emitting device according to a second embodiment of the present invention.

Fig. 37 is an illuminance diagram of the light-emitting device shown in Figs. 35 and 36.

38 and 39 are respectively partial schematic views of different types of light-emitting devices according to an embodiment of the present invention.

Figure 40 is a illuminance diagram of one of the light-emitting devices of the preferred embodiment of the present invention.

Please refer to FIG. 1 and FIG. 2, and FIG. 1 and FIG. 2 are schematic diagrams showing the structure of a semiconductor light emitting device according to a preferred embodiment of the present invention. As shown in FIGS. 1 and 2, the semiconductor light emitting device 1 includes: a transparent substrate 2; a support surface 210; a first main surface 21A; a second main surface 21B; and at least one light emitting diode structure 3. . The flat or sheet-like transparent substrate 2 itself has two main surfaces, one of which is a support surface 210, and a light-emitting diode structure 3 having a light-emitting function can be disposed on the support surface 210. The light-emitting surface 34 of the light-emitting diode structure 3 that is not shielded by the transparent substrate 2 and the partial support surface 210 where the light-emitting diode structure 3 is not provided together form a first main surface 21A that can emit light. The other main surface of the transparent substrate 2 not provided with the light emitting diode structure 3 is the second main surface 21B. The foregoing arrangement may be reversed, and the light emitting diode structure 3 may be disposed on both sides of the transparent substrate 2. In an embodiment of the present invention, the LED structure 3 can be disposed on the support surface 210 of the transparent substrate 2 and interlaced with the other LED structures 3 disposed on the second main surface 21B to make the transparent substrate 2 When the light-emitting diode structure 3 on each surface emits light, the light is not blocked by the other light-emitting diode structure 3 on the other surface of the transparent substrate 2, so that the light-emitting intensity of the semiconductor light-emitting element 1 can be increased accordingly. The material of the transparent substrate 2 such as a sapphire substrate, a ceramic substrate, a glass substrate, a plastic or rubber substrate, or the like may be selected from the group consisting of alumina (Al ₂ O ₃ ), magnesium oxide, cerium oxide, cerium oxide, cerium oxide, zirconium oxide, a material such as lead zirconate titanate, gallium arsenide, zinc sulfide, zinc selenide, calcium fluoride, magnesium fluoride, tantalum carbide (SiC) or a chemical polymer, wherein one of the preferred embodiments of the present invention is The sapphire substrate serves as the transparent substrate 2. Since the sapphire substrate is substantially a single crystal structure, not only has a good light transmittance, but also has a good heat dissipation capability, and the life of the semiconductor light emitting element 1 can be extended. However, the use of a conventional sapphire substrate may cause fragility in the present invention. Therefore, the present invention has been experimentally verified that the transparent substrate 2 of the present invention is preferably a sapphire substrate having a thickness greater than or equal to 200 micrometers (um). Achieve better reliability, and have better load bearing and light transmission functions. In order to enable the semiconductor light-emitting element 1 to efficiently emit multi-directional light, such as bidirectional or omnidirectional light, the semiconductor light-emitting element 1 of the present invention has at least one light-emitting diode structure 3 preferably having a light-emitting angle of more than 180 degrees. Correspondingly, the light emitting diode structure 3 disposed on the transparent substrate 2 can emit light from the light emitting surface 34 toward the transparent substrate 2, and the light emitting diode structure 3 also emits light at least partially entering the transparent substrate 2. The light entering the transparent substrate 2 can be emitted from the second main surface 21B of the transparent substrate 2, or the support surface 210 of the light-emitting diode structure 3 and the other surfaces of the substrate 2 can be emitted. The semiconductor light emitting element 1 can emit light at least on both sides, emit light in multiple directions, or emit light in all directions. In the present invention, the area of the first major surface 21A or the area of the second major surface 21B is more than five times the sum total area of one of the light-emitting surfaces 34 of all the light-emitting diode structures 3 disposed on the surface thereof. A preferable arrangement ratio is achieved in consideration of conditions such as luminous efficiency and heat dissipation.

In addition, another preferred embodiment of the present invention is such that the difference in color temperature between the first main surface 21A and the second main surface 21B of the semiconductor light emitting element 1 is equal to or less than 1500 K, so that the semiconductor light emitting element 1 has a more uniform illumination effect. In particular, when the thickness of the transparent substrate 2 is as described above, and the light-emitting diode structure 3 having a wavelength range of greater than or equal to 420 nm and/or less than or equal to 470 nm is used, the light of the transparent substrate 2 is used. The penetration rate can be greater than or equal to 70%.

The present invention is not limited to the above embodiments. Other preferred embodiments of the present invention will be described in the following, and in order to facilitate the comparison of the various embodiments and the simplification of the description, the same elements are denoted by the same symbols in the following embodiments, and mainly for each implementation. The differences between the examples are explained, and the repeated parts are not described again.

Referring to FIG. 3, FIG. 4 and FIG. 5, in order to obtain power for light emission, the light emitting diode structure 3 includes a first electrode 31A and a second electrode 31B. The first electrode 31A and the second electrode 31B are electrically connected to the first connecting wire 23A and the second connecting wire 23B on the transparent substrate 2, respectively. Among them, the third figure, the fourth figure and the fifth figure respectively disclose the coupling manner of the different forms of the light emitting diode structure 3 and the wires. 3 is a horizontal light emitting diode structure, and the light emitting diode structure 3 is formed on the supporting surface 210 of the transparent substrate 2, and the first electrode 31A and the second electrode 31B are electrically coupled by wire bonding. The first connecting wire 23A and the second connecting wire 23B. 4 is a flip-chip light-emitting diode structure 3 in which the horizontal light-emitting diode structure 3 is inverted and the light-emitting diode structure 3 is coupled to the transparent substrate 2 by the first electrode 31A and the second electrode 31B. . The first electrode 31A and the second electrode 31B are electrically coupled to the first connecting wire 23A and the second connecting wire 23B, respectively, by soldering or bonding. As shown in FIG. 5, the first electrode 31A and the second electrode 31B are disposed on different faces of the light emitting diode structure 3, and the light emitting diode structure 3 is disposed in an upright manner, so that the first electrode 31A and the second electrode 31B can be Soldering or bonding method with the first connecting wire 23A and the first The two connecting wires 23B are connected.

