TW202314050A - Method for electrodepositing a dark chromium layer, substrate comprising same, and electroplating bath thereof - Google Patents
Method for electrodepositing a dark chromium layer, substrate comprising same, and electroplating bath thereof Download PDFInfo
- Publication number
- TW202314050A TW202314050A TW111121142A TW111121142A TW202314050A TW 202314050 A TW202314050 A TW 202314050A TW 111121142 A TW111121142 A TW 111121142A TW 111121142 A TW111121142 A TW 111121142A TW 202314050 A TW202314050 A TW 202314050A
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- Prior art keywords
- less
- substrate
- layer
- trivalent chromium
- sulfur
- Prior art date
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 title claims abstract description 143
- 229910052804 chromium Inorganic materials 0.000 title claims abstract description 107
- 239000011651 chromium Substances 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims abstract description 102
- 238000009713 electroplating Methods 0.000 title claims abstract description 80
- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 239000002245 particle Substances 0.000 claims abstract description 49
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052729 chemical element Inorganic materials 0.000 claims abstract description 16
- 150000001875 compounds Chemical class 0.000 claims description 63
- 229910052717 sulfur Inorganic materials 0.000 claims description 54
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 37
- 239000011593 sulfur Substances 0.000 claims description 37
- 230000003647 oxidation Effects 0.000 claims description 24
- 238000007254 oxidation reaction Methods 0.000 claims description 24
- 125000004434 sulfur atom Chemical group 0.000 claims description 23
- 229910001430 chromium ion Inorganic materials 0.000 claims description 21
- 238000007747 plating Methods 0.000 claims description 21
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 claims description 15
- 229930182817 methionine Natural products 0.000 claims description 15
- 239000008139 complexing agent Substances 0.000 claims description 14
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 claims description 11
- 239000002105 nanoparticle Substances 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 229920003023 plastic Polymers 0.000 claims description 9
- 239000004033 plastic Substances 0.000 claims description 9
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- 150000001413 amino acids Chemical class 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 141
- 229910052759 nickel Inorganic materials 0.000 description 70
- 235000002639 sodium chloride Nutrition 0.000 description 26
- 150000003839 salts Chemical class 0.000 description 24
- -1 polypropylene Polymers 0.000 description 22
- 229910017052 cobalt Inorganic materials 0.000 description 13
- 239000010941 cobalt Substances 0.000 description 13
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
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- 239000000203 mixture Substances 0.000 description 12
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- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 8
- 239000006174 pH buffer Substances 0.000 description 8
- 229910052725 zinc Inorganic materials 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N thiocyanic acid Chemical compound SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 6
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 6
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 6
- 239000004327 boric acid Substances 0.000 description 6
- 150000001844 chromium Chemical class 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
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- 150000002500 ions Chemical class 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 150000001735 carboxylic acids Chemical class 0.000 description 5
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical compound [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 235000011054 acetic acid Nutrition 0.000 description 4
- 235000019270 ammonium chloride Nutrition 0.000 description 4
- 238000005238 degreasing Methods 0.000 description 4
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 4
- 229910001453 nickel ion Inorganic materials 0.000 description 4
- 229920002647 polyamide Polymers 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910001297 Zn alloy Inorganic materials 0.000 description 3
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 3
- KXDHJXZQYSOELW-UHFFFAOYSA-N carbonic acid monoamide Natural products NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 3
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 3
- DSHWASKZZBZKOE-UHFFFAOYSA-K chromium(3+);hydroxide;sulfate Chemical group [OH-].[Cr+3].[O-]S([O-])(=O)=O DSHWASKZZBZKOE-UHFFFAOYSA-K 0.000 description 3
- 229910000356 chromium(III) sulfate Inorganic materials 0.000 description 3
- 239000011696 chromium(III) sulphate Substances 0.000 description 3
- 235000015217 chromium(III) sulphate Nutrition 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
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- 235000006408 oxalic acid Nutrition 0.000 description 3
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- 239000011574 phosphorus Substances 0.000 description 3
- 239000001103 potassium chloride Substances 0.000 description 3
- 235000011164 potassium chloride Nutrition 0.000 description 3
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- KJAMZCVTJDTESW-UHFFFAOYSA-N tiracizine Chemical compound C1CC2=CC=CC=C2N(C(=O)CN(C)C)C2=CC(NC(=O)OCC)=CC=C21 KJAMZCVTJDTESW-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- SWMDCXYSYSMCJM-UHFFFAOYSA-N 2-aminopentanethioic s-acid Chemical compound CCCC(N)C(S)=O SWMDCXYSYSMCJM-UHFFFAOYSA-N 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- 229910000510 noble metal Inorganic materials 0.000 description 2
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- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 2
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- 125000001424 substituent group Chemical group 0.000 description 2
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- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- VGTPCRGMBIAPIM-UHFFFAOYSA-M sodium thiocyanate Chemical compound [Na+].[S-]C#N VGTPCRGMBIAPIM-UHFFFAOYSA-M 0.000 description 1
- UMEWSJNRBXKWKZ-UHFFFAOYSA-M sodium;1,4-dioxo-1,4-dipentoxybutane-2-sulfonate Chemical compound [Na+].CCCCCOC(=O)CC(S([O-])(=O)=O)C(=O)OCCCCC UMEWSJNRBXKWKZ-UHFFFAOYSA-M 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- ULSZVNJBVJWEJE-UHFFFAOYSA-N thiazolidine-2-carboxylic acid Chemical compound OC(=O)C1NCCS1 ULSZVNJBVJWEJE-UHFFFAOYSA-N 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
- BSVBQGMMJUBVOD-UHFFFAOYSA-N trisodium borate Chemical group [Na+].[Na+].[Na+].[O-]B([O-])[O-] BSVBQGMMJUBVOD-UHFFFAOYSA-N 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/04—Electroplating: Baths therefor from solutions of chromium
- C25D3/06—Electroplating: Baths therefor from solutions of chromium from solutions of trivalent chromium
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D15/00—Electrolytic or electrophoretic production of coatings containing embedded materials, e.g. particles, whiskers, wires
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/04—Electroplating: Baths therefor from solutions of chromium
- C25D3/08—Deposition of black chromium, e.g. hexavalent chromium, CrVI
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
本發明係關於一種將暗鉻層電沉積於基板上之方法,一種用於沉積此暗鉻層之各別電鍍浴,及一種包含該暗鉻層之各別基板。電鍍浴包含含有化學元素鋁之膠態粒子。包含該暗鉻層之基板主要適合於裝飾目的。The present invention relates to a method of electrodepositing a dark chromium layer on a substrate, a respective electroplating bath for depositing the dark chromium layer, and a respective substrate comprising the dark chromium layer. The electroplating bath contains colloidal particles containing the chemical element aluminum. Substrates comprising the dark chromium layer are mainly suitable for decorative purposes.
自鉻塗層之最開始,暗鉻塗層可歸因於其對裝飾應用之極大吸引而觀察到對其的高度關注。Since the earliest days of chrome coatings, dark chrome coatings have observed a high level of interest due to their great appeal for decorative applications.
即使開始於暗六價鉻塗層,但歸因於較高環境接受性,現今焦點明顯偏移至三價鉻塗層。由於一些年來,例如對於裝飾性汽車部零件而言,對暗三價鉻塗層之需求逐漸增加。然而,在一些情況下,極暗色調可經視為過冷,使得通常需要略微色調修改以產生多種暗調,用於各種裝飾目的。典型地,暗調之程度視沉積參數以及浴成分而明顯地變化。Even though it started with dark hexavalent chromium coatings, today the focus has shifted significantly to trivalent chromium coatings due to higher environmental acceptance. For some years, the demand for dark trivalent chrome coatings has been increasing, for example for decorative automotive parts. However, in some cases very dark shades can be considered too cool such that slight tint modifications are often required to create multiple shades for various decorative purposes. Typically, the degree of darkening varies significantly depending on deposition parameters and bath composition.
存在對於提供暗鉻層的持續需求,其允許對略微更暖色調或略微更暗色調之微調。需要具有允許以容易處理方式進行此微調的調節方式。There is a continuing need to provide a dark chrome layer that allows fine tuning of slightly warmer or slightly darker tones. It is desirable to have a means of adjustment that allows this fine-tuning to be done in an easily handled manner.
原則上,已知暗三價鉻層。In principle, dark trivalent chromium layers are known.
US 2011/155286 A1係指用於化學轉化處理之組合物,其包含三價鉻離子及視情況選用之無機矽溶膠或氧化鋁溶膠。US 2011/155286 A1 refers to a composition for chemical conversion treatment, which includes trivalent chromium ions and optional inorganic silica sol or alumina sol.
JP 5890394 B2係指含有三價鉻及陶瓷粒子之鍍鉻溶液。JP 5890394 B2 refers to a chromium plating solution containing trivalent chromium and ceramic particles.
RU 2231581 C1係指含有三價鉻離子及Al 2O 3粉末之鉻電解質。 RU 2231581 C1 refers to a chromium electrolyte containing trivalent chromium ions and Al 2 O 3 powder.
US 2012/312694 A1係指包含三價鉻離子及膠態二氧化矽之水性酸性三價鉻電解質。US 2012/312694 A1 refers to an aqueous acidic trivalent chromium electrolyte containing trivalent chromium ions and colloidal silicon dioxide.
US 2015/354085 A1係指用於維持三價鍍鉻浴效率之設備,設備利用紫外光(UV)輻射源,其將UV輻射提供至水性電鍍浴,使得抑制浴之鍍覆效率降低。US 2015/354085 A1 refers to an apparatus for maintaining the efficiency of a trivalent chromium plating bath utilizing an ultraviolet (UV) radiation source which provides UV radiation to an aqueous electroplating bath such that the plating efficiency of the inhibiting bath is reduced.
US 2007/0227895 A1係指用於將結晶樣鉻沉積物電沉積於基板上之製程。 本發明之目的 US 2007/0227895 A1 refers to a process for the electrodeposition of crystalline-like chromium deposits on substrates. Purpose of the invention
本發明之目標為提供電沉積暗鉻層之方法,其開始於基礎暗度,但除此以外,提供(I)進一步減小之暗度及(II)同時電鍍浴中之可撓性之高量測,以藉由根據所需規格來降低或增加亮度L* (根據L*a*b*色彩空間系統)而使進一步減小之暗度略微地變化至特定目標暗度。此外,此可撓性較佳地允許在不丟棄電鍍浴之情況下返回至基礎暗度。It is an object of the present invention to provide a method for the electrodeposition of dark chromium layers which starts from a basic darkness but which, in addition, provides (I) a further reduced darkness and (II) a simultaneous high flexibility in the electroplating bath Measured to slightly vary the further reduced darkness to a specific target darkness by reducing or increasing the lightness L* according to the desired specification (according to the L*a*b* color space system). Furthermore, this flexibility preferably allows returning to the base shade without discarding the plating bath.
