TWI387117B - Solar cell devices and fabrication methods thereof - Google Patents

Description

Solar cell device and method of manufacturing same

The present invention relates to a solar cell device, and more particularly to a solar cell device having a nanostructure for improving light absorption efficiency and a method of fabricating the same.

In recent years, the problem of environmental pollution has gradually received international attention, especially the global warming caused by the emission of carbon dioxide gas. In addition, as global demand for energy continues to grow and oil prices rise, the problem of energy shortages is gradually emerging. Therefore, all governments are actively developing new energy sources that are harmless and renewable, and solar energy is undoubtedly one of the renewable energy sources with current development potential. The solar photovoltaic industry has grown rapidly in recent years, and in order to compete with other renewable energy industries, the primary goal is to reduce the cost of generating electricity from solar power systems.

A solar cell is a device that converts light energy directly into electrical energy. The incident photons generate electron holes into the semiconductor, and the electrons and holes are separated by the built-in electric field formed in the semiconductor, and then the electrons and the holes are respectively transmitted to the electrodes at both ends to become a current output.

Since the ruthenium substrate has a high reflection coefficient, it is necessary to reduce the reflection coefficient and increase the light absorption by roughening the surface of the ruthenium substrate. Conventional twinned solar cells use a variety of pyramidal or inverted pyramid structures on the surface of solar cells by etching through the properties of their materials, utilizing surface roughening to increase light absorption efficiency. For thin-film solar cells with a thickness of only a few microns, the structure of the pyramid type is relatively large. In addition to increasing the surface area of the thin film solar cell, the surface coverage of a few carriers is greatly increased, so that the photoelectric conversion efficiency of the thin film solar cell is improved. reduce. Moreover, the thin film solar cell has poor light absorption, so it is necessary to have a better light trapping mechanism than the twinned solar cell.

The photoelectric conversion efficiency based on solar cells is one of the main factors affecting electrical energy. Therefore, there is a need in the industry for a solar cell device that improves the light absorption efficiency of solar cells and further enhances photocurrent and photoelectric conversion efficiency.

In view of the above, in order to solve the problem of the light absorbing efficiency of the solar cell, the embodiment of the present invention provides a solar cell having a nano structure, which reduces the light reflection coefficient of the solar cell by using a nanostructure on the photoelectric conversion layer. To increase the light absorption rate of the solar cell. Based on the nanostructure with enhanced light absorption efficiency, it is indeed enabled to effectively increase the photoelectric conversion efficiency of the solar cell.

Embodiments of the present invention disclose a solar cell device having a nanostructure for improving light absorption performance, comprising: a first conductive layer; a photoelectric conversion structure disposed on the first conductive layer; and a plurality of nanospheres dispersed Embedded on a surface of the photoelectric conversion structure, a portion of each of the nanospheres is exposed outside the photoelectric conversion structure; and a second conductive layer covering the photoelectric conversion structure and the nanospheres.

In one embodiment, a solar cell having a nanostructure includes a substrate, a first conductive layer, a photoelectric conversion layer, a plurality of spheres, and a second conductive layer. The first conductive layer is disposed on the substrate. In addition, the photoelectric conversion layer has a first surface and a second surface opposite to each other, and the first surface is provided with a plurality of grooves and the plurality of balls are disposed on the grooves of the first surface. Further, the second surface of the photoelectric conversion layer is in contact with the first conductive layer. Furthermore, the first surface of the photoelectric conversion layer is in contact with the second conductive layer.

In another embodiment, a solar cell having a nanostructure includes a substrate, a second conductive layer, a photoelectric conversion layer, a plurality of spheres, and a first conductive layer. The second conductive layer is disposed on the substrate, and a surface of the second conductive layer is provided with a plurality of grooves and a plurality of balls are disposed on the grooves. The photoelectric conversion layer has a first surface and a second surface opposite to each other, and the first surface of the photoelectric conversion layer is in contact with the surface of the second conductive layer having a plurality of grooves. Furthermore, the second surface of the photoelectric conversion layer is in contact with the first conductive layer.

In still another embodiment, a solar cell having a nanostructure includes a photoelectric conversion layer, a plurality of spheres, a first conductive layer, and a second conductive layer. The photoelectric conversion layer has a first surface and a second surface opposite to each other, and a plurality of grooves are disposed on the first surface. A plurality of spheres are disposed on the grooves of the first surface. Further, the first conductive layer is disposed on the first surface of the photoelectric conversion layer, and the second conductive layer is disposed on the second surface of the photoelectric conversion layer.

