TW539845B - Sheet beam-type inspection device - Google Patents

Abstract

An electron beam apparatus, such as a sheet beam based testing apparatus, comprises: an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam; and a detector for detecting the secondary electron beam image projected by the electron-optical system. Specifically, the electron beam apparatus comprises a beam generating means 2004 for irradiating an electron beam having a particular width; a primary electron-optical system 2001 for leading the beam to reach the surface of a substrate 2006 under testing; a secondary electron-optical system 2002 for trapping the secondary electrons generated from the substrate 2006 and introducing them into an image processing system 2015; a stage 2003 for transportably holding the substrate 2006 with a continuous degree of freedom equal to at least one; a testing chamber for the substrate 2006; a substrate transport mechanism for transporting the substrate 2006 into and out of the testing chamber; an image processing analyzer 2015 for detecting defects on the substrate 2006; a vibration isolating mechanism for the testing chamber; a vacuum system for holding the testing chamber at a vacuum; and a control system 2017 for displaying or storing positions of defects on the substrate 2006.

Description

539845 A7 B7 丨 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

V. Description of the invention (1) [Technical scope] Design rules in semiconductor manufacturing processes (Design Rules, standard specifications set by the semiconductor device industry) are ushered in the advent of the 100nm era, and their production types have been based on DRAM. The main method of small varieties and large yields gradually shifted to the multi-variety small-yield method mainly based on SOC (Slllcon on ehlp). With this kind of change, because the number of manufacturing processes increases, the yield of each process must be improved, so the inspection of defects caused by the manufacturing process also becomes particularly important. The present invention relates to a charged beam type inspection device for a wafer beam type inspection device that is suitable for inspecting a wafer after completing various procedures of a semiconductor manufacturing process, specifically, to a wafer beam inspection device that uses an electron beam such as a charged particle beam , And a semiconductor device manufacturing method and an exposure method using the inspection device. [Background Art] As semiconductor devices become more highly packaged and patterns are miniaturized, inspection devices are required to have tritium decomposition energy and high yield. In order to detect defects in wafer substrates under the 100nm design rule, a decomposition energy of 100 nm or less is required. As the manufacturing process of the high-concentration method of semiconductor devices increases, the inspection volume increases, and more southern quality products are required. Rate (through put). In addition, with the advancement of multi-layered semiconductor devices, it is also required that the inspection device be provided with a function capable of detecting a contact failure (electrical defect) in a contact via (via) connecting the wiring between the layers. Currently, an optical type defect inspection device is mainly used, but in terms of disassembly energy, poor contact and the like, the defect inspection device using an electronic wire will gradually replace the optical type defect inspection device and become the mainstream of the inspection device. However, the electronic wire defect inspection device has

--------------.— (Please read the notes on the back before filling this page). • Line ·

539845 »A7 * ------------ B7 V. Description of the invention (1) In the memory device, or rotate the image to the CRT (cathode set limit tube). : The above is the principle of SEM (scanning electron microscope). By this method: the obtained image can detect defects in semiconductors (usually S0 wafers in the middle of the process). The inspection speed equivalent to the production rate of good products is It is determined by the amount of primary electron beams (current value beam diameter, detector response speed. Beam diameter 0.1 μΓΠ (think of it as the same resolution energy), current value ι〇〇ηΑ, response speed of the detector 100MHZ etc. are now the highest values. At this time, the inspection speed is 20 cm for wafers with a diameter of 8 hours / piece. In the SEM inspection device described above, the above inspection degree has almost reached its limit. If you want to achieve a faster speed, which means that if you want to improve the production rate of good products, you must use other new methods. [Invention of the Invention] The present invention relates to an electronic wire suitable for a sheet-type beam inspection device. Device '· A method of manufacturing a semiconductor device using the device and a method of exposing it. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with China National Standard (CNS) A4 (210x 297 mm) ) Can be made up of the secondary electron beam 1 generated by the substrate, and introduced into a secondary electron optical system of an image processing system; 539845 A7

Printed by a consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, which can maintain the aforementioned substrates at least with a certain degree of continuity for transfer; 5 an inspection room for the aforementioned substrates; a substrate transfer for carrying the substrates into the aforementioned inspection rooms Mechanism; image processing and analysis device for detecting defects of the substrate; vibration damping mechanism of the inspection room; a vacuum system for supporting a vacuum state of the inspection room; and a position for indicating or storing the defect of the substrate Control system. μ In a second embodiment of the present invention, there is provided an electronic wire device applicable to an inspection device for irradiating an electron beam on an inspection object to inspect the inspection object; and a semiconductor device using the same Production method. A second embodiment of the present invention includes electron optics that irradiates a primary electron beam from an electron beam source onto the inspection object and projects an image of a secondary electron beam released by the primary electron beam irradiation. A detector for detecting a secondary electron line image projected by the aforementioned electron optical system; a table device for supporting the inspection object and making it relatively move with the aforementioned electron optical system; Clean gas flows into the inspection object to prevent dust from covering the small environmental device on the inspection object; it is used to store the workbench device and control the work under vacuum state -------- tT --- ------ (Please read the precautions on the back before filling out this page). This paper size is applicable to China National Standard (CNS) A4 (210x297 mm) 4 312766 ι39845 Manufacturing A7 B7 V. Description of the invention (5) Working room; at least two or more of which are arranged between the aforementioned small environmental devices and working rooms, which are independent and can be controlled in a vacuum state A loading chamber provided with: a transfer device that transfers the inspection object between the small-scale environment device and the one loading chamber; and a transfer device that can transfer the inspection object between one of the loading chambers and the table device Loader of another transfer device. An inspection device is provided, which is composed of a vibrating gate device supporting the aforementioned working room and loading chamber. In addition, a second embodiment of the present invention includes: irradiating a primary electron beam from an electron beam source to the inspection object; the secondary electrons released by the primary electron beam irradiation by the primary electron beam using a deceleration electric field lens; An electronic optics system that accelerates a line linearly and projects its image; a detector for detecting a secondary electron line image projected by the aforementioned electronic optics system; arranged on the deceleration electric field type objective lens and the inspection object An electro-optical device having an electrode for controlling the electric field intensity on the irradiation surface of the primary electron beam of the inspection object; a table device for supporting the inspection object and moving relative to the electron optics system; It is used to store the workbench device and control the working room in a vacuum state; supply the inspection object to the loader of the workbench device in the workroom; and irradiate the inspections arranged in the workroom with an electron beam. ------------- ^ -------- ^ --------- ^ (Please read the connotation on the back before filling this page) Be applicable National Standard (CNS) A4 ^^ ⑵◦ χ 297? ^ 5 ηττδ ^ · 539845 V. Description of the invention (6) Object to reduce the charging difference of the aforementioned inspection object, or a charging device intended to be charged And a potential applying mechanism for applying a potential to the vibration door device. In the inspection device described above, the aforementioned loaders are provided with: each independently capable of controlling the environment! The loading chamber and the second loading chamber; the first inspection object can be transported between the first loading chamber and the outside! The transfer device and the second loading chamber are installed in the second loading chamber. The second transfer device that transfers the inspection object between the loading chamber and the workbench device, and the electronic wire device is provided with a partitioned small environmental space to prevent the feeding of clean gas into the loader. The carried-in inspection object can prevent dust from adhering, and at the same time, it can support the loading room and the above-mentioned working room by means of a vibration breaking device and a branch device. In addition, in the above-mentioned inspection device, ^ ^ _ is provided with an alignment control device for determining the relative position in the aforementioned electro-optical system and observing the inspection and controlling the alignment; for inspecting the aforementioned process The Kai Yishi two & per-interference distance measuring device can also use the aforementioned alignment control device to print an image of the inspected object using the map of the Intellectual Property Workers Consumer Cooperative of the Ministry of Economic Affairs, which is present in the inspection object. Coordinates, 敕 士 h, the position adjustment of the inspection object just described can also include the aforementioned small 敕. The meaning, +, ^ The coarse position adjustment performed in the second room of the elder brother ^ $ XY direction Adjustment of the position and position adjustment of the mouth turning direction. In addition, the second embodiment of the present invention provides a method for manufacturing a rich conductor device, which can be used to inspect defects in a circle. Detecting crystals in the middle of or after the production process "Zhang Zhishi 312766 7 7 The third embodiment of the present invention belongs to a kind of electrons that image the electron beams released by a plurality of electron beam sources on the sample surface by means of an electron optics system. The wire device is characterized by providing an electronic wire device provided with a dividing plate for separating the electron wire source from the electron optical system, a knife partition, and a vertical and horizontal comparison for passing the electron wire. The hole is provided by two or more holes on each electron source. Each of the holes is formed at a position outside the optical axis of the electron source. The partition plate is highly rigid. Ideally, it is preferable to provide the aforementioned electron beam source and the aforementioned electron optical system on the aforementioned partition plate. In addition, the third embodiment of the present invention also provides a method for manufacturing a semiconductor device using the aforementioned electron beam device, Wafer evaluation during the manufacturing process. The fourth embodiment of the present invention is an evaluation device. By means of an electrostatic optical system including an electrostatic lens, an electron beam is incident on the sample, and then the aforementioned electron beam is used. Incident, detection, the secondary electron line generated by the sample and the formation of data, and then based on the foregoing data to evaluate the "Sample" is characterized by: m as the number of metals above 5Eν to plate the electrodes in the electrostatic optical system With this kind of evaluation device, since the metal ore electrode or a certain part of the electrode with a working level of 5ev or more will be used, the secondary electron rays released by the electrode will be reduced, which is less likely to occur between the electrodes. The phenomenon of discharge is not easy to cause insulation damage between the electrodes. 539845 A7 B7 Five paper sizes are applicable to the Chinese invention. White: The metal used to plate the electrodes in the aforementioned electrostatic optical system is best to make the number: 5 = 2 = The main alloy. At this time, if you can use platinum (work off-part, the platinum-based alloy into the money electrode or some of the electrode is also less: the amount of secondary electrons out of the electrode is reduced. The phenomenon of discharge reduces the insulation damage between the electrodes. This applies to the semiconductor wafer, or even if the pattern of the semiconductor wafer is powered on, the platinum on the electrode 'does not cause deterioration of the transistor', so it is applicable For the inspection of semiconductor wafers, the fourth embodiment of the present month also provides an evaluation device for testing electrostatic optical systems that contain electrostatic lenses, and allowing electrons to enter m ', and inspecting the incident electrons through the aforementioned electrons. Before the evaluation of the above-mentioned specimens, and before the evaluation according to the foregoing materials, and: the electrostatic lens is located between at least 2 or more electrodes and 2 or more electrodes with a potential difference, and it is included to support the 2 to V or more Insulation material for the electrode: the first two and less than two electrodes should have at least one electrode on one side. "The first electrode surface that forms the shortest electrode distance between at least two of the electrodes; between the electrodes; The second electrode surface having a distance longer than the first! Electrode surface; the step difference in the direction between the at least two or more electrodes between the first electrode surface and the second electrode surface, and the insulating material is in the at least two Between the electrodes, the electrode surface of the second electrode surface and the electrode on the other side will be supported in a vertical manner, and the shortest distance between the aforementioned at least two electrodes of the insulating material is ~ 312766; 1.!- ------ # (Please read the back issues of the note and then fill in this page) book * Shu 539845 A7

Printed by the Consumer Affairs Agency, Intellectual Property Office of the Ministry of Economic Affairs. 5. Description of the invention (9) The length will be approximately the same as the distance between the electrodes of the supported electrode part. " According to this evaluation, if the electrode is supported by an insulating material with a longer creepage distance, the discharge between the electrodes will be less likely to occur, and the insulation damage between the electrodes will be less likely to occur. And ... the shape of the electrode on one side is rare; by forming a step difference between the first electrode surface and the second electrode surface 'and the electrode surface, the surface of the insulating material will not be jade-shaped, and the processing cost It will be cheaper. In addition, the shortest creepage distance between the electrodes of the insulating material will be approximately the same length as the distance between the electrodes of the supported electrode portion, so that the surface of the insulation between the electrodes has almost no unevenness, and the insulating material will be suppressed. Increase in released gas. As a result, the vacuum degree of the beam path of the device is not reduced. The metal used to plate the electrodes in the electrostatic optical system is preferably platinum or an alloy mainly composed of platinum.卩 When platinum or a platinum-based alloy is used to plate an electrode or part of an electrode, the discharge between the electrodes and the insulation between the electrodes will reduce the damage. In addition, even if the sample is a semiconductor wafer, when the surface of the semiconductor wafer has platinum plated on the electrodes, the performance of the device does not deteriorate, so it is more suitable for the inspection of semiconductor wafers. In addition, a fourth embodiment of the present invention is a device manufacturing method using the above-mentioned evaluation device, which is characterized in that: during the device manufacturing process, the evaluation device is used for semiconductor wafers still in the sample state. The images are evaluated. ---- (Please read the precautions on the back before filling this page) • Line-quasi (CNS) A_4_ Specification ⑵〇 312766 5. Direction of invention (η) is reversed. This electronic wire device is a piece of optics on the sample and separated by ExB _ irradiation of human electrons (please read the precautions on the back before filling this page). The secondary electrons will be released by the knife. The green-secondary optical system is separated, and then introduced into the secondary optics, and is characterized by: the separation of the magnetic field of the eight-vector-Am electron wire by the separation of £ χ Β *, and twice the bias vector of the electric field , And the deflection direction is reverse. In this case, 'the primary electron line formed by the complex light is preferably formed by the aforementioned primary optical system' and irradiated on the sample surface, and the two-person electron beam detector detects the line formed by the aforementioned plural beams. The secondary electron beam emitted from the sample by irradiation. The above electronic wire devices can all be used in defect inspection devices, line width, alignment 'alignment accuracy devices, and fixed devices with high time resolution. Field test In addition, a fifth embodiment of the present invention provides a method for manufacturing a semiconductor device, which is characterized by a semiconductor device that can be inspected by using the electronic wire device. The 6th implementation form printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs of the People's Republic of China is an electronic wire device, which is equipped with: The excitation voltages on the three ridges (extiuti〇nvοltage) are used to represent the second time when the image-edge parallel to the first direction is traced in the second direction :: The rising first line of the line signal waveform 1 data; and along the aforementioned first direction: a pattern_edge candidate that is parallel to the second direction of the description, used to indicate the second data: the second data of the rise of the signal waveform; Describe the excitation conditions for the objective lens (exitati〇n), as shown in the figure. $ 氏 状 度 剌 巾 ^? 7 ^ 7 ^ 177297 ¥ 3--1 Month 312766 11 (revised page) B7 539845 5 2. Description of the invention (l2) The excitation element of the objective lens is similar to the second data in the nth order, and represents the maximum of the second order and the matching device, respectively. Find the algebraic average of the two pieces to fit. The above-mentioned excitement bar can also correspond to the above-mentioned sample with a plurality of the above-mentioned objective lenses corresponding to the above-mentioned electrons, "" the foregoing plural-times ... by being bundled in a place different from the above-mentioned sample. " There is also a device, under the aforementioned pattern, the "hunting by the rain and excite the device" is equal to the aforementioned algebraic mean: after the objective lens is excited, the astigmatism is corrected first, and the pattern is described. Introducing the sixth embodiment of the present invention, 'providing a kind of electronic wire device, == package 3 electron optics of the objective lens 1 electron wire clustering, and other electron beam scanning diagrams | In the evaluation of this figure, the objective lens is provided with a first electrode to which a voltage closer to the ground is applied, and a second electrode to which a voltage farther from the ground is applied, and is applied to the D electrode by a change. The electric power can change the focal length of the objective lens, and the excitation device is provided with a device for changing the electric grinder applied to the second electrode in order to change the focal length of the objective lens. And to keep the aforementioned focal length short A device that changes within time and changes the voltage applied to the first electrode. A sixth embodiment of the present invention also provides a method for manufacturing a semiconductor device, which is characterized in that the above-mentioned electronic wire device is used for semiconductors in the manufacturing process. 312766 Intention Φ 12 539845 A7 ____B7 V. Description of the invention (I3 wafer for evaluation. The seventh embodiment of the present invention provides a way to irradiate the substance with a sub-line, and perform power-up of the substance: line: set, with Each of electricity and inspection ... at least-a type of item, characterized by the system; preparation: measuring the mechanical junction to determine the position of the electron of the corresponding substance. M parts; Xiao You, an electric dust element that bears force from the vibration of the structure, is electrically connected to the voltage element, and the circuit is used to weaken the vibration attenuation of the electrical energy output by the voltage element. When irradiating a substance with an electron beam to perform processing, manufacturing, observation, and inspection of the substance, at least one of the following items: h ^. ±, and middle, apply the natural vibration to the mechanical structure including the natural vibration. When an external force vibration component of the resonance frequency of the mechanical structure of the transmission according to the number of experience laid off resonance magnification, the vibration is amplified vibration component. This vibration forces will be imposed on the piezoelectric element.

The consumer property cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints motor-electric components. Although the vibration energy of the mechanical structure is converted into electrical energy and output, the vibration attenuation circuit weakens this electrical energy. The external force on the piezoelectric element will generate force. This can cancel the vibration caused by mechanical resonance and reduce the resonance magnification. The above-mentioned mechanical structure is a part or all of the vibration problems generated in the electronic wire application device, and is an arbitrary mechanical structure that can determine the position of the electronic wire. For example, an optical part of an optical system used to image an electron beam as a substance, a lens barrel for storing the optical system, a support table for a material trade, or an electron beam can be irradiated on the substance. The generated secondary electron beams are used to image the optical parts of the optical system on the detector, and the paper size is _ towel_ 家 g ^ (CNS) A4 (⑵297297 mm) Printed by the consumer cooperative. V. Description of the invention (U) The lens barrel of the optical system is used for storing the lens barrel of the detector and the like. _ The circuit for attenuating vibration must include at least an inductive element or an inductive device which is an equivalent circuit of the element. The inductive device is connected to a piezoelectric element having an electrostatic capacity to form a resonant circuit. In order that the resonance frequency of the resonance circuit can actually reach the resonance frequency of the mechanical structure, the inductance of the inductive device corresponding to the electrostatic capacity of the piezoelectric element is determined. In addition, it is preferable that the vibration damping circuit be provided with a resistance element. In this case, 'at the resonance frequency, the capacitive impedance of the piezoelectric element and the impedance of the inductive device cancel each other out, so that the impedance of the resonance circuit is essentially: a resistance element. Because at the time of resonance, the electrical energy output by the piezoelectric element is consumed as heat energy due to the resistance element. A seventh embodiment of the present invention provides a semiconductor manufacturing method including at least one of the above-mentioned electronic wire device that can perform processing and manufacturing of a semiconductor device, or observe and inspect a semiconductor device that is being processed or completed. 1 procedure. According to the eighth embodiment of the present invention, the electrostatic chuck 'that electrostatically attracts and holds the wafer' is increased or decreased during the time until the applied voltage of the wafer reaches a predetermined voltage from 0 volts. The electrostatic chuck is When a substrate, an electrode plate, and an insulating layer are superimposed, and a voltage interlocking with the applied voltage of the wafer is applied to the electrode plate of the electrostatic chuck, an attractive force is generated between the wafer and the chuck. The electrode plate is divided into ... the first electrode formed by the central part and the peripheral part of the electrode plate; and the rest of the electrode plate (please read the precautions on the back before filling this page) • ^ | ^ Clothes ---- Order --------- Dream ·

Private paper size applies to China National Standard (CNS) A4 (210 x 297 mm) uz / hfS A7 A7

5. Description of the invention (I5) The second electrode formed in other peripheral parts. Initially, a voltage is applied to the second electrode after applying electricity to one electrode ', and then the wafer is brought to a ground or low potential state. According to the eighth embodiment of the present invention, regarding the combination of a wafer and an electrostatic chuck that electrostatically absorbs and supports the wafer, the electrostatic chuck is referred to as an L-substrate, and the electrode plate and the insulating layer are stacked to form a wafer. Electro-grinding will be applied by a predetermined resistance and contactor. The contactor system—a needle-like shape or a blade tip with which the front end can contact the back of the wafer can contact the edge of the wafer. An eighth embodiment of the present invention provides a device manufacturing method that uses an electrostatic chuck or a combination thereof to suck and support a wafer. According to a ninth embodiment of the present invention, an electronic wire device is provided, which is a device for placing a sample on an XY table in a vacuum state to move the sample to an arbitrary position so that the electron beam is irradiated onto the sample surface. It is characterized in that the XY table is provided with a non-contact support mechanism composed of a static pressure bearing and a vacuum sealing mechanism composed of a differential exhaust gas. The position where the electron beam irradiates the sample surface and the A partition plate for reducing the conductance is provided between the support portions of the static pressure bearing of the χγ table, and a pressure difference can be generated between the electron beam irradiation area and the support portion of the static pressure bearing. According to the ninth embodiment of the present invention, the support mechanism of the χγ table for placing the sample is a non-contact support mechanism composed of a hydrostatic bearing. In order to prevent the high-pressure gas used in the hydrostatic bearing from leaking to a vacuum, Indoors, 'a vacuum seal mechanism consisting of an active exhaust gas is installed around a static pressure bearing'. This table device can exert high precision in a vacuum state. A7 B7 V. Explanation of the invention (b) The setting determines the function, and the distance between the electron beam irradiation position / and the electrical conductivity becomes smaller, even if the sliding part of the table is shifted to the ambient time " and appendix The gas on the surface of the sliding part will be released. This release: The gas will not easily escape to the position where the electron beam is irradiated, and the pressure at the position where the electron beam is projected will not easily rise. In other words, with the above structure, the vacuum degree of the electron beam irradiation position on the sample surface can be stabilized, and the worktable can be driven by the precision of: 'Therefore, the sample surface can be prevented from being contaminated by: Degree of electronic wire sample processing. The differential exhaust structure can be built into the aforementioned partition plate. At this time, a partition plate is installed between the branch of the static house bearing and the electron beam irradiation area, and a vacuum exhaust passage is arranged inside the partition plate to make it have a differential exhaust function. It is almost impossible for the gas released from the support portion of the static pressure bearing to pass through the partition plate and then pass through the electron beam to irradiate the area side. For example, the vacuum degree of the irradiation position of the electron beam can be maintained at a more stable state, and the aforementioned partition plate can be provided with a cold trap function. At this time, generally, in a pressure region of 10-7 Pa or more, the main component of the residual gas in the vacuum and the gas discharged from the surface of the material is water molecules. Therefore, if the water molecules can be efficiently discharged ', it can be easily and stably maintained in a high vacuum state. Here, if it can be cooled to _1〇001__2〇〇. (: The cold trap is set in the above-mentioned partition plate part, and the cold trap can be used to freeze and collect the released gas generated on the side of the static pressure bearing, and it is difficult for the released gas to pass through the side of the electron field. Therefore, It can easily and stably maintain the true second degree in the field of electron beam irradiation. This kind of cold trap is not only effective for water molecules, but also for obstructing the air. &Quot;: Paper Ruler Heart_ 家 辟 页 订 消 312312 539845 A7 B7 V. Invention Explanation (η) The reason for cleanness' The removal of organic gas molecules such as oils is also quite effective.% Order% > The gas supplied to the static pressure bearing of the XY table is preferably a dry or pure inert gas. 〇 In addition, the aforementioned XY table, at least economically, is best to apply a surface treatment on the surface of the part facing the hydrostatic bearing to reduce the release of the air body. As mentioned above, J is exposed to the south pressure in the hydrostatic bearing part. The sliding surface of the workbench in the property gas environment will attract the gas molecules of the gas bureau staff containing high-pressure gas. When the moving part is exposed to a vacuum environment, the consumption of gas molecules absorbed will be released from the surface to release the gas, which will deteriorate the degree of vacuum. Therefore, in order to prevent the deterioration of the degree of vacuum, the cooperative will reduce the amount of gas molecules adsorbed and gas absorbed. The rapid emission of printed molecules is even more necessary. This paper size_CNS A4 size (210 X 297 mm) " 312766 In addition, 'the aforementioned partition plate can also be set near the position where the electrons are irradiated. And two places near the static pressure bearing. At this time, since the separator is provided to reduce the conductance in two places, such as near the irradiation position of the electron beam and near the static pressure bearing, the vacuum chamber is divided by a small conductance. There are 3 rooms including the electron beam irradiation chamber, the static pressure bearing chamber and its intermediate chamber. The pressure of each chamber is formed in the lower order to form the electron beam irradiation chamber, the intermediate chamber, and the static pressure bearing chamber to form a vacuum exhaust system. In this way, even if the pressure rise caused by the released gas occurs in the static pressure bearing chamber, since the chamber has been previously The pressure is set at a higher level, so the pressure fluctuation rate can be suppressed to a lower level. Therefore, the effect of the partition plate can be used to control the pressure fluctuation of the intermediate chamber to a lower level, and then by another A partition plate controls the pressure fluctuation of the electron beam irradiation chamber to a lower level, i can reduce the pressure fluctuation to a level that will not cause substantial problems

OM-J OM-J Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Invention Description (I9 In addition, the present invention is an embodiment of the ninth brother of the company, an electronic wire device, to manufacture a half-hearted for the use This method is due to the manufacturing method of the Kelita mesh conductor. The performance of the 向 g green πbismuth 卩 anvil ^ mountain reverse 扪 σ is determined by the precision of the square and the device, and the vacuum degree of the electron beam makeup & domain # Like, recognize +, and another device 'to manufacture semiconductors, so that fine semiconductor circuits can be formed. According to the tenth embodiment of the present invention, an electronic ankle device is provided, which belongs to a pair of devices mounted on an XY stage. The device for irradiating electron beams is characterized in that the χ γ table is stored in the body 'and is supported in a non-contact manner by a static pressure bearing in a housing, and the housing housing the table is evacuated by vacuum, A differential exhaust mechanism for exhausting the irradiation area of the electron beam on the sample surface is provided around the portion where the electron beam is irradiated on the sample surface of the electron beam device. With high pressure gas, you can first connect The exhaust pipe is used to evacuate the vacuum chamber. At the same time, by providing a differential exhaust mechanism that exhausts the electron beam irradiation area around the portion irradiating the electron beam, the electron beam irradiation can be greatly reduced by the pressure in the vacuum chamber. The pressure in the region achieves the purpose of stable vacuum, and the vacuum can be used to process the sample without any problems. That is, the same static pressure bearing table used in ordinary atmosphere can be used. The constructed table (static pressure bearing support table without differential exhaust mechanism) performs stable electronic wire processing on the sample on the table. The gas supplied to the static pressure bearing of the aforementioned XY table is dry nitrogen or high purity inert. The gas is ideal. The dry nitrogen or high-purity inert gas ^ ^ --------- line (please read the back of the first; i matter before filling this page) This paper size applies to Zhongguanjia specifications_ (1_ι〇χ 297 public meals 19 J12 / 66 '539845 B7 V. Description of the invention (21) ::: Can be generated, converged-secondary electrons are detected by the detector by the aforementioned sample / scan scan irradiation, Optical system of secondary electrons, useful Hysteresis voltage applying device for the voltage released from the irradiation part of the strands. The hysteresis voltage is used to apply the hysteresis voltage to other samples. The hysteresis voltage is applied to the above-mentioned samples and the most ideal is the structure. The feature of t is: the aforementioned optical lens is processed as an integral insulator: a symmetrical lens, and the axis is symmetrical || In addition, the surface of the uth embodiment of the present invention is formed with a metal coating. Provide an electronic wire The device has a number of devices that can be generated, converging a ^ tang, a # electronic wire device, equipped with an optical system, will scan from the aforementioned sub-line, and irradiate the line to accelerate, and use E x B to separate people to detect The device is detected, and is characterized by: after the optical system is separated once, the extension voltage # fgf € /, yes. The charging investigation function for applying hysteresis, electricity &; Based on the information about the charging status of the self-test material, determine the most ,! !! The charging state of the charging investigation function is described as follows: a delay voltage of μ, ^ is applied to the above-mentioned display function, or the function of changing to an optimal electronic wire current is applied. The eleventh embodiment of the present invention also provides an electronic wire device including an electron beam irradiated onto the sample 2 pre-school department; and a charging survey function 'characterized in that the aforementioned charging survey machine is structurally inspected. When a secondary electron beam generated by irradiating a primary electron beam on the sample is formed, and an image is formed, the image deviation or image blur of a specific part of the sample is evaluated, and the result is an image shift or a graph i When the image blur is large, it is evaluated that the charging is large. Ruler of wealth standard (CNS) A4 specification ⑵G x 297 public love _ 2] (correction page) 312766 539845 A7 V. Description of the invention (22) The aforementioned charging survey function can still have a display, A hysteresis voltage with a changeable value can be applied to the sample, and an image can be brought into the vicinity of the state where the density of the sample has a large change in the state of at least // υ ζ hysteresis voltages. The above-mentioned images are evaluated by image shift or image interpolation. In addition, an eleventh embodiment of the present invention provides a device manufacturing method, characterized in that a wafer defect in the middle of a manufacturing process is detected using the above-mentioned electronic device. — The twelfth embodiment of the present invention provides a defect inspection device for inspecting the defects of a sample, which is provided with an image acquisition device that can respectively obtain the parts that are partially overlapped on the sample and are mutually displaced on the side. Images of the plurality of inspected areas; back to a memory device for storing a reference image; a defect determination device for comparing images of the plurality of inspected areas obtained by the image acquisition device; and stored in the memory device In the reference image 'to determine sample defects. Here, as the sample to be inspected, any sample capable of detecting a defect can be selected, but the present invention can obtain excellent results when a semiconductor wafer is used as an object. In this embodiment, the image acquisition device can acquire images of a plurality of inspected areas that are partially overlapped and mutually displaced on the sample, and the defect determination device can obtain the images by comparison. A plurality of images of the area to be inspected; and a reference image stored in advance to operate to determine a sample defect. Standard (CNS) A4— (21Q χ 297) (Please read the precautions on the back before filling this page)

-ϋ 1 · n · ϋ nn · ϋ Jf ^ 0 0MMt 1_1 l_i n an I = D Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs: > Watch 45 ___B7 V. Description of the invention (23 because of the twelfth embodiment of the present invention , Can obtain the image of the inspected area with different plural positions, so you can selectively use the inspected image with less position deviation in the standard image in the later program, and control the defect caused by the position deviation. |: The detection accuracy is lowered. In addition, the sample and image acquisition device Y are generally, even if a part of the inspection image is located at or below the inspected image area, the inspected area is plural due to the positions shifted from each other. The probability of including any full inspection image in any area of the image file and the cutting edge is very high, so it can: stop the error detection error caused by the partial depression of the image. The aforementioned comparison device, for example, A so-called matching calculation is performed between the obtained images of the plurality of inspected areas and the reference image, and it is found that among the plurality of inspected areas, at least one of the images and the reference image have no substantial relationship. When the difference, you can judge Defect-free sample. Conversely, when there is the substantial difference between the reference image and the image of the examination region, it is determined that the sample by defect to the defect inspection with high accuracy.

