1273939 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種奈米碳管為放電表面拋光之應用裝 置，特別是指一電體晶放電之電路系統，能精準的掌握微放 電加工時的能量控制，以達到奈米級的表面加工精度的一 種0 【先前技術】 自從19 9 0年初發現該奈米碳管後，遂引發全世界研究的 興趣，對該一維的新材料主要研究其結構、機械、熱性質及 電氣性質等；因此，無論是根據電腦數值模擬計箕分析或以 實驗來對單壁奈米碳管（single—wall carb⑽nanQtube& SWCNTs) ^^ ^ ^ f (.ulti-wall carbon nanotubes, MWCMTs)進行研究，皆得知其具有高剛性 '熱與電的良導體。 尤其，具有高的長寬比之特性，使其可產生大的電場加強效 果，以致使得在低電場的作用下，即可有電子場發射的特性。 然而，近來在精微放電加工的技術上有長足的發展，研 究者除了用蝕刻（etching)的方式或以線放電引導（Μα electric discharge gUide)的方式，將一以鎢為材質的工 具電極預先製成約2"m直徑的細棒來進行加工，如此加工 的精破度可全仰仗預製鎢電極尺寸的大小來控制。因此，這 在微成型加工技術上，無非是一大改革與創新。 但是，機械加工無非是成型與表面處理兩者程序，故， 1273939 在表面處理程序上勢必亦可引入此一槪 概心，例如：現行所使 用之硬碟中，用作記憶用途之鎳盤，其 丹便用車床加工後可得 平均表面粗糙度（Ra)為12〇nm，且其儲在六曰 窃 崎仔奋垔為80Gb 〇若想 k升其儲存容量為16〇Gb，則須使复芈於主 '、卞句表面粗糙度降至 〜7〇nm’因此’在目前所使用之車床加卫技術是達不到此 一目標的。 由此可見，上述習用之加工方式仍有諸多缺*，實非— 良善之設計者，而亟待加以改良。 本案發明人鑑於上述習用之加工方式所衍生的各項缺 點’乃亟思加以改良創新，並經多年苦心孤詣潛心研究後， 終於成功研發完成本件一種奈米碳管為放電表面拋光之應 用裝置，以達到可進行奈米級的表面拋光製程。 【發明内容】 本發明之主要㈣即在於提供—種奈米碳管為放電表面 拋光之應用裝置，其係為一電體晶放電之電路系統，而其此 一電路系統係能精準的掌握微放電加工時的能量控制，以達 到奈米級的表面加工精度。 本發明之次一目的即在於提供一種奈米碳管為放電表面 拋光之應用裝置，其係為一電體晶放電之電路系統，而其此 一電路系統係能精準的掌握微放電加工時的能量控制，以達 到奈米級的表面加工精度。 本發明之又一目的即在於提供一種奈米碳管為放電表面 1273939 拋光之應用裝置，係在適當的條 τ 田w朱件選擇下，生長在以銅（Cu) 為基材（matrix)的合金基板上夕夕 土攸上之多層壁奈米碳管確實可達 到微尺寸加工之要求，在加工的皆 貫驗中對於平面的材料包彳除 率可達30 nm/min的加工速度。 本發明之再一目的’係在於提供一種各多層壁奈米碳管 是根著於合金基板上’再藉由各多層壁奈米碳管具有一定的 強健性之放電表面拋光之應用裝置。 可達成上述發明目的之—種奈米碳f為放電表面抛光之 應用裝置’其具有一電體晶放電之電路系統，而其電路系統 具有，-m生器，係為-可產生方波的積體電路，並經 由一電晶體，控制外加之加工電壓之導通與斷路；一功率放 大器，係隔離訊號控制端與加工功率端，以防控制端之電路 在不確定的因t下受@ 工作冑，係具有—分別為陽極及 陰極的銅合金基板，且該陽極銅合金基板係為一固定欲加工 之工件，而該陰極銅合金基板之表面分佈根生一個（根）以 上的多層壁奈米碳管；一限流電阻，係可控制放電加工時各 多層壁奈米碳管尖端所須的電流量。 而藉由δ玄電路系統之訊號產生器，可控制放電加工時產 生方波的波型，以及控制放電加工時奈米碳管尖端所須的電 流量，可使該工具電極達到奈米級微細加工之用。 1273939 【實施方式】 請參閱圖一至圖+ 7?路一 v. , ^ 、，山 固 圃卞五所不，為本發明所提供之本發明奈 米碳管為放電表面拋光之應用裝 愚、用展置具系統係為一電體晶放 電之電路系統，而其電路系統具有·· 詋遽產生器1，係為一可產生方波的積體電路，於本 發明中該訊號產生器係為一型號SG3542的積體電路，並經 由一1RF 640之電晶體1 1，控制外加之加工電麼的導通與 斷路。 力率放大器2，係隔離控制端與功率端，以防控制端 之電路在不確定的因素下受損，而於本發明中該功率放大器 2係以一型號TLP250的功率放大器2。 一工作部3，係具有一分別為陽極及陰極的銅合金基板 3 1及3 2。且該陽極銅合金基板3 i係為一固定欲加工之 工件，而該陰極鋼合金基板3 2之表面係為一分佈根生一個 (根）以上的多層壁奈米碳管3 3。 一限流電阻4，係可控制放電加工時各多層壁奈米碳管 3 3尖端所須的電流量。 藉由，該電體晶放電之電路系統的訊號產生器i，玎控 制放電加工時產生方波的波型，如圖二所示，以及控制放電 加工時奈米碳管3 3尖端所須的電流量，可使本發明之奈米 石反皆3 3為放電表面拋光之應用裝置達到奈米級微加工之 1273939 用。 在本發明中係以該電體晶放電之電路系統，將被加工陽 極（未拋光的n-type Si wafer)，在三種不同的介電質中進 行加工測試，分別在10 —3torr的真空下、大氣中以及去離 子水（DI water)中實驗。進而得知在上述之條件下，該電體 晶放電之電路系統的加工效果。 首先是該陰極銅合金基板3 2之漏電流測試；因為，該 陰極銅合金基板3 2在成長多層壁奈米碳管3 3前，須使用 規格#1000號的砂紙磨光，造成其表面產生細小的到痕與尖 點，而在外加電場的作用很有可能在其上發生漏電流，如圖 三所示，為其場發射特性測試。 如上所述可得知該陰極銅合金基板3 2單獨在外加電 %的作用下’是有漏電流產生的。但，在外加1 Q 〇 〇 V的高電 壓下，所產生0.025 /z A/cin2的漏電流強度（ieakagecUr]fent density)，比起真正的奈米碳管之場發射電流密度，是小得 可以忽略的，但不可否認其存在。 如圖四所示，顯示該陰極銅合金基板3 2連同大面積成 長高準直度的各多層壁奈米碳管3 3之場發射特性測試。在 其外加電壓由〇〜l〇〇〇V的作用下，可發現起始電壓約2· 5V/ // m，此值小於以矽晶片（si wafer)為成長基板的起始電壓 值’亦小於同樣是以金屬基板（但非銅金屬）成長之多層壁奈 1273939 米碳管3 3電壓值。其原因是有雙重的因素作用產生的，其 一是銅成份導電性佳，所有外加電壓均可以在最小的能量損 失下’將所有的能董消耗皆用於各多層壁奈米碳管3 3末 端。其二是準直度高的多層壁奈米碳管3 3，其高的長寬比 效應更增加了強電場之效果。 除此，各多層壁奈米碳管3 3是根著於該陰極鋼合金基 板3 2上，故，各多層壁奈米碳管3 3必具有一定之強健 性，使得每個外加電壓的試驗皆可重覆多次且實驗數據的重 現性高。因此，實驗結束後，利用一掃瞄式電子顯微鏡（圖 中未示）的檢視下，於該陰極銅合金基板3 2上用以加工的 各夕層壁奈米奴管3 3，雖有小部份的消耗，但絕大部份仍 舊存在於該陰極銅合金基板3 2上，並未有重大的變化。唯 有在受鐵弗龍（Teflon)襯墊、強壓及磨擦下的區域中之多層 壁奈米碳管3 3，呈現整根傾倒，彼此相互堆疊的情況。但， 並未發現有在管身有折彎的現象，由此可看出多層壁奈米碳 管3 3高剛性的性質表現，如圖五所示。 再者，利用該電體晶放電之電路系統，如圖一所示，實 際執仃放電加工實驗；外加加工電壓選擇用6〇〇v，而在一反 應腔（reaction chamber)中壓力保持在1〇 —3 t〇rr(圖中未 示)’放電控制以選擇如圖二所示之方波，加工時間為難。 圖六及圖七所示 ，則是標$在加工的陽極鋼合金基板3 1273939 1上’同一點加工 舻矣面够〜 爰 父圖。明顯的原本存在表面的粗 糙表面變得平潛句^夕 _ηπ] σ夕H列加工前後平均粗糙度，相差約 的條件選心 ；料為。故，證明在適當 當成電極進行加 件選擇下’利用多層壁奈米碳管3 是可行。 