TWI462164B - Method for cleaning a wafer stage - Google Patents
Method for cleaning a wafer stage Download PDFInfo
- Publication number
- TWI462164B TWI462164B TW098138658A TW98138658A TWI462164B TW I462164 B TWI462164 B TW I462164B TW 098138658 A TW098138658 A TW 098138658A TW 98138658 A TW98138658 A TW 98138658A TW I462164 B TWI462164 B TW I462164B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- wafer carrier
- cleaning
- flatness
- vacuum
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/04—Cleaning by suction, with or without auxiliary action
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Environmental & Geological Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
本發明關於一種清潔晶圓載盤的方法。本發明特別是關於使用真空組件以原位的方式，即時清潔曝光機台中晶圓載盤表面的方法。The present invention relates to a method of cleaning a wafer carrier. More particularly, the present invention relates to a method of instantly cleaning a wafer carrier surface in an exposure station using a vacuum assembly in situ.
在半導體元件的製造過程之中，一片晶圓通常要經過許多的製程步驟，例如曝光、顯影、蝕刻、離子摻雜、清洗...等等，才能完成。在曝光步驟中，晶圓是置放在晶圓載盤上進行圖案轉移，而晶圓的平坦狀態是影響曝光結果的主要因素之一。除了曝光機台(scanner)自身的平坦狀態以外，晶圓載盤表面的潔淨度也可能影響曝光結果。In the manufacturing process of a semiconductor component, a wafer is usually subjected to a number of process steps such as exposure, development, etching, ion doping, cleaning, and the like. In the exposure step, the wafer is placed on the wafer carrier for pattern transfer, and the flat state of the wafer is one of the main factors affecting the exposure result. In addition to the flat state of the scanner itself, the cleanliness of the wafer carrier surface may also affect the exposure.
一般說來，晶圓載盤自身並不會影響曝光的結果。但是在某些情形下，晶圓載盤的表面受到異物的污染，例如微粒或是灰塵時，使得置放於其上的晶圓局部稍為隆起，因而破壞了晶圓整體的平坦狀態。表面不平坦的晶圓在曝光步驟中會產生局部失焦(defocus)的問題。晶圓局部失焦的問題會造成良率下降。這時晶圓本身不但需要進行重作(rework)的步驟，就連晶圓載盤都還要再進行清潔步驟。目前已知有幾種清潔晶圓載盤的方法。In general, the wafer carrier itself does not affect the results of the exposure. However, in some cases, when the surface of the wafer carrier is contaminated by foreign matter, such as particles or dust, the wafer placed thereon is slightly raised, thereby destroying the flat state of the entire wafer. A wafer having an uneven surface may cause local defocusing problems in the exposure step. The problem of partial out of focus of the wafer can cause a drop in yield. At this time, the wafer itself not only needs to be reworked, but even the wafer carrier has to be cleaned. Several methods of cleaning wafer carriers are known.
其中之一是使用黏性晶圓。這種黏性晶圓會黏住晶圓載盤表面的污染物，而將晶圓載盤表面的污染物帶離曝光機台。但是問題是，由於黏性晶圓載入曝光機台的閘口與一般的晶圓不同，所以必須等到整批晶圓的操作結束才可以使用黏性晶圓，否則會打亂正常的操作流程。這不是一種即時(real-time)可以排除晶圓載盤表面污染物的方法。而且這樣漫長的等待過程通常會附帶產生大量需要重作的晶圓。One of them is the use of viscous wafers. This viscous wafer will stick to the surface of the wafer carrier and carry contaminants from the surface of the wafer carrier away from the exposure station. However, the problem is that since the gate of the viscous wafer loading exposure machine is different from the normal wafer, it is necessary to wait until the end of the operation of the entire batch of wafers to use the viscous wafer, otherwise the normal operation flow will be disturbed. This is not a real-time method that can eliminate contaminants on the wafer carrier surface. And such a long wait process is often accompanied by a large number of wafers that need to be reworked.
