TW522532B - Schemes for detecting bonding status of bonding wire of semiconductor package - Google Patents
Schemes for detecting bonding status of bonding wire of semiconductor package Download PDFInfo
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- TW522532B TW522532B TW089123513A TW89123513A TW522532B TW 522532 B TW522532 B TW 522532B TW 089123513 A TW089123513 A TW 089123513A TW 89123513 A TW89123513 A TW 89123513A TW 522532 B TW522532 B TW 522532B
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
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- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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Description
522532 五、發明說明(1) 發明背景 元Γ封!㈠,與被封裝 的電連…通常係經過二:2:以=球銲 J元成銲線銲接後測試其是否良好(例如,iUf,應 t現象)。如圖1所示,辉線35 銲線不 係,著機器將銲爾接於半導體元件 =:1的電連 ^lng Pad) 6 ;手指10,然後被機器在其適當 ^於銲 :銲接於銲接手指10的位置18之偏左處二圖:, =銲針24繼續將另一段銲線銲接於半導體元件乂便—機器 墊。在銲針24完成銲接銲線35於銲墊6 哭—銲 電壓(電位幻於銲線35與機器熱:4機之== ^ ^電流通過、銲線35 (銲針24與銲墊6之間的一俨、 写妖:,、半導體元件1、導電黏接層2、散熱裝置3、:. 态熱板14回到機器而形成一迴路(ι〇〇ρ ) 機 示的f頭線45、46、47等所指方向係可能的二種電斤 ) 右~線3 5與銲墊6的銲接不良(例如銲線不著) 口 電流將極小或甚至可忽略不計;反之該迴路電么 正韦值,而可供判定銲線35與半導體元件1 马 狀態良好。 j W包連接 "增又如圖2所示的一種習知技藝,其為增加散熱裝置3盥 半導體元件1、封膠體(encapsulant )、基板7等之間的、 黏接力,在散熱裝置3的一表面塗上一黑化處理層4 (3即氧
第5頁 522532
化銅 Cupr i c Οχ i de ) 該迴路電流無法形成 方向不存在於圖2中, 體元件之間的電連接 劣。 ’其係不導電物質,故導致上述的 ’如圖1所示箭頭線4 7所代表的電流 這使得晶片封裝體中的銲線與半導 狀態,無法在封裝作業中被測出其良 雖然美國專利案第 係用來測試半導體元件 條件為,晶片與其載具 上的裝置可以做為迴路 處理層4存在或魏接層2 用。本案因此被發展出 I占接層導致銲線銲接狀 既能利用該黑化處理層 陣列或類似於球栅陣列 接狀態,更能夠較方便 銲接狀態之測知。 5712570 與5893508 封裝中的銲線連接 (例如基板、散熱 電流的通路。若如 為不導電,則此兩 以解決,該黑化處 態無法測知的難題 所提供的優點,又 的封裝銲線接合作 、較有規則、較有 號所示技藝,亦 狀態,但其適用 片等)或其載具 圖2所示的黑化 前案技藝就不適 理層或不導電之 ,其使相關業界 仍然能夠在球栅 業中測知銲線銲 彈性地執行銲線 發明說明 (似ί案=的之一在於,提供一種球柵陣列或其類似封裝 面去,:片與封裝件之對外連接所用銲墊位於基板同一 合機二!!:銲接狀態檢測的方法,以配合封裝銲線接 地ί:ϊί·:較方便、較有規則、車交有彈性、較不受限 銲J t,、t¥體元件與其載具之間可以完全絕緣)測出 ^狀態,尤其是在銲線接合作業中就測出,而能夠