The embodiment of the invention discloses a method for manufacturing a solar cell device, comprising: providing a photoelectric conversion structure formed on a first conductive layer; forming a plurality of concave structures on a surface of the photoelectric conversion structure; The rice spheres are embedded in the recessed structures, wherein a portion of each of the nanospheres is exposed outside the photoelectric conversion structure; and a second conductive layer is formed to cover the photoelectric conversion structure and the nanospheres.

The advantages of the disclosed embodiments are mainly to effectively increase the light absorption efficiency of the solar cell by using the sphere array on the photoelectric conversion layer, and further improve the photoelectric conversion efficiency of the solar cell.

In order to make the invention more apparent, the following detailed description of the embodiments and the accompanying drawings are as follows:

The following is a detailed description of the embodiments and examples accompanying the drawings, which are the basis of the present invention. In the drawings or the description of the specification, the same drawing numbers are used for similar or identical parts. In the drawings, the shape or thickness of the embodiment may be expanded and simplified or conveniently indicated. In addition, the components of the drawings will be described separately, and it is noted that the components not shown or described in the drawings are known to those of ordinary skill in the art, and in particular, The examples are merely illustrative of specific ways of using the invention and are not intended to limit the invention.

Fig. 1 is a schematic cross-sectional view showing a solar cell device according to an embodiment of the present invention. In the first embodiment, a solar cell device 10a having a nanostructure includes a substrate 180, a first conductive layer 140, a photoelectric conversion layer 100, a plurality of nanospheres 130, a second conductive layer 120, and a metal. Electrode 150.

The first conductive layer 140 is disposed on the substrate 180, and the method of forming the first conductive layer 140 can be deposited on the substrate 180 by using various plating methods, for example, by sputtering, thermal evaporation, Or the electron gun evaporation process, but is not limited to the film deposition method disclosed above. The material of the first conductive layer 140 may be metal, including metals such as gold, silver, copper, aluminum, and alloys thereof, or may be transparent conductive oxides, including tin oxide (FTO), indium tin oxide (ITO), and indium oxide. Zinc (IZO), nickel oxide (NIO), etc., but not limited to the materials disclosed in the examples.

In addition, the material of the substrate 180 may be a flexible or inflexible material, such as transparent plastic, glass, quartz, or metal, but is not limited to the material disclosed in the embodiment.

The photoelectric conversion layer 100 has a first surface 108 and a second surface 110. It should be understood that the photoelectric conversion layer 100 is disposed on the first conductive layer 140, and the first conductive layer 140 is in direct contact with the second surface 110 of the photoelectric conversion layer 100. In the present embodiment, the photoelectric conversion layer 100 may be of a non-crystalline thin film solar cell 10a. The photoelectric conversion layer 100 of this type includes a P-type semiconductor layer 102, an I-type semiconductor layer 106, and an N-type. The structure formed by the semiconductor layer 104. In another embodiment, the photoelectric conversion layer 100 can also be a multi-junction type solar cell type, for example, for multi-layer amorphous thin film solar cell junction type, amorphous thin film solar cell and microcrystalline germanium thin film solar cell junction. A photoelectric conversion layer 100 of a type, a tri-five compound, a cadmium telluride (CdTe) or a copper indium gallium diselenide (CIGS) type solar cell. In addition, the photoelectric conversion layer 100 is deposited on the first conductive layer 140 by chemical vapor deposition (CVD), for example, plasma-assisted chemical vapor deposition (PECVD), high-density plasma chemical vapor deposition ( The method of HDPCVD), low pressure chemical vapor deposition (LPCVD), and atmospheric pressure chemical vapor deposition (APCVD) is not limited to the deposition method disclosed in the embodiment.

The first surface 108 of the photoelectric conversion layer 100 is provided with a plurality of grooves 112 which can utilize conventional optical lithography techniques, such as a lithography process implemented by a G-line stepper. Or use next-generation lithography techniques such as EUV Lithography, Multiple E-Beam Lithography, nanosphere Lithography, nanoimprint Lithography), self-assembly or machining, and then through dry etching, such as ICP, RIE, or wet etching, such as KOH, BOE, etc., to form the first groove 130 in the photoelectric conversion layer 100 On the surface 108.

