TW201835575A - Probe, probe head and method of manufacturing probe head - Google Patents
Probe, probe head and method of manufacturing probe head Download PDFInfo
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- TW201835575A TW201835575A TW106108979A TW106108979A TW201835575A TW 201835575 A TW201835575 A TW 201835575A TW 106108979 A TW106108979 A TW 106108979A TW 106108979 A TW106108979 A TW 106108979A TW 201835575 A TW201835575 A TW 201835575A
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Abstract
Description
本發明是關於一種探針及其組裝結構,且特別是有關於一種測試半導體之探針及其組裝結構。 The present invention relates to a probe and an assembly structure thereof, and more particularly to a probe for testing a semiconductor and an assembly structure thereof.
探針卡的主要功用是藉由其探針與待測物(如尚未封裝之晶圓、晶片或晶粒)上的銲墊或者是凸塊直接接觸,配合周邊測試機台與軟體控制而達到量測的目的,並進一步篩選出不良品。通常是藉由測試機台發送測試訊號,經探針卡到待測物,再由待測物回送測試結果訊號,經探針卡到測試機台進行分析。 The main function of the probe card is to directly contact the solder pads or bumps on the object to be tested (such as wafers, wafers or dies that have not been packaged), and to meet the peripheral test machine and software control. The purpose of the measurement is to further screen out the defective product. Usually, the test signal is sent by the test machine, and the probe is stuck to the object to be tested, and then the test result signal is sent back by the test object, and the probe card is sent to the test machine for analysis.
一般而言,探針卡上具有探針頭,用以固定一定數量的探針。為提高測試的品質,讓探針具有一致的形態,無疑為業界一個重要的發展方向。 In general, the probe card has a probe head for securing a certain number of probes. In order to improve the quality of the test and make the probe have a consistent shape, it is undoubtedly an important development direction for the industry.
因此,本發明之目的之一在於提供一種探針頭,其能使探針的針尖及/或針尾相對絕緣層的位置具有一致性。 Accordingly, it is an object of the present invention to provide a probe head that provides uniformity of the position of the tip and/or the tail of the probe relative to the insulating layer.
根據本發明的一實施方式,一種探針包含導電本體與絕緣層。導電本體具有位於兩相對端之針尖與針尾。絕緣層包覆於導電本體除針尖與針尾外的其餘部分,絕緣層於裸露出針尖之一端具有針尖漸層區,針尖漸層區之截面積朝向針尖逐漸減小,絕緣層於裸露出針尾之一端具有針尾漸層區,針尾漸層區之截面積朝向針尾逐漸減小。針尖漸層區沿導電本體之長軸方向具有第一長度,針尾漸層區沿導電本體之長軸方向具有第二長度,第一長度大於第二長度。 According to an embodiment of the invention, a probe includes a conductive body and an insulating layer. The electrically conductive body has a needle tip and a needle tail at opposite ends. The insulating layer is coated on the conductive body except for the needle tip and the tail of the needle. The insulating layer has a needle tip gradation area at one end of the exposed needle tip, and the cross-sectional area of the needle tip gradation area gradually decreases toward the needle tip, and the insulating layer exposes the needle tail. One end has a needle-tailed gradation zone, and the cross-sectional area of the needle-tailed gradation zone gradually decreases toward the needle tail. The tip gradation zone has a first length along the long axis direction of the conductive body, and the needle tail gradation zone has a second length along the long axis direction of the conductive body, and the first length is greater than the second length.
根據本發明的一實施方式,一種探針頭包含導板結構與複數個探針。探針穿越導板結構。探針包含導電本體與絕緣層。導電本體具有針尖與針尾。絕緣層包覆導電本體,絕緣層裸露出針尖,且絕緣層於裸露出針尖之一端具有針尖漸層區,針尖漸層區之截面積朝向針尖逐漸減小。 In accordance with an embodiment of the invention, a probe head includes a guide structure and a plurality of probes. The probe passes through the guide structure. The probe includes a conductive body and an insulating layer. The conductive body has a needle tip and a needle tail. The insulating layer is covered with the conductive body, the insulating layer is exposed with the tip of the needle, and the insulating layer has a needle tip grading area at one end of the bare needle tip, and the cross-sectional area of the needle tip grading area gradually decreases toward the needle tip.
根據本發明的一實施方式,一種探針頭的製造方法包含:形成複數個絕緣層分別包覆複數個導電本體,以形成複數個探針;將探針植入導板結構,並將探針之至少一第一末端裸露於導板結構外;以及對探針裸露於導板結構外之第一末端進行乾式蝕刻,以去除包覆導電本體之第一末端的絕緣層。 According to an embodiment of the present invention, a method of manufacturing a probe head includes: forming a plurality of insulating layers respectively covering a plurality of conductive bodies to form a plurality of probes; implanting the probes into the guide structure, and the probes At least one first end is exposed outside the guide structure; and the first end of the probe exposed outside the guide structure is dry etched to remove the insulating layer covering the first end of the conductive body.