Referring to FIGS. 6 and 7, the semiconductor light emitting device 1 of the present invention may further include a wavelength conversion layer 4 selectively disposed on the first main surface 21A or/and the second main surface 21B, or It is directly disposed on the light emitting diode structure 3. The wavelength conversion layer 4 can directly contact the light emitting diode structure 3 or be adjacent to the light emitting diode structure 3 at a distance without direct contact. The wavelength conversion layer 4 contains at least one kind of phosphor powder, such as garnet, sulfate or citrate, etc., inorganic or organic phosphor powder. The wavelength conversion layer 4 is configured to convert at least part of the light emitting diode structure 3 into light of another wavelength range. For example, when the light emitting diode structure 3 emits blue light, the wavelength conversion layer 4 can convert part of the blue light to yellow light, and the semiconductor light emitting element 1 finally emits white light under the mixture of blue light and yellow light. In addition, since the light source of the first main surface 21A mainly comes from the light directly emitted by the light emitting diode structure 3, and the light source of the second main surface 21B is the light emitted from the light emitting diode structure 3 through the transparent substrate 2, Therefore, the light intensity (illuminance) of the first main surface 21A is different from the light intensity (illuminance) of the second main surface 21B. Therefore, in the semiconductor light emitting element 1 of another preferred embodiment of the present invention, the phosphor content of the wavelength conversion layer 4 on the first main surface 21A and the second main surface 21B is correspondingly arranged. Preferably, the ratio of the phosphor content of the wavelength conversion layer 4 on the first major surface 21A to the phosphor powder content of the wavelength conversion layer 4 on the second major surface 21B is preferably from 1 to 0.5. Preferably, from 1 to 3, or the ratio of the phosphor content of the wavelength conversion layer 4 on the second major surface 21B to the phosphor content of the wavelength conversion layer 4 on the first major surface 21A is preferably from 1 More than 0.5 to 1 to 3. Thus, the illuminance or light shape of the semiconductor light-emitting element 1 of the present invention can meet different application requirements, and the difference in color temperature between the first main surface 21A and the second main surface 21B of the semiconductor light-emitting element 1 can be controlled to be equal to or less than 1500K. The wavelength conversion efficiency and the light-emitting effect of the semiconductor light-emitting element 1 are improved.

Please refer to Figure 8. Figure 8 is a cross-sectional view showing a semiconductor light emitting device according to another preferred embodiment of the present invention. As shown in FIG. 8, the semiconductor light emitting element 1 of the present embodiment includes A transparent substrate 2 and at least one light emitting diode structure 14 providing a omnidirectional light emitting function. The transparent substrate 2 has a support surface 210 and a second main surface 21B disposed opposite to each other. The light emitting diode structure 14 is disposed on the support surface 210 of the transparent substrate 2. The LED structure 14 includes a first electrode 16 and a second electrode 18 for electrically connecting other devices. A light-emitting surface 34 of the light-emitting diode structure 14 that is not shielded by the transparent substrate 2 and a partial support surface 210 that is not provided with the light-emitting diode structure 14 form a first main surface 21A.

The LED structure 14 can include a substrate 141, an N-type semiconductor layer 142, an active layer 143, and a P-type semiconductor layer 144. In this embodiment, the substrate 141 of the LED structure 14 can be coupled to the transparent substrate 2 by the wafer bonding layer 28. The light exiting brightness can be improved by optimizing the material properties of the wafer bonding layer 28. For example, the reflectivity of the wafer bonding layer 28 is preferably between the reflectivity of the substrate 141 and the reflectivity of the transparent substrate 2, thereby increasing the light exiting brightness of the light emitting diode structure 14. Additionally, the wafer bonding layer 28 can be a transparent adhesive or other suitable bonding material. The first electrode 16 and the second electrode 18 are disposed on the other side of the light emitting diode structure 14 opposite to the wafer bonding layer 28. The first electrode 16 and the second electrode 18 are electrically connected to the P-type semiconductor layer 144 and the N-type semiconductor layer 142, respectively (the connection relationship between the second electrode 18 and the N-type semiconductor layer 142 is not shown in FIG. 8). The horizontal standard of the upper surface of the first electrode 16 and the upper surface of the second electrode 18 is substantially the same. The first electrode 16 and the second electrode 18 may be metal electrodes, but are not limited thereto. Further, the semiconductor light emitting element 1 further includes a first connecting wire 20, a second connecting wire 22, and a wavelength conversion layer 4. The first connecting wire 20 and the second connecting wire 22 are disposed on the transparent substrate 2. The first connecting wire 20 and the second connecting wire 22 may be metal wires or other conductive patterns, but are not limited thereto. The first electrode 16 and the second electrode 18 are respectively connected to the first connecting wire 20 and the second connecting wire 22 by wire bonding or soldering, but are not limited thereto. The wavelength conversion layer 4 is disposed on the transparent substrate 2 and covers the light emitting diode structure 14. Further, the wavelength conversion layer 4 may also be disposed on the second main surface 21B of the transparent substrate 2.

In addition, in this embodiment, in order to increase the light exiting the transparent substrate 2, the light is emitted. The amount and the distribution of the light are made uniform, and the surface of the transparent substrate 2 can also be selectively provided with the non-planar structure 12M. The non-planar structure 12M may be a variety of convex or concave geometric structures, such as pyramids, cones, hemispheres, or triangular columns, and may be arranged in a regular or random manner. Furthermore, a diamond-like carbon (DLC) film 25 may be selectively disposed on the surface of the transparent substrate 2 to increase heat conduction and heat dissipation.

