TW201917815A - Method of manufacturing electrostatic chuck plate - Google Patents
Method of manufacturing electrostatic chuck plate Download PDFInfo
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- TW201917815A TW201917815A TW107119942A TW107119942A TW201917815A TW 201917815 A TW201917815 A TW 201917815A TW 107119942 A TW107119942 A TW 107119942A TW 107119942 A TW107119942 A TW 107119942A TW 201917815 A TW201917815 A TW 201917815A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本發明是有關被使用在保持板狀的被加工物等時的靜電吸盤板的製造方法。The present invention relates to a method for manufacturing an electrostatic chuck plate when used to hold a plate-like workpiece or the like.
以切削裝置或研削裝置、雷射加工裝置等來加工半導體晶圓或光裝置晶圓、封裝基板等時,對於該等板狀的被加工物貼附黏著膠帶或硬質基板等的保護構件為一般。藉此,可由加工或搬送等時施加的衝擊來保護被加工物。When processing semiconductor wafers, optical device wafers, package substrates, etc. with a cutting device, grinding device, laser processing device, etc., it is common to attach protective members such as adhesive tapes or rigid substrates to these plate-like workpieces. . Thereby, a to-be-processed object can be protected by the impact applied during processing, conveyance, etc.
上述的保護構件,通常藉由持有某程度的黏著力的黏著劑來貼附於被加工物。因此,例如,有無法容易從加工後的被加工物剝離保護構件的情形。並且,在使用無法再使用的一次性的黏著膠帶等時,被加工物的加工所要的成本也容易變高。The above-mentioned protective member is usually attached to a workpiece by an adhesive having a certain degree of adhesion. Therefore, for example, there is a case where the protective member cannot be easily peeled from the processed object. In addition, when a disposable adhesive tape or the like that is no longer usable is used, the cost required for processing the object to be processed tends to increase.
於是,近年來,利用靜電來吸附、保持被加工物的靜電吸盤板的開發日益進展(例如參照專利文獻1)。在此靜電吸盤板中,例如,藉由將用以使靜電的吸附力產生的電極形成梳齒狀,即使在停止對電極的給電之後也被維持強的吸附力。 [先前技術文獻] [專利文獻]Therefore, in recent years, development of an electrostatic chuck plate that uses static electricity to adsorb and hold a workpiece has been progressing (for example, refer to Patent Document 1). In this electrostatic chuck plate, for example, by forming a comb-tooth shape of an electrode for generating an electrostatic adsorption force, a strong adsorption force is maintained even after the supply of electricity to the electrode is stopped. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本特開2016-51836號公報[Patent Document 1] Japanese Patent Laid-Open No. 2016-51836
(發明所欲解決的課題)(Problems to be solved by the invention)
代表上述的梳齒狀的電極之靜電吸盤板的電極是大多藉由濕式蝕刻來形成。但,由於此濕式蝕刻需要配合電極的圖案之遮罩,因此有容易花成本的問題。為此,謀求可用更低的成本來形成電極之靜電吸盤板的製造方法。The electrodes of the electrostatic chuck plate, which represent the comb-shaped electrodes described above, are often formed by wet etching. However, since this wet etching requires a mask matching the pattern of the electrode, there is a problem that it is easy to cost. Therefore, a manufacturing method of an electrostatic chuck plate capable of forming an electrode at a lower cost has been sought.
本發明是有鑑於如此的問題點而研發者,其目的是在於提供一種可用比以往低的成本來形成電極之靜電吸盤板的製造方法。 (用以解決課題的手段)The present invention has been developed by the present invention in view of such problems, and an object thereof is to provide a method for manufacturing an electrostatic chuck plate that can form electrodes at a lower cost than before. (Means for solving problems)
若根據本發明之一形態,則提供一種靜電吸盤板的製造方法,係以靜電的力來吸附被加工物而保持之靜電吸盤板的製造方法,其係具備: 導電體膜形成步驟,其係於基底基板之由絕緣體所成的絕緣面側設置含金屬氧化物的導電體膜;及 電極形成步驟,其係該導電體膜形成步驟之後,以對於該基底基板具有透過性的波長的雷射束來剝蝕加工該導電體膜,在該基底基板的該絕緣面側形成正負的電極。According to one aspect of the present invention, there is provided a method for manufacturing an electrostatic chuck plate, which is a method for manufacturing an electrostatic chuck plate that is held by an electrostatic force to adsorb a workpiece, and includes: (1) a conductive film forming step, A conductive film containing a metal oxide is provided on the insulating surface side of the base substrate made of an insulator; and an electrode forming step is a laser having a wavelength of transmissivity to the base substrate after the conductive film forming step. Bundle to abrade the conductive film, and form positive and negative electrodes on the insulating surface side of the base substrate.
在上述的本發明之一形態中,該基底基板,係以玻璃所形成,該雷射束的波長為500nm以上為理想。In one aspect of the present invention described above, the base substrate is made of glass, and the wavelength of the laser beam is preferably 500 nm or more.
若根據本發明的別的一形態,則提供一種靜電吸盤板的製造方法,係以靜電的力來吸附被加工物而保持之靜電吸盤板的製造方法,其特徵為具備: 樹脂薄板準備步驟,其係準備在第1面側設有含金屬氧化物的導電體膜的樹脂薄板; 電極形成步驟,其係該樹脂薄板準備步驟之後,以對於該樹脂薄板具有透過性的波長的雷射束來剝蝕加工該導電體膜,在該樹脂薄板的第1面側形成正負的電極;及 電極移設步驟,其係該電極形成步驟之後,將該電極貼附於基底基板之由絕緣體所成的絕緣面側,從該電極剝離該樹脂薄板,藉此將正負的電極移設至該基底基板的該絕緣面側。According to another aspect of the present invention, there is provided a manufacturing method of an electrostatic chuck plate, which is a manufacturing method of an electrostatic chuck plate that is held by an electrostatic force to adsorb and hold a workpiece, and is characterized by having: a resin sheet preparation step, It consists of a resin sheet provided with a metal oxide-containing conductive film on the first surface side; a electrode forming step, which is after the resin sheet preparation step, using a laser beam having a wavelength that is transparent to the resin sheet. The conductive film is subjected to ablation processing to form positive and negative electrodes on the first surface side of the resin sheet; and an electrode displacement step, which is a step of attaching the electrodes to the insulating surface of the base substrate made of an insulator after the electrode forming step. Side, the resin sheet is peeled off from the electrode, whereby positive and negative electrodes are moved to the insulating surface side of the base substrate.
