TW201216458A - Electric device package - Google Patents

Abstract

An organic electroluminescent(EL) device package 1 has an organic EL layer 2 hermetically sealed in an internal space, and includes a device substrate 3, a sealing substrate 4, a glass frit 5 and a protective film. The organic EL layer 2 is disposed on the device substrate 3. The sealing substrate 4 faces across an interval to a surface of the device substrate 3 at the side of the organic EL layer 2. The glass frit 5 hermetically seals the interval between the device substrate 3 and the sealing substrate 4 by surrounding the periphery of the organic EL layer 2. The protective film is disposed between the device substrate 3 and the glass frit 5, and is used to protect an electrode from the laser irradiated for melting the glass frit 5. Furthermore, the protective film, for example, is a dielectric multilayer film 8 which is effective as a reflective film for reflecting the laser, and the dielectric multilayer film 8 is formed by laminating a low refractivity dielectric layer and a high refractivity dielectric layer alternatively.

Description

201216458, VI. Description of the invention: [Technical field to which the invention pertains] The present invention relates to an electrical component package, which is caused by oxygen or moisture, etc., and will have [prior art] Display devices (organic displays) have been developed in various fields, and have been put into practical use in some fields such as mobile phone type display devices. The = used in the organic EL display device is required to be exposed to oxygen or moisture in the surrounding environment. Therefore, when it is put into practical use, it is organically sealed by the state in which the organic EL is assembled in the state of the seven-layer hole in the maintenance of the seal quality and the second display. a component package, generally I asked 13⁄4 2 / on the component substrate on which the organic EL layer is disposed, the surrounding substrate is disposed opposite to each other, and in the impurity state, the organic EL layer is packaged on the substrate The way around is made of frit private g. 7: The gap between the element substrate and the sealing substrate is airtightly sealed, and the glass frit is opened by the laser light from the side of the self-sealing substrate, and the glass frit is softened to dissolve the glass frit. On the element substrate and the sealing substrate, a hermetic sealing structure is formed. When the laser beam is irradiated with light, there is a possibility that electric power is supplied from the outside to the electrode of the organic EL layer due to the irradiation heat of the light of the light (for example, 201216458. The indium tin oxide (ITO) electrode or the organic layer is damaged. The reason is as follows: that is, an electrode for supplying electric power to the organic EL layer from the outside is disposed in the lower portion of the glass material. If the irradiation heat of the laser light is not taken, the electrode at the lower part of the material may be improperly heated due to the irradiation heat of the laser light to cause thermal damage, and the wire may be broken when it is = and if so The electrode is applied for railing, == is transferred to the organic EL layer, and it is also possible that the organic EL layer causes thermal damage. When each box is fabricated with an organic EL device package, it is usually sought after. Prevent mine The heat of the radiant heat of the illuminating light is transmitted to the electrode or the organic layer of the organic layer. The following is disclosed in Patent Document 2: The side of the f-plate of the force of the cow, the metal layer and the organic layer are used to improve the connection. The EL layer rail is to be bonded to the layer. Thereby, even if the substrate is added to the substrate, the irradiation heat of the f-light is difficult to be transmitted to: the electrode of the effect layer can be expected 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 As disclosed, in the case of using the surface layer of the reflective film (four) which reflects the laser light, if the metal layer is directly connected to the material, the county law maintains the adhesion between the two. Therefore, it must be in the metal layer. An improved layer for improving the adhesion between the glass frit and the 'in the case where the metal layer is in contact with the electrode connected to the organic element, the problem that the metal layer and the electrode are electrically connected to each other' must also occur in the metal Between layer and electrode The insulating layer is inserted. Therefore, there is a problem that the degree of freedom of the design of the organic EL device package is reduced. (4) Although the above-described organic EL device has been described as an example, it is easy to use an electrical component other than the organic EL device. An electrical component that is affected by the external environment and is hermetically sealed by a glass frit may cause the same problem. Moreover, it is not limited to a display device, and electrical use is used in other fields such as a peptide device or a solar cell. The same problem may occur in the case of component packaging. SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and a technical object thereof is to ensure the degree of freedom in designing an electrical component package and to reduce the fusion of the frit as much as possible. The applied heat of the laser light causes the electrode or electrical component to be exposed to the situation. In order to solve the above problems, the present invention provides an electronic component package including: an element substrate on which an electrical component is disposed; a sealing substrate that faces the surface of the component substrate on the side of the electrical component with a space therebetween; and a glass frit 'The air gap is sealed between the element substrate and the sealing substrate so as to surround the periphery of the electrical component; the electronic component package 6 201216458 is characterized by including a protective film between the glass frit and The invention relates to the invention of the substrate substrate and the second invention as a specific example. The first embodiment includes the following first: an element package, including: an element substrate, and a surface spacer on the side of the electric element; : and = the upper plate of the substrate _ seal; and the _ into the two-layer film irradiated by the glass material, the dielectric; the film::: the earth-like film contains a dielectric multi-dielectric layer alternate Laminated. , _ 士 dielectric layer and high refractive index Reflection: ===: The layer of electricity that is irradiated is ί gentleman layer = the force improvement layer, and can also maintain the connection with the slope i 良好 well. Moreover, due to the conditions of the adhesion of the dielectric multilayer film and the adhesion of the glass material, the following two conditions: == improved conditions, thereby impairing the design of the electrical component package two degrees of freedom 4 to 201216458 · Moreover, As long as the dielectric multilayer film is as described above, the laser light to be used can be selected by adjusting the material of each of the refractive index dielectric layer and the local refractive index dielectric layer. The reflectance is easily observed in the wavelength band. Therefore, if laser light is irradiated while the glass frit is melted, the laser light is surely reflected toward the frit side by the dielectric multilayer film, and is effectively used for heating the frit. Therefore, the laser light irradiated to the electrodes or the like through the dielectric multilayer is reduced as much as possible, so that it is possible to prevent the occurrence of a situation in which the laser light is turned into a t pole or the f gas element is not damaged. ..., the description of the composition of the towel, the dielectric f can be lightly connected to the glass frit, or directly formed on the electrode connected to the electrical component. = 'As described above', since the adhesion of the dielectric multilayer film to the glass frit is simplified in the connection with the electrical component, or the direct formation, the manufacturing becomes easy, and the electrical component is sealed with a low refractive index. The refractive index of the medium layer (4) is b or more. The refractive index of the lower refractive index dielectric layer is 17 or more. The fold 2 ==; 1 electricity; the layer and the high refractive index dielectric layer between the first _ degrees ' can be well maintained for the lightning rate 'fit multi-layer 臈 for the reflection of laser light to break ::: side 乂Severely prevent the occurrence of damage to the electrodes or electrical components caused by the exposure of the laser light to the 201216458u. The above composition makes the glass frit preferably contain: 80 wt ° /. (% by mass) ~ 99.7 wt% 无机 Inorganic powder containing glass powder containing Sn0 and 〇 3 wt% to 20 wt% of pigment. Here, the "glass powder containing Sn 」" means a glass containing 20 mol% or more of Sn 作为 as a glass composition. Further, "inorganic powder" means an inorganic material powder other than a pigment, and = often means a mixture of a glass powder and a refractory filler. As described above, since the glass frit contains the glass powder containing Sn0, the softening point of the glass frit is lowered, and the softening point of the entire glass frit is also lowered. In addition, when the inorganic powder containing the glass powder containing SnO is in the above numerical range, the softening point of the glass frit is appropriately lowered, so that welding (sealing) by laser light can be completed in a short time, and it is also possible to improve The welding strength. On the other hand, when the content of the inorganic powder is less than 80% by weight, the softening flow of the glass frit is insufficient at the time of welding by laser light, and it is difficult to maintain high welding strength. Further, the glass frit contains 0.3 wt% to 20 wt% of the pigment. When the content of the pigment is limited to 0.3 wt% or more, it is easy to absorb the laser light from the glass frit, so that the irradiation heat of the laser light can be efficiently applied to the glass frit. Therefore, it is easy to locally heat the portion of the frit which should be welded only, thereby preventing thermal damage of the electrode or the electric component. On the other hand, when the content of the pigment is controlled to 20 wt% or less, when the glass frit is welded by the irradiation heat of the laser light, the occurrence of devitrification of the glass frit can be prevented. In this case, it is preferable that the glass powder containing Sn , contains, as a glass composition, 311 Å of 35% to 7 % by mol%, and 9 201216458 P2O5 of 10% to 3% by weight. In this way, the low melting point characteristics of the glass frit and the water repellency of the material are maintained. And the second invention is an electrical component package board, which is provided with electrical components; the sealing substrate, the surface of the above-mentioned electrical component side of the substrate of 70 substrates is opposite to the electrical component of the component. In the surrounding manner, the above-mentioned component ==== 匕 film, the metal oxide film is disposed between the above-mentioned reverse glass frit, and is used for self-welding the above-mentioned BSH glazing protective electrode. According to such a configuration, the (four)-shot laser has an oxygen=material film between the element substrate and the glass frit, so that when the glass frit is irradiated with the laser light glass frit, that is, when the germanium and thunder are mixed, the suppression can be suppressed. The flaw caused by the irradiation of the laser light, and the contact of the frit with the electrode is avoided as much as possible. According to such a configuration, a strong bonding strength can be obtained even if an improvement layer is not provided in order to improve the contact force with the glass frit. Further, since the metal oxide layer does not have conductivity, electrical insulation between the electrodes connected to the electric component can be ensured without providing an insulating layer. As a result, the degree of freedom in designing the electrical component package is increased, and the manufacturing cost of the electrical component package is reduced. In the above configuration, the metal oxide film preferably has a thickness of from 1 nm to 500 nm. In this way, it is possible to prevent peeling between the glass frit and the metal oxide film after the laser welding, and to reliably protect the electrode. It is preferable that the metal oxide film is Si〇2, Zr02, and belongs to any one of oxides Al2〇3, Ta2〇5, and Nb2〇5. These gold 3 films are particularly excellent in adhesion or insulating properties to the glass frit. The upper or the best metal oxide film is directly connected to the glass frit gas element sealing electrode == element connected electrode. So, the electricity rate; if ancient. β I·, +, A is simplified, so the manufacturing efficiency of the electrical component package = 13 it's excellent metal film and glass bonding force, glass: = [This, the metal oxide film can be directly welded to the glass electrode . S : The oxide film is formed directly in the 与 ί ί 与 ' ' 较佳 较佳 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' 8 8 8 8 8 8 8 8 8 8 〇5 plus %~2〇t this, because the frit contains Sn. The glass powder, so that the softening point of the glass powder is lowered, the softening point of the glass frit is also lowered. On the other hand, when the inorganic powder containing the Lang powder containing Sn0 is set to the above numerical range, the softening point of the glass frit is moderately lowered, so that the laser welding can be completed in a short time, and the welding strength can be improved. In this case, it is preferable that the glass crucible containing Sn0 contains, as a glass composition, Sn5, which is 35% by mole%, and (9)5 which is ~~. Thus, the low melting point characteristics of the glass frit are maintained, and the water repellency of the glass frit is easily improved. [Effects of the Invention] As described above, according to the present invention, the degree of freedom in the design of the electrical component package is ensured, and the damage of the electrode or the electrical component caused by the irradiation heat of the laser light 201216458 applied during the splicing of the glass frit can be reduced as much as possible. State of affairs. [Embodiment] First, an embodiment of the first invention will be described with reference to the accompanying drawings. In the following, an organic component package in which an organic a display is mounted is described as an electrical component package as an example. 1 is a longitudinal cross-sectional view showing a schematic configuration of an organic a-element package. FIG. 4 includes an elemental substrate 3 in which a layer 2 is formed as a basic structure, and the substrate 3 is interposed therebetween. The sealing substrate 4 facing the surface on the side of the organic EL layer 2, and the frit 5 which is hermetically sealed around the periphery of the organic EL layer 2 and hermetically sealing the gap between the element substrate 3 and the sealing substrate 4 1 This embodiment shows that the element substrate 3 and the sealing substrate 4 include, for example, a glass substrate having a thickness of 0.05 mm to 0.7 mm. The first electrode 6 and the second electrode 7 which are connected to the organic EL layer 2 are disposed on the element substrate 3, and the band 6 is thick and thick. The electrode 6 and the electrode 7 pass through the lower portion of the glass = from the organic EL layer 2 It is given to the EL layer of the Fengshang μ machine, and the electrode 6 and the electrode 7 are branched as shown in Fig. 2 according to the pattern. Further, the first electrode 6 on the organic E side is formed, for example, by the surface of the transparent electrode film fT shield 2, M, T 7ZVe Z 2 ", J ^ ^ 祺 . Both of them can be made of a transparent electrode. Further, as shown in Figs. 1 and 2, the self-expanding light is irradiated from the side of the sealing substrate 4 to the glass frit 5, and the laser beam 5 irradiated by the slab is heated.