Please refer to FIG. 9. FIG. 9 is a schematic diagram showing a semiconductor light emitting device according to another preferred embodiment of the present invention. In the semiconductor light emitting element 1 of the present embodiment, the first electrode 16, the second electrode 18 and the first wafer bonding layer 28A are disposed on the same side of the light emitting diode structure 14 as compared with the embodiment shown in FIG. . The first electrode 16 and the second electrode 18 are electrically connected to the first connecting wire 20 and the second connecting wire 22 by flip chip bonding. The first connecting wire 20 and the second connecting wire 22 can be respectively generated from the positions of the corresponding first electrode 16 and the second electrode 18. The first electrode 16 and the second electrode 18 can be electrically connected to the first connecting wire 20 and the second connecting wire 22 respectively by a second wafer bonding layer 28B. The second wafer bonding layer 28B may be a conductive bump, such as a gold bump or a solder bump, or a conductive paste, such as a silver paste, or a eutectic alloy layer, such as a gold-tin (Au-Sn) alloy layer. Or a low melting point (In-Bi-Sn) alloy layer, but is not limited thereto. In this embodiment, the first wafer bonding layer 28A can be vacant or include the wavelength conversion layer 4.

Please refer to FIG. 10, which is a perspective view of a semiconductor light emitting device according to another preferred embodiment of the present invention. As shown in FIG. 10, the semiconductor light emitting device 310 of the present invention comprises a transparent substrate 2, at least one light emitting diode structure 3, a first connection electrode 311A, a second connection electrode 311B and at least one wavelength conversion layer 4. The light emitting diode structure 3 is disposed on the support surface 210 of the transparent substrate 2, and forms one of the first main surfaces 21A that can emit light. In this embodiment, one of the light emitting diode structures 3 has an exit angle greater than 180 degrees, and at least a portion of the light emitted by the LED structure 3 is incident on the transparent substrate 2, and at least a portion of the incident light is emitted from Corresponding to the second main surface 21B of one of the first major surfaces 21A, and emitting the rest of the light from the transparent substrate 2 The surface of the semiconductor light-emitting element 310 emits light. The first connection electrode 311A and the second connection electrode 311B are respectively disposed on different sides or the same side of the transparent substrate 2 (not shown in FIG. 10). The first connecting electrode 311A and the second connecting electrode 311B are respectively a first connecting wire of the semiconductor light emitting element 310 on the transparent substrate 2 and a wafer external electrode extended by a second connecting wire, so the first connecting electrode 311A and the first connecting electrode The two connection electrodes 311B are electrically connected to the light emitting diode structure 3 correspondingly. The wavelength conversion layer 4 covers at least the light emitting diode structure 3 and exposes at least a portion of the first connection electrode 311A and the second connection electrode 311B. The wavelength conversion layer 4 at least partially absorbs the light emitted by the light emitting diode structure 3 and/or the transparent substrate 2, and converts it into light of another wavelength range, and then mixes the light that is not absorbed by the wavelength conversion layer 4 to The light-emitting wavelength range of the semiconductor light-emitting element 310 is increased to improve the light-emitting effect of the semiconductor light-emitting element 310. Since the semiconductor light emitting element 310 of the present embodiment has the first connection electrode 311A and the second connection electrode 311B respectively disposed on the transparent substrate 2, the conventional light emitting diode package process can be omitted, and the semiconductor light emitting element 310 can be fabricated separately. Combined with a suitable carrier, it can achieve the advantages of improved overall manufacturing yield, simplified structure and increased design of the mating seat.

Referring to Fig. 11, an embodiment of the present invention uses a light-emitting device 11 of at least one of the foregoing semiconductor light-emitting elements. The light-emitting device 11 includes a carrier 5 and the aforementioned semiconductor light-emitting element. The transparent substrate 2 of the semiconductor light-emitting device can be placed on the carrier 5 and can be erected thereon and coupled to the carrier 5 . The transparent substrate 2 and the carrier 5 have a first angle θ1, and the first angle θ1 can be fixed or varied according to the light shape of the light-emitting device. The range of the first angle θ1 is preferably between 30 degrees and 150 degrees.

Referring to FIG. 12, the carrier 5 of the illumination device 11 of the present invention may further include a circuit board 6 coupled to an external power source. The circuit board 6 is electrically coupled to the first connecting wire and the second connecting wire (not shown in FIG. 12) on the transparent substrate 2, and is electrically connected to the LED structure 3, so that the external power source is transmitted through the circuit board. 6 supplies the light source required for the light emitting diode structure 3 to emit light. In this In other preferred embodiments of the present invention, if the circuit board 6 is not provided, the LED structure 3 can be directly electrically connected to the carrier through the first connecting wire and the second connecting wire (not shown in FIG. 12). 5. The external power source can supply power to the LED structure 3 via the carrier 5.

Referring to FIG. 13, the light-emitting device 11 of the present invention may further include a mirror or a filter 8 disposed on the second main surface 21B or the support surface 210 of the transparent substrate 2. The mirror or filter 8 reflects the light emitted by the LED structure 3 at least partially through the transparent substrate 2, so that a portion of the reflected light is emitted from the first main surface 21A. The mirror 8 may include at least one metal layer or a Bragg reflector, but is not limited thereto. The Bragg mirror may be formed by stacking a plurality of dielectric films having different refractive indices, or by stacking a plurality of dielectric films having different refractive indices and a plurality of metal oxides.

Referring to FIG. 14, the light-emitting device 11 of the present invention may further comprise a diamond-like carbon (DLC) film 9 in which the diamond-like carbon film 9 is disposed on the support surface 210 of the transparent substrate 2 and/or the second. The main surface 21B is added to increase heat conduction and heat dissipation.

