TW202436591A - Phosphor and light emitting device - Google Patents
Phosphor and light emitting device Download PDFInfo
- Publication number
- TW202436591A TW202436591A TW112143342A TW112143342A TW202436591A TW 202436591 A TW202436591 A TW 202436591A TW 112143342 A TW112143342 A TW 112143342A TW 112143342 A TW112143342 A TW 112143342A TW 202436591 A TW202436591 A TW 202436591A
- Authority
- TW
- Taiwan
- Prior art keywords
- fluorescent
- light
- powder
- phosphor
- wavelength
- Prior art date
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title abstract description 62
- 239000000843 powder Substances 0.000 claims abstract description 84
- 239000002245 particle Substances 0.000 claims abstract description 57
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 8
- 230000005284 excitation Effects 0.000 claims description 21
- 239000000203 mixture Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 12
- 238000002310 reflectometry Methods 0.000 claims description 11
- 238000012986 modification Methods 0.000 claims description 10
- 230000004048 modification Effects 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 8
- 230000001186 cumulative effect Effects 0.000 claims description 6
- 238000000790 scattering method Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 3
- 238000000985 reflectance spectrum Methods 0.000 claims description 3
- 150000001342 alkaline earth metals Chemical class 0.000 abstract description 2
- 238000000137 annealing Methods 0.000 description 26
- 239000002994 raw material Substances 0.000 description 25
- 239000007789 gas Substances 0.000 description 21
- 238000010304 firing Methods 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 16
- 239000013078 crystal Substances 0.000 description 15
- 239000011812 mixed powder Substances 0.000 description 15
- 238000005259 measurement Methods 0.000 description 11
- 238000002835 absorbance Methods 0.000 description 9
- 239000011575 calcium Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000004020 luminiscence type Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 229920000995 Spectralon Polymers 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000002189 fluorescence spectrum Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 3
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- -1 barium nitride Chemical class 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- IDBFBDSKYCUNPW-UHFFFAOYSA-N lithium nitride Chemical compound [Li]N([Li])[Li] IDBFBDSKYCUNPW-UHFFFAOYSA-N 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical group N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 150000002642 lithium compounds Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910010100 LiAlSi Inorganic materials 0.000 description 1
- 229910012506 LiSi Inorganic materials 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- VQHHOXOLUXRQFQ-UHFFFAOYSA-L dipotassium;4,5,6,7-tetrachloro-2',4',5',7'-tetraiodo-3-oxospiro[2-benzofuran-1,9'-xanthene]-3',6'-diolate Chemical compound [K+].[K+].O1C(=O)C(C(=C(Cl)C(Cl)=C2Cl)Cl)=C2C21C1=CC(I)=C([O-])C(I)=C1OC1=C(I)C([O-])=C(I)C=C21 VQHHOXOLUXRQFQ-UHFFFAOYSA-L 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000011978 dissolution method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 description 1
- 235000019982 sodium hexametaphosphate Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Abstract
Description
本發明係關於螢光體,及發光裝置。The present invention relates to a fluorescent body and a light emitting device.
為了製造白色LED(Light Emitting Diode),通常會使用螢光體。即,作為用於從藍色LED發出的藍光獲得白光的波長變換材料,會使用螢光體。 隨著照明用途中的白色LED之普及、針對圖像顯示裝置採用白色LED之探討等,而繼續進行能夠變換為相較於藍光更長波長的光的螢光體的開發。 In order to manufacture white LEDs (Light Emitting Diodes), a phosphor is usually used. That is, a phosphor is used as a wavelength conversion material for obtaining white light from blue light emitted by a blue LED. With the popularization of white LEDs for lighting purposes and the discussion of using white LEDs for image display devices, the development of phosphors that can convert light into longer wavelengths than blue light continues.
作為如此之螢光體之一,例如,專利文獻1記載一種螢光體,其以通式M x(Si,Al) 2(N,O) 3±y(惟,M係Li及一種以上的鹼土類金屬元素,0.52≦x≦0.9,0.06≦y≦0.23)表示,且M的一部分被Ce元素取代,Si/Al原子比為1.5以上6以下,且O/N原子比為0以上0.1以下,M的5~50mol%為Li,M的0.5~10mol%為Ce。 [先前技術文獻] [專利文獻] As one of such phosphors, for example, Patent Document 1 describes a phosphor represented by the general formula M x (Si, Al) 2 (N, O) 3±y (however, M is Li and one or more alkaline earth metal elements, 0.52≦x≦0.9, 0.06≦y≦0.23), a part of M is substituted by Ce element, Si/Al atomic ratio is 1.5 to 6, O/N atomic ratio is 0 to 0.1, 5 to 50 mol% of M is Li, and 0.5 to 10 mol% of M is Ce. [Prior Art Document] [Patent Document]
[專利文獻1]日本專利第5969391號公報[Patent Document 1] Japanese Patent No. 5969391
[發明所欲解決之課題][The problem that the invention wants to solve]
然而,本案發明人探討的結果,了解到上述專利文獻1記載的螢光體中,螢光特性方面尚有改善的餘地。 [解決課題之手段] However, the inventors of this case have found through research that the fluorescent properties of the fluorescent body described in the above-mentioned patent document 1 still have room for improvement. [Means for solving the problem]
本案發明人,將提供螢光特性優良的螢光體粉末作為目的之一,進行了本次探討。The inventors of this case conducted this research with the aim of providing a fluorescent powder having excellent fluorescent properties.
本案發明人們,探討的結果,乃至完成以下提供的發明。The inventors of this case, as a result of their discussions, even completed the invention provided below.
根據本發明之一態樣,提供了以下的螢光體,及發光裝置。 1. 一種螢光體粉末,包含以通式M x(Si,Al) 2(N,O) 3±y表示且M的一部分被Ce元素取代的螢光體的粒子,惟,M係Li及一種以上之鹼土類金屬元素,0.52≦x≦0.90,0≦y≦0.36, 該螢光體的粒子的表面之一部分含有隆起的表面改質部。 2. 如1.之螢光體粉末,其中,該表面改質部包含扁平狀結構。 3. 如1.或2.之螢光體粉末,其中,該表面改質部包含氧化物或氫氧化物。 4. 如1.至3.中任一項之螢光體粉末,其中,利用雷射繞射散射法測定的該螢光體粉末的體積頻率粒度分布中,令從小粒子側的累積體積成為50%之點的粒徑為D 50時,D 50為8μm以上25μm以下。 5. 如1.至4.中任一項之螢光體粉末,其中,該螢光體之構成係使M之2mol%以上5mol%以下為Ce。 6. 一種螢光體,係如1.至5.中任一項之螢光體粉末,其中,在500~850nm之波長範圍測定該螢光體的擴散反射率頻譜時,對於波長700nm之光的擴散反射率X1與對於照射455nm之激發光時的螢光峰波長之光的擴散反射率X2之差值X1-X2,為3.0%以下。 7. 一種螢光體,係如1.至6.中任一項之螢光體粉末,其中,對於照射455nm之激發光時的螢光峰波長之光的擴散反射率X2為88%以上97%以下。 8. 一種螢光體,係如1.至7.中任一項之螢光體粉末,其中,照射455nm之激發光時的螢光峰的波長為580nm以上610nm以下。 9. 一種螢光體,係如1.至8.中任一項之螢光體粉末,其中,照射455nm之激發光時的螢光峰的半高寬為130nm以上142nm以下。 10. 一種發光裝置,具備如1.至9.中任一項之螢光體粉末及發光光源。 [發明之效果] According to one aspect of the present invention, the following phosphors and light-emitting devices are provided. 1. A phosphor powder, comprising phosphor particles represented by the general formula M x (Si,Al) 2 (N,O) 3±y , wherein a portion of M is substituted by a Ce element, but M is Li and one or more alkali earth metal elements, 0.52≦x≦0.90, 0≦y≦0.36, and a portion of the surface of the phosphor particles contains a raised surface modification portion. 2. The phosphor powder as described in 1., wherein the surface modification portion comprises a flat structure. 3. The phosphor powder as described in 1. or 2., wherein the surface modification portion comprises an oxide or a hydroxide. 4. The fluorescent powder as described in any one of 1. to 3., wherein, in the volume frequency particle size distribution of the fluorescent powder measured by laser diffraction scattering method, when the particle size at the point where the cumulative volume from the small particle side becomes 50% is D 50 , D 50 is 8 μm or more and 25 μm or less. 5. The fluorescent powder as described in any one of 1. to 4., wherein the composition of the fluorescent material is such that 2 mol% or more and 5 mol% or less of M is Ce. 6. A fluorescent body, which is a fluorescent body powder as described in any one of 1. to 5., wherein, when the diffuse reflectance spectrum of the fluorescent body is measured in the wavelength range of 500-850nm, the difference X1-X2 between the diffuse reflectance X1 for light of wavelength 700nm and the diffuse reflectance X2 for light of peak fluorescence wavelength when irradiated with excitation light of 455nm is 3.0% or less. 7. A fluorescent body, which is a fluorescent body powder as described in any one of 1. to 6., wherein the diffuse reflectance X2 for light of peak fluorescence wavelength when irradiated with excitation light of 455nm is 88% or more and 97% or less. 8. A fluorescent body, which is a fluorescent body powder as described in any one of 1. to 7., wherein the wavelength of the fluorescent peak when irradiated with 455nm excitation light is 580nm to 610nm. 9. A fluorescent body, which is a fluorescent body powder as described in any one of 1. to 8., wherein the half-width of the fluorescent peak when irradiated with 455nm excitation light is 130nm to 142nm. 10. A light-emitting device, which comprises the fluorescent body powder as described in any one of 1. to 9. and a light-emitting light source. [Effect of the invention]
根據本發明,可提供螢光特性優良的螢光體粉末、使用其之發光裝置。According to the present invention, a fluorescent powder having excellent fluorescent properties and a light-emitting device using the same can be provided.
