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TW201306312A - 發光裝置 - Google Patents

發光裝置 Download PDF

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Publication number
TW201306312A
TW201306312A TW100126302A TW100126302A TW201306312A TW 201306312 A TW201306312 A TW 201306312A TW 100126302 A TW100126302 A TW 100126302A TW 100126302 A TW100126302 A TW 100126302A TW 201306312 A TW201306312 A TW 201306312A
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TW
Taiwan
Prior art keywords
light
lead frame
grasping
emitting element
illuminating device
Prior art date
Application number
TW100126302A
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English (en)
Inventor
Pei-Song Tsai
Yun-Yi Tien
Tzu-Pu Lin
Yen-Chih Chou
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Lextar Electronics Corp
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Publication date
Application filed by Lextar Electronics Corp filed Critical Lextar Electronics Corp
Priority to TW100126302A priority Critical patent/TW201306312A/zh
Priority to CN2011103367875A priority patent/CN102903822A/zh
Publication of TW201306312A publication Critical patent/TW201306312A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Led Device Packages (AREA)

Abstract

一種發光裝置，包括發光元件；第一導線架，承載發光元件，與發光元件之第一端構成電性連接；第二導線架，與發光元件之第二端構成電性連接；至少第一抓取結構，形成於第一導線架上；至少一第二抓取結構，形成於第二導線架上；以及一封裝罩，與第一及第二導線架接合，且包覆發光元件及第一與第二抓取結構。

Description

發光裝置
本發明係有關於發光裝置，特別是關於發光二極體元件的封裝結構。
發光二極體(Light Emitting Device,LED)相較於傳統光源，具有高效率、壽命長、結構堅固且高開關速度等優勢，且可以廣泛應用於顯示器及各種照明設備，因此發展發光二極體光源為近年來的主流趨勢。典型的發光二極體晶片具有透明的封裝罩，覆蓋於發光二極體晶片以及基板上方，以保護發光二極體晶片以及其打線(bonding wire)不受外力或水氣的破壞。然而，封裝罩與基板之間常因為熱作用或接合不良而產生剝離(peeling)現象，使得封裝罩的保護作用喪失，對於元件的可靠度影響甚劇。
因此，本發明提出一種發光裝置，包括發光元件；第一導線架，承載發光二極體晶片，與發光元件之第一端構成電性連接；第二導線架，與發光元件之第二端構成電性連接；至少第一抓取結構，形成於第一導線架上；至少一第二抓取結構，形成於第二導線架上；以及一封裝罩，與第一及第二導線架接合，且包覆發光元件及第一與第二抓取結構。
以下實施例揭露一種發光裝置以及其形成方法。為求簡明，僅於以下實施例及圖式中描述一個發光裝置100，惟於實際製程中，可同時形成複數個發光裝置100。首先如第1圖所示，將一第一導線架20a與一第二導線架20b設置於一基板10之上。接著將一發光元件30安置於第一導線架20a之上。
第一導線架20a與第二導線架20b可以沖壓(stamping)、電鍍(electroplating)或是沈積方式形成。於安裝發光元件30之前，可選擇性的於第一導線架20a與一第二導線架20b表面塗上一層銀膠或錫膏，以增加發光元件30與第一導線架20a之間的接合度，並可降低後續封裝製程中第一導線架20a與一第二導線架20b與導線40a、40b之間的接觸電阻值。於一較佳實施例中，發光元件30為一發光二極體元件。
接著如第2A圖所示，分別於第一導線架20a以及第二導線架20b上形成導線40a、40b以及複數個抓取結構50a、50b。其中導線40a的一端與第一導線架20a接合以形成電性連結，另一端則與發光元件30的一端子電性連結；導線40b的一端與第一導線架20b接合以形成電性連結，另一端則與發光元件30的另一端子電性連結。抓取結構50a的兩端皆與第一導線架20a接合，抓取結構50b的兩端則皆與第一導線架20b接合。第2B圖為第2A圖中實施例的平面示意圖。
導線40a、40b以及抓取結構50a、50b皆可以打線機(wire bonder)形成，可以使用金、銅、鋁等材料構成。於部份實施例中，抓取結構50a、50b可為線狀，帶狀(ribbon)，或片狀(slice)。於部份實施例中，抓取結構50a、50b的外觀可呈現圓弧型或具有彎曲角度。應注意的是，於發光元件操作時，由於抓取結構50a的兩端皆與第一導線架20a接合，而抓取結構50b的兩端則皆與第二導線架20b接合，因此抓取結構50a與50b之兩端皆為等電位，並未有任何電流通過其上。
接著形成一封裝罩60於基板10之上，覆蓋發光元件30、第一導線架20a與第二導線架20b、導線40a、40b，以及抓取結構50a、50b。其中抓取結構50a、50b與封裝罩60接合，以形成發光裝置100，如第3A圖所示。第3B圖為第3A圖中實施例的平面示意圖。
封裝罩60可以插入塑模(insert molding)方式形成，經由填充注膠於一模具內，並經適量的加熱加壓以將膠材硬化。膠材呈流體狀時會與抓取結構50a、50b緊密貼附，膠材經硬化後形成封裝罩60，抓取結構50a、50b便具有額外的固定封裝罩60之功效。封裝罩60的材料可為矽氧樹脂(silicone resin)或環氧樹脂(epoxy resin)。
於部份實施例中，封裝罩60包括鏡面部份60a以及基層部份(base layer)60b，其中鏡面部份60a位於發光元件30的正上方，而基層部份60b則位於發光元件30的周圍。一較佳實施例中，抓取結構50a、50b係與基層部份60b貼合，如第3A圖及第3B圖所示。惟本發明之範疇不侷限於此。於部份其他實施例中，如第4圖之發光裝置200，可以於打線形成後，以點膠製程於塑膠帶線晶片載體(plastic leaded chip carrier)70上形成封裝罩80。其中抓取結構50a、50b與封裝罩80接合，具有額外的固定封裝罩80之功效。
本發明提供一種發光裝置，藉由抓取結構，強化封裝罩與裝置基板及部件之間的接合力，進而提昇發光裝置的可靠度及平均壽命，無須增加額外的製程。
10．．．基板
20a、20b．．．導線架
30．．．發光元件
40a、40b．．．導線
50a、50b．．．抓取結構
60．．．封裝罩
60a．．．鏡面部份
60b．．．基層部份
70．．．塑膠帶線晶片載體
80．．．封裝罩
100．．．發光裝置
200．．．發光裝置
第1圖為根據一實施例，發光裝置製造過程的剖面示意圖；
第2A圖為根據一實施例，發光裝置製造過程的剖面示意圖；
第2B圖為第2A圖中發光裝置製造過程的平面示意圖；
第3A圖為根據一實施例，發光裝置製造過程的剖面示意圖；
第3B圖為第3A圖中發光裝置製造過程的平面示意圖；
第4圖為根據一實施例，發光裝置製造過程的剖面示意圖。
10．．．基板
20a、20b．．．導線架
30．．．發光元件
40a、40b．．．導線
50a、50b．．．抓取結構
60．．．封裝罩
60a．．．鏡面部份
60b．．．基層部份
100．．．發光裝置