100‧‧‧探針頭 100‧‧‧ probe head
110‧‧‧導板結構 110‧‧‧Guide structure
111‧‧‧上導板 111‧‧‧Upper guide
111a‧‧‧第一上導板 111a‧‧‧First upper guide
111b‧‧‧第二上導板 111b‧‧‧Second upper guide
112‧‧‧下導板 112‧‧‧ lower guide
112a‧‧‧第一下導板 112a‧‧‧First lower guide
112b‧‧‧第二下導板 112b‧‧‧Second lower guide
113‧‧‧連接板 113‧‧‧Connecting plate
120‧‧‧探針 120‧‧‧ probe
121‧‧‧導電本體 121‧‧‧Electrical body
122‧‧‧針尖 122‧‧‧Needle
123‧‧‧針尾 123‧‧‧needle tail
126‧‧‧絕緣層 126‧‧‧Insulation
127‧‧‧針尖漸層區 127‧‧‧Needle gradation
128‧‧‧針尾漸層區 128‧‧‧ needle tail gradient zone
200‧‧‧空間轉換架構 200‧‧‧ Space Conversion Architecture
300‧‧‧電路板 300‧‧‧ boards
400‧‧‧探針卡 400‧‧‧ Probe Card
H1、H11‧‧‧第一穿孔 H1, H11‧‧‧ first perforation
H2、H12‧‧‧第二穿孔 H2, H12‧‧‧ second perforation
H21‧‧‧第三穿孔 H21‧‧‧ third perforation
H22‧‧‧第四穿孔 H22‧‧‧fourth perforation
L1‧‧‧第一長度 L1‧‧‧ first length
L2‧‧‧第二長度 L2‧‧‧ second length
OD1‧‧‧第一外徑 OD1‧‧‧ first outer diameter
OD2‧‧‧第二外徑 OD2‧‧‧ second outer diameter
P‧‧‧電漿 P‧‧‧Plastic
S‧‧‧空間 S‧‧‧ Space
第1圖為繪示依照本發明一實施方式之探針頭的應用示意圖。 FIG. 1 is a schematic view showing the application of a probe head according to an embodiment of the present invention.
第2圖為繪示第1圖之探針的放大圖。 Fig. 2 is an enlarged view showing the probe of Fig. 1.
第3圖為繪示第2圖之針尖的局部放大圖。 Fig. 3 is a partially enlarged view showing the needle tip of Fig. 2.
第4圖為繪示第2圖之針尾的局部放大圖。 Fig. 4 is a partially enlarged view showing the tail of the second figure.
第5~7圖為繪示第1圖之探針頭的製造流程圖。 Figures 5 to 7 are flow charts showing the manufacture of the probe head of Figure 1.
第8圖為繪示依照本發明另一實施方式之探針的放大圖。 Fig. 8 is an enlarged view showing a probe according to another embodiment of the present invention.
第9~14圖為繪示應用第8圖之探針之探針頭的製造流程圖。 Figures 9 through 14 are flow charts showing the manufacture of the probe head to which the probe of Figure 8 is applied.
以下將以圖式揭露本發明之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本發明。也就是說,在本發明部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。且若實施上為可能,不同實施例的特徵係可以交互應用。 The embodiments of the present invention are disclosed in the following drawings, and the details of However, it should be understood that these practical details are not intended to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. In addition, some of the conventional structures and elements are shown in the drawings in a simplified schematic manner in order to simplify the drawings. And if implementation is possible, the features of different embodiments can be applied interactively.
請參照第1圖,其為繪示依照本發明一實施方式之探針頭100的應用示意圖。如第1圖所示,探針頭100透過空間轉換架構200與電路板300進行電性連接,以形成探針卡400。在實務的應用中,探針頭100配置以與待測物(Device Under Test;DUT)進行電性連接,以對待測物進行電訊號的測試。具體而言,複數個探針120組裝至導板結構110以形成探針頭100。 Please refer to FIG. 1 , which is a schematic diagram showing the application of the probe head 100 according to an embodiment of the present invention. As shown in FIG. 1, the probe head 100 is electrically connected to the circuit board 300 through the space conversion architecture 200 to form the probe card 400. In a practical application, the probe head 100 is configured to be electrically connected to a Device Under Test (DUT) to perform a signal test on the object to be tested. In particular, a plurality of probes 120 are assembled to the guide structure 110 to form the probe head 100.
請參照第2圖,其為繪示第1圖之探針120的放大圖。如第2圖所示,探針120包含導電本體121與絕緣層 126。導電本體121具有位於兩相對端之針尖122與針尾123。絕緣層126包覆於導電本體121除針尖122與針尾123外的其餘部份。換句話說,絕緣層126包覆導電本體121,且絕緣層126露出針尖122與針尾123。更準確而言,針尖122與針尾123為導電本體121未被絕緣層126包覆的兩末端,而且,針尖122與針尾123在探針120組裝至導板結構110後,將裸露於導板結構110外。在實務的應用中,導電本體121的針徑是固定的,在微小間距(Fine pitch)需求之下,相鄰兩探針120之間的間距也被要求,而導板結構110的穿孔作用在於限制探針120的位置,使得相鄰兩穿孔之間的間距也被要求,然而導板結構110本身具有一定的結構強度,兩穿孔之間側壁厚需要一定的厚度避免導板結構110加工穿孔時破損,因此穿孔的孔徑會有一定的限制,在導電本體121的針徑與穿孔的孔徑有一定的限制情況下,絕緣層126的厚度範圍可為約30奈米(nm)與約200奈米之間,但本發明並不以此為限。 Please refer to FIG. 2 , which is an enlarged view of the probe 120 of FIG. 1 . As shown in FIG. 2, the probe 120 includes a conductive body 121 and an insulating layer 126. The conductive body 121 has a needle tip 122 and a needle tail 123 at opposite ends. The insulating layer 126 covers the remaining portion of the conductive body 121 except the needle tip 122 and the needle tail 123. In other words, the insulating layer 126 covers the conductive body 121, and the insulating layer 126 exposes the needle tip 122 and the needle tail 123. More precisely, the tip 122 and the tail 123 are the ends of the conductive body 121 that are not covered by the insulating layer 126, and the tip 122 and the tail 123 are exposed to the guide structure after the probe 120 is assembled to the guide structure 110. 110 outside. In practical applications, the diameter of the conductive body 121 is fixed. Under the need of Fine pitch, the spacing between adjacent probes 120 is also required, and the perforation of the guide structure 110 lies in Limiting the position of the probe 120 so that the spacing between adjacent two perforations is also required, however, the guide structure 110 itself has a certain structural strength, and the thickness of the side wall between the two perforations requires a certain thickness to avoid the guide plate structure 110 when the perforation is processed. The diameter of the perforation has a certain limitation. The thickness of the insulating layer 126 may range from about 30 nanometers (nm) to about 200 nm in the case where the diameter of the diameter of the conductive body 121 and the aperture of the through hole are limited. Between, but the invention is not limited thereto.
