TW201220382A - Process for producing light emitting diode, process for cutting light emitting diode and light emitting diode - Google Patents

Abstract

A process for producing a light emitting diode, a process for cutting light emitting diode and light emitting diode are provided, the process being capable of reducing adverse effect derived from debris generated upon conducting laser-cutting of a metal substrate, and of preventing troubles such as slippage of dicing line due to heat generated upon cutting, etc. Such a process for producing a light emitting diode includes: a step of producing a wafer having a metal substrate consisting of a plurality of metallic layers and a compound semiconductor layer containing a light emitting layer formed on the metal substrate, a step of removing by etching a portion on a predetermined cutting line of the compound semiconductor layer, a step of removing by etching the portion of the predetermined cutting line of at least one layer at the side of laser irradiation of the plurality of metallic layer, and a step of cutting the metal substrate by irradiating laser along the portion removed of the metallic layers in a plane view.

Description

201220382 VI. Description of the invention: The present application claims priority from Japanese Patent Application No. 2010-156721, filed on Jul. 9, 2010, the content of which is hereby incorporated by reference. [Technical Field] The present invention relates to a method for manufacturing a light-emitting diode, a method for cutting the same, and a method for manufacturing a light-emitting diode using a metal substrate as a substrate, a cutting method, and a light-emitting diode Diode. [Prior Art] As a high-output light-emitting diode (LED) that emits red and infrared light, a compound semiconductor LED is known, which is composed of samarium arsenide (composition formula AlxGa! - xAs; 0 $ 1) A light-emitting layer formed. On the other hand, as a high-brightness light-emitting diode (LED) which emits red, orange, yellow or yellow-green visible light, a compound semiconductor LED having a composition of aluminum gallium indium phosphide (AlxGai) is known. -x) YIn丨—yP mg !,〇< The formed light-emitting layer. As the substrate of such LEDs, a substrate material is generally used, which is optically opaque with respect to the light emitted from the light-emitting layer. At the same time, there is no such strong strength of gallium arsenide (GaAs), etc. For this purpose, a technique has recently been disclosed for the purpose of obtaining a higher brightness of Led while further improving the mechanical strength of the element and improving heat dissipation. This technique removes the substrate material that is opaque to the emitted light, and then re-joins the support layer (substrate) formed by the material that transmits or reflects the emitted light and is excellent in mechanical strength and heat dissipation, thereby forming the joint. LED (see, for example, Patent Document 丄7). 201220382 According to the development of the substrate bonding technology, the degree of freedom in the substrate which can be used as the support layer has increased. Proposal for the application of a metal substrate, which has excellent advantages in terms of cost, mechanical strength, heat dissipation, etc. In particular, since it is necessary to use a high-current light-emitting diode for high output, the heat generation ratio is higher. Since it is known that there are many components, the heat dissipation is ensured. The metal substrate can efficiently emit heat from the light-emitting portion (the compound semiconductor layer) to the outside of the light-emitting diode, so that the metal substrate is bonded to the compound semiconductor layer. The light-emitting diode of the metal substrate is disclosed in, for example, Patent Document 8 and Patent Document 9. The metal substrate is bonded to the metal substrate by knife cutting or laser cutting or the like. The wafer of the compound semiconductor layer in which the light-emitting layer is formed is wafer-formed. In this case, the disk-cutting cutter that rotates the disk at a high speed is pressed against the substrate, and the laser cutting device irradiates the laser to the substrate. The heat generated by the absorption of the laser energy is used to melt and evaporate the cut portion (ablation). [Priority Technical Literature] [Specialized [Patent Document 2] JP-A-2002-246857 (Patent Document 3) JP-A-2002-246640 (Patent Document 4) Patent No. 2588849 [Patent Document 5] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. [Patent Document 9] JP-A-2006-13499 SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] However, the use of a knife to cut a metal substrate has a problem that the cutter is clogged and is not easy to cut off. call. In addition, there are also cut-offs and cracks or cracks that affect the electric power F-generation gaps (the problem of the circuit area. Moreover, the t-degree is large, and the width and width of the sharpening knife are widened. Therefore, there is also a problem that the degree of visibility must be set in the effective use as a circuit area. The area ratio is also a problem in the case of cutting off the metal substrate by laser cutting. 'When cutting off, here's the 4 series due to the irradiation of the laser beam, which is the light of the material to be irradiated ^ ^ > , by-products, interest, u < melt or scattering matter attached to the edge (Material surface or cut surface). When the cut-off portion is not only the appearance of the light-emitting diode is not the front side, it becomes a wire bonding X & When the debris adheres to the side, the wafer is poorly bonded. On the back ISJ 〇

Jt, if the occupant is formed in the midnight to form a light-emitting portion; when the chip is on the side of the light-emitting portion, the contact may cause a short-circuit such as a side surface of the body layer of the light-emitting diode, and the selectivity is lowered. In order to avoid related problems, the miscellaneous soil + is more. However, in this case, the number of cuts made by the cut to the cut portion is reduced. The light-emitting diode that can be manufactured by the film is a metal layer with a boundary layer. Deterioration pitch Cut width This type of shape can be reduced by the amount of non-polarity 201220382 In addition, the influence of heat when cutting a metal substrate by laser cutting is a problem. Specifically, in the case where the different kinds of metals (for example, in the substrate) are joined in a state in which the width is different depending on the heat of each metal during bonding, the surface has a stress state. In the case where three metal layers are formed, the laser is cut by the laser: when the first metal layer is released, the stress is released in the second metal layer on the third metal layer, but the stress is cut off because of the stress on the third metal layer side. It will disintegrate, and the gold result will produce a problem that the cutting line deviates from the desired position, the crystal, and the light-emitting diode wafer becomes abnormal. In addition, there is a problem that the metal substrate expands due to heat generation and the width becomes incorrect. That is, the substrate is inflated. 'If it becomes normal temperature after cutting, the ruler will return to the original one. It will be different from the cutting time. The thicker the metal substrate, the more heat problem will change. In addition, if the crystal of the light-emitting diode changes due to the influence of heat, it will The present invention has been made in view of the above problems, a method for manufacturing a target photodiode, a cutting method, and a method for cutting a metal substrate by laser cutting The good influence of the raw material, and the prevention of the heat generated by the cutting, and the like. The expansion coefficient of the Cu) produced at the time of cutting is the first to third gold profit at room temperature (the laser cut off The surface of the layer side still remains the segmentation problem of the substrate being deformed. When the cutting state is in the inch, the spacing is larger, so the back side of the sheet is provided with a light diode, which is brought by the debris. In order to solve the above problems, the present invention provides the following means. (1) A method of manufacturing a light-emitting diode, which is obtained by irradiating a laser onto a wafer to produce a wafer shape. A method of emitting a diode, comprising: a step of fabricating a wafer having a metal substrate formed of a plurality of metal layers; and a compound semiconductor layer including a light-emitting layer formed on the metal substrate; removing by etching a step of cutting a portion of the compound semiconductor layer on a predetermined line; and removing the at least one of the plurality of metal layers from the laser irradiation surface side by etching And a step of cutting a portion of the metal layer that is removed in a plan view and cutting the metal substrate to form a predetermined processing to be cut. The "predetermined line" refers to an imaginary line that includes the actual implementation line on the substrate or the like and the actual processing is not performed. "The portion where the predetermined line is cut off the predetermined line is cut." I