1333551 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種缺陷分析系統及其方法，且特別 是有關於一種分析太陽能晶片上之缺陷，以找出缺陷特性 之系統及方法。 【先前技術】 按’當太陽能電池之晶圓基板於製作完成後，必須接 受一連串的檢驗’以確保其品質及效能，其中之熱點分析 (Hot Spot Detection)是用以檢驗晶圓基板上之線路是否 故障’倘若太陽能電池之晶圓基板上具有物理上之損傷， 其晶圓基板上會因應不同的故障情形，放射出不同波長的 熱點，而傳統業界對於太陽能電池之晶圓基板的熱點分析 流程中，測試者首先（1)將待測之晶圓基板放置於一檢測 台上’（2)使一定電壓電源供應器（DC, constant v〇ltage power supply )之正極與晶圓基板之匯流排（Bus Bar )相接， 使其負極與一接地位置（ground )相接，（3 )再以一熱感 紙（Temperature sensitive liquid crystal sheet)覆蓋於晶圓 基板之表面，（4)此時，測試者便可將此定電壓電源供應 器設定一適當之電壓後，對晶圓基板施以供電，若晶圓基 板於熱感紙上具有熱感應的特徵時，則測試者便可記錄熱 感紙具熱感應之特徵對應於晶圓基板表面上之位置，（5) 接著，測試者便將晶圓基板搬移至下一站，（6)利用—顯 微鏡裝置，依據上述測試者於晶圓基板表面上所記錄之位 置，以放大倍數尋找晶圓基板表面上所產生之破片或到 5 1333551 傷’用以研判晶圓基板表面所產生破片或刮傷之失效原因。 然而，由於待測之晶圓基板因供電後，而於熱感紙上 發現具有熱感應的特徵後，測試者必須以目測或量測之方 式來紀錄熱感應特徵相對於晶圓基板上之位置，且於下— 站上’利用顯微鏡裝置重新用低倍率找出精確位置，再用 高倍率確認破片或刮傷之現象，如此，對於大量之測試數 量來說，測試者必須花費大量時間及人力紀錄熱感應特徵 相對於晶圓基板上之位置，以及比對每一晶圓基板上之損 壞位置，以確保並非製程上之缺失，加上測試者必須再行 搬運晶圓基板至下一站，進行尋找晶圓基板表面上之詳細 損壞外觀時，常會因不預期之碰撞或磨損，而更加傷害晶 圓基板之表面上，使其造成物理上之損壞，降低整體生產 之良品率，如此，如何解決上述之缺點及不便，不僅節省 人力及時間，也降低搬運時對晶圓基板表面上，造成損壞 之機率。 ' 【發明内容】 因此本發明的目的之一就是在提供一種太陽能晶片缺 陷^析系統及其方法，用以節省人力及時間，降低搬運時 對晶圓基板表面上，造成損壞之機率。 根據本發明之上述目的，提出一種太陽能晶片缺陷分 析系統及其方法，㈣—平台上設有-活動載具、電源供 應裝置、紅外線攝相裝置、光學顯微裝置及分析系統，活 動載’、裝載有一太陽能晶片，可活動地帶動該太陽能晶片 多動而電源供應裝置與該太陽能晶片電氣相接，並對該 6 1333551 太陽能晶片供應電源，紅外線攝相裝置面對該活動載具之 移動軌跡，並可於面對該太陽能晶片_，感應該太陽能晶 片上之發熱標的，光學顯微裝置可於平台上移動，其移動 . 之軌跡相交於該活動載具之移動軌跡，並於面對該太陽能 晶片時，放大該太陽能晶片上具發熱標的之位置，而分析 系統分別與該紅外線攝相裝置及該光學顯微裝置相連線， 可接收並顯不該紅外線攝相裝置於該太陽能晶片上所感應 之發熱標的，以及接收該光學顯微裝置放大該太陽能晶片 _ 具發熱標的位置之圖像，並使該圖像重疊於其他已接收之 圖像上。 根據本發明之另一態樣，係一種太陽能晶片缺陷分析 系統之方法，係應用於一太陽能晶片之熱點檢測上，包括 ㈣太陽能晶片與-電源供應裝置相接，並接受該電源供 應裝置所供應之電源訊號；將一紅外線攝相裝置感應該太 陽能晶片上之發熱標的，並輸出該太陽能晶片上之發熱標 的至一分析裝置；將一光學顯微裝置放大該太陽能晶片上 Φ 具發熱標的位置之圖像，並輸出該圖像至該分析裝置；由 該分析裝置重疊該圖像至其他已接收之圖像上。 如此，本發明集合紅外線攝相裝置光學顯微裝置及 分析系統於平台上，不僅可快速分析缺陷位置及形態，還 可節省人力，避免對晶片的二次傷害，且分析系統^可幫 助統計分析大量問題晶片之結果。 【實施方式】 本發明係一種太陽能晶片缺陷分析系統及其方法，請 7 參見第1圖所示，係本發明較佳實施例之一示意圖，應用 於一太陽能晶片61之熱點檢測上，此實施例中，平台i上 設有呈X軸走向之一軌道101、電源供應裝置（p〇wer supply ) 2、紅外線攝相裝置（ir therm〇graph ) 3、光學顯 微裝置（Optic microscope) 4及分析系統（Pc ) 5 ,此軌道 1 〇 1上係活動地架設有一活動載具6，活動載具6上裝載有 一待測之太陽能晶片61，不需藉由人力搬運，便可延此軌 道101活動地於平台丨上帶動太陽能晶片61短距離地移 動，而電源供應裝置2相鄰於太陽能晶片61之一側，且其 正極端與太陽能晶片61之匯流排（BUS bar)電氣相 接，而其負極端（-)與活動載具6上之一接地位置（gr〇und) 電氣相接，使得電源供應裝置2可對太陽能晶片61供應逆 向直流偏壓之電源，如此，當太陽能晶片61表面具有破損 等瑕疵時，便會於其破損之位置發出至少一發熱標的。 另外，紅外線攝相裝置3設於平台1上面對此執道1〇1 之其中一段，使得活動載具6可移動太陽能晶片61至紅外 線攝相裝置3之下方，以面對紅外線攝相裝置3,紅外線攝 相裝置3可對太陽能晶片61之表面進行擷取一晝面並於 此畫面上感應及表現出其表面上發熱標的之位置，並使於 此晝面送至上述之分析系統5〇而光學顯微裝置4活動地架 設於平台1所設之一滑軌1〇2上，滑執1〇2與平台i表面 相隔一段距離，並呈Y轴走向，並可以γ軸走向於平台i 上活動地位移，滑軌102係越過此軌道1〇1之另—段上方， 使得活動載具6可移動太陽能晶片61至光學顯微裝置4之 下方，以面對光學顯微裝置4’光學顯微裝置4並於面對該 1333551 太陽能晶片61時，放大太陽能晶片61上具發熱標的之位 置，且藉由活動載具6可以X軸之走向移動太陽能晶片61 及光學顯微裝置4可以γ轴之走向於平台丨上位移之特 性，光學顯微裝置4可依序地擷取太陽能晶片61表面上任 意位置之圖像’並放大太陽能晶片61上具發熱標的位置之 圖像，並使於此圖像送至上述之分析系統5中。 而刀析系統5可為一電腦系統或獨立式之影像分析裝 置，其内設有一疊圖軟體，分析系統5可設於平台i上戋 鄰近平台1之位置，但至少可分別與紅外線攝相裝置3及 光子顯微裝置4電氣相接，接收紅外線攝相裝置3所傳來 之畫面’並將畫面顯示於一螢幕51Ji，以供使用者或分析 系統5記錄其發熱標的之所在位置，·此分析线5亦可接 收光學顯微裝置4所傳來之圖像，並予以儲存，當分析系 統5再度由光學顯微裝置4取得新獲得之一圖像二，分析 系統5便利用疊圖軟體使新取得之圖像重疊於其他已接收 之圖像上’以協助使用者判定太陽能晶片61表面之破損瑕 庇為連續性或單一事件。 入上述實施例中之太陽能晶片61缺陷分析系統5可提供 全自動或半自動之操作行為，因此，可以—氣動裝置帶動 活動載具6或光學顯微裝置4於平台丨上移動，請參照第2 圖所示’係繪示依照本發明之較佳實施例之流程圖，並依 據下列之步驟操作太陽能晶片缺陷分析系統： 步驟（201)將一待測之太陽能晶片61放置於活動載 具6上’使得活動載具6可穩固地承載此太陽能晶片61 ; 步驟（2〇2)使電源供應裝置2之正極與太陽能晶片61 9 1333551 之匯流排相接’並啟動電源供應裝置2，使得太陽能晶片 可接受電源供應裝置2所供應之逆向直流偏壓之電源訊 號’當太陽能晶片61表面具有破損等瑕糾，便會於其破 損之位置呈現至少一發熱標的； 步驟⑵3)使活動載具6及其上之太陽能晶片㈣ X軸走向，移動至紅外線攝相裝置3之下方，令太陽能晶 片61受測之表面可面對紅外線攝相裝置3 ;1333551 IX. Description of the Invention: [Technical Field] The present invention relates to a defect analysis system and method thereof, and more particularly to a system and method for analyzing defects on a solar wafer to find defect characteristics. [Prior Art] According to 'When the wafer substrate of the solar cell is completed, it must undergo a series of inspections' to ensure its quality and performance. Hot Spot Detection is