在上述的本發明的別的一形態中,該樹脂薄板,係於可視域透明的樹脂薄板,該雷射束的波長為1000nm以上為理想。 [發明的效果]In another aspect of the present invention described above, the resin sheet is connected to a transparent resin sheet having a visible range, and the wavelength of the laser beam is preferably 1000 nm or more. [Effect of the invention]
在本發明之一形態的靜電吸盤板的製造方法,及本發明的別的一形態的靜電吸盤板的製造方法中,由於以雷射束來剝蝕加工導電體膜,形成正負的電極,因此相較於使用容易花成本的濕式蝕刻等的方法的情況,可用低的成本來形成正負的電極。In the method for manufacturing an electrostatic chuck plate according to one aspect of the present invention and the method for manufacturing an electrostatic chuck plate according to another aspect of the present invention, the conductive film is etched and processed with a laser beam to form positive and negative electrodes, so the phase The positive and negative electrodes can be formed at a lower cost than when a method such as wet etching, which is easy to cost, is used.
參照附圖來說明有關本發明之一形態的實施形態。本實施形態的靜電吸盤板的製造方法是包含導電體膜形成步驟(參照圖1(A))及電極形成步驟(參照圖1(B),圖1(C)及圖2)。An embodiment according to an aspect of the present invention will be described with reference to the drawings. The manufacturing method of the electrostatic chuck plate of this embodiment includes a conductive film formation step (see FIG. 1 (A)) and an electrode formation step (see FIG. 1 (B), FIG. 1 (C), and FIG. 2).
在導電體膜形成步驟中,在至少第1面由絕緣體所成的基底基板的第1面側設置含金屬氧化物的導電體膜。在電極形成步驟中,以對於此基底基板具有透過性的波長的雷射束來剝蝕加工導電體膜,在基底基板的第1面側形成正負的電極。以下,詳述有關本實施形態的晶圓的加工方法。In the conductor film forming step, a conductor film containing a metal oxide is provided on a first surface side of a base substrate made of an insulator on at least a first surface. In the electrode forming step, the conductive film is etched and processed with a laser beam having a wavelength transparent to the base substrate, and positive and negative electrodes are formed on the first surface side of the base substrate. Hereinafter, a method for processing a wafer according to this embodiment will be described in detail.
在本實施形態的靜電吸盤板的製造方法中,首先,進行將含金屬氧化物的導電體膜設於基底基板的導電體膜形成步驟。圖1(A)是模式性地表示在基底基板1的第1面(絕緣面)1a側形成有導電體膜3的狀態的剖面圖。In the method for manufacturing an electrostatic chuck plate according to this embodiment, first, a conductive film forming step of forming a conductive film containing a metal oxide on a base substrate is performed. FIG. 1A is a cross-sectional view schematically showing a state where a conductive film 3 is formed on the first surface (insulating surface) 1 a side of the base substrate 1.
如圖1(A)所示般,基底基板1是例如使用對於可視域的光(波長:360nm~830nm)透明的鈉玻璃、硼矽酸玻璃、石英玻璃等的玻璃材來形成圓盤狀,具有大概平坦的第1面1a及第2面1b。亦即,此基底基板1的第1面1a及第2面1b是以絕緣體來構成。As shown in FIG. 1 (A), the base substrate 1 is formed into a disc shape using glass materials such as soda glass, borosilicate glass, and quartz glass that are transparent to light in the visible region (wavelength: 360 nm to 830 nm). The first surface 1a and the second surface 1b are substantially flat. That is, the first surface 1a and the second surface 1b of the base substrate 1 are configured by an insulator.
基底基板1的直徑是最好例如與吸附的對象的被加工物11(參照圖5等)的直徑同程度或以上。並且,基底基板1的厚度,代表性是1mm~30mm程度。但,基底基板1的材質、形狀、構造、大小、厚度等無限制。The diameter of the base substrate 1 is preferably equal to or greater than the diameter of the object 11 (see FIG. 5 and the like) to be adsorbed. The thickness of the base substrate 1 is typically about 1 mm to 30 mm. However, the material, shape, structure, size, thickness, etc. of the base substrate 1 are not limited.
例如,亦可使用以樹脂或陶瓷等的材料所成的基底基板1。並且,基底基板1是只要至少第1面1a為以絕緣體所構成即可。因此,例如,亦可以絕緣體來被覆以半導體或導體等所成的基板,作為基底基板1使用。For example, a base substrate 1 made of a material such as resin or ceramics may be used. In addition, the base substrate 1 only needs to be composed of an insulator at least on the first surface 1a. Therefore, for example, a substrate made of a semiconductor, a conductor, or the like may be coated with an insulator and used as the base substrate 1.
本實施形態的導電體膜形成步驟是在此基底基板1的第1面1a側全體以濺射等的方法來形成含金屬氧化物的導電體膜3。金屬氧化物是最好使用例如氧化銦錫(Indium Tin Oxide:ITO)等對於可視域的光透明的材料。藉此,由於導電體膜3在可視域形成透明,因此例如在使用可視域的雷射束的雷射加工等時,可使用本實施形態的靜電吸盤板。導電體膜3的厚度,代表性地是1μm~100μm程度。The conductor film forming step of the present embodiment is to form a metal oxide-containing conductor film 3 on the entire first surface 1a side of the base substrate 1 by a method such as sputtering. The metal oxide is preferably a material that is transparent to light in the visible region, such as indium tin oxide (ITO). Accordingly, since the conductive film 3 is transparent in the visible region, the electrostatic chuck plate of the present embodiment can be used, for example, in laser processing using a laser beam in the visible region. The thickness of the conductor film 3 is typically about 1 μm to 100 μm.
