TW527262B - Method for improving curvature of the polished surface by chemical mechanical polishing - Google Patents

Abstract

This invention relates to a method for improving curvature of the polished surface by chemical mechanical polishing comprising a polishing table, a polishing pad, a polishing head and a slurry exhaust system. The polishing head comprises a revolving spindle and the slurry exhaust system comprises a slurry outlet. The method for improving curve rate of the polished surface by chemical mechanical polishing is to make the slurry distributing on the polishing pad non-uniformly in controlling to control removing rate on each point of the polishing surface by the concentration of the slurry. This method will improve the defects in non-smooth on the wafer-polishing surface to make the wafer-polishing surface in full flatness after polishing.

Description

V. Description of the invention (1) 5-1 Field of invention I The invention is related to the use of 1% method, with a view to using :: method, especially related to :: f system ", use I to divide the speed *, so that research: : The level of abrasive concentration, the supply of the agent 1 the surface of the wafer after lapping is uniform, the grinding shift during grinding-2 Background of the Invention · The process of using the circuit to complete the pad, this chemical formula contains chemically-based Table to make the whole flat level. It is located in the school of mechanical engineering, and it is biased to the abrasive particles to maintain crystal mechanical grinding. It has a flat surface and a microelectronic electrical surface, and when it is uniform, a main kind of abrasive surface can be evenly distributed on the sheet. The rotary grinding process also uses a grinding circle grinding process for the position material of the wafer. This chemical removes the semiconductor uniformity from the rate. When a semi-conductor is made with a high degree of mechanical grinding, and the carrier is tight, the mechanically continuous material removal process before this chemical body is performed in the semi-conductor removal process so that it is grinded adjacent to the grinding system to obtain machinery. The polished semiconductor plane is microelectronics on the body to obtain a flat wafer that is polished with a large grinding. The process of rotating the polishing pad uses an internal agent. The chemical pad mechanical polishing is a widely used technology to flatten the wafer surface. Now, this chemical mechanical polishing process has been used in particular. 527262 V. Description of the invention (2) The higher part of the surface of the microelectronic circuit fabricated on the semiconductor material is removed, so that the polished semiconductor surface is a completely flat surface. When chemical mechanical polishing is used in the semiconductor industry, a major problem occurs. When using a polishing method to remove materials from a semiconductor, the ability to predict the level of polishing removal rate and control the uniformity of the polishing surface is limited. Therefore, the thickness and surface uniformity of the semiconductor must be continuously measured to prevent excessive polishing of the semiconductor (Over Polishing) or insufficient polishing (Under Polishing) to make the polished semiconductor surface an uneven surface, resulting in chemical mechanical polishing. For a labor-intensive process.

One factor that can help with unpredictable and non-uniform polishing speeds in chemical mechanical polishing is to fill a non-uniformly distributed abrasive between the surface to be polished of the semiconductor and the polishing pad. This abrasive is mainly used to improve the abrasive removal rate of the surface to be polished. When a certain amount of abrasive comes into contact with the surface of the wafer and reacts with the surface material, the reactive capacity of this quantitative abrasive will decrease with the degree of reaction, thus reducing its abrasive capacity. One solution to this problem is to continuously provide unused abrasives on the polishing pad. This method causes at least two problems. One is because the physical structure of this polishing method makes it difficult for unused polishing liquid to enter the surface of the wafer to be polished and the interface of the polishing pad, and the other is to provide an unused abrasive to the wafer to be polished for continuity. All surfaces are quite difficult. Therefore, how to provide an unused polishing liquid so that the wafer to be polished has a uniform and comprehensive polishing rate is very important.

