TW201604617A - Device substrate and aligning method thereof - Google Patents
Device substrate and aligning method thereof Download PDFInfo
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- TW201604617A TW201604617A TW103125992A TW103125992A TW201604617A TW 201604617 A TW201604617 A TW 201604617A TW 103125992 A TW103125992 A TW 103125992A TW 103125992 A TW103125992 A TW 103125992A TW 201604617 A TW201604617 A TW 201604617A
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- 239000000758 substrate Substances 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000002093 peripheral effect Effects 0.000 claims abstract description 24
- 238000009413 insulation Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 238000003491 array Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 37
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000004873 anchoring Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004744 fabric Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 aluminum tin oxide Chemical compound 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WHXAGNPBEKUGSK-UHFFFAOYSA-N zinc antimony(3+) indium(3+) oxygen(2-) Chemical compound [Sb+3].[Zn+2].[O-2].[In+3].[O-2].[O-2].[O-2] WHXAGNPBEKUGSK-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
本發明是有關於一種基板及其配向方法,且特別是有關於一種元件基板及其配向方法。 The present invention relates to a substrate and an alignment method thereof, and more particularly to an element substrate and an alignment method thereof.
顯示面板包括元件基板、相對於元件基板的對向基板以及配置於元件基板與對向基板之間的顯示介質。以液晶顯示面板為例,顯示介質為多個液晶分子。顯示面板致能時,為使液晶分子的光軸能夠正確且快速地轉至指定方向,以提供對應畫素指定的穿透率,元件基板上通常設有一層配向膜。透過配向膜提供的錨定力(Anchoring force),多個液晶分子的光軸便可在顯示面板未致能時向指定方向傾斜,即液晶分子具有指定的預傾角(pre-tilt angle)。藉此,當顯示面板致能時,多個液晶分子的光軸便能夠正確且快速地轉至指定方向,進而提供使用者良好的影像品質。 The display panel includes an element substrate, an opposite substrate with respect to the element substrate, and a display medium disposed between the element substrate and the opposite substrate. Taking a liquid crystal display panel as an example, the display medium is a plurality of liquid crystal molecules. When the display panel is enabled, an alignment film is usually disposed on the element substrate in order to enable the optical axis of the liquid crystal molecules to be correctly and quickly rotated to a specified direction to provide a transmittance corresponding to the pixel. Through the anchoring force provided by the alignment film, the optical axes of the plurality of liquid crystal molecules can be tilted in a specified direction when the display panel is not enabled, that is, the liquid crystal molecules have a specified pre-tilt angle. Thereby, when the display panel is enabled, the optical axes of the plurality of liquid crystal molecules can be correctly and quickly turned to a specified direction, thereby providing the user with good image quality.
然而,元件基板的周邊區上需設置供測試人員測試元件基板之畫素陣列的測試接墊。一般而言,測試接墊相較於其周圍之膜層具有較高的高度,使得測試接墊與其周圍膜層之間存在一 高度差。當利用一配向工具在配向膜上進行一接觸式配向程序時,配向工具對配向膜之下壓力量便會受到測試接墊與其周圍膜層之間的高度差影響,從而造成元件基板之主動區與周邊區交界附近與主動區中心附近的配向膜具有之錨定力大小不一致,即產生配向不良(rubbing mura)的問題。 However, a test pad for the tester to test the pixel array of the element substrate is provided on the peripheral portion of the element substrate. In general, the test pad has a higher height than the film layer around it, such that there is a gap between the test pad and its surrounding film layer. The height difference. When a contact alignment process is performed on the alignment film by using an alignment tool, the pressure of the alignment tool under the alignment film is affected by the height difference between the test pad and the surrounding film layer, thereby causing the active area of the element substrate. The size of the anchoring force in the vicinity of the boundary with the peripheral zone and the center of the active zone is inconsistent, that is, the problem of rubbing mura occurs.
本發明提供一種元件基板,其能夠改善配向不良的現象。 The present invention provides an element substrate capable of improving the phenomenon of poor alignment.
本發明提供一種元件基板,包括具有主動區及周邊區的基板、位於主動區內的畫素陣列、位於基板上且與畫素陣列電性連接的多個訊號接墊以及位於周邊區內並與畫素陣列電性連接的至少一測試接墊。測試接墊包括位於周邊區的導電層、覆蓋導電層的絕緣層及位於絕緣層上的接觸圖案層。絕緣層具有至少一接觸開口及至少一溝槽。接觸開口暴露出導電層。接觸圖案層透過接觸開口而與導電層電性連接。部份接觸圖案層位於溝槽內。 The present invention provides a component substrate comprising a substrate having an active region and a peripheral region, a pixel array in the active region, a plurality of signal pads on the substrate and electrically connected to the pixel array, and a peripheral region and The pixel array is electrically connected to at least one test pad. The test pad includes a conductive layer in the peripheral region, an insulating layer covering the conductive layer, and a contact pattern layer on the insulating layer. The insulating layer has at least one contact opening and at least one groove. The contact opening exposes the conductive layer. The contact pattern layer is electrically connected to the conductive layer through the contact opening. A portion of the contact pattern layer is located within the trench.
本發明提供一種元件基板的配向方法,包括下列步驟:提供上述元件基板;在元件基板上形成配向膜,以覆蓋畫素陣列以及測試接墊;利用一配向工具在配向膜上進行一接觸式配向程序,配向工具係先與測試接墊重疊再與主動區重疊。 The invention provides a method for aligning an element substrate, comprising the steps of: providing the above-mentioned element substrate; forming an alignment film on the element substrate to cover the pixel array and the test pad; and performing a contact alignment on the alignment film by using an alignment tool The program, the alignment tool first overlaps the test pads and then overlaps with the active area.
基於上述,在本發明一實施例之元件基板中,測試接墊的接觸圖案層向絕緣層的溝槽延伸而使接觸圖案層的一部份位於絕緣層的溝槽內,此時部分的接觸圖案層舖設於溝槽的側壁上而 形成一緩坡。當利用一配向工具在鋪設於測試接墊及畫素陣列上的配向膜上進行一接觸式配向程序時,配向工具便能夠順著上述緩坡以穩定的下壓力量對主動區與周邊區交界附近的部份配向膜以及靠近主動區中心的部份配向膜進行配向。如此一來,元件基板上之各區域上的配向膜便能夠具有相近的錨定力,從而改善習知技術中配向不良的現象。 Based on the above, in the element substrate of one embodiment of the present invention, the contact pattern layer of the test pad extends toward the trench of the insulating layer such that a portion of the contact pattern layer is located in the trench of the insulating layer, and the partial contact at this time The pattern layer is laid on the sidewall of the trench Form a gentle slope. When a contact alignment process is performed on the alignment film laid on the test pad and the pixel array by using an alignment tool, the alignment tool can follow the gentle slope with a stable downforce to the vicinity of the active zone and the peripheral zone. Part of the alignment film and a portion of the alignment film near the center of the active region are aligned. As a result, the alignment films on the regions on the element substrate can have similar anchoring forces, thereby improving the poor alignment in the prior art.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.