201216458 - - - - j-lX is softened and welded to the element substrate 3 and the sealing substrate 4, thereby forming the gas-filled sealing structure of the package 1. Further, as the laser L, for example, an infrared laser (wavelength of 700 nm to 25 〇〇 nm) is used. Here, when the frit 5 is melted, if the electrode 6 and the electrode 7 are added by the irradiation heat of the laser light, the electrode 6 and the drain 7 may be thermally damaged. Further, the heat is transmitted to the organic EL layer 2 through the electrode 6 and the electrode 7, and it is also possible to cause thermal damage to the organic EL layer 2. Therefore, in the present embodiment, the dielectric multilayer film 8 functioning as a reflection film is inserted between the glass frit 5, the electrode 6, and the electrode 7, so that the f-emitting light is directed to the opposite side of the electrode 6 and the electrode 7, that is, the glass. Material 5 side reflection. The dielectric multilayer film 8 includes a film in which a low refractive index dielectric layer and a high refractive power layer are alternately laminated, and the reflectance in the band (for example, 8 〇 8 nm) of the wavelength of the laser light used is Set to 5〇% to 90% to D. ° sheep, and σ, the low refractive index dielectric layer is formed of a material having a refractive index of 1.6 or less, preferably having a refractive index of i 33 Μ 6 , and some materials such as dioxo (Si 〇 2), Oxidized Mingbei (2 3), =匕, (LaF3), magnesium (MgF2), sodium hexafluoride (Na3AlF6) 1 ί, the refractive index of the low refractive index interlayer is set to nl, and the thickness is set to field light When the wavelength is λ, the optical film thickness (nlxdl) of the low refractive index dielectric layer is set to λ/4. The age-appropriate dielectric layer is formed of a material having a refractive index of 1/7 or more, and is formed of a material f having a refractive index of L7 to 2·5. Examples of the materials include the following compounds, such as titanium oxide (Ti02), zirconia 13 201216458 (Zr〇2), pentoxide group (Ta2〇5), and pentoxide oxide (Nb2〇5). Cerium oxide (La2〇3), nitriding cerium (Si#4), oxidized (γ2〇3), zinc oxide (Zn〇), zinc sulfide (ZnS) or indium oxide (In2〇3) as the main component, and Titanium oxide (Ti02), tin oxide (SnO), cerium oxide (Ce〇2), and the like are added in a small amount. When the refractive index of the high refractive index dielectric layer is n2, the thickness is d2, and the wavelength of the laser light is λ, the optical film thickness (n2xd2) of the high refractive index dielectric layer is set to λ/4. Integer multiple. Further, in the case of using laser light having a human body of 12 〇〇 nm or more, Si 〇 2 can be used, and when laser light of nine 〇〇 17 nm or more is used, Ge 〇 2 can also be used. Further, the dielectric multilayer film 8 preferably has a total of four or more layers of a low refractive index dielectric layer and a high refractive index dielectric layer. Further, in the dielectric multilayer film 8, it is preferable that the thermal expansion coefficients of the low refractive index dielectric layer and the high refractive index dielectric layer are different. As described above, the stress caused by the thermal expansion at the time of welding by the laser light is greatly alleviated as compared with the case where the reflection film of the laser light is formed in a single layer, and cracks are less likely to occur on the film. As a result, it is possible to surely prevent the occurrence of a situation in which oxygen or moisture partially intrudes from the dielectric multilayer film 8. The reason is as follows. In other words, in the case of forming a multilayer film on a substrate having a low thermal expansion coefficient such as glass, a layered structure in which a layer having an internal stress as a compressive stress and a layer having an internal stress as a tensile stress are alternately stacked are used. Further, the internal stress of the entire multilayer film is reduced, whereby a highly reliable multilayer film can be formed. In particular, the internal stress of the multilayer film which is formed on a substrate which exhibits a low thermal expansion coefficient (37 χ 1 〇 -7 / Å (hereinafter)) such as an alkali-free glass exhibits the above-described characteristics as a specific example. In the case where si〇2 as a low refractive index material and a high refractive index material & -rll 201216458 Tl〇2 are laminated on a non-glass substrate, the interior of Si〇2 Lang should be a compressive stress, and Ti〇2 Lang The internal stress tends to be tensile, so that the internal stress of the SiO 2 film and the TiO 2 film cancel each other, and the internal stress of the entire multilayer film is reduced. 曰 Here, 'for the material of the glass frit 5, for example, the following materials can be used: 80 wt % to 99.7 wt% of an inorganic powder containing a glass powder containing Sn0, and 0.3 wt% to 20 wt% of a pigment. In this case, the content of the inorganic powder is preferably 9 G wt% to 99% by weight, more preferably 95. Wt%~99 wt%, especially preferably 97 wt%~99 soil. If the content of inorganic powder is small, the softening flow of frit 5 is insufficient when the ship is connected, and it is difficult to mention the strength of the joint. The content of the powder is more than 99.9 wt% 'the relative pigment content Therefore, the absorption performance of the laser light of the glass frit 5 is reduced. On the other hand, if the content of the pigment is too large, the thermal stability of the glass may be lowered. The average particle diameter 仏 of the glass transition containing SnO is preferably less than 15 μπι, more preferably 〇.5 μιη~1 () ton, especially preferably i 哗 5 ton. If the average particle size of the glass powder containing f SnO is limited to less than 15 qinggu easy to make 70 pieces of substrate 3 The gap between the sealing substrate 4 and the sealing substrate 4 is reduced. Thereby, the time required for laser refining is shortened, and there is a difference in thermal expansion coefficient between the element substrate 3 or the sealing substrate 4 and the glass frit 5, and the frit is $ ΪΓ ί is less likely to cause cracks, etc. Here, "average particle diameter 〜" means a value measured by the enthalpy method, and the volume is expressed in a cumulative particle size distribution curve based on a volume-based measurement by a diffraction method. The particle size is 50% from the smaller particle. 15 201216458, The following is the maximum particle size of Γ2 Γ2 粉末 粉末 粉末 粉末 Γ Γ 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 较佳 η

