TWI424278B - Exposure treatment unit - Google Patents

Description

Exposure processing unit

The present invention relates to a substrate processing system and method, and more particularly to a system and method for performing a photolithography process on a wafer.

In order to manufacture semiconductor components, various processes such as a cleaning process, a deposition process, a photolithography process, an etching process, and an ion implantation process are performed. In the high integration of semiconductor components, the photography process for forming patterns plays an important role.

In general, a system for performing the photolithography process includes: a coating unit for coating a photoresist on a wafer; and a developing unit for the pair having experienced An exposure process wafer performs a development process; and a processing module has an interface for direct connection to an exposure apparatus. In recent years, with the high integration of semiconductor components, the time required to perform an exposure process has increased. This causes wafer clogging in the exposure device. Therefore, in the coating and developing unit provided in a substrate processing module, the processing efficiency is remarkably deteriorated.

The present invention provides a substrate processing system and method that improves the efficiency of a lithography process.

The present invention also provides a substrate processing system and method that increases the production efficiency of a unit for performing a coating and developing process, which are performed before and after an exposure process, respectively.

The present invention also provides a substrate processing system having a layout that can effectively configure a processing chamber for performing a process.

The object of the present invention is not limited to the above, and other objects of the present invention will become apparent to those skilled in the art from this description.

A specific embodiment of the present invention provides a substrate processing system, comprising: a coating unit for performing a coating process on a substrate; and an exposure before and after processing unit connected to an exposure unit for The substrate processed in the coating unit performs an exposure process and performs an pre-exposure/exposure post-processing process; and a developing unit for performing a developing process on the substrate that has been processed in the pre-exposure processing unit. Each of the coating unit, the pre-exposure processing unit and the developing unit comprises: a loading port on which a container for accommodating the substrate is disposed; and an indexing module for taking out the substrate from the container Or transporting the substrate to the container; and a processing module for performing a predetermined process on the substrate. The loading port, the indexing module, and the processing module are arranged in sequence. The pre- and post-exposure processing unit further includes: an interface module connected to the exposure unit, the interface module is disposed on one side of the processing module, and the indexing module is disposed on the other side of the processing module .

In a specific embodiment, the processing module of the pre-exposure processing unit may include a first module and a second module disposed in different layers. The first module may include a protective layer coating chamber for applying a protective layer on the substrate, a baking chamber for performing a heat treatment on the substrate, and a first A robot for transferring a substrate between the protective layer coating chamber and the baking chamber. The second module can further include a cleaning chamber for cleaning the substrate. In addition, the second module may include an after-exposure baking chamber for performing post-exposure baking on the exposed substrate; and a second robot for use in the cleaning chamber The substrate is transferred between the post-exposure baking chambers.

In other embodiments, the pre- and post-exposure processing unit may further include a buffer module disposed between the indexing module and the processing module, wherein the buffer module includes: a first a buffer region disposed at a height corresponding to the height of the first module and temporarily storing the substrate; and a second buffer region disposed at a height corresponding to the height of the second module and temporarily storing the substrate. The first and second buffers may be stacked on each other, and each of the first and second buffers may include a plurality of supports. In addition, the buffer module of the pre-exposure processing unit may further include a buffer robot for transferring the substrate between the first and second buffers. The first and second buffers may be arranged side by side in a vertical direction. The buffer module can be disposed at a height corresponding to the first module and further includes a cooling chamber for cooling the substrate.

In another embodiment, the interface module may include a first buffer disposed at a height corresponding to the height of the first module and temporarily storing the substrate; and a second buffer disposed on the corresponding buffer a height of the second module and temporarily storing the substrate; and an interface robot for transferring the substrate between the exposure unit and the second buffer and between the second buffer and the exposure unit.

In another embodiment, the coating unit may further include an edge exposure module, wherein the edge exposure module may be disposed on one side of the processing module, and the indexing module may be disposed in the processing module The other side.

In another embodiment of the present invention, an pre-exposure processing unit is configured to perform a desired process on a substrate on which a photoresist is applied before and after an exposure process, the pre- and post-exposure processing unit comprising: a loading port provided with a container for accommodating the substrate; an indexing module for taking out the substrate from the container or transporting the substrate to the container; a processing module, It is used to perform a process on the substrate; and an interface module connected to an exposure unit. The loading port, the indexing module, the processing module, and the interface module are sequentially disposed in a first direction, and the processing module includes a protective layer coating chamber, and the protective layer coating chamber is used for A protective layer is applied over the substrate. The processing module can further include a cleaning chamber for cleaning the substrate. The processing module may further comprise a baking chamber for heat treating the substrate. The processing module may further comprise an exposure post-baking chamber for performing an exposure post-baking process on the exposed substrate.

In a specific embodiment, the processing module may include a first module and a second module disposed on different layers, wherein the protective layer coating chamber may be disposed in the first module, and the cleaning room may be set In the second module. The processing module may further include a baking chamber disposed in the first module and used for heat processing the substrate; a first robot disposed in the first module and used in the protective layer Transferring a substrate between the coating chamber and the baking chamber; a post-exposure baking chamber disposed in the second module and configured to perform an exposure post-baking process on the exposed substrate; and a second robot It is disposed in the second module and is configured to transfer the substrate between the cleaning chamber and the post-exposure baking chamber.

In other embodiments, the pre- and post-exposure processing unit may further include a buffer module disposed between the indexing module and the processing module, wherein the buffer module may include a first buffer And a second buffer region disposed at a height corresponding to the height of the second module and temporarily storing the substrate. The first and second buffers may be stacked on each other, and each of the first and second buffers may include a plurality of supports on which the substrates are respectively disposed. The buffer module can further include a buffer machine a person for transferring the substrate between the first and second buffers. The first and second buffers may be arranged side by side in a vertical direction. The buffer module can be disposed at a height corresponding to the first module and further includes a cooling chamber for cooling the substrate.

In another embodiment, the interface module may include a first buffer disposed at a height corresponding to the height of the first module and temporarily storing the substrate; and a second buffer disposed on the corresponding buffer a height of the second module and temporarily storing the substrate; and an interface robot for transferring the substrate between the first buffer and the exposure unit and between the second buffer and the exposure unit. The first and second buffers may be stacked on each other, and each of the first and second buffers may include a plurality of supports, and the substrates are respectively disposed on the support.

In still other specific embodiments of the present invention, a pre- and post-exposure processing unit performs a desired process on a substrate on which a photoresist is applied before and after an exposure process, the pre- and post-exposure processing unit includes a loading port, a container for accommodating the substrate is disposed on the loading port; an indexing module, the substrate is taken out from the container, or the substrate is transported to the container; and a processing module is executed on the substrate a process module; a buffer module disposed between the indexing module and the processing module; and an interface module coupled to an exposure unit. The loading port, the indexing module, the buffer module, the processing module, and the interface module are sequentially disposed in a first direction, and the processing module includes first and second layers disposed on different layers Module. The first module comprises: a protective layer coating chamber for applying a protective layer on the substrate; a baking chamber for heat treating the substrate; and a reflow chamber having a first robot, It is used to transfer a substrate between the protective layer coating chamber, the baking chamber, the buffer module, and the interface module. The second module comprises: a cleaning chamber for cleaning the substrate; an exposure post-baking chamber for performing an exposure post-baking process on the substrate; and a reflow chamber equipped with a second robot for use in the cleaning chamber, The wafer is transferred between the post-exposure baking chamber, the buffer module, and the interface module.

In other specific embodiments, the protective layer coating chamber, the reflow chamber equipped with the first robot, and the baking chamber may be sequentially disposed in a second direction, and the cleaning chamber is equipped with the second robot The reflow chamber and the post-exposure bake chamber may be sequentially disposed in the second direction.

In other embodiments, the first module can be disposed on the second module. The buffer module may include: a first buffer disposed at a height corresponding to the first module and temporarily storing the substrate; and a cooling chamber disposed at a height corresponding to the second module Used to cool the substrate. The first buffer zone and the cooling chamber may be arranged side by side in a vertical direction. In the first direction, the first buffer may be configured to be in line with the return chamber of the first module.

In still other specific embodiments, the buffer module may further include: a second buffer disposed at a height corresponding to the height of the second module and temporarily storing the substrate; and a buffer robot in the The substrate is transferred between the first and second buffer regions. The first buffer and the buffer robot may be disposed in a second direction perpendicular to the first direction from the top view.

In still another specific embodiment of the present invention, a substrate processing method includes: coating a photoresist on the substrate; coating a protective layer on the substrate on which the photoresist is coated; The substrate on which the protective layer is coated is subjected to a liquid immersion lithography process; the substrate that has been processed in the liquid immersion lithography process is cleaned; and a developing process is performed on the substrate. Coating of the protective layer and clearing of the substrate The cleaning is performed in an exposure before and after processing unit, and the pre-exposure processing unit is connected in line with an exposure unit that performs the liquid infiltration lithography process. The coating of the photoresist is performed in a coating unit separated from the pre- and post-exposure processing unit. The execution of the development process is implemented in a coating unit that is separate from the pre- and post-exposure processing unit.

In a specific embodiment, the method may further include performing an exposure post-baking process on the substrate after cleaning the substrate and before performing a developing process on the substrate. The cleaning of the substrate can be performed by supplying a cleaning liquid to the substrate, and the cleaning liquid remaining on the substrate can be removed by heating the substrate without drying the substrate by supplying a fluid.

The cleaning of the substrate can be performed by supplying a cleaning liquid to the substrate, and the cleaning liquid remaining on the substrate can be removed in an exposure post-baking process performed immediately after cleaning of the substrate.

The protective layer can be removed outside of one of the pre- and post-exposure processing units. A portion of the protective layer can be removed during the development process while the remainder can be removed in an ashing process.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings. However, the invention may be embodied in various forms and should not be construed as being limited to the specific embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough, In the drawings, the dimensions of layers and regions are exaggerated for clarity of illustration.

The system of the illustrative embodiments is for performing a lithography process on a substrate such as a flat panel display or a semiconductor wafer. In particular, the system of the exemplary embodiment is used to perform a process for processing a substrate, such as a coating process. Process, an imaging process, and other processes required before and after a liquid infiltration lithography process. In the following description, a case in which a wafer is used as a substrate will be exemplified.

The first drawing is a schematic schematic view of a substrate processing system in accordance with an exemplary embodiment of the present invention. Referring to the first figure, a substrate processing system 1 includes a coating unit 3000, an exposure before and after processing unit 4000, and a developing unit 5000. The coating unit 3000 and the pre- and post-exposure processing unit 4000 are separated from each other. Between the coating unit 3000 and the pre- and post-exposure processing unit 4000, a wafer W is transferred by an automatic transfer unit 1000 or a worker. This wafer W is conveyed in a state of being housed in a container (2000 in the second drawing). Here, the container 2000 is configured to be sealed. For example, a front wafer open wafer transfer cassette (FOUP) having a front door can be used as the container 2000. In the following description, a case will be described in which the longitudinal direction of the coating unit 3000, the pre-exposure processing unit 4000, and the developing unit 5000 are arranged side by side. However, the longitudinal directions of the coating unit 3000, the pre-exposure processing unit 4000, and the developing unit 5000 may not be arranged side by side.

