494537 1917twf.DOC/005 A7 _____B7_ 五、發明説明（I ) 本發明是有關於一種在形成積體電路元件時其表面平 坦化的技術，且特別是有關於一種改善化學機械硏磨 (chemical mechanical polishing)的方法。 製造積體電路元件時，從元件的表面移除物質常須一 或多階段的製程，且在進行下一步製程前須將物質層平坦 化。隨著使用次數的增加，常用化學機械硏磨法來完成物 質的移除和平坦化。化學機械硏磨製程係利用壓力控制的 旋轉硏磨表面（rotating polishing surface)負載晶片，使'晶 片表面朝下，並輸入硏漿（slurry)。硏漿通常包括化學活 性組成（chemically active component)比如酸或鹼，和機 械活性（mechanically active)比如二氧化砂微粒之硏磨劑 (abrasive)。雖然正確的機制還未了解，但化學反應和機 械硏磨促成硏磨和平坦化等製程，且化學機械硏.磨法已發 展在金屬層和介電層的平坦化製程上。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 化學機械硏磨法可使用於積體電路元件的多層硏磨 (polishing multiple layers)。例如，場效應電晶體（field effect transistor )元件、二極體（diodes )、或電晶體 (transistors)形成於基底上，然後第一層的絕緣物質沈積 在積體電路元件上方。接著定義第一層的絕緣物質’以形 成接觸窗開口（contact holes)或介層窗（vias)· ’將介層 窗塡滿導電物質，以穿透第一層的絕緣物質到接觸基底表 面上適當部份的元件定義出垂直內連線（vertical interconnections)。因爲導電金屬比如銘無法提供介層窗足 夠的塡滿，因此通常利用化學氣相沈積（CVD)法沈積鎢 3 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央標準局員工消費合作社印製 494537 1917twf.DOC/005 A 7 ______B7__ 五、發明説明（> ) 來塡滿介層窗。在沈積鎢到介層窗的過程中，會有一層鎢 形成於絕緣層上，當介層窗塡滿後，需移除溢出於介層窗 的部份，並將鋁導線沈積在介電層和介層窗上方。其中絕 緣層上方鎢的移除可以使用回蝕刻（etch back)步驟比如 反應離子蝕刻（reactive ion etching，RIE)，然而反應離子 蝕刻步驟會將鎢過蝕刻（over etch)，會從介層窗裏移除部 份的鎢。如此會導致介層窗裏凹陷的鎢和隨後沈積的鋁導 電層之間接觸不良。再著，當鎢回蝕刻完後，殘留在矽晶 片表面上的粒子會造成元件的傷害。另一種進行回蝕刻步 驟是化學機械硏磨製程，能將多餘的鎢移除。 對鎢的化學機械硏磨法而言，傳統上使用兩個製程步 驟。第一步驟爲晶片的硏磨，在第一硏磨站（Polishing station )使用具有氧化劑和低pH値的硏槳，以從絕緣層的 表面移除多餘的鎢。在第一步驟的化學機械硏磨步驟中， 絕緣層可做爲蝕刻終止層。第二步驟將晶片移到第二硏磨 站，使用高pH値的硏漿，以將此絕緣層平坦化並硏磨。此 二步驟傳統上相信是必須的，因爲第一硏磨步驟會在絕緣 層留下刮痕（scratches)，這些刮痕會捉住污染物’且隨後 會導致導電結構間的短路。第二硏磨步驟爲消除絕緣層刮 痕的磨光製程。理想上，在第二硏磨期間氧化層移除的厚 度，等於從第一金屬移除步驟中所導致之刮痕的最大深 度。除了刮痕，第一硏磨步驟也可能從介層窗移除部份的 鎢，因爲硏漿以大於介電物質的移除速率有系統的移除 鎢。因此在硏磨介電層的第二步驟中，利用對介電層有選 4 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） (請先閲讀背面之注意事項再填寫本頁)494537 1917twf.DOC / 005 A7 _____B7_ V. Description of the Invention (I) The present invention relates to a technology for flattening the surface of an integrated circuit element when it is formed, and in particular to an improved chemical mechanical polishing )Methods. When manufacturing integrated circuit components, removing material from the surface of the component often requires one or more stages of processing, and the material layer must be planarized before proceeding to the next process. As the number of uses increases, chemical mechanical honing is commonly used to complete the removal and planarization of the material. The chemical mechanical honing process uses a pressure-controlled rotating polishing surface to load the wafer so that the surface of the wafer faces downward and inputs the slurry. Mortar usually includes chemically active components such as acids or bases, and mechanically active such as abrasives of sand dioxide particles. Although the correct mechanism is not yet understood, chemical reactions and mechanical honing promote processes such as honing and planarization, and chemical mechanical honing has been developed on the planarization process of metal layers and dielectric layers. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the notes on the back before filling out this page). The chemical mechanical honing method can be used for polishing multiple layers of integrated circuit components. For example, a field effect transistor element, diodes, or transistors are formed on a substrate, and then a first layer of insulating material is deposited over the integrated circuit element. Then define the first layer of insulating material 'to form contact holes or vias.' Fill the via with conductive material to penetrate the first layer of insulating material onto the surface of the contact substrate Appropriate components define vertical interconnections. Because conductive metals such as Ming cannot provide sufficient coverage of interlayer windows, tungsten is usually deposited by chemical vapor deposition (CVD). 