TW202017741A - Laminate and target material having blackened films with low reflectance - Google Patents

Abstract

The object of the present invention is to provide a laminate having blackened films with low reflectance. The present invention provides a laminate 10, which comprises: a substrate 18; a metal layer 32 laminated on the substrate 18 for forming electrodes and/or wiring; and, a blackened film 35 laminated on the surface of metal layer 32 opposite to the substrate 18 and/or a blackened film 34 laminated between the metal layer 32 and the substrate 18. The blackened films 34, 35 contain nitride of titanium alloy represented by (Ti1-xMox)1-yNy and unavoidable dopant, where x and y represent the atomic ratio, respectively, and satisfy 0.03 ≤ x ≤ 0.28 and 0.40 ≤ y ≤ 0.60.

Description

Laminates and targets

The present invention relates to a laminate including a blackened film that suppresses reflection of a metal layer and a target for forming a blackened film.

The liquid crystal panel has a color filter substrate, a TFT (Thin Film Transistor, thin film transistor) array substrate, and a liquid crystal layer sandwiched by these two substrates. Regarding the electrodes formed on the TFT array substrate, in addition to transparent ITO (Indium Tin Oxide) electrodes, very thin metal electrodes are still used. In the case of a metal electrode, since the metal wire is opaque and has a metallic luster, light from the outside comes into contact with the metal wire and is reflected, and this reflected light has a problem that the visibility of the display portion is lowered.

As a countermeasure, in the liquid crystal panel, a structure in which a black matrix is arranged directly above the metal electrode and shields the reflected light from the metal electrode is adopted. However, in this case, it is difficult to narrow the width of the black matrix that divides the color filters of R (red), G (green), and B (blue) into a lattice shape, and it is difficult to improve the color filter. The aperture ratio and other panel performance improvements.

On the other hand, as other means to suppress the reflected light from the metal electrode, there have been various proposals on the metal layer forming the metal electrode to form a blackened film that can suppress the reflection to a low level (for example, refer to the following patent documents 1). These blackening films have been confirmed to have a certain effect of suppressing reflection in the metal layer, but in recent years, blackening films with lower reflectance have been further required.

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2015-69573

The present invention is based on the above circumstances, and an object of the present invention is to provide a laminate having a blackened film with a low reflectance and a target material suitable for forming a blackened film with a low reflectance.

The laminate of the present invention is characterized by having at least:

Substrate

A metal layer deposited on the substrate to form electrodes and/or wiring; and

A blackened film deposited on the surface of the metal layer opposite to the substrate, and/or between the metal layer and the substrate;

The blackened film contains nitrides of titanium alloys represented by (Ti _1-x Mo _x ) _1-y N _y and unavoidable impurities, x and y represent atomic ratios, respectively, and satisfy 0.03≦x≦0.28, 0.40≦y≦0.60.

As described above, when the laminate of the present invention constitutes a laminate including a base material and a metal layer forming electrodes and/or wirings, it is on the surface of the metal layer opposite to the base material (that is, with the base material as the bottom Side, when the metal layer is the upper side, above the metal layer), and/or at least one place between the metal layer and the substrate, the layer is formed of a nitride of a titanium alloy within a predetermined composition range Blackening film.

According to the present invention, when a blackened film composed of a nitride of titanium alloy is formed on the area layer above the metal layer, the metal layer The reflection of light incident on the material side is suppressed to be low.

On the other hand, when a blackened film is formed between the metal layer and the substrate, when the laminate is arranged with the substrate on the upper side and the metal layer on the lower side, the metal layer can be placed on the substrate side The reflection of light incident toward the metal layer side is suppressed to be low, which can ensure good visibility.

The blackened film of the present invention is a nitride containing Ti and Mo as metal components. In the formula (Ti _1-x Mo _x ) _1-y N _{y of the} prescribed composition, x represents the atomic ratio of Mo in the metal component, and 1-x represents the atomic ratio of Ti in the metal component. In addition, y represents the atomic ratio of N in the blackened film.

The blackened film containing Ti and Mo as metal components has excellent heat resistance, so it remains colorless and can be maintained even when heated to more than 300°C (eg, 370°C for 10 minutes under vacuum) as in the TFT manufacturing process Established reflectance reduction effect.

