1287485 九、發明說明： 【發明所屬之技術領域】 本案係麵用於[匕學#鐵研贬研雜整裝置(J)res㈣，雜 一種附則匕學機械研磨固定環(Retaining Ring)之研磨修整裝置。 曰 【先前技術】 隨著半领製程線寬愈來愈細，晶圓製程中對於薄膜_的平坦^ 求也愈來愈高，_製雜用也日益獻，化學機M_((taicai MotoicBi Polish，am備成為近年來半賴製程中日益關鍵的製造步 驟，設備市場需求也快速成長。OIP設備這幾年市場快速成長主要是由 於CMP製程處理與傳統晶圓平坦蜮理方式树交有主要幾項優勢··卜由於 W研磨後表面更為平坦，達成更好品質的曝絲侧效果及良率；2、更 好的清理絲’減低由於之前製減理不完全對接下絲面敏感雜高製 程的影響。由於01P的處理可使微影照射區域更精確對準所需雜，並可 以紐金屬_綠與層間堆疊時產生嫩崎線或贿現象，也因此使金 屬層數可從之前2至3層推升至6至9層。 隨著半賴製程技術不斷朝向深次微米推進，晶圓平坦化的重要性也 不__各家晶圓廠。由於近年來》設備市場成長快速·的樹、零 組件與製程中所需的研磨劑等也相對的急速發展。在化學麵平坦化⑽ (Chenucal Mechanical Planarization)精密的抛光製程中，其係於抛光時 晶圓膽在-舰轉的拋光氣⑽上。拋光塾通常為p〇lyurethgne所製 而且也f含有航。抛魅只紗職晶_「縣」。麟晶目表面突出 處乃以塗佈在拋光塾表面的磨漿(sluny)拋光。磨装内含有與線細近的 5 1287485 懸厚磨粒。磨漿的液體通常也含氧化劑氣g儀劑。液體會^晶圓表面反^ 生成#撒的氧似勿’ 1^是⑽的化學聽。磨粒以抛光塾支樓就可^擊 晶圓的表面，這I尤是CMP的;^〇 請參閱第一圖’其係揭示一習知QJP衡戒研磨結構示意圖。如圖所示， 該CMP機台包含一平台n，其上設置有一轉動之抛光塾12，而該抛_12 之表面具有一自研磨漿輸配器13流下之研磨液14。而在進行晶圓15表面 研磨時’該晶圓15係由一晶圓夾具16 jg定，而該晶圓15：^卜圍即係以一 固定壞(RetainingRing)i7固定；利用晶圓夾具16施加壓力並相對該拋光 塾12轉動’即可進行晶圓之表面機械研磨。一般而言，施加的壓力及相對 ，》的磨除速率就越高。為了使拋光液能均勻的分佈於抛光塾 12表面，拋光塾12的表面通常具有不同形式的溝槽(約2〇卿深)以利於 達到拋光液的均勻分佈。但在研磨時，碎層獅的磨漿也會累積在拋光 墊12的表面使其變得既硬又滑(Glazing)。拋光翻口晶圓15的接 就降低了磨粒的接觸壓力，這樣晶圓的拋光速率就會大減。更 有甚者，骯髒的拋光塾12會污染晶圓15的表面使其缺陷增加。為了維持拋 絲率及保持晶圓乾淨，拋光墊12必須以「鑽石碟」（Diamond Disk)18修 整(Dressing或Conditioning)，這樣CMP才能持續進行。 然而在實際使用時，01P拋光塾12研磨晶圓所使用到的區域，與鑽石 碟18進行抛光墊12的修整區域並非一致。因此，如何研發一種應用化學機 械研磨之修整器，以最精簡的結構及處理流程即可達到有效整修拋光勢的目 的’這的確是目前此一相關領·斤需雜發展研究之目標。本案發明人等， 爰精心研究，並以其從事該項研究領域之多年經驗，遂提出本案附於|匕學機 1287485 械研磨固定環(Retaining Ring)之修整裝置，解決習知之問題，同時増進製 程能力，實為一不可多得之發明。 【發明内容】 本案之主要目的為提供一種附於化學機械研磨固定環^j^) 之修整裝置’以农精間的結構即可達到有效整修拋光塾的目的。由於本案將 特定修整器固定於CMP之研磨固定環(Retaining Ring)上，故可於進行晶圓 拋光時，同日梅整拋光墊以維持其良好的拋銳率。且可有效避免〇^固 tif(RetainingRing)於壽命#到時使拋光液較不易流入晶圓中心處，而造成 晶圓内外抛光速度不同的缺點。 為:社i4目的’本案之一鑛義實雌態為提供一種附於化學麵研磨 固定環(RetainingRing)之研磨修整裝置，其整體結構至少包含一固定夾具， 用以嵌固一晶圓，以於一拋光塾上進行化學機械研磨，其中該固定失具更具 有一接觸環面，用以定置維持該晶圓底面之抛光液，避免過少之抛光液流入 晶圓底面中心處而造成晶圓内外拋光速度不同；以及一修整單元，設置於該 固定夾面，形成一修整面，用以衡于該晶圓抛光時，同日梅整該抛光 墊，以維持該拋光墊良好的抛光放率。 構想’其中該固定夾具更包Ug定環(RdainingRing) ，以形 成該接觸環面。 根攄上述構想’其中该修整單元係包含複數個修整器，平均環設於該固 定環之底面。 根據上述構想，其中該修整器係為一鑽石碟〇1287485 IX. Description of the invention: [Technical field to which the invention belongs] The case is used for the grinding and dressing of the mechanical polishing ring (Retaining Ring) of the 匕学# 铁研贬研杂设备(J)res(四) Device.曰[Prior Art] As the line width of the semi-neck process becomes finer and finer, the flatness of the film _ is becoming higher and higher in the wafer process. The _ system is also increasingly used, the chemical machine M_((taicai MotoicBi Polish Am is becoming an increasingly critical manufacturing step in the process of the past few years, and the equipment market demand is also growing rapidly. The rapid growth of OIP equipment in recent years is mainly due to the fact that CMP process processing and traditional wafer flattening methods have a major relationship. Advantages······················································································ The influence of the process. Since the processing of 01P can make the lithographic irradiation area more precisely align with the required impurities, and the new metal _ green and the interlayer stacking will produce the tenderness line or bribe phenomenon, and thus the number of