在本實施方式中,探針120的類別可為成形針或以微機電製程(MEMS)電鑄製作的探針,亦即探針120具有彎曲的部分,使得針尖122與針尾123不在同一水平延伸軸向上,針尖122與針尾123可互相平行,但本發明並不以此為限,因此,當探針120組裝至導板結構110後,探針120彎曲的部分將與導板結構110形成止擋的效果,亦即探針120的位置受到局限,而不能相對導板結構110移動。在探針組裝至導板結構110時,鄰近針尖122的導板結構110 穿孔與鄰近針尾123的導板結構110穿孔不在同一水平延伸軸向上,會偏移一距離。 In the present embodiment, the type of the probe 120 may be a forming needle or a probe fabricated by microelectromechanical processing (MEMS) electroforming, that is, the probe 120 has a curved portion such that the needle tip 122 does not extend at the same level as the needle tail 123. In the axial direction, the needle tip 122 and the needle tail 123 can be parallel to each other, but the invention is not limited thereto. Therefore, when the probe 120 is assembled to the guide plate structure 110, the bent portion of the probe 120 will be formed with the guide plate structure 110. The effect of the stop, i.e., the position of the probe 120, is limited and cannot be moved relative to the guide structure 110. When the probe is assembled to the guide structure 110, the perforation of the guide structure 110 adjacent the tip 122 is not in the same horizontal extension axis as the guide structure 110 of the adjacent pin tail 123, and is offset by a distance.
請參照第3圖,其為繪示第2圖之針尖122的局部放大圖。如第3圖所示,絕緣層126於裸露出針尖122之一端其膜厚具有漸層的變化,即絕緣層126於裸露出針尖122之一端具有針尖漸層區127,針尖漸層區127之第一外徑OD1朝向針尖122逐漸減小。也就是說,針尖漸層區127之截面積朝向針尖122逐漸減小。藉由絕緣層126於裸露出針尖122之一端具有針尖漸層區127,絕緣層126於裸露出針尖122之一端剝離導電本體121的機會得以有效降低。 Please refer to FIG. 3, which is a partial enlarged view of the needle tip 122 of FIG. As shown in FIG. 3, the insulating layer 126 has a gradual change in film thickness at one end of the exposed tip 122, that is, the insulating layer 126 has a tip gradation region 127 at one end of the exposed tip 122, and the tip gradation region 127 The first outer diameter OD1 gradually decreases toward the needle tip 122. That is, the cross-sectional area of the needle tip gradation area 127 gradually decreases toward the needle tip 122. By having the pinpoint grading region 127 at one end of the exposed tip 122 of the insulating layer 126, the chance of the insulating layer 126 peeling off the conductive body 121 at one end of the exposed tip 122 is effectively reduced.
請參照第4圖,其為繪示第2圖之針尾123的局部放大圖。另外,如第4圖所示,絕緣層126於裸露出針尾123之一端其膜厚具有漸層的變化,即絕緣層126於裸露出針尾123之一端具有針尾漸層區128,針尾漸層區128之第二外徑OD2朝向針尾123逐漸減小。也就是說,針尾漸層區128之截面積朝向針尾123逐漸減小。相似地,藉由絕緣層126於裸露出針尾123之一端具有針尾漸層區128,絕緣層126於裸露出針尾123之一端剝離導電本體121的機會得以有效降低。 Please refer to FIG. 4, which is a partial enlarged view of the needle tail 123 of FIG. In addition, as shown in FIG. 4, the insulating layer 126 has a gradual change in the film thickness at one end of the exposed pin tail 123, that is, the insulating layer 126 has a needle tail gradation area 128 at one end of the exposed pin tail 123, and the needle tail gradation area The second outer diameter OD2 of 128 gradually decreases toward the needle tail 123. That is to say, the cross-sectional area of the needle tail gradation area 128 gradually decreases toward the needle tail 123. Similarly, by the insulating layer 126 having the pin tail gradation region 128 at one end of the exposed pin tail 123, the chance of the insulating layer 126 peeling off the conductive body 121 at one end of the exposed pin tail 123 is effectively reduced.
再者,如第3圖所示,針尖漸層區127沿導電本體121之長軸方向具有第一長度L1,如第4圖所示,針尾漸層區128沿導電本體121之長軸方向具有第二長度L2。在本實施方式中,第一長度L1大於第二長度L2。在實務的應用中,針尾123要接觸探針卡400的空間轉換器200的接點, 以進行訊號的傳輸,所以針尾123會較針尖122的尺寸短,第二長度L2可小於約100微米(μm)。另外,為要達到絕緣的功能性,絕緣層126的材質可例如為金屬氧化物或高分子聚合物材料等,但本發明並不以此為限。 Furthermore, as shown in FIG. 3, the tip gradation region 127 has a first length L1 along the long axis direction of the conductive body 121. As shown in FIG. 4, the needle tail gradation region 128 has a long axis direction along the conductive body 121. The second length L2. In the present embodiment, the first length L1 is greater than the second length L2. In practical applications, the pin tail 123 is in contact with the contact of the space transformer 200 of the probe card 400 for signal transmission, so the pin tail 123 will be shorter than the tip 122 and the second length L2 may be less than about 100 microns ( Mm). In addition, in order to achieve the function of the insulation, the material of the insulating layer 126 may be, for example, a metal oxide or a polymer material, but the invention is not limited thereto.
