TWI482882B - Surface treatment of copper foil and the use of its laminated board - Google Patents
Surface treatment of copper foil and the use of its laminated board Download PDFInfo
- Publication number
- TWI482882B TWI482882B TW102132730A TW102132730A TWI482882B TW I482882 B TWI482882 B TW I482882B TW 102132730 A TW102132730 A TW 102132730A TW 102132730 A TW102132730 A TW 102132730A TW I482882 B TWI482882 B TW I482882B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper foil
- printed wiring
- treated
- wiring board
- brightness
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 406
- 239000011889 copper foil Substances 0.000 title claims description 352
- 238000004381 surface treatment Methods 0.000 title claims description 62
- 229920005989 resin Polymers 0.000 claims description 103
- 239000011347 resin Substances 0.000 claims description 103
- 239000000758 substrate Substances 0.000 claims description 74
- 238000007788 roughening Methods 0.000 claims description 69
- 238000005530 etching Methods 0.000 claims description 61
- 239000010949 copper Substances 0.000 claims description 58
- 229910052802 copper Inorganic materials 0.000 claims description 54
- 239000002245 particle Substances 0.000 claims description 47
- 229920001721 polyimide Polymers 0.000 claims description 46
- 239000004642 Polyimide Substances 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 25
- 239000009719 polyimide resin Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 125
- 238000007747 plating Methods 0.000 description 99
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 39
- 230000003746 surface roughness Effects 0.000 description 29
- 238000005259 measurement Methods 0.000 description 24
- 238000011156 evaluation Methods 0.000 description 23
- 238000005498 polishing Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 19
- 239000000203 mixture Substances 0.000 description 17
- 239000003921 oil Substances 0.000 description 16
- 239000007788 liquid Substances 0.000 description 15
- 229910052759 nickel Inorganic materials 0.000 description 15
- 238000005096 rolling process Methods 0.000 description 15
- 239000000126 substance Substances 0.000 description 14
- 239000011701 zinc Substances 0.000 description 14
- 229910052725 zinc Inorganic materials 0.000 description 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 12
- 229910000990 Ni alloy Inorganic materials 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 10
- 238000003490 calendering Methods 0.000 description 9
- 238000005097 cold rolling Methods 0.000 description 9
- 229910017052 cobalt Inorganic materials 0.000 description 8
- 239000010941 cobalt Substances 0.000 description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 8
- 238000004904 shortening Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 6
- 239000011888 foil Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- NVIVJPRCKQTWLY-UHFFFAOYSA-N cobalt nickel Chemical compound [Co][Ni][Co] NVIVJPRCKQTWLY-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000001953 recrystallisation Methods 0.000 description 5
- 239000010731 rolling oil Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- -1 yttrium imide Chemical class 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- VDGMIGHRDCJLMN-UHFFFAOYSA-N [Cu].[Co].[Ni] Chemical compound [Cu].[Co].[Ni] VDGMIGHRDCJLMN-UHFFFAOYSA-N 0.000 description 4
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910001297 Zn alloy Inorganic materials 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000007822 coupling agent Substances 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 238000005098 hot rolling Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000008054 signal transmission Effects 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910018605 Ni—Zn Inorganic materials 0.000 description 2
- PJLJHXZTANASPP-UHFFFAOYSA-N O.OO.OS(O)(=O)=O Chemical compound O.OO.OS(O)(=O)=O PJLJHXZTANASPP-UHFFFAOYSA-N 0.000 description 2
- 229910001096 P alloy Inorganic materials 0.000 description 2
- JUWOETZNAMLKMG-UHFFFAOYSA-N [P].[Ni].[Cu] Chemical compound [P].[Ni].[Cu] JUWOETZNAMLKMG-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- MKTJTLRLXTUJCM-UHFFFAOYSA-N azanium;hydrogen peroxide;hydroxide Chemical compound [NH4+].[OH-].OO MKTJTLRLXTUJCM-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 2
- 238000004439 roughness measurement Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- NCRNCSZWOOYBQF-UHFFFAOYSA-N 1,1-Dimethoxydecane Chemical compound CCCCCCCCCC(OC)OC NCRNCSZWOOYBQF-UHFFFAOYSA-N 0.000 description 1
- LMPMFQXUJXPWSL-UHFFFAOYSA-N 3-(3-sulfopropyldisulfanyl)propane-1-sulfonic acid Chemical compound OS(=O)(=O)CCCSSCCCS(O)(=O)=O LMPMFQXUJXPWSL-UHFFFAOYSA-N 0.000 description 1
- SXPGQGNWEWPWQZ-UHFFFAOYSA-N 4-(triethoxymethyl)dodecan-1-amine Chemical compound NCCCC(C(OCC)(OCC)OCC)CCCCCCCC SXPGQGNWEWPWQZ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910020630 Co Ni Inorganic materials 0.000 description 1
- 229910002440 Co–Ni Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XEEHRQPQNJOFIQ-UHFFFAOYSA-N N(C1=CC=CC=C1)CCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound N(C1=CC=CC=C1)CCCC(C(OC)(OC)OC)CCCCCCCC XEEHRQPQNJOFIQ-UHFFFAOYSA-N 0.000 description 1
- XJDCHDFUMGSEHD-UHFFFAOYSA-N NCCCC(C(OC)(OC)OC)CCCCCCCC Chemical compound NCCCC(C(OC)(OC)OC)CCCCCCCC XJDCHDFUMGSEHD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- ZULUZJGEPGYRCN-UHFFFAOYSA-N [Cu].[Mo].[P].[Ni] Chemical compound [Cu].[Mo].[P].[Ni] ZULUZJGEPGYRCN-UHFFFAOYSA-N 0.000 description 1
- BLLZCROFSGMWOC-UHFFFAOYSA-N [W].[Co].[Ni].[Cu] Chemical compound [W].[Co].[Ni].[Cu] BLLZCROFSGMWOC-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 239000012209 synthetic fiber Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/16—Polishing
- C25F3/22—Polishing of heavy metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B1/00—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
- B21B1/40—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling foils which present special problems, e.g. because of thinness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B3/00—Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences ; Rolling of aluminium, copper, zinc or other non-ferrous metals
- B21B2003/005—Copper or its alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/412—Transparent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroplating Methods And Accessories (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Laminated Bodies (AREA)
Description
本發明係關於一種表面處理銅箔及使用其之積層板,尤其關於一種適合於要求對銅箔進行蝕刻後之剩餘部分之樹脂之透明性的領域之表面處理銅箔及使用其之積層板。The present invention relates to a surface-treated copper foil and a laminated board using the same, and more particularly to a surface-treated copper foil and a laminated board using the same, which is suitable for the transparency of a resin which requires a remaining portion of the copper foil to be etched.
就配線之容易性或輕量性而言,智慧型手機或平板PC等小型電子機器採用可撓性印刷配線板(以下記為FPC)。近年來,隨著該等電子機器之高功能化,訊號傳輸速度之高速化不斷發展,於FPC中阻抗匹配亦成為重要因素。作為對應於訊號容量增加之阻抗匹配之對策,成為FPC基底之樹脂絕緣層(例如聚醯亞胺)之厚層化不斷發展。又,隨著配線之高密度化要求,FPC之多層化更進一步發展。另一方面,FPC會被實施對液晶基材之接合或IC晶片之搭載等加工,此時之位置對準係經由透過在將銅箔與樹脂絕緣層之積層板中之銅箔蝕刻後殘留之樹脂絕緣層所識別到的定位圖案進行,因此,樹脂絕緣層之識別性變得重要。In terms of the ease of wiring or the lightness, a small-sized electronic device such as a smart phone or a tablet PC uses a flexible printed wiring board (hereinafter referred to as FPC). In recent years, with the high functionality of these electronic devices, the speed of signal transmission has been increasing, and impedance matching has become an important factor in FPC. As a countermeasure against impedance matching in which the signal capacity is increased, thick layering of a resin insulating layer (for example, polyimide) which becomes an FPC substrate is progressing. Moreover, with the demand for higher density of wiring, the multi-layering of FPC has further developed. On the other hand, the FPC is subjected to processing such as bonding of a liquid crystal substrate or mounting of an IC wafer, and the alignment is performed by etching the copper foil in the laminate of the copper foil and the resin insulating layer. The positioning pattern recognized by the resin insulating layer is performed, and therefore, the visibility of the resin insulating layer becomes important.
又,銅箔與樹脂絕緣層之積層板即覆銅積層板亦可使用表面實施有粗化鍍敷之壓延銅箔進行製造。該壓延銅箔通常係使用精銅(含氧量100~500重量ppm)或無氧銅(含氧量10重量ppm以下)作為原材料,對該等鑄錠進行熱軋後,反覆進行冷軋與退火直至既定之厚度而製造。Further, the copper clad laminate which is a laminate of the copper foil and the resin insulating layer can be produced by using a rolled copper foil having a roughened plating on its surface. The rolled copper foil is usually made of refined copper (oxygen content: 100 to 500 ppm by weight) or oxygen-free copper (oxygen content: 10 ppm by weight or less) as a raw material, and after hot rolling, the ingots are repeatedly subjected to cold rolling and Annealing is performed up to a predetermined thickness.
作為此種技術,例如,專利文獻1中揭示有如下發明:一種 覆銅積層板,其係積層聚醯亞胺膜與低粗糙度銅箔而成,銅箔蝕刻後之膜於波長600nm之透光率為40%以上,霧度(HAZE)為30%以下,接著強度為500N/m以上。As such a technique, for example, Patent Document 1 discloses the following invention: The copper-clad laminate is obtained by laminating a polyimide film and a low-roughness copper foil, and the film after etching the copper foil has a light transmittance of 40% or more at a wavelength of 600 nm and a haze (HAZE) of 30% or less. Then the intensity is 500 N/m or more.
又,專利文獻2中揭示有如下發明:一種COF用可撓性印刷配線板,其具有積層有由電解銅箔形成之導體層之絕緣層,對該導體層進行蝕刻而形成電路時蝕刻區域中之絕緣層之透光性為50%以上,其特徵在於:上述電解銅箔於與絕緣層接著之接著面具備利用鎳-鋅合金之防銹處理層,該接著面之表面粗糙度(Rz)為0.05~1.5μm,並且於入射角60°之鏡面光澤度為250以上。Further, Patent Document 2 discloses a flexible printed wiring board for COF having an insulating layer in which a conductor layer formed of an electrolytic copper foil is laminated, and the conductor layer is etched to form a circuit in an etching region. The light-transmitting property of the insulating layer is 50% or more, and the electrodeposited copper foil is provided with a rust-preventing layer using a nickel-zinc alloy on the surface next to the insulating layer, and the surface roughness (Rz) of the bonding surface is obtained. It is 0.05 to 1.5 μm, and the specular gloss at an incident angle of 60° is 250 or more.
又,專利文獻3中揭示有如下發明:一種印刷電路用銅箔之處理方法,其係處理印刷電路用銅箔之方法,其特徵在於:對銅箔之表面進行利用銅-鈷-鎳合金鍍敷之粗化處理後,形成鈷-鎳合金鍍層,進而形成鋅-鎳合金鍍層。Further, Patent Document 3 discloses a method for treating a copper foil for a printed circuit, which is a method for processing a copper foil for a printed circuit, characterized in that a surface of a copper foil is plated with a copper-cobalt-nickel alloy. After the roughening treatment, a cobalt-nickel alloy plating layer is formed to form a zinc-nickel alloy plating layer.
[專利文獻1]日本特開2004-98659號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-98659
[專利文獻2]WO2003/096776[Patent Document 2] WO2003/096776
[專利文獻3]日本專利第2849059號公報[Patent Document 3] Japanese Patent No. 2849059
於專利文獻1中,黑化處理或鍍敷處理後之藉由有機處理劑將接著性改良處理而獲得的低粗糙度銅箔,於對覆銅積層板要求彎曲性之用途方面,有時會因疲勞而斷線,且存在樹脂透視性較差之情況。In Patent Document 1, the low-roughness copper foil obtained by the adhesion improving treatment by the organic treatment agent after the blackening treatment or the plating treatment may be used for the purpose of requiring flexibility for the copper-clad laminate. Broken due to fatigue, and there is a case where the resin has poor transparency.
又,於專利文獻2中未進行粗化處理,於COF用可撓性印刷配線板以 外之用途方面,銅箔與樹脂之密合強度低,而不充足。Moreover, in Patent Document 2, the roughening treatment is not performed, and the flexible printed wiring board for COF is used. For the external use, the adhesion strength between the copper foil and the resin is low, but not sufficient.
進而,專利文獻3中記載之處理方法可對銅箔進行利用Cu-Co-Ni之微細處理,但將該銅箔與樹脂接著並利用蝕刻去除該銅箔後之樹脂無法實現優異之透明性。Further, in the treatment method described in Patent Document 3, the copper foil may be subjected to fine treatment using Cu-Co-Ni. However, the resin obtained by removing the copper foil and the resin and removing the copper foil by etching cannot achieve excellent transparency.
本發明提供一種利用蝕刻去除銅箔後之樹脂之透明性優異的表面處理銅箔及使用其之積層板。The present invention provides a surface-treated copper foil excellent in transparency of a resin obtained by removing copper foil by etching, and a laminated board using the same.
本發明人等反覆進行潛心研究,結果發現如下情況不受基板樹脂膜之種類或基板樹脂膜之厚度的影響,而會對將銅箔蝕刻去除後之樹脂透明性造成影響:對於將完成既定之表面處理之表面處理銅箔自該處理面側貼合並將其去除的聚醯亞胺基板,將附有標記之印刷物置於其下,隔著聚醯亞胺基板利用CCD攝影機對該印刷物進行攝影,於藉由該標記部分之圖像獲得的觀察地點-亮度圖表中,著眼於描繪之標記端部附近之亮度曲線之斜率,控制該亮度曲線之斜率。As a result of intensive studies, the present inventors have found that the following conditions are not affected by the type of the substrate resin film or the thickness of the substrate resin film, and the resin transparency after etching the copper foil is affected: The surface-treated surface-treated copper foil is attached to the surface of the treated surface and the polyimide substrate is removed, and the printed matter with the mark is placed under it, and the printed matter is photographed by a CCD camera via a polyimide substrate. In the observation point-luminance graph obtained by the image of the marked portion, the slope of the luminance curve is controlled by focusing on the slope of the luminance curve near the end of the marked mark.
將以上見解作為基礎而完成之本發明於一態樣中,係一種表面處理銅箔,其係至少一個表面經表面處理而成者,將上述銅箔自經表面處理之表面側貼合於聚醯亞胺樹脂基板之兩面後,利用蝕刻去除上述兩面之銅箔,將印刷有線狀標記之印刷物鋪設於露出之上述聚醯亞胺基板之下,隔著上述聚醯亞胺基板利用CCD攝影機對上述印刷物進行攝影時,對由上述攝影獲得之圖像,沿與觀察到之上述線狀標記延伸方向垂直之方向測定各觀察地點之亮度而製成觀察地點-亮度圖表,於該圖表中,將自上述標記之端部至未描繪上述標記之部分產生的亮度曲線之頂部平均值Bt與底部平均值Bb的差設為△B(△B=Bt-Bb),於觀察地點-亮度圖表中, 將表示亮度曲線與Bt之交點內最接近上述線狀標記之交點之位置的值設為t1,將自亮度曲線與Bt之交點至以Bt為基準之0.1△B深度範圍內表示亮度曲線與0.1△B之交點內最接近上述線狀標記之交點之位置的值設為t2,此時,下述(1)式定義之Sv為3.5以上,Sv=(△B×0.1)/(t1-t2) (1)。The present invention, which is completed on the basis of the above findings, is a surface-treated copper foil which is obtained by surface-treating at least one surface, and the surface of the copper foil adhered to the surface of the surface after treatment. After the two sides of the yttrium imide resin substrate are removed, the copper foil on both sides is removed by etching, and the printed matter printed with the linear mark is laid under the exposed polyimide substrate, and the CCD camera is used to sandwich the polyimide substrate. When the printed matter is photographed, the brightness of each observation point is measured in an image perpendicular to the direction in which the linear mark is observed in the image obtained by the photographing, thereby forming an observation point-luminance graph, and in the graph, The difference between the top average value Bt and the bottom average value Bb of the luminance curve generated from the end portion of the mark to the portion where the mark is not drawn is set to ΔB (ΔB=Bt-Bb), in the observation point-brightness chart, The value indicating the position of the intersection of the brightness curve and Bt closest to the intersection of the linear marks is set to t1, and the brightness curve is expressed in the range of 0.1 ΔB from the intersection of the brightness curve and Bt to the depth of 0.1 ΔB based on Bt. The value of the position closest to the intersection of the linear marks in the intersection of ΔB is t2. In this case, the Sv defined by the following formula (1) is 3.5 or more, and Sv=(ΔB×0.1)/(t1-t2 ) (1).
於本發明之表面處理銅箔之一實施形態中,自上述標記之端部至無上述標記之部分產生的亮度曲線之頂部平均值Bt與底部平均值Bb之差△B(△B=Bt-Bb)為40以上。In one embodiment of the surface-treated copper foil of the present invention, the difference between the top average Bt and the bottom average Bb of the luminance curve generated from the end portion of the mark to the portion without the mark is ΔB (ΔB=Bt- Bb) is 40 or more.
於本發明之表面處理銅箔之另一實施形態中,於根據由上述攝影獲得之圖像製成的觀察地點-亮度圖表中,△B為50以上。In another embodiment of the surface-treated copper foil of the present invention, ΔB is 50 or more in the observation point-luminance chart produced based on the image obtained by the above-described photographing.
於本發明之表面處理銅箔之再另一實施形態中,上述亮度曲線中之(1)式定義之Sv為3.9以上。In still another embodiment of the surface-treated copper foil of the present invention, the Sv defined by the formula (1) in the luminance curve is 3.9 or more.
於本發明之表面處理銅箔之再另一實施形態中,上述亮度曲線中之(1)式定義之Sv為5.0以上。In still another embodiment of the surface-treated copper foil of the present invention, the Sv defined by the formula (1) in the luminance curve is 5.0 or more.
於本發明之表面處理銅箔之再另一實施形態中,上述表面處理為粗化處理,上述粗化處理表面之TD的平均粗糙度Rz為0.30~0.80μm,粗化處理表面之MD的60度光澤度為80~350%,上述粗化粒子之表面積A與自上述銅箔表面側俯視上述粗化粒子時所得之面積B的比A/B為1.90~2.40。In still another embodiment of the surface-treated copper foil of the present invention, the surface treatment is a roughening treatment, and the average roughness Rz of the TD of the roughened surface is 0.30 to 0.80 μm, and the MD of the roughened surface is 60. The degree of gloss is 80 to 350%, and the ratio A/B of the surface area A of the roughened particles to the area B obtained by looking down the roughened particles from the surface side of the copper foil is 1.90 to 2.40.
於本發明之表面處理銅箔之再另一實施形態中,上述MD之60度光澤度為90~250%。In still another embodiment of the surface-treated copper foil of the present invention, the MD has a 60-degree gloss of 90 to 250%.
於本發明之表面處理銅箔之再另一實施形態中,上述TD之 平均粗糙度Rz為0.35~0.60μm。In still another embodiment of the surface-treated copper foil of the present invention, the TD is The average roughness Rz is from 0.35 to 0.60 μm.
於本發明之表面處理銅箔之再另一實施形態中,上述A/B為2.00~2.20。In still another embodiment of the surface-treated copper foil of the present invention, the A/B is 2.00 to 2.20.
於本發明之表面處理銅箔之再另一實施形態中,粗化處理表面之MD之60度光澤度與TD之60度光澤度的比F(F=(MD之60度光澤度)/(TD之60度光澤度))為0.80~1.40。In still another embodiment of the surface treated copper foil of the present invention, the ratio of the 60 degree gloss of the MD of the roughened surface to the 60 degree gloss of TD is F (F = (60 degree gloss of MD) / ( The 60 degree gloss of TD)) is 0.80~1.40.
於本發明之表面處理銅箔之再另一實施形態中,粗化處理表面之MD之60度光澤度與TD之60度光澤度的比F(F=(MD之60度光澤度)/(TD之60度光澤度))為0.90~1.35。In still another embodiment of the surface treated copper foil of the present invention, the ratio of the 60 degree gloss of the MD of the roughened surface to the 60 degree gloss of TD is F (F = (60 degree gloss of MD) / ( The 60 degree gloss of TD)) is 0.90~1.35.
於本發明之表面處理銅箔之再另一實施形態中,上述經表面處理之面的表面均方根高度Rq為0.14~0.63μm。In still another embodiment of the surface-treated copper foil of the present invention, the surface root mean square height Rq of the surface-treated surface is 0.14 to 0.63 μm.
於本發明之表面處理銅箔之再另一實施形態中,上述表面處理銅箔之上述表面的均方根高度Rq為0.25~0.60μm。In still another embodiment of the surface-treated copper foil of the present invention, the surface of the surface-treated copper foil has a root mean square height Rq of 0.25 to 0.60 μm.
於本發明之表面處理銅箔之再另一實施形態中,上述經表面處理之面的表面基於JIS B0601-2001之偏斜度Rsk為-0.35~0.53。In still another embodiment of the surface-treated copper foil of the present invention, the surface of the surface-treated surface has a skewness Rsk of -0.35 to 0.53 based on JIS B0601-2001.
於本發明之表面處理銅箔之再另一實施形態中,上述表面之偏斜度Rsk為-0.30~0.39。In still another embodiment of the surface-treated copper foil of the present invention, the surface has a skewness Rsk of -0.30 to 0.39.
於本發明之表面處理銅箔之再另一實施形態中,俯視上述經表面處理之表面時所得之表面積G與上述經表面處理之表面之凸部體積E的比E/G為2.11~23.91。In still another embodiment of the surface-treated copper foil of the present invention, the ratio E/G of the surface area G obtained by looking down the surface-treated surface to the convex portion volume E of the surface-treated surface is 2.11 to 23.91.
於本發明之表面處理銅箔之再另一實施形態中,上述比E/G為2.95~21.42。In still another embodiment of the surface-treated copper foil of the present invention, the ratio E/G is 2.95 to 21.42.
於本發明之表面處理銅箔之再另一實施形態中,上述表面之TD的十點平均粗糙度Rz為0.20~0.64μm。In still another embodiment of the surface-treated copper foil of the present invention, the ten-point average roughness Rz of the TD of the surface is 0.20 to 0.64 μm.
於本發明之表面處理銅箔之再另一實施形態中,上述表面之TD的十點平均粗糙度Rz為0.40~0.62μm。In still another embodiment of the surface-treated copper foil of the present invention, the ten-point average roughness Rz of the TD of the surface is 0.40 to 0.62 μm.