五、發明說明(3) 盡早彌補銲接狀態之不良 本案目的之二在於, 一 統,用以配合封穿銲魂人/、一種測知銲線銲接狀態的系 則、較有彈性、= : =作ί,較方便、較有: 合作業中就测出,而能其是在銲線接 本案目的之三在於,^爾補#接狀您之不良。 案,供球柵陣列封穿 一種測知銲線銲接狀態的方 擇適合的銲線銲接㈣挪知:::對::要求或條件,選 =導體元件之間的銲 式要测出銲線 =J間的電連接狀態者”戈兩樣:匕::二銲線與錫球 者視情況彈性選擇。 篇要者等可由個別業 章,線銲接狀態檢測系統係配合—料… 半導體元件與至少一二=:二該封裝體包含至少— 本案這銲線狀態檢測系統主要(例如錫球銲墊), $至少—載具,例如一基板、或—散埶κ 或任何可以支持半導體元件、 ^:片、或一膠帶、 至少-導電材料,接觸至少=外銲接區之物體; 至少-前置連接線,例如一導=§;裝連外銲接區; 手指、銲線等構成)、一電 ,、带可以由走線、銲接 外銲接區與該半導體元件;接該任選的封裝連 ::或交流電源、或—電容等,】 j置,例如一直 材料與該鲜線之間;-摘測裝置,例二於該導電 522532 五、發明說明(4) 、:干^接a作業元成銲接該銲線於該半導體元件、該錫球銲 ,f兩者中之至少一者時,測量通過該電位差產生裝置的 %抓1並且根據該電流而產生至少一狀態指示信號,該狀 態指示信號反應該銲線銲接狀態。 增帝^述該導電材料可以係導電金屬、導電橡皮、異方性 導電膠膜(Anisotropic Conductive film)等之中的任 何一種或至少一種所構成。 本案銲線銲接狀態檢測方法係配合一銲線接合機器, f檢測球栅陣列或類似封裝中半導體元件與封裝連外銲接 區(例如錫球銲墊)間的銲線連接狀態,該半導體元件、該 錫球銲墊由至少一載具所支持,該半導體元件的電連接裝 置(例如銲墊wire bonding pad )暴露於外,本案這種銲 線銲接狀態檢測方法主要包含下列步驟: 、, 任選至少一该錫球銲塾(例如多個鮮墊中的一者), 並且以一導電材料接觸之;電連接該任選的該錫球銲墊鱼 該半導體元件;讓該銲線接合機器的壓板接觸該導電材,、 1,當該銲線接合機器完成銲接一銲線到該半導體元件 時堵施加一電位差於該壓板與該銲線;測量通過該壓板, 遠夺電材料或該銲線的電流,並且根據該 一狀態指示信號,該狀態指示信號反應該銲㈣該U = 儿件之間的銲接狀態。 ’ “ίϊ的導電材料可以係導電金屬、導電橡皮、異方性 二二膠 (Arusotropic Conductive nim)等之中的至 少一者所構成。 522532 五、發明說明(5) 圖式簡介 圖1、2說明習知技藝。 圖3、4、5說明本案實施例。 圖號說明 1 半導體元件 2 導電黏接層 3 散熱裝置 4 黑化處理層 5 前置連接線 6 半導體元件的銲墊 7 基板 8 錫球銲墊 9 銲錫拒銲劑(S ο 1 d e r M a s k )
10 鲜 接 手 指 11 壓 板 14 機 器 熱 板 16 半 導 體 元 件 的 銲 墊 18 銲 線 銲 接 到 銲 接 手指的位置 19 導 電 材 料 21 電 位 差 產 生 裝 置 22 偵 測 裝 置 23 狀 At m 指 示 信 號 522532 五、發明說明(6) 銲頭或銲針 銲線 導線或導體 導線或導體 銲線供應裝置 鲜線 f頭線(表示電流方向) 則頭線(表示電流方向) 則頭線(表示電流方向) 說明 圖3、圖4、及圖5所示係本案所 測系統的—種實施例,其酉己合一種銲^▲干人泉麵接檢 球柵陣,或類似封裝中半•體元件i (例如° ,、、’日以檢 )〒封^件之錫球銲墊8間的銲線銲 日二;立 炱少一載具(如圖中的3: 其包含. 與該錫球銲墊g ; 寸半‘體元件1 8 ;至乂一導電材料19,接觸至少一任選的該錫球銲墊 10與=:=7連:走線5,電連接(例如經由—銲接 元件1的任一點(例ζ ^ 4任選的錫球銲墊8與該半導體 墊相對應的一銲墊广该半導體元件上與該任選的錫球銲 屯Y差產生叙置21 (其可以附設於銲線接合機器戋 第10頁 522532 五、發明說明(7) 獨立存在,,用以提供一電位差於該導電材料丨9與一銲線 1 7之間’ |干線1 7被焊接於半導體元件1的鲜墊1 6,如圖4所 示; 一偵測裝置22 (其可以附於銲線接合機器或獨立存在 )二用以測量通過該電位差產生裝置21的電流,並且根據 該電流而發出至少一狀態指示信號23,該狀態指示信號” 反慮銲線1 7與半導體元件1之間的銲接狀態。 