但,導電體膜3的材質、形狀、大小、厚度、形成方法等,並無特別加以限制,例如,亦可使用CVD、真空蒸鍍、塗佈等的方法來形成導電體膜3。又,亦可使用將被設在樹脂薄板上的導電體膜貼附於基底基板1的第1面1a側的方法來形成導電體膜3。此情況,例如,可使用日東電工股份公司製的透明導電性薄膜ELECRYSTA(註冊商標)等。However, the material, shape, size, thickness, formation method, and the like of the conductor film 3 are not particularly limited. For example, a method such as CVD, vacuum evaporation, and coating may be used to form the conductor film 3. The conductor film 3 may be formed by a method of attaching a conductor film provided on a resin sheet to the first surface 1 a side of the base substrate 1. In this case, for example, a transparent conductive film ELECRYSTA (registered trademark) made by Nitto Denko Corporation can be used.
在導電體膜形成步驟之後,進行電極形成步驟,其係以雷射束來剝蝕加工被設在基底基板1的第1面1a側的導電體膜3,形成正負的電極。圖1(B)是模式性地表示導電體膜3被剝蝕加工的樣子的剖面圖。電極形成步驟是例如使用圖1(B)所示的雷射加工裝置2來進行。After the conductor film forming step, an electrode forming step is performed, which uses laser beams to abrade the conductor film 3 provided on the first surface 1a side of the base substrate 1 to form positive and negative electrodes. FIG. 1 (B) is a cross-sectional view schematically showing a state where the conductor film 3 is subjected to an ablation process. The electrode formation step is performed using, for example, the laser processing apparatus 2 shown in FIG. 1 (B).
雷射加工裝置2是具備用以吸引、保持基底基板1的吸盤台4。吸盤台4是被連結至馬達等的旋轉驅動源(未圖示),繞著與鉛直方向大概平行的旋轉軸旋轉。並且,在吸盤台4的下方是設有移動機構(未圖示),吸盤台4是藉由此移動機構來移動於加工進給方向(第1水平方向)及分度進給方向(第2水平方向)。The laser processing apparatus 2 includes a chuck table 4 for sucking and holding the base substrate 1. The chuck table 4 is a rotation drive source (not shown) connected to a motor or the like, and rotates around a rotation axis substantially parallel to the vertical direction. A moving mechanism (not shown) is provided below the chuck table 4. The chuck table 4 is moved by the moving mechanism in the processing feed direction (first horizontal direction) and the index feed direction (second horizontal direction).
吸盤台4的上面的一部分是形成用以吸引、保持基底基板1的保持面4a。保持面4a是經由被形成於吸盤台4的內部的吸引路(未圖示)等來連接至吸引源(未圖示)。藉由使吸引源的負壓作用於保持面4a,基底基板1會被吸引、保持於吸盤台4。A part of the upper surface of the chuck table 4 forms a holding surface 4 a for attracting and holding the base substrate 1. The holding surface 4 a is connected to a suction source (not shown) via a suction path (not shown) or the like formed inside the chuck table 4. When the negative pressure of the suction source is applied to the holding surface 4 a, the base substrate 1 is sucked and held on the chuck table 4.
在吸盤台4的上方是配置有雷射照射單元6。雷射照射單元6是以雷射振盪器(未圖示)來將被脈衝振盪的雷射束6a照射、集光至預定的位置。雷射振盪器是被構成為脈衝振盪雷射束6a,該雷射束6a是對於基底基板1具有透過性,可剝蝕加工導電體膜3的波長。Above the chuck table 4 is a laser irradiation unit 6. The laser irradiation unit 6 uses a laser oscillator (not shown) to irradiate and collect light to a predetermined position by a pulsed laser beam 6a. The laser oscillator is configured as a pulsed laser beam 6 a having a wavelength that is transparent to the base substrate 1 and can be processed by etching the conductive film 3.
在電極形成步驟中,首先,將被照射雷射束6a的照射預定線(未圖示)設定於導電體膜3。此照射預定線是須被設定成將導電體膜3分離成2個以上的形狀。但,設定照射預定線的時機是可任意。至少,只要在對於導電體膜3照射雷射束6a之前設定有照射預定線即可。In the electrode formation step, first, a predetermined irradiation line (not shown) of the irradiated laser beam 6 a is set on the conductor film 3. The predetermined irradiation line has to be set in a shape that separates the conductive film 3 into two or more. However, the timing of setting a predetermined irradiation line is arbitrary. At least, the predetermined irradiation line may be set before the laser beam 6 a is irradiated to the conductor film 3.
其次,使基底基板1的第2面1b側接觸於吸盤台4的保持面4a,使吸引源的負壓作用。藉此,基底基板1是被設在第1面1a側的導電體膜3露出於上方的狀態下保持於吸盤台4。然後,使吸盤台4旋轉、移動,調整基底基板1與雷射照射單元6的位置關係。Next, the second surface 1b side of the base substrate 1 is brought into contact with the holding surface 4a of the chuck table 4 to apply a negative pressure from the suction source. Accordingly, the base substrate 1 is held on the chuck table 4 in a state where the conductive film 3 provided on the first surface 1a side is exposed above. Then, the chuck table 4 is rotated and moved to adjust the positional relationship between the base substrate 1 and the laser irradiation unit 6.
然後,以沿著照射預定線(未圖示)來照射雷射束6a的方式,一邊從雷射照射單元6朝向導電體膜3照射雷射束6a,一邊使吸盤台4移動。藉此,藉由剝蝕加工來除去導電體膜3的一部分,可形成沿著照射預定線的絕緣領域3a。Then, the chuck table 4 is moved while the laser beam 6a is irradiated from the laser irradiation unit 6 toward the conductor film 3 so as to irradiate the laser beam 6a along a predetermined irradiation line (not shown). Thereby, a part of the conductor film 3 is removed by an ablation process, and an insulating region 3a can be formed along a predetermined irradiation line.
另外,在本實施形態中,將對於基底基板1具有透過性的波長的雷射束6a照射至導電體膜3。更具體而言,例如,最好用0.44J/cm2 以上的條件來將波長為500nm以上的雷射束6a照射至導電體膜3。藉此,可一邊抑制基底基板1的變質,一邊除去導電體膜3的一部分來形成絕緣領域3a。In the present embodiment, a laser beam 6 a having a wavelength transparent to the base substrate 1 is irradiated onto the conductor film 3. More specifically, for example, it is preferable to irradiate the laser beam 6a having a wavelength of 500 nm or more to the conductor film 3 under a condition of 0.44 J / cm 2 or more. Thereby, a part of the conductor film 3 can be removed while suppressing the deterioration of the base substrate 1 to form the insulating region 3a.
