TWI549167B - Input device - Google Patents

Description

Input device

The present invention relates to an input device capable of detecting an operation position of an operation surface, and more particularly to a configuration of a bridge wire connecting a transparent electrode formed on a surface of a transparent substrate.

Patent Document 1 discloses an input device in which a bridge wire (described in Patent Document 1 as an intersection portion and a relay electrode) for electrically connecting a plurality of transparent electrodes is formed by ITO (Indium Tin Oxide).

Further, Patent Document 2 discloses an input device in which a bridge wire (referred to as a bridge wire in Patent Document 2) in which a plurality of transparent electrodes are electrically connected is formed by Mo, Al, or Au.

Further, Patent Document 3 describes a bridge wire in which a plurality of layers of a metal layer or a plurality of metal layers including at least one metal layer are provided to electrically connect a plurality of transparent electrodes (Patent Document 3) It is described as a conductive member). As the material of the metal layer, gold, silver, copper, molybdenum or the like can be selected. Further, in Patent Document 3, since the metal oxide layer is formed on the viewing side, it is difficult to visually recognize the conductor film.

Further, in Patent Document 4, as an example of a bridge wire (referred to as a second light-transmitting conductive film in Patent Document 4) in which a plurality of transparent electrodes are electrically connected, an ITO layer, a silver-based metal layer, and ITO are described. A light-transmitting conductive film formed by laminating layers.

Further, an insulating layer is interposed between the transparent substrate constituting the formation surface of the transparent electrode and the bridge wiring. That is, the bridge wire passes through the surface of the insulating layer and will Each of the transparent electrodes is electrically connected.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1]: Japanese Patent Laid-Open Publication No. 2008-310550

[Patent Document 2]: Japanese Patent Laid-Open Publication No. 2010-271796

[Patent Document 3]: WO 2010/150668

[Patent Document 4]: Japanese Patent Laid-Open No. 2011-128674

In Patent Document 1, a bridge wire is formed of ITO, and there is a problem that the wiring resistance of the bridge wire becomes large.

Further, as in Patent Document 2, by forming a bridge wire using a metal material, the wiring resistance of the bridge wire can be made lower than that of ITO, but there is no good invisible property, that is, bridge wiring cannot be observed, and it is necessary to make the bridge wire resistant. Environmental (moisture resistance or heat resistance) is improved. Further, it is necessary to ensure good adhesion with the insulating layer constituting the formation surface of the bridge wiring.

Patent Document 3 describes that the invisibility of the bridge wiring can be improved. Further, Patent Document 4 describes that the sheet resistance of the bridge wiring can be lowered. Further, in Patent Documents 3 and 4, the bridge wiring is described as a laminated structure. However, the cross-sectional view or the like does not show how the layers from the surface of the insulating layer to the surface of the transparent electrode are formed.

In the invention described in Patent Documents 1 to 4, the bridge wiring is made of ITO or a metal layer, and the use of Cu, a Cu alloy, or an Ag alloy as a bridge wiring is used. gold In the case of a genus layer, it is possible to achieve good invisibility, adhesion to an insulating layer, environmental resistance (high temperature environment, high temperature, high humidity environment), and improvement of electrostatic breakdown resistance. The construction of the device is not described.

Accordingly, the present invention has been made to solve the above-mentioned problems, and an object thereof is particularly to provide a low-resistance metal using Cu, a Cu alloy or an Ag alloy, which can ensure good invisible characteristics and can improve the resistance of the bridge wiring. An input device that is environmentally or electrostatically resistant to damage.

The input device of the present invention is characterized by comprising: a transparent substrate; a plurality of transparent electrodes formed on the first surface of the transparent substrate; a bridge wire electrically connecting the transparent electrodes; and an insulating layer formed on the insulating layer The transparent substrate and the bridge wire; the transparent electrode includes a plurality of first transparent electrodes and a plurality of second transparent electrodes including ITO, wherein each of the first transparent electrodes is connected in the first direction, and the first transparent The insulating layer is formed on the surface of the connecting portion of the electrode, and the second transparent electrode is connected to the second direction intersecting the first direction by the bridge wire formed through the insulating surface of the insulating layer; the insulating layer The insulating layer is formed by filling a space between the connection portion of the first transparent electrode and the second transparent electrode and spreading to the surface of the second transparent electrode; and the bridge wire has a laminated structure. The laminated structure includes: a base layer from a surface of the insulating layer to a surface phase of the second transparent electrode Grounded and comprising amorphous ITO; a metal layer formed only on the surface of the base layer and comprising Cu, a Cu alloy or an Ag alloy; and a conductive oxide protective layer formed only on the surface of the metal layer and containing non Crystal ITO.