Please refer to Figure 15. Figure 15 is a schematic view showing a light-emitting device according to another preferred embodiment of the present invention. As shown in Fig. 15, the light-emitting device 10 of the present embodiment includes a carrier 26 and at least one of the aforementioned semiconductor light-emitting elements. The semiconductor light emitting element includes a transparent substrate 2 and at least one light emitting diode structure 14. The semiconductor light emitting element can be partially embedded in the carrier 26. The electrodes 30, 32 of the carrier 26 are electrically connected to the connecting leads 20, 22 of the semiconductor light emitting element. A power supply can provide a driving voltage V+, V- through the electrodes 30, 32 to drive the LED structure 14 to emit light L. The light emitting diode structure 14 includes a first electrode 16 and a second electrode 18, and electrically connects the first connecting wire 20 and the second connecting wire 22 respectively in a wire bonding manner, but is not limited thereto. In addition, the light-emitting diode structure 14 has an exit angle of more than 180 degrees or has a plurality of light-emitting surfaces, so that the light-emitting device 10 can emit light from the first main surface 21A and the second main surface 21B. Furthermore, because some of the light will also be emitted by the LED junction The four sidewalls of the structure 14 and/or the transparent substrate 2 are emitted, and the light-emitting device 10 can have characteristics of multi-face illumination, six-sided illumination or omnidirectional illumination.

The semiconductor light emitting element further includes a wavelength conversion layer 4 selectively disposed on the light emitting diode structure 14, the first main surface 21A or the second main surface 21B. The wavelength conversion layer 4 can absorb at least a portion of the light emitted by the LED structure 14 and convert it into light of another wavelength range to cause the illumination device 10 to emit light of a particular color or wavelength range. For example, when the light emitting diode structure 14 generates blue light, part of the blue light can be converted into yellow light after being irradiated to the wavelength conversion layer 4, and the light emitting device 10 can emit white light mixed by blue light and yellow light. Further, the transparent substrate 2 may be directly or indirectly fixed to the carrier 26 in a parallel manner or in a non-parallel manner. For example, by fixing one side wall of the transparent substrate 2 to the carrier 26, the transparent substrate 2 can be fixed upright on the carrier 26, or the transparent substrate 2 can be horizontally disposed on the carrier 26, but is not limited thereto. The transparent substrate 2 preferably includes a material having a high thermal conductivity, and the heat generated by the LED structure 14 can be correspondingly dissipated to the carrier 26 via the transparent substrate 2, so that a high-power LED structure can be applied to the present invention. Light emitting device. In addition, in one of the preferred embodiments of the present invention, a plurality of smaller power LED structures are formed on the transparent substrate 12 of the light-emitting device of the present invention under the same power conditions to fully utilize the transparent substrate 12. The heat transfer characteristics, for example, the power of each of the light emitting diode structures 14 of the present embodiment may be equal to or less than 0.2 watts, but not limited thereto.

Please refer to Figure 16. Figure 16 is a schematic view showing a light-emitting device according to another preferred embodiment of the present invention. Compared with the light-emitting device shown in Fig. 15, the light-emitting device 10' of the present embodiment includes a plurality of light-emitting diode structures 14, and at least a portion of the light-emitting diode structures 14 are electrically connected to each other in series. Each of the light emitting diode structures 14 includes a first electrode 16 and a second electrode 18. The first electrode 16 of one of the light emitting diode structures 14 is disposed at one outer end of the series and electrically connected to the first connecting wire 20, and the second electrode 18 of the other light emitting diode structure 14 is disposed in series. The other end is electrically connected to the second connecting wire 22, but is not limited thereto. Multiple LEDs The structures 14 can be electrically connected to one another in series or in parallel. The plurality of light emitting diode structures 14 can emit the same color light, for example, all of the blue light diodes; or the plurality of light emitting diode structures 14 respectively emit different colors of light to meet different application requirements. The illuminating device 10' of the present invention can also emit a greater variety of chromatic colors by the wavelength converting layer 4.

Please refer to Figure 17. Figure 17 is a schematic view showing a light-emitting device according to another preferred embodiment of the present invention. The light-emitting device 50 of the present embodiment further includes a bracket 51 for connecting the semiconductor light-emitting element and the carrier 26 to the light-emitting device shown in FIGS. 15 and 16. The transparent substrate 2 of the semiconductor light emitting element is fixed to one side of the holder 51 by a component bonding layer 52, and the other side of the holder 51 can be embedded or inserted into the carrier 26. In addition, the bracket 51 has elasticity to form an angle between the transparent substrate 2 and the carrier 26, and the included angle is between 30 and 150 degrees. The material of the bracket 51 may include a material selected from the group consisting of aluminum, copper, composite metal, wire, ceramic, printed circuit board, or other suitable material.

Referring to FIG. 18, FIG. 19 and FIG. 20, when the transparent substrate 2 of the present invention is disposed on the carrier 5, one of the preferred embodiments can be transparent by plugging or bonding. The substrate 2 is bonded to the carrier 5.

As shown in FIG. 18, when the transparent substrate 2 is disposed on the carrier 5, the transparent substrate 2 is inserted into the single slot 61 of the carrier 5, and the semiconductor light emitting component is electrically coupled to the connector through the connecting wire. Slot 61. The light emitting diode structure (not shown in FIG. 18 ) on the transparent substrate 2 is electrically coupled to the power source through the carrier 5 , and at least a portion of the conductive pattern or the connecting wire on the transparent substrate 2 is extended and connected to the transparent substrate 2 . The edge is integrated into a gold finger structure or an electrical connection port having a plurality of conductive contacts. For example, the electrical connection port may be the aforementioned connection electrode 311A and connection electrode 311B (not shown in FIG. 18). When the transparent substrate 2 is inserted into the slot 61, the light emitting diode structure (not shown in FIG. 18) can be powered by the carrier 5, and the transparent substrate 2 can be correspondingly fixed to the slot 61 of the carrier 5.

Please refer to FIG. 19 , which is a structural diagram of a plurality of slots in which the transparent substrate 2 is inserted into the carrier 5 . In this embodiment, the transparent substrate 2 has a double pin structure in which one pin is the positive electrode of the semiconductor light emitting element and the other pin is the negative electrode of the semiconductor light emitting element. Both pins have at least one conductive contact to serve as a connection port, respectively. Correspondingly, the carrier 5 has at least two slots 61 corresponding to the size of the pin insertion surface, so that the transparent substrate 2 can be smoothly joined to the carrier 5 and the light emitting diode structure can be powered.