另外/加工後在陰極銅合金基板3 2的各多層壁奈米碳 3丄騎吗式電子顯微鏡檢視，發現如圖八所示’顯示 加工後的各多層壁奈米 吕d d呈現出有四區不同的外貌 分佈。 其中，包含有： ⑴激發較大能量的電弧放電(arc ―代）將多層 壁奈米碳管（MWCNT)蒸散，但未執行表面抛光加工: 並且留下坑洞，如區域A 3 3 1 ( Area A )。 (2) 加工量大的區域B 3 3 2 (AREA b)。各多層壁奈 米碳管3 3由頂端往根部漸漸呈白化的現象，如圖 九所示。當情況嚴重時，多層壁奈米碳管3 3會從 陰極銅合金基板3 2上以蒸散的方式消失。但不同 於區域A 3 3 1 (Area A )。 ， (3) 區域C 3 3 3 Urea C)則是加工量較少的區域， 各多層壁奈米碳管3 3外形上則沒多大之改變，如 圖十所示。 1273939 (4)如圖十一所示，區域D 3 3 4 (Area D)為覆蓋在 鐵弗龍襯墊（Teflon spacer)底下未參與加工之多 層壁奈米碳管3 3，整根傾倒，彼此堆疊，未發現 有管身受折彎的現象。 ， 如圖十二所示，係以一微拉曼儀（Micro—Raman)，對加 工後的多層壁奈米碳管3 3作檢測，其結果發現隨著加工量 加大’無論是石墨峰（G-band )或是缺陷峰（D-band )的峰 高（peak )皆漸漸消失，這意味著，大能量的電流造成碳原 子間的電子軌域SP2結構被破壞，使整體的石墨結構由頂端 向下開始變質（即如圖九所示的白化現象），若從頂端到根部 完全變質時，則會從陰極銅合金基板3 2上消失。 在空氣中進行微放電加工（Micro-Electric Discharge1273939 IX. Description of the invention: [Technical field of the invention] The present invention relates to an application device for a surface cleaning of a carbon nanotube, in particular to an electric crystal discharge circuit system, which can accurately grasp the micro-discharge machining process. The energy control to achieve a nano-scale surface processing accuracy of a 0 [Prior Art] Since the discovery of the carbon nanotubes in early 1990, 遂 has sparked interest in research around the world, the main research on this one-dimensional new material Its structure, mechanical, thermal and electrical properties; therefore, whether it is based on computer numerical simulation analysis or experimentally single-walled carbon nanotubes (single-wall carb (10) nanQtube & SWCNTs) ^^ ^ ^ f (.ulti -wall carbon nanotubes, MWCMTs) were studied and found to have a high rigidity 'good conductor of heat and electricity. In particular, it has a high aspect ratio characteristic, which makes it possible to generate a large electric field enhancement effect, so that under the action of a low electric field, there is a characteristic of electron field emission. However, recently, there has been a great development in the technology of micro-discharge machining. In addition to etching or 线α electric discharge gUide, researchers have prefabricated a tool electrode made of tungsten. Approximately 2"m diameter thin rods are processed for processing, and the fineness of such processing can be controlled by the size of the preformed tungsten electrode. Therefore, this is nothing more than a major reform and innovation in micro-molding processing technology. However, machining is nothing more than a process of forming and surface treatment. Therefore, 1273939 is bound to introduce this aspect of the surface treatment procedure. For example, in the current hard disk used, it is used as a nickel disk for memory purposes. The average surface roughness (Ra) of the Dan can be obtained by lathe processing is 12〇nm, and it is stored at 6G, and it is stored at 6G. If you want to increase its storage capacity to 16〇Gb, you must make Resolving the main ', the surface roughness of the haiku dropped to ~7〇nm', so 'the lathe-adding technology currently used does not reach this goal. It can be seen that there are still many shortcomings in the above-mentioned conventional processing methods, which are not the best designers, but need to be improved. In view of the shortcomings derived from the above-mentioned conventional processing methods, the inventor of the present invention improved and innovated, and after years of painstaking research, finally succeeded in research and development of a nano-carbon tube for discharge surface polishing