上逑的銲線銲接狀態檢測系統,其中該載具(如圖3 一 =3、7 )可以係一基板、膠帶、散熱裝置等之中的至少 Μ辦而Ϊ半導體元件1的該載具3可以係-散熱裝置,該 命豆το件1可以籍由一種黏性材料2 一 4而附著該載具3,該前置連接線5可包含一^接=化物 位於支持該錫球銲墊8 的該錫球銲墊8,該前置連接 藉由該銲線接合作業,將— 接線5的-部份,係 連接線5又可以更包含一走綠f矣_ 、·干墊),忒觔置 載具7,而電連接該銲接手指! 〇 圖二:;線位於該 位差產生裝置21,藉由電連接(〃例=選的錫球銲墊8。電 接合作業所使用的銲線供應裝置Μ盘一 V線26 )該銲線 Μ,以及電連接(例如用—導^穿過銲頭24的銲線 U,以提供該電位差於該導電材 δ亥作業所使用的壓板 如圖4及圖5所示,當該鲜味接與辉線25之間。 〒忒接合作業完成銲接銲線17 522532 五、發明說明(8) (仍屬於銲線25的一部份)於半導體元件}的另一鲜塾16 時,導體26、銲線25 (包含銲線17 )、的半導體元件1、 前置連接線5 (可以包含一銲接手指10與位於載具7的一’走 線)、該任選的錫球銲墊8、導電材料19、壓板fj、導線 2?、電位差產生裝置21等構成一電流迴路而會有一 ^流通 差產生裝置21 ;若銲線17與半導體元件 的^
綱流較小,而若銲線17與半導體元件T ί = 2,則此電流較大。該伯測裝置22用以 f里通過遠電位差產生裝置21的電流而產生— 逮23,該狀態指示信號反應該電流之大 =^ ^ = 銲線1 7斑车道鱗-从1 口而可以反應 /、+午體7L件1之間的銲接狀態是否良好。 本案的銲線銲接狀態檢測系統之另一 从參照圖3、4、5說明之,但其中導=現方式也可 锡球銲墊8,而*枯 ♦屯材料1 9係接觸全部 手指1 G,各電連接* ^墊8的載具7包含複數個銲接 體261該銲f接口作業所使用的壓板,而經由導 内(二峨所使用的銲線供應裝㈣與銲:2t :-部份)。該銲線接合;:=(可視為銲線25 件1的銲墊16時, 業几成鲜接麵線17於半導體元 體元件1、前罾、鱼=體26、鋒線25(包含銲線17)、半導 具7的一走線)、兮=(可以包含一銲接手指1〇與位於載 第一電流通過電位差產生裝置 522532 五、發明說明(9) 反應銲線17與半導體元件丨之間的銲接狀態之良劣。偵 裝置22測篁通過電位差產生裝置21的該第一電流而產生一 第-狀態指示们虎,該第一狀態指示信號反應該第_電流 之ί小,f而可以反應銲線17與半導體元件1之間的銲接 狀態之良劣=又該銲線接合作業完成銲接銲線丨7於一 手指10時,導體26、銲線25 (包含銲線17 )、該銲接手指 1 〇、與該銲接手指1 〇電連接(直接或經過載具7的一走 )的一錫球銲墊8、導電材料19、壓板u、導線2?、電位 差產生裝置21等構成一電流迴路,而會有一第二電流通 電位差產生裝置21,該第二電流之大小反應銲線”盥該銲 接=指10之間的銲接狀態之良劣。該第二電流通常會大於 口亥第迅飢,因為該第二電流不必經過半導體元件丨。同 理,偵测裝置22也會測量通過電位差產生裝置21的該 =產匕第二狀態指示信號,該第二狀態指示信號: 二^弟一黾k之大小,因而可以反應銲線丨7與該銲接 1 〇之間的銲接狀態之良劣^ ^ #本案所提之銲線銲接狀態檢測方法的一種實施例可以 ::;3、4、5說明之。這方法實施例係配合-種銲線接 二Ϊ 4以檢測球栅陣列或類似封裝中半導體元件1與錫 ft墊8間的銲線連接狀態。該銲線接合機器可以包含、 —壓板U :也可以更包含一銲頭(或銲針)24、一熱板 ,δ亥半導體元件i與該錫球銲墊8可以由少一 :广導體元件丨的鲜塾6,暴露於;卜,;辉3線: 接狀悲檢測方法包含下列步驟:任選至少一錫球銲墊8,
