TW202041706A - Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium - Google Patents

Abstract

There is provided a technique that includes a process chamber configured to process a substrate; a transfer chamber in communication with a lower portion of the process chamber, and configured to transfer the substrate to a substrate support disposed in the process chamber, and a heating chamber in communication with a lower portion of the transfer chamber, and configured to heat the substrate support and the substrate.

Description

Substrate processing device, semiconductor device manufacturing method and recording medium

The present invention relates to a substrate processing device for processing a substrate in a manufacturing step of a semiconductor device, a method of manufacturing a semiconductor device, and a recording medium.

In the heat treatment of the substrate (wafer) in the manufacturing step of the semiconductor device, for example, a vertical substrate processing apparatus is used. In the vertical substrate processing apparatus, a plurality of substrates are arranged in a vertical direction by a substrate holder, and the substrate holder is carried into the processing chamber. Thereafter, the processing gas is introduced into the processing chamber while the processing chamber is heated, and the substrate is subjected to a thin film formation process. For example, it is described in Patent Document 1. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2003-100736

(The problem to be solved by the invention)

The present invention provides a technology that can increase the yield of substrate processing. (Technical means to solve the problem)

According to one aspect of the present invention, for example, a technique is provided, which has: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support. (Compared with the effect of previous technology)

According to the present invention, the yield of substrate processing can be improved.

The present invention relates to a substrate processing device, which has: a substrate support for placing a substrate; a processing chamber for processing the substrate placed on the substrate support; communicating under the processing chamber to transfer the substrate to the substrate support The transfer chamber of the tool; the heating chamber connected to the lower part of the transfer chamber to heat the substrate support and the substrate; and the elevator part that moves the substrate support between the processing chamber, the transfer chamber and the heating chamber.

In addition, the present invention is a substrate processing method that uses a substrate supporting tool for placing a substrate; a processing chamber for processing the substrate placed on the substrate supporting tool; communicating under the processing chamber to transfer the substrate to The transfer chamber of the substrate support; the heating chamber connected to the lower part of the transfer chamber to heat the substrate support and the substrate; and the elevator part that moves the substrate support between the processing chamber, the transfer chamber and the heating chamber ; The substrate processing apparatus for processing substrates, characterized in that the drive lift section will transfer the substrate to the substrate support in the transfer chamber to the heating chamber and heated in the heating chamber, drive the lift section to the heated substrate It is conveyed to the processing chamber through the transfer chamber connected to the heating chamber, and the heated substrate is processed in the processing chamber. Furthermore, the present invention includes a substrate processing program, which includes the steps of transporting the substrate transferred to the substrate support in the transfer chamber to the heating chamber and heating it; and passing the heated substrate through the substrate connected to the heating chamber The step of transferring the chamber to the processing chamber; and the step of processing the heated substrate in the processing chamber.

The following figures illustrate the embodiments of the present invention. [Example 1]

Using FIG. 1, the structure of the semiconductor manufacturing apparatus of the first embodiment will be described. The semiconductor manufacturing apparatus of the present embodiment is configured as a vertical substrate processing apparatus (hereinafter referred to as a substrate processing system) 1 that performs substrate processing steps such as heat treatment as one of the manufacturing steps in the manufacturing method of a semiconductor device (device). As shown in FIG. 1, the substrate processing system 1 is a person who processes substrates 10, and is mainly composed of an IO station 61, an atmospheric transfer chamber 1200, a load lock chamber 1300, a vacuum transfer chamber 170, and a substrate processing apparatus 101.

1 shows a state in which a wafer boat 200 as a substrate support for supporting a plurality of substrates 10 is lowered to a storage chamber 300 provided below a chamber 180 on the side of a vacuum transfer chamber 170, and FIG. 2 is a diagram showing a part of FIG. 1. It shows a state where the wafer boat 200 as a substrate support is raised and located inside the first reaction tube 110. In addition, the vacuum transfer chamber 170 is also called a transfer module 170. In addition, the substrate processing apparatus 101 is also referred to as a processing module 101. Next, each configuration will be described in detail.

[Atmospheric transfer room‧IO station] In front of the substrate processing system 1, an IO station (load port) 61 is provided. The IO stand 61 is configured to be capable of mounting multiple compartments 62 as storage containers. The cabin 62 is used as a carrier for transporting the substrate 10 such as a silicon (Si) substrate, and the cabin 62 is configured such that the substrates (wafers) 10 are accommodated in multiple horizontal positions. In addition, a maximum of 25 substrates 10 are stored in the cabin 62.

A cover 60 is provided on the cabin 62, and is opened and closed by a cabin opener 1210 described later. The compartment opener 1210 opens and closes the cover 60 of the compartment 62 placed on the IO station 61, and allows the substrate 10 to enter and exit the compartment 62 by opening and closing the substrate loading and unloading port 1280. The IO station 61 is supplied and discharged from the cabin system by an in-step conveying device (RGV) (not shown).

The IO station 61 is adjacent to the atmospheric transfer chamber 1200. The atmospheric transfer chamber 1200 is on a side different from the IO station 61, and is connected to the transfer chamber 1300 described later.

In the atmosphere transfer chamber 1200, an atmosphere transfer robot 1220 as a first transfer robot that transfers the substrate 10 is installed. As shown in the figure, the atmospheric transfer robot 1220 is configured to be raised and lowered by an elevator 1230 provided in the atmospheric transfer chamber 1200, and is configured to be moved back and forth in the left and right directions by a linear actuator 1240.

As shown in the figure, a cleaning unit 1250 for supplying cleaning gas is provided on the upper part of the air transfer chamber 1200.

As shown in the figure, on the front side of the frame 1270 of the atmospheric transfer chamber 1200, a substrate carrying-in/outlet 1280 for carrying the substrate 10 in and out of the atmospheric carrying chamber 1200 and a cabin opener 1210 are provided. On the side opposite to the compartment opener 1210 while holding the substrate carry-in/out port 1280, that is, the outer side of the frame 1270, IO stations (load ports) 61 are provided.

On the back side of the frame 1270 of the atmospheric transfer chamber 1200, a substrate carry-out entrance 1290 for carrying the substrate 10 out of the transfer chamber 1300 is provided. The substrate carrying-out entrance 1290 is released and closed by a gate valve 1330 described later, so that the substrate 10 can be in and out.

[Transmission (L/L) Room] The transfer chamber 1300 is adjacent to the atmospheric transfer chamber 1200. Among the surfaces of the frame 1310 constituting the transfer chamber 1300, the vacuum transfer chamber 170 is arranged on a surface different from the atmospheric transfer chamber 1200 as described later. The transfer chamber 1300 changes the pressure in the frame 1310 according to the pressure of the atmospheric transfer chamber 1200 and the pressure of the vacuum transfer chamber 170, so it is configured to withstand negative pressure.