具體而言,在探針頭100的製造過程中,先形成絕緣層126分別包覆每根導電本體121,以形成複數個探針120。 Specifically, in the manufacturing process of the probe head 100, an insulating layer 126 is formed to cover each of the conductive bodies 121 to form a plurality of probes 120.
其後,請參照第5~7圖。第5~7圖為繪示第1圖之探針頭100的製造流程圖。如第5圖所示,將探針120植入導板結構110,並將探針120之至少一末端裸露於導板結構110外。換句話說,探針120穿越導板結構110,而且,在本實施方式中,探針120更彼此實質上平行排列。 Then, please refer to pictures 5~7. 5 to 7 are flowcharts showing the manufacture of the probe head 100 of Fig. 1. As shown in FIG. 5, the probe 120 is implanted into the guide structure 110, and at least one end of the probe 120 is exposed outside the guide structure 110. In other words, the probe 120 traverses the guide structure 110, and, in the present embodiment, the probes 120 are more substantially parallel to each other.
然後,如第6圖所示,再實質上垂直地朝向導板結構110施加電漿P,以對探針120裸露於導板結構110外之末端進行乾式蝕刻(Dry etching),以去除包覆導電本體121之末端(在第6圖中為針尾123,在其他實施方式中可為針尖122)的絕緣層126,並使導電本體121之末端(在第6圖中為針尾123,在其他實施方式中可為針尖122)裸露於導板結構110外。在實務的應用中,用以乾式蝕刻的電漿P可為氬氣(Argon)、氧氣(Oxygen)、四氟化碳(CF4)或上述氣體的混合物,但本發明並不以此為限。 Then, as shown in FIG. 6, the plasma P is applied substantially perpendicularly toward the guide structure 110 to dry-etch the probe 120 exposed at the end of the guide structure 110 to remove the cladding. The insulating layer 126 of the end of the conductive body 121 (in the sixth figure, the needle tail 123, in other embodiments may be the needle tip 122), and the end of the conductive body 121 (in the sixth figure, the needle tail 123, in other implementations) In the manner, the tip 122) may be exposed outside the guide structure 110. In practical applications, the plasma P used for dry etching may be argon (Argon), oxygen (Oxygen), carbon tetrafluoride (CF4) or a mixture of the above gases, but the invention is not limited thereto.
當探針120包覆針尾123的一端被電漿P蝕刻時,除了能使導電本體121的針尾123被裸露出來之外,絕緣層126於裸露出針尾123之一端亦形成針尾漸層區128 (針尾漸層區128的放大圖請見第4圖),而且,藉由乾式蝕刻的效果,如上所述,針尾漸層區128之第二外徑OD2朝向針尾123的方向逐漸減小。亦即,針尾漸層區128之截面積朝向針尾123逐漸減小。值得注意的是,在本實施方式中,針尾漸層區128至少部分裸露於導板結構110外。 When one end of the probe 120 covering the needle tail 123 is etched by the plasma P, in addition to being able to expose the needle tail 123 of the conductive body 121, the insulating layer 126 forms a needle tail gradation area 128 at one end of the bare needle tail 123 ( The enlarged view of the needle tail gradation area 128 is shown in Fig. 4), and by the effect of the dry etching, as described above, the second outer diameter OD2 of the needle tail gradation area 128 gradually decreases toward the direction of the needle tail 123. That is, the cross-sectional area of the needle tail gradation area 128 gradually decreases toward the needle tail 123. It should be noted that in the present embodiment, the needle tail grading area 128 is at least partially exposed outside the guide structure 110.
然後,如第7圖所示,再實質上垂直地朝向導板結構110施加電漿P,以對探針120裸露於導板結構110外之另一末端進行乾式蝕刻,以去除包覆導電本體121末端(在第7圖中為針尖122,在其他實施方式中可為針尾123)的絕緣層126,並使導電本體121的末端(在第7圖中為針尖122,在其他實施方式中可為針尾123)裸露於導板結構110外。 Then, as shown in FIG. 7, the plasma P is applied substantially perpendicularly to the guide structure 110 to dry-etch the probe 120 exposed to the other end of the guide structure 110 to remove the coated conductive body. The insulating layer 126 of the end of 121 (the tip 122 in the seventh embodiment, and the needle tail 123 in other embodiments), and the end of the conductive body 121 (in the seventh drawing, the tip 122, in other embodiments The needle tail 123) is exposed outside the guide structure 110.
相似地,當探針120包覆針尖122的一端被電漿P蝕刻時,除了能使導電本體121的針尖122被裸露出來之外,絕緣層126於裸露出針尖122之一端亦形成針尖漸層區127(針尖漸層區127的放大圖請見第3圖),而且,藉由乾式蝕刻的效果,如上所述,針尖漸層區127之第一外徑OD1朝向針尖122的方向逐漸減小。亦即,針尖漸層區127之截面積朝向針尖122逐漸減小。值得注意的是,在本實施方式中,針尖漸層區127至少部分裸露於導板結構110外。 Similarly, when one end of the probe 120 covering the tip 122 is etched by the plasma P, in addition to being able to expose the tip 122 of the conductive body 121, the insulating layer 126 forms a tip gradation at one end of the exposed tip 122. The area 127 (see the enlarged view of the needle tip gradation area 127), and, by the effect of the dry etching, as described above, the first outer diameter OD1 of the needle tip gradation area 127 gradually decreases toward the needle tip 122. . That is, the cross-sectional area of the tip gradation area 127 gradually decreases toward the needle tip 122. It should be noted that in the present embodiment, the tip gradation area 127 is at least partially exposed outside the guide structure 110.