Thereby, it is possible to ensure good invisible characteristics, and it is possible to improve the resistance of the bridge wiring and improve the electrostatic breakdown resistance, and further improve the adhesion between the bridge wiring and the insulating layer. Further, the underlayer containing amorphous ITO functions as a barrier layer for moisture caused by the water absorbing property of the insulating layer containing the phenol resin. Further, the underlying layer containing amorphous ITO can appropriately follow the shrinkage of the insulating layer containing the phenol resin accompanying environmental changes. Further, the conductive oxide protective layer containing amorphous ITO can function as a barrier layer for moisture flowing in from the surface side of the bridge wiring. This also ensures good environmental resistance (moisture resistance, heat resistance).

Further, in the invention, it is preferable that the bridge wire has an ESD (Electrostatic Discharge) characteristic of 3.5 kV or more. Further, the sheet resistance value Rs of the bridge wire is preferably 55 Ω/□ or less.

Further, the film thickness of the metal layer is preferably 6 to 10 nm.

Further, in the invention, it is preferable that the bridge wiring is formed by laminating the underlying layer, the metal layer, and the conductive layer on a surface of each of the transparent electrodes, a surface of the insulating layer, and a surface of the transparent substrate. After the oxide protective layer, the surface of the insulating layer from the surface of the insulating layer to the surface of the second transparent electrode layer is left in a slender shape by photolithography.

Further, it is preferable to perform bleaching on the insulating layer.

Further, the present invention can be preferably applied to a configuration in which an optically transparent adhesive layer is connected to the surface of the bridge wiring. Also, it can be preferably applied to the above transparency The first surface side of the substrate and the surface of the operation panel are joined by the optically transparent adhesive layer.

In the present invention, the above metal layer containing a Cu alloy is preferably a CuNi layer. Further, the metal layer containing the Ag alloy is preferably an AgPdCu layer.

According to the input device of the present invention, it is possible to ensure good invisible characteristics, and it is possible to improve the resistance of the bridge wiring and the electrostatic breakdown resistance, and to improve the adhesion between the bridge wiring and the insulating layer. Further, the underlayer containing amorphous ITO functions as a barrier layer for moisture caused by the water absorbing property of the insulating layer containing the phenol resin. Further, the underlying layer containing amorphous ITO can appropriately follow the shrinkage of the insulating layer containing the phenol resin accompanying environmental changes. Further, the conductive oxide protective layer containing amorphous ITO can function as a barrier layer for moisture flowing in from the surface side of the bridge wiring. This also ensures good environmental resistance (moisture resistance, heat resistance).

1 is a plan view showing respective transparent electrodes and wiring portions formed on the surface of a transparent substrate constituting an input device (touch panel) of the present embodiment, and FIG. 2(a) is an input device shown in FIG. FIG. 2(b) is a partially enlarged longitudinal sectional view of the input device when FIG. 2(a) is cut along AA and viewed from the direction of the arrow, and FIG. 2(c) is partially different from FIG. 2(b). A partial enlarged longitudinal section of the input device.

In the specification, "transparent" and "translucent" mean a state in which the visible light transmittance is 50% or more (preferably 80% or more). Further, fog The degree value is preferably 6 or less.

Further, in Fig. 1, each of the transparent electrodes 4, 5 and the wiring portion 6 formed on the surface (first surface) 2a of the transparent substrate 2 constituting the input device 1 is illustrated, but actually as shown in Fig. 2 (b) In the same manner, the transparent panel 3 is provided on the surface side of the transparent substrate 2, and the decorative layer is present at the position of the wiring portion 6. Therefore, the wiring portion 6 cannot be observed from the surface side of the panel 3. Further, since the transparent electrode is transparent, it cannot be visually recognized, but the shape of the transparent electrode is shown in Fig. 1.