10‧‧‧滾輪 10‧‧‧Roller
20‧‧‧布毛 20‧‧‧布毛
100、100A、100C~100F‧‧‧元件基板 100, 100A, 100C~100F‧‧‧ element substrate
110‧‧‧基板 110‧‧‧Substrate
110a‧‧‧主動區 110a‧‧‧active area
110b‧‧‧周邊區 110b‧‧‧ surrounding area
110c‧‧‧承載面 110c‧‧‧ bearing surface
120‧‧‧畫素陣列 120‧‧‧ pixel array
122、122A‧‧‧畫素結構 122, 122A‧‧‧ pixel structure
122a‧‧‧主動元件 122a‧‧‧Active components
122b‧‧‧畫素電極 122b‧‧‧ pixel electrodes
122b1‧‧‧畫素電極的分支 122b1‧‧‧ branches of pixel electrodes
122c‧‧‧共用電極 122c‧‧‧Common electrode
122c1‧‧‧共用電極的分支 122c1‧‧‧ branch of the common electrode
130‧‧‧訊號接墊 130‧‧‧Signal pads
140、140C、140F‧‧‧測試接墊 140, 140C, 140F‧‧‧ test pads
142、142D‧‧‧導電層 142, 142D‧‧‧ conductive layer
142a‧‧‧本體部 142a‧‧‧ Body Department
142b‧‧‧橋接電極 142b‧‧‧Bridge electrode
142c‧‧‧開口 142c‧‧‧ openings
144‧‧‧絕緣層 144‧‧‧Insulation
144a、144aA、144aE‧‧‧第一絕緣層 144a, 144aA, 144aE‧‧‧ first insulation
144b‧‧‧第二絕緣層 144b‧‧‧Second insulation
146‧‧‧接觸圖案層 146‧‧‧Contact pattern layer
146a‧‧‧邊緣 146a‧‧‧ edge
150‧‧‧驅動電路 150‧‧‧ drive circuit
160‧‧‧軟性電路板 160‧‧‧Soft circuit board
A-A’、D-D’‧‧‧剖線 A-A’, D-D’‧‧‧ cut line
DL‧‧‧資料線 DL‧‧‧ data line
Hc‧‧‧接觸開口 Hc‧‧ contact opening
Hp、HpA、HpD、HpE‧‧‧溝槽 Hp, HpA, HpD, HpE‧‧‧ trench
d1‧‧‧法線方向 D1‧‧‧ normal direction
d2‧‧‧方向 D2‧‧‧ direction
d3‧‧‧預定配向方向 d3‧‧‧Predetermined alignment direction
SL‧‧‧掃描線 SL‧‧‧ scan line
S1‧‧‧第一側壁 S1‧‧‧ first side wall
S2‧‧‧第二側壁 S2‧‧‧ second side wall
S3‧‧‧底部 S3‧‧‧ bottom
R‧‧‧配向工具 R‧‧‧ Alignment tool
PI‧‧‧配向膜 PI‧‧‧ alignment film
K‧‧‧元件基板局部 K‧‧‧ component substrate part
W1、W2、W3‧‧‧寬度 W1, W2, W3‧‧‧ width
圖1為本發明一實施例之元件基板的上視示意圖。 1 is a top plan view of a component substrate according to an embodiment of the present invention.
圖2A為圖1之元件基板局部K的放大示意圖。 2A is an enlarged schematic view showing a portion K of the element substrate of FIG. 1.
圖2B為根據圖2A的剖線A-A’所繪的元件基板局部的剖面示意圖。 Fig. 2B is a schematic cross-sectional view showing a part of the element substrate taken along the line A-A' of Fig. 2A.
圖2C為圖2A之測試接墊的導電層的上視示意圖。 2C is a top plan view of the conductive layer of the test pad of FIG. 2A.
圖3為本發明另一實施例之元件基板的畫素結構、資料線及掃描線的上視示意圖。 3 is a top plan view showing a pixel structure, a data line, and a scan line of a component substrate according to another embodiment of the present invention.
圖4為本發明另一實施例之元件基板局部的剖面示意圖。 4 is a cross-sectional view showing a portion of a component substrate according to another embodiment of the present invention.
圖5為本發明又一實施例之元件基板局部的上視示意圖。 Fig. 5 is a top plan view showing a part of a component substrate according to still another embodiment of the present invention.
圖6A為本發明又一實施例之元件基板局部的上視示意圖。 6A is a top plan view showing a part of a component substrate according to still another embodiment of the present invention.
圖6B為根據圖6A的剖線D-D’所繪的元件基板局部的剖面 示意圖。 Figure 6B is a partial cross-section of the element substrate depicted by the line D-D' of Figure 6A. schematic diagram.
圖7為本發明再一實施例之元件基板局部的的剖面示意圖。 Fig. 7 is a cross-sectional view showing a part of a component substrate according to still another embodiment of the present invention.
圖8為本發明一實施例之元件基板的上視示意圖。 FIG. 8 is a top plan view of a component substrate according to an embodiment of the present invention.
圖1為本發明一實施例之元件基板的上視示意圖。元件 基板100包括基板110、畫素陣列120、多個訊號接墊130以及至少一個測試接墊140。基板110具有主動區110a以及周邊區110b,周邊區110b與主動區110a連接且環繞主動區110a。畫素陣列120位於基板110的主動區110a內。多個訊號接墊130位於基板110的周邊區110b內且與畫素陣列120電性連接。至少一個測試接墊140位於基板110的周邊區110b內且與畫素陣列120電性連接。 在本實施例中,基板110的材質可為玻璃、石英、有機聚合物、或是不透光/反射材料(例如:導電材料、金屬、晶圓、陶瓷等)、或是其它可適用的材料。若使用導電材料或金屬製作基板110時,則基板110需具有一層絕緣層(未繪示),以避免搭載於基板110上的構件發生短路問題。 1 is a top plan view of a component substrate according to an embodiment of the present invention. element The substrate 100 includes a substrate 110, a pixel array 120, a plurality of signal pads 130, and at least one test pad 140. The substrate 110 has an active area 110a and a peripheral area 110b, and the peripheral area 110b is connected to the active area 110a and surrounds the active area 110a. The pixel array 120 is located within the active region 110a of the substrate 110. A plurality of signal pads 130 are located in the peripheral region 110b of the substrate 110 and are electrically connected to the pixel array 120. At least one test pad 140 is located in the peripheral region 110b of the substrate 110 and is electrically connected to the pixel array 120. In this embodiment, the material of the substrate 110 may be glass, quartz, organic polymer, or an opaque/reflective material (eg, conductive material, metal, wafer, ceramic, etc.), or other applicable materials. . When the substrate 110 is made of a conductive material or a metal, the substrate 110 needs to have an insulating layer (not shown) to prevent short-circuiting of the components mounted on the substrate 110.
