TWI254955B - Wiring board, method for manufacturing wiring board and electronic component using wiring board - Google Patents
Wiring board, method for manufacturing wiring board and electronic component using wiring board Download PDFInfo
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- TWI254955B TWI254955B TW092101292A TW92101292A TWI254955B TW I254955 B TWI254955 B TW I254955B TW 092101292 A TW092101292 A TW 092101292A TW 92101292 A TW92101292 A TW 92101292A TW I254955 B TWI254955 B TW I254955B
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- insulating substrate
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- external terminal
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/403—Edge contacts; Windows or holes in the substrate having plural connections on the walls thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
- H05K2201/0305—Solder used for other purposes than connections between PCB or components, e.g. for filling vias or for programmable patterns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0388—Other aspects of conductors
- H05K2201/0394—Conductor crossing over a hole in the substrate or a gap between two separate substrate parts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0733—Method for plating stud vias, i.e. massive vias formed by plating the bottom of a hole without plating on the walls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
- H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4069—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in organic insulating substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Ϊ254955Ϊ254955
五、發明說明(j) 、【發明所屬之技術領域】 本發明係有關於配線基祐、 用此配線基板之電子雯株 配線基板之製造方法及使 器、電阻體、線g ^ 尤其係有關於使得固態電容 化之配線義把 Ϊ 晶體等被動元件可小型化、薄型 電子零件。 < 衣仏方法及使用此配線基板之 一、【先前技術】V. EMBODIMENT OF THE INVENTION (J) The technical field of the invention is related to the wiring method, the manufacturing method of the electronic wiring board using the wiring board, and the actuator, the resistor, and the line g ^ The wiring for solid-state capacitance can be used for miniaturization and thin electronic parts such as passive components such as crystals. < Clothing method and use of the wiring substrate, [Prior Art]
Processing Una) 電容器使用晶片狀:以容;或:阻等被動元件,在該 容器元件例如有知m :兀牛之电子零件。晶片狀之電 -質固態電解;件。 純度之鈕粉末燒姓:夕件係將在咼溫、高真空中由高 性液中以電化;::成之f孔質燒結體作為陽極,將在酸 如由二氧化錳“ :::J :為電介質。又陰極例 層、炭層以及銀層構成^刀子4包阻值小之固態電解質 面積件因,孔質之陽極,電極 態電解質’交流特性佳,可靠::1:…因陰極係固 元件之晶片型電容器;用=手; :“盗或筆記型電腦等攜帶型電子機通 化、高頻:高耗電流之電子機器之;;;i:型化、薄 又,该晶片型電交哭 的γ件 时彺係將該鈕質固態電解電容器Processing Una) The capacitor is in the form of a wafer: a capacitor; or a passive component such as a resistor, in which the component of the container is known as an electronic component of the yak. Wafer-like electro-solid state electrolysis; The purity of the button powder burned surname: the eve piece will be electrified from the high liquid in the temperature and high vacuum;:: the f-porous sintered body becomes the anode, and will be in the acid such as manganese dioxide. ::: J: It is a dielectric. The cathode layer, the carbon layer and the silver layer constitute a solid electrolyte area with a small resistance of 4 knives. The anode of the pores and the electrolyte of the electrode state have good AC characteristics. Reliable: 1:... Chip-type capacitors for securing components; use = hand; : "Mobile electronic devices such as pirates or notebook computers, high-frequency: high-current-consuming electronic devices;;; i: type, thin, and When the electric wavy γ piece is used, the button type solid electrolytic capacitor
第6頁 1254955 (2)~Β ---^— 之2和導線架連接後用樹脂將該妲質固態電解電容器元件 σ圍密封而形成,但是近年來因電子機器小型化、薄型 =’使靜電電容相對於外形尺寸大變得困難。因而,提議 相。在特開平8 —1 48386號公報或特開平2〇〇1_3〇 7946號公 所σ己載之未使用導線架之晶片型電容器。 f^在扣開平8 — 1 4 8 3 8 6號公報所記載之晶片型電容器如圖 a所不,具有電容器元件3,由陽極3〇1、陰極3〇2以及 搞^處3〇 3構成;第一支撐部1B,支撐該電容器元件3之陽 ^ 1,以及第二支撐部1C,支撐該陰極302 ;而且由以下 之構件構成,絕緣基板1,在各支撐部丨β、〗c具有各自利 用導電構件11、12和陽極3〇1及陰極3〇2在電氣上連接之第 二外部電極9和第二外部電極10 ;及外殼13,被覆包含由 该絕緣基板1支撐之電容器元件3之主要部。 一叩又,在特開平2〇〇 1 -30 7946號公報所記載之晶片型電 谷态如圖6 (b)所示,使用設置了凹部丨4和段部丨5之立體型 配線板。該段部1 5由絕緣基板1及在絕緣基板丨之雙面疊層 =樹脂23、25形成。該凹部14係裝載電容器元件3之部曰 分。在該段部1 5之上面設置陽極用導電體丨6,和該陽極用 導電體1 6對應的在該立體型配線板之背面設置陽極端子 17。又,在凹部14之底面設置陰極用導體層18,和該陰極 用尊體層1 8對應的在該立體型配線板之背面設置陰極端子 19。此時,經由設於連接孔24之導體2〇連接該陽極用導電 體16和陽極端子17,'經由連接孔27連接該陰極用導體層18 和陰極端子19。此外,符號26係充填於連接孔24中之&Page 61254955 (2)~Β ---^— 2 is formed by sealing the tantalum solid electrolytic capacitor element with a resin after the lead frame is connected, but in recent years, the electronic device has been miniaturized and thin type= It is difficult for the electrostatic capacitance to be large with respect to the external dimensions. Therefore, the proposal phase. A wafer type capacitor which is not used in a lead frame is disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. The wafer type capacitor described in the Japanese Patent Publication No. 8 - 1 4 8 3 8 6 has a capacitor element 3 and is composed of an anode 3〇1, a cathode 3〇2, and a 3〇3. a first support portion 1B supporting the anode 1 of the capacitor element 3 and the second support portion 1C supporting the cathode 302; and being composed of the following members, the insulating substrate 1 having the support portions 丨β, 〖c The second external electrode 9 and the second external electrode 10, which are electrically connected by the conductive members 11, 12 and the anode 3〇1 and the cathode 3〇2, respectively; and the outer casing 13 are covered with the capacitor element 3 supported by the insulating substrate 1. The main part. As shown in Fig. 6(b), a three-dimensional wiring board provided with a recessed portion 和4 and a segment portion 丨5 is used as shown in Fig. 6(b). The segment portion 15 is formed of an insulating substrate 1 and a double-sided lamination on the insulating substrate = = resins 23, 25. The recess 14 is loaded with a portion of the capacitor element 3. An anode conductor 6 is provided on the upper surface of the segment portion 15, and an anode terminal 17 is provided on the back surface of the three-dimensional wiring board corresponding to the anode conductor 16. Further, a cathode conductor layer 18 is provided on the bottom surface of the concave portion 14, and a cathode terminal 19 is provided on the back surface of the three-dimensional wiring board corresponding to the cathode noble layer 18. At this time, the anode conductor 16 and the anode terminal 17 are connected via the conductor 2 provided in the connection hole 24, and the cathode conductor layer 18 and the cathode terminal 19 are connected via the connection hole 27. In addition, the symbol 26 is filled in the connection hole 24 &