The transparent substrate 2 is formed of a film-form transparent substrate such as polyethylene terephthalate (PET) or a glass substrate. Further, each of the transparent electrodes 4 and 5 is formed of a transparent conductive material such as ITO (Indium Tin Oxide) and formed by sputtering or vapor deposition. The ITO here is crystalline ITO.

As shown in FIG. 1, a plurality of first transparent electrodes 4 and a plurality of second transparent electrodes 5 are formed in the display area 11 (a display screen on which the display can be operated by an operator such as a finger).

As shown in Fig. 1 and Fig. 2(a), a plurality of first transparent electrodes 4 are formed on the surface 2a of the transparent substrate 2, and each of the first transparent electrodes 4 is in the Y1-Y2 direction via the elongated connecting portion 7 (the 1 direction) link. Further, the first electrodes 8 including the plurality of first transparent electrodes 4 connected in the Y1-Y2 direction are arranged at intervals in the X1-X2 direction.

Further, as shown in FIGS. 1 and 2(a), a plurality of second transparent electrodes 5 are formed on the surface 2a of the transparent substrate 2. In this manner, the second transparent electrode 5 is formed on the same surface as the first transparent electrode 4 (the surface 2a of the transparent substrate 2). As shown in FIG. 1 and FIG. 2(a), each of the second transparent electrodes 5 is connected to the X1-X2 via the elongated bridge wiring 10. The direction (the second direction) is connected. Further, the second electrodes 12 including the plurality of second transparent electrodes 5 connected in the X1-X2 direction are arranged at intervals in the Y1-Y2 direction.

As shown in FIGS. 2(a) and 2(b), an insulating layer 20 is formed on the surface of the connecting portion 7 that connects the first transparent electrodes 4. As shown in FIG. 2(b), the insulating layer 20 fills the space between the connecting portion 7 and the second transparent electrode 5, and also slightly spreads to the surface of the second transparent electrode 5.

The insulating layer 20 is formed of a phenol resin. Thereby, the gap between the second transparent electrode 5 and the connection portion 7 can be appropriately filled. Moreover, the surface 20a of the insulating layer 20 can be formed smoothly, and the unevenness can be reduced.

Further, as shown in FIGS. 2(a) and 2(b), the bridge wiring 10 is formed from the surface 20a of the insulating layer 20 to the surface of each of the second transparent electrodes 5 located on both sides in the X1-X2 direction of the insulating layer 20. The bridge wiring 10 electrically connects the second transparent electrodes 5 to each other.

As shown in Fig. 2 (a) and (b), an insulating layer 20 is provided on the surface of the connecting portion 7 connecting the first transparent electrodes 4, and each of the second transparent layers 20 is provided on the surface of the insulating layer 20. The bridge wiring 10 is connected between the electrodes 5. In this manner, the insulating layer 20 is interposed between the connecting portion 7 and the bridge wiring 10, and the first transparent electrode 4 and the second transparent electrode 5 are electrically insulated from each other. Further, in the present embodiment, the first transparent electrode 4 and the second transparent electrode 5 can be formed on the same surface (the surface 2a of the transparent substrate 2), and the thickness of the input device 1 can be reduced.

Further, the connection portion 7, the insulating layer 20, and the bridge wiring 10 are all located in the display region 11, and are configured to be transparent and translucent similarly to the transparent electrodes 4 and 5.

As shown in FIG. 1, the periphery of the display area 11 is a frame-shaped decorative area (non-display area) 25. The display area 11 is transparent and translucent, but the decorative area Domain 25 is opaque and non-translucent. Therefore, the wiring portion 6 or the external connection portion 27 provided in the decorative region 25 cannot be observed from the surface of the input device 1 (the surface of the panel 3).

As shown in FIG. 1, a plurality of wiring portions 6 drawn from the respective first electrodes 8 and the respective second electrodes 12 are formed in the decorative region 25. Each of the wiring portions 6 is formed of a metal material such as Cu, a Cu alloy, a CuNi alloy, or Ni, Ag, or Au.