Please refer to Figure 20. The transparent substrate 2 is bonded to the carrier 5 by an element bonding layer. In the process of bonding, the transparent substrate 2 and the carrier 5 can be bonded by soldering with a metal material such as gold, tin, indium, antimony or silver. Alternatively, the conductive substrate or the epoxy resin may be used to fix the transparent substrate 2 on the carrier 5 so that the conductive pattern or the connecting wire of the semiconductor light-emitting device can be electrically connected to the carrier through the component bonding layer.

Please refer to Figure 21 and Figure 22. The carrier 5 of the light-emitting device 11 of the present embodiment may be a substrate, and the substrate material may include a composite metal selected from the group consisting of aluminum, copper, aluminum, a wire, a ceramic or a printed circuit board. The surface or side of the carrier 5 has at least one bracket 62. The bracket 62 is a two-unit member that can be separated from the carrier 5, or an integrated machine member. The semiconductor light emitting device can be coupled to the bracket 62 by means of bonding, that is, the transparent substrate 2 is fixed to the carrier 5 by the component bonding layer 63. The carrier 5 and the transparent substrate 2 have a first included angle θ1 as described above. The surface of the carrier 5 without the support may also be provided with a semiconductor light-emitting element to enhance the light-emitting effect of the light-emitting device 11. In addition, the semiconductor light-emitting element can also be connected to the bracket 62 through a plug-in method (not shown in FIGS. 21 and 22), that is, the semiconductor light-emitting element and the bracket (and/or the bracket and the carrier) are coupled by a connector. The transparent substrate 2 is fixed to the carrier 5. Since the carrier 5 and the bracket 62 are bendable members, the flexibility of the present invention in application is increased. At the same time, different light colors can be combined by using semiconductor light-emitting elements of different light-emitting wavelengths to cause the light-emitting device 11 to emit light. Variability to meet Same needs.

Please refer to Figure 23. As shown in FIG. 23, the light-emitting device of this embodiment includes at least one semiconductor light-emitting element 1 and a carrier 5. The carrier 5 includes at least one bracket 62 and at least one circuit pattern P. One end of the transparent substrate of the semiconductor light emitting element 1 is coupled to the bracket 62 to avoid or reduce the shielding effect of the bracket 62 on the light emitted from the semiconductor light emitting element 1. The material of the carrier 5 may include materials selected from the group consisting of aluminum, copper, aluminum-containing composite metals, wires, ceramics, or printed circuit boards. The bracket 62 is formed by cutting a portion of the carrier 5 and bending it at an angle (such as the first angle θ1 shown in Figs. 21 and 22). The circuit pattern P is disposed on the carrier 5, and the circuit pattern P has at least one set of electrical terminals to electrically connect a power source. The circuit pattern P further extends on the bracket 62 to electrically connect the semiconductor light emitting element 1 to electrically connect the semiconductor light emitting element 1 to the power supply through the circuit pattern P of the carrier 5. In addition, the carrier 5 can further include at least one hole H or at least one notch G, such that a fixing member such as a screw, a nail or a pin can pass the hole H or the notch G to the carrier 5 and other components according to the application situation of the illuminating device. Further construction or installation. At the same time, the arrangement of the hole H or the notch G also increases the heat dissipation area of the carrier 5, thereby improving the heat dissipation effect of the light-emitting device.

Please refer to Figure 24. Figure 24 is a perspective view showing the base of the device of the light-emitting device according to another preferred embodiment of the present invention. As shown in FIG. 24, the device base 322 of the present embodiment includes a carrier 5 and at least one bracket 62. Compared with the embodiment of FIG. 23, the bracket 62 of the embodiment includes at least one strip portion 342 and a notch 330. The electrodes 30 and 32 are respectively disposed on both sides of the notch 330, and the strip portion 342 constitutes at least one side wall of the notch 330. The semiconductor light emitting device of the present invention is coupled to the bracket 62 corresponding to the notch 330. The connecting wires of the semiconductor light emitting element are electrically connected to the electrodes 30 and 32, so that the semiconductor light emitting element can be driven by the circuit pattern on the holder 62 and the carrier 5 to be electrically coupled to a power source. The size of the notch 330 may be not less than one of the main light-emitting surfaces of the semiconductor light-emitting element, so that the light emitted from the semiconductor light-emitting element is not shielded by the holder 62. The connection between the bracket 62 and the carrier 5 can be a movable design, so that the angle between the bracket 62 and the carrier 5 can be visually required. To make adjustments.

Please refer to Figure 24 and Figure 25. Figure 25 is a perspective view showing a light-emitting device according to another preferred embodiment of the present invention. In contrast to the embodiment of FIG. 24, the illumination device 302 shown in FIG. 25 further includes at least one bracket 62 having a plurality of notches 330. A plurality of notches 330 are respectively disposed on opposite sides of the bracket 62, and the strip portions 342 constitute at least one side wall of each of the notches 330. A plurality of semiconductor light-emitting elements 310 are provided corresponding to a plurality of notches 330, and a circuit pattern or a connection electrode (not shown in FIG. 25) of each of the semiconductor light-emitting elements 310 is electrically connected to the electrodes 30 and 32, respectively. The illuminating device 302 of the embodiment further includes a plurality of brackets 62 disposed between the semiconductor light emitting element 1 and the carrier 5. The length of the stent 62 can be substantially between 5.8 and 20 microns (um). The angle between each of the brackets 62 provided with the semiconductor light-emitting elements and the carrier 5 can be adjusted individually as needed. In other words, the angle between the carrier 5 and the at least one bracket 62 may be different from the angle between the carrier 5 and the other brackets 62 to achieve the desired illumination effect, but not limited thereto. In addition, a combination of semiconductor light-emitting elements having different light-emitting wavelength ranges may be provided in the same bracket or different brackets to make the color effect of the light-emitting device more abundant.