used to verify the wiring on the wafer substrate. Whether the fault is 'if there is physical damage on the wafer substrate of the solar cell, the wafer substrate will emit different wavelengths of hot spots according to different fault conditions, and the traditional industry hotspot analysis process for the wafer substrate of the solar cell The tester first (1) places the wafer substrate to be tested on a test bench' (2) a busbar of a positive voltage and a wafer substrate of a constant voltage power supply (DC) (Bus Bar) is connected so that its negative pole is connected to a grounding ground, and (3) is covered with a temperature sensitive liquid crystal sheet on the surface of the wafer substrate. (4) At this time, The tester can apply power to the wafer substrate after setting the voltage supply to an appropriate voltage. If the wafer substrate is thermally sensitive on the thermal paper. In the feature, the tester can record the thermal sensing characteristics of the thermal paper corresponding to the position on the surface of the wafer substrate. (5) Next, the tester moves the wafer substrate to the next station, and (6) utilizes— The microscope device searches for the fragment generated on the surface of the wafer substrate or the 5 1333551 wound according to the position recorded by the tester on the surface of the wafer substrate at a magnification to diagnose the fragment or scratch caused by the surface of the wafer substrate. The reason for the failure. However, since the wafer substrate to be tested is found to have thermal sensing characteristics on the thermal paper after being powered, the tester must visually or quantitatively record the position of the thermal sensing feature relative to the wafer substrate. And under the station - use the microscope device to re-use the low magnification to find the precise position, and then use the high magnification to confirm the fragmentation or scratching phenomenon, so for a large number of test, the tester must spend a lot of time and manpower records The position of the thermal sensing feature relative to the wafer substrate, and the location of the damage on each wafer substrate to ensure that it is not a process defect, and the tester must carry the wafer substrate to the next station again. When looking for the detailed damage appearance on the surface of the wafer substrate, it often damages the surface of the wafer substrate due to unexpected collision or wear, which causes physical damage and reduces the yield of the overall production. Thus, how to solve The above disadvantages and inconveniences not only save manpower and time, but also reduce the chance of damage to the surface of the wafer substrate during transportation. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a solar wafer defect analysis system and method thereof for saving manpower and time and reducing the probability of damage on the surface of a wafer substrate during transportation. According to the above object of the present invention, a solar wafer defect analysis system and method thereof are provided, (4) - a movable carrier, a power supply device, an infrared phase absorbing device, an optical microscopic device and an analysis system are provided on the platform, and the activity is carried, Loading a solar wafer, moving the solar wafer to move, and the power supply device is electrically connected to the solar wafer, and supplying power to the 6 1333551 solar wafer, and the infrared camera is facing the moving track of the active vehicle. And facing the solar wafer _, sensing the heat generating mark on the solar wafer, the optical microscopic device can move on the platform, and the movement of the trajectory intersects the moving trajectory of the movable