以下,針對本發明之實施形態,使用圖式進行說明。且,全部的圖式中,相同的構成元件附上相同的符號,並適當省略說明。又,圖式係概略圖,與實際的尺寸比率並不一致。The following is a description of the embodiments of the present invention using drawings. In all drawings, the same components are given the same symbols and the description is omitted as appropriate. In addition, the drawings are schematic diagrams and do not correspond to the actual size ratios.
本說明書中,數值範圍的說明中的「X~Y」之記載,只要沒有特別說明,則表示X以上Y以下。例如,「1~5質量%」代表「1質量%以上5質量%以下」。In this manual, the description of "X~Y" in the description of the numerical range means greater than X and less than Y unless otherwise specified. For example, "1~5 mass%" means "greater than 1 mass% and less than 5 mass%".
<螢光體> 本實施形態之螢光體粉末,含有以通式M x(Si,Al) 2(N,O) 3±y表示的螢光體的粒子,且通式中,M係Li及一種以上之鹼土類金屬元素,0.52≦x≦0.90,0≦y≦0.36,M的一部分被Ce元素取代。 <Phosphor> The phosphor powder of this embodiment comprises phosphor particles represented by the general formula Mx (Si,Al) 2 (N,O) 3±y , wherein M is Li and one or more alkali earth metal elements, 0.52≦x≦0.90, 0≦y≦0.36, and a part of M is substituted by Ce element.
又本實施形態之螢光體粉末,螢光體的粒子的表面之至少一部分含有隆起的表面改質部。In the fluorescent powder of this embodiment, at least a part of the surface of the fluorescent particles includes a raised surface modified portion.
根據本案發明人所見,藉由在還原性氣體環境中,於相較於燒製溫度較低的溫度將處於開放系統之螢光體粒子予以加熱之退火處理,雖然詳細的機制不清楚,但可知能夠將以通式M x(Si,Al) 2(N,O) 3±y表示的螢光體粒子的表面適當地改質。即,藉由所述退火處理,可獲得螢光體的粒子表面形成了多個表面改質部的螢光體粒子。 明白了含有表面具有如此之表面改質部的螢光體粒子的螢光體粉末,可以提升內部量子效率、於600nm的擴散反射率等發光特性,乃至完成本發明。 According to the inventors of the present invention, by annealing the fluorescent particles in an open system at a temperature lower than the firing temperature in a reducing gas environment, it is known that the surface of the fluorescent particles represented by the general formula M x (Si,Al) 2 (N,O) 3±y can be appropriately modified, although the detailed mechanism is unclear. That is, by the annealing treatment, fluorescent particles having a plurality of surface modified portions formed on the surface of the fluorescent particles can be obtained. It is understood that the fluorescent powder containing the fluorescent particles having such surface modified portions on the surface can improve the internal quantum efficiency, the diffuse reflectivity at 600nm and other luminescence characteristics, and thus the present invention is completed.
通常,已知藉由螢光體粉末的製造步驟中的粉碎處理而形成螢光體的粉碎片,且該粉碎片會附著於螢光體粒子。然而,本案發明人確認了未實施退火處理的情況中,螢光體粒子的表面雖附著螢光體的粉碎片,但表面改質部並未形成。Generally, it is known that the pulverization process in the production step of fluorescent powder forms pulverized flakes of the fluorescent body, and the pulverized flakes are attached to the fluorescent particles. However, the inventors of the present case have confirmed that when the annealing process is not performed, although the pulverized flakes of the fluorescent body are attached to the surface of the fluorescent particles, the surface modified portion is not formed.
本實施形態之螢光體粒子的表面具有的表面改質部,和上述螢光體的粉碎片,於形狀、附著態樣及組成中之至少1點以上相異。The surface modified portion on the surface of the fluorescent particles of this embodiment is different from the above-mentioned fluorescent powder pieces in at least one of the shapes, attachment patterns and compositions.
利用螢光體粒子的SEM照片,可知表面改質部亦可不像粉碎片般在粒子表面具有粉碎面而具有扁平狀結構。又,表面改質部,也可具有在與螢光體粒子的表面之間沒有內凹部分的結構。From the SEM photograph of the fluorescent particle, it can be seen that the surface modified portion may have a flat structure instead of having a crushed surface on the particle surface like a crushed piece. In addition, the surface modified portion may have a structure without a concave portion between the surface of the fluorescent particle and the surface.
表面改質部大部分不會因螢光體粒子的水洗而從表面脫落,而會維持附著於表面之狀態。然而粉碎片大部分會因螢光體粒子的水洗而從表面脫落。表面改質部,相較於粉碎片,會於螢光體粒子的表面以化學性及/或物理性進行更強力附著。Most of the surface modified part will not fall off from the surface by washing the fluorescent particles with water, but will remain attached to the surface. However, most of the crushed pieces will fall off from the surface by washing the fluorescent particles with water. The surface modified part will be more strongly attached to the surface of the fluorescent particles chemically and/or physically than the crushed pieces.
又,螢光體粉末的化學組成分析的結果,可知上述退火處理後的氧含量,相較於退火處理前會變高。由如這般的結果,詳細的機制雖不清楚,但據認為表面改質部,作為螢光體的粒子之表面經改質的物質,含有螢光體的氧化物或氫氧化物。Furthermore, the results of the chemical composition analysis of the fluorescent powder show that the oxygen content after the annealing treatment is higher than that before the annealing treatment. From such results, although the detailed mechanism is not clear, it is believed that the surface modified part, as a substance whose surface of the fluorescent particles is modified, contains an oxide or hydroxide of the fluorescent.
且,表面改質部,係藉由將通式M x(Si,Al) 2(N,O) 3±y表示的螢光體進行退火處理而形成於螢光體粒子的表面。另一方面,確認了即使結晶相為β相的矽鋁氮氧化物螢光體(所謂β型矽鋁氮氧化物螢光體)經退火處理,其表面仍未形成表面改質部。且,即使β型矽鋁氮氧化物螢光體的粒子表面有附著物體,也僅為螢光體的粉碎片。 Furthermore, the surface modified portion is formed on the surface of the phosphor particles by annealing the phosphor represented by the general formula M x (Si,Al) 2 (N,O) 3±y . On the other hand, it was confirmed that even if the silicon aluminum oxynitride phosphor whose crystal phase is the β phase (so-called β-type silicon aluminum oxynitride phosphor) is annealed, the surface modified portion is not formed on its surface. Furthermore, even if there are objects attached to the particle surface of the β-type silicon aluminum oxynitride phosphor, they are only the crushed pieces of the phosphor.
由螢光體粒子的SEM照片可見,針對多個表面改質部,可包含螢光體粒子的一個表面中,表面的一部分處於互相間隔地吸附之狀態之粒子群,亦可利用表面的一部分未露出的方式互相連結而形成被覆層。無論何種情況,螢光體粒子的表面之至少一部分,具有表面露出的部分較佳。又,多個表面改質部可形成多個條狀的被覆層,螢光體粒子亦可不具有條狀的被覆層。As can be seen from the SEM photo of the fluorescent particle, the plurality of surface modification parts may include a group of particles in which a portion of the surface of a fluorescent particle is adsorbed at intervals, or a portion of the surface is not exposed and connected to form a coating layer. In any case, it is preferred that at least a portion of the surface of the fluorescent particle has a portion exposed. In addition, the plurality of surface modification parts may form a plurality of strip-shaped coating layers, and the fluorescent particle may not have a strip-shaped coating layer.
近年來,發光裝置中的高輸出化、薄型化越來越多,螢光體安裝的發光裝置中的操作環境,有變得越來越高溫的傾向。 本實施形態之螢光體粉末,亦可以於如此之高溫環境使用。 In recent years, light-emitting devices have become increasingly high-output and thinner, and the operating environment of light-emitting devices in which fluorescent bodies are installed has tended to become increasingly hot. The fluorescent powder of this embodiment can also be used in such a high-temperature environment.
本實施形態之螢光體粉末,至少在包含於螢光體粒子的表面附著的表面改質部之方面,係與專利文獻1記載的螢光體不同。本實施形態之螢光體,相較於專利文獻1記載的螢光體,螢光特性較優良,例如,就內部量子效率方面,可將藍光以良好效率變換為長波長的光。The fluorescent powder of this embodiment is different from the fluorescent material described in Patent Document 1 at least in that it includes a surface modification part attached to the surface of the fluorescent material particles. The fluorescent material of this embodiment has better fluorescent properties than the fluorescent material described in Patent Document 1. For example, in terms of internal quantum efficiency, blue light can be converted into long-wavelength light with good efficiency.
繼續說明本實施形態之螢光體。The fluorescent body of this embodiment is further described.
(結晶結構、化學組成等) 針對螢光體結晶之骨架結構,係藉由(Si,Al)-(N,O) 4正四面體進行鍵結而構成,M元素位在其間隙。針對上述通式的組成,藉由M元素的價數及量、Si/Al比、N/O比等參數全部於保持電中性之範圍而成立。就以上述通式表示之代表的螢光體而言,有M元素為Ca且x=1,以及Si/Al=1、O/N=0之CaAlSiN 3。CaAlSiN 3的Ca之一部分被Eu取代時為紅色螢光體,被Ce取代時則為黃~橙色螢光體。 (Crystal structure, chemical composition, etc.) The skeleton structure of the phosphor crystal is formed by bonding (Si, Al)-(N, O) 4 regular tetrahedrons, and the M element is located in the gap. The composition of the above general formula is established by the parameters such as the valence and amount of the M element, the Si/Al ratio, and the N/O ratio, which are all within the range of maintaining electrical neutrality. For the representative phosphor represented by the above general formula, there is CaAlSiN 3 in which the M element is Ca and x=1, and Si/Al=1, O/N=0. When a part of Ca in CaAlSiN 3 is replaced by Eu, it becomes a red phosphor, and when it is replaced by Ce, it becomes a yellow to orange phosphor.