application device. A nano surface finish polishing process is achieved. SUMMARY OF THE INVENTION The main (4) of the present invention is to provide a nano-carbon tube for discharge surface polishing application device, which is an electrical crystal discharge circuit system, and the circuit system can accurately grasp the micro Energy control during electrical discharge machining to achieve nanometer surface finish accuracy. The second object of the present invention is to provide a nano-carbon tube for discharge surface polishing application device, which is an electric crystal discharge circuit system, and the circuit system can accurately grasp the micro-discharge machining process. Energy control to achieve nanometer surface finish accuracy. Another object of the present invention is to provide an application device for polishing a discharge surface of a carbonaceous surface 1273939, which is grown on a copper (Cu) substrate under the selection of a suitable strip. The multi-walled carbon nanotubes on the soil substrate on the alloy substrate can indeed meet the requirements of micro-size processing. In the process of processing, the processing rate of the planar material can reach 30 nm/min. A further object of the present invention is to provide an application apparatus for discharge surface polishing in which each of the multilayered wall carbon nanotubes is rooted on an alloy substrate and which has a certain robustness by each of the multilayered wall carbon nanotubes. The nanocarbon f which is the object of the above invention can be used for the discharge surface polishing application device, which has an electric crystal discharge circuit system, and the circuit system has a -m generator, which is - can generate a square wave Integrating the circuit and controlling the conduction and disconnection of the applied processing voltage via a transistor; a power amplifier is used to isolate the signal control terminal and the processing power terminal, so as to prevent the circuit of the control terminal from being operated by @determination factor The crucible has a copper alloy substrate which is an anode and a cathode, respectively, and the anode copper alloy substrate is a workpiece to be processed, and the surface of the cathode copper alloy substrate has a root layer of one (root) or more. A carbon tube; a current limiting resistor that controls the amount of current required at each tip of a multi-walled carbon nanotube during electrical discharge machining. By using the signal generator of the δ Xuan circuit system, the waveform of the square wave generated during the electric discharge machining can be controlled, and the amount of current required for the tip of the carbon nanotube during the electric discharge machining can be controlled, so that the electrode of the tool can reach the nanometer level. For processing. 1273939 [Embodiment] Please refer to Figure 1 to Figure + 7? Road 1 v. , ^ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The display device system is an electric crystal discharge circuit system, and the circuit system has a 詋遽 generator 1, which is an integrated circuit capable of generating a square wave. In the present invention, the signal generator is The integrated circuit of a model SG3542, and through the transistor 11 of a 1RF 640, controls the conduction and disconnection of the applied processing power. The power amplifier 2 is an isolated