Furthermore, a plurality of spheres 130 are interspersed among a plurality of grooves 112 that have been formed. The sphere 130 is disposed on the substrate 180 by spin coating, and a solution having a plurality of spheres 130 is dropped on the first surface 108 of the photoelectric conversion layer 100 such that the sphere 130 is embedded in the recess 112. In one embodiment, each sphere 130 is the same size and the radius of the sphere 130 is 100 nanometers. In another embodiment, the spheres 130 may also have a radius of less than 200 nanometers, and the size of each sphere may also be different. In addition, a portion of the sphere 130 is embedded in the recess 112 and another portion of the sphere 130 is exposed outside the recess 112. For example, the embedded depth of the sphere 130 is approximately 110 nm, but is not limited to this depth of embedding. The material of the sphere 130 includes a dielectric substance such as ceria or titania or a metal such as gold, silver, copper or aluminum, or an alloy of the above metals, or any combination of the above metals.

2A-2C is a view showing the embedding relationship of the groove and the sphere according to an embodiment of the present invention. In FIG. 2A, a portion of each of the nanospheres 130a is embedded in a conformal recess 112a on the surface of the photoelectric conversion structure 100. For example, the recesses 112a may be bowls of different sizes according to different sizes of the spheres 130a. Rectangular hole. In another embodiment, referring to FIG. 2B, a portion of each of the nanospheres 130b is embedded in a non-conformal recess 112b on the surface of the photoelectric conversion structure 100. The recess 112b may have various geometric shapes. For example, a rectangle, a hexagon, or an octagon, or a polygon, different recesses 112b are formed according to the size of the sphere 130 and the depth of embedding. In another embodiment, referring to FIG. 2C, a portion of each of the nanospheres 130c is embedded in a recess 120c on the surface of the photoelectric conversion structure 100. The recess 120c may be a plurality of spheres 130c of different sizes. A long strip of grooves.

The second conductive layer 120 is disposed on the photoelectric conversion layer 100, and the second conductive layer 120 is in contact with the first surface 108 of the photoelectric conversion layer 100. The purpose of the transparent conductive film is to increase current collection on the electrodes to enhance the photoelectric conversion efficiency of the solar cell 10a. The method of forming the second conductive layer 120 may deposit a conductive material on the photoelectric conversion layer 100 by, for example, a sputtering process, a thermal evaporation process, or an electron gun evaporation process. The material of the second conductive layer 120 may be a transparent conductive oxide (TCO) such as tin oxide (FTO), indium tin oxide (ITO), indium zinc oxide (IZO), or nickel oxide (NIO).

According to another embodiment of the present invention, the metal electrode 150 may be disposed on the second conductive layer 120, and the metal electrode 150 may be an Ohmic contact electrode. In this embodiment, the metal electrode 150 is two parallel metals, and a plurality of metal fingers (not shown) are stretched on both sides of the parallel metal electrode 150. In other embodiments, a plurality of metal finger electrodes may also be referred to as grid line electrodes. In addition to effectively collecting the carriers, the grid wire electrodes must also reduce the proportion of the metal finger electrodes that shield the incident light. Therefore, the width of the lattice lines can generally be less than 50 microns, and the width of the metal electrodes 150 is about 0.5 cm. Further, the metal electrode 150 may be formed on the transparent conductive layer 120 by, for example, a vapor deposition method, a plating method, or a printing method. Furthermore, the material of the metal electrode 150 may be a material such as aluminum, silver, aluminum alloy, or silver alloy.

Figure 3 is a cross-sectional view showing a solar cell device in accordance with another embodiment of the present invention. In FIG. 3, the solar cell device 10b having a nanostructure includes a substrate 180, a second conductive layer 120, a photoelectric conversion layer 100, a plurality of spheres 130, a first conductive layer 140, and a metal electrode 150. .

The material of the substrate 180 includes a flexible or inflexible material such as glass, quartz, or transparent plastic, and is not limited to the material disclosed in the embodiment. The second conductive layer 120 is disposed on the substrate 180. In order to improve the current collecting effect of the metal electrode 150, the photoelectric conversion efficiency of the solar cell 10b can be improved by providing the second conductive layer 120 on the substrate 180. In this embodiment, a plurality of deposition processes can be used to form the second conductive layer 120 on the substrate 180 to form a transparent conductive oxide (TCO). The material of the second conductive layer 120 includes tin oxide (FTO), indium tin oxide (ITO), indium zinc oxide (IZO), nickel oxide (NIO), or other suitable transparent conductive oxide (TCO).