The coating unit 3000 performs a first process on the wafer W. The first process includes: a coating process for applying a photoresist on the wafer; and a heat treatment process for heating and cooling the wafer W before or after the coating process.

The developing unit 5000 performs a second process on the wafer W. The second process includes: a developing process that uses a developing solution to remove the photoresist to form a desired pattern; and a heat treatment process for heating and cooling the crystal before or after the developing process Round W.

The pre- and post-exposure processing unit 4000 is directly connected to an exposure unit 9000. The pre- and post-exposure processing unit 4000 performs a third process. The third process includes a process performed between the first process and the exposure process, and a process performed between the exposure process and the second process. For example, when the exposure unit performs a liquid immersion lithography process, the third process may include a process for coating a protective layer, the protective layer is protected during exposure to lithography in the liquid. A photoresist disposed on the wafer W. Additionally, the third process can include a process for cleaning the wafer after the exposure process. Further, when a chemically amplified photoresist is used for the coating process and deep ultraviolet light (DUV) is used for the exposure process, the third process may include a post-baking process performed after the exposure process.

The respective units will be explained below.

(coating unit)

The second to fourth figures are schematic schematic views of the coating unit 3000. That is, the second drawing is a view when the coating unit 3000 is viewed from above, and the third drawing is a view when the coating unit 3000 of the second drawing is viewed in the direction "A", and the fourth drawing is the second drawing. The view of the coating unit 3000 when viewed in the direction "B".

Referring to the second to fourth embodiments, the coating unit 3000 includes a loading port 3100, an indexing module 3200, a buffer module 3300, a processing module 3400, and an edge exposure module 3500. The loading port 3100, the indexing module 3200, the buffer module 3300, the processing module 3400, and the edge exposure module 3500 are sequentially arranged on a straight line, and the straight line extends in one direction. Hereinafter, the direction in which the load port 3100, the indexing module 3200, the buffer module 3300, the processing module 3400, and the edge exposure module 3500 are disposed will be referred to as a “first direction 12”, which is perpendicular to the view from above. The direction of the first direction will be referred to as "second direction 14" and perpendicular to the first and second directions 12 and 14 The direction will be referred to as the "third direction 16".

The load port 3100 includes a plurality of loading stages 3120, and the container 2000 that houses the wafer W is disposed on the loading table 3120. The loading station 3120 is disposed on a line extending in the second direction 14. In the second figure, four loading stations 3120 are provided.

The indexing module 3200 transfers the wafer W between the container 2000 on the loading platform 3120 of the loading port 3100 and the buffer module 3300. The indexing module 3200 includes a frame 3210, an indexing robot 3220, and a guide rail 3230. The frame 3210 is generally formed in the form of an empty rectangular parallelepiped. The frame 3210 is disposed between the load port 3100 and the buffer module 3300. The height of the frame 3210 of the indexing module 3200 can be lower than one of the frames 3310 of the buffer module 3300 (which will be described below). The indexing robot 3220 and the guide rail 3230 are disposed in the frame 3210. The indexing robot 3220 has a 4-axis drive structure such that a hand 3221 directly processing the wafer W can be rotated and moved in the first, second and third directions 12, 14, 16. In addition to the hand 3221, the indexing robot 3220 further includes an arm 3222, a support 3223, and a base 3224. The hand 3221 is fixedly mounted on the arm 3222. The arm 3222 is provided to be expandable, collapsible, and rotatable. The support 3223 is arranged to facilitate its lengthwise extension in the third direction 16. The arm 3222 is coupled to the support 3223 so as to be movable along the support 3223. The support 3223 is fixedly coupled to the base 3224. The rail 3230 is provided to facilitate its lengthwise extension in the second direction 14. The base 3224 is coupled to the rail 3230 so as to be linearly movable along the rail 3230. Although not shown in the drawings, the frame 3210 is equipped with a door opener for opening and closing the door of the container 2000.

Referring to the third figure, the buffer module 3300 includes a frame 3310, a first A buffer 3320, a second buffer 3330, a first cooling chamber 3340, a second cooling chamber 3350, and a buffer robot 3360. The frame 3310 is formed in an empty rectangular parallelepiped shape. The frame 3310 is disposed between the indexing module 3200 and the processing module 3400. The first buffer zone 3320, the second buffer zone 3330, the first cooling chamber 3340, the second cooling chamber 3350, and the buffer robot 3360 are disposed in the frame 3310. The second cooling chamber 3350, the second buffer zone 3330, the first cooling chamber 3340, and the first buffer zone 3320 are arranged in the order of the third direction 16 in the upward direction. The first cooling chamber 3340 and the first buffer zone 3320 are positioned at the same height as the first module 3401 (described below) of the processing module 3400. The second cooling chamber 3350 and the second buffer zone 3330 are positioned at the same height as the second module 3402 (described below) of the processing module 3400. The buffer robot 3360 is positioned to be spaced apart from the second buffer 3330, the second cooling chamber 3350, the first buffer 3320, and the first cooling chamber 3340 by a predetermined distance in the second direction 14.

Each of the first and second buffers 3320, 3330 temporarily stores a plurality of the wafers W. The second buffer 3330 includes a housing 3331 and a plurality of supports 3332. The supports 3332 are disposed in the outer casing 3331 and are spaced apart from each other in the third direction 16. A wafer W is disposed on each of the supports 3332. The housing 3331 is provided with openings (not shown) corresponding to the indexing robot 3220, the buffer robot 3360, and the second robot 3482, so that the indexing robot 3220, the buffer robot 3360, and the second module 3402 A second robot 3482 (which will be described below) can transport the wafer to the support 3332 or take the wafer from the support 3332. The first buffer 3320 has a structure similar to the second buffer 3330. However, the first buffer 3320 The housing 3321 is provided with an opening corresponding to the buffer robot 3360 and one of the first robots 3432 (described below) on the first module 3401. The number of the supports 3322 of the first buffer zone 3320 may be the same as or different from the number of the supports 3332 of the second buffer zone 3330. For example, the number of the second buffers 3330 of the support 3332 may be greater than the number of the supports 3322 of the first buffer 3320.

The buffer robot 3360 transfers the wafer W between the first and second buffers 3320 and 3330. The buffer robot 3360 includes a hand 3361, an arm 3362, and a support 3363. The hand 3361 is fixedly mounted to the arm 3362. The arm 3362 is configured to expand and contract so that the hand 3361 can move in the second direction 14. The arm 3362 is coupled to the support 3363 so as to be linearly movable along the support 3363 in the third direction 16. The support 3363 has a length that extends from a position corresponding to the second buffer 3330 to a position corresponding to the first buffer 3320. The support 3363 can further extend to a position corresponding to the second buffer 3330 or a position corresponding to the first buffer 3320. The buffer robot 3360 can be assembled to have a 2-axis drive structure such that the hand 3361 moves only in the second and third directions 14, 16.

The first and second cooling chambers 3340, 3350 cool the wafer W. The second cooling chamber 3350 has a housing 3351 and a cooling plate 3352. The cooling plate 3352 has a top surface on which the wafer W is disposed, and a cooling element 3353 that cools the wafer W. The cooling element 3353 can be formed from various components such as cooling water, a thermoelectric module, and the like. Additionally, the second cooling chamber 3350 can be provided with a lift pin assembly (not shown) that positions the wafer W over the cooling plate 3352. The housing 3351 is equipped with an opening corresponding to the indexing robot 3220 and the second robot 3482 (not Displaying, so that the indexing robot 3220 and the second robot 3482 of the second module 3402 (described below) can transport the wafer W onto or from the cooling plate 3352 or from the cooling plate 3352 The wafer W is taken out. Additionally, the second cooling chamber 3350 can be equipped with a door (not shown) for opening and closing the opening. The first cooling chamber 3340 has the same structure as the second cooling chamber 3350.

The processing module 3400 performs a required process before the wafer W is transferred to the pre- and post-exposure processing unit 4000. The processing module 3400 is generally formed in a rectangular parallelepiped shape. The processing module 3400 includes a first module 3401 and a second module 3402. The first and second modules 3401, 3402 are arranged in different layers. The first and second modules 3401, 3402 can be provided to perform an identical process. For example, the first module 3401 is positioned above the second module 3402.

The first module 3401 includes a photoresist coating chamber 3410, a baking chamber 3420, and a reflow chamber 3430. The photoresist coating chamber 3410, the baking chamber 3420, and the reflow chamber 3430 are disposed in the second direction 14 in this order. Therefore, the photoresist coating chamber 3410 and the baking chamber 3420 are spaced apart from each other in the second direction 14, and the return chamber 3430 is interposed therebetween. A plurality of the photoresist coating chambers 3410 are provided in the first and third directions 12, 16. In the drawings, six photoresist coating chambers 3410 are illustratively provided. A plurality of said baking chambers 3420 are provided on each of said first and third directions 12, 16. In the drawings, six baking chambers 3420 are illustratively provided. However, six or more baking chambers 3420 can be provided.

The return chamber 3430 and the first buffer zone 3320 of the buffer module 3300 are positioned side by side in the first direction 12 . The first robot 3432 and the guide rail 3433 are disposed in the return chamber 3430. The reflow chamber 3430 is generally Formed as a rectangle. The first robot 3432 is in the baking chamber 3420, the photoresist coating chamber 3400, the first buffer zone 3320 of the buffer module 3300, the first cooling chamber 3340, and one of the edge exposure modules 3500. The first buffer 3520 (which will be described later) and the first cooling chamber 3540 transfer the wafer W. The rail 3433 has a length direction extending in the first direction 12. The guide rail 3433 guides the linear motion of the first robot 3432 in the first direction 12. The robot 3432 has a hand 3434, an arm 3453, a support 3436 and a base 3437. The hand 3434 is fixedly mounted to the arm 3435. The arm 3435 is assembled to expand and contract so that the hand 3434 can move in a horizontal direction. The support 3436 is configured to facilitate its lengthwise extension in the third direction 16. The arm 3435 is coupled to the support 3436 so as to be linearly movable along the support 3436 in the third direction 16. The support 3436 is fixedly coupled to the base 3437 and the base 3437 is coupled to the rail 3433 so as to be movable along the rail 3433.

All of the photoresist coating chambers 3410 have the same structure. However, the types of photoresists used in the respective photoresist coating chambers 3410 may be different from each other. For example, a chemically amplified photoresist can be used as the photoresist. The photoresist coating chamber 4310 coats the photoresist on the wafer W. The photoresist coating chamber 3410 includes a housing 3411, a support plate 3412, and a nozzle 3413. The outer casing 3411 is formed in the shape of a cup having an open top end. The support plate 3412 is positioned in the outer casing 3411 to support the wafer W. The support plate 3412 is assembled to be rotatable. The nozzle 3413 supplies a photoresist to the wafer W on the support plate 3412. The nozzle 3413 is formed in a circular tube shape to supply a photoresist to the center of the wafer W. The nozzle 3413 can have a length corresponding to the diameter of the wafer W and has a slit-type outlet. In addition, the photoresist coating chamber 3410 may further include a nozzle 3414 for supplying a cleaning liquid (such as deionized water) for cleaning a surface of the wafer W, and coating the surface on the surface. Resistor.

