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TWI496324B - 發光二極體封裝體 - Google Patents

發光二極體封裝體 Download PDF

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Publication number
TWI496324B
TWI496324B TW099106571A TW99106571A TWI496324B TW I496324 B TWI496324 B TW I496324B TW 099106571 A TW099106571 A TW 099106571A TW 99106571 A TW99106571 A TW 99106571A TW I496324 B TWI496324 B TW I496324B
Authority
TW
Taiwan
Prior art keywords
substrate
emitting diode
layer
light emitting
disposed
Prior art date
Application number
TW099106571A
Other languages
English (en)
Other versions
TW201117438A (en
Inventor
Kuo Ching Chang
Wu Cheng Kuo
Tzu Han Lin
Original Assignee
Semileds Optoelectronics Co
Visera Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semileds Optoelectronics Co, Visera Technologies Co Ltd filed Critical Semileds Optoelectronics Co
Publication of TW201117438A publication Critical patent/TW201117438A/zh
Application granted granted Critical
Publication of TWI496324B publication Critical patent/TWI496324B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Description

發光二極體封裝體
本發明係有關於一種發光二極體封裝體，特別有關於一種改善基底與發光二極體晶片之間接合強度的發光二極體封裝體。
發光二極體(light-emitting diode，簡稱LED)在人類的日常生活中扮演越來越重要的角色，其可以提供可靠且高亮度的光源，因此可應用在顯示裝置、交通號誌、指示燈元件以及其他的電子裝置上。發光二極體的製造是在基底上沈積n型摻雜的半導體層、主動層以及p型摻雜的半導體層而形成。在一些發光二極體中，於元件的一側形成n型接點，並在元件的另一相反側形成p型接點；在其他的發光二極體中，則在元件的同一側形成兩種接點。
在傳統的發光二極體封裝方法中，發光二極體晶片以導線架(lead frame)封裝技術封裝，其中發光二極體晶片藉由銀膠固定在導線架的表面上。導線架由塑膠材料製成，且具有設置在導線架底部表面上的導電墊，接著，經由導電墊與印刷電路板之間的焊球(solder ball)將導線架接合至印刷電路板上。然而，由於銀膠所提供的接合強度通常不足夠，因此發光二極體晶片會從導線架分離，並因此而降低發光二極體封裝體的信賴性。此外，銀膠無法使得發光二極體元件在操作期間所產生的熱有效地消散，因此，發光二極體元件的效能會受到阻礙。