1254955 五、發明說明(3) 月旨〇 又此時’將該電容哭壯 放置於段部15後陽極用^ 衣载於凹部14,將陽極3〇1 導雷性為接兩U β 4 A 電體1 6連接。又,陰極3 Ο 2經由 ¥電/·生黏接劍4Β和陰極用導體層18連接。 田 三、【發明内容】 發明要解決之課題 在絕:ί板ΪΓ:技:連片型電容器之配線基板 設置外部電極(外部端3接器元件1之背侧面上 陽極及陰極如圖( 机 而 U)及圖6(b)所示,經由在该絕緣基板所 口又置貝牙孔之内部所設置之導體連接。 參牛ϋ絕ΐ基板所設置之貫穿孔形成導體之方法上有電 、:J 入V電性樹脂之方法,但是由於近年來晶片型電 埋 ^里化"亥貝穿孔之孔徑變小,難在該貫穿孔之内部 ^導體。因而,在將導體埋入該貫穿孔之内部時因充 不良,有易發生導電不良之問題。 、 又’因在該貫穿孔之内部之導體易發生導電不良,將 =配線基板小型化更難,有該晶片型電容器難小型化之問 又’3在特開平8-1 48386號公報所記·載之晶片型電容 j ’因陽極301側之貫穿孔11A和陰極302侧之貫穿孔12A之 /木度不同’具有在該貫穿孔1 1 A、1 2 A之内部形成導電構件 11、1 2之製程難之問題。 第8頁 1254955 五、發明說明(4) m心如4特開平8,8386號公報或特開平2〇。卜 就A報所記載之晶片型電容器之 €谷器元件之陽極和該絕緣基板 二::為了連接該 =基板必須形成段差㉝,在該晶用;在該 基板之製程數變多,具有製造費用上漲吏用之配線 因此,本發明之目的在於提供— 、 接電容器元件之晶片型電容器等被動元::基板’使得連 化之配線基板。 ^件可小型化、薄型 本發明之別的目的在於提供一種 接電容器元件之晶片型 $基板,因形成連 造。 W 4被動兀件,可容易的製 ^發明之另外之目的在於提供一 連接電容器元件之晶片型電 f配線基板,因形成 變少,降低製造費用。 W、被動l件,可使製程數 币本發明之另外之目的在於提供— 电阻或線圈等被動元件之電子雯電子零件,使裝载 製造費用,使得可小型化、薄^ :之衣程數變少,可降低 解決課題之方式 —(1)本發明為達成上述之 猎著組裝被動元件形成 9 k供一種配線基板, 板,具有既定之圖案之門口 Y牛 /、特欲為具有絕緣基 定之圖案形成;以及外二二;,線,在該絕緣基板上以既 連接,在形成該配線:°卩充填該開口’和該配線 之该絕緣基板之反面以。 第9頁 1254955 五、發明說明(5) 。安务依據该手段(1 )’藉著在該絕緣基板埋設在形成該 1 =部之面之背面露出之外部端子部,未如在以往之晶片 ^容器使用之配線基板般在該絕緣基板之雙面形成配線 二木也可。因而,該配線基板可薄型化,可將使用該配線 暴板之電子裝置薄型化。 曰^因4外部端子部埋設於絕緣基板5不必如在以往 :型電容器使用之配線基板般設置孔徑小之貫穿孔, 將該外部端子部Γ姑 因不需要孔径小&貝牙孔,而且 端子1 m σ 圖案部直接連接,該圖案部和該外部 知子”導通不良,因❿,該配線基板容易小型化。 ,為了防止零件之電氣特性變化,&从…—— 该外部端子部使 鎳、金、銀、 用電阻值低之全屬砧i〜电乳特性變化, 錫之其中料較好’尤其使用銅、 又ΐ要ΐ這些材料之合金較好。 使用導電性樹:ϊ:J件之電氣特性’該外部端子部也可 情況,因電阻值比金屬材料。在使用該導電性樹脂之 脹係數之差小,該^,屬材料高,或和該絕緣基板之熱膨 又,在該外部端,子邛和该絕緣膜難發生剝離。 片塑電容器裝在組裝,之露出面一般常設置用以將該晶 黏接劑上,顧慮環境之焊錫黏接劑。此時,在該焊錫 設置錫、錫銀合金、錕=二使用不含鉛之材料較好,尤其 中一種之電鍍膜較好。、’5 β金、錫鉍合金、錫鋅合金之其 又,該絕緣基柄 有多個,為了—起形該電子零件之零件形成區域 成多個電子零件後切斷該絕緣基板而1254955 V. INSTRUCTIONS (3) At this time, the capacitor is placed in the section 15 and the anode is placed in the recess 14 to guide the anode 3〇1 to the two U β 4 A. The electrical body 16 is connected. Further, the cathode 3 Ο 2 is connected to the cathode conductor layer 18 via a battery. Tian San, [Invention] The subject to be solved by the invention is: ΪΓ plate: technology: the wiring substrate of the contiguous capacitor is provided with an external electrode (the anode and the cathode on the back side of the external terminal 3 connector element 1) And U) and FIG. 6(b) are connected by a conductor provided inside the beating hole of the insulating substrate. The method of forming a conductor by the through hole provided in the substrate of the burdock is electrically charged. , J: The method of entering the V-electric resin, but in recent years, the wafer-type electro-embedded "Heibei perforation has a smaller aperture, and it is difficult to be inside the through-hole. Therefore, the conductor is buried in the conductor. When the inside of the through hole is poorly filled, there is a problem that electrical conduction is liable to occur. Further, it is difficult to reduce the size of the wiring board because the conductor inside the through hole is liable to cause electrical conduction defects, and the chip type capacitor is difficult to be small. In the above-mentioned Japanese Patent Application Laid-Open No. Hei 8-1 48386, the chip type capacitor j' is different from the through hole 11A on the anode 301 side and the through hole 12A on the cathode 302 side. The conductive member 11 is formed inside the through holes 1 1 A, 1 2 A The problem of the process of 1 2 is difficult. Page 8 1254955 V. Invention description (4) M heart is as special as 4, 8386, or special opening 2 〇. The anode of the device element and the insulating substrate 2: In order to connect the substrate, a step 33 must be formed for the crystal; the number of processes in the substrate is increased, and the wiring having a high manufacturing cost is used. Therefore, the object of the present invention is A passive element such as a chip type capacitor that is connected to a capacitor element: a substrate "a wiring board that is connected". The device can be miniaturized and thin. Another object of the present invention is to provide a chip type substrate for a capacitor element. W 4 passive components can be easily fabricated. Another object of the invention is to provide a wafer-type electrical f-wiring substrate to which capacitor elements are connected, which reduces manufacturing costs due to less formation. Another object of the present invention is to provide an electronic electronic component of a passive component such as a resistor or a coil, so that the manufacturing cost can be reduced, and the number of garments can be reduced. The method for solving the problem can be reduced. (1) The present invention forms a wiring substrate for forming a passive component by the above-mentioned hunting, and the board has a predetermined pattern of gates Y, and is intended to have an insulating pattern. And a second wire; the wire is connected to the insulating substrate, and the wiring is formed: the opening is filled with the opening and the wiring is on the opposite side of the insulating substrate. Page 9 1254955 5. Description of the invention 5) The service is based on the means (1) 'the external terminal portion exposed on the back surface of the surface on which the 1 = portion is embedded in the insulating substrate, and is not as in the wiring board used in the conventional wafer container It is also possible to form the wiring two wood on both sides of the insulating substrate. Therefore, the wiring board can be made thinner, and the electronic device using the wiring board can be made thinner. In the case where the external terminal portion is embedded in the insulating substrate 5, it is not necessary to provide a through hole having a small aperture as in the conventional wiring board used for the capacitor, and the external terminal portion does not require a small aperture & The terminal portion 1 m σ is directly connected to the pattern portion, and the pattern portion and the external electron "" are poorly connected. Therefore, the wiring board is easily miniaturized. In order to prevent the electrical characteristics of the component from changing, the external terminal portion is made. Nickel, gold, silver, the low resistance value of all the anvil i ~ electric milk