於本發明之表面處理銅箔之再另一實施形態中,上述表面之三維表面積D與上述二維表面積(俯視表面時所得之表面積)C的比D/C為1.0~1.7。In still another embodiment of the surface-treated copper foil of the present invention, the ratio D/C of the three-dimensional surface area D of the surface to the two-dimensional surface area (surface area obtained when the surface is viewed) C is 1.0 to 1.7.
本發明於另一態樣中,係一種積層板,其係將本發明之表面處理銅箔與樹脂基板積層而構成。In another aspect, the present invention provides a laminate comprising a surface-treated copper foil of the present invention and a resin substrate.
本發明於另一態樣中,係一種印刷配線板,其使用有本發明之表面處理銅箔。In another aspect, the present invention is a printed wiring board using the surface treated copper foil of the present invention.
本發明於另一態樣中,係一種電子機器,其使用有本發明之印刷配線板。In another aspect, the invention is an electronic machine using the printed wiring board of the invention.
本發明於再另一態樣中,係一種製造印刷配線板之方法,其係將2個以上本發明之印刷配線板連接,製造連接有2個以上之印刷配線板的印刷配線板。In still another aspect, the present invention provides a method of manufacturing a printed wiring board by connecting two or more printed wiring boards of the present invention to manufacture a printed wiring board to which two or more printed wiring boards are connected.
本發明於再另一態樣,係一種製造連接有2個以上之印刷配線板的印刷配線板之方法,其包含下述步驟:將至少1個本發明之印刷配線板、與另一個本發明之印刷配線板或並不相當於本發明之印刷配線板的印刷配線板連接。Still another aspect of the invention is a method of manufacturing a printed wiring board to which two or more printed wiring boards are connected, comprising the steps of: at least one printed wiring board of the invention, and another invention The printed wiring board or the printed wiring board which does not correspond to the printed wiring board of this invention is connected.
本發明於再另一態樣,係一種電子機器,其使用有1個以上連接有至少1個本發明之印刷配線板的印刷配線板。Still another aspect of the invention is an electronic device using one or more printed wiring boards to which at least one printed wiring board of the invention is connected.
本發明於再另一態樣,係一種製造印刷配線板之方法,其至少包含將本發明之印刷配線板與零件連接的步驟。Still another aspect of the invention is a method of manufacturing a printed wiring board comprising at least the step of connecting the printed wiring board of the present invention to a component.
本發明於再另一態樣,係一種製造連接有2個以上印刷配線板之印刷配線板的方法,其至少包含下述步驟:將至少1個本發明之印刷配線板、與另一個本發明之印刷配線板或並不相當於本發明之印刷配線板的印刷配線板連接;及將本發明之印刷配線板或本發明之連接有2個以上印刷配線板的印刷配線板與零件連接。According to still another aspect of the present invention, a method of manufacturing a printed wiring board having two or more printed wiring boards, comprising at least one of the printed wiring boards of the present invention and another invention The printed wiring board is not connected to the printed wiring board of the printed wiring board of the present invention; and the printed wiring board of the present invention or the printed wiring board to which the two or more printed wiring boards of the present invention are connected are connected to the component.
本發明於再另一態樣,係一種印刷配線板,其係具有絕緣樹脂基板與設置於上述絕緣基板上之銅電路者,且隔著上述絕緣樹脂基板利用CCD攝影機對上述銅電路進行攝影時,對由上述攝影獲得之圖像,沿與觀察到之上述銅電路延伸方向垂直之方向測定各觀察地點之亮度而製成觀察地點-亮度圖表,於該圖表中,將自上述銅電路之端部至無上述銅電路之部分產生的亮度曲線之頂部平均值設為Bt,將底部平均值設為Bb,且求出頂部平均值Bt與底部平均值Bb之差△B(△B=Bt-Bb),於觀察地點-亮度圖表中,將表示亮度曲線與Bt之交點內最接近上述銅電路之交點之位置的值設為t1,將自亮度曲線與Bt之交點至以Bt為基準之0.1△B深度範圍內表示亮度曲線與0.1△B之交點內最接近上述銅電路之交點之位置的值設為t2,此時,下述(1)式定義之Sv為3.5以上,Sv=(△B×0.1)/(t1-t2) (1)。According to still another aspect of the invention, a printed wiring board having an insulating resin substrate and a copper circuit provided on the insulating substrate, wherein the copper circuit is photographed by a CCD camera via the insulating resin substrate Observing the brightness of each observation point in an image obtained by the above-mentioned photographing in a direction perpendicular to the direction in which the copper circuit is observed to form an observation point-luminance graph, in which the end of the copper circuit is The top average value of the brightness curve generated by the portion to the portion without the copper circuit is set to Bt, the bottom average value is set to Bb, and the difference between the top average value Bt and the bottom average value Bb is obtained ΔB (ΔB=Bt- Bb), in the observation location-brightness graph, the value indicating the position of the intersection of the brightness curve and Bt closest to the copper circuit is set to t1, and the intersection of the self-luminance curve and Bt to 0.1 based on Bt The value in the ΔB depth range indicating the position of the intersection of the luminance curve and 0.1 ΔB closest to the intersection of the copper circuits is t2. In this case, the Sv defined by the following formula (1) is 3.5 or more, and Sv=(Δ B × 0.1) / (t1 - t2) (1).
本發明於再另一態樣,係一種覆銅積層板,其係具有絕緣樹脂基板與設置於上述絕緣基板上之銅箔者,且藉由蝕刻使上述覆銅積層板之上述銅箔形成為線狀銅箔後,隔著上述絕緣樹脂基板利用CCD攝影機進 行攝影時,對由上述攝影獲得之圖像,沿與觀察到之上述線狀銅箔延伸方向垂直之方向測定各觀察地點之亮度而製成觀察地點-亮度圖表,於該圖表中,將自上述線狀銅箔之端部至無上述線狀銅箔之部分產生的亮度曲線之頂部平均值設為Bt,將底部平均值設為Bb,且求出頂部平均值Bt與底部平均值Bb之差△B(△B=Bt-Bb),於觀察地點-亮度圖表中,將表示亮度曲線與Bt之交點內最接近上述線狀表面處理銅箔之交點之位置的值設為t1,將自亮度曲線與Bt之交點至以Bt為基準之0.1△B深度範圍內表示亮度曲線與0.1△B之交點內最接近上述線狀表面處理銅箔之交點之位置的值設為t2,此時,下述(1)式定義之Sv為3.5以上,Sv=(△B×0.1)/(t1-t2) (1)。According to still another aspect of the invention, a copper-clad laminate having an insulating resin substrate and a copper foil provided on the insulating substrate, wherein the copper foil of the copper-clad laminate is formed by etching After the linear copper foil, the CCD camera is used to pass through the above-mentioned insulating resin substrate. In the case of line photography, the brightness of each observation point is measured in the direction perpendicular to the direction in which the linear copper foil is observed in the image obtained by the above-mentioned photographing, and an observation point-brightness graph is formed in the graph. The top average value of the brightness curve generated from the end portion of the linear copper foil to the portion without the linear copper foil is Bt, the bottom average value is Bb, and the top average value Bt and the bottom average value Bb are obtained. Difference ΔB (ΔB=Bt-Bb), in the observation point-brightness chart, the value indicating the position of the intersection of the brightness curve and Bt closest to the above-mentioned linear surface-treated copper foil is set to t1, and will be The value of the intersection of the brightness curve and Bt to the depth of 0.1 ΔB based on Bt indicates that the value of the position closest to the intersection of the linear surface-treated copper foil at the intersection of the brightness curve and 0.1 ΔB is t2, at this time, The Sv defined by the following formula (1) is 3.5 or more, and Sv = (ΔB × 0.1) / (t1 - t2) (1).
根據本發明,可提供一種利用蝕刻去除銅箔後之樹脂之透明性優異的表面處理銅箔及使用其之積層板。According to the present invention, it is possible to provide a surface-treated copper foil excellent in transparency of a resin obtained by removing copper foil by etching, and a laminate using the same.
圖1係定義Bt及Bb之模式圖。Figure 1 is a schematic diagram defining Bt and Bb.
圖2係定義t1、t2及Sv之模式圖。Figure 2 is a schematic diagram defining t1, t2, and Sv.
圖3係表示亮度曲線之斜率評價時之攝影裝置之構成及亮度曲線之斜率測定方法的模式圖。Fig. 3 is a schematic view showing a configuration of a photographing apparatus and a method of measuring a slope of a luminance curve when the slope of the luminance curve is evaluated.
圖4a係Rz評價時之實驗例B3-1之銅箔表面的SEM觀察照片。Fig. 4a is a SEM observation photograph of the surface of the copper foil of Experimental Example B3-1 at the time of Rz evaluation.
圖4b係Rz評價時之實驗例A3-1之銅箔表面的SEM觀察照片。Fig. 4b is a SEM observation photograph of the surface of the copper foil of Experimental Example A3-1 at the time of Rz evaluation.
圖4c係Rz評價時之實驗例A3-2之銅箔表面的SEM觀察照片。Fig. 4c is a SEM observation photograph of the surface of the copper foil of Experimental Example A3-2 at the time of Rz evaluation.
圖4d係Rz評價時之實驗例A3-3之銅箔表面的SEM觀察照片。Fig. 4d is a SEM observation photograph of the surface of the copper foil of Experimental Example A3-3 at the time of Rz evaluation.
圖4e係Rz評價時之實驗例A3-4之銅箔表面的SEM觀察照片。Fig. 4e is a SEM observation photograph of the surface of the copper foil of Experimental Example A3-4 at the time of Rz evaluation.
圖4f係Rz評價時之實驗例A3-5之銅箔表面的SEM觀察照片。Fig. 4f is a SEM observation photograph of the surface of the copper foil of Experimental Example A3-5 at the time of Rz evaluation.
圖4g係Rz評價時之實驗例A3-6之銅箔表面的SEM觀察照片。Fig. 4g is a SEM observation photograph of the surface of the copper foil of Experimental Example A3-6 at the time of Rz evaluation.
圖4h係Rz評價時之實驗例A3-7之銅箔表面的SEM觀察照片。Fig. 4h is a SEM observation photograph of the surface of the copper foil of Experimental Example A3-7 at the time of Rz evaluation.
圖4i係Rz評價時之實驗例A3-8之銅箔表面的SEM觀察照片。Fig. 4i is a SEM observation photograph of the surface of the copper foil of Experimental Example A3-8 at the time of Rz evaluation.
圖4j係Rz評價時之實驗例A3-9之銅箔表面的SEM觀察照片。Fig. 4j is a SEM observation photograph of the surface of the copper foil of Experimental Example A3-9 at the time of Rz evaluation.
圖4k係Rz評價時之實驗例B4-2之銅箔表面的SEM觀察照片。Fig. 4k is a SEM observation photograph of the surface of the copper foil of Experimental Example B4-2 at the time of Rz evaluation.
圖4l係Rz評價時之實驗例B4-3之銅箔表面的SEM觀察照片。Fig. 4 is a SEM observation photograph of the surface of the copper foil of Experimental Example B4-3 at the time of Rz evaluation.
圖5係表示於銅箔表面之偏斜度Rsk為正負之各情形時之銅箔蝕刻後之聚醯亞胺(PI)之表面形態的模式圖。Fig. 5 is a schematic view showing the surface morphology of the polyimide (PI) after copper foil etching in the case where the skewness Rsk of the surface of the copper foil is positive or negative.
[表面處理銅箔之形態及製造方法][Formation and Manufacturing Method of Surface-treated Copper Foil]
本發明中使用之銅箔可用作藉由與樹脂基板接著而製作積層體並利用蝕刻去除而使用之銅箔。The copper foil used in the present invention can be used as a copper foil which is produced by laminating a resin substrate and removing it by etching.
本發明中使用之銅箔可為電解銅箔或壓延銅箔中之任一者。通常,為了提高銅箔之與樹脂基板接著之面、即表面處理側之表面於積層後之銅箔之剝離強度,亦可對脫脂後之銅箔之表面實施進行瘤狀電沉積之粗化處理。電解銅箔於製造時即具有凹凸,可藉由粗化處理使電解銅箔之凸部增強而進一步增大凹凸。於本發明中,該粗化處理係藉由銅-鈷-鎳合金鍍敷或銅-鎳-磷合金鍍敷、鎳-鋅合金鍍敷等合金鍍敷而進行。又,較佳為可藉由銅合金鍍敷而進行。作為銅合金鍍浴,例如較佳為使用含有銅與一種以上銅以外之元素之鍍浴,更佳為使用含有銅與選自由鈷、鎳、砷、 鎢、鉻、鋅、磷、錳及鉬組成之群中之任一種以上的鍍浴。並且,於本發明中,使該粗化處理與先前之粗化處理相比提高電流密度且縮短粗化處理時間。有進行通常之鍍銅等作為粗化前之前處理的情況,亦有為了防止電沉積物脫落而進行通常之鍍銅等作為粗化後之潤飾處理的情況。壓延銅箔與電解銅箔亦於處理之內容上些許不同。The copper foil used in the present invention may be either an electrolytic copper foil or a rolled copper foil. In general, in order to increase the peeling strength of the copper foil on the surface of the resin substrate, that is, the surface of the surface-treated side, the surface of the copper foil after the degreasing may be subjected to roughening treatment of the surface of the copper foil after degreasing. . The electrolytic copper foil has irregularities at the time of production, and the convex portion of the electrolytic copper foil can be reinforced by the roughening treatment to further increase the unevenness. In the present invention, the roughening treatment is carried out by alloy plating such as copper-cobalt-nickel alloy plating or copper-nickel-phosphorus alloy plating or nickel-zinc alloy plating. Further, it is preferably carried out by copper alloy plating. As the copper alloy plating bath, for example, a plating bath containing copper and one or more elements other than copper is preferably used, and it is more preferable to use copper and a material selected from the group consisting of cobalt, nickel, and arsenic. A plating bath of any one or more of the group consisting of tungsten, chromium, zinc, phosphorus, manganese, and molybdenum. Further, in the present invention, the roughening treatment is performed to increase the current density and shorten the roughening processing time as compared with the previous roughening treatment. There is a case where normal copper plating or the like is performed as a pre-roughening treatment, and in order to prevent the electrodeposited material from falling off, a normal copper plating or the like may be used as a refining treatment after roughening. The rolled copper foil and the electrolytic copper foil are also slightly different in handling.
再者,本案發明之壓延銅箔中亦包括含有Ag、Sn、In、Ti、Zn、Zr、Fe、P、Ni、Si、Te、Cr、Nb、V等元素中之一種以上的銅合金箔。若上述元素之濃度提高(例如合計為10質量%以上),則有導電率降低之情況。壓延銅箔之導電率較佳為50%IACS以上,更佳為60%IACS以上,進而較佳為80%IACS以上。上述銅合金箔可含有銅以外之元素合計為0mass%以上且50mass%以下,可含有0.0001mass%以上且40mass%以下,可含有0.0005mass%以上且30mass%以下,亦可含有0.001mass%以上且20mass%以下。Furthermore, the rolled copper foil of the present invention also includes a copper alloy foil containing one or more of elements such as Ag, Sn, In, Ti, Zn, Zr, Fe, P, Ni, Si, Te, Cr, Nb, and V. . When the concentration of the above elements is increased (for example, 10% by mass or more in total), the electrical conductivity may be lowered. The electrical conductivity of the rolled copper foil is preferably 50% IACS or more, more preferably 60% IACS or more, and still more preferably 80% IACS or more. The total amount of the elements other than copper may be 0 mass% or more and 50 mass% or less, and may be 0.0001 mass% or more and 40 mass% or less, and may be 0.0005 mass% or more and 30 mass% or less, or may be 0.001 mass% or more. 20mass% or less.
本發明中使用之銅箔亦可於進行過粗化處理後或省略粗化處理而於表面施加有耐熱鍍層(耐熱層)或防銹鍍層(防銹層)或耐候性層。作為省略粗化處理而對表面施加耐熱鍍層或防銹鍍層之處理,可使用利用下述條件之Ni鍍浴(1)或Ni-Zn鍍浴(2)之鍍敷處理。The copper foil used in the present invention may be subjected to a roughening treatment or a roughening treatment to apply a heat-resistant plating layer (heat-resistant layer) or a rust-preventing layer (rust-proof layer) or a weather-resistant layer to the surface. As a treatment for applying a heat-resistant plating layer or a rust-preventive plating layer to the surface as the roughening treatment, a plating treatment of a Ni plating bath (1) or a Ni-Zn plating bath (2) under the following conditions can be used.
(Ni鍍浴(1))(Ni plating bath (1))
.液組成:Ni20~30g/L. Liquid composition: Ni20~30g/L
.pH:2~3. pH: 2~3
.電流密度:6~7A/dm2 . Current density: 6~7A/dm 2
.浴溫:35~45℃. Bath temperature: 35~45°C
.庫侖量:1.2~8.4As/dm2 . Coulomb amount: 1.2~8.4As/dm 2
.鍍敷時間:0.2~1.2秒. Plating time: 0.2~1.2 seconds
(Ni-Zn鍍浴(2))(Ni-Zn plating bath (2))
.液組成:鎳20~30g/L、鋅0.5~2.5g/L. Liquid composition: nickel 20~30g/L, zinc 0.5~2.5g/L
.pH:2~3. pH: 2~3
.電流密度:6~7A/dm2 . Current density: 6~7A/dm 2
.浴溫:35~45℃. Bath temperature: 35~45°C
.庫侖量:1.2~8.4As/dm2 . Coulomb amount: 1.2~8.4As/dm 2
.鍍敷時間:0.2~1.2秒. Plating time: 0.2~1.2 seconds
再者,於省略粗化處理而藉由鍍敷(正常鍍敷而並非粗化鍍敷之鍍敷)將耐熱層或防銹層設置於銅箔之情形時,與先前相比必須提高該鍍敷之電流密度並縮短鍍敷時間。In addition, when the heat-resistant layer or the rust-preventive layer is provided on the copper foil by plating (normal plating instead of rough plating), the plating is necessary to be improved as compared with the prior art. Apply current density and shorten plating time.
再者,本發明中使用之銅箔之厚度無需特別限定,例如為1μm以上、2μm以上、3μm以上、5μm以上,且例如為3000μm以下、1500μm以下、800μm以下、300μm以下、150μm以下、100μm以下、70μm以下、50μm以下、40μm以下。In addition, the thickness of the copper foil used in the present invention is not particularly limited, and is, for example, 1 μm or more, 2 μm or more, 3 μm or more, or 5 μm or more, and is, for example, 3000 μm or less, 1500 μm or less, 800 μm or less, 300 μm or less, 150 μm or less, or 100 μm or less. 70 μm or less, 50 μm or less, and 40 μm or less.
又,將本案發明中使用之電解銅箔之製造條件表示如下。Moreover, the manufacturing conditions of the electrolytic copper foil used in the invention of the present invention are shown below.
<電解液組成><electrolyte composition>
銅:90~110g/LCopper: 90~110g/L
硫酸:90~110g/LSulfuric acid: 90~110g/L
氯:50~100ppmChlorine: 50~100ppm
調平劑1(雙(3-磺丙基)二硫醚):10~30ppmLeveling agent 1 (bis(3-sulfopropyl) disulfide): 10~30ppm
調平劑2(胺化合物):10~30ppmLeveling agent 2 (amine compound): 10~30ppm
上述胺化合物可使用以下化學式之胺化合物。As the above amine compound, an amine compound of the following chemical formula can be used.
(上述化學式中,R1 及R2 為選自由羥烷基、醚基、芳基、經芳香族取代之烷基、不飽和烴基、烷基組成之群中者)(In the above chemical formula, R 1 and R 2 are those selected from the group consisting of a hydroxyalkyl group, an ether group, an aryl group, an aromatic-substituted alkyl group, an unsaturated hydrocarbon group, and an alkyl group)
<製造條件><Manufacturing conditions>
電流密度:70~100A/dm2 Current density: 70~100A/dm 2
電解液溫度:50~60℃Electrolyte temperature: 50~60°C
電解液線速:3~5m/secElectrolyte line speed: 3~5m/sec
電解時間:0.5~10分鐘Electrolysis time: 0.5~10 minutes
作為粗化處理之銅-鈷-鎳合金鍍敷可藉由電鍍以形成如附著量為15~40mg/dm2 之銅-100~3000μg/dm2 之鈷-50~1500μg/dm2 之鎳的三元系合金層的方式實施,較佳為以形成如附著量為15~40mg/dm2 之銅-100~3000μg/dm2 之鈷-100~1500μg/dm2 之鎳的三元系合金層的方式實施。若Co附著量未達100μg/dm2 ,則有耐熱性惡化、蝕刻性變差之情況。若Co附著量超過3000μg/dm2 ,則於必須考慮磁性之影響之情形時欠佳,有產生蝕刻斑且耐酸性及耐化學品性惡化之情況。若Ni附著量未達50μg/dm2 ,則有耐熱性變差之情況。另一方面,若Ni附著量超過1500μg/dm2 ,則有蝕刻殘留增加之情況。較佳之Co附著量為1000~ 2500μg/dm2 ,較佳之鎳附著量為500~1200μg/dm2 。此處,蝕刻斑係指於利用氯化銅進行蝕刻之情形時Co未溶解而殘留之情況,並且,蝕刻殘留係指於利用氯化銨進行鹼蝕刻之情形時Ni未溶解而殘留之情況。The copper-cobalt-nickel alloy plating as the roughening treatment can be formed by electroplating to form a nickel of -50 to 3000 μg/dm 2 of cobalt -100 to 1500 μg/dm 2 of nickel as an adhesion amount of 15 to 40 mg/dm 2 . The ternary alloy layer is preferably formed by forming a ternary alloy layer such as copper-100-3000 μg/dm 2 of cobalt-100-1500 μg/dm 2 of nickel having an adhesion amount of 15 to 40 mg/dm 2 . The way to implement. When the Co adhesion amount is less than 100 μg/dm 2 , the heat resistance is deteriorated and the etching property is deteriorated. When the Co adhesion amount exceeds 3000 μg/dm 2 , it is not preferable in the case where the influence of magnetism is necessary, and there is a case where an etching spot is generated and acid resistance and chemical resistance are deteriorated. If the Ni adhesion amount is less than 50 μg/dm 2 , the heat resistance may be deteriorated. On the other hand, when the Ni adhesion amount exceeds 1500 μg/dm 2 , there is a case where the etching residue increases. Preferably, the deposited mass of Co is 1000 ~ 2500μg / dm 2, preferably of the deposited mass of nickel is 500 ~ 1200μg / dm 2. Here, the etching spot refers to a case where Co is not dissolved and remains in the case of etching with copper chloride, and the etching residue refers to a case where Ni is not dissolved and remains in the case of performing alkali etching with ammonium chloride.
