TWI244799B - Miniature RF and microwave components and methods for fabricating such components - Google Patents

Abstract

RF and microwave radiation directing or controlling components are provided that may be monolithic, that may be formed from a plurality of electrodeposition operations and/or from a plurality of deposited layers of material, that may include switches, inductors, antennae, transmission lines, filters, hybrid couplers, antenna arrays and/or other active or passive components. Components may include non-radiation-entry and non-radiation-exit channels that are useful in separating sacrificial materials from structural materials. Preferred formation processes use electrochemical fabrication techniques (e.g. including selective depositions, bulk depositions, etching operations and planarization operations) and post-deposition processes (e.g. selective etching operations and/or back filling operations).

Description

1244799 发明 Description of the invention: Technical field to which L invention belongs 3 Related applications This application requests US Patent Application No. 5 10 / 607,931 filed on June 27, 2003; and US Patent Application filed on June 6, 2003 Case 60 / 476,554. Both applications are incorporated herein by reference in their entirety. FIELD OF THE INVENTION Embodiments of the present invention relate to the field of electrical devices and manufacturing methods thereof, and specific embodiments relate to radio frequency and microwave devices and manufacturing methods thereof. More specific embodiments of the present invention relate to small radio frequency and microwave devices (such as filters, transmission lines, delay lines, and the like) that can be manufactured at least in part using a multilayer electrodeposition technique known as electrochemical fabrication. L. iltr -iiL Jt 15 BACKGROUND OF THE INVENTION A technology for forming three-dimensional structures (such as elements, components, devices, and the like) from a plurality of adhesive layers was invented by Adam L. Cohen and is known as electrochemistry Manufacturing. It was purchased from MEMGen® Corporation in Bobbock, California under the EFAB ™ name. This technique is described in US Patent No. 6,027,630, issued February 20, 2000. This electrochemical deposition technology can utilize a unique mask technology to selectively deposit a material. The mask technology includes the use of a mask that includes a support structure that is separate from the substrate to be plated. Patterned attachable material. When it is necessary to perform an electrodeposition by using the cover, a cover solution is brought into contact with a substrate while a plating solution is present, so that the contact effect of the attachable portion of the cover to the substrate is suppressed. Deposition at selected locations. For convenience, these masks may be generically referred to as an attachable contact mask; this mask technology may be generically referred to as an attachable contact mask plating process. More specifically, in the language of MEMGen® Corporation in Bogok, California, these masks are known as INSTANT MASKS ™ and this procedure is known as INSTANT MASKINGtn ^ INSTANT MASK ™ plating. Selective deposition systems using adherent contact mask plating can be used to form single layer materials or can be used to form multilayer structures. The disclosure of the '630 patent is incorporated herein by reference in its entirety. Since the submission of the patent application for the above patents, a number of documents regarding attachable contact mask plating (ie, instant MASKING) and electrochemical manufacturing have been disclosed: (1) Kong En, Zhang, Zeng, Man Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Frodis and P. Will, 15 "EFAB: Functionally compact with small size characteristics Batch Production of Metal Components ", Proceedings of the 9th Solid Freeform Fabrication Conference, University of Texas at Austin, Ding, pi61, August 1998. (2) Conn, Zhang, Zeng, Mansfield, Frody, and Will (A. Cohen, 20 G. Zhang, F. Tseng, F. Mansfeld, U. Frodis, and P. Will), "EFAB "Fast and Low-cost Desktop Micro-machining of Real 3-D MEMS with High Size." Proceedings of the 12th IEEE MEMS Symposium, IEEE, p244, January 1999. (3) Cohen, "3-D Micromechanics with Electrochemical Manufacturing 1244799 2. Micromachine Devices; March 1999. (4) Zhang, Kong En, Fuluo Di, Zeng, Mansfield and Will (0,21 ^ 1 ^, A. Cohen, U. Frodis, F. Tseng, F. Mansfeld & Pe Will), "EFAB: The Fast of Real 3-D Microstructures "Desktop Manufacturing", Proc · 2nd International conference on Integrated MicroNanotechnology for Space Applications, Proceedings of the 2nd International Conference on Integrated MicroNanotechnology for Space Applications, The Aerospace Co., April 1999. (5 ) Zeng, Frody, Zhang, Kong En, Mansfield and Will (F.Tseng, U. Frodis, G. Zhang, A. Cohen, F. Mansfeld and P. Will), "EFAB: 10 Use High-size-ratio arbitrary 3-D metal microstructures with low-cost automated batch procedures, "3rd International High-size-ratio Microstructure Technology Symposium (HARMST, 99), June 1999. (6) Korn, Fowler Cohen, U. Frodis, F. Tseng, G. Zhang, F. Mansfeld and P. Will, 15 "EFAB: Any 3- D Low-cost automated electrochemical batch manufacturing of microstructures ", Micromachining and Microfabrication Process Technology, SPIE 1999 Symposium on Micromachining and Microfabrication, 1999 September. 20 (7) Zeng, Zhang, Frody, Conn, Mansfield and Will (F. Tseng, G.

Zhang, U. Frodis, A. Cohen, F. Mansfeld, and P. Will), "EFAB: High-size-ratio arbitrary 3-D metal microstructures using low-cost automated batch processes", MEMS Symposium, ASME 1999 International Mechanical Engineering Conference and Exhibition (ASME 1999 International Mechanical 1244799

Engineering Congress and Exposition), November 1999. (8) A. Cohen, "Electrochemical Manufacturing (EFABTM)," Chapter 19 of the MEMS Handbook, edited by Mohamed Gad-El-Hak, CRC Press, 2002 〇5 (9) "Microfabrication-Rapid Prototyping's Keller Application", pages 1 to 5 of the Rapid Prototyping Report, CAD / CAM Publishing, Inc., June 1999. These nine The disclosure of one public document is incorporated herein by reference in its entirety. 10 The electrochemical deposition process can be performed in a number of different ways as described in the above patents and publications. In one form, this process is included in the generation of each layer structure to be formed Three separate operations are performed during this period: 1. Selectively deposit at least one material by electrodeposition on one or more required areas of a substrate. 15 2. Then, blanket deposit at least one additional by electrodeposition. Material so that additional deposits cover the area that was previously selectively deposited and the area of the substrate that did not receive any previously applied selective deposits 3. Finally, the material deposited during the first and second operations Flattening to produce a flat surface with the required thickness of the first layer and having at least 20 areas containing at least one material and at least one area containing at least one additional material. After the first layer is formed, one or more An additional layer can also be formed on the immediately preceding layer, nM, and adhere to the flat surface of the previous layer. These additional layers are formed by repeating the first to third operations, or each of them, in which each subsequent 1244799 The formation of the layer is based on the starting material. A new and thicker substrate is used to treat the previously formed layers and the first day. After all the layers are completed, it is summarized by-remaining at least a part of 5 10 kg-product material. Divided into three-dimensional structure. 4 Select the desired shape—selective electrodeposition included in the operation—turn-over solution curtain plating. In this type of plating, the method is based on the applicability. Contact (CC) mask. The CC mask consists of—or is attached to or formed on—a patterned, attachable medium and a mosquito cross-section of the plating material to be used for each mask. : Based on the finalization. CC material is given to the material of each reading. At least one-The support used for the CC cover is usually a plate-like structure formed by selecting the electric iron that will dissolve the material to be plated and the _-shaped domain. In this way, the support will be in a Used as an anode in the keying procedure.-Instead of the 'in-diameter' support, it can be another-a porous or other perforation that allows the deposit to pass through during the operation of a key = the distal anode to the deposition surface Regardless of the approach, the CC screen may share two common supports, that is, the 20 patterns of the attachable dielectric material used for the mineral-clad multilayer material may be positioned in different regions of a single support structure. When a single support structure contains multiple plating patterns, the overall structure is called an acc screen and each plating screen can be called a "second screen." In the current application, it is only made when it is related to a specific point. This difference. 'In order to prepare for the first selective deposition, the cc mask's 1244799 5 can be aligned and pressed against the base on which the deposition can take place. 8: points (or-previously formed layers or -Layer-The previous deposition of the mask ^ and the combination of the substrate pressure occurred in such a way that the cc = part of the curtain can contain «solution. The material which is connected to the substrate curtain is based on the product as Barrier, and the opening in the CC hood filled with == liquid is used as a suitable potential and / or electric core to transfer the material to the non-contact part of the substrate (during operation) As the cathode). 10 15 Examples of CC screens and cc screens are shown in the figure below. The first figure shows-patterned on-anode 12-can be attached or deformable (such as Elastomer) Side view of cc cover 8 composed of insulator 10. The anode has two functions. Section 1A Also described will be-the substrate 6 separated from the mask 8. The mouth can be a pattern with topological complexity (for example, including an island of isolated insulator material). One of its functions is to support the patterned insulator 10. Materials to maintain their integrity and alignment. Another feature is to be used in power mining operations

Of the anode. CC screen plating is performed by simply pressing the insulator against the substrate and then electrodepositing the material into the insulator through the openings 26a and 26b to make the material 22

Optionally deposited on a substrate 6 as shown in Figure 1B. After deposition, it is preferred that the CC mask be separated from the substrate 6 in a non-destructive manner. As shown in Figure 1C, the cc mask cladding procedure and the "through-throttle mask (thr0Ugh_mask)" are different. The reason is that in the through-mask plating process, the separation of the mask material from the substrate will occur in a destructive manner. Like the through-mask plating, the CC mask plating selectively and simultaneously deposits the material over the entire layer. The plated area can be composed of one or more isolated plated areas, where these isolated plated areas 11 1244799 domains can belong to a single structure formed or can belong to a simultaneous structure. Thanks to the CC cover, since the individual covers The screen has not been deliberately destroyed, and it can be used in multiple ore cover operations. &Amp; Another example of a display object covered by the CC cover screen and the cc cover clock in the sequence. 苐 m image display-anode 12 Separate from the cover screen 8, the cover screen 8, including a patterned material 1G, and the cut-off age _ also describes the separation of the base material 6 and the cover screen 8. The 1E_ shows the cover screen 8, Contact the substrate 6. The cap does not conduct a current from the anode 12 to the deposit 10 generated by the substrate

twenty two,. The figure shows the sediment 22, which is located on the substrate 6, after separation from the mask 8. In this example, an appropriate electrolyte is positioned between the substrate 6 and the anode η, and the ion current from one or both of the solution and the anode is conducted through the opening in the mask; to the place where the material is deposited Of the substrate. This type of screen can be called an anodized mSTANT MASK (na) or an anodically attachable contact (ACC) screen. 15 Unlike the penetrating cover, the CC cover can cover the cc cover as

It can be completely separated from the manufacturing of the substrate on which it is plated (eg, separated from a three-dimensional (3D) structure formed). The qCC ^ curtain can be formed in many different ways, for example, a photolithography process can be used. All masks can be produced simultaneously before the structure is manufactured, rather than during manufacture. This separation can have a simple, low-cost, self-contained "desktop factory" that is self-contained and clean inside, and it can be installed in almost any place to make 3D structures, and it can clean any required The room procedure is left to the service authority or a similar unit. An example of the above-mentioned electrochemical pre-manufacturing procedure is shown in the figure. Some figures show that the procedure includes the deposition of a material that is a sacrificial material m 12 1244799 and a structure that is structural The second material of the material 4. The CC cover 8 in this example includes a patterned attachable material (such as an elastomeric dielectric material) 10 and a support member 12 made of a deposition material 2. The cc cover The attachable portion is pressed against the substrate 6 and a plating solution 14 is located in the opening 5 16 in the attachable material 10. A current from the power supply 18 is then doubled as an anode via (a) The supporting members 12 and (1)) double as a cathode substrate 6 and pass through the plating solution 14. Figure 2A shows that the passage of current will cause the materials in the plating solution and the materials from the anode 12 2Selective transfer and plating on the overcast 6. After the first deposition material 2 is plated on the substrate 6 using the CC mask 8, the cc mask 8 φ 10 is removed as shown in Figure 2B. Figure 2C depicts the blanket deposition (ie Non-remote selective deposition) A second deposition material 4 above the previously deposited first deposition material 2 and above the alpha trowel of the substrate 6. It is passed through an anode (not shown) made of the second material. An appropriate plating solution (not shown) is applied to the cathode / substrate 6 to perform blanket deposition. Subsequently, the entire two material layers are planarized to achieve the thickness and flatness of the fork, as shown in Figure 2d. After repeating this procedure for all layers, the multilayer structure 20 formed by the second material 4 (ie, the structural material) is embedded in the first material 2 (that is, the sacrificial material) φ, as in Section 2E. As shown in the figure. The embedded structure is etched to produce the required device, that is, structure 20, as shown in Figure 2F. Various components of an exemplary artificial electrochemical manufacturing system 32 are shown in the first 3A-3C. Fig. System 32 consists of several sub-systems%,%, 38 and 40. Basic material The holding system 34 is depicted in the upper part of Figures 3A to 30 and includes several components: (1) a carrier 48, (2) a metal substrate 6, on which a layer is deposited, and (3) a linear slider 42, which can respond to the driving force from the actuator 44 to move the base 13 ^ 44799 5 10 15 20 _ head up and down for the vehicle 48. The next summer measurement base bismuth + + 4 also includes an application such as The difference in the vertical position of the substrate means ㈣46, which is used for-layer thickness and / or deposition thickness. Sub-system 34 :,-or block foot and it can be installed on the money "36." A few scenes of Yu Yu wearing (22 ::: =-precision v, (4) frame 72, which can also include two Γ58 ^ in the electrical connection of the electrolysis f 16 ° secondary system纟 to—appropriate power source to drive the electrical connection (not shown) of Tachida of the CC curtain program. The component blanket system 38 is located in the lower part of Figure 3B and includes ㈣. ()-% Pole 62 '( 2) An electrolyte storage tank 64, Γ ′, and (3) a frame 74 on which sub-systems can be seated. Two packs are used to connect the anode to a suitable power supply unit. Appropriate electrical connection (not shown). The planarization sub-system 40 is located in the lower part of Figure 3C and includes a grinding plate 52 and related operations and controls for planarizing the sediment (not shown). Picture). In addition to exposing the use of CC screens for plutonium deposition applications, 63 (m | the case also «can place the CC screen against the substrate and the voltage pole = turn 'can be used to remove the substrate Selective removal of materials. It has been shown that such removal procedures can be used to selectively polish substrates such as trim panels. Another is to form microstructures from electro-money metals (even if it is chemically modified)

14 1244799 (manufacturing technology) method was disclosed to Henry Guckel under the name "Micro-structure formation method using multi-level deep x-ray lithography by sacrificing metal layers," U.S. Patent 5, No. 190,637. This patent discloses the use of mask exposure to form a metal structure. The first layer of main metal is plated on an exposed substrate 5 to fill a gap in a photoresist, and the photoresist is removed and the photoresist is removed once. The metal money is required to be above the first layer and above the clock-covered substrate. The exposed surface of the secondary metal is subsequently reduced by machining to a level where the first metal can be exposed to produce an extension across the primary and secondary metals. A flat and uniform surface. Then a photoresist layer is first applied on top of the first layer and then the process of generating the first layer by 10 is repeated to start the formation of the second layer. This process is then repeated until the overall structure is formed and Until the secondary metal is removed by etching. The photoresist is formed by casting over the plating substrate or front layer, and is formed by exposing the photoresist through a patterned mask through X-ray or ultraviolet radiation. 15 Electrochemical manufacturing provides the ability to form prototypes and commercial quantities of small objects (such as meso- and small-sized objects), components, structures, and the like at reasonable cost and time. In fact, electrochemical Manufacturing is an enabling factor that can form many structures that have not been manufactured so far. Electrochemical manufacturing has opened new designs and product lines in many industrial fields. Even if electrochemical 20 manufacturing provides such new capabilities and understands electrochemical Manufacturing technology can be combined with known designs and structures in different alkaloids to create new structures. The specific applications of electrochemical manufacturing in the prior art aspects of specific application areas provide designs that are unknown or not yet apparently known, Structure, capability, and / or characteristics. In the field of electrical components and systems, and especially in the field of RF and microwave components and systems 15 1244799, there is still a need to have reduced size, reduced manufacturing costs, increased reliability, and different frequency ranges. Application and / or other enhanced features and similar devices. [Summary] 5 Summary of the Invention One of the objects of the various aspects of the present invention is to provide a radio frequency component having a reduced size. One of the objects of the various aspects of the present invention is to provide a radio frequency component having a reduced manufacturing cost. 10 One of the objects of the various aspects of the present invention is To provide a radio frequency component with improved reliability. One object of various aspects of the present invention is to provide a radio frequency element having design characteristics that make it suitable for use in more frequency bands. One object of various aspects of the present invention is to provide Radio frequency components with enhanced capabilities that can provide enhanced capabilities such as greater than 15 Lai wide. Those skilled in the art can understand the other purposes and advantages of the various forms of the present invention through the disclosure of this document. Expressly stated herein or may be disclosed by this document to other The various forms of the invention identified in the manner can solve any of the above-mentioned objectives individually or in combination or may not solve any of the above-mentioned objectives but solve some of the other objectives identified by the disclosure herein. It is not intended to address all of these objectives with a single form of the invention, even though some forms may be so. A first aspect of the present invention provides a coaxial RF or microwave component for guiding or controlling radiation, which includes: at least one RF or microwave radiation in a conductive structure entering a port; at least one RF or microwave in a conductive structure Leaving the 1244799 port; at least-the channel, which is generally defined by the conducting structure on the side, and the radio frequency or microwave radiation passes through the conducting structure when it migrates from the at least-entering port to at least one leaving the bee;-the central conductor, which follows A length of at least one-to-one extending from entering into leaving 璋; and wherein the conductive structure includes one or more openings extending from channel 5 to an outer region, wherein the openings have a wavelength not greater than 1/10 or double The larger of the micrometers is dimensioned and is not intended to pass significant radio frequency light emissions. A second aspect of the present invention provides a method for manufacturing a micro-device, the method comprising: depositing a plurality of adhesive layers of materials, wherein depositing 10 materials of each layer includes depositing at least one first material; depositing at least one second material; And removing at least a portion of the first or second material after depositing a plurality of layers; a structure produced by the deposition and removal in the complex provides at least one structure that can be used as a microwave control, guidance, sending or receiving member And includes at least-radio frequency or microwave radiation entering the port in the 1-conductor structure; conduction structure 15 at least-radio frequency or microwave light exiting the port; at least one channel, which is generally limited by the conductive structure on the side, radio frequency or microwave light radiation When moving from at least one advance to at least one exit, it passes through the conductive structure; a central conductor that extends along at least a channel of a length from the entry port to the exit port; 20 = where the conductive structure includes an extension from the channel One or more of the openings or middle openings in an outer region have a length of 1/1 () or 2 () suction # which is relatively large in size and is not intended to pass significant radio frequency radiation. The first-type.% Of the human hair month provides a four-port hybrid coupler, the package of which has four micro-small pieces with multiple adhesive layers of materials, the first four of the same pieces of extension Between the two ports, the second one of JL coaxial element 17 1244799 extends between the other two of the four ports, and the remaining two coaxial components extend between the first and second coaxial components. At least a part of the at least one coaxial element of the length is arranged in a meandering form. A fourth aspect of the present invention provides a manufacturing method of a circuit for supplying signals to N antenna elements of a passive 5 array to generate a plurality of beams. The method includes: depositing a plurality of adhesive layers to form (N / 2) log2N four-port hybrid couplers, each of which includes four micro-miniature coaxial elements, wherein each coaxial element extends between an individual pair of ports of the hybrid coupler to couple a pair of coaxial elements to each port; and At least a part of the hybrid coupler is connected to other couplers via a phase shift 10 member to form a Butler matrix. The fifth aspect of the present invention provides a N-type for supplying signals to a passive array. The antenna is used to generate a Butler matrix of a plurality of beams, and it includes (N / 2) log2N quadrupole hybrid couplers and each four-port hybrid coupler includes four 15 micro-miniature coaxial elements, the first extension of the four coaxial elements Between the two of the mixed four ports, the remaining two coaxial components extend between the first and second coaxial components, at least a portion of at least one of the coaxial components is arranged in a meandering length. . One aspect of the present invention provides a micro-miniaturized RF or microwave coaxial structure 20 including an inner conductor, the inner conductor having an axis substantially coaxial with an outer conductor axis, wherein the inner and outer conductors are separated from each other by a dielectric. The gap, where the smallest cross-sectional dimension from an inner side wall of the outer conductor to an opposite inner side wall of the outer conductor is less than about 200 microns. In a specific variation of this aspect of the invention, the outer conductor has a substantially rectangular cross-sectional configuration. 1244799 5 10 15 20 A type of the present invention provides a coaxial RF or microwave component that preferentially passes a Koda shot located in an ideal frequency band, including: a conductive structure to J-RF or microwave radiation entering a port; conduction At least _ radio frequency or microwave light exits the port; at least-the channel, which is generally limited by the transmission structure on the side, and the radio frequency or microwave radiation moves from at least one entry port to the evening-when it leaves the port, it passes through the conduction Structure;-a central conductor that extends along at least one channel from the entry port to the exit port; and at least one conductive spoke that extends between the central conductor and the conductive structure at each of a plurality of locations, where in the 忒 channel For a frequency that can pass through a component, successive positions along the length of the channel are separated by approximately one-half of a propagation wavelength or an integer multiple thereof "in one or more of the following conditions: (1) the central conductor, the conductive structure, and the ¥ Round wheels are monolithic (monolith⑹, ⑺ for the channel that is perpendicular to the light emission propagation direction of the channel _ cross-section size is less than about 丄 millimeters, more profuse: about 0.5 Mm and preferably less than about 0.25 mm, (3) greater than about 50%, taxi: 'filled with a gaseous media, more preferably greater than about 70% of the channel is filled with holes ~, media, preferably greater than about 9Q% of the channels are filled with-gaseous media, at least-part of the conductive part of the file is formed by-electrodeposition process,) at least _ part of the conductive part of the component is composed of a plurality of successively deposited layers f ,, ( 6) At least-part of the channel has a substantially rectangular shape, and at least part of the head body has a-almost rectangular shape, which passes through both: a two-dimensional nonlinear path extends, and the channel extends along a three-dimensional path.