characteristics change, the tin material is better 'especially the use of copper, but also the alloy of these materials is better. Use conductive tree: ϊ : Electrical characteristics of the J piece 'The external terminal portion may also be used, because the resistance value is greater than the metal material. The difference in the expansion coefficient of the conductive resin is small, the material is high, or the thermal expansion of the insulating substrate Moreover, at the outer end, the sub-tank and the insulating film are hard to be peeled off. The chip-shaped capacitor is mounted on the exposed surface, and the exposed surface is usually provided with a solder adhesive for the crystal bonding agent, which is an environmental concern. In the solder set Tin, tin-silver alloy, bismuth=two use lead-free materials are better, especially one of the plating films is better. '5 β gold, tin-bismuth alloy, tin-zinc alloy, and more, the insulating handle In order to shape the part of the electronic component into a plurality of electronic parts and then cut the insulating substrate
第10頁 1254955 五、發明說明(6) 麵片化 ♦朴 開D * ,藉著如如跨相鄰之零件形成區域般形成,可使該 讀外Γ之底面積更寬’變成易形成該外部端子部。因而, 板。#端子部之導通不良變少,可得到可靠性高之配線基 製迻2 )本發明為達成上述之目的,提供一種配線基板之 件1Γ =去,用以在絕緣基板上組裝被動元件後形成電子零 其特徵為在該絕緣基板之一表面形成導體膜;在該絕 奋土 f之既定位置形成開口部;在該絕緣基板之開口部内 填導電性構件而形成該配線之外部端子部;除去該導體 膜之不要之部分後形成既定之圖案之配線。 、若依據該手段(2 ),因在該絕緣基板之開口部部埋設 導電性構件而形成外部端子部,和如以往之在絕緣基板之 雙面形成配線圖案之製造方法相比,可使製程數變少。 而,可降低該配線基板之製造費用。 又,因該絕緣基板之開口部之底面變成和該外部端 部之面積大致相同,和以往之用以確絕緣基板之矣而 通之貫穿孔或非貫穿孔之孔徑㈣,開導 埋設該導電性構件之製程變得容易。 〜見 又此時,形成該外部端子部之製程藉著以電鍍 啦*讀絕 緣基板之開口部内充填銅、鎳、金、銀、錫之其中之一或 者由這些材料之合金而形成,可容易的形成該外部端子一 部。 又,形成該外部端子部之製私在该開口部之面積充分 寬之情況,不用該電鍍形成,而使用印刷法在該絕緣基板Page 10 1254955 V. Description of the invention (6) Patching ♦ Pukai D*, by forming a region like a cross-adjacent part, the bottom area of the read cymbal can be made wider~ External terminal section. Thus, the board. #连接部的管通不差不差, A highly reliable wiring base system can be obtained. 2) In order to achieve the above object, the present invention provides a wiring substrate member 1 Γ = to be formed after assembling a passive component on an insulating substrate. The electron zero is characterized in that a conductor film is formed on one surface of the insulating substrate; an opening is formed at a predetermined position of the insulating ground f; and an external member is formed by filling a conductive member in the opening of the insulating substrate; The unnecessary portion of the conductor film forms a wiring of a predetermined pattern. According to the means (2), the external terminal portion is formed by embedding a conductive member in the opening portion of the insulating substrate, and the manufacturing method can be performed as compared with the conventional method of forming a wiring pattern on both surfaces of the insulating substrate. The number is less. However, the manufacturing cost of the wiring board can be reduced. Further, since the bottom surface of the opening portion of the insulating substrate is substantially the same as the area of the outer end portion, and the hole diameter (four) of the through hole or the non-through hole which is passed through the conventional insulating substrate, the conductivity is buried and buried. The manufacturing process of the components becomes easy. ~ At this time, the process of forming the external terminal portion is formed by filling one of copper, nickel, gold, silver, and tin in an opening portion of the insulating substrate by electroplating or forming an alloy of these materials. Forming a part of the external terminal. Further, in the case where the outer portion of the external terminal portion is formed to have a sufficiently wide area in the opening portion, the plating method is used instead of the plating method, and the insulating substrate is used in the insulating substrate.
1254955 五、發明說明(7) 一 之開口部内充填導電性樹脂後令硬化而形成也可。 又’在遺手段(2 )’在形成該配線之圖案後,一般在 該圖案部及該外部端子部之表面形成焊錫黏接劑。此時, 在該焊錫黏接劑上,顧慮環境保護,使用不含鉛之材料較 好尤置錫、錫銀合金、錫銅合金、錫絲合金、錫辞 合金之其中一種之電鍍膜較好。 又’該絕緣基板一般形成該電子零件之零件形成區域 有夕個,一,形成多個電子零件後切斷該絕緣基板而個片 1匕口而’藉著如如跨相鄰之零件形成區域般形成,可使 2開口部之底面積更寬,變成易形成該外部端子部。此 時,在個片化時切斷該外部端子部,分離成各個電子零件 之外部端子部。 (3 )本發明為達成上述之目的,提供一種電子零件, ,裂被動兀件而形成,其特徵為具有配線基板,由具有既 ^之圖案之開口之絕緣基板、在該絕緣基板上以既定之圖 两、=成之配線以及充填該開口後和該配線連接並在形成該 :線:該絕緣基板之反面露出之外部端子部構成;被動元 一’设於,配線基板上;導電性構件,將該配線和該被動 Z件在電虱上連接;以及密封用絕緣體,將該被動元件之 周圍密封。 若依據該手段(3),因使用在該手段(1)記載之配線基 該配線基板谷易小型化、薄型化,該電子零件容易小1254955 V. INSTRUCTION OF THE INVENTION (7) The opening may be filled with a conductive resin and then cured. Further, after the pattern of the wiring is formed in the method (2), a solder adhesive is generally formed on the surface of the pattern portion and the external terminal portion. At this time, on the solder adhesive, it is preferable to use environmentally-friendly materials, and it is preferable to use a lead-free material, preferably a tin, a tin-silver alloy, a tin-copper alloy, a tin-wire alloy, or a tin-plated alloy. . Further, the insulating substrate generally forms a part forming region of the electronic component. First, after forming a plurality of electronic components, the insulating substrate is cut and the individual sheets are opened, and the area is formed by a cross-over adjacent part. In general, the bottom area of the two openings can be made wider, and the external terminal portion can be easily formed. At this time, the external terminal portion is cut at the time of singulation, and is separated into external terminal portions of the respective electronic components. (3) In order to achieve the above object, the present invention provides an electronic component formed by splitting a passive component, which is characterized in that it has a wiring substrate, and an insulating substrate having an opening of a pattern is defined on the insulating substrate. Figure 2, the wiring of the wiring, and the filling of the opening, and the wiring is connected to form: the line: the external terminal portion exposed on the reverse side of the insulating substrate; the passive element is disposed on the wiring substrate; the conductive member The wiring and the passive Z piece are connected to the electric pole; and the sealing insulator seals the periphery of the passive element. According to the means (3), the wiring substrate described in the means (1) is easy to be miniaturized and thinned, and the electronic component is easily small.