另一方面,在本實施方式中,導板結構110更包含上導板111、下導板112以及連接板113。如第5~7圖所示,上導板111具有複數個第一穿孔H1,探針120分別穿越對應之第一穿孔H1,且針尾123至少部分裸露於上導板 111外。上導板111與下導板112之間具有空間S,下導板112具有複數個第二穿孔H2,探針120分別穿越對應之第二穿孔H2,且針尖122至少部分裸露於下導板112外。連接板113連接於上導板111與下導板112之間。將探針120植入導板結構110的過程中,需先將探針120分別穿越對應之第二穿孔H2,之後再將上導板111的第一穿孔H1對應探針120使探針120穿越對應之第一穿孔H1,最後將上導板111、下導板112以及連接板113組裝。 On the other hand, in the present embodiment, the guide structure 110 further includes an upper guide 111, a lower guide 112, and a connecting plate 113. As shown in FIGS. 5-7, the upper guide plate 111 has a plurality of first through holes H1, and the probes 120 respectively pass through the corresponding first through holes H1, and the needle tails 123 are at least partially exposed outside the upper guide plates 111. There is a space S between the upper guide plate 111 and the lower guide plate 112. The lower guide plate 112 has a plurality of second through holes H2. The probes 120 respectively pass through the corresponding second through holes H2, and the needle tips 122 are at least partially exposed to the lower guide plates 112. outer. The connecting plate 113 is connected between the upper guide plate 111 and the lower guide plate 112. In the process of implanting the probe 120 into the guide structure 110, the probe 120 is first traversed through the corresponding second through hole H2, and then the first through hole H1 of the upper guide plate 111 is adapted to the probe 120 to pass the probe 120. Corresponding to the first through hole H1, the upper guide plate 111, the lower guide plate 112, and the connecting plate 113 are finally assembled.
在探針頭100的操作中,當探針120的針尖122抵接待測物時,即使相鄰的探針120因為受壓挫曲變形而於上導板111與下導板112之間的空間S內彼此接觸,由於導電本體121於針尖122與針尾123之間的部分受到絕緣層126的包覆,因此,兩相鄰的探針120不會產生短路的問題。 In the operation of the probe head 100, when the tip 122 of the probe 120 abuts the object, even if the adjacent probe 120 is deformed by pressure, the space between the upper and lower guides 111 and 112 is deformed. Since S is in contact with each other, since the portion of the conductive body 121 between the tip 122 and the tail 123 is covered by the insulating layer 126, the problem that the adjacent probes 120 do not cause a short circuit.
由於對探針120裸露於導板結構110外之末端進行乾式蝕刻,以去除包覆導電本體121末端的絕緣層126,並使導電本體121的末端(即針尖122或針尾123)裸露於絕緣層126外,係可以於複數個探針120與導板結構110組裝後同時針對複數個探針120進行,因此,每一根探針120的針尖122相對針尖漸層區127的位置,或是針尾123相對針尾漸層區128的位置,均可具有一致性。如此一來,探針頭100在組成探針卡400後對待測物進行測試的針痕亦具有均一性。在實際的運作上,同時針對複數個探針120進行乾式蝕刻,可使其中約70%以上數量的探針120具有位置相同的絕緣層126。所謂位置相同的絕緣層126,舉例而言, 即每一根探針120的針尖122的末端分別與針尖漸層區127之間的距離,或是每一根探針120的針尾123的末端分別與針尾漸層區128之間的距離,均落於約為正負20微米~30微米的公差範圍內。換言之,當複數個探針120植入導板結構110且進行乾式蝕刻後,其針尖漸層區127或針尾漸層區128在40微米~60微米的範圍內彼此對齊。 Since the end of the probe 120 exposed outside the guide structure 110 is dry etched to remove the insulating layer 126 covering the end of the conductive body 121, the end of the conductive body 121 (ie, the tip 122 or the tail 123) is exposed to the insulating layer. In addition to 126, a plurality of probes 120 can be assembled with the guide structure 110 simultaneously for a plurality of probes 120. Therefore, the position of the tip 122 of each probe 120 relative to the tip gradation area 127, or the end of the needle 123 can be consistent with respect to the position of the needle tail grading area 128. As a result, the needle tip 100 has a uniformity in the needle mark to be tested after the probe card 400 is formed. In actual operation, while performing dry etching on the plurality of probes 120, about 70% or more of the probes 120 may have the same insulating layer 126. The so-called insulating layer 126 of the same position, for example, the distance between the end of the tip 122 of each probe 120 and the tip gradation area 127, or the end of the tail 123 of each probe 120, respectively The distance from the needle tail grading zone 128 falls within a tolerance of approximately plus or minus 20 microns to 30 microns. In other words, when a plurality of probes 120 are implanted into the guide structure 110 and dry etched, the tip gradation region 127 or the needle gradation region 128 is aligned with each other in the range of 40 micrometers to 60 micrometers.
再者,由於對探針120裸露於導板結構110外之末端進行乾式蝕刻,以去除包覆導電本體121末端的絕緣層126,並使導電本體121的末端(即針尖122或針尾123)裸露於絕緣層126外,係可以於複數個探針120與導板結構110組裝後同時針對複數個探針120進行,因此探針頭100的製作時間亦可有效節省,使得探針頭100的製作成本亦相應下降。 Furthermore, since the end of the probe 120 exposed outside the guide structure 110 is dry etched to remove the insulating layer 126 covering the end of the conductive body 121, and the end of the conductive body 121 (ie, the needle tip 122 or the needle tail 123) is exposed. The outer surface of the insulating layer 126 can be simultaneously applied to the plurality of probes 120 after the plurality of probes 120 and the guide structure 110 are assembled, so that the manufacturing time of the probe head 100 can be effectively saved, so that the probe head 100 can be fabricated. The cost has also decreased accordingly.