metal layers can be from the previous 2 Pushing up to the 6th to the 9th floor. As the process technology continues to move toward deep micron advancement, the importance of wafer flattening is not __Fabrics. Due to the rapid growth of the equipment market in recent years· Tree, components and The abrasives required in the process are also relatively rapidly developed. In the precise polishing process of the chemical plane flattening (10) (Chenucal Mechanical Planarization), it is attached to the polishing gas (10) of the wafer during polishing.塾 is usually made by p〇lyurethgne and also contains voyage. The surface of the surface of the lining crystal is polished by sluny coated on the surface of the polished enamel. Contains 5 1287485 hanging thick abrasive grains close to the line. The refining liquid usually also contains the oxidant gas g. The liquid will be on the surface of the wafer, and the oxygen will appear on the surface of the wafer. The abrasive grain can be used to polish the surface of the wafer, which is especially CMP; ^〇Please refer to the first figure, which reveals a schematic diagram of a conventional QJP scale grinding structure. As shown in the figure, The CMP machine includes a platform n on which a rotating polishing crucible 12 is disposed, and the surface of the polishing tray 12 has a polishing liquid 14 flowing down from the slurry distributor 13 while the surface of the wafer 15 is being ground. The wafer 15 is defined by a wafer holder 16 jg, and the wafer 15 is fixed by a defect (Re tainingRing) i7 fixed; using the wafer holder 16 to apply pressure and rotate relative to the polishing crucible 12, the surface mechanical polishing of the wafer can be performed. Generally, the applied pressure and relative, the grinding rate is higher. The polishing liquid can be evenly distributed on the surface of the polishing crucible 12. The surface of the polishing crucible 12 usually has different forms of grooves (about 2 inches deep) to facilitate uniform distribution of the polishing liquid, but when grinding, the layered lion The refining will also accumulate on the surface of the polishing pad 12 to make it hard and slippery. The polishing of the flipped wafer 15 reduces the contact pressure of the abrasive particles, so that the polishing rate of the wafer is greatly reduced. . What is more, a dirty polishing crucible 12 can contaminate the surface of the wafer 15 to increase defects. In order to maintain the throw rate and keep the wafer clean, the polishing pad 12 must be trimmed (Dressing or Conditioning) with a Diamond Disk 18 so that the CMP can continue. However, in actual use, the 01P polishing 塾12 is used in the area where the wafer is used, which is not consistent with the polishing area of the polishing pad 12 of the diamond disk 18. Therefore, how to develop a trimmer using chemical mechanical grinding can achieve the goal of effectively refining the polishing potential with the most streamlined structure and processing flow. This is indeed the goal of this related research. The inventor of the case, etc., carefully studied and used his years of experience in the field of