The maximum particle size of Sn 〇 glass powder. The right side will contain the above-mentioned flat (4) condition, and then the __ becomes smaller than the substrate 4, and the seal is cracked. Here, the "maximum particle diameter Γ: = portion is not easily produced by the measured value, and is represented by a particle diameter of 99% in the cumulative particle size distribution curve by the "radiation = diffraction method". It is preferable that the glass containing Sn , is contained as a glass composition and contains 35% to 7 = Sn 〇 and 3% 〇 % of p 2 〇 5 . The reason for limiting the glass composition _ as described above is shown below. In addition, the description of the range of the composition of the glass means that the % means the % of the mole unless otherwise specified.

SnO is a component that lowers the melting point of glass. The content thereof is preferably 35% or more and more preferably 35°/. ~70%, especially good for 40%~70%, best for 5〇〇/〇 ~68%. In particular, as long as the content of SnO is 50% or more, the glass tends to soften and flow when the laser is melted. If the content of SnO is less than 35%, the viscosity of the glass is too high, and it is difficult to perform laser welding in accordance with the desired laser output. On the other hand, when the content of SnO is more than 70%, it tends to be difficult to vitrify. P2〇5 is a glass-forming oxide and is a component for improving the thermal stability of the glass. The content thereof is preferably from 10% to 30%, more preferably from 15% to 27%, particularly preferably from 15% to 25%. If the content of P205 is less than 10%, the thermal stability of the glass is liable to lower. On the other hand, if the content of P2O5 is more than 30%, then glass 201216458 _____rii

The weather resistance of the glass is lowered, so that it is difficult to confirm the long-term reliability of the EL element package 1. In addition to the above components, the following ingredients may be added.

ZnO is an intermediate oxide ' and is a component that stabilizes the glass. The amount thereof is preferably from 0% to 30%', more preferably from 1% to 2%, particularly preferably from 1% to 15%. If the content of ZnO is more than 3% by weight, the thermal stability of the glass is liable to lower. B2〇3, a glass forming oxide' and a component for stabilizing the glass, and a component for improving the weather resistance of the glass. The content is preferably -20% or more preferably 1 〇 / 〇 〜 2 〇〇 / 0 ' particularly preferably 2% to 15%. If the content of b2〇3 is more than 2G%, the miscellaneousness of the glass becomes too high, and it is difficult to perform laser welding in accordance with the desired laser output. ’

Al2〇3 is an intermediate oxide' and is a component that stabilizes the glass. Further, Al2〇3 is a component which lowers the coefficient of thermal expansion of the glass. The content is preferably from 0.1% to 10% by weight, particularly preferably from 0.5% to 5%. If the content of Al2〇3 is more than 10%', the softening point of the glass powder may rise undue, making it difficult to perform laser smelting in accordance with the desired laser output.

Si〇2 is a glass-forming oxide and is a component that stabilizes the glass. The content thereof is preferably from 0% to 15%, particularly preferably from 〇% to 5%. If the content of si〇2 is more than 15%', the softening point of the glass powder may rise improperly, making it difficult to perform laser welding in accordance with the desired laser output.

In2〇3 is a component for improving the thermal stability of the glass, and its content is preferably from 0% to 5%. If the content of WO3 is more than 5%, the batch cost is high.

Ta2〇5 is a component for improving the thermal stability of the glass, and its content is preferably from 0% to 5%. If the content of Ta2〇5 is more than 5%, the softening point of the glass powder 17 201216458 ^ ΙΑ will rise improperly, making it difficult to follow. The desired laser, such as laser dissolution

La2〇3 is a component that improves the thermal stability of the glass, ::. The content is preferably -15%, more lj)/. ‘ #佳为〇%~5%. If the content of La2〇3 is more than 15%, the cost of the batch is increased. Μ0Ο3 is a component which improves the thermal stability of the glass, and its content is preferably 〇% to 5〇/. . If the content of μ〇〇3 is more than 5%, the softening point of the glass powder may rise undue, making it difficult to perform laser fusion in accordance with the desired laser output. WO3 is a component of the heat stability of the south glass, and its content is preferably from 〇% to 5%. If the content of W〇3 is more than 5%, the softening point of the glass powder does not rise, and it is difficult to perform laser blending in accordance with the desired laser output.

LhO is a component which lowers the melting point of glass, and its content is preferably from 〇% to 5%. If the content of LbO is more than 5%', the thermal stability of the glass is liable to lower.

