201207928 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種如請求項丨前言所述之粗化平面半 導體基板之方法及一種實施該方法之裝置。 【先前技術】 目前，平面半導體基板（如矽晶圓）係藉由將基板完全 浸入粗化溶液（texturization s〇iution)中而進行工業規模的 粗化步驟，舉例如WO 2004/100244 A1所述。如此一來，平 面基板的兩側會被侵蝕且被大致粗化至相同程度。據此， 有時會將此類粗化步驟稱為對稱性粗化。 近來，對於將平面基板兩側進行明顯不同程度粗化之 粗化方法已倍感興趣，尤其是生產矽太陽能電池。此類粗 化步驟有時又稱為單側或不對稱粗化1此類不對稱粗化興 起之原因有好幾個。舉例說明，最新的太陽能電池需使用 經單側研磨之晶圓，若晶圓待研磨之該側無需或僅進行稍 微粗化的步驟，則其可更容易且更有效率地被製得。由於 使用的晶圓越來越薄，故其有利於粗化期間減少晶圓之咬 蝕量。此外，其亦可減少化學品之消耗量，且可提高粗化 溶液的壽命。 不對稱或單側粗化之已知方法有，於基板中切出V型 凹槽（舉例如 G. Willeke，H. Nussbaumer 等於 Solar Energy201207928 VI. Description of the Invention: [Technical Field] The present invention relates to a method of roughening a planar semiconductor substrate as described in the preamble of the claims and a device for carrying out the method. [Prior Art] At present, a planar semiconductor substrate (e.g., a germanium wafer) is subjected to an industrial scale roughening step by completely immersing the substrate in a texturization solution, as described in, for example, WO 2004/100244 A1. . As a result, both sides of the flat substrate are eroded and roughly roughened to the same extent. Accordingly, such a roughening step is sometimes referred to as symmetry coarsening. Recently, there has been a great interest in roughening methods for significantly differentiating the sides of a planar substrate, particularly in the production of tantalum solar cells. Such roughening steps are sometimes referred to as unilateral or asymmetrical roughening. 1 There are several reasons for the rise of such asymmetric roughening. For example, the latest solar cells require wafers that are unilaterally ground, which can be made easier and more efficiently if the side of the wafer to be ground does not require or is only slightly roughened. Since the wafer used is getting thinner, it is advantageous for reducing the amount of chipping during wafer roughening. In addition, it also reduces the consumption of chemicals and increases the life of the roughening solution. A known method of asymmetry or one-sided roughening is to cut a V-shaped groove in the substrate (for example, G. Willeke, H. Nussbaumer is equal to Solar Energy).
Materials and Solar Cells 26 (1992)，pp.345-350 中所述），或 電毁粗化法（舉例如 Hendrick F. W. Dekkers 於 Study and 4 201207928Materials and Solar Cells 26 (1992), described in pp. 345-350), or electro-destructive roughening (eg Hendrick F. W. Dekkers in Study and 4 201207928
Optimization of dry process technologies for thin crystalline silicon solar cell manufacturing, dissertation Catholic University Leuven 2008中所述）。然而，該些方法既複雜又 昂貴。此外，電漿粗化係為批次製程，其需進行額外的處 置步驟及昂貴的處置裝置。再者，該額外的處置步驟可能 會導致半導體基板損害率增加。基於此原因，該些方法不 適用於工業規模。 WO 2005/093788 A1揭露一種基板表面處理之方法，其 係將矽晶圓之底側降至一溶液中，並將其水平運過該溶 液，而該矽晶圓之頂側則不被該溶液所覆蓋。為了製備不 對稱粗化基板，可考慮將該溶液置換為粗化溶液。然而， 其結果是，於此過程中，該基板（或晶圓，尤其是原切割晶 圓（as-cut-wafer))會變形而弯曲。’變曲現象會增加後續製程 步驟（如清洗或處置步驟）中基板損害的機率。此外，基板或 晶圓之彎曲現象會導致有些製程步驟（舉例如清洗步驟）無 法進行均勻處理之不理想狀況。 【發明内容】 有鑑於上述背景，本發明係基於該問題而提供一種平 面半導體基板不對稱粗化之低複雜性製程，其至少可避免 半導體基板彎曲。 具有請求項1或請求項14所述特徵之製程方法可解決 該問題。 此外，本發明係基於該問題而提供一種可實施本發明 製程之裝置。Optimization of dry process technologies for thin crystalline silicon solar cell manufacturing, dissertation Catholic University Leuven 2008). However, these methods are both complicated and expensive. In addition, the plasma roughening is a batch process that requires additional handling steps and expensive disposal equipment. Furthermore, this additional handling step may result in an increase in the damage rate of the semiconductor substrate. For this reason, these methods are not suitable for industrial scale. WO 2005/093788 A1 discloses a method for surface treatment of a substrate by lowering the bottom side of the germanium wafer into a solution and transporting it horizontally through the solution, while the top side of the germanium wafer is not subjected to the solution. Covered. In order to prepare the asymmetrically roughened substrate, it is considered to replace the solution with a roughening solution. However, as a result, the substrate (or wafer, especially the as-cut-wafer) is deformed and bent during this process. The phenomenon of distortion can increase the probability of damage to the substrate in subsequent processing steps such as cleaning or disposal steps. In addition, the bending of the substrate or wafer can cause undesirable conditions in which some process steps (such as cleaning steps) cannot be performed uniformly. SUMMARY OF THE INVENTION In view of the above background, the present invention provides a low complexity process for asymmetric roughening of a planar semiconductor substrate based on the problem, which at least avoids bending of the semiconductor substrate. A process method having the features described in claim 1 or claim 14 solves the problem. Furthermore, the present invention is based on this problem to provide an apparatus in which the process of the present invention can be implemented.
S 201207928 具有請求項27或請求項32所述特徵之裝置可解決該問 題。 於每一實例中，附屬項係有關於較佳態樣 本發明製程之概念是將半導體基板排列成待粗化之底 側朝下，使其於粗化期間由下方與粗化溶液接觸，並提供 姓刻溶液至半導體基板之頂側，使半導體材料於钱刻期間 自半導體基板之頂側被咬蚀。選擇钮刻溶液及姓刻時間， 使半導體基板頂側被咬蝕之半導體材料量少於半導體基板 底側。 為達本發明之目的，半導體基板（簡稱為基板）之底側 及頂側係指平面半導體基板中面積最大之側面。朝下之半 導體基板底側會被粗化。於太陽能電池基板（如矽晶圓）中， 其底側通常是對應於太陽能電池之前側。 基板底側與粗化溶液接觸時，即開始進行粗化步驟， 而不再接觸時（舉例如，於水中清洗基板時，將粗化溶液由 基板底側移除時）則結束粗化步驟。當基板頂側與蝕刻溶液 接觸時，即開始進行蝕刻步驟，而不再接觸時(.舉例如，將 蝕刻溶液由基板頂側移除時）則結束蝕刻步驟。 本發明之製程係一種濕式化學製程，相較於電漿製程 或切割製程，其較不複雜。此外，其容易整合於與廣泛使 用之工業流線生產方式。已用於基板對稱粗化製程之習知 粗化溶液亦可用於本發明之製程卜據此，⑽半導體基 板頂側咬ϋ之材料4少於底冑，但咬㈣财導體材料可 6 201207928 避免半導體基板之彎曲現象。因此，本發明製程可對半導 體基板進行不對稱粗化，且不會發生彎曲現象。 本發明發現出人意外之現象，相較於粗化溶液自底側 咬蝕之材料量，僅需自基板頂側咬蝕少量的半導體材料即 可避免（或至少可大幅降低）粗化基板的彎曲現象。於本發明 之較佳具體實施例中，半導體基板頂側咬姓之半導體材料 少於半導體基板底側咬|虫之半導體材料量的5〇%，較佳是 少於20% » 實際上，已證實較佳是自半導體基板頂側咬蝕厚度少 於10 μιη之薄層，較佳是少於3 μιη，特佳是少於1 μπι。 於本發明較佳之製程具體實施例中，該半導體基板係 設置於粗化溶液的表面，且粗化溶液與半導體基板頂側不 接觸。WO 2005/093788 Α1揭示如何據以實施。基板不一定 要在整個粗化期間都依其所述之方式而置於粗化溶液的表 面。 於本發明之具體實施例中，頂側是於部分之姓刻期間 内暫時設置於粗化溶液表面之下方，俾使蝕刻溶液提供至 半導體基板之頂側。