research, and proposed the dressing device attached to the 1287485 mechanical polishing ring (Retaining Ring) of this school to solve the problems of the problem and at the same time Process capability is an invaluable invention. SUMMARY OF THE INVENTION The main object of the present invention is to provide a trimming device attached to a chemical mechanical polishing ring ^j^), which can achieve the purpose of effectively refining and polishing the concrete structure. Since the specific dresser is fixed on the CMP's Retaining Ring in this case, the polishing pad can be polished on the same day to maintain its good sharpness. Moreover, it can effectively avoid the disadvantage that the polishing liquid is less likely to flow into the center of the wafer at the time of the life of the tif (RetainingRing), resulting in different polishing speeds inside and outside the wafer. For the purpose of the i4 purpose, one of the present inventions is to provide a polishing dressing device attached to a chemical polishing ring (RetainingRing), the overall structure of which includes at least one fixing fixture for embedding a wafer to Chemical mechanical polishing on a polished crucible, wherein the fixed dislocation has a contact ring surface for fixing the polishing liquid on the bottom surface of the wafer, so as to prevent too little polishing liquid from flowing into the center of the bottom surface of the wafer, thereby causing the inside and outside of the wafer The polishing speed is different; and a trimming unit is disposed on the fixing surface to form a trimming surface for balancing the polishing pad on the same day to maintain a good polishing rate of the polishing pad. It is contemplated that the fixing fixture further includes a Ugding ring to form the contact annulus. According to the above concept, wherein the trimming unit comprises a plurality of trimmers, the average ring is disposed on the bottom surface of the fixing ring. According to the above concept, wherein the dresser is a diamond dish
^^48S "^據^案另一態樣，本案更提供一麵用於化學麵研磨之研磨修整I ，包含：一固定環(RetainingRing)，用以嵌固一晶圓，以方卜一拋光墊上進 研磨；以及複數個修整器’環設於該固定環底面，用以進行該晶 抛光時’同日播整該拋光墊，以維持該拋光塾良好的拋銳率。 構想’其中該修整器係為一鑽石碟(DiamondDisk)。 telhit構想’其中該固定環係設置於一晶圓失具之上。 為達上述目的，本案之一較廣義實施樣態為提供一纖用於化學機械研 磨之研磨修整裝置，包含：一雜體，用以嵌固一晶圓，峨_拋光墊上 進行化學顯研磨，其中該雜體更具有-接觸環面，設置於該職體技 以定量維持該晶圓底面之拋光液，避免過少之拋光液流入晶圓底面中 心處而造成晶圓内外拋妇^不同；以及一修整面，設置於該底 面’用似键行該晶圓拋光時，同雜整該搬光墊，以維持該拋光墊良好的 拋起鱗。 根據上述構想’其中該修整面係環設於該接觸環面之外圍。 根據上述構想，其中該環狀體係由一固定所^成。 根據上述構想，其中該修整面係由複數個修整器平均環設於該固定環之 底面所形成。 "^據上^述構想’其中該修整器係為一鑽石碟（DiamondDisk) 〇 【實施方式】 案特徵與優點的一些典型實施例將在後段的說明中詳細敘述。應 在不同的態壯具有各種的變化，其皆不脫鉢案的範 8 •1287485 園，^其中，說明及圖質上係當作說明之用，而非用以限制本案。 明參閱第一圖，其係揭示本案較佳實施例之 定環(Retainhg _之研雜整裝置。如圖所示，包含一固定環取―g 啊)2卜用以嵌固一晶圓，以於^抛光塾上進行化學麵研磨；以及^ 個修整器22，環設於該固定環21底面，用以進形亥晶圓抛光時，同日梅整 雜光墊’以維持該拋光塾良好的拋纽率。在實際應用時，該複數悃修整 器22部份可由複數個鑽^碟所構成。當然，該固定環21係 設置於一晶圓夾具之上。 為進一步清楚說明本案之發明結構，請再參閱第3圖。其係揭示第2 圖之研磨修整裝置於應用時之示意圖。如圖所示，前述之固定環21即為一 固定夾具20之部份，用以嵌固一晶圓23，並於一拋光墊24上對該晶圓23 進行化學機械研磨，其中該固定環21所形成之一接觸環面，係用以定量維 持該晶圓23底面德絲25，並避免過少德规25济八晶圓底面中心 處而造成晶圓23内外拋光速度不同。另一方面，本案最主要之特色即在於 將複數個修整器22環設於該固定環21之底面，以形成一具修整面之修整單 元’用以在進行該晶圓23拋光之時，同時以修整單元修整該拋光墊24，以 維持吞亥抛光塾良好的抛文率。 