TWI437617B - Electrostatic chuck and apparatus for processing a substrate including the same - Google Patents

Description

Electrostatic chuck and substrate processing device thereof

Embodiments of the present invention relate to an electrostatic chuck and a substrate processing apparatus thereof, and more particularly to an electrostatic chuck and a substrate processing apparatus for fixing a substrate of an integrated circuit device such as a wafer and a glass plate by electrostatic force.

In general, integrated circuit devices are fabricated on substrates, such as wafers and glass plates, through various unit processes. The unit process is, for example, a deposition process, an etching process, a photolithography process, and an ion implantation process. For example, integrated circuit devices include semiconductor memory devices and drive circuits for flat panel display devices.

The above unit process is usually performed on a device for processing a substrate (hereinafter referred to as a processing device). The processing device comprises: a processing cavity, providing an internal space for the process of each unit; a source supply for supplying the source gas of each unit process to the processing cavity; and an electrostatic chuck located in the processing cavity, To fix the substrate during the execution of the unit process. For example, the etching process is typically performed in an etching apparatus, and the etching apparatus generally includes a processing chamber, a gas supply connected to the processing chamber and supplying an etching gas to the processing chamber, and a fixing to be etched by the etching process. Electrostatic chuck of the substrate.

The electrostatic chuck conventionally includes an electrostatic portion having an electrostatic electrode for generating an electrostatic force and a heating portion having a heating electrode and located below the electrostatic portion. The substrate is located above the electrostatic portion and is heated by the heating portion. In the heating portion, thermal energy is generated by the heating electrode.

The heating electrode is formed in a spiral shape or a repeating-and-recess shape, that is, an uneven shape. The heating electrode is uniformly disposed in the heating portion. The heating electrode has high electrical conductivity as well as thermal conductivity, and thus can efficiently generate thermal energy.

The adjacent heating electrodes need to be insulated from each other in the heating portion, so that the heating portion needs to have an electrical insulator function between adjacent heating electrodes. Therefore, the heating portion has high electrical resistance and low heat conduction.

For the above reasons, the heat energy generated in the heating portion is hardly conducted to the substrate on the electrostatic portion, and thus the substrate is difficult to be uniformly heated on the conventional electrostatic chuck.

Embodiments provide an electrostatic chuck for securing and uniformly heating a substrate.

Other embodiments provide a processing apparatus for a substrate using an electrostatic chuck.

According to some embodiments, an electrostatic chuck including an electrostatic portion is provided for fixing a substrate to an electrostatic portion above the electrostatic portion by electrostatic force, the electrostatic portion having an electrostatic electrode to generate the electrostatic force, and the electrostatic portion having a The first heat transfer coefficient electrostatic portion. The electrostatic chuck also includes a heating portion located below the electrostatic portion for heating the substrate, the heating portion having a heating electrode to generate thermal energy, and the heating portion having a second heat transfer coefficient greater than the first heat transfer coefficient.

In some embodiments, the composition of the heating portion includes a ceramic having one of aluminum nitride (AlN), magnesium oxide (MgO), yttrium oxide (Y2O3), and a combination thereof. The second heat transfer coefficient ranges from 150 W/(mK) to 250 W/(mK).

In some embodiments, the heating portion and the heating electrode have the same thickness, and the side surface of the heating electrode is covered with the heating portion. For example, the thickness of the electrostatic portion is between 1 mm and 5 mm.

In some embodiments, the electrostatic chuck further includes an insulating portion, the insulating portion is located under the heating portion, the insulating portion has a third heat transfer coefficient, and the third heat transfer coefficient is smaller than the first heat transfer coefficient. For example, the thickness of the insulating portion is between 0.05 mm and 0.5 mm.

In some embodiments, the upper surface of the heating portion is in contact with the lower surface of the electrostatic portion, and the upper surface of the insulating portion is in contact with the lower surface of the heating portion.