第13頁 522532 五、發明說明(10) 電;r9f觸之;電連接該任選的錫球銲墊8 :/銲線接合機器完成銲接銲㈣到該半導體 過該壓L π 加^"電位差於該壓板11與該銲線17 ;測量通 示;:泸,,:ί f17的電流,並且根據該電流產生狀態指 1该狀您扣示信號反應該銲線17與該半導體元 之間的連接狀態。 邊千午體π件1 選的ίΐΪΪΛ狀態广測方法,*中的步驟「電連接該任 St”與半導體元件】」包含-步驟:電連接該 ,的锡球銲墊8與半f體元㈣任'點,或二: k的錫球銲墊8鱼直所對雍 名曰轨 人 對應的銲塾係於V、導所^ =球銲墊8的載具7可以包含至少—走線與中/;^;壬接进手 “:苴广接手指10經由一該走線電連接"該錫球銲 ’ = /、巾該㈣「電連接該任選的錫球銲墊8與該半導 選球Λ藉/該銲線接合機器將—銲線5銲接於,該任 一 m墊8所連接的銲接手指10與其所對應的銲墊6而 二,,/、中該銲線接合機器更可以包含—電位差產生 供應裝置28,該電位差係藉由,連接亀差 生衣^到該壓板i !與該銲線! 7而施加於該壓板i ι與該鲜 Ϊ二!;差產生裝置21經由導體26、銲線供應裝置28、 ,干名25 U电連銲線17,也經由導體27而電連接壓板η。 ^案的鈐線I于接狀態檢測方法另一實施例亦可以束昭 回、4、5說明;其可以包含下列步驟:以一導電材料μ、
第14頁 522532 五 發明說明(11) 接觸王部該锡球舞塾8 ;任選至少一'錫球辉塾8與該半導體 元件1電連接;電連接該任選的錫球銲墊8與該半導體元件 1 ’讓一銲線接合機器的壓板1 1接觸該導電材料1 9 ;當該 鲜線接合機器完成銲接一銲線1 7到該半導體元件1時,施 加一電位差於該壓板11與銲線17 ;測量通過該壓板11或銲 線1 7 j電流,並且根據該電流產生至少一狀態指示信號, 该狀您指示信號反應該銲線丨7與該半導體元件1之間的銲 接狀您。 ^胃本案銲線銲接狀態檢测方法的這種另一實施例中,當 «亥+銲▲接合機為完成電連接同一該銲線1 7到一該錫球銲墊 8 B守,、亦可以施加一電位差於該壓板丨丨與同一該銲線1?, :ί ί 5板的電流被測量兩次,-次執行於,該銲線接 二機=70成銲接一該銲線1 7到一該半導體元件1時,另一 ;Ϊί —亥鲜線接合機器完成電連接同-該銲線1 7到-ί (銲墊8干之門二Ϊ,該狀態指示信號反應該銲線1 7與該錫 = 該銲線17與該半導體元 明,可以參照前心方法實施例之其他說
第15頁
Claims (1)
- 專利範圍 申請專利範圍 檢測封系統,其配合-銲線接合作孝 :件與至少該封裝體包含至少-ΐ導: 包含: 接£,這銲線銲接狀態檢測系: 接區至少™载具’用以支持該半導體元件與該封裝連外在曰 區;=—導電材料’接觸至少—任選的該封裝連外· 與該半導體元件連m電連接該任選的封裝連外銲接區 —電位差產 與-銲線之間;…用以提供-電位差於該導電材料 节主^偵测裝置,其在該銲線接八作紫…n =件、該封褒連外銲接以該銲線於 剥里通過該電位差產味壯罢从考中之至少一者 而產生至少—狀態指示<”虎,電'流,並且根據該電流 銲接狀態。 & μ狀您指示信號反應該銲線 2 ·如申請專利範圍第1 導電材料為導電金屬、f電橡干狀態檢刪系統,其中該 的至少一者所構成。 皮、異方性導電膠膜等之中 如申明專利範圍第1項銲键 •如申請專利範圍第1項所述之辉線辉接狀態檢測系統, 522532 /、、申請專利範圍 fIί栽具係基板、膠帶、散熱裝置等之中的至+ — 土 其中圍第1項所述之銲線銲接狀態 ,藉由-種黏性材料配合一種崎::而 111請專利範㈣1項所述之銲線銲接狀能檢刺h i;t該前置連接線包含-銲接手指與—前置二 於支持該封裝連外銲接區的該载;置;:4:接 任選的封裝連外銲接, %連接該 該半導體元件。οσ忒則置蚌、、泉電連接該銲接手指與 7其第6項所述之銲線銲接狀態檢測系統, 合作#,ίί所包含的該前置銲線,係藉由該銲線接 二體元件—任 8其 包項:Λ了線:^ 9連Ϊ Ϊ Ϊ接手指與該任選的封裝連外銲接區。…亥載具而電 复中!第1項所述之銲線銲接狀態檢測系統, 使用:i板由電連接該銲線接合作業所 位差於嗜導命鉍it、衣銲頭内的銲線等,提供該電 料^ 材科,、该銲線之間,該壓板接觸該導電材 · ; ; - J f r „,,,. 座生衣置電連接該銲線接合作業所使用的銲 第17頁 &、申讀專利範圍 !板,該壓板接觸該導電材科, ::接-銲線於該半導體元件 二:、,表接合作業完成 係反仏 接該銲線接合作業所’“m產生裝置 该導電材料,該銲線接合 该壓板接觸 元件時,該伯測裝置根據所測;ίί:;:線:該半導體 :信號,用以指示該銲線與該半;;弟-狀態指 疋否良好,又該锃妗秘人“ i千午體凡件之間的銲接狀態 指時,該偵挪,置;M二作業完成銲接該銲線於該銲接手 號,用以指忍量電流產生-第二狀態指示信 好。 ·凃/、4 #接手指之間的銲接狀態是否良 1 3 ·如申請專利笳 統,其中該銲線接人所述之辉線鲜接狀態檢測系 時,該偵測裝置元成銲接該銲線於該半導體元件 號,用以指;所測量電流而產生-第-狀態指示信 良好 、千線與該半導體元件之間的銲接狀態是否 統,其中支專範圍第11項所述之銲線銲接狀態檢測系 /、 寸以封裝連外銲接區的該載具包含至少一銲接 第18頁 522532 六、申請專利範圍 =各電連接一該封裝連外銲 一 銲線於該銲接手指•,該“:接合作業完 手指之間的銲接狀態是否良好。用以心不讀銲線與該銲接 - ;: J; ; J ^ .,,,,., 線接合作業所需要的設備。、、係附加於,執行該銲 1 6·、一辉線銲接狀態檢测方法,配人一 檢測封裝丰導辦- 一口 #、、泉接合機器,以 ,,該半導體元件、該封裝連外 線銲接狀 持’該半導俨分 妾區由至 > 一載具所支 方法包含下列步驟: 邊知線鋅接狀您檢測 之;込至V —封裝連外銲接區,並且以一導電材料接觸 讓該ΪΪ接該任選的封裝料輝才妾區㈣半導體元件; ^ Λ :泉接合機器的一壓板接觸該導電材料; 昉,當該銲線接合機器完成銲接一銲線到該半導體元件 守’施加一電位差於該壓板與該銲線; 指八^ 1通過該壓板的電流,並且根據該電流發出一狀態 二下^说’該狀態指示信號反應該銲線與該半導元件之間 的銲接狀態。 Π ·如申請專利範圍第1 6項所述之銲線銲接狀態檢測方 ^ 其中該導電材料為導電金屬、導電橡皮、異方性導電 膠膜等之中的至少一者所構成。 國 第19頁 甲讀專利範圍 法如其申中^專封利壯範圍第16項所述之銲線銲接狀態檢剩方 19如巾衣連外銲接區係一種錫球銲墊。 法其二步^ 導體;It:電連接該任選的封裝連外銲接區匕丰 與該半導“的J驟點電連接該任選的封裝連外銲接區 =·,如其申Λ專步^範圍述之鲜線鲜接狀態檢挪方 導體元件」包含―二;接;封f連外銲接區與該半 與其所對應之銲墊。 i接^任延的封裝連外銲接區 如申請專利範圍第16項所述之銲線銲 走'上伽任選的封裝連外銲接區的檢二方 接手指,每—該婷接手指經:-5 f封衣連外銲接區,而其中 j走線連 將-前置銲線銲接於,該任選:封線接合機器 銲接手指與所對應的銲墊而完^封4連外鋅接區所逹接的 22. 如申請專利範圍第16項所70述之銲 法,其中該電位差係藉由,連 ♦于接狀恕檢測方 板、該銲線而施加於該壓板與該銲^。差產生裝置到該壓 23. —銲線銲接狀態檢測方法',°配^^一° ,測封裝半導體元件與封裝連外銲接區門姑接扣θ機器,以 態,該半導體元件、該封裝連銲^二,·+線銲接狀 持,該半導體元件的銲墊暴露於外Lti;:載具所支 邊鮮線銲接狀態檢測 522532 六、申請專利範圍 方法包含下列步驟: 乂 b ‘電材料接觸全部該封裝連外銲接區; ,選至少一封裝連外銲接區與該半導體元件電連接; t該=線接合機器的壓板接觸該導電材料; 士 I 4 ~線接合機器完成銲接一銲線到該半導體元件 时,% ^ 一電位差於該壓板與該銲線; #沌^里f =叆壓板的電流,並且根據該電流發出至少~ # ίI,號,該狀態指示信號反應該銲線與該半導體元 仵之間的銲接狀態。 2^’如申專利fe圍第2 3項所述之鲜線鲜接狀態檢測方 # ΐ > ί I電材料為導電金屬、導電橡皮、異方性導電 膠膜專之中的至少—者所構成。 守包 Ϊ如/么專/範圍第23項所述之銲線銲接狀態檢测方 该封裝連外銲接區係一種錫球銲塾。 法.,其中^專/L#圍第23項所述之銲線銲接狀態檢測方 件的任—H連外#接區係藉著連接該半導體元 :们任點而與遠半導體元件電連接。 μ ·如申請專利範圍篱2 q 法,直中辞权μ 項述之銲線銲接狀態檢測方 鲜墊而與該半:體接區係藉著連接其所對應的 ^ ^ ^ - 器將一銲線銲接於,該任選錯由,該銲線接合機 銲接手指與所對應的一銲墊門^ f外銲接區所連接的一 恐之間而與該半導體元件電連 第21頁 522532 、申蜻專利範圍 接。 2 9 jr ,·如申請專利範圍第23項所述之銲線銲接狀態檢測方 / ’其中該電位差係藉由,連接一電位差產生裝置到該壓 & Λ礒銲線而施加於該壓板與該銲線。 