In the housing 1310, a substrate loading/unloading port 1340 is provided on the side adjacent to the vacuum transfer chamber 170. The substrate carrying-in/outlet 1340 is opened and closed by the gate valve 1350, so that the substrate 10 can be carried in and out.

Furthermore, in the transfer chamber 1300, a substrate mounting table 1320 on which the substrate 10 is mounted is provided.

[Vacuum transfer chamber 170] The substrate processing system 1 includes a vacuum transfer chamber (transfer module) 170 as a transfer chamber serving as a transfer space for transferring the substrate 10 under negative pressure. On each side of the vacuum transfer chamber 170, the transfer chamber 1300 and the substrate processing apparatus 101 for processing the substrate 10 are connected. At the approximate center of the vacuum transfer chamber 170, a transfer machine 30, which is a vacuum transfer robot that transfers (transfers) the substrate 10 under negative pressure, is provided with a flange 35 as a base.

The transfer machine 30, which is a vacuum transfer robot installed in the vacuum transfer chamber 170, is configured as shown in the figure, and is configured to maintain the airtightness of the vacuum transfer chamber 170 by the lifting mechanism portion 36 and the flange 35 Perform lifting.

[Substrate Processing Apparatus 101] The substrate processing apparatus 101 is provided with: a first reaction tube 110 having a cylindrical shape extending in the vertical direction; a reaction tube arranged inside the first reaction tube and constituted by a second reaction tube 120; and a reaction tube arranged in the first reaction tube The outer periphery of the tube 110 is a heater 100 as the first heating means (furnace body). The first reaction tube 110 and the second reaction tube 120 constituting the reaction tube are formed of materials such as quartz or SiC. The inside of the first reaction tube 110 is hermetically sealed to the outside by means not shown in the figure, and the inside of the second reaction tube 120 forms a processing chamber 115. Here, the first reaction tube 110 is also referred to as an outer tube, an outer tube, and an outer tube. In addition, the second reaction tube 120 is also referred to as an inner tube, an inner tube, and an inner tube. In addition, the example in which the first reaction tube 110 and the second reaction tube 120 constitute a reaction tube is illustrated here, but it is not limited to this. For example, when the reaction tube is composed of only the first reaction tube 110, the technique of the present invention can also be applied.

Furthermore, the heater 110 may be configured as an area heater having a plurality of areas in the up and down direction in a manner capable of performing area control in the up and down direction.

[Substrate Support] The wafer boat 200 as a substrate support is supported by the support rod 160 via the heat insulation portion 150. The wafer boat 200 is in a space partitioned by a plurality of circular plates 201, and the substrate 10 is placed on the substrate support portion 203 installed on the pillar 202, thereby placing a plurality of, for example, 5 substrates 10 in multiple stages in the vertical direction. support. The wafer boat 200 is formed of materials such as quartz or SiC. The heat insulating portion 150 and the wafer boat 200 constitute a substrate support. During substrate processing, the wafer boat 200 is housed in the second reaction tube 120 as shown in FIG. 2. In addition, an example in which five substrates 10 are supported on the wafer boat 200 is illustrated here, but it is not limited to this. For example, it may be configured as a wafer boat 200 that can support about 5 to 50 substrates 10. In addition, the circular plate 201 is also called a spacer.

[Insulation Department 150] The heat insulation portion 150 has a structure where heat conduction or transmission in the vertical direction is reduced. In addition, it may be configured to have a cavity inside the heat insulation part 150. Furthermore, as shown in the figure, a hole 151 may be formed under the heat insulating portion 150. By providing this hole 151, even if the wall surface of the heat insulation part 150 is not thickened, the pressure difference between the inside and the outside of the heat insulation part 150 can still be prevented. Furthermore, a cover heater 152 may also be provided in the heat insulation part 150.

Inside the storage chamber 300, a wafer boat 200 is arranged. A wafer boat elevator 40 as a lifting mechanism of the wafer boat 200 is provided outside the storage chamber 300, for example, below the outer side.

Inside the vacuum transfer chamber 170, with the flange 35 as a base, a transfer machine 30 as a vacuum transfer robot that transfers the substrate 10 between the transfer chamber 1300 and the chamber 180 is provided.

The transfer machine 30 has, for example, a clamp 31 for supporting one substrate 10, a telescopic arm 32, a rotating shaft 33, a base 34, a flange 35, a lifting mechanism 36, and the like. The vacuum transfer chamber 170 is configured by the flange 35 to maintain airtightness.

The structure is such that the transfer machine 30 is operated by the lifting mechanism portion 36 to transfer the substrate 10 between the transfer chamber 1300 and the wafer boat 200.

[Chamber 180] The chamber 180 is provided at the lower part of the second reaction tube 120 and includes a transfer chamber 330 and a heating chamber 320 as the storage chamber 300. The transfer chamber 330 is configured as a space in which the substrate 10 is placed (mounted) on the wafer boat 200 or taken out. The heating chamber 320 is configured as a space for heating the substrate 10 placed on the wafer boat 200. In the lower part of the chamber 180, the heat insulation part 150 supported by the support rod 160 is housed.

Moreover, the vertical length of the transfer chamber 330 is configured to be shorter than the vertical length of the heating chamber 320. In other words, the vertical length of the heating chamber 320 is configured to be longer than the vertical direction of the transfer chamber 330. With such a size relationship, it is possible to shorten the time from when the substrate 10 is placed on the wafer boat 200 to the heating of the substrate 10 as described later.

A cooling flow path 190 is sometimes provided at the substrate import port 331. At this time, there is a problem that the heated wafer boat 200, or the heat from the heater 100 and the heating part 321 is conducted to the cooling flow path 190, and the temperature rise rate of the new substrate 10 is reduced as described later.

With such a size relationship, the new substrate 10 can be kept away from the low-temperature region near the cooling flow path 190, and the heating rate of the new substrate 10 can be improved. In addition, the length of the heating chamber 320 in the vertical direction can also be said to be the length of the entire substrate mounting area including the heat insulation portion 150 and the wafer boat 200.

Here, the chamber 180 is made of metal materials such as SUS (stainless steel) or Al (aluminum). At this time, due to the heating chamber 320, the storage chamber 300 of the chamber 180 is expanding. At this time, as shown in FIG. 1, a cooling flow path 190 may be provided on the outer side of the storage chamber 300 of the chamber 180 to be configured to cool the storage chamber 300.