Page 5 527262 — 'V. Description of the invention (3) The following items 丨 The purpose of sliding the round surface and the surface of the wafer on I is usually a small downward force I flowing between the pads. | Small forces of surface tension and flow under I are true. Phase I. To slide the polishing crystal across the interface so that the polishing method has no power. The wafer to be polished is used to add a method to polish the surface of the wafer and polish the crystal to be polished, because the research prevents the wafer from being polished on one of the pads to be polished. Grinding and polishing crystals to be polished 1 A polishing pad is provided for a non-face and a circular method applied by a round surface. The polishing pad of the polishing pad is to be measured, and the others are not used in the research. flow. . The round surface agent to be researched can be used in a large amount of surface and the abrasive can be used to allow the surface to be rounded between the pads. The abrasive still needs to grind the surface of the crystal interface. Another method is | injection. This wafer is continuously supplied to the wafer to completely fulfill the wafer requirements. In the manufacturing process, the polished wafers: the prerequisites are the same as before. This method allows the abrasive to enter the hole to be ground on the polishing table. The purpose of the grinding method is to ensure that the polishing is performed on the surface of the wafer to be polished and the mechanical polishing is performed. Therefore, how to make 5 planes is very important. In the lessons, we tried to make the polishing agent uniform on all eight surfaces and remove the points. The wafer surface before polishing was over-uniformly polished, and the interface between the wafer surface and the polishing pad passed from under the polishing pad. Hole certificate abrasives can be interfaced with the polishing pad under the polishing pad. The use of abrasive particles and polishing the surface of the wafer after polishing to 4. Traditional chemical-mechanical polishing cloths are placed on the polishing pads so that they are all at the same rate. And this method is a fairly flat and complete plane, so that the month b maintains a complete and even plane

Page 6 527262 V. Description of the invention (4) However, in the pre-process of thermal oxidation, chemical deposition, etc., wafers are often not affected by external factors or process control parameters. A completely flat surface. If it goes through a uniform chemical mechanical polishing process, the surface of the polished wafer will still be an uneven curved surface, which will increase the defect rate and increase the manufacturing cost. Therefore, how to make the chemical mechanical polishing process a controllable non-uniform polishing is the development focus of the current chemical mechanical polishing. 5-3 Purpose and Summary of the Invention: In view of the above background of the invention, the traditional chemical mechanical polishing has an average distribution of the polishing agent on the polishing pad, which makes the polishing removal rate of each point on the wafer surface the same. Problems arising from the manufacturing process. The present invention mainly provides a method for controlling the concentration of the abrasive on the crystallized abrasive surface, and then controlling the removal rate of each point on the abrasive surface, so that the later stage process has a way to solve the defects in the earlier stage process. The second object of the present invention is to control the uneven distribution of the polishing pad on the polishing pad so that the polished wafer becomes a complete plane. The third object of the present invention is to control the uneven distribution of the abrasive on the polishing pad through the difference in the position of the abrasive supply.

527262 V. Description of the invention (5) The circle has better surface quality. A fourth object of the present invention is to improve the defect rate of wafers after CMP, so as to reduce the cost of production. A fifth object of the present invention is to control the uneven distribution of the abrasive on the polishing pad through the difference in the supply position of the abrasive, so that the concentration of the abrasive on the polishing pad is controlled and uneven. In order to control the grinding removal rate of the grinding surface, the overall process is smoother and the operating efficiency of the process is increased. β Another object of the present invention is to reduce the time for adjusting and testing the machine, so as to increase the production speed and reduce the standby maintenance time. According to the above-mentioned object, the present invention provides a method for controlling the uneven distribution of the abrasive on the polishing pad. With the abrasive distributed on the polishing pad, its concentration distribution is in a state of controllably uneven, In order to make the polishing removal rate at each point of the polishing surface unequal, improve the surface unevenness defect caused by the previous process of the wafer, and improve the surface quality and surface flatness of the wafer after chemical mechanical polishing, reducing the product Bad rate. β 5-4 invention details:

Page 8 527262 V. Description of the Invention (6) Some embodiments of the present invention will be described in detail as follows. However, in addition to the detailed description, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited, which is subject to the scope of subsequent patents. In the chemical mechanical polishing process, the distribution of the polishing agent on the polishing pad is very important, because it will affect the polishing removal rate of the wafer during polishing, so that the polished wafer is an incomplete plane. . In traditional chemical mechanical polishing machines, the abrasive supply system is a fixed device, and its fixed position is a calculated and preferred abrasive output position. The required focus is to make the abrasive evenly distributed on the polishing pad. That is, the concentration distribution of the abrasive on the polishing pad is in a uniform state, so that the polishing removal rate of each point on the polishing surface of the wafer is the same, and the final purpose of a full-plane wafer is achieved. When the polishing amount of some parts of the wafer polishing surface is large, the abrasive particles input during polishing are sufficient to make the polishing removal speed faster, resulting in a lower polishing surface of this part than other parts after wafer polishing. When the amount of abrasive in some parts of the grinding surface is small, the amount of abrasive particles input during grinding is relatively reduced, and the removal rate of grinding is slow, resulting in that the abrasive surface of this part is higher than other parts after grinding, and it is easy to cause too little abrasive The resulting insufficient degree of lubrication can easily cause the wafer surface to be scratched due to too much friction during polishing. Therefore, in the traditional chemical mechanical polishing, the polishing agent is required to be evenly distributed on the polishing pad, so that the polished wafer surface has better surface quality.