also asks Yahs/Hundreds of 彳曰 彳曰 彳曰 彳曰 彳曰 | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | : is a single - formed of a different kind of metal material. Metal layer to (2) according to the above-mentioned (1) of the production of the light-emitting diode, &, before the step of cutting off the metal substrate, 'other profitable & And a step of irradiating the portion of the predetermined line on the cutting line of the etching-etching layer among the plurality of metal layers. At least 201220382 method, semiconductor has a layer of alloys such as expansion system, nickel, and body expansion system. Wherein, the gold of the layer, wherein the layer is made of a body (3), wherein the plurality of metal layers comprise a coefficient of thermal expansion greater than that of the compound layer. A material having a large coefficient of thermal expansion and a thermal expansion material having a small coefficient of thermal expansion of the compound semiconductor layer. (4) The method of producing a light-emitting diode according to any one of the preceding claims, wherein the material having a thermal expansion coefficient larger than a heat number of the compound semiconductor layer is aluminum, copper, silver, or the like. Gold titanium or any of these alloys is formed. (5) The method of producing a light-emitting diode according to any one of the preceding claims, wherein the material having a thermal expansion coefficient smaller than a heat number of the compound semiconductor layer is molybdenum, tungsten, chromium or Any of these is formed. (6) The method of producing a light-emitting diode according to any one of the preceding claims, wherein the plurality of metal layers are three-layered metal (7), and the light-emitting diode according to the above item (6) In the manufacturing method, among the three metal layers, the two metal layers of the metal layer next to each other are formed of the same metal material. (8) The method for producing a light-emitting diode according to the above item (7), wherein the metal layer of the one layer is formed of indium, and the two layers of metal copper are formed. (9) The method of producing a light-emitting diode according to any one of the preceding aspects, wherein the metal layer of the metal layer of the three layers of the metal layer of the three layers is removed by I. Layer and use a laser to cut the metal layer of the previous layer. The method for manufacturing a light-emitting diode according to any one of the items (1) to (9), wherein the light-emitting layer comprises an A1GaInP layer or an A1GaAs layer (in the month of the month) (1) to (10) In the method for producing a light-emitting diode according to the above aspect, the 'reflective structure is provided between the compound semiconductor layer and the metal substrate. (12) A method for cutting a wafer by irradiating a laser to cut a wafer-shaped light-emitting diode. The wafer has a metal substrate formed of a plurality of gold layers and formed on the metal substrate. In the above compound semiconductor layer, the cutting method is characterized in that: a step of removing a portion on the line to cut of the compound semiconductor layer by etching; and removing at least one layer of the laser irradiation surface side among the plurality of metal layers by etching a step of cutting a portion on the predetermined line; and a step of severing the metal substrate by irradiating a portion of the metal layer with the removed portion in a plan view. (1) The cutting method according to the above item (12), further comprising: cutting the at least one layer on the opposite side of the laser irradiation surface among the plurality of metal layers by etching before the step of cutting the metal substrate The step of breaking the part of the line. (14) A light-emitting diode manufactured by the method for producing a light-emitting body according to any one of the items (1) to (13) above. (15) A light-emitting diode comprising a metal substrate formed of a plurality of metal layers and a compound semiconductor layer including a light-emitting layer formed on the metal substrate, wherein the light-emitting diode is characterized by: The side surface of the substrate is formed by a wetted etched surface and a laser cut surface which are arranged in the thickness direction of the metal substrate; and at least one metal layer on the side of the compound semiconductor layer among the plurality of metal layers The side surface of the metal layer on the side opposite to the compound semiconductor layer on the side surface is formed by a wet rice facet, and the by-product generated by the irradiation of the laser adheres only to the side surface of the metal substrate. (16) The light-emitting diode according to the item (15), wherein the plurality of metal layers are three-layer metal layers, and the side faces of the metal layers of the two layers of the metal layer are formed by wet etching surfaces. The side surface of the metal layer of the foregoing layer is formed by a laser cut surface. (17) The light-emitting diode according to the above (16), wherein the metal layer of the one layer is formed of 19, and the metal layer of the two layers is made of copper. [Effect of the Invention] Much like the manufacturing method of the light-emitting diode of the present invention, by 丨丨 丨 丨 丨 U U U U U 作 作 用 用 用 用 用 用 用 J J J J J J J J J J J J J J J J At least the step of the part on the front side of the surface of the surface and the part of the layer of the shovel of the shovel of the shovel The metal on the side of the laser shot is # i i #分, so the laser b ^ S cuts the amount of raw shoulders on the cut line. 里.楚少' can reduce the ten sides of the body to be included The position of the substrate of the metal layer is as far as the composition of the compound semiconductor v. In the case of the semiconductor layer of the compound semiconductor of a, the shoulder is subjected to laser cutting off the compound half-mole layer. The result is 'debris layer, which can prevent the short road' from increasing the yield. 201220382 Cut off the side of the genus layer and the number of the metal engraving.: , The secant cut surface of the cut line should be cut low The composition of the lightning expansion heat is easy:: the manufacturing method of the light-emitting diode, In order to adopt a configuration in which at least the layer of the opposite side of the irradiation surface of the plurality of golds is removed by the use of the residue before the step of gold=, the portion of the line to be cut is removed by the engraving. The portion of the metal layer on the side of the cut line pre-releases the interfacial stress of the metal layer that is instantaneously connected to the metal layer, thereby reducing the degree of equilibrium disintegration of the stress in the substrate during the laser cutting, although it is necessary to consider the The mechanical strength is reduced, and if the metal screen of the etching is increased, the balance of the stress in the laser cutting can be further reduced to reduce the mechanical strength of the remaining metal layer without etching ( For example, the more the amount of metal layer can be engraved, and the result of 'reduce the degree of equilibrium collapse of the stress in the metal substrate during laser cutting' can reduce the degree of deformation of the metal substrate, and can reduce the deviation from the desired position. The degree 'is well maintained by the wafer, and prevents the shape of the light-emitting diode wafer from becoming abnormal. In addition, since a part of the boundary force among a plurality of interface stresses is released, In addition, the extent to which the laser beam is deviated from the desired position is performed. Further, since the metal cutting of the metal layer is removed by etching to reduce the thickness of the laser-cut metal substrate, the thickness of the metal substrate can be reduced. The heat generated during the cutting is reduced, and the metal substrate caused by the heat generation is suppressed. As a result, the variation in the width between the cuts can be reduced, and the influence of the shape on the back side of the light-emitting diode wafer can be prevented from being affected. Since the metal substrate is formed of a plurality of metal layers, etching can be performed according to each metal layer by etching selectivity, and the etching depth of the metal substrate is controlled. -12- 201220382 Further, 'because it is not a laser to cut all metal layers, By removing the ° minute by etching, the amount of metal cut by the laser is reduced, so that the amount of debris generated during the laser cut can be reduced, and the short circuit caused by the adhesion of the debris to the side of the compound semiconductor layer including the light-emitting layer can be prevented. . Further, since the debris can be prevented from adhering to the front surface and the back surface of the metal substrate, or the amount of adhesion can be reduced, appearance defects can be reduced, and wire bonding failure or wafer bonding failure can be reduced. According to the manufacturing method of the light-emitting diode of the present invention, since the plurality of metal layers are composed of a material having a thermal expansion coefficient larger than that of the compound semiconductor layer and