又,藉著在該外部端子部使用銅、鎳、金、銀、錫之Further, by using copper, nickel, gold, silver, and tin in the external terminal portion
第12頁 1254955 五、發明說明(8) ,可使該外部端 其中之~或者這些#料之合金 子部之電阻值及該外部端亥;J 外 小,可使電子零件之動作特性變佳a案#之接觸電阻 又,在該手段(3 ),A结 — 材質及形狀組合在該絕緣基ΐ上//固上該配線之 帶型電子機器可小型化口件之小型化變得容易,揭 四、【實施方式】 發明之實施例 图1係表示本發明之實施例之應用配 電容器之概略構造之示意圖,圖1 (I)係曰片^ + /曰片型 面圖,圖1(b)係圖1(a)之在A—A 器之平 (a)及圖1(b)上省略密封用絕緣體复口圖。此外,圖! 在圖1,1係絕緣基板,2係配線,3係雷裳哭 質固態電解電容哭元#),3 & 4 ’、電合-7C件(鈕 金屬燒結體嶋v 、包W貝j 4A係線狀導體,4B係導電性黏接 劑,5係密封用絕緣體,6係焊錫保護臈,7係端子電鍍。 本f明之實施例之應用配線基板之晶片型電容器:圖 1(a)及圖1(b)所示,由以下之構件構成,配線基板,在絕 緣基板1設置了配線(導體圖案)2 ;電容器元件3,設於該 配線基板(絕緣基板丨)上;線狀導體4八,將該配線2和該電 容器元件3之陽極301在電氣上連接;線狀導體“,將該配 線2和該電容器元件3之陰極3 〇2在電氣上連接;以及密封 1254955Page 12 1254495 5. Inventive Note (8), the resistance value of the alloy part of the external end or the outer part of the material can be made small, and the action characteristics of the electronic component can be improved. In the case of the contact resistance of the case #, in the means (3), the A-junction - the combination of the material and the shape on the insulating base, and the fixing of the wiring type, the electronic device can be miniaturized and miniaturized. [Embodiment] Embodiments of the Invention FIG. 1 is a schematic view showing a schematic configuration of an application capacitor according to an embodiment of the present invention, and FIG. 1(I) is a ^片^+/曰片型面图, FIG. (b) Fig. 1(a) shows a closed view of the sealing insulator in the flat (a) of Fig. 1(a) and Fig. 1(b). In addition, the map! In Fig. 1, 1 series insulated substrate, 2 series wiring, 3 series Lei Chang crying solid electrolytic capacitor crying yuan #), 3 & 4 ', electric -7C pieces (button metal sintered body 嶋 v, package W shell j 4A linear conductor, 4B conductive adhesive, 5 series sealing insulator, 6-series soldering protection, 7-series terminal plating. The wafer type capacitor to which the wiring board is applied in the embodiment of the present invention: Fig. 1(a) As shown in Fig. 1(b), the wiring board is provided with a wiring (conductor pattern) 2 on the insulating substrate 1, and the capacitor element 3 is provided on the wiring board (insulating substrate); the linear conductor 4, the wiring 2 and the anode 301 of the capacitor element 3 are electrically connected; the linear conductor " electrically connects the wiring 2 and the cathode 3 〇 2 of the capacitor element 3; and seals 1254955
五、發明說明(9) 用絕緣體5,將該電容器元件3之周圍密封。 此時,該配線2如圖1 (b )所示,由以下之構件構成 圖案部2 0 1,設於該絕緣基板1之表面;及外部端子部 2 0 2,埋設於該絕緣基板1,而且在設置該圖案部2 〇 j之面 之背面露出。此時,該外部端子部2 〇 2例如以電鍍銅形 成。 又 乂 又,在該配線2之圖案部201之既定區域上設置焊錫 護膜6,在該圖案部201及該外部端子部2〇2之露出面上設 置端子電鐘7。該端子電鑛7例如由錫、錫銅合金、錫絲<合 金、錫鋅合金等未含鉛之金屬材料構成。 ^又,在本發明之實施例之應用配線基板之晶片型電容 器,該電容器元件3例如係钽質固態電解電容器元件,由 構件:成’陽極301 ’由钽之多孔質燒結體構成; 陰和 ,由如一氧化錳或導電性高分子之固態電解質 層、炭層以及銀層構成;以及金屬燒結體(電介質)303, 由在酸性液中以電化學合成之五氧化鈕構成。' ^及圖3係用以說明本發明之實施例之在應用配線基 曰:片型電容器使用之配線基板之製造方法之示意圖, 形成外部端子用之開口部之製程之剖面圖,圖2 ^^外部端子部之製程之剖面圖,圖3(a)係形成圖 剖面圖,圖3(b)係形成焊錫保護膜及端子電 鍍之製程之剖面圖。 本$月之貝^例之在應用配線基板之晶片型電容器使 用之配線基板之製造方法係和在TCp(Tape c町^V. INSTRUCTION OF THE INVENTION (9) The periphery of the capacitor element 3 is sealed with an insulator 5. At this time, as shown in FIG. 1(b), the wiring 2 is formed on the surface of the insulating substrate 1 by the following members, and the external terminal portion 220 is embedded in the insulating substrate 1. Further, the back surface of the surface on which the pattern portion 2 设置j is provided is exposed. At this time, the external terminal portion 2 〇 2 is formed, for example, of electroplated copper. Further, a solder mask 6 is provided on a predetermined region of the pattern portion 201 of the wiring 2, and a terminal electric clock 7 is provided on the exposed portion of the pattern portion 201 and the external terminal portion 2A2. The terminal electric ore 7 is made of, for example, a metal material containing no lead such as tin, tin-copper alloy, tin wire, alloy, or tin-zinc alloy. Further, in the embodiment of the present invention, a wafer type capacitor to which a wiring substrate is applied, such as a tantalum solid electrolytic capacitor element, is composed of a member: an 'anode 301' consisting of a porous sintered body of tantalum; The solid electrolyte layer such as manganese monoxide or a conductive polymer, a carbon layer and a silver layer; and the metal sintered body (dielectric) 303 are composed of a pentoxide button electrochemically synthesized in an acidic liquid. '^ and FIG. 3 are schematic views for explaining a manufacturing method of a wiring substrate used for a chip capacitor according to an embodiment of the present invention, and a cross-sectional view showing a process for forming an opening portion for an external terminal, FIG. 2 ^ is a cross-sectional view of the process of the external terminal portion, Fig. 3 (a) is a cross-sectional view of the process, and Fig. 3 (b) is a cross-sectional view of a process for forming a solder resist film and terminal plating. The manufacturing method of the wiring board used in the wafer type capacitor using the wiring board of the present invention is in the TCp (Tape c town^
Package)之製造使用之配線基板(帶載具)一樣之 法,例如使用卷盤對卷盤方法在帶狀之絕緣基板^形成配 線(導體圖案)下去。以下按照圖2及圖3說明其製造方法。 首先,如圖2(a)所示,準備在帶狀之絕緣基板1力/ 表面形成了導體膜8之帶材料後,在該帶材料之既定位襄 形成用以形成外部端子部之開口部]A。此時,在該絕緣多 板1例如使用聚醯亞胺帶,在該導體膜8使用滾軋銅箔成稼 解銅箔。In the same manner as the wiring substrate (with a carrier) used for the manufacture of the package, for example, a reel-to-reel method is used to form a wiring (conductor pattern) on a strip-shaped insulating substrate. Hereinafter, a method of manufacturing the same will be described with reference to FIGS. 2 and 3. First, as shown in Fig. 2(a), after the tape material of the conductor film 8 is formed on the surface of the strip-shaped insulating substrate 1, the opening portion of the tape material is formed to form an opening portion for forming the external terminal portion. ]A. At this time, in the insulating multi-plate 1, for example, a polyimide tape is used, and in the conductor film 8, a rolled copper foil is used to form a copper foil.