3 This paper size is applicable to Chinese National Standard (CNS) A4 (210X297 mm) Central Standard of the Ministry of Economy Printed by the Bureau ’s Consumer Cooperatives 494537 1917twf.DOC / 005 A 7 ______B7__ 5. Description of the invention (>) to fill the interlayer window. During the deposition of tungsten to the dielectric window, a layer of tungsten is formed on the insulating layer. When the dielectric window is full, the part that overflows the dielectric window needs to be removed, and the aluminum wire is deposited on the dielectric layer. And via window. Wherein, the tungsten over the insulating layer can be removed using an etch back step such as reactive ion etching (RIE). However, the reactive ion etching step will over-etch tungsten and remove it from the interlayer window. Remove some tungsten. This will result in poor contact between the recessed tungsten in the dielectric window and the subsequently deposited aluminum conductive layer. Furthermore, after the tungsten etch-back is completed, particles remaining on the surface of the silicon wafer may cause damage to the device. Another etch-back step is a chemical mechanical honing process that removes excess tungsten. For chemical mechanical honing of tungsten, two process steps have traditionally been used. The first step is the honing of the wafer. A honing paddle having an oxidizing agent and a low pH hafnium is used at a first honing station to remove excess tungsten from the surface of the insulating layer. In the chemical mechanical honing step of the first step, the insulating layer can be used as an etch stop layer. The second step moves the wafer to a second honing station, using a high-pH honing slurry to flatten and hob the insulating layer. These two steps are traditionally believed to be necessary because the first honing step will leave scratches on the insulating layer, these scratches will catch contaminants' and subsequently cause short circuits between conductive structures. The second honing step is a polishing process to eliminate scratches on the insulating layer. Ideally, the thickness of the oxide layer removed during the second honing is equal to the maximum depth of the scratches caused by the first metal removal step. In addition to scratches, it is also possible for the first honing step to remove a portion of the tungsten from the interlayer window because the slurry systematically removes tungsten at a rate greater than the removal rate of the dielectric substance. Therefore, in the second step of honing the dielectric layer, the dielectric layer is selected. 4 paper sizes are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling (This page)