NaaO is a component which lowers the melting point of glass, and its content is preferably from 〇% to 10%, particularly preferably from 0% to 5%. If the content of NazO is more than 1%, the thermal stability of the glass is liable to lower. Κ20 is a component which lowers the melting point of the glass, and its content is preferably from 〇% to 5%. If the content of cerium 20 is more than 5%, the thermal stability of the glass is liable to lower.

MgO is a component which improves the thermal stability of the glass, and its content is preferably from 0% to 15%. If the content of MgO is more than 15%, the softening point of the glass powder may be improperly increased, so that it is difficult to perform laser welding in accordance with the desired laser output. 18 rll 201216458

The content of BaO which is a component for improving the thermal stability of the glass is preferably 〇% 〜. If the content of BaO is more than 1%, the balance of the composition of the glass composition is destroyed, and the glass is easily devitrified. The content of the component which lowers the melting point of the glass is preferably 〇% to 5%. If the content of F2 is more than 5%, the thermal stability of the glass is liable to lower. In consideration of thermal stability and low melting point characteristics, In2〇3, Ta2〇5,

The total amount of La203, Mo03, W03, Li2, Na2, K20, MgO, BaO, and F2 is preferably 10% or less. In addition to the above components, other components (Ca〇, Sr〇, etc.) may be added, for example, up to 10%. Further, the content of the transition metal oxide in the glass powder containing Sn 较佳 is preferably 10% or less, more preferably 5% or less, and particularly preferably substantially zero, from the viewpoint of reduction in the mass cost. Here, "substantially zero" means that the content of the transition metal oxide in the glass composition is 3 〇〇〇 ppm (mass) or less, preferably 1 〇〇〇 ppm (mass) or less. Further, it is preferable that the glass powder containing SnO does not substantially contain PbO from the viewpoint of the environment. Here, "substantially no pb" means that the content of PbO in the glass composition is 1000 ppm by mass or less. On the other hand, the pigment is preferably an inorganic pigment, more preferably selected from the group consisting of carbon,

One or more of Co304, CuO, Cr203, Fe203, Mn〇2, SnO, and TinOw (η is an integer) are particularly preferably carbon. These pigments are excellent in color developability and have good absorbability of laser light. From the viewpoint of the environment, the pigment preferably does not substantially contain a Cr-based oxide. Here, "substantially no Cr-based oxide" means that the content of Cr 19 201216458 ----- lanthanide oxide in the pigment is 1000 ppm (the average particle diameter of the pigment is 〇5. preferably ~ Situation: μπι~1 is called. And 'The maximum particle size of the pigment is two, especially preferably 0.3 1 〇μπι, especially preferably 1 μηι~5. If 乂佳 is 〇.5 μιη~ The pigment is uniformly dispersed in the glass frit. 5 in the middle = who is too big, it is difficult

The glass partially does not soften the flow of the crucible. If the face _3 = connected to the flow of H. Moreover, the pigment-sub-particles are also not softened "~leak (10), more preferably 3nm~100: l^y^gui for 500 nm: especially good for 10 mail ~ (10) Cong. If the pigment is once, then, the pigment It is easy to agglomerate each other, so it is difficult to make the pigment in the glass frit 5, and when the laser sealing is performed, there is a glass j after 3 movements. And 'even one of the pigments: two: the sealing seal =: contains fire resistance The filler is as follows: The mechanical strength of the glass frit 5 is increased. The inorganic powder = 3 mixed with the glass powder of the Sn crucible and the inert filler, preferably 40% ~ face: 〇% ~ 6〇%, especially good 5〇%~9= j〇%~5〇%. If the content of the refractory filler is more than 60% by volume, the proportion of the glass-containing powder will be relatively reduced, so that the efficiency of the lightning hybrid can be used as a refractory filler. Wrong stone (zirc〇n), oxidation error 20

II II201216458 (zircoma), tin oxide, quartz, β_ sapphire (sp〇dumene), cordierite, mullite, quartz glass, beta eucryptite, β-quartz, phosphoric acid Bismuth, zirconium phosphate, zirconium urate,

NbZr (POO 3 or the like having (10) 2 (a basic structure of m〇d, A. Li, Na, K, Mg, Ca, Sr, Ba, Zn, Cu, Ni,