另一種方法是使用清潔石(花崗石)。清潔石是用來磨除晶圓載盤表面的微粒，藉此清除晶圓載盤表面的污染物。但是，清潔石的使用仍然有必需要等到整批晶圓的操作結束才可以進行的問題。所以這仍然不是一種可即時排除晶圓載盤表面污染物的方法。況且，這樣的等待過程通常會產生大量需要重作的晶圓。Another method is to use clean stone (granite). The clean stone is used to remove particles from the surface of the wafer carrier, thereby removing contaminants from the surface of the wafer carrier. However, the use of clean stone still has to wait until the end of the operation of the entire batch of wafers. So this is still not a way to immediately remove contaminants from the surface of the wafer carrier. Moreover, such a waiting process usually produces a large number of wafers that need to be reworked.
有鑑於以上的各種現行方法，既不能以爭取時效為目標即時排除晶圓載盤表面污染物，同時，期間的等待過程通常又會產生大量需要重作的晶圓，於是還產生了新的問題有待解決。因此，仍然需要一種清潔晶圓載盤的新穎方法，來克服以上各種現行方法在使用時之諸多限制。In view of the various current methods mentioned above, it is impossible to eliminate the surface contamination of the wafer carrier surface for the purpose of aging, and the waiting process during the period usually generates a large number of wafers that need to be reworked, thus creating new problems to be solved. solve. Accordingly, there remains a need for a novel method of cleaning wafer carriers that overcomes many of the limitations of the various current methods described above.
本發明因此提出一種清潔晶圓載盤的新穎方法。本發明方法不但以爭取時效為目標，可以即時排除晶圓載盤表面污染物，同時，還不需要冗長的等待時間，所以也不會產生大量需要重作的晶圓。本發明清潔晶圓載盤的新穎方法，可以克服以上各種現行方法在使用時之諸多限制。The present invention therefore proposes a novel method of cleaning a wafer carrier. The method of the invention not only aims to achieve aging, but also eliminates the surface contamination of the wafer carrier surface at the same time, and does not require a long waiting time, so that a large number of wafers requiring rework are not generated. The novel method of cleaning a wafer carrier of the present invention overcomes many of the limitations of the various current methods described above.
本發明一方面先提出一種清潔晶圓載盤的方法。首先，提供一晶圓載盤，其中一晶圓位於晶圓載盤上。其次，進行一平坦度掃描步驟，以檢查晶圓之平坦度。之後，當平坦度掃描步驟偵測到一平坦度異常時，將晶圓自晶圓載盤移開。接下來，在移開晶圓後，以一真空組件原位(in-situ)清潔晶圓載盤的表面。In one aspect of the invention, a method of cleaning a wafer carrier is first proposed. First, a wafer carrier is provided, one of which is on the wafer carrier. Next, a flatness scanning step is performed to check the flatness of the wafer. Thereafter, when the flatness scanning step detects a flatness abnormality, the wafer is removed from the wafer carrier. Next, after removing the wafer, the surface of the wafer carrier is cleaned in-situ with a vacuum assembly.
本發明另一方面又提出一種清潔晶圓載盤的方法。首先，提供一晶圓載盤，其中一晶圓位於晶圓載盤上。其次，進行一平坦度掃描步驟，以檢查晶圓之平坦度。之後，平坦度掃描步驟產生一晶圓表面高度分布圖(FLAT map,Focus Leveling Analysis Tool)。繼續，分析晶圓表面高度分布圖以預測一微粒位於晶圓載盤表面上的位置。接下來，當複數個晶圓之複數個晶圓表面高度分布圖均預測微粒位於晶圓與晶圓載盤之間時，移除微粒。Another aspect of the invention further provides a method of cleaning a wafer carrier. First, a wafer carrier is provided, one of which is on the wafer carrier. Next, a flatness scanning step is performed to check the flatness of the wafer. Thereafter, the flatness scanning step generates a FLAT map (Focus Leveling Analysis Tool). Continuing, the wafer surface height profile is analyzed to predict where a particle is located on the wafer carrier surface. Next, the particles are removed when a plurality of wafer surface height profiles of the plurality of wafers are predicted to be between the wafer and the wafer carrier.
本發明提供一種清潔晶圓載盤的新穎方法。一方面，本發明方法不但以爭取時效為目標，在不需要停機的條件下就可以即時排除晶圓載盤表面污染物。另一方面，本發明方法也不需要浪費大量的等待時間，所以還可以將需要重作的晶圓數量降到最低，提高產率並降低成本。The present invention provides a novel method of cleaning a wafer carrier. In one aspect, the method of the present invention not only aims at achieving timeliness, but also eliminates surface contamination of the wafer carrier surface without the need for downtime. On the other hand, the method of the present invention does not need to waste a lot of waiting time, so it is also possible to minimize the number of wafers that need to be reworked, increase the yield and reduce the cost.