另一方面,由於複數個探針120的乾式蝕刻可以同時進行,因此,探針120適於進行大量生產,且乾式蝕刻後所形成的探針120可以從導板結構110取出,以作後備之用。當探針卡400進行測試時,探針120與待測物的接點接觸,從而進行電訊號的測試。由於待測物的接點會磨損探針120,因此探針120在使用一段時間後就需要更換。然而,應了解到,由於探針120的形成可能存在誤差,因此後備的探針120與原來的探針120之間可能會存在針尖漸層區127及/或針尾漸層區128位置不一致的狀況。具體而言,需要更換的探針120通常只佔探針頭100上探針120的少數,所以在更換少數受損的探針120之後,探針頭100整體探針 120的針尖漸層區127及/或針尾漸層區128位置是大部分一致的。 On the other hand, since the dry etching of the plurality of probes 120 can be performed simultaneously, the probe 120 is suitable for mass production, and the probe 120 formed after the dry etching can be taken out from the guide structure 110 for backup. use. When the probe card 400 is tested, the probe 120 is in contact with the contact of the object to be tested, thereby performing a test of the electrical signal. Since the contact of the object to be tested wears the probe 120, the probe 120 needs to be replaced after a period of use. However, it should be understood that there may be an error in the formation of the probe 120, so there may be a situation in which the needle tip gradation area 127 and/or the needle tail gradation area 128 are inconsistent between the backup probe 120 and the original probe 120. . In particular, the probe 120 that needs to be replaced typically only occupies a minority of the probes 120 on the probe head 100, so after replacing a few damaged probes 120, the probe tip 100 has a tip gradation zone 127 of the integral probe 120. And/or the needle tail grading zone 128 position is mostly consistent.
請參照第8圖,其為繪示依照本發明另一實施方式之探針120的放大圖。在本實施方式中,如第8圖所示,探針120的類別可為線針,亦即探針120可彎曲且不會永久變形,因此,探針120能在組裝至導板結構110時,可沿其軸線相對導板結構110移動,即探針120在組裝過程為直線型,可輕易穿過3片或4片導板組成的導板結構110,確認複數量的探針120直入導板結構110之後,上導板111或下導板112經適當錯位,探針120受到導板之間因錯位形成的側向力,呈現S形式的彎曲型態固定於導板結構110之中,可避免探針120滑落的情形。探針120組裝至導板結構110後的形狀類似第2圖的架構。 Please refer to FIG. 8 , which is an enlarged view of the probe 120 according to another embodiment of the present invention. In the present embodiment, as shown in FIG. 8, the type of the probe 120 may be a wire needle, that is, the probe 120 may be bent and not permanently deformed, and therefore, the probe 120 can be assembled to the guide structure 110. It can be moved along its axis relative to the guide structure 110, that is, the probe 120 is linear in the assembly process, and can easily pass through the guide structure 110 composed of three or four guide plates, and confirm that the plurality of probes 120 are directly guided. After the plate structure 110, the upper guide plate 111 or the lower guide plate 112 is appropriately misaligned, and the probe 120 is subjected to a lateral force formed by the misalignment between the guide plates, and the curved form of the S form is fixed in the guide plate structure 110. The situation in which the probe 120 slips can be avoided. The shape of the probe 120 assembled to the guide structure 110 is similar to the structure of Figure 2.
請參照第9~14圖。第9~14圖為繪示應用第8圖之探針120之探針頭100的製造流程圖。如第9圖所示,探針120先分別植入導板結構110,而探針120之兩相對端裸露於導板結構110外。 Please refer to pictures 9~14. 9 to 14 are flowcharts showing the manufacture of the probe head 100 to which the probe 120 of Fig. 8 is applied. As shown in FIG. 9, the probes 120 are first implanted in the guide structure 110, respectively, and the opposite ends of the probe 120 are exposed outside the guide structure 110.
其後,如第10圖所示,使探針120相對導板結構110移動,讓探針120之其中一末端更可根據實際的狀況進一步凸出於導板結構110外。然後,如第11圖所示,再實質上垂直地朝向導板結構110施加電漿P,以對探針120裸露於導板結構110外之末端進行乾式蝕刻,以去除包覆導電本體121末端(在第11圖中為針尖122,在其他實施方式中可為針尾123)的絕緣層126,並使導電本體121的末端(在 第11圖中為針尖122,在其他實施方式中可為針尾123)裸露於導板結構110外。 Thereafter, as shown in FIG. 10, the probe 120 is moved relative to the guide structure 110, so that one end of the probe 120 can further protrude outside the guide structure 110 according to actual conditions. Then, as shown in FIG. 11, the plasma P is applied substantially perpendicularly to the guide structure 110 to dry-etch the end of the probe 120 exposed outside the guide structure 110 to remove the end of the covered conductive body 121. The insulating layer 126 (in the eleventh figure, the tip 122, in other embodiments may be the tail 123), and the end of the conductive body 121 (in the 11th view, the tip 122, in other embodiments may be the tail 123) is exposed outside the guide structure 110.
舉例而言,當探針120包覆針尖122的一端被電漿P蝕刻時,除了能使導電本體121的針尖122被裸露出來之外,絕緣層126於裸露出針尖122之一端亦形成針尖漸層區127,而且,藉由乾式蝕刻的效果,如上所述,針尖漸層區127之第一外徑OD1朝向針尖122的方向逐漸減小。亦即,針尖漸層區127之截面積朝向針尖122逐漸減小。 For example, when one end of the probe 120 covering the tip 122 is etched by the plasma P, in addition to being able to expose the tip 122 of the conductive body 121, the insulating layer 126 forms a tip at one end of the exposed tip 122. The layer region 127, and, by the effect of the dry etching, as described above, the first outer diameter OD1 of the needle tip gradation region 127 gradually decreases toward the direction of the needle tip 122. That is, the cross-sectional area of the tip gradation area 127 gradually decreases toward the needle tip 122.