一旦在照射預定線的全部形成有絕緣領域3a,則導電體膜3是藉由此絕緣領域3a來分離成正的電極圖案(正的電極)3b(參照圖1(C)等)及負的電極圖案(負的電極)3c(參照圖1(C)等)。亦即,在基底基板1的第1面1a側是形成有正的電極圖案3b及負的電極圖案3c。藉此,完成在基底基板1的第1面1a側具有正的電極圖案3b及負的電極圖案3c的靜電吸盤板5(參照圖1(C)等)。Once the insulation area 3a is formed on all the irradiation lines, the conductive film 3 is separated into a positive electrode pattern (positive electrode) 3b (see FIG. 1 (C) and the like) and a negative electrode by the insulation area 3a. Pattern (negative electrode) 3c (see FIG. 1 (C) and the like). That is, a positive electrode pattern 3b and a negative electrode pattern 3c are formed on the first surface 1a side of the base substrate 1. Thereby, the electrostatic chuck plate 5 (refer FIG. 1 (C) etc.) which has the positive electrode pattern 3b and the negative electrode pattern 3c on the 1st surface 1a side of the base substrate 1 is completed.
如上述般,在本實施形態中,由於只要沿著導電體膜3的照射預定線來照射雷射束6a即可,因此相較於需要遮罩的濕式蝕刻等的方法,容易縮短加工所要的時間。又,由於可不如濕式蝕刻等般形成遮罩,因此可壓低正的電極圖案3b及負的電極圖案3c的形成所花費的成本。As described above, in the present embodiment, since the laser beam 6a only needs to be irradiated along the predetermined irradiation line of the conductive film 3, it is easier to shorten the processing requirements than methods such as wet etching that requires a mask time. In addition, since a mask may not be formed like wet etching or the like, the cost of forming the positive electrode pattern 3b and the negative electrode pattern 3c can be reduced.
圖1(C)是模式性地表示靜電吸盤板5的構造的剖面圖,圖2是模式性地表示靜電吸盤板5的構造的平面圖。如圖1(C)及圖2所示般,正的電極圖案3b及負的電極圖案3c的形狀是例如可形成使正的電極與負的電極交錯排列而成的一對的梳齒狀。FIG. 1 (C) is a cross-sectional view schematically showing the structure of the electrostatic chuck plate 5, and FIG. 2 is a plan view schematically showing the structure of the electrostatic chuck plate 5. As shown in FIG. 1 (C) and FIG. 2, the shape of the positive electrode pattern 3b and the negative electrode pattern 3c is, for example, a pair of comb-toothed shapes in which a positive electrode and a negative electrode are arranged alternately.
在如此的梳齒狀的電極中,由於正的電極及負的電極會以高的密度所配置,因此例如作用於電極與被加工物11之間被稱為梯度(Gradient)力等的靜電的力也變強。亦即,可用強的力量來吸附、保持被加工物11。並且,在停止對正的電極及負的電極的給電之後,也可維持強的吸附力。In such a comb-shaped electrode, since the positive electrode and the negative electrode are arranged at a high density, for example, an electrostatic force called a gradient force acting between the electrode and the workpiece 11 is applied. The force also becomes stronger. That is, the workpiece 11 can be adsorbed and held by a strong force. In addition, even after the power supply to the positive electrode and the negative electrode is stopped, a strong adsorption force can be maintained.
但,正的電極圖案3b及負的電極圖案3c的形狀、大小等並無特別的限制。例如,亦可用曲線或圓等來構成正的電極圖案3b及負的電極圖案3c。另外,如圖2所示般,藉由設定成可一筆畫出形成絕緣領域3a的照射預定線之形狀,可更縮短加工所要的時間。However, the shape, size, and the like of the positive electrode pattern 3b and the negative electrode pattern 3c are not particularly limited. For example, a positive electrode pattern 3b and a negative electrode pattern 3c may be configured by a curve, a circle, or the like. In addition, as shown in FIG. 2, by setting the shape so that a predetermined irradiation line forming the insulating region 3 a can be drawn in one stroke, the time required for processing can be further shortened.
如此,在本實施形態的靜電吸盤板的製造方法中,由於以雷射束6a來剝蝕加工導電體膜3,形成正的電極圖案(正的電極)3b及負的電極圖案(負的電極)3c,因此相較於使用容易花費成本的濕式蝕刻等的方法的情況,可用低的成本來形成正的電極圖案3b及負的電極圖案3c。As described above, in the manufacturing method of the electrostatic chuck plate of the present embodiment, since the conductive film 3 is ablated and processed by the laser beam 6a, a positive electrode pattern (positive electrode) 3b and a negative electrode pattern (negative electrode) are formed. 3c. Therefore, the positive electrode pattern 3b and the negative electrode pattern 3c can be formed at a lower cost than when a method such as wet etching, which is easy to cost, is used.
如此被製造的靜電吸盤板5是編入至用以吸附、保持被加工物11的各種的裝置來使用。圖3是模式性地表示使用靜電吸盤板5的框單元12的構造的立體圖,圖4是模式性地表示使用靜電吸盤板5的框單元12的構造的剖面圖。The electrostatic chuck plate 5 manufactured in this manner is used by being incorporated into various devices for adsorbing and holding the workpiece 11. FIG. 3 is a perspective view schematically showing the structure of the frame unit 12 using the electrostatic chuck plate 5, and FIG. 4 is a cross-sectional view schematically showing the structure of the frame unit 12 using the electrostatic chuck plate 5.
如圖3及圖4所示般,框單元12是具備以鋁等的材料所成的環狀的框14。在框14的中央部分是形成有將此框14從第1面14a貫通至第2面14b的開口14c。開口14c的形狀是例如從第1面14a側(或第2面14b側)看大概圓形。另外,框14的材質、形狀、大小等並無特別的限制。As shown in FIGS. 3 and 4, the frame unit 12 is provided with a ring-shaped frame 14 made of a material such as aluminum. An opening 14c is formed in the central portion of the frame 14 to penetrate the frame 14 from the first surface 14a to the second surface 14b. The shape of the opening 14c is, for example, approximately circular when viewed from the first surface 14a side (or the second surface 14b side). In addition, the material, shape, size, and the like of the frame 14 are not particularly limited.