Shen '(10) aisle includes at least one m A 3 song & and one side of the aisle in the help zone has — nominally smaller than the opposite side of the aisle in the bend zone — and is provided with Wei Gao Xiaomei ’s Table Dragon Part I, (11) Conduction junction 19 1244799 is constructed in multiple positions with pathways, where the electric field on one surface of the conduction structure (if there is envy) will be less than Its maximum value in the channel is 20%, more law is less than 10% of its maximum value in the channel, even better than less than 5% of its maximum value in the pass, the best of which the electric field is approximately zero, (12) 5 The conductive structure is provided with patches of different conductive materials at one or more locations, where the electric field (if any) on the surface of the conductive structure will already be less than 20% of its maximum value in the channel, More preferably, it is less than 10% of its maximum value in the channel, even more preferably less than 5% of its maximum value in the channel. The optimal electric field is approximately zero, and (13) is between 60 and 60. With 12〇. The angles between the channels are at least part of the joints. Miter corners are used, and / or (14) the conductive spokes are separated by an integral multiple of half the wavelength and located on the central conductor of a bulge or extending from the conductive structure. The bulging portion extends into the channel at a position that is lightly separated from the conductive wheel by approximately-an integer multiple of a half wavelength-or more. The model of the month provides a coaxial RF or microwave component that preferentially passes a light beam located in an ideal frequency band, including:-at least one of the conductive structure-RF or microwave light is emitted into the human body; at least one of the conductive structure Shoot 20: = wave ,, port; at least one channel, which is generally passed on the side. Limited by radio frequency or microwave _ from at least _ into the path, or to; a pass to extend; and in the path along a length of the pass: of: "solid position,-for the material root section from along the-length The extension of the position of the two-pass question, one of the segments has an inductive property and the other-a root-capacity property ', and each of them extends to the "passage 20 1244799 in a closed path extending from the channel_side", where in the channel for the available The component passes through one frequency, and the continuous position along the length of the channel separates approximately a quarter of a propagation wavelength-or an integer multiple thereof, where one or more of the following conditions are met: ⑴ The central conductor, conductive structure, and conductive root segment are monotonic The cross-sectional dimension of a channel that is perpendicular to the direction of the X-ray transmission through Tong 5 is less than about 1 mm, more preferably less than about 0.5 mm, and most preferably less than about 0.25 mm, ( 3) More than about 50% of the channels are filled with _ gaseous media, more preferably more than about 70% of the channels are filled with gaseous media, and most preferably more than about 90% of the channels are filled with gaseous media, (4) the conductive part of the component At least part of the process is performed by a stack of sedimentary processes 1 Formed by 0, (5) at least a part of the conductive part of the member is formed by a plurality of successively deposited layers, (6) at least a part of the channel has a generally rectangular shape, and at least a part of the central conductor has a substantially rectangular shape The shape '(8) channel extends along a two-dimensional non-linear path, (9) channel extends along a three-dimensional path, (10) the channel includes at least one curved region, and a side wall of 15 迢 in the curved region has A nominally smaller radius than one of the opposite sides of the channel in the curved area and a plurality of surface oscillating portions having a smaller radius. (11) The conductive structure is provided with a path at one or more locations, where The electric field (if any) on a surface of the conductive structure will already be less than 20% of its maximum value in the channel, more preferably less than 10% of its maximum value in the channel, and even more preferably less than 20% 5% of the maximum value in the channel, where the electric field is almost zero. (12) The conductive structure is provided with patches of different conductive materials at one or more positions. The electric field on the surface of the conductive structure (if there is if) Will be less than 20% of its maximum value in the channel, more preferably less than 10% of its maximum value in the channel, even more preferably less than 5% of its maximum value in the channel, and up to 1244799. Zero, (13) use miter corners at least part of the joints for channel segments that meet at an angle between 60 ° and 120 °, and / or (14) the quarter roots separate the quarter wavelength The bulge on the central conductor or the bulge extending from the conductive structure is extended into the channel at one or more positions separated from the root of the 5th conductor by an integer multiple of approximately half the wavelength. An aspect of the invention provides a coaxial RF or microwave component for guiding or controlling radiation, comprising: at least one RF or microwave radiation in a conductive structure entering a port; at least one RF or microwave radiation in a conductive structure 10 exiting至少; at least one channel, which is generally defined on the side by a conductive structure, and when radio frequency or microwave radiation moves from at least one entry port to at least one exit port, it passes through the conductive structure, a central conductor The entry port to the exit port extend along at least one channel of a length; and a branch in the channel below which a branch of the central conductor 15 can pass and wherein the central conductor is short-circuited with respect to the conductive structure, and where at least one The following conditions are satisfied: (1) the branch of the central conductor, the conductive structure surrounding the branch, and a short-circuit position between the central conductor and the conductive structure are monotonic; (2) at least a part of the central conductor or conductive structure includes The material formed by the plurality of connected deposition layers and / or (3) at least a portion of the central conductor or the 20 conductive structure includes a material formed by a plurality of electrodeposition processes. A form of the present invention provides a coaxial RF or microwave component for guiding or controlling radiation, which includes: at least one RF or microwave radiation in a conductive metal structure entering a port; at least one RF or RF in a conductive metal structure 1244799 Microwave radiation leaves the port; at least one channel, which is generally defined on the side by a conductive metal structure, and when radio frequency or microwave radiation moves from at least one entry port to at least one exit port, it passes through the conductive metal structure; One of the following conditions: (1) at least a portion of the conductive metal structure includes a metal formed by a plurality of 5 electrodeposition operations, and / or (2) at least a portion of the conductive metal structure includes a plurality of continuous deposited layers One of the metals formed. A form of the present invention provides a coaxial RF or microwave component for guiding or controlling radiation, which includes: at least one RF or microwave radiation in a conductive metal structure entering a port; and at least one channel on a side Approximately 10 is defined by a conductive metal structure, and radio frequency or microwave radiation passes through the conductive metal structure when moving from at least one entry port; and at least a portion of the metal structure includes a plurality of electrodeposition operations and / or a plurality of continuous sinking operations. A metal formed by lamination. A form of the present invention provides a coaxial 15-axis radio frequency or microwave component for guiding or controlling radiation, which includes: at least one radio frequency or microwave radiation entry port and at least one exit port in a conductive metal structure; and at least one A channel, which is generally defined on the side by a conductive metal structure, and that radio frequency or microwave radiation passes through the conductive metal structure as it travels from at least one entry port; and at least one branch path along at least one channel, which surrounds the channel The conductive metal junction structure and the path from a branch region of the channel immediately adjacent to the path are monotonic. In a specific variation of each aspect of the present invention, the production process includes one or more of the following operations: (1) Selective electrodeposition of a first conductive material and electrodeposition of a second conductive material, wherein the first or second conductive material One of the materials is a sacrificable material of 1244799 and the other is a structural material. Ten, (2) Electrodeposited a first conductive material, and selectively carved the first structural material to generate at least one void, a thunder Depositing a second conductive material to fill the at least -outer, gap, and (3) the electro sink sinks a conductive material, deposits at least one flowable dielectric, crystalline layer of conductive material to prepare the formation of the next and 'Electron-Seed Remote Selective Electrodeposition of a First Conductive Material, Miao (} ,,,,, 4] Electrodeposit a Second Conductive Material, and then Selectively Carve One of the First or Second Value V Materials, A narrow conductive mine deposits a third conductive material, wherein at least one of the first, second, or third materials is a sacrificial material and the remaining two materials are 10 materials, and at least one is a structural material. The present invention In another specific variation of various types of sadness, The process includes one or more of the following operations: (1) separating at least one sacrificial material from at least one of the ~ structural materials; (2) from (a)-the second sacrificial technical material and (b) at least one structure Sex material 15

Material-sacrifice a first-sacrifice material to create a void, and then fill at least a portion of the void with a -dielectric material, and then separate the second sacrificial material from the structural material and the dielectric material; and / or (3) A void in the structural material is filled by a magnetic or conductive material embedded in the flowable dielectric material, and then the dielectric material is solidified. In another specific variation of the various forms of the present invention, the component includes the following 20 columns or a micro coaxial component, a transmission line, a low-pass filter, a Shang-pass filter, a band-pass filter, a reflection-based Filter, a suction-based filter, a leaky wall filter, a delay line, an impedance matching structure for connecting other functional components, a directional coupler, a power combiner (such as Wigginson ( Wilkinson)), a power splitter, a mixed 24 1244799 synthesizer, a magic TEE, a frequency multiplexer, or a frequency demultiplexer, a pyramidal (i.e., smooth wall) feeder antenna, and / Or a scaly (corrugated wall) feeder antenna. An aspect of the present invention provides an electrical device, which includes: a plurality of layers of continuously deposited material, wherein the pattern generated by the deposition provides at least one structure that can be used as an electrical device. One aspect of the present invention provides a method for manufacturing a radio frequency device. The method includes: depositing a plurality of adhesive layers of materials, wherein the deposition of each layer of materials includes selectively depositing at least one first material; depositing at least one second material 10 Material; and planarizing at least a second material; and planarizing at least a portion of the deposited material; removing at least a portion of the first or second material after the plurality of layers are deposited; and depositing and removing a structural pattern produced At least one structure is provided that can be used as an electrical device. One aspect of the present invention provides a method for manufacturing a microdevice. The method 15 includes: depositing a plurality of layers of adhesive material, wherein the deposition of each layer of material includes depositing at least one first material; depositing at least one second material; At least a portion of the first or second material is removed after the plurality of layers are deposited; wherein a structure produced by the deposition and removal provides at least one structure that can be used as: (1) a toroidal inductor, ( 2) —switch, (3) —spiral inductor 20, or (4) an antenna. One aspect of the present invention provides an apparatus for manufacturing a microdevice, comprising: a component for depositing a plurality of materials for an adhesive layer, wherein the deposition of each layer of material includes using a device for selectively depositing at least one first A part of a material; a part for depositing at least a second material; and a part for removing at least one part of a first elder brother material after the deposition of a plurality of layers of 25 1244799 5 10 15 The component system produced by the deposited hemp in the core material removal phase is available for the following items: .e, sa ,,,, and ϋ. (1) a toroidal inductor 叩 '⑺- 开关' (3 卜 helix Inductors, or brackets. The present invention provides a type of micro-toroidal inductor, which includes a plurality of conductive loops from the shape of a to the shape of a to form a toroidal pattern. Element, in which the toroidal pattern has an inner diameter and an outer diameter, and at least a part of the Bayi knife having a plurality of loops has a greater cross-section at the outer diameter than at the inner diameter. Sectional dimensions. The -type system of the present invention provides-a kind of micro Line, part of the antenna with the base material. 毛 This Maoming-type system provides a manufacturing method of radio frequency arrangement, which includes: depositing a plurality of adhesive layer materials, in which the material of each layer is deposited. Contains selective deposition of at least one first material; deposition of at least one second material; at least-part of a surface material; deposition of multiple layers shows:-or at least a part of a second material; and deposition and removal of produced A structural diagram of ㈣ provides at least one structure that can be used as a radio frequency device.