carrier, and faces the solar energy At the time of the wafer, the position of the solar wafer with the heat generating target is enlarged, and the analysis system is respectively connected with the infrared phase capturing device and the optical microscopic device, and the infrared imaging device can be received and displayed on the solar wafer. Sensing the heat generating target, and receiving the optical microscopic device to amplify the solar wafer _ with heat The position of the image, and the image is superimposed on the received image of the other. According to another aspect of the present invention, a method for a solar wafer defect analysis system is applied to a hot spot detection of a solar wafer, comprising: (4) a solar wafer is connected to a power supply device, and is received by the power supply device. a power signal; an infrared camera device senses a heat generating target on the solar wafer, and outputs a heat generating target on the solar wafer to an analyzing device; and an optical microscopic device amplifies the position of the Φ heat generating target on the solar wafer An image and outputting the image to the analysis device; the image is superimposed by the analysis device onto other received images. Thus, the optical microscopy device and the analysis system of the infrared ray capturing device of the present invention can not only quickly analyze the position and shape of the defect, but also save manpower and avoid secondary damage to the wafer, and the analysis system can help statistical analysis. The result of a large number of problem wafers. [Embodiment] The present invention relates to a solar wafer defect analysis system and a method thereof. Referring to FIG. 1, a schematic view of a preferred embodiment of the present invention is applied to a hot spot detection of a solar wafer 61. In the example, the platform i is provided with a track 101 in the X-axis direction, a power supply device, an ir therm〇graph 3, an optical microscope (Optic microscope) 4 and An analysis system (Pc) 5 is provided on the track 1 〇1, and a movable carrier 6 is mounted on the movable carrier 6. The movable solar device 61 is loaded with a solar chip 61 to be tested, and the track 101 can be extended without manual handling. Actively driving the solar wafer 61 to move a short distance on the platform, and the power supply device 2 is adjacent to one side of the solar wafer 61, and its positive terminal is electrically connected to the bus bar of the solar chip 61, and The negative terminal (-) is electrically connected to a grounding position on the movable carrier 6, so that the power supply device 2 can supply the reverse current bias power to the solar chip 61, and thus, when the solar wafer 6 is 1 When there is damage on the surface, etc., at least one heat mark will be emitted at the position where it is damaged. In addition, the infrared photographic device 3 is disposed on one of the platforms 1 on the platform 1 so that the movable carrier 6 can move the solar wafer 61 to below the infrared photographic device 3 to face the infrared photographic device. 3. The infrared phase capturing device 3 can take a surface of the solar chip 61 and sense and display the position of the surface on the surface of the solar chip 61, and send the surface to the analysis system 5 described above. The optical microscopy device 4 is erected on one of the slide rails 1〇2 of the platform 1, and the slipper 1〇2 is separated from the surface of the platform i by a distance and is oriented in the Y-axis, and can be oriented toward the platform by the γ-axis. Actively displaced on i, the slide 102 is over the other segment of the track 1〇1 such that the movable carrier 6 can move the solar wafer 61 below the