In accordance with some embodiments, an apparatus for processing a substrate and including a processing chamber is provided, the substrate being machined within the processing chamber. The apparatus also includes a gas supply coupled to the processing chamber for supplying gas to the processing chamber to process the substrate. The device also includes an electrostatic chuck located in the processing chamber for securing the substrate. The electrostatic chuck includes an electrostatic portion for fixing the substrate to the electrostatic portion by electrostatic force, the electrostatic portion has an electrostatic electrode to generate an electrostatic force, and the electrostatic portion has a first heat transfer coefficient. The electrostatic chuck also includes a heating portion under the electrostatic portion for heating the substrate, the heating portion having a heating electrode to generate thermal energy, and the heating portion having a second heat transfer coefficient greater than the first heat transfer coefficient.

In an embodiment, the heating portion and the heating electrode have the same thickness, and the side surface of the heating electrode is covered with the heating portion.

In one embodiment, the electrostatic chuck further includes an insulating portion, the insulating portion is located under the heating portion, the insulating portion has a third heat transfer coefficient, and the third heat transfer coefficient is smaller than the first heat transfer coefficient, and the upper surface of the heating portion and the electrostatic portion The lower surface is in contact, and the lower surface of the heating portion is in contact with the upper surface of the insulating portion.

According to some embodiments of the steps of the present invention, the electrostatic chuck may include an electrostatic portion, the substrate being located above the electrostatic portion, and the heating portion being located below the electrostatic portion. The heating portion has a second heat transfer coefficient and may include a heating electrode to generate thermal energy. The electrostatic portion has a first heat transfer coefficient and may include an electrostatic electrode to generate an electrostatic force. The electrostatic chuck can be constructed using a configuration such that the second heat transfer coefficient can be greater than the first heat transfer coefficient, and thus the thermal energy generated from the heated electrode can be first uniformly conducted to the heating portion, and then the thermal energy can be thermally changed due to the difference in heat transfer coefficient. It is conducted from the heating portion to the electrostatic portion. Finally, the thermal energy can be uniformly conducted from the electrostatic portion to the substrate, thereby uniformly heating the substrate.

Accordingly, the substrate can be uniformly processed by the processing gas in the processing chamber, thereby minimizing processing defects on the substrate in the processing chamber, and improving the device quality of the integrated circuit device fabricated in the processing device. .

In order to provide a better understanding of the above and other aspects of the present invention, the preferred embodiments of the present invention are described in detail below.

Various embodiments will be described more fully hereinafter with reference to the accompanying drawings in which FIG. While the invention has been described above in terms of several preferred embodiments, the invention is not intended to be limiting of the invention, but rather, these embodiments are used to make the disclosure of the present invention more thorough and complete. Within the spirit and scope of the present invention, various changes and retouchings can be made. In the drawings, the size and relative sizes of layers and regions will be exaggerated for clarity.

When an element or layer is referred to as being "above" or "connected" or "coupled" to another element or layer, it can mean that it is directly on the other element or layer, or directly connected or coupled. The other elements or layers may be connected to other elements or layers, or may be connected or coupled to other intervening elements or layers. Conversely, when an element or layer is referred to as being "directly on" or "directly connected" or "directly connected" or "directly connected" to another element or layer, The appearance of the layer. Like numbers refer to like elements throughout. As used herein, the term "and/or" includes any and all combinations of the items listed above.

Although the terms "first," "second," and "third" are used herein to describe various elements, components, regions, layers and/or components, these elements, components, regions, layers and/or components are Not limited to these words. These terms are only used to distinguish one element, component, region, layer or component to the other elements, components, regions, layers or components. Thus, the first element, component, region, layer or component discussed below may also be referred to as a second element, component, region, layer or component.

Spatial relationship terms, such as "under", "lower", "above", "higher" and similar terms, can be easily described in the figure. The relationship of a component or feature to other components or features. These spatial relationship terms are used to encompass different orientations of the device or function being used in addition to the orientation depicted in the Figures. For example, elements in the "a" or "an" or "an" Therefore, the words "under" in this example can cover the direction of "below" and "above". The device can be reversed (rotated 90 degrees or other turns) and the spatial relationship description terms used herein are also translated.