在本實施例中,畫素陣列120包括陣列排列的多個畫素 結構122。每一畫素結構122包括至少一主動元件122a(例如:薄膜電晶體)以及與主動元件122a電性連接的至少一畫素電極122b。圖1繪示的畫素結構122是以包括一個主動元件122a以及一個畫素電極122b為示例。然而,本發明不限於此,每一畫素結 構包括的主動元件數量可選擇性地為多個;每一畫素結構包括的畫素電極數量可選擇性地為多個;同一畫素結構包括的主動元件數量及畫素電極數量可相同或不同。簡言之,每一畫素結構的畫素電極與主動元件的數量,以及每一畫素結構的畫素電極與主動元件之間的電性連接方式均可視實際需求做適當的設計。 In this embodiment, the pixel array 120 includes a plurality of pixels arranged in an array. Structure 122. Each pixel structure 122 includes at least one active component 122a (eg, a thin film transistor) and at least one pixel electrode 122b electrically coupled to the active component 122a. The pixel structure 122 illustrated in FIG. 1 is exemplified by an active element 122a and a pixel electrode 122b. However, the invention is not limited to this, each pixel knot The number of active components included in the structure may be multiple; the number of pixel electrodes included in each pixel structure may be selectively multiple; the number of active components and the number of pixel electrodes in the same pixel structure may be the same or different. In short, the number of pixel electrodes and active components of each pixel structure, and the electrical connection between the pixel electrodes and the active components of each pixel structure can be appropriately designed according to actual needs.
在本實施例中,畫素陣列120可進一步包括多條資料線 DL、多條掃描線SL、驅動電路150(例如驅動晶片)以及軟性電路板(flexible printed circuit,FPC)160。多條資料線DL與對應的畫素結構122電性連接。詳言之,每一資料線DL與對應的多個主動元件122a的源極電性連接。多條掃描線SL與對應的畫素結構122電性連接,且與資料線DL相交。詳言之,每一掃描線SL與對應的多個主動元件122a的閘極電性連接,且掃描線SL的延伸方向可與資料線DL的延伸方向垂直。驅動電路150位於周邊區110b且位於畫素陣列120與多個訊號接墊130之間。多個訊號接墊130可透過驅動電路150與畫素陣列120電性連接。驅動電路150與多條資料線DL以及多條掃描線SL的至少一者電性連接,以驅動畫素陣列120。在本實施例中,驅動電路150可同時與多條資料線DL以及多條掃描線SL電性連接。然而,本發明不限於此,在其他實施例中,驅動電路150亦可與多條資料線DL或多條掃描線SL電性連接。軟性電路板160是用以與多個訊號接墊130接合(bounding)。訊號接墊130與軟性電路板160接合後,軟性電路板160覆蓋在多個訊號接墊130上,並與訊號接墊130電性連接。 In this embodiment, the pixel array 120 may further include multiple data lines. DL, a plurality of scanning lines SL, a driving circuit 150 (for example, a driving chip), and a flexible printed circuit (FPC) 160. The plurality of data lines DL are electrically connected to the corresponding pixel structure 122. In detail, each data line DL is electrically connected to the source of the corresponding plurality of active elements 122a. The plurality of scan lines SL are electrically connected to the corresponding pixel structure 122 and intersect the data line DL. In detail, each scan line SL is electrically connected to the gates of the corresponding plurality of active elements 122a, and the extending direction of the scan lines SL may be perpendicular to the extending direction of the data lines DL. The driving circuit 150 is located in the peripheral region 110b and between the pixel array 120 and the plurality of signal pads 130. The plurality of signal pads 130 can be electrically connected to the pixel array 120 through the driving circuit 150. The driving circuit 150 is electrically connected to at least one of the plurality of data lines DL and the plurality of scanning lines SL to drive the pixel array 120. In this embodiment, the driving circuit 150 can be electrically connected to the plurality of data lines DL and the plurality of scanning lines SL at the same time. However, the present invention is not limited thereto. In other embodiments, the driving circuit 150 may be electrically connected to the plurality of data lines DL or the plurality of scanning lines SL. The flexible circuit board 160 is for engaging with a plurality of signal pads 130. After the signal pad 130 is bonded to the flexible circuit board 160, the flexible circuit board 160 covers the plurality of signal pads 130 and is electrically connected to the signal pad 130.
測試接墊140位於訊號接墊130旁。在本實施例中,測 試接墊140與多個訊號接墊130亦可分別配置在彼此隔開的不同二列上。測試接墊140可選擇性地設置在基板110的左下角。然而,本發明不限於此,測試接墊140設置的位置可視實際的元件基板100佈局(layout)及製程需求而定。在其他實施例中,測試接墊140亦可選擇性地設置在基板110的左上角、右上角、右下角或基板110的側邊。此外,測試接墊140與多個訊號接墊130間的位置關係亦可做圖1以外的其他適當設計,將於後續實施例中,舉例說明。 The test pad 140 is located beside the signal pad 130. In this embodiment, the measurement The test pad 140 and the plurality of signal pads 130 may also be disposed on different two columns spaced apart from each other. The test pads 140 are selectively disposed at the lower left corner of the substrate 110. However, the present invention is not limited thereto, and the position at which the test pads 140 are disposed may depend on the actual layout of the element substrate 100 and the process requirements. In other embodiments, the test pads 140 may also be selectively disposed at the upper left corner, the upper right corner, the lower right corner of the substrate 110 or the sides of the substrate 110. In addition, the positional relationship between the test pad 140 and the plurality of signal pads 130 can also be other suitable designs other than that of FIG. 1, which will be exemplified in the following embodiments.