control terminal and a power terminal to prevent the circuit of the control terminal from being damaged by an uncertain factor. In the present invention, the power amplifier 2 is a power amplifier 2 of a type TLP250. A working portion 3 has copper alloy substrates 3 1 and 3 2 which are respectively an anode and a cathode. The anode copper alloy substrate 3 i is a workpiece to be processed, and the surface of the cathode steel alloy substrate 3 2 is a multi-layered wall carbon nanotube 3 3 having a distribution of one or more roots. A current limiting resistor 4 controls the amount of current required at the tip of each of the multilayered carbon nanotubes 3 3 during electrical discharge machining. By means of the signal generator i of the circuit of the electric crystal discharge, the mode of the square wave generated during the electric discharge machining is controlled, as shown in FIG. 2, and the control of the tip of the carbon nanotube 3 3 during the electric discharge machining is required. The electric current can make the nano stone of the present invention 3 3 for the application of the discharge surface polishing to reach the nano-scale micro-processing 1273939. In the present invention, the circuit of the electric crystal discharge is used, and the processed anode (unpolished n-type Si wafer) is processed and tested in three different dielectric materials under vacuum of 10 -3 torr. Experiment in the atmosphere and in DI water. Further, the processing effect of the circuit system of the electric crystal discharge under the above conditions is known. First, the leakage current test of the cathode copper alloy substrate 32; because the cathode copper alloy substrate 3 2 is polished with a sandpaper of size #1000 before the growth of the multilayered wall carbon nanotubes 3 3, the surface is generated. Small to traces and sharp points, and the effect of the applied electric field is likely to cause leakage current on it, as shown in Figure 3, for its field emission characteristics test. As described above, it can be known that the cathode copper alloy substrate 32 is caused by leakage current alone under the action of the applied electric power. However, at a high voltage of 1 Q 〇〇V, the leakage current intensity (ieakagecUr]fent density of 0.025 /z A/cin2 is small compared to the field emission current density of a true carbon nanotube. Can be ignored, but there is no denying its existence. As shown in Fig. 4, a field emission characteristic test of the cathode copper alloy substrate 3 2 together with each of the multilayered wall carbon nanotubes 3 having a large area and a high degree of collimation is shown. Under the action of the applied voltage from 〇~l〇〇〇V, the initial voltage can be found to be about 2.5 V / // m, which is smaller than the initial voltage value of the silicon wafer as the growth substrate. Less than the voltage value of the multi-layer wall 1273939 m carbon tube 3 3 which is also grown on a metal substrate (but not copper metal). The reason is that there are two factors, one of which is that the copper component has good conductivity, and all applied voltages can be used for each multi-layered wall carbon nanotube 3 3 under the minimum energy loss. End. The second is the multi-layered wall carbon nanotubes 3 3 with high degree of collimation, and the high aspect ratio effect increases the effect of the strong electric field. In addition, each of the