527262

V. Description of the invention (7) I fee i However, in general traditional chemical mechanical polishing, it is assumed that the wafer has not been researched. The surface of the polished wafer is in a flat state, and the purpose of polishing is only to reduce wafers. The thickness of the wafer is only required to achieve the required thickness of the wafer. However, during thermal oxidation, chemical deposition, etc., the surface of the wafer is sometimes not a completely flat surface. If it is chemically polished, At the same time, the polishing removal rate is the same at all points on the wafer surface due to the same abrasive concentration, and the polished wafer surface is still an incomplete curved surface. Therefore, the method i of the present invention must be used to unevenly distribute the abrasive on the polishing pad. Using the uneven distribution of the concentration of the abrasive on the polishing pad, the polishing percentage of each point on the wafer surface | the removal rate varies according to the flatness of the wafer surface before polishing, so that the polished surface of the wafer after polishing, To achieve the required flatness.! Wafers produced in the current process, the thicker surface of the polishing surface of the wafer must be supplied with a higher concentration of abrasive when chemical mechanical polishing Or, the amount of abrasive supplied needs to be more, so that when this point is being polished, more abrasive particles are involved in the operation of polishing, and the removal rate is faster. The wafers produced by the current process have a more polished surface. When the thin part is subjected to chemical mechanical polishing, a relatively small concentration of abrasive or a small amount of abrasive must be supplied, so that when this point is being polished, fewer abrasive particles participate in the operation of grinding Φ The removal rate is slow. By controlling the concentration or dose of the abrasive, the polished wafer surface has good quality, and the defects caused by the previous process are solved.

Page 10 527262 V. Description of the invention (8) Referring to the first figure, this is a plan view of the wafer during chemical mechanical polishing. A wafer 21 is placed on a polishing table 10 and fixed by a carrier 20 The position of the wafer 21 and the wafer 21 is pressed to increase the polishing speed, and the wafer 21 is polished by using the polishing pad 11 and the added abrasive. With the method of the present invention, the surface of the unpolished wafer is first observed, and the positions A, B, and C of the abrasive supply mechanism are determined. When the abrasive supply position is different, the abrasive distribution on the wafer polishing surface will also be different, which will affect the polishing removal rate at each point of the wafer polishing surface. Therefore, it is necessary to treat the surface of the unpolished wafer. In the above, the use rate of the pad is not the same as the grinding phase. The sharp noodles are divided by the table and moved to a well-grounded place by Cheng Sobei. The production agent is the ground surface. The research table is a complete circle, the cloth is crystal, and the shape is divided.

Referring to the second figure, this is a schematic diagram of chemical mechanical polishing using the method and apparatus of the present invention. A wafer 21 is placed on the polishing table 10, and the position of the wafer 21 is fixed by the carrier 20 and the wafer is pressed to increase the polishing speed. The grinding table 10 is driven by a rotating shaft 15 parallel to the axis of the carrier to rotate the grinding table 10, and a rotating shaft 22 above the carrier 20 also drives the carrier 20 to rotate. The wafer 2 1 is polished by using the abrasives added by the polishing pad 11 and the abrasive supply system 30. The abrasive output end is located above the polishing table and is in the same direction as the carrier 20. The abrasive supply system 30 used in the present invention is a dynamic abrasive supply mechanism, which includes at least one rod-shaped rotatable or movable element, and the central axis of the element rotation is parallel to the axial direction of the carrier , Visible unground