Furthermore, in the storage chamber 300 of the chamber 180, an inert gas supply pipe 301 for supplying inert gas to the inside is installed. The inert gas supply pipe 301 can also supply an inert gas to the interior of the storage chamber 300 to adjust the internal pressure of the storage chamber 300 to be higher than the internal pressure of the first reaction tube 110. With this configuration, it is possible to prevent the processing gas supplied to the processing chamber 115 inside the first reaction tube 110 from entering the storage chamber 300.

[Heating Chamber 320] The heating chamber 320 heats the space of the substrate 10 by the wafer boat 200 or the heating part 321 described later, and is provided below the transfer chamber 330. In the heating chamber 320, as shown in FIGS. 1 to 6, a window (such as quartz) 310 that penetrates infrared rays may also be formed. On the outside of this window, a heating part 321 composed of a plurality of lamp heaters aligned in the vertical direction can also be provided. Furthermore, the example in which a lamp heater is used as the heating part 321 is illustrated here, but the structure of the heating part 321 is not limited to this. For example, it may be a resistance heater. In addition, as shown in FIGS. 7 and 8, the heating unit 321 and the window 310 may not be provided. The heating part 321 or the window 310 may not be provided, and the substrate 10 may be heated by the heated wafer boat 200.

[Transfer Room 330] In the transfer chamber 330, the substrate 10 mounted on the wafer boat 200 is taken out from the wafer boat 200 through the substrate transfer port 331 using the transfer machine 30, and the new substrate 10 is placed on the wafer boat 200. In addition, a gate valve (GV) 332 for isolating the transfer chamber 330 and the chamber 180 is provided at the substrate transfer port 331.

The wafer lifter 40 supports the support rod 160. The wafer boat elevator 40 is driven to move the support rod 160 up and down, and the second reaction tube 120 is moved in or out of the wafer boat 200. The support rod 160 is connected to the rotation driving part 42 provided on the wafer boat elevator 40. By rotating the support rod 160 by the rotation driving part 42, the heat insulation part 150 and the wafer boat 200 can be rotated. The rotation drive part 42 and the support rod 160 are combined together as a rotation mechanism part.

In the substrate processing system 1, a gas used for substrate processing is supplied by a gas supply means (not shown) through a nozzle 130 as a gas supply part arranged inside the second reaction tube 120. The gas supplied from the nozzle 130 is appropriately replaced depending on the type of film to be formed. The nozzle 130 supplies raw material gas, reaction gas, inert gas, etc. to the inside of the second reaction tube 120.

On the other hand, among the gases supplied from the nozzle 130 to the second reaction tube 120, the reaction gas system not used for film formation passes through the upper gap 121 and the lower side between the second reaction tube 120 and the first reaction tube 110 The opening 122 is exhausted to the outside by an exhaust pipe 140 as an exhaust portion by an exhaust pump (not shown).

A pumping part 111 is formed at the lower end of the first reaction tube 110. The pumping part 111 is arranged on the lower side of the heater 100 to ensure a uniform heating area caused by the heater 100 inside the first reaction tube 110 and above the pumping part 111.

The opening 122 of the second reaction tube 120 is provided at a plurality of locations around the position where the pumping portion 111 is arranged. By providing the opening 122 around the position where the pumping portion 111 is arranged, that is, on the side close to the chamber 180 side, the inert gas supplied from the inert gas supply pipe 301 can be prevented from circling back to the treatment more than necessary The situation on the side of the room.

The wafer boat 200 as a substrate support is provided with a plurality of vertical pillars 202, a circular plate 201 supported by the plurality of pillars 202 at a certain interval, and a quartz circular plate 201 supported by the pillars 202 The substrate support portion 203 is constituted.

The wafer boat 200 supports multi-stage support by arranging, for example, five substrates 10 in the vertical direction in a horizontal posture and aligned with each other. Therefore, the substrates 10 are arranged at regular intervals. The wafer boat 200 is formed of a heat-resistant material such as quartz or SiC.

The second reaction tube 120 preferably has the smallest inner diameter that can safely carry the wafer boat 200 in and out.

As shown in FIG. 1 or FIG. 9, the substrate processing apparatus 101 or the substrate processing system 1 includes a controller 260 that controls the operation of each part.

FIG. 9 shows the outline of the controller 260. The control unit 260, which belongs to the control unit (control means), is configured with a CPU (Central Processing Unit) 260a, RAM (Random Access Memory) 260b, a memory device 260c, and I/O ports 260d computer. The RAM 260b, the memory device 260c, and the I/O port 260d are configured to exchange data with the CPU 260a via the internal bus 260e. The controller 260 is configured to be connectable to an input/output device 261 configured as a touch panel, or an external memory device 262, for example.

The memory device 260c is composed of, for example, flash memory, HDD (Hard Disk Drive, hard disk drive), etc. In the memory device 260c, a control program for controlling the operation of the substrate processing apparatus, a process recipe or the like for the procedures or conditions of the substrate processing described later, etc. are readable and stored. Moreover, the process recipe is combined to enable the controller 260 to execute the procedures in the substrate processing steps described later to obtain a predetermined result, which has the function as a program. Hereinafter, sometimes this formula or control program is collectively referred to as a program. Moreover, when the term "program" is used in this manual, it refers to the case where only the formula formula monomer is included, the case where only the control program monomer is included, or the case where both are included. In addition, the RAM 260b is configured as a memory area (work area) that temporarily stores programs or data read by the CPU 260a.

The I/O port 260d is connected to the gate valves 1330, 1350, 1490, the lifting mechanism unit 36, the wafer boat elevator 40, the heater 100, the heating unit 321, a pressure regulator (not shown), a vacuum pump (not shown), and the like. In addition, it may be connected to the transfer machine 30 as a vacuum transfer robot, the atmospheric transfer robot 1220, the transfer chamber 1300, the gas supply unit (mass flow controller MFC (not shown), valves (not shown)), and the like. In addition, the term "connection" in this description also includes the meaning that each part is connected by a physical cable, but also includes the meaning that the signal (electronic data) of each part can be directly or indirectly transmitted/received. For example, a device for relaying signals, or a device for converting or calculating signals may be installed between each section.

The CPU 260a is configured to read and execute the control program from the memory device 260c, and read the process recipe from the memory device 260c in conjunction with the input of operation instructions from the controller 260. In addition, the CPU 260a is configured to control the opening and closing actions of the gate valves 1330, 1350, and 332, the lifting mechanism 36, the lifting action of the wafer elevator 40, the rotation action of the rotary drive unit 42, and the heating The power supply operation of the heater 100, the heating unit 321, the transfer machine 30 as a vacuum transfer robot, and the atmospheric transfer robot 1220. In addition, the gas supply unit (mass flow controller MFC (not shown), valve (not shown)) is also controlled, but the illustration is omitted.