In the twelfth embodiment of the present invention, an electron irradiation device is separately provided to irradiate a plurality of primary electron beams to each of the inspected areas, and the secondary electron beams are released from the sample. The secondary electron beams released from the plurality of inspected areas can sequentially acquire images of the plurality of inspected areas. In addition, the above-mentioned electron irradiation device further includes a particle beam source for emitting primary electrons; and a biasing device for biasing the primary electrons, and using the biasing device to bias the primary electron beams released from the particle beam source, It is preferable that one electron beam is sequentially irradiated to a plurality of inspected areas. In this case, since the position of the input image can be easily changed by the deflection device, please read it first.

This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm 539845 A7) 5. Description of the invention (24) Therefore, it is possible to quickly obtain a plurality of inspected images with different positions. The twelfth embodiment of the present invention, A method for manufacturing a semiconductor device is also provided, which includes a procedure for inspecting a wafer defect in a process or a finished product by using the defect inspection apparatus of each of the foregoing forms. [Simplified Description of Drawings] FIG. 1 is a diagram related to the present invention. The schematic diagram of the structure of the inspection device of the i-th embodiment of the charged particle beam device. (A) is a plan view of the electron deflection system, and (b) is a cross-sectional view. FIG. 3 is a view of manufacturing a semiconductor device according to the present invention. A flowchart of one embodiment of the method. The flowchart in FIG. 4 is a flowchart of a lithography step forming the core of the wafer processing program in FIG. 3, and (b) is a wafer inspection in the wafer processing program in FIG. The flowchart of the steps. Fig. 5 is a front view of the main constituent elements of an inspection device in the form of a charged particle beam attacking apricot morphology related to the present invention, and is a view viewed along the line AA of the figure. Figure (A) The main view of the inspection device shown in FIG. 5 is a plan view taken along line B_B in FIG. 5, and the / element is a modification of the configuration of (a) in FIG. 6 (7) Figure 7 is a view of the line CC of the small environmental device shown in Figure 5. Figure σ is a view of the loading housing along Figure 8, which is shown in Figure 5. The view seen from line DD. It is an enlarged view of the wafer rack along FIG. 6 and FIG. 9. ㈧ is a side view.

This paper size applies to China National Standard (CNS) A4 specifications (2J〇x ^ r ^ iT " 24 ^ 312766- event page order A7 A7

V. Description of the invention (M) Sectional view taken on line Ε-Ε with [A] [A] and [B] in FIG. 10 are main figures. μ _ Variation of Selection Method Figure 11 is a schematic diagram of the inspection structure of Figure 5. Outline of Electro-optical Device Fig. 12 is a diagram of a potential application mechanism. Fig. 13 'is a diagram for explaining the ^ 14 ρ ,. sub-line calibration mechanism. FIG. 14 is a schematic explanatory diagram of a wafer alignment system & Fig. 15 is a schematic cross-sectional view showing the configuration of a third embodiment of the f-electron beam device according to the present invention. Fig. 16 'is a schematic diagram showing the structure of an evaluation device according to a fourth embodiment of the charged particle beam device according to the present invention. Fig. 17 is a graph showing the probability of occurrence of dielectric breakdown of other metals. Fig. 18 is a perspective view and a sectional view of the electrode. Fig. 19 'is a partial sectional view of the electrode shown in Fig. 18. Fig. 20 is a top view and a cross-sectional view shown in Fig. 18. Fig. 21 'is an enlarged sectional view of an important part of the electrode shown in Fig. 20. Fig. 22 is a diagram schematically showing a fifth embodiment of a charged particle beam device according to the present invention. Fig. 23 is a detailed view of the configuration of the electronic wire device shown in Fig. 22. Fig. 24 is a diagram schematically showing a sixth embodiment of a charged particle beam device according to the present invention. ------------- install -------- order --------- line (please read the notes on the back before filling this page) Printed by the Bureau ’s Consumer Cooperatives 1 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 ^ 297 ^^) " 25- 312766 539845 V. Description of the invention (26) Figure 25 is applied to the objective lens A graph of the relationship between the rise in negative electricity, A-letter wave table. () Is a diagram illustrating a rise of an electric signal. Fig. 26 'is a configuration diagram of an electron beam inspection apparatus according to an embodiment of a charged particle beam apparatus according to the present invention. FIG. 27 is a schematic diagram of a mechanical surname structure block of the electric sister μ line inspection device shown in FIG. 26, where ⑷ represents an electronic line inspection device and a stand: (b) represents a natural vibration of a lens barrel, (1 ^, when the actuator is installed. Fig. 28 'is an actuator used in the electronic wire inspection device shown in Fig. 26, a vibration reduction circuit, and an in-line resonance circuit circuit Fig. 29 is a graph showing the number of mirror transmissions of the electronic wire inspection device shown in Fig. 26. Fig. 30 is a diagram of the lens barrel transmission in the electronic wire inspection device shown in Fig. 26. A graph of the number of turns, the electrical frequency characteristics of the in-line resonance circuit, and the number of comprehensive transfer turns. Figure 31 is an explanatory diagram of a wafer inspection method related to the present invention, showing image defect detection, and (b) showing line width measurement. (0 indicates potential comparison measurement FIG. 32, which is a schematic plan view of the electrostatic chuck in the eighth embodiment of the electronic wire device according to the present invention, and is a plan view of the electric crutch after the wafer is removed. FIG. 33 is Schematic vertical section along line M_M in Figure 32 ~ JT27F6 ^ κ of the paper off the applicable specifications ⑵〇 χ well meal grip 845

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Λ7

5. Description of the Invention (27) The figure is a cross-sectional view showing a wafer mounted without applying a lightning voltage. Figure 34 (a) and (b) are the time table of the electric dust applied to the electric pole and the Japanese yen. Fig. 35 ® is a block diagram of a configuration example of an electronic wire device using # 电 爽 盘 shown in Fig. 32. Fig. 36 is a diagram showing a vacuum chamber and a χγ stage of a conventional electron beam device, where [Α] is a front view and [β] is a side view. Fig. 37 is an explanatory diagram of a differential exhaust mechanism of Fig. 36; FIG. 38 is a diagram of a vacuum chamber and a χγ stage in a ninth embodiment of a charged particle beam device according to the present invention, where [A] is a front view and [β] is a side view. Fig. 39 is a diagram corresponding to a vacuum chamber and a XY table in a first modification of the ninth embodiment of the present invention. Fig. 40 is a diagram showing a vacuum chamber and a XY table according to a second modification of the ninth embodiment of the present invention. Fig. 41 is a diagram corresponding to a vacuum chamber and a χγ stage in a third modified example of the ninth embodiment of the present invention. Fig. 42 is a diagram showing a vacuum chamber and an X-axis stage corresponding to a fourth modified example of the ninth embodiment of the present invention. Fig. 43 is a schematic diagram of an example of an optical system and a detection system provided in the lens barrel shown in Figs. 38 to 42; FIG. 44 is a diagram showing a vacuum chamber and a χγ stage in the i 0th embodiment of the charged particle beam device according to the present invention. Figure 45 is a differential exhaust machine installed in the device shown in Figure 44-(Please read the precautions on the back before filling out this page) Order: • Thread-This paper size is applicable to China Standard (CNS) A4 specification (210 x 297 mm) 27 312766 539845 The size of this paper is applicable to the Chinese National Standard (CNS) A4 specification (2) 〇χ 297 public dollars)-A7 V. Description of the invention (an example of 28 structures) Fig. 46 is a diagram of a gas circulation piping system provided in the device shown in Fig. 44. Fig. 47 is an optical system in a u-th embodiment of a charged particle beam device according to the present invention. Schematic diagram. Fig. 48 is a description of the arrangement of the lens barrels of the electronic wire device shown in Fig. 47. Figs. 49 (A) and (B) are descriptions of the evaluation place and evaluation method for charging t ° ^ 50 FIG. 51 is a schematic configuration diagram of a defect inspection apparatus according to a first embodiment of a charged particle beam apparatus according to the present invention. FIG. 51 is a plurality of inspected images and a reference image obtained by the defect inspection apparatus of FIG. 50. Fig. 52 is a wafer in the defect inspection apparatus of Fig. 50 Flow chart of the main program for checking. Figure 53 is a flowchart showing the detailed flow of the subroutine of the plurality of checked image data obtaining program (step 1904) in Figure 52. Figure 54 is the flowchart in Figure 52 A detailed flowchart of the subroutine of the comparative process (step 1908). Fig. 55 is a diagram showing a specific example of the structure of a detector of the defect inspection device of Fig. 50. Fig. 56 is a surface of a semiconductor wafer. A conceptual diagram of a plurality of inspected areas partially overlapping and shifted from each other is shown on the top. [The best form of implementing the invention] r /. 18 "". "'3" 2766 --- ί ------ ----------- ^ ---- (Please read the precautions on the back before filling out this page) 539845 V. Description of the invention (29) The following uses a device that uses an electronic wire as an example to explain this. Various embodiments of the f-pen particle ray device according to the invention. No matter which embodiment is suitable for use in a sheet-shaped beam inspection device. The implementation of the green lens (the first embodiment of the shape bear, the charging related to the present invention) The first embodiment of the particle beam device is related to an imaging projection method using an electron beam. First, the camera projection method is explained. The camera projection method is to irradiate the sample observation area with an electron beam at a time, that is, 'irradiate without scanning-a fixed area, and use the lens system to summarize the secondary electron rays from the illuminated area. , And the detector (combination of microcircuit board and fluorescent plate) is imaged as a secondary electron beam image. This image is detected by a one-human π CCD (solid-state imaging device) or TDI_CCD (linear image sensing) It is converted into an electrical signal and outputted to a CRT and stored in a memory device. The image information is used to detect a sample X (programmed semiconductor (Si) wafer) defect X trap. In the case of a CCD, the movement direction of the satellite platform is the short-axis direction or the long-axis direction 'and the movement mode is a step-and-repeat mode. In the case of Tm_CCD, the worktable moves continuously in the direction of accumulation. Since images can be continuously acquired in tdi_ccd, tdi_ccd is used for continuous defect inspection. The decomposition energy is determined by the imaging optical system (: magnification and accuracy of the sub-optical magic). For example, a resolution energy of 0.05 can be obtained. At this time, the decomposition energy is q _, and the irradiation condition of the electron beam is 200 μm χ 50 μm. The inspection time of a 20cm wafer is about one hour and 8 times faster than the _ method. The shape of the muscle coffee used here is the measurement image ⑽us called χ512 segment, the line rate is 3, seconds (line frequency He). In this case, the paper size applies the home standard (cns) a4 rule ^ 1 ^ 7297 mm 539845 A?

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 539845 A7 _____ B7_— _______ V. Description of the invention (M) 妁 The beam is cut off from the third lens 2013 and the fourth lens 2014 in the rear section to prevent the detector 201 5 from being charged or Pollution. The magnification is set by changing the lens conditions (focus distance) of the third lens 2013 and the fourth lens 2014. The secondary electron beam expands the projection by the secondary optical system and forms an image on the detection surface of the detector 2015. Detector 2015 is a microcircuit board (MCP) that amplifies electrons; a fluorescent panel that converts electrons into light; lenses and other optical elements that relay relays and optical directions of the vacuum system and the outside; and imaging elements (CCDs) Etc.). The secondary electron is now imaged on the detection surface of the MCP, and is amplified and converted into an optical signal by a fluorescent plate, and converted into an optical signal by an imaging element to form an electrical signal. The control device 2016 reads the image signal of the sample from the detector 2015 and transmits it to the CPU 2017. The CPU 2017 performs pattern defect inspection from the image signal by template matching. The table 2006 can be moved in the χγ direction by the table driving device 2020. The CPU 2017 reads out the position of the table 2006 and outputs a drive control signal to the table driving device 2020 to drive the table 2006 to sequentially perform image detection and inspection. As described above, since the inspection device in the first embodiment has a telecentric electron optics system composed of the numerical aperture 2009 and the cathode lens 2008, the primary electron beam can be evenly irradiated on the sample. In addition, for the secondary electron beam, since all the main light rays from sample 2 007 are incident perpendicularly (parallel to the optical axis of the lens) into the cathode lens 2008, and pass through the numerical aperture 209, the peripheral light will not be blocked. In addition, the brightness of the image at the periphery of the sample is not reduced. In the meantime, although the imaging position will be applied to the Zhongguanjia Standard (CNS) A4 specification due to the bulk paper size with electronic energy ⑵Qx 297 ^ 丁 34 312766 ---------------- --- Order --------- Hua (Please read the notes on the back before filling in this page) 539845 m

Printed A7 by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (35) Unevenness and change, that is, chromatic aberration of magnification (especially because the uneven distribution of energy of the secondary electron wire is more serious, so the magnification Chromatic aberration is large), but by arranging the numerical aperture 209 at the focal position of the cathode lens 2008, the magnification chromatic aberration can be suppressed. The change of the enlarged L ratio is performed after the numerical aperture is passed. Therefore, even if the lens conditions of the third lens 2013 and the fourth lens 2014 are changed, the entire field of view on the detection side is still available. Obtain an equal image on. In addition, in this embodiment, a uniform image without unevenness can be obtained. However, as long as the magnification ratio is increased, the problem of reduced image brightness will occur. $ To improve this problem, when changing the lens conditions of the secondary optical system and changing the magnification ratio, it is best to set ―line lens conditions first, so that the effective field of view on the sample surface determined by the above changes and the sample surface will be irradiated. The electrons on the wire form the same size. In other words, when the magnification is increased, the field of view will be narrowed, but at the same time, by increasing the density of the irradiation energy of the electron beams, the signal density of the detected electrons can be maintained at even if the projection is expanded by the secondary optical system. A certain level, and the brightness of the image will not decrease. In addition, in the inspection apparatus of the first embodiment, the Wiener filter 2010 is used to bend the primary electron wire and let the secondary electron wire go straight, but it is not limited to such a filter. Wiener filter with electrons traveling straight and curving the orbit of the secondary electron line. In addition, in this embodiment, a rectangular beam is formed by a rectangular cathode and a quadrupole lens, but it is not limited to this form. For example, a rectangular beam or an oval beam may be formed by a circular beam, and a circular beam may be passed through a gap. To form a rectangular beam. In addition,

Λ7 V. Description of the invention (36: It is also possible to scan a plurality of beams to make a body. The average amount of irradiation to the irradiation area can be set to any of the money beams (but according to the actual :: electronic state of the state) In the description, the material that can be used in the "projector" is ―line source. The electron release Γ:!:-The material with a power function is: the fruit set cone II; Γ :: is conical or cut the cone front end A circle formed by backwards ;: Use: The diameter of the front end of the frustum is about one. In other ways, an electric field source or a thermoelectric field source can be used. As in this embodiment, a larger electricity: (Example— It is appropriate to use source tapping. (SEM t · +, (Generally, thermal electric field electron beam sources are generally used.) Thermoelectric beam source 'is a method of releasing electrons by heating the electron release material'. The so-called thermal electric field release electron beam source refers to a method in which electrons are released by applying a high electric field to an electron release material, and the part is heated to stabilize the release of electrons. Refer to Figure 1 for wire release According to the understanding of the description, the main components of the camera projection method are as follows First of all, "the primary electron optics system will be explained, and the electron beams emitted by the electrons will be formed into a beam shape". The part of the rectangular or circular (elliptical) electron beams irradiated on the wafer surface is called "primary electron optics system." ”. By controlling the lens conditions of the primary electron optics system, the size and current density of the sub-beam can be controlled. In addition, it is printed by A7 B7, a consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, located in primary / secondary electron optics 312766 539845. 2. Description of the invention (37) The Wiener filter of the connecting part can make a primary electron beam perpendicularly enter the wafer. The thermal electrons released from the cathode of the LaB6 of this kind of electron gun use a Wiener electrode and a triple anode lens at The imaging of the electron gun diaphragm is an overlapping image. Using the illumination field diaphragm, the electron wire that appropriately adjusts the incident angle of the lens can be controlled by the primary electrostatic lens to form a rotationally asymmetric image on the numerical aperture, and then And then irradiate the wafer surface. The rear stage of the primary electrostatic lens is composed of 3 stages of 4 poles (QL); and} stage aperture aberration correction electrodes Structure. Although the 4-pole lens has strict calibration accuracy restrictions, it has the characteristics of a strong beam converging effect compared to a rotationally symmetric lens, and can be corrected by applying an appropriate voltage to the aperture aberration correction electrode. Aperture aberration of spherical aberration of a symmetric lens. This makes it possible to irradiate a uniform surface light beam to a predetermined area. Secondly, it is a secondary electron optics system, which uses an electrostatic lens (CL, TL) equivalent to an objective lens. , Image the secondary element secondary electron image obtained by processing the secondary electron line generated from the wafer through the irradiation of the primary electron line, and image it at the position of the field diaphragm, and use the lens (pL) at the rear to enlarge the projection, The imaging projection optics is called the "secondary electron optics." At this time, the wafer is applied with a negative bias (deceleration electric field voltage). The decelerating electric field has a decelerating effect on the irradiation beam.In addition to reducing the damage to the wafer (sample), it can also accelerate the secondary electron rays generated from the sample surface by the potential difference between CL and wafer, which has the effect of reducing chromatic aberration. . The electrons collected by CL are imaged on the FA by TL, and the image is enlarged and projected on the secondary electron beam detector (MCP) using pl. The NA is arranged between CL-TL. By correcting the NA correctly, it can form a light that can reduce off-axis aberration. The paper size is applicable to the National Standard for China (CNS) A4 (210 public). 37 Pack ----- --- Order --------- line (please read the notes on the back before filling this page) A7 Member of Intellectual Property Bureau of the Ministry of Economic Affairs, Fees Co., Ltd. ti V. Description of the invention (2030a, 2030b is the best On the summer circle, .34 is symmetrical, but it can also be located in the concentric Figure 2 (b) passing through the point 2034 in (a) of Figure 2 and perpendicular to the electronic soul "203b The vertical cross-sectional view of the surface is used to explain the movement of the electron beams. The irradiated electron beams 2G35a, ⑽b, the percent of Emperor's beast produced by the electrodes 2〇] 〇a, 2030b, and the electromagnetic coil 203 The magnetic fields generated by 1 a, 203 1b are deflected and incident on the surface of the sample toward the vertical direction. Here, the incident position angles of the electron beams 2G35a and 2035b measured on the Wiener ferrule # 于 定 疋The energy of the electron is not determined. In addition, in order to make the secondary electrons t 203 6a '20〇6b straight forward, the conditions of the electric and magnetic fields become vB = E, but The individual control sections 203ia, 203b, 203a, and 203b control the electric field generated by the package pole 2030 玨, 203 01), and the magnetic field generated by the electromagnetic coils 2 () 313, 2〇31b. Therefore, the secondary electron beam can enter the Wiener filter 2010 and be incident on the imaging projection optical unit. Here, v is the electron velocity (m / S) ′ B is the magnetic field (T), e is the electric capacity (c), and £ is the electric field (v / m). Finally, the detector will be described. In the secondary optical system imaging, the secondary electron line image from the wafer is converted into a light image by contacting the light curtain while being enlarged through a micro-circuit plate (MCP). MCP is a collection of millions of ultra-thin conductive glass capillaries with a straight length of 6 to 25 / zm and a length of 0.24 to 1.0 mm, and is shaped into a thin plate shape. By applying a certain amount of electric dust, each The capillary will function as a separate secondary electron amplifier, and the secondary electron amplifier will be formed as a whole. The image converted into light by the detector is projected on the TDI-CCD in a I-pair manner through a FOP system placed in the atmosphere through a vacuum transmission window. ---------------- (Please read the precautions on the back before filling out this page) Ordering ... -n H--II CNS) A4 size (210x 297 mm) 312766 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 539845 A7

V. Description of the invention (40) From the above description, it can be understood that the inspection apparatus of the first embodiment can improve the yield of good products of the inspection apparatus using electronic wires. Fig. 3 is an example of a method for manufacturing a semiconductor device using the first embodiment of the present invention, and includes the following steps. (1) A wafer manufacturing step for manufacturing a wafer (or a wafer preparing step for preparing a wafer) (2) A mask manufacturing step (or a mask preparing step for preparing a photomask) for manufacturing a photomask used for exposure (3) Wafer processing steps for processing required for wafers (4) Cut out the crystals formed on the wafers so that they can be actuated Wafer assembly steps (5) Check the completed wafers The wafer inspection steps described above are formed by several sub-steps. Among these main steps, the wafer processing step (3) has a decisive influence on the performance of the semiconductor device. In this step, the designed circuit patterns are sequentially stacked on the wafer to form a plurality of wafers that can be operated as a memory or an MPU. This wafer processing step includes the following steps. (A) A thin film forming step (using CVD, sputtering, etc.) for forming a thin film or wiring portion of an electroinductor as an insulating film or an electrode portion (B) An oxidation step for oxidizing the thin film layer wafer substrate (C) a lithography step using a resist to form a resist pattern for selectively processing a thin film layer or a wafer substrate, etc. (D) an etching step for processing the thin film layer or substrate according to the resist pattern (for example, Using dry etching technology) This paper size is applicable to China National Standard (CNS) A4 (210 x 297 mm) 3X2 / 66 ----------- installation -------- order-- ------- ^^^ 1 (Please read the first notice on the back before filling out this page) 539845 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention (41) (E) Ion 'impurity Injecting diffusion step (F) Resist stripping step (G) Inspection step for inspecting processed wafers In addition, the wafer processing boat is repeatedly performed in accordance with the required number of layers to fabricate a semiconductor stack that can operate as designed. Ordering (a) of Fig. 4 is a flowchart of a lithography step (C) forming the core of the Japanese yen processing step of Fig. ^. The lithography step includes the following steps. ⑷ In the step ，, a resist coating step (b) a resist exposure step covering a resist on a wafer on which a circuit pattern is formed ⑷ developing the exposed resist to develop a resist pattern development step (d ) Annealing step for stabilizing the resist pattern for development. When the defect inspection device of the present invention is used for the inspection process described above, even a semiconductor device with a fine pattern can be inspected with a good production rate. Inspection can improve the yield of products and prevent defective products from being shipped. This point will be described with reference to (b) of FIG. 4. Generally, the defect inspection device using electronic wires is expensive, and the production rate of good products is lower than that of other process devices. Therefore, this defect inspection device is currently used in the most important projects that require inspection (such as etching, film formation, live CMP (chemical Mechanical polishing), planarization, etc.). Therefore, the wafer to be inspected passes the atmospheric transfer system and the vacuum transfer system, and is aligned with the position on the ultra-precision χ-Υ stage, and then fixed by an electrostatic chuck mechanism, etc., and then according to (b) of FIG. 4 The defect inspection is performed in the order shown. In (1)) in Figure 4, first, the paper size is applied to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). Binding --------- line (please read M first) Note on the back, please fill out this page again) 539845 A7 Five inventions description (42 Optical microscope printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, according to the need to confirm the position of each grain, the height of each place is detected and stored. Optical The microscope can also be used to obtain optical microscope images where other defects are found. It is also used for comparison with electronic line images. Secondly, the corresponding wafer type (after which process, the wafer size is 20cm or 0cm, etc.) The parameter control information is input into the device. After the setting of the '疋' electronic optics system at the following inspection places, the inspection conditions are set, and the defect inspection is performed in real time while the image is obtained. High-speed information processing system with calculation function to check, and according to need, output the results of CRT and so on or store in memory. Defects include particles Defects, abnormal shapes (pattern defects), and electrical defects (such as broken wires and contact holes, etc.) can be automatically distinguished from these defects in real time, or the size of the defects, fatal defects can be classified. Detection of electrical defects can be achieved by detecting abnormalities in potential contrast. For example, in places with poor continuity, irradiation with electron rays (500ev level) is usually positively charged due to the decrease in contrast, so it can be distinguished from normal places. The electron beam irradiation device at this time refers to a low-potential (energy source) electron beam generating device (thermionic generation, UV) which is additionally provided to distinguish the contrast caused by the potential difference, in addition to the electron beam irradiation device for general inspection. / Photoelectron). Before the inspection target area is irradiated with the inspection electron beam, the low-potential (energy) electron beam is displayed before the irradiation. When the inspection electron beam is irradiated, the sample is projected to be positively charged. In the method, depending on the form, it is necessary to separately install a low-potential electron beam generating device. In addition, it is applicable to the paper size such as wafers. National Standard (CNS) A4 Specification (210 X 297 mm 312766 ^ --------- (Please read the precautions on the back before filling out this page) 539845 B? Printed by the Employees ’Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs System 5. Description of the Invention (43) Defects will be detected when the sample is applied to the reference potential positively or as the components pass through. (&Quot; " ·) The defect will be detected in such a way that the defect detection ratio is poor and can also be used in conjunction with the accuracy measurement Bu. + K — You can also use the wire frame method, and you can also use Xi Xi: In the inspection of the electrical defects of the sample. Φ The voltage of the part that was originally electrically insulated, „Different characteristics under the energized state. Also gp, compensating the electric load, so that the electricity of the part that was originally electrically insulated: from the first two of the voltage: Γ part ', but for some reason the part becomes energized. The voltage difference between “I and the electricity” and “thereafter” are used to irradiate the charged particle beam from the ▼ electron particle device related to the present invention, to obtain data with voltage difference, and analyze the obtained data to detect the energized state. . What is the implementation form r? f The application cone, the second implementation of this month, relates to an electronic wire device that is suitable for inspecting image defects formed on the surface of an inspection target using electronic wires, such as when inspecting wafer defects in semiconductor manufacturing processes. The situation is generally related to an electronic wire device suitable for an inspection device, and the inspection device is to irradiate an electron beam to an inspection object, capture a secondary electron beam that changes with its surface properties to form an image, and The image data is used to inspect the image formed on the surface of the inspection target at a high yield. In addition, the second embodiment of the present invention also relates to a device manufacturing method using such an electronic wire device and manufacturing the device at a high yield. Of the devices that use electronic wires to inspect defects such as wafers, the most widely used are scanning electron microscopes (SEMs) that are commercially available. This device uses a small interval of grating width to perform the light of the electron beam with a small aperture. Please read the δ first, and then fill in the terms.