用以形成此種三元系銅-鈷-鎳合金鍍層之鍍浴及鍍敷條件如下所述:鍍浴組成:Cu 10~20g/L、Co 1~10g/L、Ni 1~10g/LThe plating bath and plating conditions for forming such a ternary copper-cobalt-nickel alloy plating layer are as follows: plating bath composition: Cu 10~20g/L, Co 1~10g/L, Ni 1~10g/L
pH:1~4pH: 1~4
溫度:30~50℃Temperature: 30~50°C
電流密度Dk :25~50A/dm2 Current density D k : 25~50A/dm 2
鍍敷時間:0.2~3秒Plating time: 0.2~3 seconds
再者,本發明之一實施形態之表面處理銅箔可於較先前縮短鍍敷時間、提高電流密度之條件下進行粗化處理。藉由於較先前縮短鍍敷時間、提高電流密度之條件下進行粗化處理,而使較先前更微細之粗化粒子形成於銅箔表面。再者,於將鍍敷之電流密度設為高於上述範圍之情形時,必須將鍍敷時間設為低於上述範圍。Further, the surface-treated copper foil according to an embodiment of the present invention can be subjected to a roughening treatment under the conditions of shortening the plating time and increasing the current density. By roughening the film under the conditions of shortening the plating time and increasing the current density, the coarser particles which are finer than before are formed on the surface of the copper foil. Further, when the current density of the plating is set to be higher than the above range, the plating time must be set to be lower than the above range.
又,將作為本發明之粗化處理之銅-鎳-磷合金鍍敷之條件表示如下。Further, the conditions for plating the copper-nickel-phosphorus alloy which is the roughening treatment of the present invention are shown below.
鍍浴組成:Cu 10~50g/L、Ni 3~20g/L、P 1~10g/LComposition of plating bath: Cu 10~50g/L, Ni 3~20g/L, P 1~10g/L
pH:1~4pH: 1~4
溫度:30~40℃Temperature: 30~40°C
電流密度Dk :30~50A/dm2 Current density D k : 30~50A/dm 2
鍍敷時間:0.2~3秒Plating time: 0.2~3 seconds
再者,本發明之一實施形態之表面處理銅箔可於較先前縮短鍍敷時間、提高電流密度之條件下進行粗化處理。藉由於較先前縮短鍍敷時間、提高電流密度之條件下進行粗化處理,而使較先前更微細之粗化粒子形成於銅箔表面。再者,於將鍍敷之電流密度設為高於上述範圍之情形時,必須將鍍敷時間設為低於上述範圍。Further, the surface-treated copper foil according to an embodiment of the present invention can be subjected to a roughening treatment under the conditions of shortening the plating time and increasing the current density. By roughening the film under the conditions of shortening the plating time and increasing the current density, the coarser particles which are finer than before are formed on the surface of the copper foil. Further, when the current density of the plating is set to be higher than the above range, the plating time must be set to be lower than the above range.
又,將作為本發明之粗化處理之銅-鎳-鈷-鎢合金鍍敷之條件表示如下。Further, the conditions of the copper-nickel-cobalt-tungsten alloy plating which is the roughening treatment of the present invention are shown below.
鍍浴組成:Cu 5~20g/L、Ni 5~20g/L、Co 5~20g/L、W 1~10g/LComposition of plating bath: Cu 5~20g/L, Ni 5~20g/L, Co 5~20g/L, W 1~10g/L
pH:1~5pH: 1~5
溫度:30~50℃Temperature: 30~50°C
電流密度Dk :30~50A/dm2 Current density D k : 30~50A/dm 2
鍍敷時間:0.2~3秒Plating time: 0.2~3 seconds
再者,本發明之一實施形態之表面處理銅箔可於較先前縮短鍍敷時間、提高電流密度之條件下進行粗化處理。藉由於較先前縮短鍍敷時間、提高電流密度之條件下進行粗化處理,而使較先前更微細之粗化粒子形成於銅箔表面。再者,於將鍍敷之電流密度設為高於上述範圍之情形時,必須將鍍敷時間設為低於上述範圍。Further, the surface-treated copper foil according to an embodiment of the present invention can be subjected to a roughening treatment under the conditions of shortening the plating time and increasing the current density. By roughening the film under the conditions of shortening the plating time and increasing the current density, the coarser particles which are finer than before are formed on the surface of the copper foil. Further, when the current density of the plating is set to be higher than the above range, the plating time must be set to be lower than the above range.
又,將作為本發明之粗化處理之銅-鎳-鉬-磷鍍敷合金條件表示如下。Further, the conditions of the copper-nickel-molybdenum-phosphorus plating alloy which is the roughening treatment of the present invention are shown below.
鍍浴組成:Cu 5~20g/L、Ni 5~20g/L、Mo 1~10g/L、P 1~10g/LComposition of plating bath: Cu 5~20g/L, Ni 5~20g/L, Mo 1~10g/L, P 1~10g/L
pH:1~5pH: 1~5
溫度:30~50℃Temperature: 30~50°C
電流密度Dk :30~50A/dm2 Current density D k : 30~50A/dm 2
鍍敷時間:0.2~3秒Plating time: 0.2~3 seconds
再者,本發明之一實施形態之表面處理銅箔可於較先前縮短鍍敷時間、提高電流密度之條件下進行粗化處理。藉由於較先前縮短鍍敷時間、提高電流密度之條件下進行粗化處理,而使較先前更微細之粗化粒子形成於銅箔表面。再者,於將鍍敷之電流密度設為高於上述範圍之情形時,必須將鍍敷時間設為低於上述範圍。Further, the surface-treated copper foil according to an embodiment of the present invention can be subjected to a roughening treatment under the conditions of shortening the plating time and increasing the current density. By roughening the film under the conditions of shortening the plating time and increasing the current density, the coarser particles which are finer than before are formed on the surface of the copper foil. Further, when the current density of the plating is set to be higher than the above range, the plating time must be set to be lower than the above range.
可於粗化處理後,在粗化面上形成附著量為200~3000μg/dm2 之鈷-100~700μg/dm2 之鎳的鈷-鎳合金鍍層。該處理於廣義上可視為一種防銹處理。該鈷-鎳合金鍍層必須以使銅箔與基板之接著強度實質上不降低之程度進行。若鈷附著量未達200μg/dm2 ,則有耐熱剝離強度降低、耐氧化性及耐化學品性惡化之情況。又,作為另一原因,若鈷量較少,則處理表面容易泛紅,故而欠佳。若鈷附著量超過3000μg/dm2 ,則於必須考慮磁性之影響之情形時欠佳,有產生蝕刻斑之情況,又,有耐酸性及耐化學品性惡化之情況。較佳之鈷附著量為500~2500μg/dm2 。另一方面,若鎳附著量未達100μg/dm2 ,則有耐熱剝離強度降低、耐氧化性及耐化學品性惡化之情況。若鎳超過1300μg/dm2 ,則鹼蝕刻性變差。較佳之鎳附著量為200~1200μg/dm2 。After the roughening treatment, a cobalt-nickel alloy plating layer having a cobalt content of from 100 to 3000 μg/dm 2 to 100 to 700 μg/dm 2 of nickel may be formed on the roughened surface. This treatment can be regarded as a rust-proof treatment in a broad sense. The cobalt-nickel alloy plating layer must be formed to such an extent that the bonding strength between the copper foil and the substrate is not substantially lowered. When the cobalt adhesion amount is less than 200 μg/dm 2 , the heat-resistant peel strength is lowered, and oxidation resistance and chemical resistance are deteriorated. Further, as another reason, if the amount of cobalt is small, the treated surface is easily reddish, which is not preferable. When the cobalt adhesion amount exceeds 3000 μg/dm 2 , it is not preferable in the case where the influence of magnetism is necessary, and there is a case where an etching spot is generated, and acid resistance and chemical resistance are deteriorated. A preferred amount of cobalt adhesion is 500 to 2500 μg/dm 2 . On the other hand, when the nickel adhesion amount is less than 100 μg/dm 2 , the heat-resistant peel strength is lowered, and the oxidation resistance and chemical resistance are deteriorated. If the nickel exceeds 1300 μg/dm 2 , the alkali etching property is deteriorated. A preferred nickel adhesion amount is 200 to 1200 μg/dm 2 .
又,鈷-鎳合金鍍敷之條件如下所述:鍍浴組成:Co 1~20g/L、Ni 1~20g/LMoreover, the conditions for cobalt-nickel alloy plating are as follows: plating bath composition: Co 1~20g/L, Ni 1~20g/L
pH:1.5~3.5pH: 1.5~3.5
溫度:30~80℃Temperature: 30~80°C
根據本發明,於鈷-鎳合金鍍層上進一步形成附著量為30~250μg/dm2 之鋅鍍層。若鋅附著量未達30μg/dm2 ,則有耐熱劣化率改善效果消失之情況。另一方面,若鋅附著量超過250μg/dm2 ,則有耐鹽酸劣化率變得極差之情況。較佳為鋅附著量為30~240μg/dm2 ,更佳為80~220μg/dm2 。According to the present invention, a zinc plating layer having an adhesion amount of 30 to 250 μg/dm 2 is further formed on the cobalt-nickel alloy plating layer. When the amount of zinc adhesion is less than 30 μg/dm 2 , the effect of improving the heat-resistant deterioration rate may be lost. On the other hand, when the amount of zinc adhesion exceeds 250 μg/dm 2 , the rate of deterioration of hydrochloric acid resistance may be extremely poor. The zinc adhesion amount is preferably from 30 to 240 μg/dm 2 , more preferably from 80 to 220 μg/dm 2 .
上述鋅鍍敷之條件如下所述:鍍浴組成:Zn 100~300g/LThe conditions of the above zinc plating are as follows: plating bath composition: Zn 100~300g/L
pH:3~4pH: 3~4
溫度:50~60℃Temperature: 50~60°C
再者,亦可代替鋅鍍層,而形成鋅-鎳合金鍍層等鋅合金鍍層,進而亦可藉由於最表面塗佈鉻酸鹽處理或矽烷偶合劑等而形成防銹層。Further, instead of the zinc plating layer, a zinc alloy plating layer such as a zinc-nickel alloy plating layer may be formed, and a rustproof layer may be formed by coating a chromate treatment or a decane coupling agent on the outermost surface.
本發明之表面處理銅箔亦可設為如下構成:表面處理為粗化處理,粗化處理表面之TD的平均粗糙度Rz為0.30~0.80μm,粗化處理表面之MD的60度光澤度為80~350%,粗化粒子之表面積A與自銅箔表面側俯視粗化粒子時所得之面積B的比A/B為1.90~2.40。以下對此種構成之銅箔之上述表面粗糙度Rz(1)、光澤度(2)、粒子之表面積比(3)進行說明。The surface-treated copper foil of the present invention may be configured such that the surface treatment is roughening treatment, the average roughness Rz of the TD of the roughened surface is 0.30 to 0.80 μm, and the 60-degree gloss of the MD of the roughened surface is 80 to 350%, the ratio A/B of the surface area A of the roughened particles and the area B obtained when the roughened particles are viewed from the surface side of the copper foil is 1.90 to 2.40. The surface roughness Rz(1), the glossiness (2), and the surface area ratio (3) of the particles of the copper foil having such a composition will be described below.
(1)表面粗糙度Rz(1) Surface roughness Rz
上述構成之表面處理銅箔較佳為於銅箔表面藉由粗化處理形成粗化粒子,且,粗化處理表面之TD的平均粗糙度Rz為0.20~0.80μm。藉由此種構成,剝離強度提高而與樹脂良好地接著,且,利用蝕刻去除銅箔後之樹 脂之透明性提高。其結果,經由透過該樹脂識別到之定位圖案而進行IC晶片搭載時之位置對準等變得更容易。若TD之平均粗糙度Rz未達0.20μm,則擔心用以製作超平滑表面之製造成本。另一方面,若TD之平均粗糙度Rz超過0.80μm,則有利用蝕刻去除銅箔後之樹脂表面之凹凸增大之虞,結果有產生樹脂之透明性變得不良之問題之虞。粗化處理表面之TD的平均粗糙度Rz更佳為0.30~0.70μm,進而更佳為0.35~0.60μm,進而更佳為0.35~0.55μm,進而更佳為0.35~0.50μm。再者,於必須縮小Rz之用途中使用本發明之表面處理銅箔之情形時,本發明之表面處理銅箔之粗化處理表面之TD的平均粗糙度Rz較佳為0.20~0.70μm,更佳為0.25~0.60μm,進而更佳為0.30~0.60μm,進而更佳為0.30~0.55μm,進而更佳為0.30~0.50μm。The surface-treated copper foil having the above-described structure preferably has coarsened particles formed on the surface of the copper foil by roughening treatment, and the average roughness Rz of the TD of the roughened surface is 0.20 to 0.80 μm. With such a configuration, the peel strength is improved and the resin is well adhered to, and the tree after the copper foil is removed by etching. The transparency of the grease is improved. As a result, it is easier to perform alignment and the like at the time of mounting the IC wafer via the positioning pattern recognized by the resin. If the average roughness Rz of the TD is less than 0.20 μm, there is a fear of manufacturing cost for producing an ultra-smooth surface. On the other hand, when the average roughness Rz of the TD exceeds 0.80 μm, the unevenness of the surface of the resin after the removal of the copper foil by etching is increased, and as a result, there is a problem that the transparency of the resin is deteriorated. The average roughness Rz of the TD of the roughened surface is preferably from 0.30 to 0.70 μm, more preferably from 0.35 to 0.60 μm, still more preferably from 0.35 to 0.55 μm, still more preferably from 0.35 to 0.50 μm. Further, in the case where the surface-treated copper foil of the present invention is used in the use of the Rz, the average roughness Rz of the TD of the roughened surface of the surface-treated copper foil of the present invention is preferably 0.20 to 0.70 μm. The ratio is preferably 0.25 to 0.60 μm, more preferably 0.30 to 0.60 μm, still more preferably 0.30 to 0.55 μm, and still more preferably 0.30 to 0.50 μm.
再者,於本發明之表面處理銅箔中,所謂「粗化處理表面」,係指於粗化處理後為了設置耐熱層、防銹層、耐候性層等而進行表面處理的情形時,進行過該表面處理後之表面處理銅箔之表面。In the case of the surface-treated copper foil of the present invention, the "roughening treatment surface" refers to a case where a surface treatment is performed in order to provide a heat-resistant layer, a rust-preventing layer, a weather-resistant layer, or the like after the roughening treatment. The surface of the surface treated copper foil after the surface treatment.
(2)光澤度(2) Glossiness
表面處理銅箔之經表面處理側之表面(例如粗化面)之壓延方向(MD)之入射角60度之光澤度對上述樹脂之透明性造成大幅影響。即,越是經表面處理側之表面(例如粗化面)之光澤度較大之銅箔,上述樹脂之透明性越良好。因此,上述構成之表面處理銅箔較佳為經表面處理側之表面之光澤度為76~350%,較佳為80~350%,更佳為90~300%,進而更佳為90~250%,進而更佳為100~250%。The gloss of the incident angle of 60 degrees in the rolling direction (MD) of the surface of the surface-treated copper foil on the surface-treated side (for example, the roughened surface) greatly affects the transparency of the above resin. That is, the more the copper foil having a higher gloss on the surface (for example, the roughened surface) on the surface-treated side, the better the transparency of the resin. Therefore, the surface-treated copper foil having the above composition preferably has a gloss of 76 to 350%, preferably 80 to 350%, more preferably 90 to 300%, and even more preferably 90 to 250. %, and more preferably 100~250%.
再者,藉由控制表面處理前之銅箔之MD之光澤度與TD之表面粗糙度 Rz,可控制本發明之Sv、△B。又,藉由控制表面處理前之銅箔之TD之光澤度與TD之表面粗糙度Rz,可分別控制本發明之Sv、Rsk、Rq及比E/G。Furthermore, by controlling the gloss of the MD of the copper foil before the surface treatment and the surface roughness of the TD Rz, which can control Sv and ΔB of the present invention. Further, by controlling the gloss of the TD of the copper foil before the surface treatment and the surface roughness Rz of the TD, the Sv, Rsk, Rq and the ratio E/G of the present invention can be respectively controlled.
具體而言,表面處理前之銅箔之TD之表面粗糙度(Rz)為0.30~0.80μm,較佳為0.30~0.50μm,於壓延方向(MD)之入射角60度之光澤度為350~800%,較佳為500~800%,進而,若較先前之粗化處理提高電流密度、縮短粗化處理時間,則進行表面處理後之表面處理銅箔之壓延方向(MD)之入射角60度之光澤度成為90~350%。又,可將Sv與△B控制為既定之值。作為此種銅箔,可藉由調整壓延油之油膜當量進行壓延(高光澤壓延)或者藉由如化學蝕刻之化學研磨或磷酸溶液中之電解研磨而製作。如此,藉由使處理前之銅箔之TD之表面粗糙度(Rz)與MD之光澤度為上述範圍,可容易地控制處理後之銅箔之表面粗糙度(Rz)及表面積、Sv、△B。再者,於欲進一步縮小表面處理後之銅箔之表面粗糙度(Rz)(例如Rz=0.20μm)之情形時,將表面處理前之銅箔之處理側表面之TD之粗糙度(Rz)設為0.18~0.80μm,較佳為設為0.25~0.50μm,於壓延方向(MD)之入射角60度之光澤度為350~800%,較佳為500~800%,進而較先前之粗化處理提高電流密度,縮短粗化處理時間。Specifically, the surface roughness (Rz) of the TD of the copper foil before the surface treatment is 0.30 to 0.80 μm, preferably 0.30 to 0.50 μm, and the gloss at an incident angle of 60 degrees in the rolling direction (MD) is 350~ 800%, preferably 500 to 800%, and further, if the current density is increased and the roughening treatment time is shortened compared with the previous roughening treatment, the incident angle 60 of the rolling direction (MD) of the surface-treated copper foil after the surface treatment is performed. The gloss of the degree is 90~350%. Further, Sv and ΔB can be controlled to predetermined values. Such a copper foil can be produced by calendering (high gloss rolling) by adjusting the oil film equivalent of the rolling oil or by chemical polishing such as chemical etching or electrolytic polishing in a phosphoric acid solution. Thus, by setting the surface roughness (Rz) of the TD of the copper foil before the treatment and the gloss of the MD to the above range, the surface roughness (Rz) and surface area, Sv, Δ of the treated copper foil can be easily controlled. B. Further, in order to further reduce the surface roughness (Rz) of the surface-treated copper foil (for example, Rz = 0.20 μm), the roughness (Rz) of the TD of the treated side surface of the copper foil before the surface treatment is obtained. It is set to 0.18 to 0.80 μm, preferably 0.25 to 0.50 μm, and the gloss at an incident angle of 60 degrees in the rolling direction (MD) is 350 to 800%, preferably 500 to 800%, which is thicker than the previous one. The treatment increases the current density and shortens the roughening time.
又,粗化處理前之銅箔較佳為MD之60度光澤度為500~800%,更佳為501~800%,進而更佳為510~750%。若粗化處理前之銅箔之MD之60度光澤度未達500%,則與500%以上之情形相比,有上述樹脂之透明性變得不良之虞,若超過800%,則有產生難以進行製造之問題之虞。Further, the copper foil before the roughening treatment is preferably a 60-degree gloss of MD of 500 to 800%, more preferably 501 to 800%, and still more preferably 510 to 750%. If the 60-degree gloss of the MD of the copper foil before the roughening treatment is less than 500%, the transparency of the above-mentioned resin becomes poor as compared with the case of 500% or more, and if it exceeds 800%, it may be produced. It is difficult to carry out the problem of manufacturing.
再者,高光澤壓延可藉由將下式規定之油膜當量設為13000~24000以下而進行。再者,於欲進一步縮小表面處理後之銅箔之表面粗糙度(Rz)(例 如Rz=0.20μm)之情形時,藉由將下式規定之油膜當量設為12000以上且24000以下而進行高光澤壓延。Further, the high gloss rolling can be carried out by setting the oil film equivalent of the following formula to 13,000 to 24,000 or less. Furthermore, it is intended to further reduce the surface roughness (Rz) of the surface treated copper foil (example) In the case of Rz = 0.20 μm, high gloss rolling is performed by setting the oil film equivalent of the following formula to 12,000 or more and 24,000 or less.
油膜當量={(壓延油黏度[cSt]×(通板速度[mpm]+輥周邊速度[mpm])}/{(輥之嚙合角[rad])×(材料之降伏應力[kg/mm2 ])}Oil film equivalent = {(calender oil viscosity [cSt] × (passing plate speed [mpm] + roll peripheral speed [mpm])} / {(roller meshing angle [rad]) × (material drop stress [kg/mm 2 ])}
壓延油黏度[cSt]為40℃之動黏度。The rolling oil viscosity [cSt] is a dynamic viscosity of 40 °C.
將油膜當量設為13000~24000,因此只要利用使用低黏度之壓延油或減緩通板速度等公知之方法即可。Since the oil film equivalent is set to 13,000 to 24,000, a known method such as using a low-viscosity rolling oil or slowing the speed of the sheet can be used.
化學研磨係利用硫酸-過氧化氫-水系或氨-過氧化氫-水系等蝕刻液,較通常降低濃度,長時間地進行。The chemical polishing system uses an etching solution such as a sulfuric acid-hydrogen peroxide-water system or an ammonia-hydrogen peroxide-water system, and the concentration is lowered as usual, and the etching is carried out for a long period of time.
再者,上述控制方法亦與省略粗化處理,而藉由鍍敷(正常鍍敷而並非粗化鍍敷之鍍敷)將耐熱層或防銹層設置於銅箔之情況相同。Further, the above control method is also the same as the case where the heat-resistant layer or the rust-preventing layer is provided on the copper foil by plating (normal plating instead of plating of rough plating), and the roughening treatment is omitted.
處理表面例如粗化處理表面之MD之60度光澤度與TD之60度光澤度的比F(F=(MD之60度光澤度)/(TD之60度光澤度))較佳為0.80~1.40。若粗化處理表面之MD之60度光澤度與TD之60度光澤度的比F未達0.80,則與0.80以上之情形相比,有樹脂之透明性降低之虞。又,若該比F超過1.40,則與1.40以下之情形相比,有樹脂之透明性降低之虞。該比F更佳為0.90~1.35,進而更佳為1.00~1.30。The ratio of the 60 degree gloss of the MD of the treated surface such as the roughened surface to the 60 degree gloss of TD (F = (60 degree gloss of MD) / (60 degree gloss of TD)) is preferably 0.80~ 1.40. If the ratio F of the 60-degree gloss of the MD of the roughened surface to the 60-degree gloss of TD is less than 0.80, the transparency of the resin is lowered as compared with the case of 0.80 or more. Moreover, when the ratio F exceeds 1.40, the transparency of the resin is lowered as compared with the case of 1.40 or less. The ratio F is preferably from 0.90 to 1.35, and more preferably from 1.00 to 1.30.