As shown in FIG. 1, the front end of each wiring portion 6 constitutes an external connection portion 27 that is electrically connected to a flexible printed circuit board (not shown).

As shown in FIG. 2(b), the surface 2a side of the transparent substrate 2 and the panel 3 are joined via an optical transparent adhesive layer (OCA) 30. The material of the panel 3 is not particularly limited, but a glass substrate or a plastic substrate is preferably used. The optical transparent adhesive layer (OCA) 30 is an acrylic adhesive or a double-sided adhesive tape.

In the capacitive input device 1 shown in FIG. 1, as shown in FIG. 2(b), when it comes into contact with the operation surface 3a of the panel 3, the finger F and the first transparent electrode 4 close to the finger F are placed. An electrostatic capacitance is generated between the second transparent electrode 5 and the second transparent electrode 5 . According to the change in electrostatic capacitance at this time, the contact position of the finger F can be calculated. The position of the finger F detects the X coordinate based on the change in electrostatic capacitance with the first electrode 8, and detects the Y coordinate (self capacitance detecting type) based on the change in electrostatic capacitance with the second electrode 12. Further, a driving voltage may be applied to one of the first electrodes of the first electrode 8 and the second electrode 12, and the electrostatic capacitance between the finger F may be detected by the other second electrode. The Y position is detected by the second electrode, and the mutual capacitance detection type of the X position is detected by the first electrode.

In the present embodiment, there is a characteristic portion in the structure of the bridge wiring 10 that connects the second transparent electrodes 5.

As shown in FIG. 3(a), the bridge wiring 10 of the first embodiment is formed in a laminated structure including a base layer 35 formed from the surface 20a of the insulating layer 20 to the surface 5a of the second transparent electrode 5 and The amorphous ITO is included; the metal layer 40 is formed only on the surface of the base layer 35; and the conductive oxide protective layer 37 is formed only on the surface of the metal layer 40 and contains amorphous ITO.

In the present embodiment, Cu, a Cu alloy or an Ag alloy may be selected as the metal layer 40.

A CuNi alloy can be selected from the Cu alloy. Further, an AgPdCu alloy may be selected from the Ag alloy. The composition ratio of the CuNi alloy is, for example, about 85 to 75 wt% of Cu and about 15 to 25 wt% of Ni, and the composition ratios of Cu and Ni are added to 100 wt%. Further, the composition ratio of the AgPdCu alloy is, for example, about 98 wt% of Ag, about 1 to 1.5 wt% of Pd, and about 0.5 to 1 wt% of Cu, and the composition ratios of Ag, Pd, and Cu are added to 100 wt%.

The reason why Cu, Cu alloy, and Ag alloy are selected is that the resistance can be reduced even if the film thickness of the invisible bridge wiring is formed, and the resistance change is small in heat resistance, moisture resistance, and environmental test. Maintain low resistance materials. Further, it is possible to reduce the material cost and achieve cost reduction.

According to the configuration of the bridge wiring 10 of the present embodiment, it is possible to ensure good invisible characteristics, and it is possible to improve the resistance of the bridge wiring 10 and the electrostatic breakdown resistance, and to improve the adhesion between the bridge wiring 10 and the insulating layer 20. Sex. Regarding invisibility, the bridge wiring 10 is formed into a base layer 35 containing a thin ITO/metal layer 40/a conductive oxide containing amorphous ITO The laminated structure of the protective layer 37 can suppress the reflectance of the bridge wiring 10, and as a result, the transmittance/reflectance ratio can be increased, and the invisible characteristics can be effectively improved. Further, the underlying layer 35 containing amorphous ITO functions as a barrier layer for moisture caused by the water absorbing property of the insulating layer 20 containing a phenol resin, and can appropriately follow the shrinkage of the insulating layer 20 which changes with respect to the environment. Further, the conductive oxide protective layer 37 containing amorphous ITO functions as a barrier layer for moisture. In this way, good environmental resistance (moisture resistance, heat resistance) can also be obtained.

Further, the underlying layer 35 containing amorphous ITO can increase the electrostatic breakdown voltage value (withstand voltage value), and can improve the electrostatic breakdown resistance.

