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TW201611914A - Method for cleaning semiconductor substrate and method for fabricating semiconductor device - Google Patents

Method for cleaning semiconductor substrate and method for fabricating semiconductor device

Info

Publication number
TW201611914A
TW201611914A TW103136768A TW103136768A TW201611914A TW 201611914 A TW201611914 A TW 201611914A TW 103136768 A TW103136768 A TW 103136768A TW 103136768 A TW103136768 A TW 103136768A TW 201611914 A TW201611914 A TW 201611914A
Authority
TW
Taiwan
Prior art keywords
cleaning
semiconductor substrate
semiconductor device
mixture
acid
Prior art date
Application number
TW103136768A
Other languages
Chinese (zh)
Other versions
TWI630034B (en
Inventor
Ming-Hsi Yeh
Sung-Hsun Wu
Chao-Cheng Chen
Syun-Ming Jang
Bo-Wei Chou
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/489,804 external-priority patent/US10005990B2/en
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW201611914A publication Critical patent/TW201611914A/en
Application granted granted Critical
Publication of TWI630034B publication Critical patent/TWI630034B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H01L21/02049—Dry cleaning only with gaseous HF
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a first mixture of ozone and one of an acid and a base, followed by a second mixture of ozone and the other one of the acid and the base. The cleaning mixtures may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface. The acid may be HF; the base may be NH4OH.
TW103136768A 2014-09-18 2014-10-24 Method for cleaning semiconductor substrate and method for fabricating semiconductor device TWI630034B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/489,804 2014-09-18
US14/489,804 US10005990B2 (en) 2013-02-01 2014-09-18 Cleaning method for semiconductor device fabrication

Publications (2)

Publication Number Publication Date
TW201611914A true TW201611914A (en) 2016-04-01
TWI630034B TWI630034B (en) 2018-07-21

Family

ID=55558732

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103136768A TWI630034B (en) 2014-09-18 2014-10-24 Method for cleaning semiconductor substrate and method for fabricating semiconductor device

Country Status (3)

Country Link
KR (4) KR20160033572A (en)
CN (2) CN112216598A (en)
TW (1) TWI630034B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102464636B1 (en) * 2018-02-07 2022-11-09 삼성전자주식회사 clean composition, cleaning apparatus and method for manufacturing semiconductor device
CN110671559A (en) * 2019-09-14 2020-01-10 江苏永力管道有限公司 Metal compression ring composite sealing filler device and manufacturing method thereof
CN115488095B (en) * 2022-08-11 2024-06-18 复旦大学 Ozone cleaning method and device for silicon wafer
CN115245926B (en) * 2022-08-30 2024-07-23 北京北方华创微电子装备有限公司 Method for processing parts

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656097A (en) * 1993-10-20 1997-08-12 Verteq, Inc. Semiconductor wafer cleaning system
JP3590470B2 (en) * 1996-03-27 2004-11-17 アルプス電気株式会社 Cleaning water generation method and cleaning method, and cleaning water generation device and cleaning device
DE69916728T2 (en) * 1998-08-28 2005-04-28 Mitsubishi Materials Corp. Method for cleaning a semiconductor substrate
WO2003065433A1 (en) * 2002-01-28 2003-08-07 Mitsubishi Chemical Corporation Liquid detergent for semiconductor device substrate and method of cleaning
US20050130420A1 (en) * 2003-12-10 2005-06-16 Huang Chih Y. Cleaning method using ozone DI process
DE102007030957A1 (en) * 2007-07-04 2009-01-08 Siltronic Ag Method for cleaning a semiconductor wafer with a cleaning solution
JP5586314B2 (en) * 2010-04-23 2014-09-10 芝浦メカトロニクス株式会社 Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
US8657963B2 (en) * 2011-09-22 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ backside cleaning of semiconductor substrate
US9881816B2 (en) * 2013-02-01 2018-01-30 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning composition and method for semiconductor device fabrication

Also Published As

Publication number Publication date
KR20180034368A (en) 2018-04-04
TWI630034B (en) 2018-07-21
CN105448661A (en) 2016-03-30
CN112216598A (en) 2021-01-12
KR20170033837A (en) 2017-03-27
KR20160033572A (en) 2016-03-28
KR20160054444A (en) 2016-05-16

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