(3)粒子之表面積比(3) Surface area ratio of particles
粗化粒子之表面積A與自銅箔表面側俯視粗化粒子時所得之面積B的比A/B對上述樹脂之透明性造成大幅影響。即,若表面粗糙度Rz相同,則比A/B越小之銅箔,上述樹脂之透明性越良好。因此,上述構成之表面處理銅箔較佳為該比A/B為1.90~2.40,更佳為2.00~2.20。The ratio A/B of the surface area A of the roughened particles and the area B obtained when the roughened particles are viewed from the surface side of the copper foil greatly affects the transparency of the above resin. That is, when the surface roughness Rz is the same, the transparency of the resin is better as the copper foil having a smaller A/B ratio. Therefore, the surface-treated copper foil having the above configuration preferably has a ratio A/B of 1.90 to 2.40, more preferably 2.00 to 2.20.
藉由控制粒子形成時之電流密度與鍍敷時間,可決定粒子之形態或形成密度,控制上述表面粗糙度Rz、光澤度及粒子之面積比A/B。By controlling the current density and the plating time at the time of particle formation, the morphology or formation density of the particles can be determined, and the surface roughness Rz, the glossiness, and the area ratio A/B of the particles can be controlled.
如上所述,將粗化粒子之表面積A與自銅箔表面側俯視粗化粒子時所得之面積B的比A/B控制為1.90~2.40而增大表面之凹凸,將粗化處理表面之TD的平均粗糙度Rz控制為0.30~0.80μm而去掉表面極粗之部分,另一方面,可將粗化處理表面之光澤度提高為80~350%。藉由進行此種控制,可縮小本發明之表面處理銅箔中之粗化處理表面之粗化粒子的粒徑。該粗化粒子之粒徑對蝕刻去除銅箔後之樹脂透明性造成影響,但此種控制係表示於適當範圍內縮小粗化粒子之粒徑,因此,蝕刻去除銅箔後之樹脂透明性變得更良好,並且剝離強度亦變得更良好。As described above, the ratio A/B of the surface area A of the roughened particles and the area B obtained when the roughened particles are viewed from the surface side of the copper foil is controlled to 1.90 to 2.40, and the unevenness of the surface is increased, and the TD of the roughened surface is increased. The average roughness Rz is controlled to be 0.30 to 0.80 μm to remove the extremely thick portion of the surface, and on the other hand, the gloss of the roughened surface can be increased to 80 to 350%. By performing such control, the particle size of the roughened particles of the roughened surface in the surface-treated copper foil of the present invention can be reduced. The particle size of the roughened particles affects the transparency of the resin after etching and removing the copper foil. However, such control means that the particle size of the roughened particles is reduced within an appropriate range, and therefore, the transparency of the resin after etching and removing the copper foil is changed. It is better and the peel strength is also better.
如上所述,將粗化粒子之表面積A與自銅箔表面側俯視粗化粒子時所得之面積B的比A/B控制為1.90~2.40而增大表面之凹凸,將粗化處理表面之TD的平均粗糙度Rz控制為0.30~0.80μm而去掉表面極粗之部分,另一方面,可將粗化處理表面之光澤度提高為80~350%。藉由進行此種控制,可縮小本發明之表面處理銅箔中之粗化處理表面之粗化粒子的粒徑。該粗化粒子之粒徑對蝕刻去除銅箔後之樹脂透明性造成影響,但此種控制係表示於適當範圍內縮小粗化粒子之粒徑,因此,蝕刻去除銅箔後之樹脂透明性變得更良好,並且剝離強度亦變得更良好。As described above, the ratio A/B of the surface area A of the roughened particles and the area B obtained when the roughened particles are viewed from the surface side of the copper foil is controlled to 1.90 to 2.40, and the unevenness of the surface is increased, and the TD of the roughened surface is increased. The average roughness Rz is controlled to be 0.30 to 0.80 μm to remove the extremely thick portion of the surface, and on the other hand, the gloss of the roughened surface can be increased to 80 to 350%. By performing such control, the particle size of the roughened particles of the roughened surface in the surface-treated copper foil of the present invention can be reduced. The particle size of the roughened particles affects the transparency of the resin after etching and removing the copper foil. However, such control means that the particle size of the roughened particles is reduced within an appropriate range, and therefore, the transparency of the resin after etching and removing the copper foil is changed. It is better and the peel strength is also better.
[銅箔表面均方根高度Rq][copper foil surface root mean square height Rq]
本發明之表面處理銅箔較佳為將至少一個表面之均方根高度Rq控制為0.14~0.63μm。藉由此種構成,剝離強度提高而與樹脂良好地接著,且,利用蝕刻去除銅箔後之樹脂之透明性提高。其結果,經由透過該樹脂識別到之 定位圖案而進行IC晶片搭載時之位置對準等變得容易。若均方根高度Rq未達0.14μm,則會產生銅箔表面之粗化處理變得不充分,無法與樹脂充分地接著之問題。另一方面,若均方根高度Rq超過0.63μm,則利用蝕刻去除銅箔後之樹脂表面之凹凸增大,結果產生樹脂之透明性變得不良之問題。粗化處理表面均方根高度Rq更佳為0.25~0.60μm,進而更佳為0.32~0.56μm。The surface-treated copper foil of the present invention preferably has a root mean square height Rq of at least one surface of 0.14 to 0.63 μm. According to this configuration, the peel strength is improved and the resin is satisfactorily adhered to, and the transparency of the resin after the copper foil is removed by etching is improved. As a result, it is recognized by passing through the resin. It is easy to position the pattern and the like when mounting the IC wafer. When the root mean square height Rq is less than 0.14 μm, the roughening treatment of the surface of the copper foil may be insufficient, and the problem of insufficient adhesion to the resin may occur. On the other hand, when the root mean square height Rq exceeds 0.63 μm, the unevenness of the surface of the resin after the copper foil is removed by etching increases, and as a result, the transparency of the resin becomes poor. The surface root height Rq of the roughening treatment is more preferably 0.25 to 0.60 μm, and still more preferably 0.32 to 0.56 μm.
此處,表面均方根高度Rq係依據JIS B 0601(2001)利用非接觸式粗糙度計進行之表面粗糙度測定中顯示凹凸之程度的指標,以下述式表示,係表面粗糙度之Z軸方向之凹凸(凸部)高度,且為基準長度lr中凸部之高度Z(x)之均方根。Here, the surface root mean square height Rq is an index indicating the degree of unevenness in the surface roughness measurement by the non-contact type roughness meter according to JIS B 0601 (2001), and is expressed by the following formula, and is the Z-axis of the surface roughness. The height of the unevenness (convex portion) of the direction is the root mean square of the height Z(x) of the convex portion in the reference length lr.
基準長度lr中凸部之高度之均方根高度Rq:√{(1/lr)×∫ Z2 (x)dx(其中積分(integral)為0至lr之累積值)}The root mean square height Rq of the height of the convex portion in the reference length lr: √ {(1/lr) × ∫ Z 2 (x) dx (wherein integral is a cumulative value of 0 to lr)}
再者,於表面處理未進行粗化之情形時,如上所述般以使鍍敷皮膜無法形成凹凸之方式於低電流密度下進行處理,又,於進行粗化處理之情形時,藉由形成高電流密度而使粗化粒子小型化,並於短時間內進行鍍敷,藉此可進行粗糙度較小之表面處理,從而控制表面均方根高度Rq。Further, when the surface treatment is not roughened, the plating film is treated at a low current density so that the plating film cannot be formed as described above, and when the roughening treatment is performed, by forming The high current density causes the roughened particles to be miniaturized, and plating is performed in a short time, whereby surface treatment with less roughness can be performed, thereby controlling the surface root mean square height Rq.
[銅箔表面之偏斜度Rsk][The skewness of the copper foil surface Rsk]
偏斜度Rsk表示由均方根高度Rq之立方進行無因次化而得之基準長度的Z(x)立方平均。The skewness Rsk represents the Z(x) cubic average of the reference length obtained by dimensionless calculation of the cube root mean square height Rq.
均方根高度Rq係依據JIS B 0601(2001)利用非接觸式粗糙度計進行之表面粗糙度測定中顯示凹凸之程度的指標,以下述(A)式表示,係表面粗糙度之Z軸方向之凹凸(凸部)高度,且為基準長度lr中凸部之高度Z(x)之均方根。The root mean square height Rq is an index indicating the degree of unevenness in the surface roughness measurement by the non-contact type roughness meter according to JIS B 0601 (2001), and is expressed by the following formula (A), and is the Z-axis direction of the surface roughness. The height of the unevenness (protrusion) is the root mean square of the height Z(x) of the convex portion in the reference length lr.
基準長度lr中凸部之高度之均方根高度Rq:
偏斜度Rsk係使用均方根高度Rq利用以下(B)式表示。The skewness Rsk is expressed by the following formula (B) using the root mean square height Rq.
銅箔表面之偏斜度Rsk係於以銅箔表面之凹凸面之平均面為中心時顯示銅箔表面之凹凸之對象性的指標。如圖5所示,可謂若Rsk<0,則高度分佈相對於平均面偏上側,若Rsk>0,則高度分佈相對於平均面偏下側。於對上側之偏差較大時,將銅箔貼附於聚醯亞胺(PI)後進行蝕刻去除之情形時,PI表面呈現凹形態,若自光源照射光,PI內部之漫反射會變大。於對下側之偏差較大時,將銅箔貼附聚醯亞胺(PI)後進行蝕刻去除之情形時,PI表面呈現凸形態,若自光源照射光,PI表面之漫反射會變大。The skewness Rsk of the surface of the copper foil is an index indicating the objectivity of the unevenness on the surface of the copper foil when the average surface of the uneven surface of the copper foil is centered. As shown in FIG. 5, when Rsk<0, the height distribution is shifted to the upper side with respect to the average plane, and if Rsk>0, the height distribution is shifted to the lower side with respect to the average plane. When the deviation from the upper side is large, when the copper foil is attached to the polyimide and then removed by etching, the surface of the PI is concave. If the light is irradiated from the light source, the diffuse reflection inside the PI becomes large. . When the deviation from the lower side is large, when the copper foil is attached to the polyimide and then removed by etching, the surface of the PI is convex. If the light is irradiated from the light source, the diffuse reflection of the PI surface becomes large. .
本發明之表面處理銅箔較佳為將至少一個表面之偏斜度Rsk控制為-0.35~0.53。藉由此種構成,剝離強度提高而與樹脂良好地接著,且,利用蝕刻去除銅箔後之樹脂之透明性提高。其結果,經由透過該樹脂識別到之定位圖案而進行IC晶片搭載時之位置對準等變得容易。若偏斜度Rsk未達-0.35,則產生銅箔表面之粗化處理等表面處理變得不充分,無法與樹脂充分地接著之問題。另一方面,若偏斜度Rsk超過0.53,則利用蝕刻去除銅箔後之樹脂表面之凹凸增大,結果產生樹脂之透明性變得不良之問題。經表 面處理之銅箔表面之偏斜度Rsk較佳為-0.30以上,較佳為-0.20以上,較佳為-0.10以下。又,經表面處理之銅箔表面之偏斜度Rsk較佳為0.15以上,較佳為0.20以上,較佳為0.50以下,較佳為0.45以下,較佳為0.40以下,進而更佳為0.39以下。又,經表面處理之銅箔表面之偏斜度Rsk較佳為-0.30以上,較佳為0.50以下,更佳為0.39以下。The surface-treated copper foil of the present invention preferably controls the skewness Rsk of at least one surface to be -0.35 to 0.53. According to this configuration, the peel strength is improved and the resin is satisfactorily adhered to, and the transparency of the resin after the copper foil is removed by etching is improved. As a result, it is easy to perform alignment and the like at the time of mounting the IC wafer via the positioning pattern recognized by the resin. When the skewness Rsk is less than -0.35, surface treatment such as roughening treatment of the surface of the copper foil is insufficient, and the problem of insufficient adhesion to the resin cannot be obtained. On the other hand, when the skewness Rsk exceeds 0.53, the unevenness of the surface of the resin after removal of the copper foil by etching increases, and as a result, the transparency of the resin becomes poor. Table The skewness Rsk of the surface of the surface treated copper foil is preferably -0.30 or more, preferably -0.20 or more, preferably -0.10 or less. Further, the surface roughness of the copper foil surface is preferably 0.15 or more, preferably 0.20 or more, preferably 0.50 or less, preferably 0.45 or less, preferably 0.40 or less, and further preferably 0.39 or less. . Further, the skewness Rsk of the surface of the surface-treated copper foil is preferably -0.30 or more, preferably 0.50 or less, more preferably 0.39 or less.
再者,於表面處理未進行粗化之情形時,如上所述般以使鍍敷皮膜無法存在凹凸之方式於低電流密度下進行處理,又,於進行粗化處理之情形時,藉由形成高電流密度而使粗化粒子小型化,於短時間內進行鍍敷,藉此可進行粗糙度較小之表面處理,從而控制表面之偏斜度Rsk。Further, when the surface treatment is not roughened, the plating film is treated at a low current density so that the plating film cannot have irregularities as described above, and when the roughening treatment is performed, by forming The high current density causes the roughened particles to be miniaturized, and plating is performed in a short time, whereby surface treatment with less roughness can be performed, thereby controlling the skewness Rsk of the surface.
[銅箔表面之表面積G與凸部體積E的比E/G][The ratio of the surface area G of the copper foil surface to the volume E of the convex portion E/G]
本發明之表面處理銅箔較佳為於至少一個表面上將俯視上述表面時所得之表面積G與上述表面之凸部體積E的比E/G控制為2.11~23.91。藉由此種構成,剝離強度提高而與樹脂良好地接著,且,利用蝕刻去除銅箔後之樹脂之透明性提高。其結果,經由透過該樹脂識別到之定位圖案而進行之IC晶片搭載時之位置對準等變得容易。若比E/G未達2.11μm,則產生銅箔表面之粗化處理變得不充分,無法充分地與樹脂接著之問題。另一方面,若比E/G超過23.91μm,則利用蝕刻去除銅箔後之樹脂表面之凹凸增大,結果產生樹脂之透明性變得不良之問題。比E/G更佳為2.95~21.42μm,進而更佳為10.54~13.30μm。The surface-treated copper foil of the present invention preferably has a ratio E/G of a surface area G obtained by observing the surface on at least one surface to a convex portion volume E of the surface of 2.11 to 23.91. According to this configuration, the peel strength is improved and the resin is satisfactorily adhered to, and the transparency of the resin after the copper foil is removed by etching is improved. As a result, it is easy to position and the like at the time of mounting the IC wafer via the positioning pattern recognized by the resin. When the ratio E/G is less than 2.11 μm, the roughening treatment of the surface of the copper foil is insufficient, and the problem of the resin may not be sufficiently caused. On the other hand, when the ratio E/G exceeds 23.91 μm, the unevenness of the surface of the resin after removal of the copper foil by etching increases, and as a result, the transparency of the resin becomes poor. It is preferably 2.95 to 21.42 μm, and more preferably 10.54 to 13.30 μm, more preferably than E/G.
此處,所謂「俯視表面時所得之表面積G」,係指以某高度(閾值)為基準成為凸部之部分或成為凹部之部分的表面積之合計。Here, the "surface area G obtained when the surface is viewed from the surface" refers to the total of the surface area which becomes a convex portion based on a certain height (threshold value) or a portion which becomes a concave portion.
又,所謂「表面之凸部體積E」,係指以某高度(閾值)為基準成為凸 部之部分或成為凹部之部分的體積之合計。In addition, "the convex volume E of the surface" means that the convexity is convex based on a certain height (threshold value). The sum of the parts of the part or the part that becomes the part of the recess.
再者,表面之表面積G與凸部體積E的比E/G之控制係如上所述般藉由調整粗化粒子之電流密度與鍍敷時間而進行。若以高電流密度進行鍍敷處理,則獲得較小之粗化粒子,若以低電流密度進行鍍敷處理,則獲得較大之粗化粒子。於該等條件下形成之粒子之個數係根據鍍敷處理時間而決定,因此凸部體積E係根據電流密度與鍍敷時間之組合而決定。Further, the control of the ratio E/G of the surface area G of the surface to the volume E of the convex portion is performed by adjusting the current density of the roughened particles and the plating time as described above. When the plating treatment is performed at a high current density, smaller roughened particles are obtained, and when the plating treatment is performed at a low current density, large roughened particles are obtained. The number of particles formed under these conditions is determined according to the plating treatment time. Therefore, the convex portion volume E is determined according to the combination of the current density and the plating time.
[銅箔表面之平均粗糙度Rz][Average roughness Rz of copper foil surface]
本發明之表面處理銅箔可為無粗化處理銅箔,亦可為形成有粗化粒子之粗化處理銅箔,較佳為粗化處理表面之TD的平均粗糙度Rz為0.20~0.64μm。藉由此種構成,剝離強度進一步提高而與樹脂良好地接著,且,利用蝕刻去除銅箔後之樹脂之透明性進一步提高。其結果,經由透過該樹脂識別到之定位圖案而進行之IC晶片搭載時之位置對準等變得更容易。若TD之平均粗糙度Rz未達0.20μm,則有銅箔表面之粗化處理不充分之虞,有產生無法與樹脂充分地接著之問題之虞。另一方面,若TD之平均粗糙度Rz超過0.64μm,則有利用蝕刻去除銅箔後之樹脂表面之凹凸增大之虞,結果有產生樹脂之透明性變得不良之問題之虞。處理表面之TD之平均粗糙度Rz更佳為0.40~0.62μm,進而更佳為0.46~0.55μm。The surface-treated copper foil of the present invention may be a roughened copper foil or a roughened copper foil formed with roughened particles. Preferably, the average roughness Rz of the roughened surface is 0.20 to 0.64 μm. . According to this configuration, the peel strength is further improved and the resin is satisfactorily adhered to, and the transparency of the resin after the copper foil is removed by etching is further improved. As a result, it is easier to position the IC wafer during mounting by the positioning pattern recognized by the resin. When the average roughness Rz of the TD is less than 0.20 μm, the roughening treatment of the surface of the copper foil may be insufficient, and there is a problem that the resin cannot be sufficiently adhered to the resin. On the other hand, when the average roughness Rz of the TD exceeds 0.64 μm, the unevenness of the surface of the resin after the removal of the copper foil by etching is increased, and as a result, there is a problem that the transparency of the resin is deteriorated. The average roughness Rz of the TD of the treated surface is preferably from 0.40 to 0.62 μm, more preferably from 0.46 to 0.55 μm.
為了進一步提高本發明之識別性之效果,對表面處理前之銅箔處理側表面之TD之粗糙度(Rz)及光澤度進行控制。具體而言,表面處理前之銅箔之TD(與壓延方向垂直之方向(銅箔之寬度方向),對電解銅箔而言為電解銅箔製造裝置中與銅箔之通箔方向垂直之方向)之表面粗糙度(Rz)為0.20~0.55μm,較佳為020~0.42μm。作為此種銅箔,藉由調 整壓延油之油膜當量進行壓延(高光澤壓延)或調整壓延輥之表面粗糙度進行壓延,或者藉由如化學蝕刻之化學研磨或磷酸溶液中之電解研磨而製作。如此,可藉由使處理前之銅箔之TD之表面粗糙度(Rz)為上述範圍,使處理前之銅箔之TD之光澤度為下述範圍,而控制處理後之銅箔之表面粗糙度(Rz)、表面積、Sv、Rq、Rsk、銅箔表面之表面積G與凸部體積E的比E/G。In order to further improve the visibility of the present invention, the roughness (Rz) and gloss of the TD of the copper foil-treated side surface before the surface treatment are controlled. Specifically, the TD of the copper foil before the surface treatment (the direction perpendicular to the rolling direction (the width direction of the copper foil) is perpendicular to the direction of the foil passing through the copper foil in the electrolytic copper foil manufacturing apparatus for the electrolytic copper foil. The surface roughness (Rz) is 0.20 to 0.55 μm, preferably 020 to 0.42 μm. As such a copper foil, by adjusting The oil film equivalent of the calendering oil is calendered (high gloss calendering) or the surface roughness of the calendering roll is adjusted for calendering, or by chemical polishing such as chemical etching or electrolytic polishing in a phosphoric acid solution. Thus, by setting the surface roughness (Rz) of the TD of the copper foil before the treatment to the above range, the TD gloss of the copper foil before the treatment is set to the following range, and the surface roughness of the treated copper foil is controlled. Degree (Rz), surface area, Sv, Rq, Rsk, ratio of surface area G of the surface of the copper foil to the volume E of the convex portion E/G.
又,表面處理前之銅箔中,TD之60度光澤度為400~710%,較佳為500~710%。若表面處理前之銅箔之MD之60度光澤度未達400%,則與400%以上之情形相比,有上述樹脂之透明性變得不良之虞,若超過710%,則有產生難以製造之問題之虞。Further, in the copper foil before the surface treatment, the 60 degree gloss of TD is 400 to 710%, preferably 500 to 710%. If the 60-degree gloss of the MD of the copper foil before the surface treatment is less than 400%, the transparency of the above-mentioned resin becomes poor as compared with the case of 400% or more, and if it exceeds 710%, it is difficult to produce. The problem of manufacturing.
再者,高光澤壓延可藉由將以下之式規定之油膜當量設為13000~24000以下而進行。Further, the high gloss rolling can be carried out by setting the oil film equivalent specified by the following formula to 13,000 to 24,000 or less.
油膜當量={(壓延油黏度[cSt])×(通板速度[mpm]+輥周邊速度[mpm])}/{(輥之嚙合角[rad])×(材料之降伏應力[kg/mm2 ])}Oil film equivalent = {(calendering oil viscosity [cSt]) × (passing plate speed [mpm] + roll peripheral speed [mpm])} / {(roller meshing angle [rad]) × (material's lodging stress [kg/mm] 2 ])}
壓延油黏度[cSt]為40℃之動黏度。The rolling oil viscosity [cSt] is a dynamic viscosity of 40 °C.
為了將油膜當量設為13000~24000,可利用使用低黏度之壓延油或減緩通板速度等公知之方法即可。In order to set the oil film equivalent to 13,000 to 24,000, a known method such as using a low-viscosity rolling oil or slowing the speed of the sheet can be used.