The terminology used herein is for the purpose of describing the particular embodiments As used herein, the singular forms "a" and "the" are also used to include the plural, unless the context clearly recites. It will be further understood that when the words "including" and / or "comprising" are used in the specification, they are used to designate the appearance of the features, integers, steps, directions, components and/or components, but not The appearance or addition of more than one of the other features, integers, steps, directions, components, compositions and/or groups thereof is excluded.

The embodiments described herein in conjunction with the cross-sectional views are illustrative examples (and intermediate architectures) of the idealized embodiments. Therefore, variations in the shapes in the drawings are expected because, for example, manufacturing techniques and/or tolerances. Therefore, the embodiments should not be used to limit the particular shapes of the regions depicted herein, but rather to include variations in the shape resulting from, for example, manufacturing. For example, an implanted region depicted as a rectangle has substantially circular or curved features and/or its edges may have a gradient implant concentration rather than directly transitioning from implanted to non-invasive regions. Binary changes in the implanted area. Likewise, a buried region formed by implantation will cause some implantation in the region between the buried region and the surface on which the implantation is performed. Therefore, the regions illustrated in the figures are illustrative and are not intended to represent the true shape of the region of the device and are not intended to limit the scope of the invention.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning meaning meaning It should be further understood that these words, such as those defined in the commonly used dictionary, should be interpreted as having a meaning consistent with the relevant technical literature and should not be interpreted as idealized or overly formal. Meaning, unless explicitly defined as such.

Hereinafter, each embodiment will be explained in detail with reference to the drawings.

1 is a cross-sectional view showing an electrostatic chuck corresponding to an exemplary embodiment of the present invention. Fig. 2 is a cross-sectional view showing the electrostatic portion, the heating portion, and the insulating portion of the electrostatic chuck shown in Fig. 1 in detail.

Referring to FIGS. 1 and 2, an electrostatic chuck 100 corresponding to an exemplary embodiment of the present invention may include an electrostatic portion 200, a heating portion 300, an insulating portion 400, and a body 500.

The electrostatic portion 200 can support the substrate 10, and thus the substrate 10 can be located above the electrostatic portion 200. For example, substrate 10 can include a wafer for fabricating a semiconductor memory device and a glass plate for fabricating a flat panel display device.

The electrostatic electrode 210 may be mounted in the electrostatic portion 200, and an electrostatic force for fixing the substrate to the electrostatic chuck 100 may be generated by the electrostatic electrode 210. In an embodiment, the electrostatic electrode 210 may include a wide plate electrode mounted in the electrostatic portion 200. The electrostatic electrode 210 may include tungsten (W) or molybdenum (Mo) having a relatively low thermal elongation.

The electrostatic portion 200 may include an insulating ceramic having aluminum oxide (Al ₂ O ₃ ) or yttrium oxide (Y ₂ O ₃ ). For example, the electrostatic unit 200 can include about 90% to about 96% alumina, the remainder being magnesium oxide (MgO) or silicon oxide (SiO _2). In addition, the electrostatic portion 200 may include about 90% or more of yttrium oxide (Y2O3), and the rest is alumina.

In such a case, the electrostatic portion 200 may have a volume resistance of about 10 ¹⁴ Ω cm to about 10 ¹⁶ Ω cm , and thus may have sufficiently high insulation properties. Further, the electrostatic portion 200 may have a first heat transfer coefficient of about 10 W/(mK) to about 30 W/(mK).

The heating portion 300 may be located above the electrostatic portion 200 and may include a heating electrode 310 to generate thermal energy. The substrate 10 is heated by heat energy generated from the heating electrode 310.