a material having a thermal expansion coefficient smaller than that of the compound semiconductor layer, the entire metal substrate The thermal expansion coefficient (the ratio of the length/volume expansion of the metal substrate which actually appears corresponding to the temperature rise) is close to the thermal expansion coefficient of the compound semiconductor layer, so the thermal expansion amount of the metal substrate when the compound semiconductor layer is bonded to the metal substrate and the compound semiconductor layer The difference in the amount of thermal expansion is reduced, and the interfacial stress generated between the compound semiconductor layer and the metal substrate is lowered. As a result, the interfacial stress on the opposite side of the compound semiconductor layer side of the metal substrate and the compound semiconductor layer is respectively at the time of laser cutting. The interfacial stress of one of them will be released first, and the deformation of the metal substrate is reduced. According to the method for producing a light-emitting diode of the present invention, since a plurality of metal layers are formed as three metal layers, only one metal layer on the opposite side of the laser irradiation surface can be etched away, thereby reducing the cut-off. The deviation of the line or the variation of the width of the cutting pitch. In addition, by etching only one metal layer on the side of the laser irradiation surface, the amount of generated debris can be reduced, and at the same time, the debris can be prevented from adhering to the compound semiconductor layer to cause a short circuit, and the light can be made according to the present invention. The method of forming a light-emitting diode and forming a metal layer of three metal layers is because the two layers of the metal layer of the layer are laminated/layered into three layers of metal The material is formed, so the same etchant metal layer can be etched from the metal layer of the same metal layer, so that the metal layer with a shameful layer can be removed by etching at the same time - the benefit of the Curie is simple and simple; time. The m-genus layer can shorten the α of the light-emitting diode according to the present invention, and the metal layer of the metal layer adopts three layers, wherein the three-layer method, because the metal layer of the second-layer metal layer is two Among the metal layers, the metal layer is formed of molybdenum, so that the metal layer formed of copper formed by the second layer of molybdenum is deeply engraved, and the strength is strong, even if it is qualitative. According to the cutting method of the present invention, the laser irradiation surface side is removed from the plurality of metal layers: the step of removing the portion on the predetermined line by etching and the cutting Μ和+ « The removed knives of the hexa-layer layer, and the steps of cutting the metal substrate by the shot Λ. m Α 9 structure, using the button to remove the metal layer on the side of the shot The reason why Φ + is the part of the line on the line is that the amount of the metal substrate cut by the laser is small and the amount of the chip is small. In addition, the use of this configuration, the 纟 纟 纟 之 纟 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 U U U U U U U U U U U U U U U U U U U U The metal layer on the side of the 6th surface has been eroded to the point where the laser cutting is started. 4 μ From the compound semiconductor, the position of the metal substrate of the class is far away. As a result, the debris does not reach the layer, which prevents the material from being produced and improves the yield. The light guide-14-201220382 is further prepared according to the steps of the present invention, because the laser beam is used among the plurality of metal layers on the opposite side of the cut surface of the metal substrate, and the etching is performed by etching. Breaking the part of the predetermined line on the cut line; the interface of the metal layer on the opposite side of the side of the shot, the release of the equilibrium stress of the gold stress adjacent to the metal layer... The degree of breaking in the metal substrate can reduce the segmentation property of the wafer by reducing the deformation of the metal substrate of the dicing line, and the degree of deviation can be excellent. It is possible to prevent the shape interface 庑 of the light-emitting diode wafer from being aligned by the portion of the interfacial stress of the plurality of interfaces, and the laser is aligned in a state of being released. This also reduces the extent to which the cutting line deviates from the desired position. Qiu: Because the thickness of the metal substrate cut by the laser cutting in the laser cutting of the metal layer by etching is removed by etching, the heat generated by the expansion can be reduced, and the metal substrate caused by the heat generation can be suppressed. As a result, the variation in the width between the cuts can be reduced, and the influence of the flaws can be prevented from causing a change in the shape of the back side of the light-emitting diode wafer. Since the metal substrate is formed of a plurality of metal layers, it is possible to etch the respective metal layers by etching selectivity, and it is easy to control the depth of contact of the metal substrate. A light-emitting diode according to the present invention, that is, a light-emitting diode having a metal substrate formed of a plurality of metal layers and a compound semiconductor layer including a light-emitting layer formed on the metal substrate, because a side surface of the metal substrate is used a side surface of the metal layer formed by the wet etching -15-201220382 surface and the laser cut surface which are arranged in the thickness direction of the metal substrate, and at least one of the compound semiconductor layer side among the plurality of metal layers At least one layer of the opposite side of the semiconductor layer is formed on the side of the ruthenium layer by the wet etched surface, and the by-product generated by the laser irradiation is deposited only on the side of the metal substrate. Since the crumb does not adhere to the positive and negative sides of the metal substrate, the appearance is changed to the appearance of the conventional light-emitting diode [Embodiment]. The method of manufacturing the light-emitting diode of the present invention is described in detail with reference to the size ratio or size of the nuk body pattern, and the following is a detailed description of the method for manufacturing the light-emitting diode of the present invention. , cutting method and illuminating I · . In addition, A seeks to easily understand the features, and the following description is used: the partial part of the diagram is a magnified display of the characteristic part, and the / of the constituent elements are not equal to the actual one... The specific display material: the condition of the inch ratio is only for No. In addition to the &, the same component is attached with the same symbol or the description is simplified. In addition, the same components are attached with the :: or ellipsis, and the description is omitted or the description is simplified. (Embodiment 1) [Light Emitting Diode] Fig. 1 is a view showing an example of light emission according to an embodiment of the present invention. _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ a light-emitting diode 1 made of a gold compound semiconductor layer 3, wherein the metal 2 is formed

The side surface 5aa is formed by juxtaposed on the thickness of the metal substrate 5, and the wet etching surface of the substrate S is formed with the laser cut surface, and the plurality of metal layers are extended in the summer by at least one layer from the side of the compound semiconductor layer. The side surface of the metal layer is formed by a wet money facet forming side surface 22a of the metal layer and a side surface 21Ba of the metal layer farther from the ionized semiconductor layer, which is formed by a laser surface, and is generated by laser irradiation. The system is attached only to the side surface of the substrate 5 5 aa » The side of the metal layer on the side farther from the compound semiconductor layer can also be formed by the wet type facet. <Compound semiconductor layer> The compound semiconductor layer 3 is a laminated structure including a compound half of the light-emitting layer 2, and is formed by laminating a plurality of layers of epitaxial growth to form a crystal layer structure. As the compound semiconductor layer 3, an AlGalnP layer or an A1GaAs layer AlGalnP layer which has been established by, for example, a light-emitting efficiency substrate bonding technique, is formed of a material represented by a general formula (AlxGai_ χ) γΙηι- γρ (〇$ < Y $ 1). Layer. This composition is determined by the wavelength of the light emitted by the second light. The case of the AlGaAs layer used for the production of red and infrared light-emitting diodes is also determined by the composition of the constituent materials of the light-emitting diode. The compound semiconductor layer 3 is formed of a pn-junction in the compound semiconductor of either the n-type or the p-type. Further, the polarity of the surface of the compound half layer 3 may be either p-type or η-plastic. As shown in Fig. 1, the compound semiconductor layer 3 is formed of, for example, a contact/cover layer 10a, a light-emitting layer 2, a cladding layer 10b, and a GaP layer. The 2Ua compound is cut off from the rij, etc. of the gold 2 1 B a conductor. Conductor type conductor for 1 ' 0 pole body \ 12c 13 shape -17- 201220382 Contact layer 12c is a layer for reducing the contact resistance of an ohmic electrode, formed of, for example, n-type GaAs doped with Si, carrier The concentration is taken as lxl018cnT3, and the layer thickness is taken as 〇·〇5μπι. The cladding layer 10a is formed of, for example, n-type Al 〇 5 Ι 〇 〇 5 ρ doped with Si, and the carrier concentration is taken as 3. 