Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/01—Manufacture or treatment
  • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
  • H10B12/03—Making the capacitor or connections thereto
  • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
  • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
  • H01L28/40—Capacitors
  • H01L28/60—Electrodes
  • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
  • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
  • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/01—Manufacture or treatment
  • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
  • H10B12/03—Making the capacitor or connections thereto
  • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
  • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
  • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments

Landscapes

• Engineering & Computer Science (AREA)
• Power Engineering (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Semiconductor Memories (AREA)
• Semiconductor Integrated Circuits (AREA)
• Thin Film Transistor (AREA)
• Non-Volatile Memory (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=6463664

Family Applications (1)

Country Status (7)

Families Citing this family (7)

Family Cites Families (3)

• 1992
  • 1992-06-30 DE DE4223878A patent/DE4223878C2/de not_active Expired - Fee Related
• 1993
  • 1993-06-17 TW TW082104831A patent/TW230833B/zh not_active IP Right Cessation
  • 1993-06-24 WO PCT/DE1993/000550 patent/WO1994000873A1/de active IP Right Grant
  • 1993-06-24 DE DE59310206T patent/DE59310206D1/de not_active Expired - Lifetime
  • 1993-06-24 AT AT93912617T patent/ATE205333T1/de not_active IP Right Cessation
  • 1993-06-24 EP EP93912617A patent/EP0647355B1/de not_active Expired - Lifetime
  • 1993-06-24 KR KR1019940704840A patent/KR100252331B1/ko not_active IP Right Cessation
  • 1993-06-24 JP JP50194694A patent/JP3654898B2/ja not_active Expired - Lifetime

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