In FIG. 3(a), the bridge wiring 10 is in contact with the optically transparent adhesive layer (OCA) 30, but the conductive oxide protective layer 37 of the bridge wiring 10 can be used as an optically transparent adhesive layer formed of an acrylic adhesive or the like. The barrier layer of moisture caused by the water absorption of the layer (OCA) 30 functions effectively.

Here, the maximum thickness of the insulating layer 20 is about 0.5 to 4 μm, the thickness of the underlying layer 35 is about 5 to 40 nm, and the thickness of the metal layer 40 is about 6 to 10 nm, and the transparent conductive oxide protective layer is The film thickness of 37 is about 5~40 nm. Further, the width dimension of the bridge wiring (the length dimension in the Y1-Y2 direction) is about 5 to 50 μm, and the length dimension (the length dimension in the X1-X2 direction) is about 150 to 500 μm.

In the present embodiment, even if the metal layer 40 containing Cu, Cu alloy or Ag alloy having a sufficiently low resistivity of amorphous ITO is thinned and formed into a fine width, bridging is formed with a single layer film of amorphous ITO. In comparison with the case of wiring, the bridge wiring 10 can be made low in resistance, and in the present embodiment In the meantime, by making the film thickness of the metal layer 40 thin and making the width dimension small, the invisible characteristics can be improved.

Further, in the present embodiment, ITO (crystalline ITO) is used for the underlying layer 35 containing amorphous ITO and each of the transparent electrodes 4 and 5. In this case, the underlayer 35 is in contact with the surface of the second transparent electrode 5, and the metal layer 40 is not in contact with the surface of the second transparent electrode 5. Thereby, the adhesion between the bridge wire 10 and the insulating layer 20 containing the phenol resin can be sufficiently ensured, and further, environmental resistance (high temperature environment, high temperature, high humidity environment) and electrostatic breakdown resistance can be improved. The low electrical resistance of the metal layer 40 can be utilized.

Fig. 3(b) is a reference example, and unlike the Fig. 3(a), the bridge wiring 10 is formed in a two-layer structure.

That is, in FIG. 3(b), a laminated structure of the CuNi layer 34 and the conductive oxide protective layer 37 is formed.

As shown in FIG. 3(b), the CuNi layer 34 is formed from the surface of the insulating layer 20 containing the phenol resin to the surface 5a of the second transparent electrode 5, and the conductive oxide protective layer 37 is formed only on the surface of the CuNi layer 34.

Also in this embodiment, it is possible to ensure good invisible characteristics and to achieve low resistance, and further, the conductive oxide protective layer 37 can function as a barrier layer for moisture, thereby improving the environmental resistance of the bridge wiring 10 ( Moisture resistance, heat resistance). Further, good adhesion between the CuNi layer 34 and the insulating layer 20 can be ensured.

In the present embodiment, it is preferable that the conductive oxide protective layer 37 is ITO (preferably amorphous ITO) having high transparency. Thereby, environmental resistance can be improved more effectively. In addition, as a material of the transparent conductive oxide protective layer, ZnO, In ₂ O ₃ or the like is used.

Further, by forming a CuNi layer 34 and a conductive oxide protective layer 37 (preferably ITO) as a single layer structure, the reflectance of the bridge wiring 10 can be suppressed. As a result, the ratio of transmittance/reflectance can be increased, so that the invisible characteristics can be effectively improved. Moreover, by forming the laminated structure described above, it is possible to further reduce the resistance.

Further, in the present embodiment, as shown in Fig. 2(b), the transparent electrodes 4, 5, the insulating layer 20, and the bridge wiring 10 are provided on the surface 2a side of the transparent substrate 2, but as shown in Fig. 2 (c) In addition, each of the transparent electrodes 4 and 5, the insulating layer 20, and the bridge wiring 10 may be provided on the back surface 2b (first surface) side of the transparent substrate 2. In FIG. 2(c), an optically transparent adhesive layer (OCA) 28 as a bonding material between the back surface 2b of the transparent substrate 2 and the other transparent substrate 26 is in contact with the bridge wiring 10.

Further, the connecting portion 7 that connects the first transparent electrodes 4 is formed of ITO. In other words, each of the first transparent electrodes 4 and the connecting portion 7 can be integrally formed.