為達本發明之目的，若將基板置於粗 化溶液中’使粗化溶液完全潤濕頂側，則頂側係位於該表 面之下方《其實施方式舉例有，將基板完全浸入粗化溶液 中。於此具體實施例中，該粗化溶液是同時作為蝕刻溶液。 於本發明製程之另一具體實施例中，該蝕刻溶液是噴 /麗至半導體基板的頂側上。據此，不同於粗化溶液之姓刻 溶液可順利地置於半導體基板之頂側。該蝕刻溶液因此易 201207928 於配合所需之姓刻時間及钮刻期間須咬触之半導體材料 量。不過’於該具體實施例及本發明所有其他之具體實施 例中’該蝕刻溶液之種類可與粗化溶液相同。該些溶液之 組成份可相同或相異。尤其，稀釋後之粗化溶液可作為敍 刻溶液。舉例而言，含有HF、hn〇aH2〇之溶液可作為粗 化溶液。 基本上，蝕刻可於粗化步驟結束後開始，或者粗化步 驟可於蝕刻步驟結束後開始。 於本發明製程之較佳具體實施例中，蝕刻溶液係於蝕 刻結束前自半導趙基板之頂側被移除，其較佳是由半導體 頂側被刮除。據此，可於適當的時間點（尤其是於粗化步驟 結束前，亦即半導體基板底側仍與粗化溶液接觸時）順利地 中止頂側之钮刻步驟。基本上，可藉由任何已知的到除裝 置來進行蝕刻溶液的刮除步驟，尤其可藉由一種以上所謂 的空氣刀，而所使用的氣體不一定要是空氣。亦可使用其 他氣體或氣體混合物。 於本發明製程之較佳具體實施例中，蝕刻溶液係於粗 化期間前二分之一的時間内提供至半導體基板之頂側較 佳係於粗化期間前五分之一的時間内，且該蝕刻溶液係於 粗化步驟結束前即由頂側移除。據此，於粗化步驟開始進 行後，即於相當短的時間内自半導體基板之頂側咬蝕半導 體材料，如此可避免粗化期間半導體基板（簡稱基板）之彎曲 現象。據此，粗化期間基板不會發生彎曲現象，並可均勻 地進行粗化步驟。於特佳具體實施例中，蝕刻溶液係於粗 8 201207928 化步驟開始進行時被提供至半導體基板之頂側，俾使蝕刻 及粗化步驟同時進行。 蝕刻溶液舉例可藉由如上所述之刮除方式而由頂側移 除。較佳為，蝕刻溶液係於粗化期間前二分之一之時間内 被移除，較佳係於粗化期間前五分之一之時間内。 若使用蝕刻速率小於粗化溶液之蝕刻溶液，則蝕刻溶 液基本上也可留置於基板頂側直到粗化步驟結束。然而， 使用不同於粗化溶液之蝕刻溶液會增加製程的複雜度，且 粗化溶液可能會因為喷進或刮進粗化溶液中之银刻溶液可 遭到汙染。若蝕刻溶液的蝕刻速率於蝕刻期間下降（如，蝕 刻期間敍刻溶液減少所造成），則粗化溶液及蝕刻溶液可使 用相同種類的溶液，且蝕刻溶液可留置於基板頂側直到粗 化步驟結束》 於本發明製程之另一具鱧實施例中，蝕刻溶液係於粗 化步驟結束前提供至半導體基板頂側，且於粗化步驟結束 時與粗化溶液一同被移除。較佳為，蝕刻溶液係於粗化期 間後二分之一的時間内提供至基板頂側，特佳是於粗化期 間後五分之一的時間内提供。較佳是於水中清洗半導體基 板以同時移除钱刻溶液及粗化溶液。據此，可進一步降 低製程的複雜度，無需另外進行#刻溶液的移除步驟。然 而該基板可能於提供钱刻溶液至頂側前之粗化期間變 形。於提供蝕刻溶液至頂側且自基板頂側咬蝕足量半導體 材料後，可再降低先前可能造成的彎曲現象。但某些例子 9 201207928 中粗化期間所導致的暫時彎曲現象可能已造成基板底側無 法均勻地進行粗化步驟。 實際上’已證實若基板底側於整個蝕刻期間皆與粗化 溶液接觸，則可解決上述問題。 於本發明製程之較佳具體實施例中，該半導體基板係 於粗化期間水平運過填滿粗化溶液之凹槽。基於本發明之 目的，被填滿之凹槽不應解讀為凹槽一定要完全被填滿， 其僅是一種實施態樣。 於本發明製程之改良態樣中，半導體基板之頂側係於 蝕刻及粗化步驟結束後，藉由化學研磨溶液進行單側蝕 刻。如上所述’可對半導體基板稍微粗化之表面進行較簡 易的研磨製程。因此，此改良態樣可達到低複雜性之製程， 以提供一側研磨而另一側粗化之平面半導體基板，以用於 生產最新的太陽能電池。 據此，為解決上述問題，不一定要對半導體底側進行 粗化。或者，亦可對頂側進行粗化。於本發明製程之另一 態樣中，半導體基板係排列成，使其底側朝下並於蝕刻期 間由下方與蝕刻溶液接觸。於粗化期間，提供粗化溶液至 半導體頂側上，以粗化半導體基板之頂側。選擇蝕刻溶液 及蝕刻時間，使半導體底側所咬蝕之半導體材料少於頂側。 於太陽能電池之實例中’依本發明製程之態樣，半導 體基板之頂側係對應太陽能電池的前側。當基板頂側與粗 化溶液接觸時，即開始進行粗化步驟’反之當其不再接觸 201207928 時則結束。當基板底側與触刻溶液接觸時，即開始進行敍 刻步驟，反之當其不再接觸時則結束。 本發明製程之另一態樣具有上述相同之優點。尤其可 提供無彎曲現象之不對稱粗化半導體基板。 於本發明製程之較佳具體實施例中，半導體基板底側 咬蝕之半導體材料量少於半導體基板頂側咬蝕之半導體材 料量的50%，較佳是少於2〇〇/。。 實際上，已證實較佳是自半導體基板底側咬蝕厚度少 於10 μηι之薄層，較佳是少於3 μπι，特佳是少於】μιη。 於較佳具體實施例中，半導體基板係設置於蝕刻溶液 之表面，使蝕刻溶液不與半導體基板頂側接觸。又，W〇 2005/093788 A1已揭示如何實施。基板不一定要在整個蝕刻 期間都依其所述之方式而置於蝕刻溶液的表面。 於本發明另一態樣製程之具體實施例中，粗化溶液亦 作為蝕刻溶液。於部分粗化期間，頂側將暫時位於蝕刻溶 液之表面下方，以提供粗化溶液至半導體基板頂側。如上 所述，若將基板置於蝕刻溶液中，使其頂側完全被蝕刻溶 液潤濕，則頂側係位於表面下方。 另一具體實施例係將粗化溶液喷灑至半導體基板之頂 側上。據此，不同於蝕刻溶液的粗化溶液則可順利地置於 半導體基板的頂側。然而，於該具體實施例及其他所有的 具體實施例中，蝕刻溶液之種類可與粗化溶液相同。該些 溶液的組成份可相同或相異。 201207928 又，蝕刻基本上可從粗化步驟結束後開始，或者粗化 可從飯刻步驟結束後開始。 較佳為，粗化溶液係於蝕刻步驟結束前自半導體基板 頂側移除，其較佳係從半導體基板頂側刮除。如上所述， 粗化溶液基本上可藉由任何習知刮除裝置來進行刮除步 驟，尤其可使用一種以上之空氣刀來進行。其亦可使用其 他氣體或氣體混合物。 於較佳具體實施例中，粗化溶液係於蝕刻期間前二分 之一之時間内提供至半導體基板之頂側，較佳係於蝕刻期 間前五分之一之時間内提供。於特佳具體實施例中，粗化 溶液係於蝕刻開始進行時即提供至半導體基板之頂側，俾 使蝕刻及粗化步驟同時進行。據此，基板不會在粗化期間 彎曲’俾可進行均勻的粗化步驟。粗化溶液較佳是於蝕刻 結束前即從頂侧移除。 於另一具體實施例中’粗化溶液係於蝕刻開始前提供 至半導體基板之頂側，並於钱刻結束時與钮刻溶液一同被 移除。較佳是將半導體基板置於水中清洗，以同時移除蝕 刻溶液及粗化溶液。據此，可進一步降低製程的複雜度， 無需額外進行粗化溶液移除的步驟。然而，於蝕刻溶液與 基板底側接觸前，基板可能於粗化期間變形。待蝕刻溶液 與該底側接觸且由底側咬蝕足量之半導體材料後，可減少 先前可能造成的彎曲現象。但某些例子中粗化期間所導致 的暫時彎曲現象可能已造成基板頂側無法均勻地進行粗化 步驟。 12 201207928 實際上’已證實若基板底側於整個粗化期間皆與姓刻 溶液接觸，則可解決上述問題。 較佳是將半導體基板水平運過填滿蝕刻溶液之凹槽。 於本發明製程之另一態樣中，半導體基板之底側係於 蝕刻及粗化步驟結束後’藉由化學研磨溶液進行單側触 刻。如上所述，因此’其可達到低複雜性之製程，以提供 一側研磨而另一側粗化之平面半導體基板，以用於生產最 新的太陽能電池。 本發明裝置包括：一凹槽，其填滿第一蝕刻溶液；一 運輸裝置，以排列一半導體基板，使半導體基板之底側朝 下並由下方與第一蝕刻溶液接觸。此外，其包括一喷灌裝 置，以將第二蝕刻溶液喷灑至半導體基板的頂側。為達本 發明之目的，被填滿的凹槽不一定是指凹槽完全填滿第一 蝕刻溶液。基本上，填滿部分凹槽即可。 於該裝置之第一具體實施例中，粗化溶液係作為第一 蝕刻溶液。據此，該裝置可用於實施本發明之製程態樣， 以對基板底側進行粗化。 於該裝置之第二具體實施例中，粗化溶液係作為第二 蝕刻溶液。據此，該裝置可用於實施本發明之另一製程態 樣’以對基板頂側進行粗化。 較佳為，提供相同種類之粗化溶液作為第一蝕刻溶液 及第二蝕刻溶液》特佳是使用組成份相同之粗化溶液作為 第一蝕刻溶液及第二蝕刻溶液。 13 (!· 201207928 喷灑裝置可於適當的時間點，將第二蝕刻溶液提供至 基板頂側。較佳為，喷灑裝置係設置於第一蝕刻溶液表面 的上方。 較佳為，提供將半導體基板水平運過凹槽之水平運輸 裝置作為運輸裝置。該水平運輸裝置舉例可由適當排列的 運輸滾輪組形成。 於本發明裝置之具體實施例中，該噴灑裝置係置於凹 槽的出口區。為達本發明之目的，凹槽出口區係指半導體 基板通過凹槽之運輸途徑末端的區域，其亦包括凹槽上方 的區域。 於本發明另一較佳具體實施例中，該喷灑裝置係置於 凹槽的入口區，據此，於基板底側由下方與第一蝕刻溶液 接觸後（即粗化或蝕刻步驟開始時），第二蝕刻溶液可在相當 紐的時間内提供至基板頂側，或者於粗化或蝕刻期間前二 为之一的時間内提供，較佳係於粗化或蝕刻期間前五分之 一的時間内提供。為達本發明之目的，該凹槽之入口區係 才曰半導體基板通過凹槽之運輸途徑起始的區域，其亦包括 凹槽上方的區域。 該裝置之較佳具體實施例更包括一到除裝置，以將喷 灑上的第二蝕刻溶液自半導體基板之頂側刮除。如此可輕 易地將第二蝕刻溶液從基板上移除，且可順利地分別控制 蝕刻時間或粗化時間。基本上，可使用任何適於具體應用 之刮除裝置。尤其，可使用一種以上所謂的空氣刀作為刮 201207928 除裝置。該刮除裝置較佳是使用空氣作為刮除第二蝕刻溶 液的媒介。然而，基本上也可使用其他氣體或氣體混合物。 該到除裝置較佳是設置於運輸裝置之運輸方向上喷麗 裝置的下游處。 另一實施本發明製程之裝置包括：一凹槽，其填滿粗 化溶液；以及一運輸裝置，以排列一半導體基板，使半導 體基板之底側朝下並由下方與粗化溶液接觸。該運輸裝置 係用於將半導體基板降至粗化溶液中，使半導體基板之頂 側暫時位於粗化溶液表面之下方。此外，另提供用於將粗 化溶液由半導體基板頂側刮除的刮除裝置。為達本發明之 目的，若將基板降至粗化溶液中，使粗化溶液完全潤濕頂 側’則頂側係位於粗化溶液表面之下方。 類似於上述具有喷灑裝置之具體實施例，該運輸裝置 亦可設置為，將基板降至凹槽出口區之粗化溶液中，或者 將其降至凹槽入口區之粗化溶液中。 較佳為，提供到除裝置，以將粗化溶液從基板頂側刮 除。又，可提供一種以上空氣刀作為刮除裝置。特佳為， 將運輸裝置設置為，將基板降至凹槽入口區之粗化溶液 中。可使用上述氣體或氣體混合物作為刮除裝置的媒介。 於較佳具體實施例中’該運輸裝置係由運輸滾輪構 成。較佳為，有些運輸滾輪係設置為，將半導體基板水平 運過部分凹槽。 【實施方式】 201207928 下文將參考圖式’更加詳細敘述本發明。具有類似功 效之元件盡量用相同元件符號表示。 圖1係本發明第一具體實施例之製程及裝置示意圖。該 裝置包括填滿粗化溶液5之凹槽4。於該具體實施例中該 粗化溶液係作為第一蝕刻溶液，運輸滾輪9係作為半導體基 板1之運輸裝置。該些運輸滾輪9係排列於水平面上，以作 水平運輸裝置’俾可將該些半導體基板簡稱為基板）水平 運輸通過該凹槽4。該些運輸滾輪9係排列成，使基板丨之底 側2朝下並由下方與粗化溶液$接觸。如圖1之示意，該些運 輸滾輪9更設置成’使基板丨排列於粗化溶液5之表面6，且 粗化溶液5不與基板1之頂側3接觸。 凹槽4之入口區13設有一喷灑裝置11，以將蝕刻溶液7 喷灑至基板1的頂側3上。於該具體實施中，該蝕刻溶液7係 作為第二蝕刻溶液。如圖1所示，該喷灑裝置係設於粗化溶 液之表面6上方》 此外，亦設有一空氣刀（air knife) 15，係用於將噴灑上 之蝕刻溶液7自基板1上刮除。該空氣刀15係使用氣體16作 為刮除蝕刻溶液7之媒介。基本上，任何適用於該具體應用 之氣體16或氣體混合物16皆可作為媒介，其中較佳係使用 空氣。 如圖1之示意，該些基板1係藉由運輸滾輪9而排列成， 基板1之底側2朝下且由下方與粗化溶液5接觸。據此，粗化 溶液5將對基板1之底側進行粗化《因此，一旦基板進入該 凹槽4中與該粗化溶液5接觸，即開始進行粗化步驟，其亦 201207928 是開始進行粗化之時間點。該粗化步驟係、持續到基板丄離開 凹槽4且粗化溶液自其底側2移除（如於水中清洗）為止。 該触刻溶液7係藉由喷麗裝411而喷麗至凹槽4入口區 13之基板頂側3上，此時即開始進行頂側3之㈣！步驟。之 後（即钱刻結束時）’使用空氣刀15，將钮刻溶液7自頂側3 到除，俾使㈣溶液7自基板！之頂側3移除。^空氣刀⑽ 設置於遠離凹槽4之出口處，舰刻溶液7會在粗化步驟結 束前自頂側3被移除》 於圖1之具體實施例中，該蝕刻溶液7係於粗化期間前 五分之一的時間内提供至基板丨之頂側3。空氣刀15之位置 可依據蝕刻施行時間來變化。若欲進行較短時間之蝕刻’ 空氣刀可設置於圖1更偏左的位置，&之則I設置於偏更右 的位置。較佳為，粗化溶液5與蝕刻溶液7係使用相同種類 的溶液。 然而，於每一實例中，喷灑裝置11及空氣刀15係設置 為，於所進行的蝕刻時間及所使用之蝕刻溶液下，得以確 保基板1之頂側3所移除之半導體材料量少於底側2。 右使用蝕刻溶液55來取代圖1的粗化溶液5而粗化溶液 57取代蝕刻溶液7,則可完成本發明另一製程態樣。在此， 於蝕刻時，底側2會由下方與蝕刻溶液55接觸。一旦基板進 入凹槽4與蝕刻溶液55接觸，則開始進行蝕刻。該蝕刻步驟 持續進行至基板離開凹槽4且蝕刻溶液55自其底側2移除 (如於水中清洗）為止。該粗化溶液57係藉由喷灑裝置丨丨而喷 灑至基板1之頂側3上，此時即開始進行頂側3之粗化步驟。 17 201207928 之後（即粗化步驟結束時），使用空氣刀15，將粗化溶液57 自頂側3到除，俾使粗化溶液57自基板1之頂側3移除》若空 氣刀15係設置於遠離凹槽4之出口處，則粗化溶液57會在蝕 刻步驟結束前自頂側3被移除。