Mn or the like B: Zr, Ti, Sn, Nb, Ab Sc, Y, etc. M: P, Si, W, Mo, etc. or these solid solutions. The maximum particle diameter Dmax of the refractory filler is preferably 3 〇 μηη or less, more preferably 20 μηη or less, and particularly preferably 丨〇 μιη or less. If the maximum particle diameter Dmax of the refractory filler is more than 30 μm, a portion having a thickness of 30 μm or more is generated at the welded portion of the glass frit 5, and therefore, between the component substrate 3 and the sealing substrate 4 in the organic EL component packager. The gap is not uniform, so that the organic device package 1, that is, the organic EL display device, is difficult to be thinned. On the other hand, if the maximum particle diameter Dmax of the refractory filler is limited to 3 〇 or less, the gap between the element substrate 3 and the sealing substrate 4 is reduced. Thereby, the required time is shortened, and even if there is a difference in age expansion coefficient between the substrate 3 or the sealing member, the fusion of the glass complement 5 is less likely to cause cracks or the like. In the glass frit 5, the softening point is preferably 45 Å. 〇The following "excellent power" is below. If the softening point is higher than the substance. The efficiency of j connection is easy to reduce. The lower limit of the softening point is not particularly limited. When considering the thermal stability of the glass of 201216458 -----rll, it is preferred to limit the softening point to 300 Å or more. Here, the "softening point" means that the dry intestine measured by a macroscopic differential thermal analysis (DTA) apparatus is set at room temperature in a nitrogen atmosphere, and the temperature rise rate is set by a macroscopic DTA apparatus. The softening point refers to the temperature (Ts) of the fourth bending point shown in FIG. In the organic EL display device, an active matrix driver in which an active element such as a thin film transistor (TFT) is placed in each pixel and driven is used as a driving method. In this case, an alkali-free glass is used for the glass substrate for an organic EL display (for example, 〇A_1〇G manufactured by Nippon Electric Glass Co., Ltd.). Usually, the alkali-free glass has a coefficient of thermal expansion of 4 〇 x l 〇々 or less, and the glass frit has a coefficient of thermal expansion of 76'-Vc to 83xl 〇.7/t. Therefore, it is difficult to make the coefficient of thermal expansion of the glass frit strictly match the coefficient of thermal expansion of the alkali-free glass. However, the above-mentioned SnO-containing glass powder and the low-expansion refractory filler have a good suitability for (PO4) 3 and strontium phosphate, so that the coefficient of thermal expansion of the glass frit 5 can be remarkably lowered. Therefore, when these refractory fillers are used, it is easy to set the thermal expansion coefficient of the glass frit 5 to 75 x 1 〇 -7 / ° C or less. Here, the thermal expansion coefficient of the glass frit 5 is more preferably 65 x 1 〇 -7 / «> c or less, further preferably 55 x KT 7 / ° C or less, particularly preferably 49 x 10 7 / t: or less. Thus, the stress applied to the welded portion of the glass frit 5 is reduced, so that the stress of the welded portion can be prevented from being broken. Here, "thermal expansion coefficient" means an average value measured by a pusher type thermal expansion coefficient (Thermomechanical Analysis (TMA)) in a temperature range of 30 ° C to 250 ° C. 22 201216458 a il Next, the manufacturing procedure of the organic E-member package constructed as described above will be described. First, the paste-like glass frit 5 is applied to the peripheral edge portion of the sealing substrate 4, for example, at a thickness of 15 μm, and then pre-calcined, and temporarily cured on the sealing substrate 4. On the other hand, on the element substrate 3, the second electrode 6 is formed into a film in a predetermined pattern, for example, at a thickness of 3 nm, and then the organic E]L layer 2 is formed on the organic EL layer 2. The second electrode 7 is formed into a film in a predetermined pattern. Further, in the peripheral portion of the element substrate 3, for example, a Si 〇 2 film (low refractive index layer) having a thickness of 139 nm and an SbN 4 film having a thickness of 100.6 nm (high refractive index) are applied across the electrode 6 and the electrode 7. The layers are alternately formed into a total of nine layers to form a dielectric multilayer film 8. Further, the dielectric multilayer film 8 is alternately laminated by a low refractive index layer and a high refractive index layer by, for example, a chemical vapor deposition (CVD) method, a sputtering method, a vacuum evaporation method, or the like. And formed. Then, the element substrate 3 and the sealing substrate 4 are disposed to face each other, and after the glass frit 5 is brought into contact with the dielectric multilayer film 8, the glass frit 5 is irradiated with light from the side of the sealing substrate 4 to make the glass frit 5 secret. The frit 5 and the dielectric shell multilayer film 8 are attached. Thereby, the element substrate 3 is bonded to the entire periphery of the outer peripheral portion of the sealing substrate 4, and the organic layer 2 is hermetically sealed. Further, when the organic package 1 is formed as described above, the following effects can be achieved. That is, the dielectric layers constituting the dielectric multilayer film 8 can maintain the adhesion to the glass frit 5 more favorably than the metal layer. Therefore, even if 23 201216458, • w * ριι is not only provided to increase the adhesion to the glass frit 5, but a new layer is additionally provided, and the frit %: 8 force can be favorably maintained. Further, since the dielectric properties of the dielectric multilayer film 8 are formed, electrical insulation between the electrode 6 and the electrode 7 of the organic layer 2 can be ensured even without providing an insulating layer. In addition, the condition for improving the adhesion layer with the glassy 5 or the condition of ** = =, thereby ensuring the setting of the organic a-element sealing member and - as long as the dielectric multilayer film 8 as described above, low refraction The respective dielectric layers and film thicknesses of the dielectric layer and the high refractive index dielectric layer are adjusted, and excellent reflectance can be easily realized in the laser band of the laser beam L. Therefore, if the glass is bonded When the material length is 5, the glass frit 5 is irradiated with the laser light from the side of the sealing substrate 4, and the laser photoelectric multilayer film 8 is surely reflected toward the glass frit 5 to be heated by the glass frit 5. Therefore, the dielectric multilayer is transmitted. The film 8 is in the same way as the laser light of =7 is reduced as much as possible, so that it is possible to confirm that the electrode 6, the electrode 7, or the organic layer 2 is not thermally heated due to the laser light. In addition, the first invention is not limited to the above embodiment, and the shape 4 can be realized. For example, in the above-described embodiment, the dielectric layer 8 is directly formed on the electrode 6 and the electrode 7. The j can be inserted into the insulating layer. Further, similarly, the dielectric is applied. The multilayer film is directly melted in the case of the glass 5, but it can also be inserted between the layer of the multilayered layer 8 and the glass frit. 24 201216458. ----χ-ΊΓ 1% of the shape The transparent electrode or the metal electrode including A1 as the 7th non-electrode 6 or the second thunder H may be other transparent electrodes such as IZO or AZO or Ti, Ag, Cu~Mo. Other metal electrodes, etc., and 'the above-mentioned silk II towel, with the money EL element ^ display device) for the ship, but also, the device in the Ϊ Γ 或 or other components of the solar scale In addition to the glass frit, the glass frit may contain various glass frit or a glass frit containing V2. 5, including Bi203-end, and cordierite-cut zinc ore (edge). The glass frit. The current i-time ^ ginseng _ type - face the second invention - the implementation of the package into the electrical components as an example In the following, the organic red enamel is a schematic structure of the shovel of the shovel of the shovel, and the squirrel of the squirrel is as follows: The sealing substrate facing the surface on the side of the iris layer 2 is sealed around the organic EL layer 2 and the frit 5 is hermetically sealed between the element substrate 3 and the gap between the sealing substrates 4. The oos is in the air. In the embodiment, the substrate 3 and the sealing substrate 4 include, for example, a glass substrate. In addition, in the sealing substrate 4, in order to contact ', 2 or to provide a moisture absorbing material: 25 201216458 -----^ At 1 形成, an etched portion having a certain thickness is formed. The plate 3 is provided with a lower jaw 6 and a second electrode 7 which are connected to the front and back sides of the organic a layer 2. The electrode 6 and the electrode 7 are guided to the outside of the organic component package 1 by the glass guide layer 2, and electric power is supplied to the organic EL layer 2. Further, the electrode 6 and the electrode 7 are branched as shown in Fig. 4 in accordance with a predetermined pattern. Further, the first electrode 6 on the surface side is formed of, for example, a transparent electrode: a second electrode film on the surface side. Further, both the first electrode 6 and the second electrode 7 may be formed of a transparent electrode film. ^ 1 } ^ As shown in Fig. 3 and Fig. 4, 'the laser light emitted from the laser beam == is incident on the glass frit 5', and the glass frit 5 is heated to melt the substrate 3 and the sealing substrate 4, thereby forming There is a hermetic seal construction of the f cattle package 1. Further, as the laser L, for example, a near-infrared semiconductor laser (wavelength_cafe-blue nm) is used. Here, when the laser is fused to the frit 5, if the electrode 6 and the electrode 7 are received, there is a possibility of causing thermal damage to the electrode 6 and the electrode 7. In addition, in the present embodiment, the electrode 6 and the electrode 7 are thermally damaged. Therefore, in the present embodiment, the electrode 6 and the electrode 7 are inserted as a protective film. The function - the oxide film 9' is protected from the laser light by the tilt electrode 6 and the electrode 7. The metal oxide film 9 functioning as the protective layer is preferably bonded to the glass material 5, the electrode 6, and the electrode 7. Excellent, and shows an insulating film. Close thief pure f, solution SiG2, ZrQ2, Y2〇3, Ti〇2, ai2〇3, 26 201216458