The baking chamber 3420 heats the wafer W. For example, before the photoresist is coated on the wafer W, the baking chamber 3420 performs a pre-bake process for heating the wafer W from the wafer by heating at a predetermined temperature. The surface of the circle W is removed from the organic matter or wet; and after the photoresist is coated on the wafer W, a soft baking process is performed. The baking chamber 3420 further performs a cooling process after the respective heating processes. The baking chamber 3420 includes a cooling plate 3421 or a heating plate 3422. The cooling plate 3421 is provided with a cooling element 3423, such as a cooling water or thermoelectric module. The heating plate 3422 is provided with a heating element 3424, such as a heating wire or a thermoelectric module. The heating plate 3422 and the cooling plate 3421 can be provided in respective baking chambers 3420. Alternatively, some of the toasting chambers 3420 may be provided with only the heating plate 3422, while other toasting chambers may be provided with only the cooling plate 3421.

The second module 3402 includes a photoresist coating chamber 3460, a baking chamber 3470, and a reflow chamber 3480. The photoresist coating chamber 3460, the baking chamber 3470, and the reflow chamber 3480 have the same structure as the photoresist coating chamber 3410 of the first module 3401, the baking chamber 3420, and the reflow chamber 3430. Configuration. In addition, the reflow chamber 3480 has a second robot 3482 having the same structure as the first robot 3432 of the first module 3401. The second robot 3482 is assembled in the photoresist coating chamber 3460, the baking chamber 3470, the second buffer zone 3330 and the second cooling chamber 3350 of the buffer module 3300, and the edge exposure module 3500. The wafer W is transferred between the second buffer region 3530 and the second cooling chamber 3550 (which will be described later).

In the above processing module 3400, the first and second modules 3401 and 3402 are separated from each other. In addition, the first module 3401 has the same structure and configuration as the second module 3402 when viewed from above.

The edge exposure module 3500 performs a process for exposing a peripheral region of the wafer W. The edge exposure module 3500 includes a frame 3510, a first buffer 3520, a second buffer 3530, a first cooling chamber 3540, a second cooling chamber 3550, an edge exposure robot 3560, and a first edge exposure. Room 3570, and a second edge exposure chamber 3580 (disposed under the first edge exposure chamber 3570 in the second figure). The frame 3510 is formed in a rectangular shape. The edge exposure chamber 3540, the first buffer zone 3520, the first edge exposure chamber 3570, the first cooling chamber 3540, the second buffer zone 3530, the second edge exposure chamber 3580, and the second cooling chamber 3550 are positioned within the frame 3510. The first buffer 3520, the second edge exposure chamber 3570 and the first cooling chamber 3540 are disposed at a height corresponding to the first module 3401. The second buffer zone 3530, the second edge exposure chamber 3580 and the second cooling chamber 3550 are disposed at a height corresponding to the second module 3402. The first buffer zone 3520, the first cooling chamber 3540, the second buffer zone 3530, and the second cooling chamber 3550 are arranged in order from above in a straight line extending in the third direction 16. The first buffer 3520 and the return chamber 3430 of the first module 3401 are arranged along a straight line extending in the first direction 12 from the top view. The first edge exposure chamber 3570 is spaced apart from the first buffer 3520 and the first cooling chamber 3540 by a predetermined distance in the second direction 14. The second edge exposure chamber 3580 is spaced apart from the second buffer zone 3530 and the second cooling chamber 3550 by a predetermined distance in the second direction 14 . The second edge exposure chamber 3580 and the first edge exposure chamber 3570 are disposed along a straight line extending in the third direction 16.

The edge exposure robot 3560 is in the first buffer 3520, the first The wafer W is transferred between the edge exposure chamber 3570, the first cooling chamber 3540, the second buffer region 3530, the second edge exposure chamber 3580, and the second cooling chamber 3550. The edge exposure robot 3560 is positioned between the first edge exposure chamber 3570 and the first buffer 3520. The edge exposure robot 3560 can have a structure similar to the buffer robot 3360.

The first buffer 3520, the first cooling chamber 3540 and the first edge exposure chamber 3570 perform the following processes on the wafer W that has been processed in the first module 3401. The first buffer 3520 and the second buffer 3560 have the same structure as the first buffer 3320 of the buffer module 3300. The first cooling chamber 3540 cools the wafer W that has been processed in the first module 3401. The first cooling chamber 3540 has a structure similar to the first cooling chamber 3340 of the buffer module 3300. The first edge exposure chamber 3570 performs an exposure process on the edge of the wafer W that has been cooled in the first cooling chamber 3540. The first buffer 3520 temporarily stores the wafer W before the wafer W that has been processed in the first edge exposure chamber 3570 is transferred to the first module 3401.

The second buffer 3530, the second cooling chamber 3550, and the second edge exposure chamber 3580 perform the following processes on the wafer W that has been processed in the second module 3402. The second cooling chamber 3550 cools the wafer W that has been processed in the second module 3402. The second cooling chamber 3550 has a structure similar to the second cooling chamber 3350 of the buffer module 3300. The second edge exposure chamber 3580 performs an exposure process on the edge of the wafer W that has been processed in the second cooling chamber 3550. The second buffer 3530 temporarily stores the wafer W before the wafer W that has been processed in the second edge exposure chamber 3580 is transferred to the second module 3402.

The coating unit will be described below with reference to FIGS. 5A and 5B. 3000 coating process. 5A and 5B are flow diagrams illustrating a process performed on a wafer in the coating unit 3000 in accordance with an embodiment.

The container 2000 accommodating the wafer W is placed on the loading table 3120 of the loading port 3100 (S112). The door of the container 2000 is opened by the door opener. The indexing robot 3220 takes out the wafer W from the container 2000 and transports the wafer W to the second buffer area 3330 (S112). The wafer W is transferred to one of the first and second modules 3401, 3402.

When the wafer W is selected to be processed in the first module 3401, the buffer robot 3360 transports the wafer W stored in the second buffer 3330 to the first buffer 3320 (S120). The first robot 3432 takes out the wafer W from the first buffer zone 3320, and transports the wafer W to the baking chamber 3420 (S112). The baking chamber 3420 sequentially performs a pre-bake process and a cooling process (S124). The first robot 3432 takes out the wafer W from the baking chamber 3420, and transports the wafer W to the photoresist coating chamber 3410 (S126). The photoresist coating chamber 3410 applies a photoresist onto the wafer W (S128). Next, the first robot 3432 transports the wafer W from the photoresist coating chamber 3410 to the baking chamber 3420 (S130). The baking chamber 3420 performs a soft baking process on the wafer W (S132).

The first robot 3432 takes out the wafer W from the baking chamber 3420, and transports the wafer W to the first cooling chamber 3540 of the edge exposure module 3500 (S134). The first cooling chamber 3540 performs a cooling process on the wafer W (S136). The cooling process is selectively performed in the baking chamber 3420, and the wafer W can be directly transferred from the baking chamber 3420 to the first buffer zone 3520. The wafer W that has been processed in the first cooling chamber 3540 is transferred to the first edge exposure chamber 3570 by the edge exposure robot 3560 (S138). The wafer W that has been processed in the first cooling chamber 3540 can be transported to the first buffer 3520 by the edge exposure robot 3560 and temporarily stored in the first buffer 3520, after which the wafer W can be borrowed. The edge exposure robot 3560 is transported to the first edge exposure chamber 3570. The first edge exposure chamber 3570 performs a process for exposing the edge of the wafer W (S140). The wafer W that has been processed in the first edge exposure chamber 3570 is transported to the first buffer 3520 by the edge exposure robot 3560 (S142).

The first robot 3432 transports the wafer W from the first buffer zone 3520 to the baking chamber 3420 (S144). The baking chamber 3420 performs a process for heating the wafer W (S146). The first robot 3432 transports the wafer W from the baking chamber 3420 to the first cooling chamber 3340 of the buffer module 3300 (S148). The first cooling chamber 3340 performs a process for cooling the wafer W (S150). The indexing robot 3220 transports the wafer W from the first cooling chamber 3340 to the container 2000 (S152).

When the wafer W is selected to be processed in the second module 3402, the second robot 3482 extracts the wafer W from the second buffer 3330, and transports the wafer W to the second module 3402. Baking chamber 3470 (S160). The baking chamber 3470 sequentially performs a pre-bake process and a cooling process (S162). The second robot 3482 takes out the wafer W from the baking chamber 3470, and transports the wafer W to the photoresist coating chamber 3460 (S164). In the photoresist coating chamber 3460, a photoresist is coated on the wafer W (S166). Next, the second robot 3482 transports the wafer W from the photoresist coating chamber 3460 to the baking chamber 3470 (S168). The baking chamber 3470 performs a soft baking process on the wafer W (S170).

The second robot 3482 extracts the wafer W from the baking chamber 3470 and transports the wafer W to the second cooling chamber of the edge exposure module 3500. 3550 (S172). The second cooling chamber 3550 performs a process for cooling the wafer W. Alternatively, the cooling process can be performed in the baking chamber 3470, and the wafer W can be transported directly from the baking chamber 3470 to the second buffer zone 3530. The wafer W that has been processed in the second cooling chamber 3580 is transported to the second edge exposure chamber 3580 by the edge exposure robot 3560 (S174). The wafer W that has been processed in the second cooling chamber 3550 can be transported to the second buffer 3530 by the edge exposure robot 3560 and temporarily stored in the second buffer 3530, after which the wafer W can be borrowed. The edge exposure robot 3560 is transported to the second edge exposure chamber 3580 (S176). The second edge exposure chamber 3580 performs a process for exposing the edge of the wafer W (S178). The wafer W that has been processed in the second edge exposure chamber 3580 is transported to the second buffer 3530 by the edge exposure robot 3560 (S180).

The second robot 3482 transports the wafer W from the second buffer zone 3530 to the baking chamber 3470 (S182). The baking chamber 3470 performs a process for heating the wafer W (S184). The second robot 3482 transports the wafer W from the baking chamber 3470 to the second cooling chamber 3350 of the buffer module 3300 (S186). The second cooling chamber 3350 performs a process for cooling the wafer W (S188). The indexing robot 3220 transports the wafer W from the second cooling chamber 3350 to the container 2000 (S190).

Various modified examples of the above coating unit 3000 will be described below.

The processing module 3400 may include only one module instead of the first and second modules 3401 and 3402 disposed in different layers.

In addition, in the indexing module 3200, a plurality of first cooling chambers 3340 and a plurality of second cooling chambers 3350 may be stacked on each other. In addition, in the edge exposure module 3500, a plurality of first cooling chambers 3540 and a plurality of Edge exposure chamber 3570. In the edge exposure module 3500, a plurality of second cooling chambers 3550 and a plurality of second edge exposure chambers 3580 may also be provided.

