201207913 . 六、發明說明： 【發明所屬之技術領域】 本發明*關於一料導體元件之封膠去除方法Μ 一種用於去除半導體元件外層封膠材料的預定區域，以顯 露出半導體元件為封膠材料包覆的内部構造（如：半導體 晶片等）之封膠去除方法，以及該封膠去除方法所使用的 雷射開槽加工裝置設計。 【先前技術】 •、如積體電路元件...等半導體元件，其主要令晶片黏著 於載體以及成形封膠體包覆晶片以及載體等構裝製程而完 成。為確保構裝完成的半導體元件具有良好的產品品質凡 於構裝完成後，均會進行功能性的檢測作業❶—旦發現構 裝完成的半導體元件功能異常，為了對功能異常的半導體 一件進行一般性的故障分析，或修正、補加電路等等必 須先對半導體元件包覆於晶片及載體外側的封膠加以去 除，以顯露其内部構造，方能進行後續的故障分析或修正 專程序。 目前已知的封膠去除方法係採取完全化學蝕刻除膠方 法，亦即使用可與封膠產生化學反應的蝕刻液 硫酸楚、 寻）以滴落或喷吹方式施加於半導體元件外層的封膠 材7直到半導體元件被封膠體包覆於内的晶粒或線路等 内邛構造顯露於外為止。惟此利用化學蝕刻手段之 ”万决，因無法有效的限制半導體元件之封膠上的化學反 =、品域，加以利用化學酸触反應移除全部厚度的封膠材 料’使半導體元件被封膠包覆的内部構造顯露的過程中， 201207913 因化學酸蝕的反應時間、作用範圍及作用程度等不易精確 控制，以致易造成半導體元件内部的晶片、金屬導線或其 構裝電路與酸触液接觸過久而受到侵蝕損壞，且不利於成 功的完成顯露半導體元件内部晶片或構裝構造之部分指定 區域位置。 另一方面，因半導體元件外層是由樹脂封裝體密封住 半導體晶及其電氣構裝構造’以致其半導體晶片及其電氣 構裝的位置不明確，尤其是近年來的封裝技術越發達，封 .裝尺寸、曰曰曰片尺寸縮小的封裝，晶片非一定置中的封裝於 半導體70件，|多晶片—起封裝等先進封裝樣式的半導體 疋產量增多，使用化學酸劑去除樹脂封膠開封的方法，因 無法精確對準目標，不易成功的暴露半導體晶片、金屬引 線或構裝或其部分指定的區域位置。在沒有暴露到準確的 位置時’通常的作法是在加長化學酸钱反應的時間或濃 度，使指定的目標暴露，然目標以外的部分半導體晶片、 金屬引線或其電氣構裝則因酸蝕接觸過久而損傷。θ 【發明内容】 & ^發明之一主要目的在於提供-種半導體元件之兩階 段封膠去除方法，希萨此μ 方法對半導體元件j 有完全化學_除膠 費時等缺點。 ㈤ ^構裝構造產生損壞及作業 為達成前述發明目的，本發明㈣& 兩階段封膠去除方法係包含： 导70件之 一雷射加工程底 么 置之步驟，以及丄: 定去除封膠體的區域位 雷射加工手段依半導體元件封膠體所 201207913 標定的區域的大小及位置處成形一凹槽之步驟，所述凹槽 深度未及於半導體元件内部的晶片，凹槽底部尚保留^ 膠材料； # 一化學蝕刻程序，係使用蝕刻液對已經形成凹槽的半 導體元件的封膠體進行化學酸蝕反應，使半導體元件標定 區域顯露出内部構裝構造。 本發明半導體元件之兩階段封膠去除方法，藉由前述 先以雷射於半導體元件封膠體標定區域位置加工形成一凹 槽，使凹槽底部尚保留封膠材料，避免雷射傷害半導體元 件1曰曰片等内部構裝構造’接續於凹槽位置施以化學姓刻 =去除凹槽底部的封膠材料，使半導體元件顯露其位於 曰位置的内。p構褒構造（如：晶片、導線及導線架 件心彳較短的封膠去除作業時間，以及避免半導體元 除作：構造被損壞的高成功率方式完成半導體元件封膠去 路等L乍Γ更於後續半導體元件故障分析或修正、補加電201207913. VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for removing a sealing material of a material element, a predetermined region for removing an outer layer of a sealing material of a semiconductor element, to reveal a semiconductor element as a sealing material The method of removing the seal of the internal structure of the material coating (such as a semiconductor wafer, etc.) and the design of the laser grooving apparatus used for the method of removing the sealant. [Prior Art] • A semiconductor element such as an integrated circuit component, which is mainly formed by attaching a wafer to a carrier and a molding process such as forming a sealant-coated wafer and a carrier. In order to ensure that the completed semiconductor components have good product quality, after the assembly is completed, functional inspection operations will be performed. Once the semiconductor components of the completed components are found to be abnormal in function, in order to perform a semiconductor device with abnormal functions. General fault analysis, or correction, supplemental circuits, etc., must first remove the sealant that covers the wafer and the outside of the carrier to reveal its internal structure for subsequent fault analysis or correction procedures. The currently known encapsulation removal method adopts a complete chemical etching degumming method, that is, using an etching solution capable of chemically reacting with the encapsulant, sulphuric acid, or the like, which is applied to the outer layer of the semiconductor element by dripping or blowing. The material 7 is exposed to the outside until the semiconductor element is covered with the inside of the die or the wiring. However, the use of chemical etching means that the semiconductor element is sealed because it cannot effectively limit the chemical inverse of the sealing material of the semiconductor component and the product domain, and removes the entire thickness of the sealing material by chemical acid contact reaction. During the process of revealing the internal structure of the glue coating, 201207913 is difficult to precisely control due to the reaction time, range of action and degree of action of the chemical acid etching, so that the wafer, the metal wire or its constituent circuit and the acid contact liquid inside the semiconductor component are easily caused. The contact is too long and is damaged by erosion, and is not conducive to the successful completion