測試接墊140是供測試人員輸入一測試訊號至畫素陣列 120,以測試畫素陣列120的功能是否正常。一般而言,測試人員是利用肉眼及手將具有測試訊號的探針與測試接墊140電性接觸,以將測試訊號輸入至畫素陣列120。為使測試人員能夠容易地執行上述測試動作,測試接墊140具有相當的尺寸。舉例而言,測試接墊140的尺寸大於每一訊號接墊130的尺寸。更進一步地說,每一測試接墊140之面積可為每一訊號接墊130之面積的1倍至10倍,但本發明不以此為限。 The test pad 140 is for the tester to input a test signal to the pixel array. 120 to test whether the function of the pixel array 120 is normal. In general, the tester electrically contacts the test pad 140 with the test signal by the naked eye and the hand to input the test signal to the pixel array 120. To enable the tester to easily perform the test actions described above, the test pads 140 are of comparable size. For example, the size of the test pads 140 is greater than the size of each of the signal pads 130. Furthermore, the area of each test pad 140 may be 1 to 10 times the area of each signal pad 130, but the invention is not limited thereto.
當元件基板100做為顯示面板的一構件時,為配向顯示 面板中的顯示介質(例如液晶),元件基板100可進一步包括配向膜PI,以覆蓋畫素陣列120、訊號接墊130以及測試接墊140。值得一提的是,由於測試接墊140具有特殊的結構設計,因此當利用配向工具(例如:滾輪及鋪設於滾輪上的布毛)在配向膜PI上進行 接觸式配向程序時,即使測試接墊140具有相當的尺寸,位於畫素陣列120邊緣或中心的配向膜PI皆能夠被均勻地配向,而使包括元件基板100的顯示面板不易發生習知技術中配向不良的問題。以下將配合圖示具體說明測試接墊140的特殊結構及其能夠改善配向不良問題的機制。 When the element substrate 100 is used as a component of the display panel, it is an alignment display The display substrate (eg, liquid crystal) in the panel, the component substrate 100 may further include an alignment film PI to cover the pixel array 120, the signal pad 130, and the test pad 140. It is worth mentioning that, since the test pad 140 has a special structural design, when using an alignment tool (for example, a roller and a cloth laid on the roller), it is performed on the alignment film PI. In the contact alignment process, even if the test pads 140 have a considerable size, the alignment film PI located at the edge or the center of the pixel array 120 can be uniformly aligned, and the display panel including the element substrate 100 is less likely to occur in the prior art. Poor alignment. The specific structure of the test pad 140 and its mechanism for improving the problem of poor alignment will be specifically described below with reference to the drawings.
圖2A為圖1之元件基板局部K的放大示意圖。圖2B為 根據圖2A的剖線A-A’所繪的元件基板局部的剖面示意圖。請參照圖2A及圖2B,測試接墊140包括位於周邊區110b(標示於圖2B)的導電層142、覆蓋導電層142的絕緣層144以及位於絕緣層144上的接觸圖案層146。導電層142、絕緣層144以及接觸圖案層146沿著基板110之承載面110c的法線方向d1依序堆疊。 2A is an enlarged schematic view showing a portion K of the element substrate of FIG. 1. Figure 2B is A schematic cross-sectional view of a portion of the element substrate according to the line A-A' of Fig. 2A. 2A and 2B, the test pad 140 includes a conductive layer 142 at the peripheral region 110b (shown in FIG. 2B), an insulating layer 144 covering the conductive layer 142, and a contact pattern layer 146 on the insulating layer 144. The conductive layer 142, the insulating layer 144, and the contact pattern layer 146 are sequentially stacked along the normal direction d1 of the bearing surface 110c of the substrate 110.
測試接墊140是利用導電層142將接觸圖案層146接收 的測試訊號傳遞至畫素陣列120(繪於圖1)。換言之,導電層142是電性連接於接觸圖案層146與畫素陣列120之間。接觸圖案層146接收測試訊號後,測試訊號可依序經由接觸圖案層146及導電層142進而傳遞至畫素陣列120。在本實施例中,為將測試接墊140的製程與畫素陣列120的製程整合在一起,導電層142與畫素陣列120之主動元件122a(繪於圖1)的閘極可選擇地為同一膜層所形成,但本發明不以此為限。導電層142一般是使用金屬材料,然而,本發明不限於此,根據其他實施例,導電層142亦可以使用其他導電材料,例如:合金、金屬材料的氮化物、金屬材料的氧化物、金屬材料的氮氧化物、或是金屬材料與其它導電材料的 堆疊層。 The test pad 140 receives the contact pattern layer 146 by using the conductive layer 142. The test signal is passed to the pixel array 120 (shown in Figure 1). In other words, the conductive layer 142 is electrically connected between the contact pattern layer 146 and the pixel array 120. After the contact pattern layer 146 receives the test signal, the test signal can be sequentially transferred to the pixel array 120 via the contact pattern layer 146 and the conductive layer 142. In this embodiment, in order to integrate the process of the test pad 140 with the process of the pixel array 120, the gate of the conductive layer 142 and the active component 122a of the pixel array 120 (shown in FIG. 1) may alternatively be The same film layer is formed, but the invention is not limited thereto. The conductive layer 142 is generally made of a metal material. However, the present invention is not limited thereto. According to other embodiments, the conductive layer 142 may also use other conductive materials, such as alloys, nitrides of metal materials, oxides of metal materials, and metal materials. NOx, or metal materials and other conductive materials Stack layers.
圖2C為圖2A之測試接墊的導電層142的上視示意圖。請參照圖2A、圖2B及圖2C,在本實施例中,導電層142包括本體部142a(標示於圖2C)及電性連接於本體部142a與畫素陣列120(繪於圖1)之間的至少一個橋接電極142b(標示於圖2C)。至少一橋接電極142b之數量可為一個或多個。每一橋接電極142b在垂直於承載面110c的法線方向d1的方向d2上的寬度W1小於本體部142a在垂直於法線方向d1的方向d2上的寬度W2。更進一步地說,每一橋接電極142b在垂直於承載面110c的法線方向d1的方向d2上的寬度W1小於或等於訊號接墊130(繪於圖1)在方向d2上的寬度W3(繪於圖1)。本體部142a與接觸圖案層146以及接觸開口Hc重疊。本體部142a可與接觸圖案層146直接接觸。橋接電極142b電性連接於本體部142a與畫素陣列(繪於圖1)之間。接觸圖案層146的邊緣146a(標示於圖2A)位於橋接電極142b上。從另一角度而言,如圖2C所示,導電層142可選擇性地具有多個開口142c。多個開口142c排列為一環狀結構。導電層142的本體部142a在多個開口142c圍繞的範圍以內。每一橋接電極142b位於本體部142a外以及相鄰二開口142c之間且電性接觸於本體部142a。 2C is a top plan view of the conductive layer 142 of the test pad of FIG. 2A. Referring to FIG. 2A, FIG. 2B and FIG. 2C, in the embodiment, the conductive layer 142 includes a body portion 142a (shown in FIG. 2C) and is electrically connected to the body portion 142a and the pixel array 120 (shown in FIG. 1). At least one bridge electrode 142b (shown in Figure 2C). The number of at least one bridging electrode 142b may be one or more. The width W1 of each of the bridge electrodes 142b in the direction d2 perpendicular to the normal direction d1 of the bearing surface 110c is smaller than the width W2 of the body portion 142a in the direction d2 perpendicular to the normal direction d1. Furthermore, the width W1 of each of the bridge electrodes 142b in the direction d2 perpendicular to the normal direction d1 of the bearing surface 110c is less than or equal to the width W3 of the signal pad 130 (drawn in FIG. 1) in the direction d2 (painted Figure 1). The body portion 142a overlaps the contact pattern layer 146 and the contact opening Hc. The body portion 142a may be in direct contact with the contact pattern layer 146. The bridge electrode 142b is electrically connected between the body portion 142a and the pixel array (shown in FIG. 1). The edge 146a of the contact pattern layer 146 (shown in Figure 2A) is located on the bridge electrode 142b. From another perspective, as shown in FIG. 2C, the conductive layer 142 can selectively have a plurality of openings 142c. The plurality of openings 142c are arranged in a ring structure. The body portion 142a of the conductive layer 142 is within a range surrounded by the plurality of openings 142c. Each of the bridge electrodes 142b is located outside the body portion 142a and between the adjacent two openings 142c and is in electrical contact with the body portion 142a.