% Binding page I Threading This paper size is in accordance with China National Standard (CNS) a4 (210 x 297 mm) 43 312766 539845 312766 A7 V. Description of the invention (44 raster scans) and the use of a secondary electronic wire detector , Detect the secondary electron rays released by the inspection object along with the scan and form a sem image, and then compare the same positions of different crystal grains in the SEM image to extract the defects. However, in the past, it has not been useful to do so. It is a device of the entire system using a defect inspection device using an electronic wire. Therefore, a defect inspection device using an SEM has a small beam size and a small pixel size and a small grating width. In addition, in order to achieve a high-quality manufacturing rate, increasing the beam pen / "L" will cause a problem that a good SEM image cannot be obtained due to the charging of a wafer with an insulator on the surface. In addition, 'about the irradiation of electron beams for inspection Electro-optical device; JE inspects the correlation between its sub-systems and systems for supplying the inspection object to the irradiation position of the electro-optical device in a clean state. The overall structure of the inspection device has not yet been clarified. With the increase in the diameter of the wafer to be inspected, the subsystem must also be able to respond to changes. Embodiment 2 of the present invention is proposed based on the above problems. While using the electronic optics system that uses electronic wires, provide electronic wire devices that can be used to obtain coordination between the electronic optics system and other constituent machines that constitute the device and improve the rate of good product manufacturing; electronic wire devices can be used to Improving the storage of inspection objects is related to the electronic optics system, and the loader and related devices for transporting inspection objects between the table devices used to determine the inspection object position, so as to effectively and accurately inspect the inspection objects; Line device 'can be used to solve the problem of live charging on the SEM

Ingenuity_Medium_ 'Secret (CNS) A4 Specification (2W 1 -------- Order ------- (Please read the precautions on the back before filling this page) -I nf. 539845 V. Description of the invention (45 ') The question' Precise inspection of inspection objects. Device manufacturing method 'can improve the yield by inspecting inspection objects such as wafers using the above-mentioned electronic wire device. Hereinafter, the description will be given with reference to the drawings The second embodiment of the charged particle beam device related to the present invention is used to inspect a substrate on which a pattern is formed on the surface as an inspection object, that is, the overall structure of a semiconductor inspection device for a wafer, = operation and 3 using the semiconductor inspection Device manufacturing method of device. Consumption cooperation printed by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs. As shown in Figures 5 and 6, the semiconductor inspection device includes a cassette for holding a cassette containing a plurality of wafers. Support device ι〇; small: environment device 20 '· divided into the main casing of the working room 30; is arranged between the small ring brother clothes z 0 and the courageous body, will be divided into two loading chamber loading shell Body 40; and loading the wafer by the cassette holder 10 into the main housing The loader on the table device 50 in 30; and the electronic light installed in the vacuum housing: the clothes 70 'These devices are arranged in the positional relationship shown in Fig. 5 and Fig. 6 此外. The semiconductor inspection device i further includes: a charging device 81 disposed in 30 of the vacuum main casing; a potential applying mechanism 83 (as shown in FIG. 12) for applying a potential to the wafer; and an electronic wire calibration mechanism 85 (such as The optical microscope 871 of the calibration control device 87 for determining the wafer position on the table device is shown in Fig. 13. The cassette holder 10 can hold a plurality of them (two in this embodiment) at a time. For example, 25 pieces of cassettes c (for example, closed cassettes made by ASIST, such as smif, F0up) in which wafers are arranged in parallel in the up-and-down direction. The robot automatically transfers and loads the cassette to the structure of the cassette holder 10, or (210 X 297) This paper size is suitable for A7

A7 V. Description of the invention (49 set to the outside of to 22. At this time, it can also be discharged into an exhaust pipe (not shown) located near the housing u. Calibrator 2 5 arranged in a small environmental space 2 1 , Is to detect optically or mechanically the orientation plane formed on the wafer (refers to the flat part formed on the periphery of a circular wafer, hereinafter referred to as the positioning plane) or one or more of the wafers formed on the periphery of the wafer V-notch and concave #, and determine the position of the rotation direction around the wafer axis and the line 〇_〇 in advance with an accuracy of approximately 1 degree. The calibrator constitutes the coordinates that determine the inspection object of the invention described in the application: A part of the mechanism is responsible for determining the approximate position of the inspection object. The calibrator itself only needs to have a generally known structure, so its structure and operation description are omitted. In addition, although there is no illustration, below the calibrator, There is also a recovery duct for the discharge device 'to discharge the S gas containing dust discharged from the calibrator to the outside. The line * in the middle of Figure 5 and Figure 6' is used to divide the main casing of the working room 3 i The body 30 'is provided with a case body 32' and The casing body 32 is supported by a vibration gate device mounted on the sigma frame 36, that is, a casing support device 33 mounted on the vibration isolation device 37. The casing support device 33 includes a rectangular frame structure 331. The housing main body 32 is arranged and fixed on the frame structure, and includes a bottom wall 321 and a top wall 322 placed on the frame structure, and the bottom wall 321 and a peripheral wall connected to the periphery of the top wall 322 are isolated from the outside. Work room 31. Bottom wall 321, in this embodiment, is made of a thicker steel plate in order to avoid displacement due to the weight of a device such as a table device placed on the upper side. 297 mm) 539845 V. Description of the invention (51) The receiving and receiving of signals from the table are performed by the system #p _ ^ and the table controller respectively. The controller is mainly responsible for the control of the electronic optics system (electronic grabbing, control of lens plate Zunzhai, control of high-precision power supplies such as Wiener filters, etc.). Specifically, when the magnification is changed, a certain current can be constantly irradiated on the heart-radiation area or corresponding magnification, and the voltage applied to each lens system or calibration is automatically set, and each lens corresponding to various calculation modes System or calibrator's automatic voltage setting control. The table controller mainly performs the control related to the movement of the table, so that the precise sequence movement of the heart direction (direction error of ± 05 degrees) in the y direction and the y direction can be achieved. On the other hand, the table controller controls the rotation direction of the table (0 control) within an error accuracy of ± 0.3 seconds. Printed on Figures 5 and 6 and Figures 8 and 8 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The loading case 40 is provided with the first loading case 41 and the second loading case. U's case body 43. The housing main body 43 has a bottom wall 431 with injuries: a top wall ⑶: a peripheral wall surrounding the surroundings, a partition plate 434 'for separating the i-th loading chamber M from the second loading chamber, and the two loading chambers can be externally isolated . An opening for receiving wafers between the two loading chambers is formed in the partition plate 434, that is, an entrance 436 and 437 are formed in a portion connected to the peripheral wall 433 & small environmental device and the main casing. The case body 43 on which the case 40 is loaded is placed on and supported by the frame structure 331 of the case supporting device 33. As a result, the vibration of the ground will not be transmitted to the loading case 40 either. The entrance / exit 436 of the housing 40 and the housing 22 of the environmental device are intended to be printed on paper. The standard is CNS A4. 312766 539845. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The entrance and exit 226 are integrated, and a gate device 27 is provided to selectively prevent communication between the small environmental space 21 and the first loading chamber 41. The door device 27 includes a sealing material 271 fixed around the entrances 226 and 436 in close contact with the side wall 433; a door 272 which acts on the sealing material 271 to prevent air flow through the entrance and exit; and can drive the door to open and close Device 273. In addition, the entrance / exit 437 of the ballast case 40 and the entrance / exit 325 of the case body 32 are integrated with each other, and a gate device 45 is provided therein to selectively hermetically prevent communication between the second loading chamber 42 and the working room 31. The door device 45 includes a sealing material 451 surrounding the entrances and exits 437 and 325 and fixed in close contact with the side walls 433 and 323; a door 452 that operates with the sealing material 451 to prevent air flow through the entrance and exit; The door drive 453. In addition, a gate device is formed in the opening formed in the partition plate 4 3 4 to close the opening by the door 461 and selectively seal the communication between the first and second loading chambers. These shutter devices 27, 45, 46 can hermetically close the work chamber when closed. Since these shutter devices may have a generally known structure, detailed descriptions of the structures and operations are omitted. In addition, the supporting method of the housing 22 of the small environmental device 20 is different from the supporting method of the loading housing. In order to prevent the vibration generated from the ground through the small environmental device from being transmitted to the loading housing 40 and the main housing 30, it is preferable A cushion material for vibration isolation is arranged between the case 22 and the loading case 40, and the periphery of the entrance and the exit are enclosed in an airtight manner. The first loading chamber 41 is provided with a wafer rack, and can support a plurality of (two in this embodiment) wafers in a horizontal state with a vertical interval. '----- ------- · -------- Order --------- (Please read the notes on the back before filling this page)

312766

V. Description of the invention (53) The log 47 printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is provided with pillars 472 fixed in an upright manner at four corners of a rectangular base plate 471 as shown in FIG. 9. Each pillar 472 has two support sections 473 and 474. The support section allows the periphery of the wafer W to be loaded and held on the support section. The front ends of the robot arms of the first and second conveying devices described below can be held between adjacent pillars and wafers, and the crystal H can be held by the robot arms. The loading chambers 41 and 42 can be controlled by the I-air exhaust system (not shown in the high vacuum state (vacuum degree is 1 () _ 5 to iG_6pa) with a generally well-known structure without any picture | empty fruit | At this time, the i-th loading chamber 4 j is maintained in a low vacuum state as a vacuum chamber, and the second loading chamber 42 is maintained in a high-vacuum state as a return state, which can effectively prevent crystals. Circular pollution. By adopting this structure, the wafers contained in the loading chamber to be inspected for defects can be quickly transferred to work. By using this loading chamber, the principle of the multi-beam electronic wire device described later is used. In the same way, the manufacturing rate of good products for defect inspection can be improved, and the vacuum around the electron source that must be kept in a high vacuum state can be maintained in a high vacuum state as much as possible. In addition, the vacuum exhaust system, the system It consists of a vacuum pump, a vacuum valve, a vacuum gauge, a vacuum distributor, etc., and performs the vacuum exhaust of the electro-optical system, the detector section, the sample chamber, and the lock chamber in accordance with a predetermined sequence. The vacuum valve is controlled to achieve the necessary in each department Degree of vacuum. So, enter Regular vacuum detection, in the event of an abnormality, the emergency control of the isolation valve by interlocking function to ensure the vacuum. On the vacuum pump, a turbo molecular pump is used in the main exhaust, and for rough suction On the other hand, a screw-type dry pump is used. The inspection site (electron beam irradiating part) has a force of 10.3 to 1 〇_5pa, and is ideally based on the next I t ---------- (Please read the precautions on the back before filling this page) 312766 539845 A7 b / V. Description of the invention (54) 10 · 4 to 10_6Pa is more practical. ~ The first and second loading chambers 41 and 42 are connected to a vacuum respectively Exhaust piping and venting piping for inert gas (such as dry pure nitrogen) (both are not shown in the figure :). By this, the atmospheric pressure state in each loading chamber can be controlled by inert gas vent pipe (injecting inert gas to prevent (Oxygen adheres to the surface). This kind of inert gas snorkel device may have a generally known structure, so detailed description of its structure and operation is omitted. In addition, the inspection device of the present invention using an electronic wire is regarded as Electronic Optics When the lanthanum hexaboride (La6), which is a typical electron beam source, is heated to a high temperature that can release hot electron beams at one time, in order to avoid shortening its life, care should be taken not to expose it to oxygen as much as possible. The above-mentioned control is carried out in a stage before the wafer is transferred into the working room in which the electro-optical system is arranged, and it is surely implemented. The table device 50 is provided on the bottom wall 321 of the main casing 30. Fixed stage 51 on the fixed stage; Ya stage 52 moving on the fixed stage in the γ direction (the direction perpendicular to the paper surface in Fig. 5); on the Y stage moved in the X direction (left and right direction in Fig. 3) Rotary stage 53; a rotary port 54, and a holder 55 arranged on the rotary table 54 that can be rotated on the stage. The wafer is releasably held on the wafer mounting surface 551 of the holder 55. The holder may be a generally known structure capable of mechanically or electrostatically chucking and releasably supporting a wafer. The degaussing table device 50 uses a servo motor, a decoder, and various sensors (not shown). By operating the plurality of tables, the wafers held by the support frame can Corresponds to the W scale of the electro-optical device. 312766 539845 A7

539845 A7 V. Description of the invention (56) Conduction of voltage application. In addition, in this embodiment, although the left and right sides in the (a) of FIG. 6 are used as :: the table is used as the X table, and the table moved upward and downward is used as the Y table. As shown in the figure, the work table 2 moving in the left-right direction is used as the work table for Y, and the work table moving in the up-down direction is used as A. The loader 60 includes a robot-type second W-transporting device 61 disposed in the housing 2 of the small environmental device, and a robot-type second transporting device 63 disposed in the second loading chamber 42. The first conveying device 61 includes a multi-section robotic arm 612, and can rotate the driving axis around the axis 〇1_01. The multi-section type robot arm is provided with :: == ', but in this embodiment, the robot arm has a-part of 3 robot arms 设置 arranged in a rotatable manner, that is, a driving part. 61 = Two-positioned: It is installed in the one that can be rotated by the one installed in the driving part 611 ... The robot arm 612 can be divided by. Axis 613 = Up: Rotate outside the center. “The front end of the third part of the second round of the second round of the Yun Eryun printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs can be used to hold the crystal-like, general-structured machinery. Below the holding device such as a chuck or an electrostatic chuck ^ 611, it can be moved in the vertical direction by a lifting mechanism 615 of a general structure. Holder ===, its robotic arm 612 is to hold ... to keep the card "stretched in either direction M1 or M2 '. The wafer in cut C is placed on the robotic arm or loaded by-( 210 X 297 mm) 312766 539845 A7 V. Description of the invention (^) The chuck (not shown) placed at the front of the robot arm holds Ψ ^ ^ ^ xm / \, the robot arm shrinks (as shown in Figure 6⑷) The state shown) is rotated toward the pre-calibrator M to a stretchable position and stopped at that position. After that, the robot arm is extended again and the wafer held on the robot arm is placed on the pre-calibrator M. The front axis is reversed. 'After receiving, the mechanical material core makes 4 turns in advance, and extends toward the second loading chamber 41 and stops at its stretchable position (: device direction :)' Finally, the wafer is delivered to the second loading chamber. When the wafer is mechanically held, the peripheral part of the wafer is held (a range of about 5 from the peripheral edge). This is because a device (circuit wiring) has been formed on all sides of the wafer except for the peripheral part. If the device is held to this part, the device will be damaged and defects will be generated. The second conveying device 63 is approximately the same in structure as the first conveying device, and the two are performed only between the mounting surfaces printed by the consumer property cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and the printing machine for the second stage. Different, so m field explained. In the loader 60 described above, the first and second conveying devices "and 63" are carried out in a state where they are kept approximately horizontal, from the card E held on the cassette support to the workbench device arranged in the working room 31. The wafer is moved in the direction of 50 ° or its opposite direction, and the robot arm of the transfer device only moves up and down when: the wafer is taken out or inserted into the card E; the wafer is placed in or removed from the wafer rack; and The wafer is placed in the device obtained from the table. Therefore, even large wafers, such as wafers with a diameter of 30 cm, can be smoothly moved. Second, the instructions from the cassette held on the cassette holder to the The wafer transfer process of the workbench device 50 arranged in the working room 31. 312766 Printed by the Chinese Ministry of Economic Affairs 539845 A7. 5. Description of the invention (%)% " '---- can be 10, as mentioned above Generally, "the structure is installed when the card e is manually installed, and the structure is automatically installed," and when the cassette is automatically installed, the installation method suitable for the installation is used, and the skin is installed to the cutting support. When the card holder 10 is lowered onto the platform 11 Taiwan will u drop by drop on the lift mechanism 12 territories cho Ding Jian across the entrance Η people. Lower and make Ka Kun C align with the entrance and exit 225 ° After integration of Ka Kuang with the entrance and exit, it is set to cut open, and the card Ec and the entrance and exit of the small environment are arranged with a ^ -shaped cover, and by Qiu Cheng "Guang" leather configuration with the same department. Due to the detailed description of this structure and small environmental space. Besides! Xing ^ Mu, its structure and operation are slightly omitted. The gate device of the entrance 225: side 2 is provided with a switchable entrance 225. When set, the gate device will act to open the other-aspect's first conveying device 61. The mechanical arm of the first conveying device 61 faces either one of M1 or M2, and prepares the entrance and exit 225. (In the direction of M1 in this description) ) Stop two; the robotic arm is extended to the front to receive one of the wafers that has been trapped in the card. Between the two wafers taken out of the cassette, the position adjustment in the up and down direction of the "+" card, and in the case of this real flower, is based on the up and down movement of the conveying device 61 " The drive part 611 and the robot arm 61: move up and down to move in, but it can also be borrowed to move, or by both ρ… = After the wafer is received by the robot arm 612, the robot arm will shrink M The door device actuates to close the entrance and exit (when there is a gate device), after which the 'arm arm ⑴ turns around the vehicle line 0-H and moves in the direction 1-~--___

This paper size _ _ Tsukam Standard (CNS) A4 specification ⑵Q 312766 ------------ IP equipment ---- τ --Order --------- (Please read the Note to fill out this page again}

MW 539845 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention (59) So the 'arm extends forward and the wafer placed on the front end or from the Huai-Ai is placed on the pre-calibrator 25, and then With this pre-calibration, the rotation direction of the wafer (peripheral direction of the central axis perpendicular to the wafer plane) is positioned within an An 1 ^ 1, 疋 consumption range. After Yuan Cheng is positioned, the conveying device 61 retracts the robot arm when the wafer is received by the pre-calibrator 25 at the front end of the robot arm, and makes the robot arm extend in the direction of M4. By this, the gate 272 of the shutter device 27 is moved and the populations 226 and 436 are opened, and the robot arm is extended to place the wafer on the upper side or the lower side of the wafer holder 47 in the first loading chamber 41. As described above, before the shutter device 27 is opened and the wafer is sent to the wafer frame 47, the opening 435 formed in the partition plate 43 closes the door 461 by the shutter device 46 in a confidential state. During the wafer transfer process by the first transfer device, the clean-up air flows out of the gas supply device 231 (as a downstream) provided in the casing of the small environmental device in a laminar flow to avoid dust. It adheres to the surface of the wafer during transportation. A part of the empty device around the conveying device (in this embodiment, "> 20% of the air supplied by the supply device, mainly unstained air) is sucked into the suction duct 241 of the discharge device 24 and discharged. To the outside of the case. The remaining air is recovered by the recovery duct 232 provided at the bottom of the casing and returned to the gas supply device 231 again. When the wafer is placed by the first transfer device 61 in the wafer rack 47 in the first loading chamber 41 of the loading chamber 40, the shutter device 27 is closed to seal the inside of the loading chamber 41. In this way, the first loading chamber 41 is filled with an inert gas, and as the air is discharged, the inert gas is also discharged, so that the inside of the loading chamber 41 becomes a vacuum state. The vacuum state of the first loading chamber is based on the paper size of China National Standard (CNS) A4 (210 X 297 mm) 59-312766. ------- Order --------- Line (Please read the notes on the back before filling out this page) 539845 A7 ---------- BT___ V. Description of the invention (60) '^ 疋 71 work. When the degree of vacuum in the loading chamber 41 reaches a certain level, the gate device 46 is activated to open the entrance 434 closed by the door 461, and the mechanical arm 632 of the second conveying device 63 is extended outward and the handle is set to The wafer receiver 47 receives a wafer (mounted on the front end or held by a chuck mounted on the front end). After receiving the wafer, the machine “retracts” and the gate device 46 is activated again to close the entrance 435 with the door 46 丨 In addition, before opening the gate device 46, the robot arm 632 will appear in the direction of the wafer chuck 47 in advance N1 stretched posture. In addition, as described above, before the gate device 46 is opened, the entrances 43 7 and 325 are closed by the door 452 of the gate device 45, and the ventilation in the second loading chamber 42 and the working room 31 is blocked in an airtight state, and The second loading chamber 42 is evacuated. ... After the gate device 46 closes the entrance and exit, the second loading chamber performs true second exhaust again 'to achieve a higher degree of vacuum than that in the first loading chamber. In the meantime, the robot arm of the second conveying device 61 is rotated at a position that can be extended toward the table device 50 within the working range 31. On the other hand, the Y table 52 moves upward in FIG. 6 (a) to the X axis XI-XI of the return axis 02-02 of the second conveying device 63 with the center line X0-X0 of the χ table 53 Approximately the same position, and stand by in this state. When the vacuum state of the second loading chamber and the working chamber is approximately the same, when the door 452 of the gate device 45 starts to operate and opens the entrance 437, the robot arm is extended and the front end of the robot arm holding the wafer approaches the working chamber. 3! (Please read the precautions on the back before filling out this page) ------ Order ---------. The paper printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs applies the Chinese national standard ( CNS) A4 size (210x 297 mm) 60 312766 539845 A7 V. Table device in the description of the invention (61). Finally, the wafer is placed on the mounting surface 551 of the F-port 50 on the table. After the wafer loading is completed, the robot arm is reset, and the gate device 45 closes the entrances 437, 325. In the above, although the operation of transferring the wafer in the card £ C to the workbench device has been described, the wafer that is intended to be placed on the workbench device and completed the processing is sent again by the workbench device + k When the box 14 is in the box C, the reverse operation is performed. In addition, in order to place a plurality of wafers on the wafer rack a, the second transfer device can be used to transfer wafers between the wafer rack and the table device using the first transfer device in the + cassette and the wafer. The wafers are transferred between the circular racks, so that the inspection process can be effectively performed. Specifically, when the wafer carrier 47 of the second transfer device includes both processed wafers and unprocessed wafers, first, the wafers to be processed are moved to the table device 50 to start. deal with. In this process, the processed wafer A is moved from the table device 50 to the wafer rack by the robot arm, and the wafer c to be processed is also pulled out of the wafer rack by the robot arm. After positioning with the calibrator, it moves to the wafer rack 47 of the loading chamber 41. Thereby, during the processing of the wafer B, the processed wafer A can be replaced with the unprocessed wafer c in the wafer rack 47. In addition, in the method using such a device for inspection or evaluation, a plurality of table devices 50 can be juxtaposed at the same time. By moving a wafer from one wafer rack 47 to each device, a plurality of device The wafer is processed the same. Fig. Ϊ0 is a modification of the method for supporting the main casing. In the modified example _ shown in Fig. 10 [A], a thick rectangular steel plate 331a is used to form the casing to support the national standard (CNS) A4 rule of the paper —L χ 297 public hair 539845 A7 --- * --- ----— B7______ 5. Description of the Invention (63): Department 72, an optical system that irradiates the surface of the wafer w to be inspected with electron beams, and has an electron beam source 72 for releasing electron beams. ; A lens system 722 formed by an electrostatic lens for collecting primary electrons emitted by the electrons; a Wiener filter (ie, an EXB splitter or an E x B filtered state) 723; and an objective lens system 724 These devices, as shown in FIG. 丨, are arranged with the electron beam source 721 at the top. The lens constituting the objective lens system 724 of the embodiment L is a deceleration electric field type objective lens. In this embodiment, the optical axis of the primary electron beam emitted from the electron beam source 721 is inclined with respect to the irradiation optical axis (perpendicular to the wafer surface) irradiating the wafer W to be inspected. An electrode 725 is disposed between the objective lens system 724 and the wafer w to be inspected. The electrode 725 has a symmetrical shape with the optical axis of the primary electron beam, and voltage control is performed by a power source 726. The primary optical system 74 includes a lens system 74 1 ′ formed of an electrostatic lens, and the electrostatic lens system passes a secondary electron line separated from the primary optical system by a Wiener filter 723. This lens system 741 is used as an enlargement lens for enlarging a secondary electron line image. The detection system 76 'includes a detector 761 and an image processing unit 763 arranged on the imaging surface of the lens system 74. The operation of the above-mentioned electro-optical device 70 will be described below. The primary electron beams emitted from the electron beam source 72 1 are bundled by a lens system 722 I. The collected primary electron beams are incident on the E B-type deflector, and are deflected so as to be irradiated vertically on the surface of the wafer W, and are imaged on the surface of the wafer w by the objective lens system 724. This paper size is applicable to China National Standard (CNS) A4 (210 x 297 mm) 63 (correction page) -------------- installation-(Please read the precautions on the back before (Fill in this page) Order-Printed-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 312766 539845 A7 B7 V. Description of the invention (65) The electronic substrates are used to inspect the substrates of the inspected objects of the inspectors. That is, the wafer, such as a device such as a device image for inspecting the surface of the t-shaped surface, even if information such as secondary electron lines generated by electricity; line makeup is used as the information on the wafer surface, it will still be due to the wafer material. The irradiation of the wire can make the wafer surface in accordance with the material conditions: Bu 'wafer surface may also have a strong charge where the disk is weakly charged. When the amount of charge on the wafer surface is uneven, it will also cause unevenness in the information of the two electron lines, and it is impossible to obtain correct information. Therefore, in this embodiment, in order to prevent this unevenness, a desire line charging device 8 having an electron beam irradiation unit 811 is provided to irradiate the inspection electron beams at a designated portion of the inspection circle to remove the unevenness of electrification. On the other hand, the electron beam irradiating part 811 of the pre-charging device irradiates the electron beam to cut off the tape. The charging of the wafer surface will be pre-formed. An image of the wafer surface that detects symmetry is first formed, the image is detected by mistake, and then the pre-charging device is activated based on the detection 8]. In addition, the pre-charging device can also illuminate light. ^ Fig. 2 shows that the potential applying mechanism 83 is based on the fact that the secondary electron beam information (secondary electron beam occurrence rate) released by the wafer depends on the wafer potential. The setting table of the working table applies a potential of ± several v to control the generation of the secondary electron beam. In addition, the potential application mechanism also has a function of slowing down all of the original energy of the irradiated electron beam to become an electron beam energy source that irradiates the wafer with about 100 to 500 ev. As shown in FIG. 2, the potential application mechanism 83 includes a voltage application device gw electrically connected to the mounting surface 541 of the table device 50; a charging survey and voltage determination system (hereinafter referred to as a survey and determination system) . Tuned 312766 page guideline 539845 printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of Invention (%) Inspection and decision system 832, which includes: Image formation with the detection system 76 of the electro-optical device 7 () The unit 763 is a monitor 833 which is connected in a pad; a differentiator 834 connected to the monitor 833; and a CPU 835 connected to the computing unit. The CPU 835 'can supply a signal to the aforementioned voltage application device 831. The potential applying mechanism is designed to find a potential that is not easily charged on the wafer to be inspected and apply the potential. In Fig. 13, the electron beam calibration mechanism 85 is provided at a plurality of positions on the side of the male loading surface 541 of the screw, and includes a plurality of Faraday cups 851 and 852 for measuring the electron beam current. Faraday cup 851 is used for thinner electron beams (about 02_ 'and Faraday cup 852 is used for thicker electron beams (about 43μπ1). The system for thinner electron beams is moved by stepping the rotary table' The electron beam cross section is measured, while the Faraday cup 852, which is used for the thicker electron beam, measures the total current of the electron beam. The Faraday cups 851 and 852 are on the upper surface and the wafer w placed on the mounting surface 541. The f surface is configured in a south-echelon manner. In this way, the secondary electron beams released by the electron beam source can be constantly monitored. This is that the electron beam source can often release a certain amount of electron beam, and when it is in use, its release amount There will be changes. The calibration control device 87 is used for work a and installed 70 # days. Operation. Device 50 will be used for the electronic light '% & position setting' to control the use of optical mines: two The outline adjustment of the wafer performed by the visual field observation (for a kind of comparison. The electrical magnification adjustment of the built-in electronic optical device 70 'focus adjustment, inspection area setting, and figure. In order to automatically check the wafer pattern, you must use an electronic wire : Ϊ́The paper size is applicable to the CN ^ A4 specification ◦ χ 297 疋 -------- Order --------- (Please read the notes on the back before filling in this page) V. Description of the invention (67) On time, the Ricci's cord easily detected the calibration mark. The optical microscope 871 was installed in the casing 71 (also removable in the casing " replaceable "), and also useful in the body. Start the light source "," of the optical microscope). If the structure is shown in a schematic diagram, it will be as shown in the figure. It is interesting. In order to observe the observed point on the wafer at a low magnification, you can work by: The X stage of the device 50 moves in the direction of the X, so that the observed point of the wafer moves to the field of view of the optical microscope. The optical microscope 871 inspects the wafer in Hiroshima, and the day is adjusted by your bucket ρϊ m 872 The observation position on the Japanese yen is displayed on the monitor 873. The observation position is determined roughly. At this time, the magnification of the optical microscope can also be adjusted from a low magnification to a high magnification. Device 70, the distance "between the optical axis and the optical axis of the optical microscope 871, The observation point on the wafer determined in advance moves to the position of the field of view of the electro-optical device. At this time, the distance between the axis of the electro-optical device 〇3-〇3 and the optical axis m of the optical microscope 04_04 (in this embodiment In the middle, the two are separated only in the direction along the X axis, but they can also be placed in the direction of Y and K and 5 axes) 5χ to know in advance. The observed point moves to the inspection position. After completing the steps of moving the observed point to: the inspection position of the sub-optical device, you can enter the SEM camera of the observed point with the electron light g-system magnification and store the image, or borrow the image纟 CCD761 is displayed on monitor 765. This: 乂 The high magnification of the electronic optics system will show the observation point of the wafer. The lonely ancestors will be detected by the general method. The paper with the table device is rotated. The paper size is suitable for financial countries such as public meals. 539845 A7 B7. 2. Description of the invention (68): The position deviation of the rotation direction of the wafer related to the rotation center of 54, that is, the position deviation of the μ-axis and γ-axis directions of the teaching pattern related to the electronic optical dress. Then according to the detection Values and other tools are used to set the wafer—marked breeding material or data related to the shape of the wafer pattern, to control the operation of the device △ device 50 and perform wafer calibration. For the above, use the fifth The inspection device described in FIG. 14 to FIG. 14 is used for the wafer inspection process of the wafer manufacturer of the device manufacturer described in (3) and FIG. The inspection of good product manufacturing rate can be carried out, so all inspections can be performed to 'enhance product yield and prevent shipment of defective products: At this point, since the descriptions in Figures 3 and 4 are used, the This description is omitted here. A related embodiment (a third embodiment is opened. Here, FIG. 15 is used to explain an electronic wire device according to a third embodiment of the electronic wire arrangement related to the present invention. This electronic wire device is suitable for a high-quality product. Manufacturing rate and high reliability We evaluate wafers, masks, and other samples with a pattern with a minimum line width of 0.01 micrometers or less, and inspect them for device manufacturing. — The use of multi-beam electronic wire devices is generally known. For example, the following electronic wire devices are commonly known devices: · Released from an electronic wire source: One or more electronic wires of a certain diameter and imaged on the surface of the sample to be inspected. The electronic wire scans the surface of the test sample, and the paper size released by the test sample is detected by a plurality of detection elements. The paper size applicable to the Chinese National Standard (CNS) A4 specification (2) 0X 297 mm 312766