在其他傳統的發光二極體封裝方法中，發光二極體晶片係經由共晶接合(eutectic bonding)方式固定在導線架的表面上，例如使用錫金焊料(Sn-Au solder)實施共晶接合，在這種發光二極體封裝體中，發光二極體晶片的磊晶層是形成於矽基底上。雖然錫金焊料具有較銀膠高的接合強度，但是其製造成本較高。
因此，業界亟需一種可以克服上述問題的發光二極體封裝體。
本發明係提供一種發光二極體封裝體，其經由在基底與發光二極體晶片之間提供較高的接合強度，而提升發光二極體封裝體的信賴性，並經由改善發光二極體封裝體的散熱效率，而提升發光二極體元件的效能。
在一實施例中，發光二極體封裝體包括基底以及設置於基底之上的第一金屬層，焊料層設置於第一金屬層上，然後，發光二極體晶片設置於焊料層上，其中發光二極體晶片包括導電基底以及形成於導電基底上的多層磊晶結構，且其中導電基底鄰接焊料層而設置。在此發光二極體封裝體中，發光二極體晶片的導電基底與基底上的第一金屬層以回焊製程焊接至焊料層。
在一實施例中，焊料層可由錫銅合金(Sn-Cu alloy)製成，發光二極體晶片的導電基底可由銅製成，且基底上的第一金屬層可由銀或金製成。依據本發明之一實施例，發光二極體晶片與基底之間的接合強度較傳統的封裝方法 高。
為了讓本發明之上述目的、特徵、及優點能更明顯易懂，以下配合所附圖式，作詳細說明如下：
本發明提供一種發光二極體封裝體，其在基底與發光二極體晶片之間具有高的接合強度，且具有高的散熱效率。第1圖係顯示依據本發明之一實施例，發光二極體封裝體的平面示意圖，如第1圖所示，發光二極體晶片300設置於基底100的空穴(cavity)102內，在一實施例中，發光二極體晶片300可以是垂直式(vertical)發光二極體晶片，在發光二極體晶片300的底部表面上具有下接點(未繪出)，其例如為p型接點(p-typed contact)，並且在發光二極體晶片300的頂部表面上具有上接點210，其例如為n型接點。在另一實施例中，發光二極體晶片300的下接點可以是n型接點，且發光二極體晶片300的上接點210可以是p型接點。在一實施例中，發光二極體晶片可以是水平式(horizontal)發光二極體晶片(未繪出)，在水平式發光二極體晶片的頂部表面上具有兩個接點，其分別為p型接點與n型接點。此外，發光二極體晶片300還包含多層磊晶結構(multi-layer epitaxial structure)形成於導電基底上。
在基底100之上具有圖案化的多層金屬結構106，且其延伸至空穴102內，以形成導電墊。圖案化的第一金屬層108在圖案化的多層金屬結構106上形成，然後，發光二極體晶片300設置於圖案化的第一金屬層108之上。以 上視角度觀之，圖案化第一金屬層108的尺寸大抵上與發光二極體晶片300的尺寸相同，焊料層(solder layer)(未繪出)設置於發光二極體晶片300與圖案化第一金屬層108之間。在垂直式發光二極體晶片封裝的實施例中，發光二極體晶片300的下接點與上接點分別電性連接至圖案化的多層金屬結構106，發光二極體晶片300的下接點經由發光二極體晶片300的導電基底、焊料層以及圖案化的第一金屬層108，電性連接至圖案化的多層金屬結構106；發光二極體晶片300的上接點210經由導線116，電性連接至圖案化的多層金屬結構106。此外，還具有複數個導通孔(through via)112穿過圖案化的多層金屬結構106與基底100，這些導通孔112經由圖案化的多層金屬結構106，分別與發光二極體晶片300的上接點210及下接點電性連接，且發光二極體晶片300經由這些導通孔112電性連接至外部電路。
在另一水平式發光二極體晶片封裝(未繪出)的實施例中，發光二極體晶片頂部表面的兩個接點分別經由兩個導線，電性連接至圖案化的多層金屬結構。此外，穿過圖案化多層金屬結構與基底的多個導通孔，則經由圖案化的多層金屬結構和導線，分別與水平式發光二極體晶片的兩個接點電性連接。然後，水平式發光二極體晶片經由這些導通孔與外部電路電性連接。