527262 V. Description of the invention (9) The surface condition of Japanese Yen 2 1 is adjusted to grind the two abrasive input ends. One input end and the other input end 40 are chemical solvents. The pH value is similar to that of commonly used abrasives. In the process of chemical mechanical polishing, adjust and control the concentration of the abrasive at the previous points of the abrasive output. The abrasive removal rate at each point of the surface is different. The concentration of the abrasive at the contact is higher. The polishing removal rate that it contacts, let the polished wafer table refer to the third figure, which is the * schematic diagram of chemical mechanical polishing. A carrier 20 is used to fix the position of the wafer 21. The grinding table 10 is rotated by a parallel parallel under the grinding table 10, and the carrier 20 is rotated upward. Using the polishing pad 1 1. The abrasive is used for polishing. The abrasive output end is located at the position of the 0-agent supply system, and 4 2 is the general abrasive 31 input end and the input end. The chemical solvent used has the function of diluting the generally used round surface to produce a bad chemical reaction. Depending on the concentration of the surface of the unpolished wafer, the surface of the wafer to be polished will be different. . Product should be large 2: the point of grinding, which increases the grinding removal rate, requires a lower concentration of microlubricant to reduce the grinding surface to a required standard. The method and device of the present invention are used to carry wafers 21. Place the wafer on the grinding table 10 to facilitate the pressure on the wafer to increase the grinding speed on the axis of the carrier. 5 Drive, and there is also a shaft 22 to drive the carrier 20. 31 and chemical solvent 33 are on the wafer 21 above the grinding table, and are on the same side as the carrier _ In the present invention, two abrasive supply systems are used, one supply system 3 7 is to provide the commonly used abrasives 31, Another supply system 3 5 provides one

Page 12 527262 V. Description of the invention (ίο) Chemical solvents 3 3. A Both supply systems include at least one rod-shaped rotatable or movable element, and the central axis of rotation of this element is parallel to the axial direction of the carrier. The chemical solvent used has a pH value similar to that of commonly used abrasives, and its function is to dilute the commonly used abrasives without causing adverse chemical reactions with the surface of the wafer being polished. The rain supply system is separated by a distance. First of all, depending on the surface quality of the unpolished wafer, it is necessary to determine which point the polishing removal rate needs to be faster, and which point the polishing removal rate needs to be slower. In the process of chemical mechanical polishing, the faster polishing removal rate is required. The point is simply applied with an abrasive, and a chemical solvent is added at a point where a slower grinding removal rate is needed, diluting the concentration of the abrasive on the polishing pad, reducing the concentration of abrasive particles at this point, making the grinding removal rate slower. Finally, the polished wafer surface is brought to a desired standard. Referring to the fourth figure, this is a schematic diagram of chemical mechanical polishing using the method and apparatus of the present invention. Place a wafer 21 on the polishing table 10, use the carrier 20 to fix the position of the wafer 21 and apply pressure to the wafer to increase the polishing speed. The grinding table 10 is driven by a rotating shaft 15 parallel to the axis of the carrier to rotate the grinding table 10, and a rotating shaft 22 above the carrier 20 also drives the carrier 20 to rotate. The wafer 2 1 is polished using a polishing pad 11, a polishing agent 3 1, and a chemical solvent 3 3. The polishing agent output end is located above the polishing table and is in the same direction as the carrier. Participants In the present invention, two abrasive supply systems are used. One supply system 37 provides a commonly used abrasive 31, and the other supply system 35 provides a chemical solvent 33. Both supply systems include at least one rod-like rotatable or rotatable