本發明一方面提供一種清潔晶圓載盤的方法。第1-8圖例示本發明清潔晶圓載盤方法之一較佳實施例示意圖。首先，如第1圖所示，提供一晶圓載盤101。晶圓載盤101通常是曝光機台(圖未示)中之晶圓載盤101。於晶圓載盤101上有一晶圓110。例如，位於晶圓載盤101上的晶圓110具有一光阻層111，而將要進行一微影步驟，以將一預定圖案(圖未示)轉移至晶圓110上之光阻層111。其次，如第2圖所示，在進行微影步驟時，通常會一併進行一平坦掃描步驟，以檢查晶圓110之平坦度，例如ASML的機臺即提供平坦度掃描步驟的功能。One aspect of the invention provides a method of cleaning a wafer carrier. 1-8 illustrate a schematic view of a preferred embodiment of the method of cleaning a wafer carrier of the present invention. First, as shown in Fig. 1, a wafer carrier 101 is provided. The wafer carrier 101 is typically a wafer carrier 101 in an exposure station (not shown). There is a wafer 110 on the wafer carrier 101. For example, the wafer 110 on the wafer carrier 101 has a photoresist layer 111, and a lithography step is performed to transfer a predetermined pattern (not shown) to the photoresist layer 111 on the wafer 110. Next, as shown in Fig. 2, in the lithography step, a flat scanning step is usually performed together to check the flatness of the wafer 110, for example, the ASML machine provides the function of the flatness scanning step.
在本發明一較佳實施例中，可以使用光學的方式使得平坦度掃描步驟產生一晶圓表面高度分布圖，如第3圖所示。之後，就可以使用電腦程式來分析晶圓表面高度分布圖。分析的結果可以用來偵測晶圓110是否有平坦度異常。分析的結果也可以用來預測平坦度異常的原因是否為微粒位於晶圓載盤101的表面上。因為，如果發現晶圓110存在有平坦度異常時，例如微粒位於晶圓載盤101的表面上，因為微粒常常會被晶圓110覆蓋住而不可見，所以分析的結果還可以用來預測微粒位於晶圓載盤101的表面上的位置。In a preferred embodiment of the invention, the flatness scanning step can be used to optically produce a wafer surface height profile, as shown in FIG. After that, you can use a computer program to analyze the wafer surface height profile. The results of the analysis can be used to detect if the wafer 110 is flat. The results of the analysis can also be used to predict whether the cause of the flatness anomaly is that the particles are on the surface of the wafer carrier 101. Because, if the wafer 110 is found to have flatness anomalies, such as particles on the surface of the wafer carrier 101, since the particles are often covered by the wafer 110 and are not visible, the results of the analysis can also be used to predict the presence of particles. The position on the surface of the wafer carrier 101.
有時候，平坦度異常的原因並不是異物，例如並不是微粒位於晶圓載盤101的表面上。因此，如果每次偵測到平坦度異常即視為微粒位於晶圓載盤101的表面上，有可能會造成系統誤判(false alarm)。為了降低系統誤判的可能性，在本發明一實施方法中，還可以在只有當複數個晶圓110之複數個晶圓表面高度分布圖均預測微粒位於晶圓110與晶圓載盤101之間時，才啟動移除微粒的機制。如此操作的原因是，如果晶圓載盤101的表面上確實附著有微粒時，則複數個晶圓110之複數個晶圓表面高度分布圖都應該會有類似的平坦度異常的結果。如果晶圓載盤101的表面上並未附著有微粒而是其他的原因造成平坦度異常的結果時，則複數個晶圓110之複數個晶圓表面高度分布圖的異常狀況應該各不相同。Sometimes, the cause of the flatness abnormality is not a foreign matter, for example, the particles are not located on the surface of the wafer carrier 101. Therefore, if the flatness abnormality is detected every time, it is considered that the particles are located on the surface of the wafer carrier 101, which may cause a false alarm. In order to reduce the possibility of systematic misjudgment, in an implementation method of the present invention, only when a plurality of wafer surface height profiles of the plurality of wafers 110 predict that the particles are located between the wafer 110 and the wafer carrier 101 Only initiates the mechanism of removing particles. The reason for this operation is that if the surface of the wafer carrier 101 is indeed attached with particles, then a plurality of wafer surface height profiles of the plurality of wafers 110 should have similar flatness abnormalities. If the surface of the wafer carrier 101 is not attached with particles but other causes cause flatness abnormality, the abnormality of the plurality of wafer surface height profiles of the plurality of wafers 110 should be different.