For example, the heating electrode 310 may be formed in a spiral shape, a repeated uneven shape, or an uneven shape, and is uniformly disposed in the heating portion 300. The heating electrode 310 can have a thickness of from about 0.005 mm to about 0.3 mm, a width of from about 0.5 mm to about 10 mm, and a length of from about 3 m to about 30 m. In some embodiments, the heating electrode 310 can have an electrical impedance of from about 1 Ω to about 100 Ω, and the substrate can be heated to between about 0 ° C and 100 ° C.

In the present embodiment, the heating electrode 310 may be formed as a metal paste, which may include silver (Ag), gold (Au), nickel (Ni), tungsten, molybdenum, titanium (Ti), and combinations thereof. Alternatively, the heating electrode 310 may be formed by using a metal powder, which may include tungsten, molybdenum, titanium, and combinations thereof. Alternatively, the heating electrode 310 may be formed as a metal thin film, which may include gold, nickel, titanium, titanium nitride (TiN), and combinations thereof.

The heating portion 300 may cover a side surface of the heating electrode 310. In some embodiments, the heating portion 300 may have the same thickness t1 as the heating electrode 310, and thus the side surface of the heating electrode 310 may be completely covered by the heating portion 300. In the present embodiment, the upper surface of the heating portion 300 may be coplanar with the upper surface of the heating electrode 310, and the lower surface of the heating portion 300 may be coplanar with the lower surface of the heating electrode 310. Therefore, the upper surface of the heating portion 300 and the heating electrode 310 can be in contact with the electrostatic portion 200, and the lower surface of the heating portion 300 and the heating electrode 310 can be in contact with the insulating portion 400.

The structure of the heating portion 300 that can cover the side surface of the heating electrode 310 can enhance the thermal conductivity of the heating portion 300, and thus the heating portion 300 can also function as another heating electrode. That is, the heating portion 300 covering the side surface of the heating electrode 310 can increase the area of the heat source including the heating electrode 310.

In some embodiments, the thickness t1 of the heating portion 300 may be greater than the thickness of the heating electrode 310. When the thickness t1 of the heating portion 300 is about 1.5 times that of the heating electrode 310, the heat energy generated from the heating electrode 310 is conducted to the substrate 10 with poor efficiency. In this case, thermal energy may need to be generated to exceed the thermal capacitance of the heating electrode to heat the substrate 10 to a processing temperature of about 0 ° C to 100 ° C, and thus the heating electrode 310 may be caused by excessive thermal stress. Tired and broken. For these reasons, the thickness of the heating portion 300 may be less than about 1.5 times the thickness of the heating electrode 310.

The heating portion 300 may include an insulating ceramic and may be formed in a spiral shape, a repeated uneven shape, or an uneven shape. Therefore, adjacent heating electrodes can be insulated from each other by the heating portion 300. Further, the heating portion 300 may have a second heat transfer coefficient greater than the first heat transfer coefficient, and the second heat transfer coefficient may range from about 10 W/(mK) to 30 W/(mK).

When the second heat transfer coefficient is less than about 150 W/(mK), the heat energy generated from the heating electrode 310 is transmitted to the substrate 10 through the heating portion 300 and the electrostatic portion 200 very slowly, so that processing of the substrate 10 takes a long time. time. In contrast, when the second heat transfer coefficient is greater than about 250 W/(mK), heat energy generated from the heating electrode 310 is transmitted to the substrate 10 through the heating portion 300 and the electrostatic portion 200 at a sufficiently fast speed. However, the difference between the first and second heat transfer coefficients of the electrostatic portion 200 and the heating portion 300 may cause the temperature of the electrostatic portion 200 and the heating portion 300 to differ as the processing progresses, resulting in thermal stress or thermal shock. It will be concentrated to the electrostatic portion 200. Thus, as the electrostatic chuck 100 is repeatedly processed, the electrostatic portion 200 may be fatigued and broken due to repeated thermal stress.

Accordingly, the second heat transfer coefficient ranges from about 150 W/(mK) to 250 W/(mK) so that thermal energy generated from the heating electrode 310 can be uniformly conducted to the substrate 10 through the heating portion 300.