本實施形態之螢光體的結晶結構,通常係將CaAlSiN 3結晶作為基礎的結構。該螢光體的特徵之一為構成元素、組成顯著地變化造成即使Ce活化仍可得到非常高的發光效率。 上述通式中,M元素為Li元素及鹼土類金屬元素之組合,且其一部分被成為發光中心的Ce元素取代。藉由使用Li元素,及二價的鹼土類元素與三價的Ce元素之組合,可以在寬範圍內控制M元素的平均價數。又,Li +的離子半徑非常小,根據其量可以使結晶尺寸大幅變化,而得到多樣的螢光發光。 上述通式中的M元素的係數x,係0.52以上0.90以下,較佳為0.60以上0.90以下,更佳為0.70以上0.90以下。若係數x超過0.9,亦即接近CaAlSiN 3結晶則有螢光強度降低之傾向,若係數x小於0.52,由於會生成大量目標結晶相以外的異相故有螢光強度顯著降低的傾向。 The crystal structure of the phosphor of this embodiment is usually based on CaAlSiN 3 crystals. One of the characteristics of the phosphor is that the constituent elements and composition vary significantly, resulting in a very high luminescence efficiency even when Ce is activated. In the above general formula, the M element is a combination of the Li element and an alkali earth metal element, and a part of it is replaced by the Ce element that becomes the luminescence center. By using the Li element, and a combination of a divalent alkali earth element and a trivalent Ce element, the average valence of the M element can be controlled within a wide range. In addition, the ion radius of Li + is very small, and the crystal size can be greatly changed according to its amount, thereby obtaining a variety of fluorescent luminescence. The coefficient x of the M element in the above general formula is 0.52 or more and 0.90 or less, preferably 0.60 or more and 0.90 or less, and more preferably 0.70 or more and 0.90 or less. If the coefficient x exceeds 0.9, that is, it is close to CaAlSiN3 crystals, and the fluorescence intensity tends to decrease. If the coefficient x is less than 0.52, a large amount of heterophases other than the target crystal phase will be generated, so the fluorescence intensity tends to decrease significantly.
上述通式中的(N,O)之係數y,宜為0以上0.36以下較佳,0以上0.30以下更佳,0以上0.23以下再更佳。藉此,螢光強度會被提高。The coefficient y of (N, O) in the above general formula is preferably 0 to 0.36, more preferably 0 to 0.30, and even more preferably 0 to 0.23. Thereby, the fluorescence intensity is improved.
本實施形態中,O/N原子比(莫耳比),係0以上0.1以下,較佳為0.01以上0.08以下,更佳為0.02以上0.07以下。若O/N原子比過大則異相生成量會增大、發光效率會降低,且結晶的共價鍵性會降低,會有引起溫度特性惡化(在高溫的亮度降低)之傾向。In this embodiment, the O/N atomic ratio (molar ratio) is greater than 0 and less than 0.1, preferably greater than 0.01 and less than 0.08, and more preferably greater than 0.02 and less than 0.07. If the O/N atomic ratio is too large, the amount of heterogeneous phase generation will increase, the luminescence efficiency will decrease, and the covalent bonding of the crystal will decrease, which will tend to cause deterioration of temperature characteristics (reduction of brightness at high temperatures).
針對Si/Al原子比(莫耳比),通常若M元素的平均價數、量,及O/N原子比設定為特定範圍,則必然可決定。Si/Al原子比係1.5以上6以下,較佳為2以上4以下,更佳為2.5以上4以下。The Si/Al atomic ratio (molar ratio) can be determined if the average valence and amount of the M element and the O/N atomic ratio are set to a specific range. The Si/Al atomic ratio is 1.5 to 6, preferably 2 to 4, and more preferably 2.5 to 4.
螢光體中的Li含量,係M元素的5~50mol%,較佳為15~49mol%,更佳為25~48mol%。5mol%以上的話Li的效果容易發揮,若超過50mol%則無法維持目標螢光體的結晶結構且會生成異相,且發光效率容易降低。 慎重起見先行說明,「Li含量」,係最終得到的螢光體中的Li含量,並非原料摻合基礎的量。原料使用的Li化合物之蒸氣壓高而容易揮發,於高溫下欲合成氮化物/氧氮化物的情況中,相當的量會揮發。亦即,原料基礎的Li量因與最終產物中的含量大幅偏離,故不代表螢光體中的Li含量。 The Li content in the phosphor is 5-50 mol% of the M element, preferably 15-49 mol%, and more preferably 25-48 mol%. The effect of Li is easy to be exerted when it is above 5 mol%. If it exceeds 50 mol%, the crystal structure of the target phosphor cannot be maintained and heterogeneous phases will be generated, and the luminescence efficiency is easy to decrease. For the sake of caution, it is explained in advance that "Li content" refers to the Li content in the final phosphor, not the amount based on the raw material doping. The vapor pressure of the Li compound used in the raw material is high and it is easy to evaporate. When synthesizing nitrides/oxynitrides at high temperatures, a considerable amount will evaporate. In other words, the amount of Li based on the raw material is greatly deviated from the content in the final product, so it does not represent the Li content in the phosphor.
係螢光體的發光中心之Ce的含量,若過少則有對發光之貢獻變小的傾向,若過多則有發生Ce 3+間的能量傳遞所致之螢光體的濃度消光的傾向。因此,Ce的含量,係M元素的2~5mol%,較佳為2.5~5mol%。 The Ce content of the luminescent center of the phosphor. If it is too little, the contribution to luminescence tends to decrease. If it is too much, the energy transfer between Ce 3+ tends to cause concentration extinction of the phosphor. Therefore, the Ce content is 2~5mol% of the M element, preferably 2.5~5mol%.
作為上述通式中的M元素使用的鹼土類金屬元素,任意元素皆可,使用Ca時,會得到高螢光強度,且結晶結構會在寬組成範圍安定化。因此,M元素為Ca較佳。亦可為多個鹼土類金屬元素之組合,例如Ca元素的一部分亦可取代為Sr元素。The alkaline earth metal element used as the M element in the above general formula may be any element. When Ca is used, high fluorescence intensity is obtained and the crystal structure is stabilized in a wide composition range. Therefore, it is preferable that the M element is Ca. It may also be a combination of multiple alkaline earth metal elements, for example, a part of the Ca element may be replaced by the Sr element.
螢光體的結晶結構,係斜方晶系,亦可為與前述CaAlSiN 3結晶相同的結構。CaAlSiN 3結晶的晶格常數之一例,為a=0.98007nm,b=0.56497nm,c=0.50627nm。本實施形態中,晶格常數通常為a=0.93500~0.96500nm,b=0.55000~0.57000nm,c=0.48000~0.50000nm,相較於CaAlSiN 3結晶,皆係較小的值。該晶格常數之範圍,係反映前述構成元素及組成之範圍。 The crystal structure of the phosphor is an orthorhombic system, and may be the same structure as the aforementioned CaAlSiN 3 crystal. An example of the lattice constants of the CaAlSiN 3 crystal is a=0.98007nm, b=0.56497nm, c=0.50627nm. In this embodiment, the lattice constants are usually a=0.93500~0.96500nm, b=0.55000~0.57000nm, c=0.48000~0.50000nm, which are all smaller values compared to the CaAlSiN 3 crystal. The range of the lattice constants reflects the range of the aforementioned constituent elements and composition.
螢光體中存在的結晶相,宜為上述的結晶單相。惟,只要對於螢光特性沒有大幅影響,螢光體含有異相亦無妨。就藍光激發時對於螢光特性的影響低的異相而言,可列舉α矽鋁氮氧化物、AlN、LiSi 2N 3、LiAlSi 2N 4等。異相的量,係使利用粉末X射線繞射法進行評價時的其他結晶相的繞射射線強度相對於上述結晶相的最強繞射射線強度為40%以下之量較佳。 The crystalline phase present in the phosphor is preferably the above-mentioned single crystalline phase. However, the phosphor may contain a heterophase as long as it does not significantly affect the fluorescent properties. Examples of heterophases that have a low effect on the fluorescent properties when excited by blue light include α-silicon aluminum oxynitride, AlN, LiSi 2 N 3 , and LiAlSi 2 N 4 . The amount of the heterophase is preferably such that the intensity of the diffraction rays of other crystalline phases is 40% or less relative to the intensity of the strongest diffraction rays of the above-mentioned crystalline phase when evaluated by powder X-ray diffraction method.
本實施形態之螢光體,可利用紫外光~可見光之寬波長區域之光激發。例如照射了波長455nm之藍光的情況中,有時會呈現峰波長為580~610nm之橙色,且螢光頻譜的半高寬為130~142nm之寬的螢光發光。 如此之螢光體,適用於廣泛的發光裝置用螢光體。又,本實施形態之螢光體,與CaAlSiN 3為代表的習知氮化物、氧氮化物系螢光體相同,就耐熱性、耐化學的安定性優良,且具有因溫度上昇而亮度降低小之特性。如此之特性,尤其適用於需要耐久性之用途。 The phosphor of this embodiment can be excited by light in a wide wavelength range from ultraviolet light to visible light. For example, when irradiated with blue light of a wavelength of 455nm, sometimes an orange color with a peak wavelength of 580~610nm and a half-width of the fluorescence spectrum of 130~142nm will be exhibited. Such a phosphor is suitable for use in a wide range of light-emitting devices. In addition, the phosphor of this embodiment, like the known nitride and oxynitride-based phosphors represented by CaAlSiN3 , has excellent heat resistance and chemical stability, and has the characteristic of little reduction in brightness due to temperature increase. Such characteristics are particularly suitable for applications requiring durability.