Next, a plurality of grooves 112 are formed on the second conductive layer 120. For example, a lithography process implemented with a G-line stepper or a next-generation lithography technique such as EUV Lithography or multiple electron beam lithography (Multiple E) -Beam Lithography), nanosphere Lithography, nanoimprint Lithography, self assembly or machining, followed by dry etching, such as ICP, RIE, or wet An etching solution such as KOH, BOE or the like is etched to form the groove 112.

In one embodiment, each sphere 130 is the same size and has a radius of about 100 nanometers. In other embodiments, each sphere 130 may also vary in size and may have a radius that is less than 200 nanometers. It should be understood that the spheres 130 are disposed and dispersed on one surface of the second conductive layer 120. The method of scattering the spheres 130 can rotate the substrate 180 by using a spin coater, and then drop the solution having the plurality of spheres 130 into the second. The conductive layer 120 is such that a portion of each of the spheres 130 is embedded in the recess 112, and another portion of each of the spheres 130 is exposed outside the recess 112. In the present embodiment, the depth of the embedded recess 112 of the sphere 130 is about 90 nm. The material of the sphere 130 includes a dielectric substance such as cerium oxide or titanium dioxide, or a metal such as gold, silver, copper or aluminum and an alloy thereof.

It should be noted that the embedding relationship between the groove and the sphere in this embodiment is also shown in the second A-2C diagram. In FIG. 2A, a portion of each of the nanospheres 130a is embedded in a conformal recess 112a on the surface of the photoelectric conversion structure 100. For example, the recesses 112a may be bowls of different sizes according to different sizes of the spheres 130a. Rectangular hole. In another embodiment, referring to FIG. 2B, a portion of each of the nanospheres 130b is embedded in a non-conformal recess 112b on the surface of the photoelectric conversion structure 100. The recess 112b may have various geometric shapes. For example, a rectangle, a hexagon, or an octagon, or a polygon, different recesses 112b are formed according to the size of the sphere 130 and the depth of embedding. In another embodiment, referring to FIG. 2C, a portion of each of the nanospheres 130c is embedded in a recess 120c on the surface of the photoelectric conversion structure 100. The recess 120c may be a plurality of spheres 130c of different sizes. A long strip of grooves.

In another embodiment, the metal electrode 150 is disposed on one side of the second conductive layer 120, and the metal electrode 150 is an Ohmic contact electrode. The metal electrode 150 can be formed on the transparent conductive film by a vapor deposition method, a plating method, or a printing method. Furthermore, the material of the metal electrode 150 may include materials such as aluminum or aluminum alloy.

In the present embodiment, the structure of the photoelectric conversion layer 100 is a type of the amorphous thin film solar cell 10b. The photoelectric conversion layer 100 of a constituent form includes a P-type semiconductor layer 102, an I-type semiconductor layer 106, and an N-type semiconductor layer 104. However, in other embodiments, the photoelectric conversion layer 100 may also adopt a multi-junction type solar cell type, for example, for a multi-layer amorphous thin film solar cell junction type, an amorphous type thin film solar cell, and a microcrystalline thin film solar energy. A photoelectric conversion layer 100 of a solar cell of a type such as a battery junction type, a tri-five compound, cadmium telluride (CdTe) or copper indium gallium diselenide (CIGS).

It should be appreciated that the photoelectric conversion layer 100 has opposing first and second surfaces 108, 110. The photoelectric conversion layer 100 may be deposited on the second conductive layer 120 by various thin film deposition techniques, and the first surface 108 of the photoelectric conversion layer 100 is in direct contact with the second conductive layer 120. The above photoelectric conversion layer can be formed by, for example, plasma assisted chemical vapor deposition (PECVD), high density plasma chemical vapor deposition (HDPCVD), low pressure chemical vapor deposition (LPCVD), and atmospheric pressure chemical gas. The deposition method (APCVD) or the like is not limited to the deposition method disclosed in the embodiment, and is deposited on the second conductive layer 120.