於本發明另一具體製程實施 態樣中，喷灑裝置11及空氣刀15係設置為，於所進行的粗 化時間及所使用之蝕刻溶液55及粗化溶液55下，得以確保 基板1之底側2所移除之半導體材料量少於頂側3。 圖2之具體實施例與圖1之差異處在於，喷灑裝置^係 設置於凹槽4之出口區25,且未設置空氣刀。本具體實施例 係使用填滿水（又稱為洗滌水29)之水槽27。當基板1自凹槽4 離開時’粗化溶液所形成之膜層23仍殘留於其底側2。該膜 層23接著會與基板1頂側3上之触刻溶液7 一同於洗條水29 中被洗除。隨後，於圖2之具體實施例中，該蝕刻溶液7係 於粗化步驟結束前提供至晶圓之頂側3，而蝕刻步驟係於將 基板1置於洗滌水29中清洗時結束（與粗化步驟一起結束）。 蝕刻係從喷灑裝置11設置處開始。如圖2之示意（非實際尺 寸）’該喷灑裝置係設置為，蝕刻溶液7係於粗化期間最後 二分之-或最後五分之-的時間内提供。為了某種應用， 較佳可於出口區25設置至少—空氣刀，以避免#刻溶液7流 進水槽27中。 於圖2中|本上可再使用粗化溶液57來取代蚀刻溶液 7,而㈣減55取代粗化溶液5,以提供本發明另一製程 實施態樣。因此，可將噴灑奘番1丨 貝礎裒置11移至更左邊，以拉長粗 化溶液57對基板1頂側3進行粗化的時間。 201207928 圖2中亦可設置運輸滾輪9,以作為運輸裝置。該些運 輸滚輪9可再排列成一水平面，以將該些基板1水平運過該 凹槽4°相較於運輸滾輪9,其更設有將基板1運至凹槽外之 替代運輪滾輪30。另設有將基板運進水槽27中之接續運輸 滚輪33 ’其包括將基板1運過水槽27之運輸滾輪31。 圖3就像其他圖式一樣，其並未依照實際尺寸繪製，其 與圖1之差異處在於，其未設置喷灑裝置。由運輸滾輪9、 49形成的運輸裝置9 ' 49可將基板1降入粗化溶液中，其係 藉由替代運輸滾輪49 (取代如上所述排列於水平面之運輸 /衰輪9) ’使基板1頂側3暫時位於粗化溶液5之表面6下方， 而粗化溶液因該些替代運輸滾輪49而被提供至基板1之頂 側3上，以作為蝕刻溶液47。當粗化溶液5與基板丨之頂側3 接觸’即開始進行姓刻。類似於圖丨，當作為蝕刻溶液之粗 化溶液47藉由空氣刀15而從基板頂側3被刮除時，蝕刻步驟 則結束。 顯然地’運輸裝置可藉由其他非替代運輸滾輪49之元 件（如提升系統或傳送帶）構成，以將基板丨降至粗化溶液 中。然而，較佳可為與流線生產方式（in_Hne production)相 容之系統。 於圖3所不之具體實施例中’該些替代運輸滾輪49係排 列於填滿粗化溶液5之凹槽45入 輸滚輪49可排列於凹槽μ之出 15。另外可如圖2所示增加水槽 \ 口區43。或者，該些替代運 出口區44，且可移除空氣刀 攢，以完成類似圖2之具體實 施態樣’惟不同處在於， 噴灑裝置11已被替代運輸滾輪49 201207928 取代’以將基板1降至粗化溶液5中，使基之頂側3暫時 位於粗化溶液5之表面6下方。 圖所示之裝置可用於進行本發明之製程，其中基板之 底側待粗化且由下方與粗化溶液接觸（如上所述）。此外，該 裝置顯然亦可用於進行本㈣另—雜之製程，以對基板 之頂側進行粗化。 當上述所有的製程步驟結束時，可另外增加已知的單 側研磨#刻步驟，以對基板丨之頂側3進行化學研磨，而相 對應的化學研磨裝置可增設於上述裝置中。較佳為該研 磨蝕刻步驟可使用化學研磨溶液來進行。 【圖式簡單說明】 圖1係本發明製程之第一具體實施例及本發明裝置之第一 具體實施例示意圖。 圖2係本發明製程之第二具體實施例及本發明裝置之第二 具體實施例示意圖。 圖3係本發明製程之第三具體實施例及本發明裝置之第三 具體實施例示意圖。 【主要元件符號說明】 1半導體基板 2半導體基板之底側 3半導體基板之頂側 20 201207928 4凹槽 5粗化溶液 6粗化溶液的表面 7蝕刻溶液 9運輸滾輪 11 喷灑裝置 13 入口區 15 空氣刀 16 空氣 23 粗化溶液之膜層 25 出口區 27 水槽 29 洗蘇水 30 替代運輸滾輪 31 水槽的運輸滾輪 33 接續運輸滾輪 43 入口區 44 出口區 45 凹槽 47 作為蝕刻溶液的粗化溶液 21 201207928 49 替代運輸滾輪 55 蝕刻溶液 57 粗化溶液 22S 201207928 A device having the features of claim 27 or claim 32 can solve the problem. In each of the examples, the sub-item relates to the preferred embodiment of the invention. The concept of the process is to arrange the semiconductor substrate to be roughened to the bottom side, so that it is in contact with the roughening solution from below during the roughening process, and provides The surname is engraved to the top side of the semiconductor substrate such that the semiconductor material is bitten from the top side of the semiconductor substrate during the engraving. The button engraving solution and the last time are selected so that the amount of semiconductor material that is etched on the top side of the semiconductor substrate is less than the bottom side of the semiconductor substrate. For the purposes of the present invention, the bottom side and the top side of a semiconductor substrate (referred to as a substrate) refer to the side of the planar semiconductor substrate having the largest area. The bottom half of the conductor substrate is roughened. In a solar cell substrate (such as a germanium wafer), the bottom side thereof generally corresponds to the front side of the solar cell. When the bottom side of the substrate is in contact with the roughening solution, the roughening step is started, and when it is no longer in contact (for example, when the substrate is washed in water, the roughening solution is removed from the bottom side of the substrate), the roughening step is terminated. When the top side of the substrate is in contact with the etching solution, the etching step is started, and when it is no longer in contact (for example, when the etching solution is removed from the top side of the substrate), the etching step is ended. The process of the present invention is a wet chemical process which is less complex than a plasma process or a cutting process. In addition, it is easy to integrate with widely used industrial streamline production methods. The conventional roughening solution which has been used for the substrate symmetrical roughening process can also be used in the process of the present invention. According to this, (10) the material on the top side of the semiconductor substrate is less than the bottom layer, but the bite (four) financial material can be 6 201207928 The bending phenomenon of the semiconductor substrate. Therefore, the process of the present invention can asymmetrically roughen the semiconductor substrate without bending. The present invention has found an unexpected phenomenon that the amount of material that is sebated from the bottom side of the roughening solution can be avoided (or at least greatly reduced) by roughening the substrate by simply puncturing a small amount of semiconductor material from the top side of the substrate. Bending phenomenon. In a preferred embodiment of the present invention, the semiconductor material on the top side of the semiconductor substrate is less than 5%, preferably less than 20%, of the semiconductor material on the bottom side of the semiconductor substrate. It is confirmed that the thin layer having a thickness of less than 10 μm from the top side of the semiconductor substrate is preferably less than 3 μm, particularly preferably less than 1 μm. In a preferred embodiment of the process of the invention, the semiconductor substrate is disposed on the surface of the roughening solution, and the roughening solution is not in contact with the top side of the semiconductor substrate. WO 2005/093788 Α 1 reveals how to implement it accordingly. The substrate does not have to be placed on the surface of the roughening solution in the manner described throughout the entire roughening period. In a particular embodiment of the invention, the top side is temporarily disposed below the surface of the roughening solution during a partial singulation to provide an etch solution to the top side of the semiconductor substrate. For the purpose of the present invention, if the substrate is placed