(擴散反射率) 就另一觀點而言,本實施形態之螢光體之對於波長700nm之光的擴散反射率X1,宜為89%以上98%以下,更佳為91%以上98%以下,尤佳為92%以上98%以下。藉由控制X1為如此之數值範圍內,有發光強度更提高的傾向。 (Diffuse reflectivity) From another perspective, the diffuse reflectivity X1 of the fluorescent body of this embodiment for light with a wavelength of 700nm is preferably 89% to 98%, more preferably 91% to 98%, and even more preferably 92% to 98%. By controlling X1 within such a numerical range, the luminous intensity tends to be further improved.
就再一觀點而言,本實施形態之螢光體之對於螢光峰波長之光的擴散反射率X2,宜為88%以上97%以下,更佳為90%以上97%以下,尤佳為91%以上97%以下。藉由控制X2為如此之數值範圍內,有發光強度更提高的傾向。From another perspective, the diffuse reflectivity X2 of the fluorescent body of this embodiment for light of the peak wavelength of fluorescence is preferably 88% to 97%, more preferably 90% to 97%, and even more preferably 91% to 97%. By controlling X2 within such a numerical range, the luminous intensity tends to be further improved.
就再一觀點而言,X2與X1之差(X2-X1),宜為3.0%以下,更佳為2.0%以下,尤佳為0.1%以上1.8%以下。藉此,螢光體之特性會更提升。From another perspective, the difference between X2 and X1 (X2-X1) is preferably 3.0% or less, more preferably 2.0% or less, and even more preferably 0.1% or more and 1.8% or less. This further improves the properties of the fluorescent body.
就再一觀點而言,於令對於波長800nm之光的擴散反射率為X3時,X3與X1之差(X3-X1),宜為0.1%以上1.4%以下,更佳為0.1%以上1.0%以下,尤佳為0.1%以上0.8%以下。藉此,螢光體之特性會更提升。From another perspective, when the diffuse reflectivity for light with a wavelength of 800 nm is X3, the difference between X3 and X1 (X3-X1) is preferably 0.1% to 1.4%, more preferably 0.1% to 1.0%, and even more preferably 0.1% to 0.8%. In this way, the characteristics of the fluorescent body are further improved.
(粒徑分布) 藉由適當設計本實施形態之螢光體含有的粒子(螢光體粒子)的粒徑分布,有時能夠更提高量子效率,或更提高各性能之平衡。 具體而言,本實施形態之螢光體之利用雷射繞射散射法所測定的體積基準累積50%徑D50(所謂中位徑),宜為8μm以上25μm以下,更佳為10μm以上20μm以下,再更佳為12μm以上20μm以下。 (Particle size distribution) By appropriately designing the particle size distribution of the particles (fluorescent particles) contained in the fluorescent body of this embodiment, it is sometimes possible to further improve the quantum efficiency or to further improve the balance of various performances. Specifically, the volume-based cumulative 50% diameter D50 (so-called median diameter) of the fluorescent body of this embodiment measured by the laser diffraction scattering method is preferably 8 μm or more and 25 μm or less, more preferably 10 μm or more and 20 μm or less, and even more preferably 12 μm or more and 20 μm or less.
就另一觀點而言,本實施形態之螢光體之利用雷射繞射散射法所測定的體積基準累積10%徑D 10,宜為2μm以上15μm以下,更佳為5μm以上12μm以下。D 10為較大的值的話,對應於螢光體中的微粉(具有使藍光的變換效率降低之傾向的過度微細的螢光體粒子)之量較少的情況。因此,藉由使D 10為較大的值,有藍光的變換效率更高之傾向。 From another point of view, the volume basis cumulative 10% diameter D10 of the phosphor of the present embodiment measured by the laser diffraction scattering method is preferably 2 μm or more and 15 μm or less, and more preferably 5 μm or more and 12 μm or less. A larger value of D10 corresponds to a smaller amount of fine powder (excessively fine phosphor particles that tend to reduce the conversion efficiency of blue light) in the phosphor. Therefore, by making D10 a larger value, there is a tendency for the conversion efficiency of blue light to be higher.
就另一觀點而言,本實施形態之螢光體之利用雷射繞射散射法所測定的體積基準累積90%徑D 90,宜為15μm以上50μm以下,更佳為18μm以上40μm以下。D 90未過大的話,對應於螢光體中的粗大粒子之量較少的情況。D 90未過大的螢光體,對於發光裝置的色度偏差的降低係有效。 (吸光率) 就另一觀點而言,針對本實施形態之螢光體之波長700nm中的吸光率A 700,宜為1%以上10%以下,更佳為2%以上9%以下,尤佳為3%以上9%以下。藉此,會提高內部量子效率。 From another perspective, the volume basis cumulative 90% diameter D 90 of the phosphor of the present embodiment measured by the laser diffraction scattering method is preferably 15 μm to 50 μm, more preferably 18 μm to 40 μm. If D 90 is not too large, it corresponds to a situation where the amount of coarse particles in the phosphor is small. A phosphor with D 90 not too large is effective in reducing the chromaticity deviation of the light-emitting device. (Absorbance) From another perspective, the absorbance A 700 of the phosphor of the present embodiment at a wavelength of 700 nm is preferably 1% to 10%, more preferably 2% to 9%, and even more preferably 3% to 9%. Thereby, the internal quantum efficiency is improved.
就再一觀點而言,針對本實施形態之螢光體之波長600nm中的吸光率A600之值,宜為1%以上13%以下,更佳為2%以上12%以下,再更佳為3%以上11%以下。據認為藉由使A 600不要過大,螢光特性會進一步提升。 From another perspective, the absorbance A600 of the fluorescent body of this embodiment at a wavelength of 600nm is preferably 1% to 13%, more preferably 2% to 12%, and even more preferably 3% to 11%. It is believed that by making A600 not too large, the fluorescent properties will be further improved.
就再一觀點而言,本實施形態之螢光體之對於455nm之激發光的內部量子效率之值,宜為80%以上。 就再一觀點而言,本實施形態之螢光體之對於455nm之激發光的外部量子效率之值,宜為70%以上。 From another perspective, the internal quantum efficiency of the fluorescent body of this embodiment for 455nm excitation light should be 80% or more. From another perspective, the external quantum efficiency of the fluorescent body of this embodiment for 455nm excitation light should be 70% or more.
(製造方法) 本實施形態之螢光體,例如,能夠藉由包含以下(1)~(4)之一系列步驟來製造。考量適當調整螢光體表面中的表面改質部之形成之觀點,螢光體之製造步驟,包含(4)退火處理步驟較佳。 (1)原料混合粉之製備步驟 (2)燒製步驟 (3)燒製物之粉碎步驟 (4)退火處理步驟 (Manufacturing method) The phosphor of this embodiment can be manufactured, for example, by a series of steps including the following (1) to (4). From the viewpoint of appropriately adjusting the formation of the surface modification portion in the phosphor surface, the phosphor manufacturing steps preferably include (4) an annealing step. (1) Preparation step of raw material mixed powder (2) Firing step (3) Pulverization step of the sintered product (4) Annealing step
以下,具體說明(1)~(4)。Below, (1) to (4) are explained in detail.
(1)原料混合粉之製備步驟 原料混合粉之製備步驟中,通常,將適當的原料粉末予以混合,來獲得原料混合粉。 就原料粉末而言,使用構成元素之氮化物,即氮化矽、氮化鋁、氮化鋰、氮化鈰、鹼土類元素的氮化物(例如氮化鈣)等係合適。一般而言,氮化物粉末在空氣中不安定,粒子表面被氧化物層覆蓋,即使在使用了氮化物原料的情況中,就結果而言,原料中仍會含有一定程度的氧化物。在控制螢光體之O/N比的情況中,考量該等的同時,於氧不足時,亦可使氮化物的一部分成為氧化物(包含藉由加熱處理而成為氧化物之化合物)。就氧化物之例子而言,可列舉氧化鈰等。 (1) Preparation step of raw material mixed powder In the preparation step of raw material mixed powder, suitable raw material powders are usually mixed to obtain raw material mixed powder. As for raw material powder, nitrides of constituent elements, i.e. silicon nitride, aluminum nitride, lithium nitride, barium nitride, nitrides of alkaline earth elements (e.g. calcium nitride), etc. are suitable. Generally speaking, nitride powders are unstable in the air, and the surface of particles is covered with an oxide layer. Even when nitride raw materials are used, as a result, a certain amount of oxides will still be contained in the raw materials. In the case of controlling the O/N ratio of the phosphor, while taking these into consideration, when oxygen is insufficient, part of the nitride can also be converted into oxides (including compounds that become oxides by heat treatment). Examples of oxides include barium oxide, etc.
原料粉末之中,鋰化合物因加熱導致的揮發顯著,取決於燒製條件有時會大部分揮發。因此,鋰化合物的摻合量,考量取決於燒製條件之燒製過程的揮發量來決定較佳。Among the raw material powders, the volatility of lithium compounds due to heating is significant, and sometimes most of them are volatilized depending on the firing conditions. Therefore, the amount of lithium compounds to be added is preferably determined by considering the volatility during the firing process, which depends on the firing conditions.
氮化物原料粉末之中,氮化鋰、氮化鈰、鹼土類元素的氮化物,會與空氣中的水分劇烈地反應。因此,該等的操作於取代為不活性環境氣體的手套箱內進行較佳。 考量作業之效率性之觀點,(i)首先,將能在空氣中操作的氮化矽、氮化鋁及各種氧化物原料粉末量秤預定量,預先於空氣中充分混合來製備預備混合粉,(ii)其後,於手套箱內,將預備混合粉,和氮化鋰等容易與水分反應的物質予以混合,來製備原料混合粉較佳。 Among the nitride raw material powders, lithium nitride, barium nitride, and nitrides of alkaline earth elements react violently with moisture in the air. Therefore, it is better to perform such operations in a glove box replaced with an inactive ambient gas. Considering the efficiency of the operation, (i) first, weigh a predetermined amount of silicon nitride, aluminum nitride, and various oxide raw material powders that can be operated in air, and mix them thoroughly in air in advance to prepare a pre-mixed powder, (ii) then, in the glove box, mix the pre-mixed powder with materials that easily react with moisture, such as lithium nitride, to prepare a raw material mixed powder.