Further, in the buffer module 3300, the first and second cooling chambers 3340 and 3350 may not be provided. In this case, the wafer W can be directly transferred from the first module 3401 to the first buffer 3320 by the first robot 3432, and the indexing robot 3220 can be stored in the first buffer 3320. The wafer W is transported to the container 2000. In addition, the wafer W can be directly transferred from the second module 3402 to the second buffer 3330 by the second robot 3482, and the indexing robot 3220 can store the second buffer 3330. The wafer W is transported to the container 2000.

In addition, in the buffer module 3300, the positions of the first buffer area 3320 and the first cooling chamber 3340 can be exchanged. In the buffer module 3300, the positions of the second buffer zone 3330 and the second cooling chamber 3350 may also be exchanged.

In addition, the buffer module 3300 can have the same height as the processing module 3400. In this case, the indexing robot 3220 can transport the wafer W directly to the first buffer zone 3320.

In addition, in the edge exposure module 3500, the first cooling chamber 3540 and the second cooling chamber 3550 may not be provided. In this case, the wafer W that has been processed in the first module 3401 is directly transported to the first buffer 3520 by the first robot 3432. In addition, the wafer W that has been processed in the second module 3402 is directly transported to the second buffer 3530 by the second robot 3482.

In addition, in the edge exposure module 3500, the positions of the first cooling chamber 3540 and the first buffer 3520 can be exchanged, and the positions of the second cooling chamber 3550 and the second buffer 3530 can be exchanged.

In addition, the edge exposure module 3500 can include an upper robot (not shown) Shown for transferring the wafer W between the first edge exposure chamber 3570, the first buffer 3520 and the first cooling chamber 3540; and a robot (not shown) for the second edge The wafer W is transferred between the exposure chamber 3580, the second buffer 3530, and the second cooling chamber 3550 instead of including the edge exposure robot 3560.

Moreover, in addition to the processes described above, the processing module 3400 can perform other processes.

(pre-exposure processing unit)

6 to 8 are schematic schematic views of the pre-exposure processing unit 4000. That is, the sixth figure is a view when the pre-exposure processing unit 4000 is viewed from above, and the seventh figure is a view when the pre-exposure processing unit 4000 of the sixth figure is viewed in the direction "C", and the eighth picture is the The view of the six-figure before and after the processing unit 4000 is viewed in the direction "D".

Referring to the sixth to eighth embodiments, the pre- and post-exposure processing unit 4000 includes a loading port 4100, an indexing module 4200, a buffer module 4300, a processing module 4400, and an interface module 4500. The pre- and post-exposure processing unit 4000 is connected in line with the exposure unit 9000. The exposure unit 9000 is coupled to the interface module 4500 along a line extending in the first direction 12. For example, the exposure unit 9000 performs a process that uses a liquid exposure lithography technique. Further, the exposure unit 9000 performs the exposure process using a far-infrared radiation source such as a KrF-activated molecular laser or an ArF-activated molecular laser.

The loading port 4100 includes a loading table 4120 on which a container 2000 for accommodating the wafer W is disposed. A plurality of the loading stations 4120 are provided and arranged on a line extending in the second direction 14. In the sixth figure, four loading stations 41200 are provided.

The indexing module 420 transfers the wafer W between the loading port 4100 and the container 2000 on the loading station 4120. The indexing module 4200 includes a frame 4210, an indexing robot 4220, and a guide rail 4230. The frame 4210 is generally formed in the form of an empty rectangular parallelepiped. The frame 4210 is disposed between the loading port 4100 and the buffer module 4300. The height of the frame 4210 of the indexing module 4200 can be lower than one of the frames 4310 of the buffer module 4300 (which will be described below). The indexing robot 4220 and the guide rail 4230 are disposed in the frame 4210. The indexing robot 4220 has a 4-axis driving structure so that a hand 4221 directly processing the wafer W can move in the first, second and third directions 12, 14, 16 and can be in a horizontal plane. Rotate. In addition to the hand 4221, the indexing robot 4220 further includes an arm 4222, a support 4223, and a base 4224. The hand 4221 is fixedly mounted on the arm 4222. The arm 4222 is provided to be expandable, collapsible, and rotatable. The support 4223 is configured to facilitate its lengthwise extension in the third direction 16. The arm 4222 is coupled to the support 4223 so as to be linearly movable along the support 4223 in the third direction 16. The rail 4230 is provided to facilitate its lengthwise extension in the second direction 14. The support 4223 is fixedly coupled to the base 4224. The base 4224 is coupled to the rail 4230 so as to be linearly movable along the rail 4230. The frame 4210 is equipped with a door opener (not shown) for opening and closing the door of the container 2000.

The buffer module 4300 includes a frame 4310, a first buffer 4320, a second buffer 4330, a cooling chamber 4340, and a buffer robot 4350. The frame 4310 is formed in an empty rectangular parallelepiped shape. The frame 4310 is disposed between the indexing module 4200 and the processing module 4400. The first buffer 4320, the second buffer 4330, the cooling chamber 4340, and the buffer robot 4350 are disposed in the frame 4310. The second buffer 4330, the cooling chamber 4340 and the first buffer 4320 are arranged in the third direction 16 in the upward direction. The first buffer 4320 is positioned at the same height as the first module 4401 (described below) of the processing module 4400. The second buffer 4330 and the cooling chamber 4340 are positioned at the same height as the second module 4402 (described below) of the processing module 4450. The buffer robot 4350 is positioned to be spaced apart from the second buffer 4330, the cooling chamber 4340, and the first buffer 4320 by a predetermined distance in the second direction 14.

The first and second buffers 4320, 4330 temporarily store a plurality of the wafers W. The second buffer 4330 includes a housing 4331 and a plurality of supports 4332. The supports 4332 are disposed in the outer casing 4331 and are spaced apart from each other in the third direction 16. A wafer W is disposed on each of the supports 4332. The housing 4331 is provided with an opening (not shown) corresponding to the indexing robot 4220 and the buffer robot 4350, so that the indexing robot 4220 and the buffer robot 4360 can transport the wafer to the support 4332 or from the support 4332. Take out the wafer. The first buffer 4320 has a structure similar to the second buffer 4330. However, the outer casing 4321 of the first buffer 4320 is provided with an opening corresponding to the buffer robot 4350 and one of the first robots 4432 of the first module 4401 (which will be described later). The number of the supports 4322 of the first buffer 4320 may be the same as or different from the number of the supports 4332 of the second buffer 4330.

The buffer robot 4350 transfers the wafer W between the first and second buffers 4320, 4330. The buffer robot 4350 includes a hand 4261, an arm 4362, and a support 4363. The hand 4361 is fixedly mounted to the arm 4362. The arm 4362 is assembled to be expandable and contractible so that The hand 4361 can be moved in the horizontal direction. The arm 4362 is coupled to the support 4363 so as to be linearly movable along the support 4363 in the third direction 16. The support 4363 has a length that extends from a position corresponding to the second buffer 4330 to a position corresponding to the first buffer 4320. The support 4363 can further extend to a position corresponding to the second buffer 4330 or a position corresponding to the first buffer 4320. The buffer robot 4350 can be assembled to have a 2-axis drive structure such that the hand 3361 moves only in the second and third directions 14, 16. The cooling chamber 4340 cools the wafer W. The cooling chamber 4340 includes a housing 4341 and a cooling plate 4342. The cooling plate 4342 has a top surface on which the wafer W is disposed; and a cooling element 4343 for cooling the wafer W. As the cooling element 4343, various elements such as cooling water, a thermoelectric module, or the like can be used. Additionally, the cooling chamber 4340 can be provided with a lift pin assembly (not shown) for positioning the wafer W over the cooling plate 4342. The housing 4341 is provided (not shown) corresponding to the opening of the indexing robot 4220 and the buffer robot 4350 for the indexing robot 4220 and the second robot 4482 of the second module 4402 (this will be explained below) The wafer W can be transported onto or taken out of the cooling plate 4342. Additionally, the cooling chamber 4340 can be equipped with a door (not shown) for opening and closing the opening.

The processing module 4400 includes a first module 4401 and a second module 4402. The first module 4401 performs a process for processing the wafer W prior to the exposure process, and the second module 4402 performs a process for processing the wafer W after the exposure process. The first and second modules 4401, 4402 are disposed in different layers. For example, the first module 4401 is positioned above the second module 4402. The first module 4401 includes a protective layer coating A chamber 4410, a baking chamber 4420, and a return chamber 4430. The protective layer coating chamber 4410, the baking chamber 4420, and the return chamber 4430 are disposed in this second direction 14 in this order. Therefore, the protective layer coating chamber 4410 and the baking chamber 4420 are spaced apart from each other with the return chamber 4430 interposed therebetween. A plurality of the protective layer coating chambers 4410 are provided and disposed in different layers in the third direction 16. Alternatively, a plurality of the protective layer coating chambers 4410 may be provided in the first and third directions 12, 16. In the third direction 16, a plurality of said baking chambers 4420 are provided in different layers. Alternatively, the baking chamber 4420 can be disposed in the first and third directions 12, 16.

The reflow chamber 4430 is arranged side by side with the first buffer 4320 of the buffer module 4300 in the first direction 12 . The first robot 4432 is positioned within the reflow chamber 4430. The reflow chamber 4430 is generally formed as a square or a rectangle. The first robot 4432 is in the baking chamber 4420, the protective layer coating chamber 4410, the first buffer 4320 of the buffer module 4300, and the first buffer 4520 of the interface module 4500 (hereinafter, this will be The wafer W is transferred between the descriptions. The first robot 4432 includes a hand 4433, an arm 4434, and a support 4435. The hand 4433 is fixedly mounted to the arm 4434. The arm 4434 is configured to expand, contract, and rotate. The arm 4444 is coupled to the support 4435 so as to be linearly movable along the support 4435 in the third direction 16.

The protective layer coating chamber 4410 coats a protective layer on the wafer W to protect the photoresist layer during exposure to lithography in the liquid. The protective layer coating chamber 4410 includes a housing 4411, a support plate 4412, and a nozzle 4413. The outer casing 4411 is formed in a cup shape having an open top end. The support plate 4412 is positioned within the outer casing 4411 and supports the wafer W. The support plate 4412 is rotatably provided. The nozzle 4413 supplies a protective liquid, The protective layer is formed on the wafer W on the support plate 4412. The nozzle 4413 is formed in a circular tube shape, and supplies the protection liquid to the center of the wafer W. Alternatively, the nozzle 4413 can have a length equal to the diameter of the wafer W and can be provided with a slit at one of its outlets. In this case, the support plate 4412 can be provided in a fixed state. The protective liquid contains a foamed material. The protective liquid can be a material that has low affinity with the photoresist and is non-flammable. For example, the protective solution may comprise a fluorochemical solvent. The process of applying the protective liquid by the protective layer coating chamber 4410 starts at a central region of the wafer W while the wafer W on the support plate 4412 rotates.