In the present invention, the atomic ratio x of Mo in the metal component of the blackened film is set to 0.03≦x≦0.28. This is because when the x value is small and less than 0.03, it is difficult to pattern by wet etching and the manufacturability is deteriorated. On the other hand, when the value of x is large and exceeds 0.28, the reflectance becomes higher than 25%, and the effect of reducing the reflectance becomes smaller. Therefore, in the present invention, the range of x is set to 0.03≦x≦0.28, which can obtain a reflectance reduction effect while ensuring manufacturability.

Here, in order to further ensure manufacturability and obtain a reflectance reduction effect, a preferable x range is 0.08≦x≦0.25, and a more preferable range is 0.10≦x≦0.20.

In addition, the effect of reducing the reflectance also depends on the value of the atomic ratio y of N in the blackened film. Therefore, in the present invention, the range of y is set to 0.40≦y≦0.60. Preferably it is 0.40≦y≦0.50.

In addition, the blackening film system may contain unavoidable elements in addition to the above elements Free from impurities. For example, oxygen (O) can also be contained as less than 3at% as an unavoidable impurity.

In addition, in the present invention, a blackened film may be formed of an oxynitride containing Ti and Mo as metal components. At this time, the blackened film contains the oxynitride of titanium alloy represented by (Ti _1-x Mo _x ) _1-yz N _y O _z and unavoidable impurities, x, y and z represent the atomic ratio, and It is structured to satisfy 0.03≦x≦0.28, 0.10≦y≦0.60, 0.03≦z≦0.47. It is preferably 0.07≦x≦0.16, 0.10≦y≦0.15, and 0.10≦z≦0.15.

In the formula (Ti _1-x Mo _x ) _1-yz N _y O _{z which} specifies the composition of the blackened film, x represents the atomic ratio of Mo in the metal component, and 1-x represents the atom of Ti in the metal component ratio. In addition, y represents the atomic ratio of N in the blackened film, and z represents the atomic ratio of O in the blackened film.

By setting the blackened film as oxynitride, the effect of reducing the reflectance can be further improved. However, when the atomic ratio of O in the blackened film is excessively increased, the effect of reducing the reflectance is impaired. Therefore, in the present invention, the range of z is set to 0.03≦z≦0.47.

In addition, the target for forming a blackened film of the present invention is characterized by containing Mo 3 to 28 at%, preferably 7 to 16 at%, and the remaining part contains Ti and unavoidable impurities. By using the target material of the titanium alloy thus specified, a black film with a low reflectance can be easily formed by reactive sputtering.

According to the present invention as described above, it is possible to provide a laminate having a blackened film with a low reflectance and a target material suitable for forming a blackened film with a low reflectance.

10, 50, 50A, 60, 60A

14‧‧‧Interlayer insulation

16‧‧‧oxide conductive layer

18, 52‧‧‧ substrate

20‧‧‧Gate electrode layer

22‧‧‧Gate insulation

24‧‧‧Semiconductor layer

26‧‧‧Source electrode layer

28‧‧‧Drain electrode layer

29‧‧‧recess

30‧‧‧Metal electrode layer

30a‧‧‧Layered film

32‧‧‧Metal layer

32a‧‧‧Second conductive film

34、34a‧‧‧The first blackening film

35, 35a‧‧‧Second blackening film

36‧‧‧Connecting hole

38‧‧‧Anti-corrosion layer

41‧‧‧Source area

42‧‧‧ Drainage area

43‧‧‧Channel area

54‧‧‧Metal layer

54D‧‧‧electrode

56‧‧‧Blackening film

S1, S2‧‧‧‧fine wire

FIG. 1 is a diagram showing a laminate according to an embodiment of the present invention.

2(A) to (C) are explanatory diagrams showing the manufacturing process of the same laminate.

3(A) to (C) are explanatory diagrams showing the manufacturing procedure following FIG. 2.

4(A) and (B) are explanatory diagrams showing the manufacturing procedure following FIG. 3.

5(A) and (B) are explanatory diagrams showing the manufacturing procedure following FIG. 4.