(2)燒製步驟 燒製步驟,係將(1)原料混合粉之製備步驟製備的原料混合粉填充至適當的容器,並使用燒製爐等來加熱。 (2) Firing step The firing step is to fill the raw material mixed powder prepared in (1) the raw material mixed powder preparation step into an appropriate container and heat it using a kiln or the like.
燒製的溫度,考量使反應充分進行之觀點,及考量抑制鋰的揮發之觀點,宜為1600~2000℃較佳,1700~1900℃更佳。 燒製時間,考量使反應充分進行之觀點,及考量抑制鋰的揮發之觀點,宜為2~24小時較佳,4~16小時更佳。 The firing temperature is preferably 1600~2000℃, and more preferably 1700~1900℃, from the perspective of allowing the reaction to proceed fully and from the perspective of suppressing the volatility of lithium. The firing time is preferably 2~24 hours, and more preferably 4~16 hours, from the perspective of allowing the reaction to proceed fully and from the perspective of suppressing the volatility of lithium.
燒製步驟,宜在氮氣環境下進行。又,適當地調整燒製環境氣體的壓力較佳。具體而言,燒製環境氣體的壓力,宜為0.5MPa・G以上較佳。尤其燒製溫度為1800℃以上時,有螢光體容易分解的傾向,但因燒製環境氣體的壓力高,可以抑制螢光體的分解。 順帶一提,考量工業的生產性之觀點,燒製環境氣體的壓力未滿1MPa・G較佳。 The firing step is preferably carried out in a nitrogen environment. In addition, it is better to adjust the pressure of the firing environment gas appropriately. Specifically, the pressure of the firing environment gas is preferably 0.5MPa・G or more. Especially when the firing temperature is above 1800℃, there is a tendency for the fluorescent body to decompose easily, but the high pressure of the firing environment gas can suppress the decomposition of the fluorescent body. By the way, considering the industrial productivity, it is better that the pressure of the firing environment gas is less than 1MPa・G.
填充原料混合粉的容器,由在高溫的氮氣環境下安定,且與原料混合粉、其反應產物不會反應的材質所構成者較佳。容器的材質,宜為氮化硼。The container filled with the raw material mixed powder is preferably made of a material that is stable in a high temperature nitrogen environment and does not react with the raw material mixed powder and its reaction products. The material of the container is preferably boron nitride.
(3)燒製物的粉碎步驟 (2)得到的燒製物,由於通常為塊狀,故藉由機械性地施加力並粉碎為一定程度之小尺寸較佳。 粉碎,可以使用破碎機、研鉢、球磨機、振動研磨機、噴射磨機、搗碎機等各種裝置。亦可組合該等裝置之中的2個以上來進行粉碎。後述的實施例中,首先使用搗碎機而獲得燒製物的粗粉碎物,其後,將該粗粉碎物使用噴射磨機粉碎為更細。詳細內容不清楚,但藉由進行如此之粉碎,容易獲得擴散反射率X1為88%以上99.9%以下之螢光體。 (3) Crushing step of the calcined product (2) Since the obtained calcined product is usually in block form, it is better to mechanically apply force and crush it into a certain degree of small size. For crushing, various devices such as crusher, mortar, ball mill, vibration mill, jet mill, comminuter, etc. can be used. It is also possible to combine two or more of these devices for crushing. In the embodiment described below, a coarse crushed product of the calcined product is first obtained using a comminuter, and then the coarse crushed product is crushed into a finer size using a jet mill. The details are unclear, but by performing such crushing, it is easy to obtain a fluorescent body with a diffuse reflectance X1 of 88% or more and 99.9% or less.
(4)退火處理 退火處理,係將預定量的螢光體填充至坩堝,在含氫氣的還原性氣體環境下,在燒製爐內,於預定溫度及預定時間的條件,將螢光體予以加熱。 具體而言,退火溫度,相較於上述的燒製溫度更低,為約700~1200℃較佳。退火時間,係取決於退火溫度進行適當設定。 退火時的環境氣體,具有還原性,例如,氮氣(不活潑的氣體)中含約4體積%的氫氣(還原性氣體)較佳。 使用無蓋的坩堝,且坩堝中的螢光體的填充量少較佳。因退火處理中,變得能夠使混合氣體環境與螢光體的表面充分接觸。 使用氧化鋁製之緻密的坩堝較佳。可以抑制爐內含有的成分與坩堝反應且氣體環境意外變化。 詳細的機制不確定,但據認為藉由在還原性混合氣體環境中,於較低的溫度於開放系統將螢光體予以加熱之退火處理,可以適當改質該螢光體的表面。 (4) Annealing treatment Annealing treatment is to fill a predetermined amount of phosphor into a crucible, and heat the phosphor at a predetermined temperature and for a predetermined time in a furnace in a reducing gas environment containing hydrogen. Specifically, the annealing temperature is lower than the above-mentioned firing temperature, preferably about 700~1200℃. The annealing time is appropriately set depending on the annealing temperature. The ambient gas during annealing is reducing, for example, preferably nitrogen (inactive gas) containing about 4 volume % of hydrogen (reducing gas). It is better to use an uncovered crucible and fill the crucible with a small amount of phosphor. During the annealing process, the mixed gas environment and the surface of the phosphor can be fully contacted. It is better to use a dense crucible made of alumina. It can suppress the reaction between the components contained in the furnace and the crucible and the gas environment from changing unexpectedly. The detailed mechanism is uncertain, but it is believed that the surface of the phosphor can be appropriately modified by annealing treatment in which the phosphor is heated at a relatively low temperature in an open system in a reducing mixed gas environment.
<發光裝置、圖像顯示裝置及照明裝置> 藉由組合本實施形態之螢光體與發光光源,可以獲得發光裝置。 發光光源,典型的為發出紫外線或可見光。例如,發光光源為藍色LED時,自發光光源發出的藍光會打到螢光體,然後藍光會變換為更長波長之光。即,本實施形態之螢光體,能夠使用作為變換為較藍光更長波長之光的波長變換材料。 <Light-emitting device, image display device, and lighting device> By combining the fluorescent body of this embodiment with a light-emitting light source, a light-emitting device can be obtained. The light-emitting light source typically emits ultraviolet light or visible light. For example, when the light-emitting light source is a blue LED, the blue light emitted from the light-emitting light source hits the fluorescent body, and then the blue light is converted into light of a longer wavelength. That is, the fluorescent body of this embodiment can be used as a wavelength conversion material that converts light into light of a longer wavelength than the blue light.
將發光裝置之具體的構成之一例參照圖1並進行說明。 圖1,係顯示發光裝置的結構之一例的概略剖面圖。如圖1所示,具備發光裝置100、發光元件120(發光光源)、散熱片130、外殼140、第1引線框架150、第2引線框架160、接合線170、接合線172及複合物40。 An example of a specific structure of a light-emitting device is described with reference to FIG1 . FIG1 is a schematic cross-sectional view showing an example of a structure of a light-emitting device. As shown in FIG1 , a light-emitting device 100, a light-emitting element 120 (light-emitting light source), a heat sink 130, a housing 140, a first lead frame 150, a second lead frame 160, a bonding wire 170, a bonding wire 172, and a composite 40 are provided.
發光元件120,係發出激發光的半導體元件。半導體元件,可以使用發光二極體(LED),及具備共振器的發光元件(LD)之任意者。作為發光元件120,例如,可以使用發出相當於近紫外光至藍光的300nm以上500nm以下波長之光的LED晶片。The light emitting element 120 is a semiconductor element that emits excitation light. The semiconductor element may be a light emitting diode (LED) or a light emitting element (LD) with a resonator. As the light emitting element 120, for example, an LED chip that emits light with a wavelength of 300 nm to 500 nm, which is equivalent to near-ultraviolet light to blue light, may be used.
發光元件120係安裝於散熱片130上面的特定區域。藉由於散熱片130上安裝發光元件120,可以提高發光元件120的散熱性。且,亦可使用封裝用基板來取代散熱片130。 設置於發光元件120的頂面側之其中一電極(圖未示),經由金線等接合線170與第1引線框架150的表面連接。又,形成於發光元件120的頂面的另一電極(圖未示),經由金線等接合線172與第2引線框架160的表面連接。 The light-emitting element 120 is mounted on a specific area on the heat sink 130. By mounting the light-emitting element 120 on the heat sink 130, the heat dissipation of the light-emitting element 120 can be improved. In addition, a packaging substrate can be used instead of the heat sink 130. One of the electrodes (not shown) disposed on the top surface side of the light-emitting element 120 is connected to the surface of the first lead frame 150 via a bonding wire 170 such as a gold wire. In addition, another electrode (not shown) formed on the top surface of the light-emitting element 120 is connected to the surface of the second lead frame 160 via a bonding wire 172 such as a gold wire.
於外殼140,形成有孔徑從底面向上方逐漸擴大之略為漏斗形狀之凹部。發光元件120,係設置於上述凹部的底面。圍繞發光元件120的凹部的壁面發揮反射板之作用。The housing 140 is provided with a funnel-shaped recessed portion whose aperture gradually expands from the bottom to the top. The light-emitting element 120 is disposed on the bottom of the recessed portion. The wall surface of the recessed portion surrounding the light-emitting element 120 functions as a reflector.