The baking chamber 4420 is heat-treated to the wafer W on which the protective layer is applied. The baking chamber 4420 has at least one of a cooling plate 4421 and a heating plate 4422. The cooling plate 4421 is provided with a cooling element 4423 such as cooling water or a thermoelectric module. The heating plate 4422 is provided with a heating element 4424, such as a heating wire or a thermoelectric module. Each of the heating plate 4422 and the cooling plate 4421 can be provided in a baking chamber 4420. Alternatively, some of the toasting chambers 4420 may have only the heating plate 4422, while the remaining toasting chambers 4420 may have only the cooling plate 4421. The second module 4402 includes a clean room 4460, a post-exposure bake chamber 4470, and a reflow chamber 4480. The clean room 4460, the reflow chamber 4480, and the post-exposure bake chamber 4470 are arranged in a sequence along a line extending in the second direction 14. Therefore, the clean room 4460 and the post-exposure bake chamber 4470 are spaced apart from each other in the second direction 14, and the reflow chamber 4480 is interposed therebetween. In the third direction 16, a plurality of said clean rooms 4460 are provided and disposed in different layers. Alternatively, a plurality of said clean rooms 4460 can be disposed on each of said first and second directions 12, 16. A plurality of said post-exposure bake chambers 4470 are provided and disposed in different layers along a line extending in the third direction 16. Alternatively, a plurality of said post-exposure baking chambers 4470 are configurable In each of the first and third directions 12, 13.

The reflow chamber 4480 is disposed in parallel with the second buffer 4330 of the buffer module 4300 in the first direction 12 . The reflow chamber 4480 is formed generally as a square or a rectangle. The second robot 4482 is positioned within the reflow chamber 4480. The second robot 4482 is assembled into the second buffer zone 4530 of the post-exposure bake chamber 4470, the clean room 4460, the buffer module 4300, the cooling chamber 4340, and one of the interface modules 4500 (this will be done below) The wafer W is transferred between the instructions). The second robot 4482 provided may have the same structure as the first robot 4432 of the first module 4401 in the second module 4402.

The cleaning chamber 4460 cleans the wafer W after the exposure process. The cleaning chamber 4460 includes a housing 4461, a support plate 4462, and a nozzle 4463. The outer casing 4461 is formed in a cup shape having an open top end. The support plate 4462 is positioned within the outer casing 4461 and supports the wafer W. The support plate 4462 is rotatably provided. The nozzle 4463 supplies cleaning liquid to the wafer W on the support plate 4462. The cleaning liquid can be water, such as deionized water. The cleaning chamber 4460 supplies the cleaning liquid to a central region of the wafer W while rotating the wafer W on the support plate 4462. When the wafer W is rotated, the nozzle 4463 can be linearly moved or rotated from the central region of the wafer W to the peripheral region.

The post-exposure bake chamber 4470 heats the wafer W that has been treated by deep ultraviolet light in the exposure process. By heating the wafer W, the post-exposure bake process accomplishes a characteristic change by increasing the acid produced by exposing the photoresist. The post-exposure bake chamber 4470 has a heating plate 4472. The heating plate 4472 is provided with a heating element 4474, such as a heating wire or a thermoelectric module. The post-exposure chamber 4470 can further include a cooling plate 4471. The cooling plate The 4471 is equipped with a cooling element 4473, such as cooling water and a thermoelectric module. Alternatively, a baking chamber having only the cooling plate 4471 may be additionally provided.

As described above, in the processing module 4400, the first and second modules 4401 and 4402 are completely separated from each other. In addition, the reflow chamber 4430 of the first module 4401 has the same size as the reflow chamber 4480 of the second module 4402, so that they can completely overlap each other when viewed from above. Further, the protective layer coating chamber 4410 has the same size as the cleaning chamber 4460, so that the protective layer coating chamber 4410 and the cleaning chamber 4460 completely overlap each other when viewed from above. Further, the baking chambers 4420 have the same size as the post-exposure baking chamber 4470 so that they completely overlap each other when viewed from above.

The interface module 4500 transfers the wafer W between the processing module 4400 and the exposure unit 9000. The interface module 4500 includes a frame 4510, a first buffer 4520, a second buffer 4530, and an interface robot 4540. The interface robot 4540, the first buffer 4520 and the second buffer 4530 are positioned within the frame 4510. The first and second buffer regions 4520 and 4530 are spaced apart from each other and stacked on each other. The first buffer 4520 is disposed above the second buffer 4530. The first buffer 4520 is disposed at a height corresponding to the first module 4401. The second buffer 4530 is disposed at a height corresponding to the second module 4402. The first buffer 4520 is configured to be in line with the return chamber 4430 of the first module 4401 in the first direction 12 from the top view. The second buffer region 4530 is configured to be in line with the return chamber 4430 of the second module 4402 in the first direction 12 . The interface robot 4540 is spaced from the first and second buffers 4520, 4530 in the second direction 14. The interface robot 4540 is in the first buffer 4520, the second buffer 4530, and the exposure The wafer W is transferred between the cells 9000. The interface robot 4540 has a structure similar to the buffer robot 4530.

The first buffer 4520 temporarily stores the wafer W that has been processed in the first module 4401 before the wafer W is transferred to the exposure unit 9000. The second buffer 4530 temporarily stores the wafer W that has been processed in the exposure unit 9000 before the wafer W is transferred to the second module 4402. The first buffer 4520 has a housing 4521 and a plurality of supports 4522. The supports 4522 are disposed within the outer casing 4521 and are spaced apart from each other in the third direction 16. A wafer W is disposed on each of the supports 4522. The housing 4521 is provided with openings corresponding to the interface robot 4540 and the first robot 4432, respectively, so that the interface robot 4540 and the first robot 4432 can transport the wafer W to the support 4522 in the housing 4521. And removing the wafer W from the support 4522. The second buffer 4530 has a structure similar to the first buffer 4520. However, the outer casing 4531 of the second buffer 4530 is provided with openings (not shown) corresponding to the interface robot 4540 and the second robot 4482, respectively. The number of the supports 4522 of the first buffer 4520 may be the same as or different from the support 4532 of the second buffer 4530.

Hereinafter, a process performed by the pre- and post-exposure processing unit 4000 according to an embodiment will be described with reference to the ninth embodiment. The ninth drawing illustrates a flow chart of a process performed on the wafer W by the pre- and post-exposure processing unit 4000 in accordance with an embodiment. In the fifth diagram, a case will be exemplarily illustrated in which a chemically amplified photoresist is coated on the wafer W, and the exposure unit 9000 performs an exposure process and an exposure lithography in a liquid using a deep ultraviolet light source. Surgery.

The wafer W that has been processed in the coating unit 3000 is loaded in the container 2000. The container 2000 is placed on the loading table 4120 of the pre-exposure processing unit 400 (S212). The door is opened by a door opener (not shown). The indexing robot 4220 takes out the wafer W from the container 2000, and transports the wafer W to the second buffer 4330 of the buffer module 4300 (S214). The buffer robot 4350 transports the wafer W stored in the second buffer 4330 to the first buffer 4320 (S216). The first robot 4432 takes the wafer from the first buffer 4320 and transports the wafer to the protective layer coating chamber 4410 of the processing module 4400 (S218). The protective layer coating chamber 4410 applies a protective layer on the wafer W (S220). Next, the first robot 4432 transfers the wafer W from the protective layer coating chamber 4410 to the baking chamber 4420 (S222). The baking chamber 4420 performs a heat treatment, such as heating and cooling, on the wafer W (S224).

The first robot 4432 takes out the wafer W from the baking chamber 4420, and transports the wafer W to the first buffer 4520 (S226). The interface robot 4540 transports the wafer W from the first buffer 4520 to the exposure unit 9000 (S228). The exposure process for the wafer W is performed in the exposure unit 9000 (S230). Next, the interface robot 4540 transports the wafer W from the exposure unit 9000 to the second buffer 4530 (S232).

The second robot 4482 extracts the wafer W from the support of the second buffer 4530, and transports the wafer W to the cleaning chamber 4460 of the processing module 4400 (S234). The cleaning chamber 4460 supplies cleaning liquid to one surface of the wafer W to perform a cleaning process (S236). When the process of cleaning the wafer W by the cleaning liquid is completed, the second robot 4482 immediately takes out the wafer W from the cleaning chamber 4460, and transports the wafer W to the post-exposure baking chamber 4470 (S238 ). a cleaning liquid attached to the wafer W, borrowed The wafer W is removed by heating the wafer W on the hot plate of the post-exposure baking chamber 4470, and at the same time, the acid generated in the photoresist is amplified to complete the characteristic change of the photoresist (S240).

The second robot 4482 transports the wafer W from the post-exposure baking chamber 4470 to the cooling chamber 4340 of the buffer module 4300 (S242). Cooling of the wafer W is performed in the cooling chamber 4340 (S244). The indexing robot 4220 takes out the wafer W from the cooling chamber 4340, and transports the wafer W to the container 2000 (S246).

The container 2000 is transported to the developing unit 5000, and the developing process is executed in the developing unit 5000.

Some of the protective layer remaining on the wafer W is removed by a developing solution, and the remaining protective layer is removed together with the photoresist during an ashing process.

According to a specific embodiment of the sixth figure, no protective layer removing chamber is provided in the pre-exposure processing unit 4000. Therefore, the structure of the pre- and post-exposure processing unit 4000 is relatively simple, and the time for executing the process can be shortened.

Further, when a chemical amplification type photoresist is used, it is very important to perform the timing setting of the post-exposure baking process after the exposure process is performed. According to a specific embodiment of the sixth embodiment, the post-exposure processing unit 4000 is provided with the post-exposure processing unit 4000. Therefore, acid growth can be quickly achieved in the pre- and post-exposure processing unit 4000 before the wafer W is transferred to the developing unit 5000.

Further, according to the specific embodiment of the sixth figure, the cleaning chamber 4460 performs a cleaning process on the wafer W using only the cleaning liquid. That is, the cleaning chamber 4460 performs a drying process on the wafer W without using a drying gas. The drying of the wafer W is performed by heating the wafer W. For example, in the post-exposure bake chamber 4470, the drying of the wafer W is performed simultaneously with the acid increase. therefore, This processing time can be shortened as compared with the case where the cleaning and drying of the wafer is performed in the cleaning chamber 4460.

Various modified examples of the pre- and post-exposure processing unit 4000 will be described below.

In the above embodiment, the first module 4401 is disposed on the second module 4402. However, the second module 4402 can be disposed on the first module 4401.

In addition, the processing module 4400 may include only one module instead of the first and second modules 4401 and 4402 disposed in different layers. In this case, the protective layer coating chamber 4410, the baking chamber 4420, the cleaning chamber 4460, and the post-exposure baking chamber 4470 may all be provided in the module.

Further, in addition to the nozzle for supplying the cleaning liquid, the cleaning chamber 4460 may further include a nozzle for supplying the drying gas. In this case, the cleaning liquid attached to the wafer W may be removed before the wafer W is heated in the post-exposure baking chamber 4470.