另外，使用者還可以根據製程的臨界尺寸來設定微粒啟 動清除機制的大小。由於製程的臨界尺寸不同，對於微粒尺寸大小的容忍度也不同，所以定出微粒尺寸大小的適當範圍有助於提升微影步驟的效率，又兼顧品質。In addition, the user can also set the particle start according to the critical size of the process. The size of the dynamic clearing mechanism. Due to the different critical dimensions of the process, the tolerance for particle size is also different, so setting the appropriate range of particle size helps to improve the efficiency of the lithography step, while also taking into account the quality.
一方面，如果平坦度掃描步驟沒有偵測到平坦度異常時，就繼續完成微影步驟。另一方面，第2圖所示，即使當平坦度掃描步驟偵測到一平坦度異常112時，仍然繼續完成微影步驟。再來，如第4圖所示，在微影步驟完成以後，以習知之方法將晶圓110自晶圓載盤101移開，而暴露出平坦度異常112的原因。On the one hand, if the flatness scanning step does not detect a flatness abnormality, the lithography step is continued. On the other hand, as shown in Fig. 2, even when the flatness scanning step detects a flatness abnormality 112, the lithography step is continued. Further, as shown in FIG. 4, after the lithography step is completed, the wafer 110 is removed from the wafer carrier 101 by a conventional method to expose the cause of the flatness abnormality 112.
在微影步驟完成與晶圓110移開後，造成平坦度異常112的原因，通常是灰塵或是微粒，就會暴露出來。造成平坦度異常112的原因，通常是因為灰塵或是微粒附著在晶圓110上而隨著晶圓110在裝片時進入了曝光機台(圖未示)中。一但移開晶圓110，造成平坦度異常112的原因，通常是灰塵或是微粒，就會暴露出來。After the lithography step is completed and the wafer 110 is removed, the cause of the flatness anomaly 112, usually dust or particles, is exposed. The cause of the flatness abnormality 112 is usually because dust or particles adhere to the wafer 110 and enter the exposure machine (not shown) as the wafer 110 is loaded. Once the wafer 110 is removed, the cause of the flatness anomaly 112, usually dust or particles, is exposed.
接下來，如第5圖所示，當造成平坦度異常112的原因，即灰塵或是微粒113，暴露出來時，就可以用一真空組件120以原位(in-situ)的方式即時清潔晶圓載盤101的表面。真空組件120可以使用不同的方式來清潔晶圓載盤101表面的方式。Next, as shown in Fig. 5, when the cause of the flatness abnormality 112, that is, the dust or the particles 113, is exposed, the vacuum assembly 120 can be used to clean the crystal in an in-situ manner. The surface of the circular carrier 101. The vacuum assembly 120 can use different ways to clean the surface of the wafer carrier 101.
在本發明一較佳實施例中，如第5圖所示，真空組件120可以包含一真空吸嘴，使用抽吸的方式來移除灰塵或是微粒113。例如，真空吸嘴121可以提供大約至少23Kpa壓力差之吸力，來移除灰塵或是微粒113。在本發明另一較佳實施例中，如第6圖所示，真空組件120可以包含一氣體噴嘴122，使用噴氣的方式，例如噴出氮氣，來移除灰塵或是微粒113。在本發明又一較佳實施例中，如第7圖所示，真空組件120可以同時包含真空吸嘴121與氣體噴嘴122，使得氣體噴嘴122噴出氮氣同時真空吸嘴121移除微粒113。如此一來，可以用來移除較不容易被單一的真空吸嘴121與氣體噴嘴122所移除的灰塵或是微粒113。In a preferred embodiment of the present invention, as shown in FIG. 5, the vacuum assembly 120 may include a vacuum nozzle for removing dust or particles 113 by suction. For example, the vacuum nozzle 121 can provide a suction force of a pressure difference of at least about 23 Kpa to remove dust or particles 113. In another preferred embodiment of the present invention, as shown in FIG. 6, the vacuum assembly 120 can include a gas nozzle 122 for removing dust or particulates 113 by means of a jet, such as by spraying nitrogen. In still another preferred embodiment of the present invention, as shown in FIG. 7, the vacuum assembly 120 can include both the vacuum nozzle 121 and the gas nozzle 122 such that the gas nozzle 122 ejects nitrogen while the vacuum nozzle 121 removes the particles 113. As such, it can be used to remove dust or particles 113 that are less likely to be removed by the single vacuum nozzle 121 and the gas nozzle 122.