Those skilled in the art can understand from the disclosure herein that further embodiments of the present invention and other forms of the present invention may include the combination of the above-mentioned plastic forms of the present invention and / or various characteristics of the external force port or multiple embodiments. The other forms of the present invention can be used to spiritually implement one or more of the above-mentioned methods for shaping the apparatus. The other forms of the present invention can provide a variety of different structural, functional relationships, and those not specifically described above. program. 26 1244799 Schematic illustrations 1A-1C schematically depict side views of the various stages of a CC mask plating process, and FIGS. 1D-1G schematically depict a CC using a different type of CC mask Side views of various stages of the mask plating process; Figures 2A-2F schematically depict side views of various stages of an electrochemical manufacturing process applied to form a specific structure, in which a structural deposit is deposited on the blanket Selective deposition of a sacrificial material at the same time as the material; Figures 3A-3C schematically depict the side view 10 of various different sub-assemblies that can be used to manually implement the electrochemical manufacturing method depicted in Figures 2A-2F; Figures 4A-4I schematically depict a structure using adhesive masks to form a first layer, in which a blanket deposit of a second material is spread over the opening between the deposition locations of the first material and the first material Itself; Figure 5A depicts a three-dimensional view of a coaxial filter element including a shorted spoke; Figure 5B depicts a plan view of the coaxial filter of Figure 4A along lines 5B-5B; Figure 5C depicts the coaxial filter of Figure 4A along Plan of line 5 (c) -5 (c) Figure 5D depicts a plan view of the central portion of a coaxial filter element, showing five sets of filter spokes (two in each group) along the length of the filter; Figures 6A-6C depict each of the spoke groups used (four in each group) Spokes) end views of rectangular, circular and oval filter elements; Figures 7A-7D depict examples of alternative spokes 1244799 configurations that may be used in filter components; Figures 8A and 8B show curved coaxial filter components 3D views; Figures 9A-9C depict alternative coaxial filter members using protrusions along the inner or outer conductor to help filter signals; 5 Figure 9D depicts a plan view of the central portion along the length of an S-shaped two-pole coaxial filter; Figures 10A-10D depict plan views along the central portion of a horseshoe-shaped coaxial transmission line with varying degrees of mitre; Figures 11A and 11B depict plan views along the central portion of a coaxial transmission line and a coaxial 10 filter member, respectively, where the coaxial The wavy oscillating portion is included on the inside surface of the smaller radius side of the line; Figure 12A depicts a linear tripolar bandpass coaxially formed along the root segment pair to form one of the poles Plan view of the central portion of the length of the filter (viewed from above); Figure 12B depicts the end view of the filter of Figure 12A, which shows the rectangular configuration of structure 15; Figure 12C depicts the bend along a rooted support Plan view of the central portion of the length of a three-pole bandpass coaxial filter (viewed from above); Figure 13A depicts a plan view of the central portion of the length along an S-shaped two-pole bandpass coaxial filter with root support (from (Viewed from above); 20 Figure 13B depicts a perspective view of a slightly modified version of the filter of Figure 13A, as produced by the use of MEMAB's EFABTM electrochemical manufacturing technology and after the sacrificial material has been removed; Figure 13C depicts a portion of the shape A close-up view of the filter (similar to that shown in Figure 13B and after the sacrificial material has been removed from the structural material); 1244799 Figures 14A and 14B depict the coaxial embedded in and released from the sacrificial material; A perspective view of the components of the device, in which the outer guide system of the coaxial member includes holes (except the predetermined microwave entrance and exit openings); Figures 15A-15D show The same filter design is based on the mathematical model of the transmission vs. frequency drawing. Figure 16 depicts a flowchart of a sample electrochemical manufacturing process using a single conductive material and a single dielectric material when manufacturing a required device / structure; Figure 17A depicts an end view of a coaxial structure 10 structure that can be generated using the procedure of Figure 16; Figure 17B depicts a perspective view of the coaxial structure of Figure 17A; Figures 18A-18J show the program flow of Figure 16 using Figures 17-8 and 17B are formed; Figure 19 depicts a flow chart that includes a sample electrochemical fabrication process using three conductive materials; Figures 20A and 20B depict a structure that includes conductive elements and can be constructed according to Figure 19 A perspective view of the dielectric support structure formed by the program extension; Figures 21A-21T show the application of the program flow of Figure 19 to form a coaxial structure similar to that shown in Figure 20A, where the two conductive materials are shaped as 2 The sacrificial material that is removed after forming the structure layer, and a dielectric material is used to replace one of the removed sacrificial materials; Figures 22A-22C show the removal of Figure 21R_21T and An extended part of the generation program; Figures 23A and 23B depict a flowchart of a sample electrochemical manufacturing process that uses two conductive materials and a dielectric 29 1244799 material; Figure 24 shows a procedure that can use Figures 23A and 23B A perspective view of the structure formed by extension; Figs. 25A-25Z show a side view of the fifth layer forming process according to Figs. 23A and B, which is used to form a coaxial structure with a dielectric material, and wherein the The dielectric material only supports the inner conductor; Figures 26A-26F show an alternative to the procedure for Figures 25H-25K when a seed layer is needed before the first conductive material is deposited for the fourth layer structure; Figure 28 depicts a perspective view of a coaxial transmission line; Figure 28 depicts a perspective view of a radio frequency contact switch; Figure 29 depicts a perspective view of a log-periodic antenna; Figures 30A and 30B depict a 180 ° rotation relative to each other Sample 15 is a perspective view of a toroidal inductor. Figure 30C depicts a perspective view of a toroidal inductor formed according to an electrochemical manufacturing process. Figures 31A and 31B depict a The program forms a spiral inductor design and a perspective view of a stacked spiral inductor; Figure 31C depicts a variation of the inductors in Figures 31A and 31B; 20 Figures 32A and 32B show two possible ways of comparison Design, where the design of Figure 32B can provide smaller ohmic resistance than Figure 32A and may change the total inductance; Figures 33A and 33B depict the two alternatives of minimizing losses while maintaining a high level of coupling between the coils of the inductor Schematic diagram of inductor configuration; 1244799 Figure 34 depicts a perspective view of an inductor; Figures 35A and 35B depict a perspective view and a side view of an example of a variable capacitor 112; Figures 36A-36B depict the two example coaxial structures End view, in which the central 5 conductor is provided with a cross-sectional configuration that increases surface area relative to its cross-sectional area; Figure 37 depicts a side view of an integrated circuit with internal signals (such as clock signals) Connection pads connected to low-spread transmission lines to conduct conduction to other parts of the integrated circuit; 10 Figures 38A and 38B show the first and second Computer-controlled electrochemical manufacturing system (also known as the EFAB ™ microfabrication system); Figure 39 depicts a plan view of a conventional four-port hybrid coupler; Figure 40 depicts a plan view of a curve and dimensions along an axis; 15 Figure 41 depicts a plan view of a coaxial line having a common outer conductor along the transmission line portion; Figure 42 shows that each λ / 4 segment of a branch line hybrid can be made into a meandering section compared to the conventional straight version Significantly reduces the overall area occupied by the hybrid; 20 Figure 43A shows a quadrature beam from one of a series of four-element linear arrays; Figure 43B shows a Butler array with a hybrid branch line coupler and two Phase shifter antenna elements generated by a circuit; 31 1244799 Figure 43C provides a schematic diagram of a four-element Butler matrix antenna array, which uses four serpentine hybrid couplers, two delay lines and two Crossovers, and four input parts and four antenna elements (such as patch antennas); 5 Figure 44 shows narrowed transmissions each with an outer conductor and an inner conductor Figure 45 provides a schematic diagram of an eight-input section and eight-antenna Butler matrix array, which uses 12 mixing sections, 16 phase shifters (of which eight actually produce displacement), and eight antennas; 10 Figure 46 shows how a patch antenna radiating element can be attached to a coaxial feed element; Figure 47 depicts a substrate upon which a batch of four 8x8 antenna arrays can be formed. [Embodiment 3 15 Detailed Description Figures 1A-1G, 2A-2F and 3A-3C show various characteristics of a known form of electrochemical manufacturing. For other electrochemical manufacturing techniques, see the '630 patent mentioned above, various previously cited publications, various other patents and patent applications incorporated herein by reference, and 20 The combination of various approaches described in patents, patents, and applications to obtain other technologies, or those skilled in the technology can learn or confirm other technologies in other ways from the disclosure herein. Figures 4A-4I show various stages of forming a single layer in a multi-layer manufacturing process in which a second metal is deposited on the first metal and in the openings of the first metal 1244799 5 10 15 20 and its deposits form the layer a part of. Figure 4A shows a side view of a substrate 82 having a patternable photoresist 84 cast thereon as shown in Figure 4B. Figure 4C shows a resist produced by a resist curing, exposure, and development. The patterning of the photoresist 84 results in openings or openings 92⑷-92 (c) extending from one surface 86 of the photoresist through the thickness of the photoresist to the surface 88 of the substrate 82. Figure 4D shows that a metal 94 (e.g., nickel) has been mined into the openings 92 (a) -92 (c). In Figure 4E, the photoresist has been removed from the substrate (i.e., chemically stripped) to expose areas of the substrate 82 that are not covered with the first metal 94. Figure 4F shows that a pair of metals 96 (such as silver) has been blanketed with electrical keys over the entire exposed portion of (conducting) material 82 and (also conductive) above the first metal. Figure 4G depicts a first layer structure that has been generated by planarizing the first and second metals to a height that exposes the first metal and sets the thickness of the first layer. Figure 4H shows the result of repeating the procedure steps shown in Figure 4] 8_4 (} once, in which each layer is composed of two materials. For some applications, this material is removed as shown in Figure 41 —To produce—the three-dimensional structure 98 (such as a component or a device) required. ° Various embodiments, alternative methods, and technologies disclosed here can be used with electrochemical manufacturing techniques that use different types of patterned curtains and military curtains. Combined use. For example, 'Adhesive contact masks and mask operations can be used, adjacent masks and transfer operations (that is, even if the connection is not produced, the kidney can be used at least partially to the fairy of the kidney to at least partially. Artistic Shielding—Masks of the substrate "operation", non-adhesive masks and mask operations (i.e., operations and masks based on masks with invisible contact surfaces) and / or adhesion And mask operations (the use of masks and masks that are adhered to a substrate on which selective deposition or money engraving occurs but 33 1244799 is not just a contact-making substrate). All of these techniques are compatible with various types of the present invention. To merge to produce an enhanced embodiment. A combination of 4 cases plus examples is used to obtain the various implementations shown in other embodiments. 5 For example, in some embodiments, cavities are generated within 10 15 20 and they are completely or partly changed in order. Dielectric material (such as a wall ;; = material or may be a ceramic material), embedded in-dielectric: or-magnetic material (such as embedded in a dielectric restraint or placed in , A sintered powdered ferrous iron material). Dielectric materials can be used to make the structure to keep the material elements separated from each other and / or the microwave transmission or adsorption properties of the device that can be used for repair.-The dielectric can be borrowed The structure is accumulated in layers and incorporated into the structure, or it can enter the bulk or selectively enter the structure after all the layers have been formed. The structure / device generated by some embodiments can be a better gas or a true gap. ° From concealed sealing, or filling any empty weight in the structure by vacuum, other embodiments may use plastic or glass shields to protect the major surfaces of a structure from moisture or other harmful environmental conditions. In some embodiments of another example, it may be necessary to have Structures made of non-conductive materials, such as nickel and gold or copper and gold, can be changed sequentially to achieve this result.

Some preferred embodiments of the present invention provide micro RF or microwave transmission. These transmission lines can be used as the basis for the construction of RF or microwave components. The preferred transmission line has a rectangular coaxial structure and it includes a rectangular hard silver, a rhenium core metal central conductor and a solid metal outer conductor. When used here 34 1244799, a micro-miniature coaxial member or wire will represent a member having a minimum cross-sectional dimension of less than about 200 microns from the inner side wall of the outer conductor to the phase of the outer conductor. The coaxial transmission line is suitable for this miniaturization because it supports the basic mode of lateral electromagnetic (DEM). From basic electromagnetic theory, a tem mode 5A is known to have a zero cut-off frequency (eu f. Frequeney). So no matter how small the structural size is, the TEM mode continues to propagate at any actual frequency. The three advantages of micro coaxial cables are size, microwave bandwidth, and phase linearity. Generally speaking, the physical length of a passive transmission line component must be about one free-space wavelength at the operating frequency, such as 30 cm at -10 GHz. For conventional coaxial transmission lines or waveguides, this results in a member with a linear dimension around this size. For micro-miniature coaxial lines, the members can be made much shorter by making the wires wrap around in a meandering manner and even stacking multiple graceful lines. 15 U], the second advantage of the coaxial cable lies in its excellent bandwidth performance. In any high-L-axis transmission line, ′ is maximally defined by the first, more basic, cut-on frequency of the transverse electric (te) mode. From than. Electricity = It can be known that the maximum size of the interception system and the outer conductor is in the coaxial line known by Nueru. 'This interception generally occurs from 10 to 50 Γ β] o 2 0 / the same vehicle from the line' It can easily be extended to much more than 100 digits = it provides the bandwidth that can cope with the highest frequency in the short-range analog system and the sharpest pulse in the system. -The second advantage of the coaxial line is its degree of phase linearity. From ^ broadcast: TEM mode is that the transmission line can be scattered scattered 隹-nuclear ° easy to say that all frequencies within the operating bandwidth have the same phase speed of 35 1244799, so the relative between two arbitrary points on this line Phase dependence is perfectly linear with frequency. Because of this property, sharp non-sinusoidal characteristics such as sharp digital edges or short digital pulses can propagate without distortion. All other known transmission line media with small chirp axis size scales (ie, smaller than micrometers) have not propagated—pure τ is quasi-remunerative. An ideal example is the phase in Si digital ICS ^

The line is GaAs or inP MMICs (monotonic microwave integrated circuit I microstrip.) In addition to the size, part of the better micro-miniature coaxial line is another-characteristic is 10 its rectangular cross-sectional shape. Because it is easier The center conductor is made into a circle (such as a round wire) and an empty tube (such as a pipe) is used as an outer conductor: known: the same axis-is generally made of a circular center and an outer conductor. Basics ^ Magnetic theory ^ As shown, rectangular coaxial lines can provide effects very similar to circular coaxial lines: :: but lacking analytical design methods. Fortunately, 15 components such as rectangular micro-miniature coaxial lines of any shape or size are available today. Designed numerical tools (such as high-frequency structural simulators or HFSS software). In some preferred embodiments, this is achieved at least in part through the use of electrochemical penetration techniques and, in particular, contact masks or adhesive masks. Selectivity diagram = electrochemical manufacturing technology, which can use micro-coaxial wires to produce extremely dense microwave components. By this manufacturing method, for example, a single common body (ie, outer conductor) can be used to form phases. Neighbourhood The passive microwave function of the Shizuyuan 1 Dai family, which cannot be realized in semi-mosquito ICs or can only be realized at a great cost of performance. Today's semiconductor ICs cannot be achieved-the functional paradigm is circulation-also That is, the non-reciprocal transmission of the rate of 彳 political wave power 36 1244799 between the neighboring ports along a loop. One of the functional examples of poor current ic performance is frequency multiplexing (that is, from frequency to ~ Route the microwave power into several different output ports. Micro-coaxial cables can be used to form 5 components that provide this functionality when combined with the multiple uses of the electrochemical manufacturing process. In some preferred embodiments, The microwave coaxial line is integrated with active semiconductor devices, especially radio frequency and high-speed digital ICs. This integration solves an increasingly serious problem in the ic industry, namely the interconnection and routing of high-frequency analog and digital signals in the chip An obvious example of the usefulness of this integration is the clock distribution in high-speed microprocessors. Due to factors such as distribution and loss on the line Transmission along the very sharp edge of a conventional (stripline) transmission line located on silicon will distort or disperse this edge invariably. With a miniature coaxial cable, the clock signal can be immediately coupled to a single-mode coaxial structure Here, the basis of the clock pulse and all Fourier components will be transmitted at the same speed for a long distance. Therefore, the distortion of the clock pulse and the associated color skew can be reduced. These transmission lines can be used to form a clock signal tree and the like Figures 5A-5C show an RF / microwave filter 102 according to an embodiment of the present invention. Figure 5A depicts a perspective view of a coaxial filter element, which includes spokes 104 & -104 (1. The figure depicts a plan view of the filter 102 viewed from line 20 5 (b) -5 (b) of FIG. Figure 5C depicts a plan view of the coaxial filter viewed from lines 5 (c) -5 (c) of Figure 5A. Fig. 5c shows that the filter of Fig. 5A includes three sets of spokes and separates half (1/2) of the wavelength (; 10) of the center frequency of the band through which the filter can pass. In this configuration, the filter can be viewed as a Bragg-type filter (1244799) with 2 poles (the adjacent pairs form a single pole). In one example, the filter can use the sizes listed in Table 1 below. Table 1 Number Size Number Size 5 Tiger size 122 520 microns 124 400 microns 126 520 microns 128 Shed micrometers 130 Π6 mm 132 116 microns 134 180 microns 136 168 Micron 138 40 micron 140 158 micron 142 40 micron 144 180 micron 146 60 micron 148 60 micron 150 40 micron 152 40 micron 154 40 micron 156 λ〇 / 2 158 λ〇 / 2 5 In other embodiments, these dimensional changes can be made by Change the filter's characteristics of insertion loss in the pass band, attenuation in the stop band, and the transition zone. In other embodiments, various parameters can also be modified by changing the manufacturing materials of the filter and / or filter components. For example, the integral filter may be made of nickel or copper, or it may be partially or completely plated with silver or gold. Fig. 5D depicts a plan view of the central portion of an coaxial filter, one of an alternative embodiment, where the filter contains five sets of spokes 16aa-16e (this figure shows two spokes per repair group), each of which is separated Passes half of the center frequency of the band (ie 162 164, 166, and 168 = λ / 2). This figure shows a four-pole embodiment. For example, other numbers of poles can be used to form the filter (嬖-15 such as three poles or five or more poles). Figure 6A depicts an end view of a rectangular filter using multiple sets of spokes and each set having four spokes. In one example, the filters can be sized as listed in Table 2 below. 38 1244799 Table 2 Number size number size number size 222 920 microns 224 800 microns 226 320 microns f 228 200 microns 230 316 microns 232 59 microns ^ ~ 234 80 microns 236 88 microns 238 40 microns 240 168 microns 242 76 microns 244 362 microns 246 60 microns 248 60 microns is similar to the square coaxial filter in Figures 5A-5C. The above dimensions for rectangular coaxial filters can be changed. In the preferred embodiment 5 of this rectangular filter, the groups of spokes are separated by approximately λ / 2. Figures 6B and 6C show examples of two alternative cross-section configurations (i.e., a circular configuration and an elliptical configuration) for a coaxial filter of the type shown. In other embodiments, there may be other cross-section configurations, and even the cross-section configurations of the inner conductors 302 and 302 may be different from the outer conductors 304 and 10 304 '. In other embodiments, the spokes may have different cross-sectional configurations (square, rectangle, circle, oval, and the like). Figures 7 A-7D depict examples of alternative spoke configurations that can be used in coaxial filters. FIG. 7A shows an embodiment using two spokes 312 and 314, and the spokes 312 and 314 extend in the longer cross-section rule 15 inches of the rectangular outer conductor 316 and maintain the symmetry of this configuration. Fig. 7B shows a two-spoke embodiment similar to that of Fig. 7A. The only difference is that the spokes 322 and 324 extend in the smaller cross-sectional dimensions of the outer conductor 326. Figure 7C shows an embodiment, which is still the same as Figures 7-8 and 7; Figure 6 uses two spokes, of which one spoke 332 extends in a horizontal dimension (ie, the main dimension of the rectangular outer conductor 336) and one 20-wheel 334 39 1244799 extends in the vertical dimension (ie the minor dimension of the rectangular outer conductor 336). In Fig. 7D, only a single spoke 342 constitutes each group. In an example, the embodiment in FIG. 7A can adopt the dimensions listed in Table 2 above, but the only difference is that the dimensions 242 and 244 do not exist in this configuration. In another example, the embodiment of Fig. 7A may adopt the dimensions listed in Table 3 below, in which the number 5 has been modified plus a prime ('). table 3

Number size number size number ruler ^ ~ 222, 720 microns 224, 600 microns 226, 42〇 {Γ 228, 300 microns 230, 175 microns 232, 234, 130 microns 236, 125 microns 238, 40 microns 240, 250 microns 242 , 60 microns 248, 6〇SlP ——- J

In alternative embodiments, there may be other spoke numbers (such as three or five) and configurations (such as multiple spokes extending from one side of the conductor, rather than all the wheels extending from 10 to 100.) ). Figures 8A and 8B show perspective views of non-linear coaxial filter members according to other embodiments of the present invention. Figure 8A depicts an extended meandering shape, and Figure 8B depicts a spiral shape. In other alternative embodiments, other configurations may be used to take out an entry and exit port from the plane of the self-winding structure or even cause the coils, windings 15 to be generally three-dimensionally stacked or extended. This three-dimensional stacking can result in a more compact design than previously obtained. Figures 9A-9C depict alternative embodiments of coaxial filter components that use spokes and protrusions along inner or outer conductors to help filter one of a combination of RF or microwave signals. In particular, FIG. 9A shows an embodiment in which the wheels 352, 20 354, 356, and 358 are included at the end points of the outer conductor 362, and the middle part of the outer conductor projections 372, 374, 376, and 378 is Included on the inner 40 1244799 surface of the outer conductor and preferably about a quarter of a wavelength (A J4) in length and separated by about half a wavelength (again, 0/2). In an alternative embodiment, the recesses in the outer conductor 362 are considered as opposed to the protrusions. In the embodiment of Fig. 9A, the wheels are not separated from each other as in the previous embodiment; 10/2 is an integer multiple of λ / 2. In the depicted embodiment 5, the integer multiple is three. Figure 9B shows another alternative embodiment in which the spokes are spaced at integer multiples of 0/2 and the protrusions 382, 384, 386, and 388 (approximately λ / 2) is included in the inner conductor 392. Figure 9C shows a third alternative embodiment in which not only the protrusions are included on the inner conductor but also a set of additional intermediate spokes 394 and 396. The optimal interval of continuous filter elements in each group is still approximate; ^ 0/2. In other embodiments, there may be spokes, protrusions, and / or dents in other configurations. In some embodiments, it is acceptable to separate continuous filter elements (such as spokes, protrusions, and / or dents) by an integer multiple of λ / 2. 15 In the embodiment shown in Figures 5A-9D, the spokes provided in the structure can provide sufficient support for the inner conductor, so no dielectric or other supporting medium is required. Therefore, in the preferred embodiment, the inner conductor system is separated from the outer conductor by an air gap or other gaseous medium or by an empty space. In other embodiments, a solid or even liquid dielectric material may be partially or completely inserted into the gap between the inner conductor 20 and the outer conductor. The insertion of the dielectric may occur after the conductor is formed, or it may be formed at the site where the conductor is formed. A variety of example implementation procedures are described below. Figure 9D depicts a plan view of the center portion of a meandering, two-pole coaxial filter along its length. In this embodiment, instead of using light wheels, protrusions 394, 396, and 398 on the inner conductor 41 1244799 392 'are used to provide filtering effects. Alternative implementation