In order to improve the brightness and improve the light-emitting effect, the light-emitting device of another preferred embodiment of the present invention simultaneously arranges a plurality of semiconductor light-emitting elements having a transparent substrate on a carrier or other supporting mechanism such as the foregoing embodiment. Arranged in a point symmetrical or line symmetrical arrangement, that is, a plurality of semiconductor light emitting elements having a transparent substrate are disposed on the carrier mechanism in a point symmetrical or line symmetrical manner. Referring to the top view of the light-emitting device 11 of FIGS. 26, 27, 28, and 29, the light-emitting device 11 of each embodiment is provided with a plurality of semiconductor light-emitting elements on various different shapes of the load-bearing mechanism 60, and The arrangement of the symmetry or the line symmetry makes the light emission of the light-emitting device 11 of the present invention uniform (the light-emitting diode structure is omitted). The light-emitting effect of the light-emitting device 11 can be further adjusted and improved by changing the size of the first angle described above. As shown in Fig. 26, the semiconductor light-emitting elements are arranged at a 90-degree angle in a point-symmetric manner, at this time, from the light-emitting device 11 Either of the faces faces the light-emitting device 11 and faces at least two of the semiconductor light-emitting elements. As shown in Fig. 27, the angle between the semiconductor light-emitting elements of the light-emitting device 11 is less than 90 degrees. As shown in Fig. 28, the semiconductor light emitting element of the light-emitting device 11 is disposed at the edge of the carrying mechanism 60. As shown in Fig. 29, the angle between the semiconductor light-emitting elements of the light-emitting device is greater than 90 degrees. In another preferred embodiment of the present invention (not shown), the plurality of semiconductor light emitting elements may be arranged in an asymmetric manner, and at least a portion of the plurality of semiconductor light emitting elements may be concentrated or dispersed to achieve the light emitting device 11 Light shape needs for different applications.

Please refer to Figure 30. Figure 30 is a cross-sectional view showing a light-emitting device according to another preferred embodiment of the present invention. As shown in FIG. 30, the light-emitting device 301 includes a semiconductor light-emitting element 310 and a holder 321 . The bracket 321 includes a notch 330, and the semiconductor light emitting element 310 is disposed corresponding to the notch 330. In this embodiment, the outer portion of the bracket 321 can also be used as a pin or bent into a pad for surface soldering to be fixedly and/or electrically connected to other circuit components. One of the light-emitting surfaces of the semiconductor light-emitting element 310 is disposed in the notch 330. The light-emitting device 301 can maintain the multi-faceted or six-sided light-emitting effect regardless of whether the support 321 is a light-transmitting material.

Please refer to FIG. 31, which is a light-emitting device according to an embodiment of the present invention. The illuminating device comprises a tubular lampshade 7, at least one semiconductor illuminating component 1 and a carrier mechanism 60. The semiconductor light emitting element 1 is disposed on the carrier mechanism 60, and at least a portion of the semiconductor light emitting element 1 is located in a space formed by the tubular lampshade 7. Please refer to the cross-sectional illustration of Figure 32 again. When the plurality of semiconductor light emitting elements 1 are disposed within the globe 7, the first main surfaces 21A of the respective semiconductor light emitting elements 1 are arranged apart from each other in a manner that is not parallel to each other. Further, at least a part of the plurality of semiconductor light-emitting elements 1 is disposed in the space formed by the globe 7 and does not abut against the inner wall of the globe 7. In a preferred embodiment, the distance D between the semiconductor light-emitting element 1 and the lamp cover 7 can be equal to or greater than 500 micrometers (μm); however, the lamp cover 7 can also be formed by potting, and the lamp cover 7 is at least partially covered and directly contacted. The semiconductor light emitting element 1 is used.

Referring to FIG. 23 and FIG. 33, FIG. 33 is a schematic diagram of a light-emitting device 11 according to another embodiment of the present invention. One of the differences between the 23rd and 33rd embodiments is that the number of the semiconductor light-emitting elements 1 of the 33rd embodiment is three, and the semiconductor light-emitting element 1 is disposed around the center of symmetry of the carrier 5. Any one of the plurality of light-emitting elements 1 may include at least one main light-emitting surface that faces the center of symmetry of the carrier 5. In several embodiments of the invention, the number of semiconductor light-emitting elements 1 having at least one main light-emitting surface facing the center of symmetry of the carrier 5 may be at least two. There is at least one first angle θ1 between the corresponding semiconductor light emitting element 1 and the carrier 5, and the range of the first angle θ1 is substantially between 30 and 150 degrees. The light-emitting device 11 of the present embodiment may further include a candle-shaped lamp cover 7 that completely covers the semiconductor light-emitting element 1, the bracket 62 and the carrier 5. Since the light-emitting device 11 may thus generate uneven light when the angle of the first angle θ1 is equal to or close to 90 degrees, in other embodiments, the angle of the first angle θ1 may preferably be equal to or close to 60 degrees or 80 degrees. This angle may vary correspondingly as the distance between the semiconductor light emitting element 1 and the lamp cover 7 changes. For the illuminance diagram of the illuminating device 11 of the present embodiment, please refer to Fig. 34.

