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TW201705255A - 晶圓的加工方法 - Google Patents

晶圓的加工方法 Download PDF

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TW201705255A
TW201705255A TW105117584A TW105117584A TW201705255A TW 201705255 A TW201705255 A TW 201705255A TW 105117584 A TW105117584 A TW 105117584A TW 105117584 A TW105117584 A TW 105117584A TW 201705255 A TW201705255 A TW 201705255A
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Masaru Nakamura
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Abstract

本發明之課題是提供一種晶圓的加工方法,其在由脈衝雷射光線進行之改質層與裂隙的形成後,實行磨削步驟以分割成一個個的元件的情況下,不會有導致元件之品質降低之情形。解決手段是為解決上述課題,而將在本發明之晶圓的加工方法之改質層形成步驟中所設定的脈衝雷射光線之功率設定為下述功率:該功率是形成改質層及裂隙,使藉由在背面磨削步驟中所設定之預定的磨削條件進行磨削,而在達到成品厚度前可將晶圓分割成一個個的元件晶片,且在已被分割成一個個的元件晶片後,到達到成品厚度為止之時間中不會有一個個的元件晶片彼此相摩擦而產生損傷之情形之程度的時間。

Description

晶圓的加工方法 發明領域
本發明是有關於一種將在表面上有複數條切割道(分割預定線)形成為格子狀並且在由該複數條切割道所劃分出的複數個區域內形成有元件之晶圓,沿切割道分割之晶圓的分割方法。
發明背景
在半導體元件製造程序中,會藉由在大致圓板形狀之半導體晶圓的表面上排列成格子狀之被稱為切割道的分割預定線劃分出複數個區域,並在此所劃分出的區域內形成IC、LSI等之元件。並且,藉由將晶圓沿切割道切斷來分割形成有元件之區域以製造一個個的元件晶片。
作為沿上述之晶圓的切割道分割的方法,也已在嘗試中的有使用對於晶圓具有穿透性之波長的脈衝雷射光線,將聚光點對準用來分割之區域的內部而照射脈衝雷射光線之雷射加工方法。
若對於此採用雷射加工方法之分割方法的一例更具體地說明,亦即在形成有元件之晶圓表面配置保護構件,從晶圓之背面將對晶圓具有穿透性之波長的雷射光線 定位至對應於分割預定線的晶圓內部來照射,而沿分割預定線形成改質層後,將配置於晶圓之表面的保護構件側保持於保持機構上,並將晶圓之背面藉由磨削機構磨削而加工至目標成品厚度。藉由該加工除去改質層,並且將晶圓沿分割預定線分割成一個個的元件晶片(參照例如專利文獻1)。若依據該分割步驟,由於會在形成改質層之時形成裂隙,且之後,會實行藉由磨削機構進行之磨削而以該裂隙作為起點分割成一個個的元件晶片,所以變得可在無需採用另行施加外力等之機構的情形下有效率地分割。
先前技術文獻 專利文獻
專利文獻1:日本專利特許第3762409號公報
發明概要