5 μιη by a layer thickness of 3 x 10 〇 18 cn T 3 。. The luminescent layer 2 is made of, for example, undoped (AluGau). 5ΐη() 5ρ/ (Al〇.7Ga〇.3) Q.5In〇_5P has 10 pairs of laminated structures formed with a layer thickness of 0.2 μηι 〇 luminescent layer 2 series with double heterostructure (Double Hetero: DH), single quantum Construction of a well structure (Single Quantum Well: SQW) or a multiple quantum well structure (Multi Quantum Well: MQW). Here, the double heterostructure is a structure in which a carrier for radiation recombination is enclosed. In addition, the quantum well structure has one structure of the well layer and the two barrier layers of the well layer, the SQW system well layer, and the MQW system has two or more well layers. 4乍 is a method of forming the compound semiconductor layer 3, and an MOCVD method or the like can be employed. In order to obtain excellent light emission in terms of monochromaticity from the light-emitting layer 2, it is preferable to use an MQW structure as the light-emitting layer 2. The coating layer 10b is formed of, for example, 捩μ A, 匕, such as Mg-doped P-type Al0.5In〇.5P, and the carrier concentration is 8xi〇17 3

The thickness of the Cm' layer is 0.5 μm. The G a Ρ layer 1 3 is, for example, a ruthenium-type GaP layer doped with Α/Γ Μ ,, and the carrier concentration is taken as 5×10 cm—the layer thickness is taken as 2_. The M τ 耩 of the compound semiconductor layer 3 is not necessarily the structure described above, and may have, for example, a current-expansion layer of the entire compound semiconductor layer 3 in which the elemental energy is generated by the elemental energy kτ '* Used to limit the component drive current -18- 201220382 丨 丨 confined < 1st electric 1st shape and the shape of the semiconductor structure of the compound is used as a contact layer, using p such as AuBe, and lifting the lead to the first as GaP For example, a current blocking layer or a current limiting layer or the like which is formed in a region such as a reflective structure of ruthenium metal or the like is formed by using a structure such as A u B e and a reflection structure. The electrode and the second electrode are both ohmic electrodes, and the like are not particularly limited as long as the current is uniformly diffused to the compound layer 3. For example, it may be arranged in a circular shape or a rectangular pole in a plan view, and may be arranged by one electrode. Alternatively, a plurality of electrodes may be latticed. The material of the first electrode 6 may be, for example, AuGe or AuGeNi may be used when the n-type compound semiconductor is used as 12c. When a compound semiconductor such as AuSi is used as the contact layer 1 2 c, an example of AuZn or the like can be used. The layer can be further laminated with Au to prevent oxidation while bonding. When the n-type compound semiconductor layer 13 is used as the material of the second electrode 8, for example, an AuGe, AuGeNi, or AuSi P type compound semiconductor can be used as the Gap layer 13 as an example, and AuZn or the like can be used. The reflective structure 4 shown in Fig. 1 covers the surface 3b on the side of the reflective structure 4 of the compound semiconductor layer 3 of the second electrode 8. The body 4 is formed by laminating the metal film 15 and the transparent conductive film 14 to form a film 15 which is made of a metal such as copper, silver, gold or aluminum, and the like. The light reflectance is high and can be derived from the reflection structure-19. - 201220382 The light reflectance of the body 4 is 90% or more. By forming the metal film 15, the light from the light-emitting layer 2 is reflected by the metal film 15 in the front direction f, and the light extraction efficiency in the front direction f can be improved. Thereby, the luminance of the light-emitting diode can be further increased. The metal film 15 is preferably a laminated structure formed of a barrier layer and an Au-based eutectic metal (joining metal) from the side of the transparent conductive film μ, and the connection metal of the surface 15b of the π-like surface. A metal that has low electrical impedance and that melts at low temperatures. Since the metal for connection described above is used, the compound semiconductor layer 3 is not subjected to hot pressing, and the metal substrate can be connected. As the metal for connection, an Au-based eutectic metal having a chemical stability and a low melting point can be used. As the Au-based eutectic metal, for example,

Eutectic composition of alloys of AuSn, Au, and AuSl (Au-based eutectic metal). Further, it is preferable that the metal for connection is a metal such as titanium, chromium or tungsten. In the case where the metal such as titanium, chromium or tungsten is used as the metal, the impurities contained in the metal substrate are diffused to the side of the metal group 15 to suppress the reaction. The transparent conductive film 14 is composed of ITO 骐 ' IZ 〇 舢 、 、 、 、 、 、 、 、 、 、 、 、 、 Further, the reflective k body 4 may be composed only of the metal film crucible 5. In addition, instead of the transparent conductive member 14, or together with the transparent conductive film 14, a so-called cold mirror using a refraction of a transparent material T (a titanium oxide film or a multilayer of a yttrium oxide film) may be employed. The film or white alumina, A1N)' is combined in the metal film 15. -20- 201220382 <Metal substrate> The metal substrate 5 is formed by a plurality of metal layers of the visit to the field. The surface 5a of the metal substrate 5 is bonded to the surface 15b of the metal film 15 constituting the reflective structure 4 on the side opposite to the compound main body + the conductor layer 3. When the thickness of the metal substrate 5 is thicker than 150 μm, the manufacturing cost of the light-emitting diode is not good. Further, in the metal substrate 5, the thickness of the metal substrate 5 is 15 μm or less. When the thickness is thinner than 5〇μη, cracking, chipping, and warpage are likely to occur during processing. 'There will be a decrease in manufacturing yield. As a constituent of a plurality of metal layers, preferably two types of metal layers (ie, the first one) The metal layer 21# second metal layer 22) is formed by alternately laminating. The number of layers of the i-th metal layer 21 and the second metal layer of each metal substrate is preferably 3 to 9 layers, more preferably When the number of layers of the first metal layer 21 and the second metal layer 22 is two, the thermal expansion in the thickness direction becomes uneven, and the metal substrate is warped. Conversely, the i-th metal layer 21 is formed. When the number of layers of the second metal layer 22 is more than nine, the thickness of the second metal layer S2i and the second gold layer 22 must be thinned. The first metal layer 2 or the second metal is thinned. If the layer thickness of the single-layer substrate formed by the layer 22 is difficult to fabricate, the thickness of each layer will not be generated. Uniform, the characteristics of the light emitting diodes varies danger. Further, because the manufacturing difficulties of the single layer substrate, will yield danger of deterioration "of the manufacturing cost of a light diode. x The number of layers of the first metal layer 21 and the second metal layer 22 is odd. The number of stomachs. Preferably, the leaves are -21 - 201220382, in particular, three layers and + ^ ^ s ', and the two layers of metal layers which are formed with a metal layer are formed of the same metal traits. In this case, the same metal smear can be used to wet-etch the two metal layers of the bismuth metal layer + + ^ to the genus layer, thereby removing the portion corresponding to the line to be cut. <First Metal Layer> * When a material having a thermal expansion coefficient smaller than that of the compound semiconductor layer 3 is used as the second metal layer, it is preferable to use at least a material having a thermal expansion coefficient larger than that of the compound semiconductor layer 3 as the metal layer 2 (2ια, 2ιβ) By adopting such a configuration, since the thermal expansion coefficient of the entire metal substrate is connected to the thermal expansion coefficient of the chemical conversion semiconductor layer, warpage or cracking of the metal substrate when the compound semiconductor layer and the metal substrate are bonded can be suppressed, and light emission can be suppressed. Therefore, when a material having a thermal expansion coefficient larger than that of the compound semiconductor layer 3 is used as the second