請參照圖2A及圖2B,絕緣層144具有至少一接觸開口Hc。接觸開口Hc暴露出導電層142的本體部142a。接觸圖案層146填入接觸開口Hc而與導電層142的本體部142a電性連接。 特別是,絕緣層144具有至少一溝槽Hp。接觸圖案層146的一部份係位於溝槽Hp內。如圖2B所示,接觸圖案層146可遮蔽導電層142且超出導電層142的本體部142a,亦即接觸圖案層146完全遮蔽本體部142a。更進一步地說,每一溝槽Hp具有第一側壁S1、相對於第一側壁S1的第二側壁S2以及連接第一側壁S1與第二側壁S2的底部S3。第一側壁S1較第二側壁S2靠近接觸開口Hc。接觸圖案層146由接觸開口Hc向外延伸,以覆蓋絕緣層144的第一側壁S1且至少局部地覆蓋溝槽Hp的底部S3,但本實施例不侷限於此,接觸圖案層146亦可完全覆蓋溝槽Hp的底部S3。 換言之,接觸圖案層146不覆蓋每一溝槽Hp的第二側壁S2而局部地暴露出每一溝槽Hp的底部S3。接觸圖案層146之至少部份的邊緣146a是位於溝槽Hp內。 Referring to FIGS. 2A and 2B, the insulating layer 144 has at least one contact opening Hc. The contact opening Hc exposes the body portion 142a of the conductive layer 142. The contact pattern layer 146 is filled in the contact opening Hc to be electrically connected to the body portion 142a of the conductive layer 142. In particular, the insulating layer 144 has at least one trench Hp. A portion of the contact pattern layer 146 is located within the trench Hp. As shown in FIG. 2B, the contact pattern layer 146 can shield the conductive layer 142 and beyond the body portion 142a of the conductive layer 142, that is, the contact pattern layer 146 completely shields the body portion 142a. Further, each of the trenches Hp has a first sidewall S1, a second sidewall S2 opposite to the first sidewall S1, and a bottom S3 connecting the first sidewall S1 and the second sidewall S2. The first side wall S1 is closer to the contact opening Hc than the second side wall S2. The contact pattern layer 146 extends outward from the contact opening Hc to cover the first sidewall S1 of the insulating layer 144 and at least partially cover the bottom S3 of the trench Hp, but the embodiment is not limited thereto, and the contact pattern layer 146 may also be completely Covering the bottom S3 of the groove Hp. In other words, the contact pattern layer 146 does not cover the second side wall S2 of each of the trenches Hp to partially expose the bottom portion S3 of each of the trenches Hp. The edge 146a of at least a portion of the contact pattern layer 146 is located within the trench Hp.
值得注意的是,如圖2B所示,當接觸圖案層146向絕緣 層144的溝槽Hp延伸而使接觸圖案層146的一部份位於溝槽Hp之內時,部分的接觸圖案層146舖設於溝槽Hp的第一側壁S1上而形成一緩坡。藉此,當利用配向工具R在配向膜PI上進行一接觸式配向程序(例如:令配向工具R的布毛20以滾輪10的中心軸為轉動中心轉動;接著,令配向膜PI與布毛20接觸且下壓配向工具R;然後,令搭載配向膜PI的元件基板100沿著一預定配向方向d3移動,以使配向工具R先與位於周邊區110b的測試接墊140重疊後再與主動區110a重疊)時,配向工具R便能夠順著上述緩坡以穩定的下壓力量對主動區110a與周邊區110b交界附近的 部份配向膜PI以及靠近主動區110a中心的部份配向膜PI進行配向。如此一來,畫素陣列120(繪於圖1)邊緣上的配向膜PI(即主動區110a與周邊區110b交界附近的配向膜PI)以及畫素陣列120中心附近的配向膜PI(即靠近主動區110a中心的配向膜PI)便能夠具有相近的錨定力,從而配向不良的發生機率或配向不良的嚴重程度能夠降低。 It is worth noting that, as shown in FIG. 2B, when the contact pattern layer 146 is insulated When the trench Hp of the layer 144 is extended such that a portion of the contact pattern layer 146 is located within the trench Hp, a portion of the contact pattern layer 146 is laid on the first sidewall S1 of the trench Hp to form a gentle slope. Thereby, when the alignment tool R is used to perform a contact alignment process on the alignment film PI (for example, the cloth 20 of the alignment tool R is rotated with the central axis of the roller 10 as a center of rotation; then, the alignment film PI and the cloth are made 20 contacting and pressing the alignment tool R; then, moving the component substrate 100 carrying the alignment film PI along a predetermined alignment direction d3, so that the alignment tool R first overlaps with the test pad 140 located in the peripheral region 110b, and then actively When the region 110a overlaps, the alignment tool R can follow the gentle slope with a steady downforce to the vicinity of the boundary between the active region 110a and the peripheral region 110b. Part of the alignment film PI and a portion of the alignment film PI near the center of the active region 110a are aligned. As a result, the alignment film PI on the edge of the pixel array 120 (shown in FIG. 1) (ie, the alignment film PI near the boundary between the active region 110a and the peripheral region 110b) and the alignment film PI near the center of the pixel array 120 (ie, close to each other) The alignment film PI) at the center of the active region 110a can have a similar anchoring force, so that the probability of occurrence of poor alignment or the severity of poor alignment can be reduced.