前述改質層與裂隙,是藉由將脈衝雷射光線之聚光點對準晶圓基板之內部來照射之作法而創造出容易產生多光子吸収的條件,使其於晶圓基板內部改質而形成的。藉由在前述改質層形成過程中形成裂隙,且在磨削時存在裂隙,變得可在磨削晶圓基板之背面的磨削步驟中確實地分割成一個個的元件晶片。
然而,在背面之磨削時,如稍後所述,會使保持被加工物之晶圓的工作夾台旋轉,並且使具備磨削機構之磨削輪一邊接觸該晶圓一邊高速旋轉,且相對於被加工物 降下該磨削機構,藉此對於晶圓賦予強大之壓力與振動。並且,在磨削步驟之途中將晶圓分割成一個個的元件晶片後,到達到成品厚度為止磨削步驟長時間持續的情況下,會使已分割之元件晶片彼此受到上述壓力與振動而各自振動,並使相隣之元件晶片彼此相接觸、衝撞,而在元件晶片之側部及角部發生缺損,產生了對產品品質造成嚴重影響的問題。
為了處理該問題,所想到的有為了實行磨削加工而在晶圓之形成有元件的表面配置作為保護構件之保護膜時,使該保護膜硬化而牢固地固定成就算各元件被分割成一個個的晶片也不會振動。但,該保護膜在將晶圓之形成有元件的表面側保持於工作夾台等之保持構件上時,為了保護表面側之元件而要求要有作為用來吸收加工時之振動的一定程度之緩衝材之機能,並不宜在事前使其硬化至像是將分割後之各元件晶片牢固地固定之類的狀態。
因此,在由脈衝雷射光線進行之改質層與裂隙的形成後,實行磨削步驟而分割成一個個的元件晶片的情況下,不會有造成元件晶片之品質降低之情形的晶圓的加工方法上仍存有應當要解決的課題。
為了解決上述主要之技術課題,依據本發明,可提供一種晶圓的加工方法,其是將使複數個元件被分割預定線所劃分且形成於表面之晶圓分割成一個個的元件晶片,該晶圓的加工方法具備: 保護構件配置步驟,在晶圓之表面配置保護構件;改質層形成步驟,將對於配置有該保護構件之晶圓具有穿透性之波長的脈衝雷射光線的聚光點定位在晶圓之沿著分割預定線的內部,並且以預定之功率照射該脈衝雷射光線,以形成改質層與從該改質層朝表面、背面延伸之裂隙;及背面磨削步驟,在實施該改質層形成步驟後,將該保護構件側保持於工作夾台,且將晶圓之背面依預定之磨削條件以磨削輪磨削來分割成一個個的元件晶片,並且除去該改質層而磨削至達到目標成品厚度為止,在該改質層形成步驟中所設定之上述脈衝雷射光線的該預定之功率,是設定成下述功率:該功率是形成改質層及裂隙,使藉由在該背面磨削步驟中所設定之該預定的磨削條件進行磨削,而在達到目標成品厚度前可將該晶圓分割成一個個的元件晶片,且在已被分割成一個個的元件晶片後,到達到該目標成品厚度為止的時間是不會有一個個的元件晶片彼此相摩擦而產生損傷之情形的時間。
依據本發明之晶圓的加工方法,形成改質層及裂隙之脈衝雷射光線的功率是設定成:使在背面磨削步驟中磨削加工已開始後,在進行磨削的當前期間防止將晶圓分割成一個個的元件晶片,且在即將達到成品厚度前,在已被分割成一個個的元件晶片之後,到達到成品厚度為止之時間是不會有一個個的元件晶片彼此摩擦而產生損傷之情 形之程度的時間。
2‧‧‧矽晶圓
2’‧‧‧分割狀態之矽晶圓
2a‧‧‧表面
2b‧‧‧背面
21‧‧‧元件
22‧‧‧改質層
23‧‧‧裂隙
24‧‧‧分割預定線
3‧‧‧保護膠帶
30‧‧‧聚光器
31、40‧‧‧工作夾台
4‧‧‧磨削裝置
40a、42a、X、Y‧‧‧箭號
41‧‧‧吸附夾頭
42‧‧‧磨削輪
43‧‧‧磨削機構
a‧‧‧厚度
b‧‧‧範圍
c‧‧‧高度
F‧‧‧框架