Additionally, a cooling plate may not be provided in the second module 4402. The cooling of the wafer W can be achieved only in the cooling chamber 4340 of the buffer module 4300. In this case, a plurality of the cooling chambers 4340 may be disposed in the buffer module 4300 and stacked on each other.

Additionally, the cooling chamber 4340 may not be provided in the buffer module 4300. In this case, the wafer W cooled in the second module 4402 is directly transferred to the second buffer 4330 by the second robot 4482, and the indexing robot 4220 will be stored in the second buffer. The wafer W in 4330 is transferred to the container 2000.

In addition, the locations of the second buffer 4330 of the cooling chamber 4340 in the buffer module 4300 can be exchanged.

Moreover, the locations of the first and second modules 4401 and 4402 are interchangeable. In this case, the cooling unit in the buffer module 4300 can be selectively provided at a height corresponding to the second module 4402.

In addition, the buffer module 4300 can have the same height as the processing module 4400. In this case, the indexing robot 4220 can transfer the wafer directly to the first buffer 4320.

Additionally, a protective layer removal chamber may be provided in the second module 4402 for removing the protective layer after the exposure process. In this case, the protective layer on the wafer W can be removed prior to the etching process.

In addition, when the exposure unit 9000 performs a process using a method other than the exposure lithography method in the liquid, the protective layer coating unit 3000 may not be provided in the first module 4401. In this case, the baking chamber 4420 may not be provided. In this case, the processing module 4400 can only include the second module 4402 without the first module 4401.

In addition, when the exposure unit 9000 uses a light source other than the deep ultraviolet light source, the post-exposure baking chamber 4470 may not be provided in the second module 4402.

(development unit)

The tenth to twelfth drawings are schematic schematic views of the developing unit 5000. That is, the tenth image is a view when the image forming unit 5000 is viewed from above, and the eleventh image is a view when the image forming unit 5000 is viewed from a direction "E", and the twelfth image is the image forming unit 5000. A view in the direction of "F" view.

Referring to the tenth to twelfth drawings, the image forming unit 5000 includes a loading port 5100, an indexing module 5200, a buffer module 5300, and a processing module 5400. The loading port 5100, the indexing module 5200, and the buffer module The 5300 and the processing module 5400 are disposed in the first direction 12 in order. The load port 5100 has a loading table 5120 on which a container 2000 for accommodating the wafer W is disposed. A plurality of the loading stations 5120 are provided and arranged on a line extending in the second direction 14. In the tenth figure, four loading stations 5120 are provided.

The indexing module 5200 transfers the wafer W between the container 2000 on the loading platform and the buffer module 5300. The indexing module 5200 includes a frame 5210, an indexing robot 5220, and a guide rail 5230. The frame 5210 is formed in an empty rectangular parallelepiped shape and disposed between the loading port 5100 and the buffer module 5300. The frame 5210 can be provided lower than one of the frames 5310 of the buffer module 5300 (which will be described below). The indexing robot 5220 and the guide rail 5230 are disposed in the frame 5210. The indexing robot 5220 has a 4-axis drive structure such that a hand 5221 that directly processes the wafer W can rotate and move in the first, second, and third directions 12, 14, 16. In addition to the hand 5221, the indexing robot 5220 further includes an arm 5222, a support 5223, and a base 5224. The arm 5222 is provided to be expandable and retractable so that the hand 5222 can be moved in a horizontal direction. The support 5223 is arranged to facilitate its lengthwise extension in the third direction 16. The arm 5222 is coupled to the support 5223 so as to be movable along the support 5223. The guide rail 5230 is provided to facilitate its lengthwise extension in the second direction 14. The support 5223 is fixedly coupled to the base 5224. The base 5224 is coupled to the rail 5230 so as to be linearly movable along the rail 5230. Although not shown in the drawings, the frame 5210 is equipped with a door opener for opening and closing the door of the container 2000.

Referring to FIG. 11 , the buffer module 5300 includes a frame 5310 , a first buffer 5320 , a second buffer 5330 , and a first cooling chamber 5340 . A second cooling chamber 5350 and a buffer robot 5360. The frame 5310 is formed in an empty rectangular parallelepiped shape. The frame 5310 is disposed between the indexing module 5200 and the processing module 5400. The first buffer 5320, the second buffer 5330, the first cooling chamber 5340, the second cooling chamber 5350, and the buffer robot 5360 are disposed in the frame 5310. The second cooling chamber 5350, the second buffer region 5330, the first cooling chamber 5340, and the first buffer region 5320 are arranged in the third direction 16 in the upward direction. The first cooling chamber 5340 and the first buffer 5320 are positioned at the same height as the first module 5401 (described below) of the processing module 5400. The second cooling chamber 5350 and the second buffer 5330 are positioned at the same height as the second module 5402 of the processing module 5400 (which will be described later). The buffer robot 5360 is positioned to be spaced apart from the second buffer 5330, the second cooling chamber 5350, the first buffer 5320, and the first cooling chamber 5340 by a predetermined distance in the second direction 14.

Each of the first and second buffers 5320, 5330 temporarily stores a plurality of the wafers W. The second buffer 5330 includes a housing 5331 and a plurality of supports 5332. The supports 5332 are disposed in the outer casing 5331 and are spaced apart from each other in the third direction 16. A wafer W is disposed on each of the supports 5332. The housing 5331 is equipped with an opening (not shown) corresponding to the indexing robot 5220, the buffer robot 5360, and the second robot 5482, so that the indexing robot 5220, the buffer robot 5360, and the second module 5402 A second robot 5482 (which will be described below) can transport the wafer to the support 5332 or remove the wafer from the support 5332. The first buffer 5320 has a structure similar to the second buffer 5330. However, the outer casing 5321 of the first buffer 5320 is equipped with the corresponding buffer robot 5360 and the first An opening of one of the first robots 5432 (described below) on the module 5401. The number of the supports 5322 of the first buffer 5320 may be the same as or different from the number of the supports 5332 of the second buffer 5330. For example, the number of the second buffers 5330 of the support 5332 may be greater than the number of the supports 5322 of the first buffer 5320.

The buffer robot 5360 transfers the wafer W between the first and second buffers 5320 and 5330. The buffer robot 5360 includes a hand 5361, an arm 5362, and a support 5363. The hand 5361 is fixedly mounted to the arm 5362. The arm 5362 is configured to expand and contract so that the hand 5361 can move in the second direction 14. The arm 5362 is coupled to the support 5363 so as to be linearly movable along the support 5363 in the third direction 16. The support 5363 has a length that extends from a position corresponding to the second buffer 5330 to a position corresponding to the first buffer 5320. The support 5363 can further extend to a position corresponding to the second buffer 5325 or a position corresponding to the first buffer 5320. The buffer robot 5360 can be assembled to have a 2-axis drive structure such that the hand 5361 moves only in the second and third directions 14, 16.

The first and second cooling chambers 5340, 5350 cool the wafer W. The first cooling chamber 5340 has the same structure as the second cooling chamber 5350. The second cooling chamber 5350 has a housing 5351 and a cooling plate 5352. The cooling plate 5352 has a top surface on which the wafer W is disposed, and a cooling unit 5353 for cooling the wafer W. The cooling element 5353 can be formed from various components such as cooling water, a thermoelectric module, and the like. Additionally, the second cooling chamber 5350 can be provided with a lift pin assembly (not shown) for positioning the wafer W over the cooling plate 5352. The housing 5351 is equipped with a corresponding corresponding to the indexing robot 5220 and the second robot 5482 An opening (not shown) for the indexing robot 5220 and the second robot 5482 of the second module 5402 (described below) to transport the wafer W onto the cooling plate 5352, or The cooling plate 5352 takes out the wafer W. Additionally, the second cooling chamber 5350 can have a door (not shown) for opening and closing the opening.

The processing module 5400 performs a required process before the wafer W is transferred to the pre- and post-exposure processing unit 4000. The processing module is formed substantially in the shape of a rectangular parallelepiped. The processing module 5400 includes a first module 5401 and a second module 5402. The first and second modules 5401, 5402 are configured in different layers. The first and second modules 5401, 5402 can be provided to perform an identical process. For example, the first module 5401 is positioned above the second module 5402.

The first module 3401 includes a developing chamber 5410, a baking chamber 5420, and a reflow chamber 5430. The developing chamber 5410, the baking chamber 5420, and the return chamber 5430 are disposed in the second direction 14 in this order. Therefore, the developing chamber 5410 and the baking chamber 5420 are spaced apart from each other in the second direction 14, and the return chamber 5430 is interposed therebetween. A plurality of the imaging chambers 5410 are disposed on each of the first and third directions 12, 16. In the drawings, six developing chambers 5410 are exemplarily provided. A plurality of the baking chambers 5420 are disposed on each of the first and third directions 12, 16. In the drawings, six baking chambers 5420 are illustratively provided. However, six or more baking chambers 5420 can be provided.

The return chamber 5430 and the first buffer 5320 of the buffer module 5300 are positioned side by side in the first direction 12 . The first robot 5432 and the guide rail 5433 are disposed in the return chamber 5430. The reflow chamber 5430 is generally formed in a rectangular shape. The first robot 5432 is displayed in the baking room 5320 The wafer W is transferred between the image chamber 5400, the first buffer 5320, and the first cooling chamber 5340. The guide rail 5433 has a length direction extending in the first direction 12. The guide rail 5433 guides the linear motion of the first robot 5432 in the first direction 12. The robot 5432 has a hand 5434, an arm 5453, a support 5436 and a base 5437. The hand 5434 is fixedly mounted to the arm 5435. The arm 5435 is assembled to expand and contract so that the hand 5434 can move in a horizontal direction. The support 5436 is configured to facilitate its lengthwise extension in the third direction 16. The arm 5435 is coupled to the support 5436 so as to be linearly movable along the support 5436 in the third direction 16. The support 5436 is fixedly coupled to the base 5437 and the base 5437 is coupled to the rail 5433 so as to be movable along the rail 5433.

All of the developing chambers 5410 have the same structure. However, the types of developing solutions used in the developing chamber 5410 may be different from each other. The developing chamber 5410 removes an exposed portion of the photoresist. Here, the exposed portions of one of the protective layers are also removed together. The unexposed portion of the photoresist and the unexposed portion of the protective layer are selectively removed depending on the type of developing solution used.

The imaging chamber 5410 includes a housing 5411, a support plate 5412, and a nozzle 5413. The outer casing 5411 is formed in a cup shape having an open top end. The support plate 5412 is positioned in the outer casing 3411 to support the wafer W. The support plate 3412 is assembled to be rotatable. The nozzle 5413 supplies the developing solution to the wafer W on the support plate 5412. The nozzle 5412 is formed in a circular tube shape to supply a developing solution to the center of the wafer W. Alternatively, the nozzle 5412 can have a length corresponding to the diameter of the wafer W and have a slit-type outlet. In addition, the developing chamber 5410 may further include a nozzle 5414 for supplying a cleaning liquid such as deionized water for cleaning. A surface of the wafer W on which the photoresist is applied.

