TW201637235A - High voltage light emitting diode and method for fabricating the same - Google Patents

Abstract

The present invention relates to a high voltage light emitting diode device and its preparation method. The high voltage light emitting diode device of the present invention comprises a substrate; an insulation layer disposed on the substrate and having a plurality of wells; and a plurality of epitaxial units respectively disposed in the plurality of wells and electrically connected in series with each other. Compared to known high voltage light emitting diode devices, the high voltage light emitting diode device of the present invention has a relatively simpler preparation process and relatively less problems such as in electrical connection, electrical disconnection, or uneasiness in electrical serial connection.

Description

High-voltage light-emitting diode device and preparation method thereof

The present invention relates to a high-voltage light-emitting diode device and a preparation method thereof, and more particularly to a high-voltage light-emitting diode device having a plurality of epitaxial cells respectively disposed in a plurality of grooves and connected in series with each other, and a preparation method thereof. The manufacturing process of the light-emitting diode device is relatively simple and has no problems such as wiring, disconnection or difficulty in series connection.

In recent years, the application of the light-emitting diode device has become more and more widespread, and the market demand for the light-emitting diode device has also progressed toward the higher-power light-emitting diode device, and the high-power light-emitting diode developed therein has been developed. The device is a high voltage light emitting diode device. Compared with other light-emitting diode devices, the high-voltage light-emitting diode device can reduce the loss and cost of energy conversion, and can also improve miniaturization development, design freedom, luminous stability, luminous efficiency, and device life.

In the process of the high-voltage light-emitting diode device of the present invention, as shown in FIG. 1A, a light-emitting diode epitaxial layer 4 is first formed on a substrate 1; then the light-emitting diode epitaxial layer 4 is cut to The lower substrate 1 is formed to form a plurality of trenches 6, as shown in FIG. 1B, thereby isolating the LED epitaxial cells 41; finally, as shown in FIG. 1C, each of the circuits 5 is designed to electrically connect each other. The light emitting diodes Body epitaxial unit 41.

In the above existing processes, the manufacturing process is complicated and there are many items to be determined. For example, when the LED epitaxial layer is cut to form a plurality of trenches, the substrate to be insulated under the trenches must be determined, and the width of the trenches must be determined to be too broad; if the cutting is incomplete As shown in FIG. 1D, the adjacent epitaxial cells are connected to each other, which may cause a short circuit of the fabricated high-voltage light-emitting diode device. In addition, when electrically connecting the light-emitting diode epitaxial units, it is necessary to determine that the interconnect wires are smoothly connected, not disconnected, and can be easily connected in series to ensure that the light-emitting area of the high-voltage light-emitting diode device is not reduced. In addition, the luminous efficiency of the high-voltage light-emitting diode device is affected, and the high-voltage light-emitting diode device is prevented from being damaged or broken due to problems such as wiring and disconnection under high voltage and high current driving.

In view of the above, the present invention provides a novel high-voltage light-emitting diode device and a method of fabricating the same, to form a high-voltage light-emitting diode device having a plurality of epitaxial cells respectively disposed in a plurality of grooves and connected in series with each other, and Compared with the conventional process, the high-voltage light-emitting diode device provided by the invention has a simple preparation method and has fewer problems such as wiring, disconnection or difficulty in series connection.

The main object of the present invention is to provide a high-voltage light-emitting diode device and a preparation method thereof. In particular, the present invention provides a high-voltage light-emitting diode having a plurality of epitaxial cells respectively disposed in a plurality of grooves and connected in series with each other. Body device, the device is prepared by first forming one of a plurality of grooves The insulating layer is on a substrate, and then a plurality of epitaxial cells are respectively formed in the grooves, and then the epitaxial cells are connected in series to replace the conventional process of the high-voltage light-emitting diode device, and to avoid It is known that the process of the high-voltage light-emitting diode device is connected, disconnected, and difficult to be connected in series.

In order to achieve the above object, the present invention provides a high voltage light emitting diode device including a substrate, an insulating layer disposed on the substrate and having a plurality of grooves, and a plurality of epitaxial cells respectively disposed on the substrate These grooves are in series with each other.