第2A-2H圖係顯示依據本發明之一實施例，沿著第1圖的虛線2-2’，形成發光二極體封裝體的各階段之剖面示意圖。參閱第2A圖，首先提供基底100，其例如為半導體 基底、陶瓷基底或印刷電路板(PCB)，在一實施例中，基底100可以是矽基底。接著，經由微影與蝕刻製程在基底100內形成空穴102，在一實施例中，空穴102的深度可介於約30μm至約150μm之間。然後，在基底100上與空穴102內順應性地形成絕緣層104，絕緣層104可經由化學氣相沈積法(chemical vapor deposition，簡稱CVD)、熱氧化法(thermal oxidation)或其他合適的製程形成。絕緣層104的材料可以是氧化矽(silicon oxide)、氮化矽(silicon nitride)或其他適合的材料。
接著，在絕緣層104上形成多層金屬結構105，在一實施例中，多層金屬結構105可由三層金屬層形成，例如為鈦鎢合金(TiW)、銅及鎳金屬層，可經由濺鍍法(sputtering)、物理氣相沈積法(physical vapor deposition，簡稱PVD)或其他合適的製程依序形成多層金屬結構105的三層金屬層。如第2A圖所示，絕緣層104與多層金屬結構105順應性地形成在基底100的表面上，以及空穴102的底部表面與側壁上。
接著，參閱第2B圖，以微影和蝕刻製程將多層金屬結構105圖案化，形成圖案化的多層金屬結構106，圖案化的多層金屬結構106可作為基底100上的導電墊。然後，在圖案化的多層金屬結構106上形成圖案化的第一金屬層108，在一實施例中，可經由在圖案化的多層金屬結構106上塗佈金屬層，然後以微影和蝕刻製程將金屬層圖案化，形成圖案化的第一金屬層108。在另一實施例中，圖案化的第一金屬層108可經由印刷(printing)方式形成。圖案化 第一金屬層108的材料可以是銅(Cu)、鎳(Ni)、金(Au)或銀(Ag)，其中較佳為金或銀。值得注意的是，圖案化第一金屬層108的尺寸大抵上與後續在其上形成的發光二極體晶片的尺寸相同。同時，圖案化第一金屬層108的位置與發光二極體晶片的位置相同。
參閱第2C圖，提供一發光二極體晶片200，在一實施例中，發光二極體晶片200可以是藍光二極體晶片，其包含多層磊晶結構204形成於藍寶石基底(sapphire substrate)202上。接著，在多層磊晶結構204上形成接點206，接點206可由銦錫氧化物(indium tin oxide，簡稱ITO)、銀(Ag)、鋁(Al)、鉻(Cr)、鎳(Ni)、金(Au)、鉑(Pt)、鈀(Pd)、鈦(Ti)、鉭(Ta)、氮化鈦(TiN)、氮化鉭(TaN)、鉬(Mo)、鎢(W)或其他適合的導電材料形成。多層磊晶結構204可由緩衝層(buffer layer)、n型氮化鎵(n-GaN)層、多重量子井(multi-quantum well，簡稱MQW)主動層以及p型氮化鎵(p-GaN)層，依序在藍寶石基底202上形成而組成，其中緩衝層可以是氮化鋁(AlN)、氮化鎵(GaN)、氮化鋁鎵(AlGaN)或氮化鋁銦鎵(AlInGaN)層；多重量子井主動層可以是氮化銦鎵/氮化鎵(InGaN/GaN)或氮化鋁鎵/氮化鎵(AlGaN/GaN)多重量子井主動層；接點206可以是p型接點或n型接點。在一實施例中，藍寶石基底202係作為載體基底(carrier substrate)。
參閱第2D圖，在多層磊晶結構204之上形成導電基底208，在一實施例中，導電基底208可由銅製成，導電基底208可經由電鍍法、無電電鍍法或接合法(bonding process)形成。