Ta205, and Nb205 〇 The film thickness of the metal oxide film 9 is preferably 5 nm to 5 Å, more preferably 10 nm to 300 nm, and particularly preferably 30 nm to 3 〇〇 nm. When the thickness of the metal oxide film 9 is less than 5 nm, the effect of protecting the electrode 6 and the electrode 7 is reduced. On the other hand, if it is larger than 500 nm, the amount of stress caused by the difference in thermal expansion between the glass frit 5 and the metal oxide film 9 is increased, and peeling easily occurs between the glass frit 5 and the metal oxide film 9 after laser welding. Moreover, it is one of the causes of the high manufacturing cost of the electrical component package. As the glass frit 5', it is preferable to contain: 8 〇 wt% 〜 99 95% by weight of an inorganic powder containing a glass powder containing SnO, and a pigment of 5% by weight. Here, the content of the inorganic powder is preferably from 9 〇 wt% to 99 95 ° wt%, more preferably from 95 wt% to 99.95 wt. /. , especially good for 99 wt% ~ 99 still wt%. If the content of the money powder is small, the softening flow of the material is less than that of the Rayon, and it is difficult to increase the impurity strength. On the other hand, when the content of the inorganic powder is more than 99.95 Wt%, the content of the pigment is relatively decreased by ’, and the absorption performance of the laser light of the glass frit 5 is lowered. Moreover, if the content of the pigment is limited to 0.05% by weight or more, it is easy to absorb the laser light, so the efficiency of the lightning connection is improved, and the scratching of the pole or the electric component is easy if the content of the blue is 'thin.' The preferred aspect of preventing the glass frit from devitrifying the SnO-containing glass powder, the average particle size #D5q, the maximum particle diameter d, and the glass composition, is the same as above, and is: Detailed description. ^便钱(四)略其27 201216458 pit The softening point of the glass powder containing SnO is preferably that the pigment on the enamel is preferably an inorganic pigment, more preferably selected from the group consisting of ^c〇3〇4, ^〇, =2〇3, Fe2 〇3, Mn〇2, Sn〇, Tin 〇 2n “(n is an integer)) is more preferably one type of carbon, and carbon is preferably carbon, preferably amorphous carbon, eve, and b. Excellent in average, and the average particle diameter D5 of the absorptive diterpene pigment of the laser light. The average particle size of the primary particles of the pigment; ΪΪί is the same as above. Moreover, from the viewpoint of the environment, the swaying car is good. The material does not contain a Cr-based oxide. The glass material tL5 is further preferably a fire-cut filler. Thus, the thermal expansion coefficient of the glass crucible H can be lowered, and the mechanical strength of the material 5 can be improved to contain Sn in the inorganic powder. The mixing ratio of the glass powder to the smoldering material is adjusted to be the same as above. The preferred range of the same fire-resistant material f, the maximum building Dmax and the thermal expansion coefficient of the glass frit 5 are as described above. The same is true. The frit 5 is preferably kneaded with a vehicle and processed into a paste = used. Further, the coating agent usually contains a resin binder and a solvent. Further, the dendrimer mixture and the solvent are preferably the same as described above, and the detailed description thereof is omitted for convenience. In the case of (debinder), it is preferable to carry out the 'excellent operation in an environment under the inert ring brother. Thus, it is easy to prevent the occurrence of a situation in which the powder containing SnO in the case of fat is changed to f. In the case of the connection, it is preferable to carry out the reaction in an inert environment, and it is particularly preferable to carry out the situation in which the glass powder containing SnO is modified in the case of the laser melting 28 201216458. Next, the manufacturing procedure of the organic EL element package 1 will be described. First, the paste-like glass frit 5 is formed on the sealing substrate 4 along the peripheral edge portion by a thickness of about 40 μm, for example, by a screen printing machine. After the width coating of 6111111, drying and calcination are carried out, whereby the resin component and the solvent component in the paste are decomposed and volatilized, and the glass frit is softened and flowed, thereby being firmly fixed to the sealing substrate 4. The calcined glass frit 5 height of For example, it is about 15 μm. In order to improve the precision of laser welding, it is necessary to smooth the surface of the calcined glass frit. Specifically, it is preferable to make the surface roughness of Ra value: 〇7 or less, and the fineness of the raw material is fine. Root Mean Square roughness (RMS) value: 1 μηι or less. On the other hand, on the element substrate 3, for example, the first electrode 6 is formed into a film in a predetermined pattern at a thickness of 150 nm, and then the glass frit 5 is printed. The region in which the peripheral portion of the shot is opposed is formed, for example, by a thickness of i 〇〇 nm, and the Si 〇 2 film 9 is formed by, for example, a CVD method, a sputtering method, a vacuum deposition method, or the like. And formed. Thereafter, the organic EL layer 2 is formed into a film, and the second electrode 7 is formed into a film on the organic EL layer 2 in a predetermined pattern. Then, the element substrate 3 and the sealing substrate 4 are disposed to face each other, and after the glass frit 5 is brought into contact with the Si 〇 2 film 9, the glass frit 5 is irradiated with the laser light from the side of the sealing substrate 4, and the glass frit 5 is melted and softened and flowed. Thereby, the glass material 5 and the Si〇2 film 9 are directly welded. Thereby, the element substrate 3 and the sealing substrate 4 are joined along the outer periphery, and the organic EL layer 2 is hermetically sealed. Further, the first invention is not limited to the above embodiment, and can be implemented in various forms. For example, in the above embodiment, the case where the Si 〇 2 film 9 29 201216458 is sealed on the first electrode 6 has been described, but it may be protected on the glass frit 5 on the side of the sealing substrate 4. Other penetrations formed in 岔"二^咖, AZ〇, FT0, and Zn〇 = 7 ==:=== electrodes. The device is illustrated as an example, and the package is packaged (organic EL illumination device 戍 solar cell 箅The pots are equally applicable to the electrical materials used in other components of the organic parts packaging. The glass frit can also be used in addition to the various types of glazing. For example, the glass frit containing: and Me-stone can also be used. Including a glass of smectite or a sapphire spur glass frit containing 5. A fine 3 _ powder and indigo [Example 1] - The hair is described in detail in the first invention. In addition, the second </two any mosquitoes. The actual value of the film composition of the dielectric multilayer film used in the electrical component package of the real month of the simulation of the frequency characteristic of the reflectivity is shown in the design example of the film structure of the example (Νο. 2 to Ν 0.4). In Table i. Membrane. 'In Table 1' as a comparative example (N〇1) to represent a single layer of dielectric 30 201216458 _____^11 [Table i]

No.1 No.2 No.3 No.4 No.5 No.1 (film thickness (nm)) Si3N4 (100.6) Si3N4 (100.6) Si3N4 (100.6) Si3N4 (100.6) S13N4 (100.6) Layer 2 (film Thick (nm)) - Si02 (139.0) Si02 (139.0) Si02 (139.0) Si02 (139.0) Layer 3 (Thickness (nm)) - Si3N4 (100.6) Si3N4 (100.6) Si3N4 (100.6) S13N4 (100.6) 4 layers (film thickness (nm)) - - Si02 (139.0) Si02 (139.0) Si02 (139.0) Layer 5 (thickness (nm)) - - Si3N4 (100.6) S13N4 (100.6) S13N4 (100.6) Layer 6 (Thickness (nm)) - - - Si02 (139.0) Si02 (139.0) Layer 7 (film thickness (nm)) - - - S13N4 (100.6) S13N4 (100.6) Layer 8 (film thickness (nm)) - - - - Si02 (139.0) Layer 9 (film thickness (rnn)) - - - - S13N4 (100.6) Total film thickness (nm) 100.6 340.1 579.7 819.2 1058.8 Although the dielectric layer of the film shown in Table 1 is composed The film was simulated, but showed the wavelength characteristics of the reflectance shown in Fig. 5. As shown in FIG. 5, as compared with the example of the three-layer structure (No. 2), the wavelength characteristic of the reflectance becomes good as the number of layers increases, and in the example of the nine-layer structure (No. 5), the maximum reflectance is reached. About 90% so far. Moreover, in the design of these examples (Νο·2~Νο·5), the reflectance of the infrared laser light having a wavelength of 808 nm is the largest. [Example 2] <Measured value of frequency characteristic of reflectance> An example of a film configuration of an example of a dielectric multilayer film (Νο·6 to No. 8) used in the electrical component package of the first invention is shown. In Table 2. 31 201216458 .

[Table 2] First layer (film thickness (nm)) No. 6 Si3N4 (100.6) No. 7 Si3N4 (100.6) No. 8 Si3N4 (100.6) Layer _2 (film thickness (nm)) Si〇2 ( 139.0) Si02 (139.0) Si02 (139.0) Layer 3 (Thickness (nm)) - Si3N4 (100.6) Si3N4 (100.6) Layer 4 (Thickness (nm)) - Si02 (139.0) Si〇2 (139.0) Layer 5 (film thickness (nm)) Si3N4 (100.6) Si3N4 (100.6) Layer 6 (film thickness (urn)) Si02 (139.0) Si〇2 (139.0) Layer 7 (film thickness (nm)) - Si3N4 (100.6) Layer 8 _ (film thickness (nm)) __ $ film thickness __(nm)__ Si〇2 (139.0) 239.6 718.8 958.4 The frequency of reflectance of this example (No. 6~Νο·8) The characteristics are shown in Figure 6. The example consisting of 6 layers (Νο·7) and the example containing 8 layers (Νο·8) have the highest reflectance around the wavelength of 808 nm, and the instance containing 8 layers (Νο·8) has achieved about 70%. Maximum reflectivity. [Example 3] <Measurement of temperature of electrode at the time of laser refining> ^Printing a paste-like glass at a peripheral edge portion of a glass substrate of 40 mm x 40 mm x 0.5 mm thick by screen printing at a thickness of 15 μm After the preparation, pre-baking was performed at 500 C for 1 hour to temporarily cure the glass frit, thereby producing a sealed substrate. Here, as the glass frit, a compound containing 99 wt% of an inorganic powder and i wt% of a pigment was used. The inorganic powder contained in the glass towel contains 6 〇 32