另一方面,在其他實施方式中,當探針120包覆針尾123的一端被電漿P蝕刻時,除了能使導電本體121的針尾123被裸露出來之外,絕緣層126於裸露出針尾123之一端亦形成針尾漸層區128,而且,藉由乾式蝕刻的效果,如上所述,針尾漸層區128之第二外徑OD2朝向針尾123的方向逐漸減小。亦即,針尾漸層區128之截面積朝向針尾123逐漸減小。 On the other hand, in other embodiments, when one end of the probe 120 covering the needle tail 123 is etched by the plasma P, the insulating layer 126 exposes the needle tail 123 except that the needle tail 123 of the conductive body 121 can be exposed. The needle end gradation area 128 is also formed at one end, and by the effect of the dry etching, as described above, the second outer diameter OD2 of the needle tail gradation area 128 gradually decreases toward the direction of the needle tail 123. That is, the cross-sectional area of the needle tail gradation area 128 gradually decreases toward the needle tail 123.
根據實際的應用狀況,如第12圖所示,由於探針120為線針(可彎曲且不會永久變形),探針120相對於導板結構110移動,且針尖漸層區127移動至導板結構110內,從而讓另一端被絕緣層126包覆的針尾123進一步凸出於導板結構110外,以進行後續的乾式蝕刻。 According to the actual application, as shown in Fig. 12, since the probe 120 is a wire needle (flexible and not permanently deformed), the probe 120 moves relative to the guide structure 110, and the needle gradation area 127 moves to the guide. Within the board structure 110, the tail 123, which is covered by the insulating layer 126 at the other end, is further protruded out of the guide structure 110 for subsequent dry etching.
或者,根據實際的應用狀況,如第13圖所示,探針120相對於導板結構110移動,且針尾漸層區128移動至導板結構110內,從而讓另一端被絕緣層126包覆的針尖122進一步凸出於導板結構110外,以施加電漿P並進行乾 式蝕刻。 Alternatively, according to the actual application, as shown in FIG. 13, the probe 120 moves relative to the guide structure 110, and the needle tail gradation area 128 moves into the guide structure 110, so that the other end is covered by the insulating layer 126. The tip 122 is further protruded out of the guide structure 110 to apply the plasma P and dry etch.
如第14圖所示,當包覆導電本體121的針尾123及針尖122的絕緣層126先後被去除後,探針120相對於導板結構110移動,此時,針尾漸層區128以及針尖漸層區127均至少部分位於導板結構110內,以便探針頭100後續的使用。 As shown in FIG. 14, when the needle tail 123 of the coated conductive body 121 and the insulating layer 126 of the needle tip 122 are successively removed, the probe 120 moves relative to the guide plate structure 110. At this time, the needle tail gradation area 128 and the needle tip gradually become The layer regions 127 are each at least partially located within the fence structure 110 for subsequent use by the probe head 100.
值得注意的是,在本實施方式中,導板結構110更包含第一上導板111a、第二上導板111b、第一下導板112a、第二下導板112b以及連接板113。第一上導板111a具有複數個第一穿孔H11,探針120分別穿越第一穿孔H11,且針尾123至少部分裸露於第一上導板111a外。第二上導板111b具有複數個第二穿孔H12,探針120分別穿越第二穿孔H12。第一下導板112a具有複數個第三穿孔H21,探針120分別穿越第三穿孔H21,第二上導板111b與第一下導板112a之間具有空間S。第二下導板112b具有複數個第四穿孔H22,探針120分別穿越第四穿孔H22,且針尖122至少部分裸露於第二下導板112b外。連接板113連接於第二上導板111b與第一下導板112a之間。本實施方式的探針120類別為線針,將探針120植入導板結構110的過程中,會先將探針120分別穿越第一穿孔H11、第二穿孔H12、第三穿孔H21、第四穿孔H22,之後再將第一上導板111a、第二上導板111b與第一下導板112a、第二下導板112b錯位使探針在空間S部分形成彎曲變形,最後將第一上導板111a、第二上導板111b、第一下導板112a、第二下導板112b以及連接 板113組裝。 It should be noted that in the embodiment, the guide structure 110 further includes a first upper guide 111a, a second upper guide 111b, a first lower guide 112a, a second lower guide 112b, and a connecting plate 113. The first upper guide plate 111a has a plurality of first through holes H11, and the probes 120 respectively pass through the first through holes H11, and the needle tails 123 are at least partially exposed outside the first upper guide plates 111a. The second upper guide plate 111b has a plurality of second through holes H12, and the probes 120 respectively pass through the second through holes H12. The first lower guide plate 112a has a plurality of third through holes H21, and the probes 120 respectively pass through the third through holes H21, and a space S is formed between the second upper guide plate 111b and the first lower guide plate 112a. The second lower guide plate 112b has a plurality of fourth through holes H22, and the probes 120 respectively pass through the fourth through holes H22, and the needle tips 122 are at least partially exposed outside the second lower guide plates 112b. The connecting plate 113 is connected between the second upper guide plate 111b and the first lower guide plate 112a. The type of the probe 120 of the present embodiment is a wire needle. When the probe 120 is implanted into the guide plate structure 110, the probe 120 is first traversed through the first through hole H11, the second through hole H12, and the third through hole H21, respectively. Four perforations H22, and then dislocation of the first upper guide plate 111a and the second upper guide plate 111b with the first lower guide plate 112a and the second lower guide plate 112b, so that the probe forms a bending deformation in the space S portion, and finally the first The upper guide plate 111a, the second upper guide plate 111b, the first lower guide plate 112a, the second lower guide plate 112b, and the connection plate 113 are assembled.