在框14的第2面14b是以聚乙烯(PE)或聚對苯二甲酸乙酯(PET)等的材料所成的薄膜狀的基底薄板16會被固定成為覆蓋開口14c。具體而言,圓形的基底薄板16的第1面16a側的外周部分會被貼附於框14的第2面14b。On the second surface 14b of the frame 14, a film-like base sheet 16 made of a material such as polyethylene (PE) or polyethylene terephthalate (PET) is fixed to cover the opening 14c. Specifically, the outer peripheral portion of the circular base sheet 16 on the first surface 16 a side is adhered to the second surface 14 b of the frame 14.
基底薄板16是例如具有可保護被加工物11的程度的柔軟性,及不阻礙後述的靜電的力的程度的絕緣性。但,基底薄板16的材質、形狀、厚度、大小等並無特別的限制。被加工物11是被保持於此基底薄板16的第1面16a側。另一方面,在基底薄板16的第2面16b側的中央部分是設有上述的靜電吸盤板5。The base sheet 16 has, for example, flexibility to the extent that the workpiece 11 can be protected, and insulation to the extent that it does not hinder the electrostatic force described later. However, the material, shape, thickness, size, and the like of the base sheet 16 are not particularly limited. The workpiece 11 is held on the first surface 16 a side of the base sheet 16. On the other hand, the above-mentioned electrostatic chuck plate 5 is provided at a central portion on the second surface 16b side of the base sheet 16.
靜電吸盤板5是例如藉由具有黏著力的覆蓋薄板18,在導電體膜3(正的電極圖案3b及負的電極圖案3c)側緊貼於基底薄板16的第2面16b側的形態下被固定。此情況,相較於使基底基板1的第2面1b側緊貼於基底薄板16的第2面16b側的情況,可使從導電體膜3產生的電場效率佳地作用於第1面16a側的被加工物11。The electrostatic chuck plate 5 is in a configuration in which the conductive film 3 (the positive electrode pattern 3b and the negative electrode pattern 3c) is in close contact with the second surface 16b side of the base sheet 16 via a cover sheet 18 having an adhesive force, for example. be fixed. In this case, compared to a case where the second surface 1b side of the base substrate 1 is in close contact with the second surface 16b side of the base sheet 16, the electric field generated from the conductor film 3 can be applied to the first surface 16a with high efficiency.边 的 制作 物 11。 Side 11 of the workpiece.
覆蓋薄板18是例如包含:以和基底薄板16同樣的材料所形成的圓形的基材薄板,及被設在基材薄板的一方的面的黏著劑層(糊層)。在此,覆蓋薄板18(基材薄板)的直徑是比靜電吸盤板5(基底基板1)的直徑更大。但,覆蓋薄板18的材質、形狀、厚度、大小、構造等並無特別的限制。The cover sheet 18 includes, for example, a circular base sheet formed of the same material as the base sheet 16 and an adhesive layer (paste layer) provided on one surface of the base sheet. Here, the diameter of the cover sheet 18 (base material sheet) is larger than the diameter of the electrostatic chuck plate 5 (base substrate 1). However, the material, shape, thickness, size, structure, and the like of the cover sheet 18 are not particularly limited.
在基底薄板16的第2面16b側是配置有:被連接至正的電極圖案3b的第1配線20a,及被連接至負的電極圖案3c的第2配線20b。如圖3所示般,在框14的第1面14a側是設有給電單元22,第1配線20a及第2配線20b是例如繞進框4而被連接至給電單元22。On the second surface 16 b side of the base sheet 16, first wirings 20 a connected to the positive electrode pattern 3 b and second wirings 20 b connected to the negative electrode pattern 3 c are arranged. As shown in FIG. 3, the power supply unit 22 is provided on the first surface 14 a side of the frame 14, and the first wiring 20 a and the second wiring 20 b are, for example, wound around the frame 4 and connected to the power supply unit 22.
給電單元22是具備:用以收容電池24的電池夾具22a,該電池24是被使用在對上述的正的電極圖案3b及負的電極圖案3c的給電。並且,在與電池夾具22a鄰接的位置是設有用以切換對正的電極圖案3a及負的電極圖案3b的給電及非給電的開關22b。The power supply unit 22 includes a battery holder 22 a for accommodating a battery 24 that is used to supply power to the positive electrode pattern 3 b and the negative electrode pattern 3 c described above. Further, a position adjacent to the battery holder 22a is provided with a switch 22b for switching between power supply and non-power supply of the positive electrode pattern 3a and the negative electrode pattern 3b.
例如,若使開關22b形成導通狀態(ON狀態),則被收容於電池夾具22a的電池24的電力會經由第1配線20a及第2配線20b來供給至正的電極圖案3b及負的電極圖案3c。另一方面,若使開關22b形成非導通狀態(OFF狀態),則對正的電極圖案3b及負的電極圖案3c的給電停止。For example, when the switch 22b is turned on (ON state), the power of the battery 24 accommodated in the battery holder 22a is supplied to the positive electrode pattern 3b and the negative electrode pattern through the first wiring 20a and the second wiring 20b. 3c. On the other hand, when the switch 22b is brought into a non-conductive state (OFF state), the power supply to the positive electrode pattern 3b and the negative electrode pattern 3c is stopped.
另外,在圖3及圖4中,將給電單元22配置於框14的第1面14a側,但給電單元22的配置等並無特別的限制。至少,此給電單元22是只要被配置於使用框單元12(亦即,吸附、保持被加工物11)時不妨礙的位置即可。例如,亦可在框14的開口14c內配置給電單元22。並且,電池24是亦可為鈕扣型電池(硬幣型電池)般的一次電池,或可藉由充電來重複使用的2次電池。In addition, in FIGS. 3 and 4, the power supply unit 22 is arranged on the first surface 14 a side of the frame 14, but the arrangement of the power supply unit 22 is not particularly limited. At least, the power supply unit 22 may be disposed at a position that does not interfere with the use of the frame unit 12 (that is, the object to be processed 11 is held and held). For example, the electric unit 22 may be arranged in the opening 14 c of the frame 14. The battery 24 is a primary battery such as a coin-type battery (coin-type battery) or a secondary battery that can be repeatedly used by charging.