接著，參閱第2E圖，在導電基底208形成之後，從多層磊晶結構204移除載體基底202，可經由雷射剝離(laser lift-off)製程、濕蝕刻製程、研磨(grinding)製程或化學機械研磨(chemical mechanical polishing，簡稱CMP)製程將載體基底202移除。然後，在多層磊晶結構204上形成接點210，接點210相對於接點206設置，以完成發光二極體晶片300。接點210可由銦錫氧化物(ITO)、銀(Ag)、鋁(Al)、鉻(Cr)、鎳(Ni)、金(Au)、鉑(Pt)、鈀(Pd)、鈦(Ti)、鉭(Ta)、氮化鈦(TiN)、氮化鉭(TaN)、鉬(Mo)、鎢(W)或其他適合的導電材料形成。接點210可以是p型接點或n型接點，其具有與接點206相反的導電性。
接著，參閱第2F圖，將發光二極體晶片300設置於基底100的空穴102內，且經由焊料層212將發光二極體晶片300焊接至圖案化第一金屬層108上。在一實施例中，焊料層212可由錫銅合金(Sn-Cu alloy)製成，其包含99至99.3重量百分比的錫，以及0.7至1重量百分比的銅。可由濺鍍法、電子束蒸鍍法(e-gun evaporation)或錫膏印刷法(stencil printing)，在導電基底208上或圖案化第一金屬層108上形成焊料層212，然後，經由焊料層212以回焊(reflow)製程將發光二極體晶片300焊接至基底100上。
值得注意的是，在本發明的實施例中，發光二極體晶片300與基底100之間的接合強度較傳統使用銀膠的發光二極體封裝體之接合強度高。特別的是，可藉由將銅製成的導電基底208與錫銅合金的焊料層212焊接在一起，而 達到較高的接合強度。另外，將銀或金製成的圖案化第一金屬層108塗佈在圖案化多層金屬結構106上，以與錫銅合金的焊料層212焊接在一起，藉此可更加提升其接合強度。
接著，參閱第2G圖，形成複數個通孔(through hole)110穿過圖案化多層金屬結構106、絕緣層104以及基底100，然後，參閱第2H圖，在這些通孔110內填充導電材料，形成複數個導通孔(through via)112。另外，在基底100的底部表面上還形成導電墊114與導通孔112直接接觸，導電墊114可用於與外部電路(未繪出)電性連接。接著，形成導線116，使得發光二極體晶片300的上接點210與圖案化多層金屬結構106產生電性連接。因此，發光二極體晶片300的上接點210與下接點206可經由圖案化多層金屬結構106，分別與導通孔112電性連接，並且可經由導電墊114進一步地與外部電路電性連接，本發明一實施例之發光二極體封裝體的剖面示意圖如第2H圖所示。
接著，請參閱第3圖，其係顯示依據本發明另一實施例，發光二極體封裝體的剖面示意圖，第3圖與第2H圖之發光二極體封裝體的差別在於第3圖的發光二極體封裝體具有額外的金屬層214設置於發光二極體晶片300的導電基底208與焊料層212之間。在一實施例中，額外的金屬層214可以是銅、鎳、金或銀，其中較佳為金或銀。在此實施例中，額外的金屬層214可以增加發光二極體晶片300的歐姆接觸(ohmic contact)，此外，在額外的金屬層214與錫銅合金的焊料層212之間可以達到較高的接合強度。
依據上述實施例，本發明之發光二極體封裝體具有許多優點，首先，在實施例中使用錫銅合金的焊料層與發光二極體晶片的銅導電基底焊接，因此，可以提升發光二極體晶片的導電基底與焊料層之間的接合強度。另外，在本發明之實施例中，基底上的多層金屬結構上塗佈有金或銀的金屬層，其可以進一步地提升基底上的金屬層與焊料層之間的接合強度。因此，本發明之發光二極體封裝體的信賴性較傳統使用銀膠的發光二極體封裝體佳。
第二，本發明之實施例使用由錫銅(Sn-Cu)合金製成的焊料層，其成本比錫金(Sn-Au)合金製成的焊料層低，因此，本發明之發光二極體封裝體的製造成本較傳統使用錫金共晶接合(Sn-Au eutectic bond)的發光二極體封裝體低。
第三，本發明之實施例使用錫銅(Sn-Cu)合金的焊料層與發光二極體晶片的銅導電基底以及基底之上的銀或金的金屬層焊接，因此可改善發光二極體封裝體的散熱效率，藉此提升本發明之發光二極體元件的發光效能。