multi-layered wall carbon nanotubes 3 3 is rooted on the cathode steel alloy substrate 32, so each of the multi-layered wall carbon nanotubes 3 3 must have a certain degree of robustness, so that each applied voltage is tested. Both can be repeated many times and the experimental data is highly reproducible. Therefore, after the end of the experiment, the inner layer of the nanotubes 3 3 processed on the cathode copper alloy substrate 3 2 was examined by a scanning electron microscope (not shown). The consumption of the portion, but most of it still exists on the cathode copper alloy substrate 32, and there is no significant change. Only the multi-walled carbon nanotubes 3 3 in the area under the Teflon liner, strong pressure and friction are in the form of a whole dump and stacked on each other. However, it has not been found that there is a bend in the pipe body, and thus the high rigidity property of the multilayered wall carbon nanotubes 3 3 can be seen, as shown in Fig. 5. Furthermore, using the electric crystal discharge circuit system, as shown in FIG. 1, the actual discharge machining experiment is performed; the processing voltage is selected to be 6 〇〇v, and the pressure is maintained at 1 in a reaction chamber. 〇—3 t〇rr (not shown) 'discharge control to select the square wave as shown in Figure 2, the processing time is difficult. Figure 6 and Figure 7 show that the mark is processed at the same point on the processed anode steel alloy substrate 3 1273939 1 . Obviously, the rough surface of the surface has become a flat-slung sentence. The average roughness of the σ H H column before and after processing, the difference between the conditions of the selection; Therefore, it has been proved that it is feasible to use the multi-layered wall carbon nanotubes 3 under appropriate selection of electrodes. In addition, after processing, each of the multi-walled nanocarbons of the cathode copper alloy substrate 3 2 was examined by electron microscopy, and it was found that the multi-walled nanorams dd after processing showed four regions. Different appearance distribution. Among them, it includes: (1) Arc discharge that excites larger energy (arc-generation) evades multi-walled carbon nanotubes (MWCNT), but does not perform surface polishing: and leaves potholes, such as area A 3 3 1 ( Area A). (2) Area B 3 3 2 (AREA b) with a large amount of processing. Each of the multi-walled carbon nanotubes 3 3 is gradually whitened from the top to the root, as shown in FIG. When the situation is severe, the multi-walled carbon nanotubes 3 3 will disappear from the cathode copper alloy substrate 32 in an evapotranspiration manner. But different from the area A 3 3 1 (Area A ). (3) Area C 3 3 3 Urea C) is a region with a small amount of processing, and the shape of each of the multi-walled carbon nanotubes 3 3 does not change much, as shown in FIG. 1273939 (4) As shown in Figure 11, the area D 3 3 4 (Area D) is a multi-layered wall carbon nanotube 3 3 that is not covered under the Teflon spacer. Stacked on each other, no tube body was found to be bent. As shown in Fig. 12, the processed multi-walled carbon nanotubes 3 3 were tested by a micro-Raman instrument, and it was found that the amount of processing increased with the amount of graphite. (G-band) or the peak height of the defect peak (D-band) gradually disappears, which means that the large energy current causes the SP2 structure of the electronic orbital domain between the carbon atoms to be destroyed, so that the overall graphite structure The deterioration from the top end (i.e., the whitening phenomenon as shown in Fig. 9) disappears from the cathode copper alloy substrate 32 when it is completely deteriorated from the top end to the root portion. Micro-Electric Discharge in the air