494537 1917twf.DOC/005 A7 _____ B7___ 五、發明説明〇 ) 擇性之硏漿，做爲介電層和介層窗內鎢的平坦化製程。 經濟部中央標準局員工消費合作社印裝 (請先閲讀背面之注意事項再填寫本頁) 第1圖繪示傳統化學機械硏磨的裝置。晶片10固定於 旋轉台14 (rotating platen)上的晶片負載器12 (wafer carrier)〇晶片負載益12會巨在晶片10上產生作用力，且附 著於旋轉軸20 ( rotating spindle)，所以晶片10與旋轉台 14彼此獨立地旋轉。硏磨墊16 ( polishing pad)置於旋轉 台14上，並在硏磨墊16的表面提供硏漿18 (polishmg slurry)。如第2圖所示，晶片負載器12包括夾盤22( chuck) 和支撐層24 ( backing fUm)。支撐層24置於晶片10和夾 盤22之間，以在夾盤22和晶片10之間提供某種彈性的程 度。如果晶片1〇被夾盤22固定得太緊，則在夾盤22的任 何粒子或非平面的缺陷會被傳送到晶片10上，且導致晶片 10產生微細刮痕或缺陷。一或多個硏磨墊16可以用來提供 晶片10和旋轉台14之間某種彈性的程度。如果硏磨墊16 和晶片10之間的接觸太堅硬，會增加晶片斷裂的風險。如 果硏磨墊16太軟，則不打算要硏磨的物質和不平坦的物質 會從晶片10的表面被移除，因而造成晶片10的變形，最 終結構的表面會較預期的不平坦。硏磨墊16通常保持有一 點粗糙，其隆起物大小約1〜ΙΟμιη以支撐和傳遞硏磨漿18。 化學機械平坦化的正確機制很複雜，且被了解的很 少。化學機械硏磨中有許多變化相關於化學和機械部份， 相關於化學的因素包括硏漿型態、硏漿pH値、硏漿粒度、 硏漿流量和製程溫度。相關於機械的因素包括硏磨壓力、 回壓、旋轉台速度和硏磨墊型態。典型的硏漿混合物是酸 __ 5 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ~ 494537 1917twf.DOC/005 A7 B7 五、發明説明（if) (請先閱讀背面之注意事項再填寫本頁) 或鹼’以及具硏磨性的物質比如二氧化砂。對硏磨和移除 金屬層比如鎢而曰’在桌一步驟的鎢化學機械硏磨法，使 用含氧化劑的組成’比如pH 2〜4的h2〇2。在第二步驟的鎢 化學機械硏磨法’對氧化層的硏磨或平坦化而言，使用驗 性溶液比如pH 10〜11.5的KOH。對均勻的硏磨而言，通常 希望（1)晶片上的每一點相對於硏磨墊有相同的速率，（2) 晶片下硏漿均勻地分佈，和（3)晶片的對稱。 移除多餘鎢金屬和磨光底部絕緣層製程的兩個步驟逋 常在不同的硏磨狀態下完成，或在第一和第二化學機械硏 磨法之間更換硏磨墊。因爲第一和第二硏漿之間的不同是 用來硏磨金屬層和絕緣層，其中第一和第二化學機械硏磨 步驟沒有用相同的硏磨墊。如果使用相同的硏磨墊，會導 致pH値的不穩定和產生粒子的問題，因爲在第一酸性硏漿 和第二鹼性硏漿之間發生酸鹼反應，且會有非預期的粒子 沈澱在硏磨墊上。因此兩步驟製程會導致鎢化學機械硏磨 製程較費時、昂貴和不可預期的事。 經濟部中央標準局員工消費合作社印製 爲達成本發明之上述和其他目的，一種使用低pH値硏 漿混合液之化學機械硏磨法，包括：提供包括一介電層的 一半導體晶片，在至少部份此介電層上形成一金屬層；提 供至少一硏磨墊，用於化學機械硏磨；提供pH値範圍約爲 2〜4之一第一硏漿混合液，用於硏磨金屬層，以留下此介電 層曝露之表面；以及提供pH値範圍約爲2〜4之一第二硏漿 混合液，用於硏磨介電層，在硏磨該金屬層的步驟後硏磨 介電層。 6 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 494537 1917twf.DOC/005 A7 B7 五、發明説明（Γ) 另一本發明的較佳實施例，包括：提供一介電層；至 少形成一介層窗穿過介電層；形成一鎢層於介層窗內和介 電層上；接著進行第一化學機械硏磨步驟，並使用一第一 硏漿移除介電層上的鎢層，此第一硏漿爲pH値範圍約爲 2〜4之一氧化劑組成；再進行第二化學機械硏磨步驟，並使 用一第二硏漿移除介電層，此第二硏漿爲pH範圍約爲2〜4 之一氧化劑組成。 另一本發明的較佳實施例，包括··提供一介電層於二 基底上；提供至少一介層窗穿過介電層；提供一鎢插塞在 介層窗內，和一鎢層於至少部份介電層上；提供一第一硏 漿包括硏磨性粒子，其pH値範圍約爲2〜4 ;提供一第二硏 漿包括硏磨性粒子，其pH値範圍約爲2〜4 ;在化學機械硏 磨裝置上提供一硏磨墊；在硏磨墊上使用第一硏紫進行第 一化學機械硏磨步驟，以移除介電層上的鎢層；以及在硏 磨墊上使用第二硏漿進行第二化學機械硏磨步驟，以硏磨 介電層.。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，卞文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖式之簡單說明： 第1圖係顯示一種傳統化學機械硏磨裝置的透視圖。 第2圖係顯示一種傳統化學機械硏磨裝置的側視圖。 第3圖至第1〇圖係顯示根據本發明較佳實施例包括化 學機械硏磨之一結構的形成。 7 本紙張尺度適用中國國家標準（CNS ) Μ規格（210X297公釐） 494537 1917twf.DOC/005 A7 B7 五、發明説明（6 ) 其中，各圖標號與構件名稱之關係如下： 1 〇 :晶片 12 :晶片負載器 14 :旋轉台 16、44 :硏磨塾 18 :硏漿 20 :旋轉軸 22 :夾盤 ^ 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 24 :支撐層 30 :第一導線層 32 :介電層 34 :接觸窗 36 :阻障層或附著層 38 :鎢插塞 42 :第一硏漿 46 :刮痕 48 :第二硏漿 50 :第二阻障層 52 :導電層 實施例 傳統鎢化學機械硏磨技術包括多重步驟製程，使用第 一硏漿從介電層上移除多餘的鎢，第二硏漿用於硏磨或磨 光在上述鎢的硏磨步驟期間於介電層表面所形成的刮痕。 傳統的方法對不同的硏漿必須使用兩個不同的硏磨墊，通 8 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央標準局員工消費合作社印製 494537 1917twf.D〇C/0〇5 A7 -- B7 五、發明説明（9 ) 常意指兩種不同的硏磨狀態，一種是裝置硏磨墊和硏漿以 移除鎢，第二種裝置是另一不同的硏磨墊和另一不同的硏 漿以硏磨底層的介電層。第一種硏漿傳統上其pH値範圍爲 2〜4。第二種硏漿傳統上其pH値範圍爲10〜11.5。因此須要 兩種不同的硏磨墊或硏磨狀態，導致鎢化學機械硏磨製程 較預期的產出爲慢。 本發明一較佳實施例之化學機械硏磨製程，包括使用 相同的硏磨墊硏磨多餘的鎢和在多餘的鎢移除後之底層^ 介電層。本發明的發明人發現做爲移除鎢的第一硏漿和做 爲硏磨底層的絕緣層的第二硏漿，藉著安排兩種硏漿有相 同且低的pH値，而可以使用同一個硏磨墊。傳統的方法必 須使用兩個硏磨墊，通常意指兩種不同的硏磨狀態，一種 是裝置硏磨墊和硏漿以移除鎢，第二種裝置是另一不同的 硏磨墊和另一不同的硏漿以硏磨底層的介電層。第一種硏 漿傳統上其pH値範圍爲2〜4，第二種硏漿傳統上其pH値 範圍爲.10〜11.5。本發明的較佳實施例包括第一和第二硏漿 分別做爲硏磨鎢和硏磨氧化層，其pH値範圍約爲2〜4。 本發明的較佳實施例中，硏漿的顆粒大小、硏漿混合 物的比重、以及硏磨墊的硬度和壓縮性，控制著鎢硏磨製 程中發生刮傷的程度。申請人發現小心地控制硏漿混合物 的pH値，則對鎢和氧化物硏磨的步驟可以不必分別使用獨 立的硏磨狀態。本發明化學機械硏磨製程的較佳實施例， 利用低pH値的硏漿，來移除多餘鎢和硏磨絕緣層。例如， 第一硏漿包括H20、ai2o3硏磨性粒子、和做爲氧化劑組成 9 ----------- (請先閱讀背面之注意事項再填寫本頁)494537 1917twf.DOC / 005 A7 _____ B7___ V. Description of the invention 0) Selective slurry is used as the flattening process of the tungsten in the dielectric layer and the dielectric window. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling this page) Figure 1 shows the traditional chemical mechanical honing device. The wafer 10 is fixed to a wafer carrier 12 (wafer carrier) on a rotating platen. The wafer load 12 will generate a large force on the wafer 10 and attach to the rotating spindle 20, so the wafer 10 Rotates independently of the turntable 14. A honing pad 16 is placed on the rotating table 14 and a polishmg slurry is provided on the surface of the honing pad 16. As shown in FIG. 2, the wafer loader 12 includes a chuck 22 (chuck) and a support layer 24 (backing fUm). The support layer 24 is interposed between the wafer 10 and the chuck 22 to provide a certain degree of elasticity between the chuck 22 and the wafer 10. If the wafer 10 is held too tightly by the chuck 22, any particles or non-planar defects on the chuck 22 will be transferred to the wafer 10 and cause the wafer 10 to have micro scratches or defects. One or more honing pads 16 may be used to provide a degree of elasticity between the wafer 10 and the rotary table 14. If the contact between the honing pad 16 and the wafer 10 is too hard, the risk of wafer breakage is increased. If the honing pad 16 is too soft, substances not intended to be honed and unevenness will be removed from the surface of the wafer 10, thereby causing deformation of the wafer 10, and the surface of the final structure will be more uneven than expected. The honing pad 16 generally remains a bit rough, and its ridges are about 1 to 10 μm in size to support and transfer the honing slurry 18. The correct mechanisms for chemical mechanical planarization are complex and poorly understood. Many changes in chemical mechanical honing are related to the chemical and mechanical parts. Chemical-related factors include the type of mortar, the pH of the mortar, the particle size of the mortar, the flow of the mortar, and the process temperature. Mechanically related factors include honing pressure, back pressure, rotary table speed, and type of honing pad. Typical mortar mix is acid __ 5 This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 mm) ~ 494537 1917twf.DOC / 005 A7 B7 V. Description of the invention (if) (Please read the note on the back first Please fill out this page again) or alkali 'and abrasive substances such as sand dioxide. For honing and removal of a metal layer such as tungsten, a tungsten chemical mechanical honing method in a one-step process using a composition containing an oxidizing agent such as h2O2 at pH 2 to 4. In the second step of the tungsten chemical mechanical honing method, for honing or planarizing the oxide layer, a test solution such as KOH having a pH of 10 to 11.5 is used. For uniform honing, it is generally desirable that (1) each point on the wafer has the same rate with respect to the honing pad, (2) the slurry under the wafer is uniformly distributed, and (3) the symmetry of the wafer. The two steps of the process of removing excess tungsten metal and polishing the bottom insulating layer are usually performed under different honing conditions, or the honing pad is changed between the first and second chemical mechanical honing processes. Because the difference between the first and second honing pastes is used to honing the metal layer and the insulating layer, the first and second chemical mechanical honing steps do not use the same honing pad. If the same honing pad is used, it will cause instability in pH and particle generation problems, because an acid-base reaction occurs between the first acidic mortar and the second alkaline