另外，依據本發明之實施例，發光二極體晶片係設置在基底的空穴中，其可以避免發光二極體晶片從基底剝離，藉此提升發光二極體封裝體的信賴性。此外，本發明之發光二極體封裝體的實施例還可以應用在具有導通孔的基底上，因此，可降低發光二極體封裝體的尺寸。
雖然本發明已揭露較佳實施例如上，然其並非用以限定本發明，任何熟悉此項技藝者，在不脫離本發明之精神和範圍內，當可做些許更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定為準。
100‧‧‧基底
102‧‧‧空穴
104‧‧‧絕緣層
105‧‧‧多層金屬結構
106‧‧‧圖案化的多層金屬結構
108‧‧‧圖案化的第一金屬層
110‧‧‧通孔
112‧‧‧導通孔
114‧‧‧導電墊
116‧‧‧導線
200、300‧‧‧發光二極體晶片
202‧‧‧載體基底(藍寶石基底)
204‧‧‧多層磊晶結構
206、210‧‧‧接點
208‧‧‧導電基底
212‧‧‧焊料層
214‧‧‧額外的金屬層
第1圖係顯示依據本發明之一實施例，發光二極體封裝體的平面示意圖。
第2A-2H圖係顯示依據本發明之一實施例，形成發光二極體封裝體的剖面示意圖。
第3圖係顯示依據本發明之另一實施例，發光二極體封裝體的剖面示意圖。
100‧‧‧基底
102‧‧‧空穴
104‧‧‧絕緣層
106‧‧‧圖案化的多層金屬結構
108‧‧‧圖案化的第一金屬層
110‧‧‧通孔
112‧‧‧導通孔
114‧‧‧導電墊
116‧‧‧導線
300‧‧‧發光二極體晶片
204‧‧‧多層磊晶結構
206、210‧‧‧接點
208‧‧‧導電基底
212‧‧‧焊料層

Claims (9)

  1. 一種發光二極體封裝體，包括：一基底；一第一金屬層，設置於該基底之上；一焊料層，設置於該第一金屬層上；以及一發光二極體晶片，設置於該焊料層上，其中該發光二極體晶片包括一導電基底，一多層磊晶結構設置於該導電基底上，以及一下方接點設置於該導電基底與該多層磊晶結構之間，其中該導電基底相較於該下方接點更靠近該焊料層，且該導電基底直接接觸該焊料層。
  2. 如申請專利範圍第1項所述之發光二極體封裝體，其中該焊料層包括錫銅合金，且其中該錫銅合金包括99至99.3重量百分比的錫以及0.7至1重量百分比的銅。
  3. 如申請專利範圍第1項所述之發光二極體封裝體，其中該發光二極體晶片的該導電基底包括銅，且該第一金屬層包括銀、金、銅或鎳。
  4. 如申請專利範圍第1項所述之發光二極體封裝體，其中該基底包括半導體基底、陶瓷基底或印刷電路板。
  5. 如申請專利範圍第1項所述之發光二極體封裝體，更包括一空穴設置於該基底內，該第一金屬層設置於該基底上與該空穴內，且該發光二極體晶片與該焊料層設置於該空穴內，其中該空穴的深度介於30μm至150μm之間。
  6. 如申請專利範圍第1項所述之發光二極體封裝體，其中從上視角度觀之，該第一金屬層的尺寸與該發光二極體晶片的尺寸相同。
  7. 如申請專利範圍第1項所述之發光二極體封裝體，更包括：一絕緣層設置於該第一金屬層與該基底之間；一多層金屬結構設置於該第一金屬層與該絕緣層之間；以及一導線設置於該發光二極體晶片上，電性連接該發光二極體晶片與該多層金屬結構，其中該多層金屬結構包括鈦鎢合金(TiW)、銅及鎳層。
  8. 如申請專利範圍第1項所述之發光二極體封裝體，其中該發光二極體晶片包括一垂直式發光二極體晶片，具有一p型接點以及一n型接點與該p型接點相對設置，該下方接點為該p型接點或該n型接點，且該基底內更包括複數個導通孔，其中該p型接點及該n型接點分別與該些導通孔電性連接。
  9. 如申請專利範圍第1項所述之發光二極體封裝體，其中該發光二極體晶片利用一回焊製程經由該焊料層焊接至該基底上。
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