Furthermore, the controller 260 is not limited to being configured as a dedicated computer, and may be configured as a general-purpose computer. For example, prepare an external memory device (such as magnetic tape, floppy disk or hard disk, etc., optical disk such as CD or DVD, etc.), magneto-optical disk such as MO, USB memory or semiconductor recording medium such as memory card ) 262, using the external memory device 262 to install the program to a general-purpose computer, etc., thereby forming the controller 260 of this embodiment. Furthermore, the means for supplying the program to the computer is not limited to the case of supplying via the external memory device 262. For example, communication means such as the Internet 263 (network or dedicated line) can also be used to provide programs without going through the external memory device 262. Furthermore, the storage device 260c or the external storage device 262 is configured as a recording medium readable by a computer. Hereinafter, these are also collectively referred to as recording media. Furthermore, when the term of the recording medium is used in this specification, it refers to the case that only includes the memory device 260c alone, the case that only includes the external memory device 262 alone, or the case of both.

(2) The first substrate processing step Next, as one of the steps of manufacturing a semiconductor device using the above-mentioned substrate processing apparatus, for an example of forming an insulating film on a substrate, for example, a silicon oxide (SiO) film as a silicon-containing film, refer to FIGS. 2, 3, 10, etc. Be explained. In addition, in the following description, the operations of the components constituting the substrate processing apparatus 101 are controlled by the controller 260.

Furthermore, the use of the term "substrate" in this manual is the same as the use of the term "wafer". In this case, just replace "substrate" with "wafer" in the above description.

Hereinafter, as one step of the semiconductor device manufacturing step, a flow example of a series of substrate processing steps including the film formation step S204 of film formation on the substrate 10 is shown.

[Pre-environment adjustment steps: S200] First, the heater 100 heats the inside of the processing chamber 115 or the wafer boat 200 to a predetermined temperature in the film forming step S204. At this time, it is performed in a state where the wafer boat 200 is arranged at the processing position shown in FIG. 2. After reaching the predetermined temperature, the inside of the processing chamber 115 is evacuated to the required pressure (vacuum degree) by the exhaust pipe 140 by a vacuum pump (not shown). In addition, the heating of the processing chamber 115 by the heater 100 or the exhaust of the processing chamber 115 is continued at least until the processing of the substrate 10 is completed.

In addition, the heating unit 321 may be turned on to perform preliminary heating so that the inside of the heating chamber 320 becomes a predetermined temperature.

[Board loading step: S201] Next, the board carrying-in step S201 is performed. The substrate carrying step is to perform at least the substrate mounting step S201a and the first substrate heating step S201b.

[Substrate placement step: S201a, first substrate heating step: S201b] Here, the substrate placing step S201a is performed in parallel with the first substrate heating step S201b.

[Substrate placement step: S201a] First, the substrate mounting step S201a will be described. A step of placing the substrate 10 on the wafer boat 200 and placing the wafer boat 200 on which the substrate 10 is placed in a processing chamber is performed. Specifically, from the state of FIG. 2, the substrate support portion 203 provided on the lowermost side of the wafer boat 200 is inserted into the transfer chamber 330. It is also referred to as a state in which one section (the substrate supporting portion 203 on which one substrate is placed) is inserted into the transfer chamber 330. At this time, most of the wafer boat 200 faces the heater 100 and is in a heated state. In this state, the substrate 10 is placed on the substrate support portion 203 of the wafer boat 200 by the transfer machine 30 through the substrate transfer port 331 of the transfer chamber 330. This step is repeated while lowering the substrate support portion 203 of the wafer boat 200 by one section (wafer boat lowering), and the substrate 10 is placed on the substrate support portions 203 of all stages of the wafer boat 200. Moreover, this action is performed by the wafer boat elevator 40 moving the support rod 160.

[First substrate heating step: S201b] Next, the first substrate heating step S201b will be described using FIG. 3. The first substrate heating step S201b is sequentially performed by the substrate 10 placed on the wafer boat 200 in the above-mentioned substrate placing step S201a. As shown in FIG. 3, the substrate 10 placed in the first section from below is heated by at least the heated wafer boat 200. In this manner, the step in which the substrate 10 is heated is referred to as a first substrate heating step S201b. In addition, at this time, in order to increase the temperature increase rate of the substrate 10 placed on the wafer boat 200, the heating unit 321 is set to the ON state in advance, and the substrate 10 is heated by the heating unit 321. The first substrate heating step S201b is continued until the substrate 10 is placed on the substrate supporting portion 203 of all stages of the wafer boat 200. In this step, the substrate 10 is heated to a temperature range of, for example, about 200 to 450°C.

Next, depending on the state where the substrate 10 is placed on the substrate support portion 203 of all the stages of the wafer boat 200, the support rod 160 is raised by the wafer boat elevator 40, and the wafer boat 200 is moved into the inside of the second reaction tube 120 (wafer boat 200). Loading) (state shown in Figure 2).

Moreover, when the wafer boat is loaded, the temperature on the lower side of the processing chamber 115 may be overshooted. At this time, the heater 100 may be configured as a block heater having blocks divided in the vertical direction, and the output of the heater of the lower block can be reduced from the output of the heaters of other blocks.

In addition, in the substrate replacement step S206a, the rotation of the wafer boat 200 is stopped. Since the rotation of the wafer boat 200 stops, in the rotation direction of the wafer boat 200 (the circumferential direction of the substrate 10), sometimes a temperature difference (temperature distribution) is formed in the rotation direction of the substrate 10 or the wafer boat 200 (circumferential direction). For example, the temperature of the part facing the substrate import port 331 may be lower than the temperature of other parts. In order to relieve this temperature difference, it is preferable to rotate the wafer boat 200 after placing the new substrate 10 on the substrate supporting portion 203 at the uppermost part of the wafer boat 200.

[Second substrate heating step: S202] Furthermore, before raising the wafer boat 200, the second substrate heating step S202 may be performed as shown by the broken line in FIG. 10. This step is performed when the temperature of the substrate 10 is slow, for example. In the second substrate heating step S202, in the state shown in FIG. 4, it is a step of making it stand by for a predetermined time and heating the substrate 10 to a predetermined temperature. For example, the substrate 10 is heated to a temperature range of approximately 200 to 450°C.