optical microscopy device 4 to face the optical microscopy device 4' When the optical microscopy device 4 faces the 1333551 solar wafer 61, the position of the solar wafer 61 with the heat generating target is enlarged, and the movable carrier 6 can move the solar wafer 61 and the optical microscopic device 4 in the X-axis direction. The gamma axis is on the platform The optical microscopy device 4 can sequentially capture an image of any position on the surface of the solar wafer 61 and magnify the image of the position on the solar wafer 61 with the heat generating target, and send the image to the above. In the analysis system 5. The knife analysis system 5 can be a computer system or a stand-alone image analysis device, which is provided with a stack of software. The analysis system 5 can be disposed on the platform i at a position adjacent to the platform 1, but at least can be separately photographed with the infrared light. The device 3 and the photon microscopy device 4 are electrically connected to each other, and receive the screen transmitted from the infrared phase capturing device 3 and display the screen on a screen 51Ji for the user or the analysis system 5 to record the location of the heat generating target. The analysis line 5 can also receive the image transmitted by the optical microscopy device 4 and store it. When the analysis system 5 again obtains one of the newly obtained images by the optical microscopy device 4, the analysis system 5 facilitates the use of the overlay image. The software overlays the newly acquired image on other received images to assist the user in determining that the surface of the solar chip 61 is damaged as a continuous or single event. The solar wafer 61 defect analysis system 5 in the above embodiment can provide fully automatic or semi-automatic operation behavior. Therefore, the movable carrier 6 or the optical microscopy device 4 can be moved on the platform raft by the pneumatic device, please refer to the second The figure shows a flow chart according to a preferred embodiment of the present invention, and operates the solar wafer defect analysis system according to the following steps: Step (201) placing a solar wafer 61 to be tested on the movable carrier 6 'Enting the movable carrier 6 to stably carry the solar wafer 61; the step (2〇2) connecting the positive electrode of the power supply device 2 to the bus bar of the solar cell 61 9 1333551' and starting the power supply device 2, so that the solar wafer The power signal of the reverse DC bias supplied by the power supply device 2 can be received. When the surface of the solar chip 61 is damaged or damaged, at least one heat generating target is present at the damaged position; the step (2) 3) the active carrier 6 and The solar wafer (4) on the X-axis is moved to the lower side of the infrared photographic device 3, so that the surface of the solar wafer 61 can be exposed to infrared light. 3 apparatus;
步驟（2〇4).當紅外線攝相裝置3開啟後，紅外線攝相 裝置3便開始對該太陽能晶片61受測之表面擷取一晝面， 若太陽能晶片61表面呈現出至少一發熱標的時便對畫面 中具有發熱標的之位置包覆有不同顏色之溫&㈣，嗣， 再傳送此畫面送至分析系統5中； 步驟（ 205)分析系統5判斷傳送至分析系統5中之畫 面是否具有至少-發熱標的’若是，進行步驟（2〇6)，否 則結束此程序。Step (2〇4). When the infrared phase capturing device 3 is turned on, the infrared phase capturing device 3 starts to draw a surface of the surface of the solar wafer 61 to be tested, and if the surface of the solar wafer 61 exhibits at least one heat generating target The position with the heat mark in the picture is covered with the temperature of the different colors (4), and then the picture is sent to the analysis system 5; Step (205) The analysis system 5 determines whether the picture transmitted to the analysis system 5 is If there is at least a heat mark, if yes, proceed to step (2〇6), otherwise the program ends.