Fig. 4 is a view showing the steps of a method of manufacturing the input device 1 in the embodiment. The left side of Fig. 4 is a partial longitudinal sectional view, and the right drawing is a top view. Furthermore, in the left and right figures, the size ratio is different. The partial longitudinal cross-sectional view shown in Fig. 4 is cut along the X1-X2 direction in the same manner as the partial longitudinal cross-sectional view shown in Fig. 2(b). Further, a portion of the transparent electrodes 4, 5 is illustrated in FIG.

In the step of Fig. 4 (a), transparent electrodes 4, 5 containing ITO are formed on the surface 2a of the transparent substrate 2. At this time, the connection portion 7 connecting the first transparent electrodes 4 and 4 and the first transparent electrode 4 are integrally formed of ITO.

Next, in the step of FIG. 4(b), an insulating layer containing a phenol resin is formed. 20. The insulating layer 20 covers the connecting portion 7 and is filled between the second transparent electrodes 5 located on both sides in the X1-X2 direction of the connecting portion 7. At this time, it is preferable to whiten the insulating layer 20 by the entire surface exposure.

Next, in the step of FIG. 4(c), a bridge wiring 10 having a three-layer structure is formed on the surface of each of the transparent electrodes 4, 5, the surface of the insulating layer 20, and the surface of the transparent substrate 2, and the three-layer structure is included The base layer 35 of amorphous ITO/metal layer 40 containing Cu, Cu alloy or Ag alloy/conductive oxide protective layer 37 containing amorphous ITO. Alternatively, the bridge wiring 10 may be formed in a two-layer structure of the CuNi layer 34/the conductive oxide protective layer 37 containing amorphous ITO. At this time, an amorphous ITO or a metal layer can be formed by sputtering or vapor deposition.

Further, in FIG. 4(d), the bridge wiring 10 is applied from the surface of the insulating layer 20 containing the phenol resin to the surface of the second transparent electrode 4 located on both sides of the insulating layer 20 by the photolithography technique or the like. - The shape of the slender shape in the X2 direction remains. Further, at this time, it is preferable to perform selective etching so that the surfaces of the transparent electrodes 4 and 5 are not removed. Thereby, the second transparent electrodes 5 and 5 can be electrically connected via the bridge wiring 10 .

Then, as shown in FIG. 2(b), the surface 2a side of the transparent substrate 2 and the panel 3 whose surface is the operation surface 3a are joined via the optical transparent adhesive layer 30.

The input device in this embodiment can be used for a mobile phone, a digital camera, a PDA (Personal Digital Assistant), a game machine, a car navigation, and the like.

[Examples]

In the experiment, a transparent electrode (ITO), an insulating layer (phenolic resin), and a bridge wiring having the structure shown in Fig. 2 were formed on a transparent substrate. Will link the second through The bridge wiring between the electrodes is formed into a three-layer structure of amorphous ITO (base layer) / Cu (metal layer) / amorphous ITO (conductive oxide protective layer) of Example 1 shown in Table 1 below. Three-layer structure of amorphous ITO (base layer) / CuNi (metal layer) / amorphous ITO (conductive oxide protective layer) shown in Example 2, amorphous ITO (base layer) / AgPdCu (metal layer) / non Three-layer structure of crystalline ITO (conductive oxide protective layer), two-layer structure of CuNi/amorphous ITO (conductive oxide protective layer), CuNi single layer of Comparative Example 1, and ITO of Comparative Example 2 to Comparative Example 4 Single layer film.

In Table 1, the film thickness of each layer, the width dimension of the bridge wiring (the length in the Y1-Y2 direction shown in Fig. 2(a)), and the length dimension of the bridge wiring (X1- shown in Fig. 2(a)) are shown. Length in the X2 direction). In addition, the transmittance and the reflectance shown in Table 1 were measured in a state (integral film state) formed integrally on the surface of the substrate before being processed into the shape of the bridge wire.

The invisible grades shown in Table 1 are based on the ITO monolayer film of Comparative Example 2. quasi. Further, in Comparative Example 2, a bridge wiring including amorphous ITO was observed. ○ When the tilt is 10% or less of the total number of bridged wirings, ◎ is the state in which the bridge wiring cannot be observed even if it is tilted.