此等目標係藉由將暗鉻層電沉積於基板上之方法解決,該方法包含以下步驟 (a) 提供基板,其中基板包含塑膠基板, (b) 提供水性三價鉻電鍍浴,其包含 (i) 三價鉻離子, (ii) 用於該等三價鉻離子之一種或大於一種錯合劑, (iii) 含有化學元素鋁之膠態粒子, (iv) 具有氧化數為+5或更低之硫原子的第一含硫化合物,及 (v) 視情況,不同於(iv)之具有氧化數為+5或更低之硫原子的第二含硫化合物, (c) 使基板與該電鍍浴接觸且施加電流,使得暗鉻層電解沉積於基板上。 These objects are solved by a method of electrodepositing a dark chromium layer on a substrate, the method comprising the following steps (a) provide a substrate, wherein the substrate comprises a plastic substrate, (b) Provide an aqueous trivalent chromium plating bath comprising (i) trivalent chromium ions, (ii) for one or more complexing agents for such trivalent chromium ions, (iii) colloidal particles containing the chemical element aluminum, (iv) a first sulfur-containing compound having a sulfur atom with an oxidation number of +5 or less, and (v) Optionally, a second sulfur-containing compound different from (iv) having a sulfur atom with an oxidation number of +5 or less, (c) The substrate is brought into contact with the electroplating bath and an electric current is applied so that a layer of dark chromium is electrolytically deposited on the substrate.
自身實驗已展示(參見文本下方中之實例),相較於不包含該等膠態粒子之各別電鍍浴,藉助於含有化學元素鋁之膠態粒子,獲得進一步減小之暗度,該暗度主要由進一步減小之L*值表示。若水性三價鉻電鍍浴包含該第一含硫化合物,最佳地甲硫胺酸,則情況尤其如此。然而,自身實驗亦顯示此效應不一定在不包含鋁之膠態粒子(例如,膠態二氧化矽)之情況下發生。Own experiments have shown (see examples below the text) that by means of colloidal particles containing the chemical element aluminum a further reduced darkness is obtained compared to a respective electroplating bath not containing these colloidal particles. The degree is mainly indicated by the further reduced L* value. This is especially the case if the aqueous trivalent chromium electroplating bath contains the first sulfur-containing compound, optimally methionine. However, own experiments have also shown that this effect does not necessarily occur in the case of colloidal particles (eg colloidal silicon dioxide) that do not contain aluminum.
本發明方法之另一較大益處在於水性三價鉻電鍍浴包含(iii)與(iv)之組合。最佳地,兩者在本發明之上下文中充當暗化劑。然而,其均在其性質方面顯著變化。其中(iii)由粒子形成,(IV)較佳地為可溶性化合物。此意謂(iii)可藉由添加此類膠態粒子或藉由自電鍍浴部分(或完全)移出膠態粒子而調適(iii)之濃度。最佳地,此類移出藉由物理/機械分離方式,例如過濾實現。此通常允許視所存在量而定來對亮度L*進行微調。此移出通常不顯著影響(iv)之存在。換言之,(iii)之總濃度較佳地藉由物理方式可逆地調適而不影響(iv)之總濃度。此允許理想地利用同一基礎電鍍浴之極多種暗色調。Another great benefit of the method of the present invention is that the aqueous trivalent chromium electroplating bath comprises a combination of (iii) and (iv). Optimally, both act as darkening agents in the context of the present invention. However, they all vary significantly in their properties. Where (iii) is formed by particles, (IV) is preferably a soluble compound. This means that the concentration of (iii) can be adjusted by adding such colloidal particles or by partially (or completely) removing the colloidal particles from the plating bath. Optimally, such removal is achieved by physical/mechanical separation means, such as filtration. This generally allows fine tuning of the brightness L* depending on the amount present. This removal usually does not significantly affect the presence of (iv). In other words, the overall concentration of (iii) is preferably reversibly adjusted by physical means without affecting the overall concentration of (iv). This allows ideal utilization of a wide variety of shades of the same base plating bath.
極佳地,暗鉻層為裝飾鉻層。典型應用為汽車零件,最佳為汽車內部。本發明之方法中所用之電鍍浴極適合於獲得此類暗鉻層,最佳地如在本文全篇中所定義之此類暗鉻層。Advantageously, the dark chrome layer is a decorative chrome layer. Typical applications are automotive parts, optimally automotive interiors. The electroplating bath used in the method of the invention is very suitable for obtaining such a dark chrome layer, optimally as defined throughout the text.
在本發明之上下文中,暗鉻層由L*a*b*色彩系統定義,若未另外說明,則較佳地如1976年國際照明委員會(Commission Internationale de I'Eclairage)所介紹。In the context of the present invention, the dark chrome layer is defined by the L*a*b* color system, preferably as introduced by the 1976 International Commission on Illumination (Commission Internationale de I'Eclairage), if not stated otherwise.
在本發明之方法之步驟(a)中,提供基板。In step (a) of the method of the invention, a substrate is provided.
在本發明之方法中,基板包含塑膠基板。In the method of the present invention, the substrate includes a plastic substrate.
本發明之方法為較佳的,其中塑膠基板包含丙烯腈丁二烯苯乙烯(ABS)、丙烯腈丁二烯苯乙烯-聚碳酸酯(ABS-PC)、聚丙烯(PP)、聚醯胺(PA)、聚胺酯(PU)、聚環氧化物(PE)、聚丙烯酸酯、聚醚醯亞胺(PEI)、聚醚酮(PEK)、其混合物及/或其複合物;較佳地丙烯腈丁二烯苯乙烯(ABS)、丙烯腈丁二烯苯乙烯-聚碳酸酯(ABS-PC)、聚醯胺(PA)、聚胺酯(PU)、聚環氧化物(PE)、聚丙烯酸酯、其混合物及/或其複合物。此類塑膠基板通常用於中裝飾應用,諸如汽車零件,特定言之ABS及ABS-PC。The method of the present invention is preferred, wherein the plastic substrate comprises acrylonitrile butadiene styrene (ABS), acrylonitrile butadiene styrene-polycarbonate (ABS-PC), polypropylene (PP), polyamide (PA), polyurethane (PU), polyepoxide (PE), polyacrylate, polyetherimide (PEI), polyetherketone (PEK), mixtures thereof and/or composites thereof; preferably propylene Nitrile butadiene styrene (ABS), acrylonitrile butadiene styrene-polycarbonate (ABS-PC), polyamide (PA), polyurethane (PU), polyepoxide (PE), polyacrylate , mixtures thereof and/or complexes thereof. Such plastic substrates are commonly used in mid-decoration applications, such as automotive parts, specifically ABS and ABS-PC.
本發明之方法為較佳的,其中塑膠基板包含至少一個金屬層(另外最佳地)。較佳地,至少一個金屬層包含銅或銅合金層及/或鎳或鎳合金層。The method of the present invention is preferred, wherein the plastic substrate comprises at least one metal layer (also most preferably). Preferably, at least one metal layer comprises a layer of copper or copper alloy and/or a layer of nickel or nickel alloy.
在一些其他情況下,不根據本發明,基板為金屬基板,較佳地包含鐵、銅、鎳、鋁、鋅、其混合物及/或其合金。包含鐵之極佳金屬基板為鋼。其混合物較佳地包括複合物。In some other cases, not in accordance with the present invention, the substrate is a metal substrate, preferably comprising iron, copper, nickel, aluminum, zinc, mixtures thereof and/or alloys thereof. An excellent metal substrate comprising iron is steel. Mixtures thereof preferably include complexes.
本發明之方法為較佳的,其中在步驟(a)之後且在步驟(c)之前,本發明之方法包括以下步驟 (a1) 預處理基板,較佳地清潔基板,最佳地除油及/或浸洗基板。 The method of the present invention is preferred, wherein after step (a) and before step (c), the method of the present invention comprises the following steps (a1) Pretreatment of substrates, optimal cleaning of substrates, optimal degreasing and/or rinsing of substrates.
較佳地,除油包含電解除油。Preferably, degreasing comprises electrolytic degreasing.
較佳地,浸洗包含與酸,較佳地無機酸接觸。Preferably, rinsing comprises contact with an acid, preferably a mineral acid.
步驟(a1)之後較佳為水沖洗。Water rinsing is preferred after step (a1).
在本發明之方法之步驟(b)中,提供該水性三價鉻電鍍浴。In step (b) of the method of the present invention, the aqueous trivalent chromium electroplating bath is provided.
該電鍍浴包含水,以電鍍浴之總體積計,較佳地至少55 vol.-%或更多,更佳地65 vol.-%或更多,甚至更佳地75 vol.-%或更多,又甚至更佳地85 vol.-%或更多,再更佳地90 vol.-%或更多,最佳地95 vol.-%或更多為水。最佳地,水為唯一溶劑。The electroplating bath contains water, preferably at least 55 vol.-% or more, more preferably 65 vol.-% or more, even more preferably 75 vol.-% or more, based on the total volume of the electroplating bath More, and even better 85 vol.-% or more, more preferably 90 vol.-% or more, most preferably 95 vol.-% or more is water. Optimally, water is the sole solvent.
本發明之方法為較佳的,其中水性三價鉻電鍍浴為酸性的,較佳地具有在1.5至5.0,更佳地2.1至4.6,甚至更佳地2.4至4.2,又更佳地2.7至3.8,最佳地3.0至3.5的範圍內的pH。pH較佳地藉由鹽酸、硫酸、氨、氫氧化鉀及/或氫氧化鈉進行調節。The method of the present invention is preferred, wherein the water-based trivalent chromium electroplating bath is acidic, preferably having an acidity of 1.5 to 5.0, more preferably 2.1 to 4.6, even more preferably 2.4 to 4.2, and more preferably 2.7 to 4.0 3.8, optimally a pH in the range of 3.0 to 3.5. The pH is preferably adjusted by hydrochloric acid, sulfuric acid, ammonia, potassium hydroxide and/or sodium hydroxide.
水性三價鉻電鍍浴包含(i)三價鉻離子。The aqueous trivalent chromium electroplating bath comprises (i) trivalent chromium ions.
本發明之方法為較佳的,其中在該電鍍浴中,以電鍍浴之總體積計,三價鉻離子具有在5 g/L至35 g/L,較佳地6 g/L至32 g/L,更佳地7 g/L至29 g/L,甚至更佳地8 g/L至26 g/L,又甚至更佳地9 g/L至23 g/L,最佳地10 g/L至22 g/L的範圍內之總濃度。The method of the present invention is preferred, wherein in the electroplating bath, based on the total volume of the electroplating bath, trivalent chromium ions have a concentration of 5 g/L to 35 g/L, preferably 6 g/L to 32 g /L, more preferably 7 g/L to 29 g/L, even better 8 g/L to 26 g/L, even better 9 g/L to 23 g/L, most preferably 10 g /L to 22 g/L total concentration in the range.
較佳地,三價鉻離子來自三價鉻鹽,較佳地來自無機鉻鹽及/或有機鉻鹽,最佳地來自無機鉻鹽。較佳的無機鉻鹽包含氯化物及/或硫酸根陰離子,較佳地硫酸根陰離子。極佳的無機鉻鹽為鹼性硫酸鉻。較佳的有機鉻鹽包含羧酸陰離子,較佳地甲酸根、乙酸根、蘋果酸根及/或草酸根陰離子。Preferably, the trivalent chromium ions come from trivalent chromium salts, preferably from inorganic chromium salts and/or organic chromium salts, most preferably from inorganic chromium salts. Preferred inorganic chromium salts comprise chloride and/or sulfate anion, preferably sulfate anion. An excellent inorganic chromium salt is basic chromium sulfate. Preferred organochromium salts comprise carboxylic acid anions, preferably formate, acetate, malate and/or oxalate anions.