Since the light distribution of the light-emitting device 11 in the above embodiment as shown in Figs. 33 and 34 is not uniform enough, the present invention further proposes an embodiment with a preferred improvement. Please refer to Figure 35 and Figure 36. Fig. 35 is a partial schematic view showing a light-emitting device 11 according to another embodiment of the present invention, and Fig. 36 is a corresponding side view of the light-emitting device 11. The light-emitting device 11 of the present embodiment may include at least two brackets 62 and at least two semiconductor light-emitting elements 1. The two brackets 62 are turned relative to the carrier 5 and are not facing the center of symmetry 5a of the carrier 5. The two semiconductor light emitting elements 1 are respectively disposed on the corresponding brackets 62 and around the center of symmetry 5a. The main light-emitting surface of the light-emitting element 1 may not face the center of symmetry 5a of the carrier 5. The carrier 5 can be star-shaped or wheel-shaped. The carrier 5 can include at least two fins, and the bracket 62 can extend from one side of the fin. Thus, the plurality of semiconductor light-emitting elements 1 disposed on the holders 62 can be arranged more closely, and the light-emitting intensity of the light-emitting device 11 can be enhanced, which is one of the advantages of the present invention. The light-emitting device 11 of the embodiment may further comprise a candle-shaped lamp cover 7 for completely covering the semiconductor hair The optical element 1, the bracket 62 and the carrier 5 are provided. Taking the embodiment as an example, when the number of the semiconductor light-emitting elements 1 is three, the height of the lamp cover 7 can be equal to or close to 51.39 mm, and the bottom inner diameter of the lamp cover 7 can be equal to or close to 34.92 mm, the bracket 62 and the carrier 5 The pitch of the symmetrical center 5a may be between 2-3 mm, and the length of the bracket 62 may be between 5-15 mm. As described above, a preferred embodiment sets the first included angle θ1 to be equal to or nearly 80 degrees, and preferably sets the length of the bracket 62 equal to or close to 13.6 mm. As shown in the illuminance diagram of Fig. 37, the light distribution of the light-emitting device 11 of the preferred embodiment is more uniform than the foregoing embodiments of Figs. 33 and 34. The light emitted by each of the semiconductor light-emitting elements 1 of the present embodiment compensates for the shadow blocks, and the light is evenly distributed in all areas of the globe 7 without dark areas. The present invention further proposes another preferred embodiment that achieves the aforementioned illumination effect. The first angle θ1 is preferably set equal to or close to 80 degrees, and the length of the bracket 62 is preferably equal to or close to 15 mm, and the spacing between the bracket 62 and the center of symmetry 5a of the carrier 5 is preferably set equal to or close to 2 mm.

In one embodiment of the invention, the illumination device 11 can comprise at least two semiconductor light-emitting elements 1 arranged on the carrier 5, wherein the main illumination surface of the at least one semiconductor illumination element 1 does not face the center of symmetry of the carrier 5. . At least one of the plurality of semiconductor light emitting elements 1 of the light emitting device 11 may further include at least one main light emitting surface facing the center of symmetry of the carrier 5. As a result, the light output from the different semiconductor light-emitting elements 1 can be projected and passed through the surrounding lampshade 7, and compensates for the shadow of the light-emitting device 11 of the present invention when it is emitted. However, in other different application aspects, the at least two semiconductor light-emitting elements 1 can also be selectively arranged in a parallel manner or in a non-parallel manner.

In addition to the foregoing several embodiments, the present invention further proposes several other embodiments for illuminating the uniform illumination device 11. Please refer to Figures 38 to 40. Figures 38 and 39 are schematic views, respectively, of portions of different types of illumination devices 11 in accordance with an embodiment of the present invention. Figure 40 is a illuminance diagram of one of the light-emitting devices 11 of the preferred embodiment in the following detailed description. The light-emitting device 11 as shown in FIG. 25, FIG. 38 or FIG. 39 may include a first group bracket 62 and a second group bracket The carrier 5 of 62 and the semiconductor light emitting element 1 having the first group of light-emitting elements 1a and the second group of light-emitting elements 1b. The first group of light-emitting elements 1a and the second group of light-emitting elements 1b are respectively disposed in the first group bracket 62 and the second group bracket 62. The first group of brackets 62 and the second group of brackets 62 are staggered on the carrier 5. The number of first group of brackets 62 may be the same or different from the number of second group brackets 62. The carrier 5 can have a center of symmetry. As shown in FIG. 25 or FIG. 38, in an embodiment in which the light-emitting device 11 of the present invention can be uniformly emitted, the first angle θ1 between the first group of light-emitting elements 1a and the carrier 5 can be different from that of the second group. The first angle θ1 between the element 1b and the carrier 5. In another embodiment in which the light-emitting device 11 of the present invention can be uniformly emitted, the length of the first group of brackets 62 may be different from the length of the second group of brackets 62, as exemplified by FIG. 38 or FIG. 39, the first group. The holder 62 is higher than the second group holder 62 so that the height of the first group of light-emitting elements 1a can be different from the height of the second group of light-emitting elements 1b. In still another embodiment in which the illumination device 11 of the present invention can be uniformly emitted, the distance between the first group of brackets 62 and the center of symmetry may be different from the distance between the second group of brackets 62 and the center of symmetry, for example, as shown in FIG. As shown, the distance between the first group of brackets 62 and the center of symmetry may be greater than the distance between the second group of brackets 62 and the center of symmetry.

Taking one of the preferred embodiments of the present invention as an example, as shown in FIG. 38, when the number of the first group of light-emitting elements 1a and the second group of light-emitting elements 1b of the semiconductor light-emitting element 1 is the same and four, The diameter of the seat 5 can be between 21 and 25 mm, and the first angle θ1 between the first group of light-emitting elements 1a and the carrier 5 can be between 30 and 150 degrees, and the second group of light-emitting elements 1b and the carrier 5 The first angle θ1 may be between 30 and 150 degrees, the first group of brackets 62 may be between 10 and 20 millimeters, and the second group of brackets 62 may be between 12 and 17 millimeters. According to the foregoing, the preferred embodiment includes that the diameter of the carrier 5 is preferably the same or close to 21 mm, and the first angle θ1 between the first group of the light-emitting elements 1a and the carrier 5 is preferably the same as the first The first angle θ1 between the two groups of light-emitting elements 1b and the carrier 5, and the angle θ1 is equal to or close to 80 degrees, the length of the first group of brackets 62 is preferably equal to or close to 15 mm, and the length of the second group of brackets 62 is Canon is equal to or close to 12 mm.