The baking chamber 5420 heats the wafer W. For example, the baking chamber 3420 performs a post-baking process for heating the wafer W before the developing process, and performing a hard baking process for heating the wafer W after the developing process. And performing a cooling process performed after the respective baking processes. The baking chamber 5420 includes a cooling plate 5421 or a heating plate 5422. The cooling plate 5421 is provided with a cooling element 5423 such as a cooling water or thermoelectric module. The heating plate 5422 is provided with a heating element 5424, such as a heating wire or a thermoelectric module. The heating plate 5422 and the cooling plate 5421 can be provided in respective baking chambers 5420. Alternatively, some of the baking chambers 5420 may have only the heating plate 5422, while the rest may have only the cooling plate 5421.

The second module 5402 includes a developing chamber 5460, a baking chamber 5470, and a return chamber 5480. The developing chamber 5460, the baking chamber 5470, and the reflow chamber 5480 have the same structure and arrangement as the developing chamber 5410, the baking chamber 5420, and the reflow chamber 5430 of the first module 5401. In addition, the reflow chamber 5480 has a second robot 5482 having the same structure as the first robot 3432 of the first module 3401. The second robot 5482 is assembled to transport the wafer W between the developing chamber 5460, the baking chamber 5470, the second buffer 5330, and the second cooling chamber 5350.

In the above processing module 3400, the first and second modules 3401, 3402 are separated from each other. In addition, the first module 3401 has the same structure and configuration as the second module when viewed from above.

A process executed by the developing unit 5000 of the tenth embodiment will be described below with reference to FIGS. 13A and 13B. 13A and 13B are flowcharts showing a process performed on the wafer W by the developing unit 5000 according to an embodiment.

A container 2000 for accommodating the wafer W is provided on the loading table 5120 of the loading port 5100 (S312). The door of the container 2000 is opened by the door opener. The indexing robot 5220 takes out the wafer W from the container 2000, and transports the wafer W to the second buffer area 5330 (S314). The wafer W is transferred to one of the first and second modules 5401, 5402.

When the wafer W is selected to be processed in the first module 5401, the buffer robot 5360 transports the wafer W stored in the second buffer 5330 to the first buffer 5320 (S320). The first robot 5432 takes out the wafer W from the first buffer 5320, and transports the wafer W to the baking chamber 5420 (S322). The baking chamber 5420 sequentially performs a post-drying process and a cooling process (S324). The first robot 5432 takes out the wafer W from the baking chamber 5420, and transports the wafer W to the developing chamber 3410 (S326). The developing chamber 5410 applies the developing solution onto the wafer W (S328). Next, the first robot 5432 transports the wafer W from the developing chamber 5410 to the baking chamber 5420 (S330). The baking chamber 5420 performs the hard baking process on the wafer W (S332).

The first robot 5432 takes the wafer from the baking chamber 5420 and transports the wafer to the first cooling chamber 5340 (S334). The first cooling chamber 5340 performs a process for cooling the wafer W (S336). The indexing robot 5220 takes the wafer from the first cooling chamber 5340 and transports the wafer to the container 2000 (S338).

When the wafer W is selected to be processed in the second module 5402, the second robot 5482 extracts the wafer W from the second buffer 5330 and transports the wafer W to the second module 5402. Baking chamber 5470 (S360). The baking chamber 5470 sequentially performs a post-drying process and a cooling process (S362). The second robot 5482 extracts the wafer W from the baking chamber 5470 and the wafer W is transported to the developing room 5460 (S364). In the developing chamber 5460, the developing solution is applied onto the wafer W (S366). Next, the second robot 5482 transports the wafer W from the developing chamber 5460 to the baking chamber 5470 (S368). The baking chamber 5470 performs a hard baking process on the wafer W (S370).

The second robot 5482 extracts the wafer W from the baking chamber 5470 and transports the wafer W to the second cooling chamber 5350 (S372). The second cooling chamber 5350 performs a cooling process on the wafer W (S374). The indexing robot 5220 transports the wafer W from the second cooling chamber 5350 to the container 2000 (S376).

Various modified examples of the developing unit 5000 will be described below.

The processing module 5400 may include only one module instead of the first and second modules 5401, 5402 disposed in different layers.

In addition, a plurality of first cooling chambers 5340 and a plurality of second cooling chambers 5350 are stacked on each other in the indexing module 5200.

Further, the first and second cooling chambers 5340, 5350 may not be provided in the buffer module 5300. In this case, the wafer W can be directly transferred from the first module 5401 to the first buffer 5320 by the first robot 5432, and the indexing robot 5220 can be stored in the first buffer 5320. The wafer W is transported to the container 2000. In addition, the wafer W can be directly transferred from the second module 5402 to the second buffer 5330 by the second robot 5482, and the indexing robot 5220 can store the second buffer 5330 in the second buffer 5330. The wafer W is transported to the container 2000.

In addition, in the buffer module 5300, the positions of the first buffer 5320 and the first cooling chamber 5340 can be exchanged. In the buffer module 5300, the positions of the second buffer 5330 and the second cooling chamber 5350 may also be exchanged.

In addition, the buffer module 5300 can have the same height as the processing module 5400. In this case, the indexing robot 5220 can directly transport the wafer W to the first buffer zone 5320.

Additionally, other processes than the ones described above can be performed in the processing module 5400.

According to a specific embodiment of the first figure, the substrate processing apparatus is designed to facilitate separately providing a process for performing the coating process, a unit for performing the development process, and being connected in line with the exposure unit 9000 to perform the Units for pre-exposure/post-exposure processing. Therefore, unlike the apparatus in which one of the modules for simultaneously performing the coating and developing process is disposed in line with the exposure unit 9000, the coating and developing unit of the substrate processing system of the first embodiment of the first embodiment 3000, 5000 can continuously perform its process (even when it takes a long time to perform the process in the exposure unit 9000 and thus the wafer W is jammed).

The fourteenth A and fourteenth G diagrams illustrate a sequential process for forming a pattern on a film formed on the wafer W.

First, a film 102 is deposited on the wafer W in a deposition unit (not shown) (see Fig. 14A). This wafer W is transferred to the coating unit 3000. In the coating unit 3000, a photoresist 104 is coated on the wafer W (see FIG. 14B). In the coating unit 3000, other processes such as a baking process, an edge exposure process, and the like are further processed. Next, the wafer W is transferred to the pre- and post-exposure processing unit 4000. In the first module 4401 of the pre- and post-exposure processing unit 4000, the protective layer 106 is coated on the wafer W (see FIG. 14C). As described above, other processes, such as a baking process, and the like are further performed in the first module 4401. The wafer W is transported to the exposure unit 9000. The exposure unit 9000 irradiates light to the protective layer 106 and a selected region 108 on the photoresist 104 to change the characteristics of the selected region 108 (see FIG. 14D). The second module 4402 of the pre- and post-exposure processing unit 4000 performs a cleaning process, a post-exposure bake process, and the like. During the post-exposure baking process, the cleaning liquid remaining on the wafer W is removed. Next, the wafer W is transferred to the developing unit 5000. In the developing unit 5000, the protective layer 106 whose characteristics are changed and the selected region 108 of the photoresist 104 are removed (see FIG. 14E). As described above, in addition to the developing process, the developing unit 5000 further performs other processes such as a baking process, and the like. Next, the wafer W is transferred to an etching unit (not shown). In the etching unit, the exposed region 103 of the film is removed (see FIG. 14F). Next, the wafer W is transferred to an ashing unit (not shown). In the ashing unit, the photoresist 104 and the protective layer 106 remaining on the film are removed (see FIG. 14G). When the wafer is transferred between the deposition unit, the coating unit 3000, the pre-exposure processing unit 4000, the developing unit 5000, the etching unit, and the ashing unit, other processes may be further performed, such as For the process of cleaning the wafer W, and the like.

According to the specific embodiment, the lithography process can be performed efficiently.

Further, the yield ratio in the coating unit and the developing unit can be increased.

Further, when a chemically amplified photoresist is used, the post-exposure baking process can be quickly performed.

Further, since the cleaning liquid remaining on the substrate can be removed by increasing the acid in the post-exposure baking unit without using a separate drying nozzle in the cleaning chamber, the processing time can be shortened.

In addition, since the protective layer is removed in the developing process and the ashing process, There is no need to use a separate protective removable chamber in the pre- and post-exposure processing unit, so the processing time can be shortened.

The above-disclosed subject matter is intended to be illustrative, and not restrictive, and the scope of the appended claims. The scope of the present invention is to be construed as being limited by the claims