本發明之方法為較佳的,其中在水性三價鉻電鍍浴中,以水性三價鉻電鍍浴之總體積計,三價鉻離子連同視情況選用之鐵離子(關於鐵離子,在一些情況下,鐵離子為視情況選用之但為較佳的,參見下方文本)表示水性三價鉻電鍍浴中之80 mol-%或更多,較佳地90 mol-%或更多,更佳地93 mol-%或更多,甚至更佳地96 mol-%或更多,最佳地98 mol-%或更多的所有過渡金屬離子。The method of the present invention is preferred, wherein in the aqueous trivalent chromium electroplating bath, based on the total volume of the aqueous trivalent chromium electroplating bath, trivalent chromium ions are selected together with iron ions as the case may be (about iron ions, in some cases Here, iron ions are optional but preferred, see text below) means 80 mol-% or more in the aqueous trivalent chromium electroplating bath, preferably 90 mol-% or more, more preferably 93 mol-% or more, even better 96 mol-% or more, most preferably 98 mol-% or more of all transition metal ions.
水性三價鉻電鍍浴包含(ii)用於該等三價鉻離子之一種或大於一種錯合劑。The aqueous trivalent chromium electroplating bath comprises (ii) one or more complexing agents for the trivalent chromium ions.
此類化合物使三價鉻離子保持呈溶液形式。較佳地,一種或大於一種錯合劑不為(iv)之化合物,且(v)因此較佳地不同於(iv)化合物。These compounds keep the trivalent chromium ions in solution. Preferably, the one or more complexing agents are not compounds of (iv), and (v) is thus preferably different from the compound of (iv).
本發明之方法為較佳的,其中在水性三價鉻電鍍浴中,一種或大於一種錯合劑包含有機酸及/或其鹽,較佳地有機羧酸及/或其鹽,最佳地包含一個、二個或三個羧基之有機羧酸及/或其鹽。The method of the present invention is preferred, wherein in the aqueous trivalent chromium electroplating bath, one or more complexing agents comprise organic acids and/or salts thereof, preferably organic carboxylic acids and/or salts thereof, most preferably comprise One, two or three carboxyl organic carboxylic acids and/or their salts.
有機羧酸及/或其鹽(較佳地,亦為包含一個、兩個或三個羧基之有機羧酸及/或其鹽)較佳地經取代基取代或未經取代。較佳取代基包含胺基及/或羥基。較佳地,取代基不包含SH部分及/或SCN部分。更佳地,用於該等三價鉻離子之一種或大於一種錯合劑不為具有氧化數為+5或更低之硫原子的含硫化合物。Organic carboxylic acids and/or salts thereof (preferably also organic carboxylic acids and/or salts thereof comprising one, two or three carboxyl groups) are preferably substituted or unsubstituted. Preferred substituents include amino and/or hydroxyl. Preferably, the substituents do not contain SH moieties and/or SCN moieties. More preferably, one or more complexing agents for the trivalent chromium ions are not sulfur-containing compounds having sulfur atoms with an oxidation number of +5 or less.
更佳地,有機羧酸及/或其鹽(較佳地,亦為包含一個、兩個或三個羧基之有機羧酸及/或其鹽)包含胺基甲酸(較佳地α-胺基甲酸)、羥基甲酸及/或其鹽。較佳(α-)胺基甲酸包含甘胺酸、天冬胺酸及/或其鹽。較佳地,胺基甲酸(較佳地分別為α-胺基甲酸)不為根據(iv)之化合物,更佳地不為含硫胺基甲酸(較佳地分別不為含硫α-胺基甲酸),最佳地不為甲硫胺酸。尤佳地,一種或大於一種錯合劑不同於(iv)及(v)。More preferably, the organic carboxylic acid and/or its salt (preferably also an organic carboxylic acid and/or its salt comprising one, two or three carboxyl groups) comprises a carbamic acid (preferably an α-amino formic acid), hydroxyformic acid and/or its salts. Preferred (α-) carbamic acids include glycine, aspartic acid and/or salts thereof. Preferably, the carbamic acid (preferably respectively α-carbamic acid) is not a compound according to (iv), more preferably not a sulfur-containing carbamic acid (preferably respectively not a sulfur-containing α-amine methionine), most preferably not methionine. Especially preferably, one or more complexing agents are different from (iv) and (v).
本發明之方法為更佳的,其中一種或大於一種錯合劑包含甲酸、乙酸、草酸、酒石酸、蘋果酸、檸檬酸、甘胺酸、天冬胺酸及/或其鹽,較佳地甲酸、乙酸、草酸、酒石酸、蘋果酸、檸檬酸及/或其鹽,更佳地甲酸、乙酸、草酸、酒石酸、蘋果酸及/或其鹽,甚至更佳地甲酸、乙酸及/或其鹽,最佳地甲酸及/或其鹽。The method of the present invention is better, wherein one or more than one complexing agent comprises formic acid, acetic acid, oxalic acid, tartaric acid, malic acid, citric acid, glycine, aspartic acid and/or its salt, preferably formic acid, Acetic acid, oxalic acid, tartaric acid, malic acid, citric acid and/or their salts, more preferably formic acid, acetic acid, oxalic acid, tartaric acid, malic acid and/or their salts, even more preferably formic acid, acetic acid and/or their salts, most preferably Jiadi formic acid and/or its salt.
本發明之方法為較佳的,其中以水性三價鉻電鍍浴之總體積計,一種或大於一種錯合劑具有在5 g/L至200 g/L的範圍內,較佳地在8 g/L至150 g/L的範圍內,更佳地在10 g/L至100 g/L的範圍內,甚至更佳地在12 g/L至75 g/L的範圍內,又甚至更佳地在15 g/L至50 g/L的範圍內,最佳地在20 g/L至35 g/L的範圍內之總濃度。The method of the present invention is preferred, wherein based on the total volume of the aqueous trivalent chromium electroplating bath, one or more than one complexing agent has a range of 5 g/L to 200 g/L, preferably 8 g/L In the range of L to 150 g/L, more preferably in the range of 10 g/L to 100 g/L, even better in the range of 12 g/L to 75 g/L, and even better Total concentration in the range of 15 g/L to 50 g/L, optimally in the range of 20 g/L to 35 g/L.
水性三價鉻電鍍浴包含(iii)含有化學元素鋁之膠態粒子。The aqueous trivalent chromium electroplating bath comprises (iii) colloidal particles containing the chemical element aluminum.
本發明之方法為較佳的,其中水性三價鉻電鍍浴為膠態懸浮液,較佳地溶膠。此係歸因於該等膠態粒子之存在,該等膠態粒子較佳地對應地較小。The method of the present invention is preferred, wherein the aqueous trivalent chromium electroplating bath is a colloidal suspension, preferably a sol. This is due to the presence of the colloidal particles, which are preferably correspondingly smaller.
本發明之方法為較佳的,其中該等膠態粒子包含奈米粒子,較佳地為奈米粒子。較佳地,含有化學元素鋁之膠態粒子的粒徑小於1000 nm、較佳地小於500 nm,更佳地至少90%膠態粒子的粒徑小於500 nm,最佳地至少90%膠態粒子的粒徑小於150 nm。The method of the present invention is preferred, wherein the colloidal particles comprise nanoparticles, preferably nanoparticles. Preferably, the colloidal particles containing the chemical element aluminum have a particle size of less than 1000 nm, preferably less than 500 nm, more preferably at least 90% of the colloidal particles have a particle size of less than 500 nm, most preferably at least 90% of the colloidal particles The particle size of the particles is less than 150 nm.
本發明之方法為較佳的,其中以體積計,該等膠態粒子之平均粒子直徑D 50為100 nm或更小,較佳地80 nm或更小,更佳地60 nm或更小,甚至更佳地50 nm或更小,最佳地40 nm或更小,極佳地30 nm或更小,甚至最佳地25 nm或更小。 The method of the present invention is preferred, wherein by volume, the average particle diameter D of these colloidal particles is 100 nm or less, preferably 80 nm or less, more preferably 60 nm or less, Even more preferably 50 nm or less, most preferably 40 nm or less, excellently 30 nm or less, even most preferably 25 nm or less.
本發明之方法為更佳的,其中該等膠態粒子至少包含粒徑為100 nm或更小、較佳地80 nm或更小、更佳地60 nm或更小、甚至更佳地50 nm或更小、最佳地40 nm或更小、極佳地30 nm或更小、甚至最佳地20 nm或更小之粒子。The method of the present invention is even better, wherein the colloidal particles at least include particles with a diameter of 100 nm or less, preferably 80 nm or less, more preferably 60 nm or less, even more preferably 50 nm Or smaller, preferably 40 nm or smaller, extremely preferably 30 nm or smaller, even most preferably 20 nm or smaller particles.
本發明之方法為較佳的,其中以水性三價鉻電鍍浴之總體積計,該等膠態粒子以在0.05 g/L至15 g/L、較佳地0.1 g/L至12 g/L、更佳地0.5 g/L至10 g/L、甚至更佳地1.0 g/L至8 g/L、最佳地1.5 g/L至6 g/L,甚至最佳地1.9 g/L至4 g/L的範圍內之總量存在。The method of the present invention is preferred, wherein based on the total volume of the aqueous trivalent chromium electroplating bath, the colloidal particles are in the range of 0.05 g/L to 15 g/L, preferably 0.1 g/L to 12 g/L L, more preferably 0.5 g/L to 10 g/L, even more preferably 1.0 g/L to 8 g/L, optimally 1.5 g/L to 6 g/L, even optimally 1.9 g/L present in total amounts ranging from 4 g/L to 4 g/L.
本發明之方法為更佳的,其中該等膠態粒子包含氧化鋁。The method of the present invention is more preferably, wherein the colloidal particles comprise alumina.
本發明之方法為最佳的,其中該等膠態粒子包含Al 2O 3,較佳地基本上由Al 2O 3組成。最佳地,此等為水性三價鉻電鍍浴中之唯一膠態粒子。 The method of the present invention is most preferably wherein the colloidal particles comprise Al2O3 , preferably consist essentially of Al2O3 . Optimally, these are the only colloidal particles in the aqueous trivalent chromium plating bath.
水性三價鉻電鍍浴包含(iv)具有氧化數為+5或更低之硫原子的第一含硫化合物。較佳地,包括其酸、鹽、異構體及甜菜鹼。然而,在(iv)及(v)中不計數硫酸根陰離子。The aqueous trivalent chromium electroplating bath comprises (iv) a first sulfur-containing compound having a sulfur atom with an oxidation number of +5 or lower. Preferably, its acids, salts, isomers and betaines are included. However, sulfate anions are not counted in (iv) and (v).
視情況,水性三價鉻電鍍浴包含不同於(iv)之(v)具有氧化數為+5或更低之硫原子的第二含硫化合物。同樣,此較佳地包括其酸、鹽、異構體及甜菜鹼。Optionally, the aqueous trivalent chromium electroplating bath comprises (v) a second sulfur-containing compound having a sulfur atom having an oxidation number of +5 or less other than (iv). Also, this preferably includes its acids, salts, isomers and betaines.
在一些情況下,本發明之方法為較佳的,其中水性三價鉻電鍍浴包含(iv)及(v)。因此,在此情況下,(v)不為視情況選用之。In some cases, the method of the present invention is preferred, wherein the aqueous trivalent chromium electroplating bath comprises (iv) and (v). Therefore, (v) is not optional in this case.
本發明之方法為通常較佳的,其中具有氧化數為+5或更低之硫原子的第一及視情況選用之第二含硫化合物包含二價硫原子。該等化合物較佳地為無機或有機的。The process of the present invention is generally preferred wherein the first and optionally second sulfur-containing compounds having sulfur atoms having an oxidation number of +5 or less comprise divalent sulfur atoms. These compounds are preferably inorganic or organic.