較佳者，如第8圖所示，真空組件120還可以進一步包含一定位系統123。定位系統123，一方面可以偵測暴露出來微粒113的位置，另一方面定位系統123還可以導引與輔助真空組件120，例如真空吸嘴121及/或氣體噴嘴122，來更準確地移除微粒113。Preferably, as shown in FIG. 8, the vacuum assembly 120 can further include a positioning system 123. The positioning system 123 can detect the position of the exposed particles 113 on the one hand, and the positioning system 123 can also guide and assist the vacuum assembly 120, such as the vacuum nozzle 121 and/or the gas nozzle 122, for more accurate removal. Particle 113.
當平坦度異常的狀況排除掉之後，晶圓載盤101又可以繼續正常地承載晶圓110，使得後續的晶圓110不會再受到微粒112的干擾。如此一來，需要重作的晶圓數量就降到只有一片，大幅降低重作的成本。另一方面，本發明方法在一偵測到平坦度異常時，就可以起動而快速地排除異常狀況。如此一來，不但以爭取時效為目標，又在不需要停機的條件下就可以即時排除晶圓載盤表面污染物，同時，本發明方法也不需要浪費大量的等待時間，所以還可以提高製程的產率並降低成本。After the flatness abnormality condition is eliminated, the wafer carrier 101 can continue to carry the wafer 110 normally again, so that the subsequent wafer 110 is no longer interfered by the particles 112. As a result, the number of wafers that need to be reworked is reduced to only one, significantly reducing the cost of rework. On the other hand, the method of the present invention can start and quickly eliminate abnormal conditions when an abnormality in flatness is detected. In this way, not only does it aim at aging, but also eliminates the surface contamination of the wafer carrier surface without stopping the machine. At the same time, the method of the invention does not need to waste a lot of waiting time, so the process can also be improved. Yield and reduce costs.
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.
101．．．晶圓載盤101. . . Wafer carrier
110．．．晶圓110. . . Wafer
111．．．光阻層111. . . Photoresist layer
112．．．平坦度異常112. . . Abnormal flatness
113．．．微粒113. . . particle
120．．．真空組件120. . . Vacuum component
121．．．真空吸嘴121. . . Vacuum nozzle
122‧‧‧氣體噴嘴122‧‧‧ gas nozzle
123‧‧‧定位系統123‧‧‧ Positioning System
第1-8圖例示本發明清潔晶圓載盤方法之一較佳實施例示意圖。1-8 illustrate a schematic view of a preferred embodiment of the method of cleaning a wafer carrier of the present invention.