而本案之研磨修整裝置在實際進行化學機械研磨時，該拋光墊24會於 先固定於一旋轉平台26，在旋轉的同時，自一研磨漿輸配器27流下之拋光 液25可平均散佈於該拋光墊24之上。另一方面，透過該固定環21戶斤嵌固 之該晶圓23，因該固定夾具20之旋轉與加壓而與其下方之拋光液25和拋 光墊24進行化學機械之研磨。當然最重要的是環設於該固定環21底面之修 9 1287485 整器22，可同時_固定爽具20域類加壓而向w 維持其良好的拋瓣。故本案之研磨修整結構可觸晶圓拋光時，同時 修整拋光墊以維持麵良好的拋級率。 請參閱第四圖，其係揭示本案另-雛實_<1_^__ 固定環(RetainingRing)之研磨修整裝置。包^淨獻體41，用以嵌固一晶圓 (請同時參閱第三圖），以於一拋光墊上進行化學機赫研磨，其中該環狀體 41更具有一接觸環面411，設置於該環狀軸面，用以定量維持該晶圓底 面之拋絲’避免過少之抛絲流入晶圓底面中心處而造成晶圓内外抛光速 度不同；以及一修整面421，設置於該剩大體^面，用^^^断該晶圓拋 &時’ 整該拋光墊’以維持該拋光塾良好的抛光效率。其中該修整面 421可由複數個鑽石碟(piamondDisk)所構成，而於該接觸環面411外圍形 成特殊圖樣之修整單元42。於實際應用時，該修整單元42之圖樣並不受限， 而在本實施例中，修整單元42所形成之修整面421為一環狀面，與接觸環 面411相似，如此於使用時，可更平均分散由固定夾具所施加之壓力，且有 效避免CMP固定環(Retaining Ring)於壽命陕到時使抛光液不易流入晶圓中 心處而造成晶圓内外抛光速度不同的缺點 綜上所述，本案提供一種附於化學機械研磨固定環(RetainingRing)之研 磨修整裝置，以最精簡的結構即可達到有效整修拋光墊的目的。其中本案更 將特定修整器固定於CMP之研磨固定環(Retaining Ring)上，故可於進行晶 圓拋光時，同時修整拋光墊以維持其良好的拋光效率。且可有效避免_ 固定環(Retaining Ring)於壽命陕到時使拋光液不易流入晶圓中心處而造成 晶圓内外拋光速度不同的缺點，此為習知技藝無法達成。本案技術具有實用 1287485 性、新穎性與進步性，細蛾出申請。 縱使本發明已由上述之實施例詳細敘述而可由熟悉枯敗人士 匠思而為諸般鑛，然皆不脫如附申請專利範圍所欲保護者。 ^ ^ 【圖式簡單說明】 第1圖··其係揭示-習知CMP顧研磨賴示細。 第2圖··其係揭示其係揭示本案較佳實施例之一種附於^學機械研磨固定環 • 靖磨修整裝置。 第3圖：其係揭示第2圖之研磨修整裝置於應用時之示意圖。 第.其係揭示其係揭示本案另一較佳實施例之一種_匕學機械研磨固 定環(RetainingRing)之研磨修整裝置。 【主要元件符號說明】 11 ·平台 12 ··拋光墊 13 ··研磨漿輸配器 14:研§液 15 ·晶圓 16 ·晶圓夹具 17 :固定環 18 :鑽石碟 20 :固定夾具 21 :固定環 22 :修整器 23 :晶圓 24 :拋光墊 25 :拋光液 26 :旋轉平台 27 ··研磨漿輸配器 41 ： mm 411 :接觸環面 42 :修整單元 421 :修整面^^48S "^ According to another aspect of the case, this case also provides a polishing dressing for chemical surface grinding I, including: a retaining ring (RetainingRing) for embedding a wafer, The polishing pad is grounded; and a plurality of trimmers are disposed on the bottom surface of the fixing ring for performing the polishing on the same day to broadcast the polishing pad to maintain a good sharpness of the polishing. It is contemplated that the dresser is a Diamond Disk. The telhit concept 'where the fixed ring system is placed on top of a wafer fault. In order to achieve the above objective, one of the more general implementations of the present invention provides a polishing and dressing device for chemical mechanical polishing, comprising: a hybrid body for embedding a wafer, and a chemical polishing on a polishing pad. Wherein the hybrid body further has a contact ring surface disposed on the body to quantitatively maintain the polishing liquid on the bottom surface of the wafer, so as to prevent too little polishing liquid from flowing into the center of the bottom surface of the wafer to cause different wafers inside and outside the wafer; A repaired surface is disposed on the bottom surface. When the wafer is polished by a similar bond, the transfer pad is mixed to maintain a good throwing scale of the polishing pad. According to the above concept, wherein the trimming surface loop is provided at the periphery of the contact annulus. According to the above concept, the annular system is formed by a fixing. According to the above concept, the trimming surface is formed by a plurality of trimmers having an average ring disposed on the bottom surface of the retaining ring. "^ According to the above description, wherein the dresser is a Diamond Disk 〇 [Embodiment] Some typical embodiments of the features and advantages