A conductive support and a solid dielectric. Will also describe the heart from the __ conductive conduction support

Various other embodiments. Figures 10A-10D depict a flat 10 plane view along the central portion of the length of the coaxial element, and it includes sharp turns in the direction of radiation propagation. According to the manufacturing method of the present invention, different degrees of miter bends can be inserted into the coaxial member and the waveguide member without having to consider the geometric complexity of the design or the accessibility of the tool to reach the mitigated position. Figure 10A depicts a fifteenth turn from one coaxial segment 402 to another coaxial segment 404 and then to another coaxial segment. In this figure, the turning portions 412, 414, 416, 418, 422, 424, 426, and 428 are shown as 90-degree turning portions and it is expected that there will be a significant reflection due to these sharp turns. Figure 10B shows the use of the beveled sections 432 and 434 on the turning portions 412 "and 414, to help reduce losses (such as reflections). Figure 10C depicts the letter used in the turning portion 20 to help further reduce losses. 412 ', 414', 416 ', 418, 422 ,, 424 ,, 426, and 428, are miter sections. In other embodiments, the section length can be extended (such as the section lengths of 412 and 414). To ensure that a larger part of the impact radiation strikes at a non-90-degree incident angle. Figure 10D shows that multiple sections can be applied to each of the turning areas 412 ", 414", 416 ", 418", 422 ", 424 ", 426", and 428 ". The miter effect according to the 1244799 clothing method is not only applicable to coaxial components (such as transmission:" and fine coffee but also made of materials (such as having an interior that is lower than Lion Micro, lower than 働 Micron Or even smaller waveguides, or larger waveguides with multi-filament propagation paths that require difficulty in assembling single-cell structures). Niu Ren Ding and Wei Di ιιαβ_ bribe along __pass wheel line 438 and 1 respectively A plan view of the central portion of the coaxial vanishing member 440, which includes the protrusions generally On the inside surface of the smaller radius side of the coaxial line. The protrusion may be flat and green, or it may have a continuous reading. The protrusion shape may increase the path along the side with a smaller nominal radius of 10 Length so that this path length is closer to the path length along the outer wall than if the surface with a smaller nominal radius were a simple curve 442. In alternative embodiments, the central conductor may also be protruded by the path length. Figures 12A-12C depict one of an alternative embodiment of the present invention with a 15-pole three-pole type root-based appliance. Figure UA purchases a plan view of the central portion along the length of the ferrule (from (Viewed above). Figure 12B depicts the end view of the ferrule in Figure i2A, which shows the rectangular configuration of the structure. Figure i2c depicts a plan view of the circular version of the filter in Figures 12A and 12B. In one example, Figure 12A The filter of -12C can adopt the sizes listed in Table 4 below. No. Size No. Size No. Size 502 300 microns 504 300 microns 506 25 microns 508-S0 245 microns 508-S1 165 microns 508-S2 25 microns 512 λ〇 / 4 (250 mm) 514 λ / 4 (250 mm) 516 λ〇ΑΚ250 mm) 522 '3.00 mm 524 1.64 mm 526 200 microns 528 100 microns 43 1244799 Each pair of root segments 522 and 524 provide 1 capacitive reactance and their combination provides filtering -pole. Each end of the county is shorted to the outer conductor 556 at the end of its side. The interval between the poles is preferably a quarter of the center frequency of the band required for the approximation filter-5 10 ΑΑ Ε ^ wavelength U0 / 4). The length of the root can be selected to provide-capacitive impedance (for example, slightly longer than ^) and-inductive impedance (slightly shorter than .μ). In alternative embodiments, the interval of salt 2 may extend to an integer multiple of λΰ / 4, and other passing parts may be added to the components (such as spokes, protrusions, and the like). In other embodiments, the dimensional change can be used to change the insertion loss of the filter in the band 'to prevent the attenuation in the band, and the characteristics in the transition zone and the passage zone. These other implementations modify various parameters by modifying the materials used to manufacture the filters and / or filters. For example, the integral filter may be made of nickel or fine-grained, or it may be partially or completely plated with silver or gold. In an alternative embodiment, it may be provided from a short-circuited root segment (providing a shunt inductance) and an open-circuited root # used to terminate the short-circuit at the end of the path (such as entering a dielectric) for a shunt capacitance) Each pole is formed, where the capacitive root segment may be able to be shortened due to its open configuration. Figure 13A depicts a plan view of the central portion of a band-pass-based 20-axis filter along the root of an S-shaped dipole (viewed from above). The entry port 602 and the exit port 604 are connected by a channel 606 in the outer conductor 608, and two pairs of paths 612 and 614 extend from the channel 606. An inner conductor 616 extends below the center of the channel 606 and two pairs of root segments 622 and 624 extend from it until they are short-circuited into the outer conductor 608 at the ends of the vias 612 and 614, respectively. 44 1244799 FIG. 13B depicts a perspective view of a filter 630, which has a slightly modified configuration compared to FIG. 13A. The filter in Figure 13B is made using MEMGen's EFAB ™ electrochemical manufacturing technology. The filter is shown to have a ground lead 632 and a signal lead 634 for connecting to a substrate (such as a circuit board, 1C, or the like) after the sacrificial material has been removed. The filter is also shown with a plurality of holes 642 (openings) in the outer conductor to help remove sacrificial material from the inner and outer conductors. In this example, the holes are each 150 micrometers long and 50 micrometers high and extend 80 micrometers to extend completely through the walls of the shielded conductor.

Figure 13C depicts a close-up view of a 10-shaped filter (similar to Figure 13B) after the sacrificial material is removed from the structural material. In this figure, the outer wall (shield wall) of the coaxial element can be seen 652, as is the opening 654 through which it extends. The central conductor 656 can also be seen. The nicks described herein are preferably sized and positioned in the coaxial structure or waveguide structure so that they can remove the sacrificable material in an improved and complete manner without significantly interfering with the electrical properties of the structure. From this perspective, the hole preferably has

Significantly smaller size than the relevant wavelength to make it a waveguide with a far more cut-off frequency (lower limit) than the relevant one, and therefore does not significantly affect the M characteristics of the structure. From this point of view, the structure is better than the relevant wavelength 001 times smaller, even o.ooi times. With the increase of the wavelength, this limit value may cause the remaining holes to be too -2 to effectively remove the sacrificable plutonium. As a matter of fact, a smaller reduction factor may be required. Figures 14A and 14B depict a coaxial filter element with a modified design, a perspective view, which includes an opening (such as a passageway) along the length of the outer guide tube, where the opening is not intended to purify and shoot into or leave the puppet. Partial manufacturing implementation of the present invention 45 1244799 =, _ This ㈣Π helps from small cavities that may have been deposited in the outer conductor = = inside-the sacrificial material 704 is released-the structural material 7 ⑽. In the heart of the impending sacrifice of material 704, these and within the pathway. In other embodiments where melting and flowing = separation of sacrificial material from structural material may be possible, the object opening 1 'may be provided with a suitable supply pressure if it is located in a selected position (such as near a blind passage and similar tracing mountains). To help remove Hibiscus: material. The fourteenth paste scale is a three-dimensional view written by a member formed by a sacrificable material and a filling material. Figure 24B depicts a perspective view of the member 706 separated from the sacrificial material. Figures 15A-15D show plots of transmission vs. frequency according to Mathematical Type 2 for the various filter designs described above. Figure m depicts the analog transmission of a 2-pole filter (three sets of wheels light) with a similar " graph and a heart made of nickel. The dimensions of the components are listed in Table 5. As shown in Figure 15A, the filter's f-pass, located near 28 GHz, has an insertion loss of about 20-22 dB in the passband and an insertion loss of about 6177 in the stopband. Table 5 Characteristics of the inner width of the outer conductor The inner height of the outer conductor is the size of the page.) Dimensions 600 microns, 300 microns, 250 microns, 75 microns, 40 microns, 100 microns to 5-5.5 mm. A model transmission drawing of a 2-pole filter (a set of 46 1244799 protrusions on the inner conductor) shown in the figure, where the length of each protrusion is approximately λ〇 / 4 and the center-to-center interval of the protrusion is approximately λ 〇 / 4 Instead, it has a configuration similar to that of Figures 7 and 8 and is made of nickel. The inner diameter of the outer conductor is about 240 micrometers, and the diameter of the central conductor turns between 20 micrometers and 220 micrometers and has a protrusion of about 15 mm in length and about 30 mm center-to-center spacing. From Figure 15B, it can be seen that the center of the bandpass is located near 5 GHz with an insertion loss of 5-6 dB and an insertion loss of about 13-18 dB in the stop band. Figures 15C and 15D depict model transmission drawings of filters constructed according to the structure and dimensions of Figures 12A-12C, where the structural material of Figure 15C is nickel and for the 15D figure is gold-plated nickel. Figure 15C indicates an insertion loss of around 7-8 dB in the band-pass region, while Figure 15D indicates a corresponding 1-2 dB insertion loss. FIG. 16 provides a flowchart of an electrochemical manufacturing process that accumulates a three-dimensional structure from a single conductive material and a single dielectric material deposited layer by layer. 15 The procedure of Figure 16 is first block 702 where the current layer number η is set to a value of one. The forming process of the structure / device starts first with layer 1 and ends with a final layer N. After setting the current number of layers, the process proceeds to decision block 704, which asks if the surface of the substrate is completely conductive or at least sufficiently conductive 20 to allow a conductive material to be electrodeposited into a desired area of the substrate. If the material only accumulates in a region of the substrate that is conductive and has a continuity to a portion of the substrate used to receive power, it may not be necessary to make the entire surface of the substrate conductive. In this embodiment, the substrate refers to a substrate on which a layer of material can be deposited. As the process progresses, the substrate is modified and added by successively depositing new layers. If the answer to the query is "yes", the process proceeds to block 708, but if the answer is "no", the process moves to block 706 to apply a seed layer of the first conductive material to the substrate. Using a Selective methods (such as first covering 5 substrates and then applying a seed layer, then removing the mask and any material deposited thereon) or a bulk or blanket method to achieve the seed layer application. 嬖For example, a conductive layer can be deposited by a physical or chemical vapor deposition process. Alternatively, it can take the form of a paste or other flowable material that is solidified or otherwise bonded to the substrate. Another alternative It can be supplied in the form of a sheet that is adhered or otherwise bonded to the substrate by Xin 10. Compared with the electrodeposition thickness of the bulk used to form a layer structure, the seed layer is usually very thin. After the seed layer is applied, the process proceeds to block 708 to deposit a second conductive material. The optimal deposition process is a selective process using a dielectric cc mask in contact with the substrate through which the dielectric cc Veil In one or more openings, the conductive material can be electrodeposited on the substrate through the openings (such as by electric money). Other forms of net-selective material deposits can also be used. # 2 Different alternatives to this procedure In this case, the materials of the first and second materials may be different from each other, or they may be the same material. If they are the same, the formed 20 structure may have more isotropic electrical properties; if they are different, they can be used-· Select the removal operation to remove the exposed area of the first material without damaging the second material. After the sequence, proceed to block 71, and remove the seed crystals that are not covered by the newly deposited conductive material. This part is to prepare for the deposition of the dielectric material 48 1244799. In some embodiments, it may not be necessary to remove the seed layer in the area overlaid on the conductive material deposited on a layer immediately before, However, for simplicity, in some environments, the one-piece removal process is still preferred. The seed layer can be removed by an etching operation that has a 5 selectivity to the seed layer material (if it is different from the second conductive material). In this etching operation, Because the seed layer is very thin, as long as reasonable etching control is used, there should be little or no damage to the seed layer material covered by the second conductive material. If the seed layer material (that is, the first conductive material) ) Same as the second conductive material, the controlled etching parameters (such as time, temperature, and / or concentration of the etching solution) should be such that a very thin seed layer can be removed without affecting the newly deposited second conductive material. Causes any significant damage. 15 20

The process then proceeds to block 712 where a dielectric material needs to be deposited. The deposition of the dielectric material can occur in a variety of different ways, and it can be selected to occur either in a blanket or bulk manner. As the procedure of this embodiment forms a planarized composite layer including regions of different conductive materials and regions of different dielectric materials, and it will not hurt (except those related to potential waste) because the planarization removes any excess material The blanket deposition of dielectric materials and the fact that it will tend to provide a wider range of deposition possibilities. Deposition of the dielectric material can occur by spraying, sputtering, dispersion, spraying, or the like. The process then proceeds to block 714 to planarize the deposited material to produce an n-th layer structure with a desired net thickness. Planarization can occur in a variety of different ways including polishing and / or CMP. After completing this layer by the operation of block 714, the process proceeds to block 716. This decision block asks whether the n-th layer (that is, the current layer) is the last layer (that is, the N-th layer) of 49 1244799. If it is, the program proceeds to box 72 and ends; if not, the program moves to the box. 718. Block 718 increments the "n" value by one, and then the program loops back to block 704 and asks again whether the substrate (ie, the previous substrate to which the newly formed layer was added) is sufficiently conductive. This process continues through blocks 704_718 until the forming of layer 1 ^ is complete. Figure 17A depicts an end view of a coaxial structure 722, which includes an outer conductive element 724, and an inner conductive element 726, an embedded dielectric region 728, and an outer 10 dielectric region 730. In some embodiments that extend the procedure of Figure 16, under the assumption that this removal from zone 728 can be achieved in a manner that ensures proper support for the inner conductive element 726, post-processing (i.e., which occurs after all layers have been deposited) may be used. (Processing) operation to remove part or all of the dielectric from region 730 and remove part or all of the dielectric from region 728. 15 Figures 18A_18J show the program flow of Figure 16 to form a structure similar to that shown in Figures 17A and 17B. Figures 18A_18J depict a vertical plan view showing a cross section of the structure as it builds up layer by layer. Figure 18A depicts the starting material of the process (i.e., a blank substrate 732 on which a layer will be deposited). Figure 18B depicts the resulting selectively deposited 222nd conductive material 734_1 'for the first layer. To begin this procedure, it is assumed that the supplied substrate is sufficiently conductive to be deposited without the need to apply a seed layer. Figure 18C shows the results of a blanket deposition of dielectric material 736_Γ (according to operation / block 712), and Figure 18D shows that as a result of the planarization operation of operation / block 714, $ 致 开 y became the first layer of Yuan Cheng L1. The first completed layer has an ideal thickness of 1,244,799 degrees and conductive materials in different regions are made of dielectric materials and dielectric materials. Brother 0 ,,, and indicate the results of the initial operations related to brother layer formation (block 706). Since a significant portion of the first layer is formed of a rhenium dielectric material and the central conductive region is isolated from the two outer conductive regions, a 5 plus-seed layer 738-2 needs to be applied to the second layer. Fig. 18F shows the result of selective deposition (operation 708) of the second conductive material 734-2 'of the second layer, and further shows that some portions of the seed layer 738-2 738_2 are not the second conductive material. 734_2, covered, FIG. 18G shows the result of removing the uncovered portion of the seed layer 738_2 (operation 71), which results in a net crystalline layer for the second layer 738_2. Figure 10 shows the blanket deposition results for the second layer of dielectric material 736-2, (operation 712). Figure 181 shows the completed second layer L2 produced by the planarization procedure (operation 714) and includes conductive material 734_2 and dielectric material 736_2 in different regions. Figure 18J * shows the layer L1_L7 to form the completed structure. The operations for forming the layers L 3-L 7 are similar to those used during the formation of L 2. The structural device of Fig. 15 i8J may be used in the field or it may undergo additional processing operations to prepare its end use. The embodiment of Figure 16 may have various alternatives. In an alternative approach, the order of deposition may be reversed. In another procedure, the materials are not selective, but can be deposited in bulk, and 20 uses a selective etching operation to produce a "clean," selective positioning of the material. Figure 19 provides a flowchart that is slightly more complicated than the procedure in Figure 16. The procedure in Figure 19 uses three conductive materials deposited layer by layer to accumulate three-dimensional structures / devices. Since all materials in this procedure are The conductor and the initial substrate may be the only exception, compared to the procedure in Figure 16 51 1244799 for the layer forming process. However, since three materials may or may not be deposited on each layer, this procedure not only adds to the program's Complexity can also result in a structure that enhances functionality and versatility. The process starts first with block 802, where a current number of layers is set to 5 — 0 = 1). The process then moves to decision block 804, where the query base Whether the surface of the material is fully or at least partially sufficiently conductive. If the answer to this query is "yes", the program proceeds to block 808. On the other hand, if the answer is " No ", the process moves to block 806 to apply a seed layer of conductive material to the substrate. The process then loops to decision block 808. 10 Block 808 asks if the first conductive material is deposited on the first On layer n (that is, on the current layer). If the answer to this query is "No," the program proceeds to block 812. On the other hand, if the answer is "Yes," the program moves to block 810 to selectively deposit the first conductive material. The program then loops to decision block 812. In block 812, it is asked whether the second conductive material is deposited at the first ^ On the level (ie, 15 is the current level). If the answer to this query is "No," the program proceeds to block 816. On the other hand, if the answer is "yes", the process moves to block 814 and a second conductive material is deposited (either selectively or hybridly). This process then proceeds to decision block 816. In block 816, a query is made as to whether the third conductive material is deposited on the nth layer (ie, 20 is the current layer). If the answer to this query is "No", the program proceeds to block 828. On the other hand, if the answer is "Yes", the program moves to decision block 818 ° block 818 and asks whether the second conductive material is deposited on the nth On the level (that is, on the current level). If the answer to this query is "No", the program proceeds to Fang 52 1244799 block 826. On the other hand, if the answer is yes, the program moves to block 822 to planarize the partially formed layer at an ideal level, which may cause the transition thickness of this layer to be slightly smaller than the final ideal layer thickness of the last layer. The process then moves to block 824 and is selectively etched into the deposited material to form 5 or more voids in which a third material can be deposited. This process then completes the return path to block 826. Block 826 deposits a third conductive material. The third material may be deposited selectively or in combination. The process then proceeds to block 828. Block 828 planarizes the deposited material to obtain a final planar n-th layer having a desired thickness 10. After the formation of the n-th layer is completed by the operation of block 828, the process proceeds to decision block 830. This decision block asks whether the n-th layer (that is, the current layer) is the last layer of the structure (that is, the N-th layer). If it is, the procedure moves to block 834 and ends; but if not, the procedure bypasses Go to block 832. ! 5 Block 832 increments the "η" value by one, and then the program loops back to Block 808 and asks again whether the first conductive material is deposited on the η layer. This procedure then continues through blocks 808-832 until the forming of layer N is complete. Figures 20A and 20B depict a perspective view including a structure of a conductive material and a dielectric support structure that can be formed in part according to the procedure of Figure 19. The coaxial structure / device of Figs. 20A-20 includes an outer conductor 842, an inner conductor 844, and a dielectric support structure 846 for holding the two conductors in a desired relative position. During forming, the inner and outer conductors are formed of one of the three conductive materials (a main material) described for the procedure in Figure 19, and the outer conductors are formed not only with entry and exit ports 848 and 850, but also with processing ports 852. In some of these processing ports, 53 1244799, there are-attack value guide _ \ to pass \ call and make it contact the inner conductor 844. In the remainder of the build volume, after all layers of the third-level conductive structure are formed, the secondary material is removed and a dielectric material 846 is filled into the resulting plurality of lines. Subsequently, the third-level conductive material was removed, leaving the cavitation structure in the second figure to be absent. It should be understood that in the discussion of FIG. 20A, reference is made to the primary, secondary, and tertiary time series—for one place, the second, third, and third conductive materials related to the procedure of FIG. 19, but not necessarily separately.