in the roughening solution to 'completely wet the top side of the roughening solution, the top side is located below the surface." The embodiment is exemplified by completely immersing the substrate in the roughening solution. in. In this embodiment, the roughening solution is simultaneously used as an etching solution. In another embodiment of the process of the present invention, the etching solution is sprayed onto the top side of the semiconductor substrate. According to this, the surname solution different from the roughening solution can be smoothly placed on the top side of the semiconductor substrate. The etching solution is therefore easy to use with the amount of semiconductor material that must be bitten during the time required for the engraving and the engraving. However, the type of the etching solution may be the same as the roughening solution in the specific embodiment and all other specific embodiments of the present invention. The components of the solutions may be the same or different. In particular, the diluted roughening solution can be used as a sizing solution. For example, a solution containing HF, hn〇aH2〇 can be used as a roughening solution. Basically, the etching can be started after the end of the roughening step, or the roughening step can be started after the etching step is completed. In a preferred embodiment of the process of the present invention, the etching solution is removed from the top side of the semiconductor substrate before the end of the etch, which is preferably scraped off from the top side of the semiconductor. Accordingly, the top side buttoning step can be smoothly suspended at an appropriate time point (especially before the end of the roughening step, i.e., when the bottom side of the semiconductor substrate is still in contact with the roughening solution). Basically, the scraping step of the etching solution can be carried out by any known means for removing the device, in particular by more than one so-called air knife, and the gas used does not have to be air. Other gases or gas mixtures can also be used. In a preferred embodiment of the process of the present invention, the etching solution is provided to the top side of the semiconductor substrate during the first half of the roughening period, preferably within the first fifth of the roughening period. And the etching solution is removed from the top side before the end of the roughening step. Accordingly, after the roughening step is started, the semiconductor material is sebated from the top side of the semiconductor substrate in a relatively short period of time, so that the bending phenomenon of the semiconductor substrate (referred to as the substrate) during the roughening can be avoided. According to this, the substrate does not bend during the roughening, and the roughening step can be performed uniformly. In a specific embodiment, the etching solution is applied to the top side of the semiconductor substrate at the beginning of the coarsening process, and the etching and roughening steps are performed simultaneously. An example of the etching solution can be removed from the top side by a doctoring method as described above. Preferably, the etching solution is removed during the first half of the roughening period, preferably within the first fifth of the roughening period. If an etching solution having an etching rate lower than that of the roughening solution is used, the etching solution can be left substantially on the top side of the substrate until the end of the roughening step. However, the use of an etching solution different from the roughening solution increases the complexity of the process, and the roughening solution may be contaminated by the silver etching solution sprayed or scraped into the roughening solution. If the etching rate of the etching solution drops during the etching (eg, caused by a decrease in the etching solution during etching), the same type of solution can be used for the roughening solution and the etching solution, and the etching solution can be left on the top side of the substrate until the roughening step In another embodiment of the process of the present invention, the etching solution is supplied to the top side of the semiconductor substrate before the end of the roughening step, and is removed together with the roughening solution at the end of the roughening step. Preferably, the etching solution is supplied to the top side of the substrate one-half of the time after the roughening period, particularly preferably one-fifth of the time after the roughening period. Preferably, the semiconductor substrate is cleaned in water to simultaneously remove the solvent solution and the roughening solution. Accordingly, the complexity of the process can be further reduced, and no additional removal step of the solution can be performed. However, the substrate may be deformed during roughening prior to providing the solution to the top side. By providing an etch solution to the top side and puncturing a sufficient amount of semiconductor material from the top side of the substrate, the previously possible bending phenomenon can be reduced. However, the temporary bending phenomenon caused by the roughening during some examples 9 201207928 may have caused the bottom side of the substrate to be uniformly roughened. In fact, it has been confirmed that the above problem can be solved if the bottom side of the substrate is in contact with the roughening solution throughout the etching. In a preferred embodiment of the process of the present invention, the semiconductor substrate is horizontally transported through the recess filled with the roughening solution during roughening. For the purposes of the present invention, a filled recess should not be interpreted as a recess that must be completely filled, which is