圖5是模式性地表示使被加工物11吸附於框單元12的樣子的立體圖。被加工物11是例如以矽(Si)等的材料所成的圓盤狀的晶圓。此被加工物11的表面11a側是以被設定成格子狀的分割預定線(分割道)13來區劃成複數的領域,在各領域是形成有IC(Integrated Circuit)、MEMS (Micro Electro Mechanical Systems)等的裝置15。FIG. 5 is a perspective view schematically showing a state in which the workpiece 11 is adsorbed on the frame unit 12. The processed object 11 is, for example, a disc-shaped wafer made of a material such as silicon (Si). The surface 11a side of the processed object 11 is divided into a plurality of areas by predetermined division lines (division lanes) 13 set in a grid shape, and IC (Integrated Circuit), MEMS (Micro Electro Mechanical Systems) are formed in each area. ) 等 的 设备 15。 15 and other devices.
但,被加工物11的材質、形狀、構造、大小等無限制。亦可用框單元12來吸附、保持以其他的半導體、陶瓷、樹脂、金屬等的材料所成的被加工物11。同樣,裝置15的種類、數量、形狀、構造、大小、配置等也無限制。However, the material, shape, structure, size, and the like of the workpiece 11 are not limited. The frame unit 12 may also be used to adsorb and hold the workpiece 11 made of other materials such as semiconductors, ceramics, resins, and metals. Similarly, the type, number, shape, structure, size, arrangement, etc. of the device 15 are also not limited.
在使被加工物11吸附於框單元12時,首先,以被加工物11的背面11b側與基底薄板16的第1面16a側會接觸的方式,將被加工物11載於基底薄板16。更具體而言,將被加工物11載於基底薄板16之對應於靜電吸盤板5的領域(中央部分)。其次,使給電單元22的開關22b形成導通狀態,將電池24的電力供給至正的電極圖案3b及負的電極圖案3c。When attaching the workpiece 11 to the frame unit 12, first, the workpiece 11 is placed on the base sheet 16 so that the back surface 11 b side of the workpiece 11 and the first surface 16 a side of the base sheet 16 are in contact with each other. More specifically, a region (central portion) of the base plate 16 corresponding to the electrostatic chuck plate 5 is placed on the substrate 11. Next, the switch 22b of the power supply unit 22 is turned on, and the power of the battery 24 is supplied to the positive electrode pattern 3b and the negative electrode pattern 3c.
藉此,在正的電極圖案3b及負的電極圖案3c的周圍產生電場,其效果,靜電的力會作用於被加工物11與導電體膜3之間。藉由此靜電的力,被加工物11被吸附、保持於框單元12。另外,作用於被加工物11與導電體膜3之間的靜電的力是有庫倫力、Johnsen-Rahbeck力、梯度力等。Thereby, an electric field is generated around the positive electrode pattern 3b and the negative electrode pattern 3c. As a result, an electrostatic force acts on the object 11 and the conductor film 3. The object 11 is attracted and held on the frame unit 12 by the electrostatic force. In addition, the force acting on the static electricity between the workpiece 11 and the conductor film 3 includes a Coulomb force, a Johnsen-Rahbeck force, a gradient force, and the like.
另外,本發明是不限於上述實施形態等的記載,可實施各種變更。例如,上述實施形態是將含金屬氧化物的導電體膜3設於基底基板1之後,以雷射束6a來剝蝕加工此導電體膜3,但亦可用別的程序來製造靜電吸盤板5。The present invention is not limited to the description of the embodiments and the like, and various modifications can be made. For example, in the above-mentioned embodiment, after the conductive film 3 containing a metal oxide is provided on the base substrate 1, the conductive film 3 is etched and processed with a laser beam 6 a, but the electrostatic chuck plate 5 may be manufactured by another procedure.
圖6(A)是模式性地表示以變形例的靜電吸盤板的製造方法來剝蝕加工導電體膜3的樣子的剖面圖。在變形例的靜電吸盤板的製造方法中,首先,進行樹脂薄板準備步驟,其係準備設有含金屬氧化物的導電體膜3的樹脂薄板7。FIG. 6 (A) is a cross-sectional view schematically showing a state in which the conductive film 3 is ablated and processed by a method of manufacturing an electrostatic chuck plate according to a modification. In the manufacturing method of the electrostatic chuck plate of the modification, first, a resin sheet preparation step is performed, which prepares a resin sheet 7 provided with a metal oxide-containing conductive film 3.
樹脂薄板7是例如以對於可視域的光透明的聚對苯二甲酸乙酯(PET)等的樹脂材所形成,在其第1面7a側是設有含金屬氧化物的導電體膜3。作為附如此的導電體膜3的樹脂薄板7是例如可使用日東電工股份公司製的透明導電性薄膜ELECRYSTA(註冊商標)等。The resin sheet 7 is made of, for example, a resin material such as polyethylene terephthalate (PET) that is transparent to light in the visible range, and a metal oxide-containing conductive film 3 is provided on the first surface 7a side. As the resin sheet 7 with such a conductive film 3, for example, a transparent conductive film ELECRYSTA (registered trademark) made by Nitto Denko Corporation can be used.
在樹脂薄板準備步驟之後,進行電極形成步驟,其係以雷射束6a來剝蝕加工被設在樹脂薄板7的第1面7a側的導電體膜3,形成正負的電極。電極形成步驟是例如使用雷射加工裝置2來進行。在此變形例使用的雷射加工裝置2的構成的大部分是與在上述實施形態使用的雷射加工裝置2相同,但該雷射振盪器是被構成為脈衝振盪雷射束6a,該雷射束6a是對於樹脂薄板7具有透過性,可剝蝕加工導電體膜3的波長。After the resin sheet preparation step, an electrode forming step is performed, which uses a laser beam 6a to abrade the conductive film 3 provided on the first surface 7a side of the resin sheet 7 to form positive and negative electrodes. The electrode formation step is performed using, for example, the laser processing apparatus 2. Most of the configuration of the laser processing device 2 used in this modification is the same as that of the laser processing device 2 used in the above embodiment, but the laser oscillator is configured as a pulsed laser beam 6a, and the laser The beam 6 a has a wavelength which is transmissive to the resin sheet 7 and can abrade the conductor film 3.