6(A) and (B) are diagrams showing laminates according to other embodiments of the present invention.

7 is a graph showing the relationship between the atomic ratio x of Mo in the blackened film and the reflectance.

FIG. 8 is a diagram showing the structure of a laminate used for reflectance evaluation.

Next, the embodiments of the present invention will be described in detail.

In FIG. 1, 10 is a laminate having a function as a thin film transistor (hereinafter referred to as "TFT"), which includes: a gate electrode layer 20 formed on a substrate 18; and a gate insulation covering the gate electrode layer 20 Layer 22; a semiconductor layer 24 configured to overlap with the gate electrode layer 20 via the gate insulating layer 22; a source electrode layer 26 and a drain electrode layer 28 joined to the semiconductor layer 24. In addition, the source electrode layer 26 and the drain electrode layer 28 may be collectively referred to as a metal electrode layer 30.

The substrate 18 is made of a transparent base material. In addition to glass substrates such as soda lime glass and alkali-free glass, resin substrates such as polyethylene terephthalate (PET) can also be used. From the viewpoint of workability, the thickness of the substrate 18 is preferably 300 μm to 1 mm.

The gate electrode layer 20 can be composed of a low-resistance metal material such as Al or Cu. However, Al alone has problems such as poor heat resistance or easy corrosion, so it can also be formed in combination with other heat-resistant conductive materials.

The gate insulating layer 22 may be a single layer or two or more layers, or a conventional general user, such as a silicon oxide film (SiOx film), a silicon nitride film (SiNx film), etc., may be used.

The semiconductor layer 24 may be made of In-Ga-Zn oxide (also described as IGZO) Consisting of oxide semiconductors. The In-Ga-Zn-based oxide means an oxide having In, Ga, and Zn as main components, regardless of the ratio of In, Ga, and Zn. In addition, metal elements other than In, Ga, and Zn may be contained.

In addition, the semiconductor layer 24 is not limited to an oxide semiconductor, and for example, amorphous silicon (also referred to as a-Si) may be used.

The source electrode layer 26 and the drain electrode layer 28 are respectively bonded to the semiconductor layer 24. In detail, a recess 29 is provided between the source electrode layer 26 and the drain electrode layer 28, and the source electrode layer 26 and the drain electrode layer 28 are separated from each other by the recess 29, and are respectively joined to the semiconductor Layer 24.

The source electrode layer 26 and the drain electrode layer 28 form a layered structure including: a metal layer 32 composed of Al, Cu, or an alloy containing these; a surface provided on the semiconductor layer 24 side of the metal layer 32 The first blackening film 34; and the second blackening film 35 provided on the surface of the metal layer 32 opposite to the semiconductor layer 24.

In order to achieve low resistance, the metal layer 32 is preferably made of Al alone. Generally, Cu is used as the electrode material system in addition to Al. Both of these Al and Cu can be processed by wet etching, but Cu cannot be processed by dry etching, so Al has high versatility. In terms of cost, Al is cheaper than 1/3 of Cu.

When the metal layer 32 is composed of Al alone, film formation can be performed by non-reactive sputtering using a target of pure Al. In addition, the metal layer 32 may be composed of an Al alloy having an Al content of 90 at% or more, or may be formed in combination with a heat-resistant conductive material. The thickness of the metal layer 32 is preferably 10 nm to 1 μm.

The first blackening film 34 and the second blackening film 35 cover the lower and upper surfaces of the metal layer 32 for the purpose of suppressing light reflection on the surface of the metal layer 32. The first blackened film 34 and the second blackened film 35 are nitrides of titanium alloys represented by (Ti _1-x Mo _x ) _1-y N _y . x and y represent the atomic ratio, and satisfy 0.03≦x≦0.28, 0.40≦y≦0.60. The first blackening film 34 and the second blackening film 35 use a target composed of a titanium alloy with a predetermined composition. Specifically, it contains Mo 3~28at%, and the remaining part is made of Ti and unavoidable impurities. The formed target material can be formed by reactive sputtering in a mixed gas environment of inert gas such as Ar and nitrogen gas.

The composition of the first blackening film 34 and the second blackening film 35 may be the same or different from each other. If the composition is the same, a common target can be used.