merely one implementation. In a modified aspect of the process of the present invention, the top side of the semiconductor substrate is etched by a single side etching by a chemical polishing solution after the etching and roughening steps are completed. As described above, a relatively simple polishing process can be performed on the surface on which the semiconductor substrate is slightly roughened. Therefore, this improved aspect can achieve a low complexity process to provide a planar semiconductor substrate that is ground side by side and roughened on the other side for use in producing the latest solar cells. Accordingly, in order to solve the above problem, it is not necessary to roughen the bottom side of the semiconductor. Alternatively, the top side may be roughened. In another aspect of the process of the present invention, the semiconductor substrate is arranged with its bottom side facing down and in contact with the etching solution from below during etching. During the roughening, a roughening solution is provided onto the top side of the semiconductor to roughen the top side of the semiconductor substrate. The etching solution and etching time are selected such that the semiconductor material etched on the bottom side of the semiconductor is less than the top side. In the example of a solar cell, the top side of the semiconductor substrate corresponds to the front side of the solar cell in accordance with the process of the present invention. When the top side of the substrate is in contact with the roughening solution, the roughening step is started, whereas when it is no longer in contact with 201207928, it ends. When the bottom side of the substrate is in contact with the etch solution, the elaboration step begins, and vice versa when it is no longer in contact. Another aspect of the process of the present invention has the same advantages as described above. In particular, an asymmetrically roughened semiconductor substrate without bending can be provided. In a preferred embodiment of the process of the present invention, the amount of semiconductor material etched on the bottom side of the semiconductor substrate is less than 50%, preferably less than 2 Å, of the amount of semiconductor material etched on the top side of the semiconductor substrate. . In practice, it has been confirmed that it is preferable to etch a thin layer having a thickness of less than 10 μη from the bottom side of the semiconductor substrate, preferably less than 3 μm, particularly preferably less than μm. In a preferred embodiment, the semiconductor substrate is disposed on the surface of the etching solution such that the etching solution does not contact the top side of the semiconductor substrate. Also, W〇 2005/093788 A1 has revealed how to implement it. The substrate does not have to be placed on the surface of the etching solution in the manner described throughout the etching. In a specific embodiment of another aspect of the process of the invention, the roughening solution also acts as an etching solution. During partial roughening, the top side will be temporarily below the surface of the etching solution to provide a roughening solution to the top side of the semiconductor substrate. As described above, if the substrate is placed in an etching solution such that the top side thereof is completely wetted by the etching solution, the top side is located below the surface. Another embodiment sprays the roughening solution onto the top side of the semiconductor substrate. According to this, the roughening solution different from the etching solution can be smoothly placed on the top side of the semiconductor substrate. However, in this embodiment and all other embodiments, the type of etching solution may be the same as the roughening solution. The components of the solutions may be the same or different. 201207928 Again, the etching can basically begin after the end of the roughening step, or the roughening can begin after the end of the meal step. Preferably, the roughening solution is removed from the top side of the semiconductor substrate before the end of the etching step, preferably from the top side of the semiconductor substrate. As noted above, the roughening solution can be substantially subjected to a scraping step by any conventional scraping device, particularly using more than one air knife. It can also use other gases or gas mixtures. In a preferred embodiment, the roughening solution is provided to the top side of the semiconductor substrate during the first one-half of the etch period, preferably during the first one-fifth of the etch period. In a particularly preferred embodiment, the roughening solution is provided to the top side of the semiconductor substrate as the etching begins, and the etching and roughening steps are performed simultaneously. According to this, the substrate is not bent during the roughening, and a uniform roughening step can be performed. The roughening solution is preferably removed from the top side before the end of the etching. In another embodiment, the roughening solution is provided to the top side of the semiconductor substrate prior to the start of etching and is removed along with the buttoning solution at the end of the burn. Preferably, the semiconductor substrate is washed in water to simultaneously remove the etching solution and the roughening solution. Accordingly, the complexity of the process can be further reduced without the need for additional steps of roughening solution removal. However, the substrate may be deformed during roughening before the etching solution contacts the bottom side of the substrate. After the solution to be etched is in contact with the bottom side and a sufficient amount of semiconductor material is sebated from the bottom side, the previously possible bending phenomenon can be reduced. However, the temporary bending phenomenon caused by the roughening during some examples may have caused the top side of the substrate to be unable to perform the roughening step uniformly. 