壓延輥之表面粗糙度例如以算術平均粗糙度Ra(JIS B0601)計可設為0.01~0.25μm。於壓延輥之算術平均粗糙度Ra之值較大之情形時,有表面處理前之銅箔之表面之TD之粗糙度(Rz)增大,表面處理前之銅箔之表面之TD之60度光澤度降低之傾向。又,於壓延輥之算術平均粗糙度Ra之值較小之情形時,有表面處理前之銅箔之表面之TD之粗糙度(Rz)減小,表 面處理前之銅箔之表面之TD之60度光澤度提高之傾向。The surface roughness of the calender roll can be, for example, 0.01 to 0.25 μm in terms of arithmetic mean roughness Ra (JIS B0601). When the value of the arithmetic mean roughness Ra of the calender roll is large, the roughness (Rz) of the surface of the copper foil before the surface treatment is increased, and the surface of the copper foil before the surface treatment is 60 degrees of the TD. The tendency to reduce gloss. Further, when the value of the arithmetic mean roughness Ra of the calender roll is small, the roughness (Rz) of the surface of the copper foil before the surface treatment is reduced, The tendency of the TD of 60 degree gloss of the surface of the copper foil before the surface treatment to be improved.
化學研磨係利用硫酸-過氧化氫-水系或氨-過氧化氫-水系等蝕刻液,較通常降低濃度,長時間地進行。The chemical polishing system uses an etching solution such as a sulfuric acid-hydrogen peroxide-water system or an ammonia-hydrogen peroxide-water system, and the concentration is lowered as usual, and the etching is carried out for a long period of time.
[亮度曲線之斜率][Slope of brightness curve]
本發明之表面處理銅箔係貼合於聚醯亞胺基材樹脂之兩面後,利用蝕刻去除兩面之銅箔,將印刷有線狀標記之印刷物鋪設於露出之上述聚醯亞胺基板之下,隔著上述聚醯亞胺基板利用CCD攝影機對印刷物進行攝影時,對由攝影獲得之圖像,沿與觀察到之線狀標記延伸方向垂直之方向測定各觀察地點之亮度而製成觀察地點-亮度圖表,於該圖表中,將自標記之端部至未描繪標記之部分產生的亮度曲線之頂部平均值Bt與底部平均值Bb之差設為△B(△B=Bt-Bb),於觀察地點-亮度圖表中,將表示亮度曲線與Bt之交點內最接近上述線狀標記之交點設為t1,將自亮度曲線與Bt之交點至以Bt為基準之0.1△B深度範圍內表示亮度曲線與0.1△B之交點內最接近上述線狀標記之交點設為t2,此時,(1)式定義之Sv為3.5以上。After the surface-treated copper foil of the present invention is applied to both sides of the resin of the polyimide substrate, the copper foil on both sides is removed by etching, and the printed matter printed with the linear mark is laid under the exposed polyimide substrate. When the printed matter is photographed by the CCD camera through the polyimide substrate, the brightness of each observation point is measured in an image perpendicular to the direction in which the linear mark is observed to be observed. In the graph, the difference between the top average Bt and the bottom average Bb of the luminance curve generated from the end portion of the mark to the portion where the mark is not drawn is ΔB (ΔB=Bt-Bb). In the observation point-brightness chart, the intersection point indicating the closest to the above-mentioned linear mark in the intersection of the brightness curve and Bt is set to t1, and the brightness is expressed from the intersection of the brightness curve and Bt to the depth of 0.1 ΔB based on Bt. The intersection point of the curve closest to the above-mentioned linear mark in the intersection of the curve and 0.1 ΔB is t2, and at this time, the Sv defined by the formula (1) is 3.5 or more.
Sv=(△B×0.1)/(t1-t2) (1)Sv=(△B×0.1)/(t1-t2) (1)
再者,於上述觀察位置-亮度圖表中,橫軸表示位置資訊(像素×0.1),縱軸表示亮度(灰階)之值。Further, in the above-described observation position-luminance graph, the horizontal axis represents position information (pixel × 0.1), and the vertical axis represents the value of luminance (gray scale).
此處,利用圖對「亮度曲線之頂部平均值Bt」、「亮度曲線之底部平均值Bb」、及下述「t1」、「t2」、「Sv」進行說明。Here, the "top average value Bt of the luminance curve", the "bottom average value Bb of the luminance curve", and the following "t1", "t2", and "Sv" will be described with reference to the drawings.
圖1(a)及圖1(b)係表示對將標記之寬度設為約0.3mm之情形時之Bt及Bb進行定義的模式圖。於將標記之寬度設為約0.3mm之情形時,有如圖1(a)所示般成為V型之亮度曲線,及如圖1(b)所示般成為具有底部 之亮度曲線之情況。於任一情況下,「亮度曲線之頂部平均值Bt」均表示自距離標記兩側之端部位置50μm之位置起以30μm間隔測定5個部位(兩側合計為10個部位)時之亮度的平均值。另一方面,「亮度曲線之底部平均值Bb」於亮度曲線如圖1(a)所示般成為V型之情形時,表示該V字之凹部之前段部的亮度之最低值,於圖1(b)之具有底部之情形時,表示約0.3mm之中心部之值。FIGS. 1(a) and 1(b) are schematic diagrams showing the definition of Bt and Bb when the width of the mark is set to about 0.3 mm. When the width of the mark is set to about 0.3 mm, there is a V-shaped brightness curve as shown in FIG. 1(a), and has a bottom as shown in FIG. 1(b). The case of the brightness curve. In either case, the "top average value Bt of the brightness curve" indicates the brightness at the time of measuring 5 points (the total of 10 parts on both sides) at intervals of 30 μm from the position of the end position on both sides of the distance mark at 50 μm. average value. On the other hand, the "base value Bb of the brightness curve" indicates the lowest value of the brightness of the front portion of the V-shaped concave portion when the brightness curve is V-shaped as shown in Fig. 1(a). (b) In the case of having a bottom, it means a value of a center portion of about 0.3 mm.
圖2係表示定義t1及t2及Sv之模式圖。「t1(像素×0.1)」表示亮度曲線與Bt之交點內最接近上述線狀標記之交點以及該交點之位置的值(上述觀察地點-亮度圖表之橫軸之值)。「t2(像素×0.1)」為於自亮度曲線與Bt之交點至以Bt為基準之0.1△B深度範圍內表示亮度曲線與0.1△B之交點內最接近上述線狀標記之交點及該交點之位置的值(上述觀察地點-亮度圖表之橫軸之值)。此時,以連結t1及t2之線來表示之亮度曲線之斜率係利用y軸方向為0.1△B、x軸方向為(t1-t2)來進行計算的Sv(灰階/像素×0.1)來定義。再者,橫軸之1像素相當於10μm長度。又,關於Sv,測定標記之兩側並採用較小值。再來,於亮度曲線之形狀不穩定且存在複數個上述「亮度曲線與Bt之交點」之情形時,採用最接近標記之交點。Fig. 2 is a schematic diagram showing definitions of t1, t2, and Sv. "t1 (pixel × 0.1)" indicates the value of the intersection of the brightness curve and Bt closest to the above-mentioned linear mark and the position of the intersection (the above-mentioned observation point - the value of the horizontal axis of the brightness chart). "t2 (pixel × 0.1)" is the intersection point from the intersection of the brightness curve and Bt to the depth of 0.1 ΔB based on Bt, and the intersection of the brightness curve and the 0.1 ΔB closest to the above-mentioned linear mark and the intersection point The value of the position (the above observation point - the value of the horizontal axis of the brightness chart). In this case, the slope of the luminance curve expressed by the line connecting t1 and t2 is calculated by Sv (gray scale/pixel × 0.1) in which the y-axis direction is 0.1 ΔB and the x-axis direction is (t1-t2). definition. Furthermore, one pixel on the horizontal axis corresponds to a length of 10 μm. Further, regarding Sv, both sides of the mark are measured and a small value is used. Further, when the shape of the luminance curve is unstable and there are a plurality of the above-mentioned "intersection points of the luminance curve and Bt", the intersection point closest to the mark is used.
於利用CCD攝影機拍攝到之上述圖像中,未附有標記之部分亮度較高,但於剛到達標記端部時亮度降低。若聚醯亞胺基板之識別性良好,則明確地觀察到此種亮度之降低狀態。另一方面,若聚醯亞胺基板之識別性不良,則亮度於標記端部附近並不瞬間自「高」突然降至「低」,而為降低之狀態平緩,亮度之降低狀態變得不明確。In the above-described image captured by the CCD camera, the portion not marked with a high brightness is high, but the brightness is lowered just after reaching the end portion of the mark. When the visibility of the polyimide substrate is good, such a lowered state of brightness is clearly observed. On the other hand, if the recognition property of the polyimide substrate is poor, the brightness does not suddenly decrease from "high" to "low" in the vicinity of the mark end portion, but the state of the reduction is gentle, and the state of the brightness is not lowered. clear.
本發明係基於此種見解,對於貼合並去除本發明之表面處理銅箔之聚 醯亞胺基板,將附有標記之印刷物至於其下,根據隔著聚醯亞胺基板利用CCD攝影機所攝之上述標記部分之圖像獲得觀察地點-亮度圖表,對該圖表中描繪之標記端部附近之亮度曲線的斜率進行控制。更詳細而言,將亮度曲線之頂部平均值Bt與底部平均值Bb之差設為△B(△B=Bt-Bb),於觀察地點-亮度圖表中,將表示亮度曲線與Bt之交點內最接近上述線狀標記之交點之位置的值(上述觀察地點-亮度圖表之橫軸之值)設為t1,將自亮度曲線與Bt之交點至以Bt為基準之0.1△B深度範圍內表示亮度曲線與0.1△B之交點內最接近上述線狀標記之交點之位置的值(上述觀察地點-亮度圖表之橫軸之值)設為t2,此時,上述(1)式定義之Sv為3.5以上。根據此種構成,不受基板樹脂之種類或厚度之影響,而使利用CCD攝影機獲得之隔著聚醯亞胺之標記之識別力提高。因此,可製作識別性優異之聚醯亞胺基板,於利用電子基板製造步驟等對聚醯亞胺基板進行既定之處理之情形時,利用標記獲得之定位精度提高,藉此獲得良率提高等效果。Sv較佳為3.9以上,更佳為4.5以上,進而更佳為5.0以上,進而更佳為5.5以上。Sv之上限無需特別限定,例如為70以下、30以下、15以下、10以下。根據此種構成,標記與未標記之部分之邊界更明確,定位精度提高,由標記圖像辨識導致之誤差減少,可更準確地進行位置對準。The present invention is based on the insight that the combination of the surface treated copper foil of the present invention is removed. The yttrium imide substrate is provided with a printed matter with a mark thereon, and an observation point-brightness chart is obtained from the image of the mark portion taken by the CCD camera via the polyimide substrate, and the mark end depicted in the chart The slope of the brightness curve near the part is controlled. More specifically, the difference between the top average value Bt of the luminance curve and the bottom average value Bb is set to ΔB (ΔB=Bt-Bb), and in the observation point-brightness graph, it will represent the intersection of the luminance curve and Bt. The value closest to the position of the intersection of the linear marks (the above-mentioned observation point - the value of the horizontal axis of the luminance chart) is set to t1, and is expressed from the intersection of the luminance curve and Bt to the depth of 0.1 ΔB based on Bt. The value of the position of the intersection of the brightness curve and the 0.1ΔB closest to the intersection of the linear marks (the value of the observation point-the horizontal axis of the brightness chart) is t2, and the Sv defined by the above formula (1) is 3.5 or more. According to this configuration, the recognition power of the mark sandwiched between the polyimides obtained by the CCD camera is improved without being affected by the type or thickness of the substrate resin. Therefore, it is possible to produce a polyimide substrate having excellent visibility, and when the polyimide substrate is subjected to predetermined treatment by an electronic substrate manufacturing step or the like, the positioning accuracy obtained by the marking is improved, thereby improving the yield, and the like. effect. Sv is preferably 3.9 or more, more preferably 4.5 or more, still more preferably 5.0 or more, and still more preferably 5.5 or more. The upper limit of Sv is not particularly limited, and is, for example, 70 or less, 30 or less, 15 or less, or 10 or less. According to this configuration, the boundary between the mark and the unmarked portion is more clear, the positioning accuracy is improved, the error caused by the mark image recognition is reduced, and the positional alignment can be performed more accurately.
[銅箔表面之面積比][Area ratio of copper foil surface]
銅箔之表面處理側之表面之三維表面積D與二維表面積C的比D/C對上述樹脂之透明性造成大幅影響。即,若表面粗糙度Rz相同,則比D/C越小之銅箔,上述樹脂之透明性變得越良好。因此,本發明之表面處理銅箔較佳為該比D/C為1.0~1.7,更佳為1.0~1.6。此處,表面處理側之表 面之三維表面積D與二維表面積C的比D/C於例如對該表面進行粗化處理之情形時,亦可稱為粗化粒子之表面積D與自銅箔表面側俯視銅箔時所得之面積C的比D/C。The ratio D/C of the three-dimensional surface area D of the surface on the surface of the copper foil to the two-dimensional surface area C greatly affects the transparency of the above resin. In other words, when the surface roughness Rz is the same, the transparency of the resin becomes better as the copper foil having a smaller D/C ratio. Therefore, the surface-treated copper foil of the present invention preferably has a ratio D/C of 1.0 to 1.7, more preferably 1.0 to 1.6. Here, the surface treatment side table When the ratio D/C of the three-dimensional surface area D of the surface to the two-dimensional surface area C is, for example, roughened, the surface area D of the roughened particles and the copper foil from the surface side of the copper foil are obtained. The ratio of area C is D/C.
藉由於形成粗化粒子時等表面處理時控制表面處理之電流密度與鍍敷時間,來決定表面處理後之銅箔之表面狀態或粗化粒子之形態或形成密度,而可控制上述表面粗糙度Rz、光澤度及銅箔表面之面積比D/C、Sv、△B、Rq、Rsk、銅箔表面之表面積G與凸部體積E的比E/G。The surface roughness of the surface treated copper foil or the morphology or formation density of the roughened particles is determined by controlling the current density and the plating time of the surface treatment during the surface treatment such as the formation of the roughened particles, and the surface roughness can be controlled. Rz, gloss and area ratio of the surface of the copper foil D/C, Sv, ΔB, Rq, Rsk, the ratio of the surface area G of the surface of the copper foil to the volume E of the convex portion E/G.
[蝕刻因數][etching factor]
於使用銅箔形成電路時之蝕刻因數之值大的情形時,蝕刻時產生之電路的底部之拖尾減少,因此可縮窄電路間之空間。因此,蝕刻因數之值大者適合利用精細圖案形成電路,故而較佳。本發明之表面處理銅箔中,例如,蝕刻因數之值較佳為1.8以上,較佳為2.0以上,較佳為2.2以上,較佳為2.3以上,更佳為2.4以上。In the case where the value of the etching factor when the copper foil is used to form the circuit is large, the tail of the circuit generated at the time of etching is reduced, so that the space between the circuits can be narrowed. Therefore, it is preferable that the value of the etching factor is large to form a circuit using a fine pattern. In the surface-treated copper foil of the present invention, for example, the value of the etching factor is preferably 1.8 or more, preferably 2.0 or more, preferably 2.2 or more, preferably 2.3 or more, and more preferably 2.4 or more.
再者,印刷配線板或覆銅積層板可藉由將樹脂熔融並去除,而針對銅電路或銅箔表面測定上述粒子之面積比(A/B)、光澤度、表面粗糙度Rz、Sv、△B、Rq、Rsk、銅箔表面之表面積G與凸部體積E的比E/G。Further, the printed wiring board or the copper clad laminate can measure the area ratio (A/B), gloss, surface roughness Rz, Sv of the above-mentioned particles for the surface of the copper circuit or the copper foil by melting and removing the resin. ΔB, Rq, Rsk, ratio E/G of the surface area G of the surface of the copper foil to the volume E of the convex portion.
[傳輸損耗][transmission loss]
於傳輸損耗小之情形時,可抑制以高頻進行訊號傳輸時之訊號之衰減,因此以高頻進行訊號傳輸之電路可進行穩定之訊號的傳輸。因此,傳輸損耗之值小者適合用於以高頻進行訊號之傳輸之電路用途,故而較佳。將表面處理銅箔與市售之液晶聚合物樹脂(可樂麗股份有限公司製造之Vecstar CTZ-50μm)貼合後,以利用蝕刻使特性阻抗成為50Ω之方式形 成微帶線路,使用HP公司製造之網路分析儀HP8720C測定透射係數,求出於頻率20GHz之傳輸損耗,於此情形時,頻率20GHz之傳輸損耗較佳為未達5.0dB/10cm,更佳為未達4.1dB/10cm,進而更佳為未達3.7dB/10cm。In the case where the transmission loss is small, the attenuation of the signal at the time of signal transmission at a high frequency can be suppressed, so that the circuit transmitting at a high frequency can perform stable signal transmission. Therefore, it is preferable that the value of the transmission loss is small for a circuit use for transmitting a signal at a high frequency. After the surface-treated copper foil was bonded to a commercially available liquid crystal polymer resin (Vecstar CTZ-50 μm manufactured by Kuraray Co., Ltd.), the characteristic impedance was changed to 50 Ω by etching. In the microstrip line, the transmission coefficient is measured using a network analyzer HP8720C manufactured by HP, and the transmission loss at a frequency of 20 GHz is obtained. In this case, the transmission loss at a frequency of 20 GHz is preferably less than 5.0 dB/10 cm, more preferably. It is less than 4.1 dB/10 cm, and more preferably less than 3.7 dB/10 cm.
可將本發明之表面處理銅箔自表面處理面側貼合於樹脂基板而製造積層體。樹脂基板只要具有可應用於印刷配線板等之特性,則不受特別限制,例如,於剛性PWB用可使用紙基材酚系樹脂、紙基材環氧樹脂、合成纖維布基材環氧樹脂、玻璃布-紙複合基材環氧樹脂、玻璃布-玻璃不織布複合基材環氧樹脂及玻璃布基材環氧樹脂等,於FPC用可使用聚酯膜或聚醯亞胺膜、液晶聚合物(LCP)膜、Teflon(註冊商標)膜等。The surface-treated copper foil of the present invention can be bonded to the resin substrate from the surface of the surface-treated surface to produce a laminate. The resin substrate is not particularly limited as long as it has characteristics applicable to a printed wiring board or the like. For example, a paper substrate phenol resin, a paper substrate epoxy resin, or a synthetic fiber cloth substrate epoxy resin can be used for the rigid PWB. , glass cloth-paper composite substrate epoxy resin, glass cloth-glass non-woven composite substrate epoxy resin and glass cloth substrate epoxy resin, etc., can be used for FPC polyester film or polyimide film, liquid crystal polymerization (LCP) film, Teflon (registered trademark) film, and the like.
貼合之方法於剛性PWB用之情形時,係準備將樹脂含浸於玻璃布等基材中,而使硬化樹脂至半硬化狀態的預浸體。可藉由自與被覆層相反側之面將銅箔與預浸體重疊並進行加熱加壓而進行。於FPC之情形時,可藉由經由接著劑或不使用接著劑而於高溫高壓下將聚醯亞胺膜等基材積層接著於銅箔上,或者對聚醯亞胺前驅物進行塗佈、乾燥、硬化等而製造積層板。In the case of the rigid PWB, the method of bonding is to impregnate the resin into a substrate such as a glass cloth to cure the resin to a semi-hardened prepreg. The copper foil can be superposed on the surface opposite to the coating layer and superposed on the prepreg, and heated and pressurized. In the case of FPC, a substrate such as a polyimide film may be laminated on a copper foil under high temperature and high pressure via an adhesive or without an adhesive, or the polyimide precursor may be coated. A laminate is produced by drying, hardening, or the like.
聚醯亞胺基材樹脂之厚度不受特別限制,通常可列舉25μm或50μm。The thickness of the polyimide substrate resin is not particularly limited, and is usually 25 μm or 50 μm.
本發明之積層體可用於各種印刷配線板(PWB),並無特別限制,例如,就導體圖案之層數之觀點而言,可應用於單面PWB、兩面PWB、多層PWB(3層以上),就絕緣基板材料之種類之觀點而言,可應用於剛性PWB、可撓性PWB(FPC)、軟硬複合PWB。The laminate of the present invention can be used for various printed wiring boards (PWB), and is not particularly limited. For example, from the viewpoint of the number of layers of the conductor pattern, it can be applied to one-sided PWB, two-sided PWB, and multi-layer PWB (three or more layers). From the viewpoint of the type of the insulating substrate material, it can be applied to rigid PWB, flexible PWB (FPC), and soft and hard composite PWB.
(積層板及使用其之印刷配線板之定位方法)(Layering board and positioning method using the printed wiring board using the same)
對本發明之表面處理銅箔與樹脂基板之積層板之定位方法進行說明。 首先,準備表面處理銅箔與樹脂基板之積層板。作為本發明之表面處理銅箔與樹脂基板之積層板之具體例,可列舉:於由本體基板、附屬之電路基板及用以將該等電性連接之聚醯亞胺等樹脂基板之至少一個表面形成有銅配線之可撓性印刷基板構成的電子機器中,準確地定位可撓性印刷基板並壓接於該本體基板及附屬之電路基板之配線端部而製作的積層板。即,只要為此情形,則積層板會成為藉由將可撓性印刷基板與本體基板之配線端部壓接而使之貼合的積層體、或藉由將可撓性印刷基板與電路基板之配線端部壓接而使之貼合的積層板。積層板具有由該銅配線之一部分或其他材料形成之標記。標記之位置只要為可隔著構成該積層板之樹脂利用CCD攝影機等攝影手段進行攝影的位置,則並無特別限定。A method of positioning a laminate of the surface-treated copper foil and the resin substrate of the present invention will be described. First, a laminate of a surface-treated copper foil and a resin substrate is prepared. Specific examples of the laminated sheet of the surface-treated copper foil and the resin substrate of the present invention include at least one of a main substrate, an attached circuit substrate, and a resin substrate such as a polyimide which is electrically connected thereto. In an electronic device including a flexible printed circuit board having a copper wiring formed thereon, a flexible printed circuit board is accurately positioned and pressure-bonded to the wiring board of the main board and the attached circuit board. In other words, in this case, the laminated board is a laminated body which is bonded by crimping the flexible printed circuit board to the wiring end portion of the main substrate, or by using the flexible printed circuit board and the circuit board. The laminated board in which the wiring end portions are crimped and bonded to each other. The laminate has indicia formed from a portion of the copper wiring or other material. The position of the mark is not particularly limited as long as it is a position at which the resin constituting the laminate can be imaged by a photographing means such as a CCD camera.