In addition, the thicknesses of the first blackening film 34 and the second blackening film 35 are preferably 15 to 200 nm.

The interlayer insulating layer 14 is arranged in such a manner as to cover the source electrode layer 26 and the drain electrode layer 28, and in the recess 29 between the source electrode layer 26 and the drain electrode layer 28, it depends on the channel region 43 of the semiconductor layer 24 Configuration by way of connection. The interlayer insulating layer 14 is similar to the gate insulating layer 22, and a silicon oxide film (SiOx film), a silicon nitride film (SiNx film), or the like can be used.

The oxide conductive layer 16 is composed of ITO, ZnO, SnO ₂ , IZO, etc., and is disposed on the interlayer insulating layer 14. When the layered body of this example functions as a TFT array substrate constituting a liquid crystal panel, the oxide conductive layer 16 constitutes a pixel electrode in a liquid crystal display section (not shown). The oxide conductive layer 16 is electrically connected to the drain electrode layer 28 through the connection hole 36 formed in the interlayer insulating layer 14, and the TFT is turned on and off to start the application of voltage to the oxide conductive layer 16 ,End.

In the laminated body 10 configured in this manner, the source electrode layer 26 and the drain electrode layer 28 are composed of the metal layer 32 and the blackened films 34 and 35 formed by laminating the metal layer 32, so metal can be suppressed Layer 32 reflects light from the outside.

Next, the manufacturing process of this laminate 10 will be described.

First, on the substrate 18, a first conductive film is formed by a vacuum thin film forming method such as sputtering or vapor deposition, and the first conductive film is patterned to form Al and the like as shown in FIG. 2(A).之 Gate electrode layer 20.

If the gate electrode layer 20 is formed by patterning the first conductive film, the surface of the substrate 18 is exposed except for the portion where the gate electrode layer 20 is located. As shown in FIG. 2(B), a gate insulating layer 22 of SiO ₂ , SiNx, or the like is formed on the surfaces of the substrate 18 and the gate electrode layer 20.

Next, as shown in FIG. 2(C), a semiconductor thin film is formed on the gate insulating layer 22, and then patterned to form a semiconductor layer 24 composed of the patterned semiconductor thin film. For example, an oxide semiconductor layer composed of an In-Ga-Zn oxide containing In, Ga, and Zn in a predetermined ratio is formed.

Next, as shown in FIGS. 3(A), (B), and (C), the surface of the gate insulating layer 22 exposed on the surface of the semiconductor layer 24 and outside the portion where the semiconductor layer 24 is located 1 The blackening film 34a, the second conductive film 32a, and the second blackening film 35a are laminated in the order of film.

The first blackened film 34a is a layered product prepared up to the state shown in FIG. 2(C), using a titanium alloy target of a predetermined composition, and reactive sputtering by using a mixed gas containing a nitrogen gas as a sputtering gas While forming.

Next, using a target material containing Al as a main component, by using non-reactive sputtering using a gas that is non-reactive to the target as a sputtering gas, as shown in FIG. 3(B), the first blackening A second conductive film 32a is formed on the surface of the film 34a.

Next, using a target composed of a titanium alloy of a predetermined composition, by reactive sputtering using a mixed gas of a nitrogen-containing gas as a sputtering gas, as shown in FIG. 3(C) As shown, a second blackened film 35a is formed on the surface of the second conductive film 32a. In this way, the build-up film 30a including the first blackening film 34a, the second conductive film 32a, and the second blackening film 35a is formed.

Thereafter, as shown in FIG. 4(A), a resist layer 38 is formed on the non-removed portion of the build-up film 30a, and the build-up body containing the build-up film 30a is immersed in the etchant in this state, thereby immersing the build-up film 30a The part that is not covered by the resist layer 38 is partially removed. Thereafter, when the resist layer 38 is removed, as shown in FIG. 4(B), the source electrode layer 26 and the drain electrode layer having the first blackening film 34, the metal layer 32, and the second blackening film 35 are formed 28.

In this way, the first blackening film 34 and the second blackening film 35 of this example can be patterned together with the metal layer 32 by conventional wet etching or dry etching.