101．．．晶圓載盤101. . . Wafer carrier
113．．．微粒113. . . particle
120．．．真空組件120. . . Vacuum component
121．．．真空吸嘴121. . . Vacuum nozzle
Claims (20)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098138658A TWI462164B (en) | 2009-11-13 | 2009-11-13 | Method for cleaning a wafer stage |
| US12/764,975 US20110114125A1 (en) | 2009-11-13 | 2010-04-22 | Method for cleaning a wafer stage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW098138658A TWI462164B (en) | 2009-11-13 | 2009-11-13 | Method for cleaning a wafer stage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201117272A TW201117272A (en) | 2011-05-16 |
| TWI462164B true TWI462164B (en) | 2014-11-21 |
Family
ID=44010372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098138658A TWI462164B (en) | 2009-11-13 | 2009-11-13 | Method for cleaning a wafer stage |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20110114125A1 (en) |
| TW (1) | TWI462164B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101758420B (en) * | 2008-12-08 | 2016-04-20 | 香港科技大学 | A kind of system, device and method that cooling is provided |
| TWI578429B (en) * | 2015-07-09 | 2017-04-11 | 美光科技公司 | Cleaning device |
| CN109562417A (en) * | 2016-06-17 | 2019-04-02 | 堺显示器制品株式会社 | Foreign matter removal device, foreign matter removal system and foreign matter minimizing technology |
| CN114077164B (en) * | 2020-08-21 | 2023-03-24 | 长鑫存储技术有限公司 | Semiconductor machine cleaning system and semiconductor machine cleaning method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI246148B (en) * | 2004-09-07 | 2005-12-21 | Powerchip Semiconductor Corp | Cleaning fixture for wafer stage of semiconductor tool |
| TW200823967A (en) * | 2006-08-30 | 2008-06-01 | Nikon Corp | Exposure apparatus, device manufacturing method, cleaning method, and cleaning member |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1474505A (en) * | 1974-12-16 | 1977-05-25 | ||
| US5023424A (en) * | 1990-01-22 | 1991-06-11 | Tencor Instruments | Shock wave particle removal method and apparatus |
| KR0182167B1 (en) * | 1996-03-19 | 1999-04-15 | 김광호 | Dry cleaning apparatus of wafer carrier |
| JP2000124122A (en) * | 1998-10-19 | 2000-04-28 | Canon Inc | Semiconductor aligner and manufacture of device, using the same |
| US7370659B2 (en) * | 2003-08-06 | 2008-05-13 | Micron Technology, Inc. | Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines |
| US7700494B2 (en) * | 2004-12-30 | 2010-04-20 | Tokyo Electron Limited, Inc. | Low-pressure removal of photoresist and etch residue |
-
2009
- 2009-11-13 TW TW098138658A patent/TWI462164B/en active
-
2010
- 2010-04-22 US US12/764,975 patent/US20110114125A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI246148B (en) * | 2004-09-07 | 2005-12-21 | Powerchip Semiconductor Corp | Cleaning fixture for wafer stage of semiconductor tool |
| TW200823967A (en) * | 2006-08-30 | 2008-06-01 | Nikon Corp | Exposure apparatus, device manufacturing method, cleaning method, and cleaning member |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110114125A1 (en) | 2011-05-19 |
| TW201117272A (en) | 2011-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2015152475A (en) | Displacement detector, apparatus for processing substrate, method for detecting displacement, and method for processing substrate | |
| US20120023464A1 (en) | Automatic identification of systematic repeating defects in semiconductor production | |
| TWI462164B (en) | Method for cleaning a wafer stage | |
| KR101206923B1 (en) | Apparatus for cleaning single wafer | |
| JP6316703B2 (en) | Substrate processing apparatus and substrate processing method | |
| JP6002112B2 (en) | Substrate defect analysis apparatus, substrate processing system, substrate defect analysis method, program, and computer storage medium | |
| KR101302588B1 (en) | Method for processing wafer | |
| JP2008071891A (en) | Method of cleaning liquid immersion auxiliary plate, liquid immersion lithography, and pattern formation method | |
| US9517494B2 (en) | Method and system for cleaning photomasks | |
| JP2002319561A (en) | Substrate processing device and substrate washing device | |
| US6724476B1 (en) | Low defect metrology approach on clean track using integrated metrology | |
| CN108818161B (en) | Silicon wafer reworking system and method | |
| JPH09283418A (en) | Semiconductor aligner | |
| KR20070055722A (en) | Wafer stage cleaning apparatus of exposure equipment for manufacturing semiconductor | |
| JP2015079072A (en) | Exposure apparatus equipped with substrate crack treatment system | |
| CN112578637A (en) | Method for improving pollution of bearing table and photoetching machine | |
| JP4822048B2 (en) | Pre-maintenance method for semiconductor manufacturing equipment | |
| CN110750033A (en) | Wafer carrying platform of photoetching machine | |
| CN101312114B (en) | Method for preventing silicon chip back face contaminating front in immersion type wet method process | |
| WO2023189894A1 (en) | Substrate processing apparatus, inspection method therefor, and substrate processing system | |
| KR101594399B1 (en) | Semiconductor wafer defect analyzing system and method thereof | |
| KR20090044540A (en) | Apparatus for cleaning reticle and method for fabricating semiconductor device using the same | |
| Jami et al. | Optimization of edge die yield through defectivity reduction. | |
| JP2007266378A (en) | Exposure apparatus, and manufacturing method of semiconductor device | |
| KR20070068886A (en) | Impurities remover of liquid crystal display panel |