T‧‧‧膠帶
圖1(a)-(b)是顯示保護構件配置步驟之概要立體圖。
圖2是顯示改質層形成步驟之實行狀態的概要立體圖。
圖3(a)-(b)是顯示在圖2所示之改質層形成步驟中所形成的改質層之剖面圖。
圖4是顯示晶圓之背面磨削時的晶圓保持步驟之立體圖。
圖5是顯示背面磨削步驟之概要立體圖。
圖6是顯示在背面磨削步驟中磨削加工完成狀態之概要立體圖。
圖7是顯示保護膠帶之剥離步驟的概要立體圖。
用以實施發明之形態
以下,針對本發明的晶圓之加工方法的較佳實施形態,參照附加圖式以作更詳細之說明。
(保護構件配置步驟)
在圖1中所示為貼附作為保護構件之例如由氯乙烯所構成之保護膠帶3(參照圖1(a)),而形成作為被加工物之晶圓(參照圖1(b))的步驟,該保護構件是用來保護藉由本發明之晶圓的加工方法所分割之矽晶圓2、與形成於該矽晶圓2的表面側2a之元件21。圖1所示之矽晶圓2,在表面2a上藉由形成為格子狀之複數條切割道(分割預定線)而劃分為複 數個區域,且在此劃分之區域內形成有IC、LSI等之該元件21。
(改質層形成步驟)
如上所述,若已在矽晶圓2之表面2a配置保護膠帶3的話,就可將前述矽晶圓2之保護膠帶3側定位並載置在如圖2所示之雷射加工裝置中的雷射加工用工作夾台31上。並且,使對於該矽晶圓2具有穿透性之波長的雷射光線從晶圓2之背面2b側將聚光點定位至晶圓2之對應於分割預定線的內部來進行照射,使工作夾台31朝箭號X所示之方向以後述的預定之加工進給速度加工進給,而形成改質層。
當遍及該分割預定線全長完成前述雷射加工後,即朝箭號Y所示之方向相對地將照射雷射光線之聚光器30依序分度進給,以一邊照射脈衝雷射光線一邊使工作夾台朝箭號X方向移動,而在對應於矽晶圓2上之在箭號Y方向上排列的朝第1方向伸長之分割預定線的晶圓之整個內部形成改質層。之後,使工作夾台31旋轉90度並對於在與第1方向正交之第2方向上伸長的分割預定線重複同樣的工序,使其在矽晶圓2之第1方向及第2方向上排列之分割預定線的整個內部產生改質層及裂隙。再者,在該實施形態中,由於是做成沿一條分割預定線形成已在高度(深度)方向上將位置錯開之3條改質層,所以該改質層形成步驟會在各分割預定線上將聚光點位置錯開3次而重複進行。
針對在前述改質層形成步驟中所形成之改質層,使用圖3(a)、(b)來進一步說明。圖3(a)是顯示將形成有 改質層之晶圓2沿分割預定線切斷之剖面的局部概要圖之圖式。矽晶圓2是以a=700μm之厚度形成,並形成為在下列區域中形成改質層:從以形成有元件21之表面2a作為基準而以180μm設定的範囲b中,將在後述之背面磨削步驟中的作為目標成品厚度而設定之從表面2a到以2點鏈線表示之高度為止的區域c=30μm排除之區域。圖3(b)是沿與圖3(a)所示之改質層22正交的方向切斷之A-A剖面的局部概要圖,且在沿分割預定線24之內部形成改質層22,並在該改質層22之上下形成裂隙23。
(背面磨削步驟)
前述矽晶圓2,在藉由前述改質層形成步驟而沿所有分割預定線24在晶圓內部形成改質層後,是如圖4所示,將該晶圓2之保護膠帶3側設成下側(亦即將背面2b側設成上表面來載置於磨削裝置之構成為可旋轉的工作夾台40上。該工作夾台40之上表面,是由可通氣之多孔陶瓷所形成的吸附夾頭41所構成,且可藉由圖未示之吸引機構進行吸引,以牢固地保持矽晶圓2。