In addition, the sheet resistance value Rs of the bridge wiring is set to be × 60 Ω/□, and 60 Ω/□ or less.

In addition, regarding the resistance change in the environmental test in which the temperature is set to 85 ° C and the humidity is 85% RH as an acceleration test, the rate of change is ±100% or more or the occurrence of disconnection is ×, and the rate of change is ± The case where 30% or more and less than ±100% is set to Δ, and the case where the rate of change is less than ±30% is ○.

Further, the adhesion in the environmental test in a dry atmosphere at 85 ° C was × in the case of a broken wire, and ○ in the case of no wire breakage.

In the ESD (Electro-Static Discharge) test (electrostatic breakdown voltage test), 1 kV or more and 2 kV or less are set to Δ, and more than 2 kV and less than 4 kV are set to ○, and 4 kV or more is set to ◎. .

As shown in Table 1, in Comparative Example 1, a high resistance rise was observed in an environmental test in which the temperature was set to 85 ° C and the humidity was set to 85%, and the ESD characteristic (electrostatic breakdown voltage) was as low as 1.5 kV. the following.

Further, in Comparative Example 2, the invisibility was inferior, and further, an environmental test and an ESD characteristic (electrostatic breakdown voltage) having a temperature of 85 ° C and a humidity of 85% were not able to obtain good results.

Further, in Comparative Example 3 and Comparative Example 4, the sheet resistance was extremely high, and good results were not obtained with respect to the ESD characteristics (electrostatic breakdown voltage).

In Comparative Example 1 to Comparative Example 4 shown in Table 1, the invisible property, the sheet resistance value Rs, and one of the environmental tests were ×, and thus the overall evaluation was also ×.

On the other hand, in Examples 1 to 3, any of the sheet resistance value Rs, the invisible property, and the environmental test were all ○ or more. Further, in Examples 1 to 3, good ESD characteristics (electrostatic breakdown voltage) can be obtained.

Further, as in the case of the reference example, by forming the bridge wiring as CuNi/amorphous ITO, the reflectance can be suppressed as compared with the formation of the CuNi single layer (Comparative Example 1), and as a result, the transmittance/reflectance ratio can be increased. So that good invisible properties can be obtained. Moreover, the reduction in resistance of the bridge wiring can be achieved.

However, as shown in Table 1, the reference examples were not evaluated as in the comparative example, but the results were slightly inferior to those in Examples 1 to 3.

According to the experimental results in Table 1, the bridge wires were formed into amorphous ITO/metal layers (Cu, Cu alloy or Ag alloy)/amorphous ITO in Examples 1 to 3 in sheet resistance Rs, invisible characteristics, environmental test and Good results were obtained in any of the ESD characteristics (electrostatic breakdown voltage), and thus the overall evaluation was ○ or ◎.

Here, in the embodiment 1 in which the metal layer of the bridge wiring is formed of Cu and the embodiment 2 in which the metal layer is formed of a CuNi alloy or the embodiment 3 in which the AgPdCu alloy is formed, the reflectance is low, even if the film thickness of the metal layer is made. Thickening can also achieve higher invisibility, which is advantageous for the improvement of electrostatic breakdown resistance.

1‧‧‧Input device

2‧‧‧Transparent substrate

2a‧‧‧Surface of transparent substrate

2b‧‧‧Back of transparent substrate

3‧‧‧ panel

3a‧‧‧Operation surface

4‧‧‧1st transparent electrode

5‧‧‧2nd transparent electrode

5a‧‧‧ Surface of the second transparent electrode

6‧‧‧Wiring Department

7‧‧‧Connecting Department

8‧‧‧1st electrode

10‧‧‧Bridge wiring

11‧‧‧Display area

12‧‧‧2nd electrode 12

20‧‧‧Insulation

20a‧‧‧The surface of the insulation

25‧‧‧Plus area

26‧‧‧Other transparent substrates

27‧‧‧External connection

28‧‧‧Optical transparent adhesive layer

30‧‧‧Optical Clear Adhesive Layer (OCA)

34‧‧‧CuNi layer

35‧‧‧ basal layer

37‧‧‧ Conductive oxide protective layer

40‧‧‧metal layer

F‧‧‧ finger

X1‧‧‧ direction

X2‧‧‧ direction

Y1‧‧‧ direction

Y2‧‧‧ direction

Fig. 1 is a plan view showing respective transparent electrodes and wiring portions formed on the surface of a transparent substrate constituting an input device (touch panel) of the present embodiment.