I I I Order i I V. Description of the invention (69) secondary electron beams or reflected electron beams, and then process the output of these detection elements simultaneously or in parallel to shorten the evaluation time of fine patterns. In addition, another micro-pattern evaluation device is also a well-known device. That is, in order to eliminate the dot scatter of the electron lines released from a plurality of electron beam sources, and to improve the evaluation accuracy of the micro-patterns, a plural number is used. The primary electron beam irradiates the test sample, and according to each primary electron beam, the secondary electron beam and the reflected electron beam released by 2 are inspected, and then the electrode voltage or the excitation current of each primary electron beam is individually adjusted. This kind of multi-beam line electronic device requires different vacuum degrees in the part of the electron beam source and the lens and deflection system. For example, in the case of an electron beam source of a multi-emitter type or a thermal field release type, if the vicinity of the cathode of the electron beam source does not reach a good vacuum of 10, 0ΓΓ, and it is impossible to operate safely, the lens is biased. In addition, even if an electrostatic lens or electrostatic deflection is used, as long as the vacuum degree is about 10-6 torr, it can fully operate. Therefore, there is a problem that a certain degree of vacuum must be maintained in accordance with the constituent elements of each electronic wire device. / In addition, due to the existence of many ions printed on the optical axis of the electron beam in the electron optical tube by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, positive ions collide with the cathode of the electron source, creating holes in the cathode. . In addition, when manufacturing a multi-beam and multi-cylinder electronic wire device, there is no clear solution to the problem of how to fix each cylinder. The electronic device shown in FIG. 15 is proposed to solve the above problems. When the vacuum degree of the lens and the deflection system is low, the electron source P can be maintained at the same vacuum degree to prevent the electron source. The cathode is broken, and there are 539845 A7 15 / 5. Description of the invention (, features that are good for anti-vibration. In Figure 15, the electronic wire device has a multi-beam and multi-cylinder structure, and is fixed at both ends. The thick partition plate s on the lens barrel (not shown) is divided into an electron beam source portion X and an electron optical system γ. The electron beam source portion χ is provided with a cylindrical shape and each is formed by a corrugated tube 9〇 2 A plurality of combined electron beam source chambers 901. Each electron beam source chamber 901 is provided with a thermal field release type electron beam source 905 having a tfe cathode 903 and a Schottky shield 904. Each electron The wire source 905 is powered by a high-voltage cable, and the electron wire is released from the cathode 903. In addition, it is the abbreviation of thermal, electric field, and release of electric breast. Each electron beam source chamber 901 is fixed to the partition plate s by a screw 907. Therefore, the partition plate S must have a certain thickness to maintain a certain rigidity. When the rigidity of the partition plate S is insufficient, it is preferable that a reinforcing rib can be arranged between the adjacent electron source chambers 901. In addition, each electron beam source chamber is just connected to an ion pump (not shown) for exhausting. In order to allow all the electron wires released by the 905 # TFE cathode 3 box frame (301) or 00) of each electron wire source to pass through the partition plate s, the partition plate s' uses each electron wire A certain number is formed on a circumference centered on the optical axis of the electron beam source 905 of the source chamber 905, for example, four holes 908. These holes 卯 8 have a large aspect ratio (aperture ratio corresponding to the length of the holes) to prevent: the deterioration of the vacuum of the wire source chamber, the farther away from the TFE cathode 903, the larger the aperture. The holes 9G8 ′ can also be set to be inclined further away from the optical axis as they go downward. The aspect ratio is generally 10 or more. On the other hand, the Department of Electro-Optics has applicable Chinese national standards ((: two ^ grids) to correspond to the paper size of each electron source room. Χ 2 ~ — 312766 539845 A7 --s __— B7__ 5. Description of the invention ( 71) '---- (Please read the precautions on the back before filling out this page) 901 and the lens and deflection system 910 provided to adjust the shape of each electron beam' to use the multiple electron beam source chamber 901 The released plurality of electron beams irradiate samples such as wafers. Each lens and deflection system 910 is provided with four holes for enclosing the electron beams passing through the corresponding electron beam source 905: 08 = borrow An elongated tube 909 fixed to the partition plate s by a screw 911. A required lens and a deflection H are arranged in each tube 909, and an electronic wire passing through the partition plate s, for example, 4 holes 908 can be placed. It is shaped so as to be incident perpendicularly to the sample W. In this way, it constitutes a multi-cylinder electron optics system. Γ Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Therefore, each lens and deflection system 910 is arranged in the tube 909 in order Condensing lens 912, multi-opening plate 913, reduction lens 914, deflector 915, and objective lens 91 6. Condensing lens 912 is used to condense the electron beam passing through the holes 908 formed in the partition plate S. The multi-opening plate 913 is provided to allow the electron beams condensed by the lens 912 to pass through: The hole 908 and the same number of small holes in the part of the partition plate S surrounded by the tube 009. The reduction lens 914 is used to reduce the beam size and interval of the electron beam passing through the multi-opening plate 913 to pass through the deflector 915. The deflector 915 is used to change the traveling direction of the electron beam so that the electron beam reduced by the reduction lens 914 can be scanned on the sample. The objective lens 916 is used to focus the electron beam passing through the deflector 915 on the sample W. Each tube 909 is provided with an exhaust hole 917, whereby a tube that holds the partition plate S, the electron beam portion X, and the lens barrel (not shown) of the electron optical system γ in a vacuum can be maintained. The interior of each tube 909 is also kept in a vacuum. In addition, the required voltage can be applied to the condenser lens 91 2 and the multi-opening plate 9 1 3 by the guide line shown by the dotted line in FIG. 15. , Reduction lens 91 4 ， This paper size applies to China National Standard (CNS) A4 (210 x 297 mm) (Centimeter) 71 312766 539845 A7 V. Description of the invention (that is) deflector 915 and objective lens 916. According to need, the condenser lens 912, the multi-opening plate 913, the reduction lens 914, and the 915 and The objective lens 916 is installed on the inner wall of the tube 909. The electronic wire device shown in Fig. 15 is used as an evaluation device for defect inspection, line width measurement, calibration accuracy measurement, potential contrast measurement, defect inspection or stroboscope. The wafer evaluation during the manufacturing process can also be used in the inspection process described in ⑷ '(b) with reference to Figs. 3 and 4. Because of this, disks 3 and 4 are used. D, U The explanations related to (a) and (b) in Fig. 4 and Fig. 4 are omitted here. Embodiment related to the electrode structure (Fourth Embodiment) The fourth embodiment of the present invention relates to an electronic wire device, that is, a method for manufacturing the device using the device. The flaws include: using the electron beam to irradiate the sample In the electronic optics system of the electrostatic lens of the present invention, the electrode structure for preventing insulation damage has been used until now. In order to check the surface state of fine samples that cannot obtain considerable sensitivity and resolution with only optical inspection, the use of high electron beams has been used. Sensitivity, high-resolution electronic wire devices are reviewed. This type of electronic wire device emits an electron wire from an electron wire source, and accelerates or condenses the released electron wire by means of an electrostatic optical system such as an electrostatic lens so as to be incident on a sample to be inspected. Secondly, a secondary electron beam released from a sample is detected by the incident of the electron beam, thereby generating a signal corresponding to one of the detected human-electron wires, and by using the signal, data such as a sample can be formed. With the formation data, the surface state of the sample can be checked. This paper uses electrostatic lenses such as electrostatic lenses used in this kind of electronic wire device. The paper size is applicable._ Tsukazumi (cns) A4 312766 (Please read the precautions on the back before filling this page) -------- tr— * ------ Aw. V. Description of the invention (73) In the electron optics system of the mirror, the electrodes used to generate the electric field that accelerates or condenses the electron beams are arranged in multiple segments in the direction of the optical axis of the electron beams. A certain amount of electricity is applied to these electrodes, respectively, and the electrons are accelerated by the electric field 'generated by the potential difference of the electrodes, and the electron beams are accelerated to a specified point on the optical axis. In the previous electronic wire device, 'sometimes, a part of the electron wire released from the electron wire source' sometimes collided with the electrode without intersecting the electric field in the electron optical system using an electrostatic lens. . At this time, the secondary electron line will be released from the electrode itself by the electron line conflicting with the electrode. 9 4 of the secondary electron rays released by this electrode will change depending on the electrode material or the electrode coating: material. When the secondary electron line released by the electrode becomes more%, the secondary electron line will be accelerated by the electric field of the electrode, and the residual gas in the device will be ionized, and then the ion will collide with the electrode and go further. A secondary electron beam is released from the electrode. Therefore, when a large amount of secondary electrons are released, discharges are easily generated between the electrodes, and the probability of edge destruction is increased. For example, the probability of destruction is greater than two. 4.9 [eV] 〇Compare the insulation function between the aluminum-clad electrode and the gold-clad electrode. The power function of the insulation breakdown between the electrodes caused by the aluminum-clad layer is 4.2 [eV]. The power function of gold It is the specified power function, which refers to the minimum energy (unit: eV) required to remove an electron wire in a metal in a vacuum. ^ ‘When the electrode is fine gold’ and the sample of the electronic wire device is half or round, gold will be hidden and attached to the surface of the semiconductor wafer because the electronic wire conflicts with the metal of the coating. When gold is attached to the semiconductor watch 539845 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. The invention description (75) will widen accordingly 'Therefore when the electronic device is in a vacuum state, there will be a release from the insulating material When the gas is increased. In addition, the vacuum degree is deteriorated, and the breakdown voltage between the electrodes is increased. The fourth embodiment of the present invention proposes a solution to this problem. In the following "for the fourth embodiment", an electronic wire device capable of preventing insulation breakdown between electrodes of an electrostatic optical system is applied to imaging having an electrostatic optical system. In the case of a projection-type evaluation device, the configuration and operation of the imaging projection-type evaluation device and the method of manufacturing the device using the device are described. In FIG. 16, the imaging projection type evaluation device 1000 has a certain radiation surface for the electron beams irradiating the chamber material, and the secondary electron beams radiated from the sample by the electron beam irradiation also have a certain emission. surface. The electron beam source 1001 emits electron beams having a secondary element area, such as a rectangular radiation surface, and is deflected to a specified direction by the electrostatic lens system 1002. The deflected electron beam enters the EXB deflector 1003 obliquely from above, and the position of the electric field and the magnetic field of the EXB deflector 1003 is deflected to the direction of the semiconductor wafer 1006 of the sample. (Solid line in FIG. 16) The electron line deflected by the χ × -type deflector 1003 to the semiconductor wafer 1006 is applied by the voltage applied to the electrode in the objective lens system 1005 by static electricity. The generated electric field is decelerated, and the objective lens system 1005 is imaged on the semiconductor wafer 1006 by static electricity. It is believed that the human electron line generated by irradiating the electron beam of the semiconductor wafer 1 006 is accelerated toward the detector 1008 by the electric field of the objective lens system 1005 by static electricity (such as the dotted line in FIG. 6) , And incident on the ΕχΒ-type deflection 0 1 1003 〇 ΕχΒ-type deflector 1003, the accelerated secondary electron beam paper size suitable for financial standards ⑵ Q χ view ------ 75 (correction page) 3〗 2766 ^ -------- ^ --------- line (please read the precautions on the back before filling this page) 539845 A7

Μ order --------- line (please read the precautions on the back before filling out this page) 539845 A7 V. Description of the invention (79) The electrodes 102 0 and 1022 3 are inserted between the M4 electrodes for insulation The spacer plate 1026, the insulating spacer plate 1026 'supports the electrode 1020 in a slightly vertical manner. The shortest creepage distance between the insulation spacers between the electrodes is slightly m from the electrode distance of the supported electrode portion t, that is, the surface of the insulation spacer 1026 between the electrodes is not wrinkled in the direction between the electrodes. , And approximately straight. The electrode 1022 is an i-th electrode surface 1022b that forms the shortest distance between the electrodes; a second electrode surface 1022c having a longer distance between the electrodes than the first electrode surface b; the first electrode surface 1022b and the first electrode surface 1022b. Between the two electrode surfaces 102, there is a step difference 1022d in the direction between the two electrodes (Fig. 21). The insulating spacer 1026 supports the electrode 1022 with the second electrode surface 1022c. Since the anode 1022 has such a shape, the shortest distance between the electrodes can be kept at a predetermined distance, and the surface of the insulator spacer 1026 need not be processed into a wrinkle in the direction between the electrodes, so that The shortest creepage distance of the insulating spacer 1026 is made longer than the shortest distance between the electrodes. … Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In addition, since a large electric field is not applied to the surface of the insulating spacer 1026, creeping discharge is not easy to occur. Therefore, the electric objective lens system 1005 can be made into an electrostatic objective lens with a short focal distance, and it can be made into a low aberration and high resolution energy. The insulation performance is not reduced, so it can prevent the insulation damage between the electrodes. In addition, since a step difference of 1 022d is provided in the metal electrode j 〇22, the processing cost will be lower than that of the insulating spacer 1 026. In addition, because the insulation spacers in the direction of the electrodes are 79, the paper size is applicable to China's national standard (CNS) A4 size ⑵0 x 297 public love) 539845 This paper is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. A7 V. Description of the invention (81) determination; calibration accuracy measurement; connection measurement; ancient heart, and time-dependent energy potential comparison measurement. A Wiener filter is used to separate the primary electric current from the green and the secondary lightning released from the sample irradiated by the primary electrical early wire. The electronic wire device of the sub-line is generally known. For example, the electron source is released by the electron source so that it forms a predetermined angle corresponding to the optical axis perpendicular to the sample. The Wiener filter is used to make the travel direction of the primary electron line along the cylinder. The first axis is deflected, and the primary electron line is perpendicularly incident on the sample. With Wiener's voicing wave, the secondary electron line released from the sample is separated from the primary electron line and travels along the optical axis, and finally incident on the detection The electronic wire device of the device is generally familiar. In addition, the primary electron line can be incident perpendicularly to the sample, and Jiang: Tian & l ya will separate the secondary electron line released from the sample by this, and the ε × separator will separate the eight private lines from the first time. Electronic wire devices that input the detector are also generally known devices. This kind of previous electronic wire device, when the energy range of the primary electron wire is large, matches the energy possessed by the secondary electron wire, and the angle of deflection by the ΕχΒ separator will be different, which will cause the primary electron The line produces chromatic aberration ', which causes a problem that the light beam formed by the secondary electron line cannot be bundled. In addition, the problem of chromatic aberration also occurs when letting the sample be released by a single irradiation of electron beams--shared fee. Lh ΊΙ ^ 扪 一 —The human electron wire travels straight along the optical axis and is incident on the k-measurement. Electronic wire device. When the energy range of the secondary electron line released from the sample is wide, when the secondary electron line passes through the secondary optical system, chromatic aberration will occur, which will adversely affect the correct detection of the secondary electron line. The fifth embodiment of the present invention is to provide a device for solving the problem of the previous electronic line U 线 question @ 提 ^ ', which can be used once (correction page) 312766--------- --- Installation ------ Order --------- {Please read the precautions on the back before filling this page) 539845 A7 B7 V. Description of the invention (82) Electronic wire bundle to scan the sample In the electronic wire device, the influence of the chromatic aberration of the Wiener filter is greatly reduced, or the secondary electron wire is used for image projection and detection

In the electronic wire device of the like, the chromatic aberration in the energy range due to the secondary electron wire is greatly reduced. N In addition, the fifth embodiment of the present invention is very suitable for a defect inspection device using an electronic wire device which reduces such a color difference. In addition, this kind of defect inspection device can also be applied to a device manufacturing method to perform wafer inspection during the manufacturing process. In Fig. 22, corresponding to the optical axis perpendicular to the sample, the primary system including the electron beam source and the secondary system including the detector are arranged at a predetermined angle on opposite sides of each other. In FIG. 22, the primary electron beam 1102 released by the electron beam source 1101 is shaped into a rectangle by an opening (not shown), and is reduced by the lenses 1103 and 1104 to be incident on the Wiener filter 11 〇5. At this time, the angle formed by the primary electron beam 1102 and the optical axis X is set to / that is, the Wiener filter 1105 is provided with an electrode 1106 for producing an electric field for electrostatic deflection, and an electrode deflection for producing an electrode deflection. The magnetic field magnet u〇7, Wiener filter 1105, uses the electrostatic deflection of the electrode 1106 to turn the primary electron line 1102 incident there to the left, that is, it is biased only to the angle α to make it close to the optical axis X. By the magnetic deflection of the magnet 1107, it is deflected to the left only by an angle of 2α, and the total is deflected to the left by an angle of 3 ^, and it is caused to travel along the light extraction X perpendicular to the sample u〇8. Virtue, ^ And Ke Wumi-ren electronic wire 1102 incident on the sample through the lens system 1109, 1110! 108 to irradiate the sample 110. The angle α is, for example, 10 degrees. Two 312,766 pages released by the sample measurement by irradiation of the sub-electronic line 1102, printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed 539845 A7 -________ B7_ V. Description of the invention (83) The sub-electronic line 1111 is provided by After the lens system 11 09, 111 0 is enlarged, it is incident on the Wiener filter 1105, and by the action of the electrode 1106 and the magnet 1107, it is only deviated by α degrees to the right of the optical axis X, that is, away from the optical axis X. The direction is deflected, and the secondary electron line 1111 separated by the primary electron line by the Wiener filter 11 05 is enlarged by the secondary optical system including the lens system 1 i 丨 2, 1 11 3 and then on the detector 1114 Imaging. The detector 1114 is subjected to appropriate processing using the image processing device 1115 and stored in the image memory u6. In the fifth embodiment, the chromatic aberration generated by the Wiener filter is problematic if it is located in the secondary optical system that processes the secondary electron line 111. In order to eliminate the effect of the color difference produced by the Wiener filter no.5 on the secondary electron line, the electrostatic deflection and electromagnetic deflection effect of the wiener filter no.05 make the secondary electron lines deviate from each other in the opposite direction. , And the relationship between the angle of the electrostatic deflection effect to the secondary electron line and the angle of the electromagnetic deflection effect to the secondary electron line are maintained. Thereby, the secondary electron line U11 released by the sample ιι8 and traveling along the optical axis X is deflected only to a certain angle toward the optical axis χ and opposite to the primary electron line 1102. At the same time, the color difference caused by the energy range of the secondary electron line 11u can also be adjusted to a negligible size. Therefore, when the secondary electron line lln is incident on the Wiener wave filter 05, the electrode 1106 of the Wiener filter 1105 will use the electrostatic bias to turn the secondary electron line 1111 to the left, which is also A. ^. That is to say, the angle is closer to the optical axis X, and the magnet 1107 is to the right, that is, the y-angle is away from the optical axis X. At this time, the right will be incident on the Wiener filter] ___; The beam of the electron beam for a long time can be “magic — ~ 31276Γ -------------- install · 11 (Please read the precautions on the back first (Fill in this page again) Order · -line ----- 539845

That is, the bias is set to the optical axis X A7. V. Invention Description (84) The source is set to V0, and the secondary electron wire with an energy source smaller than Vo by AV will pass through the electrode u06 at an angle α / (1 -Δ V / V〇) = / 5 The deflection to the left from the optical axis X, that is, the deflection is close to the optical axis, and at the same time, the secondary electron line nll with energy smaller than Vo only AV is obtained by Magnet 1107 has a travel angle of only 2 α / {(1-Δ V / Vo)} 1/2 = γ is related to the optical axis X, and is deviated to the right. The first approximation is (1-Δ ν / ν〇) '1 = (1 + Δ V / Vo) and 2 {l- (AV / V〇)}-1/2 = 2 {l + (l / 2 ) (Δν / ν〇)}, so τ ^ β-2α {l + (l / 2) (AV / Vo)} «a (1 + Δν / ν〇) = ^ In other words, with the Wiener filter 1105 The offset of the electrostatic deflection effect and electromagnetic deflection effect of the term related to the energy range of the secondary electron line will be eliminated, and because the secondary electron line will pass the Wiener filter toward the optical axis X, The right side, that is, the direction away from the optical axis X is only deviated by the angle ^, so the color difference caused by the Wiener filter 1105 can be ignored. Fig. 23 is a detailed configuration diagram of a fifth embodiment of the present invention. In the figure, the primary electron beam 1102 released by the electron beam source lioi is bundled by the condenser lens 1120 to cover the opening of the opening plate 1121. Once ^ The sub-line 1102 passes through the opening plate 1122 with a large number of openings before proceeding to the opening plate 1121, thereby becoming a multi-wavelength paper with a desired number of beams. The paper size applies the Chinese National Standard (Uh) A4 specification ( 21〇x 297 public love -------------------- Order --------- (Please read the precautions on the back before filling this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 312766 539845 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Invention Description (85) beam. After the multi-beamed primary electronic wire 1102 passes through the opening plate η], borrow The reduction lenses 1 123 and 1124 reduce the beam size Δ to move the beam from the fine J and form a small silk image 1122, and then enter the Wiener filter 1105. At this time, one electron

The formation angle between the line 1102 and the optical axis X is A7. The primary electron beam 1102 is bent to an angle α by the Wiener waver 1105 and travels along the optical axis X perpendicular to the sample ι8, and then is irradiated with the sample after being reduced by the lens 1125 and the symmetrical electrode 1126 1108. In order to scan through the primary electron line 1102 from the Wiener filter 1105 in a direction perpendicular to the arrangement direction of the opening of the opening plate 1122 (in the fourth figure, it is perpendicular to the paper surface) Sample 1108 was arranged along the optical path of the primary electron line 1102 with scanning electrodes 1127 and U28. In addition, in order to obstruct the direction of travel of the primary electron line 1102 from the normal travel direction when obscured, It travels along the optical path 1129, but is provided with a blind deflector 11 3 0, 11 3 1. Sample 1108 emits a secondary electron beam mi from each place irradiated with a plurality of thin beams constituting a primary electron beam 1102. The released multi-beam secondary electron line 1111 is separated from the primary electron line by the Wiener filter J J05 and enlarged by the imaging electron optics 1132, n33, and passes through the opening corresponding to the opening plate 1122. The opened opening plate 113 4 ′ is incident on the multi-detector 11 3 5. Here, the opening plate 11 2 2 and the opening plate 1134 rotate 90 ° around the periphery of the optical axis. Illustration. At this time, due to the chromatic aberration of the Wiener filter 11 005, problems will occur in the primary and secondary electron beams. However, the chromatic aberration that occurs in the secondary optical system can be expanded to form a multi-beam complex beam. ^ -------- ^ --------- line (please read the precautions on the back before filling this page) This paper size applies to Chinese National Standard (CNS) A4 Specifications (210 x 297 meals) 85 312766 V. Description of the invention (%) Low impact. :-On the side, in order to remove the color line 1102 of the Wiener filter 1105, the "响 + &-human electronic style shirt ringing", in Figure 23, is the static bias of Wiener's extinguishing magnetism. The effects of centroid, wave llf, and electromagnetic deflection cause the primary electron lines to deviate toward each other t, and the angle and direction of the static deflection effect toward the primary electron line and the secondary effect cause secondary electrons to deviate from A. The predetermined relationship is maintained between the angles of the line deviations. _ This 'released by the electron beam source 11〇1 and travels obliquely on the optical axis μ—under: the sub-line 1102 will be directed to the left related to the optical axis χ', that is, the direction close to the optical vehicle = is biased toward a certain Angle, and at the same time, you can ignore ... the impact of the energy range of the sub-line 1102. In particular, the Wiener Wavelet 1105 uses the electrostatic two-way action of the electrode ⑽ to bias the primary electron line Π02 like the right side toward the angle α, that is, away from the optical axis, and the magnetism of the magnet 1107 The deflection action is deviated to the left by a 2α angle, that is, deviated in a direction close to the optical axis. As a result, the entire primary electron line 1102 incident on the Wiener filter will have an angle of = square deviation. At this time, the influence of the energy range of the primary electron line 1102 can be ignored. Specifically, it can be Eliminate the chromatic aberration caused by the expansion of the energy range of the primary electron line 1102. In mathematical terms, that is, when the energy of the light beam incident on the secondary electron line of the Wiener filter 110 is set to V0, The primary electron beam with energy that is only △ smaller than ν than V, is deflected by the electrode 1106 to the following angle a (l-AV / Vo) = 5 This value is more to the right because (5 is large ', and also That is, it is biased to the direction far away from the optical axis X and has an energy source that is smaller than Vo by only △ V. The paper size is suitable for financial standards (CN5A4 specification ⑵ G χ 297 public hair 539845. V. Description of the invention (87) The magnet 1107 is deflected to the following angle 2 α (1-Δ V / V〇) · 172- θ This value is larger than 2α, so it is more to the left, that is, to the direction close to the optical axis X, so both The angular difference becomes θ = 2α (1-Δ V / V〇) -1/2. Α (l-AV / V〇) -ι because the value of AV and Vo is extremely small So the first approximation is (1-Δ V / Vo) '1/2 = (1 + Λ V / 2 Vo) and the result becomes θ-δ ~ 2 α (1-Δ V / 2 Vo)-a (l-AV / V〇) = a In this way, when the primary electron beam 11102 is deflected by the Wiener filter π05 toward the optical axis X only by the angle ", α can ignore the energy possessed by the primary electron beam. Range, so the chromatic aberration caused by the Wiener filter 1105 can be removed. In addition, the chromatic aberration generated in the secondary optical system is arranged in a row with the complex light beams constituting the primary electron line 11 02 and filtered by the Wiener Deviations in the alignment of these beams towards the right-angle direction of the beam will be generated in a direction orthogonal to the alignment direction of the beams, so there will not be an increase in overlapping images between multiple beams due to chromatic aberration. The electronic wire device printed by the cooperative, illustrated in FIGS. 22 and 23, can be applied to defect inspection devices; calibration accuracy measurement devices; line width measurement devices, high time resolution energy potential comparison measurement devices; #pit inspection devices; frequency Various devices, such as flash observer SEM ti. &Amp; The line device is used for the wafer evaluation in the advanced manufacturing process, and can also be used for the inspection process (G) in the device manufacturing method described in (a) and (b) of Figures 3 and 4. σ uses the descriptions related to (a), (b) of Figures 3 and 4,

HZZ55 539845 A7 V. Description of Invention (88) Therefore, its description is omitted here. The fifth embodiment of the present invention has been described above, but the present invention is not limited to this embodiment. For example, in order to irradiate different positions of the sample 1 〇 08 at the same time, a plurality of electron beam irradiation and detectors composed of an electron beam source, a primary optical system, a secondary optical system, and a detector may be provided, and the electrons from the plurality may be provided. A plurality of primary electron beams of the line source irradiate the sample, and finally a plurality of secondary electron beams released from the sample are received by a plurality of detectors. This significantly reduces the time required for inspection or measurement. The embodiment related to the driving of the object-seat-mirror (sixth embodiment, the sixth embodiment of the present invention is related to the fact that ... Micron line width pattern defect inspection, CD measurement, calibration accuracy measurement, high time resolution energy potential measurement, and other evaluation of electronic wire devices; and a device manufacturing method using the device. Scanning results of electronic wires are used to form the electronic wires with high accuracy. When evaluating the pattern on the surface of a sample such as a semiconductor wafer, it is necessary to consider the change in the height of the sample. This is because the distance between the pattern on the surface of the sample and the object lens that allows electron lines to be focused on the pattern by the height of the sample. There will be changes, which will cause the focus conditions to be degraded due to shifts in resolution, which will prevent accurate evaluation. To solve this problem, a commonly known electronic wire device is used. This device inclines light onto the sample surface and uses This reflected light is used to measure the sample survivability, and the measurement result is returned to the electron optical system used to focus the electron beams on the sample. Components supplied to the electronic optics system This paper applies the Zhongguanquan (standard) (CNS) A4 specification on this paper standard. Μ -------------- (Please read the precautions on the back before filling (This page) " 88 " 539845 A7 B7 V. The current and electric current of the invention description (89) for the focus calibration of the electro-optical system. However, in the method of incident light into the sample in an inclined manner, the Between the sample surface and the lower surface of the electronic optics system, an insulator is used as the main learning component. The insulation system is used to reflect incident light. Therefore, the distance between the sample surface and the lower surface of the electronic optics system must be larger than the required interval. In this way, it is impossible to ignore the aberrations and other problems of the electronic optics. However, at this stage, the device that can simultaneously solve the problems of the electrical + optical system H-point calibration and the aberrations of the sub-optical system. In addition, in electronic In the implementation of the focus calibration of the optical system, in addition to the distance from the electron optics # and the bottom, the spatial electrification effect of the electron line must also be taken into account. Therefore, if the parameters related to the electron optics system are not measured by electron optics, will Errors are prone to occur. In addition, when adjusting the excitation current 'of the magnetic lens included in the electro-optical system for focus calibration, the focal point of the electro-optical system must be stabilized after setting the excitation current to a predetermined value. The time of the distance, that is, the setting time is adjusted to be longer, therefore, a problem that the focusing cannot be performed at a high speed occurs. In addition, when the excitation voltage of the electrostatic lens is changed to perform the focusing of the electro-optical system, it must be applied to The high voltage of the electrostatic lens changes, so there is also a problem that the setting time becomes long. In order to solve the above-mentioned problem, the sixth embodiment of the present invention provides an electro-optic type that can perform focus calibration of the electro-optical system in a short time. And a manufacturing method of the device using the same. Fig. 24 is a schematic configuration diagram of a sixth embodiment of the present invention. In the same picture, the electronic wire source 1201 is equipped with an anode 1202, and the one-time electric paper ruler 1_ (CNS) A4 specification ⑵Q χ tear public love-89 539845 printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Λ7 DESCRIPTION OF THE INVENTION (90) The strand is accelerated by the anode 1202, and passes through the axis-aligning deflectors, 1204 and the non-spot correction lens 1205 through the small hole M of the opening plate 1206. Once through the opening plate 1206 The electron beams are bundled by the condenser lens 1208, pass through the deflectors 1209, 1210, and pass through the Wiener filter 1211, and then, for example, a rectangular complex circuit pattern formed on the surface of the sample 1214 placed on the table S An image is formed on one of the electrodes. The axisymmetric electrode 1213 is arranged with almost no space between the sample 1214. ~ The table s can be moved in a second direction that is perpendicular to the direction in which the primary electron line is deflected. The loop pattern scan is performed by the primary electron beam deflection and the movement of the table S. The scanning result of one electron beam enables the secondary electron beam released by a loop pattern on the sample 1214 to be aimed at the objective lens. 1212 Electric Place The coupling is accelerated, and it is deviated from the optical axis l by the bias of the Wiener filter 1211, and is separated from the primary electron beam. In this way, the secondary electron beam is detected by the secondary electron beam detection unit 1085. The secondary electron wire detection unit 1215 outputs an electric signal showing the intensity of the incident secondary electron wire. This electric signal is amplified by its corresponding magnifier (not shown) and is subjected to image processing. In order to reduce the primary electron beams by the condenser lens 1208, a required voltage is applied to each electrode constituting the condenser lens 1208 by the first power source 1217. On the other hand, 'the objective lens 1212 is a unit electric lens, and in order to separate the primary electron beams, Focused on the surface of sample 1214, a positive south voltage v0 Watt from the second power source 1218 is applied to the central electrode of the objective lens ι212, and a third power source is applied to the upper electrode and the lower electrode of the objective lens 1212. 1219 small voltage earth △ v0 watt. Electronic wire source 1201; anode n02; paper size applies Chinese National Standard (CNS) A4 specification ⑵G x 297 public love 312766 ------------ ----— Order --------- (Please read the notes on the back first (Fill in this page again) 539845 91 A7 V. Description of the invention (91) Axis alignment deflectors 1203, 1204; non-point correction lens 1205, opening plate 1206 'condenser lens 1208; deflectors 1209, 121〇; Wiener filtering 1212, the objective lens 1212; the axisymmetric electrode 1213; and the secondary electron beam detection portion 1215 'are housed in a lens barrel 1216 of an appropriate size to constitute an electron beam scanning. Detection system 1220. In addition, the initial focus of the electronic line scan / detection system is 12 =, which is performed by fixing the voltage ± Δν〇 to, for example, _ι0 Watt 'and changing the positive voltage Vo. As described above, the electron line scanning and detection system is 122 °, which scans one of the wafer patterns on the sample 1214. The scanning result is the detection of the secondary electron line released by the sample 12U, and the rotation is shown to indicate its intensity. Electrical signal. In fact, since a plurality of wafer patterns are formed on the surface of the sample 1214, the electronic line scan and detection system 122G has the same structure as the electronic line scan. The detection system (not shown) is the same as the electronic line scan and detection system 122. The “parallel form” is arranged such that the distance between them is an integer multiple of the wafer specification on the sample 1214. Furthermore, the electronic line scanning and detection system 122 will be described. The electrical signal output by the secondary electron detection unit m5 is converted into binary information, and the binary information is converted into image data. As a result, image data of a circuit pattern formed on the surface of the sample 1214 can be obtained, and the obtained image data is stored = an appropriate memory device and compared with a reference circuit pattern. If this is the case, a defect of the circuit pattern 形成 formed on the sample 1214 can be detected. The reference circuit pattern used for comparison with an image representing a certain one-way pattern on the sample 1214 can be used. Various circuits can be used. For example, image data from CAD data can be used, and CAD data is fresh ( CNS) A4 Specifications ⑵q 312766 Order --------- ^ (Please read the notes on the back before filling in this page) 539845 V. Description of the invention (92) Used to make the image data scan Circuit pattern. In the electronic wire device shown in FIG. 24, the value of the “±±.” Applied to the upper electrode and the lower electrode of the pair is determined under the control of a pu device (not shown). His Majesty decided as follows. First, the