metal layer, it is preferable to use at least a material having a thermal expansion coefficient smaller than that of the compound semiconductor layer 3 as the first metal layer 21. (21 A, 21 Β) - As the first metal layer 21, for example, silver (thermal expansion coefficient = U.9 Ppm/K) and copper (thermal expansion coefficient = 16 5 m/m) 'gold (thermal expansion coefficient = 14.2 PPm/K), aluminum (coefficient of thermal expansion = 23 lppm/K), nickel (coefficient of thermal expansion = 13_4 ppm/K), and the like, etc. The thickness of the first metal layer 21 is preferably set to 5 μm or less. It is preferable to set it to 5 μm or more and 20 μm or less. Further, the thickness of the first metal 3521 may be different from the thickness of the second metal layer η. Further, the metal substrate 5 is formed of a plurality of second metal bismuth and second metal layer 22. In other cases, the thickness of each layer may be different from each other. -22 - 201220382 It is preferable to form a bonding auxiliary film or wafer bonding for stabilizing electrical contact on the bonding surface 5a of the metal substrate 5 and the surface 5b on the opposite side. When a eutectic metal of Au is used as the metal for connection of the metal film of the reflective structure, it is preferable to form a Ni/Au film from the side of the metal substrate 5 on the bonding surface of the metal substrate 5. The Ni film and the Au film can be formed by a coating. The bonding step can be easily performed. As the bonding auxiliary film, Au, AuSn, or the like can be used. Further, the metal substrate 5 is bonded to the compound semiconductor layer 3 The above-described method is not limited, and a well-known technique such as a diffusion bonding, an adhesive, or a room temperature bonding method can be applied. The total thickness of the first metal layer 21 is preferably 5% or more of the thickness of the metal substrate 5; % below, more It is preferably 10% or more and 30% or less, and more preferably 15% or more and 25% or less. When the total thickness of the first metal layer 21 is less than 5% of the thickness of the metal substrate 5, the first metal layer 21 having a high thermal expansion coefficient is used. The effect is reduced, and the heat dissipation function is lowered. When the thickness of the metal layer 21 is more than 5% by the thickness of the metal substrate 5, the crack of the metal substrate 5 caused by the heat when the metal substrate 5 and the compound semiconductor layer 3 are connected cannot be suppressed. That is, because of the large thermal expansion coefficient difference between the i-th metal layer 21 and the compound semiconductor layer 3, cracking of the metal substrate 5 due to heat occurs, causing joint failure. In particular, when copper is used as the first metal layer 21, the total thickness of copper is preferably 5% or more and 40% or less, more preferably 1% by weight or more and 3% by weight or less of the thickness of the metal substrate 5. 15% or more and 25% or less. -23- 201220382 The thickness of the metal layer 21 is preferably 5 μm or less, more preferably 5 μm or more and 20 μm or less. <Second metal layer> When a material having a thermal expansion coefficient larger than that of the compound semiconductor layer 3 is used as the first metal layer, the second metal layer 22 preferably has a thermal expansion coefficient smaller than that of the compound semiconductor layer 3. Made up of materials. By adopting such a configuration, the thermal expansion coefficient of the entire metal substrate is close to the thermal expansion coefficient of the compound semiconductor layer, so that the warpage or cracking of the metal substrate when the compound semiconductor layer and the metal substrate are bonded can be suppressed, and the fabrication of the light-emitting diode can be performed. Yield improvement. Therefore, when a material having a thermal expansion coefficient smaller than that of the compound semiconductor layer 3 is used as the first metal layer, the second metal layer 22 is preferably made of a material having a larger coefficient of thermal expansion than that of the compound semiconductor layer 3. For example, when the AlGalnP layer (thermal expansion coefficient = about 5 3 ppm/K) is used as the compound semiconductor layer 3, molybdenum (thermal expansion coefficient = 5.1 ppm/K) and tungsten (thermal expansion coefficient = 4.3 ppm/K) are preferably used. Chromium (coefficient of thermal expansion = 4.9 ppm/K), and the like are used as the second metal layer 22. The light-emitting diode of one embodiment of the present invention is a light-emitting diode 1 in which a metal substrate 5 is bonded to a compound semiconductor layer 3 including a light-emitting layer 2, and the metal substrate 5 is alternately laminated with a metal layer 21 The second metal layer 22 is formed of a material having a thermal expansion coefficient larger than that of the compound semiconductor layer 3, and the second metal layer 22 is made of a material having a thermal expansion coefficient smaller than that of the compound semiconductor layer 3. In the case of the composition, the heat dissipation property is excellent 'the crack of the substrate at the time of bonding can be suppressed', and the south voltage can be applied to emit light in the south. 24 - 201220382 The material of the light-emitting diode metal layer 22 according to the embodiment of the present invention is such that the thermal expansion coefficient is within ±1 · 5 ppm / K of the thermal expansion coefficient of the present invention, and the crack of the substrate during the bonding can be suppressed. High brightness illumination. The light-emitting diode metal layer 21 according to the embodiment of the present invention is made of aluminum, copper, silver, gold, nickel or the like, so that heat dissipation is excellent, and high voltage can be suppressed and light can be emitted with high luminance. The light-emitting diode metal layer 22 according to the embodiment of the present invention has excellent heat dissipation properties by molybdenum, tungsten, or the like, and can suppress light emission of a substrate at the time of bonding and emit light with high luminance. The light-emitting diode metal layer 21 according to the embodiment of the present invention is formed of steel, and the total number of layers of the second layer 22 and the second metal layer 22 of the second metal layer 22 is as follows. The crack 'can apply a high voltage and emit light with high brightness. [Method of Manufacturing Light Emitting Diode] Next, a method of carrying out the embodiment of the present invention will be described. In the light-emitting diode according to the embodiment of the present invention, the wafer-forming step includes forming a metal substrate and forming a metal-based compound semiconductor layer; and removing the chemical body 1 by etching, if In the second i-semiconductor layer 3', a high voltage can be applied to the heat dissipating body to form the body 1. If the substrate is formed by the first alloy, the body can be broken if the second structure is used. A method of manufacturing a photodiode of a substrate which is formed by using a first molybdenum and a first layer of molybdenum, and a first layer of three or more layers of a first gold layer to be bonded to each other is a compound semiconductor having a plurality of light-emitting layers on a metal layer plate.层层-25-201220382 The step of cutting the portion on the predetermined line. The wmw township is etched to remove the portion of the above-mentioned plurality of metal layers, the s, y, and the main y-layer on the aforementioned cutting line. And a step of severing the metal substrate by irradiating a portion of the metal layer with the removed portion along the arrow A in the plan view. First, the manufacturing steps of the metal + 』 ί 羁丞 plate will be described. <Manufacturing Step of Metal Substrate> In the case of the metal substrate 5, the first metal layer having a thermal expansion coefficient larger than that of the compound semiconductor layer 3 and the coefficient of thermal expansion are larger in the m 1 system. The second metal layer 'having a smaller thermal expansion coefficient than the material of the compound semiconductor layer 4 is formed by hot pressing. First, two first metal plates 21 and a substantially flat second metal plate 22 Cu are prepared as the first metal plate 21, and a metal plate 22 is used. . For example, Mo having a thickness of ΙΟμπι of 75 μm is used as the second second. 'As shown in FIG. 2A, the second and the upper gu are not inserted. The second metal plate 22 is inserted into the two first metal plates 21. Between and will overlap this configuration. Then, the above-mentioned ^^^ _ & is placed in a predetermined pressurizing device, and the first metal plate 21 is spotted at a high temperature. The person 1 and the second metal plate 22 apply a load in the direction of the arrow. Thereby, as shown in FIG. 2A, the i-th metal layer 21 is formed of a metal substrate 5 formed of three layers of CU (10 nm) in which the second metal layer 22 of Cu is M. The substrate 5 is, for example, a thermal expansion coefficient of 5-7 ppm/K, and a thermal conductivity of 220 W/m·κ. Further, after that, the size of the joint surface of the compound semiconductor layer 3 is matched.