又,該開口部1A例如以使用二氧化碳氣體雷射戒交棼 準分子雷射之雷射加工形成。又此時,該絕緣基板〗係在 一方向長,設置形成多個晶片型電容器之區域(零件形成 區域)CA,該開口部1A例如如圖2(a)所示,如路二鄰厶零 件形成區域CM、CA2般形成。々跨相J 又’不在形成了該導體膜8之帶材料形成該開口部 1A,而例如藉著使用模具之沖孔加工,預先在該絕緣養板 1开> 成該開口部1八後,在其一表面黏接該導體膜8也<。 其-人’例如藉著以該導體膜8為陰極之電鑛銅,如_ * (b)所示,在該開口部丨A内充填銅,形成該配線2之外鄯1 子部2 0 2 °此時,該外部端子部2 0 2充滿該開口部1 a内’开/ 成為自該絕緣基板1不突出之程度。又此時,雖省略_ 示,用抗飿劑覆蓋該導體膜8之表面侧。 此時,將該絕緣基板1之開口部1A形成為跨2個零件/ 成區域CA1、CA2,該開口部1 A之底面因具有2個該外鄯減, 子部之面積’電鍍液易流入該開口部1 A内,可容易的形成Further, the opening portion 1A is formed, for example, by laser processing using a carbon dioxide gas laser or a cross-excimer laser. Further, at this time, the insulating substrate is formed in a direction in which a plurality of wafer type capacitors (part forming regions) CA are formed, and the opening portion 1A is, for example, as shown in FIG. 2(a). The formation regions CM and CA2 are formed. The cross-phase J and the material of the tape forming the conductor film 8 are not formed, and the opening 1A is formed by, for example, punching using a mold, and the insulating plate 1 is opened in advance. , bonding the conductor film 8 to one surface thereof is also <. The human-like person is filled with copper in the opening portion 丨A by the electric ore copper having the conductor film 8 as a cathode, for example, as shown in _*(b), and the 子1 sub-portion 20 is formed outside the wiring 2. At this time, the external terminal portion 220 is filled in the opening portion 1a to be 'opened/closed to the extent that the insulating substrate 1 does not protrude. Further, at this time, the surface side of the conductor film 8 is covered with an anti-caries agent, although omitted. At this time, the opening 1A of the insulating substrate 1 is formed to span the two parts/regions CA1 and CA2. The bottom surface of the opening 1 A has two outer diameters, and the area of the sub-section is easy to flow into the plating liquid. The opening 1 A can be easily formed
12549551254955
該外部端子部2 Ο 2。 其次如圖3(a).所示,腐蝕該導體膜8,除去不要之部 分後,形成該配線2之圖案部201。此時,該圖案部2〇1 ^ 如如圖3(a)所示,跨2個零件形成區域CA1、CA2,形成一 端和第一零件形成區域C A1之電容器元件之陰極連接,另 一端和第二零件形成區域CA2之電容器元件之陽極連接之 圖案。又此時,未限定為該圖3(a)所示之圖案,在各自之 零件形成區域CA1、CA2形成獨立之配線也可。 又,如圖3(b)所示,在該配線2之圖案部2(n之既定位 置形成焊錫保護膜6,在該圖案部2〇1及該外部端子部2〇2 之路出面形成端子電鍍7。此時,該端子電鍍7例如形成 錫、錫銀合金、錫銅合金、錫鉍合金、錫辞合金等之電鍍 膜。 在依據以上之步驟所形成之在本實施例之晶片蜜電容 器使用之配線基板,藉著將該外部端子部2〇2如埋設於該 絕f基板1般形成,和以往之用以確保該絕緣基表面 和背面導通之貫穿孔之孔徑(麻 ,-^ 彳、展面)相比,對於雯件形成區 域CA之該絕緣基板之開口部丨八之底 202之形成變得容易。又,因口 爻見卜%而形 、 ^ * ,、在該絕緣基板1之〆表面形 成該圖案部201,和在雙面形成圖 卜,可 使製程數變少,可降低製造費用案之衣這方法相比 圖4係用以說明本發明之實 之 晶片型電容器使用之配線基板之製造方V之示咅圖,圖4 (a)係形成線狀導體之製程之立丨〗 ^ \ ^ ^ 衣彺< 口1〗面圖,圖4(b)係組装電今The external terminal portion 2 Ο 2 . Next, as shown in Fig. 3 (a), the conductor film 8 is etched, and the unnecessary portion is removed to form the pattern portion 201 of the wiring 2. At this time, the pattern portion 2〇1 ^ forms a region CA1, CA2 across the two parts as shown in FIG. 3(a), and forms a cathode connection of the capacitor element having one end and the first part forming region CA1, and the other end. A pattern of anode connections to the capacitor elements of the second part forming region CA2. Further, in this case, the pattern shown in Fig. 3(a) is not limited, and independent wiring may be formed in each of the component forming regions CA1 and CA2. Further, as shown in FIG. 3(b), the solder resist film 6 is formed in the pattern portion 2 of the wiring 2 (the predetermined position of n), and the terminal is formed on the exit surface of the pattern portion 2〇1 and the external terminal portion 2〇2. Plating 7. At this time, the terminal plating 7 forms, for example, a plating film of tin, tin-silver alloy, tin-copper alloy, tin-bismuth alloy, tin-alloy, etc. The wafer honey-capacitor of the present embodiment formed in accordance with the above steps The wiring board to be used is formed by embedding the external terminal portion 2〇2 in the insulating substrate 1 and the aperture of the through hole for ensuring the conduction of the surface and the back surface of the insulating substrate (麻, -^ 彳In contrast, the opening portion 202 of the insulating substrate of the fabric forming region CA is easier to form, and the shape of the opening is improved by the shape of the mouth. The pattern portion 201 is formed on the surface of the crucible, and the pattern is formed on both sides, so that the number of processes can be reduced, and the manufacturing cost can be reduced. Compared with FIG. 4, the wafer type capacitor for explaining the present invention is used. The manufacturing side of the wiring substrate used is shown in the figure, and Figure 4 (a) is the forming line. The process of the conductor is ^ ^ ^ ^ ^ 彺 彺 lt; mouth 1〗 face, Figure 4 (b) is assembled electric today
弟16頁 1254955 五、發明說明(12) 器元件之製程之剖面圖。 為了使用按照使用該圖2及圖3所說明之步驟形成之配 線基板形成晶片型電容器,首先,例如如圖4 (a )所示,在 該各零件形成區域CA之連接電容器元件3之陽極301之部分 形成線狀導體4A。該線狀導體4A例如印刷或塗抹銀膠等導 電性膠而形成。 接著,在該各零件形成區域CA之連接電容器元件3之 陰極302之部分塗抹導電性黏接劑4B,如圖4(b)所示,將 該電容器元件3放在該各零件形成區域CA上後黏接。 然後’雖省略圖示,在黏接了該電容器元件3之面, 例如塗抹熱硬化性樹脂等密封用絕緣體5後令硬化,將該 電容器元件3密封後,切斷該各零件形成區域CA而個片化 日^ ’可得到如圖1 (a )及圖1 ( b )所示之晶片型電容器。此 時’如跨相鄰之零件形成區域CA1、CA2般形成之配線2之 圖案W201及外部端子部2〇2被切斷,變成各自獨立之端 子。 /如以上之說明所示,若依據本實施例之配線基板,在 ^,在該晶片型電容器使用之配線基板時,藉著將外部端 & ^ ^ 2埋設於絕緣基板1,和以往之確保該絕緣基板之表 pe二面導通之貫穿孔相比,對於一個零件形成區域之該 二六1 A之底面積變寬。因而,外部端子部2〇 2之形成變。 == 又,因該外部端子部2 0 2之形成變得容易,難發 生導通不良。 又,藉著如跨相鄰之零件形成區域CA1、(^2般形成用16th page 1254955 V. INSTRUCTIONS (12) Sectional view of the process of the device components. In order to form a wafer type capacitor using the wiring substrate formed in accordance with the steps described with reference to FIGS. 2 and 3, first, for example, as shown in FIG. 4(a), the anode 301 of the capacitor element 3 is formed in the respective component forming regions CA. The portion is formed as a linear conductor 4A. The linear conductor 4A is formed, for example, by printing or applying a conductive paste such as silver paste. Next, a conductive adhesive 4B is applied to a portion of the cathode formation 302 of the component forming region CA to which the capacitor element 3 is connected, and as shown in FIG. 4(b), the capacitor component 3 is placed on each of the component forming regions CA. After bonding. Then, the sealing insulator 5 such as a thermosetting resin is applied to the surface of the capacitor element 3, and the sealing member 5 is cured, and the capacitor element 3 is sealed, and the component forming regions CA are cut. The chip type capacitors can be obtained as shown in Fig. 1 (a) and Fig. 1 (b). At this time, the pattern W201 and the external terminal portion 2〇2 of the wiring 2 formed so as to straddle the adjacent component forming regions CA1 and CA2 are cut and become independent terminals. As shown in the above description, according to the wiring board of the present embodiment, when the wiring board used for the chip type capacitor is used, the external end & ^ ^ 2 is buried in the insulating substrate 1, and the conventional The area of the bottom surface of the two-part 1 A of the one-piece forming region is widened as compared with the through-holes in which the surface pe of the insulating substrate is turned on. Therefore, the formation of the external terminal portion 2〇 2 is changed. == Further, the formation of the external terminal portion 220 is facilitated, and conduction failure is less likely to occur. Moreover, by forming the regions CA1, (^2) as if they are adjacent to each other