請參照圖2B,在本實施例中,為整合測試接墊140與畫 素陣列120(繪於圖1)的製程,絕緣層144可選擇性地包括第一絕緣層144a以及第二絕緣層144b。第一絕緣層144a位於導電層142上。第二絕緣層144b位於第一絕緣層144a上的。導電層142、第一絕緣層144a、第二絕緣層144b、接觸圖案層146沿著遠離基板110的方向d1依序堆疊。第一絕緣層144a的製作可與畫素陣列120之主動元件122a的閘絕緣層(未繪示)的製作整合在一起。換言之,第一絕緣層144a可選擇性地與位於主動元件122a的閘極與通道之間的閘絕緣層為同一膜層。第二絕緣層144b的製作可與位於畫素電極122b與主動元件122a的汲極之間的平坦層(未繪示)的製作整合在一起。換言之,第二絕緣層144b可選擇性地與平坦層(Passivation)屬於同一膜層。需說明的是,上述絕緣層144的多層結構以及此多層結構與閘絕緣層及平坦層之間的關係是用以舉例說明本發明而非用以限制本發明。在其他實施例中,絕緣層144不一定要為多層結構,且絕緣層144與位於主動區110a上之構件的關係亦可視實際的需求作適當的設計。在本實施例中,第一絕 緣層144a及第二絕緣層144b係分別圖案化(舉例係為不同的蝕刻程序),以構成溝槽Hp,然本實施例不以此為限,第一絕緣層144a及第二絕緣層144b亦可同時圖案化以形成Hp。 Please refer to FIG. 2B. In this embodiment, the test pad 140 and the drawing are integrated. The insulating layer 144 may selectively include a first insulating layer 144a and a second insulating layer 144b. The first insulating layer 144a is located on the conductive layer 142. The second insulating layer 144b is located on the first insulating layer 144a. The conductive layer 142, the first insulating layer 144a, the second insulating layer 144b, and the contact pattern layer 146 are sequentially stacked in a direction d1 away from the substrate 110. The fabrication of the first insulating layer 144a may be integrated with the fabrication of a gate insulating layer (not shown) of the active component 122a of the pixel array 120. In other words, the first insulating layer 144a is selectively the same film layer as the gate insulating layer between the gate and the channel of the active device 122a. The fabrication of the second insulating layer 144b can be integrated with the fabrication of a planar layer (not shown) between the pixel electrode 122b and the drain of the active device 122a. In other words, the second insulating layer 144b may selectively belong to the same film layer as the flat layer. It should be noted that the multilayer structure of the insulating layer 144 and the relationship between the multilayer structure and the gate insulating layer and the flat layer are used to illustrate the invention and are not intended to limit the present invention. In other embodiments, the insulating layer 144 does not have to be a multi-layer structure, and the relationship between the insulating layer 144 and the members on the active region 110a can be appropriately designed according to actual needs. In this embodiment, the first The edge layer 144a and the second insulating layer 144b are respectively patterned (for example, different etching processes) to form the trench Hp. However, the embodiment does not limit the first insulating layer 144a and the second insulating layer 144b. It can also be patterned simultaneously to form Hp.
在本實施例中,絕緣層144的材料可為無機材料(例如: 氧化矽、氮化矽、氮氧化矽、或上述至少二種材料的堆疊層)、有機材料或上述之組合。接觸圖案層146之材料包括金屬氧化物,例如是銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、或其它合適的氧化物、或者是上述至少二者之堆疊層,但本發明不以此為限。在本實施例中,接觸圖案層146與圖1之畫素電極122b的製程可選擇性地整合在一起。換言之,接觸圖案層146可與畫素電極122b可為同一膜層所形成。然而,本發明不限於此,圖3為本發明另一實施例之元件基板的畫素結構、資料線及掃描線的上視示意圖。在圖3的實施例中,畫素結構122A除了主動元件122a、畫素電極122b之外更包括共用電極122c。 共用電極122c的分支122c1與畫素電極122b的分支122b1可交替排列。接觸圖案層146亦可選擇性地與共用電極122c、或同時與共用電極122c及畫素電極122b為同一膜層所形成。在圖3之實施例中,共用電極122c與畫素電極122b實質上可共平面。簡言之,畫素結構122A可為共面切換(In-Plane Switching,IPS)模式的畫素結構。然而,本發明不限於此,在其他實施例中,共用電極122c與畫素電極122b亦可不共平面。簡言之,畫素結構亦可為邊緣場切換(Fringe-Field Switching,FFS)模式的畫素結構,而 接觸圖案層146可選擇性地與共用電極122c和畫素電極122b中與基板110之間的最大距離較大的一者為同一膜層所形成。 In this embodiment, the material of the insulating layer 144 may be an inorganic material (for example: Cerium oxide, tantalum nitride, niobium oxynitride, or a stacked layer of at least two of the above materials, an organic material, or a combination thereof. The material of the contact pattern layer 146 includes a metal oxide such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium antimony zinc oxide, or other suitable oxide, or at least The stacked layers of the two, but the invention is not limited thereto. In the present embodiment, the process of contacting the pattern layer 146 with the pixel electrode 122b of FIG. 1 can be selectively integrated. In other words, the contact pattern layer 146 may be formed of the same film layer as the pixel electrode 122b. However, the present invention is not limited thereto, and FIG. 3 is a top view of a pixel structure, a data line, and a scanning line of the element substrate according to another embodiment of the present invention. In the embodiment of FIG. 3, the pixel structure 122A further includes a common electrode 122c in addition to the active element 122a and the pixel electrode 122b. The branch 122c1 of the common electrode 122c and the branch 122b1 of the pixel electrode 122b are alternately arranged. The contact pattern layer 146 may also be formed by selectively forming the same film layer as the common electrode 122c or the common electrode 122c and the pixel electrode 122b. In the embodiment of FIG. 3, the common electrode 122c and the pixel electrode 122b are substantially coplanar. In short, the pixel structure 122A can be a pixel structure of an In-Plane Switching (IPS) mode. However, the present invention is not limited thereto. In other embodiments, the common electrode 122c and the pixel electrode 122b may not be coplanar. In short, the pixel structure can also be a pixel structure of the Fringe-Field Switching (FFS) mode, and The contact pattern layer 146 is selectively formed of the same film layer as one of the common electrode 122c and the largest distance between the pixel electrode 122b and the substrate 110.