在將矽晶圓2保持在工作夾台40上之後,如圖5所示,在使工作夾台40朝箭號40a所示之方向以例如300rpm旋轉時,使磨削機構43之磨削輪42朝箭號42a之方向以例如3500rpm旋轉,藉由使磨削輪42以1.0μm/s之速度下降並以磨削輪42的磨削磨石進行磨削,將矽晶圓2形成為前述之目標成品厚度(30μm)。當達到目標成品厚度時,改質層會全部被去除,而得到沿著藉由改質層形成步驟所形成之裂隙 23成為已將各元件21分割之狀態的矽晶圓2’,並結束背面磨削步驟(參照圖6)。
如以上,結束涉及矽晶圓2之分割的加工步驟。再者,將該晶圓之加工結束後的矽晶圓2’之背面2b側貼附到已保持在框架F的膠帶T上,形成一體化後,適宜地剝離保護膠帶3(參照圖7),並從膠帶T上拾取一個個的元件晶片21。
在此,本發明之發明人針對前述改質層形成步驟之結果所產生的改質層與裂隙的大小、及因其後所實行之背面磨削步驟產生的一個個之元件晶片的不良狀況之發生詳細地作了檢討的結果,發現到當藉由背面磨削步驟而使一個個之元件在較早之時間點被分割成晶片的話,會使已分割後之磨削時間變長,且在該分割後之背面磨削步驟中因相鄰之元件晶片彼此衝撞並相摩擦而產生與製品品質有關之損傷。並且,推導出下列的事項:被分割成各個元件晶片之時間點,會影響在改質層形成步驟中所形成之改質層及裂隙的大小,且該改質層及裂隙的大小,會受到脈衝雷射光線之每1脈衝的功率所支配。以下進行其詳細內容之說明。
在該改質層形成步驟中所使用之雷射加工的加工條件如以下所述。
光源:LD激發式Q開關Nd:YVO4脈衝雷射
波長:1342nm
重複頻率:60kHz
聚光點光斑:φ 1.0μm
加工進給速度:500mm/秒
被加工物:矽晶圓
厚度:700μm
改質層位置形成範圍:45μm~180μm(以矽晶圓2之表面2a作為基準,改質層以3層來形成)
背面磨削步驟中的磨削條件如上所述,是在使工作夾台40朝箭號40a所示之方向以例如300rpm旋轉時,使磨削機構43之磨削輪42朝箭號42a之方向以例如3500rpm旋轉,並使磨削輪42以1.0μm/s之速度下降。
以下所顯示的是在實行上述改質層形成步驟、背面磨削步驟時,僅變更脈衝雷射光線之功率,來驗證與由改質層形成步驟所形成之改質層23與裂隙24之顯現狀況、因背面磨削步驟所致之元件的不良情形發生狀況之關聯的結果。元件的良窳條件是在藉由磨削步驟達到目標成品厚度之狀態下,將晶圓2完全分割成一個個的元件晶片22,且已被分割之各元件晶片之側面及角部沒有因5μm以上的深度而形成缺損之情形視為OK條件,除此之外則視為NG。
*[功率]是脈衝雷射光線每1脈衝之功率並以[10-5J/1脈衝]作為單位,[改質層]及[裂隙]之長度以[μm]作為單位。再者,[改質層]之長度表示每1層之深度方向的高度。
如上所述,在脈衝雷射光線之功率在0.33[10-5J/1脈衝]以下時,就算實行背面磨削步驟並磨削至目標成品厚度,未能在可測量之範圍內產生改質層與裂隙,而無法將分割良好地做出。又,在0.5[10-5J/1脈衝]時,雖然形成有改質層,但未能在可測量範圍內形成裂隙,與前述同樣地無法將分割良好地做出。又,在改質層形成步驟中的脈衝雷射光線的功率比1.17[10-5J/1脈衝]更大的情況下,改質層與裂隙將變得比所需更大,並在背面磨削步驟之較早階段就以裂隙作為起點分割成一個個的元件晶片,所以在背面磨削步驟中的壓力與振動下會在一個個的元件晶片之側面及角部產生無法容許的缺損。