在一些情況下,較佳地,第一含硫化合物包含一種或大於一種有機含硫化合物(較佳地如貫穿文本所描述),其中較佳地,第二含硫化合物包含一種或大於一種無機含硫化合物(較佳地如貫穿文本所描述)。In some cases, preferably, the first sulfur-containing compound comprises one or more than one organic sulfur-containing compound (preferably as described throughout the text), wherein preferably, the second sulfur-containing compound comprises one or more than one inorganic Sulfur-containing compounds (preferably as described throughout the text).
本發明之方法為更通常較佳的,其中具有氧化數為+5或更低之硫原子的第一及視情況選用之第二含硫化合物選自由以下組成之群(包括其鹽): (1) 2-(2-羥基-乙基硫基)-乙醇, (2) 噻唑啶-2-甲酸, (3) 硫代二甘醇乙氧化物 (4) 2-胺基-3-乙基硫基-丙酸, (5) 3-(3-羥基-丙基硫基)-丙-1-醇 (6) 2-胺基-3-羧基甲基硫基-丙酸, (7) 2-胺基-4-甲基硫基-丁-1-醇, (8) 2-胺基-4-甲基硫基-丁酸, (9) 2-胺基-4-乙基硫基-丁酸, (10) 3-甲脒基硫基-丙烷-1-磺酸, (11) 3-甲脒基硫基-丙酸, (12) 硫代𠰌啉, (13) 2-[2-(2-羥基-乙基硫基)-乙基硫基]-乙醇, (14) 4,5-二氫-噻唑-2-基胺, (15) 硫氰酸, (16) 2-胺基-4-甲亞磺醯基-丁酸, (17) 1,1-二側氧基-1,2-二氫-1λ*6*-苯并[d]異噻唑-3-酮 (18) 丙-2-炔-1-磺酸, (19) 甲亞磺醯基甲烷,及 (20) 2-(1,1,3-三側氧基-1,3-二氫-1λ*6*-苯并[d]異噻唑-2-基)-乙磺酸 The process of the present invention is more generally preferred wherein the first and optionally second sulfur-containing compounds having a sulfur atom having an oxidation number of +5 or less are selected from the group consisting of (including salts thereof): (1) 2-(2-Hydroxy-ethylthio)-ethanol, (2) Thiazolidine-2-carboxylic acid, (3) Thiodiethylene glycol ethoxylate (4) 2-Amino-3-ethylthio-propionic acid, (5) 3-(3-Hydroxy-propylthio)-propan-1-ol (6) 2-Amino-3-carboxymethylthio-propionic acid, (7) 2-Amino-4-methylthio-butan-1-ol, (8) 2-Amino-4-methylthio-butyric acid, (9) 2-Amino-4-ethylthio-butyric acid, (10) 3-Formamidinothio-propane-1-sulfonic acid, (11) 3-Formamidinothio-propionic acid, (12) Thiothioline, (13) 2-[2-(2-Hydroxy-ethylthio)-ethylthio]-ethanol, (14) 4,5-dihydro-thiazol-2-ylamine, (15) Thiocyanic acid, (16) 2-Amino-4-methylsulfinyl-butyric acid, (17) 1,1-Dioxo-1,2-dihydro-1λ*6*-benzo[d]isothiazol-3-one (18) prop-2-yne-1-sulfonic acid, (19) Methanesulfinyl methane, and (20) 2-(1,1,3-trioxo-1,3-dihydro-1λ*6*-benzo[d]isothiazol-2-yl)-ethanesulfonic acid
本發明之方法亦為通常較佳的,其中以電鍍浴之總體積計,(iv)及(v)一起具有在16 mmol/L至1150 mmol/L,較佳地45 mmol/L至1000 mmol/L,更佳地80 mmol/L至900 mmol/L,甚至更佳地120 mmol/L至800 mmol/L,又甚至更佳地150 mmol/L至700 mmol/L,最佳地180 mmol/L至650 mmol/L的範圍內之總濃度。此最佳地應用於水性三價鉻電鍍浴中之具有氧化數為+5或更低之硫原子的所有含硫化合物(亦即,所有此類化合物內之總濃度)。The method of the present invention is also generally preferred, wherein (iv) and (v) together have a range of 16 mmol/L to 1150 mmol/L, preferably 45 mmol/L to 1000 mmol/L, based on the total volume of the electroplating bath. /L, more preferably 80 mmol/L to 900 mmol/L, even better 120 mmol/L to 800 mmol/L, even better 150 mmol/L to 700 mmol/L, most preferably 180 mmol /L to 650 mmol/L total concentration. This applies optimally to all sulfur-containing compounds (ie, the total concentration within all such compounds) in aqueous trivalent chromium plating baths having sulfur atoms with an oxidation number of +5 or less.
本發明之方法為尤佳的,其中以電鍍浴之總體積計,水性三價鉻電鍍浴以在15 mmol/L至750 mmol/L,較佳地40 mmol/L至650 mmol/L,更佳地70 mmol/L至600 mmol/L,甚至更佳地100 mmol/L至550 mmol/L,又甚至更佳地120 mmol/L至500 mmol/L,最佳地140 mmol/L至470 mmol/L的範圍內之總濃度包含(iv)。The method of the present invention is particularly preferred, wherein based on the total volume of the electroplating bath, the aqueous trivalent chromium electroplating bath is 15 mmol/L to 750 mmol/L, preferably 40 mmol/L to 650 mmol/L, more Preferably 70 mmol/L to 600 mmol/L, even better 100 mmol/L to 550 mmol/L, even better 120 mmol/L to 500 mmol/L, most preferably 140 mmol/L to 470 The total concentration in the range of mmol/L comprises (iv).
本發明之方法為尤佳的,其中以電鍍浴之總體積計,水性三價鉻電鍍浴以在1 mmol/L至400 mmol/L,較佳地5 mmol/L至350 mmol/L,更佳地10 mmol/L至300 mmol/L,甚至更佳地20 mmol/L至250 mmol/L,又甚至更佳地30 mmol/L至200 mmol/L,最佳地40 mmol/L至180 mmol/L的範圍內之總濃度包含(v)。The method of the present invention is particularly preferred, wherein based on the total volume of the electroplating bath, the aqueous trivalent chromium electroplating bath is 1 mmol/L to 400 mmol/L, preferably 5 mmol/L to 350 mmol/L, more Preferably 10 mmol/L to 300 mmol/L, even better 20 mmol/L to 250 mmol/L, even better 30 mmol/L to 200 mmol/L, most preferably 40 mmol/L to 180 The total concentration in the range of mmol/L includes (v).
本發明之方法為較佳的,其中(iv)之莫耳濃度高於(v)。在一些情況下,本發明之方法為較佳的,其中在水性三價鉻電鍍浴中,(iv)與(v)之莫耳比大於1,較佳地1.1或更大,最佳地1.2或更大。最佳地,該第一含硫化合物具有最高濃度之具有氧化數為+5或更低之硫原子的含硫化合物。The method of the present invention is preferred, wherein the molar concentration of (iv) is higher than that of (v). In some cases, the method of the present invention is preferred, wherein in the aqueous trivalent chromium electroplating bath, the molar ratio of (iv) to (v) is greater than 1, preferably 1.1 or greater, most preferably 1.2 or larger. Optimally, the first sulfur-containing compound has the highest concentration of sulfur-containing compounds having sulfur atoms with an oxidation number of +5 or less.
在一些情況下,本發明之方法為更佳的,其中在水性三價鉻電鍍浴中,(iv)與(v)之莫耳比在1.05至15,較佳地1.10至12,更佳地1.15至10,甚至更佳地1.20至9,最佳地1.25至8的範圍內。此外,最佳地,該第一含硫化合物具有最高濃度之具有氧化數為+5或更低之硫原子的含硫化合物。In some cases, the method of the present invention is better, wherein in the aqueous trivalent chromium electroplating bath, the molar ratio of (iv) and (v) is in the range of 1.05 to 15, preferably 1.10 to 12, more preferably 1.15 to 10, even better 1.20 to 9, most preferably 1.25 to 8. Furthermore, preferably, the first sulfur-containing compound has the highest concentration of sulfur-containing compounds having sulfur atoms with an oxidation number of +5 or less.
在一些情況下,本發明之方法為較佳的,其中具有氧化數為+5或更低之硫原子的第一含硫化合物包含氮原子,更佳地包含胺基,最佳地包含胺基酸。In some cases, the method of the present invention is preferred, wherein the first sulfur-containing compound having a sulfur atom with an oxidation number of +5 or less comprises a nitrogen atom, more preferably an amine group, most preferably an amine group acid.
較佳地,該胺基酸包含具有氧化數為+5或更低之硫原子的α-胺基酸,最佳地具有氧化數為+5或更低之硫原子的蛋白胺基酸。最佳地,此包含甲硫胺酸及半胱胺酸。Preferably, the amino acid comprises an α-amino acid having a sulfur atom with an oxidation number of +5 or lower, most preferably a protein amino acid having a sulfur atom with an oxidation number of +5 or lower. Optimally, this includes methionine and cysteine.
在一些情況下,本發明之方法為更佳的,其中第一含硫化合物包含甲硫胺酸。若第一含硫化合物包含甲硫胺酸,則前述莫耳比最佳地適用。然而,在其他情況下,本發明之方法為較佳的,其中代替第一含硫化合物,第二含硫化合物包含甲硫胺酸。In some cases, the method of the present invention is more preferred, wherein the first sulfur-containing compound comprises methionine. The aforementioned molar ratios apply optimally if the first sulfur-containing compound comprises methionine. In other cases, however, the method of the invention is preferred, wherein instead of the first sulfur-containing compound, the second sulfur-containing compound comprises methionine.
本發明之方法為較佳的,其中以電鍍浴之總體積計,甲硫胺酸具有在100 mmol/L至500 mmol/L,較佳地110 mmol/L至450 mmol/L,更佳地120 mmol/L至400 mmol/L,甚至更佳地130 mmol/L至350 mmol/L,又甚至更佳地140 mmol/L至300 mmol/L,最佳地150 mmol/L至250 mmol/L的範圍內之總濃度。然而,在一些情況下,較佳為甲硫胺酸甚至具有較低的總濃度,較佳地在15 mmol/L至100 mmol/L,更佳地20 mmol/L至80 mmol/L的範圍內。The method of the present invention is preferred, wherein based on the total volume of the electroplating bath, methionine has a concentration of 100 mmol/L to 500 mmol/L, preferably 110 mmol/L to 450 mmol/L, more preferably 120 mmol/L to 400 mmol/L, even better 130 mmol/L to 350 mmol/L, even better 140 mmol/L to 300 mmol/L, most preferably 150 mmol/L to 250 mmol/L The total concentration in the range of L. However, in some cases it is preferred that methionine has an even lower total concentration, preferably in the range of 15 mmol/L to 100 mmol/L, more preferably 20 mmol/L to 80 mmol/L Inside.