Similarly, the first conductive layer 140 is disposed on the photoelectric conversion layer 100 and is in contact with the second surface 110 of the photoelectric conversion layer 100. The method for forming the first conductive layer 140 can be deposited on the photoelectric conversion layer 100 by various plating methods, for example, by sputtering, thermal evaporation, or electron gun evaporation, but is not limited thereto. The film deposition method disclosed above. The material of the first conductive layer 140 may be metal, including metals such as gold, silver, copper, aluminum, and alloys thereof, or may be transparent conductive oxides, including tin oxide (FTO), indium tin oxide (ITO), and indium oxide. Zinc (IZO), nickel oxide (NIO), etc., but not limited to the materials disclosed in the examples.

Figure 4 is a cross-sectional view showing a solar cell device in accordance with another embodiment of the present invention. In FIG. 4, the structure of the solar cell 10c having a nanostructure includes a photoelectric conversion layer 100c, a plurality of spheres 130, a second conductive layer 160, a first conductive layer 170, and a metal electrode 150.

In the present embodiment, the photoelectric conversion layer 100c may be selected from a type using a crystalline germanium solar cell, and the crystalline germanium photoelectric conversion layer 100c includes a P-type semiconductor layer 102c and an N-type semiconductor layer 104c. In this embodiment, the photoelectric conversion layer 100c has a first surface 108 and a second surface 110 opposite to each other, and the first surface 108 is provided with a plurality of recesses or grooves 112. The plurality of grooves 112 may utilize, for example, a lithography process implemented with a G-line stepper, or with next generation lithography techniques such as EUV Lithography, multiple electron beams. Multiple E-Beam Lithography, nanosphere Lithography, nanoimprint Lithography, self-assembly or machining, followed by dry etching, such as ICP , RIE, or wet etching an etching solution such as KOH, BOE, etc. to form the recess 112.

The plurality of spheres 130 are disposed on the plurality of grooves 112 on the first surface 108 of the photoelectric conversion layer 100c, and the spheres 130 are disposed by rotating the photoelectric conversion layer 100c by a spin coater, and then the solution containing the spheres 130 is dropped. On the first surface 108 of the photoelectric conversion layer 100c, the sphere 130 is caused to be embedded in the groove 112. In this embodiment, each sphere 130 has the same size and the radius of the sphere 130 is 100 nm, and may also be a sphere 130 having a radius of 200 nm or less and the size of each sphere may be different. Furthermore, a portion of the sphere 130 is embedded in the recess 112, and another portion of the sphere 130 is exposed outside the recess 112. In this embodiment, the recess 130 has a depth of 110 nm, but this embodiment is not used. The embedded depth is limited. The material of the sphere 130 includes a dielectric substance such as cerium oxide or titanium dioxide, or a metal such as gold, silver, copper or aluminum and an alloy thereof.

It should be noted that the embedding relationship between the groove and the sphere in this embodiment is also shown in the second A-2C diagram. In FIG. 2A, a portion of each of the nanospheres 130a is embedded in a conformal recess 112a on the surface of the photoelectric conversion structure 100. For example, the recesses 112a may be bowls of different sizes according to different sizes of the spheres 130a. Rectangular hole. In another embodiment, referring to FIG. 2B, a portion of each of the nanospheres 130b is embedded in a non-conformal recess 112b on the surface of the photoelectric conversion structure 100. The recess 112b may have various geometric shapes. For example, a rectangle, a hexagon, or an octagon, or a polygon, different recesses 112b are formed according to the size of the sphere 130 and the depth of embedding. In another embodiment, referring to FIG. 2C, a portion of each of the nanospheres 130c is embedded in a recess 120c on the surface of the photoelectric conversion structure 100. The recess 120c may be a plurality of spheres 130c of different sizes. A long strip of grooves.

In another embodiment, the second conductive layer 160 is disposed on the photoelectric conversion layer 100c, and the second conductive layer 160 is in contact with the first surface 108 of the photoelectric conversion layer 100c. It should be understood that the purpose of the second conductive layer 160 is to increase current collection on the electrodes to enhance the photoelectric conversion efficiency of the solar cell 10c. The method for forming the second conductive layer 160 may be deposited on the photoelectric conversion layer 100c by various plating methods, for example, by sputtering, thermal evaporation, or electron gun evaporation, but is not limited thereto. The film deposition method disclosed above. The material of the second conductive layer 160 may include tin oxide (FTO), indium tin oxide (IT O), indium zinc oxide (IZO), nickel oxide (NIO), or other suitable transparent conductive oxide.