In addition, the present invention also provides a method for fabricating a high-voltage light-emitting diode device, comprising: providing a substrate; forming an insulating layer having a plurality of recesses on the substrate; forming a plurality of epitaxial cells respectively in the recesses Medium; and connecting the epitaxial units in series.

In the high-voltage light-emitting diode device of the present invention and the method of manufacturing the same, the substrate to be used is not particularly limited, and any substrate for a conventional high-voltage light-emitting diode device can be used. For example, the substrate can be any translucent semiconductor material. The substrate can also be alumina (sapphire), tantalum, tantalum carbide, gallium nitride, gallium phosphide, gallium arsenide, glass or quartz substrates. In the present invention, the substrate is preferably a sapphire substrate, a germanium substrate or a tantalum carbide substrate.

In the high-voltage light-emitting diode device of the present invention and the method of manufacturing the same, the material of the insulating layer used is not particularly limited, and any material for the insulating layer of the conventional high-voltage light-emitting diode device can be used. For example, the material of the insulating layer can be any suitable insulating material with high optical transparency. Composition. The material of the insulating layer may be a nitride such as tantalum nitride, a monooxide such as cerium oxide or aluminum oxide, or an oxynitride or the like. In the present invention, the material of the insulating layer is preferably cerium oxide.

In the method for fabricating the high-voltage light-emitting diode device of the present invention, the insulating layer is formed on the substrate, and the manner of use is not particularly limited, and any one of the high-voltage light-emitting diode devices used in the prior art forms the insulating layer. The manner of layering on the substrate can be used, for example, by coating method, printing method or deposition method. The deposition method may use chemical vapor deposition, such as plasma-assisted chemical vapor deposition, atomic layer chemical vapor deposition, vapor phase epitaxy, and physical vapor deposition, such as ion beam deposition. A method, a pulsed laser deposition method, or a reactive sputtering method to form the insulating layer on the substrate. In the present invention, the insulating layer is preferably formed on the substrate by coating.

In the method for fabricating the high-voltage light-emitting diode device of the present invention, the step of forming the insulating layer having the recesses includes: forming an insulating layer on the substrate, and etching the insulating layer to form a plurality of recesses, The etching method may be dry etching or wet etching. Generally, the etching method that can be used is a photo-etching process, wherein the etching process can firstly provide a patterned photoresist layer on the upper surface of the insulating layer through a yellow lithography process, and then use the patterned photoresist layer as an etch mask. The etching process is performed. Other etching methods that can be used are splash etching, ion beam etching, plasma etching, and the like. In the method for fabricating the high-voltage light-emitting diode device of the present invention, the step of forming the insulating layer having the recesses may further include: forming an insulating layer on the substrate, and patterning the insulating layer to form a plurality of concave groove. The method for preparing the high-voltage light-emitting diode device of the present invention can also directly form the insulating layer having the grooves on the substrate by a printing method.

In the high-voltage light-emitting diode device of the present invention and the method for fabricating the same, the insulating layer disposed on the substrate has a plurality of grooves, wherein each of the grooves has a length of 9 to 60 mils, preferably 20 to 50 mils. More preferably, it is 30 to 40 mils; each of the grooves has a width of 6 to 60 mils, preferably 15 to 50 mils, more preferably 25 to 40 mils; and each of the grooves has a depth of 1 to 15 μm, preferably 3 to 10 μm, more preferably 4.5 to 5.5 μm or 9 to 10 μm.

In the high-voltage light-emitting diode device of the present invention and the preparation method thereof, the material of the epitaxial unit used is not particularly limited, and any material for the epitaxial unit of the conventional high-voltage light-emitting diode device can be use. For example, the materials of the epitaxial cells may correspond to the desired wavelength of illumination. The materials of the epitaxial cells may be yttrium oxide, gallium nitride, indium gallium nitride, gallium arsenide, and the like, and combinations thereof. Each of the epitaxial cells has both an n-type and a p-type conductivity, that is, a different conductivity type.