在一些情況下,本發明之方法為較佳的,其中第二含硫化合物包含具有氧化數為+5或更低之硫原子的無機含硫化合物,較佳地包含硫氰酸根陰離子。然而,在一些其他情況下,本發明之方法為較佳的,其中代替第二含硫化合物,第一含硫化合物包含硫氰酸根陰離子。在本發明之上下文中,硫氰酸根陰離子(亦即,SCN -)經視為無機的,其中包含硫氰酸根部分之有機化合物經視為有機硫氰酸根。較佳地,硫氰酸根陰離子經由硫氰酸鹽(例如,硫氰酸鉀、硫氰酸鈉、硫氰酸銨)及/或經由硫氰酸存在。 In some cases, the method of the present invention is preferred, wherein the second sulfur-containing compound comprises an inorganic sulfur-containing compound having a sulfur atom with an oxidation number of +5 or less, preferably comprising a thiocyanate anion. However, in some other cases, the method of the present invention is preferred, wherein instead of the second sulfur-containing compound, the first sulfur-containing compound comprises a thiocyanate anion. In the context of the present invention, the thiocyanate anion (ie, SCN − ) is considered to be inorganic, and the organic compound in which the thiocyanate moiety is contained is considered to be organic thiocyanate. Preferably, the thiocyanate anion is present via thiocyanate (eg potassium thiocyanate, sodium thiocyanate, ammonium thiocyanate) and/or via thiocyanic acid.
本發明之方法為較佳的,其中以電鍍浴之總體積計,硫氰酸根陰離子具有在1 mmol/L至400 mmol/L,較佳地3 mmol/L至350 mmol/L,更佳地5 mmol/L至300 mmol/L,甚至更佳地8 mmol/L至250 mmol/L,又甚至更佳地12 mmol/L至200 mmol/L,最佳地15 mmol/L至180 mmol/L的範圍內之總濃度。The method of the present invention is preferred, wherein based on the total volume of the electroplating bath, the thiocyanate anion has a concentration of 1 mmol/L to 400 mmol/L, preferably 3 mmol/L to 350 mmol/L, more preferably 5 mmol/L to 300 mmol/L, even better 8 mmol/L to 250 mmol/L, even better 12 mmol/L to 200 mmol/L, most preferably 15 mmol/L to 180 mmol/L The total concentration in the range of L.
較佳地,水性三價鉻電鍍浴包含其他化合物或較佳地不含有如下文中所概述之特定化合物。Preferably, the aqueous trivalent chromium electroplating bath contains other compounds or preferably is free of specific compounds as outlined below.
本發明之方法為較佳的,其中以電鍍浴之總體積計,水性三價鉻電鍍浴較佳地以在0.1 mmol/L至10 mmol/L,較佳地0.4 mmol/L至8 mmol/L,更佳地0.8 mmol/L至6 mmol/L,甚至更佳地1.2 mmol/L至5 mmol/L,最佳地1.5 mmol/L至4.5 mmol/L的範圍內之濃度進一步包含Fe(II)離子。在許多情況下,該等Fe(II)離子正向地影響電鍍效能。此外,在一些情況下,較佳為暗鉻層包含鐵。The method of the present invention is preferred, wherein based on the total volume of the electroplating bath, the aqueous trivalent chromium electroplating bath is preferably at 0.1 mmol/L to 10 mmol/L, preferably 0.4 mmol/L to 8 mmol/L L, more preferably 0.8 mmol/L to 6 mmol/L, even more preferably 1.2 mmol/L to 5 mmol/L, preferably 1.5 mmol/L to 4.5 mmol/L, the concentration in the range further comprises Fe( II) Ions. In many cases, the Fe(II) ions positively affect plating performance. Also, in some cases, it is preferable that the dark chrome layer contains iron.
本發明之方法為較佳的,其中在步驟(b)中,以該電鍍浴之總體積計,水性三價鉻電鍍浴以較佳地在0.2 mol/L至1.3 mol/L,更佳地0.3 mol/L至1.1 mol/L,甚至更佳地0.4 mol/L至1.0 mol/L,又甚至更佳地0.5 mol/L至0.9 mol/L,最佳地0.6 mol/L至0.8 mol/L的範圍之濃度進一步包含硫酸根陰離子。較佳地,硫酸根離子歸因於三價鉻離子源,例如鹼性硫酸鉻而存在。磺酸根離子極好地促進該電鍍浴之導電性。The method of the present invention is preferred, wherein in step (b), based on the total volume of the electroplating bath, the aqueous trivalent chromium electroplating bath is preferably at 0.2 mol/L to 1.3 mol/L, more preferably 0.3 mol/L to 1.1 mol/L, even more preferably 0.4 mol/L to 1.0 mol/L, even more preferably 0.5 mol/L to 0.9 mol/L, most preferably 0.6 mol/L to 0.8 mol/L The concentration in the range of L further includes sulfate anion. Preferably, sulfate ions are present due to a source of trivalent chromium ions, such as basic chromium sulfate. Sulfonate ions contribute extremely well to the conductivity of the electroplating bath.
本發明之方法為較佳的,其中在步驟(b)中,水性三價鉻電鍍浴進一步包含鹵素陰離子,以該電鍍浴之總體積計,較佳地在0.1 mol/L至6 mol/L的範圍內之總濃度,更佳地在0.5 mol/L至5 mol/L,甚至更佳地1 mol/L至4.5 mol/L,又甚至更佳地1.5 mol/L至4.2 mol/L,最佳地2 mol/L至3.9 mol/L的範圍內之總濃度的鹵素陰離子。The method of the present invention is preferred, wherein in step (b), the aqueous trivalent chromium electroplating bath further comprises a halogen anion, based on the total volume of the electroplating bath, preferably in the range of 0.1 mol/L to 6 mol/L The total concentration within the range, more preferably 0.5 mol/L to 5 mol/L, even more preferably 1 mol/L to 4.5 mol/L, even more preferably 1.5 mol/L to 4.2 mol/L, Optimally the total concentration of halide anions in the range of 2 mol/L to 3.9 mol/L.
本發明之方法為更佳的,其中以該電鍍浴之總體積計,鹵素陰離子以在較佳地0.5 mol/L至5 mol/L,更佳地0.8 mol/L至4.7 mol/L,甚至更佳地1.3 mol/L至4.5 mol/L,又甚至更佳地1.8 mol/L至4 mol/L,最佳地2.3 mol/L至3.7 mol/L的範圍之總濃度包含氯陰離子。氯離子較佳地來自氯化鹽及/或鹽酸,較佳地來自氯化鈉、氯化鉀、氯化銨、氯化鉻(至少作為所有氯離子之一部分)及/或其混合物。通常,氯離子以導電性鹽之陰離子形式存在。極佳導電性鹽為氯化銨、氯化鈉及氯化鉀,氯化銨為最佳的。The method of the present invention is more preferred, wherein based on the total volume of the electroplating bath, the halogen anion is preferably 0.5 mol/L to 5 mol/L, more preferably 0.8 mol/L to 4.7 mol/L, or even More preferably a total concentration in the range of 1.3 mol/L to 4.5 mol/L, even more preferably 1.8 mol/L to 4 mol/L, most preferably 2.3 mol/L to 3.7 mol/L comprises chloride anions. Chloride ions are preferably derived from chloride salts and/or hydrochloric acid, preferably from sodium chloride, potassium chloride, ammonium chloride, chromium chloride (at least as part of all chloride ions) and/or mixtures thereof. Typically, chloride ions exist as anions of conductive salts. Excellent conductivity salts are ammonium chloride, sodium chloride and potassium chloride, with ammonium chloride being the most preferred.
本發明之方法為較佳的,其中在步驟(b)中,在一些情況下,較佳地除氯陰離子以外,鹵素陰離子包含溴陰離子。溴離子通常避免非所需六價鉻物種之陽極形成。較佳地,以水性三價鉻電鍍浴之總體積計,溴離子具有在3 g/L至20 g/L的範圍內,較佳地在4 g/L至18 g/L的範圍內,更佳地在5 g/L至16 g/L的範圍內,甚至更佳地在6 g/L至14 g/L的範圍內,最佳地在7 g/L至12 g/L的範圍內之濃度。溴離子較佳地來自溴化物鹽,較佳地來自溴化鈉、溴化鉀、溴化銨及/或其混合物。較佳地,若硫酸根離子用於水性三價鉻電鍍浴,則亦存在溴離子。The process of the present invention is preferred wherein in step (b) the halide anion comprises, in some cases preferably in addition to the chloride anion, a bromide anion. Bromide ions generally avoid anodic formation of undesired hexavalent chromium species. Preferably, based on the total volume of the aqueous trivalent chromium electroplating bath, the bromide ion has a range of 3 g/L to 20 g/L, preferably 4 g/L to 18 g/L, More preferably in the range of 5 g/L to 16 g/L, even more preferably in the range of 6 g/L to 14 g/L, most preferably in the range of 7 g/L to 12 g/L concentration within. The bromide ions are preferably derived from bromide salts, preferably from sodium bromide, potassium bromide, ammonium bromide and/or mixtures thereof. Preferably, if sulfate ions are used in the aqueous trivalent chromium plating bath, bromide ions are also present.
本發明之方法為較佳的,其中在步驟(b)中,水性三價鉻電鍍浴進一步包含銨離子。The method of the present invention is preferred, wherein in step (b), the aqueous trivalent chromium electroplating bath further contains ammonium ions.
本發明之方法為較佳的,其中在步驟(b)中,水性三價鉻電鍍浴進一步包含一種或大於一種pH緩衝液化合物。最佳地,一種或大於一種pH緩衝液化合物區別(亦即,不同)於(ii)。此較佳地意謂一種或大於一種pH緩衝液化合物不包含羧酸,較佳地不包含有機酸。The method of the present invention is preferred, wherein in step (b), the aqueous trivalent chromium plating bath further comprises one or more than one pH buffer compound. Optimally, one or more than one pH buffer compound differs (ie, differs) from (ii). This preferably means that the one or more than one pH buffer compound does not comprise carboxylic acids, preferably no organic acids.
在許多情況下,本發明之方法為較佳的,其中在水性三價鉻電鍍浴中,一種或大於一種pH緩衝液化合物包含含硼化合物,較佳地硼酸及/或硼酸鹽,最佳地硼酸。較佳的硼酸鹽為硼酸鈉。In many cases, the method of the present invention is preferred, wherein in the aqueous trivalent chromium plating bath, one or more than one pH buffer compound comprises boron-containing compounds, preferably boric acid and/or borate salts, most preferably boric acid. A preferred borate is sodium borate.
本發明之方法為通常較佳的,其中在水性三價鉻電鍍浴中,以水性三價鉻電鍍浴之總體積計,一種或大於一種pH緩衝液化合物具有在30 g/L至250 g/L的範圍內,較佳地在35 g/L至200 g/L的範圍內,更佳地在40 g/L至150 g/L的範圍內,甚至更佳地在45 g/L至100 g/L的範圍內,最佳地在50 g/L至75 g/L的範圍內之總濃度。此甚至更佳地適用於該含硼化合物,又甚至更佳地適用於該硼酸連同該硼酸鹽,最佳地適用於該硼酸。最佳地,一種或大於一種pH緩衝液化合物包含硼酸,但不包含硼酸鹽。因此,本發明之方法為最佳的,其中以水性三價鉻電鍍浴之總體積計,水性三價鉻電鍍浴較佳地以在35 g/L至90 g/L,較佳地40 g/L至80 g/L,更佳地50 g/L至70 g/L,最佳地56 g/L至66 g/L的範圍內之總量濃度包含硼酸。The method of the present invention is generally preferred, wherein in the aqueous trivalent chromium electroplating bath, one or more than one pH buffer compound has a pH value between 30 g/L and 250 g/L, based on the total volume of the aqueous trivalent chromium electroplating bath. In the range of L, preferably in the range of 35 g/L to 200 g/L, more preferably in the range of 40 g/L to 150 g/L, even more preferably in the range of 45 g/L to 100 The total concentration in the range of g/L, optimally in the range of 50 g/L to 75 g/L. This applies even better to the boron-containing compound, and even better to the boric acid as well as to the borate, most preferably to the boric acid. Optimally, the one or more than one pH buffer compounds comprise boric acid but not borate. Therefore, the method of the present invention is the best, wherein based on the total volume of the aqueous trivalent chromium electroplating bath, the aqueous trivalent chromium electroplating bath is preferably at 35 g/L to 90 g/L, preferably 40 g Boronic acid is included in a total concentration in the range of 50 g/L to 80 g/L, more preferably 50 g/L to 70 g/L, most preferably 56 g/L to 66 g/L.