[Film forming step: S203] Next, the raw material gas is supplied to the inside of the second reaction tube 120 through the nozzle 130 by a gas supply system not shown, and passes through the upper gap 121 and the lower opening between the second reaction tube 120 and the first reaction tube 110 122. Exhaust to the outside through the exhaust pipe 140 by an exhaust pump (not shown).

By repeating several processing steps including the steps of supplying raw material gas to the inside of the second reaction tube 120 through the nozzle 130 and exhausting to the outside by an exhaust pump, the surface of the substrate 10 mounted on the wafer boat 200 Form a thin film of the desired thickness. For example, supply of aminosilane-based gas or oxygen-containing gas. As the aminosilane-based gas, for example, bisdiethylaminosilane (H ₂ Si(NEt ₂ ) ₂ , Bis (diethylamino)silane: BDEAS) gas. As the oxygen-containing gas, there are oxygen (O ₂ ) or ozone gas (O ₃ ), water (H ₂ O), nitrous oxide gas (N ₂ O), and the like.

[Environmental adjustment step: S204] After a thin film with a desired thickness is formed on the surface of the substrate 10, an environment adjustment step S204 is performed. N ₂ gas is supplied to the inside of the second reaction tube 120 via a nozzle 130 from a gas supply system not shown, and the exhaust pipe 140 is exhausted to the outside by an exhaust pump not shown, thereby removing the inside of the processing chamber 115 The inert gas is used for flushing, and the gas or by-products remaining in the processing chamber 115 are removed from the processing chamber 115.

[Decision Step: S205] Next, for the new substrate 10 on which the above-mentioned film forming step S203 has not been performed, a step S205 of determining whether or not to be repeated is performed. When it is an unprocessed substrate 10, the determination is YES (Y), and the substrate replacement step S206a and the first heating step S206b are performed. When there is no unprocessed substrate 10, it is determined as No (N), and the substrate unloading step S207 is performed.

[Substrate replacement step: S206a] After that, the wafer boat elevator 40 is driven to lower the support rod 160, and as shown in FIG. 3, the wafer boat 200 on which the substrate 10 with a thin film of a predetermined thickness is formed on the surface is transferred to the storage chamber 300.

When the wafer boat 200 on which the thin film-formed substrate (processed substrate) 10 is mounted is transferred to the chamber 180, in this embodiment, the wafer boat elevator 40 is driven to make the wafer boat 200 perform pitch transfer. A substrate 10 on which a thin film has been formed is taken out from the wafer boat 200 through the substrate transfer port 331 of the transfer chamber 330, and then a new substrate (unprocessed substrate) 10 is placed on the wafer boat 200.

The order of replacement of the substrate 10 is from top to bottom, from bottom to bottom, from near the middle of the wafer boat 200, etc., but the replacement order from the bottom of the wafer boat 200 can shorten the substrate 10 The heating time. Among them, the substrate 10 mounted on the top and bottom of the wafer boat 200 tends to have a higher temperature than the substrate 10 mounted near the middle of the wafer boat 200, so replacement may be started from the middle of the wafer boat 200 in order.

This action is performed until all the thin-film-formed substrates 10 mounted on the wafer boat 200 are replaced with new substrates 10. At this time, in order to increase the heating rate of the new substrate 10, the heating part 321 of the storage chamber 300 may be heated first, and the inside of the heating chamber 320 may be heated by infrared rays through the window 310. As a result, during the period from the lower end of the wafer boat 200 to the transfer chamber 330 and the start of substrate replacement, the lower part of the wafer boat 200 is heated by the heating part 321 installed on the outer periphery of the heating chamber 320 to suppress the temperature of the wafer boat 200 reduce.

In this way, by heating the inside of the heating chamber 320 by the heating part 321, as shown in FIG. 4, when the substrate 10 with the thin film formed on the wafer boat 200 is replaced with a new substrate 10, the wafer boat 200, and The substrate 10 remounted on the wafer boat 200 is heated inside the heating chamber 320, and the temperature rises.

When all the thin-film-formed substrates 10 mounted on the wafer boat 200 are replaced with new substrates 10, the wafer boat elevator 40 is driven to raise the wafer boat 200, and the wafer boat 200 is transferred from the storage chamber 300 to the second reaction tube 120 (FIG. 2 State shown).

In this state, the interiors of the storage chamber 300 and the processing chamber 115 are evacuated from the exhaust pipe 140 by a vacuum pump not shown, and the wafer boat is carried in from the storage chamber 300 to the processing chamber 115 in a vacuum state. Thereby, after the wafer boat 200 is carried into the processing chamber 115 from the storage chamber 300, the time for vacuuming the processing chamber is no longer required, and the overall processing time can be shortened.

In this way, by carrying in the wafer boat 200 of the processing chamber 115 from the storage chamber 300 in a vacuum state, the temperature of the processing chamber 115 can be suppressed from decreasing. In addition, it is possible to prevent the temperature of the substrate 10 from lowering during the period when the heated substrate 10 is moved from the heating chamber 320 to the processing chamber 115.

After the wafer boat 200 is loaded, the heater 100 is used to heat the substrate 10 to a desired temperature. At this time, since the wafer boat 200 and the substrate 10 have been heated in the transfer chamber 330, the time required for them to rise to the temperature required to start the film formation process can be moved in at room temperature compared to the time they are not heated in the transfer chamber 330. The situation to the inside of the processing chamber 115 is greatly shortened. Thereby, the substrate processing time can be shortened and the yield can be improved.

Here, since the replacement of the new substrate 10 of the wafer boat 200 is carried out in sequence from the bottom of the wafer boat 200, the residence time of the newly replaced substrate 10 inside the heating chamber 320 is different. There is a temperature difference between the substrate 10 mounted on the lower stage and the substrate 10 mounted on the uppermost stage of the wafer boat 200.

Furthermore, in the above-mentioned embodiment, an example was exemplified in which the wafer boat lift 40 was driven to move the wafer boat 200 in pitch, the substrate 10 on which the thin film was formed was taken out from the wafer boat 200, and a new substrate 10 was mounted on the wafer boat 200. However, it is also possible to take out a plurality of substrates 10 from the wafer boat 200 at the same time, and load a plurality of new substrates 10 on the wafer boat 200 at the same time. At this time, the wafer boat elevator 40 causes the wafer boat 200 to perform pitch transfer according to the components of the plurality of substrates 10.

In addition, a plurality of substrates 10 may be taken out from the wafer boat 200 at the same time, a plurality of new substrates 10 may be loaded on the wafer boat 200 at the same time, and all the substrates 10 before being reloaded on the wafer boat 200 may be heated.