of the present invention will be described in detail in the following description. There should be various changes in different states, and they are not disregarded by the scope of the case. The description and the graphics are used for illustration purposes, not to limit the case. Referring to the first figure, it discloses a ring of the preferred embodiment of the present invention (Retainhg _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The chemical polishing is performed on the polishing pad; and the trimmer 22 is disposed on the bottom surface of the fixing ring 21 for the purpose of shaping the wafer to polish the same day to maintain the polishing pad. The rate of throwing. In practical applications, the plurality of trimmers 22 may be constructed of a plurality of drills. Of course, the retaining ring 21 is disposed on a wafer holder. To further clarify the structure of the invention in this case, please refer to Figure 3. It is a schematic diagram showing the application of the polishing apparatus of Fig. 2 in application. As shown in the figure, the fixing ring 21 is a part of a fixing fixture 20 for inserting a wafer 23 and chemically grinding the wafer 23 on a polishing pad 24, wherein the fixing ring One of the contact abutments formed in FIG. 21 is used to quantitatively maintain the bottom wire 25 of the wafer 23, and to avoid the polishing speed of the wafer 23 inside and outside the wafer at the center of the bottom surface of the wafer. On the other hand, the most important feature of the present invention is that a plurality of trimmers 22 are looped on the bottom surface of the fixing ring 21 to form a trimming unit of the trimming surface for performing the polishing of the wafer 23 simultaneously. The polishing pad 24 is trimmed with a finishing unit to maintain a good throwing rate after the polishing. When the polishing and dressing device of the present invention is actually subjected to chemical mechanical polishing, the polishing pad 24 is first fixed to a rotating platform 26, and while rotating, the polishing liquid 25 flowing down from the slurry distributing device 27 can be evenly distributed thereon. Above the polishing pad 24. On the other hand, the wafer 23 which is inserted through the fixing ring 21 is chemically ground by the polishing liquid 25 and the polishing pad 24 therebelow by the rotation and pressurization of the fixing jig 20. Of course, the most important thing is to repair the 9 1287485 device 22 which is arranged on the bottom surface of the fixing ring 21, and can simultaneously pressurize the cooling device 20 to maintain its good lobing to w. Therefore, the polishing and trimming structure of the present invention can be used to polish the polishing pad while maintaining the good throwing rate of the surface. Please refer to the fourth figure, which discloses the grinding and dressing device of the present invention, which is a _<1_^__ fixing ring (RetainingRing). a net donor 41 for embedding a wafer (please refer to the third figure at the same time) for performing chemical mechanical polishing on a polishing pad, wherein the annular body 41 further has a contact ring surface 411 disposed on The annular axial surface is used for quantitatively maintaining the throwing of the bottom surface of the wafer. 