Mechining)之測試時發現，由於濕空氣的影響，使得在小的 外加電壓下，多層壁奈米碳管3 3所產生散發電流，不易使 濕空氣解離進而產生電弧放電（arc discharge)來進行加 工。但若一味的增加外加電壓，則易形成如圖八所示區域A 3 3 1的情形，而大電流產生大的電弧放電（arc discharge) ’使得該陰極銅合金基板3 2連同各多層壁奈米 碳管3 3 ’因大爆炸而蒸散掉。這樣就失去了以多層壁奈米 碳管3 3作微細加工的意義。 但，這在技術上，仍然是有改善空間的。如： 12 1273939 (1)在較乾燥的空氣中加工。 )再減少鐵弗龍襯墊（spacer)的隔絕距離（少於I% β m)。 (3)更精密的控制電路中之電流大小等。 白可達到在大氣中，以多層壁奈米碳管3 3執行放電加 工之效果。這樣，不但提升了微表面加工的精度，更節省了 大量的加工成本。 而如圖十三則顯示，在空氣中經電弧放電（ discharge)後，受爆炸氣壓風爆的影響，原本筆直度高的 多層壁奈米碳管3 3，呈現如被颱風肆虐後的外貌，雖然雜 亂，但隱約可看出如圖十三所示的情形，即以多層壁奈米碳 管3 3為爆炸中心向四方傾倒，或呈螺旋狀傾倒的情況。 而如圖十四及圖十五所示，則顯示在去離子水（Μ water)中，進行微放電加工（Micr〇 Electric 打狀Mechining) found that due to the influence of the humid air, the small-walled carbon nanotubes 3 3 generate a discharge current at a small applied voltage, which is not easy to dissociate the humid air and generate an arc discharge for processing. . However, if the applied voltage is simply increased, it is easy to form the region A 3 3 1 as shown in FIG. 8, and the large current generates a large arc discharge, which causes the cathode copper alloy substrate 3 2 together with each multilayer wall. The carbon tube 3 3 'steamed off due to the big bang. This loses the significance of microfabrication with multi-layered wall carbon nanotubes 3 3 . However, this is technically still there is room for improvement. Such as: 12 1273939 (1) Processing in drier air. ) Reduce the isolation distance (less than I% β m) of the Teflon liner. (3) The magnitude of the current in the more precise control circuit. White can achieve the effect of performing discharge processing in the atmosphere with multi-layered wall carbon nanotubes 3 3 . This not only improves the precision of micro surface machining, but also saves a lot of processing costs. As shown in Figure 13, after the arc discharge in the air, the multi-walled carbon nanotubes 3 3 with high straightness are affected by the typhoon. Although it is cluttered, it can be seen that the situation shown in Fig. 13 is that the multi-walled carbon nanotubes 3 3 are dumped to the square in the center of the explosion, or are spirally dumped. As shown in Figure 14 and Figure 15, it is shown in the deionized water (Μ water), micro-discharge processing (Micr〇 Electric
Mechining)的測試結果。由於在產生電弧放電時，去離子水 (DI water)爆炸後的液壓流動，牵引週圍的液體產生旋渦， 造成各多層壁奈米碳管3 3受其帶動，最後使得各多層壁奈 米石反營3 3之頂端因旋渴的擾動而結合在一起。 綜上所述，本發明之電體晶放電之電路系統，能精準的 掌握微放電加工時的能量控制，以達到奈米級的表面加工精 度；且在奈米級在微細化加工電極的成果中，利用多層壁奈 1273939 ， / 米碳管3 3為：ϋ具電極，進行奈米級微細放電加工測試。由 上述之實驗證明，在適當的條件選擇下，生長在以銅為基# 的陰極銅口金基3 2板上之各多層壁奈米碳管3 3確實可 達到奈米級微細尺寸加工之要求，並在加工的實驗中對於平 面的材料剖除率可達3〇nm/miri的加工速度。 另外，由上述實驗中更觀察到各多層壁奈米碳管3 3在 不同的；I電夤（dielectric)中執行加工時，有不同的行為模 ^ ° · 上列詳細說明係針對本發明之一可行實施例之具體說 明，惟該實施例並非用以限制本發明之專利範圍，凡未脫離 本發明技藝精神所為之等效實施或變更，均應包含於本案之 專利範圍中。 上述之創作不但在技術思想上確屬創新，並能較習用物 〇口 i曰進上述夕項功效，應已充分符合新穎性及進步性之法定 發明專利要件，爰依法提出申請，懇冑貴局核准本件發明 籲 專利申請案，以勵發明，至感德便。 