Furthermore, when the wafer boat 200 is lowered by the wafer boat elevator 40 and the thin-film-formed substrate 10 mounted on the wafer boat 200 is replaced with the substrate 10, heating by the heater 100 of the substrate processing apparatus 101 can also be continued. Thereby, the temperature of the upper part of the wafer boat 200 can be prevented from lowering. After the new substrate 10 is replaced, the heating time of the substrate 10 on the upper part of the wafer boat 200 in the heating chamber 320 is short, which can eliminate the contact with the wafer boat 200 to a certain extent. The temperature difference between the lower substrate 10.

Furthermore, in the substrate replacement step S206a, the cover heater 152 may be continuously turned on, and the wafer boat is lowered and loaded. By continuously turning on the lid heater 152, it is possible to suppress a decrease in the temperature of the thermal insulation portion 150 or the substrate support portion 203 under the wafer boat 200.

[Board out step: S207] The substrate unloading step S207 is performed when there is no new substrate 10. The operation of the substrate unloading step S207 is configured such that the new substrate 10 is not placed in the substrate replacement step S206a. In this way, the substrate processing steps of this embodiment are performed.

According to this embodiment, compared to the case where the substrate 10 is not heated in the heating chamber 320, the heating chamber 320 heats the substrate 10, so that the substrate 10 loaded on the wafer boat 200 that is transferred from the transfer chamber 330 to the processing chamber 115 can be shortened. Heating time can increase the processing yield.

[Modification 1] In the first embodiment, an example in which a plurality of lamp heaters as the heating portion 321 are aligned and arranged in the longitudinal direction of the heating chamber 320 is illustrated. However, in this modification example, as shown in FIG. The lamp heaters 322 are arranged in plural along the outer circumference of the heating chamber 320 in the longitudinal direction of the heating chamber 320. The same symbols are added to the same constituent parts as in the first embodiment, and repeated description is omitted.

At this time, the position where the ring-shaped lamp heater 322 is arranged is matched to the pitch in the height direction of the substrate 10 mounted on the wafer boat 200 in the heating chamber 320, for each substrate 10 mounted on the wafer boat 200 Configure it. At this time, the position of the ring-shaped lamp heater 322 is arranged above the position of the corresponding substrate 10 (the placement surface of the wafer boat 200).

Furthermore, instead of the ring-shaped lamp heater 322, a plurality of rod-shaped lamp heaters can be arranged along the outer circumference of the heating chamber 320.

Furthermore, the output of a plurality of ring-shaped lamp heaters 322 arranged in the length direction of the heating chamber 320 along the outer circumference of the heating chamber 320 may be changed along the length direction of the heating chamber 320.

In this modification example, the same effect as in Example 1 can also be obtained. [Modification 2] As a second modification, as shown in FIG. 6, the heating chamber 320 is divided into a plurality of blocks, and the temperature at which each zone is heated is different. In the example shown in FIG. 6, an example in which the heating chamber 320 is divided into three blocks 323-1, 323-2, and 323-3 is illustrated.

In this way, the heating chamber 320 is divided into a plurality of blocks, and the temperature of the upper block 323-1 is set to be higher than the temperature of the lower block 323-3, thereby reducing the residence time in the heating chamber 320 The temperature between the substrate 10 mounted on the uppermost stage of the wafer boat 200 and the substrate 10 mounted on the lowermost stage caused by the difference.

According to this modification, the temperature difference between the top and bottom of the substrate 10 mounted on the wafer boat 200 can be reduced. Therefore, compared with the case of the first embodiment, the wafer boat 200 can be moved from the transfer chamber 330 to the processing chamber 115. The heating time of the mounted substrate 10 is further shortened, and the processing yield can be improved.

[Modification 3] As a third modification, there is a configuration as shown in FIG. 8. Fig. 8 is a configuration in which the height of the chamber 180 is reduced compared to the configurations in other figures. Specifically, when the wafer boat 200 is moved to the lower end of the storage chamber 300, the uppermost substrate support portion 203 of the wafer boat 200 faces the substrate import port 331. With this configuration, the stroke length in the upper and lower directions of the wafer boat 200 can be shortened, and the transport time of the wafer boat 200 (substrate 10) can be shortened.

In addition, the distance from the lower end of the chamber 180 to the heater 100 is configured to be short, so that the radiant heat from the heater 100 can easily reach the wafer boat 200 and the disc 201 at the upper end of the wafer boat 200 is heated. In addition, the opening on the lower side of the processing chamber 115 (between the reaction tube and the chamber 180) is more likely to be blocked by the circular plate 201 at the upper end of the wafer boat 200, which can suppress the temperature drop in the processing chamber 115. In addition, this structure can also be said that the height of the heating chamber 320 in the vertical direction is configured to include the length of a part of the substrate mounting area of the heat insulation portion 150 and the wafer boat 200.

The present invention has been specifically explained based on the embodiments above, but the present invention is not limited to the above-mentioned embodiments, and of course various modifications can be made without departing from the scope of the gist. For example, the above-mentioned embodiments are explained in detail in order to facilitate the understanding of the present invention, but they are not limited to those which must have all the configurations explained above. In addition, for a part of the configuration of each embodiment, other configurations may be added, deleted, or replaced.

For example, an example in which the heating unit 321 is provided on both sides of the storage chamber 300 in FIG. 2 is illustrated, but it is not limited to this structure, and it may be configured to be provided only on one side. In addition, it may be configured as a wall surrounding the storage chamber 300.

Furthermore, the inventors of the present application have conducted painstaking research and found that by configuring the substrate processing apparatus 101 as shown in FIG. 11, the heating rate of the substrate 10 can be increased. The difference between the substrate processing apparatus 101 shown in FIG. 11 and the substrate processing apparatus 101 shown in FIG. 2 is that a second heating unit 324 is provided in FIG. 11. The second heating part 324 is provided above the heating part 321 (also the first heating part 321). Preferably, the second heating part 324 is provided in the transfer chamber 330 and is opposed to the substrate transfer port 331. More preferably, the second heating portion 324 is provided in the substrate support portion 203 provided in the wafer boat 200, and when the substrate 10 is placed on the uppermost substrate support portion 203, the uppermost substrate 10 can be heated position.

The heat treatment using the second heating unit 324 will be described. The substrate 10 to be processed is placed on the wafer boat 200 while being heated by the first heating section 321, and after all the substrates 10 to be processed are placed on the wafer boat 200, the second heating section 324 is turned on. By activating (turning on) the second heating unit 324, the temperature increase rate of the substrate 10 finally placed on the wafer boat 200 is increased. The second heating part 324 may be configured to continue to be in an ON state until the lower end of the wafer boat 200 passes at least, and may also heat the wafer boat 200.