After cutting, you can also mirror the surface with 斟矣&amp;,社&quot;&amp; I. -26-201220382 A bonding auxiliary film for stabilizing the electric contact can be formed on the joint surface 5a of the metal substrate 5. As the bonding auxiliary film, gold, platinum, nickel or the like can be used. For example, a gold film formed on the above-mentioned recording is formed by forming a nickel film of 2 μm on the bonding surface 5a of the metal substrate 5. Further, in place of the bonding assistant, the ytterbium metal for S η for wafer bonding may be formed. Thereby, the joining step can be simplified. &lt;Compound semiconductor layer and second electrode forming step> As shown in Fig. 3, a plurality of epitaxial layers are grown on one surface Ua of the semiconductor substrate 11 to form an epitaxial layered body 17. The semiconductor substrate 1 1 is a substrate for forming an epitaxial layered body 7 and is formed to have an inclination of 15 from the (100) plane, for example, on one surface 11 & The surface is doped with an n-type GaAs single crystal substrate. As a result, when an AmaInp layer or a layer is used as the epitaxial layered body 17, a gallium arsenide (GaAs) single crystal substrate can be used as the substrate on which the epitaxial layered body 17 is formed. As a method of forming the compound semiconductor layer 3, a metal 化学rganic Chemical Vapor Deposition (MOCVD) method, a molecular beam epitaxy (MBE) method, or a liquid phase pulverization (Liquid) may be employed. Phase Epitaxy: LPE) method. In this embodiment, decompression MOCVD using a material of a tritium aluminum ((CH3)3Al), a trisyl gallium ((CH3)3Ga), and a tridecyl indium ((CH3)3in) for a lanthanum constituent element is used. The law, and the layers of the epitaxial growth. Further, the doping raw material of Mg is made of dicyclopentadienyl magnesium ((CsH^Mg). In addition, the doping raw material of 'Si is dioxane (Si2H6) -27-201220382. In addition, phosphine (PH3) or hydrazine is used ( AsHs) is a raw material of the group V constituent element. Further, the p-type GaP layer 13 is grown at, for example, 750 ° C, and the other staggered growth layer is grown at, for example, 730 ° C. Specifically, first, by A buffer layer 12a formed of doped type 11 GaAs is formed on one side of the semiconductor substrate η. As the buffer layer 12a, for example, n-type GaAs doped with Si is used, and the carrier concentration is set to 2 x 10 〇 18 cm - 3 'The layer thickness is set to 〇2_. Next, the etch stop layer 12b formed of the Si-doped n-type (A1〇5Ga〇5) 〇5ln〇5p is formed on the buffer layer} 2a. The etch stop layer 1 2b is a layer which is used to prevent both the cladding layer and the light-emitting layer from being etched when the semiconductor substrate is removed by etching, and is formed, for example, by doping (Al〇.5GaQ.5) Q5ln()5p, and the layer thickness is taken then ' A contact layer 12c formed of doped Si-doped GaAs is formed on the etch stop layer 12b. After that, the n-type A1〇5ln〇 by doping S! The cladding layer 10a formed of 5p is formed on the contact layer i2c. Further, the undoped (AlQ 2Ga. 8) (j 5lnQ 5p / (AlG.7Ga().3) G5InQ5P2 1 〇 layered structure The formed light-emitting layer 2 is formed on the cladding layer 10a. Next, a cladding layer 1 formed of doped (10) type A1〇5ln〇5p is formed on the light-emitting layer 2. The p-type GaP layer 13 of the impurity Mg is formed on the cladding layer 10b. -28- 201220382 Then, the surface 13a of the P-type Gap layer i 3 opposite to the semiconductor substrate 丨丨 is mirror-polished to be ιμιη from the surface. The depth and the roughness of the surface are set to, for example, 〇18 nm. Thereafter, as shown in FIG. 4, the second electrode (ohmic electrode) 8 is formed on the surface 1 of the p-type GaP layer 13 opposite to the semiconductor substrate π. The second electrode 8 is formed, for example, by depositing Au having a thickness of 2 μm, which is formed on AuBe having a thickness of 4 μm, and the second electrode 8 is formed into a circular shape of 20 μm in a plan view at intervals of 60 μm. &lt;Reflecting Structure Forming Step&gt; Next, as shown in Fig. 5, the surface of the p-type GaP layer 13 opposite to the semiconductor substrate 的 surface 13a and the second electrode 8 is covered. A transparent conductive film 14 formed of an ITO film is formed in a pattern. Then, a heat treatment of 4501 is applied to form an ohmic contact between the second electrode 8 and the transparent conductive film 14. Subsequently, as shown in Fig. 6, a steaming method is used. In transparent conductive film! 4, the surface of the opposite side of the crystal layer body 17 is 1 4 a , and the film formed of the silver (A g) alloy is formed into a film of 〇.7μηι, and then a film formed of nickel (Ni)/titanium (Ti) is formed into a film. 0.5 μπι 'film formed of gold (Au) is formed into a film ΐμηι, and a metal film 15° is formed to thereby form a reflective structure 4 formed of the metal film 15 and the transparent conductive film 14 » &lt;Metal substrate bonding step&gt; Then, as shown in FIG. 7, the semiconductor substrate 11 on which the reflective structure 4 and the epitaxial layered body 17 are formed and the metal substrate 5 formed by the manufacturing process of the above-described metal substrate are carried into a decompression device, and the reflective structure 4 is disposed. After the bonding surface 4a and the bonding surface 5a of the metal substrate 5 are overlapped with each other 0 -29-201220382, 'the inside of the decompression device is exhausted to 3 x ; [ 〇 _ 5pa, after heating the semiconductor substrate 11 and the metal substrate 5 In the state of 40 01:, a load of 5 〇〇 kg is applied, and the joint surface 4a of the reflection structure 4 is joined to the joint surface 5a of the metal substrate 5 to form the joint structure 18. &lt;Semiconductor Substrate and Buffer Layer Removal Step&gt; As shown in Fig. 8, the semiconductor substrate 11 and the buffer layer 12a are selectively removed from the bonded structure 18 by an ammonia-based etchant. &lt;Silver engraving preventing layer removing step&gt; Next, the etching stopper layer 12b is selectively removed by a hydrochloric acid-based etchant. Thereby, the compound semiconductor layer 3 having the light-emitting layer 2 is formed. <First electrode forming step> Thereafter, a conductive film for an electrode is formed on the surface 3a of the compound semiconductor layer 3 opposite to the reflecting structure 4 by a vacuum deposition method. As the conductive film for an electrode, for example, a metal layer structure formed of AuGe/Ni/Au can be used. For example, when AuGe (Ge mass ratio: 12%) is formed into a film thickness of 15 μm, Ni is formed into a film having a thickness of 0·05 μη1, and Au is formed into a film having a thickness of 1 μπ1. Then, the conductive film for an electrode is patterned into a circular shape as a n-type ohmic electric power in a plan view by a general photolithography method to produce a wafer of a light-emitting diode. The contact layer 12c is used by using, for example, ammonia water (ΝΗ4〇Η)/hydrogen peroxide (Η2〇2)/pure water (Η2〇) chelating solution used in the patterning of the first electrode forming step. A portion other than the lower surface of the n-type ohmic electrode (first electrode) 6 is removed by etching. Thereby, the planar shape of the 'n-type ohmic electrode (i-electrode) 6 and the contact layer i 2c is substantially the same as shown in Fig. i. -30-201220382 After the enthalpy is carried out for 3 minutes, for example, at 42 ° C for 3 minutes, the n-type ohmic electrode (each metal of the first electrode is alloyed. The n-type ohmic electrode (first electrode) 6 can be made low-resistance. Referring to Fig. 9A to !n or λ, tl, Fig. 9C' is a description of the removal step (front step) of the portion on the line to cut of the metal layer of the compound semiconductor layer. <Compound semiconductor layer removal step> First, as shown in Fig. 9A As shown, a resist is applied onto the compound semiconductor layer 3 of the light-emitting diode, and a resist pattern η including a predetermined line pattern of the cut of a wide δ〇μΓη is formed by photolithography. The exposed compound semiconductor layer is removed by etching. The part on the 疋 line (refer to the symbol 3Α). The removal width of the semiconductor layer is determined by the removal width. Therefore, in order to reduce the removal width of the semiconductor layer generated after laser cutting, it is better to use the street. Wide width, wide, and cut, for example, from the front of the laser and i|. The monthly condition is preferably wider than the cutting width of the laser. In addition, the laser is irradiated from the back. Broken as The cutting width using the laser is about 2 - &lt; front metal