mortar, and unexpected particles will precipitate. On the honing pad. Therefore, the two-step process will lead to a time-consuming, expensive and unexpected event in the tungsten chemical mechanical honing process. In order to achieve the above and other objectives of the invention, a consumer mechanical cooperative of the Central Bureau of Standards of the Ministry of Economics, a chemical mechanical honing method using a low-pH mortar slurry, includes: providing a semiconductor wafer including a dielectric layer, and A metal layer is formed on at least part of the dielectric layer; at least one honing pad is provided for chemical mechanical honing; a first honing slurry mixture having a pH range of about 2 to 4 is provided for honing the metal Layer to leave the exposed surface of the dielectric layer; and to provide a second slurry mixture with a pH range of about 2 to 4 for honing the dielectric layer, after the step of honing the metal layer, Grind the dielectric layer. 6 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 494537 1917twf.DOC / 005 A7 B7 5. Description of the invention (Γ) Another preferred embodiment of the present invention includes: providing a dielectric layer Forming at least one dielectric window through the dielectric layer; forming a tungsten layer in the dielectric window and on the dielectric layer; then performing a first chemical mechanical honing step and using a first slurry to remove the dielectric layer Tungsten layer, the first slurry is composed of an oxidant having a pH range of about 2 to 4; a second chemical mechanical honing step is performed, and a second slurry is used to remove the dielectric layer. The slurry is composed of an oxidant having a pH range of about 2 to 4. Another preferred embodiment of the present invention includes: providing a dielectric layer on two substrates; providing at least one dielectric window through the dielectric layer; providing a tungsten plug in the dielectric window, and a tungsten layer on On at least a part of the dielectric layer; providing a first slurry including the abrasive particles with a pH range of about 2 to 4; providing a second slurry including the abrasive particles with a pH range of about 2 to 4; providing a honing pad on a chemical mechanical honing device; performing a first chemical mechanical honing step on the honing pad using the first hafnium purple to remove the tungsten layer on the dielectric layer; and using on the honing pad The second honing slurry is subjected to a second chemical mechanical honing step to honing the dielectric layer. Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the notes on the back before filling this page) In order to make the above and other objects, features, and advantages of the present invention more obvious and understandable, the text is particularly preferred The embodiments are described in detail with the accompanying drawings as follows: Brief description of the drawings: FIG. 1 is a perspective view showing a conventional chemical mechanical honing device. Figure 2 shows a side view of a conventional chemical mechanical honing device. Figures 3 to 10 show the formation of a structure including chemical mechanical honing according to a preferred embodiment of the present invention. 