of revealing the position of a part of the specified area of the internal wafer or the structure of the semiconductor element. On the other hand, because the outer layer of the semiconductor element is sealed by the resin package, the semiconductor crystal and its electrical structure The mounting structure is such that the position of its semiconductor wafer and its electrical components is not clear, especially in recent years, the packaging technology is more developed, the package size and the size of the chip are reduced, and the wafer is not necessarily placed in the semiconductor. 70 pieces,|Multi-wafers - Increased production of semiconductors in advanced packaging styles such as packaging, using chemistry The method of removing the resin encapsulation and unsealing is difficult to accurately align the semiconductor wafer, the metal lead or the structure or a part of the specified area of the area due to the inability to accurately align the target. When not exposed to an accurate position, the usual practice is Lengthen the time or concentration of the chemical acid reaction, so that the specified target is exposed, but some semiconductor wafers, metal leads or their electrical components other than the target are damaged due to excessive contact with the acid etching. θ [Invention] & One of the main purposes is to provide a two-stage sealing method for semiconductor components. The μ method has a shortcoming of the semiconductor element j, such as complete chemical chemistry, and the like. (5) Damage to the structure and operation to achieve the aforementioned invention OBJECTS OF THE INVENTION The invention relates to a method for removing a two-stage sealant of the present invention, comprising: a step of guiding one of the 70 pieces of the laser plus the engineering bottom, and a step of: removing the area of the sealant by a laser processing means according to the semiconductor component sealant. 201207913 The step of forming a groove at the size and position of the calibrated area, the groove depth is not within the semiconductor component The wafer, the bottom of the groove still retains the glue material; # A chemical etching process uses an etching solution to chemically etch the sealing body of the semiconductor element having the groove formed, so that the calibration area of the semiconductor element reveals the internal structure The method for removing the two-stage sealing of the semiconductor component of the present invention is formed by forming a groove by laser at the calibration area of the sealing component of the semiconductor component, so that the sealing material is retained at the bottom of the groove to prevent the laser from damaging the semiconductor component. 1 internal structure such as a slab, 'continuously applied to the groove position to apply a chemical surname = remove the sealant material at the bottom of the groove, so that the semiconductor component reveals its position within the 曰 position. p-structure (eg wafer, The wire and the lead frame have a shorter core sealant removal operation time, and avoid the semiconductor element to be removed: the high-power mode of the damaged structure is completed, and the semiconductor component is sealed, etc., and the subsequent semiconductor component failure analysis or correction is performed. Add electricity
本發明之另一主in U w ^ 要目的在於提供一種雷射開槽加工裝 罝’希藉此設計以期於 + 置。 请車δ又疋雷射進行去除封膠體區域位 為達成前述主要目沾 士 裝置包八. 的’本發明所提出之雷射開槽加工 載台’其包含一且古 以；5 '、有x、y軸向位移功能的驅動器， 久—定位座，驅動器且 器可昇有一驅動端連接該定位座，驅動 」帶動定位座於載台之埜， 之第一位置與第二位置間位移； 光學成像組件，传 < 认# 係汉於載台之第一位置上方，用以 201207913 取得疋位座上半導體元件的表面形貌； 控制組件，係一具有控制、影像處理與除膠區域位 置標定功能的組件，控制組件包含一控制主機、一顯示幕 以及一輸入介面，控制主機電性連接顯示幕、輸入介面以 及光學成像組件，用以顯示半導體元件表面形貌及標定半 導體元件去除封膠體的區域位置；以及 一雷射發射器，係設於載台之第二位置上方，並受控 於控制主機，用以對半導體元件標定去除封膠體的區域位 Φ 置發射雷射光束挖洞以形成凹槽。 本發明以前述雷射開槽加工裝置設計，其特點是可供 操作者依據半導體元件封膠體表面形貌直接標定去除封膠 體之區域位置，接續控制雷射發射器自動於半導體元件封 膠體所標定的區域位置精準的進行雷射挖洞作業。 