With this configuration, the unprocessed substrate 10 placed on the uppermost substrate supporting portion 203 can be heated immediately after being placed on the substrate supporting portion 203. The heating time of the entire substrate 10 placed on the wafer boat 200 is determined by the temperature rise of the last substrate 10 placed on the uppermost part of the substrate support part 203. Therefore, by applying the second heating part to the uppermost substrate 10 Heating at 324 can start heating immediately after being placed on the substrate supporting portion 203, so that the heating time of the entire substrate 10 placed on the wafer boat 200 can be shortened. That is, the processing time of the substrate 10 is shortened, and the manufacturing yield of semiconductor devices can be improved.

In addition, after placing the unprocessed substrate 10 on the uppermost substrate support portion 203, by turning on the second heating portion 324, the substrate carrying port 331, the gate valve 332, and the O-shaped set around the gate valve 332 can be suppressed. Heating of at least any one of the ring etc.

Furthermore, an example in which the first heating section 321 and the second heating section 324 are composed of separate heating elements is illustrated here, but the structure is not limited to this configuration, and the same heating element may be used to form the first heating section 321 and the second heating section. 2 Heating part 324. In other words, it is configured such that the upper end side of the first heating portion 321 extends on the transfer chamber 330 side. Here, the so-called heating system refers to lamp heaters, resistance heaters, and the like.

The present invention includes at least the following embodiments. [Supplementary Note 1] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to the substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; and a spacer is provided on the substrate support. [Supplementary Note 2] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; the length of the transfer chamber in the vertical direction relative to the surface of the substrate is configured to be longer than the surface of the heating chamber relative to the substrate The vertical length is short. [Supplementary Note 3] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; the length of the heating chamber in the direction perpendicular to the surface of the substrate is the length of the substrate placement area of the substrate support . [Supplementary Note 4] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; and communicating with the above Below the transfer chamber, a heating chamber that heats the substrate support and the substrate; and has a control part, which is configured to control the heating part of the heating chamber, and the wafer boat lifting mechanism to lower the wafer boat and process The replacement of the latter plural substrates and the plural substrates before processing are performed in parallel, and the placed and processed substrates are sequentially heated in the heating chamber. [Supplementary Note 5] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber that heats the substrate support and the substrate; and has a control part, which is configured to control the heating part of the heating chamber, and the wafer boat lifting mechanism to lower the wafer boat and process The replacement of the subsequent plural substrates and the plural substrates before processing are performed in parallel, and all the placed substrates before processing are heated. [Additional Note 6] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; it continues the heating by the heating chamber and performs the lowering of the wafer boat and the wafer boat device. [Supplementary Note 7] A substrate processing apparatus comprising: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to the substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; it continues the heating by the heater on the side of the processing chamber and performs the lowering of the wafer boat and the wafer boat device. [Supplement 8] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; and communicating with the above Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; the transfer chamber, the heating chamber, and the reaction chamber are connected to each other and constitute a vacuum environment. [Additional Note 9] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to the substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; before pre-heating (before unloading of the wafer boat), the lamp is turned on to heat the heating chamber. [Supplementary Note 10] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber is a heating chamber that heats the substrate support and the substrate; the heating chamber is provided with a SiC member to form the heating chamber like a hot wall. [Supplementary Note 11] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; when the wafer boat is unloaded, the control of the heater in the lower part of the reaction chamber is switched. [Supplementary Note 12] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber connected to the lower part of the processing chamber to transfer the substrate to the substrate support arranged in the processing chamber; Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; when the wafer boat is unloaded, the heater at the lower part of the reaction chamber is controlled to fix or reduce the power of the heater at the lower part of the reaction chamber. [Supplement 13] A substrate processing apparatus having: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; and communicating with the above Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; after the replacement of the plurality of substrates is completed, the wafer boat starts to rotate. [Supplementary Note 14] A substrate processing apparatus comprising: a processing chamber for processing substrates; a transfer chamber communicating with the processing chamber and transferring the substrate to a substrate support arranged in the processing chamber; and communicating with the above Below the transfer chamber, a heating chamber for heating the substrate support and the substrate; in order to suppress deviations in teaching, the heating chamber is cooled.

1: Vertical substrate processing equipment (substrate processing system) 10: substrate 30: Transfer machine 31: Clamp 32: arm 33: Rotation axis 34: Base 35: flange 36: Lifting mechanism department 40: Crystal Boat Lift 42: Rotation drive 60: cover 61: IO port 62: cabin 100: heater 101: Substrate processing device 110: The first reaction tube 111: Pumping part 115: processing room 120: second reaction tube 121: gap 122: opening 130: nozzle 140: exhaust pipe 150: Insulation Department 151: Hole 152: Lid heater 160: support rod 170: Vacuum transfer chamber 180: Chamber 190: cooling flow path 200: Crystal Boat 201: round plate 202: Pillar 203: substrate support 260: Controller 260a: CPU 260b: RAM 260c: memory device 260d: I/O port 260e: internal bus 261: I/O device 262: External memory device 263: Internet 300: storage room 301: Inert gas supply pipe 310: window 320: heating chamber 321: Heating Department 330: Transfer Room 331: board import entrance 332: Gate Valve 1200: Atmospheric transfer room 1210: cabin opener 1220: Atmospheric transport robot 1230: Lift 1240: Linear actuator 1250: cleaning unit 1270: frame 1280: Board removal entrance 1290: Board removal entrance 1300: transfer room 1310: frame 1320: Substrate mounting table 1330: gate valve 1340: Board removal entrance 1350: gate valve 1490: gate valve

FIG. 1 is a block diagram of the schematic configuration of the substrate processing apparatus of Example 1. FIG. 2 is a schematic cross-sectional view of the processing chamber and the wafer boat storage chamber in the substrate processing apparatus of Example 1, showing a state in which the wafer boat loaded with the substrate is carried into the processing chamber. 3 is a schematic cross-sectional view of the processing chamber and the wafer boat storage chamber in the substrate processing apparatus of Example 1, showing the state when the wafer boat on which the substrate is mounted is carried out from the processing chamber. 4 is a schematic cross-sectional view of the processing chamber and the wafer boat storage chamber in the substrate processing apparatus of Example 1, showing a state where the wafer boat loaded with the substrate is carried into the wafer boat storage chamber. 5 is a schematic cross-sectional view of the wafer boat storage chamber in the substrate processing apparatus of Modification 1, showing a state in which a ring-shaped heater is arranged around the heating chamber. 6 is a schematic cross-sectional view of the wafer boat storage chamber in the substrate processing apparatus of Modification 2 in which the heaters around the heating chamber are divided into three blocks. Fig. 7 is a schematic cross-sectional view showing another embodiment of the heating chamber of the substrate processing apparatus according to the embodiment of the present invention. Fig. 8 is a schematic cross-sectional view showing another embodiment of the heating chamber of the substrate processing apparatus according to the embodiment of the present invention. Fig. 9 is a block diagram showing a schematic configuration of a control unit for operating each unit of the substrate processing apparatus according to the embodiment of the present invention. FIG. 10 is a flowchart showing the manufacturing steps of a semiconductor device according to an embodiment of the present invention. Fig. 11 is a schematic cross-sectional view showing another embodiment of the heating chamber of the substrate processing apparatus according to the embodiment of the present invention.