然而,在一些其他情況下,水性三價鉻電鍍浴不明確包含不同pH緩衝液化合物。相反地,用於該等三價鉻離子之一種或大於一種錯合劑以此類量存在且以使得該一種或大於一種錯合劑不僅充當三價鉻離子之錯合劑,且另外充當pH緩衝液化合物的方式進行選擇。在本發明之上下文中,此不為較佳的,但係可能的。However, in some other cases, aqueous trivalent chromium plating baths do not explicitly contain different pH buffer compounds. Conversely, the one or more than one complexing agent for the trivalent chromium ions is present in such an amount and such that the one or more than one complexing agent not only acts as a complexing agent for the trivalent chromium ions, but additionally acts as a pH buffer compound way to choose. In the context of the present invention, this is not preferred, but possible.
本發明之方法為較佳的,其中水性三價鉻電鍍浴大體上不含包含鋅之離子及/或化合物,較佳地不包含包含鋅之離子及/或化合物。較佳地,暗鉻層大體上不含鋅,較佳地不包含鋅。The method of the present invention is preferred wherein the aqueous trivalent chromium electroplating bath is substantially free of ions and/or compounds comprising zinc, preferably free of ions and/or compounds comprising zinc. Preferably, the dark chromium layer is substantially free of zinc, preferably contains no zinc.
本發明之方法為較佳的,其中水性三價鉻電鍍浴不為轉化處理組合物。換言之,水性三價鉻電鍍浴不適合於轉化塗層及/或不適合塗覆於鋅或鋅合金層上。換言之,本發明之方法不為轉化塗佈方法。The method of the present invention is preferred wherein the aqueous trivalent chromium electroplating bath is not a conversion treatment composition. In other words, aqueous trivalent chromium electroplating baths are not suitable for conversion coatings and/or for application over zinc or zinc alloy layers. In other words, the method of the present invention is not a conversion coating method.
本發明之方法為較佳的,其中基板大體上不含鋅及鋅合金層,較佳地不包含鋅及鋅合金層。The method of the present invention is preferred, wherein the substrate is substantially free of zinc and zinc alloy layers, preferably free of zinc and zinc alloy layers.
本發明之方法為較佳的,其中水性三價鉻電鍍浴大體上不含氟離子,較佳地不包含氟離子。較佳地,暗鉻層大體上不含氟,較佳地不包含氟。The method of the present invention is preferred wherein the aqueous trivalent chromium electroplating bath is substantially free of, preferably free of, fluoride ions. Preferably, the dark chrome layer is substantially fluorine-free, preferably fluorine-free.
本發明之方法為較佳的,其中水性三價鉻電鍍浴大體上不含,較佳地不包含磷酸根陰離子,更佳地大體上不含含磷化合物,較佳地不包含含磷化合物。較佳地,暗鉻層大體上不含磷,較佳地不包含磷。The method of the present invention is preferred wherein the aqueous trivalent chromium electroplating bath is substantially free, preferably free of phosphate anions, more preferably substantially free, preferably free of phosphorus containing compounds. Preferably, the dark chromium layer is substantially free of phosphorus, preferably contains no phosphorus.
本發明之方法為較佳的,其中水性三價鉻電鍍浴大體上不含亞硫酸根陰離子,較佳地不包含亞硫酸根陰離子。The method of the present invention is preferred wherein the aqueous trivalent chromium electroplating bath is substantially free of sulfite anions, preferably free of sulfite anions.
本發明之方法為較佳的,其中水性三價鉻電鍍浴大體上不含包含氧化數為+6之鉻的化合物,較佳地不包含包含氧化數為+6之鉻的化合物。因此,該電鍍浴大體上不含六價鉻,較佳地不包含六價鉻。此尤其意謂至少不旨在將六價鉻添加至水性三價鉻電鍍浴中。The method of the present invention is preferred wherein the aqueous trivalent chromium electroplating bath is substantially free of compounds comprising chromium with an oxidation number of +6, preferably free of compounds comprising chromium with an oxidation number of +6. Thus, the electroplating bath is substantially free of hexavalent chromium, preferably free of hexavalent chromium. This means in particular that at least no addition of hexavalent chromium to the aqueous trivalent chromium electroplating bath is intended.
在一些情況下,本發明之方法為較佳的,其中水性三價鉻電鍍浴大體上不含包含鈷之離子及/或化合物,較佳地不包含包含鈷之離子及/或化合物。較佳地,暗鉻層大體上不含鈷,較佳地不包含鈷。然而,在其他情況下,本發明之方法為較佳的,其中水性三價鉻電鍍浴包含包含鈷之離子及/或化合物。較佳地,暗鉻層包含鈷。儘管鈷為環境可疑的,但在一些情況下,鈷提供額外暗化效應。In some cases, the method of the present invention is preferred, wherein the aqueous trivalent chromium electroplating bath is substantially free of cobalt-containing ions and/or compounds, preferably free of cobalt-containing ions and/or compounds. Preferably, the dark chrome layer is substantially cobalt free, preferably cobalt free. In other cases, however, the method of the present invention is preferred wherein the aqueous trivalent chromium electroplating bath contains ions and/or compounds comprising cobalt. Preferably, the dark chromium layer contains cobalt. Although cobalt is environmentally questionable, in some cases cobalt provides an additional darkening effect.
本發明之方法為較佳的,其中水性三價鉻電鍍浴大體上不含可溶鋁化合物(包括其鹽),較佳地不包含可溶鋁化合物(包括其鹽),較佳地不包含溶解鋁離子。The method of the present invention is preferred wherein the aqueous trivalent chromium electroplating bath is substantially free of soluble aluminum compounds (including salts thereof), preferably free of soluble aluminum compounds (including salts thereof), preferably free of Dissolve aluminum ions.
本發明之方法為較佳的,其中水性三價鉻電鍍浴大體上不含鎳離子,較佳地不包含鎳離子。在一些情況下,觀測到高達150 ppm之典型的Ni污染,其基本上為可接受的且因此視為大體上不含鎳離子。因此,在一些情況下,較佳為以水性三價鉻電鍍浴之總重量計,鎳離子具有在0 ppm至200 ppm,較佳地1 ppm至150 ppm,最佳地2 ppm至100 ppm的範圍內之濃度。然而,最佳為水性三價鉻電鍍浴不含鎳。較佳地,暗鉻層大體上不含鎳,較佳地不包含鎳。The method of the present invention is preferred wherein the aqueous trivalent chromium electroplating bath is substantially free of nickel ions, preferably free of nickel ions. In some cases typical Ni contamination of up to 150 ppm was observed, which is essentially acceptable and thus considered substantially free of nickel ions. Therefore, in some cases, preferably based on the total weight of the aqueous trivalent chromium electroplating bath, nickel ions have a concentration of 0 ppm to 200 ppm, preferably 1 ppm to 150 ppm, and most preferably 2 ppm to 100 ppm. concentration within the range. Optimally, however, the aqueous trivalent chromium plating bath does not contain nickel. Preferably, the dark chrome layer is substantially nickel-free, preferably nickel-free.
避免環境可疑鎳及鈷物種為通常較佳的。此通常引起不複雜的廢水處理及浴處置。另外,通常既不需要鎳亦不需要鈷來獲得暗色調。It is generally preferred to avoid environmentally questionable nickel and cobalt species. This usually results in uncomplicated wastewater treatment and bath disposal. Additionally, neither nickel nor cobalt is generally required to obtain dark shades.
本發明之方法為較佳的,其中水性三價鉻電鍍浴大體上不含胺磺酸及其鹽,較佳地不包含胺磺酸及其鹽。The method of the present invention is preferred, wherein the aqueous trivalent chromium electroplating bath is substantially free of sulfamic acid and its salts, preferably free of sulfamic acid and its salts.
在本發明之方法之步驟(c)中,使基板與水性三價鉻電鍍浴接觸且施加電流,使得暗鉻層電解沉積於基板上。In step (c) of the method of the present invention, the substrate is brought into contact with an aqueous trivalent chromium electroplating bath and an electric current is applied so that a dark chromium layer is electrolytically deposited on the substrate.
本發明之方法為較佳的,其中步驟(c)中之電流為較佳地在3 A/dm 2至30 A/dm 2,更佳地4 A/dm 2至25 A/dm 2,甚至更佳地5 A/dm 2至20 A/dm 2,最佳地6 A/dm 2至18 A/dm 2的範圍內之直流電。 The method of the present invention is preferred, wherein the current in step (c) is preferably 3 A/dm 2 to 30 A/dm 2 , more preferably 4 A/dm 2 to 25 A/dm 2 , or even More preferably direct current in the range of 5 A/dm 2 to 20 A/dm 2 , most preferably 6 A/dm 2 to 18 A/dm 2 .
本發明之方法為較佳,其中在步驟(c)中,利用至少一個陽極。至少一個陽極較佳地選自由以下組成之群:石墨陽極、貴金屬陽極及混合金屬氧化物陽極(MMO)。The method of the present invention is preferred, wherein in step (c) at least one anode is utilized. The at least one anode is preferably selected from the group consisting of graphite anodes, noble metal anodes and mixed metal oxide anodes (MMO).
較佳貴金屬陽極包含鍍鉑鈦陽極及/或鉑陽極。Preferred noble metal anodes include platinized titanium anodes and/or platinum anodes.
較佳的混合金屬氧化物陽極包含經氧化鉑塗佈之鈦陽極及/或經氧化銥塗佈之鈦陽極。Preferred mixed metal oxide anodes include platinum oxide coated titanium anodes and/or iridium oxide coated titanium anodes.
本發明之方法為較佳的,其中電解沉積於步驟(c)中之暗鉻層具有在0.05 µm至1 µm,較佳地0.1 µm至0.8 µm,更佳地0.125 µm至0.6 µm,最佳地0.15 µm至0.5 µm的範圍內之層厚度。The method of the present invention is preferred, wherein the dark chromium layer electrolytically deposited in step (c) has a thickness of 0.05 µm to 1 µm, preferably 0.1 µm to 0.8 µm, more preferably 0.125 µm to 0.6 µm, the best Layer thickness in the range of 0.15 µm to 0.5 µm.
本發明之方法為較佳的,其中在步驟(c)中,進行接觸,保持1分鐘至20分鐘,較佳地2分鐘至15分鐘,更佳地3分鐘至10分鐘。The method of the present invention is preferred, wherein in step (c), contacting is carried out for 1 minute to 20 minutes, preferably 2 minutes to 15 minutes, more preferably 3 minutes to 10 minutes.
本發明之方法為較佳的,其中在步驟(c)中,在20℃至60℃,較佳地25℃至52℃,更佳地30℃至45℃的範圍內之溫度下進行接觸。The method of the present invention is preferred wherein in step (c) the contacting is carried out at a temperature in the range of 20°C to 60°C, preferably 25°C to 52°C, more preferably 30°C to 45°C.