In the method for fabricating the high-voltage light-emitting diode device of the present invention, the epitaxial cells are respectively formed in the grooves, and the manner of use is not particularly limited, and any one of the high-voltage light-emitting diodes used in the prior art is used. The manner in which the devices respectively form the epitaxial cells in the recesses can be used. In the present invention, the epitaxial cells are formed in the grooves in a deposition manner. The deposition method that can be used may be a chemical vapor deposition method such as a plasma-assisted chemical vapor deposition method, an atomic layer chemical vapor deposition method, or a vapor phase epitaxy method. The deposition method that can be used can also be Physical vapor deposition methods, such as ion beam deposition, pulsed laser deposition, and reactive sputtering.

In the high-voltage light-emitting diode device of the present invention and the method for fabricating the same, the heights of the epitaxial cells respectively disposed in the grooves may be 1 to 10 μm, preferably 7 to 10 μm. Each of the grooves has a depth greater than a height of each of the epitaxial units disposed therein.

In the high-voltage light-emitting diode device of the present invention and the preparation method thereof, when the material of the epitaxial cells used in the high-voltage light-emitting diode device of the present invention is gallium nitride, the gallium nitride epitaxial material The epitaxial cells have a mechanism of lateral growth, and the epitaxial cells are further disposed in the recesses and are disposed on the surface of the insulating layer, wherein the epitaxial layers are disposed on the surface of the insulating layer. The width of the crystal layer is from 0.5 to 5 μm, preferably from 1.5 to 3 μm.

In the high-voltage light-emitting diode device of the present invention and the method for fabricating the same, the distance between the grooves and the distance between the epitaxial cells are not particularly limited. The distance between the grooves and the distance between the epitaxial cells are related to the depth of the grooves and the height of the epitaxial cells disposed in the grooves. As long as the distance between the grooves and the distance between the epitaxial cells are such that the epitaxial cells are isolated, isolated and do not connect the epitaxial cells.

In the high-voltage light-emitting diode device of the present invention and the method for fabricating the same, the epitaxial cells respectively disposed in the recesses can be electrically connected to each other according to a desired circuit design, and the electrical connection manner is not particularly Limit, any kind of use The electrical connection of the conventional high-voltage light-emitting diode device can be used. For example, an electrically conductive structure such as a conductive wire or a conductive layer can be used for electrical connection. The conductive material of the conductive structure is generally preferably indium tin oxide having good light transmittance and conductivity. The electrical connection structure may use any suitable conductive material, generally a metal material such as gold, silver, copper, titanium, aluminum, chromium, platinum, or the like. The electrical connection structure may be connected in series or in parallel, or may form a connection form such as a circuit circuit or a Hui bridge to electrically connect the respective epitaxial units. In the present invention, the epitaxial cells are preferably electrically connected to each other in series.

In summary, the high-voltage light-emitting diode device provided by the present invention and the preparation method thereof are formed by forming an insulating layer having a plurality of grooves on a substrate, and then forming a plurality of epitaxial cells respectively in the concave portions. The epitaxial cells are then connected in series with each other to form a high-voltage light-emitting diode device having a plurality of epitaxial cells respectively disposed in a plurality of grooves and connected in series with each other, so that not only the high-voltage light-emitting diode provided by the present invention The polar body device and the preparation method thereof are simpler than the conventional high-voltage light-emitting diode device, and do not have the problems of connection, disconnection or difficulty in series connection of the conventional high-voltage light-emitting diode device.

1‧‧‧Substrate

2‧‧‧Insulation

3‧‧‧ Groove

4‧‧‧ epitaxial layer

41‧‧‧ Epitaxial unit

411‧‧‧ epitaxial unit

5‧‧‧ Circuitry

6‧‧‧ trench

l‧‧‧The length of the groove

w‧‧‧The width of the groove

d‧‧‧Deep depth

w ₁ ‧‧‧Width of the epitaxial unit formed on the surface of the insulating layer

1A to 1C are schematic flow diagrams showing a specific embodiment of a method for preparing a high voltage light emitting diode device according to a conventional method.

FIG. 1D is a schematic cross-sectional view of a conventional high voltage light emitting diode device.

2A to 2D are diagrams showing a method of preparing a high voltage light emitting diode device according to the present invention. A schematic flow chart of a specific implementation.

3 is a schematic view of another embodiment of a high voltage light emitting diode device in accordance with the present invention.