In FIG. 4(B), between the source region 41 and the drain region 42 of the semiconductor layer 24 is a channel region 43, and the gate electrode layer 20 is located opposite to the channel region 43 by sandwiching the gate insulating layer 22 therebetween. In this state, the TFT is formed by the semiconductor layer 24, the gate insulating layer 22, and the electrode layers 20, 26, and 28 of the gate, source, and drain.

Next, as shown in FIG. 5(A), an interlayer insulating layer 14 containing SiNx, SiO ₂ or the like is formed. At the same time, a connection hole 36 (see FIG. 1) is formed at a predetermined position of the interlayer insulating layer 14. Thereafter, as shown in FIG. 5(B), a third conductive film made of ITO or the like is formed on the surface of the interlayer insulating layer 14 and then patterned to form an oxide conductive layer 16.

The structure and manufacturing method of the layered body 10 according to an embodiment of the present invention have been described above, but the structure and manufacturing method of the layered body 10 can be appropriately changed. For example, in the above-mentioned laminated body 10, a blackened film is provided on the source/drain electrodes 26 and 28, but a blackened film may be formed on and under the gate electrode 20 shown in FIG. Also, the blackened film may be formed only on the upper side of the gate electrode 20, the source and drain electrodes 26, 28, or may be formed only on the lower side of the gate electrode 20, the source and drain electrodes 26, 28 Blackening film.

In addition, in the above embodiment, the first blackening film 34 and the second blackening film 35 are made of a titanium alloy nitride, but these blackening films 34 and 35 may also be made of (Ti _1-x Mo _x ) _{1- yz} N _y O _z is composed of oxynitride of titanium alloy. The x, y, and z systems respectively represent atomic ratios, and satisfy 0.03≦x≦0.28, 0.10≦y≦0.60, 0.03≦z≦0.47. Such a nitrogen oxide uses a target material containing a titanium alloy of a predetermined composition, and can be formed by reactive sputtering in a mixed gas environment containing a nitrogen gas and an oxygen gas.

Fig. 6 shows a laminate according to another embodiment of the present invention.

In FIG. 6(A), 50A represents an example of a laminate used as a touch panel sensor. In the same figure, 52 is a transparent substrate. On one side of the substrate 52 (the upper side in the figure), the metal layer 54 formed by the electrode covers the entirety of the substrate 52 and is laminated in a film shape. Then, a blackened film 56 is formed on the surface of the metal layer 54 opposite to the substrate 52, that is, the upper surface in the figure. The blackened film 56 also covers the entirety of the metal layer 54 and is formed into a film shape.

The blackened film 56 in this example is a titanium alloy nitride represented by (Ti _1-x Mo _x ) _1-y N _y . Here, x and y represent the atomic ratio, and satisfy 0.03≦x≦0.28, 0.40≦y≦0.60. Also, the blackened film 56 may be composed of an oxynitride of a titanium alloy shown by (Ti _1-x Mo _x ) _1-yz N _y O _z . Here, x, y, and z represent the atomic ratio, and satisfy 0.03≦x≦0.28, 0.10≦y≦0.60, 0.03≦z≦0.47.

The laminate 50A is actually processed and used as a requirement of the touch panel sensor. The 50 series represents the laminate after its processing.

In the laminated body 50 after processing, the excess portion of the film-like metal layer 54 in the laminated body 50A before processing is removed, and only a majority of the ultrafine wires S1 remain as the metal layer 54 and these remaining ultrafine wires S1 are formed The electrodes 54D in a stripe pattern are formed parallel to each other.

The blackened film 56 is also removed of excess parts, and only the upper part of the figure covering the extremely thin line S1 becomes the extremely fine line S2 and remains. These have the effect of reducing the reflection of the extremely fine line on the light incident from the upper side of the figure .

In addition, the laminates 50A and 50 of FIG. 6(A) in this embodiment are included in the concept of the laminate of the present invention.

In addition, the laminates 60A and 60 shown in FIG. 6(B) are other forms of the laminate of this embodiment. In the laminates 60A and 60, a blackened film 56 is laminated between the metal layer 54 and the transparent substrate 52. In this way, the light incident upward from the lower side can be suppressed from being reflected downward by the electrode 54D (metal layer 54).