Figure 20B traces the structure similar to Figure 20A, the only difference is that the position of the inner and outer conductors is more firmly held in place by a modified dielectric structure 846. Figures 21A-21T show the application of the program flow of Figure 19 to form a coaxial structure similar to that depicted in Figure 20A, where both conductive materials are sacrificial materials that are removed after the structural layer is formed and where A dielectric 15 material was used to replace one of the sacrificial materials that was removed.

Figure 21A depicts the starting material for this procedure (i.e., a blank substrate 852 on which a layer will be deposited). When going through this procedure, it is assumed that the supplied substrate is sufficiently conductive to be deposited without the need to apply a seed layer (ie, the answer to question 804 is "yes"), and the answer to question 808 is also 20 " Yes". Figure 21B depicts the results of the operation of block 819 on generating a first conductive material 854 deposit for an initial deposit 854-1 ' for the first layer. Next, assume that the answer to the query of block 812 is "yes" to the first level. It is also assumed that the answer to the query of block 816 is “No” for the first layer. Therefore, FIG. 21C shows the combined deposition of the second material 856 (block 810) and the first and first conductions of the product 54 1244799 Planarization of materials 854_1 and 855-1 (block 828) to complete the formation of the first layer L1. Figures 211) and 21 £ represent the same procedures and operations as those applied to the formation of the first layer, which are used to form The second layer 5 composed of the first and second conductive materials in different regions 854-2 and 856-2. [2. Figures 21F and 21G represent the same procedures as those applied to the first and second layer forming effects and Operation to form a third layer L3 composed of first and second conductive materials in different regions 854-3 and 856-3. Figures 21H-21K show a portion of the fourth layer L4 that forms the structure / device The results of the operation. Figure 21H depicts the results of the operation of block 81 of the first conductive material 854 deposit to produce a 10 initial deposit 854_4 for the fourth layer. Next, suppose the answer to the query of block 812 "Yes" for the fourth layer. It is also assumed that the answer to the query of block 816 for the fourth layer is 疋. Thus, Figure 211 shows the combined deposition of the second material 856 (Block 810) and the planarization of the deposited first and second conductive materials 854-4, and 856-4, 15 (Block 822) to form a flat surface. But the fourth layer is only partially formed. Figure 21j shows the results of operation 824, which etched a portion of the planarized deposit 856-4. Figure 21K shows the combined results of operations 826 and 828, which are used to generate the first conductive material 854, the second conductive material 856, and the third conductive material 858 in different regions 854-4 and 856-4 and 858-4. The completion of the fourth layer L4.

〇 A Figures 21L and 21M, Figures 21N and 210, and Figures 21P and 21Q represent the same procedures and operations as those applied to the first three layers of forming, which are used to form 854-5 and 856- 5. The fifth to seventh layers (L5, L6 and L7) composed of the first and second conductive materials of 854-6 and 856-6, 854-7 and 856-7. 55 1244799 The 21R-21TSI represents the extension of the program flow of Figure 19. The training diagram represents the result of selective removal (eg, by engraving or melting) of the third conductive material, thereby forming an isolated contacting the first conductive material with a gap 866 extending through an outer wall 862 of the first conductive material. Internal structure 4 (such as the inner conductor of a 5 coaxial transmission line). Fig. 21s depicts the structure of Fig. 21R and the gap 866 is filled with a selected dielectric material 860 that contacts the outer wall 862 and the inner structure 4. Figure 21T depicts the structure of Figure 21S and in which the-conductive material is removed to create-a structure that is substantially filled with air and wherein the internal structure 864 is supported relative to the outer wall by one or more dielectric structures 10 support. Figure 21T also depicts an opening in the structure. Figures 22A-22C! The first removal, backfill and second removal operations will be applied to the opposite material as shown in Figure 21R-21T. In FIGS. 22A-22C, the first-conducting material 854 is removed to create a void, and the void is filled with a dielectric 860 ', and then the third conductive material is removed. 15 In alternative embodiments, the procedures of Figures 21R-21T and 22A-22C can be extended to include a second filling operation to fill the voids created by the final removal operation. The second filling operation may use the same or different dielectric dielectrics as the original user. In other alternatives, more than three conductive materials may be used so that the resulting structure / device is composed of two or more conductive materials, and / or is accompanied by two, two or more solid, liquid or gas media. Electrical quality. Figures 23A and 23B provide a flowchart of an electrochemical manufacturing process using two conductive materials and a dielectric material to accumulate a three-dimensional structure / device. The program in Figures 23A and 23B starts with block 902 to set three autumn sequence variables. (1) The number of layers is set to one, n = 1, and the main parameters of the first Xuanjing layer are set to 56 1244799 to zero. 'PSLP = 0 'and (3) —The second seed layer parameter is set to zero and ssLP = 0. The process then proceeds to decision block 904 and asks if the substrate surface is fully or at least partially fully conductive? If "yes," the program proceeds to decision block 906; if "no", the program proceeds to block 908. 5 In blocks 906 and 908, whether the first conductive material (FCM) will be deposited on The same query is made on the nth layer (ie, the first layer). If the answer to the query in block 906 is "Yes", the process proceeds to block 914; If the answer to the query at block 908 is "yes," the program proceeds to block 910; and if "no," the program proceeds to block 916. 10 Block 910 applies a primary seed layer (PSL) of a conductive material to the substrate. This seed layer can be applied in a number of different ways and some of them have been described previously. This procedure proceeds from block 910 to block 912, where the main Xuanjing layer parameter is set to one and PSLP = 1, which means that a main seed layer has been deposited on the current layer. 15 From block 912 and the yes answer from block 906, the process proceeds to block 914 to selectively deposit the FCM. In some alternatives, preferential deposition is performed via a CC mask. From block 914, from the "No," answer of block 908, and from the "No" answer of block 906, the program proceeds to decision block 916. In decision block 916, a decision is made as to whether a second conductive material (SCM) is deposited 20 at the nth If the answer to the query in block 916 is "yes", the program proceeds to block 924; if the answer is "no", the program proceeds to block 918. In blocks 924 and 918, the same query is made as to whether a primary seed layer has been deposited on the first layer (i.e., is DSLP = 1?). If the answer to the 57 1244799 query of block 924 is "yes," the program proceeds to block 926; if the answer is no, the program proceeds to block 934. If the answer to the query of block 918 is "yes", the program proceeds to Block 922; if the answer is "No," the program proceeds to block 966. 5 In decision block 926, a query is made as to whether the existence of the PSL is compatible with the SCM to be deposited. If the answer to the query in block 924 is "YES If the answer is "No," the routine proceeds to block 932. Blocks 932 and 922 remove any part of the PSL that is not covered by the FCM. From block 932, the routine proceeds to block 934. As in "No" in block 924, 10 responds to the situation, and the process proceeds from block 922 to block 966. In decision block 934, an inquiry is made as to whether the surface of the substrate has full or sufficient conductivity. Although this question has been asked before, the answer may be changed by depositing a conductive material of a different pattern or by removing a previously supplied seed layer because it is incompatible with the deposited second conductive material. If the answer to question 15 of block 934 is "Yes", the program proceeds to block 928; if the answer is no, the program proceeds to block 936. Block 936 applies a secondary seed layer (SSL) so that a second conductive material can be deposited in a subsequent operation. The program then proceeds to block 938, where SSLP is set to one to indicate that this layer has received a secondary seed layer, and this information will be useful for subsequent operations. Block 928 is reached by a "yes" response to block 926 or 934 or via block 938. Block 928 deposits a second conductive material (SCM). This deposition operation may be a selective operation or a blanket operation. From block 928, the program proceeds to decision block 942 and asks if a dielectric 58 1244799 is to be deposited on the nth layer (ie, the first layer). If the inquiry at block 942 is "yes", the process proceeds to block 944; if the answer is no, the process proceeds to block 968. Block 944 planarizes the deposited material to obtain a portion of the shaped 5th layer and has an ideal thickness that may differ from the final thickness of the layer. After planarization, the process proceeds to block 946 and is selectively etched into one or both of the deposited conductive materials to form one or more voids in which a dielectric can be placed, and then the process proceeds to block 948. If the answer to the inquiry in block 948 is "Yes", the program proceeds to block 952; if the answer is "No," the first 10 steps of the program proceed to block 956. Decision block 952 asks if the etching of block 946 caused all exposed SSL to be removed? If the answer to the query at block 952 is "YES", the program proceeds to block 956, and if the answer is "No", the program proceeds to block 954. Block 954 removes the portion of SSL 15 exposed by the void formed in block 946. After the operation of block 954, the program proceeds to block 956. Decision block 956 asks if the PSLP is equal to one. If the answer to the query of block 956 is "Yes," the program proceeds to decision block% 2: If the answer is "No", the program proceeds to block 966. Decision block 962 asks whether the SCM etch removes all exposed 2PSL If the answer to the query in block 956 is "Yes," the program proceeds to decision block 966. If the answer is "No," the program proceeds to block. Block 964 removes the portion of the palate exposed by the voids generated in block 946. After the operation of block 964, the program proceeds to block% 6. Block 966 deposits a dielectric material. Deposition procedures may be selective 59 1244799 or have blanket nature, and may have a variety of different procedures, some of which are described elsewhere herein. Block 968 planarizes the deposited material to obtain a final planar n-th layer having a desired thickness. 5 After the formation of the n-th layer is completed by the operation of block 968, the program proceeds to decision block 970 where PSLP and SSLP are both set to zero, and then the program proceeds to block 972. This decision block asks whether the n-th layer (that is, the current layer) is the last layer of the structure (that is, the N-th layer). If yes, the program proceeds to block 978 and ends, but if no, the program proceeds to block 974. 10 Block 974 increments the "η" value by one, and then the program returns to block 904 and asks again whether the substrate surface (that is, the substrate surface as modified by the forming action of the immediately preceding layer) is sufficiently conductive. This procedure then continues through blocks 904-974 until the formation of the v layer is complete. As with the programs of Figures 16 and 19, there are 15 different alternatives to the programs of Figures 23A and 23B. These changes may include changing the order of material deposition as a whole, or changing the order of operations for depositing various types of materials based on what other operations have occurred or will occur during the formation of a given layer. Additional materials of conductive or dielectric type may be added. The final selectivity of any deposition may occur by depositing the material in the void, by physically controlling the deposition location, by etching away the 20 material after deposition. Additional operations can be added to this sequence to remove selected materials or deposit additional materials. Fig. 24 depicts a perspective view of a coaxial structure, which includes outer and inner conductive elements made of a material, and a dielectric support structure 1006 made of 9% material. The structure of FIG. M can be formed according to the procedures of the top drawings of BA and 1244799, in which a subsequent layer forming operation of adding-for removing-conducting material is added. In structure ㈣, the inner and outer conductors are formed of one of the two conductive materials (i.e., one of the main materials) for the m and 23B procedures. Use-secondary conductive materials as-sacrificable materials. A dielectric material (ie, a tertiary material) is also used as the structure H-point. After all layers of the structure are formed, the secondary conductive material is removed to produce a final structure composed of the primary conductive material 994 and the dielectric material 996. 10

Figures 25A-25Z show the results of various operations of 23A and 23B to form the layers of the sample coaxial member shown in Figure 24. See Table 6 below for operations related to the results shown in Figures 25A-25X and 26A-26F. Table 6 Figure "25" 籴 "26" Layer "L ,, Operation — ---- Note 25A, C, E, I, P, V 26C 1, 2, 3, 4, 6, 7 914 / child product Yiyi Material 992 ------ 25B, D, F, X 26F 1,2,6,7 936 & 968 25F®K, R 3,4,6 928 & 944 25G, L, S 3,4, 6 946 25H, N, U 3,4,6 966 & 968 Use the third material 996 to finish 25J, Q, W 26E 4,6,7 936 26B Apply a main seed layer 998 25M, T 4,6 shift Remove the exposed part of the secondary seed layer 26D Remove the exposed part of the primary seed layer 0 5 Do all operations for layer 4

An overview of the unfinished structure shown in Figure 25 Y ’, where the layer boundary no longer appears 61 1244799 The line part is based on the assumption that the second seed layer material is the same as the second material. Figure 25Z shows the results of a post-processing first material removal procedure (such as selective etching) used to produce the structure shown in Figure 25. Figures 26A-26F show an alternative to the procedures for Figures 25H-25K when the primary seed layer is needed before depositing the first conductive 5 material for the fourth layer of the structure. Figure 27 depicts a perspective view of a coaxial transmission line. The coaxial transmission line ιo2 includes a conductive shielding portion 1006 surrounding an outer conductor 1004. In the illustrated embodiment, the transmission line 1002 can be set to be separated from a 10 substrate 1008 by a spacer 1010. In the illustrated embodiment, the substrate may be a dielectric, wherein an appropriate pole potential is applied to the shielding portion 1006 via the conductive spacer 1010 (eg, via the bottom side of the substrate) and a signal may be applied. Apply to the central conductor (for example via a suitable connection from the underside of the substrate). In an alternative embodiment, the shield may be bent around the bent portion of the central conductor so that the shield provides a substantially complete central conductor shielding effect at almost all positions above the 15 substrate (exceptions may exist in the shield One or more openings to remove a sacrificable material used during device formation). In other alternative examples, the substrate may be conductive and in the case of the inner conductor of the central conductor and the coaxial element = 20 centigrades through the substrate, a dielectric material is used to provide isolation. In the embodiment, the shielding portion may take the form of a conductive mesh or even a plurality of conductive lines extending out of the surface of the substrate. In other embodiments, the transmission line may be 〇〇