On any pattern on the surface of Tongan L mouth, read from the pattern data t. The edge of the pattern parallel to the first direction deviated; and the position of the edge of the pattern parallel to the second direction of the right angle of the first direction. Next, the deflectors 1209, 121〇 and the Wiener waver 2m were used. Scan the pattern edge parallel to the first direction in the second direction, and the secondary electron line detection unit i2i5 takes out the electrical signal indicating the strength of the released secondary electron line, and measures the electrical signal. Increase (early: micron). Similarly, for the edges of the pattern parallel to the second direction, the deflectors ⑽, 121 () and Wiener waver 1211 ′ are used to scan in the above-mentioned direction by the primary electron beam, and the secondary electrons The wire detection unit 1215 takes out the electric signal 'indicating the strength of the released secondary electron wire and measures the increase of the electric signal. This direction operation is performed every time the value of the voltage ± Avo is changed. In this way, the tables A and B shown in (a) of FIG. 25 can be obtained. The above "electrical signal increase" means that, as shown in the 25th (1?), The voltage ± Λ Vo is fixed at a certain value, and the scanning in the second direction is the same as the first! The maximum value of the electrical signal measured when the pattern edges are parallel to each other! Scanning distance in 2nd direction (unit: micrometer) required when 2% changes to 88%. Size i® of this paper is Guan Jiaxian (CNS) A4 (⑵: 297 mm) 312766

V. Description of the invention (93) Printed by the Consumer Affairs Cooperative of the Ministry of Economic Affairs and Intellectual Property Co., Ltd. In (a) of Figure 25, Table A shows that the voltage Avo is -AVoa), which is the highest increase. The same 'Table B shows that the voltage Δ v0 is + Δ Vo (y), which is the minimum value, that is, the increase is the highest. Therefore, the focus condition of the object through 1212, that is, the value of the electric soil Avo applied to the upper electrode and the lower electrode, is preferably set to {−Δ Vo (x) + Δ Vo (y)} / 2. Beiji Shang 'voltage soil Avo can only change between 0 and 20 watts, so the setting of the objective lens 1212 can be performed at a high speed of 10 microseconds. For the sake of taking Table A and Table in Figure 25 (a) B, it only takes 15 micron seconds. In addition, when measuring the curves A and B, it is not necessary to perform so many kinds of measurements. As shown in FIG. 25, the value of ± Δν〇 is preferably set to -AVod), + Λν〇 (2), + Δν〇 (3), to determine the increase, and use the hyperbolic approximation to find the table A, B, or the minimum value of the rise + ΔV0 (y), -AVcKx). In this case, the measurement can be performed at about 45 microseconds. A and B of FIG. 25 (a) show the shape of a hyperbola. Set the increase to p (mm) and apply the voltage to the objective lens Δν. When set to q (watts), the curves a and B are expressed as (p2 / a2)-(q-c) 2 / b2 with a, b, and c as constants, and three q values qi, And the corresponding p-value η and P3 are substituted into the above formula to obtain the following three formulas. (Pi2 / a2)-(qi-c) 2 / b2 = 1 (ι) (p22 / a2)-(q2-c) 2 / b2 = 1 (2) (P32 / a2)-(q3-c) 2 / b2 = 1 (3) Calculate a, b, and c values from the above formulas (1) to (3). When q%, it is the Guan Jiaxian (CNS) A4 specification (210x 297) 312766 Μ -------- Order --------- line (please read the notes on the back before filling this page) V. Description of the invention (94) The minimum value. That is, you can seduce three. ⑴, Similarly, as shown in Table A of (a) in Figure 25, ^ FI ^ ^ ^ ^ β, generally, when the pattern edge is swept in the first direction, and when scanned in the direction, the increase will be The difference. At this time, non-point correction must be performed. For example, the voltage applied to the 8-point non-point correction lens 1205 can be adjusted manually so that it is " ^ ^ _ in the first direction and the second direction at right angles to it. When the pattern edge is scanned, the "^" increase of the turtle gas signal from the electronic wire detection section 1215 can be made smaller. As mentioned above, the Lei Zaihao Dede, and the 1220 electronic line scanning and detection system have the same structure of electronic line scanning and detection /, a little U structure ... ”Λ, (without picture), and the electronic Line scan · The form of the 1220 sub-column of the test system is equipped with Λ1Λ U αα Β η so that the distance between each other is an integer multiple of the Japanese yen rule on the sample 1214 ^ ... It is necessary to perform a focus pair a un 1214 tM ^ to enable the one-person electronic wire to focus on the Shike i 2 14 because this type of electrical transmission can be performed at about the same time, so the estimated time is a minimum value. Because this method uses an electro-optical device instead of an optical sensor to determine the focusing conditions, it has the advantage that the focusing conditions can still be obtained when the sample is charged. Follow the instructions above for the electronic wire After scanning the focus of the detection system, move to the program for evaluation of sample 1214.… The defect detection device of the sixth embodiment of the present invention will be applied for the wrong reason. Refer to Figure 3 and As shown in (a) and (b) of Figure 4 The inspection process (G) of σ 広 r for the device manufacturing, even semiconductor devices with fine patterns can be inspected with a good yield. Therefore, all inspections can be done to increase the yield of j____ and prevent the lack of long dimensions. Applicable to Chinese national standard ⑵0 x 297 public hair 7 、 94 312766 Please read the precautions of the back S before filling in this page

I 539845 A7 V. Description of the invention (Shipping of 95 trapped products. As for this point, the descriptions related to (a) and (b) in Figure 3 and Figure 4 are used, so the description is omitted here.) Embodiment related to a vibration device (seventh embodiment) A seventh embodiment of the present invention relates to a procedure for performing at least one of processing, manufacturing, observation, and inspection of a substance by irradiating an electron beam at a target position of the substance. The electronic wire device in more detail relates to a semiconductor manufacturing process that includes the following processes: an electronic wire device that utilizes an electronic wire device that reduces unnecessary mechanical vibrations generated by an electronic wire positioning mechanical structure, and its vibration control A method and a process for manufacturing a semiconductor device using the device, and at least one of a process of observation and inspection. Generally, a method of observing a fine structure of a substance using an electron beam includes inspecting a pattern defect formed on a wafer. Inspection equipment, or scanning electron microscope (SEM), etc., but the observation can be resolved to the heart to Shuta +, so the vibration from the outside must be fully removed Observe. In addition, the device that uses the electron beam for exposure is biased towards the electron beam 1 and irradiates to the target position, and a vibration isolation device that can sufficiently remove external vibrations is used. At the same time, in order to minimize the lens barrel part | The sloshing caused by the mechanical resonance caused by the structure of the knife must be improved in rigidity. The rigidity of the Feng Lingyao structure is difficult to achieve due to the physical constraints of the electronic optics system. Therefore, the lens barrel part is small | the thickness of the knife is increased, the size is increased to achieve the purpose of increasing rigidity, but the use of this way to increase the rigidity of the "weight of the device" shape restrictions, the size of the vibration isolation table and other design Constraints on freedom and various economic disadvantages. In the seventh embodiment of the present invention, in view of the matters above | ____, we provide a paper size applicable to the Chinese National Standard (CNS) A4 specification ⑵G x 297 public meal Each 3127 ^ page order line 539845 V. Description of invention (w) Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs

In addition to the 250 #m image, an overlapping image of the electron beam source i30u is also formed on the opening plate 1307 to meet the Keller lighting conditions. An image of, for example, 100 # m x 50 # m is formed on the wafer 305 by the objective lens 1308, and the area is illuminated. The wafer 1305 is arranged in a sample chamber which can be evacuated to a vacuum state (not shown), and is arranged on a table 13 04 which can be moved in the χ-γ horizontal plane. Here, the relationship between the A block, the B block, and the χγζ orthogonal coordinate system is shown in Fig. 27 (a). The χ-γ plane has a wafer surface, and the redundant axis is slightly parallel to the optical axis of the camera projection optical system. By moving the table 1304 in the χ-γ horizontal plane while the wafer 1305 is mounted, the inspection surface of the wafer 1305 can be sequentially scanned by an electronic line. On the other hand, the work table 13 04 is placed on the fixed table 1330. The imaging projection optical system disposed on the upper part of the A block includes an intermediate electrostatic lens 1309, a projection electrostatic lens 1311, and an aperture 1310 disposed between the lenses. By the irradiation of the primary electron beam, the secondary electron beam, the reflected electron beam and the scattered electron beam released from the wafer 1305 are at a certain magnification (for example, 2000 to 300) by the camera projection optical system. O) Enlarged projection is performed and imaged under the multi-channel plate 1321 described later. The imaging device disposed at the uppermost part of the A block includes a multi-channel board 1321 'a screen 1322, a relay lens 1323, and an imaging section 1324. The multi-channel plate 1321 has a large number of channels in the plate. When the secondary electron lines imaged through the electrostatic lenses 301 and 1311 pass through the channels, more electron lines will be generated. That is, the secondary electron beam can be enlarged. The fluorescent screen 1 322 emits fluorescent light that can match the intensity of the secondary electron rays by irradiating the amplified secondary electron rays. That is, the intensity of the secondary electron beam is converted into the intensity of light. Medium 539845 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the Invention (98) The relay lens 1323 is configured to direct the fluorescent light to the camera 1324. The imaging unit 1324 is composed of a plurality of CCD imaging elements that convert light guided by the relay lens 1323 into electrical signals. To improve the S / N ratio of the detected signal, it is best to use a so-called TDI (Time Delay Integral) detector. In addition, with the irradiation of the primary electron beam, in addition to the secondary electron beam, scattered electron beams and reflected electron beams are generated, but are collectively referred to herein as secondary electron beams. On the other hand, the lens barrel 1346 formed by the mechanical structures of the A block and the B block connected thereto generally has one or more natural vibration modes. The resonance frequency and resonance direction of each natural vibration mode are determined by the shape, mass distribution, size, and configuration of the internal machinery. For example, as shown in Fig. 27 ', the lens barrel 1346 has at least one mode 1 of natural vibration 1388. In this mode 1, the lens barrel 1346 will shake at a frequency of 150 Hz along the slightly γ direction. An example of the transfer function of the lens barrel in this case is not shown in FIG. In Fig. 29, the horizontal axis is the frequency and the vertical axis is the logarithm of the vibration amplitude A. According to this transfer function, a resonance frequency of 150 Hz has a gain of 30 dB (approximately 30 times). Therefore, even if a small amount of vibration is added from the outside, as long as the vibration contains a frequency component near 15 Hz, the frequency component is amplified about 30 times in this example to vibrate the lens barrel. As a result, harmful phenomena such as blurring of the camera will result in the previous technology. "To prevent this phenomenon, the entire lens barrel is placed on a vibration isolator" to remove external vibrations and / or re-examine the thickness and structure of the lens barrel. 'Perform large-scale processing such as reducing the resonance magnification. For Duzhou _ (⑽Α4 ^^ χ 297 公 爱) ir --------- (Please read the precautions on the back first and save this page to fill out this page) 312766 98 .1 .1 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 539845 A7 ^ _ β7 • ^ —. V. Description of Invention (99) Policy. In order to avoid this problem, in the seventh embodiment of the present invention, as shown in FIG. 27 (c), an actuator 1325 is provided at the base of the A block, which can apply pressure and vibration 1390 to the lens barrel to suppress vibration 1388. The actuator 1325 is electrically connected to the damping circuit 321 as shown in FIG. 3. The schematic configuration of the actuator 1325 and the vibration damping circuit 1327 is shown in FIG. 28. As shown in the figure, the actuator 1325 includes: a piezoelectric element 1350 formed by an electromotive element 1351 having a piezoelectric effect sandwiched between electrodes 1352 & and n52b; and in order to support the piezoelectric element by the electrode 135 2b side 1350 and a support base 1354 fixed on a fixed base 1330. The piezoelectric element 1350 is placed between the A block of the mirror 1346 and the support base 1354. The electrode 1352a 'is connected to the outer wall of the A block, and the electrode 1352b is connected to the support base 13 54. With this, the piezoelectric element 1350 can receive positive pressure when the lens barrel 1346 comes forward by vibrating 13 88 back and forth, and receive negative pressure when the lens barrel 13 46 goes away. The piezoelectric element 135 is set at an effective position to suppress the vibration 1388 of the lens barrel 1346. For example, the direction of the vibration 1388 is preferably arranged in the form of a positive father to the electrodes 1352 & and 1352b. The vibration detection circuit 13 27 is composed of a variable inductance 1358 and a resistance 13 56 connected in parallel between the two electrodes 1352a and 1352b of the piezoelectric element 1350. Since the variable inductor 1358 has an inductance [, the resistor 1356 has a resistance value rd, and the piezoelectric element 1350 has an electrical capacity c, the piezoelectric element 1350 and the vibration damping circuit 1327 connected in series will be the same as those shown in reference number 1360. The in-line resonance circuit is equivalent. The resonance frequency fQ 'of the in-line resonance circuit is in accordance with the Chinese national standard (CNS) A4 specification ⑵G χ 297g g 312766 at this paper scale ^ --------- ^ (Please read the notes on the back before filling (This page) 539845 V. Description of the invention (101) The digital image data of the electrical signal from the camera section 1324, which is the secondary electron line image of the wafer 1305, is stored. In addition, on the hard disk, there is a reference image memory 1313, which can store reference image data of a non-defective wafer in advance. In addition, on the hard disk, a control program for controlling the entire electronic wire inspection device and a defect detection program 1319 are stored. In addition to controlling the movement in the χγ plane of the table 130, this defect detection program 1319 also has calculation processing such as addition of digital image data from the imaging unit 1324 during this period, and is based on The data obtained from this result reconstructs the function of the secondary electron beam image on the memory area 13 2 0. The defect detection program 1319 reads the secondary electron beam image formation data formed on the memory area 1320, and automatically detects defects on the wafer 1305 based on the image data according to a predetermined calculation function. Employees of the Intellectual Property Office of the Ministry of Economic Affairs printed a primary electronic wire through a rectangular opening 1302a, a 4-pole lens 13 02b, an E X B deflector 1306 and an objective lens 308, and irradiated the surface of the mounted wafer 1305. As described above, on the wafer 1305, the inspected area such as // m X 5 0 // m is illuminated to release secondary electron lines. This secondary electron line is enlarged and projected below the multi-channel plate 1321 by the intermediate electrostatic lens 1309 and the projection electrostatic lens 1311, and the image is captured by the imaging unit 1324 to obtain the secondary electrons in the projection area on the wafer 1305. Line image. The driving table 1304 sequentially moves the wafer 1 305 in the horizontal plane of χ to γ according to a predetermined width. By performing the above steps, an entire image of the inspection surface can be obtained. Χ When imaging the enlarged secondary electron line image, if an external force containing a vibration component with a resonance frequency f0 (] 50Hz) is applied to the lens barrel 1346, the Chinese paper standard (CNS) A4 is applied to this paper (210 x 297 mm) ~~~ '^ 312766 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 539845 A7 ---_- 1 1 ---- B7__ 5. Description of the invention (102) The lens barrel 1346 will be used The resonance magnification set by the transfer function (30d⑴ magnifies the vibration component to perform fixed vibration. The vibration 1388 applies positive and negative pressure to the piezoelectric element 1350. The piezoelectric element 1350 replaces the vibration energy of the lens barrel 1346 with electricity After the energy is output, between the two electrodes 1352a and 1352b of the piezoelectric element 50, the inductance 1358 (L) and the resistance 1356 (Rd) are connected in line to form a resonance circuit. Therefore, in the resonance frequency, the voltage The capacitive resistance of the electrical element 1350 and the inductive resistance L of the inductor 1358 will be cancelled, and the resistance of the resonance circuit will actually only become the resistance 2056 (Rd). Therefore, at resonance, the piezoelectric element 1350 The output electrical energy is almost entirely resistive1 Consumed by 356 (RD). As the external force applied to the piezoelectric element 1350 by the lens barrel 1346 is generally 'generated by the piezoelectric element 1350, and the vibration 13 88 generated by mechanical resonance is cancelled, and the resonance can be reduced. Magnification. As the secondary electron beam is enlarged and imaged, the image shake due to vibration will become more severe. This embodiment can prevent image blur caused by this kind of shake. As shown in Figure 30, it is used as a machine The resonance component of the transfer function 1382 (equivalent to FIG. 29) of the lens barrel 1346 of the structural body is cancelled by the resonance component of the resonance circuit 1360 having a value of 1384 in the electric line frequency characteristic. It becomes a total transfer function 1386 with a low resonance magnification. As described above, once a good secondary electron line image without image blur is obtained, the electron line inspection device 1301 of this embodiment can perform inspection from this image. The processing of the defect of the crystal IIII 13 " 05. The defect inspection process can use the so-called pattern matching method. This method is based on obtaining the reference image memory Γ -------- order ----- ---- (Please read the back first Please fill in this page if you have no intentions.) This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 Public Love i TO2 ΤΓ 2756 539845. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economy. 3) After the reference image read by the unit 1313 matches the actually detected secondary electron beam image, it calculates a distance value indicating the similarity between the two. If the distance value is smaller than the predetermined threshold value, it is determined to be similar. High degree and "no defects". In contrast, if the distance exceeds the predetermined threshold, 断 J indicates that the similarity is low and there are “defects”. If it is determined to be defective, a warning can be displayed to the operator. At this time, the secondary electron beam diagram 胄 i3i7 can also be displayed on the display section of the CRT1315. In addition, a pattern matching method may be used in a partial region of each secondary electron beam image. In addition to the pattern matching method, there are defect inspection methods as shown in Figs. 31 (a) to ⑷. Figure 31 (a) shows the first! An image 1331 of the detected wafers and an image 1332 of the other wafers detected. When it is judged that the third wafer image detected is the same as or similar to the first image 1331, it can be judged that the 1333 portion of the second wafer image 1332 is defective, and a defective portion can be detected. Example 31 (b) shows an example of measuring the line width of a pattern formed on a wafer. The actual secondary electron line intensity signal when scanning the actual pattern 1334 on the wafer in the direction of 1335 is 13 36. This signal can continuously widen the portion that exceeds the preset threshold level 1337 continuously! 338, regarded as the line width measurement of the pattern 334. When the measured line width is not within the specified range, the pattern is judged to be defective.

In the 31st (c), an example of measuring the potential contrast of a pattern formed on a wafer is shown. In the structure shown in FIG. 26, an axis-symmetric electrode 1339 is provided above the wafer 305, and the potential of the wafer potential OV can be supplied to -10 volts, for example. At this time, the -2V equipotential surface is shaped as shown in 1340. Here, the patterns 1341 and 1342 formed on the wafer are set to -4V and 0V, respectively. ^ ^ --------- line (please read the note on the back before filling this page) Applicable to the national cap (CNS) A4 Yige (210 X 297 Kg ¥ 103 312766 539845 Employees' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs printed A7 V. Potential of invention description (104). At this time, the The secondary electron beam, on the _2v equipotential surface 1340, has an upward velocity equivalent to 2eV of the motion energy source, so it can surpass the potential barrier 1340, as shown in the execution channel 1343, and is released by the electrode 1339, and Detected by the detector. On the other hand, the secondary electron line released from the pattern 1342 cannot be exceeded by the potential barrier of -2V, and if it does not follow the path 1344, it will be driven back to the wafer surface, so it cannot be Detection. Therefore, the detection image of pattern 1341 will become bright, and the detection image of pattern 1342 will become dark. Therefore, a potential contrast can be obtained. The brightness and potential of the detected image can be corrected in advance, and can be detected. The image is used to measure the pattern potential. At the same time, the potential distribution can be used to evaluate the pattern. Defect section. As described above, by performing the above-mentioned various measurements on a good electron secondary electron line image with no image blur obtained using the seventh embodiment of the present invention, a more accurate defect inspection can be achieved. The above-mentioned electronic wire inspection apparatus according to the seventh embodiment of the present invention is used when the wafer inspection process (G) is used in the apparatus manufacturing method described using FIGS. 3 and 4 (a) and (b). It can prevent the deterioration of the detected image due to the vibration of the mechanical structure, so it can achieve high-efficiency and high-precision inspection, and prevent the shipment of defective products. In this regard, it is used in accordance with Figure 3 and 4 (a) and 4 (b), the description is omitted here. In addition, the "seventh embodiment of the present invention is not limited to the form described above, and can be performed within the scope of the gist of the present invention. Any appropriate change. For example, the mechanical resonance frequency and mode are not limited to one, and usually there are multiple. At this time, you can respond by setting the necessary number at each important position of the lens barrel. For example, Figure 27 (B) Mechanical structure of the illustrated n -J n n n n · ϋ ϋ n u * n n n n ϋ ϋ a _ «ϋ · ϋ n 1 n 1« n V · (Read Notes on the back and then fill the page)

539845 V. Description of the invention (105) When block A has both vibration in the gamma direction 1388 and vibration in the parent direction, another actuator may be provided to offset the vibration in the X direction. In addition, when there are independent fixed vibrations in Blocks B and D, actuators can also be installed in these blocks. The vibration damping circuit 1327 does not need to be equivalent to the in-line resonance circuit 136. When the mechanical natural vibration has a plurality of resonance frequencies in the same vibration direction, the electrical frequency characteristics of the circuit can be used to match the resonance frequency characteristics of the circuit. Confrontation. In addition to the lens barrel, the position of the actuator can also be applied to the device required for correct positioning of the beam position, for example, χ-γ stage 1304, or optical devices of various optical instruments. Although in the example, the semiconductor wafer 1305 is used as the test sample of the electronic wire inspection device according to the seventh embodiment, the test sample is not limited to the semiconductor wafer, and the responsibility can be arbitrarily selected and can be detected by the electronic wire. Defective object. For example, a mask for forming a pattern for wafer exposure may be formed as the inspection target. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs In addition, the seventh embodiment can be applied to an entire electronic wire application device that irradiates a light beam at a target position of a substance. At this time, its scope of application can also be extended to: in addition to the inspection of the substance, it can also perform one of the processing, manufacturing and observation of the device. Of course, the concept of the substance referred to here includes, in addition to the wafer or the above-mentioned mask, any object capable of being inspected, processed, manufactured, and observed by a light beam. Similarly, the device manufacturing method is applicable not only to the inspection during the manufacturing process of the semiconductor device, but also to the manufacturing process of the semiconductor device using a light beam. This paper size is applicable to the national standard (CNS) A4 specification (210x297 cm) 105 312766 standing, invention description (107) :; circle two = Γ electrostatic chuck, it can only occur to clamp the surrounding ..., / Clamping of the central part I. Problem of holding wafers. In order to solve the above-mentioned problems, an electrostatic chuck for a decelerated electric field objective lens is provided. The side and the inner surface of the wafer are clamped toward the chuck side by an insulating film. At the same time, a method for manufacturing a device is also provided. The electrostatic chuck or the combination of a wafer and an electrostatic chuck is used for wafer evaluation during the manufacturing process. Fig. 32 is a plan view of the electrostatic chuck Η⑺ in the eighth embodiment of the present invention, and is a view observed after the wafer is removed and the electrode plate 14i2 is developed. Fig. 33 is a schematic cross-sectional view in the vertical direction along the line µ_µ of the electrostatic chuck of Fig. 32, and shows a state where a wafer is placed without a voltage applied. As shown in FIG. 33, the electrostatic chuck 1410 has a base layer structure formed of a substrate 1405, an electrode plate 1412, and an insulating layer 1404. The electrode plate 1412 contains ... The electrode 1401 and the second electrode 1402. The first electrode 1401 and the second electrode 1402 are separated from each other to individually apply voltage. They are printed and formed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics and Film to enable them to move at high speed in a magnetic field without eddy currents. . The first electrode 1401 is formed by the central portion and the peripheral portion of the circular electrode plate 1412 on the plane, and the second electrode 1402 is formed by the remaining horseshoe-shaped peripheral portion of the electrode plate. An insulating layer 1404 is disposed above the electrode plate 1412. The insulating layer 1404 is formed of a sapphire substrate having a thickness of lnim. The single crystal of this sapphire-based alumina does not have the pores common to alumina ceramics, so the dielectric breakdown voltage is large. Example This paper size applies to Chinese national standard (CNS > A4 size (210x 297 cm) 107 312766 539845

V. Description of the invention (109) When the printing force of the Intellectual Property Office of the Ministry of Economic Affairs prints the force, apply -㈣ to the j-th electrode and the second electrode. This can prevent the insulator from being damaged by applying a voltage and preventing excessive voltage from being applied to the insulating layer 2104. Fig. 35 shows an electronic wire device provided with the above-mentioned electrostatic home disk. The electronic wire released from the electronic wire source 1431 can be used to determine the opening of the opening plate (na) and the anode 1432 to remove unnecessary light beams. The condensing lens ㈣ ”is used to shrink the objective lens U43, and at the same time as the image is applied to the wafer, the wafer is advanced by the deflectors 1438 and 1442: * Released from Yueyuan 1403 The secondary electron beams are collected by the objective lens " 43, and then biased to the right by about% by the χβ separator 1442. Then, they are detected by the secondary electron beam detector 1440, and taken as: quasi: Γ In the electronic wire device shown, the symbol is axon soap: /, '1434 is a non-point correction device, 1436 is an opening plate, 1441 is a shield 1444 as an electrode. Μ and 34 are arranged below the wafer 1403. The electrostatic chuck as described. By using the eighth embodiment of the present invention in Figs. 3 and 4 (i), the inspection procedure of the manufacturing method of the device described in (b), that is, $ "Semiconductor wafers" can also be inspected at high yields: "No? All inspections can be performed to improve the product. At the same time, it can prevent the shipment of defective products. In this regard, the descriptions related to Figures 3 and 4 (a) are used, so the description is omitted here. In addition, the voltage applied to the electrostatic chuck The method of increasing and decreasing is not limited to the voltage shown in Figure 3434. For example, the voltage which can be changed exponentially as shown in Figure 34⑻ is also possible. In short, the mouth heat t _ ^^^ ___ Specifications (21Q Χ 297 public " /, ^ -------- t --------- ^ (Please read the phonetic notes on the back before filling out this page) 1 no UM.- r -S- \ A7 B7

539845 V. Description of the invention (110) The electricity a which can reach the voltage set by 在 in time, no matter what kind of voltage it is. An embodiment related to the __ ^ stage for placement (笫-^ state, the ninth embodiment of the present invention relates to: a device for irradiating an electron beam to a sample mounted on a xγ stage; and a defect inspection using the device A device or an exposure method; a device manufacturing method using these devices. A device for exposing a semiconductor wafer to an electron beam, exposing a semiconductor circuit pattern or the like on a sample surface, or inspecting a pattern formed on the sample surface, Or, for the device for ultra-precision machining of the sample by irradiating electron beams, a work table capable of accurately positioning the sample in a vacuum is often used. When a high-precision positioning is required for such a work table, it is often used by The hydrostatic bearing supports the structure of the table in a non-contact method. At this time, the system ^: a differential that can perform high-pressure gas exhaust is formed within the range of the hydrostatic bearing: the air mechanism maintains the degree of vacuum in the vacuum processing chamber to prevent An example of a prior art workbench that is supplied by the static M carrier and directly discharged to the vacuum processing chamber 1 is shown in Fig. 36. In the structure shown in the figure, the casing constituting the vacuum processing chamber C In the body i, the tip end portion of the lens barrel 1501, which is an electron beam device for generating an electron beam to irradiate the room material, is an electron beam irradiating portion 1502. The inside of the lens barrel is evacuated by a vacuum pipe 1510, and The processing chamber c is evacuated by the * vacuum pipe 1511. The electronic wire is irradiated with a sample 150 such as a wafer placed below the lens 1501 at the tip end 1502. The sample S is generally known The method is detachably held on the sample table 1504, and the sample table 1504 is installed on the movable part 方向 in the Y direction of χ "(hereinafter referred to as the table _. It can be 312766 in the γ direction -------- ------------- Order ----- !! #, (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs & Paper Scale Applicable standard (CNS) aTQ χ Norwegian public meal A7 539845 V. Description of the invention (Ul) 1505 is attached to the surface i5 06a opposite to the guide surface i506 of the x-direction movable part 1506 of the table 1503 (in Fig. 36) In [A], the left and right sides and the lower side) j. A plurality of static pressure bearings 1509 are provided, and the effect of the static pressure bearing can be matched with that of the guide surface. While maintaining a small gap between them, move in the γ direction (the left and right directions in [B] in the figure). In addition, a differential exhaust mechanism is provided around the static pressure bearing to prevent the high pressure supplied by the static pressure bearing. The gas leaks to the inside of the vacuum processing chamber c. This state is shown in Fig. 37. The hydrostatic bearing 1509 = double grooves 1518 and 1517 are formed around the Xie groove. Performs regular vacuum evacuation. With this structure, the movable unit 1505 in the Υ direction can be supported in a vacuum in a non-contact state and can move freely in the Υ direction. The double grooves 1518 and 1517 are attached to the installed machine. The surface of the static bearing of the moving part coffee is formed in such a manner as to surround the static god. As for the structure of the hydrostatic bearing, the general structure will be described in detail. The X-direction movable portion 1506 on which the Z-direction movable portion 1505 is placed on the line has a concave shape opened upward as shown in FIG. 36. The Z-direction movable portion 1506 is also provided with the same static repeat. Bearings and moving. 'Supported on the table in a non-contact manner, and can move freely in the χ direction. By moving the movable part 1550 in the X direction and the movable part in the X direction', the sample s can be moved to the tip of the lens barrel. 1502's horizontal square hat # ^ 1 罨 thousand lines are shot to the desired position, so that the electron beam can be irradiated to the desired position of the sample. When the working table combining the above-mentioned static pressure bearing and differential exhaust mechanism (工作 二 I ⑴ 312766 539845 A7) 5. Description of the invention (112) When the table moves, the guide surface 1506a or 1507a opposite the static pressure bearing 1509, will Move back and forth between the high-pressure gas environment of the hydrostatic bearing part and the vacuum environment in the processing chamber. At this time, the guide surface will repeat the following state: that is, 'the gas is absorbed under the condition of being exposed to the high-pressure gas environment, and the exposure The gas is released in a vacuum environment. Therefore, when the table is moved, the degree of vacuum in the processing chamber C may be deteriorated, so that the exposure, inspection or processing by the above-mentioned electron beams cannot be performed stably. In order to solve such a problem, the ninth embodiment of the present invention provides: an electronic wire device that can prevent a decrease in vacuum and stably perform processing such as inspection or processing performed by the electronic wire; It has a non-contact support mechanism operated by a hydrostatic bearing and a vacuum seal mechanism operated by a differential exhaust gas. Electronic wire device that generates a pressure difference between the support parts of the pressure bearing; Electronic wire device that can reduce the gas released from the surface of the part facing the static pressure bearing; Use the above electronic wire device to inspect the defect surface of the sample, or An exposure device that draws a pattern on the surface of a sample; a semiconductor manufacturing method for manufacturing a semiconductor device using the above-mentioned electronic wire device. Hereinafter, a ninth embodiment will be described with reference to the drawings. In the 38th figure, the movable portion 1505 in the Y direction of the table 1503 The upper part is provided with a partition plate 1514 which is extended toward the + Y direction and a Y direction (the left and right directions in FIG. 38 [B]) in a nearly horizontal manner, and the movable portion 1560 of the X direction (Please read the precautions on the back before filling out this page) ▼ Installation -------- Order --------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