For example, based on the achievement of sufficient thermal conductivity, the heating portion 300 may include about 90% aluminum nitride, with the balance being magnesium oxide or cerium oxide.

In this embodiment, the heating portion 300 can be formed into a ceramic bulk, a ceramic paste, and a ceramic thin layer relatively through a bonding process, a paste printing process, and a deposition process. The heating portion 300 has a volume resistance similar to that of the electrostatic portion 200, and is about 10 ⁸ Ωcm to 10 ¹⁶ Ωcm.

Therefore, the heating portion 300 having the heating electrode 310 and the electrostatic portion 200 having the electrostatic electrode 210 may be disposed in such a manner that the heating portion 300 having the second heat transfer coefficient is located below the electrostatic portion 200 having the first heat transfer coefficient, and the second The heat transfer coefficient is greater than the first heat transfer coefficient. Therefore, the thermal energy generated from the heating electrode 310 is first uniformly conducted to the heating portion 300, and then the thermal energy is again conducted from the heating portion 300 to the electrostatic portion 200 due to the difference in thermal conductivity. Finally, thermal energy is uniformly conducted from the electrostatic portion 200 to the substrate 10.

When the thickness t2 of the electrostatic portion 200 is less than 1 mm, heat energy is hardly uniformly conducted from the electrostatic portion 200 to the substrate, and when t2 is larger than 5 mm, the heat transfer efficiency is greatly lowered, so that it takes a longer time to heat the substrate to the processing temperature. time. Therefore, the electrostatic portion 200 may have a thickness of about 1 mm to 5 mm.

The insulating portion 400 may be positioned below the heating portion 300 and prevent heat energy generated from the heating electrode 310 from being conducted downward to the body 500. That is, the thermal energy generated from the heating electrode 310 can be directed to flow upward to the electrostatic portion 200. Therefore, the insulating portion 400 may have a third heat transfer coefficient smaller than the first and second heat transfer coefficients.

The insulating portion 400 may include high-temperature plastic glass type ceramics such as cerium oxide, magnesium oxide, and zinc oxide (ZnO). Alternatively, the insulating portion 400 may also include ruthenium, a polymer, and a mixture of ruthenium and a polymer, such as an acryl resin and an epoxy resin.

For example, the third heat transfer coefficient ranges from about 0.5 W/(mK) to 5 W/(mK), and has a volume impedance of about 10 ⁸ Ωcm to about 10 ¹⁶ Ωcm, which is combined with the electrostatic portion 200 and the heating portion 300. The volumetric impedance is similar.

When the thickness t3 of the insulating portion 400 is less than about 0.05 mm, the temperature distribution of the substrate 10 may become uneven due to the coolant flowing through the passage 510 in the body 500 located below the insulating portion 400. Further, the efficiency of conducting thermal energy to the substrate 10 is also reduced by the coolant, and thus the heating electrode 310 is required to generate more thermal energy to compensate for the reduced heat transfer efficiency. Further, since the thickness t3 of the insulating portion 400 is not sufficient to prevent heat from being conducted downward to the body 500, a larger amount of cooling liquid or cooling time is required to sufficiently cool the body 500.

In contrast, when the thickness of the insulating portion 400 is more than about 0.5 mm, even if the thickness of the insulating portion 400 is further increased, the thermal blocking effect of the insulating portion 400 is not further increased. Therefore, the thickness t3 of the insulating portion 400 ranges from about 0.05 mm to 0.5 mm, so that the insulating portion 400 can block the conduction of thermal energy to the body without an additional thickness.

The body 500 may be located under the insulating portion 400, and the adhesive layer 600 may be interposed between the body 500 and the insulating portion 400. Therefore, the insulating portion 400 and the body 500 can be bonded to each other through the adhesive layer 600. The body 500 and the adhesive layer 600 can support the insulating portion 400 together with each other, and thus the combination of the body 500 and the adhesive layer 600 can serve as a support for supporting the insulating portion 400.