The plane (g is parallel to the plane of the substrate) is deformed, or it can be used. What is needed? For example, a transmission line can adopt a spiral pattern much like a spiral loop of a transmission line. Similarly, the filter elements similar to Figures 12C and 13A 62 1244799 have been changed from the more planar configuration shown in the figure to a more three-dimensional shape, where the main line of the filter (616, , 614, and the like follow the path of the male in the spiral-or take the screw path # itself (for example,-a path with a diameter smaller than 5 for the main and line takers). This configuration can reduce the planar size of the structure at a high added cost, while still maintaining a required effective length. Figure 28 depicts a perspective view of a radio frequency contact switch. The RF switch is a cantilever switch. The switch 1022 includes a cantilever beam 1026 and it contacts a second target 1024. When a voltage is applied to the lower control electrode, the cantilever beam is flexed downward by 10 electrostatic force. In the embodiment shown in the figure, all the switching elements are suspended from the base by the bases 1030a-1030 (c), which will lead to a reduction in parasitic capacitance to the base. This approach will increase the distance between the drive electrode and the cantilever beam, increase the actuation force and reduce the required drive voltage, and increase the distance to the substrate, thus reducing parasitic effects. If both are arranged on a flat substrate, the electrode size and contact gap will not be independent. With the flexibility of the multi-level embodiment of electrochemical fabrication, the switching member can be placed in a more optimized position. In one embodiment, the long cantilever beam may have a length of about 600 microns and a thickness of 8 microns. A circular contact pad can be positioned under the beam to separate the contacts, for example, by about 32 microns to provide high 20 isolation. The lower beam can be suspended, for example, about 32 microns above the substrate, while the upper beam can be positioned about 88 microns above the substrate. Of course, in other embodiments, other dimensional relationships may exist. In an example using this switch, a voltage can be applied between the control electrode 1028 and the cantilever 1026 to close the switch, while an AC signal (such as an RF or microwave signal) is present on the cantilever or another beam and 63 1244799 in Once the switch is closed, it can propagate. In some alternative designs, one or both of the wires 1026 and 1024 may include protrusions at their contact positions, or the contact positions may be made of a suitable material to extend the contact life. In other alternative designs, the overall switch may be positioned within a shielded conductor, and it may reduce any radiative losses associated with signal propagation along the length of lines 1024 and 1026. In other embodiments, the switch can be used as a capacitive switch by positioning a thin layer of dielectric (such as nitride) at the contact position of one or two wires 1024 and 1026, so that the switch can move the contact portion Between low and high capacitance values. When impedance matching occurs, a signal can pass through this switch (for example, when the capacitance is very low, higher frequency signals can pass and lower frequency signals can be blocked or significantly attenuated). In other embodiments, the closest part of the control electrode or wire 1026 may be coated with a dielectric to reduce the possibility of a short circuit between the control electrode and the flexible flexure. In other embodiments, a pull-up electrode may be included to supplement the detachment of the contact portion that may occur when using the yellow force of the pliable 15 wire 1026 alone. In some embodiments, the ratio of the 'switched capacitor (assuming it is a capacitive switch) to when it is turned off is preferably greater than about 50, more preferably greater than about 100. In other embodiments, the secondary conductor may be attached to and separated from the bottom side of the base 1030 (c) and the wire 1026 by a dielectric. This time, the main conductor can be a part of the switch control circuit 20, instead of the control circuit and the signal sharing the conductor 1026. Figure 29 depicts a perspective view of a logarithmic periodic antenna. The antenna 1032 includes several different dipole lengths 1034 (3) -1034) along a common feed line 1036 supported from a substrate (not shown) by a spacer 1038. This increased position reduces the parasitic capacitive losses that were originally associated with the effect of the 64 1244799 that the antenna is in contact with or in close proximity to the lossy substrate. In other embodiments, other antenna configurations may be used, such as linear slot arrays, linear dipole arrays, helix antennas, spiral antennas, and / or horn antennas. 5th 30A-30B The figure depicts a perspective view of a sample toroidal inductor design rotated about 180 degrees relative to each other. Figure 30C depicts a perspective view of the toroidal inductor of Figures 30A and 30B formed according to an electrochemical manufacturing process. The toroidal inductor of Fig. 20C is formed according to the procedure of Figs. 2A-2F. In some embodiments, the inductor may be formed on a dielectric substrate. In other embodiments, the inductor may be formed on a conductive substrate and have a proper dielectric isolation feedthrough effect. In a particular embodiment, the toroidal coil may include 12 winding portions, traverse approximately 900 microns, and have its lower surface suspended approximately 40 microns above the substrate. The inductor 1042 includes a plurality of inner conductive pillars 1044 and a plurality of 15 outer conductive pillars 1046 connected by the upper bridge element and the lower bridge element 1050 (a) and 1050 (b). The inductor also includes two circuit connection elements 1048 (a) and 1048 (b) and is supported by the spacers 1052 (a) & 1052 (b). In some embodiments, the 'integral inductor' may be supported by the spacers 1052 'and 1052 (b) and separated from a substrate. It is believed that this interval can reduce the parasitic current valleys that might otherwise be caused by contact or close contact between the lower conductive bridge 1050 (b) and a substrate (not shown). Although in some embodiments, the inner and outer conductive pillars may have similar dimensions, in the illustrated embodiment, the area of each inner conductive pillar is smaller than the area of the outer conductive pillar (for example, a smaller diameter). Similarly, in this embodiment, the widths of the conductive bridge portions 1050 (a) and 1050 (b) are also white and large from the center of the inductor. It is believed that this configuration will result in a reduced ohmic impedance with a 65 1244799 required for the current to travel along the inductive path. It is also believed that this configuration can lead to reduced magnetic flux leakage from the inductive state and therefore help increase inductance or reduce noise that components may radiate to other circuit components. In other examples, it may be advantageous to shield the outer periphery of the inductor by a conductive wall. Similarly, the inner periphery may be shielded by a conductive wall, and in other embodiments, the upper surface and possibly even the lower surface may be shielded by a conductive plate or mesh. In other alternative embodiments, the spacers 1052 (a) and 1052 (b) and even the circuit connection elements 1048 (a) and 1048 (b) may be at least partly made possible and may help to minimize radiation The missing conductive element is shielded by Ping Lu 10. In other embodiments, the circuit of the inductor may adopt a round shape instead of a substantially rectangular shape as shown in the figure. Figures 31A-31B depict perspective views of a spiral inductor design and a stacked spiral inductor formed according to an electrochemical manufacturing process, respectively. The inductor 1062 shown includes eight coils 1064 (a) -1064 (g), one 15 connection bridge 1066, and two spacers 1068 (a) and 1068 (b). In a detailed embodiment, the coils can each be about 8 microns thick, they can have an outer diameter of about 200 microns, they can be separated by about 8 microns, and the bottom coil can be raised about 56 microns above the substrate. As in the illustrated embodiment of Figures 27-30C, the spacer is used not only to establish an electrical connection between the inductor and the rest of the circuit, but also to separate the inductor from a substrate (not shown). FIG. 31C depicts one variation of the inductors in FIGS. 31A and 31B. Inductor 1072 in Figure 31C can be designed to indicate the use of 23-layer design features. As depicted, the inductor includes u coil layers 1074 (a) _1074 (k) and 9 and 1/8 turns. Each coil layer is formed by an 8 micron thick layer and is separated from the other 66 1244799 coil layers by a gap of 4 micron thickness. The inner diameter is 180 microns and the outer diameter is 300 microns. As shown, the inductor includes a core having a diameter of 60 microns, and a space of 60 microns between the core 1076 and the windings 1074 (a) -1074 (k). When the core is ignored, a simple calculation based on a uniform magnetic field produces an inductance of 20 nH for the inductor 5. However, because a real inductor has a larger diameter than its length and the windings are not particularly tight, the inductance will be lower than this theoretical value. The true value is estimated to be in the range of 25% to 50% of the theoretical value (ie, about 5-10 nH). On the other hand, the presence of core 1076 can significantly increase the inductance (for example, by a factor of 100 or more). Of course, in the other 10 implementations, there may be other configurations. In other embodiments, the inductors of FIGS. 31A-31C may take different forms. Figures 32A and 32B provide a comparison of two possible designs. The design of Figure 32B can provide a smaller ohmic impedance than Figure 32A and may change the total inductance. Figure 32A shows a single, one inductor with N coils; 1082 and 15 long connector wires 1084, and Figure 32B depicts two half-size inductors 1086 (a) and 1086 (b), The number of coils of each of them is regarded as about half of FIG. 32A and they are connected in series via a short bridge element 1088. As shown in the figure ', because the bridge element 1088 is shorter than the connector wire 1084, the inductor pair in Figure 32B will have a smaller loss than that in Figure 32A. On the other hand, the coupling between the two inductors may be reduced by 20 to have an associated net inductance loss. By including a core that extends over two inductors in a loop, it is possible to restore the inductance or even exceed the higher inductor of Figure 32A. Figures 33A and 33B depict schematic diagrams of two alternative inductor configurations that minimize ohmic losses and maintain a high level of 67 1244799 coupling between the inductor coils. In the figure, the upward path of the coil is depicted by a solid line, and the downward path of the coil is depicted by a dashed line. In Fig. 33A, the upwardly extending coil has a larger side length than the downwardly extending coil. In Fig. 33B, it has approximately similar side length dimensions. 5 Figure 34 depicts a perspective view of a capacitor 1092 including twelve intersecting plates (two groups of 1094⑷ and 1094 (b) each having six plates). In a detailed embodiment, each plate may have a thickness of 8 microns, a gap of 4 microns for each plate, and each plate may be 436 microns on one side. Based on these details, an ideal parallel plate calculation is used as the basis to calculate the capacitance at about 5 pH. This value is expected to be slightly different due to fringe field effects. As shown in the figure, the capacitor is surrounded by a weir portion 1096. The weir portion 1096 can be used to facilitate a post-release dielectric backfill while minimizing dielectric overflow to adjacent devices that may be manufactured in adjacent places on the same substrate. . The capacitance provided by these capacitors can be greatly increased by a dielectric backfill. Similarly, the capacitance can be increased significantly by reducing the I5 separation distance between the boards and / or adding additional boards. The capacitor has two pairs of orthogonally positioned bonding pads 109898 and 1098 (b) in the figure. Since the parallel bonding pads are conductively connected, the electrical connection to the device can occur through connection to a 1098 (a) pad and a 1098 (b) pad. As shown in the figure, the bonding pad is aligned with the lowest plate of the capacitor, and the upper plate is connected to the lowest plate by 20 pillars located in extensions from each group. In other embodiments, the pad may be more directly connected to, for example, a middle-level board of each stack. The current movement can be advanced from there to the other plates of each stack. Figures 35A and 35B respectively depict a 1244799 perspective view and a side view of an example of a variable capacitor i 102. The capacitor plate has a configuration similar to that of FIG. 34 and is again divided into two groups of six plates 104 (a) and u04 (b). In this embodiment, a set of capacitor plates 1104 (a) is attached to the spring element 1106 and to two sets of parallel electrostatic actuators 1108. These actuators can attach the plate 1104 (a) The plate 1104 (b) is driven vertically with respect to the fixed plate 5. In use, a DC potential can be applied between the elastic support 1110 and the actuator pad 1112. The actuator pad 1112 is connected to the column 1114 'and the column Π14 in turn holds a fixed drive plate 1116. When this driving voltage is applied, 'the movable drive plate 1118 is pulled closer to the fixed drive plate' and it in turn pulls the movable capacitor plate 1104 (a) through the support post 1124 to move closer to the fixed capacitor plate. 1104 (a) and thus changed the capacitance of the device. The capacitor plate 1104 (b) is held in position by a support post 1126. The capacitor can be connected to a circuit via a spring support 1110 and a fixed capacitor plate contact pad 1128. In other embodiments, it is possible to increase the surface area of the element without necessarily increasing its cross-sectional size by 15 in order to reduce the association with a current-carrying conductor such as the spacer of Figure 27-31C, the association with the central conductor of the coaxial member, And the resistive losses associated with various other components of the component. This is particularly useful when the frequency of the signal is only a small percentage of the skin depth compared to the cross-sectional dimensions of the component. For example, the cross-sectional dimension of a conductor carrying a current (in a plane perpendicular to the direction of current flow) can be increased by changing from a circle to a square or other shape containing a plurality of corners. Figures 36-8 and 36] 8 show two other examples of these coaxial components, where the coaxial components 1132 and 1142 include the central conductors H34 and 1144 respectively and they have been modified from square and circular configurations to have dents to increase Modified configuration of surface area. 1244799 Figure 37 depicts a side view of another embodiment of the present invention, in which a integrated circuit 1152 is formed on a substrate 1154 (such as silicon) and its contact pads 1156 are exposed through a protective layer 1158 on top of the integrated circuit come out. The contact pad may be a pad for connecting to other devices, or may be a pad for internal connection on the top side of a separate element for connecting the integrated circuit 5. For example, interconnects (and interconnects) can be pads used to distribute audio clock signals (such as 10 GHz) to different locations in integrated circuits via a low-dispersion transmission line such as a coaxial cable or waveguide. . The two coaxial transmission lines 1162 and 1172 connect parts of the pads to each other in the figure. The outer guide system with the same axis is supported by the abutments or bases 1164 and 1174 and is connected to the pad by wires 1166 and 1176. In an alternative embodiment, the pad is connected not only by the wires but also by bringing at least a portion of the coaxial shield in contact with or in close proximity to the integrated circuit surface. In some embodiments, the coaxial structure may be supported only by the central wire and any ground connection, but in other embodiments, a base or the like may be used. In some implementation methods, the coaxial structure may be pre-formed, picked and placed in the required position on the integrated circuit, or the EFAB procedure may be performed directly on the upper surface of the integrated circuit. For the implementation of the 1C integration of this microdevice, see US Provisional Patent Application No. 60 / 379,133, which is briefly described below and incorporated herein by reference in its entirety. Of course, in other embodiments, some of the pads may be used to connect between the components of the IC, and some other pads may be used to connect to other components. In some embodiments, the coaxial line may have a specially customized length to control the timing of signals arriving at different parts of a chip or even different chips. Figures 38A and 38B show the first and second-generation computer-controlled electrochemical manufacturing systems (ie, EFABTM microfabrication systems) produced by MEMGen, and the ancient 70 1244799 system can be used to implement the procedures and the devices / structures that form this article. In the current composition, these systems include selective deposition and blanket deposition stations, a planarization station, various cleaning and surface activation stations, inspection stations, clock-cover pond circulation systems, and atmospheric control systems (such as temperature control and 5 air filtration system), and a transport stage for moving the substrate relative to each station (that is, providing Z, X, and Y motions). Other systems may include one or more selective etch stations, one or more blanket etch stations, one or more seed layer forming stations (such as CVD or PVD deposition stations), selective atmosphere control systems (such as comprehensive or Supply a specified gas in a specific work area), and may even include one or more 10-rotation stages to align the substrate and / or selected stations. , ..., ιτ ^ τ I} 卞 ^, where multiple members can be used together on the substrate, or they can be cut from each other and applied to separate secondary substrates to use separate members in different 15 20

Component board. In other embodiments, the electrochemical procedures of the embodiments can be used in a general manner to form different shapes on a single substrate at the same time.

’Which may have pieces in their last position with many of them or: = interconnect required. In some embodiments, the direct shape of a single or multiple identical components may include the integral control shape and material of the pre-installed components. Part of the implementation can be a monotonic building block to form the entire system. In other embodiments, the device or device group may be invited to form a structure. For these packaging structures, please refer to Zhanyang Hit described in the table ^ Guo Guo Patent Application No. 60 / 379,182 of the following patent application. This bow! A used application reveals a technique for forming a structure and a hidden sealed package. Knot 71 1244799 has a hole for removing a sacrificial material. After the sacrificial material is removed, the holes can be filled in a number of ways. For example, a meltable material that can flow and seal the holes and then solidify can be placed near or in close proximity to the holes. In other embodiments, a blocking material can be provided by bridging the resist material with a solder-like material or other adhesive-type material by placing a blocking material immediately adjacent to the opening 5 but separating it, and then removing the sacrificial material through a solder-like material or other adhesive-type material. Holes and seal them to block them. In other embodiments, a deposition may be performed to fill the holes, especially if the deposition is basically a straight-line deposition process and if a hole is provided at the bottom of the hole that can act as a deposition stopper and can be used to accumulate accumulation points that can block the holes. This is especially true for structural elements. Although most of the disclosure in this application has been directed to coaxial transmission lines and coaxial filters, it should be understood that these structures can be used as basic building blocks for other structures. Therefore, the RF and microwave components of various embodiments may include one or more of the following: a micro-miniature coaxial component, a transmission line, a low-pass filter 15, a high-pass filter, a band-pass filter, a reflection-based filter, A suction filter, a leaky wall filter, a delay line, an impedance matching structure for connecting other functional components, a directional coupler, a power synthesis state (such as Wilkinson), a power A splitter, a hybrid synthesizer, -magic TEE, -frequency multiplexer, or a frequency demultiplexer. Sky 20 line j includes a pyramidal (ie, smooth wall) feeder antenna, a scaly (corrugated wall) feeder antenna, patch antenna, and the like, and linear, planar, and attachable arrays. These components can efficiently transfer microwaves from micro transmission lines to components in free space. The miniature coaxial cable produced by EFAB can also be a new component with multiple functions. The combination of power combining (or splitting) and frequency 72 1244799 rate multiplexing (or demultiplexing) can be easily combined into a single miniature coaxial structure with multiple input and output ports. An example of the application of a coaxial transmission line according to an embodiment of the present invention is illustrated by applying to a four-port transmission line hybrid coupler. 5 Hybrids are one of the earliest and most useful components of all passive microwave components. Two functions are power division and phase shift. When composed of waveguides, coaxial lines, or other broadband transmission lines, hybrids generally operate according to the principle of constructive and destructive interference in the current division of a junction and the dominant spatial mode in the line. 10 Figure 39A shows a classic four-port transmission line hybrid architecture. According to its architecture, it is called a "two branch line, a coupler, because it can be thought of as a" penetration "with two" vertical branches "1204, 1206 that make it coupled, lines 1200, 1202 (port 1 to port 2 , And ports 3 to 4). These through wires and branches are formed by the inner conductor of the coaxial element surrounded by the shielded conductor 1208. These shielded conductive elements 15 are sized relative to the size of the inner conductor to provide the required characteristic impedance. Some shielded conductors can shield individual inner conductors to achieve a more compact effect, and a part of a single shielding element can be used to shield specific parts of multiple inner conductors. Further description of the hybrid will depend on how it outputs a signal from input port 1 to wheel output port 2 and two coupled ports 3 and 4 20. The goal is generally to suppress all power flow into coupled port 3. The most useful power split is typically 3 dB or 50% across 璋 2 and coupled 槔 4. As shown in Figure 39, the phase difference between ports 2 and 4 is 卯. This phase difference is common in radar receivers and homology channels in the feed network of the l (in phase) and Q (quadrature) channels. According to the principle of single-core wave interference, all three output phases can be satisfactorily satisfied by making the electrical length of the four central lines 第 in Fig. 丨 equal to λM. Then, using transmission line circuit theory, when the vertical (branch) segment has characteristic 5 ZOO and the horizontal segment between the branches has characteristic impedance Zg / (2) 1/2, the condition of "dB amplitude" is satisfied. The end point of the horizontal segment has a characteristic impedance z0, and it is generally 50 ohms according to the RF industry standard. Although the principle is simple and useful in implementation, because of the electrical length λ / 4, the branch line "coupler must be physically large. For example, in the S-band (2-4 GHz), which is commonly used in communication and radar, In the center of), the free-space wavelength is 10 cm or approximately 4 inches. Therefore, the size of the hybrid part will be at least 1x1 inch and does not include the feed line and connector. The phase-positive parent mix has been designed in the microwave network It has become a standard part. Therefore, due to its physical size, machining has been a preferred manufacturing technology and mechanical workshop technology still exists today. It uses CNC control to replace the necessary milling machine for manual operation, especially in production. Especially in operation. From the 1960s, began to use microstripiine technology to manufacture hybrid parts. This is the beginning of the era of microwave integrated circuit (MIC) technology. 20 It can be used for batch manufacturing and produce far more Cheaper and easier to integrate hybrids. However, because microstrip hybrids are not as effective as the best waveguide or coaxial components, and microstrip lines are inherently more efficient than waveguide or coaxial components Vulnerability also has crosstalk between different lines on a common substrate, so there is a trade-off relationship between microstrip mixed pieces. In order to reduce interference, different microstrip lines must have a large physical separation distance of 74 1244799, so the final mix The "real estate" occupied by the components has not been greatly reduced compared to the design of waveguides or coaxial components. By using electrochemical manufacturing, excellent coaxial structures that can have excellent hybrid couplers can be manufactured. One of these structures is a structure with a very small curvature Half 5 diameter curved bend. Full wave simulation shows that if made from a single-mode coaxial cable without cross-section change, the curved bend will have extremely low insertion loss and return loss. Section 40 The figure shows an example bent portion and its dimensions. The electrical length around the bent portion is 7Γ * RC = * 480 microns = 1.508 mm, and assuming a small radius of 80 microns. Because the end mill or other mining tools 10 Due to the limited size of the cutting tool used, it is difficult to manufacture such a bent portion with a small curvature radius by machining. Because of the tendency to launch the substrate mode, the microstrip line cannot be turned The folds make a small radius of curvature. These patterns always exist in the microstrip, and once emitted represent irreversible losses and coupling to adjacent microstrip lines that share the same substrate. Because the outer conductor is pulled under tension and The inner guide 15 body is compressed due to metal fatigue and metal cracks. It is also difficult to start from a circular coaxial line of a straight line to generate a small radius bend. Due to its ability to form a small radius and low loss bend, it can be used by The meandering (ie, serpentine) winding part shown in Figure 41 greatly reduces the physical range of the long transmission line. This figure shows a plan view of a coaxial line with an inner conductor 1222 and an outer conductor 20 1220. Each coaxial An outer wall of the wire can be shared between adjacent parallel sections. Since the skin depth of the RF current is small (a few microns), this common wall can be made extremely thin. In fact, in some components, the wall between the wires can be reduced to a conductive mesh, and the mesh has the openings of the above properties. Monotonicity) Another important advantage of this assembly is miniaturization.