請再參照圖2B,在本實施例中,溝槽Hp可選擇性地貫 穿第一、二絕緣層144a、144b而暴露出基板110。換言之,第一、二絕緣層144a、144b分別具有相重合的二開口,而溝槽Hp是由第一、二絕緣層144a、144b之相重合的二開口構成的。然而,本發明不限於此,圖4為本發明另一實施例之元件基板局部的剖面示意圖。圖4之元件基板100A與圖2B之元件基板100相似,因此相同或相對應的元件以相同或相對應的標號表示。在圖4的實施例中,第一絕緣層144aA在主動區110a與周邊區110b的交界附近可不具開口。溝槽HpA可由第二絕緣層144b的單一開口構成,而溝槽HpA暴露出第一絕緣層144aA。元件基板100A具有與元件基板100相似的優點及功效,於此便不再重述。 Referring again to FIG. 2B, in the embodiment, the trench Hp is selectively permeable. The first and second insulating layers 144a, 144b are worn to expose the substrate 110. In other words, the first and second insulating layers 144a, 144b respectively have two openings that coincide, and the trench Hp is composed of two openings in which the first and second insulating layers 144a, 144b coincide. However, the present invention is not limited thereto, and FIG. 4 is a schematic cross-sectional view showing a part of the element substrate of another embodiment of the present invention. The element substrate 100A of FIG. 4 is similar to the element substrate 100 of FIG. 2B, and therefore the same or corresponding elements are denoted by the same or corresponding reference numerals. In the embodiment of FIG. 4, the first insulating layer 144aA may have no openings near the boundary between the active region 110a and the peripheral region 110b. The trench HpA may be constituted by a single opening of the second insulating layer 144b, and the trench HpA exposes the first insulating layer 144aA. The element substrate 100A has advantages and effects similar to those of the element substrate 100, and will not be repeated here.
請再參照圖2A及圖2C,在測試接墊140中,至少一溝槽Hp之數量可為複數個。這些溝槽Hp實質上可構成一環狀結構,以環繞接觸開口Hc。溝槽Hp實質上可不與導電層142重疊。換言之,溝槽Hp是在導電層142之開口142c的正上方。在本實施例中,測試接墊140的多個溝槽Hp的尺寸可相異。詳言之,位在導電層142之本體部142a上下二側之多個溝槽Hp具有相同的第一面積,位在導電層142之本體部142a左右二側之多個溝槽Hp具有相同的第二面積,其中第二面積大於第一面積。然而,本發明之溝槽的型態並不限於圖2A所示。溝槽的型態可視實際的需 求而定。舉例而言,圖5為本發明又一實施例之元件基板局部的上視示意圖。圖5的元件基板100C與圖2A的元件基板100相似,因此相同或相對應的元件以相同或相對應的標號表示。在圖5的實施例中,測試接墊140C的多個溝槽Hp可具有相同尺寸,且均勻地環繞在接觸開口Hc四周。 Referring to FIG. 2A and FIG. 2C again, in the test pad 140, the number of at least one trench Hp may be plural. These grooves Hp may substantially constitute an annular structure to surround the contact opening Hc. The trench Hp may not substantially overlap the conductive layer 142. In other words, the trench Hp is directly above the opening 142c of the conductive layer 142. In the present embodiment, the sizes of the plurality of trenches Hp of the test pads 140 may be different. In detail, the plurality of trenches Hp located on the upper and lower sides of the body portion 142a of the conductive layer 142 have the same first area, and the plurality of trenches Hp located on the left and right sides of the body portion 142a of the conductive layer 142 have the same The second area, wherein the second area is larger than the first area. However, the type of the groove of the present invention is not limited to that shown in Fig. 2A. The type of groove can be seen as actual needs It depends. For example, FIG. 5 is a top plan view of a portion of a component substrate according to still another embodiment of the present invention. The element substrate 100C of FIG. 5 is similar to the element substrate 100 of FIG. 2A, and therefore the same or corresponding elements are denoted by the same or corresponding reference numerals. In the embodiment of FIG. 5, the plurality of grooves Hp of the test pad 140C may have the same size and uniformly surround the contact opening Hc.
圖6A為本發明又一實施例之元件基板局部的上視示意 圖。圖6B為根據圖6A的剖線D-D’所繪的元件基板局部的剖面示意圖。請參照圖6A及圖6B,元件基板100D與圖2A及圖2B的元件基板100相似,因此相同或相對應的元件以相同或相對應的標號表示。在圖6A及圖6B的實施例中,導電層142D可不像圖2C之導電層142般具有開口142c,導電層142D可為一完整導電圖案。溝槽HpD可為連續的環狀溝槽,以環繞接觸開口Hc。溝槽HpD暴露出導電層142D。與圖2A及圖2B的實施例類似地,第一、二絕緣層144a、144b亦分別具有相重合的二開口,而呈連續環狀的溝槽HpD亦可由第一、二絕緣層144a、144b之相重合的二開口構成。但本發明不限於此,圖7為本發明再一實施例之元件基板局部的剖面示意圖。圖7的元件基板100E與圖6A及圖6B的元件基板100D相似,因此相同或相對應的元件以相同或相對應的標號表示。在圖7的實施例中,溝槽HpE亦為一連續的環狀溝槽,以環繞接觸開口Hc。與圖6A及圖6B的溝槽HpD不同的是,在圖7的實施例中,第一絕緣層144aE在主動區110a與周邊區110b的交界附近可不具開口。呈連續環狀的溝槽HpE可由第二絕緣層 144b的單一開口構成,而呈連續環狀的溝槽HpE可暴露出第一絕緣層144aE。元件基板100D、100E具有與元件基板100相似的優點,於此便不再重述。 6A is a top plan view showing a part of a component substrate according to still another embodiment of the present invention; Figure. Fig. 6B is a schematic cross-sectional view showing a part of the element substrate taken along the line D-D' of Fig. 6A. Referring to FIGS. 6A and 6B, the element substrate 100D is similar to the element substrate 100 of FIGS. 2A and 2B, and therefore the same or corresponding elements are denoted by the same or corresponding reference numerals. In the embodiment of FIGS. 6A and 6B, the conductive layer 142D may not have an opening 142c like the conductive layer 142 of FIG. 2C, and the conductive layer 142D may be a complete conductive pattern. The trench HpD may be a continuous annular trench to surround the contact opening Hc. The trench HpD exposes the conductive layer 142D. Similar to the embodiment of FIG. 2A and FIG. 2B, the first and second insulating layers 144a, 144b also have two openings that coincide with each other, and the continuous annular groove HpD may also be composed of the first and second insulating layers 144a, 144b. The two openings are coincident with each other. However, the present invention is not limited thereto, and FIG. 7 is a schematic cross-sectional view showing a part of the element substrate according to still another embodiment of the present invention. The element substrate 100E of FIG. 7 is similar to the element substrate 100D of FIGS. 6A and 6B, and therefore the same or corresponding elements are denoted by the same or corresponding reference numerals. In the embodiment of Figure 7, the trench HpE is also a continuous annular trench to surround the contact opening Hc. Unlike the trench HpD of FIGS. 6A and 6B, in the embodiment of FIG. 7, the first insulating layer 144aE may have no opening near the boundary between the active region 110a and the peripheral region 110b. The continuous annular groove HpE may be a second insulating layer A single opening of 144b is formed, and a continuous annular groove HpE may expose the first insulating layer 144aE. The element substrates 100D, 100E have similar advantages as the element substrate 100 and will not be repeated here.