7 This paper size applies the Chinese National Standard (CNS) M specification (210X297 mm) 494537 1917twf.DOC / 005 A7 B7 V. Description of the invention (6) Among them, the relationship between each icon number and component name is as follows: 1 〇: Wafer 12 : Wafer loader 14: Rotary table 16, 44: Honing 塾 18: Mortar 20: Rotary shaft 22: Chuck ^ Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs (Please read the precautions on the back before filling out this page ) 24: Support layer 30: First wire layer 32: Dielectric layer 34: Contact window 36: Barrier layer or adhesion layer 38: Tungsten plug 42: First paste 46: Scratch 48: Second paste 50 : Second barrier layer 52: Example of conductive layer Traditional tungsten chemical mechanical honing technology includes a multi-step process, using a first slurry to remove excess tungsten from the dielectric layer, and a second slurry for honing or grinding Light scratches formed on the surface of the dielectric layer during the above-described honing step of tungsten. The traditional method must use two different honing pads for different mortars. The paper size of 8 papers applies to the Chinese National Standard (CNS) A4 (210X297 mm). It is printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 494537 1917twf. D〇C / 0〇5 A7-B7 V. Description of the Invention (9) It usually means two different honing states. One is the device of honing pad and the slurry to remove tungsten. The second device is the other Different honing pads and a different honing paste to hoard the underlying dielectric layer. The first type of mash has traditionally had a pH range of 2 to 4. The second type of mash has traditionally had a pH range of 10 to 11.5. Therefore, two different honing pads or honing states are required, resulting in a slower than expected output of the tungsten chemical mechanical honing process. The chemical mechanical honing process of a preferred embodiment of the present invention includes honing excess tungsten and the underlying dielectric layer after the excess tungsten is removed using the same honing pad. The inventors of the present invention have found that the first slurry used to remove tungsten and the second slurry used as an insulating layer for honing the bottom layer can be used by arranging the two slurry to have the same and low pH. A honing pad. The traditional method must use two honing pads, which usually means two different honing states, one is to install the honing pad and the slurry to remove tungsten, and the second is a different honing pad and another A different slurry is used to hob the underlying dielectric layer. The first type of mash has traditionally had a pH 2 range of 2 to 4, and the second type of mash has traditionally had a pH 値 range of .10 to 11.5. The preferred embodiment of the present invention includes the first and second honing slurry as the honing tungsten and the honing oxide layer, respectively, and the pH range thereof is about 2 ~ 4. In the preferred embodiment of the present invention, the particle size of the honing slurry, the specific gravity of the honing slurry mixture, and the hardness and compressibility of the honing pad control the degree of scratching during the tungsten honing process. The applicant has found that the pH of the slurry mixture is carefully controlled, so that the steps of honing tungsten and oxide may not require separate honing conditions. In a preferred embodiment of the chemical-mechanical honing process of the present invention, a low-pH hafnium slurry is used to remove excess tungsten and the honing insulating layer. For example, the first paste contains H20, ai2o3 abrasive particles, and as an oxidant composition 9 ----------- (Please read the precautions on the back before filling this page)