4 is a schematic view showing one embodiment of an insulating layer having a plurality of grooves in a high voltage light emitting diode device according to the present invention.

The present invention will be described below in conjunction with the accompanying drawings. The objects and advantages of the present invention will be readily understood by those skilled in the art from this disclosure. The present invention may be embodied or applied in various different forms without departing from the spirit and scope of the invention, and the scope of the invention should not be construed as being limited to the description and the drawings. Further, for the sake of clarity, the dimensions of the various elements and regions may be exaggerated in the drawings and elements that are not directly related to the present invention are omitted.

Example 1

2A to 2D are schematic diagrams showing a manufacturing process of an embodiment of a high-voltage light-emitting diode device provided by the present invention. As shown in FIG. 2A, the high-voltage light-emitting diode device of the present embodiment is formed by forming an insulating layer 2 on a substrate 1. The substrate that can be used may be a sapphire substrate, a tantalum substrate or a tantalum carbide substrate, however, in the present embodiment, the substrate used is a sapphire substrate. In the present embodiment, the material of the insulating layer used is yttrium oxide; however, the present invention is not limited thereto, and other insulating layer materials commonly used in the art may be used in the present invention. In the embodiment, the insulating layer 2 is formed on the substrate 1 by printing. The insulating layer 2 having a thickness of about 10 μm can be directly formed by printing. Next, as shown in FIG. 2B, a plurality of grooves 3 are formed in the insulating layer 2; here, a method for forming the insulating layer 2 having a plurality of grooves 3 may be an etching method known in the art, including Dry etching and wet etching.

In this embodiment, the insulating layer 2 is formed by a printing method and then formed into a plurality of grooves 3 by a patterning process; however, in other embodiments of the present invention, the mold can be directly formed by a printing method with a plurality of printing methods. An insulating layer 2 of a groove 3 pattern.

As shown in FIG. 3, in the high-voltage light-emitting diode device provided in the embodiment, one of the insulating layers 2 having a plurality of grooves 3 disposed on the substrate 1 is formed, and each of the grooves is formed. The length l of 3 is 9 to 60 mils, preferably 20 to 50 mils, more preferably 30 to 40 mils; each of the grooves 3 has a width w of 6 to 60 mils, preferably 15 to 50 mils, more preferably 25 to 40 mils. And the depth d of each of the grooves 3 is 1 to 15 μm, preferably 3 to 10 μm, more preferably 9 to 10 μm. Then, as shown in FIG. 2C, a plurality of epitaxial cells 41 are formed in the recesses 3, and the epitaxial cell materials used may be tantalum oxide, gallium nitride, indium gallium nitride, gallium arsenide, etc. In combination, in the embodiment, the epitaxial cell material used is gallium nitride. The epitaxial cells 41 are formed in the recesses 3 by methods known in the art (eg, deposition), and the heights of the epitaxial cells 41 respectively formed in the recesses 3 are 7 to 8 μm, and the depth of each of the grooves 3 is greater than the height of each of the epitaxial units 41 disposed therein. The distance between the grooves 3 and the distance between the epitaxial units 41 is sufficient for each of the protrusions The crystal unit 41 is isolated, isolated, and does not connect the epitaxial units 41 to each other. Finally, as shown in FIG. 2D, the epitaxial cells 41 are electrically connected to each other in series by the transmission circuit 5.

Example 2

FIG. 4 shows another embodiment of the high voltage light emitting diode device provided by the present invention. The high-voltage light-emitting diode device of this embodiment is prepared in the same manner as in the embodiment 1, except that the insulating layer 2 is formed by a coating method known in the art, and a plurality of grooves 3 are formed by etching. The depth d of each of the grooves 3 is 4.5 to 5.5 μm.

In the present embodiment, the epitaxial cell material used is gallium nitride, and the heights of the epitaxial cells 411 respectively formed in the recesses 3 are 7 to 8 μm. Since the depth of the groove 3 is smaller than the height of the epitaxial cell 411 to be formed, and because of the lateral growth of the gallium nitride, the epitaxial cells 411 are formed in the recesses 3, respectively. layer 2 is formed on the surface and extending in the insulating layer 2, which is formed on a surface of the plurality of epitaxial unit 2 of the insulating layer 411 of a width w ₁ is 1.5 to 3μm.