在變形例的電極形成步驟中,首先,將被照射雷射束6a的照射預定線(未圖示)設定於導電體膜3。此照射預定線是須被設定成將導電體膜3分離成2個以上的形狀。但,設定照射預定線的時機是可任意。至少,只要在對於導電體膜3照射雷射束6a之前設定有照射預定線即可。In the electrode formation step of the modified example, first, a predetermined irradiation line (not shown) of the irradiated laser beam 6 a is set to the conductor film 3. The predetermined irradiation line has to be set in a shape that separates the conductive film 3 into two or more. However, the timing of setting a predetermined irradiation line is arbitrary. At least, the predetermined irradiation line may be set before the laser beam 6 a is irradiated to the conductor film 3.
其次,使樹脂薄板7的第2面7b側接觸於吸盤台4的保持面4a,使吸引源的負壓作用。藉此,樹脂薄板7是被設在第1面7a側的導電體膜3露出於上方的狀態下被保持於吸盤台4。其次,使吸盤台4旋轉、移動,調整樹脂薄板7與雷射照射單元6的位置關係。Next, the second surface 7b side of the resin sheet 7 is brought into contact with the holding surface 4a of the chuck table 4 to apply a negative pressure to the suction source. Accordingly, the resin sheet 7 is held on the chuck table 4 in a state where the conductive film 3 provided on the first surface 7a side is exposed above. Next, the chuck table 4 is rotated and moved to adjust the positional relationship between the resin sheet 7 and the laser irradiation unit 6.
然後,以沿著被設定於導電體膜3的照射預定線(未圖示)來照射雷射束6a的方式,一邊從雷射照射單元6朝向導電體膜3照射雷射束6a,一邊使吸盤台4移動。藉此,藉由剝蝕加工來除去導電體膜3的一部分,可形成沿著照射預定線的絕緣領域3a。Then, the laser beam 6a is irradiated from the laser irradiation unit 6 toward the conductor film 3 while the laser beam 6a is irradiated along a predetermined irradiation line (not shown) set on the conductor film 3. The chuck table 4 moves. Thereby, a part of the conductor film 3 is removed by an ablation process, and an insulating region 3a can be formed along a predetermined irradiation line.
另外,在此變形例中,將對於樹脂薄板7具有透過性的波長的雷射束6a照射至導電體膜3。更具體而言,例如,最好用0.44J/cm2 以上,未滿8.84J/cm2 的條件來將波長為1000nm以上的雷射束6a照射至導電體膜3。藉此,如使用紫外區(波長:未滿360nm)的雷射束的情況般,不使樹脂薄板7變質、損傷,可除去導電體膜3的一部分來形成絕緣領域3a。In this modification, a laser beam 6 a having a wavelength that is transparent to the resin sheet 7 is irradiated onto the conductor film 3. More specifically, for example, the conductive film 3 is preferably irradiated with a laser beam 6a having a wavelength of 1000 nm or more under conditions of 0.44 J / cm 2 or more and less than 8.84 J / cm 2 . With this, as in the case of using a laser beam in the ultraviolet region (wavelength: less than 360 nm), the resin sheet 7 is not deteriorated or damaged, and a part of the conductor film 3 can be removed to form the insulating region 3a.
一旦絕緣領域3a被形成於照射預定線的全體,則導電體膜3是藉由此絕緣領域3a來分離成正的電極圖案(正的電極)3b及負的電極圖案(負的電極)3c。亦即,在樹脂薄板7的第1面7a側形成有正的電極圖案3b及負的電極圖案3c。When the insulating region 3a is formed over the entire irradiation target line, the conductive film 3 is separated into a positive electrode pattern (positive electrode) 3b and a negative electrode pattern (negative electrode) 3c by the insulating region 3a. That is, a positive electrode pattern 3 b and a negative electrode pattern 3 c are formed on the first surface 7 a side of the resin sheet 7.
在電極形成步驟之後,進行電極移設步驟,其係將正的電極圖案3b及負的電極圖案3c移設至基底基板1的第1面(絕緣面)1a側。在此電極移設步驟中,例如,將樹脂薄板7上的正的電極圖案3b及負的電極圖案3c貼附於基底基板1的第1面1a側之後,剝離樹脂薄板7。After the electrode formation step, an electrode displacement step is performed, which involves moving the positive electrode pattern 3 b and the negative electrode pattern 3 c to the first surface (insulating surface) 1 a side of the base substrate 1. In this electrode displacement step, for example, after the positive electrode pattern 3 b and the negative electrode pattern 3 c on the resin sheet 7 are attached to the first surface 1 a side of the base substrate 1, the resin sheet 7 is peeled off.
圖6(B)是模式性地表示從以變形例的靜電吸盤板的製造方法來貼附於基底基板1的正的電極圖案3b及負的電極圖案3c剝離樹脂薄板7的樣子的剖面圖。如圖6(B)所示般,正的電極圖案3b及負的電極圖案3c是利用黏著劑9來貼附於基底基板1的第1面1a側。另外,基底基板1是可與在上述實施形態使用的基底基板1相同。FIG. 6 (B) is a cross-sectional view schematically showing a state in which the resin sheet 7 is peeled off from the positive electrode pattern 3 b and the negative electrode pattern 3 c attached to the base substrate 1 by the manufacturing method of the electrostatic chuck plate according to the modification. As shown in FIG. 6 (B), the positive electrode pattern 3 b and the negative electrode pattern 3 c are adhered to the first surface 1 a side of the base substrate 1 with an adhesive 9. The base substrate 1 is the same as the base substrate 1 used in the above-mentioned embodiment.