複合物40,係填充至以外殼140形成壁面的上述凹部中。複合物40,係將發光元件120發出之激發光變換為更長波長之光的波長變換構件。 複合物40,係於樹脂等密封材30中至少分散了本實施形態之螢光體者。為了獲得更高品質的白光,密封材30不僅包含本實施形態之螢光體,亦可包含其他螢光體。 發光裝置100,發出發光元件120之光與從吸收發光元件120發出之光而被激發的螢光體粒子1發出之光的混合色。發光裝置100,宜為藉由發光元件120之光與從螢光體粒子1產生之光的混色而發出白光。 The composite 40 is filled in the above-mentioned recessed portion whose wall is formed by the outer shell 140. The composite 40 is a wavelength conversion component that converts the excitation light emitted by the light-emitting element 120 into light of a longer wavelength. The composite 40 is a material in which at least the phosphor of the present embodiment is dispersed in the sealing material 30 such as resin. In order to obtain higher quality white light, the sealing material 30 includes not only the phosphor of the present embodiment but also other phosphors. The light-emitting device 100 emits a mixed color of the light of the light-emitting element 120 and the light emitted from the fluorescent particles 1 that are excited by absorbing the light emitted by the light-emitting element 120. The light-emitting device 100 preferably emits white light by mixing the light of the light-emitting element 120 and the light generated from the fluorescent particles 1.
另外,圖1,係例示表面安裝型之發光裝置,發光裝置不受限於表面安裝型,亦可為砲彈型、COB(板載晶片)型、CSP(晶片尺寸封裝)型。In addition, FIG. 1 illustrates a surface-mounted light-emitting device, but the light-emitting device is not limited to the surface-mounted type, and may also be a cannonball type, a COB (chip on board) type, or a CSP (chip size package) type.
就發光裝置的使用用途而言,可列舉顯示器等圖像顯示裝置、照明裝置。例如,可使用發光裝置100作為背光,來製造液晶顯示器。又,藉由使用1個或多個發光裝置100,並施加適當的配線,亦可以製造照明裝置。As for the use of the light emitting device, there can be listed image display devices such as displays and lighting devices. For example, the light emitting device 100 can be used as a backlight to manufacture a liquid crystal display. In addition, by using one or more light emitting devices 100 and applying appropriate wiring, a lighting device can also be manufactured.
以上,針對本發明之實施形態進行說明,但該等係本發明之例示,亦可採用上述以外之各種構成。又,本發明不受限於上述之實施形態,在可達成本發明之目的之範圍內的變形、改良等係包含於本發明中。 [實施例] The above is an explanation of the embodiments of the present invention, but these are examples of the present invention, and various structures other than the above can also be adopted. In addition, the present invention is not limited to the above embodiments, and modifications and improvements within the scope of achieving the purpose of the present invention are included in the present invention. [Example]
以下,針對本發明參照實施例進行詳細說明,本發明不受限於該等實施例的記載。 <螢光體粉末之製造> (比較例1) (1)原料混合粉之製備 首先,進行預備混合。具體而言,將表1記載的原料中之Si 3N 4(宇部興產公司製,E10等級)、AlN(德山公司製,E等級)及CeO 2(信越化學工業公司製,C等級)使用小型V型混合機予以30分鐘混合(乾摻混),其後,以網孔150μm之尼龍製篩進行過篩。藉此獲得預備混合粉。 然後,在氮氣環境之手套箱內,於預備混合粉,加入表1記載的剩餘原料(Ca 3N 2(太平洋水泥公司製的Ca 3N 2)及Li 3N(Materion公司製的Li 3N)),進行充分乾摻混,其後,以網孔500μm的篩進行過篩。藉此獲得原料混合粉。 The present invention is described in detail below with reference to the embodiments, but the present invention is not limited to the description of the embodiments. <Production of phosphor powder> (Comparative Example 1) (1) Preparation of raw material mixed powder First, preliminary mixing is performed. Specifically, Si 3 N 4 (manufactured by Ube Industries, Ltd., E10 grade), AlN (manufactured by Tokuyama Co., Ltd., E grade) and CeO 2 (manufactured by Shin-Etsu Chemical Co., Ltd., C grade) among the raw materials listed in Table 1 are mixed (dry blended) for 30 minutes using a small V-type mixer, and then sieved with a nylon sieve with a mesh size of 150 μm. A preliminary mixed powder is obtained. Then, in a glove box with a nitrogen atmosphere, the remaining raw materials listed in Table 1 (Ca 3 N 2 (Ca 3 N 2 manufactured by Pacific Cement) and Li 3 N (Li 3 N manufactured by Materion)) were added to the prepared mixed powder, and the mixture was thoroughly dry-blended. The mixture was then sieved with a sieve having a mesh size of 500 μm to obtain a raw material mixed powder.
(2)燒製 將原料混合粉填充至氮化硼製的容器。將該容器放入爐,並將原料混合粉於0.72MPa・G之N 2環境下,於1800℃燒製8小時。 (2) Firing The raw material mixture powder is filled into a boron nitride container. The container is placed in a furnace and the raw material mixture powder is fired at 1800°C for 8 hours in a 0.72MPa・G N2 environment.
(3)燒製物之粉碎 將(2)得到的燒製物使用搗碎機予以粉碎。重複進行搗碎機所為之粉碎直到網孔250μm之振動篩的通過率超過90%為止。 將經搗碎機所為之粉碎的燒製物進一步使用噴射磨機(Nippon Pneumatic Mfg. Co., Ltd.製,PJM-80SP)予以粉碎。粉碎條件係設為試樣供給速度:50g/min,粉碎空氣壓力:0.3MPa。 藉由以上方式,獲得螢光體粉末。 (3) Crushing of the calcined product The calcined product obtained in (2) was crushed using a pulverizer. The crushing by the pulverizer was repeated until the pass rate of the vibration screen with a mesh size of 250 μm exceeded 90%. The calcined product crushed by the pulverizer was further crushed using a jet mill (manufactured by Nippon Pneumatic Mfg. Co., Ltd., PJM-80SP). The crushing conditions were set as sample feed rate: 50 g/min, crushing air pressure: 0.3 MPa. In the above manner, a fluorescent powder was obtained.
(實施例1、2及比較例2) 對於比較例1得到的螢光體粉末實施表1記載之條件的退火處理,獲得了螢光體粉末。 該退火處理,係按表1記載的條件,將預定樣品量的螢光體粉末填充至氧化鋁製坩堝(無蓋),於表1記載的預定環境氣體下,於預定燒製爐內,以預定的最大溫度(惟,由室溫以昇溫速度3℃/min昇溫至最大溫度)、預定時間加熱已填充至坩堝的螢光體粉末。加熱後,由最大溫度以約1.3℃/min冷卻至500℃,由500℃以約1.1/℃min冷卻至300℃,於爐內冷卻至300℃以下。 且,實施例2之退火處理,相較於實施例1,將樣品量增大,並設定較高加熱溫度。比較例2之退火處理,採用不含H 2氣體而是填充了N 2氣體的環境氣體。實施例1~3中,將相對於N 2氣體混合了特定量的H 2氣體的混合氣體以大氣壓吹送導入,使其在環境氣體填充。 (Examples 1, 2 and Comparative Example 2) The fluorescent powder obtained in Comparative Example 1 was subjected to an annealing treatment under the conditions described in Table 1 to obtain a fluorescent powder. The annealing treatment was performed by filling a predetermined sample amount of fluorescent powder into an alumina crucible (without a lid) under the conditions described in Table 1, and heating the fluorescent powder filled into the crucible in a predetermined sintering furnace under a predetermined ambient gas described in Table 1 at a predetermined maximum temperature (however, the temperature was raised from room temperature to the maximum temperature at a rate of 3°C/min) for a predetermined time. After heating, the sample is cooled from the maximum temperature to 500°C at about 1.3°C/min, and from 500°C to 300°C at about 1.1/°C/min, and then cooled in the furnace to below 300°C. In addition, the annealing treatment of Example 2 increases the sample amount and sets a higher heating temperature compared to Example 1. In the annealing treatment of Example 2, an ambient gas filled with N2 gas instead of H2 gas is used. In Examples 1 to 3, a mixed gas mixed with a specific amount of H2 gas relative to N2 gas is introduced by blowing at atmospheric pressure so that it is filled in the ambient gas.
(實施例3) 對於比較例3得到的螢光體粉末實施表1記載之條件的退火處理,得到了螢光體粉末。 (Example 3) The fluorescent powder obtained in Comparative Example 3 was subjected to annealing treatment under the conditions described in Table 1 to obtain a fluorescent powder.
(比較例2) 對於β型矽鋁氮氧化物螢光體粉末(電化公司製,等級名:GR-MW540K8SD)實施表1記載之條件的退火處理,得到了β型矽鋁氮氧化物的螢光體粉末(退火處理後)。 (Comparative Example 2) The β-type silicon aluminum oxynitride fluorescent powder (manufactured by Denka Co., Ltd., grade name: GR-MW540K8SD) was subjected to annealing treatment under the conditions described in Table 1 to obtain β-type silicon aluminum oxynitride fluorescent powder (after annealing treatment).
<化學組成/結晶結構之確認> 針對一部分的螢光體粉末,如下述將組成進行分析。 Ca、Li、Ce、Si及Al的量:藉由鹼熔解法來溶解螢光體粉末,其後,利用ICP發光分光分析裝置(Agilent公司製5110VDV)進行測定。 O及N的量:利用氧氮分析裝置(HORIBA公司製,EMGA-920)進行測定。 基於測定結果,求得通式M x(Si,Al) 2(N,O) 3±y中的x、y、Si/Al原子比、O/N原子比、M中的Li比率、及M中的Ce比率。 <Confirmation of chemical composition/crystalline structure> The composition of a portion of the fluorescent powder was analyzed as follows. The amount of Ca, Li, Ce, Si and Al: The fluorescent powder was dissolved by alkali dissolution method, and then measured using an ICP emission spectrometer (5110VDV manufactured by Agilent). The amount of O and N: Measured using an oxygen and nitrogen analyzer (EMGA-920 manufactured by HORIBA). Based on the measurement results, x, y, Si/Al atomic ratio, O/N atomic ratio, Li ratio in M, and Ce ratio in M in the general formula M x (Si,Al) 2 (N,O) 3±y were determined.