The spacing between the two recesses 3 is not particularly limited, and the width w ₁ of the epitaxial cells 411 formed on the surface of the insulating layer 2 is not particularly limited. The depth of the recess 3 and the epitaxial unit 411 are viewed from the end. Depending on the height, as long as the epitaxial cells 411 are not electrically connected.

In summary, the method for fabricating the high-voltage light-emitting diode device provided by the present invention has a simple process and is formed by first forming an insulation having a plurality of grooves. The layer, in addition to eliminating the subsequent epitaxial cell cutting step, can avoid the problem that the adjacent epitaxial cells are electrically connected due to incompletely cutting the epitaxial cells, resulting in a short circuit of the high-voltage LED device after the series connection. Thereby, the yield of the high-voltage light-emitting diode device produced can be further improved.

The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

1‧‧‧Substrate

2‧‧‧Insulation

41‧‧‧ Epitaxial unit

5‧‧‧ Circuitry

Claims (20)

A high-voltage light-emitting diode device includes: a substrate; an insulating layer disposed on the substrate and having a plurality of grooves; and a plurality of epitaxial cells respectively disposed in the grooves and connected in series with each other. The high-voltage light-emitting diode device according to claim 1, wherein the substrate is a sapphire substrate, a germanium substrate or a tantalum carbide substrate. The high-voltage light-emitting diode device according to claim 1, wherein the material of the insulating layer is ruthenium oxide. The high-voltage light-emitting diode device of claim 1, wherein each of the grooves has a length of 9 to 60 mils, each of the grooves has a width of 6 to 60 mils, and each of the grooves The depth is 3 to 10 μm. The high-voltage light-emitting diode device of claim 1, wherein each of the grooves has a depth greater than a height of each of the epitaxial units disposed therein. The high-voltage light-emitting diode device of claim 1, wherein the epitaxial cells are further disposed in the recesses and disposed on the surface of the insulating layer. The high-voltage light-emitting diode device according to claim 6, wherein the epitaxial layers disposed on the surface of the insulating layer have a width of 0.5 to 5 μm. The high-voltage light-emitting diode device of claim 6, wherein the material of the epitaxial cells is gallium nitride. A method for preparing a high voltage light emitting diode device, comprising: Providing a substrate; forming an insulating layer having a plurality of recesses on the substrate; forming a plurality of epitaxial cells in the recesses; and connecting the epitaxial cells in series. The method for preparing a high-voltage light-emitting diode device according to claim 9, wherein the substrate is a sapphire substrate, a germanium substrate or a tantalum carbide substrate. The method for preparing a high-voltage light-emitting diode device according to claim 9, wherein the material of the insulating layer is cerium oxide. The method for producing a high-voltage light-emitting diode device according to claim 9, wherein the insulating layer is formed on the substrate by coating. The method for fabricating a high voltage light emitting diode device according to claim 9, wherein the step of forming the insulating layer having the recesses comprises: forming an insulating layer on the substrate; and patterning the insulating layer The layers are formed to form a plurality of grooves. The method for preparing a high-voltage light-emitting diode device according to claim 9, wherein the insulating layer having the grooves is formed on the substrate by a printing method. The method for preparing a high-voltage light-emitting diode device according to claim 9, wherein each of the grooves has a length of 9 to 60 mils, each of the grooves has a width of 6 to 60 mils, and each of the grooves The depth of the groove is 3 to 10 μm. Preparation of a high-voltage light-emitting diode device as described in claim 9 The method wherein the epitaxial cells are formed in the recesses in a deposition manner. The method for preparing a high-voltage light-emitting diode device according to claim 9, wherein each of the grooves has a depth greater than a height of each of the epitaxial units disposed therein. The method for fabricating a high-voltage light-emitting diode device according to claim 9, wherein the epitaxial cells are further disposed in the recesses and are disposed on the surface of the insulating layer. . The method for preparing a high-voltage light-emitting diode device according to claim 19, wherein the epitaxial layers disposed on the surface of the insulating layer have a width of 0.5 to 5 μm. The method for preparing a high-voltage light-emitting diode device according to claim 19, wherein the material of the epitaxial cells is gallium nitride.