Claims (10)

  1. 一種發光裝置，包括：一發光元件；一第一導線架，承載該發光元件，與該發光元件之一第一端構成電性連接；一第二導線架，與該發光元件之一第二端構成電性連接；至少一第一抓取結構，形成於該第一導線架上；至少一第二抓取結構，形成於該第二導線架上；以及一封裝罩，與該第一及第二導線架接合，且包覆該發光元件及該第一與該第二抓取結構。
  2. 如申請專利範圍第1項所述之發光裝置，其中該封裝罩具有一透鏡，且設置於該發光元件之上方。
  3. 如申請專利範圍第1項所述之發光裝置，其中該第一與該第二抓取結構為線狀、帶狀或片狀金屬。
  4. 如申請專利範圍第1項所述之發光裝置，其中該第一抓取結構之兩端均接合至該第一導線架；該第二抓取結構之兩端均接合至該第二導線架。
  5. 如申請專利範圍第1項所述之發光裝置，其中該第一與該第二抓取結構係彎折成為圓弧形或多邊形。
  6. 如申請專利範圍第1項所述之發光裝置，其中該第一與該第二抓取結構係藉由打線機而成型於該第一及該第二導線架上。
  7. 如申請專利範圍第1項所述之發光裝置，其中該第一與該第二抓取結構均無電流通過。
  8. 如申請專利範圍第1項所述之發光裝置，其中該第一抓取結構之兩端無電位差；該第二抓取結構之兩端無電位差。
  9. 如申請專利範圍第1項所述之發光裝置，其中該封裝罩之材質為矽氧樹脂(silicone resin)或環氧樹脂(epoxy resin)。
  10. 如申請專利範圍第1項所述之發光裝置，其中該發光元件為發光二極體晶片。
TW100126302A 2011-07-26 2011-07-26 發光裝置 TW201306312A (zh)

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Application Number Priority Date Filing Date Title
TW100126302A TW201306312A (zh) 2011-07-26 2011-07-26 發光裝置
CN2011103367875A CN102903822A (zh) 2011-07-26 2011-10-31 发光装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000022044A (ja) * 1998-07-02 2000-01-21 Mitsubishi Electric Corp 半導体装置とその製造方法
JP4101468B2 (ja) * 2001-04-09 2008-06-18 豊田合成株式会社 発光装置の製造方法
JP5233170B2 (ja) * 2007-05-31 2013-07-10 日亜化学工業株式会社 発光装置、発光装置を構成する樹脂成形体及びそれらの製造方法
CN201204212Y (zh) * 2008-05-30 2009-03-04 深圳市瑞丰光电子有限公司 一种led封装结构
US20100237378A1 (en) * 2009-03-19 2010-09-23 Tzu-Han Lin Light emitting diode package structure and fabrication thereof
CN102456824A (zh) * 2010-10-21 2012-05-16 展晶科技(深圳)有限公司 发光二极管封装结构

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