由於探針120穿越第一穿孔H11與第二穿孔H12且針尾123至少部分裸露於第一上導板111a外,因此,裸露於第一上導板111a外的探針120相對第一上導板111a的角度,可藉由調整第一穿孔H11與第二穿孔H12的相對位置來控制。相似地,由於探針120穿越第三穿孔H21與第四穿孔H22且針尖122至少部分裸露於第二下導板112b外,因此,裸露於第二下導板112b外的探針120相對第二下導板112b的角度,可藉由調整第三穿孔H21與第四穿孔H22的相對位置來控制。 Since the probe 120 traverses the first through hole H11 and the second through hole H12 and the needle tail 123 is at least partially exposed outside the first upper guide plate 111a, the probe 120 exposed outside the first upper guide plate 111a is opposite to the first upper guide plate. The angle of 111a can be controlled by adjusting the relative position of the first through hole H11 and the second through hole H12. Similarly, since the probe 120 traverses the third through hole H21 and the fourth through hole H22 and the tip 122 is at least partially exposed outside the second lower guide 112b, the probe 120 exposed outside the second lower guide 112b is opposite to the second The angle of the lower guide plate 112b can be controlled by adjusting the relative positions of the third through holes H21 and the fourth through holes H22.
值得注意的是,本發明的所有實施方式部分,在包覆導電本體121的針尾123及針尖122的絕緣層126去除的步驟中,並不限制針尖122或者針尾123的先後去除順序,先去除的部分可稱為第一末端,後去除的部分可稱為第二末端。 It should be noted that, in all the embodiments of the present invention, in the step of removing the insulating layer 126 of the needle body 123 and the needle tip 122 of the conductive body 121, the order of removing the needle tip 122 or the needle tail 123 is not limited, and the first step is removed. A portion may be referred to as a first end, and a portion removed later may be referred to as a second end.
綜上所述,本發明上述實施方式所揭露的技術方案至少具有以下優點: In summary, the technical solution disclosed in the foregoing embodiments of the present invention has at least the following advantages:
(1)由於對探針裸露於導板結構外之末端進行乾式蝕刻,以去除包覆導電本體末端的絕緣層,並使導電本體的末端(即針尖或針尾)裸露於絕緣層外,係可以於複數個探針與導板結構組裝後同時針對複數個探針進行,因此,每一根探針的針尖相對針尖漸層區的位置,或是針尾相對針尾漸層區的位置,均可具有一致性。如此一來,探針頭在組成探針卡後對待測物進行測試的針痕亦具有均一性。 (1) Since the probe is exposed to the end of the guide structure to dry-etch, to remove the insulating layer covering the end of the conductive body, and the end of the conductive body (ie, the needle tip or the needle tail) is exposed outside the insulating layer, After the plurality of probes and the guide plate structure are assembled, the plurality of probes are simultaneously performed. Therefore, the position of the tip of each probe relative to the gradation area of the needle tip or the position of the needle tail relative to the gradation area of the needle tail may have consistency. As a result, the needle tip of the probe head to be tested after the probe card is assembled has uniformity.
(2)藉由絕緣層於裸露出針尖之一端具有針尖漸層區,以及於裸露出針尾之一端具有針尾漸層區,絕緣層剝離導電本體的機會得以有效降低。 (2) The opportunity for the insulating layer to peel off the conductive body is effectively reduced by the insulating layer having the tip gradation area at one end of the bare needle tip and the needle tail grading area at one end of the exposed needle tail.
(3)由於對探針裸露於導板結構外之末端進行乾式蝕刻,以去除包覆導電本體末端的絕緣層,並使導電本體的末端(即針尖或針尾)裸露於絕緣層外,係可以於複數個探針與導板結構組裝後同時針對複數個探針進行,因此探針頭的製作時間亦可有效節省,使得探針頭的製作成本亦相應下降。 (3) Since the probe is exposed to the end of the guide structure to dry-etch, to remove the insulating layer covering the end of the conductive body, and the end of the conductive body (ie, the needle tip or the needle tail) is exposed outside the insulating layer, After the plurality of probes and the guide structure are assembled, the plurality of probes are simultaneously performed, so that the production time of the probe head can be effectively saved, and the manufacturing cost of the probe head is also reduced accordingly.
(4)由於複數個探針的乾式蝕刻可以同時進行,因此,探針適於進行大量生產,且乾式蝕刻後所形成的探針可以從導板結構取出,以作後備之用。 (4) Since the dry etching of a plurality of probes can be performed simultaneously, the probe is suitable for mass production, and the probe formed after the dry etching can be taken out from the guide structure for backup.
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be modified and modified without departing from the spirit and scope of the present invention. The scope is subject to the definition of the scope of the patent application attached.
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TWI752688B (en) * | 2019-12-26 | 2022-01-11 | 韓商Sda有限公司 | Adjustable microelectromechanical system (MEMS) probe card and its assembly method |
TWI850868B (en) * | 2022-11-24 | 2024-08-01 | 旺矽科技股份有限公司 | Probe head, vertical probe and method for manufacturing vertical probe |
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US6603322B1 (en) * | 1996-12-12 | 2003-08-05 | Ggb Industries, Inc. | Probe card for high speed testing |
WO2010096711A2 (en) * | 2009-02-19 | 2010-08-26 | Touchdown Technologies, Inc. | Probe head for a microelectronic contactor assembly, and methods of making same |
TWI553316B (en) * | 2014-04-21 | 2016-10-11 | 旺矽科技股份有限公司 | Probe head and probe |
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TWI752688B (en) * | 2019-12-26 | 2022-01-11 | 韓商Sda有限公司 | Adjustable microelectromechanical system (MEMS) probe card and its assembly method |
TWI850868B (en) * | 2022-11-24 | 2024-08-01 | 旺矽科技股份有限公司 | Probe head, vertical probe and method for manufacturing vertical probe |
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