layer removing step &gt; Next, as shown in Fig. 9 ft π - , the circle β is not, the wafer is immersed in the trichloride etching to remove the 1TO layer 14 and Ni The portion of the layer 33 is semiconductive under the portion = (reference numerals 14A, 33a). As shown in Fig. 9C, the wafer is immersed in the gasification gas system P and immersed in water, for example, 2~ 3% of the hydrogen fluoride recording, 〇〇 热处理 heat treatment, and the front face of the L-shaped crystal * degree of the cutting layer removed - the debris 'shooting cut L line laser about 40 μ m &gt;, Preferably, the solution of the iron solution layer, 0.1% -31 - 201220382 ammonium fluoride solution, is etched away from the portion of the Ti layer 34 below the removed portion (see reference numeral 34A). Subsequently, the wafer is immersed in the Au system. The etching liquid, that is, the portion which is immersed in, for example, a cyanide-based etching solution, is removed from the removed portion of the Au layer 35, 36 (refer to reference numeral 3 5 A, 3 6 A). Then, the wafer is immersed. The etching rate of Ni and Cu is faster than that of Mo, and the three-iron solution of Ni'Cu can be selectively etched. The lower portion of the Ni layer 37 and the Cu layer 21A are removed until the Mo layer 22 is exposed (reference numerals 37A and 21 AA). By the above procedure, the compound semiconductor layer and the front metal layer on the line to be cut can be removed. (Back surface metal layer removing step) (Back surface etching step) Referring to FIG. 1A to FIG. 1C, the removal step of the portion on the line to cut of the back metal layer will be described. First, as shown in FIG. A resist is applied onto the Au/Ni layer formed on the metal substrate 5 on the back surface of the wafer of the light-emitting diode, and a resist pattern 41 including, for example, a planned cutting line pattern having a width of about 40 μm is formed by photolithography. Next, as shown in FIG. 10A, the wafer is immersed in the au-based recording liquid, that is, immersed in, for example, a cyanide-based etching liquid, and the portion below the removed portion of the Au layer 42 is removed by etching (the symbol 42A is shown). section). Next, as shown in FIG. 10C, the wafer is immersed in a solution of N, cu, which is faster than the etching speed of Mo, and selectively etches the ferric chloride solution of Ni and Cu, and etches away the Ni layer. 43 and a portion of the Cu layer 21B below the removed portion until the Mo layer (the portion indicated by the symbols 43A and 21BB) is exposed. -32- Back surface side step layer step by step layer step by step &lt; precut 201220382 With the above steps, the back side Cu compound semiconductor layer removal step and front metal layer removal step metal removal step can be removed It is preferable that the layer removing step be carried out entirely, but in the case where the laser is applied from the front side, even if only the compound semiconductor layer removing step is performed in the metal layer removing step, the amount of debris generated at the time of laser cutting can be reduced. Similarly, when the laser irradiation is performed from the back surface, only the compound semiconductor layer removing step and the back metal layer step are performed, and the debris on the back side generated at the time of laser cutting can be reduced, and all the removing steps can be performed. The compound semiconductor removal step, the front metal layer removal step, and the back metal layer removal may be performed in the order of the back metal layer removal step, and the compound semiconductor layer removal step and the front metal layer removal may be sequentially performed. Further, it may be carried out in the order of the compound semiconductor layer removing step, the back surface removing step, and the front metal layer removing step. The back layer removing step and the front metal layer removing step may be simultaneously performed. However, in the case of performing laser irradiation from the front side, the steps of the back gold removing step, the compound semiconductor layer removing step, and the front metal layer step are relatively simple. On the other hand, in the case of shooting from the back surface, the thin laser cutting step is performed in the order of the compound semiconductor layer removing step, the front gold removing step, and the back metal layer removing step. For example, after performing all the removing steps, The portion of the back line on which the metal layer is removed is irradiated with a laser and cut into a Mo-cut metal substrate. Floor. The shot, the shot and the front side are removed. After the conductor goes back, go to the metal surface gold line. The genus layer removes the laser genus layer. Cutting the layer -33- 201220382 In order to utilize the cutting condition of the laser, the conditions used for the LED element step can be taken. The ruler &quot;^ uses a laser with a wavelength of 355 nm and a delivery speed of 20 mm/seC to cut the metal substrate. Laser scanning of laser cutting can be performed in multiples. In this case, the width of the laser beam can be changed to perform the cutting. The laser cut surface of the metal substrate is preferably plated with Au afterwards. &lt;Light Emitting Diode Lamp&gt; A light-emitting diode diode lamp according to an embodiment of the present invention will be described. Fig. 1 is a schematic cross-sectional view showing an example of a light-emitting diode according to an embodiment of the present invention. As shown in FIG. 11, the light-emitting diode lamp of the present invention has a package substrate 55, two electrode terminals 53 and 54 formed on the board 55, and a slave: the speaker and the upper surface are mounted on the electrode terminal 54. The body 1 and a transparent resin (sealing resin) 51 formed of a shovel @ jjy Ο·, Ώ „ & 且 覆盖 覆盖 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The layer 3, the reflective substrate, the metal substrate 5, the first Leito (the Dulle ό electrode ό and the second electrode 8, the standing plate 5 is disposed to be connected to the electrode terminal scorpion 53. Further, the first electrode terminal 54 is cited The green yoke, the 'connection'. The yoke is applied to the electrode terminals $3, 54 through the first electrode 6 and the first electrode 8 is applied to the compound semiconductor _ = the luminescent layer included in the semiconductor layer 3 emits light = on the front side The direction f is taken out. The encapsulation of the package substrate 5 5 [j ρ 上 , , Λ . , J thermal impedance is set to ίο c / w or less. μ makes it possible to apply 1 Hz or more of the NVC, and the illuminating layer 2 Performing | 纟, heat-dissipating function, can be entered - the cow shakes the ancient gossip hair first and also the V-edge light-emitting diode i The installed base of hair state lamp side: an optical unit 4 and the base metal 3 through voltage,, i.e. sent only the military -34-201220382

Further, the shape of the package substrate is not limited thereto, and other shapes of the sealed substrate may be employed. Even in the case of an LED lamp product using a package substrate of another shape, it is possible to sufficiently ensure heat dissipation, so that a high-output, high-shell LED light can be produced. [Examples] First, a wafer having the following composition was formed in sequence: a light-emitting layer of 10 pairs of (A1〇2Ga〇.8)〇5ln0.5P/(Al0,7Ga0.3)0.5In0.5P a GaP layer having a thickness of 4 μm; a thickness of 2 μη1; a reflective structure comprising an Ag layer of 0 7 μm, a Ni/Ti barrier layer of 0.5 μm, an Au layer of Ιμηη, and a metal substrate comprising ι〇μηι a three-layer structure of a Cu layer of a layer/75 μm Mo layer/ΐ〇μιη; and a 2 μη Ni layer formed on both sides of the metal substrate, and a 1 μηη Au layer. On the front side of the wafer, the front side of the metal substrate was removed by etching to the Cu layer to form a groove having a width of 60 μm. Further, on the back surface, the Cu layer on the back side of the metal substrate was removed by engraving, and a groove having a width of 40 μm was formed. Then, the conditions of the laser light source wavelength of 355 nm and the discharge speed of 20 mm/sec were used to perform laser cutting of the M layer of the metal substrate on the front side of the wafer. A wafer-shaped light-emitting diode fabricated in this manner was observed using a laser microscope. Although the chips adhered to the side faces of the Cu layer on the front side of the metal substrate and the side faces of the Cu layer on the back side, no debris was observed on the exposed surface of the Cu layer on the front side and the exposed Cu layer on the back side. [Industrial Applicability] • 35- 201220382 Benlem is particularly useful in the production method, cutting method, and light-emitting method of using a metal substrate as a body. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an embodiment of the present invention. 2A is a step showing an example of manufacturing a metal substrate for use in an embodiment of the present invention. FIG. 2B is a view showing an example of manufacturing a metal substrate according to an embodiment of the present invention. FIG. 3 is a view showing the implementation of the present invention. A step-by-step diagram of an example of a method of morphology.实施 Implementation of the sorrow Figure 4 is a step view showing a step of an example of the method of the present invention. Fig. 5 of the embodiment of a is a step view showing a step of an example of the method of the present invention. Fig. 6 is a cross-sectional view showing the steps of the method of the present invention. Fig. 7 of the embodiment of the present invention is a step view showing a step of an example of the method of the present invention. Figure 8 of the embodiment of β &lt; afl shows the invention