i· ^申請專利範圍第2 3項所述之銲線銲接狀態檢測方 '’其中當該銲線接合機器完成電連接同一該銲線到一該 $、雙外銲接區時,施加一電位差於該壓板與同一該銲 ^ 而通過該壓板的電流被測量兩次,一次執行於,該銲 ^接合機器完成銲接一該銲線到一該半導體元件時;另一 ^ ί订於,該銲線接合機器完成電連接同一該銲線到一該 連二^外鲜接區時’該狀態指示信號反應該銲線與該封裝 夕&接區之間的電連接狀態,以及該銲線與該半導體元 件之間的銲接狀薦。 3 1 法·,如复申請專利範圍第3〇項所述之鲜線鲜接狀態檢測方 載具^ t該銲線接合機器係藉著,電連接同一該銲線到該 銲i區匕含的一走線而電連接同一該銲線到一該封裝連外 3 ^,如皮申7專利範圍第31項所述之銲線銲接狀態檢測方 具所/包接合機器係藉著,鲜接同一該録線到該載 认如申靖專^接手指而電連接同—該辑線到該走線。 反庳^'指示信號包含二成份,該二成份之第-者 ’心X ’干、-泉與該半導體元件間的電: 該二成份之笙—土 見硯接狀您疋否良好, 弟一者反應該銲線與該封裝連外銲接區之間的第22頁 522532第23頁
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TW089123513A TW522532B (en) | 2000-11-07 | 2000-11-07 | Schemes for detecting bonding status of bonding wire of semiconductor package |
US09/801,404 US6492828B2 (en) | 2000-11-07 | 2001-03-07 | System and method for detecting bonding status of bonding wire of semiconductor package |
US10/264,490 US20030029901A1 (en) | 2000-11-07 | 2002-10-04 | System and method for detecting bonding status of bonding wire of semiconductor package |
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TWI416642B (zh) * | 2009-01-22 | 2013-11-21 | Chroma Ate Inc | With double-sided electrode semiconductor grain detection method and testing machine |
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TW504779B (en) * | 1999-11-18 | 2002-10-01 | Texas Instruments Inc | Compliant wirebond pedestal |
DE102005012992B4 (de) * | 2005-03-21 | 2014-01-02 | Infineon Technologies Ag | Verfahren, Bondeinrichtung und System zum Bonden eines Halbleiterelementes |
JP4547330B2 (ja) * | 2005-12-28 | 2010-09-22 | 株式会社新川 | ワイヤボンディング装置、ボンディング制御プログラム及びボンディング方法 |
JP4530984B2 (ja) | 2005-12-28 | 2010-08-25 | 株式会社新川 | ワイヤボンディング装置、ボンディング制御プログラム及びボンディング方法 |
US20090280753A1 (en) * | 2006-06-21 | 2009-11-12 | Nxp B.V. | Method of Checking the Integrity of an Antenna Arrangement, Transmitter, Receiver and Transceiver |