相較於此,可清楚看出的是,當脈衝雷射光線之功率在0.67~1.0[10-5J/1脈衝]的範圍內進行改質層之形成時,在背面磨削步驟中到即將達到目標成品厚度前能夠抑制被分割成一個個的元件晶片之情況,且在藉由改質層及 裂隙之作用而確實地被分割成一個個的元件晶片之後,到達到目標成品厚度為止之時間會成為沒有一個個的元件晶片彼此相摩擦而產生損傷之情形的程度的時間。從該驗證結果可理解到,藉由調節在改質層形成步驟中所使用之脈衝雷射光線的功率來調整改質層及裂隙之長度是可行的,且藉由調節該改質層及裂隙之長度,能夠調節在背面磨削步驟時之往一個個的元件層之分割時期,且藉由調節該分割時期,來控制在將矽晶圓2分割成一個個的元件晶片後,到達到目標成品厚度為止之時間會變得可能。
亦即,在對於矽晶圓之由脈衝雷射光線進行的改質層與裂隙的形成後,實行背面磨削步驟以分割成一個個的元件晶片且除去改質層時,藉由依在背面磨削步驟中所設定之該預定的磨削條件進行磨削,在達到目標成品厚度前可將該晶圓分割成一個個的元件晶片,且在已被分割成一個個的元件晶片後,到達到該目標成品厚度為止之時間會成為不會有一個個的元件晶片彼此相摩擦而產生損傷之情形的時間,以這樣的方式來設想改質層、裂隙之大小,並針對在改質層形成步驟中所照射之雷射光線,設定成為該改質層、裂隙之大小的脈衝雷射光線之功率,藉此,變得可解決前述之本發明之課題。
再者,依據前述之脈衝雷射光線的功率而改變之改質層及裂隙的長度、分割晶圓之時期、及已被分割成一個個之元件晶片後之達到成品厚度為止之時間之間的關係,會依據背面磨削步驟中的磨削機構之磨削條件(磨削機 構之旋轉速度及下降速度、目標成品厚度、矽晶圓之素材條件等)而改變。因此,在要實行磨削條件相異之背面磨削步驟的情況下,會將藉由在背面磨削步驟所實行之磨削條件而在達到目標成品厚度前可將該矽晶圓分割成一個個的元件晶片,且在已分割成一個個的元件晶片後,到達到該目標成品厚度為止之時間內不會有一個個的元件晶片彼此相摩擦而產生損傷之情形的改質層及裂隙長度事先藉由實驗等求出,且只要將在改質層形成步驟中所照射之脈衝雷射光線的功率設定成能夠形成該改質層、裂隙長度即可。
2‧‧‧矽晶圓
2a‧‧‧表面
2b‧‧‧背面
3‧‧‧保護膠帶
30‧‧‧聚光器
31‧‧‧工作夾台
X、Y‧‧‧箭號

Claims (1)

  1. 一種晶圓的加工方法,是將使複數個元件被分割預定線所劃分且形成於表面之晶圓分割成一個個的元件晶片,該晶圓的加工方法具備:保護構件配置步驟,在晶圓之表面配置保護構件;改質層形成步驟,將對於配置有該保護構件之晶圓具有穿透性之波長的脈衝雷射光線的聚光點定位在晶圓之沿著分割預定線的內部,並且以預定之功率照射該脈衝雷射光線,以形成改質層與從該改質層朝表面、背面延伸之裂隙;及背面磨削步驟,在實施該改質層形成步驟後,將該保護構件側保持於工作夾台上,且將晶圓之背面依預定的磨削條件以磨削輪磨削來分割成一個個的元件晶片,並且除去該改質層而磨削至達到目標成品厚度為止,在該改質層形成步驟中所設定之上述脈衝雷射光線的該預定之功率,是設定成下述功率:該功率是形成改質層及裂隙,使藉由在該背面磨削步驟中所設定之該預定的磨削條件進行磨削,而在達到目標成品厚度前可將該晶圓分割成一個個的元件晶片,且在已被分割成一個個的元件晶片後,到達到該目標成品厚度為止之時間是不會有一個個的元件晶片彼此相摩擦而產生損傷之情形的時間。
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