圖8為本發明一實施例之元件基板的上視示意圖。圖8 的元件基板100F與圖1的元件基板100相似,因此相同或相對應的元件以相同或相對應的標號表示。元件基板100F與圖1的元件基板100不同之處在於:元件基板100F之測試接墊140F的位置與元件基板100之測試接墊140的位置不同。詳言之,當軟性電路板160與多個訊號接墊130接合後,測試接墊140F可被軟性電路板160延伸至訊號接墊130外的部分覆蓋。如此一來,使用者便不易察覺到測試接墊140F的設置,而有助於包括元件基板100F之顯示面板的外觀美感提升。 FIG. 8 is a top plan view of a component substrate according to an embodiment of the present invention. Figure 8 The element substrate 100F is similar to the element substrate 100 of FIG. 1, and therefore the same or corresponding elements are denoted by the same or corresponding reference numerals. The element substrate 100F is different from the element substrate 100 of FIG. 1 in that the position of the test pad 140F of the element substrate 100F is different from the position of the test pad 140 of the element substrate 100. In detail, after the flexible circuit board 160 is bonded to the plurality of signal pads 130, the test pads 140F can be covered by a portion of the flexible circuit board 160 that extends beyond the signal pads 130. As a result, the user is less likely to perceive the setting of the test pad 140F, and contributes to an aesthetically pleasing appearance of the display panel including the element substrate 100F.
綜上所述,在本發明一實施例之元件基板中,測試接墊 的接觸圖案層向絕緣層的溝槽延伸而使接觸圖案層的一部份位於絕緣層的溝槽內,此時部分的接觸圖案層舖設於溝槽的側壁上而形成一緩坡。當利用一配向工具在鋪設於測試接墊及畫素陣列上的配向膜上進行一接觸式配向程序時,配向工具便能夠順著上述緩坡以穩定的下壓力量對主動區與周邊區交界附近的部份配向膜以及靠近主動區中心的部份配向膜進行配向。如此一來,元件基板上之各區域上的配向膜便能夠具有相近的錨定力,從而改善習知技術中配向不良的現象。 In summary, in the component substrate of an embodiment of the invention, the test pad The contact pattern layer extends toward the trench of the insulating layer such that a portion of the contact pattern layer is located in the trench of the insulating layer, and a portion of the contact pattern layer is laid on the sidewall of the trench to form a gentle slope. When a contact alignment process is performed on the alignment film laid on the test pad and the pixel array by using an alignment tool, the alignment tool can follow the gentle slope with a stable downforce to the vicinity of the active zone and the peripheral zone. Part of the alignment film and a portion of the alignment film near the center of the active region are aligned. As a result, the alignment films on the regions on the element substrate can have similar anchoring forces, thereby improving the poor alignment in the prior art.
雖然本發明已以實施例揭露如上,然其並非用以限定本 發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed above by way of example, it is not intended to limit the present invention. The scope of the present invention is defined by the scope of the appended claims, which are defined by the scope of the appended claims. quasi.
10‧‧‧滾輪 10‧‧‧Roller
20‧‧‧布毛 20‧‧‧布毛
100‧‧‧元件基板 100‧‧‧ element substrate
110‧‧‧基板 110‧‧‧Substrate
110a‧‧‧主動區 110a‧‧‧active area
110b‧‧‧周邊區 110b‧‧‧ surrounding area
110c‧‧‧承載面 110c‧‧‧ bearing surface
140‧‧‧測試接墊 140‧‧‧Test pads
142‧‧‧導電層 142‧‧‧ Conductive layer
142a‧‧‧本體部 142a‧‧‧ Body Department
142b‧‧‧橋接電極 142b‧‧‧Bridge electrode
144‧‧‧絕緣層 144‧‧‧Insulation
144a‧‧‧第一絕緣層 144a‧‧‧first insulation
144b‧‧‧第二絕緣層 144b‧‧‧Second insulation
146‧‧‧接觸圖案層 146‧‧‧Contact pattern layer
146a‧‧‧邊緣 146a‧‧‧ edge
A-A’‧‧‧剖線 A-A’‧‧‧ cut line
Hc‧‧‧接觸開口 Hc‧‧ contact opening
Hp‧‧‧溝槽 Hp‧‧‧ trench
d1‧‧‧法線方向 D1‧‧‧ normal direction
d3‧‧‧預定配向方向 d3‧‧‧Predetermined alignment direction
S1‧‧‧第一側壁 S1‧‧‧ first side wall
S2‧‧‧第二側壁 S2‧‧‧ second side wall
S3‧‧‧底部 S3‧‧‧ bottom
R‧‧‧配向工具 R‧‧‧ Alignment tool
PI‧‧‧配向膜 PI‧‧‧ alignment film
Claims (9)
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TW103125992A TWI531837B (en) | 2014-07-30 | 2014-07-30 | Device substrate and aligning method thereof |
CN201410534206.2A CN104267553B (en) | 2014-07-30 | 2014-10-11 | Component substrate and alignment method thereof |
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CN105137678B (en) * | 2015-10-15 | 2018-06-19 | 深圳市华星光电技术有限公司 | A kind of pixel electrode structure and liquid crystal display panel |
CN105259709B (en) * | 2015-10-28 | 2018-11-02 | 深超光电(深圳)有限公司 | array substrate and liquid crystal display panel |
KR101931768B1 (en) | 2016-06-30 | 2018-12-24 | 삼성디스플레이 주식회사 | Electronic device |
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TWI370257B (en) * | 2008-07-15 | 2012-08-11 | Au Optronics Corp | Panel circuit structure |
JP5521305B2 (en) * | 2008-10-08 | 2014-06-11 | セイコーエプソン株式会社 | Method for manufacturing liquid crystal device and liquid crystal device |
CN101697052B (en) * | 2009-09-18 | 2011-08-10 | 友达光电股份有限公司 | Active component array motherboard and manufacturing method thereof |
CN102495505A (en) * | 2011-12-21 | 2012-06-13 | 友达光电股份有限公司 | Electrostatic protection method used in process of assembling liquid crystal display |
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TWI531837B (en) | 2016-05-01 |
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