The body 500 can include a passage 510 for circulating coolant into the passage 510. The passage 510 may be uniformly disposed in the body 500, and the body 500 may prevent heat energy heated by the heating portion 300 from being heated.

Figure 3 is a cross-sectional view showing an apparatus for processing a substrate and including the electrostatic chuck shown in Figure 1. In the third embodiment, the same reference numerals as those in FIGS. 1 and 2 denote the same elements, and thus detailed descriptions of the same elements will be omitted. A device for processing a substrate by using the electrostatic chuck 100 shown in Fig. 1 is hereinafter referred to as a processing device.

Referring to FIG. 3, the processing apparatus 1000 can include a processing chamber 700, a gas supply 800, and an electrostatic chuck 100.

The processing chamber 700 can include an internal space for loading and processing the substrate 10 therein to fabricate integrated circuit devices such as semiconductor memory devices and drive circuit devices for use in flat panel display devices. For example, an etch process can be performed on the substrate 10 in the processing cavity 700. In the case of an etching process, the internal space of the processing chamber can be in a vacuum state.

Gas supply 800 can be coupled to processing chamber 700 and process gas 20 can be supplied to processing chamber 700. For example, gas supply 800 can be coupled to the upper portion of processing chamber 700.

The process gas 20 will vary with the processing process performed in the process chamber 700. In the etching process, the inactive gas for generating a plasma state, and the source gas used in the etching process, may be supplied to the processing chamber 700 as the processing gas 20. A high frequency power source can be supplied to the gas supply 800 to create a plasma state in the processing chamber 700.

The electrostatic chuck 100 can be located in the lower portion of the processing chamber 700, and the substrate 10 can be loaded and secured over the electrostatic chuck 100.

The substrate 10 can be uniformly heated by referring to the electrostatic chuck 100 described in detail in FIGS. 1 and 2, so that the substrate 10 can be uniformly processed through the processing gas 20 in the processing chamber 700, thus reducing or The processing defects on the substrate 10 in the processing chamber 700 are minimized and the device quality of the integrated circuit device fabricated in the processing device 1000 can be enhanced.

According to an exemplary embodiment of the present invention, the electrostatic chuck may include an electrostatic portion electrostatic portion for placing the substrate, and a heating portion portion with the heating portion below the electrostatic portion. The heating portion having the second heat transfer coefficient may include a heating electrode to generate thermal energy, and the electrostatic portion having the first heat transfer coefficient may include an electrostatic electrode to generate an electrostatic force. The electrostatic chuck can be constructed using such a setting that the second heat transfer coefficient can be greater than the first heat transfer coefficient. Therefore, the heat energy generated from the heating electrode can be first uniformly conducted to the heating portion, and then, due to the difference in the heat transfer coefficient, the heat energy is again conducted from the heating portion to the electrostatic portion. Finally, thermal energy can be uniformly conducted from the electrostatic portion to the substrate, thereby uniformly heating the substrate.

Accordingly, the substrate is uniformly processed through the processing gas in the processing chamber, thereby minimizing processing defects on the substrate in the processing chamber and improving the device quality of the integrated circuit device fabricated in the processing device.

In view of the above, the present invention has been disclosed in the above-described preferred embodiments, and is not intended to limit the invention, and various modifications may be made without departing from the spirit and scope of the invention. With retouching. Accordingly, all such modifications and refinements are included in the scope of the present invention as defined in the scope of the patent application. In the context of the patent application, a means-plus-function clause is used to cover the functions described in the structure described herein, and encompasses not only structural equivalents but also equivalent structures. Therefore, the present invention has been described in terms of several preferred embodiments, which are not intended to limit the specific embodiments disclosed, and the modifications of the disclosed and other embodiments are included in the scope of the patent application. Therefore, the scope of the invention is defined by the scope of the appended claims.