步驟（206)使光學顯微裝置4沿¥轴走向，而移動至 太陽能晶片61具有發熱標的上方，令太陽能晶片61具有 發熱標的之位置可面對光學顯微裝置4; 步驟（ 207)當光學顯微裝置4開啟後，光學顯微裝置 4便擁取並放大太陽能晶片61上具發熱標的位置之圖像， 並使於此圖像輸出至分析系統5中；以及 胃步驟（ 208)該分析裝置啟動疊圖軟體，使得此圖像重 疊至其他已接收之圖像上，以判斷是否於相同位置產生發 熱標的，若是，進行步驟（209)，否則，進行步驟（21〇); 步驟U09)判定太陽能晶片61表面之破損瑕症為連 10 1333551 續性事件，並發出一警告訊號，結束此程序。 步驟（210)判定太陽能晶片61表面之破損瑕疵為單 一性事件’並發出另一警告訊號，結束此程序。 综上所述’本發明將以往瑣碎之工作站，結合為一單 糸、先不僅可快速分析太陽能晶片61表面之破損瑕疲之 位置及其所造成之形態，尚不需人力搬運太陽能晶片Μ， 當然降低了太陽能晶片61表面再度被破損之機率，因此， 本發明具有新穎性及進步性，絕對可獲得專利權。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何所屬技術領域中具有通常知識者，在 不脫離本發明之精神和範圍内，當可作各種之更動與潤 飾，因此本發明之保護範圍當視後附之申請專利範圍所= 定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 忐更明顯易懂，所附圖式之詳細說明如下：Step (206) moves the optical microscopy device 4 along the ¥ axis, and moves to the solar wafer 61 with the heat generating target above, so that the position of the solar wafer 61 having the heat generating target can face the optical microscopic device 4; Step (207) when optical After the microscopic device 4 is turned on, the optical microscopy device 4 captures and amplifies the image of the position on the solar cell 61 with the fever mark, and outputs the image to the analysis system 5; and the stomach step (208) the analysis The device activates the overlay software to cause the image to be superimposed on other received images to determine whether the heat generating target is generated at the same position, and if so, proceed to step (209), otherwise, perform step (21〇); step U09) It is determined that the damage of the surface of the solar chip 61 is a continuous event of 10 1333551, and a warning signal is issued to end the procedure. Step (210) determines that the damage on the surface of the solar chip 61 is a single event' and issues another warning signal to end the process. In summary, the present invention combines the previously trivial workstations into a single unit, and can not only quickly analyze the position of the surface of the solar wafer 61 and the shape thereof, and does not need to manually carry the solar wafers. Of course, the probability of the surface of the solar wafer 61 being damaged again is reduced. Therefore, the present invention is novel and progressive, and the patent right is absolutely available. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the scope of the present invention, and it is possible to make various changes without departing from the spirit and scope of the invention. The scope of protection of the present invention is determined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more apparent and understood.
5 :分析系統 51 :螢幕 6 :活動載具 【主要元件符號說明】 1 :平台 101 :軌道 102 :滑軌 11 1333551 2 :電源供應裝置 61 :太陽能晶片 3 :紅外線攝相裝置 201〜210 :步驟 4 :光學顯微裝置5: Analysis system 51: Screen 6: Active vehicle [Description of main component symbols] 1 : Platform 101: Track 102: Slide rail 11 1333551 2: Power supply device 61: Solar wafer 3: Infrared phase pickup device 201 to 210: Step 4: Optical microscopy device
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