-、1T 平 均 經濟部中央標準局員工消費合作社印製 494537 1917twf.DOC/005 八7 B7 五、發明説明（δ ) 的Fe(N〇3)3。在本發明中Fe(N〇3)3占硏漿混合液中約5〜1〇 %。其他氧化劑組成比如κιο3或h2o2也可以使用。絕緣層 硏磨步驟中所使用的第二硏漿之pH値範圍約爲2〜4。 本發明的較佳實施例包括形成一晶片，其晶片已包括 有第一層的導線結構，內層介電層沈積於其上，之後形成 的介層窗穿過內層介電層並曝露出部分的第一層導線，接 著將金屬沈積在介層窗內以形成插塞（plug)。然後第二層 的導線形成於內層介電層上，並用插塞將第一層導線連 到其他的導體。在導線間的內層介電層常以矽酸四乙酯 (TEOS)爲前趨氣體（precursor gas)，利用常壓化學氣 相沈積法(atmospheric pressure chemical vapor deposition, APCVD )或電發增強化學氣相沈積法（plasma-enhanced chemical vapor deposition，PECVD)來沈積氧化物質。如第 3圖所示，此結構包括內層介電層32形成於第一導線層30 上，形成接觸窗34穿過介電層32。障阻（barrier)或黏著 (adhesion)層36沈積在介電層32上和介層窗34內，如 第4圖所示。障阻層36是由鈦（titanium)或氮化鈦（titanium nitride)所形成。然後在介層窗34內和介電層32上形成鎢 插塞38，如第5圖所示。以WF6爲氣源（source gas)利用 鎢的化學氣相沈積法形成鎢插塞38。 當鎢沈積完後，晶片移轉到化學機械硏磨站，進行從 氧化層32的表面移除多餘的鎢金屬，多餘的鎢38藉著與 硏磨墊44上的第一硏漿混合液42接觸而被帶走，如第6 圖所示。硏漿混合液42的pH値範圍約爲2〜4，且包括將 10 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ---------— (請先閲讀背面之注意事項再填寫本頁) 訂 494537 1917twf.DOC/005 A7 B7 五、發明説明（了） 鎢氧化的氧化劑組成。此第〜化學機械硏磨步驟可能導致 底層之氧化層32之刮痕46的形成，如第7圖所示。由於 第一硏漿對鎢的選擇性，使第〜化學機械硏磨步驟也可能 從介層窗38移除部份的鎢。之後，進行第二化學機械硏磨 步驟二首先停止第一硏漿對硏磨墊44的供應，接著開始供 應第一硏漿48，用以硏磨氧化層32並包括刮痕46，如第8 圖所示。第二硏漿4S的pH値範圍亦約爲2〜4，因此當第 二硏漿導入硏磨墊44時可避免pH値的不穩定。第二化學 機械硏磨步驟將優先硏磨氧化層，移走刮痕46，並產生平 坦的表面，如第9圖所示。 當化學機械硏磨步驟完成後，氧化層32上的阻障層36 會被移除，並會在氧化層32和插塞38上再沈積第二阻障 層5〇。接著在第二阻障層5〇上沈積導電層52比如鋁，並 與插塞38做電性接觸，鋁層52和阻障層5〇的定義可以用 傳統的方法進行，以形成第二層導線層，如第1〇圖所示。 八本發日^除了可應用在鎢的化學機械硏磨法外，亦可應 用於金屬鑲嵌（damascene)技術中，對金屬鋁和銅的化學 機械硏磨步驟上。 本發明描述的製程與用在積體電路元件不同物質範圍 一致。然而本發明已以一特殊型態的層結構和特殊的導線 結構揭露如上，雖然本發明已以一較佳實施例揭露如上， 本方法沒有要求介層窗或其他導電和絕緣的物質呈現。任 何熟習此技藝者，在不脫離本發明之精神和範圍內，當可 作各種之更動與潤飾，因此本發明之保護範圍當視後附之 申請專利範園所界定者爲準。 尽紙張尺度適用f關家樣準（CNS) 21()><297公瘦） —-------— (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局員工消費合作社印製-, 1T average printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 494537 1917twf.DOC / 005 8 7 B7 5. Fe (N〇3) 3 of the invention description (δ). In the present invention, Fe (N03) 3 accounts for about 5 to 10% of the slurry mixture. Other oxidant compositions such as κιο3 or h2o2 can also be used. The pH range of the second slurry used in the insulating layer honing step is about 2 to 4. A preferred embodiment of the present invention includes forming a wafer, the wafer already includes a first layer of wire structure, an inner dielectric layer is deposited thereon, and a dielectric window formed thereafter passes through the inner dielectric layer and is exposed. A portion of the first layer of wires is then deposited into the via to form a plug. The second layer of wires is then formed on the inner dielectric layer, and the first layer of wires is connected to other conductors with plugs. The inner dielectric layer between the wires often uses tetraethyl silicate (TEOS) as the precursor gas. Atmospheric pressure chemical vapor deposition (APCVD) or electro-enhanced chemistry is used. A vapor-enhanced chemical vapor deposition (PECVD) method is used to deposit oxidizing substances. As shown in FIG. 3, the structure includes an inner dielectric layer 32 formed on the first wiring layer 30, and a contact window 34 is formed to pass through the dielectric layer 32. A barrier or adhesion layer 36 is deposited on the dielectric layer 32 and within the dielectric