在本發明之方法之步驟(c)中,暗鉻層較佳地以根據L*a*b*色彩空間系統之60或更小,更佳地58或更小,甚至更佳地56或更小,又甚至更佳地53或更小,最佳地51或更小之亮度值L*電解沉積(亦即,其為電鍍鉻層)於基板上。In step (c) of the method of the present invention, the dark chrome layer is preferably 60 or less according to the L*a*b* color space system, more preferably 58 or less, even more preferably 56 or less A lightness value L* of small, even better 53 or less, most preferably 51 or less is electrodeposited (ie it is an electroplated chrome layer) on the substrate.
本發明之方法為更佳的,其中在步驟(c)中,根據L*a*b色彩系統,暗鉻層之L*值在45至59、較佳地47至55、最佳地49至53的範圍內。最佳地,暗鉻層包含化學元素鋁。此意謂該等膠態粒子較佳地併入至暗鉻層中。The method of the present invention is more preferred, wherein in step (c), according to the L*a*b color system, the L* value of the dark chrome layer is between 45 and 59, preferably between 47 and 55, and most preferably between 49 and 53 range. Optimally, the dark chrome layer contains the chemical element aluminium. This means that the colloidal particles are preferably incorporated into the dark chrome layer.
本發明之方法為較佳的,其中在步驟(c)中,根據L*a*b色彩系統,暗鉻層之a*值在-0.5至+3.0,較佳地0至2.5,更佳地+0.3至+2,最佳地+0.5至1.5的範圍內。The method of the present invention is preferred, wherein in step (c), according to the L*a*b color system, the a* value of the dark chrome layer is between -0.5 and +3.0, preferably 0 to 2.5, more preferably +0.3 to +2, optimally in the range of +0.5 to 1.5.
本發明之方法為較佳的,其中根據L*a*b色彩系統,暗鉻層之b*值在+3.1至+7,較佳地3.5至6.5,更佳地+4至+6,最佳地+4.5至5.5的範圍內。The method of the present invention is preferred, wherein according to the L*a*b color system, the b* value of the dark chrome layer is from +3.1 to +7, preferably from 3.5 to 6.5, more preferably from +4 to +6, most preferably Good place in the range of +4.5 to 5.5.
本發明之方法為較佳的,該方法進一步包含在步驟(c)之前,沉積至少一個金屬或金屬合金層之至少一個鍍金屬步驟,最佳地沉積至少一個鎳或鎳合金層之至少一個鍍鎳步驟。在許多情況下,較佳地涉及兩個或甚至三個此類鍍金屬步驟。It is preferred that the method of the present invention further comprises, prior to step (c), at least one metallization step of depositing at least one metal or metal alloy layer, preferably at least one plating step of depositing at least one nickel or nickel alloy layer nickel step. In many cases, two or even three such metallization steps are preferably involved.
最佳地,至少一個鎳或鎳合金層包含至少一個亮鎳層及/或(較佳地或)至少一個緞面鎳層,最佳地至少一個亮鎳層。Optimally, the at least one layer of nickel or nickel alloy comprises at least one layer of bright nickel and/or (preferably or) at least one layer of satin nickel, most preferably at least one layer of bright nickel.
本發明之方法為更佳的,其中除該至少一個亮鎳層及/或該至少一個緞面鎳層以外,至少一個鎳或鎳合金層包含至少一個半亮鎳層,較佳地至少一個半亮鎳層。至少一個半亮鎳層較佳地為視情況選用之。最佳地(若施加)在該至少一個亮鎳層及/或該至少一個緞面鎳層之前沉積至少一個半亮鎳層。The method of the present invention is more preferred, wherein in addition to the at least one bright nickel layer and/or the at least one satin nickel layer, at least one nickel or nickel alloy layer comprises at least one semi-bright nickel layer, preferably at least one semi-bright nickel layer. Bright nickel finish. At least one layer of semi-bright nickel is preferably optional. Optimally, if applied, at least one semi-bright nickel layer is deposited before the at least one bright nickel layer and/or the at least one satin nickel layer.
本發明之方法亦為較佳的,其中至少一個鎳或鎳合金層包含至少一個MPS鎳層,較佳地除該至少一個亮鎳層及/或該至少一個緞面鎳層以外之至少一個MPS鎳層,最佳地除該至少一個亮鎳層及/或該至少一個緞面鎳層以外,且進一步除該至少一個半亮鎳層以外之至少一個MPS鎳層。在本發明之上下文中,MPS表示MPS鎳層包含不導電微粒子,其在後續鉻層中,較佳地在暗鉻層中產生微孔。至少一個MPS鎳層較佳地為視情況選用之。The method of the invention is also preferred, wherein at least one nickel or nickel alloy layer comprises at least one MPS nickel layer, preferably at least one MPS in addition to the at least one bright nickel layer and/or the at least one satin nickel layer A nickel layer, preferably at least one MPS nickel layer in addition to the at least one bright nickel layer and/or the at least one satin nickel layer, and further in addition to the at least one semi-bright nickel layer. In the context of the present invention, MPS means that the MPS nickel layer contains non-conductive micro-particles, which generate micropores in the subsequent chromium layer, preferably in the dark chromium layer. At least one MPS nickel layer is preferably optional.
在一些情況下,本發明之方法為較佳的,其中MPS鎳層鄰近於暗鉻層。In some cases, the method of the present invention is preferred where the MPS nickel layer is adjacent to the dark chromium layer.
在其他情況下,本發明之方法為較佳的,其中暗鉻層鄰近於至少一個亮鎳層及/或至少一個緞面鎳層,其在多數情況下較佳,最佳地與至少一個亮鎳層組合。In other cases, the method of the present invention is preferred, wherein the dark chromium layer is adjacent to at least one bright nickel layer and/or at least one satin nickel layer, which in most cases is preferred, optimally with at least one bright nickel layer. Nickel layer combination.
較佳地,暗鉻層為層堆疊之一部分。Preferably, the dark chrome layer is part of the layer stack.
本發明進一步係關於一種水性三價鉻電鍍浴,其包含 (i) 三價鉻離子, (ii) 用於該等三價鉻離子之一種或大於一種錯合劑, (iii) 含有化學元素鋁之膠態粒子, (iv) 具有氧化數為+5或更低之硫原子的第一含硫化合物,及 (v) 視情況,不同於(iv)之具有氧化數為+5或更低之硫原子的第二含硫化合物。 The present invention further relates to an aqueous trivalent chromium electroplating bath comprising (i) trivalent chromium ions, (ii) for one or more than one complexing agent for such trivalent chromium ions, (iii) colloidal particles containing the chemical element aluminum, (iv) the first sulfur-containing compound having a sulfur atom with an oxidation number of +5 or less, and (v) Optionally, a second sulfur-containing compound different from (iv) having a sulfur atom with an oxidation number of +5 or less.
較佳地,關於本發明之方法,特定言之關於本發明之方法所使用之水性三價鉻電鍍浴之前述同樣地適用於本發明之水性三價鉻電鍍浴,最佳地,描述為尤佳的特徵。Preferably, with regard to the method of the present invention, in particular, the foregoing statements regarding the aqueous trivalent chromium electroplating bath used in the method of the present invention are equally applicable to the aqueous trivalent chromium electroplating bath of the present invention, and are best described as especially good features.
此外,本發明亦關於一種基板,其包含暗鉻層,其中暗鉻層包含化學元素鋁且根據L*a*b色彩系統,具有60或更小,較佳地58或更小,更佳地56或更小,甚至更佳地53或更小,最佳地51或更小之L*值,其中基板包含塑膠基板。Furthermore, the present invention also relates to a substrate comprising a dark chromium layer, wherein the dark chromium layer comprises the chemical element aluminum and has a color of 60 or less, preferably 58 or less, more preferably according to the L*a*b color system An L* value of 56 or less, even more preferably 53 or less, most preferably 51 or less, wherein the substrate comprises a plastic substrate.
較佳地,關於本發明之方法,特定言之關於藉由本發明之方法獲得之暗鉻層之前述同樣適用於本發明之基板,最佳地描述為尤佳的特徵。此最佳地適用於先前關於本發明之方法明確或含蓄提及之暗鉻層的外觀及成分。Preferably, what has been said previously regarding the method of the invention, in particular about the dark chrome layer obtained by the method of the invention, also applies to the substrate of the invention, is best described as a particularly preferred feature. This applies optimally to the appearance and composition of the dark chrome layer mentioned above explicitly or implicitly in relation to the method of the invention.
本發明之基板為極佳的,其中暗鉻層包含化學元素鋁且根據L*a*b色彩系統,具有在45至59,較佳地47至55,最佳地49至53的範圍內之L*值。The substrate of the invention is excellent, wherein the dark chrome layer comprises the chemical element aluminum and has a color in the range of 45 to 59, preferably 47 to 55, most preferably 49 to 53 according to the L*a*b color system. L*value.
本發明之基板為尤佳的,其中暗鉻層之a*值在-0.5至+3.0,較佳地0至2.5,更佳地+0.3至+2,最佳地+0.5至1.5的範圍內。The substrate of the present invention is particularly preferred, wherein the a* value of the dark chromium layer is in the range of -0.5 to +3.0, preferably 0 to 2.5, more preferably +0.3 to +2, and most preferably +0.5 to 1.5 .
本發明之基板為尤佳的,其中暗鉻層之b*值在+3.1至+7,較佳地3.5至6.5,更佳地+4至+6,最佳地+4.5至5.5的範圍內。The substrate of the present invention is particularly preferred, wherein the b* value of the dark chromium layer is in the range of +3.1 to +7, preferably 3.5 to 6.5, more preferably +4 to +6, most preferably +4.5 to 5.5 .
本發明之基板為最佳的,其中暗鉻層大體上不含鈷,較佳地不包含鈷。相比之下,在其他情況下,其中暗鉻層包含鈷為較佳的。Substrates of the present invention are preferred wherein the dark chrome layer is substantially cobalt free, preferably cobalt free. In contrast, other cases where the dark chrome layer contains cobalt are preferred.
本發明之基板為最佳的,其中暗鉻層大體上不含鎳,較佳地不包含鎳。Most preferred are substrates of the invention wherein the dark chrome layer is substantially nickel-free, preferably nickel-free.
較佳地,暗鉻層不為暗鉻層與基板之間的唯一金屬層。Preferably, the dark chrome layer is not the only metal layer between the dark chrome layer and the substrate.
本發明之基板為較佳的,其中基板包含暗鉻層下方之至少一個鎳層或鎳合金層。The substrate of the present invention is preferred, wherein the substrate comprises at least one nickel layer or nickel alloy layer below the dark chromium layer.
本發明之基板為較佳的,其中該至少一個鎳層或鎳合金層包含至少一個亮鎳層或至少一個緞面鎳層。在許多情況下,此為最佳的。The substrate of the present invention is preferred, wherein the at least one nickel layer or nickel alloy layer comprises at least one bright nickel layer or at least one satin nickel layer. In many cases, this is optimal.