【圖式簡單說明】 請參閱以下有關本發明一較佳實施例之詳細說明及其附 圖，將可進一步瞭解本發明之技術内容及其目的功效；有關 該實施例之附圖為： 圖為本發明奈米碳管為放電表面拋光之應用裝置的電 14 1273939 ' 體晶放電之電路系統電路示意圖； 圖一為本發明奈米碳管為放電表面拋光之應用裝置的電 體晶放電之電路系統的時序圖； 圖二為本發明奈米碳管為放電表面拋光之應用裝置其銅 合金基板於未成長奈米碳管前之漏電流測試的電壓—電流曲 線圖， 圖四為本發明奈米碳管為放電表面拋光之應用裝置成長 在銅合金基板上的奈米碳管之場發射特性電壓—電流曲線 籲 rrn · 圍， 圖五為本發明奈米碳管為放電表面拋光之應用裝置的各 多層壁奈米碳管於電子顯微鏡下所顯示之示意圖； 圖六為本發明奈米碳管為放電表面拋光之應用裝置的微 放電加工處理表面之加工前電子顯微鏡各區間的放大顯視 圃， 圖七為本發明奈米碳管為放電表面拋光之應用裝置在放 毫 電加工後之電子顯微鏡各區間的放大顯視圖； 圖八為本發明奈米碳管為放電表面拋光之應用裝置在放 電加工後之電子顯微鏡各區間的放大顯視圖； 圖九為本發明奈米碳管為放電表面拋光之應用裝置在放 電加工後，各多層壁奈米碳管之電子顯微鏡第一放大分佈顯 示圖； 15 1273939 圖十為本發明奈米碳管為放電表面拋光之應用裝置在放 電加工後，纟多層I奈米石炭管之電子顯微鏡第二放大分佈顯 示圖； 圖十一為本發明奈米碳管為放電表面拋光之應用裝置在 放電加工後’各多層壁奈米碳管之電子顯微鏡第三放大分佈 顯示圖； 圖十二為本發明奈米碳管為放電表面拋光之摩用裝置， 其多層壁奈米碳管在放電加工後’各多層壁奈米碳管之微拉 曼光譜圖電； 圖十三為本發明奈米碳管為放電表面拋光之應用裝置， 其多層壁奈米碳管在低外加電壓下，以大氣為介 電質經微放 電加工後之電子顯微鏡放大顯示圖； 圖十四為本發明奈米碳管為放電表面拋光之應用裝置， 其多層壁奈米碳管在低外加電壓下，以去離子水經微放電加 工後之電子顯微鏡顯示圖；以及 圖十五為本發明奈米碳管為放電表面拋光之應用裝置在 低外加電壓下，以去離子水經微放電加工後之電子顯微鏡放 大顯示圖。 【主要元件符號說明】 1訊號產生器 1 1電晶體 16 1273939 2功率放大器 3工作部Mechining) test results. Due to the hydraulic flow after the explosion of DI water in the arcing, the liquid around the traction is vortexed, causing the multi-walled carbon nanotubes 3 3 to be driven by them, and finally the multi-wall nano-crystals are reversed. The top of Camp 3 3 is combined by the thirst disturbance. In summary, the circuit system of the electric crystal discharge of the present invention can accurately grasp the energy control during micro-discharge machining to achieve the surface processing precision of the nanometer level; and the result of processing the electrode at the nanometer level in the micronization process In the middle, the multi-layer wall nana 1273939, / m carbon tube 3 3 is used: the cooker electrode, and the nano-scale micro-discharge machining test is performed. It is proved by the above experiments that under the appropriate conditions, each of the multi-layered wall carbon nanotubes 3 3 grown on the copper-based copper-based 3 2 plate of the copper-based #2 can indeed meet the requirements of nano-scale processing. And in the processing experiment, the material removal rate for the plane can reach the processing speed of 3〇nm/miri. In addition, it is further observed from the above experiments that each of the multi-layered wall carbon nanotubes 3 3 has different behavioral modes when performing processing in different; I electric electricity. The above detailed description is directed to the present invention. The detailed description of the present invention is not intended to limit the scope of the invention, and the equivalents of the invention are intended to be included in the scope of the invention. The above-mentioned creations are not only innovative in terms of technical ideas, but also able to meet the requirements of the above-mentioned items in the past, and should fully comply with the statutory invention patents of novelty and progress, and apply for it according to law. The bureau approved this invention to appeal for a patent application, in order to invent invention, to the sense of virtue. BRIEF DESCRIPTION OF THE DRAWINGS The following is a detailed description of a preferred embodiment of the present invention and its accompanying drawings, which will further explain the technical contents of the present invention and the purpose of the present invention. The carbon nanotube of the present invention is a circuit diagram of the circuit system of the electric discharge of the electric discharge surface of the application device of the discharge surface polishing apparatus; FIG. 1 is a circuit of the electric crystal discharge of the application device of the carbon nanotube for discharge surface polishing according to the present invention; The timing diagram of the system; Figure 2 