A step-by-step diagram of an example of a method. A, U Luoming's Embodiment 1 FIG. 9A is a cross-sectional view showing a light-emitting diode of an example of a light-emitting diode of an industrial aspect of a light-emitting diode of a substrate. . A cross-sectional view of the light-emitting diode. Manufacture of light-emitting diodes, manufacture of light-emitting diodes, manufacture of light-emitting diodes, manufacture of light-emitting diodes, manufacture of light-emitting diodes, manufacture of light-emitting diodes, light-emitting diodes -36-201220382 Fig. 9B A cross-sectional view showing a step of an example of a method for producing a light-emitting diode according to an embodiment of the present invention. Fig. 9C is a cross-sectional view showing the steps of an example of a method of manufacturing a light-emitting diode according to an embodiment of the present invention. Fig. 10 A is a cross-sectional view showing a step of an example of a method of manufacturing a light-emitting diode according to an embodiment of the present invention. Fig. 10B is a cross-sectional view showing the steps of an example of a method of manufacturing a light-emitting diode according to an embodiment of the present invention. Fig. 10C is a cross-sectional view showing the steps of an example of a method for producing a light-emitting diode according to an embodiment of the present invention. Fig. 1 is a cross-sectional view showing an example of a light-emitting diode lamp including a light-emitting diode according to an embodiment of the present invention. [Description of main component symbols] 1 illuminating--polar body (light-emitting diode wafer) 2 luminescent layer 3 compound semiconductor layer 4 reflective structure 5 metal substrate 14 transparent conductive film 15 metal bonding film 21 (21 A ' 21B) 1 Metal layer 22 second metal layer 50 light-emitting body lamp 55 metal substrate-37-

Claims (1)

201220382 VII. Patent application scope: [A method for manufacturing a light-emitting diode] which is a method for manufacturing a wafer and a light-emitting diode by irradiating a laser onto a wafer, and has the following steps: a wafer base, a metal substrate formed of a plurality of metal layers, and a compound semiconductor layer including a hair-generating layer formed on the five-substrate substrate; 疋 removing the compound layer such as a semi-exposed Αιτ ν μ by etching The step of cutting off the portion of the predetermined crucible; 疋 疋 疋 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 利用 ' ' ' ' ' ' The step of deepening the surface of the surface. and /, the step of cutting the metal substrate by removing the laser and removing the laser from the metal layer in plan view. * Partial illumination 2. If the illuminating _ w 疋 极 极 , , , , , , , , , , 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断 切断Further, in addition to the above-mentioned plurality of metal layers, the aforementioned laser irradiation utilizes at least one layer of the etching, and the opposite of the predetermined line on the cutting line, which is the opposite of the above-mentioned plurality of etchings, such as the light-emitting diode of the first or second aspect of the patent application. ^骒. Wherein the plurality of metal layers comprise a coefficient of thermal expansion greater than a coefficient of thermal expansion of the conductor layer of the prior art method; the compound half has a thermal expansion coefficient greater than that of the compound semiconductor layer and a material having a coefficient. Thermal expansion 4. As in the case of any of the alloys, raw materials, and the like of the light-emitting diode of the patent application 帛3 item, the thermal expansion of the compound semiconductor layer is higher than the thermal expansion coefficient of the compound semiconductor layer: The material is made of aluminum, copper, silver, gold, and the like. The method of manufacturing the light-emitting diode according to claim 3, wherein the thermal expansion coefficient of the semiconductor layer is higher than that of the compound semiconductor layer. A material having a small coefficient of thermal expansion is formed of any one of molybdenum, tungsten, chromium or the like. 6. The method of producing a light-emitting diode according to claim 1 or 2, wherein the plurality of metal layers are three metal layers. 7. The method of manufacturing a light-emitting diode according to claim 6 wherein, in the three metal layers, the metal layer of the second metal layer is formed of the same metal material. 8. The method of manufacturing a light-emitting diode according to the seventh aspect of the invention, wherein the metal layer of the one layer is formed of molybdenum, and the metal layer of the two layers is formed of copper. 9 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The metal layer of the aforementioned layer. 1. A method of manufacturing a light-emitting diode according to the first or second aspect of the invention, wherein the light-emitting layer of the month 1 comprises an AlGalnP layer or an AlGaAs layer. 11. A method of producing a light-emitting diode according to the first or second aspect of the invention, wherein the compound semiconductor layer and the metal substrate are provided with a reflective structure. 12. A method for cutting a wafer by irradiating a laser to cut a wafer-shaped light-emitting body, the wafer having a metal substrate formed of a plurality of metal layers and a compound formed on the metal substrate Semiconductor layer-39-201220382 The cutting method is characterized by: a step of removing a portion of the compound semiconductor layer on a line to cut by etching; and removing at least one layer of the plurality of metal layers from the side of the laser irradiation surface by etching a step of cutting a portion on the predetermined line; and a step of severing the metal substrate by irradiating a portion of the metal layer with the removed portion in a plan view. The cutting method of claim 12, wherein before the step of cutting the metal substrate, at least one layer of the opposite side of the laser irradiation surface among the plurality of metal layers is removed by etching. The aforementioned step of cutting a portion on the predetermined line. 1 . A light-emitting diode manufactured by the method for producing a light-emitting diode according to claim 1 or 2. 1 . A light-emitting diode comprising a metal substrate formed of a plurality of metal layers and a compound semiconductor layer including a light-emitting layer formed on the metal substrate, wherein the light-emitting diode is characterized by: the metal substrate The side surface is formed by a wet etched surface and a laser cut surface which are arranged in the thickness direction of the metal substrate, and a side surface of the metal layer of at least one of the compound semiconductor layer sides and the compound among the plurality of metal layers The side surface of the metal layer of at least one of the opposite sides of the semiconductor layer is formed by a wet #facet, and the by-product generated by the laser irradiation adheres only to the side surface of the metal substrate. -40-201220382 1 6 . The light-emitting diode of claim 15 wherein the plurality of metal layers are three-layer metal layers, and the side layers of the metal layers of the second layer of the metal layer Formed by the wet etched surface, the side surface of the metal layer of the first layer is formed by the laser cut surface. 17. The light-emitting diode of claim 16, wherein the metal layer of the first layer is formed of 4 meshes, and the metal layer of the second layer is formed of copper 0-41-