window 34, as shown in FIG. The barrier layer 36 is formed of titanium or titanium nitride. Tungsten plugs 38 are then formed in the dielectric window 34 and on the dielectric layer 32, as shown in FIG. A tungsten plug 38 is formed using WF6 as a source gas by a chemical vapor deposition method of tungsten. After the tungsten deposition is completed, the wafer is transferred to a chemical mechanical honing station to remove excess tungsten metal from the surface of the oxide layer 32. The excess tungsten 38 is mixed with the first honing slurry 42 on the honing pad 44 by Touched and taken away, as shown in Figure 6. The pH range of the slurry solution 42 is about 2 ~ 4, and it includes applying 10 paper sizes to the Chinese National Standard (CNS) A4 specification (210X297 mm) ---------— (Please read first Note on the back, please fill out this page) Order 494537 1917twf.DOC / 005 A7 B7 V. Description of the invention (the) Oxidant composition of tungsten oxidation. This CMP step may result in the formation of scratches 46 on the underlying oxide layer 32, as shown in FIG. Due to the selectivity of the first slurry to tungsten, it is also possible to remove a portion of the tungsten from the interlayer window 38 through the CMP step. After that, the second chemical mechanical honing step 2 is performed. First, the supply of the first honing slurry to the honing pad 44 is stopped, and then the supply of the first honing slurry 48 is started, for honing the oxide layer 32 and including the scratch 46, as described in Section 8. As shown. The pH range of the second mortar 4S is also about 2 to 4. Therefore, when the second mortar is introduced into the honing pad 44, the instability of the pH is avoided. The second chemical-mechanical honing step preferentially hones the oxide layer, removes the scratches 46, and produces a flat surface, as shown in FIG. After the CMP honing step is completed, the barrier layer 36 on the oxide layer 32 is removed, and a second barrier layer 50 is deposited on the oxide layer 32 and the plug 38. Next, a conductive layer 52 such as aluminum is deposited on the second barrier layer 50 and is in electrical contact with the plug 38. The definition of the aluminum layer 52 and the barrier layer 50 can be performed by conventional methods to form a second layer. The wire layer is shown in FIG. 10. In addition to the chemical-mechanical honing method of tungsten, it can also be applied to the chemical-mechanical honing step of metal aluminum and copper in damascene technology. The process described in this invention is consistent with the different material ranges used in integrated circuit components. However, the present invention has been disclosed as above with a special type of layer structure and special wire structure. Although the present invention has been disclosed as above with a preferred embodiment, the method does not require the presence of a via window or other conductive and insulating material. Anyone skilled in this art can make various modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the scope of the attached patent application park. Applicable to the family standards (CNS) 21 () < 297 male thin) as far as the paper size is concerned ----------- (Please read the notes on the back before filling this page) Set the central standard of the Ministry of Economic Affairs Printed by Bureau Consumers Cooperative