10‧‧‧Substrate

20‧‧‧Processing gas

100‧‧‧Electrostatic chuck

200‧‧‧Electrostatic Department

210‧‧‧Electrostatic electrodes

300‧‧‧heating department

310‧‧‧heating electrode

400‧‧‧Insulation

500‧‧‧ subject

510‧‧‧ channel

600‧‧‧ adhesive layer

700‧‧‧Processing cavity

800‧‧‧ gas supply

T1‧‧‧first thickness

T2‧‧‧second thickness

T3‧‧‧ third thickness

1 is a cross-sectional view showing an electrostatic chuck corresponding to an exemplary embodiment of the present invention.

Fig. 2 is a cross-sectional view showing the electrostatic portion, the heating portion, and the insulating portion of the electrostatic chuck shown in Fig. 1 in detail.

Figure 3 is a cross-sectional view showing an apparatus for processing a substrate and including the electrostatic chuck shown in Figure 1.

10. . . Substrate

20. . . Processing gas

100. . . Electrostatic chuck

200. . . Electrostatic part

210. . . Electrostatic electrode

300. . . Heating department

310. . . Heating electrode

400. . . Insulation

500. . . main body

510. . . aisle

600. . . Adhesive layer

700. . . Processing cavity

800. . . Gas supply

Claims (10)

An electrostatic chuck includes: an electrostatic portion for fixing a substrate on the electrostatic portion by electrostatic force, the electrostatic portion having an electrostatic electrode to generate the electrostatic force, the electrostatic portion having a first heat transfer coefficient; And a heating portion under the electrostatic portion for heating the substrate, the heating portion having a heating electrode for generating thermal energy, the heating portion having a second heat transfer coefficient greater than the first heat transfer coefficient, wherein the heating portion The portion and the heating electrode have the same thickness, and the side surface of the heating electrode is covered by the heating portion. The electrostatic chuck according to claim 1, wherein the composition of the heating portion comprises a ceramic having one of aluminum nitride (AlN), magnesium oxide (MgO), yttrium oxide (Y2O3), and a combination thereof. The electrostatic chuck of claim 1, wherein the second heat transfer coefficient ranges from 150 W/(mK) to 250 W/(mK). The electrostatic chuck according to claim 1, wherein the electrostatic portion has a thickness of from 1 mm to 5 mm. The electrostatic chuck according to claim 1, wherein an upper surface of the heating portion is in contact with a lower surface of the electrostatic portion. The electrostatic chuck according to claim 1, further comprising an insulating portion, the insulating portion is located under the heating portion, the insulating portion has a third heat transfer coefficient, and the third heat transfer coefficient is smaller than the first A heat transfer coefficient. The electrostatic chuck according to claim 6, wherein the insulating portion has a thickness of 0.05 mm to 0.5 mm. The electrostatic chuck according to claim 6, wherein an upper surface of the insulating portion is in contact with a lower surface of the heating portion. A processing apparatus for processing a substrate, the apparatus comprising: a processing cavity in which the substrate is processed; a gas supply coupled to the processing cavity for supplying gas to the processing cavity Processing the substrate; and an electrostatic chuck is disposed in the processing cavity for fixing the substrate, wherein the electrostatic chuck comprises: an electrostatic portion for fixing the substrate to the electrostatic portion by electrostatic force The electrostatic portion has an electrostatic electrode to generate the electrostatic force, the electrostatic portion has a first heat transfer coefficient, and a heating portion is disposed under the electrostatic portion for heating the substrate, the heating portion having a heating electrode Thermal energy is generated, the heating portion having a second heat transfer coefficient greater than the first heat transfer coefficient, wherein the heating portion and the heating electrode have the same thickness, and a side surface of the heating electrode is covered by the heating portion. The device of claim 9, wherein the electrostatic chuck further comprises an insulating portion, the insulating portion is located under the heating portion, the insulating portion has a third heat transfer coefficient, and the third heat transfer coefficient is Less than the first heat transfer coefficient, an upper surface of the heating portion is in contact with a lower surface of the electrostatic portion, and a lower surface of the heating portion is in contact with an upper surface of the insulating portion.