[Example 1]

Next, embodiments of the present invention will be described in detail below.

In this Example 1, as shown in Table 1 below, the Mo atomic ratio x in the blackened film shown by (Ti _1-x Mo _x ) _1-y N _{y was} changed, and various laminates were manufactured in the following manner , And the reflectivity and etching properties are measured and evaluated according to the following methods.

(Fabrication of blackened film/metal film/blackened film/substrate laminate)

Using a glass substrate of 100 mm×100 mm×1.1 mm as a transparent substrate, first reactive sputtering is performed to form a first blackened film on the substrate. The reactive sputtering system uses a sputtering target containing a TiMo alloy with a different Mo ratio, the degree of vacuum is set to 5×10 ^-4 to 5×10 ^-5 Pa, and the rate of introducing nitrogen gas into the chamber is 80% or more For the mixed gas (the remaining part is Ar gas and unavoidable impurities), the sputtering pressure is set to 0.1 to 1.5 Pa, and the electric power is set to 100 to 500W. Thereby, a blackened film with a thickness of 100 nm is formed.

Next, non-reactive sputtering is performed to form a metal film containing Cu on the blackened film. The non-reactive sputtering for forming a metal film is carried out by introducing Ar gas (inert gas) into the chamber with a vacuum degree of 5×10 ⁻⁴ to 5×10 ⁻⁵ Pa. The sputtering pressure is set to 0.1 to 1.5 Pa, and the power system is set to 100 to 500W. This forms a Cu-containing metal film with a thickness of 200 nm.

Next, reactive sputtering is performed to form a second blackened film on the metal film. The film forming conditions are the same as the first blackened film.

In this way, a structure in which the first blackening film, the metal film, and the second blackening film are sequentially stacked on the transparent substrate, that is, the second blackening film/metal film/first blackening film shown in FIG. 8 /Laminate of substrate.

[Table 1]

(Evaluation of reflectivity)

Using the layered product of the second blackened film/metal film/first blackened film/base material produced as described above, the reflectance was measured in accordance with JIS K 7105. In detail, the reflectance per 1 nm wavelength is measured for visible light (wavelength 400-780 nm) using an ultraviolet-visible spectrophotometer, and the average value is calculated. The reflectance is measured as shown by the arrow in Figure 8. The reflected light when viewed from the metal film side toward the substrate side, that is, the reflected light when the measurement light enters the substrate side from the metal film side, was evaluated according to the following evaluation criteria. The results are shown in Table 1.

○: The reflectivity is less than 25%

×: Reflectance is 25% or more

(Evaluation of wet etching)

In the wet etchability evaluation, a 5 cm square sample was cut from the laminate of the blackened film/substrate before forming the metal film, and this sample was immersed in Pure Etch TE, an etching solution made by Lin Chunyao Industry Co., Ltd. The time until the blackened film on the substrate was completely dissolved, the etching rate (nm/min) was obtained, and the evaluation was performed according to the following evaluation criteria. The results are shown in Table 1.

○: Etching rate is above 70nm/min

×: The etching rate is less than 70nm/min

In the results of Table 1, the lamination system of No. 1 does not contain Mo, and the blackened film is composed of TiN. The evaluation of the reflectance of the lamination system of No. 1 and the evaluation of the wet etching property are both ×.

On the other hand, the laminates of No. 6 and No. 7 containing Mo 32at% or more in the blackened film were evaluated as ○ for wet etching, but the reflectance was as high as over 25%, and the reflectance was evaluated as × .

On the other hand, the laminates No. 2 to No. 5 provided with the blackened film of the composition prescribed by the present invention have good results in both reflectivity and wet etching. In addition, FIG. 7 shows the relationship between the Mo atomic ratio x in the blackened film and the reflectance.

In addition, as a reference in Table 1, it also shows the evaluation of dry wet etching. The blackened films shown in Table 1 can be dry etched.

[Example 2]

Using a titanium alloy of Ti _0.92 Mo _0.08 as the target for the blackening film, a second blackening film/metal film/first blackening film/substrate laminate was produced in the same procedure as in Example 1 above. Here, as shown in Table 2, the nitrogen gas amount in the mixed gas at the time of forming the blackened film was changed to produce a laminate, the composition of the blackened film was investigated, and the reflectance was measured. The results are shown in Table 2.