Page 13 527262 V. Description of the invention (11) The moving component, and the central axis of this component's rotation is parallel to the axis of the carrier. The chemical solvent used has a pH value similar to / usually used in the abrasive, and its function is to release the commonly used abrasive, and the tile will not have an adverse chemical reaction with the surface of the wafer being polished. The distance between the two supply systems is very close. First of all, depending on the quality of the unpolished wafer surface, it is necessary to determine which point the polishing removal rate needs to be faster and which point needs to be slower. In the process of chemical mechanical polishing, the added chemical bath agent is used. It is mixed with the abrasive on the polishing pad, and the concentration of the output abrasive is controlled so that the concentration of the abrasive at the points on the surface of the wafer to be polished is different, and the polishing of each point on the surface of the wafer to be polished is removed. The rates are different. Where a large number of grinding points are required, the concentration of the abrasive that Lu Qi is in contact with is large in order to increase the grinding removal rate. Where a small amount of grinding is required, the concentration of the grinding agent that is connected to it is small to reduce the grinding removal rate. Let the polished wafer surface reach a required standard. Referring to the fifth figure, this is a schematic diagram of chemical mechanical polishing using the method and apparatus of the present invention. A wafer 21 is placed on the polishing table 10, and the position of the wafer 21 is fixed by the carrier 20 and the wafer is pressed to increase the polishing speed. The grinding table 10 is driven by a rotating shaft 15 parallel to the axis of the carrier, so that the grinding table 10 moves in an orbital shape, and a rotating shaft 22 above the carrier 20 drives the carrier 20 to rotate. Use polishing pad 1 1, polishing agent 3 1 and chemical solvent 3 3 to polish wafer 2 2 'The polishing agent output end is installed on the polishing table, and the polishing agent is injected into the polishing pad from below the polishing table, and the chemical is passed through the polishing table. Mechanically polished wafers ^ for abrasives. Referring to the sixth figure, the method of the present invention is used to form regions of two different concentrations of D and E on the polishing pad to control the research and development.

Page 14 527262 V. Description of the invention (12) Shape of polished wafer. The abrasive supply system 30 used in the present invention has two abrasive input terminals. One input terminal 4 2 is a general abrasive 31 input terminal, and the other input terminal 40 is a chemical solvent input terminal. Generally, the abrasive used is functional and does not differ from the surface of the wafer being polished. During the mechanical polishing process, you can view and control the concentration of the abrasive before it is discharged. The concentration of the abrasive that is in contact with each other is different. The concentration of the abrasive needs to be large in order to increase the grinding point. The concentration of the abrasive that it is connected to allows the polished wafer surface to reach the chemical solvent used. The pH value is approximately the dilution of the commonly used abrasive. Adverse chemical reactions. In the case of modifying the surface of an unpolished wafer, adjust the "points of the surface of the wafer to be polished" to further polish a large number of points on the surface of the wafer to be polished, and the polishing removal rate it contacts requires a small amount of polishing The degree is small to reduce the grinding removal rate by a required standard.

Brother seven picture

This is another consistent example of chemical mechanical polishing for two months, which is another linear movement. Here, the grinding platform 13 provides a grinding surface that is perpendicular to the axial direction of the carrier when it is rotated, and the grinding grinding plate 1 1—block =, whose direction is perpendicular to the axial direction of the carrier. Moment 20, using a live 7 grinding platform 10 during polishing, silicon wafer 21 is polished at the cutting section, this activity speaks about the abrasive supply mechanism 30 to provide grinding for the width of the polishing table L / ^ supply mechanism 30 moved The range has the same direction. "—The output end is located above the grinding table, and

527262 V. Description of the invention (13) In this abrasive supply machine 'and the table of this component wafer 21 has two grinding input terminals, the input is generally used', and it will not be integrated with the chemical machinery and control the laboratory The contact point of the grinding and polishing abrasive is concentrated, and its rate is' allowing the structure used in the grinding, at least the center surface of the rotation, the adjustment input end. In the process of crystal grinding when the abrasive for the chemical solvent is being polished, the abrasive concentration before the abrasive is discharged has a large difference in the rate of removal. The polishing of the wafer table after the grinding includes one axis in parallel. 3. All of the functional circular surfaces can be viewed at different concentrations. Need to increase the concentration of the ground agent to achieve the supply rod shape of the agent can be input at the carrier agent supply side for dilution to produce non-grinding t 'cause by' and then a large number of grinding to remove the system 30 is the axis of rotation or can, The dynamic research degree of the system 30 is lower than the required point, rate, and rate for polishing the surface of the chemical wafer, which is generally made by a general polishing chemical solvent, so that the wafer is polished. The moving element can be seen in the unabrasive position, and the agent 3 1 and the other 33 have a pH near the reaction of the abrasive. In the case of the adjustment, each point on the surface is adjusted, and the wafer surface is in contact with each other. A small amount of grinding is required. Grinding removal speed. ^ Another embodiment is another linear movement. When the polishing pad 1 3 of a flat pad of a polishing pad is rotated, the polishing plane moves two, the axial direction of 2 is vertical, and the grinding pad 11 is polished. Pieces of stickers are perpendicular to the axis of the vehicle. On the rectangle 2 0, when using grinding =: σ on 10, silicon wafer 2 1 is polished on the carrier, this movable type = the abrasive supply mechanism 30 provides the abrasive ^ the range moved by the different supply mechanism 3 〇 about