M2766 539845 A7

Please read the precautions before filling in this page. Order ▲ Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Employee Cooperatives 539845 A7 ------------ Ε__ —_____ V. Description of Invention (114) The processing chamber C and the partition plate do not interfere with each other, but the partition plate can also be made of a retractable material or structure to improve this point. In this embodiment, the partition plate is made of rubber and formed in a bellows shape. When the partition plate is 1514, the end in the moving direction is fixed to the movable portion 1506 in the χ direction. When the partition plate is 1512, it is fixed to the casing. The inner wall of the body 1508. Fig. 39 shows a Jth modification of the ninth embodiment of the present invention. In this example, a cylindrical partition plate 1516 is formed around the tip of the lens barrel, that is, around the electron beam irradiating portion i 502, so that an aperture portion can be formed between the cylindrical plate 1516 and the upper surface of the sample s. According to this configuration, even if gas is released from the χγ stage, the pressure in the processing chamber C rises, and because the interior i 524 of the partition plate is partitioned by the partition plate and exhausted by the vacuum piping 15 10, the processing chamber c A pressure difference will occur between the interior and the interior of the partition plate 1524, and the pressure rise in the interior space 1524 of the partition plate can be controlled. The gap between the partition 1516 and the sample surface varies depending on how much the pressure in the processing chamber C and the surrounding area of the irradiation part 1502 is maintained, but it is most appropriate to be approximately + vm or even a few mm. . The inside of the partition plate 1510 is connected to the vacuum piping system in a general manner. Further, in the electronic wire device, if a high voltage is applied to the sample S to a high degree, if a conductive material is provided near the sample, there is a problem that a discharge occurs. At this time, if an insulator such as ceramic is used as the material of the partition plate 1516, the problem of the discharge between the sample S and the partition plate 1516 can be eliminated. In addition, the ring-shaped member i ^ q ^ i arranged around the sample S (wafer) is a plate-shaped adjustment member fixed on the sample table 1504. In order to apply the Chinese National Standard (CNS) A4 specification to the ▲ degree ⑵0 x 297 male 4)-^ ~ III · — I ---- I ---— I I --- (Please read the note on the back? Matters before filling out this page) 539845 A7 ___B7___ _ V. Description of the invention (Ii5) (Please read the note on the back? Matters before filling out this page) When the end of a wafer-like sample is irradiated with electron beams, a small gap 1552 can be formed on the entire front end of the partition plate 1516. Therefore, it is placed at a position south of the wafer. By this, no matter where the sample S is irradiated with the electron beam, the tip end of the partition plate 1 5 16 can often form a small gap 1 552, and the pressure of the space 1 524 around the tip end of the lens barrel can be kept stable. State. Fig. 40 shows a second modification of the ninth embodiment of the present invention. Around the electron beam irradiating section 2 of the lens barrel 1 501, a partition plate 1 5 19 having a differential exhaust structure is provided. The partition plate 1 5 19 has a cylindrical shape, and a circumferential groove is formed in the partition plate. An exhaust passage 1521 extends upward from the circumferential groove. This exhaust passage is connected to a vacuum pipe 1523 via an internal space 1522. Between the lower end of the partition plate 1519 and the upper surface of the sample s, a small gap of about + // m or even several mm is formed. According to this structure, even if the table moves, gas is released from the table, and the pressure in the processing chamber C rises, so that the gas flows into the tip portion, that is, the electron beam irradiation portion 1502, because the partition plate 1519 The gap between the sample and the sample s will be aggregated, and the conductance will be minimized, so it will block the gas inflow and reduce the inflow. In addition, since the gas flowing into the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is discharged from the circumferential groove 1520 to the vacuum pipe 1523, almost no gas flows into the space 1524 around the electron beam irradiating section 1502, and the gas can be discharged. The pressure of the electron beam irradiation unit 1502 is maintained in a desired high vacuum. Fig. 41 shows a third modification of the ninth embodiment of the present invention. A partition plate 1526 'is installed around the processing chamber c and the electron beam irradiation section 1502 to separate the electron beam irradiation section 1502 from the processing chamber c. This separation degree applies to Yin Guoyin's standard.) 539845 A7 ___ ________ B7 V. Description of the invention (116) 'Plate 1526' The support member 1529 and refrigerating machine formed by materials with good thermal conductivity such as steel or aluminum 153 ° is connected and cooled to -10 ° (rc to -200 ° C). The component i527 is used to prevent the thermal conductivity between the cooled partition plate 1526 and the lens barrel, and is made of ceramic or resin. It is made of a material with poor properties. In addition, the member 1528 is formed of a non-insulator such as ceramics, and is formed at the lower end of the partition plate 1526 and has a function of preventing the sample s and the partition plate 1526 from generating a discharge. The partition plate 1 526 prevents the gas molecules from flowing into the electron beam irradiation portion from the processing chamber C. Even if the gas molecules flow in, the molecules are frozen and collected on the surface of the partition plate 1526. Therefore, a certain space of the electron beam irradiation portion 502 can be used. The pressure of 1524 is kept low. In addition, in the case of refrigerators, cooling with liquid nitrogen can be used; He refrigerators; pulse tube refrigerators and other refrigerators. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Fig. 42 shows a fourth modification of the ninth embodiment of the present invention. As shown in Fig. 38, the two movable parts of the table 1503 are also provided with partition plates 1512 and 1514, even if the sample table 1504 moves. At any position, these partitions can be used to separate the space 1513 in the table from the processing chamber C and the cells 1550 and 1551. In addition, around the electron beam irradiation section 1502, The same partition plate 1516 as shown in FIG. 39 separates a certain space 1524 in the processing chamber c from the electron beam irradiating portion 1502 through the apertures 1550 and 1551. Therefore, at the table When moving, even if the gas adsorbed on the table is released into the space 1513, and the pressure in this part is increased, the pressure increase in the processing chamber [pressure rise 'can be further suppressed, and the pressure rise in the space 1524 can be further suppressed. The paper is again suitable for 88 standard (CNS) A4 specifications (210 X 297 public love) H6 342766 539845 A7 B7 V. Description of the invention (117) The pressure of the space 1 524 of the line irradiation section can be kept low. In addition, By making it as shown in the partition plate 1516, A partition plate 1519 with a differential gas holding mechanism, or a partition plate cooled by a freezer as shown in Fig. 40, can maintain the space at a lower pressure and a stable state. Fig. 43 'The optical system and the detection system of the electronic wire device in the ninth embodiment are displayed in a mode. The optical system is provided in the lens barrel 15 (H, the optical system and the detector are for illustration only, and can be required if needed. Any one of the optical systems 'detection system is used. The optical system 1560' of the electronic wire device includes: a primary optical system 1561 which irradiates an electron beam to the sample S placed on the table 1503; and the sample is released. The secondary optical system 1571-human optical system 1 561 with the released secondary electron beams includes: an electron beam source 1562 that releases electron beams; and two segments of the electron beams emitted from the electron beam source ι562 A lens system formed by electrostatic lenses 1563, 1564; a deflector 1565; a Wiener filter 1566 that deflects an electron beam so that its optical axis can be perpendicular to the surface of the object; a lens system formed by a two-stage electrostatic lens 1567, 1568, the above devices, as shown in Figure 36, are The electronic wire source is installed at the uppermost part, and then the electron axis of the electronic wire can be arranged toward the surface (sample surface) of the sample s in a straight and inclined manner toward the surface of the sample s ^ Wiener filter 1566, which has: 1566-1 and magnet 1566-2. Secondary optical system 丨 The optical system in which the secondary electron line shown in 57b sample S is put is provided with a two-stage electrostatic lens formed on the upper side of the Wiener filter 1566 in which the optical system is disposed again. The lens system is 1572, 1 573. Detector 1580, used to detect the paper size of 312766 t passed by the secondary optics system 1571. Applicable to China National Standard (CNS) A4 specification (21Q x 297). Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs. 539845 A7 ------ §L .______ 5. The description of the invention (ii) The secondary electron beams sent in. The components and functions of the optical system 1560 and the detector 15 80 are the same as before. Therefore, the detailed description is omitted. The electron wire released from the electron wire source 1 562 is shaped by the square opening of the electron wire source, and is reduced by the two-stage lens system 1563 and 1564, and finally by the polarizer 1565 Adjust the optical axis, and on the deflection center plane of the Wiener filter 1566, it is imaged as a square with a side of 125mm. Wiener filter 1566, in the plane perpendicular to the normal of the fish and the sample, forms an electric field orthogonal to the magnetic field. Structure, when the relationship between the electric field, magnetic field, and the energy of the electron wire reaches a certain condition, let the electron wire go straight. For other times, according to the relationship between the electric field and the energy of the electric field, the energy is biased to a predetermined direction. Figure 23 shows the following settings: will The electron beam from the electron beam source is incident perpendicularly to the sample S, and the secondary electron beam released from the sample is made to go straight toward the detector 2280. The shaped beam deflected by the Wiener filter 1566 is passed through the lens system 1567, 1568 is reduced to 1/5 and projected onto sample S. The secondary electron beams having information on the pattern image released by sample S are enlarged by the lens systems 1567, 1568 and 1572, 1573, and detected by The device 1580 forms a secondary electron line image. The 4-segment magnifying lens is formed by the lens systems 1567 and 1568 to form a symmetrical double lens, and the lens systems 1572 and 1573 also form a symmetrical double lens, so a non-skew lens is formed. By using the ninth embodiment of the present invention, the inspection process (G) or exposure process (C) used in the device manufacturing method described with reference to FIGS. 3 and 4 (a) (b) can be used in Examining or exposing subtle patterns under high-precision and stable conditions can improve product yields and prevent shipment of defective products. In this regard, the same applies to Figures 3 and 4 (a), (b) Relevant explanation, so this paper ^ Lai_Beam Standard (CNS) A4 Regulations; 297 Gongchu

^ ^ · --------- < Please read the notes on the back before filling out this page) 312766 118 539845 V. Description of Invention (il9) The description is omitted here. F application mode related to _ sample mounting table (10th embodiment) The tenth embodiment of the present invention relates to a device for irradiating an electron beam to a sample placed on an XY table, and more specifically , About the electronic wire device that does not have a differential exhaust mechanism on the XY table, but a differential exhaust mechanism around the lens barrel; a defect inspection device or an exposure device that uses the device; that is, a device that uses those devices Production method. As explained with reference to Figs. 36 and 37, the conventional XY stage in which a static pressure bearing and a differential exhaust mechanism are combined is equipped with a differential exhaust mechanism, and the static exhaust mechanism used in the atmosphere Compared with the pressure bearing type worktable, its structure is complicated and huge, its reliability as a worktable is also low, and there are problems with high cost. In this embodiment, the description of the prior art follows the descriptions of Figs. 36 and 37 and the descriptions related thereto. In order to solve the above problems, the tenth embodiment of the present invention provides: an electronic wire device; provided with: the inside of the housing containing the χγ stage can be evacuated, and at the same time, the electronic wire on the surface of the sample can be irradiated Differential exhaust mechanism for exhausting the area; The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints a defect inspection device that uses the above-mentioned electronic wire device to inspect the surface of the room material, or an exposure device that draws a pattern on the surface of the sample; The device is a semiconductor manufacturing method for manufacturing a semiconductor device. In the tenth embodiment, the term "vacuum" is used in a general sense within the technical scope. Hereinafter, a tenth embodiment of the present invention will be described with reference to the drawings. Article 44 1LSL. 3127〇6 This paper size is applicable to the national standard (CNS) A4 specification (210x297 mm) 539845 A7 _____B7 __ V. Description of the invention ((Please read the precautions on the back before filling this page) The figure shows The tip of the lens barrel 1 60 1 that irradiates the electron beam to the sample, that is, the electron beam irradiating portion 1602, is installed in a housing 1614 that divides the vacuum processing chamber c. The lens barrel 1601 is disposed directly below the lens barrel 1601. Sample S on the movable table in X direction (left and right direction in Fig. 44) of Xoya stage 1603. The sample S can be accurately adjusted by the Xoya stage 1603 with high accuracy. It is irradiated to any position on the sample surface. The pedestal 1606 of XY stage 1603 printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is fixed to the bottom wall of the housing 1614 in the Y direction (the direction perpendicular to the paper surface in the 24th). ) The moving γ table 1605 is mounted on the two sides of the β γ table 1605 on the pedestal 1606 (the left and right sides in Figure 24) to form a protrusion protruding into the groove, and the groove is formed on Facing a pair of gamma directions on the pedestal 1606 One side of the Y table of the devices 1607a and 1607b. The groove extends along the full length guided in the γ direction toward the Y direction. It protrudes above the protrusion in the groove, and a static pressure bearing 1611a of a general structure is provided on the lower side and the side. , I6〇9a, 1611b, 1609b. High-pressure gas is discharged through these static pressure bearings, whereby the Y table 1605 can support the Y-direction guiding devices 1607a, 1607b in a non-contact manner, and smooth toward the Y direction. In addition, a linear motor 1612 of a general structure is arranged between the pedestal 1606 and the Y table 1605, and the Y-direction drive system uses this linear motor. In the γ table, the high-pressure gas supply flexibility is used. The motor supplies high-pressure gas, and through the gas passage (not shown) formed in the Υ table, supplies high-pressure gas to the above-mentioned static pressure bearings 1609a to 1611a; and 1609b to 16111>. The high-pressure gas supplied to the static pressure bearing is a system To achieve the following functions: from several micrometers to tens of micrometers formed between the opposing guide surfaces guided in the Y direction ^ This paper size applies to China National Standard (CNS) A4 (210 X 297) Meal ^ 39845 A7 V. Explanation of the invention (Ui spurts out the gap and correctly positions the γ table in the X direction and Z direction of the corresponding guide surface (upward and downward directions in Figure 44). Page Line Intellectual Property Bureau, Ministry of Economic Affairs The X consumer cooperative is printed on the γ table, and the χ table 160 is placed in a form that can be moved in the χ direction (left and right directions in Figure 44). The Υ table 1605 is for use with the Υ table. A pair of X-direction guidance devices 1608a and 1607b having the same structure of the γ-direction guidance devices 1607a and 1607b are arranged on both sides of the X-table 1604. Surface of the X-direction guide device A groove is also formed on the side facing the X-table, and a side portion of the X-table (the side facing the X-direction guide device) is formed with a protrusion protruding from the groove. The groove system extends along almost the entire length of the X-direction guide. The upper surface, the side surface and the side surface of the protrusion of the X-direction table 4 protruding in the groove are provided with the same static pressure bearings as the aforementioned static pressure bearings l611a, 1609a, 16Ub, and 160b (not shown) ). A linear motor with a general structure is arranged between the γ table 1605 and the χ table 160, and the X table is driven in the X direction by the linear motor. In the X table, high-pressure gas is supplied through the flexible pipe 1621, and high-pressure gas is supplied to the static pressure bearing. By ejecting the high-pressure gas from the hydrostatic bearing to the guide surface guided in the χ direction, the X table 1604 is supported in a highly accurate and non-contact manner facing the γ direction. The vacuum processing chamber C is evacuated by vacuum piping 1619, 162a, 1620b connected to a vacuum pump or the like having a generally known structure. The inlet side of the piping 1620a, 1620b (the inside of the vacuum processing chamber) penetrates the pedestal 1606, and above it, it is opened near the high-pressure gas discharge position of the XY stage 1603. The pressure in the vacuum processing chamber is ejected by the static pressure bearing High-pressure gas tries to prevent it from rising. This paper size applies _ National Standards (CNS)> A4 size (210x297 Public Love 312_ Wood paper printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs applies the Chinese National Standard (CNS) A4 size (210 X 297 Public Love) 539845 A7 '— --B7 V. Description of the invention (1 ^ > A differential exhaust mechanism 1625 is provided around the tip of the lens barrel 1601, that is, the electron beam irradiation portion i 6〇2, so that the electron beam irradiates the space 163. When the pressure in the vacuum processing chamber C increases, the pressure can be reduced to a very low level. That is, the annular member 1626 of the differential exhaust mechanism 1625 installed around the electron beam irradiation unit 1602 is placed below it. (The surface on the s side of the sample) A fine jade gap (several micrometers to hundreds of micrometers) 1 640 can be formed between the sample and the sample, which is positioned on the casing 1614 and forms a circular groove 1627 below it. The circular groove 1627 borrows The exhaust pipe 1628 is connected to a vacuum pump (not shown). Therefore, the small gap 1640 is exhausted through the annular groove 1627 and the exhaust port 1628, and even if there is a gas molecule to enter the vacuum processing chamber C, the annular member The space 1630 surrounded by 1626 can also be exhausted by this. This can not only control the pressure in the two chambers 1630 to a low level, but also accurately irradiate the electron beams. According to the pressure in the processing chamber, the annular groove can press the pressure in the space 1630 with the electron beams. It can be made into a double structure or a triple structure. Generally, dry nitrogen is used for high-pressure gas supplied to a hydrostatic bearing. However, it is best to use a high-purity inert gas. This is based on: When the gas contains water or oil In the case of impurities, the degree of vacuum may be deteriorated due to the adhesion of these impurity molecules to the inner surface of the housing or the surface of the table component that divides the vacuum processing chamber, or the degree of vacuum of the space irradiated with electron rays due to adhesion to the surface of the sample In addition, in the above description, the sample S is generally not directly placed on the X table, but is placed on: the sample is held in a removable manner, and it has a small position change on the XY table 1603 Functional test bench jii / 66 I —II -------- ^ · I ------- (Please read the precautions on the back before filling this page) 539845 Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed cooperatives

A7 B7 V. Description of the invention (above, because of the existence of the sample table and its structure has nothing to do with the gist of the invention of the present application, the description is omitted for simplicity. The electronic wire device described above can be used directly in the atmosphere The table mechanism of the static pressure bearing used can be used at the same cost and size, and the high-precision table equivalent to the high-precision atmospheric table used in the exposure device can be applied to the XY table for electronic wire devices. The structure, configuration, and actuator (G linear motor) of the static pressure guidance described above are limited to only one of the embodiments. Any static pressure guidance or actuator that can be used in the atmosphere can be applied. Next, Fig. 45 shows a numerical example of the size of the ring-shaped member 1 626 formed in the differential exhaust mechanism and the ring-shaped groove formed thereon. In addition, in this example, the annular groove has a dual structure of 1627a and 1627b, and the two are separated in a radial direction. The flow rate of the high-pressure gas supplied to the hydrostatic bearing is generally about 20 L / min (atmospheric pressure conversion). Assuming a vacuum pump with an inner diameter of 50 mm and a length of 2 m, and a dry pump with an exhaust speed of 20,000 L / min, the exhaust is performed in a vacuum processing chamber, and the pressure in the vacuum processing chamber is about 160 Pa ( About ΐ · 2Τοιτ). At this time, if the specifications of the annular member 1626 and the annular groove of the differential exhaust mechanism are set as shown in FIG. 45, the pressure in the electron beam irradiation space 1630 can be maintained at 10 · 4Pα ( 10 · 6Τοιτ). In addition, if the differential exhaust mechanism can maintain the M force in the electron beam irradiation space i630 at a predetermined pressure, the shape may not be limited to a concentric circle as shown in this embodiment, and may be made into a rectangle or a plurality of Angular. In addition, it can be set on a part of the surrounding instead of the whole week. (Please read the notes on the back before filling this page)

Standard of this paper Hao_Feng National Material (CNS) A4 specification (210 X 297 public love) J i27〇6 Printed by the Consumers 'Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 539845 A7 — _ B7 V. Description of the invention (124') Figure 46 Shows the piping system of the device shown in Figure 44. The vacuum processing chamber C divided by the casing 1614 is connected to the dry vacuum pump 1653 through vacuum pipes 1674 and 1675. In addition, the annular groove 1627 of the differential exhaust mechanism 265 is connected to the turbo molecular pump of the ultra-local vacuum fruit via a vacuum pipe 1670 'connected to the exhaust port 1628. In addition, the inside of the lens barrel 1601 is connected to the turbo molecular pump 1652 through a vacuum pipe 1671 connected to the exhaust port 1618. These turbomolecular pumps i65i and i652 are connected to the dry vacuum pump 1653 through vacuum pipes 1672 and 1673. (In this figure, the rough suction pump of the turbo molecular pump and the vacuum exhaust chamber vacuum pump are used as a dry vacuum pump, but it can also be based on the flow of high-pressure gas supplied to the static pressure bearing of the χγ stage. The volume or internal surface area of the vacuum processing chamber, the internal diameter and length of the vacuum piping, are exhausted by dry vacuum pumps of other systems.) In the static pressure bearings of XY stage 1603, high-purity inert gases (N2 gas, Ar gas, etc.) ) Are supplied through flexible piping 1621, 1622. The gas molecules ejected from the hydrostatic bearing diffuse into the vacuum processing chamber and are exhausted through the exhaust ports 1619, 1620a, 1620b by the dry vacuum pump 2353. In addition, the gas molecules that have invaded the differential exhaust mechanism or the electron beam irradiation space are attracted by the annular groove 1627 or the tip of the lens barrel 1601, and pass through the exhaust ports 1628 and 1618, and by the turbo molecular pump 1651 And 1652 exhaust, exhausted by turbo molecular pump, and then exhausted by dry vacuum pump 1653. In this manner, the high-purity inert gas supplied to the hydrostatic bearing is collected in a dry vacuum pump and discharged. On the other hand, the exhaust port of the dry-type vacuum pump 1653 is made by piping 1676 I "----------- order --------- (Please read first Note on the back, please fill in this page again.) This paper size applies the Chinese national standard (CNS > A4 size (210 * 297 gong > 124 W2766 539845) Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 b / V. Description of the invention ( 125) is connected to the compressor 1654, and the exhaust port of the compressor 2316 is connected to the flexible pipes 1621, 1622 through the pipes 1677, 1678, 167 9—, and the regulators 1661, 1662. Therefore, the dry vacuum pump The high-purity inert gas discharged from 1653 is again pressurized by the compressor 1654 and adjusted to an appropriate pressure by the regulators 1661 and 1662, and is again supplied to the static pressure bearing of the χγ table. In addition, it is supplied to As mentioned above, the gas of the static pressure bearing must be of high purity and contain no moisture or oil as much as possible. Therefore, the turbo molecular pump, dry vacuum pump and compressor must be constructed so that the moisture or oil cannot be mixed with the gas. In the flow path, and on the discharge side of the compressor, 677 If a cold trap or filter (1660) is installed in the middle, it will help to suppress impurities such as moisture or oil mixed in the circulating gas, so as to avoid being supplied to the hydrostatic bearing. This can 'recycle and reuse high purity Inert gas can save high-purity inert gas, prevent inert gas from leaking into the room where the device is installed, and eliminate the occurrence of suffocation and other accidents caused by inert gas. In addition, high-purity inert gas is connected to the circulation piping system. The gas supply system 1663 has the following functions: that is, high-purity inert gas can be filled in all cycles including the vacuum processing chamber C and the vacuum pipes 670 to 1675 and the pressure-side pipes 1676 to 168 ° at the start of gas circulation. If the circulating gas flow rate is reduced due to some reasons, the shortage can be supplied. In addition, by making the dry vacuum pump 1653 capable of compressing to above atmospheric pressure, the dry vacuum pump 1653 and the compressor 1654 can be used as one ^ -------- ^ --------- line (please read the notes on the back before filling this page)

3 «766 539845 A7

V. Description of the invention (126 > Tai Li to use. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. In addition, in the ultra-high vacuum pump used for lens barrel exhaust, in addition to-turbo molecular pump, ion pump or Suction pump. However, when using these storage pumps, the circulation piping system cannot be constructed in this part. In addition, in addition to dry vacuum pumps, diaphragm type dry pumps can be used, of course, other types of dry pumps can be used In addition, the tenth embodiment described with reference to FIGS. 44 to 46 is the same as the ninth embodiment, and includes the optical system and the detection system described in FIG. 43. In the tenth embodiment, The description related to FIG. 43 is used. In addition, as described in the ninth embodiment, the tenth embodiment of the present invention is used to refer to FIGS. 3 and 4 (a) and (b). The inspection process (G) or exposure process (C) in the device manufacturing method described can inspect or expose subtle patterns under high-precision and stable conditions, thereby improving product yield and preventing shipment of defective products. About this, because Explanations related to Figs. 3 and 4 (a) and (b) are omitted here, and the description is omitted here. Cool_Optical Lens Related Embodiments (篦 11 f stressing mode) The eleventh embodiment of the present invention The form relates to an electronic wire device for evaluating patterns and the like formed on the surface of a sample, and a device manufacturing method using the electronic wire device to evaluate a sample in a process drawing or after completion. More specifically, it relates to a device having a minimum line. A pattern with a width of less than 0.1 ljtzm is an electronic wire device that can be used for evaluation of defects such as devices on samples, CD measurement, potential comparison measurement, and high-time decomposition potential measurement with high reliability and high reliability; And use this kind of electronic wire device, in the process chart ^ -------- 1 --------- f Please read the unintentional matter on the back before filling this page) This paper size applies China National Standard (CNS) A4 specification (210 X 297 public love) 126 ΤΓ 2756 539845 V. Description of the invention (127) or device manufacturing method for sample evaluation after completion. Regarding the device for observing and evaluating a sample containing an insulating material, various technical related reports have been made. In this technique, as for a scanning electron beam microscope, its general devices include: the beam current of a primary beam, the absorption current of a sample, the amount of reflected electron rays from an irradiation device, the amount of secondary electron rays emitted, and the like Device with charge detection function capable of evaluating charging state

539845 V. Description of the invention (m) The electron wire source 17 11 of the sub-wires; the condenser lens 1712 that bundles the primary electron wires released by the electron wire source 17 11; the Wiener filter 1715; and the objective lens 1716. It is configured as shown in Figure 4-8. In addition, the reference numerals 1714 and 1717 are axis alignment devices for axially aligning the primary electron beam, 1718 is a deflector for scanning the primary electron beam, and 1719 is an axisymmetric electrode. The secondary optical system 1720 is arranged along the optical axis of the tilt associated with the primary optical system. Although not shown in Fig. 47, the secondary optical system may include at least one lens. The detection system 1730 includes: a detector 1731; and an image forming unit 1733 connected to the detector 1731 through a dielectric amplifier 1732. Order sample S, by a generally known method, is detachably supported on a support frame 1741 on the XY stage 1740, and the XY stage 1740 is oriented in a direction of two orthogonal axes (see FIG. 47: Left and right direction and direction perpendicular to the paper surface). The printed electronic wire device 1701 of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs also includes: a delayed voltage application device (hereinafter, referred to as an application device) 1750 electrically connected to the support 1741; a charging survey and a delayed voltage determination system (Hereinafter, referred to as an inspection and determination system.) 1760❶The survey and delay voltage determination system 1760 includes a display 1761 electrically connected to the image forming unit 1733, a computing unit 1762 connected to the display 1761, and a computing unit. 1762 connected to the CPU 1763. The CPU 1763 supplies signals to the application device 1750 and the deflector 1717. In the eleventh embodiment, the condenser lens 1712 and the objective lens 1716 have substantially the same structure. Therefore, the condenser lens 1712 is taken as an example to describe in detail the paper size. _ 钃 National Standard (CNS) A4 (210 X 297) 12) 312766 539845 A7 _ B7 V. Description of the invention (U Jinming. This is a static lens that reads the condensing lens 1712 of the # lens, and removes the integral Taoman, so that its axial cross-section is shaped as shown in Figure 47. Alas, the condenser lens 1712 is provided with a ceramic main body 1712. The main body 1712_bu in which P forms a circular opening / hole 1 7 1 2 · 2, and the planar shape is formed into a ring shape, and the inner ring is fixed on the side as described above. As shown in Figure 47, three plate-shaped sections 1712-3 and even 1712 are divided in the up-down direction (along the direction of the optical axis). The outer periphery of the pottery body, especially the plate-shaped section 1712_3 and even 1712_5, is covered with metal. Coating films 1712_6 and even 17124. These coating films and even 1712-8 each have electrodes (upper electrode 1712-6, middle electrode i7i2_7 and lower electrode 1712-8). The coating films, that is, upper and lower electrodes 1712_6 and 17128 are applied to be close to ground. Voltage on the side, that is, the coating film in the center The intermediate electrode Π12-7, through the electrode mold ^^ 9 provided in the main body, is applied with a positive or negative high voltage having a large absolute value, thereby exerting the role of a lens. This kind of lens is made by cutting off the integral ceramic And processed, so the processing accuracy is good, and the outer diameter of the lens can be reduced. The electronic wire device printed in this embodiment by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Line Economy can reduce the outer diameter of the lens, so it can also be reduced. Reduce the outer diameter of the lens barrel for storing electronic wire devices. Therefore, for samples such as wafers with large apertures, multiple lens barrels can be configured to correspond to one wafer. For example, suppose the lens outer diameter (diameter) is 4 〇mm, as shown in Fig. 48, four lens barrels 1702 arranged in the X direction can be arranged in two rows in the Y direction, and a total of 8 lens barrels 1 702 can be arranged to correspond to a sample. When the worktable (not shown) is continuously moved in the Y direction, and the scanning evaluation is performed with each lens barrel in the X direction, a throughput of 7 to 8 times when using an electronic wire for evaluation is obtained. 312766 This paper scale Be applicable Order country national standard (CNS> A4 size (210x297 mm) 539845 A7