1254955 五、發明說明(13) 以形成該外部端子部2 0 2之開口部1 A,因該開口部1 A之底 面積變成更寬,該外部端子部2 0 2之形成變得更容易,也 難發生導通不良。 又,對於一個零件形成區域之該開口部1 A之底面積變 寬,因外部端子部2 0 2之形成變得容易,在該配線基板小 型化之情況,也易形成該外部端子部2 0 2。因而,和以往 之配線基板相比,小型化、薄型化容易,電子零件之小型 化、薄型化也變得容易。 又,因將該外部端子部2 0 2埋設於該絕緣基板1,只在 該絕緣基板1之一表面形成該圖案部2 0 1即可。因而,和以 往之在絕緣基板1之雙面形成配線圖案之情況相比,製程 數變少,可降低配線基板之製造費用。 又,在該配線2和該電容器元件3之陽極3 0 1之連接, 藉著使用線狀導體4A,如以往之圖6(a)及圖6(b)之晶片型 電容器所示,因在該絕緣基板1不必設置段差部,該配線 基板之製造變得容易,可降低配線基板之製造費用。 又,藉著在該配線2之圖案部2 0 1及外部端子部2 0 2之 表面形成錫、錫銀合金、錫銅合金、錫鉍合金、錫鋅合金 等未使用鉛之端子電鍍7,可顧慮到環境保護。 以上依照本發明之實施例之應用配線基板之晶片型電 容器具體的說明本發明,但是本發明未限定為上述之實施 例,在不超出其主旨之範圍可進行各種變更係理所當然。 例如,在上述之實施例之應用配線基板之晶片型電容 器,在晶片之被動元件上使用钽質固態電解電容器元件1254955 V. Inventive Note (13) In order to form the opening 1A of the external terminal portion 220, the bottom portion of the opening 1A becomes wider, and the formation of the external terminal portion 220 becomes easier. It is also difficult to cause poor conduction. Moreover, the area of the bottom portion of the opening portion 1 A in one part forming region is widened, and the formation of the external terminal portion 220 is facilitated, and the external terminal portion 20 is easily formed when the wiring substrate is downsized. 2. Therefore, it is easier to reduce the size and thickness of the wiring board than the conventional wiring board, and it is easy to reduce the size and thickness of the electronic component. Further, since the external terminal portion 220 is buried in the insulating substrate 1, the pattern portion 20 may be formed only on one surface of the insulating substrate 1. Therefore, compared with the case where the wiring pattern is formed on both sides of the insulating substrate 1 in the past, the number of processes is reduced, and the manufacturing cost of the wiring substrate can be reduced. Further, the wiring 2 and the anode 310 of the capacitor element 3 are connected by using the linear conductor 4A as shown in the conventional wafer type capacitors of Figs. 6(a) and 6(b). The insulating substrate 1 does not have to have a step portion, and the wiring substrate can be easily manufactured, and the manufacturing cost of the wiring substrate can be reduced. Further, by using the lead portion plating 7 of tin, a tin-silver alloy, a tin-copper alloy, a tin-bismuth alloy, or a tin-zinc alloy, which is not used, on the surface of the pattern portion 2 0 1 and the external terminal portion 220 of the wiring 2, Can be concerned about environmental protection. The present invention is specifically described above with reference to a wafer-type capacitor to which a wiring board is applied according to an embodiment of the present invention, but the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention. For example, in the wafer type capacitor to which the wiring substrate is applied in the above embodiment, the tantalum solid electrolytic capacitor element is used on the passive component of the wafer.
第18頁 1254955 五、發明說明(14) 3 ’但g是未限定如此’藉著使用各種被動元件形成電子零 。得到和對於上述之實施例之應用配線基板之晶片型電 容器所說明的一樣之效果係理所當然。 α 又’在上述之實施例之應用配線基板之晶片型電容 器’利用電鑛銅形成該外部端子部2 〇 2,但是未限定如 此’例如使用鎳、金、銀、錫等也可,用印刷法等埋入導 電性膠而形成也可。 抑 又’在上述之實施例之應用配線基板之晶片型電容 為’如圖4(a)所示,在該配線基板上形成線狀導體4Α後, 組裝该電容器元件3,但是未限定如此,例如在該陽極3〇 J 側組裝預先形成了導體〇之電容器元件3也可。 圖5係表示本發明之實施例之組裝了作為電感元件之 ,圈_之配線基板之示意圖,圖5(a)係平面圖,圖5(b)係沿 著A A線/之剖面圖。在圖5,丨係絕緣基板,係外部端 子部,21係線圈狀配線,22係線狀導體(金線),5係密 ^絕緣體7係端子電鍍。本配線基板如圖5(&)及圖5(匕) 1二線由狀以導下體件J冓,成,線圈狀配線21,設於絕緣基板 2。2在、it m 狀配線21之一端和外部端子部 一 連接,外部端子部202,和線圈狀配線21之另 一知在電氣上連接;以及密封用 乃 21之周圍密封。 及山封用絶、緣體5 ’將線圈狀配線 又 ,綠回& 線基板如圖5(b)所示,由以下之構件槿出 綱絕緣基板1之表面之線圈狀配線21等 及外部端子部2。2 ’埋設於該絕緣基板 ’Page 18 1254955 V. INSTRUCTIONS (14) 3 ' But g is not limited to this' by using various passive components to form an electron zero. It is a matter of course that the same effects as those described for the wafer type capacitor to which the wiring board of the above embodiment is applied are obtained. In the above-described embodiment, the wafer-type capacitor of the wiring board of the above-described embodiment is formed of the outer terminal portion 2 〇2 by electro-mineral copper. However, it is not limited to the case of using, for example, nickel, gold, silver, tin, or the like. It may be formed by embedding a conductive paste or the like. In the above-described embodiment, the wafer-type capacitor to which the wiring board is applied is 'as shown in FIG. 4(a), and after the linear conductor 4 is formed on the wiring substrate, the capacitor element 3 is assembled, but the invention is not limited thereto. For example, the capacitor element 3 in which the conductor turns are formed in advance may be assembled on the anode 3〇J side. Fig. 5 is a view showing a wiring board in which a ring element as an inductance element is assembled according to an embodiment of the present invention, Fig. 5(a) is a plan view, and Fig. 5(b) is a cross-sectional view taken along line A A. In Fig. 5, the lanthanum-based insulating substrate is an external terminal portion, a 21-series coil-shaped wiring, a 22-series linear conductor (gold wire), and a 5-series insulator 7-series terminal plating. As shown in Fig. 5 (&) and Fig. 5 (匕), the wiring board is formed by the lower body member J, and the coiled wiring 21 is provided on the insulating substrate 2. The wiring of the it m-shaped wiring 21 One end is connected to the external terminal portion, the external terminal portion 202 is electrically connected to the other of the coil-shaped wiring 21, and the periphery of the sealing member 21 is sealed. As shown in Fig. 5(b), the coil-like wiring and the green-backed and spliced wiring are as shown in Fig. 5(b), and the coil-like wiring 21 on the surface of the insulating substrate 1 is formed by the following components. External terminal portion 2. 2 'buried in the insulating substrate'
1254955 五、發明說明(15) 圖案之面之背面。此時,該外部端子部2 〇 2例如用電鍍鋼 等形成。 山 又’在外部端子部202之露出面上設置端子電鍍7。該 端子電鑛7例如由錫、錫銀合金、錫銅合金、錫鉍合金、 錫鋅合金等未含鉛之金屬材料構成。 又,本配線基板如以下所示製造。本發明之實施例之 應用配線基板‘之線圈使用之配線基板之製造方法係和在 T^P(Tape Carrier Package)之製造使用之配線基板(帶载 一樣之製造方法,例如使用卷盤對卷盤方法在帶狀之 絕緣基板上形成線圈下去。 百先 如圖2(a)所示,平備在帶狀之絕緣基板1之一 ς =形成了由滚軋銅箔或電解銅箔構成之導體膜8之帶材 開Ϊ郫=該帶1料之既定位置形成用以形成外部端子部之 汗dHA。此時,在該絕緣基板1例如使用聚醯亞胺帶。 子雷例如以使用二氧化碳氣體雷射或受激準分 使;槿且:、、Ψ:工形成。不形成該開口部1a,而例如藉著 1 A後,、^直一声加工,預先在該絕緣基板1形成該開口部 為陰極ί電鑛= 可。藉著以該導體膜 外部端子部202 形成導體膜8之 ,之表面側。二二又:子 子電錄7 〇此日卑,二> 山 < 路出面形成多而 銅合全、錫二人端子電鑛7形成例如錫、锡銀合金、錫 ^錫鉍合金、錫鋅合金等之電鍍膜較好。1254955 V. INSTRUCTIONS (15) The back of the face of the pattern. At this time, the external terminal portion 2 〇 2 is formed, for example, by galvanized steel or the like. On the other hand, terminal plating 7 is provided on the exposed surface of the external terminal portion 202. The terminal electric ore 7 is made of, for example, a metal material containing no lead such as tin, tin-silver alloy, tin-copper alloy, tin-bismuth alloy or tin-zinc alloy. Moreover, this wiring board is manufactured as follows. A method of manufacturing a wiring board using a coil of a wiring board of the embodiment of the present invention is a wiring board (a tape-like manufacturing method used for manufacturing a T-P (Tape Carrier Package), for example, using a reel-to-roll The disk method forms a coil on the strip-shaped insulating substrate. As shown in Fig. 2(a), one of the strip-shaped insulating substrates 1 is formed by forming a rolled copper foil or an electrolytic copper foil. The tape opening of the conductor film 8 = the predetermined position of the tape 1 forms the sweat dHA for forming the external terminal portion. At this time, for example, a polyimide film is used for the insulating substrate 1. The gas laser or the excitation component is formed; and::, Ψ: the worker is formed. The opening portion 1a is not formed, and the opening is formed in the insulating substrate 1 in advance by, for example, 1 A. The part is the cathode _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Forming a large number of copper and copper, tin two-terminal terminal electric ore 7 forming, for example, tin, tin A plating film of a silver alloy, a tin-tin-bismuth alloy, a tin-zinc alloy or the like is preferable.