於如此準備之積層板中,若隔著樹脂利用攝影手段對上述標記進行攝影,則可良好地檢測到上述標記之位置。並且,如此檢測到上述標記之位置,基於上述檢測到之標記之位置,可良好地進行表面處理銅箔與樹脂基板之積層板之定位。又,於使用印刷配線板作為積層板之情形時,亦可同樣地藉由此種定位方法,使攝影手段良好地檢測到標記之位置,而更準確地進行印刷配線板之定位。In the laminate thus prepared, when the mark is imaged by a photographing means via a resin, the position of the mark can be satisfactorily detected. Further, by detecting the position of the mark as described above, the position of the laminated sheet of the surface-treated copper foil and the resin substrate can be satisfactorily performed based on the position of the mark detected. Moreover, when a printed wiring board is used as a laminated board, the positioning means can be similarly detected by the positioning method, and the positioning of the printed wiring board can be performed more accurately.
因此,可認為於將一印刷配線板與另一印刷配線板連接時,連接不良減少,良率提高。再者,作為將一印刷配線板與另一印刷配線板連接之方法,可使用焊接或經由異向性導電膜(Anisotropic Conductive Film,ACF)之連接、經由異向性導電膏(Anisotropic Conductive Paste,ACP)之連接或經由具有導電性之接著劑之連接等公知之連接方法。再者,於本發明中,「印刷配線板」亦包括安裝有零件之印刷配線板、印刷電路板、及印 刷基板。又,可將2個以上本發明之印刷配線板連接,製造連接有2個以上印刷配線板之印刷配線板,又,可將至少1個本發明之印刷配線板、與另一個本發明之印刷配線板或並不相當於本發明之印刷配線板的印刷配線板連接,亦可使用此種印刷配線板製造電子機器。再者,於本發明中,「銅電路」亦包含銅配線。進而,亦可將本發明之印刷配線板與零件連接而製造印刷配線板。又,亦可藉由將至少1個本發明之印刷配線板、與另一個本發明之印刷配線板或並不相當於本發明之印刷配線板的印刷配線板連接,進而,將本發明之連接有2個以上印刷配線板的印刷配線板與零件連接,製造連接有2個以上印刷配線板的印刷配線板。此處,作為「零件」,可列舉:連接器或LCD(Liquid Cristal Display,液晶顯示裝置)、LCD中使用之玻璃基板等電子零件,包括IC(Integrated Circuit,積體電路)、LSI(Large scale integrated circuit,大型積體電路)、VLSI(Very Large scale integrated circuit,超大型積體電路)、ULSI(Ultra-Large Scale Integrated circuit,極大型積體電路)等半導體積體電路之電子零件(例如IC晶片、LSI晶片、VLSI晶片、ULSI晶片),用以屏蔽電子電路之零件及將外罩等固定於印刷配線板上必需之零件等。Therefore, when a printed wiring board is connected to another printed wiring board, it is considered that the connection failure is reduced and the yield is improved. Further, as a method of connecting one printed wiring board to another printed wiring board, soldering or connection via an anisotropic conductive film (ACF) or via an anisotropic conductive paste (Anisotropic Conductive Paste) may be used. A known connection method such as connection of ACP) or connection via a conductive adhesive. Furthermore, in the present invention, the "printed wiring board" also includes a printed wiring board on which components are mounted, a printed circuit board, and a printed circuit. Brush the substrate. Further, two or more printed wiring boards of the present invention can be connected to each other to manufacture a printed wiring board to which two or more printed wiring boards are connected, and at least one printed wiring board of the present invention can be printed with another printed image of the present invention. The wiring board or the printed wiring board which does not correspond to the printed wiring board of this invention is connected, and the electronic device can also be manufactured using such a printed wiring board. Furthermore, in the present invention, the "copper circuit" also includes copper wiring. Further, the printed wiring board of the present invention can be connected to a component to manufacture a printed wiring board. Further, the connection of the present invention can be further achieved by connecting at least one printed wiring board of the present invention to another printed wiring board of the present invention or a printed wiring board which does not correspond to the printed wiring board of the present invention. A printed wiring board having two or more printed wiring boards is connected to the components, and a printed wiring board having two or more printed wiring boards connected thereto is manufactured. Here, examples of the "parts" include electronic components such as a connector, an LCD (Liquid Cristal Display), and a glass substrate used in an LCD, and include an IC (Integrated Circuit) and an LSI (Large scale). Electronic components such as integrated circuits, large integrated circuits, VLSI (Very Large Scale Integrated Circuit), ULSI (Ultra-Large Scale Integrated circuit), and other semiconductor integrated circuits (such as ICs) A wafer, an LSI wafer, a VLSI wafer, a ULSI wafer, a component for shielding an electronic circuit, and a component necessary for fixing a cover or the like to a printed wiring board.
再者,本發明之實施之形態之定位方法亦可包括使積層板(包含銅箔與樹脂基板之積層板或印刷配線板)移動之步驟。移動步驟例如可藉由帶式輸送機或鏈條輸送機等輸送機而使之移動,可藉由具備支臂機構之移動裝置而使之移動,可藉由利用使用氣體使積層板浮動而移動的移動裝置或移動手段而使之移動,亦可藉由使大致圓筒形等之物旋轉使積層板移動之移動裝置或移動手段(包含輥或軸承等)、以油壓為動力源之移動 裝置或移動手段、以氣壓為動力源之移動裝置或移動手段、以馬達為動力源之移動裝置或移動手段、具有支架移動型線性導軌平台(Linear guide stage)、支架移動型空氣導向器平台(air guide stage)、堆疊型線性導軌平台、線性馬達驅動平台等平台的移動裝置或移動手段等而使之移動。又,亦可藉由公知之移動手段進行移動步驟。Furthermore, the positioning method of the embodiment of the present invention may include a step of moving a laminate (including a laminate of a copper foil and a resin substrate or a printed wiring board). The moving step can be moved by, for example, a conveyor such as a belt conveyor or a chain conveyor, and can be moved by a moving device having an arm mechanism, and can be moved by floating the laminated plate by using a gas. Moving the device or moving the device, or moving the device or moving means (including rollers or bearings) by moving the laminated plate by rotating a substantially cylindrical shape or the like, and moving the oil pressure as a power source Device or moving means, moving device or moving means using air pressure as power source, moving device or moving means using motor as power source, linear guide stage with bracket moving, air guiding platform for bracket moving ( The air guide stage), the stacked linear guide platform, the linear motor drive platform and the like move the mobile device or the moving means. Further, the moving step can be performed by a known moving means.
再者,本發明之實施形態之定位方法亦可用於表面安裝機或貼片機中。Furthermore, the positioning method of the embodiment of the present invention can also be used in a surface mounter or a mounter.
又,本發明定位之表面處理銅箔與樹脂基板之積層板亦可為具有樹脂板及設置於上述樹脂板之上之電路的印刷配線板。又,於此情形時,上述標記亦可為上述電路。Further, the laminated board of the surface-treated copper foil and the resin substrate positioned in the present invention may be a printed wiring board having a resin board and a circuit provided on the resin board. Moreover, in this case, the above-mentioned mark may be the above circuit.
於本發明中,「定位」包括「檢測標記或物之位置」。又,於本發明中,「位置對準」包括「於檢測到標記或物之位置後,基於上述檢測到之位置,使該標記或物移動至既定之位置」。In the present invention, "positioning" includes "detecting the position of a mark or object." Further, in the present invention, "positioning" includes "moving the marker or object to a predetermined position based on the detected position after detecting the position of the marker or the object".
再者,於印刷配線板中,代替印刷物之標記,可以印刷配線板上之電路為標記,隔著樹脂利用CCD攝影機對該電路進行攝影,而測定Sv之值。又,關於覆銅積層板,可於藉由蝕刻使銅成為線狀後,代替印刷物之標記,以該成為線狀之銅為標記,隔著樹脂利用CCD攝影機對該成為線狀之銅進行攝影,而測定Sv之值。Further, in the printed wiring board, instead of the mark of the printed matter, the circuit on the printed wiring board can be marked as a mark, and the circuit is photographed by a CCD camera via a resin, and the value of Sv is measured. Further, in the copper clad laminate, after the copper is formed into a line shape by etching, the linear copper is photographed by a CCD camera via a resin instead of the mark of the printed matter, using the linear copper as a mark. And determine the value of Sv.
又,本發明之覆銅積層板係一實施形態,其係具有絕緣樹脂基板與銅箔者,且藉由蝕刻使上述覆銅積層板之上述銅箔形成為線狀銅箔後,隔著上述絕緣樹脂基板利用CCD攝影機進行攝影時,對由上述攝影獲得之圖像,沿與觀察到之上述線狀銅箔延伸方向垂直之方向測定各觀察地點之亮度而製成觀察地點-亮度圖表,於該圖表中,將自上述線狀銅箔之 端部至無上述線狀銅箔之部分產生的亮度曲線之頂部平均值設為Bt,將底部平均值設為Bb,且求出頂部平均值Bt與底部平均值Bb之差△B(△B=Bt-Bb),於觀察地點-亮度圖表中,將表示亮度曲線與Bt之交點內最接近上述線狀表面處理銅箔之交點之位置的值設為t1,將自亮度曲線與Bt之交點至以Bt為基準之0.1△B深度範圍內表示亮度曲線與0.1△B之交點內最接近上述線狀表面處理銅箔之交點之位置的值設為t2,此時,(1)式定義之Sv為3.5以上。Further, in the embodiment of the copper-clad laminate according to the present invention, the insulating resin substrate and the copper foil are formed, and the copper foil of the copper-clad laminate is formed into a linear copper foil by etching, and then the above-mentioned copper foil is interposed therebetween. When the insulating resin substrate is photographed by a CCD camera, the brightness of each observation point is measured in the direction perpendicular to the direction in which the linear copper foil is observed in the image obtained by the above-described photographing, thereby forming an observation point-luminance chart. In the chart, it will be from the above-mentioned linear copper foil The top average value of the brightness curve generated from the end portion to the portion without the above-mentioned linear copper foil is set to Bt, the bottom average value is set to Bb, and the difference between the top average value Bt and the bottom average value Bb is obtained ΔB (ΔB) =Bt-Bb), in the observation point-brightness chart, the value indicating the position of the intersection of the brightness curve and the Bt closest to the above-mentioned linear surface-treated copper foil is t1, and the intersection of the self-luminance curve and Bt The value in the depth range of 0.1 ΔB based on Bt indicates that the position of the intersection of the luminance curve and the 0.1 ΔB closest to the intersection of the linear surface-treated copper foil is t2, and the formula (1) is defined. Sv is 3.5 or more.
進而,本發明之覆銅積層板係一實施形態,其係由絕緣樹脂基板、與自經表面處理之表面側和上述絕緣基板積層的表面處理銅箔構成者,且藉由蝕刻將上述覆銅積層板之上述表面處理銅箔製成線狀之表面處理銅箔後,隔著自經表面處理之表面側所積層之上述絕緣樹脂基板利用CCD攝影機進行攝影時,對由上述攝影獲得之圖像,沿與觀察到之上述線狀表面處理銅箔延伸方向垂直之方向測定各觀察地點之亮度而製成觀察地點-亮度圖表,於該圖表中,將自上述線狀表面處理銅箔之端部至無上述線狀表面處理銅箔之部分產生的亮度曲線之頂部平均值設為Bt,將底部平均值設為Bb,且求出頂部平均值Bt與底部平均值Bb之差△B(△B=Bt-Bb),於觀察地點-亮度圖表中,將表示亮度曲線與Bt之交點內最接近上述線狀表面處理銅箔之交點之位置的值設為t1,將自亮度曲線與Bt之交點至以Bt為基準之0.1△B深度範圍內表示亮度曲線與0.1△B之交點內最接近上述線狀表面處理銅箔之交點之位置的值設為t2,此時,(1)式定義之Sv為3.5以上。Further, the copper-clad laminate according to the present invention is an embodiment in which an insulating resin substrate and a surface-treated copper foil laminated on the surface side of the surface treatment and the insulating substrate are laminated, and the copper-clad coating is performed by etching. After the surface-treated copper foil of the laminated board is formed into a linear surface-treated copper foil, the image obtained by the above-mentioned photographing is photographed by the CCD camera through the insulating resin substrate laminated on the surface side of the surface treatment. The brightness of each observation point is measured in a direction perpendicular to the direction in which the linear surface-treated copper foil is observed to be observed, and an observation point-brightness chart is formed. In the figure, the end portion of the copper foil is treated from the above-mentioned linear surface. The top average value of the brightness curve generated by the portion to the above-mentioned linear surface-treated copper foil is set to Bt, the bottom average value is set to Bb, and the difference between the top average value Bt and the bottom average value Bb is obtained ΔB (ΔB) =Bt-Bb), in the observation point-brightness chart, the value indicating the position of the intersection of the brightness curve and the Bt closest to the above-mentioned linear surface-treated copper foil is set to t1, and the self-luminance curve and Bt are set. The value of the intersection point to the position of the 0.1 ΔB depth based on Bt indicates that the position of the intersection of the brightness curve and the 0.1 ΔB closest to the intersection of the linear surface-treated copper foil is t2, and the formula (1) is defined. The Sv is 3.5 or more.
若使用此種覆銅積層板製造印刷配線板,則可更準確地進行印刷配線 板之定位。因此,可認為於將一個印刷配線板與另一個印刷配線板連接時,連接不良減少,良率提高。When a printed wiring board is manufactured using such a copper-clad laminate, the printed wiring can be more accurately performed. The positioning of the board. Therefore, when one printed wiring board is connected to another printed wiring board, it is considered that the connection failure is reduced and the yield is improved.
[實施例][Examples]
<關於實驗例A1-1~A1-30、實驗例B1-1~B1-14><About Experimental Example A1-1~A1-30, Experimental Example B1-1~B1-14>
作為實驗例A1-1~A1-30及實驗例B1-1~B1-14,準備表2及表3中記載之各種銅箔,以表1中記載之條件對一個表面進行作為粗化處理之鍍敷處理。As Experimental Examples A1-1 to A1-30 and Experimental Examples B1-1 to B1-14, various copper foils described in Tables 2 and 3 were prepared, and one surface was subjected to roughening treatment under the conditions described in Table 1. Plating treatment.
於進行上述粗化鍍敷處理後,實驗例A1-1~A1-10、A1-12~A1-27、實驗例B1-3、B1-4、B1-6、B1-9~B1-14係進行下一用以形成耐熱層及防銹層之鍍敷處理。將耐熱層1之形成條件表示如下。After the above rough plating treatment, Experimental Examples A1-1~A1-10, A1-12~A1-27, Experimental Examples B1-3, B1-4, B1-6, B1-9~B1-14 The next plating treatment for forming the heat-resistant layer and the rust-preventing layer is performed. The formation conditions of the heat-resistant layer 1 are shown as follows.
液組成:鎳5~20g/L、鈷1~8g/LLiquid composition: nickel 5~20g/L, cobalt 1~8g/L
pH:2~3pH: 2~3
液溫:40~60℃Liquid temperature: 40~60°C
電流密度:5~20A/dm2 Current density: 5~20A/dm 2
庫侖量:10~20As/dm2 Coulomb amount: 10~20As/dm 2
再者,鍍敷時間設為0.5~2.0秒。Furthermore, the plating time is set to 0.5 to 2.0 seconds.
於施加有上述耐熱層1之銅箔上形成耐熱層2。將耐熱層2之形成條件表示如下。The heat-resistant layer 2 is formed on the copper foil to which the above heat-resistant layer 1 is applied. The formation conditions of the heat-resistant layer 2 are shown below.
液組成:鎳2~30g/L、鋅2~30g/LLiquid composition: nickel 2~30g/L, zinc 2~30g/L
pH:3~4pH: 3~4
液溫:30~50℃Liquid temperature: 30~50°C
電流密度:1~2A/dm2 Current density: 1~2A/dm 2
庫侖量:1~2As/dm2 Coulomb amount: 1~2As/dm 2
再者,實驗例B1-5、B1-7、B1-8係未進行粗化鍍敷處理,而於準備之銅箔直接形成耐熱層3。將耐熱層3之形成條件表示如下。Further, in Experimental Examples B1-5, B1-7, and B1-8, the roughening plating treatment was not performed, and the heat-resistant layer 3 was directly formed on the prepared copper foil. The formation conditions of the heat-resistant layer 3 are shown as follows.
液組成:鎳25g/L、鋅2g/LLiquid composition: nickel 25g / L, zinc 2g / L
pH:2.5pH: 2.5
液溫:40℃Liquid temperature: 40 ° C
電流密度:6A/dm2 Current density: 6A/dm 2
庫侖量:4.8As/dm2 Coulomb amount: 4.8As/dm 2
鍍敷時間:0.8秒Plating time: 0.8 seconds
又,實驗例B1-15係未進行粗化鍍敷處理,而於準備之銅箔,直接形成耐熱層4。將耐熱層4之形成條件表示如下。Further, in Experimental Example B1-15, the roughening plating treatment was not performed, and the heat-resistant layer 4 was directly formed on the prepared copper foil. The formation conditions of the heat-resistant layer 4 are shown as follows.
液組成:鎳0.3g/L、鋅2.5g/L、焦磷酸浴Liquid composition: nickel 0.3g / L, zinc 2.5g / L, pyrophosphate bath
液溫:40℃Liquid temperature: 40 ° C
電流密度:5A/dm2 Current density: 5A/dm 2
庫侖量:22.5As/dm2 Coulomb amount: 22.5As/dm 2
鍍敷時間:4.5秒Plating time: 4.5 seconds
於施加有上述耐熱層1及2或耐熱層3或耐熱層4之銅箔上,進而形成防銹層。將防銹層之形成條件表示如下。On the copper foil to which the heat-resistant layers 1 and 2 or the heat-resistant layer 3 or the heat-resistant layer 4 are applied, a rust-preventing layer is further formed. The formation conditions of the rustproof layer are shown below.
液組成:重鉻酸鉀1~10g/L、鋅0~5g/LLiquid composition: potassium dichromate 1~10g/L, zinc 0~5g/L
pH:3~4pH: 3~4
液溫:50~60℃Liquid temperature: 50~60°C
電流密度:0~2A/dm2 (用於浸漬鉻酸鹽處理)Current density: 0~2A/dm 2 (for impregnation chromate treatment)
庫侖量:0~2As/dm2 (用於浸漬鉻酸鹽處理)Coulomb amount: 0~2As/dm 2 (for impregnation chromate treatment)
於施加有上述耐熱層1、2及防銹層之銅箔上,進而形成耐候性層。將形成條件表示如下。A weather-resistant layer is further formed on the copper foil to which the heat-resistant layers 1 and 2 and the rust-preventing layer are applied. The formation conditions are expressed as follows.
利用作為具有胺基之矽烷偶合劑之N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷(實驗例A1-17、A1-24~A1-27)、N-2-(胺基乙基)-3-胺基丙基三乙氧基矽烷(實驗例A1-1~A1-16)、N-2-(胺基乙基)-3-胺基丙基甲基二甲氧基矽烷(實驗例A1-18、A1-28、A1-29、A1-30)、3-胺基丙基三甲氧基矽烷(實驗例A1-19)、3-胺基丙基三乙氧基矽烷(實驗例A1-20、A1-21)、3-三乙氧基矽烷基-N-(1,3-二甲基-亞丁基)丙基胺(實驗例22)、N-苯基-3-胺基丙基三甲氧基矽烷(實驗例A1-23)進行塗佈、乾燥,而形成耐候性層。亦可組合2種以上該等矽烷偶合劑而使用。同樣,實驗例B1-1~B1-14係利用N-2-(胺基乙基)-3-胺基丙基三甲氧基矽烷進行塗佈、乾燥,而形成耐候性層。Using N-2-(aminoethyl)-3-aminopropyltrimethoxydecane as an amine-based decane coupling agent (Experimental Examples A1-17, A1-24~A1-27), N-2 -(Aminoethyl)-3-aminopropyltriethoxydecane (Experimental Example A1-1~A1-16), N-2-(Aminoethyl)-3-aminopropylmethyl Dimethoxydecane (Experimental Examples A1-18, A1-28, A1-29, A1-30), 3-aminopropyltrimethoxydecane (Experimental Example A1-19), 3-aminopropyltri Ethoxy decane (Experimental Examples A1-20, A1-21), 3-triethoxydecyl-N-(1,3-dimethyl-butylene)propylamine (Experimental Example 22), N- Phenyl-3-aminopropyltrimethoxydecane (Experimental Example A1-23) was applied and dried to form a weather resistant layer. Two or more of these decane coupling agents may be used in combination. Similarly, Experimental Examples B1-1 to B1-14 were coated and dried with N-2-(aminoethyl)-3-aminopropyltrimethoxydecane to form a weather resistant layer.
再者,壓延銅箔係以如下方式製造。製造表2及表3所示之組成之銅錠,進行熱軋後,於300~800℃之連續退火線反覆進行退火與冷軋,而獲得1~2mm厚之壓延板。於300~800℃之連續退火線使該壓延板退火並再結晶,最終進行冷軋直至表2之厚度,而獲得銅箔。表2及表3之「種類」欄之「精銅」表示以JIS H3100 C1100為標準之精銅,「無氧銅」表示以JIS H3100 C1020為標準之無氧銅。又,「精銅+Ag:100ppm」係表示於精銅中添加100質量ppm之Ag。Further, the rolled copper foil was produced in the following manner. The copper ingots having the compositions shown in Tables 2 and 3 were subjected to hot rolling, and then subjected to annealing and cold rolling in a continuous annealing line at 300 to 800 ° C to obtain a rolled sheet having a thickness of 1 to 2 mm. The rolled sheet was annealed at 300 to 800 ° C for annealing and recrystallization, and finally cold rolled until the thickness of Table 2 to obtain a copper foil. The "fine copper" in the "Category" column of Tables 2 and 3 indicates the refined copper based on JIS H3100 C1100, and the "oxygen-free copper" indicates the oxygen-free copper based on JIS H3100 C1020. Further, "fine copper + Ag: 100 ppm" means that 100 mass ppm of Ag is added to the refined copper.
電解銅箔係使用JX日鑛日石金屬公司製造之電解銅箔HIP箔。於進行電解研磨或化學研磨之情形時,記載電解研磨或化學研磨後之板厚。The electrolytic copper foil is an electrolytic copper foil HIP foil manufactured by JX Nippon Mining & Metal Co., Ltd. In the case of electrolytic polishing or chemical polishing, the thickness of the plate after electrolytic polishing or chemical polishing is described.
再者,表2及表3中記載有表面處理前之銅箔製作步驟之要點。「高光澤壓延」係表示以記載之油膜當量之值進行最終之冷軋(最終之再結晶退火後之冷軋)。「通常壓延」係表示以記載之油膜當量之值進行最終之冷軋(最終之再結晶退火後之冷軋)。「化學研磨」、「電解研磨」係表示於以下條件下進行。In addition, Table 2 and Table 3 describe the point of the copper foil production process before surface treatment. "High gloss rolling" means final cold rolling (cold rolling after final recrystallization annealing) at the value of the oil film equivalent described. "Normal calendering" means that the final cold rolling is performed at the value of the oil film equivalent described (the cold rolling after the final recrystallization annealing). "Chemical polishing" and "electrolytic polishing" are carried out under the following conditions.