對於實施例1~3之螢光體,使用X射線繞射裝置(理科股份公司製UltimaIV-N),並利用Cu-Kα射線進行粉末X射線繞射(XRD)測定。由得到的XRD圖案之解析,確認了存在主相為斜方晶系且晶格常數係a=0.9486nm,b=0.5586nm,c=0.4933nm之結晶。For the phosphors of Examples 1 to 3, powder X-ray diffraction (XRD) was measured using Cu-Kα radiation using an X-ray diffraction device (Ultima IV-N manufactured by Riko Co., Ltd.). From the analysis of the obtained XRD pattern, it was confirmed that the main phase was an orthorhombic system with lattice constants of a = 0.9486nm, b = 0.5586nm, and c = 0.4933nm.
<SEM照片> 針對得到的實施例1~3、及比較例1~3之螢光體粉末的表面,使用掃描電子顯微鏡(電子束的加速電壓:3kV,倍率:2000及5000倍)拍攝SEM照片。 圖2顯示實施例1之螢光體粉末,圖3顯示實施例2之螢光體粉末,圖4顯示實施例3之螢光體粉末。 圖5顯示比較例1之螢光體粉末,圖6顯示比較例2之螢光體粉末,圖7顯示比較例3之螢光體粉末。 <SEM photos> For the surfaces of the obtained fluorescent powders of Examples 1 to 3 and Comparative Examples 1 to 3, SEM photos were taken using a scanning electron microscope (accelerating voltage of electron beam: 3 kV, magnification: 2000 and 5000 times). Figure 2 shows the fluorescent powder of Example 1, Figure 3 shows the fluorescent powder of Example 2, and Figure 4 shows the fluorescent powder of Example 3. Figure 5 shows the fluorescent powder of Comparative Example 1, Figure 6 shows the fluorescent powder of Comparative Example 2, and Figure 7 shows the fluorescent powder of Comparative Example 3.
針對比較例1~3,由上述SEM照片,確認了平滑面露出於螢光體粒子的表面大部分,且該平滑面上附著螢光體粉碎而形成的粉碎片。又,藉由將比較例1~3之螢光體粉末予以水洗,確認了上述粉碎片可由螢光體粒子表面某程度地除去。For Comparative Examples 1 to 3, the SEM photographs confirmed that the smooth surface was exposed on most of the surface of the fluorescent particles, and the crushed pieces formed by the crushed fluorescent particles were attached to the smooth surface. In addition, by washing the fluorescent powders of Comparative Examples 1 to 3 with water, it was confirmed that the crushed pieces could be removed from the surface of the fluorescent particles to a certain extent.
另一方面,針對實施例1~3,由上述SEM照片,確認了螢光體粒子的表面存在多個隆起部分。確認了隆起部分,與上述粉碎片不同,沒有粉碎面而具有一些扁平結構的物質。 又,上述螢光體粉末的化學組成分析之結果,顯示氧元素量(重量%)係實施例1~2較比較例1高,且實施例3較比較例3高之結果。確認了即使將實施例1~3之螢光體粉末予以水洗,上述隆起部分仍幾乎未由水洗後的螢光體粒子的表面除去。由如此之結果,判斷螢光體粒子的表面之一部分形成的隆起部分,係藉由上述退火處理造成螢光體的表面改質而形成的表面改質部。 On the other hand, for Examples 1 to 3, the SEM photographs above confirmed that there were multiple raised portions on the surface of the fluorescent particles. It was confirmed that the raised portions, unlike the crushed pieces, had no crushed surface and had some flat structures. In addition, the results of the chemical composition analysis of the fluorescent powders above showed that the amount of oxygen element (weight %) was higher in Examples 1 to 2 than in Example 1, and higher in Example 3 than in Example 3. It was confirmed that even if the fluorescent powders of Examples 1 to 3 were washed with water, the raised portions were almost not removed from the surface of the fluorescent particles after washing. From such results, it was determined that the raised portions formed as part of the surface of the fluorescent particles were surface modified portions formed by the surface modification of the fluorescent particles by the annealing treatment.
<擴散反射率之測定> 擴散反射率,使用於日本分光公司製紫外可見分光光度計(V-550)安裝了積分球裝置(ISV-469)的裝置來測定。測定時,利用標準反射板(Spectralon)來進行基線校正。 安裝填充了螢光體粉末的固體試樣支架於裝置內的特定位置,並測定於500~850nm之波長範圍的擴散反射頻譜,來求得對於波長600nm之光、波長700nm之光、波長800nm之光、及螢光體粉末的螢光峰波長之光(後述)的擴散反射率。 <Measurement of diffuse reflectance> The diffuse reflectance is measured using a UV-visible spectrophotometer (V-550) manufactured by JASCO Corporation equipped with an integrating sphere device (ISV-469). During the measurement, a standard reflector (Spectralon) is used for baseline correction. The solid sample holder filled with fluorescent powder is installed at a specific position in the device, and the diffuse reflectance spectrum in the wavelength range of 500~850nm is measured to obtain the diffuse reflectance for light with a wavelength of 600nm, light with a wavelength of 700nm, light with a wavelength of 800nm, and light with the peak wavelength of the fluorescent powder (described later).
<粒徑分布之測定> 粒徑分布,藉由使用LS13 320(貝克曼庫爾特股份公司製)之按JIS R 1629:1997的雷射繞射散射法進行測定。測定溶劑使用水。 就具體的程序而言,首先,於加入了作為分散劑之六偏磷酸鈉0.05質量%的水溶液投入少量的螢光體粉末。然後,利用喇叭式的超音波均質機(輸出300W,喇叭徑26mm)進行分散處理製作分散液。將該分散液於測定溶劑適當添加並測定粒徑分布。由得到的累積體積頻率分布曲線,求得10%體積徑(D 10)、50%體積徑(D 50)及90%體積徑(D 90)。 <Measurement of particle size distribution> The particle size distribution was measured by the laser diffraction scattering method according to JIS R 1629:1997 using LS13 320 (manufactured by Beckman Coulter Co., Ltd.). Water was used as the measuring solvent. As for the specific procedure, first, a small amount of fluorescent powder was added to an aqueous solution to which 0.05 mass % of sodium hexametaphosphate was added as a dispersant. Then, a dispersion was prepared by dispersion treatment using a horn-type ultrasonic homogenizer (output 300 W, horn diameter 26 mm). The dispersion was appropriately added to the measuring solvent and the particle size distribution was measured. From the obtained cumulative volume frequency distribution curve, the 10% volume diameter (D 10 ), 50% volume diameter (D 50 ) and 90% volume diameter (D 90 ) were obtained.
<螢光頻譜之測定> 使用經以玫瑰紅B及副標準光源進行校正的分光螢光光度計(日立先端科技公司製,F-7000),測定螢光體粉末的螢光頻譜。具體而言,測定利用波長455nm的單色光使螢光體粉末激發而發出的螢光之頻譜,來求得螢光峰波長(nm)及螢光峰中的半高寬(nm)。 <Measurement of fluorescence spectrum> The fluorescence spectrum of the fluorescent powder was measured using a spectrofluorescence photometer (F-7000, manufactured by Hitachi Advanced Technologies, Inc.) calibrated with Rose Bengal B and a sub-standard light source. Specifically, the spectrum of fluorescence emitted by the fluorescent powder when excited by monochromatic light of a wavelength of 455 nm was measured to obtain the fluorescence peak wavelength (nm) and the half-width (nm) of the fluorescence peak.