第20頁 1254955 五、發明說明(16) —--- 接著,將該導體膜8腐独成線圈狀,除去不要^立、 後,形成線圈狀配‘線2 1。線圈狀配線2 1之一娘^ ^ 部7刀 崎和外部踹子 部2 0 2連接。線圈狀配線2 1之另一端和利用繞壯道 、狀^體(金 線)22和其他之外部端子部2 0 2連接。利用密封 、 J用、、、邑緣體5 將形成了線圈狀配線2 1之面密封後,切斷成個片。 依據以上之步驟,本發明之實施例之組裝了作為電威 元件之線圈之配線基板’因將在該絕緣基板1上所开$总 導體膜8蝕刻後得到’不必裝載另外製作之線圈零件,可 容易的製造可小型化、薄型化之線圈。 本發明未限定為上述之實施例,可進行各種變形。例 如,藉著組合配線之材質及形狀在絕緣基板上直接形成被 動元件也可。即,藉著在絕緣基板上裝載電晶體元件後利 用密封用絕緣體將該電晶體元件密封,可得到小型下面電 極型電晶體。又,藉著在絕緣基板上裝載電阻元件並將該 電阻元件之兩端和外部端子部連接後利用密封用絕緣體將 4電阻元件始、封’可得到小型下面電極型電阻。 發明之效果 本發明之配線基板,因在具有開口之絕緣基板上形成 既定之配線圖案,具有對該開口充填後和該配線連接並在 形成該配線之該‘絕緣基板之反面露出之外部端子部,得到 如下之效果。 (1)付到使付連接電容器元件之晶片型電容器等被動Page 20 1254955 V. INSTRUCTION OF THE INVENTION (16) ----- Next, the conductor film 8 is rotted into a coil shape, and the coil-shaped distribution "line 21" is formed. One of the coiled wirings 2 1 is connected to the external scorpion 2 2 2 . The other end of the coil-shaped wiring 2 1 is connected to the winding body, the body (gold wire) 22, and other external terminal portions 220. The surface on which the coil-shaped wiring 2 1 is formed is sealed by the sealing, J, and the rim body 5, and then cut into individual pieces. According to the above steps, the wiring substrate of the embodiment of the present invention in which the coil of the electric power component is assembled is obtained by etching the total conductor film 8 on the insulating substrate 1 to obtain a coil component that does not have to be separately mounted. It is easy to manufacture a coil that can be miniaturized and thinned. The present invention is not limited to the above embodiments, and various modifications can be made. For example, the driven element may be directly formed on the insulating substrate by the material and shape of the combined wiring. That is, by mounting the transistor element on the insulating substrate and sealing the transistor element with a sealing insulator, a small-sized lower electrode type transistor can be obtained. Further, by mounting a resistor element on an insulating substrate and connecting both ends of the resistor element to the external terminal portion, the resistor element is sealed and sealed by a sealing insulator to obtain a small-sized lower electrode type resistor. Advantageous Effects of Invention A wiring board according to the present invention has a predetermined wiring pattern formed on an insulating substrate having an opening, and has an external terminal portion that is filled with the opening and connected to the wiring and exposed on the opposite side of the 'insulating substrate on which the wiring is formed. , the following effects are obtained. (1) Passive to a chip type capacitor such as a capacitor element to be connected
第21頁 1254955 五、發明說明(17) (2 )因形成連接電容器元件之晶片型電容器等被動元 件,得到可容易製造之配線基板。 (3 )因形成連接電容器元件之晶片型電容器等被動元 件,可提供一種配線基板,使製程數變少,可降低製造費 用。 (4)因藉著蝕刻在絕緣基板上所形成之導體膜得到線 圈,不必裝載另外製作之線圈零件,可容易的製造可小型 化、薄型化之線圈等零子零件。Page 21 1254955 V. INSTRUCTION DESCRIPTION (17) (2) A wiring board that can be easily manufactured is obtained by forming a passive element such as a chip capacitor that connects capacitor elements. (3) By forming a passive element such as a chip capacitor to which a capacitor element is connected, a wiring board can be provided, which reduces the number of processes and reduces manufacturing costs. (4) Since the coil is obtained by etching the conductor film formed on the insulating substrate, it is not necessary to mount the separately manufactured coil component, and it is possible to easily manufacture a sub-component such as a coil which can be reduced in size and thickness.