「化學研磨」中,H2 SO4 為1~3質量%,H2 O2 為0.05~0.15質量%,使用剩餘部分之水之蝕刻液,將研磨時間設為1小時。In the "chemical polishing", H 2 SO 4 is 1 to 3% by mass, and H 2 O 2 is 0.05 to 0.15% by mass. The polishing time of the remaining portion of water is used to set the polishing time to 1 hour.
「電解研磨」係於磷酸67%+硫酸10%+水23%之條件下,以電壓10V/cm2 、表2中記載之時間(若進行10秒之電解研磨,則研磨量成為1~2μm)進行。"Electrolytic polishing" is carried out under the conditions of a phosphoric acid 67% + sulfuric acid 10% + water 23% at a voltage of 10 V/cm 2 and the time shown in Table 2 (if electrolytic polishing is performed for 10 seconds, the polishing amount becomes 1 to 2 μm. )get on.
<關於實驗例A2-1~A2-7、B2-1~B2-2、A3-1~A3-9、B3-1~B3-5、A4-1~A4-8、B4-1~B4-5><About Experimental Example A2-1~A2-7, B2-1~B2-2, A3-1~A3-9, B3-1~B3-5, A4-1~A4-8, B4-1~B4- 5>
實驗例係準備表6、8、10中記載之各銅箔,於表7、9、11中記載之條件下,對一個表面進行作為表面處理之鍍敷處理。又,亦準備未進行粗化處理者。表之「表面處理」之「粗化處理」欄之「無」表示表面處理並非粗化處理,「有」表示表面處理為粗化處理。In the experimental examples, each of the copper foils described in Tables 6, 8, and 10 was prepared, and one surface was subjected to a plating treatment as a surface treatment under the conditions described in Tables 7, 9, and 11. Also, those who have not been roughened are also prepared. "None" in the "Roughening" column of the "Surface Treatment" of the table indicates that the surface treatment is not roughening, and "Yes" indicates that the surface treatment is roughening.
再者,壓延銅箔(表之「種類」欄之「精銅」表示壓延銅箔)係以如下方式製造。製造既定之銅錠,進行熱軋後,於300~800℃之連續退火線反覆進行退火與冷軋,而獲得1~2mm厚之壓延板。於300~800℃之連續退火線使該壓延板退火並再結晶,最終進行冷軋直至表1之厚度,而獲得銅箔。表之「精銅」係表示以JIS H3100 C1100為標準之精銅。Further, the rolled copper foil ("perfected copper" in the "Type" column of the table indicates rolled copper foil) was produced as follows. After the predetermined copper ingot is produced, after hot rolling, the continuous annealing line at 300 to 800 ° C is repeatedly subjected to annealing and cold rolling to obtain a rolled sheet of 1 to 2 mm thick. The rolled sheet was annealed at 300 to 800 ° C for annealing and recrystallization, and finally cold rolled until the thickness of Table 1 to obtain a copper foil. The "fine copper" in the table indicates fine copper based on JIS H3100 C1100.
再者,表中記載有表面處理前之銅箔製作步驟之要點。「高光澤壓延」 係表示以記載之油膜當量之值進行最終之冷軋(最終之再結晶退火後之冷軋)。再者,實驗例A3-1、A3-2、A4-1、A4-2亦製造銅箔之厚度為6μm、12μm、35μm之銅箔,並進行評價。其結果,成為與銅箔之厚度為18μm之情形相同之結果。Further, the table describes the main points of the copper foil production step before the surface treatment. "High gloss calendering" It means that the final cold rolling (cold rolling after the final recrystallization annealing) is carried out at the value of the oil film equivalent described. Further, in Experimental Examples A3-1, A3-2, A4-1, and A4-2, copper foils having copper foil thicknesses of 6 μm, 12 μm, and 35 μm were also produced and evaluated. As a result, it was the same as the case where the thickness of the copper foil was 18 μm.
針對如上述般製作之實施例及比較例之各樣品以下述方式進行各種評價。Each of the samples of the examples and the comparative examples produced as described above was subjected to various evaluations in the following manner.
.表面粗糙度(Rz)之測定:. Determination of surface roughness (Rz):
各實施例、比較例之表面處理後之銅箔係使用小阪研究所股份有限公司製造之接觸粗糙度計Surfcorder SE-3C,依據JIS B0601-1994,對經表面處理之面測定十點平均粗糙度。於測定基準長度0.8mm、評價長度4mm、截斷值0.25mm、輸送速度0.1mm/秒之條件下,於壓延方向或與電解銅箔之製造裝置中之電解銅箔之行進方向垂直之方向(TD)上變更測定位置測定10次,求出10次測定之值。The surface-treated copper foil of each of the examples and the comparative examples was measured using a contact roughness meter Surfcorder SE-3C manufactured by Kosaka Research Co., Ltd., and a surface roughness of 10 points was measured according to JIS B0601-1994. . In the direction of the rolling direction or the direction perpendicular to the traveling direction of the electrolytic copper foil in the manufacturing apparatus of the electrolytic copper foil under the conditions of the measurement reference length of 0.8 mm, the evaluation length of 4 mm, the cutoff value of 0.25 mm, and the conveying speed of 0.1 mm/sec (TD) The measurement position was changed 10 times, and the value of 10 measurements was obtained.
再者,表面處理前之銅箔亦以相同之方式求出表面粗糙度(Rz)。Further, the surface roughness (Rz) of the copper foil before the surface treatment was also determined in the same manner.
再者,於對銅箔表面進行過粗化處理後或者未進行粗化處理而為了設置耐熱層、防銹層、耐候性層等而進行表面處理的情形時,對進行過該耐熱層、防銹層、耐候性層等之表面處理後的表面處理銅箔之表面進行上述測定。於表面處理銅箔為附載體銅箔之極薄銅層之情形時,對極薄銅層之粗化處理表面進行上述測定。In addition, when the surface of the copper foil is subjected to a roughening treatment or a roughening treatment, and a surface treatment is performed in order to provide a heat-resistant layer, a rust-preventing layer, a weather-resistant layer, or the like, the heat-resistant layer is prevented. The surface of the surface-treated copper foil after surface treatment such as a rust layer or a weather-resistant layer was subjected to the above measurement. In the case where the surface-treated copper foil is an extremely thin copper layer with a carrier copper foil, the above-described measurement is performed on the roughened surface of the ultra-thin copper layer.
.表面均方根高度Rq之測定:. Determination of surface root mean square height Rq:
各實施例、比較例之表面處理後之銅箔之表面處理面係利用奧林巴斯公司製造之雷射顯微鏡OLS4000,測定銅箔表面均方根高度Rq。於銅箔表 面之倍率1000倍觀察時,於評價長度647μm、截斷值為零之條件下,對於壓延銅箔,利用與壓延方向垂直之方向(TD)之測定而求出值,或者對於電解銅箔,利用與電解銅箔之製造裝置中之電解銅箔之行進方向垂直之方向(TD)之測定而求出值。再者,利用雷射顯微鏡獲得之表面均方根高度Rq之測定環境溫度設為23~25℃。The surface-treated surface of the copper foil after the surface treatment of each of the examples and the comparative examples was measured by the laser microscope OLS4000 manufactured by Olympus Corporation, and the root mean square height Rq of the copper foil was measured. Copper foil table When the magnification of the surface is 1000 times, the value of the rolled copper foil is measured by the measurement in the direction perpendicular to the rolling direction (TD) or the electrolytic copper foil is used under the condition that the evaluation length is 647 μm and the cutoff value is zero. The value was determined by measurement in the direction (TD) perpendicular to the traveling direction of the electrolytic copper foil in the apparatus for manufacturing an electrolytic copper foil. Further, the measurement ambient temperature of the surface root mean square height Rq obtained by a laser microscope was set to 23 to 25 °C.
.表面之偏斜度Rsk之測定:. Determination of the skewness of the surface Rsk:
各實施例、比較例之表面處理後之銅箔之表面處理面係利用奧林巴斯公司製造之雷射顯微鏡OLS4000,測定銅箔之表面處理面之偏斜度Rsk。於銅箔表面之倍率1000倍觀察時,於評價長度647μm、截斷值為零之條件下,對於壓延銅箔,利用與壓延方向垂直之方向(TD)之測定而求出值,或者對於電解銅箔,利用與電解銅箔之製造裝置中之電解銅箔之行進方向垂直之方向(TD)之測定而求出值。再者,利用雷射顯微鏡獲得之表面之偏斜度Rsk之測定環境溫度設為23~25℃。The surface-treated surface of the copper foil after the surface treatment of each of the examples and the comparative examples was measured by the laser microscope OLS4000 manufactured by Olympus Corporation, and the skewness Rsk of the surface-treated surface of the copper foil was measured. When the magnification of the surface of the copper foil is 1000 times, the value of the rolled copper foil is determined by the measurement in the direction perpendicular to the rolling direction (TD), or for the electrolytic copper, under the condition that the evaluation length is 647 μm and the cutoff value is zero. The foil was obtained by measuring the direction (TD) perpendicular to the traveling direction of the electrolytic copper foil in the apparatus for producing an electrolytic copper foil. Further, the measurement ambient temperature of the surface skewness Rsk obtained by the laser microscope was set to 23 to 25 °C.
.銅箔表面之表面積G與凸部體積E的比E/G之測定:. Determination of the ratio of the surface area G of the copper foil surface to the volume E of the convex portion E/G:
各實施例、比較例之表面處理後之銅箔之表面處理面係利用奧林巴斯公司製造之雷射顯微鏡OLS4000,測定俯視時所得之表面積G與凸部體積E,算出比E/G。根據評價面積647μm×646μm、截斷值為零之條件求出值。再者,利用雷射顯微鏡進行俯視時所得之表面積G與凸部體積E之測定環境溫度設為23~25℃。The surface-treated surface of the copper foil after the surface treatment of each of the examples and the comparative examples was measured by the laser microscope OLS4000 manufactured by Olympus Corporation, and the surface area G and the convex portion volume E obtained in plan view were measured to calculate the ratio E/G. The value was obtained on the condition that the evaluation area was 647 μm × 646 μm and the cutoff value was zero. Further, the measurement ambient temperature of the surface area G and the convex portion volume E obtained by the use of a laser microscope in a plan view was 23 to 25 °C.
.面積比(D/C):. Area ratio (D/C):
關於各實施例、比較例之表面處理後之銅箔之表面處理面,銅箔表面之表面積係使用利用雷射顯微鏡之測定法。各實施例、比較例之表面處理 後之銅箔係使用奧林巴斯公司製造之雷射顯微鏡OLS4000,對處理表面之倍率20倍中之相當於647μm×646μm面積(俯視時所得之表面積)C(實際資料為417,953μm2 )之三維表面積D進行測定,藉由三維表面積D÷二維表面積C=面積比(D/C)之方法進行計算。再者,利用雷射顯微鏡獲得之三維表面積B之測定環境溫度設為23~25℃。With respect to the surface-treated surface of the copper foil after the surface treatment of each of the examples and the comparative examples, the surface area of the surface of the copper foil was measured by a laser microscope. The copper foil after the surface treatment of each of the examples and the comparative examples was a laser microscope OLS4000 manufactured by Olympus Co., Ltd., and the area of the treated surface was 20 times the equivalent of 647 μm × 646 μm (surface area obtained in plan view) C. The three-dimensional surface area D of (actual data: 417,953 μm 2 ) was measured and calculated by the method of three-dimensional surface area D ÷ two-dimensional surface area C = area ratio (D/C). Further, the measurement ambient temperature of the three-dimensional surface area B obtained by a laser microscope was set to 23 to 25 °C.
.粒子之面積比(A/B):. Area ratio of particles (A/B):
粗化粒子之表面積係使用利用雷射顯微鏡之測定法。使用其恩斯股份有限公司製造之雷射顯微鏡VK8500,測定粗化處理面之倍率2000倍中之相當於100×100μm面積B(實際資料為9982.52μm2 )之三維表面積A,藉由三維表面積A÷二維表面積B=面積比(A/B)之方法進行設定。再者,未進行粗化處理之銅箔表面亦藉由該測定算出三維表面積A÷二維表面積B=面積比(A/B)。The surface area of the roughened particles is measured using a laser microscope. Using a laser microscope VK8500 manufactured by Ens Co., Ltd., the three-dimensional surface area A corresponding to an area B of 100 × 100 μm (actual data of 9982.52 μm 2 ) in a magnification of 2000 times of the roughened surface was measured by the three-dimensional surface area A. The method of setting the two-dimensional surface area B = area ratio (A/B) is set. Further, the surface of the copper foil which was not subjected to the roughening treatment was also subjected to the measurement to calculate a three-dimensional surface area A ÷ two-dimensional surface area B = area ratio (A / B).
又,於對銅箔表面進行過粗化處理後或者未進行粗化處理而為了設置耐熱層、防銹層、耐候性層等而進行表面處理的情形時,對進行過該耐熱層、防銹層、耐候性層等之表面處理後的表面處理銅箔之表面進行上述測定。In addition, when the surface of the copper foil is roughened or not subjected to roughening treatment, and the surface treatment is performed in order to provide a heat-resistant layer, a rustproof layer, a weather resistant layer, or the like, the heat-resistant layer is subjected to rust prevention. The surface of the surface-treated copper foil after surface treatment such as a layer or a weather-resistant layer was subjected to the above measurement.
.光澤度:. Gloss:
使用依據JIS Z8741之日本電色工業股份有限公司製造之光澤度計Handy Gloss Meter PG-1,於壓延方向(MD、電解銅箔之情形時為通箔方向)及與壓延方向成直角之方向(TD、電解銅箔之情形時為與通箔方向成直角之方向)之各入射角60度,對表面處理面(表面處理為粗化處理之情形時為粗化面)進行測定。再者,於對銅箔表面進行過粗化處理後或者未進行 粗化處理而為了設置耐熱層、防銹層、耐候性層等而進行表面處理的情形時,對進行過該耐熱層、防銹層、耐候性層等之表面處理後的表面處理銅箔之表面進行上述測定。再者,表面處理前之銅箔亦以相同之方式求出光澤度。A gloss meter Handy Gloss Meter PG-1 manufactured by Nippon Denshoku Industries Co., Ltd. according to JIS Z8741 is used in the rolling direction (MD, the direction of the foil in the case of electrolytic copper foil) and a direction perpendicular to the rolling direction ( In the case of TD or electrolytic copper foil, the incident angle is 60 degrees in the direction perpendicular to the direction of the foil, and the surface-treated surface (the roughened surface in the case where the surface treatment is roughened) is measured. Furthermore, after roughening the surface of the copper foil or not When the surface treatment is performed in order to provide a heat-resistant layer, a rust-proof layer, a weather-resistant layer, or the like in the roughening treatment, the surface-treated copper foil subjected to surface treatment such as the heat-resistant layer, the rust-preventive layer, and the weather-resistant layer is used. The surface was subjected to the above measurement. Further, the copper foil before the surface treatment was also subjected to the gloss in the same manner.
.亮度曲線之斜率. Slope of the brightness curve
將表面處理銅箔自該表面處理銅箔之粗化處理表面側貼合於聚醯亞胺膜(實驗例A1-1~A1-30、實驗例B1-1~B1-14係使用鐘化製造之厚度25μm或50μm或者東麗杜邦製造之厚度50μm中之任一聚醯亞胺膜,實驗例A2-1~A2-7、B2-1~B2-2、A3-1~A3-9、B3-1~B3-5、A4-1~A4-8、B4-1~B4-5係使用鐘化製造之厚度50μm、雙層覆銅積層板用PIXEO之聚醯亞胺膜)之兩面,利用蝕刻(三氯化鐵水溶液)去除銅箔而製作樣品膜。再者,於對銅箔表面進行過粗化處理後或者未進行粗化處理而為了設置耐熱層、防銹層、耐候性層等而進行表面處理的情形時,將進行過該耐熱層、防銹層、耐候性層等之表面處理後的表面處理銅箔自進行過該表面處理面側貼合於聚醯亞胺膜之兩面,利用蝕刻(三氯化鐵水溶液)去除表面處理銅箔而製作樣品膜。繼而,將印刷有線狀之黑色標記之印刷物鋪設於樣品膜之下,隔著樣品膜利用CCD攝影機對印刷物進行攝影,對由攝影獲得之圖像,沿與觀察到之線狀標記延伸方向垂直之方向測定各觀察地點之亮度而製成觀察地點-亮度圖表,於該圖表中,測定自標記之端部至未描繪標記之部分產生之亮度曲線之斜率(角度)。將表示此時使用之攝影裝置之構成及亮度曲線之斜率之測定方法的模式圖示於圖3。The surface-treated copper foil was bonded to the polyimide film from the roughened surface side of the surface-treated copper foil (Experimental Examples A1-1 to A1-30, and Experimental Examples B1-1 to B1-14 were manufactured by Zhonghuan) Any of the polyimine films having a thickness of 25 μm or 50 μm or a thickness of 50 μm manufactured by Toray DuPont, Experimental Examples A2-1 to A2-7, B2-1 to B2-2, A3-1 to A3-9, and B3 -1~B3-5, A4-1~A4-8, B4-1~B4-5 are used on both sides of the PIXEO polyimine film with a thickness of 50 μm manufactured by Zhonghua and a double-layer copper-clad laminate. The copper foil was removed by etching (aqueous solution of ferric chloride) to prepare a sample film. In addition, when the surface of the copper foil is subjected to roughening treatment or is not subjected to roughening treatment, and the surface treatment is performed in order to provide a heat-resistant layer, a rustproof layer, a weather resistant layer, or the like, the heat-resistant layer is prevented. The surface-treated copper foil after surface treatment such as a rust layer or a weather-resistant layer is bonded to both sides of the polyimide film from the surface of the surface-treated surface, and the surface-treated copper foil is removed by etching (aqueous solution of ferric chloride). Make a sample film. Then, the print with the printed black mark is laid under the sample film, and the printed matter is photographed by the CCD camera through the sample film, and the image obtained by the photograph is perpendicular to the direction in which the observed linear mark is extended. The direction was measured for the brightness of each observation point to prepare an observation point-luminance chart, in which the slope (angle) of the luminance curve generated from the end portion of the mark to the portion where the mark was not drawn was measured. A schematic diagram showing a method of measuring the configuration of the imaging device used at this time and the slope of the luminance curve is shown in FIG.
又,△B及t1、t2、Sv係如圖2所示般利用下述攝影裝置進行測定。再 者,橫軸之1像素相當於10μm長度。Further, ΔB and t1, t2, and Sv were measured by the following imaging apparatus as shown in Fig. 2 . again One pixel on the horizontal axis corresponds to a length of 10 μm.
攝影裝置具備CCD攝影機、設置下方置有附有標記之紙之聚醯亞胺基板的平台(白色)、對聚醯亞胺基板之攝影部照射光之照明用電源、將下方置有附有攝影對象之標記之紙之評價用聚醯亞胺基板搬送至平台上的搬送機(未圖示)。將該攝影裝置之主要規格表示如下:The photographing apparatus includes a CCD camera, a platform (white) on which a polyimine substrate having a marked paper is placed, a light source for illuminating the photographing unit of the polyimide substrate, and a photographing unit attached to the lower side. The evaluation of the target paper was carried out by a conveyor on a platform (not shown) using a polyimide substrate. The main specifications of the photographic device are expressed as follows:
.攝影裝置:尼利可股份有限公司製造之片材檢測裝置Mujiken. Photographic device: sheet inspection device manufactured by Nireco Co., Ltd. Mujiken
.CCD攝影機:8192像素(160MHz)、1024灰階數位(10比特(bit)). CCD camera: 8192 pixels (160MHz), 1024 grayscale digits (10 bits)
.照明用電源:高頻照明電源(電源單元×2). Lighting power supply: high-frequency lighting power supply (power supply unit × 2)
.照明:螢光燈(30W). Lighting: Fluorescent (30W)
再者,關於圖3所示之亮度,0表示「黑」,亮度255表示「白」,將「黑」與「白」之間之灰色程度(白黑之濃淡、灰度)分割為256個灰階而顯示。Furthermore, regarding the brightness shown in FIG. 3, 0 means "black", brightness 255 means "white", and the degree of gray between black and white (white and black, grayscale) is divided into 256 Displayed in grayscale.
.識別性(樹脂透明性):. Identification (resin transparency):
將表面處理銅箔之經表面處理側之表面貼合於聚醯亞胺膜(實驗例A1-1~A1-30、實驗例B1-1~B1-14係使用鐘化製造之厚度25μm或50μm、或者東麗杜邦製造之厚度50μm中之任一聚醯亞胺膜,實驗例A2-1~A2-7、B2-1~B2-2、A3-1~A3-9、B3-1~B3-5、A4-1~A4-8、B4-1~B4-5係使用鐘化製造之厚度50μm、雙層覆銅積層板用PIXEO之聚醯亞胺膜)之兩面,利用蝕刻(三氯化鐵水溶液)去除銅箔,而製成樣品膜。再者,於對銅箔表面進行過粗化處理後或者未進行粗化處理而為了設置耐熱層、防銹層、耐候性層等而進行表面處理的情形時,將進行過該耐熱層、防銹層、耐候性層等之表面處理後的表面處理銅箔自進行過該表面處理面側貼合於聚醯亞胺膜之兩面,利用蝕刻(三氯化鐵水溶 液)去除表面處理銅箔,而製成樣品膜。於獲得之樹脂層之一面貼附印刷物(直徑6cm之黑色圓),自相反面隔著樹脂層對印刷物之識別性進行判定。將印刷物之黑色圓之輪廓於圓周之90%以上之長度上清晰者評價為「◎」,將黑色圓之輪廓於圓周之80%以上且未達90%之長度上清晰者評價為「○」(以上為合格),將黑色圓之輪廓於圓周之0以上且未達80%之長度上清晰者及輪廓不清者評價為「×」(不合格)。The surface of the surface-treated copper foil on the surface of the surface-treated side was bonded to a polyimide film (Experimental Examples A1-1 to A1-30, and Experimental Examples B1-1 to B1-14 were made of a thickness of 25 μm or 50 μm. Or any of the polyimine films of thickness 50 μm manufactured by Toray DuPont, Experimental Examples A2-1~A2-7, B2-1~B2-2, A3-1~A3-9, B3-1~B3 -5, A4-1~A4-8, B4-1~B4-5 are etched (trichloro) using both sides of a 50 μm thick layer made of Zhonghua and a PIXEO polyimine film for a double-layer copper-clad laminate. The molten iron solution) removes the copper foil to form a sample film. In addition, when the surface of the copper foil is subjected to roughening treatment or is not subjected to roughening treatment, and the surface treatment is performed in order to provide a heat-resistant layer, a rustproof layer, a weather resistant layer, or the like, the heat-resistant layer is prevented. The surface-treated copper foil after surface treatment such as a rust layer or a weather-resistant layer is bonded to both sides of the polyimide film from the surface of the surface-treated surface, and is etched (water-soluble by ferric chloride) Liquid) The surface treated copper foil is removed to form a sample film. A printed matter (black circle having a diameter of 6 cm) was attached to one surface of the obtained resin layer, and the visibility of the printed matter was judged from the opposite surface via the resin layer. When the length of the black circle of the printed matter is more than 90% of the circumference, it is judged as "◎", and the outline of the black circle is 80% or more of the circumference and the length of less than 90% is clearly defined as "○". (The above is acceptable), and the black circle contour is evaluated as "X" (failed) in the case where the length of the circle is 0 or more and the length is less than 80%.