<內部量子效率及外部量子效率之測定> 使用分光光度計(大塚電子股份公司製MCPD-7000),按以下程序求得各螢光體粉末的內部量子效率及外部量子效率。 (1)將螢光體粉末以表面成為平滑的方式填充至凹型槽的凹陷部分。將該凹型槽安裝於積分球內的特定位置(試樣部)。使用光纖將來自發光光源(Xe燈)且分光為455nm之波長的單色光導入至該積分球。將該單色光(激發光)照射至填充在凹型槽的凹陷部分的螢光體粉末,來測定螢光頻譜。從獲得的頻譜數據,算出激發反射光光子數(Qref)及螢光光子數(Qem)。激發反射光光子數係於450nm以上465nm以下之波長範圍算出,且螢光光子數係於465nm以上800nm以下之範圍算出。 (2)又,於試樣部安裝反射率為99%的標準反射板(Labsphere公司製Spectralon),來取代凹型槽,並測定波長455nm之激發光的頻譜。然後,從450nm以上465nm以下之波長範圍的頻譜算出激發光光子數(Qex)。 (3)從上述(1)及(2)求得的Qref、Qem及Qex,根據下式算出內部量子效率及外部量子效率。 內部量子效率=(Qem/(Qex-Qref))×100 外部量子效率=(Qem/Qex)×100 <Measurement of internal quantum efficiency and external quantum efficiency> Using a spectrophotometer (MCPD-7000 manufactured by Otsuka Electronics Co., Ltd.), the internal quantum efficiency and external quantum efficiency of each fluorescent powder were determined according to the following procedure. (1) The fluorescent powder is filled into the concave portion of the concave groove in a manner that makes the surface smooth. The concave groove is installed at a specific position (sample portion) in the integrating sphere. Monochromatic light with a wavelength of 455nm from a light emitting light source (Xe lamp) is introduced into the integrating sphere using an optical fiber. The monochromatic light (excitation light) is irradiated onto the fluorescent powder filled in the concave portion of the concave groove to measure the fluorescence spectrum. The number of excitation reflected light photons (Qref) and the number of fluorescent photons (Qem) are calculated from the obtained spectrum data. The number of photons of the excitation reflected light is calculated in the wavelength range of 450nm to 465nm, and the number of photons of the fluorescent light is calculated in the range of 465nm to 800nm. (2) In addition, a standard reflector with a reflectivity of 99% (Spectralon manufactured by Labsphere) is installed on the sample part instead of the concave groove, and the spectrum of the excitation light with a wavelength of 455nm is measured. Then, the number of excitation light photons (Qex) is calculated from the spectrum in the wavelength range of 450nm to 465nm. (3) From the Qref, Qem and Qex obtained in (1) and (2) above, the internal quantum efficiency and external quantum efficiency are calculated according to the following formula. Internal quantum efficiency = (Qem/(Qex-Qref)) × 100 External quantum efficiency = (Qem/Qex) × 100
<波長600nm中的吸光率之測定> 使用具備積分球的分光光度計(大塚電子股份公司製MCPD-7000),按以下程序求得各螢光體粉末之波長600nm中的吸光率。 (1)於積分球內的特定位置(試樣部)安裝反射率為99%的標準反射板(Labsphere公司製Spectralon),將來自發光光源(Xe燈)且分光為600nm之波長的單色光照射於標準反射板。然後,於波長595~610nm之範圍算出激發光的光子數(Qex)。 (2)將標準反射板替換為測定樣品,除此之外,與(1)同樣,算出樣品的激發反射光子數(Qref)。就測定樣品而言,使用將螢光體粉末以表面成為平滑的方式填充至凹型槽的凹陷部分者。 (3)利用式(Qex-Qref)/Qex,算出波長600nm中的吸光率A 600。 <Measurement of absorbance at a wavelength of 600 nm> Using a spectrophotometer equipped with an integrating sphere (MCPD-7000 manufactured by Otsuka Electronics Co., Ltd.), the absorbance of each fluorescent powder at a wavelength of 600 nm was determined according to the following procedure. (1) A standard reflector plate with a reflectivity of 99% (Spectralon manufactured by Labsphere) was installed at a specific position (sample portion) in the integrating sphere, and monochromatic light with a wavelength of 600 nm from a light source (Xe lamp) was irradiated onto the standard reflector plate. Then, the number of photons of the excitation light (Qex) was calculated in the wavelength range of 595 to 610 nm. (2) The number of excitation reflected photons (Qref) of the sample was calculated in the same manner as in (1), except that the standard reflector plate was replaced with the measurement sample. As the measurement sample, a sample in which the fluorescent powder is filled in the concave portion of the concave groove so that the surface becomes smooth is used. (3) The absorbance A 600 at a wavelength of 600 nm is calculated using the formula (Qex-Qref)/Qex.
<波長700nm中的吸光率之測定> 使用具備積分球的分光光度計(大塚電子股份公司製MCPD-7000),按以下程序求得各螢光體粉末之波長700nm中的吸光率。 (1)於積分球內的特定位置(試樣部)安裝反射率為99%的標準反射板(Labsphere公司製Spectralon),將來自發光光源(Xe燈)且分光為700nm之波長的單色光照射於標準反射板。然後,於波長695~710nm之範圍算出激發光的光子數(Qex)。 (2)將標準反射板替換為測定樣品,除此之外,與(1)同樣,算出樣品的激發反射光子數(Qref)。就測定樣品而言,使用將螢光體粉末以表面成為平滑的方式填充至凹型槽的凹陷部分者。 (3)利用式(Qex-Qref)/Qex,算出波長700nm中的吸光率A 700。 <Measurement of absorbance at a wavelength of 700 nm> Using a spectrophotometer equipped with an integrating sphere (MCPD-7000 manufactured by Otsuka Electronics Co., Ltd.), the absorbance of each fluorescent powder at a wavelength of 700 nm was determined according to the following procedure. (1) A standard reflector plate with a reflectivity of 99% (Spectralon manufactured by Labsphere) was installed at a specific position (sample portion) in the integrating sphere, and monochromatic light with a wavelength of 700 nm from a light source (Xe lamp) was irradiated onto the standard reflector plate. Then, the number of photons of the excitation light (Qex) was calculated in the wavelength range of 695 to 710 nm. (2) The number of photons of the sample reflected by the excitation (Qref) was calculated in the same manner as in (1), except that the standard reflector plate was replaced with the sample to be measured. As the measurement sample, a sample in which the fluorescent powder is filled in the concave portion of the concave groove so that the surface becomes smooth is used. (3) The absorbance A 700 at a wavelength of 700 nm is calculated using the formula (Qex-Qref)/Qex.
將各種資訊彙整顯示於表1。The various information is summarized in Table 1.
[表1] [Table 1]
如表1所示,實施例1~3的通式M x(Si,Al) 2(N,O) 3±y表示的螢光體粉末,相較於比較例1~3,內部量子效率、600nm中的擴散反射率等發光特性顯示為較優良的結果。 且,比較例3的β型矽鋁氮氧化物之螢光體,若實施與實施例1同樣的退火處理,則相較於退火處理前,顯示內部量子效率、600nm中的擴散反射率大幅降低之結果。 As shown in Table 1, the phosphor powders represented by the general formula M x (Si,Al) 2 (N,O) 3±y of Examples 1 to 3 show better luminescence properties such as internal quantum efficiency and diffuse reflectivity at 600nm than those of Comparative Examples 1 to 3. Moreover, the β-silicon aluminum oxynitride phosphor of Comparative Example 3, when subjected to the same annealing treatment as that of Example 1, shows a result that the internal quantum efficiency and diffuse reflectivity at 600nm are greatly reduced compared to before the annealing treatment.
本申請案主張2022年11月11日申請之日本申請案特願2022-181260號為基礎的優先權,其揭示全部併入於此。This application claims priority based on Japanese application No. 2022-181260 filed on November 11, 2022, the disclosure of which is incorporated herein in its entirety.
1:螢光體粒子 30:密封材 40:複合物 100:發光裝置 120:發光元件 130:散熱片 140:外殼 150:第1引線框架 160:第2引線框架 170:接合線 172:接合線 1: Fluorescent particles 30: Sealing material 40: Composite 100: Light-emitting device 120: Light-emitting element 130: Heat sink 140: Housing 150: First lead frame 160: Second lead frame 170: Bonding wire 172: Bonding wire
[圖1]顯示發光裝置的結構之一例的概略剖面圖。 [圖2](a)、(b)顯示實施例1之螢光體粉末的SEM照片。 [圖3](a)、(b)顯示實施例2之螢光體粉末的SEM照片。 [圖4](a)、(b)顯示實施例3之螢光體粉末的SEM照片。 [圖5](a)、(b)顯示比較例1之螢光體粉末的SEM照片。 [圖6](a)、(b)顯示比較例2之螢光體粉末的SEM照片。 [圖7](a)、(b)顯示比較例3之螢光體粉末的SEM照片。 [Figure 1] is a schematic cross-sectional view showing an example of the structure of a light-emitting device. [Figure 2] (a) and (b) show SEM photographs of the fluorescent powder of Example 1. [Figure 3] (a) and (b) show SEM photographs of the fluorescent powder of Example 2. [Figure 4] (a) and (b) show SEM photographs of the fluorescent powder of Example 3. [Figure 5] (a) and (b) show SEM photographs of the fluorescent powder of Comparative Example 1. [Figure 6] (a) and (b) show SEM photographs of the fluorescent powder of Comparative Example 2. [Figure 7] (a) and (b) show SEM photographs of the fluorescent powder of Comparative Example 3.
1:螢光體粒子 1: Fluorescent particles
30:密封材 30: Sealing material
40:複合物 40: Complex
100:發光裝置 100: Light-emitting device
120:發光元件 120: Light-emitting element
130:散熱片 130: Heat sink
140:外殼 140: Shell
150:第1引線框架 150: 1st lead frame
160:第2引線框架 160: 2nd lead frame
170:接合線 170:Joining line
172:接合線 172:Joint line
Claims (10)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022-181260 | 2022-11-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202436591A true TW202436591A (en) | 2024-09-16 |
Family
ID=
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI391472B (en) | Phosphor, production method thereof, and light-emitting apparatus using phosphor | |
JP5517037B2 (en) | Phosphor, method for manufacturing the same, and light emitting device using the same | |
WO2022102512A1 (en) | Phosphor powder, light-emitting device, image display device, and illumination device | |
TWI829904B (en) | Phosphor powder, composite and light-emitting device | |
WO2012033157A1 (en) | Β-sialon and light-emitting device | |
WO2022102511A1 (en) | Phosphor powder, light-emitting device, image display device, and illumination device | |
WO2022123997A1 (en) | Phosphor powder, light-emitting device, image display device, and illumination device | |
US20230407171A1 (en) | Phosphor powder, light-emitting device, image display device, and illumination device | |
TWI843832B (en) | Phosphor powder, composite and light-emitting device | |
TWI838523B (en) | α-TYPE SIALON PHOSPHOR, LIGHT EMITTING MEMBER AND LIGHT EMITTING DEVICE | |
TW202436591A (en) | Phosphor and light emitting device | |
TWI848088B (en) | Phosphor powder, composite and light-emitting device | |
CN111201304A (en) | Red phosphor and light-emitting device | |
WO2021193183A1 (en) | Fluorescent-substance particle, composite, luminescent device, and self-luminescent display | |
WO2024101352A1 (en) | Phosphor and light-emitting device | |
TW202434704A (en) | Phosphor and light emitting device | |
WO2024101330A1 (en) | Phosphor and light-emitting device | |
JP7252186B2 (en) | Phosphor powders, composites and light-emitting devices | |
CN118786198A (en) | Eu-activated beta-sialon phosphor particle, beta-sialon phosphor powder, and light-emitting device |