Furthermore, a metal electrode 150 can be disposed on the second conductive layer 160, and the metal electrode 150 functions as an Ohmic contact electrode. In the present embodiment, the metal electrode 150 is two parallel metals, and a plurality of interdigitated metal structures (not shown) are stretched on both sides of the parallel metal electrodes 150. In general, a plurality of interdigitated metal structures may be referred to as lattice line electrode structures. In addition to effectively collecting the carriers, the grid electrode structure needs to reduce the proportion of the metal finger electrode structure to shield the incident light. Therefore, the width of the lattice lines can generally be less than 50 microns, and the width of the metal electrodes 150 is about 0.5 cm. Further, the metal electrode 150 may be formed on the second conductive layer 160 by, for example, a vapor deposition method, an electroplating method, or a printing method. Furthermore, the material of the metal electrode 150 includes materials such as aluminum, silver, aluminum alloy, or silver alloy.

The first conductive layer 170 is disposed and in contact with the second surface 110 of the photoelectric conversion layer 100c. The first conductive layer 170 is formed by depositing a conductive material on the photoelectric conversion layer 100c by, for example, a sputtering process or a thermal evaporation process. The material of the first conductive layer 170 may be metal, including metals such as gold, silver, copper, aluminum, and alloys thereof, or may be transparent conductive oxides, including tin oxide (FTO), indium tin oxide (ITO), and indium oxide. Zinc (IZO), nickel oxide (NIO), etc., but not limited to the materials disclosed in the examples.

Figure 5 is a graph showing the penetration curves of solar cell devices at different wavelengths in accordance with an embodiment of the present invention. In Fig. 4, it is clear that the photoelectric conversion layer 100 having no nanostructure has a light energy transmittance of about 0.65 (a.u.) in a wavelength range of from 400 nm to 1100 nm. Compared with the photoelectric conversion layer having a nanosphere structure provided by the embodiment of the present invention, the energy penetration is obviously improved, especially when the sphere is embedded in the groove of the photoelectric conversion layer and the depth of the photoelectric conversion is 110 nm. The layer has a better energy penetration effect.

In the solar cell device having a nano structure provided by the embodiment of the present invention, a plurality of grooves are first disposed on the first surface of the photoelectric conversion layer, and a sphere is embedded in each groove of the photoelectric conversion layer. The solar cell having a nanostructure can effectively increase the light absorption efficiency of the solar cell by using the sphere array on the photoelectric conversion layer, and improve the photoelectric conversion efficiency of the solar cell.

The present invention has been disclosed in the above various embodiments, and is not intended to limit the scope of the present invention. Any one of ordinary skill in the art can make a few changes and refinements without departing from the spirit and scope of the invention. . The scope of the invention is defined by the scope of the appended claims.

10a, 10b, 10c. . . Solar cell device

100, 100c. . . Photoelectric conversion layer

102, 102c. . . P-type semiconductor layer

104, 104c. . . N-type semiconductor layer

106. . . I type semiconductor layer

108. . . First surface

110. . . Second surface

112, 112c. . . Groove

112a-112b. . . Concave hole

120. . . Second conductive layer

130, 130a-130c. . . Nanosphere

140. . . First conductive layer

150. . . Metal electrode

160. . . Second conductive layer

170. . . First conductive layer

180. . . Substrate

Fig. 1 is a schematic cross-sectional view showing a solar cell device according to an embodiment of the present invention.

2A-2C are diagrams showing the inlaid relationship of the groove and the sphere according to an embodiment of the present invention.

Figure 3 is a cross-sectional view showing a solar cell device in accordance with another embodiment of the present invention.

Figure 4 is a cross-sectional view showing a solar cell device in accordance with another embodiment of the present invention.

Figure 5 is a graph showing the energy transmittance curves of solar cell devices at different wavelengths in accordance with an embodiment of the present invention.