.剝離強度(接著強度):. Peel strength (follow strength):
依據IPC-TM-650,利用拉伸試驗機自動立體測圖儀100測定常態剝離強度,將上述常態剝離強度為0.7N/mm以上者作為可用於積層基板用途者。再者,本剝離強度之測定中,實驗例A1-1~A1-30、實驗例B1-1~B1-14係使用鐘化製造之厚度25μm或50μm、或者東麗杜邦製造之厚度50μm中之任一聚醯亞胺膜,實驗例A2-1~A2-7、B2-1~B2-2、A3-1~A3-9、B3-1~B3-5、A4-1~A4-8、B4-1~B4-5係使用鐘化製造之厚度50μm、雙層覆銅積層板用PIXEO之聚醯亞胺膜,且使用將該聚醯亞胺膜與本發明之實施例及比較例之表面處理銅箔之表面處理面貼合而成之樣品。又,於進行測定時,藉由利用兩面膠帶將聚醯亞胺膜貼附於硬質基材(不鏽鋼板或合成樹脂之板(於剝離強度測定中未變形即可)),或者藉由利用瞬間接著劑進行貼附而固定。又,表中之剝離強度之值之單位為N/mm。According to IPC-TM-650, the normal peeling strength is measured by the tensile tester autostereograph 100, and the normal peel strength of 0.7 N/mm or more is used as a laminate substrate. In addition, in the measurement of the peeling strength, Experimental Examples A1-1 to A1-30 and Experimental Examples B1-1 to B1-14 were used in the thickness of 25 μm or 50 μm manufactured by Zhonghua, or 50 μm in thickness manufactured by Toray Dupont. Any of the polyimide membranes, Experimental Examples A2-1 to A2-7, B2-1 to B2-2, A3-1 to A3-9, B3-1 to B3-5, A4-1 to A4-8, B4-1~B4-5 is a PIXEO polyimine film made of a 50 μm thick, double-layer copper-clad laminate produced by Zhonghua, and the polyimide film and the examples and comparative examples of the present invention are used. A surface-treated copper foil surface-treated surface is bonded to a sample. Further, in the measurement, the polyimide film is attached to a hard substrate (a stainless steel plate or a synthetic resin plate (not deformed in the peel strength measurement) by using a double-sided tape, or by using an instant The adhesive is attached and fixed. Further, the unit of the value of the peel strength in the table is N/mm.
.焊料耐熱評價:. Solder heat resistance evaluation:
將表面處理銅箔之經表面處理側之表面貼合於聚醯亞胺膜(實驗例A1-1~A1-30、實驗例B1-1~B1-14係使用鐘化製造之厚度25μm或 50μm、或者東麗杜邦製造之厚度50μm中之任一聚醯亞胺膜,實驗例A2-1~A2-7、B2-1~B2-2、A3-1~A3-9、B3-1~B3-5、A4-1~A4-8、B4-1~B4-5係使用鐘化製造之厚度50μm、雙層覆銅積層板用PIXEO之聚醯亞胺膜)之兩面。獲得之兩面積層板係依據JIS C6471製成附體試片。將製成之附體試片於85℃、85%RH之高溫高濕下暴露48小時後,浮於300℃之焊料槽中,對焊料耐熱特性進行評價。焊料耐熱試驗後,於銅箔粗化處理面與聚醯亞胺樹脂接著面之界面中,將附體試片中之銅箔面積之5%以上之面積因膨脹而使界面變色者評價為×(不合格),將膨脹變色面積未達5%者評價為○,將完全未產生膨脹變色者評價為◎。再者,於對銅箔表面進行過粗化處理後或者未進行粗化處理而為了設置耐熱層、防銹層、耐候性層等而進行表面處理的情形時,對進行過該耐熱層、防銹層、耐候性層等之表面處理後的表面處理銅箔之表面進行上述測定。The surface of the surface-treated copper foil on the surface of the surface-treated side was bonded to the polyimide film (Experimental Examples A1-1 to A1-30, and Experimental Examples B1-1 to B1-14 were made by using a thickness of 25 μm or 50 μm, or any of the thicknesses of 50 μm made by Toray Dupont, experimental examples A2-1~A2-7, B2-1~B2-2, A3-1~A3-9, B3-1~ B3-5, A4-1~A4-8, and B4-1~B4-5 are both sides of a 50 μm thick manufactured by Zhonghua and a PIXEO polyimine film for a double-layer copper-clad laminate. The obtained two-area laminate was made into an attached test piece in accordance with JIS C6471. The prepared test piece was exposed to high temperature and high humidity of 85 ° C and 85% RH for 48 hours, and then floated in a solder bath of 300 ° C to evaluate the heat resistance of the solder. After the solder heat resistance test, in the interface between the copper foil roughening surface and the polyimide back surface of the polyimide film, the area of 5% or more of the area of the copper foil in the attached test piece was expanded to cause the interface discoloration to be evaluated as × (Failed), the case where the expansion discoloration area was less than 5% was evaluated as ○, and the case where the expansion discoloration did not occur at all was evaluated as ◎. In addition, when the surface of the copper foil is subjected to a roughening treatment or a roughening treatment, and a surface treatment is performed in order to provide a heat-resistant layer, a rust-preventing layer, a weather-resistant layer, or the like, the heat-resistant layer is prevented. The surface of the surface-treated copper foil after surface treatment such as a rust layer or a weather-resistant layer was subjected to the above measurement.
.良率. Yield
將表面處理銅箔之經表面處理側之表面貼合於聚醯亞胺膜(實驗例A1-1~A1-30、實驗例B1-1~B1-14係使用鐘化製造之厚度25μm或50μm、或者東麗杜邦製造之厚度50μm中之任一聚醯亞胺膜,實驗例A2-1~A2-7、B2-1~B2-2、A3-1~A3-9、B3-1~B3-5、A4-1~A4-8、B4-1~B4-5係使用鐘化製造之厚度50μm、雙層覆銅積層板用PIXEO之聚醯亞胺膜)之兩面,對銅箔進行蝕刻(三氯化鐵水溶液),製成L/S為30μm/30μm之電路寬度之FPC。其後,嘗試隔著聚醯亞胺利用CCD攝影機檢測20μm×20μm見方之標記。將10次中可檢測到9次以上之情形設為「◎」,將可檢測到7~8次之情形設為「○」,將可檢測到6次 之情形設為「△」,將可檢測到5次以下之情形設為「×」。再者,於對銅箔表面進行過粗化處理後或者未進行粗化處理而為了設置耐熱層、防銹層、耐候性層等而進行表面處理的情形時,對進行過該耐熱層、防銹層、耐候性層等之表面處理後的表面處理銅箔之表面進行上述測定。The surface of the surface-treated copper foil on the surface of the surface-treated side was bonded to a polyimide film (Experimental Examples A1-1 to A1-30, and Experimental Examples B1-1 to B1-14 were made of a thickness of 25 μm or 50 μm. Or any of the polyimine films of thickness 50 μm manufactured by Toray DuPont, Experimental Examples A2-1~A2-7, B2-1~B2-2, A3-1~A3-9, B3-1~B3 -5, A4-1~A4-8, B4-1~B4-5 are etched on both sides of the PIXEO polyimine film with a thickness of 50 μm and a double-layer copper-clad laminate. (Aqueous ferric chloride solution) was made into an FPC having a circuit width of L/S of 30 μm/30 μm. Thereafter, it was attempted to detect a mark of 20 μm × 20 μm square by a CCD camera via polyimide. The case where 9 or more times can be detected in 10 times is set to "◎", and the case where 7 to 8 times can be detected is set to "○", and 6 times can be detected. In the case of "△", the case where 5 or less times can be detected is set to "X". In addition, when the surface of the copper foil is subjected to a roughening treatment or a roughening treatment, and a surface treatment is performed in order to provide a heat-resistant layer, a rust-preventing layer, a weather-resistant layer, or the like, the heat-resistant layer is prevented. The surface of the surface-treated copper foil after surface treatment such as a rust layer or a weather-resistant layer was subjected to the above measurement.
(10)利用蝕刻獲得之電路形狀(精細圖案特性)(10) Circuit shape obtained by etching (fine pattern characteristics)
將銅箔貼合於層壓用附熱硬化性接著劑之聚醯亞胺膜(厚度50μm,宇部興產製造之Upilex)之兩面。為了對精細圖案電路形成性進行評價,必須使銅箔厚度相同,此處以12μm銅箔厚度為基準。即,於厚度厚於12μm之情形時,藉由電解研磨減厚至12μm厚度為止。另一方面,於厚度薄於12μm之情形時,藉由鍍銅處理增厚至12μm厚度為止。獲得之兩面積層板之單面側係於積層板之銅箔光澤面側藉由感光性阻劑塗佈及曝光步驟而印刷精細圖案電路,利用下述條件對銅箔之不要部分進行蝕刻處理,形成如L/S=20/20μm之精細圖案電路。此處,電路寬度係使電路剖面之底部寬度成為20μm。The copper foil was bonded to both sides of a polyimide film (50 μm thick, Upilex manufactured by Ube Industries, Ltd.) with a thermosetting adhesive for lamination. In order to evaluate the fine pattern circuit formability, it is necessary to make the thickness of the copper foil the same, here based on the thickness of the 12 μm copper foil. That is, when the thickness is thicker than 12 μm, the thickness is reduced to 12 μm by electrolytic polishing. On the other hand, when the thickness is thinner than 12 μm, it is thickened to a thickness of 12 μm by a copper plating treatment. The single-sided side of the two-layered laminate obtained is printed on the shiny side of the copper foil of the laminated board by a photosensitive resist coating and exposure step, and the unnecessary portion of the copper foil is etched by the following conditions. A fine pattern circuit such as L/S = 20/20 μm is formed. Here, the circuit width is such that the bottom width of the circuit section becomes 20 μm.
(蝕刻條件)(etching conditions)
裝置:噴霧式小型蝕刻裝置Device: spray type small etching device
噴霧壓力:0.2MPaSpray pressure: 0.2MPa
蝕刻液:三氯化鐵水溶液(比重40波美)Etching solution: aqueous solution of ferric chloride (specific gravity 40 Baume)
液溫度:50℃Liquid temperature: 50 ° C
於形成精細圖案電路後,浸漬於45℃之NaOH水溶液1分鐘而將感光性阻劑膜剝離。After the fine pattern circuit was formed, the photosensitive resist film was peeled off by immersing in an aqueous NaOH solution at 45 ° C for 1 minute.
.蝕刻因數(Ef)之算出. Calculation of the etching factor (Ef)
使用日立全球先端科技公司製造之掃描型電子顯微鏡照片S4700,以2000倍之倍率自電路上部起對上述所得之精細圖案電路樣品進行觀察,測定電路上部之頂部寬度(Wa)與電路底部之底部寬度(Wb)。銅箔厚度(T)設為12μm。蝕刻因數(Ef)係利用下述式算出。Using the scanning electron microscope photograph S4700 manufactured by Hitachi Global Advanced Technology Co., Ltd., the fine pattern circuit sample obtained above was observed from the upper portion of the circuit at a magnification of 2000 times, and the top width (Wa) of the upper portion of the circuit and the bottom width of the bottom portion of the circuit were measured. (Wb). The copper foil thickness (T) was set to 12 μm. The etching factor (Ef) was calculated by the following formula.
蝕刻因數(Ef)=(2×T)/(Wb-Wa)Etch factor (Ef)=(2×T)/(Wb-Wa)
再者,於對銅箔表面進行過粗化處理後或者未進行粗化處理而為了設置耐熱層、防銹層、耐候性層等而進行表面處理的情形時,對進行過該耐熱層、防銹層、耐候性層等之表面處理後的表面處理銅箔之表面進行上述測定。In addition, when the surface of the copper foil is subjected to a roughening treatment or a roughening treatment, and a surface treatment is performed in order to provide a heat-resistant layer, a rust-preventing layer, a weather-resistant layer, or the like, the heat-resistant layer is prevented. The surface of the surface-treated copper foil after surface treatment such as a rust layer or a weather-resistant layer was subjected to the above measurement.
.傳輸損耗之測定. Measurement of transmission loss
各樣品係將表面處理銅箔之經表面處理側之面貼合於市售之液晶聚合物樹脂(鐘化股份有限公司製造之Vecstar CTZ-50μm)後,以利用蝕刻使特性阻抗成為50Ω之方式形成微帶線路,使用HP公司製造之網路分析儀HP8720C測定透射係數,求出頻率20GHz及頻率40GHz下之傳輸損耗。再者,為了儘可能使評價條件一致,而於將表面處理銅箔與液晶聚合物樹脂貼合後,將銅箔厚度設為18μm。即,於銅箔之厚度厚於18μm之情形時,藉由電解研磨減厚至18μm厚度。另一方面,於厚度薄於18μm之情形時,藉由鍍銅處理增厚至18μm厚度。作為於頻率20GHz之傳輸損耗之評價,將未達3.7dB/10cm設為◎,將3.7dB/10cm以上且未達4.1dB/10cm設為○,將4.1dB/10cm以上且未達5.0dB/10cm設為△,將5.0dB/10cm以上設為×。In each sample, the surface of the surface-treated copper foil was bonded to a commercially available liquid crystal polymer resin (Vecstar CTZ-50 μm manufactured by Chung-Chung Co., Ltd.), and the characteristic impedance was 50 Ω by etching. A microstrip line was formed, and the transmission coefficient was measured using a network analyzer HP8720C manufactured by HP, and the transmission loss at a frequency of 20 GHz and a frequency of 40 GHz was obtained. Further, in order to make the evaluation conditions as uniform as possible, after the surface-treated copper foil and the liquid crystal polymer resin were bonded together, the thickness of the copper foil was set to 18 μm. That is, when the thickness of the copper foil was thicker than 18 μm, the thickness was reduced to 18 μm by electrolytic polishing. On the other hand, in the case where the thickness is thinner than 18 μm, the thickness is increased to 18 μm by a copper plating treatment. As an evaluation of the transmission loss at a frequency of 20 GHz, 3.7 dB/10 cm is set to ◎, 3.7 dB/10 cm or more and less than 4.1 dB/10 cm is set to ○, and 4.1 dB/10 cm or more and less than 5.0 dB/ 10 cm is set to Δ, and 5.0 dB/10 cm or more is set to ×.
再者,印刷配線板或覆銅積層板可藉由將樹脂熔融並去除,而對銅電 路或銅箔表面進行上述各測定。Furthermore, the printed wiring board or the copper clad laminate can be melted and removed by the resin, and the copper electric The above measurements were carried out on the road or copper foil surface.
又,於對銅箔表面進行過粗化處理後或者未進行粗化處理而為了設置耐熱層、防銹層、耐候性層等而進行表面處理的情形時,對進行過該耐熱層、防銹層、耐候性層等之表面處理後的表面處理銅箔之表面進行上述測定。In addition, when the surface of the copper foil is roughened or not subjected to roughening treatment, and the surface treatment is performed in order to provide a heat-resistant layer, a rustproof layer, a weather resistant layer, or the like, the heat-resistant layer is subjected to rust prevention. The surface of the surface-treated copper foil after surface treatment such as a layer or a weather-resistant layer was subjected to the above measurement.
將上述各試驗之條件及評價示於表1~11The conditions and evaluations of the above tests are shown in Tables 1 to 11.
Sv滿足本案發明之範圍之實驗例中,識別性良好,良率亦良好。In the experimental example in which Sv satisfies the scope of the invention of the present invention, the recognition is good and the yield is good.
圖4分別表示上述Rz評價時之(a)實驗例B3-1、(b)實驗例A3-1、(c)實驗例A3-2、(d)實驗例A3-3、(e)實驗例A3-4、(f)實驗例A3-5、(g)實驗例A3-6、(h)實驗例A3-7、(i)實驗例A3-8、(j)實驗例A3-9、(k)實驗例B3-2、(l)實驗例B3-3之銅箔表面的SEM觀察照片。4 shows the experimental examples B3-1, (b) Experimental Example A3-1, (c) Experimental Example A3-2, (d) Experimental Example A3-3, and (e) Experimental Example at the time of Rz evaluation. A3-4, (f) Experimental Example A3-5, (g) Experimental Example A3-6, (h) Experimental Example A3-7, (i) Experimental Example A3-8, (j) Experimental Example A3-9, ( k) Experimental Example B3-2, (l) SEM observation photograph of the surface of the copper foil of Experimental Example B3-3.
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2017033713A1 (en) | 2015-08-21 | 2017-03-02 | 住友電気工業株式会社 | Printed-wiring board substrate, printed-wiring board, and method for producing printed-wiring board substrate |
JP6328679B2 (en) * | 2016-03-28 | 2018-05-23 | Jx金属株式会社 | Copper foil for flexible printed circuit board, copper-clad laminate using the same, flexible printed circuit board, and electronic device |
KR102302184B1 (en) * | 2018-02-01 | 2021-09-13 | 에스케이넥실리스 주식회사 | Copper Film With Dimensional Stability And Texture Stability At High Temperature, And Manufacturing Methods Thereof |
WO2020105289A1 (en) * | 2018-11-19 | 2020-05-28 | 三井金属鉱業株式会社 | Surface-treated copper foil, carrier-attached copper foil, copper-clad laminate, and printed wiring board |
CN116005157B (en) * | 2022-12-13 | 2023-12-19 | 苏州圆格电子有限公司 | Neodymium iron boron surface pretreatment method and system |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101426959A (en) * | 2006-04-28 | 2009-05-06 | 三井金属矿业株式会社 | Electrolytic copper foil, surface-treated copper foil using the electrolytic copper foil, copper-clad laminate using the surface-treated copper foil, and method for producing the electrolytic copper foil |
JP2011240625A (en) * | 2010-05-19 | 2011-12-01 | Jx Nippon Mining & Metals Corp | Copper-clad laminated sheet |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2849059B2 (en) * | 1995-09-28 | 1999-01-20 | 日鉱グールド・フォイル株式会社 | Processing method of copper foil for printed circuit |
KR100632861B1 (en) | 2002-05-13 | 2006-10-13 | 미쓰이 긴조꾸 고교 가부시키가이샤 | Flexible printed wiring board for chip-on-film |
JP2004098659A (en) | 2002-07-19 | 2004-04-02 | Ube Ind Ltd | Copper-clad laminate and its manufacturing process |
JP2004082495A (en) * | 2002-08-27 | 2004-03-18 | Kanegafuchi Chem Ind Co Ltd | Heat-resistant flexible copper-clad laminate with high visibility |
JP2005344174A (en) * | 2004-06-03 | 2005-12-15 | Mitsui Mining & Smelting Co Ltd | Surface-treated copper foil, flexible copper-clad laminate manufactured using the same, and film carrier tape |
JP2006179666A (en) * | 2004-12-22 | 2006-07-06 | Nippon Steel Chem Co Ltd | Laminated body, cof film carrier tape formed by using the laminated body and cof chip mounting method using the cof film carrier tape |
JP4660819B2 (en) * | 2005-12-15 | 2011-03-30 | 福田金属箔粉工業株式会社 | Copper foil for flexible printed wiring boards for COF |
KR20080102545A (en) * | 2007-05-21 | 2008-11-26 | 주식회사 엘지화학 | 2-layer copper clad laminate and manufacturing method for cof packaging |
WO2009041292A1 (en) * | 2007-09-28 | 2009-04-02 | Nippon Mining & Metals Co., Ltd. | Copper foil for printed circuit and copper clad laminate |
US8524378B2 (en) * | 2008-11-25 | 2013-09-03 | Jx Nippon Mining & Metals Corporation | Copper foil for printed circuit |
JP5074611B2 (en) * | 2011-03-30 | 2012-11-14 | Jx日鉱日石金属株式会社 | Electrolytic copper foil for secondary battery negative electrode current collector and method for producing the same |
JP5148726B2 (en) * | 2011-03-30 | 2013-02-20 | Jx日鉱日石金属株式会社 | Electrolytic copper foil and method for producing electrolytic copper foil |
-
2013
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- 2013-09-10 TW TW102132730A patent/TWI482882B/en active
- 2013-09-10 KR KR1020157001484A patent/KR101716988B1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101426959A (en) * | 2006-04-28 | 2009-05-06 | 三井金属矿业株式会社 | Electrolytic copper foil, surface-treated copper foil using the electrolytic copper foil, copper-clad laminate using the surface-treated copper foil, and method for producing the electrolytic copper foil |
JP2011240625A (en) * | 2010-05-19 | 2011-12-01 | Jx Nippon Mining & Metals Corp | Copper-clad laminated sheet |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI722763B (en) * | 2019-02-01 | 2021-03-21 | 長春石油化學股份有限公司 | Surface-treated copper foil and copper clad laminate |
US11145867B2 (en) | 2019-02-01 | 2021-10-12 | Chang Chun Petrochemical Co., Ltd. | Surface treated copper foil |
US11283080B2 (en) | 2019-02-01 | 2022-03-22 | Chang Chun Petrochemical Co., Ltd. | Electrodeposited copper foil, current collector, electrode, and lithium ion secondary battery comprising the same |
US11362337B2 (en) | 2019-02-01 | 2022-06-14 | Chang Chun Petrochemical Co., Ltd. | Electrodeposited copper foil and electrode, and lithium-ion secondary battery comprising the same |
Also Published As
Publication number | Publication date |
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TW201425650A (en) | 2014-07-01 |
WO2014038716A1 (en) | 2014-03-13 |
KR20150034185A (en) | 2015-04-02 |
CN104603333A (en) | 2015-05-06 |
CN104603333B (en) | 2017-11-10 |
KR101716988B1 (en) | 2017-03-15 |
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