本發明之基板為較佳的,其中該至少一個鎳層或鎳合金層包含至少一個半亮鎳層,較佳地除該至少一個亮鎳層及/或該至少一個緞面鎳層以外之至少一個半亮鎳層。至少一個半亮鎳層較佳地為視情況選用之。最佳地,至少一個半亮鎳層為最接近基板之(所有鎳層中之)鎳層。The substrate of the present invention is preferred, wherein the at least one nickel layer or nickel alloy layer comprises at least one semi-bright nickel layer, preferably at least one layer other than the at least one bright nickel layer and/or the at least one satin nickel layer A layer of semi-bright nickel. At least one layer of semi-bright nickel is preferably optional. Optimally, at least one semi-bright nickel layer is the nickel layer (of all nickel layers) closest to the substrate.
本發明之基板為較佳的,其中該至少一個鎳層或鎳合金層包含至少一個MPS鎳層,較佳地除該至少一個亮鎳層及/或該至少一個緞面鎳層以外之至少一個MPS鎳層,最佳地除該至少一個亮鎳層及/或該至少一個緞面鎳層以外,且進一步除該至少一個半亮鎳層以外之至少一個MPS鎳層。在本發明之上下文中,MPS表示微孔。The substrate of the present invention is preferred, wherein the at least one nickel layer or nickel alloy layer comprises at least one MPS nickel layer, preferably at least one other than the at least one bright nickel layer and/or the at least one satin nickel layer The MPS nickel layer, preferably at least one MPS nickel layer in addition to the at least one bright nickel layer and/or the at least one satin nickel layer, and further in addition to the at least one semi-bright nickel layer. In the context of the present invention, MPS denotes micropores.
本發明之基板為較佳的,其中該至少一個MPS鎳層面向暗鉻層所在的一側且面向該至少一個亮鎳層或該至少一個緞面鎳層所在的另一側。The substrate of the present invention is preferred, wherein the at least one MPS nickel layer faces the side where the dark chrome layer is located and faces the other side where the at least one bright nickel layer or the at least one satin nickel layer is located.
本發明之基板為較佳的,其中該至少一個半亮鎳層位於該至少一個亮鎳層或該至少一個緞面鎳層下方。The substrate of the present invention is preferred, wherein the at least one semi-bright nickel layer is located below the at least one bright nickel layer or the at least one satin nickel layer.
本發明之基板為甚至更佳的,其中暗鉻層為層堆疊的一部分,層堆疊沿暗鉻層至基板之方向包含(鄰近或不鄰近): (i) 暗鉻層, (ii) 視情況,至少一個MPS鎳層, (iii) 至少一個亮鎳層及/或(較佳地或)至少一個緞面鎳層,及 (iv) 視情況,至少一個半亮鎳層。 Even more preferred is a substrate of the invention wherein the dark chromium layer is part of a layer stack comprising (adjacent or not) in the direction from the dark chromium layer to the substrate: (i) dark chrome layer, (ii) as the case may be, at least one layer of MPS nickel, (iii) at least one layer of bright nickel and/or (preferably or) at least one layer of satin nickel, and (iv) At least one layer of semi-bright nickel, as appropriate.
若尚未另外陳述,則關於本發明之基板的前述特定特徵較佳地同樣適用於本發明之方法。If not stated otherwise, the aforementioned specific features with respect to the substrate of the invention preferably also apply to the method of the invention.
在一些情況下,層堆疊較佳地包含密封劑層及/或抗指紋(anti-fingerprint)層,最佳地在暗鉻層上。若兩者均被施加,則較佳地首先施加密封劑層,隨後施加抗指紋層,其較佳地形成極最外層。In some cases, the layer stack preferably includes a sealant layer and/or an anti-fingerprint layer, most preferably on a dark chrome layer. If both are applied, the sealant layer is preferably applied first, followed by the anti-fingerprint layer, which preferably forms the very outermost layer.
在以下實例中進一步說明本發明之精神而不限制如本文申請專利範圍中所定義的本發明之範疇。 實例(a) 提供基板: The spirit of the present invention is further illustrated in the following examples without limiting the scope of the present invention as defined in the patent claims herein. Example (a) provides the substrate:
對於以下實例,將銅板(99 mm×70 mm)用作基板,主要用於模擬沉積有銅層之塑膠基板。For the following examples, a copper plate (99 mm x 70 mm) was used as the substrate, mainly for simulating a plastic substrate on which a copper layer is deposited.
在第一步驟中,藉由在室溫(RT)下用Uniclean®279 (Atotech之產品),100 g/L進行電解除油來清潔基板。然後,用10體積% H 2SO 4浸洗銅板且用水沖洗。 In the first step, the substrate was cleaned by electrolytic degreasing with Uniclean® 279 (product of Atotech), 100 g/L at room temperature (RT). Then, the copper plate was dipped with 10 vol% H 2 SO 4 and rinsed with water.
在第二步驟中,對經清潔及沖洗之基板進行鍍鎳以在銅板頂部上獲得亮鎳層(參數:在4 A/dm 2下10 min;Makrolux® NF電解質;Atotech之產品)。 (b) 提供水性三價鉻電鍍浴 In a second step, the cleaned and rinsed substrate was nickel-plated to obtain a bright nickel layer on top of the copper plate (parameters: 10 min at 4 A/dm 2 ; Makrolux® NF electrolyte; product of Atotech). (b) Provision of aqueous trivalent chromium plating baths
使用以下三價鉻鹼電鍍浴水溶液: 128 g/L 鹼性硫酸鉻 46 g/L 甲酸 60 g/L 硼酸 12 g/L 溴化銨 100 g/L 氯化銨 110 g/L 氯化鉀 25-45 g/L 甲硫胺酸 0.1 g/L 二戊基磺基丁二酸鈉 Use the following aqueous trivalent chromium alkaline plating bath solutions: 128 g/L basic chromium sulfate 46 g/L formic acid 60 g/L boric acid 12 g/L ammonium bromide 100 g/L ammonium chloride 110 g/L Potassium chloride 25-45 g/L Methionine 0.1 g/L Sodium Dipentyl Sulfosuccinate
其他成分及量概述於下表1及表2中。在表1中,「E」係指根據本發明之實例,其中在表2中,「CE」係指不根據本發明之比較例。Other ingredients and amounts are summarized in Tables 1 and 2 below. In Table 1, "E" refers to an example according to the present invention, wherein in Table 2, "CE" refers to a comparative example not according to the present invention.
最終pH值為約3。The final pH was about 3.
在根據本發明之所有實例(亦即,E1至E11)中,使用粒徑D 50為25 nm之氧化鋁奈米粒子(Nanobyk-3603;BYK-Chemie GmbH)。對於比較例,完全不使用粒子或使用粒徑為20 nm之SiO 2奈米粒子(ThermoFisher;43110;至少40%濃度)。 (c) 使基板與該電鍍浴接觸 In all examples according to the invention (ie E1 to E11 ), alumina nanoparticles (Nanobyk-3603; BYK-Chemie GmbH) with a particle size D50 of 25 nm were used. For comparative examples, no particles were used at all or SiO 2 nanoparticles (ThermoFisher; 43110; at least 40% concentration) with a particle size of 20 nm were used. (c) Bringing the substrate into contact with the plating bath
在具有石墨陽極且安裝基板作為陰極之赫爾電池(Hull Cell)中進行電鍍。將5 A之電流施加至水性三價鉻電鍍浴,保持3分鐘,該浴對於所有實例(包括比較例)之溫度為約35℃。Electroplating was performed in a Hull Cell with a graphite anode and a mounted substrate as cathode. A current of 5 A was applied to the aqueous trivalent chromium electroplating bath for 3 minutes, the temperature of the bath being about 35°C for all examples (including comparative examples).
因此,將各別暗鉻層沉積於鍍鎳銅板之頂部上。隨後,用水沖洗具有暗鉻層之基板。Accordingly, a respective layer of dark chromium was deposited on top of the nickel-plated copper plate. Subsequently, the substrate with the dark chrome layer was rinsed with water.
藉由色度計(Konica Minolta CM-700 D分光光度計)判定根據L*a*b*色彩空間系統之顏色。藉由黑色及白色標準進行校準。在基板之中心中之區域處進行顏色判定。量測區域安置於距左邊緣1 cm且距下部邊緣2 cm處(左邊緣指向陽極)。
表1:根據本發明之組合物及結果之概述
比較例CE1及CE5至CE7展示不具有任何粒子而僅含有諸如甲硫胺酸之有機著色劑之條件。有趣地係,二氧化矽奈米粒子之存在不顯著降低L*值(比較CE1與CE2至CE4);至少不針對含甲硫胺酸之電鍍浴。在此等情況下,L*值基本保持為55。儘管如此,所有所獲得鉻層皆已為暗的。Comparative Examples CE1 and CE5 to CE7 show conditions that do not have any particles but contain only an organic colorant such as methionine. Interestingly, the presence of silica nanoparticles does not significantly reduce the L* value (compare CE1 with CE2 to CE4); at least not for the plating baths containing methionine. In these cases, the L* value remained substantially at 55. Nevertheless, all chrome layers obtained were already dark.
然而,在添加含有化學元素鋁,特定言之氧化鋁奈米粒子之膠態粒子後,觀測到L*值之顯著進一步減小(亦即,進一步暗化)。詳言之:CE1 (L* 55.8) => E1至E3 (L* 48.9至49.9;至少減小約10%);CE5 (L* 61.7) => E4至E6 (L* 55.2至56.0;至少減小約9%);CE6 (L* 61.6) => E7至E9 (L* 55.7至57.6;至少減小約6%);以及CE7 (L* 58.9) => E10及E11 (L* 52.1至53.9;至少減小約8%)。However, after addition of colloidal particles containing the chemical element aluminum, in particular alumina nanoparticles, a significant further reduction in the L* value (ie further darkening) was observed. In detail: CE1 (L* 55.8) => E1 to E3 (L* 48.9 to 49.9; at least about 10% reduction); CE5 (L* 61.7) => E4 to E6 (L* 55.2 to 56.0; at least about 9% smaller); CE6 (L* 61.6) => E7 to E9 (L* 55.7 to 57.6; at least about 6% smaller); and CE7 (L* 58.9) => E10 and E11 (L* 52.1 to 53.9 ; by at least about 8%).
在各情境中,亦即在各比較例及其對應發明性實例中,L*值減小約6%與10%之間。In each context, ie in each comparative example and its corresponding inventive example, the L* value is reduced by between about 6% and 10%.
亦如表1及表2中所展示,在所有實例中,a*值基本上保持恆定。然而,添加含有化學元素鋁之膠態粒子顯著影響b*值,其基本上始終增加。詳言之:CE1 (b* +3.2) => E1至E3 (b*約+5.6);CE5 (b* 0) => E4至E6 (b* +2.6至+3.1);CE6 (b* +0.4) => E7至E9 (b* +1.9至+2.8);以及CE7 (b* +1.3) => E10及E11 (b* +4.0至+4.7)。因此,在含有化學元素鋁之膠態粒子之情況下,獲得較暖淡棕色色調。As also shown in Tables 1 and 2, the a* values remained substantially constant in all examples. However, the addition of colloidal particles containing the chemical element aluminum significantly affects the b* value, which essentially always increases. In detail: CE1 (b* +3.2) => E1 to E3 (b* about +5.6); CE5 (b* 0) => E4 to E6 (b* +2.6 to +3.1); CE6 (b* + 0.4) => E7 to E9 (b* +1.9 to +2.8); and CE7 (b* +1.3) => E10 and E11 (b* +4.0 to +4.7). Thus, in the case of colloidal particles containing the chemical element aluminum, a warmer beige shade is obtained.
藉由本發明獲得之暗鉻層為有光澤的。The dark chrome layers obtained by means of the invention are glossy.
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