10a. . . Solar cell device

100. . . Photoelectric conversion layer

102. . . P-type semiconductor layer

104. . . N-type semiconductor layer

106. . . I type semiconductor layer

108. . . First surface

110. . . Second surface

112. . . Groove

120. . . Second conductive layer

130. . . Nanosphere

140. . . First conductive layer

150. . . Metal electrode

180. . . Substrate

Claims (22)

A solar cell device having a nanostructure for improving light absorption performance, comprising: a first conductive layer; a photoelectric conversion structure disposed on the first conductive layer; and a plurality of nanospheres dispersed in the photoelectric conversion structure On one surface, a portion of each of the nanospheres is exposed outside the photoelectric conversion structure; and a second conductive layer covers the photoelectric conversion structure and the nanospheres. The solar cell device of claim 1, further comprising a patterned electrode disposed on the second conductive layer. The solar cell device of claim 1, wherein the nanospheres have a radius ranging from 0 to 200 nm. The solar cell device of claim 3, wherein a portion of each of the nanospheres is embedded in a conformal recess in the surface of the photoelectric conversion structure. The solar cell device of claim 3, wherein a portion of each of the nanospheres is embedded in a non-conformal recess in the surface of the photoelectric conversion structure. The solar cell device of claim 3, wherein a portion of each of the nanospheres is embedded in a recess in the surface of the photoelectric conversion structure. The solar cell device according to claim 1, wherein the nanospheres are made of a dielectric material or a metal material. The solar cell device of claim 7, wherein the dielectric material comprises ceria, titania, or other oxide dielectric material. The solar cell device according to claim 7, wherein the metal material comprises gold, silver, copper, aluminum, an alloy of the above metals, and any combination of the above metals. The solar cell device according to claim 1, wherein the material of the first conductive layer comprises gold, silver, copper, aluminum, an alloy of the above metals, tin oxide (FTO), indium tin oxide (ITO), oxidation. Indium zinc (IZO), nickel oxide (NIO), or other suitable transparent conductive oxide. The solar cell device according to claim 1, wherein the second conductive layer is a transparent conductive layer, including tin oxide (FTO), indium tin oxide (ITO), indium zinc oxide (IZO), and nickel oxide (NIO). ), or other suitable transparent conductive oxide. The solar cell device of claim 1, wherein the photoelectric conversion structure is an amorphous silicon solar cell structure comprising a P-type semiconductor layer, an I-type semiconductor layer, and an N-type semiconductor layer. The solar cell device according to claim 1, wherein the photoelectric conversion structure is a crystalline germanium solar cell structure comprising a P-type semiconductor layer and an N-type semiconductor layer. A method of manufacturing a solar cell device, comprising: providing a photoelectric conversion structure formed on a first conductive layer; forming a plurality of concave structures on a surface of the photoelectric conversion structure; and embedding a plurality of nanospheres embedded in the In the recessed structure, a portion of each of the nanospheres is exposed outside the photoelectric conversion structure; and a second conductive layer is formed to cover the photoelectric conversion structure and the nanospheres. The method of fabricating a solar cell device according to claim 14, wherein the step of forming the plurality of recessed structures comprises applying a lithography step and an etching step to form the recessed structures. The method of manufacturing a solar cell device according to claim 15, wherein the recessed structures include recesses conformed to the plurality of nanospheres, recesses that are non-conform with the nanospheres, and a groove. The method of manufacturing a solar cell device according to claim 14, wherein the dispersing the plurality of nanospheres is performed by spin coating a solution containing the nanospheres. The method for manufacturing a solar cell device according to claim 14, wherein the nanospheres are made of a dielectric material or a metal material, wherein the dielectric material comprises ceria, titania, or other oxide. An electrical material, and wherein the metallic material comprises gold, silver, copper, aluminum, an alloy of the foregoing metals, and any combination of the foregoing. The method for manufacturing a solar cell device according to claim 14, wherein the material of the first conductive layer comprises gold, silver, copper, aluminum, an alloy of the above metals, tin oxide (FTO), indium tin oxide (ITO). ), indium zinc oxide (IZO), nickel oxide (NIO), or other suitable transparent conductive oxide. The method of manufacturing a solar cell device according to claim 14, wherein the second conductive layer is a transparent conductive layer comprising tin oxide (FTO), indium tin oxide (ITO), indium zinc oxide (IZO), and oxidation. Nickel (NIO), or other suitable transparent conductive oxide. The method of manufacturing a solar cell device according to claim 14, wherein the photoelectric conversion structure is an amorphous germanium solar cell structure comprising a P-type semiconductor layer, an I-type semiconductor layer, and an N-type semiconductor Floor. The method of manufacturing a solar cell device according to claim 14, wherein the photoelectric conversion structure is a crystalline germanium solar cell structure comprising a P-type semiconductor layer and an N-type semiconductor layer.