US7896218B2 (en) * | 2007-06-28 | 2011-03-01 | Western Digital Technologies, Inc. | Apparatus and method for conductive metal ball bonding with electrostatic discharge detection |
US9575118B2 (en) | 2012-02-24 | 2017-02-21 | Nxp Usa, Inc. | Semiconductor device comprising an output driver circuitry, a packaged semiconductor device and associated methods |
JP5827758B2 (ja) * | 2012-11-16 | 2015-12-02 | 株式会社新川 | ワイヤボンディング装置及びワイヤボンディング方法 |
JP6637516B2 (ja) | 2015-04-02 | 2020-01-29 | ハッチンソン テクノロジー インコーポレイテッドHutchinson Technology Incorporated | カメラレンズサスペンション用ワイヤ供給及び取り付けシステム |
CN107175378A (zh) * | 2017-05-24 | 2017-09-19 | 贵州振华群英电器有限公司(国营第八九厂) | 交流电焊机进行银或银合金触点硬钎焊接的方法及装置 |
US11226369B2 (en) | 2019-09-26 | 2022-01-18 | International Business Machines Corporation | Ball grid array current meter with a current sense loop |
US11054442B2 (en) | 2019-09-26 | 2021-07-06 | International Business Machines Corporation | Ball grid array current meter with a current sense mesh |
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US4555052A (en) * | 1983-02-28 | 1985-11-26 | Fairchild Camera & Instrument Corporation | Lead wire bond attempt detection |
US4586642A (en) * | 1985-05-13 | 1986-05-06 | Kulicke And Soffa Industries Inc. | Wire bond monitoring system |
JPH0715926B2 (ja) * | 1990-09-14 | 1995-02-22 | 株式会社東芝 | ワイヤボンディング検査装置 |
KR0131389B1 (ko) | 1994-09-27 | 1998-04-14 | 황인길 | 비지에이 반도체패키지의 와이어본딩 검사방법 |
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US6087842A (en) * | 1996-04-29 | 2000-07-11 | Agilent Technologies | Integrated or intrapackage capability for testing electrical continuity between an integrated circuit and other circuitry |
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TWI416642B (zh) * | 2009-01-22 | 2013-11-21 | Chroma Ate Inc | With double-sided electrode semiconductor grain detection method and testing machine |
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