How the S-branch mixed pieces 1212 of each Η ,,,, and small J slave are made of a meandering section to significantly reduce the overall area occupied by the mixed pieces compared to the white straight portion 1210. All still: ,,, pseudo, members can not be produced, can be compressed to a linear length λ / 12 (electrical length ^ is ^ / 4) to produce a branch of 9 times the area compact (C0mpaCti〇n) factor Line "to obtain excellent performance. It may also have a step-compacting effect. 10, It is better to form a branch line coupler of a meandering section according to the aforementioned technology. In order to facilitate the removal of sacrificable materials during manufacturing, coaxial it parts The space of the outer shield can include openings to facilitate chemical engraving. 1 Enter the shield structure or the inner conductor of the outer conductor. Loss of other radio frequency effects or other perturbations in the network or network. The aperture b ^ 佳 相 # has a small scale phase to minimize the RF loss. For example, the size of L ”makes the aperture appear to be a dominant coaxial mode. A wave having a cutoff frequency that is significantly higher than the pull frequency (for example, 2 times, 5 times, 10 times, 50 times or more). The openings can be located on the sides of the components (such as transmission lines and the like) or on the top or bottom. It may be positioned uniformly along the length of a component, or it may be positioned in groups. During the layer forming process, a dielectric material can be used to completely fill the gap between the inner and outer body or occupy a smaller selected area between the inner and outer conductors for mechanical support. If the dielectric is thin, it may be used in the EFAB program and the $ crystal layer or the like needs to be created on top of the dielectric material. This avoids the problem of subsequent generation of deposited materials "generation W_hr_ing" 76 on 244799 and the formation of bridging portions above the crust. It is possible to partially complete the remaining bulk or selective dielectric materials at the expense of money. Alternatively, it can be backfilled to 10 after the layer formation is completed. The branch line coupler shown in Figures 39 and 42 is laid out in the -horizontal plane. Other implementation methods can be serpentine. Vertically stacked on the substrate 'or it can be composed of a combination of vertical and horizontal elements. In addition, multiple reduction structures can be formed on a single substrate in batches, and then the final (I should further explain here

Body structure? Should here?) We say something about truly 3D structures One application of the branch line coupler or hybrid in Figure 39B is the Butler Matrix (Butler Matrix is a feed element for an antenna array The passive network. The array generates orthogonal radiation patterns (ie beams) from N antenna elements of a one-dimensional or two-dimensional array in space, where N is a power series of 2. "Orthogonal" means that the beam is almost Do not overlap so that they together fill a large area of space. In the ideal case, this area contains the solid angle of the complete 2 疋 steradians above the antenna array plane 20. The conceptual display in Figure 43A is from A series of four orthogonal beams in a four-element linear array.

The Butler matrix is basically a one-to-one mapping between an input transmission line port and an orthogonal beam. By routing the input signal to the required input 77 1244799 into the guidance of Chunlai. This automatic control can be effectively obtained by positioning the power amplifier on each input section and turning the power amplifier on and off as needed. Fig. 43B shows a sample of a circuit using a hybrid branch line light coupler of the above type to generate a signal for an antenna element of a Butler array. The circuit consists of four 90-degree, 3-in-line hybrid light-closing switches, two shirt-degree phase shifters 1302, and transmission line interconnects 1304 of the precise length. Phase shifters are usually made from a length of transmission line that is selected to produce the required path offset. For example, a length of 1/8 is used to generate redundant / 4-phase displacement; a length of 7 / 8λ is used to generate _ 疋 / 4-phase displacement. Note 10: The jumper shown in Figure 43B is simply an example of a line jumper without being coupled. Therefore, a jumper wire can overlay one on the other. This overlay can be achieved by forming structures of additional layers or by lowering the height of individual lines at or across the junction. This narrowing of the line across the junction can be achieved by adjusting the inner width of the outer conductor and the outer width dimension of the inner conductor while maintaining a constant characteristic impedance. Figure 44 shows the narrowing of transmission lines 1332 and 1334 each having an outer conductor 1336 and an inner conductor 1338 near a crossover point 1330. Figure 43C provides a schematic diagram of a four-element Butler matrix antenna array 1310, which uses four meandering hybrid couplers 1312, two delay lines 20 1314, two jumpers 1322, four input sections 1316, and four Antenna elements 1318 (such as patch antennas). Figure 45 provides a schematic diagram of an eight-input section and eight-antenna Butler matrix antenna array, which uses 12 hybrids and 16 phase shifters (of which eight actually produce displacement). As shown, the array also includes multiple jumpers. 78 1244799 The number of passive components of the Butler matrix increases or decreases with the number of required beams. In order to generate N orthogonal beams, the required number of mixed pieces is (N / 2) 10g2N. This increase / decrease rule is similar to the determination method of the complex multiplier required for performing an N-element Fourier transform. The original method requires a multiplier of N2, which is reduced to NlogaN by a fast Fourier transform (FTT). For this reason, the Butler matrix is sometimes referred to as the beam-forming analog of the FFT. Like FFT, it significantly reduces the number of components required to make a shaped antenna, especially when N is large and / or the array is two-dimensional. The performance of the conventional Butler matrix antenna array is not satisfactory in terms of beam quality and bandwidth. When the amplitude and phase division of the hybrid are not exactly 3dB and 90 degrees, respectively, the beam quality starts to deteriorate, especially on the side leaflets. The same axis will use the innate accuracy of E-FAB to produce a hybrid with low dispersion in amplitude or phase between the two output ports, thereby mitigating this problem. Bandwidth is a fundamental issue. From its architecture, the Bart rib matrix will operate perfectly at a given design frequency, but then its beam will begin to ‘’ squint ’, at higher or lower frequencies. Deviation means that the beam is directed into space in the direction of the radiation. Although limiting, this defect is not the main reason why the Butler matrix has not been able to meet the performance requirements of microwave systems. The main reason is the precision problem mentioned above. 20—The use of a Butler matrix of a miniature coaxial hybrid as described herein will provide several advantages. First of all, hybrid parts, phase shifters, interconnects, and input and output ports can all be manufactured on the same substrate at the same time using the manufacturing techniques described above, and can also be manufactured in batches (i.e. Copies). And, because of the non-uniformity of the amplitude and phase shift of the mixing part, the power in the side lobe (not required by 1244799) is significantly increased relative to the (required) main leaflet. The high uniformity achieved in some embodiments substantially eliminates non-uniformities. As a result, these embodiments can be used to produce a hybrid with a uniformity of 0.1 dB and Γ in terms of amplitude and phase, and the problems of beam quality are largely eliminated. Figure 46 shows how a patch antenna antenna can be generated monotonically with a coaxial feed element by E-FAB. A coaxial feed element 1342 (such as a transmission line) is located above a substrate 1344 in the figure. In some alternative embodiments, the coaxial element may be separated from the substrate. The same feeding element includes an inner conductor 1346, which is located between elements having a conductive shielding portion 1348 including a through hole 1352 (such as a shielding portion having a rectangular or square cross-section configuration). An extension 1354 of the coaxial inner conductor projects from the through hole to a planar patch antenna 1356. The vertical extension of the through hole may be, for example, 100 to 500 m. The size of the hole depends on the parasitic impedance caused by the electromagnetic interaction between the central conductor and the hole 15. The completed length and width are preferably 3/8 to 1/2 λ, where I is the wavelength in free space. A ground layer is preferably provided below the patch antenna. This ground plane need not be completely planar and not completely solid, but may be in the form of a dense array of conductive elements. The coaxial components used to form the hybrid coupler and the delay line may form all or part of this ground layer 20. In some embodiments, a small area of dielectric (such as Teflon or polystyrene) can be used to help support the patch (such as the corners of the patch). If the right side of the coaxial component in FIG. 46 carries the signal to and / or leaves the antenna ', it is preferable to use the length of the left coaxial cable to make the driving (or 80 1244799 receiving) electronic component impedance match for the patch. Figure 4 Tian ~ A substrate and a batch of four antenna arrays formed on it: After forming, the substrate can be divided, the array can be separated and processed, and then completed (complete packaging, wire bonding and similar work). The substrate 1372 may be a crystal with integrated circuits] |], which is fabricated electrochemically to accumulate radio frequency components to form a radio frequency system. The antenna GW may be formed on other radio frequency components (for example, a component that needs to form a Butler array). According to some embodiments, the delay line can be made into an extremely dense form by wrapping various portions of the delay line around the shield conductor and arranging them adjacent to each other, or even sharing 10 screen conductors with adjacent line portions. In some embodiments, the lines may be arranged in a common plane, but in other embodiments, they may adopt a three-dimensional layout by stacking the lines on top of each other. In other embodiments, 'these elements may have a spiral pattern and the like. Other embodiments of the invention may include forming and using waveguides and waveguide structures. Some embodiments may include forming discrete components that may be merged manually or automatically, and may include forming entire systems such as signal distribution networks and the like. The following patent applications and patents are incorporated herein by reference in their entirety. The disclosures of these incorporated applications can be combined with the 20 disclosures of this application in many ways. For example, enhanced methods for generating structures can be combined with parts of the disclosure to obtain enhanced structures. Derive enhanced devices, and similar effects. 81 1244799 ♦ U.S. patent application, filed in Japan s ♦ U.S. application publication number, publication date inventor, title one ''-—— 1X1 /,, ----------- • 09 / 493,496 -January 28, 2000 ^ Cohen '' "Methods for Electrochemical Manufacturing" see 10/677, 556-October 1, 2003. Alignment and / or retention of US f 2 series receiving members • 10/830, 262-April 21, 2004— ^ In the three-dimensional structure of the layer view, "using the seed layer with an adhesive mask and including dielectric micro-removal of the seed layer to call the father, i" 1 Spear system with high size ratio micro-electromechanical structure • XX / XX, XXX-May 7, 2004 (Case No. P-US099-A-MF) • 10/271, 574-October 15, 2002, 2003- 0127336A-July 10, 2003 • 10/697, 597-December 20, 2002 Powder Coated Rice • 10/677, 498-October 1, 2003 • 10/724, 513-November 2003 On the 26th, the emeralds formed a three-dimensional knot • 10/607, 931-June 27, 2003 • XX / XXX, XXX-May 7, 2004 (Case No. P-US093-A-MF) • 10 / 387, 958-March 13, 2003 • 2003-022 168A-December 4, 2003 • 10/434, 494-May 7, 2003 • 2004-0000489A-January 1, 2004, curtain plating operations • 10/434, 289-May 7, 2003 Yilu 20040065555A-Attachable for the activation of warm air female chicks on April 8, 2004 • 10/434, 294-May 7, 2003 • 2004-0065550A- April 8, 2004 fi, with enhanced Post-deposition treatments are more complete • 10/434, 295-May 7, 2003 • 2004-0004001A-January 8, 2004 • 10/434, 315-May 7, 2003 • 2003-0234179A -"December 25, 2003", "Installing with a sacrificial metal pattern" Appeal 10/434, 103-May 7, 2004 • 2004-0020782A-February 5, 2004 • XX / XXX, XXX -May 7, 2004 (Case No. P-US104-A-MF) ilil; Weaving Hearing • 10/434, 519-May 7, 2003 Lu 2004-0007470A-January 15, 2004 Mine, Sfi f • XX / XXX, XXX-May 7, 2004 (Case No. P-US105-A-MF) Talk, "For the manufacture of structures by electrochemical methods • 10/309, 521-December 2002 3 days

82 1244799 There are many other embodiments of the present invention. Some of these embodiments may be based on a combination of the disclosure herein and one of the various disclosures incorporated herein by reference. Some embodiments may not use any blanket deposition procedures and / or they may not use planarization procedures. Some embodiments may include the selective deposition of a plurality of different materials on a single layer or on different layers. Some embodiments may use blanket deposition procedures that are not electrodeposition procedures. Some embodiments may use selective deposition procedures that are not attachable contact mask procedures and not even electrodeposition procedures on some layers. Some embodiments may use non-attachable contact screens or non-contact screens. 10 Some embodiments may use nickel as a structural material, other embodiments may use different materials such as copper, gold, silver, or any other electrodepositable material that is separable from the sacrificial material. Some embodiments may use copper as a structural material with or without a sacrificial material. Some embodiments may remove a sacrificial material, other embodiments may not remove it. In the 15-knife embodiment, a chemical operation, an electrochemical operation, or a melting operation can be used to remove the sacrificial material. In some embodiments, the anode may be different from the attachable contact mask support and the support may be a porous structure or other perforated structure. Some embodiments may use multiple adherent contact masks with different patterns to deposit 20 materials of different selective patterns on different layers and / or different portions of a single layer. In some embodiments, when the deposition occurs by pulling the attachable contact mask away from the substrate to enhance the deposition depth, the seal between the attachable portion of the cc mask and the substrate can be made from The attachment material face is offset to the inside edge of the attachable material. In view of the disclosure herein, those skilled in the art will understand many other embodiments of the invention, alternative designs, and uses. Therefore, the present invention is not intended to be limited to the specific exemplary embodiments, alternatives, and uses described above, but is only defined by the scope of patent applications. [Schematic description 3 5 Figures 1A-1C schematically depict side views of various stages of a CC mask plating process, and Figures 1D-1G schematically depict a method using a different type of CC mask. Side views of various stages of the CC mask plating process; Figures 2A-2F schematically depict side views of the various stages of an electrochemical manufacturing process applied to form a specific structure, in which a 10 structure is deposited on the blanket Selective deposition of a sacrificial material at the same time as the material; Figures 3A-3C schematically depict side views of various sub-assemblies that can be used to manually implement the electrochemical manufacturing method depicted in Figures 2A-2F. Figures 4A-4I schematically depict a 15-layer structure using the adhesive mask to form the first layer, in which a blanket deposit of a second material is spread over the opening between the deposition locations of the first material and the first material Itself; Figure 5A depicts a perspective view of a coaxial filter element including shorted spokes, Figure 5B depicts a plane 20 diagram of the coaxial filter of Figure 4A along lines 5B-5B; Figure 5C depicts a coaxial filter of Figure 4A along Plan of line 5 (c) -5 (c); Figure 5D depicts a plan view of the central portion of a coaxial filter element, showing five sets of filter spokes (two in each group) along the length of the filter; 1244799 Figures 6A-6C depict separate sets of spokes (four spokes in each group) ) End views of rectangular, circular and oval filter elements; Figures 7A-7D depict examples of alternative spoke configurations that may be used in filter elements; Figures 8A and 8B show perspective views of curved coaxial filter elements Figures 9A-9C depict alternative coaxial filter components that use protrusions along the inner or outer conductor to help filter signals; Figure 9D depicts a plan view of the central portion along the length of an S-shaped two-pole coaxial filter, 10th Figures 10A-10D depict plan views along the central portion of a horseshoe-shaped coaxial transmission line with varying degrees of slanting; Figures 11A and 11B depict plan views along the central portion of a coaxial transmission line and a coaxial filter member, respectively. The wavy oscillating portion is included on the inner surface of the smaller radius side; FIG. 12A depicts a linear tripolar bandpass coaxial filter along the root segment pair to form one of the poles Plan view of the central part of the length (viewed from above); Figure 12B depicts the end view of the filter of Figure 12A, showing the rectangular configuration of the structure; Figure 12C depicts a curved shape with a root support Plan view of the central part of the length of a three-pole band 20-pass coaxial filter (viewed from above); Figure 13A depicts a plan view of the central part of the length along an S-shaped two-pole band-pass coaxial filter with a root support ( (Viewed from above); Figure 13B depicts a perspective view of a slightly modified version of the filter in Figure 13A of 1244799, which is a slightly modified version of MEMAB's EFAB ™ electrochemical manufacturing technology and after the sacrificial material has been removed; brother 13C is field painting -The three-dimensional features of the partially formed sacrificial vessel (similar to that shown in Fig. 13B and after the sacrificial sacrifice has been removed from the structural material) are embedded in the sacrificial material and released from the sacrificial material. Coaxial h-reading three-dimensional view, in which the outer guide system of the coaxial component includes holes (predetermined microwave entry and exit, Figures 15A-15D show plots for various plastic transmission vs. frequency; no Same filter design according to mathematical model 10 15 20 Figure 16 depicts the use of conductive materials and a single dielectric material in the manufacture of the required device / structure. • The flow of Ho's sample electrochemical manufacturing process. Figure 17A depicts Using the end view of the __ structure produced by the program in Fig. 16, Fig. 17B depicts a perspective view of the coaxial structure of Fig. 17 and Fig. 18; Figs. 18A-18J show the application of the _program residue to form the first And the structure of Figure 17B, Figure 19 depicts a flow chart that includes a sample electrochemical fabrication procedure using three and only materials; Figures 20A and 20B depict various structures ^ ^ structure of conductive elements and之 The three-dimensional view of the support-free structure formed by the program extension of Figure 19; Figures 21A-21T show the application of the program flow chart of Figure 2 to form a coaxial structure similar to that shown in Figure 20A, ^, The two types of conductive materials are J,, and. The sacrifice material that is removed after the formation layer replaces the sacrifice material that is removed— / ·,