Page 16 527262 V. Description of the invention (14) It is the width L of the grinding table, and the abrasive output end is located above the grinding table, which is in the same direction as the carrier. In the present invention, two abrasive supply systems are used. One supply system 37 provides a commonly used abrasive 31 and the other supply system 35 provides a chemical solvent 3 3. Both of these supply systems include at least one rod-shaped rotatable or movable component, and the central axis of the component rotation is parallel to the axial direction of the carrier. The chemical solvent used has a pH value similar to that of commonly used abrasives, and its function is to dilute the commonly used abrasives without causing adverse chemical reactions with the surface of the wafer being polished. The distance between the two supply systems is very close. First of all, depending on the surface quality of the unpolished wafer, it is necessary to determine which point the polishing removal rate needs to be faster, and which point the polishing removal rate needs to be slower. In the process of chemical mechanical polishing, the added chemical solvent is used, and The abrasive is mixed on the polishing pad, and the concentration of the output abrasive is controlled, so that the concentration of the abrasive at each point on the surface of the wafer to be polished is different, so that the polishing removal rate of each point on the surface of the wafer to be polished is different. Where a large number of grinding points are needed, the concentration of the abrasive that they are in contact with is large in order to increase the grinding removal rate, and where a small amount of grinding is required, the concentration of the abrasive agent that is in contact with it is small to reduce the grinding removal rate, so that The polished wafer surface meets a required standard. Referring to FIG. 9, another embodiment of the present invention is shown, which is a schematic diagram of another chemical mechanical polishing process. The grinding platform 13 provided here is a linear movement. The plane of the grinding pad is perpendicular to the axial direction of the carrier. When the grinding pad rotates, the direction of the grinding plane movement is perpendicular to the axial direction of the carrier. rectangle

Page 17 527262 V. The abrasive sheet of the description of the invention (15) 1 is attached to the polishing platform i 0 one by one. On the 20th, the mobile abrasive is used for polishing = wafer 21 is polished on the tool during polishing. This mobile abrasive supply machine can be moved by the sn ', grind clam ^ 不 苒 d 1 1 as the polishing table. The width L, the abrasive output end is located in the same direction. It is located above the grinding table and it is used to provide chemical solvent movement. It is used for the dilution. The good chemical polishing crystal is slower and the concentration of the slower grinding agent is slower. The two abrasives used in these two supply systems and the element conversion solvent are used in the abrasive reaction of its pH value. The grinding shift of the two surface quality points requires a faster removal rate, which reduces the amount of grinding abrasive 31 in the final movement, which is approximately one dose, and the supply system determines the removal rate of the grinding shift. The crystal supply after adding this point is another supply that contains less mandrels, which will not be separated from the system, which requires a slower removal rate plus a chemical abrasive particle round surface system. One supply should be 35 rods. The crystals that can be transferred to the abrasive used by the carrier for a certain distance. Grinding removal is performed by applying a grinding solvent at the point of chemical transformation to dilute the concentration of the ions so that a desired system 37 can be provided to move or axially. ‘Function The round surface must first learn the mechanical abrasives and polishing pads. The standard setting of polishing movement is shown in the figure. The figure is generally shown in the tenth figure. This is the process and method of chemical and mechanical grinding in the process of chemical mechanical grinding. The song connected by the symbol "▲" :: In the valley = Schematic & Chemical grinding machine