is a voltage-current graph of the leakage current test of the copper alloy substrate before the growth of the carbon nanotube substrate in the application device for the discharge surface polishing of the present invention, and FIG. The carbon nanotubes are used for discharge surface polishing. The field emission characteristics of the carbon nanotubes grown on the copper alloy substrate are voltage-current curves. The fifth embodiment of the present invention is a device for discharge surface polishing of the carbon nanotubes of the present invention. Schematic diagram of each multi-layered wall carbon nanotube under the electron microscope; Figure 6 is a micro-discharge of the application device of the carbon nanotube for discharge surface polishing of the present invention The magnifying view of each section of the electron microscope before processing is processed, and FIG. 7 is an enlarged view of each section of the electron microscope after the electroforming process of the application device of the carbon nanotube for discharge surface polishing according to the present invention; The present invention is an enlarged view of various sections of an electron microscope after discharge machining of the application device for discharge surface polishing of the present invention; FIG. 9 is an application device of the carbon nanotube for discharge surface polishing of the present invention, after electrical discharge machining, Multi-walled carbon nanotubes electron microscopy first enlarged distribution display; 15 1273939 Figure 10 is the application of the carbon nanotubes for discharge surface polishing in the invention, after electrical discharge machining, 纟 multilayer I nanocarboniferous electron microscopy 2 is a magnified distribution display diagram; FIG. 11 is a third enlarged distribution display diagram of an electron microscope of each multi-layered wall carbon nanotube after the electric discharge machining of the application device of the carbon nanotube for discharge surface polishing; The invention discloses a carbon nanotube for discharge surface polishing, and the multi-layered wall carbon nanotubes of the multi-layered wall carbon nanotubes are micro-pulsed by each of the multi-layered wall carbon nanotubes after electrical discharge machining. Figure III shows the application device of the carbon nanotubes for discharge surface polishing of the present invention, and the electron microscopy of the multilayered carbon nanotubes under the low applied voltage and the atmosphere as the dielectric after micro-discharge processing Figure 14 is an application device of the carbon nanotube of the present invention for discharge surface polishing, and the multi-layered wall carbon nanotube is displayed by electron microscopy of deionized water after micro-discharge processing under low applied voltage; And FIG. 15 is an enlarged view of an electron microscope of the application device of the present invention for discharge surface polishing at a low applied voltage and after micro-discharge processing of deionized water. [Main component symbol description] 1 signal generator 1 1 transistor 16 1273939 2 power amplifier 3 working unit
31陽極銅合金基板 3 2陰極銅合金基板 3 3奈米碳管 3 3 1區域A 3 3 2區域B 3 3 3區域C 3 3 4區域D 4限流電阻31 anode copper alloy substrate 3 2 cathode copper alloy substrate 3 3 carbon nanotubes 3 3 1 region A 3 3 2 region B 3 3 3 region C 3 3 4 region D 4 current limiting resistor