Figure

86 1244799 Figures 22A-22C show an extension of the removal and replacement procedure of Figures 21R_21T; Figures 23A and 23B depict a flow chart of a sample electrochemical manufacturing process using two conductive materials and a dielectric material; Figure 24 shows a perspective view of a structure that can be extended using the procedures of Figures 23A and 23B; Figures 25A-25Z show a side view of the same layer formation procedure according to Figures 23A and B, which is used to form a A coaxial structure of a dielectric material, and wherein the dielectric material only supports the inner conductor; Figures 10A through 26F show that when a seed layer is required before the first conductive material is deposited for the fourth layer structure, the 25H- An alternative to the program of the 25K figure; Figure 27 depicts a perspective view of a coaxial transmission line; Figure 28 depicts a perspective view of a RF contact switch; 15 Figure 29 depicts a pair of periodic antennas (iog-periodic antenna) Figures 30A and 30B depict a perspective view of a sample toroidal inductor rotated about 180 degrees relative to each other, and Figure 30C depicts a toroidal inductor formed according to an electrochemical manufacturing process 3D view; Zun 20 Figures 31A and 31B depict a perspective view of a spiral inductor design and a stacked spiral inductor formed according to an electrochemical manufacturing process; Figure 31 (Figure 3 depicts the 31st and 31st ugly inductors) One variation: Figures 32A and 32B show two possible designs in a comparative way. The design of Figure 32B can provide smaller ohmic resistance than Figure 32A and may change the total inductance 87 1244799. Figures 33A and 33B Schematic depicting two alternative inductor configurations that minimize losses while maintaining a high level of coupling between the coils of the inductor; Figure 34 depicts a perspective view of an inductor; 5 Figures 35A and 35B depict a variable capacitor 112, respectively A perspective view and a side view of an example; Figures 36A-36B depict end views of two example coaxial structures, in which the central conductor is provided with a cross-sectional configuration that increases surface area relative to its cross-sectional area; 10 Figure 37 depicts A side view of an integrated circuit having a connection pad for connecting an internal signal (such as a clock signal) to a low-dispersion transmission line to conduct conduction with other parts of the integrated circuit; section 38A Figure 38B shows the first and second generation computer-controlled electrochemical manufacturing systems (ie, the efabtm microfabrication 15 system) that can be used to implement the procedures described here. Figure 39 depicts a plan view of a conventional four-port hybrid coupler. Figure 40 depicts a plan view of a curve and dimensions in the same axis; Figure 41 depicts a plan view of a coaxial line with a common outer conductor along the transmission line section; 20 Figure 42 shows how a branch line can be mixed Each λ / 4 segment is made into a serpentine segment to significantly reduce the overall area occupied by the hybrid compared to the conventional linear version; Figure 43A shows a quadrature beam from one of a series of four-element linear arrays; 88 1244799 Figure 43B shows a Butler array having an antenna element including a signal generated by a circuit using a hybrid branch line coupler and a two-phase shifter; Figure 43C provides a schematic diagram of a four-element Butler matrix antenna array. Four meandering hybrid couplers, two delay lines with two crossovers, four input sections and four antenna elements (such as patch antennas); Figure 44 shows a crossover point of a narrowed transmission line each having an outer conductor and an inner conductor; 10 15 Figure 45 provides a schematic diagram of an eight-input section and eight-antenna Butler matrix array, which uses 12 mixing sections, 16 Phase shifters (of which eight actually produce a displacement) and eight antennas; Figure 46 shows how a patch antenna radiation element can be attached to a coaxial feed element; Figures 4 and 7 depict one on which a batch can be formed Substrate for four 8 X 8 antenna arrays. [Representative symbol table of the main elements of the figure] 2 ... sacrificial material (first material) 10 '... attachable material 12 ... common support / anode 12', 62 ... anode 14, 66 ... keying solution 16 ... opening 18 ... Power supply 20 ... Multilayer structure 4 ... Structural material (second material) 6, 82, 1008, 1154, 1344, 1372, Substrate 8 ... CC cover 8 '... Cover 10 ... Can be attached Or deformable insulator 89 1244799 22 ... material 22 '... deposits 26a, 26b, 654 ... open dagger 32 ... exemplary artificial electrochemical manufacturing system 34 ... substrate holding sub-system 36 ... CC cover Sub-system 38 ... blanket deposition sub-system 40 ... planarization sub-system 42 ... linear slider 44 ... actuator 46 ... indicator 48 ... carrier 52 ... polishing plate 54 ... precision X-stage 56 ... Precision Y stage 58 ... reservoir 64 ... electrolyte reservoir 68 ... foot 72, 74 ... frame 84 ... patternable photoresist 86 ... photoresist surface 88 ... substrate surface 92⑻-92 (c) ··· open or open Hole 94 ... First metal 96 ... Second metal 98 ... Three-dimensional structure 102 ... RF / microwave filter 104 ... First group 104a-104d, 312, 314, 322, 324, 332, 334, 342, 352, 354, 356, 358, 394, 396 ... spokes 242, 244 ... size 316, 336 ... rectangular outer conductors 326, 362, 362, 608, 842, 1220, 1336 ... outer conductors 372, 374, 376, 378 ... outer conductor protrusions 382, 384, 386, 388, 394, 396, 398 ... protrusions 392, 392 ', 616, 844, 1222, 1338, 1346 ... inner conductors 402, 404 … Coaxial segments 412, 414, 416, 418, 422, 424, 426, 428, 412, 414, 416 ,, 418 ,, 422, 424, 426, 428, .... turning section 412 " , 414 ", 416", 418 ", 422", 424 ", 426 ,, 428" ...

90 1244799 432, 434 ... Via miter section 728 ... Embedded dielectric regions 1162, 1172 ... Coaxial transmission lines 734-1, 734-2 ... Conductive material 436 ... Protrusions 438, 440 ... Coaxial filter member 442 ... Simple Curves 522, 524, 622, 624 ... Root segments 552, 554 ... Side passages 556 ... Outer conductors 602, 848 ... Enter ports 604, 850 ... Exit ports 606 ... Channels 612, 614 ... Paths 616, 606 , 630 ·· Filter, 632 ·· Ground lead 634 ... Signal lead 642 ·· Hole (opening) 652 " 656, 702 ·· Structural material 704 ... Sacrificable material 706 ... Member 722 ... Coaxial structure 724 ... outer conductive element 726 ... internal conductive element 730 ... external dielectric region 734-1 '... selectively deposited second conductive material 734-2', 856,856-1 ... Conductive materials (SCM) 736-1, 736-1, 736-2, 846, 860, 996 ... Dielectric materials 736-2 ··· Second layer dielectric materials 738-2, 738-2 '··· Seed layer 738-2 "... Xuanjing layer portion 846 ... Dielectric support structure 846 '... Modified dielectric structure 852 ... Blank substrate 854-2, 854-3, 854-4, 854-5, 858-4 ··· area 854 ... A conductive material (FCM) 854-1 ... first conductive material 854-Γ ... initial deposit a first layer 854-4 "·· initial deposits the fourth layer 858 third conductive material ?????

• The outer wall (shield wall) of the coaxial element 854-6, 854-7, 856-2, 856-3, 1134, 1144 ... · Central conductor 856-4, 856-5, 856-6, 856-7, 91 1244799 860 '... dielectric 862 ... outer wall 864 ... internal structure 866 ... void 994 ... main conductive material 1002 ... outer conductive element 1004 ... internal conductive element 1006, 1348 ... outer conductive shield 1010 , 1038, 1052 (a), 1052 (b), 1068 (a), 1068 (b) ... spacer 1022 ... switch 1024 ... second beam 1026 ... cantilever 1028 ... control electrode 1030a-1030 (c) ... Base 1032 ... Log-periodic antenna 1034 (a) -1034 (j) ... 2-pole length 1036 ... common feed line 1042, 1062, 1072, 1082, 1086 (a), 1086 (b) ... inductor 1044 ... Conducting post 1046 ... Outer conducting post 1048⑻, 1048 (b) ... Circuit connection element 1050 (a) ... Upper bridge element 1050 (b) ... Lower bridge element 1064 (a) -1064 (g) ... coil 1066 ... Connection bridge part 1074 (a) -1074 (k) ·················································· 1094 (a) b) > 1104 (a) '1104 (b) ... board set 1096 ... Weir 1098 (a), 1098 (b) ... Combination pad 1102 ... Variable capacitor 1104⑻ ... Capacitor plate 1106 ... Spring element 1108 ... Parallel electrostatic actuator 1110 ... Spring support 1112 ... Actuator pad 1114 ... post 1116 ... fixed drive plate 1118 ... removable drive plate 1124, 1126 ... support post 1128 ... fixed capacitor plate contact pad

92 1244799 1132, 1142 ... Coaxial components 1152 ... Integrated circuit 1156 ... Contact pads 1158 ... Protective layers 1164, 1174 ... Abutment or pedestal 1166, 1176 ... Wires 1200, 1202 ... Passing wires 1204, 1206 ··· Vertical branch 1300 ... Hybrid coupler 1302 ... Phase shifter 1304 ... · Precision length transmission line interconnect 1310 ... Four-element Butler matrix antenna array 1312 ... Serpentine hybrid coupler 1314 ... Delay line 1316 ... Input Section 1318 ... antenna element 1322 ... crossover section 1330 ... crossover point 1332 '1334 ... transmission line 1342 ... coaxial feed element 1352 ... through-hole 1354 ... extension 1356 ... flatness patch antenna 1374 ... ·· antenna PSL · ·· primary seed layer SSL · ·· secondary seed layer L1 ... first layer L2 ... second layer L3 ... third layer L5 ... fifth layer L6 ... sixth layer L7 ... seventh layer L4 ... Fourth layer Z0 ... Characteristic impedance λ ... Wavelength λ0 in free space ... Central frequency wavelength blocks 702, 704, 706, 708, 710, 712, 714, 716, 718, 720 ... Step blocks 802, 804 , 806, 808, 810, 812, 814, 816, 818, 822, 824, 826, 828, 830, 8 32, 834 ... Step blocks 902, 904, 906, 908, 910, 912, 914, 916, 918, 922, 924, 926, 928, 934, 936, 938, 942, 944, 946, 948, 952, 954, 956, 962, 964, 966, 968, 970, 972, 974, 978 ... steps

93

Claims (1)

1244799 Scope of patent application: The same car consists of radio frequency or microwave components, including 1. A type for guiding or controlling radiation: a. At least one of the conductive structures—RF or microwave—entering port. B. The conductive structure At least—the RF or microwave chirp passes through the conducting structure when it leaves the port; 10 ^ The central 'body' extends along the at least one channel that is a length from the Langren port to the port; and wherein the conductive structure includes one of the Z openings extending from the channel to an outer region The openings have a size that is not greater than the wavelength or 0, whichever is larger, and does not allow significant radiation to pass through at the time. The construction of the patent claim No.!, Wherein at least some of these openings are used to remove a sacrificial material. 3. The component of the scope of the patent application] wherein at least part of the special opening is used to receive-to help retain the dielectric in a desired relative position between the central conductor and the conductive structure. 4. The component according to item [Scope of the patent application], wherein the material structure and the central conductor are monotonic. As for the component of the scope of the patent application, at least a part of the central conductor or the conductive structure contains a material formed from a plurality of successively deposited layers. 94 5 1244799 6. According to the scope of the application for patent; item of!, At least a part of the central conductor or the conductive structure contains materials formed from plural electrodeposition operations ^. ^ 7. The member of the scope of patent application (1), wherein a cross-sectional dimension of the channel which is perpendicular to the light propagation direction along the channel is less than: mm. 10 15 20 8. As the oldest component in the scope of patent application, the cross-sectional dimension of the channel that is perpendicular to the direction of light propagation along the channel is less than 0.5 mm. '9. As for the oldest component in the scope of the patent application, the cross-sectional dimension of the channel that is perpendicular to the direction of the ray propagation along the channel is less than about 0.2 mm. 10 = The w-th member of the patent application scope, wherein at least a part of the channel has a substantially rectangular shape. The component according to the scope of the patent application, wherein at least a part of the central conductor has a substantially rectangular shape. 12. As for the member in the scope of the patent application, the cut channel extends along a three-dimensional path. Ugly 13. The component according to item 12 of the patent application scope, wherein the three-dimensional path includes a three-dimensional spiral. 14. The component according to the second aspect of the patent application, wherein the component includes a hybrid coupler. As the mouth 15. If you are applying for a shop to surround the second element, the towel transfer includes a delay line 0 95 1244799 16. The component according to item 1 of the patent application scope, wherein the component includes an antenna. 17. The component as claimed in claim 16, wherein the antenna comprises an antenna array. 18. The component as claimed in claim 16, wherein the antenna is fed by a Butler matrix or a Butler matrix. 19. The component of claim 16 in which the antenna array includes a patch antenna array. 20. The component as claimed in claim 16 wherein the antenna array is fed by a signal transmitted through a Butler matrix and wherein each input to the Butler 10 Le matrix is controlled by a power amplifier. 21. The component according to item 1 of the patent application, wherein at least one axis is arranged in a meandering form. 22. The component of claim 21, wherein the at least one meandering form comprises a single 15 common conductive shielding structure located between at least two different parts of the conductive structure. 23. For the component of the scope of patent application, the two channels are positioned adjacent to each other, where the two channels are separated by a single conductive shielding structure. 24. As for the component of the scope of application for the first item, it is partially formed by using at least one or more of the following 20 rows of operations: a. Selective electrodeposition of a first conductive material and electrodeposition of a second conductive material, wherein the first One of the first or second conductive material is a sacrificial material and the other is a structural material; b. Electrodepositing a first conductive material, selectively etching the first structure 1244799 material to generate at least one void, And electrodepositing a second conductive material to fill the at least one void; c. Electrodepositing at least one conductive material, depositing at least one flowable dielectric material, and depositing a seed layer of conductive material to prepare the next layer of electrosink 5 Formation of a composite material 'or d. Selectively electrodeposit a first conductive material, then electrodeposit a second conductive material, and then selectively etch one of the first or second conductive materials, and then electrodeposit a third A conductive material, wherein at least one of the first, second, and third conductive materials is a sacrificial material and at least one of the remaining two conductive materials is a structural material. 25. If the component of the scope of the patent application is at least partially formed using one or more of the following operations: a. Separate at least one sacrificial material from at least one structural material; b. Separate a first sacrificial material From (a) to the second sacrificial material and (b) 15 at least one structural material is separated to generate a void, and then at least a portion of the void is filled with a dielectric material, and then the second sacrificial material is removed from the A structural material and separated from the dielectric material, or c. Filling a void in a structural material by immersing a magnetic or conductive material in a flowable dielectric material and subsequently causing the 20 dielectric The electric material is solidified. 26. For example, the component of the scope of the patent application, wherein the component includes one or more of the following: a low-pass, a high-pass filter, a band-pass filter, a reflection-based filter, an adsorption-based filter, a leak Leaky wall filter, a delay line, an impedance for connecting other functional components 97 1244799 distribution structure, an antenna, a feeder, a directional coupler, or a synthesizer (such as a phase orthogonal Hybrid, a hybrid ring, a Wilkinson synthesizer, a magic TEE). 27. As for the component of the scope of the patent application, the component includes one or more of the following: a micro-miniature coaxial component, a transmission line, a low-pass filter, a high-pass filter, a device, a band-pass filter, a reflection-based Filter, a suction-based filter, a leaky wall filter, a delay line, an impedance matching structure for connecting other functional components, a directional coupler, and a power combiner (such as Wilkinson) , A power splitter, a mixed 10-combiner, a magic TEE, a frequency multiplexer, or a frequency demultiplexer, a pyramidal (smooth wall) feeder antenna, and / or a scale (wave Pleated wall) feeder antenna. 28. A method for manufacturing a microdevice, comprising: a. Depositing a plurality of layers of material, wherein the deposition system of the materials of each layer includes: i depositing at least one first material; ii. Depositing at least one first material Two materials; and b. Moving at least a portion of the first or second material after the plurality of layers are deposited; 20 wherein a structure generated from the deposition and the removal is provided as a radio frequency or microwave controlled, guided At least one structure of a transmitting or receiving member, including a.-At least one radio frequency or microwave radiation in the conductive structure enters the port; b. At least one radio frequency or microwave radiation in the conductive structure leaves the port; 98 1244799 C. at least one A channel, which is generally defined by the conductive structure on the side, and the radio frequency or microwave radiation passes through the conductive structure when it migrates from the at least one entry port to the at least one exit port; d. A central conductor along the The at least one channel extending from the entry port to one of the exit ports by a length of 5; and wherein the conductive structure includes one or more openings extending from the channel to an outer region, wherein Wherein the hole has a larger size of 200 microns or no greater than 1/10 of the wavelength and which without significant predetermined radio frequency radiation through. 10 29. A four-port hybrid coupler comprising a material including a plurality of adhesive layers of four micro-miniature coaxial elements, the first of the four coaxial elements extending between two of the four ridges, and The second of the coaxial components extends between the other two of the four ports, while the remaining two coaxial components extend between the first and second coaxial components, at least one of which 15 coaxial At least a portion of the elements are arranged in a meandering length. 30. The four-port hybrid coupler of claim 29, wherein the meandering form includes a single common structure between at least part of adjacent central conductor segments of one or more coaxial elements. 31. A method for manufacturing a circuit for supplying signals to N antenna elements of a passive array to generate 20 multiple beams, comprising: a. Depositing a plurality of adhesive layers of materials to form (N / 2) log2N four A port hybrid coupler, each of which includes four micro-miniature coaxial elements, each coaxial element extending between an individual pair of ports of the hybrid coupler to couple a pair of coaxial elements to each port; and 99 1244799 b. A phase shifting member connects at least part of the hybrid couplers to other hybrid couplers to form a Butler matrix. 32. The method of claim 31, wherein the deposition of each layer of material comprises: 5 a. Selective deposition of at least one first material; b. Deposition of at least one second material; c. A portion is planarized, wherein the plurality of layers are deposited, and at least a portion of the first or second material 10 is removed after the plurality of layers are deposited. 33. A Butler matrix for supplying signals to N antenna elements of a passive array to generate a plurality of beams, which includes (N / 2) log2N four-port hybrid couplers, wherein each of the four-port hybrid couplers is coupled The device contains four miniature coaxial components, the first of the four coaxial components extends between two 15 of the four ports, and the second of the coaxial components extends the other two of the four ports. Between them, and the remaining two coaxial elements extend between the first and second coaxial elements, at least a portion of the length of at least one of the coaxial elements is arranged in a meandering form. 34. The Butler matrix of claim 33, wherein the meandering form 20 comprises a single common shielding structure between at least part of adjacent central conductor segments of one or more coaxial elements.