201216458 TV X A vol% (4%) glass powder and 4% by volume of refractory filler. The Sn〇 bismuth glass powder contained 59% of SnQ, 5% of ZnO, 15% of B2〇3, and 1% of Al2〇3 as a glass composition. Further, in the glass powder, the average particle diameter D4 25 is called, and the maximum particle diameter Dmax is 7 μη. The refractory filler comprises zirconium phosphate powder having an average particle size of 2 qing and the largest granule (4) coffee is 8 qing. On the other hand, the pigment contained in the glass frit contains carbon powder and has an average particle diameter D5. For G 5 哗, the maximum particle size Dmax is 3 μηι. On the other hand, on a glass substrate having a length of 4 mm x 5 x mm x 〇 5 mm, a first electrode including 1 T 成 was formed into a film having a thickness of 15 〇 nm, and after patterning, the glass was borrowed. The organic EL layer and the second electrode including ... were each formed by a vacuum test to form an element substrate. Then, in a state where the element substrate and the sealing substrate are disposed to face each other in a nitrogen atmosphere, laser light having a wavelength of 8 〇 8 nm is irradiated from the side of the sealing substrate to melt the glass frit, thereby performing hermetic sealing. Further, laser light having an output of 2 〇 w was irradiated with laser light while moving along the periphery of the glass substrate at 5 mm/s. Further, the temperature of the second electrode and the second electrode at the time of the laser welding was measured by a radiation thermometer. First, the temperature measurement at the time of the laser welding of the second electrode including the IT crucible was performed. Specifically, the temperature was measured as follows: (1) As a comparative example, a dielectric multilayer film (No. 9) was not disposed on the first electrode, and (2) was disposed as an example on the first electrode. Example (N〇6) A two-layer dielectric multilayer film of the same composition (N〇1〇), and (3) a configuration of the same as the above-described example (No. 8) on the 33 201216458 if 1 electrode 8-layer dielectric multilayer film (No. 11). The results are shown in Fig. 7. 7 that the temperature of the first electrode (ITO) of the comparative example (N〇 9) in which the dielectric multilayer film was not disposed exceeded 4 〇〇. In contrast, the temperature of the second electrode of the example (No. 1G to No. U) in which the dielectric multilayer film was disposed was lower than 400 °C. In particular, in the example (No. 11) in which the dielectric multilayer film of eight layers was used, since the temperature of the second electrode was lowered to about 22 (rc), it was found that the effect of preventing thermal damage of the first electrode was sufficient. Further, next, the temperature at the time of laser welding of the second electrode including A1 is measured. Specifically, the temperature is measured as follows: (1) As a comparative example, a dielectric multilayer film is not disposed on the second electrode ( No. 12), (2) As an example, a two-layer dielectric multilayer film (no. 13) having the same structure as the above example (n〇6) was placed on the second electrode, and (3) was in the second A six-layer dielectric multilayer film (No. l4) having the same configuration as that of the above example (N〇7) is disposed on the electrode, and (4) the same configuration as that of the above example (n〇.8) is disposed on the second electrode. The 8-layer dielectric multilayer film (No. 15) is shown in Fig. 8. According to Fig. 8, the second electrode (A1) of the comparative example (?^0.12) in which the dielectric multilayer film is not disposed is known. The temperature of the second electrode of the example (No. 13 to No. 15) in which the dielectric multilayer film is disposed is lower than 700 ° C. In the example (No. 14) using a 6-layer dielectric multilayer film or the example (n0.15) using an 8-layer dielectric multilayer ruthenium, the temperature of the second electrode is lowered to about i5 〇〇. From now on, it can be seen that in the case of 34.if 201216458, the second electric (four)_injury [Example 4] Knife &lt;There is no electrode heat during laser welding> When performing laser refining, the periphery of the private substrate The laser light with a distance of 3 mm/s—edge H is 12 W, melts along the glass, and has no electricity _=^ edge=pure, so that the glass nano material is set to ΙΤ0, and the wound is inspected. In other words, (1) is (N〇.16), and the dielectric is not provided with a dielectric multilayer film of 8 layers and the same composition of the above example (N.·8) is damaged; === There is no such thing as "there is no conduction state / /, there is." This is because if the electrode is subjected to a finger injury, the line will be the end of the money line. The tie P, ,,, (4)

[Table 3], T p — tn with or without thermal damage ΝΪΓΐή~~- czmni —No.17 No. 18 ----- Line; ^ and :: 5 hai check 'The temperature of the frit during laser welding Order check. The results are shown in Fig. 9. As shown in Fig. 9, compared with the case where the dielectric multilayer film is not provided on the electrode 35 20121645 &amp; Example (No.16), an example of a dielectric multilayer film is provided on the electrode (No. 17 n〇. The temperature of the 1 $ ) frit is even higher. Therefore, in the examples (17 to No. 18), it is understood that reading laser light by reflecting the laser light toward the frit side by the dielectric multilayer film is effectively used for heating the frit. [Example 5] (The following is a detailed description of the second invention according to the example. In addition, the following examples are merely illustrative. The second invention is not limited by the following examples. Table 4 shows an example of the second invention (sample) No.l~No.4) and comparative example (sample ISJq.5) [Table 4] _ Example Comparative Example No.1 Νο.2 Νο.3 No.4 Νο.5 Protection f - film thickness (1 i ' ' lm)) Si〇2 50 Si02 100 Si02 300 Si02 1000 No laser light irradiation condition A Output .22 W Speed 125 mm/s Beam diameter: φ〇.8 mm Average glass frit ΓΟ 730 750 740 750 740 Resistance value ( Ω-cm) 80 80 80 80 80 before irradiation 90 80 80 80 after irradiation 80 Rays of non-conducting laser light B output: 15 W Speed: I〇mni/s Beam diameter: ¢0.8 mm Test ο ο ο X ο Average temperature resistance value (Ω-cm) 4 (°〇640 630 640 630 640 80 80 80 80 80 before irradiation 80 80 80 80 80 120 «AST test 〇0 0 X 0 Laser light irradiation condition c Output: 12W speed : 3 mm / s beam diameter · cp 0.8 mm glass frit average temperature γ, 680 690 685 680 690 resistance value (Ω-cm) 80 80 80 before irradiation 80 80 After irradiation 85 85 80 80 Not conducting hast test ο ο 0 X ο First, the frit and the vehicle are in a viscosity of about 150 Pa · S (25 ° C, Shear rate: 4) After the kneading, the mixture was kneaded by a three-roll mill until it became uniform, and was pasted. 36 201216458 _^11 The glass frit was a compound containing 99.75 wt% of an inorganic powder and a pigment of 〇25. The inorganic powder contained in the glass frit contains 6% by volume of SnO-based glass powder and 40% by volume of refractory filler, and the glass powder contains Sn 〇, 2 以 which is 59% by mol%. % P2〇5, 5〇/. Zn0, 15% b2〇3, and 1% Al2〇3 compound are used as the glass composition. Moreover, the average particle diameter Dm of the glass powder is 2 μηι′ maximum particle diameter. The Dmax is 5 μηη. The refractory filler contains barium phosphate powder, and its average particle diameter D50 is 1.5哗, and the maximum particle size is ^哗. The pigment contained in the glass frit contains the carbon powder and the average of the primary particles. A compound having a particle size Dm of about 30 nm. As the resin component of the vehicle, polyethylene carbonate resin (MW: 129000) was used, and as a solvent component, propylene carbonate (pr〇pylene carb〇nate) was used. Further, the softening point of the glass frit is 400 〇C, and the thermal expansion coefficient of the glass frit is 49x10·^ (measurement temperature range 3〇χ: 〜3〇〇〇c). Here, the softening point is a value measured by the DTA apparatus, and the coefficient of thermal expansion is a value measured by the TMA apparatus. Next, the paste-like glass frit adjusted as described above was screen-printed by the peripheral portion of the glass substrate (OA-10G, manufactured by Sakamoto Electric Glass Co., Ltd.) having a length of 40 mm × a width of 50 mm and a thickness of 0.5 mm. After printing with a thickness of about 30 μm and a width of about 6 mm, it was dried in an atmosphere of 120 C for 30 minutes, and under a nitrogen atmosphere, 48 Torr. The crucible was calcined under the conditions of 10 minutes. After the resin component in the paste was decomposed and volatilized, the glass frit was fixed to the glass substrate to prepare a sealing substrate. The calcined frit has a thickness of about 16 μm. After the surface roughness of the calcined glass frit 37 201216458, the Ra value was 0.5 μηη' RMS value of 0.8 μηη. On the other hand, a glass substrate (OA-10G, manufactured by Sakamoto Electric Glass Co., Ltd.) having a thickness of 50 mm x 50 mm x 0.5 mm thick was formed by patterning and patterning the ith electrode containing ITO at a thickness of 150 nm. The SiO 2 film is formed into a film at a thickness of 50 nm, 100 nm, 300 nm, or 1000 nm in a range in which the frit is fixed. The Si〇2 film was formed into a film with a width of about 1 mm in such a manner that the glass frit was not in contact with the IT film. Further, regarding the sample Νο·5, no oxide film was formed. Then, an organic EL layer and a second electrode including the crucible 1 were formed on the glass substrate by a vacuum deposition method to form an element substrate. Then, in a state where the sealing substrate and the element substrate are opposed to each other in a nitrogen atmosphere, laser light having a wavelength of 808 nm is irradiated along the glass material from the side of the sealing substrate, and the sealing substrate is welded to the element substrate. In addition, the irradiation conditions of the laser light are as described in the table. The following evaluations were performed on samples No. 1 to No. 5. The temperature of the frit at the time of irradiation with the laser light was measured using a radiation thermometer. Before and after the irradiation of the laser light, the resistance of the ιτ film immediately below the glass frit was measured, and the ITO film was evaluated for thermal deterioration. High temperature, high humidity and high pressure testing of the glass frit after laser welding: HAST test (Highly Accelerated Temperature and Humidity