527262 V. Description of the invention (16) The abrasive is added to the surface of the wafer after polishing without adding a chemical solvent, and the shape is produced. The curve formed by the "" symbol in the figure is the situation where the surface of the wafer after polishing is obtained by using an abrasive containing a chemical solvent in chemical mechanical polishing. From the figure we can know that 'when performing chemical mechanical polishing and adding a chemical solvent to the abrasive, the surface curve of the wafer measured after polishing is relatively flat, which represents that the polished wafer has a better surface flatness. . In addition, when chemical mechanical polishing is performed without adding a chemical solvent in the abrasive, the wafer surface measured by grinding 彳 1 is a tooth shape ', indicating that the flatness of the wafer surface after polishing is relatively poor. · It can be proved that the chemical solvent is added to the polishing agent, so that the polishing agent is unevenly distributed on the polishing pad, and the surface of the wafer after polishing can have better surface flatness. 'In today's highly competitive society, production capacity and quality have always been the key requirements of various factories. If the previous chemical mechanical polishing equipment and methods continue to be used', quality and production capacity cannot be improved, and it will be eliminated. The present invention is to make the polishing agent controllably and unevenly distributed on the polishing pad, so that the object to be polished has different polishing removal rates at various points on the polishing surface during grinding, and the polished wafer has better Surface uniformity, and can overcome the defects of uneven surface of the wafer produced in the previous process, improve the yield of the product, ^ = production cost, and reduce the adjustment of the chemical mechanical polishing machine's two rooms to increase the production speed . In summary, the method provided by the present invention basically can provide an abrasive supply mechanism and add a chemical solvent to the abrasive to make grinding,

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527262 V. Description of the invention (17) Controlled uneven distribution on the polishing pad to increase the surface quality of the wafer after polishing, and reduce the loss caused by adjusting parameters of the chemical mechanical polishing machine, and can overcome the previous manufacturing process The problem of uneven wafer polishing surface not only has practical effects, but also has not been designed before. It has improved efficacy and progress. Therefore, it has met the requirements of the patent law and applied for it in accordance with the law. To this end, the examiners are honored to examine and pray for the grant of a patent as soon as possible. The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit of the ® disclosed in the present invention should be included in the following Within the scope of the patent application.

Page 527262 Brief description of the diagram The first diagram is a top view of a chemical mechanical polishing process generally using a movable abrasive supply mechanism; the second diagram is a chemical machine using a movable abrasive supply mechanism and a premixed abrasive and chemical solvent Schematic diagram of the grinding process; The third diagram is a schematic diagram of a chemical mechanical polishing process using a movable abrasive supply mechanism and separate output of abrasives and chemical solvents; the fourth diagram is a diagram of a movable abrasive supply mechanism and separate output of abrasive blasting agents and The schematic diagram of the chemical mechanical polishing process of the chemical solvent; the fifth diagram is a schematic diagram of the chemical mechanical polishing process of supplying the abrasive and the chemical solvent from below the polishing table; the sixth diagram is the schematic diagram of the distribution of the abrasive on the polishing pad; the seventh diagram is Schematic diagram of the chemical mechanical polishing process using a movable abrasive supply mechanism and a premixed abrasive and chemical solvent on a linear grinding table; Figure 8 shows the use of a movable abrasive supply mechanism and separate output of abrasives and chemical solvents on a linear grinding table. Schematic diagram of the chemical mechanical polishing process;

Page 527262 Brief description of the diagram The ninth diagram is a schematic diagram of a chemical mechanical polishing process using a movable abrasive supply mechanism and a separate abrasive and chemical solvent output on a linear grinding table; and the tenth diagram is a grinding using a chemical solvent Comparison of the surface of the wafer after the chemical mechanical polishing process and the abrasive without the chemical solvent. Representative symbols of main parts: Xin 10 Grinding platform 11 Grinding pad 13 Grinding platform 15 Spindle 20 Carrier 21 Wafer 22 Rotary shaft 30 Dynamic abrasive supply mechanism 31 Abrasive agent 33 Chemical solvent 35 Supply system 37 Supply system 40 Input terminal 42 Input terminal

Page 22 527262 The diagram briefly illustrates the position of the abrasive supply mechanism B the position of the abrasive supply mechanism C the position of the abrasive supply mechanism D the area where the concentration is distributed E the area where the concentration is distributed L the width of the grinding table

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Claims (1)