1‧‧‧Substrate processing system

12‧‧‧First direction

14‧‧‧second direction

16‧‧‧ Third direction

102‧‧‧film

103‧‧‧Exposure area

104‧‧‧ photoresist

106‧‧‧Protective layer

108‧‧‧Selected areas

1000‧‧‧Automatic transfer unit

2000‧‧‧ Container

3000‧‧‧ Coating unit

3100‧‧‧Load port

3120‧‧‧Loading station

3200‧‧‧Dimension Module

3210‧‧‧Frame

3220‧‧‧ Indexing robot

3221‧‧‧Hand

3222‧‧‧ Arm

3223‧‧‧Support

3224‧‧‧Base

3230‧‧‧rails

3300‧‧‧ buffer module

3310‧‧‧Frame

3320‧‧‧ first buffer

3321‧‧‧Shell

3322‧‧‧Support

3330‧‧‧second buffer zone

3331‧‧‧Shell

3332‧‧‧Support

3340‧‧‧First cooling room

3350‧‧‧Second cooling room

3351‧‧‧Shell

3352‧‧‧Cooling plate

3353‧‧‧Cooling elements

3360‧‧‧ Buffer Robot

3361‧‧‧Hand

3362‧‧‧ Arm

3363‧‧‧Support

3400‧‧‧Processing module

3401‧‧‧ first module

3402‧‧‧ second module

3410‧‧‧Photoresist coating room

3411‧‧‧Shell

3412‧‧‧Support plate

3413‧‧‧Nozzles

3414‧‧‧Nozzles

3420‧‧‧Basic room

3421‧‧‧Cooling plate

3422‧‧‧heating plate

3423‧‧‧Cooling elements

3424‧‧‧ heating element

3430‧‧‧Return room

3432‧‧‧First robot

3433‧‧‧rail

3434‧‧‧Hand

3435‧‧‧ Arm

3436‧‧‧Support

3437‧‧‧Base

3453‧‧‧ Arm

3460‧‧‧ photoresist coating room

3470‧‧ ‧ baking room

3480‧‧‧Return room

3482‧‧‧Second robot

3500‧‧‧Edge exposure module

3510‧‧‧Frame

3520‧‧‧First buffer zone

3530‧‧‧second buffer zone

3540‧‧‧First cooling room

3550‧‧‧Second cooling room

3560‧‧‧Edge Exposure Robot

3570‧‧‧First Edge Exposure Room

3580‧‧‧Second edge exposure room

4000‧‧‧Pre-exposure processing unit

4100‧‧‧Load port

4120‧‧‧Loading station

4200‧‧‧Dimension Module

4210‧‧‧Frame

4220‧‧‧ Indexing robot

4221‧‧‧Hand

4222‧‧‧ Arm

4223‧‧‧Support

4224‧‧‧Base

4230‧‧‧rail

4300‧‧‧buffer module

4310‧‧‧Frame

4320‧‧‧ first buffer

4321‧‧‧ Shell

4322‧‧‧Support

4330‧‧‧second buffer zone

4331‧‧‧Shell

4332‧‧‧Support

4340‧‧‧Cooling room

4341‧‧‧Shell

4342‧‧‧Cooling plate

4343‧‧‧Cooling element

4360‧‧‧ Buffer Robot

4361‧‧‧Hand

4362‧‧‧ Arm

4363‧‧‧Support

4400‧‧‧Processing Module

4401‧‧‧ first module

4402‧‧‧ second module

4410‧‧‧Protective coating room

4411‧‧‧Shell

4412‧‧‧Support board

4413‧‧‧Nozzles

4420‧‧ ‧ baking room

4421‧‧‧Cooling plate

4422‧‧‧heating plate

4423‧‧‧Cooling elements

4424‧‧‧ heating element

4430‧‧‧Return room

4432‧‧‧First robot

4433‧‧‧Hand

4434‧‧‧ Arm

4435‧‧‧Support

4460‧‧‧Clean room

4461‧‧‧Shell

4462‧‧‧Support board

4463‧‧‧Nozzles

4470‧‧‧After exposure baking room

4471‧‧‧Cooling plate

4472‧‧‧heating plate

4473‧‧‧Cooling element

4474‧‧‧ heating element

4480‧‧‧Return room

4482‧‧‧Second robot

4500‧‧‧Interface module

4510‧‧‧Frame

4520‧‧‧First buffer zone

4521‧‧‧Shell

4522‧‧‧Support

4530‧‧‧second buffer zone

4531‧‧‧Shell

4532‧‧‧Support

4540‧‧‧Interface robot

5000‧‧‧Dynamic unit

5100‧‧‧Load port

5120‧‧‧Loading station

5200‧‧‧Dimension Module

5210‧‧‧Frame

5220‧‧‧ Indexing robot

5221‧‧‧Hand

5222‧‧‧ Arm

5223‧‧‧Support

5224‧‧‧Base

5230‧‧‧rail

5300‧‧‧buffer module

5310‧‧‧Frame

5320‧‧‧ first buffer

5321‧‧‧Shell

5322‧‧‧Support

5330‧‧‧second buffer zone

5331‧‧‧Shell

5332‧‧‧Support

5340‧‧‧First cooling room

5350‧‧‧Second cooling room

5351‧‧‧Shell

5352‧‧‧Cooling plate

5353‧‧‧Cooling unit

5360‧‧‧ Buffer Robot

5361‧‧‧Hand

5362‧‧‧ Arm

5363‧‧‧Support

5400‧‧‧Processing module

5401‧‧‧ first module

5402‧‧‧ second module

5410‧‧‧ Imaging room

5411‧‧‧Shell

5412‧‧‧Nozzles

5413‧‧‧Nozzles

5414‧‧‧Nozzles

5420‧‧‧Basic room

5421‧‧‧Cooling plate

5422‧‧‧heating plate

5423‧‧‧Cooling elements

5424‧‧‧ heating element

5430‧‧‧Return room

5432‧‧‧First robot

5433‧‧‧rail

5434‧‧‧Hand

5435‧‧‧ Arm

5436‧‧‧Support

5437‧‧‧Base

5453‧‧‧ Arm

5460‧‧‧ Imaging room

5470‧‧・Bake room

5480‧‧‧Return room

9000‧‧‧Exposure unit

A‧‧‧ Direction "A"

B‧‧‧ Direction "B"

C‧‧‧ Direction "C"

D‧‧‧ Direction "D"

E‧‧‧ Direction "E"

F‧‧‧ Direction "F"

W‧‧‧ wafer

The accompanying drawings are included to provide a further understanding of the invention The drawings illustrate the exemplary embodiments of the invention and, together with the In the drawings: the first drawing is a schematic diagram of a substrate processing system according to the present invention; the second to fourth figures are schematic diagrams of a coating unit according to the present invention; the fifth to fifth figures b The flow chart of the continuous process performed in the coating unit of the second figure is shown; the sixth to eighth figures are schematic diagrams of the post-exposure baking unit according to the present invention; the ninth figure is illustrated in the sixth figure. A flow chart of a continuous process performed in a coating unit; tenth to twelfth drawings are schematic schematic views of a developing unit according to the present invention; and FIGS. 13A to 13B are diagrams executed in the tenth A flow chart of a continuous process in the image forming unit of the figure; Figures 14A through 14G illustrate schematic views of a continuous process for forming a pattern on a wafer.

12‧‧‧First direction

14‧‧‧second direction

2000‧‧‧ Container

4000‧‧‧Pre-exposure processing unit

4100‧‧‧Load port

4120‧‧‧Loading station

4200‧‧‧Dimension Module

4210‧‧‧Frame

4220‧‧‧ Indexing robot

4221‧‧‧Hand

4222‧‧‧ Arm

4223‧‧‧Support

4224‧‧‧Base

4230‧‧‧rail

4300‧‧‧buffer module

4310‧‧‧Frame

4320‧‧‧ first buffer

4360‧‧‧ Buffer Robot

4361‧‧‧Hand

4362‧‧‧ Arm

4363‧‧‧Support

4400‧‧‧Processing Module

4410‧‧‧Protective coating room

4411‧‧‧Shell

4412‧‧‧Support board

4413‧‧‧Nozzles

4421‧‧‧Cooling plate

4422‧‧‧heating plate

4432‧‧‧First robot

4434‧‧‧ Arm

4435‧‧‧Support

4500‧‧‧Interface module

4510‧‧‧Frame

4520‧‧‧First buffer zone

4540‧‧‧Interface robot

9000‧‧‧Exposure unit

C‧‧‧ Direction "C"

D‧‧‧ Direction "D"

W‧‧‧ wafer

Claims (15)

An pre-exposure processing unit for performing a required process on a substrate on which a photoresist is applied before and after an exposure process, the pre-exposure processing unit comprising: a loading port on which a housing is disposed a container of the substrate; an indexing module, the substrate is taken out from the container, or the substrate is transported to the container; and a processing module is configured to perform a process on the substrate, including: a module and a second module, and a cleaning chamber, wherein the cleaning chamber is disposed in the second module for cleaning the substrate; and an interface module is coupled to an exposure unit, wherein the The loading port, the indexing module, the processing module and the interface module are sequentially disposed in a first direction; the processing module includes a protective layer coating chamber, and the protective layer coating chamber is used for a protective layer is coated on the substrate, and the protective layer coating chamber is disposed in the first module; wherein a portion of the protective layer remaining on the processed substrate is removed by a developing solution, and The remaining protective layer is associated with the photoresist Removed together. The pre- and post-exposure processing unit of claim 1, wherein the processing module further comprises a baking chamber for heat treating the substrate. The pre- and post-exposure processing unit of claim 1, wherein the processing module further comprises an exposure post-baking chamber for performing an exposure post-baking process on the exposed substrate. . Pre- and post-exposure processing order as described in item 1 of the patent application scope The processing module includes: a baking chamber disposed in the first module and configured to heat the substrate; a first robot disposed in the first module and configured to be used in a substrate is transferred between the protective layer coating chamber and the baking chamber; a post-exposure baking chamber is disposed in the second module, and is configured to perform an exposure post-baking process on the exposed substrate; a second robot disposed in the second module and configured to transfer the substrate between the cleaning chamber and the post-exposure baking chamber. The pre- and post-exposure processing unit of claim 1, further comprising a buffer module disposed between the indexing module and the processing module, wherein the buffer module comprises: a first buffer disposed at a height corresponding to the first module and temporarily storing the substrate; and a second buffer disposed at a height corresponding to the second module and temporarily storing the substrate . The pre- and post-exposure processing unit of claim 5, wherein the first and second buffers are stacked on each other, and each of the first and second buffers includes a plurality of supports. The substrate is separately disposed on the support. The pre- and post-exposure processing unit of claim 6, wherein the buffer module further comprises a buffer robot for transferring the substrate between the first and second buffers. The pre- and post-exposure processing unit of claim 7, wherein the first and second buffers are arranged side by side in a vertical direction. The pre- and post-exposure processing unit of claim 5, wherein the buffer module is disposed at a height corresponding to the first module, and further includes a cooling chamber for cooling the substrate. The pre- and post-exposure processing unit of claim 1, wherein the interface module comprises: a first buffer region disposed at a height corresponding to the first module and temporarily storing the substrate; a buffer disposed at a height corresponding to the second module and temporarily storing the substrate; and an interface robot for being used between the first buffer and the exposure unit and in the second buffer The substrate is transferred between the exposure units. The pre- and post-exposure processing unit of claim 10, wherein the first and second buffers are stacked on each other, and each of the first and second buffers includes a plurality of supports. The substrate is separately disposed on the support. An exposure before and after processing unit for performing a required process on a substrate on which a photoresist is applied before and after an exposure process, the pre-exposure processing unit comprising: a loading port on which a housing is disposed a container of the substrate; an indexing module that takes the substrate from the container or transports the substrate to the container; a processing module that performs a process on the substrate; and a buffer module that is disposed on the indexing Between the module and the processing module; and an interface module connected to an exposure unit, wherein the loading port, the indexing module, the buffer module, and the processing The module and the interface module are sequentially disposed in a first direction; and the processing module includes a first module and a second module disposed on different layers, wherein the first module includes: a protective layer a coating chamber for applying a protective layer on the substrate; a baking chamber that heats the substrate; and a reflow chamber having a first robot for the protection The substrate is transferred between the layer coating chamber, the baking chamber, the buffer module, and the interface module, and the second module comprises: a cleaning chamber for cleaning the substrate; and baking after exposure a chamber for performing an exposure post-baking process; and a reflow chamber having a second robot for the cleaning chamber, the post-exposure baking chamber, and the buffer module And transferring the wafer between the interface modules. The pre- and post-exposure processing unit according to claim 12, wherein the protective layer coating chamber, the reflow chamber equipped with the first robot, and the baking chamber are sequentially disposed in a second direction; The cleaning chamber, the reflow chamber equipped with the second robot, and the post-exposure baking chamber are sequentially disposed in the second direction. The pre- and post-exposure processing unit of claim 13, wherein the first module is disposed on the second module; the buffer module includes: a first buffer disposed on the one corresponding to The height of the first module is used for temporarily storing the substrate; and a cooling chamber, The first buffer region and the cooling chamber are arranged side by side in a vertical direction; and the first buffer is configured to be configured in a vertical direction from above when viewed from above In the first direction, it is in line with the return chamber of the first module. The pre- and post-exposure processing unit of claim 14, wherein the buffer module further comprises: a second buffer disposed at a height corresponding to the second module and temporarily storing the substrate; a buffer robot for transferring the substrate between the first and second buffers, wherein the first buffer and the buffer robot are disposed in a direction perpendicular to the first direction when viewed from above In the second direction.