According to one of the preferred embodiments, the light-emitting device 11 may further include a bulb-shaped lamp cover 7, as shown in FIG. The carrier 5 of the illumination device 11 can further include a central portion and an extension extending from the central portion. Different sets of brackets 62 may extend on one side of the central portion and one side of the extension, respectively. Taking another preferred embodiment shown in FIG. 39 as an example, when the number of the semiconductor light-emitting elements 1 of the first group and the second group is the same and equal to four, the outer diameter of the lamp cover 7 is equal to or close to 60 mm, and the lampshade The bottom inner diameter of 7 is equal to or close to 32 mm, and the first angle θ1 between the first group of light-emitting elements 1a and the carrier 5 may be between 30 and 150 degrees, in the second group of light-emitting elements 1b and the carrier 5 The first angle θ1 may be between 30 and 150 degrees, and the distance between the first group of brackets 62 and the center of symmetry of the carrier 5 may be between 10 and 13.5 millimeters, and between the center of the second group of brackets 62 and the center of the carrier 5 The distance between the first group of brackets 62 can be between 5 and 16 millimeters, and the length of the second group of brackets 62 can be between 5 and 20 millimeters. According to the foregoing, the preferred embodiment includes: the first angle θ1 between the first group of light-emitting elements 1a and the carrier 5 is preferably equal to or close to 80 degrees, and the second group of light-emitting elements 1b and the carrier The first angle θ1 between 5 is preferably equal to or close to 60 degrees, the length of the first group of brackets 62 is preferably equal to or close to 15.8 mm, and the length of the second group of brackets 62 is preferably equal to or close to 5.8. In millimeters, the distance between the first group of brackets 62 and the center of symmetry of the carrier 5 is preferably equal to or close to 12 millimeters, and the distance between the second group of brackets 62 and the center of symmetry of the carrier 5 is preferably equal to or close to 5 Millimeter. The illuminance diagram of the illuminating device 11 of the preferred embodiment is as shown in Fig. 40, and the shadow of the illuminating device 11 when it is illuminated is reduced, so that the illuminating device 11 emits light more uniformly.

In addition, the card type, the strip type or the stick type semiconductor light emitting element 1 can be disposed on the carrier 5 and can be formed into a V-shaped, U-shaped, triangular-shaped, and polygonal arrangement, as viewed from the plan view of the light-emitting device 11. The arrangement is applicable to all of the foregoing embodiments of the present invention. The invention can be applied to the fields of a bulb, a lamp tube, an advertising board and the like. The light-emitting diode chip of the invention has substantial economic benefits and practical value because of its advantages of better luminous effect, low power consumption and uniform light emission.

The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.

11‧‧‧Lighting device

1a‧‧‧First group of light-emitting elements

1b‧‧‧Second group of light-emitting elements

5‧‧‧ bearing seat

62‧‧‧ bracket

7‧‧‧shade

Claims (20)

A light-emitting device comprising: a carrier having a center of symmetry; and a plurality of semiconductor light-emitting elements disposed on the carrier and surrounding the center of symmetry; wherein at least one semiconductor light-emitting of the plurality of semiconductor light-emitting elements The component includes: a transparent substrate having a supporting surface and a second main surface disposed opposite to each other; and a light emitting diode structure disposed on the supporting surface and not provided with the light emitting diode structure At least a portion of the support surface forms a first main surface that is illuminable, and at least a portion of the light emitted by the LED structure can pass through the transparent substrate and be emitted by the second main surface. The light-emitting device of claim 1, wherein the carrier has a first angle with the at least one semiconductor light-emitting element of the plurality of semiconductor light-emitting elements, and the first angle may be between 30 and 150 degrees. The illuminating device of claim 1, wherein the carrier has a first angle between the carrier and the at least one semiconductor illuminating component of the plurality of semiconductor illuminating elements, and the first angle may be between 60 and 90 degrees. The illuminating device of claim 1, wherein the carrier has a first angle with the at least one semiconductor illuminating element of the plurality of semiconductor illuminating elements, and the first angle is equal to or nearly 60 degrees. The illuminating device of claim 1, wherein the carrier has a first angle with the at least one semiconductor illuminating component of the plurality of semiconductor illuminating elements, and the first angle is equal to or close to 80 degrees. The light-emitting device of claim 1, wherein the at least two semiconductor light-emitting elements of the plurality of semiconductor light-emitting elements are arranged in a non-parallel manner. The light-emitting device of claim 1, wherein the at least two semiconductor light-emitting elements of the plurality of semiconductor light-emitting elements are arranged in a parallel manner. The illuminating device of claim 1, wherein a main illuminating surface of the at least one semiconductor illuminating element of the plurality of semiconductor illuminating elements does not face the symmetry center. The illuminating device of claim 1, wherein the plurality of semiconductor illuminating elements comprise at least a first group of illuminating elements and a second group of illuminating elements, the distance between the first group of illuminating elements and the center of symmetry being different from the A distance between the second group of light-emitting elements and the center of symmetry. The illuminating device of claim 9, wherein the distance between the first group of illuminating elements and the center of symmetry may be between 10 and 13.5 mm. The illuminating device of claim 9, wherein the distance between the second group of illuminating elements and the center of symmetry may be between 2-13.5 mm. The illuminating device of claim 1, wherein the plurality of semiconductor illuminating elements comprise at least one first group of illuminating elements and a second group of illuminating elements, one of the first group of illuminating elements being different in height from the second group of illuminating elements One height. The illuminating device of claim 1, further comprising: a plurality of brackets disposed on the carrier and at least a portion of the plurality of semiconductor light emitting elements Between the conductor light-emitting elements. The illuminating device of claim 13, wherein the plurality of brackets have a length of between 5 and 20 mm. The illuminating device of claim 1, wherein the plurality of semiconductor illuminating elements comprise at least one first group of illuminating elements and a second group of illuminating elements, the first angle between the first group of illuminating elements and the carrier being different a first angle between the second group of light emitting elements and the carrier. The illuminating device of claim 9, wherein the first group of illuminating elements and the second group of illuminating elements are staggered in the carrier. The illuminating device of claim 12, wherein the first group of illuminating elements and the second group of illuminating elements are staggered in the carrier. The illuminating device of claim 15, wherein the first group of illuminating elements and the second group of illuminating elements are staggered in the carrier. The illuminating device of claim 1, wherein the carrier is in the shape of a star or a wheel. The illuminating device of claim 1, wherein the carrier base comprises a central portion and an extending portion extending from the central portion, and at least two semiconductor light emitting elements of the plurality of semiconductor light emitting elements are respectively disposed on The center portion and the extension portion.