'After too few throwing wires flow into the center of the bottom surface of the wafer to cause different polishing speeds inside and outside the wafer; and a trimming surface 421 is disposed on the remaining body ^ In the face, the wafer is thrown & when the polishing pad is finished to maintain the polishing efficiency of the polishing pad. The trimming surface 421 may be composed of a plurality of diamond disks, and a trimming unit 42 of a special pattern is formed on the periphery of the contact ring surface 411. In the actual application, the pattern of the trimming unit 42 is not limited. In the embodiment, the trimming surface 421 formed by the trimming unit 42 is an annular surface, similar to the contact ring surface 411, so that when used, The pressure applied by the fixing fixture can be more evenly dispersed, and the CMP fixing ring can be prevented from being difficult to flow into the center of the wafer when the life is too long, and the polishing speed of the inside and outside of the wafer is different. The present invention provides a polishing and dressing device attached to a chemical mechanical polishing retaining ring (RetainingRing), which can achieve the purpose of effectively refinishing the polishing pad with the most compact structure. In this case, the specific dresser is fixed on the CMP's Retaining Ring, so that the polishing pad can be trimmed at the same time to maintain its good polishing efficiency. Moreover, it is effective to avoid the disadvantage that the Retaining Ring does not easily flow into the center of the wafer when the life is too long, resulting in different polishing speeds inside and outside the wafer, which cannot be achieved by conventional techniques. The technology of this case has practicality, 1287485 nature, novelty and progress, and the application of fine moths. Even though the present invention has been described in detail by the above-described embodiments, it can be considered as a general mine by those skilled in the art of ruin, and it is not intended to be protected by the scope of the patent application. ^ ^ [Simple description of the diagram] Fig. 1··································· Fig. 2 is a perspective view showing a preferred embodiment of the present invention attached to a mechanical grinding retaining ring. Fig. 3 is a schematic view showing the application of the polishing dressing device of Fig. 2 in application. The invention discloses a polishing dressing device for revealing a mechanical polishing fixing ring (RetainingRing) according to another preferred embodiment of the present invention. [Description of main components] 11 · Platform 12 · Polishing pad 13 · · Slurry distributor 14: Grinding liquid 15 · Wafer 16 · Wafer jig 17 : Retaining ring 18 : Diamond disc 20 : Fixing jig 21 : Fixed Ring 22: Dresser 23: Wafer 24: Polishing pad 25: Polishing liquid 26: Rotating table 27 · · Slurry distributor 41 : mm 411 : Contact annulus 42 : Dressing unit 421 : Finishing surface