第22頁 1254955 圖式簡單說明 五、【圖式簡單說明】 圖1(a)及(b)‘係表示本發明之實施例之應用配線基板 之晶片型電谷器之概略構造之不思圖。 圖2係用以說明本發明之實施例之在應用配線基板之 晶片型電容器使用之配線基板之製造方法之示意圖,圖2 (a)係形成外部端子用之開口部之製程之剖面圖,圖2(°b) 係形成外部端子部之製程之剖面圖。 圖3係用以說明本發明之實施例之在應用配線基 晶片型電容器使用之配線基板之製造方法之示意圖土 1 (a)係形成圖案部之製程之剖面圖,圖3(b)係形 護膜及端子電鑛之製程之剖面圖。 于’ ’、 圖4係用以說明本發明之實施例之在 ,,,t,, ^ j =元^之成=狀導體之製程之剖面圖,圖4(b)係組裝電容 口口兀件之製程之剖面圖。 :5係表示本發明之實施例之組裝了作為電感元件之 圈,配線基板之示意圖,圖5(&)係平面圖,圖5(b)係沿 考A —A 線之剖面圖。 ^ 6 (a)及(b)係表示以往之晶片型電容器之概略構造 义杈式剖面圖。 元件符號說明: 1 絕緣基板 1 A 絕緣基板之開口部Page 22 1254955 Brief Description of the Drawings FIG. 1 (a) and (b)' are schematic diagrams showing the schematic structure of a wafer type electric grid device to which a wiring board is applied according to an embodiment of the present invention. . 2 is a schematic view for explaining a method of manufacturing a wiring board used for a wafer type capacitor to which a wiring board is applied according to an embodiment of the present invention, and FIG. 2(a) is a cross-sectional view showing a process of forming an opening portion for an external terminal. 2 (°b) is a cross-sectional view showing a process of forming an external terminal portion. 3 is a cross-sectional view showing a process of manufacturing a wiring board used in a wiring substrate type capacitor according to an embodiment of the present invention. FIG. 3(b) is a cross-sectional view showing a process of forming a pattern portion, and FIG. Sectional view of the process of the film and terminal electrode. 4, FIG. 4 is a cross-sectional view showing the process of forming a conductor in the embodiment of the present invention, t, ^ j = yuan = ^, and FIG. 4(b) is an assembled capacitor port. A cross-sectional view of the process of the piece. Fig. 5 is a plan view showing a wiring board as an inductance element in the embodiment of the present invention, Fig. 5 (&) is a plan view, and Fig. 5 (b) is a cross-sectional view taken along line A-A. ^ 6 (a) and (b) show the schematic structure of a conventional wafer type capacitor. Description of component symbols: 1 Insulating substrate 1 A Opening of insulating substrate
第23頁 1254955 圖式簡單說明 1 B 第一支撐部 1C 第二支撐部 2 配線 201 圖案部 2 0 2 外部端子部 電解電容器元件) 3 電容器元件(鈕質固態 3 01 陽極 302 陰極 3 0 3 電介質(金屬燒結體) 4A 線狀導體 4B 導電性黏接劑 5 密封用絕緣體 6 焊錫保護膜 7 端子電鍍 8 導體膜 9 第一外部電極 10 第二外部電極 11、1 2導電構件 13 外殼 14 凹部 15 段部 16 陽極用導電體 17 陽極端子 18 陰極用導電體Page 231254955 Brief description of the drawings 1 B First support portion 1C Second support portion 2 Wiring 201 Pattern portion 2 0 2 External terminal portion electrolytic capacitor element) 3 Capacitor element (button solid state 3 01 Anode 302 Cathode 3 0 3 Dielectric (Metal sintered body) 4A Linear conductor 4B Conductive adhesive 5 Sealing insulator 6 Solder protective film 7 Terminal plating 8 Conductor film 9 First external electrode 10 Second external electrode 11, 1 Conductive member 13 Housing 14 Concave portion 15 Segment 16 anode conductor 17 anode terminal 18 cathode conductor
第24頁 1254955Page 24 1254955
第25頁Page 25
Claims (1)
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JP2002011301 | 2002-01-21 | ||
JP2002248829A JP2003283086A (en) | 2002-01-21 | 2002-08-28 | Wiring board, manufacturing method of the wiring board and electronic component using the wiring board |
Publications (2)
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TW200302496A TW200302496A (en) | 2003-08-01 |
TWI254955B true TWI254955B (en) | 2006-05-11 |
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TW092101292A TWI254955B (en) | 2002-01-21 | 2003-01-21 | Wiring board, method for manufacturing wiring board and electronic component using wiring board |
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US (1) | US7268408B2 (en) |
JP (1) | JP2003283086A (en) |
KR (1) | KR100980155B1 (en) |
SG (1) | SG118175A1 (en) |
TW (1) | TWI254955B (en) |
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JP4880433B2 (en) * | 2006-12-01 | 2012-02-22 | ニチコン株式会社 | Chip-shaped solid electrolytic capacitor |
JP2009038090A (en) * | 2007-07-31 | 2009-02-19 | Nichicon Corp | Chip type solid electrolytic capacitor |
US8023269B2 (en) * | 2008-08-15 | 2011-09-20 | Siemens Energy, Inc. | Wireless telemetry electronic circuit board for high temperature environments |
US8300387B1 (en) * | 2011-04-07 | 2012-10-30 | Avx Corporation | Hermetically sealed electrolytic capacitor with enhanced mechanical stability |
US8947857B2 (en) * | 2011-04-07 | 2015-02-03 | Avx Corporation | Manganese oxide capacitor for use in extreme environments |
KR102139763B1 (en) * | 2015-01-08 | 2020-07-31 | 삼성전기주식회사 | Multi-layered ceramic electroic components and mounting circuit thereof |
CN106571247B (en) * | 2015-10-08 | 2018-06-19 | 冠研(上海)专利技术有限公司 | The encapsulating structure of ultracapacitor |
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DE3823469A1 (en) * | 1988-07-11 | 1990-01-18 | Bodenseewerk Geraetetech | FILTER ARRANGEMENT |
US5177670A (en) * | 1991-02-08 | 1993-01-05 | Hitachi, Ltd. | Capacitor-carrying semiconductor module |
JP3143979B2 (en) | 1991-08-22 | 2001-03-07 | ソニー株式会社 | CCD shift register |
JP3541491B2 (en) * | 1994-06-22 | 2004-07-14 | セイコーエプソン株式会社 | Electronic components |
JPH09204945A (en) * | 1996-01-25 | 1997-08-05 | Mitsumi Electric Co Ltd | Double-surface chip jumper |
JP3346263B2 (en) * | 1997-04-11 | 2002-11-18 | イビデン株式会社 | Printed wiring board and manufacturing method thereof |
JP4000633B2 (en) * | 1997-08-25 | 2007-10-31 | 株式会社デンソー | Wiring board manufacturing method |
JP2000013017A (en) * | 1998-06-23 | 2000-01-14 | Shin Etsu Polymer Co Ltd | Manufacture of flexible wiring board |
JP3495917B2 (en) * | 1998-07-15 | 2004-02-09 | 日本特殊陶業株式会社 | Multilayer wiring board |
US6586835B1 (en) * | 1998-08-31 | 2003-07-01 | Micron Technology, Inc. | Compact system module with built-in thermoelectric cooling |
JP2000182871A (en) * | 1998-12-17 | 2000-06-30 | Tdk Corp | Chip inductor and manufacture thereof |
JP2000189768A (en) | 1998-12-28 | 2000-07-11 | Toyobo Co Ltd | Cleaning method of membrane module |
JP3744731B2 (en) * | 1999-06-17 | 2006-02-15 | 京セラ株式会社 | Wiring board manufacturing method |
US6617681B1 (en) * | 1999-06-28 | 2003-09-09 | Intel Corporation | Interposer and method of making same |
JP3838827B2 (en) * | 1999-10-05 | 2006-10-25 | 新光電気工業株式会社 | Thin film capacitor element and printed circuit board manufacturing method |
JP2001196770A (en) * | 2000-01-12 | 2001-07-19 | Omron Corp | Control unit |
JP2001244376A (en) * | 2000-02-28 | 2001-09-07 | Hitachi Ltd | Semiconductor device |
US6469259B2 (en) * | 2000-02-29 | 2002-10-22 | Kyocera Corporation | Wiring board |
JP2001267181A (en) * | 2000-03-21 | 2001-09-28 | Hitachi Aic Inc | Chip type solid electrolytic capacitor |
JP2001307923A (en) * | 2000-04-24 | 2001-11-02 | Hitachi Ltd | Lc filter |
JP2002043710A (en) | 2000-05-15 | 2002-02-08 | Hitachi Aic Inc | Printed wiring board and method for manufacturing the same |
JP4075306B2 (en) * | 2000-12-19 | 2008-04-16 | 日立電線株式会社 | Wiring board, LGA type semiconductor device, and method of manufacturing wiring board |
US6509530B2 (en) * | 2001-06-22 | 2003-01-21 | Intel Corporation | Via intersect pad for electronic components and methods of manufacture |
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2002
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- 2003-01-20 KR KR1020030003595A patent/KR100980155B1/en not_active IP Right Cessation
- 2003-01-21 SG SG200300126A patent/SG118175A1/en unknown
- 2003-01-21 TW TW092101292A patent/TWI254955B/en not_active IP Right Cessation
- 2003-01-21 US US10/348,478 patent/US7268408B2/en not_active Expired - Fee Related
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US20030178713A1 (en) | 2003-09-25 |
JP2003283086A (en) | 2003-10-03 |
SG118175A1 (en) | 2006-01-27 |
KR20030063201A (en) | 2003-07-28 |
TW200302496A (en) | 2003-08-01 |
US7268408B2 (en) | 2007-09-11 |
KR100980155B1 (en) | 2010-09-03 |
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