利用黏著劑9來將正的電極圖案3b及負的電極圖案3c貼附於基底基板1的第1面1a側之後,由此正的電極圖案3b及負的電極圖案3c來剝離樹脂薄板7。藉此,正的電極圖案3b及負的電極圖案3c會被移設至基底基板1的第1面1a側,完成靜電吸盤板5a。圖6(C)是模式性地表示以變形例的靜電吸盤板的製造方法來製造的靜電吸盤板的構造的剖面圖。After the positive electrode pattern 3 b and the negative electrode pattern 3 c are attached to the first surface 1 a side of the base substrate 1 by the adhesive 9, the resin sheet 7 is peeled by the positive electrode pattern 3 b and the negative electrode pattern 3 c. Thereby, the positive electrode pattern 3b and the negative electrode pattern 3c are transferred to the first surface 1a side of the base substrate 1, and the electrostatic chuck plate 5a is completed. 6 (C) is a cross-sectional view schematically showing a structure of an electrostatic chuck plate manufactured by a method of manufacturing an electrostatic chuck plate according to a modification.
如此,即使是變形例的靜電吸盤板的製造方法,也以雷射束6a來剝蝕加工導電體膜3,形成正的電極圖案(正的電極)3b及負的電極圖案(負的電極)3c,因此相較於使用容易花費成本的濕式蝕刻等的方法的情況,可用低的成本來形成正的電極圖案3b及負的電極圖案3c。As described above, even in the manufacturing method of the electrostatic chuck plate according to the modification, the conductive film 3 is ablated and processed by the laser beam 6a to form a positive electrode pattern (positive electrode) 3b and a negative electrode pattern (negative electrode) 3c. Therefore, the positive electrode pattern 3b and the negative electrode pattern 3c can be formed at a lower cost than in the case of using a method such as wet etching which is easy to cost.
其他,涉及上述實施形態或變形例等的構造、方法等是只要不脫離本發明的目的之範圍,便可適當變更實施。In addition, the structures, methods, and the like related to the above-mentioned embodiments, modifications, and the like can be appropriately changed and implemented without departing from the scope of the object of the present invention.
1‧‧‧基底基板1‧‧‧ base substrate
1a‧‧‧第1面(絕緣面)1a‧‧‧first side (insulating surface)
1b‧‧‧第2面1b‧‧‧side 2
3‧‧‧導電體膜3‧‧‧Conductor film
3a‧‧‧絕緣領域3a‧‧‧Insulation
3b‧‧‧正的電極圖案(正的電極)3b‧‧‧Positive electrode pattern (positive electrode)
3c‧‧‧負的電極圖案(負的電極)3c‧‧‧negative electrode pattern (negative electrode)
5,5a‧‧‧靜電吸盤板5,5a‧‧‧electrostatic chuck plate
7‧‧‧樹脂薄板7‧‧‧ resin sheet
7a‧‧‧第1面7a‧‧‧Part 1
7b‧‧‧第2面7b‧‧‧side 2
9‧‧‧黏著劑9‧‧‧ Adhesive
2‧‧‧雷射加工裝置2‧‧‧laser processing equipment
4‧‧‧吸盤台4‧‧‧ Suction table
4a‧‧‧保持面4a‧‧‧ keep face
6‧‧‧雷射照射單元6‧‧‧laser irradiation unit
6a‧‧‧雷射束6a‧‧‧laser beam
12‧‧‧框單元12‧‧‧ frame unit
14‧‧‧框14‧‧‧box
14a‧‧‧第1面14a‧‧‧Part 1
14b‧‧‧第2面14b‧‧‧Part 2
14c‧‧‧開口14c‧‧‧ opening
16‧‧‧基底薄板16‧‧‧ base sheet
16a‧‧‧第1面16a‧‧‧Part 1
16b‧‧‧第2面16b‧‧‧Part 2
18‧‧‧覆蓋薄板18‧‧‧ Cover sheet
20a‧‧‧第1配線20a‧‧‧The first wiring
20b‧‧‧第2配線20b‧‧‧ 2nd wiring
22‧‧‧給電單元22‧‧‧ Power Supply Unit
22a‧‧‧電池夾具22a‧‧‧battery clamp
22b‧‧‧開關22b‧‧‧Switch
24‧‧‧電池24‧‧‧ Battery
圖1(A)是模式性地表示在基底基板形成有導電體膜的狀態的剖面圖,圖1(B)是模式性地表示導電體膜被剝蝕加工的樣子的剖面圖,圖1(C)是模式性地表示完成後的靜電吸盤板的構造的剖面圖。 圖2是模式性地表示完成後的靜電吸盤板的構造的平面圖。 圖3是模式性地表示使用靜電吸盤板的框單元的構造的立體圖。 圖4是模式性地表示使用靜電吸盤板的框單元的構造的剖面圖。 圖5是模式性地表示使被加工物吸附於框單元的樣子的立體圖。 圖6(A)是模式性地表示以變形例的靜電吸盤板的製造方法來剝蝕加工導電體膜的樣子的剖面圖,圖6(B)是模式性地表示以變形例的靜電吸盤板的製造方法來從被貼附於基底基板的電極剝離樹脂薄板的樣子的剖面圖,圖6(C)是模式性地表示以變形例的靜電吸盤板的製造方法所製造的靜電吸盤板的構造的剖面圖。FIG. 1 (A) is a cross-sectional view schematically showing a state in which a conductive film is formed on a base substrate, and FIG. 1 (B) is a cross-sectional view schematically showing a state in which the conductive film is ablated. FIG. 1 (C ) Is a cross-sectional view schematically showing the structure of the completed electrostatic chuck plate. FIG. 2 is a plan view schematically showing the structure of the completed electrostatic chuck plate. FIG. 3 is a perspective view schematically showing a structure of a frame unit using an electrostatic chuck plate. FIG. 4 is a cross-sectional view schematically showing a structure of a frame unit using an electrostatic chuck plate. FIG. 5 is a perspective view schematically showing a state in which a workpiece is adsorbed on a frame unit. FIG. 6 (A) is a cross-sectional view schematically showing a state in which a conductive film is ablated by a manufacturing method of an electrostatic chuck plate according to a modification example, and FIG. 6 (B) is a schematic view showing an electrostatic chuck plate according to a modification example. 6 (C) is a cross-sectional view schematically showing a structure of an electrostatic chuck plate manufactured by a manufacturing method of an electrostatic chuck plate according to a modification method in which a resin sheet is peeled from an electrode attached to a base substrate by a manufacturing method. Sectional view.
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