12 201207928 Actually, it has been confirmed that the above problem can be solved if the bottom side of the substrate is in contact with the surname solution during the entire roughening period. Preferably, the semiconductor substrate is horizontally transported through a recess filled with an etching solution. In another aspect of the process of the present invention, the bottom side of the semiconductor substrate is unilaterally etched by a chemical polishing solution after the etching and roughening steps are completed. As described above, therefore, it is possible to achieve a process of low complexity to provide a planar semiconductor substrate that is ground on one side and roughened on the other side for use in producing the latest solar cells. The apparatus of the present invention comprises: a recess filled with a first etching solution; and a transporting means for arranging a semiconductor substrate with the bottom side of the semiconductor substrate facing downward and being in contact with the first etching solution from below. Further, it includes a sprinkler to spray the second etching solution onto the top side of the semiconductor substrate. For the purposes of the present invention, a filled recess does not necessarily mean that the recess completely fills the first etching solution. Basically, fill in some of the grooves. In a first embodiment of the apparatus, the roughening solution is used as the first etching solution. Accordingly, the apparatus can be used to practice the process aspects of the present invention to roughen the underside of the substrate. In a second embodiment of the apparatus, the roughening solution acts as a second etching solution. Accordingly, the apparatus can be used to practice another process aspect of the present invention to roughen the top side of the substrate. Preferably, the same type of roughening solution is provided as the first etching solution and the second etching solution. It is particularly preferable to use the roughening solution having the same composition as the first etching solution and the second etching solution. 13 (!. 201207928 The spraying device can provide the second etching solution to the top side of the substrate at an appropriate time point. Preferably, the spraying device is disposed above the surface of the first etching solution. Preferably, the The horizontal transport device in which the semiconductor substrate is horizontally transported through the recess serves as a transport device. The horizontal transport device can be formed by a suitably arranged transport roller set. In a specific embodiment of the device of the present invention, the spray device is placed in the exit region of the recess. For the purposes of the present invention, the groove exit region refers to the region of the end of the transport path of the semiconductor substrate through the recess, which also includes the region above the recess. In another preferred embodiment of the invention, the spray The device is placed in the entrance region of the recess, whereby the second etching solution can be supplied to the anode for a relatively short period of time after the bottom side of the substrate is contacted with the first etching solution from below (ie, at the beginning of the roughening or etching step) The top side of the substrate, or one of the first two during the roughening or etching period, is preferably provided during the first one fifth of the roughening or etching period. For this purpose, the entrance region of the recess is the region where the semiconductor substrate starts through the transport path of the recess, and also includes the region above the recess. The preferred embodiment of the device further includes a removing device to The second etching solution sprayed on the top side of the semiconductor substrate is scraped off. The second etching solution can be easily removed from the substrate, and the etching time or the roughening time can be smoothly controlled separately. Any scraping device suitable for the particular application is used. In particular, more than one so-called air knife can be used as the scraping 201207928. The scraping device preferably uses air as a medium for scraping the second etching solution. However, basically Other gas or gas mixtures may also be used. The removal device is preferably disposed downstream of the spray device in the transport direction of the transport device. Another device for practicing the process of the present invention includes: a recess that fills the roughening a solution; and a transport device for arranging a semiconductor substrate such that a bottom side of the semiconductor substrate faces downward and is in contact with the roughening solution from below. The semiconductor substrate is lowered into the roughening solution such that the top side of the semiconductor substrate is temporarily located below the surface of the roughening solution. Further, a scraping device for scraping the roughening solution from the top side of the semiconductor substrate is provided. For the purpose of the present invention, if the substrate is lowered into the roughening solution and the roughening solution is completely wetted to the top side, then the top side is located below the surface of the roughening solution. Similar to the above specific embodiment with a spraying device, The transport device may also be arranged to reduce the substrate to the roughening solution in the exit region of the recess or to reduce it to the roughening solution in the inlet region of the recess. Preferably, it is provided to the removal device to roughen the solution. It is scraped off from the top side of the substrate. Further, more than one air knife can be provided as the scraping device. It is particularly preferable to arrange the transport device to lower the substrate into the roughening solution in the groove inlet region. The above gas or gas can be used. The mixture acts as a medium for the scraping device. In a preferred embodiment, the transport device is comprised of a transport roller. Preferably, some of the transport rollers are arranged to transport the semiconductor substrate horizontally through a portion of the recess. [Embodiment] 201207928 Hereinafter, the present invention will be described in more detail with reference to the drawings'. Components with similar effects are denoted by the same component symbols as much as possible. 