[Table 2]

According to the results in Table 2, it is known that in order to achieve the target reflectance of less than 25%, it is necessary to make N in the blackened film contain at least 40 at%. In this example, by setting the amount of nitrogen gas in the mixed gas at the time of film formation to 80% or more, N in the blackened film can be made 40 at% or more.

[Example 3]

Using Ti alone or a titanium alloy target as the target for the blackening film, a second blackened film/metal film/first blackened film/substrate laminate was produced in the same procedure as in Example 1 above. Here, as shown in Tables 3 and 4, the ratio of the amount of nitrogen gas to the amount of oxygen gas in the mixed gas at the time of forming the blackened film was changed to produce a laminate, the composition of the blackened film was investigated, and the reflectance was measured . In addition, the wet-etchability and dry-etchability were also evaluated together. The results are shown in Table 3 and Table 4.

Furthermore, the description of Ti-4Mo in Table 3 indicates that the target composition is Ti _0.96 Mo _0.04 , and the description of Ti-8Mo indicates that the target composition is Ti _0.92 Mo _0.08 .

[table 3]

[Table 4]

According to the results of Table 3 and Table 4, when using a target containing only Ti (refer to No. 21, 22) and when using a target with a high Mo ratio (Ti-32Mo) (refer to No. 57-62), there is no Reach the target (reflectivity less than 25%).

On the other hand, if we focus on the laminates made using common targets (for example, refer to No. 23 to No. 29 in Table 3), the reflectance decreases as the O content in the blackened film increases, and it is confirmed The effect caused by the inclusion of O in the blackened film. Among them, when it is contained in an amount exceeding an appropriate amount, the reflectance becomes higher. It can be seen that in order to achieve the target reflectance of less than 25%, it is effective to set O to 47 at% or less (and N to 10 to 60 at%).

The embodiments and examples of the present invention have been described in detail above, but this is only an example. For example, the layered product of the present invention can also be used in a display device having an organic EL other than a liquid crystal panel or a touch panel. The present invention can be implemented according to various modifications without departing from its scope.

This case is based on the Japanese patent application 2018-164810 filed on September 3, 2018 and the Japanese patent application 2019-117759 filed on June 25, 2019, and the contents thereof are incorporated herein by reference.

10‧‧‧Layered body

14‧‧‧Interlayer insulation

16‧‧‧oxide conductive layer

18‧‧‧ Base material

20‧‧‧Gate electrode layer

22‧‧‧Gate insulation

24‧‧‧Semiconductor layer

26(30)‧‧‧Source electrode layer

28(30)‧‧‧Drain electrode layer

29‧‧‧recess

32‧‧‧Metal layer

34‧‧‧The first blackening film

35‧‧‧Second blackening film

36‧‧‧Connecting hole

41‧‧‧Source area

42‧‧‧ Drainage area

43‧‧‧Channel area

Claims (3)

A laminate, characterized by having at least: Substrate A metal layer deposited on the substrate to form electrodes and/or wiring; and A blackened film deposited on the surface of the metal layer opposite to the substrate, and/or between the metal layer and the substrate; The blackened film contains nitrides of titanium alloys represented by (Ti _1-x Mo _x ) _1-y N _y and unavoidable impurities, x and y represent atomic ratios, respectively, and satisfy 0.03≦x≦0.28, 0.40≦y≦0.60. A laminate, characterized by having at least: Substrate A metal layer deposited on the substrate to form electrodes and/or wiring; and A blackened film deposited on the surface of the metal layer opposite to the substrate, and/or between the metal layer and the substrate; The blackened film contains the oxynitride of titanium alloy represented by (Ti _1-x Mo _x ) _1-yz N _y O _z and unavoidable impurities, x, y and z represent the atomic ratio, and satisfy 0.03 ≦x≦0.28, 0.10≦y≦0.60, 0.03≦z≦0.47. A target material used to form the blackened film in claim 1 or 2, characterized by containing Mo 3~28at%, and the remaining part contains Ti and unavoidable impurities.

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