V. Description of the invention (1: A (please read the note on the back? Matters before filling out this page) In the above-mentioned electronic wire device, one time was released by the cathode 1711-1 of the electronic wire source 1711 of the optical system 1710. The electron beam, that is, the beam, is accelerated by the anode 1711-2. The overlapping image of the electron beam source formed by the primary electron beam is reduced to a thin beam of about 50 nm by the condenser lens 1712 and the objective lens 1716. Scanning irradiation is performed on the S sample. With the irradiation of the primary electron beam, the secondary electron beam released from the sample is guided by the axisymmetric electrode 1719 to the object lens side, and is symmetric by the axis. The electrode 1719 allows the secondary electron wire to pass through the object lens 1716 side or return to the sample side, and the potential contrast of the sample pattern can be obtained. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the secondary electron wire passing through the object lens. The Wiener filter 1 7 丨 5 is separated by the primary optical system 17 10 and introduced into the secondary electron optical system (hereinafter referred to as the primary optical system) 1720 and detected by the detector 1731 of the detection system 1730. Detector 1731 The sub-line image is converted into an electric signal indicating the intensity. The electric signals output by the detectors are amplified by a corresponding amplifier 1732, and then input to the image forming section 1733, and the image forming section converts the image into a graph. Image data. The image forming unit 1 7 33 is supplied with a scanning signal for biasing the primary electron beam. Therefore, the image forming unit will display an image representing the sample S. By combining this image with the reference pattern In comparison, the defect of the sample S can be detected. In addition, although a single electron beam is used in this embodiment, compared with the use of a plurality of light beams, it is preferable to use a single light beam to improve the yield of good products. The image data converted by the image forming unit 1733 is displayed as an image by the display device 1761 of the survey and determination device 1760, and the image is evaluated by the calculator 1762. In the present embodiment, the calculator 1762 is used

13U “The Zhang scale is applicable to China 539845

5. Description of the invention (u) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs to perform the charging investigation function. In addition, the calculator 1762 can check the charging status based on the image. The result is input to the CPU 1763, and the delay voltage is set to an optimum value. The CPU 1763 in this embodiment constitutes a delay voltage determining device. More specifically, the position where the sample to be evaluated is susceptible to charging is evaluated, that is, as shown in [A] of FIG. 49, the corner of the memory cell 1771 of the wafer 1770 formed on the surface of the wafer as the sample is generally unit. That is, determine (1) the pattern offset 1773, 1774 of the memory cell boundary 1772 of the corner cell, or, (2) the cross-section of the corner cell of the memory cell (such as arrow A1 and The comparison of the signal intensity obtained during the scan of A2 in general) is shown by the solid lines 1775 and 1777 in [B] in Figure 49, and the signal obtained when the pattern is scanned in the direction of the arrows A3 and A4 in the center of the wafer The intensity comparisons 1776 and 177 8 (both are indicated by dashed lines in [B] in Figure 49) are compared. A complex voltage is applied to the delay voltage application device 1750, and at the same time, the offsets 1773 and 17 74 are measured or compared with 1775, 1777 and 1776, 1778, and the smaller offsets 1773 and 1774 are evaluated as having a small charging effect. . In addition, the comparison values of the corners were 1775 and 1777, and those who were close to the comparison values at the center were evaluated as having less influence on charging. When a good delay voltage is found, the value is transmitted to the application device 1750 by the CPU 1763, or when the most appropriate beam current value is found, these values are used to evaluate the sample, that is, the wafer. The eleventh embodiment of the present invention can be used in the inspection process (G) in the device manufacturing method described with reference to Figs. 3 and 4 (a) and (b). In this way, even semiconductor devices with fine patterns can be manufactured in good quality -------- ^ --------- lines (please read the precautions on the back before filling this page) Paper size applies Chinese national standard (CNS > A4 specification (210x297 public love) 131 312766 539845 A7 _ B7__ V. Description of the invention (13 Inspection under good production conditions, so all inspections can be carried out to improve product yield and prevent defects Shipment of products. In this regard, the descriptions related to Figures 3 and 4 (a) and (b) are used, so the description is omitted here. Embodiment related to defect inspection (12th embodiment) The twelfth embodiment of the present invention is a defect inspection device for comparing a sample image of a semiconductor wafer or the like with a reference image prepared in advance to inspect the sample defect, and a semiconductor inspection device using the defect inspection device. A method for manufacturing a semiconductor device of a device. Previously, a defect inspection device for detecting a defect of a sample by detecting a secondary electron line generated by irradiating a primary electron line to a sample such as a semiconductor wafer was used in a semiconductor device. In the manufacturing process, this type of defect inspection device has the technology of applying image recognition technology to achieve automation and efficiency of defect inspection. "This technology uses a computer to detect the secondary electron line. The pattern image data of the inspected area of the sample surface is matched with the reference image data of the sample surface stored in advance, and the existence of the sample defect is automatically determined based on the calculation result. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Nowadays, especially in the field of semiconductor manufacturing, with the evolution of high-definition patterns, the need to detect subtle defects has become increasingly important. In this state, in the defect inspection device applying the above-mentioned image recognition technology, It is required to further improve the accuracy of recognition. However, in the above-mentioned prior art, there is a problem that an image of a secondary electron beam obtained by irradiating a primary electron beam to a test area on a surface of a sample and a reference prepared in advance Position deviations occur between the images, resulting in a reduction in the accuracy of defect detection. Positional deviation, applicable to this paper standard of primary electronic wire_Guo Guozuo Standard (CNS> A4 Specification ⑵〇χ297 公 爱 j --------- D 132 312766 539845 Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption Cooperative) Print A7 _ β7 V. Description of the invention (133) When the irradiation area deviates from the wafer, and a part of the secondary electron line of the inspection pattern is sunken in the detected image, a major problem will occur in particular, making it impossible to detect the image. Here, the matching area is processed only by appropriate adjustment techniques (refer to Japanese Patent Publication No. 6-95340). In this regard, the twelfth embodiment of the present invention is a fatal problem especially in high-resolution pattern inspection. : A defect inspection device for preventing a reduction in defect inspection accuracy due to a positional deviation between an image to be inspected and a reference image; and the use of the above-mentioned defect inspection device to perform a sample due to a manufacturing process of a semiconductor device Defect Inspection 'is a semiconductor manufacturing method that annihilates the yield of device products and prevents shipment of defective products. Fig. 50 is a diagram showing a schematic configuration of a defect inspection apparatus according to a first embodiment of the present invention. This defect inspection device will release the electron beam source 1 80 1 of the primary electron beams; and deflect the released primary electron beams to the formed electrostatic lens 1802 ′ at the orthogonal position of the electric% * E and the magnetic field B, and will form The Wiener filter 1803 that the primary electron beam is deflected so that it can be in contact with the semiconductor wafer in a slightly vertical manner; the primary electron beam that is deflected is imaged on the objective lens 1810 on the wafer 1805 and installed in a vacuum The exhaust chamber (not shown) is equipped with a worktable 1 804 that can be moved in the horizontal plane with the wafer 1805 mounted; the wafer 1805 is exposed to a single electron beam at a predetermined magnification. An electrostatic lens of a development projection system of which the released secondary electron line and / or reflected electron line are used for development projection and imaging, and the imaged image is detected as the primary electron line of the wafer Image detector 18Q7; and, while controlling the entire device, according to the two paper sizes detected by the detector 1 807, the Chinese national standard (CNS> A4 specification (210x 297 meals)) 133 312766

-------------- ^ ·! (Please read the note on the back) before filling out this page.) -Line. 539845 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economy DESCRIPTION OF THE INVENTION The process execution control unit 1816 detects (134) electron beam images to detect a defect on the wafer 1 805. In addition, the secondary electron line image contains the reflected electrons in addition to the secondary electron lines. In addition, between the objective lens 1810 and the wafer 1805, there is a deflection electrode 1811 that is biased toward the incident angle of the wafer 1805 to the primary electron line by an electric field or the like. The bias electrode 1811 is connected to a bias controller 1812 that controls the electric field of the bias electrode. The bias controller 1812 is connected to the control unit 1 816 to control the bias electrode, so that an electric field corresponding to a command from the control unit 1816 can be generated in the bias electrode. In addition, the bias controller 1812 may constitute a voltage control device that controls the voltage supplied to the bias electrode 1811. The detector 1807 may have any configuration as long as it can convert a secondary electron beam image formed by the electrostatic lens 1806 into a signal that can be post-processed. For example, Figure 55 details General, Detector! 807, is equipped with: a multi-channel plate 1850; a fluorescent surface 1852; a relay lens 1854; that is, a camera sensor 856 formed by a majority of CCD elements. The multi-channel plate 1850 has many channels in the plate. When the secondary electrons imaged by the electrostatic lens 1806 pass through the channel, more electrons will be generated. That is, the secondary electron line can be enlarged. The fluorescent surface 1852 generates glory 'by the amplified secondary electron line, and thereby converts the secondary electron line into light. The relay lens 1854 'guides the fluorescent light to the CCD camera sensor 1856, and the ccD camera sensor 1856 converts the intensity distribution of the secondary electrons on the surface of the wafer 1805 into the electrical signals of the components, that is, digital The image data is output to the control unit 1 816. (Please read the Zhuyin on the back? Matters before filling out this page> -------- Order · --------

539845 V. Description of the invention (135) The control unit 1816, as illustrated in Fig. 50, may be composed of a personal computer or the like which is generally used. This computer is provided with: a control unit main body 1 8 丨 4 that performs various controls according to a specified program; a CRT 1815 that displays the main body 8 i 4 processing results; and a keyboard or mouse input for the operator to input commands Department 1818. Of course, the control unit 1 816 may be constituted by hardware dedicated to the defect inspection device or a work platform. The control unit main body 1814 'is constituted by various control substrates such as a CPU, RAM, ROM, hard disk' video substrate and the like, which are not shown. A memory such as a RAM or a hard disk is provided with a secondary electron beam image storage area for storing electrical signals received by the detector 1807, that is, the secondary electron beam image of the wafer 1805. Digital image data. In addition, on the hard disk, there is a reference image memory section 1813 that stores reference image data of a non-defective wafer in advance. In addition, the hard disk also stores: a control program for controlling the entire defect inspection device; The storage area 1808 reads out the secondary electron beam image data, and according to the image data, the defect detection program 1809 for automatically detecting the defects of the wafer 1805 according to the designated operation method. This defect detection program 1809, the details of which will be described later, can obtain the reference image read from the reference image memory 1813, and the secondary electron line image actually detected, the automatic detection Defective part, and can warn the operator when it is judged to be defective. At this time, the secondary overcurrent generation image 1 8 1 7 can also be displayed on the CRT1815 display. Next, the operation of the defect inspection device shown in FIG. 50 will be described using the flowcharts shown in FIGS. 52 to 54 as an example. First, as shown in the flow chart of the main program in FIG. 52, firstly install the wafer 1805 which is the most inspected object on this paper and use the national standard ((5ns> A4 rule 4 规, public love) 135 312766 539845 V. Description of the invention (136)

Next, an image of a plurality of inspected areas on the χγ plane of the surface of the wafer 1805, each of which is partially overlapped and mutually displaced, is acquired. (Step 1904). The plurality of inspected areas for which images should be acquired refers to: As shown in FIG. 56, for example, on the wafer inspection surface 1834, the wafer is circled with reference numbers 1832a '1832b, ... 1832k, ... Check around the pattern 1830, open position. For example, as shown in FIG. 51, the rectangular areas shown are bounded and partially overlapped with each other while being shown, and an image 1832 (inspected image) of 16 inspected areas can be obtained. Here, in the image shown in FIG. 51, a rectangular block (or a block unit larger than a pixel may be equivalent) corresponds to an i pixel, and a black block corresponds to an image portion of a pattern on the wafer 1805. . For details of this step 1904, refer to the flowchart in FIG. 53 described later. Next, compare the image data of most of the inspected areas obtained in step 1904 with the reference image stored in the memory section 1819, and compare each other (step 1908 in FIG. 52) to determine whether the multiple Check the wafer inspection surface for defects in the inspection area. This project is to implement the so-called matching process of image materials. For details, please refer to the flowchart in Figure 54 below. From the comparison result of step 1908, it is judged that there is a defect in the wafer inspection surface collected from the above-mentioned plurality of inspected areas (affirmative judgment in step 1912), and the operator is warned of the existence of the defect (step 1918). The warning methods are: · For example, a notice indicating the existence of a defect is displayed on the display of CRT1 81 5 The paper size applies + fel g dish standard (CNS) A4 specification ⑵G χ as public love) 539845

At the same time, an enlarged image 1817 of a defective pattern can be displayed. The defective wafer is immediately taken out from the sample chamber i803, and the non-defective wafer is stored in a separate storage place (step 1919). (Please read the note on the back side first and then fill out this page) When the comparison result of step 1908 determines that the wafer 1805 is free of defects (step 1912 negative judgment), the wafer 1805 which is currently being inspected is subjected to 疋It is judged whether there is an unchecked area (step 1914). When there is an area that must be inspected (affirmative judgement in step 1914), the worktable ι804 is started, and the wafer 1805 is moved to another area that must be inspected and can be completely included in the irradiation area of the secondary electron beam (step 1916) . After that, return to step 1902 and perform the same processing for other inspection areas. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs when there is no area to be inspected (negative judgment in step 1914), or after the defective wafer project is taken out (step 1919), it is judged that the wafer is the inspection object 1 805 , Make it the final wafer, that is, determine whether there are unchecked wafers in the unloaded loader (step 1920 negative judgment), and store the inspected wafers in the designated storage place, On the other hand, a new wafer that has not been inspected is mounted on the table (step 1922). After that, it returns to step 1902 and performs the same processing on the current wafer. When it is judged that it is the last wafer (affirmative judgment in step 1920), the inspected wafer is stored in a designated storage place, and all processes are completed. Next, the processing flow of step 1904 will be described with reference to the flowchart in FIG. 53. In Fig. 53, the picture number I is first set to an initial value of 1 (step 1930). The image number is an identification number in which a plurality of images of the inspected area are sequentially assigned. Next, the image position (Xi, Yi) is determined based on the inspected area of the mounted image number I (step 1932). The position of this image is the size of the quilt and paper. Applicable to the Chinese National Standard (CNS) A4 (210 X 297 public love) 312766 m. 5. Description of the invention (m) The area defined as the area to be inspected U ^ ^ Symbol 疋Location, such as the central location within the second zone. At present, due to μ, the image position is (X1, this position is equivalent to, for example, the center position of the inspected area 18 仏 shown in FIG. 16》. The image positions of all inspected image areas are set in advance. For example, it is stored in the hard disk of the control unit 1816, and is read in step ㈣. Second, in order to allow the primary electron beam passing through the deflection electrode 1811 of FIG. 50 to be irradiated to the image position determined in step 1932 The area of the image under inspection (χι, γι) is applied with a potential to the bias electrode 1811 by the bias controller 1812 (step 1934 in FIG. 53). Then, the electron beam is released by the electron beam source 2501 and passes through the electrostatic lens 18 〇2, Wiener filter 18〇3, the objective lens 1810 and the bias electrode 1811 are irradiated onto the surface of the mounted wafer 1805 (step 1936). At this time, a primary electron beam passes through the bias electrode 1811 The generated electric field is deflected and irradiates the entire inspected image area at the image position (Xi, Yi) on the wafer inspection surface ι834. When the image number is i = 1, the inspected area is 1832a. Employee Consumption of Intellectual Property Bureau, Ministry of Economic Affairs The company prints a secondary electron beam and / or a reflected electron beam (hereinafter collectively referred to as "secondary electron beam") emitted from the inspected area illuminated by the primary electron county. Then, the static electricity of the projection system is expanded. The lens 1806 images the generated secondary electron beams in the detector 1807 at a specified magnification. The detector 1807 detects the imaged secondary electron beams, and converts and outputs the electrical signals of each detection element. Digital image data (step 1938). Finally, the digital image data of the detected image number i is transferred to the secondary electron line image memory area 1808 (step 1940). This paper scale applies Chinese national standards ( CNS) A4 specification (210x 297 public love) 138 312766 539845 V. Description of the invention (139) Secondly, increase the image number by only 1 (step 1942), and determine whether the incremented image number (hi) exceeds A fixed value of iMAx (step 1944). The number of images to be inspected that this iMAX system should obtain is '16' in the above example of Figure 51. The image number (i + i) does not exceed a fixed value of iMAX (step 1944). Negative judgment), return to step 1932 again to restart the needle The incremental image number (Ηι) determines the image position (X, + 1 'Yi + 1). This image position refers to the image position (Xi' Yi) determined by the previous program to reach the X direction and / Or the position when the Y direction moves only a certain distance (ΔΧί, ΔΥί). In the example in FIG. 56, the inspected area is moved from (Xi, Yi) to the position in the Υ direction (χ2, D, which is indicated by a dotted line). The rectangular area is 1832b. In addition, the value of (△ X 丨, △ Y i X 丨 =: 1, 2, ... iMAx) can be determined between the pattern 1830 of the wafer inspection surface 1834 and the field of view of the detector 1807. The actual deviation data, the number and area of the inspected areas should be set appropriately. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Then, in the iMAX inspected areas, steps 1932 to 1942 are processed in order. These inspected areas, as shown in FIG. 56, are image positions (Xk, Yk) that have been moved k times to form an inspected image area 183 2k. Generally, the inspection surface 1834 of the wafer is attached to Stagger the positions while performing partial overlap. In this way, the image memory area 1 808 can thereby obtain images of the 16 inspected areas illustrated in FIG. 51. The obtained plurality of images 1832 (inspection images) of the inspected area are, as shown in FIG. 56, partially or completely containing an image 1830 of the pattern 1830 on the wafer inspection surface 1834. When the incremental image number i exceeds iMAX (affirmative judgment in step 1944) 312766 M-scale is applicable to national standards (CNS> A4 specification (210x297 mm 539845) Employee Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs printed A7 --- ---_____ 5. When the invention system (14G) ', repeat this subroutine and move to the comparative process of the main program in Figure 52 (step 1908). In addition, the image data transferred in step 1940 is It is formed by the intensity value of the secondary electron of each pixel detected by the detector 1807 (the so-called inductance kData)), because it is matched with the reference image in the subsequent comparative project (step 1908 in FIG. 52). Calculations, so it can be stored in the memory area 8 in the state of performing various calculation processes. The calculation process includes: for example, the size of the image data and / or the density month b can be enough to match the size of the reference image And / or positive planning processing with consistent density; and processing of isolated pixel groups below a specified number of pixels as noise and removing them. In addition, in addition to pure inductive data (Beta Data), data can also be compressed and transformed into The feature matrix of the detected pattern features is extracted within a range that does not reduce the detection accuracy of the high-definition pattern. Such feature matrices include, for example, a region of a second element formed by MxN pixels to be inspected and divided into mxn (m < M 'n < N) block, and the secondary electron line of the pixels contained in each block. The sum of the intensity values (or the normalized value obtained by dividing the total number of pixels in the entire area under inspection by the sum value)' The mxn feature matrix formed as each matrix component. At this time, the reference image data is also stored with the same expression. The image data referred to in the eleventh embodiment is in addition to the simple inductance data Beta Data. It also includes image data extracted from the features of this arbitrary calculation function. Next, the processing flow of step 1908 will be described with reference to the flowchart in FIG. 54. First, the CPU of the control unit 1816 uses the reference image memory unit 1813 ( Figure 50) Read the reference image data into working memory such as RAM ^ -------- 1 --------- (Please read the precautions on the back before filling in this page)

This paper size applies the Chinese National Standard (CNS) A4 specifications (210 * 297 Public Love 312766 539845 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 312766 A7 5. On the invention description (⑷) (step 1950). This benchmark image In Figure 51, it is indicated by reference number 1836. The image number i is reset to ι (step 1952), and the inspected image data of the image number i is read from the memory area 1 808 to the working memory. (Step 1954). Then 'match the read reference image data with the data of image i' to calculate the distance value Di between the two (step 1956). The distance value Di represents the reference image and The greater the similarity between the inspected images i, the greater the distance value, the greater the difference between the reference image and the inspected image. The distance value Di can be used as long as it can be an amount that can indicate the similarity. For example, When the image data is formed by MxN images, the secondary electron line intensity (or feature quantity) of each pixel can be regarded as the position vector component of the MxN dimension space to calculate the benchmark on the MxN degree unitary space Image vector and image 丨 vector Euclidean distance or correlation coefficient. Of course, distances other than Euclidean distance can also be calculated, such as the so-called street distance. In addition, when the number of pixels is large, the calculation is large, so it can also be as described above. Generally, the distance value between image data represented by the mxn feature vector is calculated. Next, it is determined whether the calculated distance value Di is smaller than a predetermined threshold value Th (step 1958). The threshold value Th is obtained experimentally, It is used as a reference for judging that the reference image and the inspected image are sufficiently consistent. When the distance value Di is smaller than the predetermined threshold Th (affirmative judgment in step 1958), it is judged that the inspection surface 1834 of the wafer 1805 is "none Defect "(step I960), and return to this subroutine. That is, if there is one in the inspected image that is slightly consistent with the reference image, it is judged as" no defect ". With this, P ... Matches between all the images being checked for Micro Motion 嶋 A4 specifications⑽Public love ^ ^ --------- (Please read the precautions on the back before filling this page) 539845 A7 B7

V. Description of the invention (Judgment of printing speed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. From the example in Figure 51, it is known that the inspected image in the third row and third column has no position deviation from the reference image. When the distance value Di exceeds the threshold Th (the negative judgment in step 1958), the image number i is incremented by Λ W Feng · Li Feng step 1962), and the incremented figure is judged. Whether the image number (i + 1) exceeds a certain letter value 1max (step 1964). When the image number i does not exceed a certain value iMAY (negative judgment of Step Fun Heart Monster / Step 1964), return to step 1954 again, and read out the incremental image discrimination " ^ 篆 遽 code (1 + 1) Image data, and the same processing is repeated. When the image number i exceeds a certain value __ * / ^ ^ Heart value 1max (affirmative judgment in step 1964), it is judged that the inspection surface 1834 of the wafer 1805 is "defective" (step 1966), and returns to this Subroutine. Also ▽ evil, that is, when all the inspected images are inconsistent with the reference image, it is judged as "defective". The defect inspection apparatus according to the twelfth embodiment of the present invention can be applied to the wafer inspection process (G) in the device manufacturing method described with reference to FIGS. 3 and 4 (a) and (b) m. In this case, even a semiconductor device having a fine pattern can perform a high-accuracy defect inspection without an image obstacle of a secondary electronic image, so that the product yield can be improved, and shipment of defective products can be prevented. . Regarding this point, the descriptions related to FIGS. 3 and 4 (a) and (b) are followed, and therefore descriptions thereof are omitted here. The twelfth embodiment of the present invention is not limited to the above description, and can be arbitrarily changed. For example, although the semiconductor wafer 1 805 is taken as an example of the sample to be inspected, the sample of the present invention is not limited to the wafer. As long as a defect can be detected by an electronic wire, any item can be selected as the sample to be inspected. . For example, you can also form a mask for the exposure pattern on the wafer as an inspection pair. -------- Order --------- (Please read the > i sound on the back first) Please fill in this page again for the items) The paper size is applicable to the national standard (CNS) A4 specification (210x297 cm) 142 312766 V. Description of invention (l43). In addition, the twelfth embodiment of the present invention is also applicable to any device capable of obtaining a pattern capable of inspecting a sample defect. Between the electronic wire source 1801 and the Wiener filter 1803. In addition, even by controlling the field generated by the Wiener filter 1803, the direction of its deviation can be controlled. That is, the Wiener filter 1803 can also be used as the bias electrode 1811.

In addition, the deflection electrode 1811 may be placed between the objective lens 1810 and the crystal circle 1805 ', and may be placed at any position where the irradiation area can be changed by a single electron beam. For example, Rose is placed in the function of Wiener filter 1803 and the objective lens UK. In the twelfth embodiment, when matching image data with each other, either one of matching between pixels and matching between feature vectors is selected, but the two may be combined. For example, initially, feature vectors with a small amount of calculation can be used for high-speed matching, and then the results can be matched with more detailed image data with higher similarity. With this two-stage processing, simultaneous To achieve the purpose of high speed and accuracy. In addition, in the twelfth embodiment of the present invention, although the position shift corresponding to the inspected image is separated by the position of the irradiation area of the electron beam only once, it can also be used in the image data before or during the matching process. In the above, the best matching region search processing (for example, detecting and matching regions with high correlation coefficients) is combined with the present invention. In this way, in addition to using the positional separation of the irradiation area of the primary electron beam of the present invention to correspond to a larger positional deviation of the inspected image, it is also possible to absorb the smaller positional deviation by using the digital image processing in the subsequent stage, so that Improve the accuracy of defect detection. 539845 Member of the Intellectual Property Bureau of the Ministry of Economic Affairs X Printed by the Consumer Cooperative A7 B7 V. Description of the invention (144) In addition, although the structure of Figure 50 is shown on the electronic wire device for defect inspection, the electronic optics department can also do any Moderate change. For example, the electron beam irradiation mechanism (1801, 1802, 1803) of the defect inspection device shown in the figure is a form in which electron beams are incident on the surface of the wafer 1805 once from above, but Wiener can be omitted. The filter 1 803 inclines the primary electron beams onto the surface of the wafer 1805 in an inclined manner. In addition, the processing shown in the flowchart of FIG. 52 is not limited to those illustrated in the drawing. For example, for the sample that is judged to be defective in step 1912, defect inspection in other regions is not performed, but the processing flow may be changed to defect inspection in all regions. In addition, if it is possible to enlarge the irradiation area of the electron beam once and cover almost the entire inspection area of the sample with a single irradiation, step 1914 and step 1916 can be omitted. As described above, the first embodiment to the twelfth embodiment of the present invention have been described in detail. In any of the embodiments, the term "predetermined voltage" refers to the voltage when measurement such as inspection is performed. In addition, in the various embodiments described above, an electron wire is used as the charged particle wire, but it is not limited to an electron wire. A charged particle wire other than the electron wire, or an uncharged neutral strand, laser light, or electromagnetic wave can also be used. Etc. Non-charged particle rays. In addition, once the charged particle beam device related to the present invention is started, the close interaction (particles charged near the surface) will cause the target substance to float 'and be attracted to the high-voltage region'. Therefore, it is used for the formation or bias of charged particle beams. Various electrodes will eventually accumulate organic matter. The organic matter that is gradually accumulated by surface charging will adversely affect the formation of charged particle lines and the formation of deflection mechanisms. Therefore, the organic matter that has been accumulated must be regularly applied to this paper. The national standard (CNS) A4 specification (210x297) is applicable. Ym ^ 312766 -------- 1 --------- (Please read the notes on the back before filling out this page) 539845 V. Description of the invention (⑷) The accumulated organic matter is removed, and the plasma near the accumulation area of the organic matter can be used to make plasmas such as nitrogen, oxygen or fluorine and the substitutes including hF, h20, CmFn in a vacuum, The plasma potential in the space is maintained at a potential (several kV, such as 20 V to 5 kV) at the electrode surface, and organic matter is removed by oxidation, nitrogenization, and fluorination. [Industrial use is possible [Properties] According to the present invention, as can be understood from the first embodiment, it is possible to further improve the production rate of good products by providing an inspection device using charged particle beams. The present invention, such as from the second embodiment All you can In general, the following special effects can be achieved: 1. The overall structure of the inspection device using the imaging projection method of charged particle beams can be obtained, and the inspection object can be processed with a high quality manufacturing rate. 2. The clean gas can be cleaned in a small environmental space. The inspection object is filled to prevent the adhesion of dust, and a sensor for observing the cleanliness can be installed to monitor the inspection object while monitoring the dust in the space. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 3. Since the loading chamber and the working room are integrally supported by the vibration prevention device, it is possible to supply and inspect the inspection object of the table device without being affected by external influences. 4. Since the charging device is provided, even the Wafers formed of insulators are also less susceptible to charging. The present invention, as can be understood by the third embodiment, can achieve the following special effects:

539845 A7 __B7 V. Description of the invention (147 The surface of the insulating material is processed into a wrinkle, thereby reducing the processing cost. 6. Because of the shortest creepage distance between the electrodes of the insulating material, the electrode separation in the electrode portion of the blood receiving branch ❹β expertise, so there is almost no unevenness on the surface of the two materials 绝 between the electrodes, and the gas released from the insulating material will not increase, so the vacuum degree of the beam path of the device will not be reduced. Reduction times :::: _ The state can be understood in general-the energy distribution of P βν or the secondary charged particle line can be achieved; the special effect of the influence of chromatic aberrations produced by the cutter. The present invention 'as can be achieved by the sixth embodiment Comprehension-general, the following special effects can be achieved. · Jing ^ Yuncheng 1 · Since there is no need to use crying, it is used to measure the optical south of the surface; Good words = can be between the object lens and the sample ， Only with the electronic optics system 2. Because the focus of the detection system can be detected only by low-voltage adjustment and tracing, it can be calculated that the focus can be performed within the time of the electron particle ray. ^ ^ 间 ' That is, in the short 3. Can be 'in progress as needed' At the same time as the focus operation, non-point correction is also performed in the Mori. 4. Because the yield rate of the manufacturing process lifting device can be evaluated in a short time. TtLJ here is the following: Invention 'such as by the seventh embodiment As can be understood, generally, the following special effects can be achieved: ^ ^ 1 · In order to install piezoelectric elements on the structure through mechanical structure, and to 'receive the force', 147 ( (Revision page) 312766 539845 A7 -------— B7 ____ V. Description of the invention (148) {Please read the precautions on the back before filling this page) Electrical vibration damping circuit is electrically connected to With this piezoelectric element, even if the rigidity of the structure cannot be improved, it is possible to moderately reduce unnecessary vibration caused by resonance of the structure for positioning the light beam while maintaining high-precision beam positioning. . 2. Therefore, it is possible to ease design constraints, reduce the size and weight of the device, and improve economic efficiency. 3. By using the above-mentioned charged particle beam device 'in the manufacturing process of a semiconductor device, effective manufacturing, inspection, processing, and observation of the semiconductor device can be performed. According to the present invention, as can be generally understood from the eighth embodiment, the following special effects can be achieved: 1. The electrostatic chuck and the combination of the wafer and the electrostatic chuck can be used to attract and hold the voltage required for the wafer. Since the voltage is applied as the wafer is applied, the wafer can be reliably held and held until the wafer inspection is completed. 2. A wafer with a recess in the center of the chuck side can be reliably held in front of the wafer. In addition, the discharge traces formed on the wafer are also limited to the minimum size required for the clothing consumer clothing cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs to produce clothing, and the particles generated during discharge are extremely small. 3. Using the electrostatic chuck and the combination of the wafer and the electrostatic chuck of the present invention in a device manufacturing method, the wafer is reliably held and held on the electrostatic chuck of the mobile station during the inspection, and furthermore, This enables semiconductor devices with fine patterns to be inspected at a high yield rate, and all inspections can be implemented to improve product yield and prevent shipment of defective products. The present invention, as can be understood by the ninth embodiment, can reach the cost. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public love). 148 312766 539845 A7 5. Description of the invention (l49) The following special effects : 1. The table device can perform high-precision positioning in a vacuum, and the pressure at the irradiation position of the charged particle beam is not easy to rise. That is, the sample can be subjected to charged particle beam processing of the South precision. -2. The gas released from the support of the static pressure bearing can hardly enter the side of the τ-electron beam irradiation area through the partition. Thereby, the degree of vacuum at the irradiation position of the charged particle beam can be more stabilized. 3. The released gas does not easily pass through the side of the charged particle beam irradiation area, so it is easier to maintain the vacuum of the charged particle beam irradiation position in a stable manner. Order 4. The vacuum chamber is divided into a charged particle beam irradiation chamber, a static pressure bearing chamber, and three chambers of the middle chamber by a small conductance. The dust of each chamber is arranged in a low order as a charged particle beam irradiation chamber. The intermediate chamber, the static pressure bearing chamber, and the vacuum exhaust system are structured in this way, so the pressure fluctuation of the intermediate chamber can be controlled by the partition plate to be lower 'and the pressure line fluctuation of the charged particle beam irradiation chamber'. It is possible to control the lower-layer partition plate to lower the dust force variation to a level that does not cause any problem. 5. It can restrain the pressure rise when the table moves. 6. It can control the pressure rise when the table is moved to lower it. 7. With high-precision positioning performance of the worktable, and at the same time, it can realize the inspection device with stable vacuum degree in the irradiation area of the charged particle beam, so it can provide an inspection device with inspection performance and without contaminating the sample. 8. With the positioning accuracy of the table with the accuracy of the south, and at the same time, it can realize the exposure device with a stable vacuum degree in the irradiation area of the charged particle beam, so it can provide an exposure device with high exposure accuracy 'and without contaminating the sample. This paper is suitable for the national standard (JNS) A4 specification (210.5, the description of the invention (iso) 9. By using a high-precision table positioning performance and a stable band device to manufacture semiconductors, it can be formed Fine (please read the precautions on the back before filling this page) The present invention, as can be understood by the tenth embodiment, can have the following special effects: 1_ Use has a static pressure that is generally used in the atmosphere Bearing-type worktable with the same structure (static pressure bearing support workbench without differential exhaust mechanism) can perform stable charged particle line processing on the sample on the guard table. 2 • Dongzi charged particles can be charged The influence of the degree of vacuum in the line irradiation area is controlled to a small extent, and the sample processing by the charged particle beam is stable. 3. The high-precision table positioning performance can be provided at a low price, and the vacuum in the charged particle beam irradiation area is vacuum. An inspection device with high stability. 4. It can provide a high-precision table positioning performance at a low price and an exposure device with a stable vacuum level in the charged particle beam irradiation area. 5. By using Using a device with high-precision table positioning performance and a stable vacuum in the area irradiated by charged particles to produce semiconductors, it is possible to form fine semiconductor circuits. The Intellectual Property Bureau, Ministry of Economic Affairs, Employee Consumer Cooperative, printed this invention, such as by the 11th As can be understood by the embodiment, the following special effects can be achieved: 1. The throughput can be increased to a multiple equivalent to the amount of the optical coefficient. 2. The wafer can be evaluated under the state of minimum charge, so high reliability can be obtained. Evaluation 3. Charging performance is based on actual image evaluation, rather than evaluation by measuring various currents, so a more accurate evaluation result can be obtained. Sheet size standard (CNS) A4 specification ⑽χ 297 $ 150 JTZTbb 539845 2. Since the above defect inspection device is used for sample defect inspection, it can improve product yield and prevent the shipment of defective products. [Element Symbol Explanation] Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs

A7 V. Explanation of the invention (⑸) The present invention, as can be understood by the 12th embodiment, can achieve the following special effects: 1. Because the plural inspected areas that partially overlap and are mutually displaced on the sample are obtained, respectively. And inspect the defects of the sample by comparing the images of the inspected area and the reference image, so that it is possible to prevent the reduction of the defect inspection accuracy caused by the position deviation between the inspected image and the reference image. Semiconductor inspection device Cassette supporter Lifting platform lifting mechanism Small environment installation Small environment empty casing Gas circulation device discharge device Pre-aligner gate device Wafer transfer box opening Main casing Working case casing Main casing support mounting support device Bench ^ -------- t --------- (Please read the notes on the back before filling out this page) 539845 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Explanation (152) 40 4 Bu 42 47 49b 50 51, 52, 53, 54 55 60 61 63 7 0 7 Bu 2 '74, 76, 81 83 85 87 100 221 222 223 225 231 232 233 241 1330 1605 1604 1216 1561 1571 1730 1346 1710 1720 1501 2005 301 322 321 323 226 432 321a-431 433 325, 434 '243 > 244 Loading housing Loading chamber Wafer rack Hanging element workbench device Fixing table Y table X table Rotary table holder loading 1st transfer device 2nd transfer device Electro-optical device 1601 Lens barrel Primary optics Secondary optics detection system Pre-charge device Potential application mechanism Electronic wire calibration mechanism Calibration control device Box top wall Bottom wall peripheral wall 435 436, 437 Recovery inlet and outlet gas supply device Catheter suction device First read the items on the back and then fill in the page Paper size applies + National Standard (CNS) A4 size (210x 297 cm) 152 312766 539845 A7 B7 V. Description of the invention ( 153) 242 271, 451 272, 452, 461 273, 453 331, 336b 331a 434 ^ 435 471, 472 473, 501 502 503 505 506 521, 522 ^ 1512, 1514, 1516, 1519, 1526 1405 474 531 532 Ministry of Economic Affairs Printed by the Intellectual Property Bureau's Consumer Cooperatives 541, 551 611 612 613 721, 10 (H, ll (H, 12 (n, 1301a, 1431, 1562 ^ 1711, 1801, 2501 7 22, 74 1109, 1110, 1112 1113, 1 5 63, 1564, 1567, 1568, 1 572, 1573 723, 1105 '121, 1566 > 1715, 1 803 > 2010 724 725, 1004, 1010, 1020, 1022, 1106, 1126, 1127, 1128 , 1213, 1339, 1352a, 1352b, 1444, 1566 small 1719, blower closed door drive device frame structure rectangular steel plate partition plate opening substrate pillar support box main body wafer removal entry cover ULPA filter Learning filter server decoder wafer mounting surface drive section multi-section robot arm axis electron beam source lens Wiener filter object lens system electrode (please read the precautions on the back before filling this page) Applicable to China National Standard (CNS) A4 specification (210 X 297 male *) 153 312766 539845 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Invention Description (154) 2030a, 2030b 726 ^ 1416 761, 1731 > 1807 763 ^ 1115 765 '833 to 873 81 1502, 1602 831 832 834, 1762 835 > 1763 > 2017 851' 852 871 901 902 903 904 905 907, 911 908 909 910 912, 1208, 1712 913, 1121, 1122 , 1134, 1206, 1307, 1436 914, 1123, 1124 915, 1209, 1210, 1438, 1442, 1565, 1718 916, 1212, 1308, 1443, 1716, 1810 917 918, 1026 1000 power detector image processing unit Monitor electron beam irradiation unit voltage application device voltage determination system processor CPU Faraday cup optical microscope electron beam source chamber bellows TFE cathode Schottky shield thermal field release type electron Source Screw Hole Tube Lens · Positioning Condenser Lens Opening Plate Reduction Lens Diverter Object Lens Exhaust Hole Insulation Spacer Camera Projection Evaluation Apparatus (Please read the precautions on the back before filling this page) This paper size applies to Chinese national standards (CNS) A4 specification (210x 297 mm) 154 312766 539845 A7 Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Cooperation Du printed B7 V. Description of the invention (156) 1218 2nd power supply 1219 3rd power supply 1220 Department of Electronic Line Scanning and Inspection 1301 Electronic wire inspection device 1302a Rectangular opening 1302b 4-pole lens 1304, 1507, 1804, 2006 Table 1310 Aperture 1311 Projection electrostatic lens 1313, 1813 Reference image memory 1313 Control unit Host 1315, 1815 CRT 1316, 2031a, 2031b Control unit 1317 Secondary electron line image 1318 Input section 1319, 1809 Defect detection program 1320 Two under electron line image memory area 1321, 1850 Channel board 1322 Screen 1323, 1854 Relay lens 1324 Camera section 1325 Actuator 1327 Subtract Vibration Circuit 1331 > 1832 Image 1332 1333 Wafer image 1334 Actual pattern 1335 Actual secondary electron wire 1336 Intensity signal 1337 Threshold level 1338 Wide 1340 Potential surface This paper standard is applicable to Chinese national standard (CNS > A4 specification (210 X 297 public love) 156 312766 丨 j ---------- Installation -------- Order --------- (Please read the precautions on the back before filling this page) 539845 A7 B7 V. Description of the invention ( 157: 1341, 1342 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1343, 1350 1351 1354 1356, 1358 1360 1382 1384 1386 1388 1401 1402 1403 > 1404 > 1406 1410 1412 1433, 1440 1441 1503, 1504 1504-1 1505 1506 1506a 1509, 1510, 1620b 1674, 1344 1414 > 2056 1805 2104 1435 1603 > 1740 1626 1 507a 1609a, 1609b, 1611a, 1611b 1511, 1523, 1619, 1620a, _ 1670 '1671, 1672, 1673, 1675 Piezo element, electromotive support, resistance, variable inductance, in-line resonance circuit, transfer function, electrical frequency sum, transfer function, vibration, first electrode, second electrode, wafer insulation layer, contactor, electrostatic loss, electrode plate, shaft pair The secondary electronic wire of the instrument detects the shielded XY stage sample stage ring member Y direction movable stage X direction movable stage guide surface static pressure bearing vacuum piping • I ---------- II --- (Please read first Note on the back, please fill out this page again). | Line-This paper size is applicable to China National Standard (CNS) A4 (210 X 297 public love) 312766 157 539845 A7 B7 丨 Bu 丨 丨 丨 丨 丨 丨 丨 丨 1111111 — — — — — —— — — (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (158) 1511-1, 1511-2 1513, 1515, 1524 1517, 1518 1520 1521 1522 1527 > 1528 1529 1530 1550 ^ 1551 1552 1560 1607a, 1607b 1608a, 1608b 1612 > 1613 1616 1618, 1628 1621, 1622 1625 1627, 1627a, 1627b 1630 1640 1651, 1652 1653 > 1654 、 2316 1660 166b 1662 1663 1676 ^ 1677 ^ 1678 ′ 1701 1711-1 Vacuum exhaust passage space Double groove circumferential groove Exhaust passage internal space member support member Freezer aperture gap Gap optics Y direction guide device X-direction guidance device Linear motor pedestal Exhaust port Flexible piping Differential exhaust mechanism Ring groove electron beam irradiation space Fine-gap turbo molecular pump dry vacuum pump compressor Wave regulator Regulator high purity inert gas supply system, 1680 piping electron beam device Cathode This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 158 312766 539845 V. Description of the invention (159) Printed by A7 B7 1712-2 A7 B7 1712-2 round hole 1712-2 1 Main body 1712-3 to 1712-5 Plate portion 1712-6 to 1712-8 Metal coating film 1712-9 Electrode mold 1714, 1717 Alignment device 1732 Amplifier 1733 Image forming unit 1741 Support frame 1750 Delay voltage application device 1760 Delay voltage determination system 1761 Display 1770 Chip 1771 Memory cell 1772 Memory cell limit 1763 > 1774 Pattern offset 1775-1777 Solid line 1776 、 1778 contrast 1802 > 1806 Electrostatic lens 1808 Storage area 1811 Biased electrode 1812 Biased controller 1814 Control Department main body 1816 Process execution inspection department 1817 Flow generated image 1830 Wafer inspection circular case 1832a to 1832k Rectangular area 1834 Wafer inspection surface 1836 Reference image 1852 Fluorescent surface 1856 CCD camera sensor This paper is scaled to Chinese National Standard (CNS) A4 (210x297) ) 159 312766 (Please read the notes on the back before filling this page)

Claims (1)

539845 Printed by the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs of the People's Republic of China No. 90115565 Patent Amendment Application Patent Range Amendment (December 24, 91) 1 * A sheet-type beam inspection device, which is characterized by: Examination room; The sheet-shaped beam generating device is a sheet with a certain width of charged particles or ions or electromagnetic waves from the aforementioned inspection object held in the aforementioned inspection room and having energy for taking out secondary charged particles. A single irradiation beam is emitted; the electronic optics system can guide the beam to the aforementioned inspection object, capture the secondary charged particles generated by the aforementioned inspection object, and guide it to the image processing system; the image processing system can be borrowed A visible image is formed by the projection of the secondary charged particle beam; the information processing system displays and / or stores the state information of the inspection object according to the output of the image processing system; The aforementioned electro-optical system holds the inspection object in a relatively movable manner. 2. The sheet-shaped beam inspection device according to item 1 of the patent application scope, further comprising: a moving-in / out mechanism that can maintain the aforementioned inspection object and carry it in and out of the inspection room. 3_ If the sheet-shaped beam inspection device according to item 2 of the scope of patent application, the aforementioned transport mechanism is provided with: a clean gas can be injected into the aforementioned inspection object to prevent dust from attaching to the paper Chinese National Standard (CNS) Α4 ^ 21 () χ 297ϋ 1 312766 539845 The small environmental device is equipped; it is arranged between the small environmentally affected fish bream, +, t 丄 罝 /, and other inspection rooms, and can control most of the loading chambers in a vacuum state; The first transfer device for transferring inspection objects between small-scale environmental devices; the second transfer device for transferring inspection objects between one of the loading chambers and the other inspection rooms; The vibration blocking device of the loading chamber is supported to support the aforementioned inspection room spotted arrowhead. 4_ = The patented sheet-shaped beam inspection device, wherein the inspection room includes: an anti-vibration device that prevents vibration of the inspection object; and a vacuum device that maintains the inspection room in a vacuum. 5. For the sheet beam type inspection device according to item i of the patent application, in i, the inspection room is equipped with a potential application device, a pre-charging device that can reduce the uneven charging of the inspection object and / or The inspection object is applied with a potential. Printed by the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs 6: A sheet-shaped beam type inspection device, which is characterized by having: It is arranged in a partition plate that introduces charged particles, ions, or electromagnetic waves irradiated by a plurality of line sources into the front section of the aforementioned electro-optical system, and has relatively large vertical and horizontal pores through which the charged particles or ions or electromagnetic waves can pass. 7. The sheet-shaped beam inspection device according to item 6 of the patent application scope, in which the paper size is in accordance with Chinese National Standard (CNS) A4 (21 () χ 297) 312766 539845 The aforementioned pore system is set in plural On each line source. 8. The sheet-shaped beam type inspection device according to item 7 of the patent application scope, wherein the aperture is formed at a position other than the irradiation axis of the line source. 9. The sheet-shaped beam inspection device according to item 6 of the patent application scope, wherein the partition plate is formed of a material having high rigidity. 10. The sheet-shaped beam inspection device according to item j of the patent application scope, wherein the device has an electro-optical system including an electrostatic lens. • For example, the sheet-type beam inspection device under the scope of patent application No. 10, wherein the electrodes in the aforementioned electronic optics are metal cladding with a power function of 5ev or more. 12. The sheet-shaped beam type inspection device according to item 11 of the scope of patent application, wherein 'the metal is platinum or a combination of platinum. Printed clothing of the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs. For example, the sheet-type beam inspection device under the scope of patent application No. 10, wherein the aforementioned electrostatic lens includes a plurality of electrodes having a potential difference, and is located between the electrodes. The insulating material that can be used to hold the electrodes, at least one of which has not only the shortest distance between the electrodes! The electrode surface, and the second electrode surface having a longer distance between the electrodes than the first electrode surface, and there is a step between the two electrodes; the insulating material is located between the second electrode surface and the other electrodes, and is supported in a slightly vertical manner The shortest creepage distance between the electrodes and the electrodes of the foregoing insulating material is slightly equal to the distance between the electrodes of the electrode portion of the aforementioned branch. 14. The sheet-shaped beam inspection device according to the scope of the patent application, which has a secondary charged particle line used to release the aforementioned inspection object from a 312766 paper standard commonly used by China National Standards (CNS) People 4 Regulations (21Gx 297 public love: 539845 iL y, current / year Λ Η 3 times of irradiation beam separation Ε Χ Β 分 ΛΛ # ^ book ionizer or Wiener filter, the aforementioned one-person ▼ electric particle line The εχΒ separation of the seven secrets, the magnetic, LH-^ °, or dimension, the magnetic bias of the internal filter into the deflection direction of the electric field and the deflection direction of the electric field can also be used for the magnetic optical system 'A plurality of irradiation beams can be irradiated to the inspection object to release secondary charged particles, and the secondary charged particles can be guided to the aforementioned image processing system. The beam type inspection device includes: = .. Department of Electronics, and the Department of Electro-Optics' includes: measuring radon, measurable radon is related to the excitation voltage on the objective lens, and is used to indicate that f is parallel to the first direction When the edge of the pattern moves to the second direction The second data of the rising of the charged particle line signal waveform; and the second data indicating the rising of the second charged particle line signal waveform when the edge of the pattern parallel to the second direction is moved to the first direction; Ministry of Economic Affairs; The Central Bureau of Standards Employee Welfare Committee printed the undercontrol device 'can first approximate the first data and the second data' in a quadratic form, and determine the activation conditions of the objective lens that shows the minimum value of each quadratic form At the same time, the algebraic average of the above-mentioned excitation conditions obtained by combining the above-mentioned excitation voltage of the objective lens is obtained. 17. For example, the sheet-beam type inspection device according to item 16 of the patent application scope, wherein the control device further includes: Correction device with astigmatism. 18_ For example, the sheet beam type inspection device under the scope of patent application No. 16 has a first objective electrode which is provided with a voltage close to ground; And the 帛 2 electrode, which is applied with a voltage away from ground, This paper scales Guzhengguan Miscellaneous Standard (CNS) A4 ^ 7210 x 297 mm 4 312766 539845 series of sheet-type beam inspection devices, which are equipped with: Can be applied to the first by changes! The voltage of the electrode changes the mechanism of the focus on the objective lens; and the mechanism of changing the voltage applied to the aforementioned electrode and changing the focus distance of the objective lens within a short time. 19. The sheet-shaped beam inspection device according to item 丨 of the patent application, which includes: a mechanical structure for determining a position at which an irradiation beam is emitted to the inspection object; and vibration reception of the mechanical structure A powerful piezoelectric element; and a circuit for reducing vibration that electrically connects the piezoelectric element to reduce the output of electrical energy. 20. The sheet-beam type inspection device according to item 19 of the scope of patent application, wherein the aforementioned vibration reducing circuit can be used in addition to an inductive device having an inductance element or an equivalent circuit of the element. The piezoelectric element having an electrostatic capacity is connected to form a resonance circuit, and the inductance of an inductive device corresponding to the electrostatic capacity of the piezoelectric element is determined so that the resonance frequency of the resonance circuit can be exactly consistent with the frequency of the mechanical structure. Printed by the Staff Welfare Committee of the Central Bureau of Standards, Ministry of Economic Affairs 21. If the sheet beam type inspection device in the scope of patent application No. 20 is used, a resistor element is also included in the circuit for reducing vibration. 22. The sheet-shaped beam inspection device according to item 2 of the patent application scope, which is provided with an electrostatic chuck; the inspection object can be reduced from the applied voltage θJ to the threshold value, so that the inspection object is compatible with the inspection object. The applied voltage is applied to the electrode in association with the applied voltage, and the aforementioned inspection object is electrostatically held and held. 23. If the sheet beam inspection device of item 22 of the patent application scope, the paper size is applicable to the Chinese National Standard (CNS) M specification (21〇 > < 297) 312766 539845 The electrode just described is divided into: the first electrode formed by the central part and the peripheral part of the-part; and the first electrode formed by the remaining part 'and having: applying a voltage to the first electrode, and then letting The electrostatic chuck that applies a voltage to the second electrode after the inspection object becomes a low potential or a ground potential. / 24. As stated in the claim 22 of the patent for the sheet-shaped beam ^ check & fq 'The electrostatic chuck described above is composed of electrodes and insulators overlapping, the aforementioned inspection object is applied through the-^ resistance and contactor A shape in which the front end of the contact sub-system is in contact with the inner surface of the inspection object at a voltage.乂 25 · If there is a sheet-beam type inspection device according to item i of the patent application scope, which includes: a control mechanism of a table; and the mechanism includes a position for determining the inspection object corresponding to the aforementioned electro-optical system And a calibration control device that observes the inspection object to control the calibration; and a laser interference type ranging device that detects the coordinates of the inspection object on the workbench, using the calibration control device, The coordinates of the inspection object are determined based on the pattern of the inspection object. Printed by the Staff Welfare Committee of the Central Bureau of Standards of the Ministry of Economic Affairs. 26. For example, the sheet-beam type inspection device in the scope of patent application No. 1 has a worktable; it can correspond to at least the above-mentioned electronic optics department, and maintain the above with 2 or more degrees of freedom The object to be inspected is provided with a non-contact indicating mechanism using a static pressure bearing and a vacuum sealing mechanism using a differential exhaust gas. The position where the beam of the object to be inspected is irradiated and the static pressure bearing of the table are provided. Between the support parts, a separating device for reducing inductance is provided, and a pressure difference can be generated. This paper size is in accordance with Chinese National Standard (CNS) A4 (210 x 297 mm) 6 312766 84 9 3 5 ______________H3 _ 27_ If the sheet beam inspection device in the scope of the patent application No. 26, where the aforementioned partition device Hidden differential exhaust structure. 28. The sheet-shaped beam inspection device according to item 26 of the patent application, wherein a cold trap function is built into the aforementioned partition device. 29. The sheet-shaped beam inspection device according to item 26 of the patent application, wherein the aforementioned partitioning device is provided at least in the vicinity of the sheet-shaped beam generating device and near the static pressure bearing. 30. The sheet beam inspection device according to item 26 of the patent application, wherein the gas supplied to the aforementioned static pressure bearing is dry nitrogen or inert gas 31. The sheet beam inspection device according to item 26 of the patent application The device in which the gas supplied to the static pressure bearing is discharged from a housing that houses the table, is pressurized, and is supplied to the static pressure bearing again. 32. The sheet-shaped beam inspection device according to item 26 of the patent application, wherein at least the surface of the part facing the aforementioned static pressure bearing is subjected to a surface treatment to reduce outgassing. Printed by the Staff Welfare Committee of the Central Bureau of Standards of the Ministry of Economic Affairs 33. The sheet beam type inspection device according to item 1 of the scope of patent application, which includes an electronic optics system; the electronic optics system has the following characteristics: A voltage delay voltage application device; a control mechanism for applying the most appropriate delay voltage; and a lens having a metal layer on the surface of the insulator. 34. For example, the sheet-shaped beam inspection device of item 33 in the patent application, wherein the aforementioned lens is processed with an integral insulator to make it axisymmetrically transparent. This paper is compliant with China National Standard (CNS) A4 specifications (210 X 297 mm) " " ~~ 7 312766 539845 Η3 mirrors. 35. The sheet-shaped beam inspection device according to item 33 of the patent application scope, wherein the control mechanism for applying the aforementioned most appropriate delay voltage includes a charging investigation function unit capable of measuring the state of charge of the inspection object; Based on the output information of the charging investigation function unit, the most appropriate delay voltage can be determined, and the delay voltage can be applied to the inspection object or changed to the most appropriate beam current. 36. The sheet beam type inspection device according to item 33 of the patent application scope, wherein the charging investigation function unit is based on a map of a specific part of the inspection object when a secondary charged particle beam is detected and an image is formed. The magnitude of image shift or image blur is used to evaluate the state of charge of the inspection object. 37. According to the sheet beam type inspection device according to item 33 of the patent application scope, the charging investigation function unit may change the method to apply a delay voltage to the inspection object, and a plurality of delay voltages are applied. 'Perform image formation near a realm where the image density of the inspection object varies greatly. Printed by the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs 38. For example, the sheet beam type inspection device of the 37th scope of the patent application, which includes: an image display device; can display, so that the calculator can evaluate the formation of the aforementioned image. 39. The sheet-shaped beam inspection device according to item 1 of the patent application scope, further comprising: an image acquisition device having an image of each of a plurality of inspection areas of the inspection object; and an image acquisition device for storing the reference image. Image processing system of this image; This paper ruler China 312766 539845 H3 ^ and the information of judging the state of the aforementioned inspection object by comparing the image of the inspection area with the reference image. The sheet-shaped beam type inspection device obtains an image of an inspection area obtained by the image processing device described above, and obtains the inspection object by partially overlapping the surfaces and changing the surfaces. 41. The sheet-shaped beam type inspection device according to item 39 in the patent scope of claim 2, wherein the aforementioned image processing system is used to detect secondary charged particles and sequentially obtain images, and has a screen and a microcomputer. Road boards. 42. The sheet-type beam inspection apparatus according to item 41 of the application, wherein the image processing system obtains a fluorescent image by a solid-state imaging device (CCD) camera. 43. The sheet-beam type inspection device according to item i of the patent application, further comprising a beam deflection device that can form a single irradiation beam or deviate to the single irradiation beam to sequentially irradiate the inspection object. 44 · If the scope of patent application is the first! In the sheet-shaped beam inspection device according to the item, the inspection object is a wafer or a semiconductor element, and the device is used to inspect its defects. Printed clothing by the Staff Welfare Committee of the Central Standards Bureau of the Ministry of Economic Affairs 45. For example, the sheet beam type inspection device of the scope of application for patents, where the inspection target is a loop wiring defect, line width measurement, calibration accuracy measurement, and potential Comparative determination of at least one selected. 46 · A semiconductor device manufacturing device, which is provided with a chip-beam type inspection device for applying for the evaluation of the wafer and even the evaluation of semiconductor elements in the first patent application scope. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 9 312766 539845 Printed by the Staff Welfare Committee of the Central Bureau of Standards of the Ministry of Economic Affairs 47. For example, the sheet-type beam inspection device of the scope of patent application, wherein the aforementioned charged particle line is an electronic wire. 48. The sheet-shaped beam inspection device according to item 1 of the patent application scope, comprising: an electron optics system for accelerating secondary charged particles by a decelerating electric field type object lens; and an electron optical system for projecting the image Department of Image Processing. 49. If the scope of patent application is the first! Item of sheet-shaped beam type inspection device, which replaces the sheet-shaped one-person irradiation beam, and irradiates primary charged particle beams by a plurality of line sources, and detects secondary charged particles by a plurality of detectors. 50 species The manufacturing method of a semiconductor device is to process, manufacture, observe, or inspect a wafer or a semiconductor element by using a sheet-beam type inspection device of the patent application scope item 丨 for evaluating a wafer or a semiconductor element. 5 1 · — An exposure method, which uses a sheet-beam inspection device of the i-type patent application to trace the circuit pattern of a semiconductor device on a wafer or a grating. 0 This paper is in accordance with China National Standard (CNS) A4 Regulations (210 X 297 mm) 10 312766 539845 # (if iE J} (this year is * 2015 2004 2001 Χ / " " " 7Τ / 2018 secondary cylinder, 5-system device | 2019 3 2 1 1 ~ ^ — ** ^ ο ο ο 2 2 2… control device 2002 2014 2010 2009 2016 2007 2003); I ^ 2006 I r: table driving mechanism CPU ^ 2020 ^ 2017