1 is a schematic view of a process and apparatus of a first embodiment of the present invention. The device comprises a recess 4 filled with a roughening solution 5. In this embodiment, the roughening solution is used as the first etching solution, and the transport roller 9 serves as a transport means for the semiconductor substrate 1. The transport rollers 9 are arranged on a horizontal plane for horizontal transport by the horizontal transport means, which may be referred to simply as substrates. The transport rollers 9 are arranged such that the bottom side 2 of the substrate is facing downward and is in contact with the roughening solution $ from below. As shown in Fig. 1, the transport rollers 9 are further arranged such that the substrate 丨 is arranged on the surface 6 of the roughening solution 5, and the roughening solution 5 is not in contact with the top side 3 of the substrate 1. The inlet region 13 of the recess 4 is provided with a spraying device 11 for spraying the etching solution 7 onto the top side 3 of the substrate 1. In this embodiment, the etching solution 7 serves as a second etching solution. As shown in FIG. 1, the spraying device is disposed above the surface 6 of the roughening solution. In addition, an air knife 15 is also provided for scraping the sprayed etching solution 7 from the substrate 1. . The air knife 15 uses a gas 16 as a medium for scraping the etching solution 7. Basically, any gas 16 or gas mixture 16 suitable for this particular application can be used as a medium, with air preferably being used. As shown in FIG. 1, the substrates 1 are arranged by the transport rollers 9, and the bottom side 2 of the substrate 1 faces downward and is in contact with the roughening solution 5 from below. Accordingly, the roughening solution 5 will roughen the bottom side of the substrate 1. Therefore, once the substrate enters the groove 4 and comes into contact with the roughening solution 5, the roughening step is started, and it is also 201207928. Time point. This roughening step continues until the substrate 丄 leaves the groove 4 and the roughening solution is removed from its bottom side 2 (e.g., in water). The etch solution 7 is sprayed onto the top side 3 of the substrate of the inlet region 13 of the recess 4 by the spray 411, at which point the top side 3 is started (four)! step. After that (ie, at the end of the money engraving), use the air knife 15, and the button engraving solution 7 is removed from the top side 3, and the (4) solution 7 is self-substrate! The top side 3 is removed. The air knife (10) is disposed at an exit away from the recess 4, and the anchoring solution 7 is removed from the top side 3 before the end of the roughening step. In the embodiment of Fig. 1, the etching solution 7 is roughened. Provided to the top side 3 of the substrate 前 during the first half of the period. The position of the air knife 15 can vary depending on the etching execution time. If you want to etch for a short time, the air knife can be set to the more left position of Figure 1, and the I is set to the more right position. Preferably, the roughening solution 5 and the etching solution 7 are the same type of solution. However, in each of the examples, the spray device 11 and the air knife 15 are arranged to ensure that the amount of semiconductor material removed from the top side 3 of the substrate 1 is small under the etching time and the etching solution used. On the bottom side 2. Another process aspect of the present invention can be accomplished by using the etching solution 55 instead of the roughening solution 5 of FIG. 1 and the roughening solution 57 instead of the etching solution 7. Here, at the time of etching, the bottom side 2 is in contact with the etching solution 55 from below. Once the substrate is introduced into the recess 4 and is in contact with the etching solution 55, etching is started. The etching step continues until the substrate exits the recess 4 and the etching solution 55 is removed from its bottom side 2 (e.g., in water). The roughening solution 57 is sprayed onto the top side 3 of the substrate 1 by means of a spray device, at which point the roughening step of the top side 3 begins. 