Fig. 2(a) is an enlarged plan view of the input device shown in Fig. 1, and Fig. 2(b) is a portion of the input device when the Fig. 2(a) is cut along A-A and viewed from the direction of the arrow. The enlarged longitudinal sectional view is shown in Fig. 2(c) as a partially enlarged longitudinal sectional view of the input device which is partially different from Fig. 2(b).

Fig. 3 (a) is an enlarged longitudinal sectional view showing a bridge wire in the first embodiment, and Fig. 3 (b) is an enlarged longitudinal sectional view showing a bridge wire in a reference example.

4(a) to 4(d) are diagrams showing the steps of the method of manufacturing the input device in the present embodiment, and the right side view of Fig. 4 is a partial longitudinal sectional view, and the left side view of Fig. 4 is a plan view.

1‧‧‧Input device

5‧‧‧2nd transparent electrode

5a‧‧‧ Surface of the second transparent electrode

7‧‧‧Connecting Department

10‧‧‧Bridge wiring

20‧‧‧Insulation

20a‧‧‧The surface of the insulation

30‧‧‧Optical Clear Adhesive Layer (OCA)

34‧‧‧CuNi layer

35‧‧‧ basal layer

37‧‧‧ Conductive oxide protective layer

40‧‧‧metal layer

Claims (11)

An input device comprising: a transparent substrate; a plurality of transparent electrodes formed on a first surface of the transparent substrate; a bridge wire electrically connecting the transparent electrodes; and an insulating layer formed on the a transparent substrate and the bridge wire; the transparent electrode includes a plurality of first transparent electrodes and a plurality of second transparent electrodes including ITO, wherein each of the first transparent electrodes is connected in the first direction, and the first transparent electrode is The insulating layer is formed on the surface of the connecting portion, and the second transparent electrode is connected in a second direction crossing the first direction by the bridge wire formed through the insulating surface of the insulating layer; the insulating layer is made of phenolic a resin is formed; the insulating layer fills a space between the connecting portion of the first transparent electrode and the second transparent electrode, and spreads over the surface of the second transparent electrode; and the bridged wiring has a laminated structure including a base layer formed by grounding from a surface of the insulating layer to a surface of the second transparent electrode and comprising amorphous ITO; a metal layer, which is formed only The surface of the underlying layer is not in contact with the second transparent electrode, and includes Cu, a Cu alloy, or an Ag alloy; and a conductive oxide protective layer formed only on the surface of the metal layer and containing amorphous ITO, and Only the base layer is in contact with the surface of the second transparent electrode. The input device of claim 1, wherein the bridge wiring has an ESD characteristic of 3.5 kV or more. The input device of claim 1 or 2, wherein the bridge wiring has a sheet resistance value Rs of 55 Ω/□ or less. The input device of claim 1 or 2, wherein the metal layer has a film thickness of 6 to 10 nm. An input device according to claim 1 or 2, wherein said bridge wiring is formed by laminating said base layer, said metal layer and said conductive oxide on a surface of said transparent electrode, a surface of said insulating layer, and a surface of said transparent substrate After the protective layer is formed, the surface of the insulating layer is left to have a slender shape from the surface of the insulating layer by photolithography. The input device of claim 1 or 2, wherein the insulating layer is subjected to bleaching. The input device of claim 5, wherein the insulating layer is whitened. The input device of claim 1 or 2, wherein the surface of the bridge wire is connected to an optically transparent adhesive layer. The input device according to claim 8, wherein the first surface side of the transparent substrate and the panel whose surface is the operation surface are joined by the optically transparent adhesive layer. The input device of claim 1 or 2, wherein the metal layer containing the Cu alloy is a CuNi layer. The input device of claim 1 or 2, wherein the metal layer containing the Ag alloy is an AgPdCu layer.