527262 6. Scope of patent application 1. A method for improving the surface quality of a chemical mechanical polishing process, the method at least comprises: laying a polishing pad on a polishing table; using a movable abrasive supply mechanism to output a mixed abrasive to the Above the polishing pad, the mixed abrasive includes at least a chemical solvent and an abrasive; a wafer is placed on the polishing machine through a carrier; and the wafer is etched using the mixed abrasive and the polishing pad. Grind. 2. The method according to item 1 of the scope of patent application, wherein the above polishing table is a platform for β polishing the wafer. 3. The method according to item 2 of the patent application range, wherein the above-mentioned grinding table is a linearly moving grinding table, and the moving direction of a grinding plane of one of the linear grinding tables is perpendicular to the axial direction of the carrier. 4. The method of claim 2 in the scope of patent application, wherein the above-mentioned grinding table is a rotary grinding table driven by a rotating shaft parallel to the axis of the carrier. 5. The method according to item 1 of the patent application range, wherein the above-mentioned wafer includes at least β containing a substrate and an abrasive layer. 6. The method according to item 1 of the scope of patent application, wherein the dynamic abrasive supply mechanism is a rod-shaped rotatable object, and the central axis of rotation is parallel to Page 24 527262 6. Scope of patent application The axial direction of the vehicle. 7. The method of claim 6 in the scope of patent application, wherein the dynamic abrasive supply mechanism further includes a fluid output end. 8. The method according to item 1 of the patent application range, wherein the above-mentioned mixed abrasive contains at least a fluid containing fine particles. 9. For the method of claim 1 in the scope of patent application, in which the above-mentioned chemical solvent does not cause a bad chemical reaction on the polished surface of the wafer. · 10.—A method for improving the surface quality of a chemical mechanical polishing process, the method at least comprises: laying a polishing pad on a polishing table; and using a movable abrasive supply mechanism to output an abrasive on the polishing pad ; Using a movable chemical solvent supply mechanism to output a chemical solvent on the polishing pad; placing a wafer on the polishing machine using a carrier; and using the polishing agent, the chemical solvent and the polishing pad to Wafers are polished. 1 1. The method of claim 10 in the scope of patent application, wherein the polishing table is a platform for polishing the wafer. Page 25 527262 6. Application for patent scope 1 2. The method according to item 11 of the patent application scope, wherein the above-mentioned grinding table is a linearly moving grinding table, and the direction of movement of one of the grinding planes of the linear grinding table is perpendicular to The axial direction of the vehicle. 13. The method according to item 11 of the scope of patent application, wherein the grinding table is a rotary grinding table driven by a rotating shaft parallel to the axis of the carrier. 14. The method according to item 10 of the scope of patent application, wherein the above wafer includes at least a substrate and an abrasive layer. 15. The method according to item 10 of the scope of patent application, wherein the dynamic abrasive supply mechanism is a rod-shaped rotatable object, and the center axis of the rotation is parallel to the axial direction of the carrier. 16. The method according to item 15 of the scope of patent application, wherein the dynamic abrasive supply mechanism further includes an abrasive output. 1 7. The method according to item 10 of the scope of patent application, wherein the above-mentioned dynamic chemical solvent supply mechanism is a rod-shaped movable object. 18. The method according to item 17 of the scope of patent application, wherein the dynamic abrasive supply mechanism further includes an abrasive output. Page 26 527262 6. Scope of patent application 1 9. The method according to item 10 of the scope of patent application, wherein the above-mentioned abrasive contains at least a fluid containing fine particles. 20. The method according to item 10 of the patent application range, wherein the above-mentioned chemical solvent does not cause a bad chemical reaction on the polished surface of the wafer. 2 1. A method for improving the surface quality of a chemical mechanical polishing process, the method at least comprises: laying a polishing pad on a polishing table; using an abrasive supply system under the polishing table to output an abrasive β to the polishing pad; Above the polishing pad, the abrasive contains at least a chemical solvent that does not cause an adverse chemical reaction on the wafer polishing surface; placing a wafer on the polishing machine table; and using the mixed abrasive and the The polishing pad polishes the wafer. 22. The method according to item 21 of the scope of patent application, wherein the polishing table is a platform for polishing the wafer. 2 3. The method according to item 22 of the scope of patent application, wherein the grinding table is a rotary grinding table driven by a rotating shaft parallel to the axis of the carrier. 0 2 4. The method according to item 21 of the scope of patent application, wherein the wafer described above includes at least a substrate and an abrasive layer. Page 527 262 Page 28