1: Vertical substrate processing equipment (substrate processing system)

10: substrate

30: Transfer machine

31: Clamp

32: arm

33: Rotation axis

34: Base

35: flange

36: Lifting mechanism department

40: Crystal Boat Lift

42: Rotation drive

60: cover

61: IO port

62: cabin

100: heater

101: Substrate processing device

110: The first reaction tube

111: Pumping part

115: processing room

120: second reaction tube

121: gap

122: opening

130: nozzle

140: exhaust pipe

150: Insulation Department

152: Lid heater

160: support rod

170: Vacuum transfer chamber

180: Chamber

190: cooling flow path

200: Crystal Boat

201: round plate

202: Pillar

203: substrate support

260: Controller

301: Inert gas supply pipe

310: window

320: heating chamber

321: Heating Department

330: Transfer Room

331: board import entrance

332: Gate Valve

1200: Atmospheric transfer room

1210: cabin opener

1220: Atmospheric transport robot

1230: Lift

1240: Linear actuator

1250: cleaning unit

1270: frame

1280: Board removal entrance

1290: Board removal entrance

1300: transfer room

1310: frame

1320: Substrate mounting table

1330: gate valve

1340: Board removal entrance

1350: gate valve

Claims (18)

A substrate processing device, which has: Processing room for processing substrates; Connected to the lower part of the processing chamber to transfer the substrate to the transfer chamber of the substrate support arranged in the processing chamber; and A heating chamber communicating with the lower part of the transfer chamber and heating the substrate support and the substrate. The substrate processing apparatus according to claim 1, including: a first heating unit that is provided in the heating chamber and heats the substrate. The substrate processing apparatus of claim 1, wherein the length of the transfer chamber in the direction perpendicular to the surface of the substrate is configured to be shorter than the length of the heating chamber in the direction perpendicular to the surface of the substrate. The substrate processing apparatus according to claim 1, wherein the length of the heating chamber in the direction perpendicular to the surface of the substrate is configured as the length of the area of the substrate supporter where the substrate is placed. Such as the substrate processing apparatus of claim 1, which has a lifting mechanism for lifting the above-mentioned substrate support; and has: The control unit is configured to control the above-mentioned lifting mechanism to alternately lower the above-mentioned substrate support and replace the processed substrate with the pre-processed substrate, so that the placed pre-processed substrate is sequentially placed in the heating chamber Heat up. Such as the substrate processing apparatus of claim 2, which has an elevating mechanism for raising and lowering the above-mentioned substrate support; and has: The control unit is configured to control the first heating unit and the lifting mechanism so as to alternately lower the substrate support and replace the processed substrate with the pre-processed substrate, so that the placed pre-processed substrate The heating is performed in the above heating chamber in sequence. Such as the substrate processing apparatus of claim 1, which has a lifting mechanism for lifting the above-mentioned substrate support; and has: The control unit is configured to control the above-mentioned lifting mechanism to alternately perform the lowering of the above-mentioned substrate support, and the replacement of the plurality of substrates after processing and the plurality of substrates before the processing, so that the placed before the plural processing All the substrates are heated. Such as the substrate processing apparatus of claim 2, which has an elevating mechanism for raising and lowering the above-mentioned substrate support; and has: The control unit is configured to control the above-mentioned lifting mechanism to alternately perform the lowering of the above-mentioned substrate support, and the replacement of the plurality of substrates after processing and the plurality of substrates before the processing, so that the placed before the plural processing All the substrates are heated. Such as the substrate processing device of claim 1, which has: A lifting mechanism for lifting the above-mentioned substrate support; and Heating the above-mentioned processing chamber, with heaters of plural blocks; It also has a control unit, which is configured to control the lifting mechanism and the heater, so that when the substrate support is lowered, the heater in the plurality of blocks of the heater is switched to the heater in the lower block control. The substrate processing apparatus according to claim 9, wherein the control unit is configured to control the heater so that when the substrate support is lowered, the heater is located in the lower part of the plurality of blocks. The power of the heater in the block is fixed or reduced. Such as the substrate processing apparatus of claim 2, which has a rotating mechanism for rotating the above-mentioned substrate support; and has: The control unit is configured to control the rotation mechanism so as to start the rotation of the substrate support after the replacement of the substrate with the substrate support is completed. The substrate processing apparatus according to claim 2, wherein the transfer chamber has a second heating unit that heats the upper side of the substrate support. The substrate processing apparatus according to claim 12 includes a control unit configured to be controlled to turn on the first heating unit and the second heating unit after the replacement of the substrate with the substrate support is completed. The substrate processing apparatus according to claim 1, wherein the transfer chamber, the heating chamber, and the processing chamber are in communication with each other, and have an exhaust part that evacuates each space. A substrate processing apparatus according to claim 1, which has a SiC member provided on the wall of the heating chamber. The substrate processing apparatus according to claim 1, wherein the heating chamber has a cooling part. A method of manufacturing a semiconductor device has: (a) The step of transferring the substrate to the substrate support arranged in the above-mentioned processing chamber in the transfer chamber connected below the processing chamber; (b) The step of heating the substrate in a heating chamber connected below the transfer chamber; (c) After the above (b), the step of moving the substrate to the processing chamber and performing processing. A recording medium that records a computer program for the substrate processing device to perform the following procedures: (a) The procedure of transferring the substrate to the substrate support arranged in the above-mentioned processing chamber in the transfer chamber connected to the lower part of the processing chamber; (b) Procedures for heating the substrate in the heating chamber connected to the lower part of the transfer chamber; (c) After the above (b), the above-mentioned substrate is moved to the above-mentioned processing chamber and processed.

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