17 After 201207928 (ie, at the end of the roughening step), the roughening solution 57 is removed from the top side 3 using an air knife 15, and the roughening solution 57 is removed from the top side 3 of the substrate 1 "If the air knife 15 is Located at an exit away from the recess 4, the roughening solution 57 is removed from the top side 3 before the end of the etching step. In another specific embodiment of the present invention, the spraying device 11 and the air knife 15 are disposed to ensure the substrate 1 under the roughening time and the etching solution 55 and the roughening solution 55 used. The amount of semiconductor material removed by the bottom side 2 is less than the top side 3. The difference between the embodiment of Fig. 2 and Fig. 1 is that the spray device is disposed in the outlet region 25 of the recess 4 and no air knife is provided. This embodiment uses a water tank 27 filled with water (also referred to as wash water 29). When the substrate 1 is separated from the groove 4, the film layer 23 formed by the roughening solution remains on the bottom side 2 thereof. This film layer 23 is then washed away in the strip water 29 together with the etch solution 7 on the top side 3 of the substrate 1. Subsequently, in the embodiment of FIG. 2, the etching solution 7 is provided to the top side 3 of the wafer before the end of the roughening step, and the etching step is completed when the substrate 1 is placed in the wash water 29 for cleaning (and The roughing step ends together). The etching system starts from the place where the spraying device 11 is placed. As shown in Fig. 2 (not actual size), the spraying device is arranged such that the etching solution 7 is supplied during the last two minutes or the last five minutes of the roughening period. For some applications, it is preferred to provide at least an air knife in the exit zone 25 to prevent the #etch solution 7 from flowing into the water tank 27. In Fig. 2, the roughening solution 57 can be used instead of the etching solution 7, and (4) minus 55 is substituted for the roughening solution 5 to provide another embodiment of the present invention. Therefore, the spray coating 1 can be moved to the left to lengthen the roughening solution 57 to roughen the top side 3 of the substrate 1. 201207928 A transport roller 9 can also be provided in Figure 2 as a transport device. The transport rollers 9 can be rearranged into a horizontal plane to transport the substrates 1 horizontally through the recesses 4° compared to the transport rollers 9 , and further comprise an alternate transport roller 30 for transporting the substrates 1 out of the recesses. . There is further provided a transport roller 33' for transporting the substrate into the water tank 27, which includes a transport roller 31 for transporting the substrate 1 through the water tank 27. Figure 3 is like the other figures, which are not drawn according to the actual size, which differs from Figure 1 in that it is not provided with a spray device. The transport device 9' 49 formed by the transport rollers 9, 49 can lower the substrate 1 into the roughening solution by replacing the transport roller 49 (instead of the transport/reduction wheel 9 arranged in the horizontal plane as described above) The top side 3 is temporarily located below the surface 6 of the roughening solution 5, and the roughening solution is supplied to the top side 3 of the substrate 1 as the etching solution 47 by the alternative transport rollers 49. When the roughening solution 5 is in contact with the top side 3 of the substrate crucible, the initial engraving is started. Similarly to the figure, when the roughening solution 47 as the etching solution is scraped off from the top side 3 of the substrate by the air knife 15, the etching step is ended. It will be apparent that the transport means may be constructed by other non-replacement elements of transport rollers 49 (e.g., lifting systems or conveyor belts) to reduce the substrate to the roughening solution. However, it may preferably be a system compatible with the in-line production mode (in_Hne production). In the specific embodiment of Fig. 3, the alternative transport rollers 49 are arranged in the grooves 45 filled with the roughening solution 5, and the feed rollers 49 are arranged in the grooves 51. Alternatively, the sink port area 43 can be added as shown in FIG. Alternatively, the replacement outlet zone 44, and the air knife can be removed, to accomplish a specific implementation similar to that of FIG. 2 'but the difference is that the spray device 11 has been replaced by the replacement transport roller 49 201207928' to the substrate 1 The coarsening solution 5 is lowered to temporarily place the top side 3 of the substrate below the surface 6 of the roughening solution 5. The apparatus shown in the drawings can be used to carry out the process of the present invention wherein the bottom side of the substrate is to be roughened and contacted with the roughening solution from below (as described above). In addition, the apparatus can obviously also be used to perform the (four) alternative process to roughen the top side of the substrate. At the end of all of the above process steps, a known one-side grinding step can be additionally added to chemically grind the top side 3 of the substrate crucible, and a corresponding chemical polishing apparatus can be added to the apparatus. Preferably, the polishing etching step can be carried out using a chemical polishing solution. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a first embodiment of the process of the present invention and a first embodiment of the apparatus of the present invention. Figure 2 is a schematic illustration of a second embodiment of the process of the present invention and a second embodiment of the apparatus of the present invention. Figure 3 is a schematic illustration of a third embodiment of the process of the present invention and a third embodiment of the apparatus of the present invention. [Main component symbol description] 1 semiconductor substrate 2 semiconductor substrate bottom side 3 semiconductor substrate top side 20 201207928 4 groove 5 roughening solution 6 roughening solution surface 7 etching solution 9 transport roller 11 spray device 13 inlet region 15 Air knife 16 Air 23 Coarse layer of roughening solution 25 Outlet zone 27 Sink 29 Washing water 30 Alternative transport roller 31 Transport roller 33 for the sink Continue transport roller 43 Entrance area 44 Exit area 45 Groove 47 As roughing solution for etching solution 21 201207928 49 Alternative transport roller 55 Etching solution 57 Roughening solution 22