After the Stress Test, the glass frit was observed for peeling, and the non-stripped glass frit was evaluated as "〇". The peeled glass frit was evaluated as "x". In addition, the conditions of the HAST test were set to 121 ° C, 100% RH, 2 atm, and 24 hours. 38 201216458 Dezhi, sample N. ·1,·4 is accompanied by 11T before the irradiation of laser light. : There is no major change in the t value. This fact indicates that the si〇2 film is indeed

It is possible to prevent the 1το film from being caused by the irradiation of laser light. In particular, the sample Νο1~Νο·3 is abnormal in HAS. This fact indicates that the glass and the secretory membrane are strong. On the other hand, in the sample No. 5, since the Si% film was not formed, the resistance value of the ITO film in the first shot was increased. In particular, the laser light is in the form of a schematic configuration of the package according to the first embodiment of the first invention. π牛封 Figure 2 is a cross-sectional view of the A-Α of Figure 1. Fig. 3 is a longitudinal sectional view showing a schematic configuration of an assembly according to an embodiment of the second invention. Machine EL το件封 Figure 4 is a cross-sectional view taken along line A-A of Figure 3. Proposed knot. = Simulation of the _ characteristic of the reflectance in the dielectric multilayer film shows a real graph of the frequency characteristics of the reflectance in the layer film. Fig. 7 is a graph showing the actual measurement results of the temperature of the electrode during the laser welding. Fig. 8 is a graph showing the actual measurement results of the temperature of the electrode during the lightning connection. Fig. 9 is a graph showing the actual measurement results of the temperature of the frit at the time of laser welding. Fig. 10 is a schematic view showing the softening point of glass powder (glass powder containing SnO) or glass frit measured by a macroscopic DTA apparatus. [Explanation of main component symbols] 1 : Organic EL device package 2 : Organic EL layer 3 : Device substrate 4 : Seal substrate 5 . Glass frit 6 : First electrode 7 : Second electrode 8 : Dielectric multilayer film 9 : Metal oxidation Film (Si02 film) L: laser

Ts : temperature of the fourth bending point

Claims (1)

201216458 .ΙΑ VII. Patent application scope: - Last name 1 ★ A kind of electronic component package, including: component substrate, which is equipped with an electric two-blocking substrate, and the above-mentioned electrical element diagram of the component substrate with an interval: ϊί面面向And the glass frit 'in the periphery of the electric component: a gap between the element substrate and the sealing substrate is airtightly sealed," wherein the electric component package includes a protective film, and the protective film is disposed on the The electrode is protected between the plate and the glass frit and used to self-weld the frit.电子杜2. The electronic component package 'includes: an element substrate, which is electrically disposed, is to be sealed, and is opposed to the surface of the element substrate 2 with a gap therebetween; and a glass complement to surround the above-mentioned electric component Circumferentially sealing the gap between the element substrate and the sealing substrate, wherein the electrical component package includes a reflective film disposed between the upper substrate and the glass frit and fused to the above The laser light reflected by the glass; the reflective film includes a dielectric multilayer film in which a low refractive index dielectric layer and a high refractive layer are alternately laminated. 3. The electrical component package described in claim 2, 1; the I electrical multilayer film is directly welded to the glass frit. The electrical component package as described in claim 2 or 3 is formed directly on the 201216458 electrode connected to the above electrical component. 5. The second gas component package of claim 2, wherein the low refractive index dielectric of any one of the above items is the refractive index of the refractive index dielectric layer being L6 or less, the high gas J II specializes in the second item: the electricity mentioned in the above-mentioned item 5. The above-mentioned "multilayer film for the reflection of the above-mentioned f-light (4) 50% by gas: Item 2 to Item 6 of the above-mentioned glass frit contains: machine powder 8; ° Γ / β ~ 99 7 wt% A pigment containing 0.3 wt% to 2 〇 wt 〇 / 〇 of the glass powder containing Sn 。 is included. The electrical component package described in claim 7 of the patent, wherein 70. The glass powder of S/〇 contains 35% to 70/% by mole. , S—η. , and "G% ~ the current p2 〇 5 as a glass composition. The component '·· 斋 , , , 斋 斋 斋 斋 斋 斋 斋 斋 斋 斋 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件 元件Circumferential seal, (4) gap airtight gift of the substrate and the upper seal substrate. The electric nipple package includes a metal oxide film, which is between the above-mentioned element substrate and the above glass frit, and The protective electrode for laser light irradiated by self-welding 42 x-ii 201216458. The electrical component package according to claim 9, wherein the metal oxide film has a thickness of 1 〇 nm to 5 〇〇 nm. Encapsulating the electrical components (10) 2, adding 2, (10), TiG2, Μ, and electrical L2 according to Item 9 or Item 1G of the Scope of Application, as described in Item 9 to Item 11 The above metal oxide film is directly welded to the above glass frit. Electrode 2; please = the electrode of the range of items 9 to 12, the metal oxide _ direct axial surface of the above-mentioned Qianlin connection 14. As claimed in the scope of the ninth to the thirteenth electrical component package, The above glass frit according to any one of the preceding claims, comprising: the powder 8 end. : ~99.95 A ^ 0.05 wt 〇 / 〇 ~ 20 wt% of the pigment. The electrical component package according to claim 14, wherein the SnO-containing glass powder contains 70% of SnO, and 10% to 30% of p2〇5 as a breaking amount of 35% to 43%.