【實施方式】 關於本發明半導體元件之兩階段封膠去除方法，其係 包含一雷射加工程序以及一化學蝕刻程序，如圖1所示， •其中： 所述雷射加工程序係包含一標定開槽區域位置，以及 一以雷射加工手段依半導體元件封膠體所標定開槽區域的 大小及位置成形凹槽之步驟，所述凹槽深度未及於半導體 元件内部的晶片，凹槽底部尚保留有封膠體之材料。 前述雷射加工程序中，該標定開槽區域位置步驟可使 用光學成像組件（如：光學成像系統或立體顯微鏡裝置 等）搭配控制組件，在光源輔助照明下，於控制組件的顯 不幕上觀察半導體元件封膠體表面形貌，再於顯示幕上透 201207913 過輸入介面直制定半導體元件封膠體的開槽區域位置， 或者’亦可匯入半導體元件的構裝形貌(如：打線圖或其χ 一 ray影像）’與半導體元件實物封膠體表面形貌影像重 疊，以便於精準標定半導體元件開槽區域位置利用控制組 件的控制主機控制雷射發射器依據半導體元件封膠體所標 定開槽區域的大小及位置處掃描打擊成形凹槽。 π 前述雷射加工程序中，於進行雷射加工手段依半導體 元件封膠體所標定的開槽區域大小及位置成形凹槽之步驟 時’所述雷射加工手段選用可發射光波長1G6()~i()7()nm或 其他波長雷射光的雷射發射器，並可藉由改變雷射發射器 的雷射打擊量、頻率、次數等改變以成形適當深度的凹 槽其中，雷射發射器可透過其雷射掃描頭系統引導雷射 束打擊於標定開槽區域與位置移去封膠材料，形成凹槽。 前述雷射加工程序中，尚可包含一粉塵去除的步驟、 一冷卻降溫的步驟或其結合，其中： 所述私塵去除的步驟係進行雷射加工手段依半導體元 件封膠體所標定的開槽區域的大小及位置成形凹槽之步驟 夺、以吹虱手段喷出氮氮或空氣去除封膠體因挖洞而產生 的叙塵或者以抽氣集塵手段（如使用鼓風機搭配過滤器） :取去除封膠體因挖洞而產生的粉塵，或是以吹氣及抽氣 二塵手&同時進行粉塵去除的步驟，以減少粉塵阻撐雷射 光束。 彳述冷部降溫的步驟係進行雷射加工手段依半導體元 膠體所標定的區域的大小及位置成形凹槽之步驟時， 人入冷部ll氣的氣冷手段降低半導體元件溫度，同時形 201207913 成氣f；氣氛於半導體元件封膠體四週，避免燃燒發生。 ‘ γ述雷射加工程序中，尚可進一步包含一雷射開槽狀 …示步冑4雷射開槽狀態顯示步驟係於雷射發射器發 出雷射打擊半導體兀件封膠體的同時或停止間隙時間，利 用另-光學成像組件於顯示幕上呈現封膠體被挖洞的區域 -IM立的形貌變化，提供操作者判斷是n續雷射對半導體 元件封膠體的挖洞或停止。Another main in U w ^ of the present invention is to provide a laser grooving apparatus which is designed to be placed in a desired manner. Please take the δ and 疋 laser to remove the sealant area to achieve the above-mentioned main target smashing device package. The 'laser grooving processing stage proposed by the present invention' contains one and the ancient; 5 ', there is The driver of the x, y axial displacement function, the long-positioning seat, the driver and the device can be lifted with a driving end connected to the positioning seat, and the driving device drives the positioning seat to shift between the first position and the second position in the field of the loading platform; The optical imaging component is transmitted above the first position of the stage for 201207913 to obtain the surface topography of the semiconductor component on the clamping seat; the control component has a position of control, image processing and degreasing area The component of the calibration function comprises a control host, a display screen and an input interface. The control host electrically connects the display screen, the input interface and the optical imaging component to display the surface topography of the semiconductor component and to calibrate the semiconductor component to remove the sealant. a regional position; and a laser emitter disposed above the second position of the stage and controlled by the control unit for calibrating the semiconductor component Bit encapsulant region of the laser beam emitted digging Φ set to form a groove. The invention adopts the foregoing laser grooving processing device design, and is characterized in that the operator can directly calibrate the position of the sealing body according to the surface morphology of the semiconductor component sealing body, and continuously control the laser emitter to be automatically calibrated on the semiconductor component sealing body. The location of the area is precise for laser burrowing operations. [Embodiment] A two-stage sealing method for removing a semiconductor device according to the present invention includes a laser processing program and a chemical etching program, as shown in FIG. 1, wherein: the laser processing program includes a calibration The position of the grooved area, and a step of forming a groove by laser processing according to the size and position of the grooved area of the semiconductor component sealant, the groove depth is not below the wafer inside the semiconductor component, and the bottom of the groove is still The material retaining the sealant. In the foregoing laser processing program, the step of calibrating the grooved area may be performed by using an optical imaging component (such as an optical imaging system or a stereoscopic microscope device) with a control component, and under the auxiliary illumination of the light source, observing the control component The surface morphology of the semiconductor component encapsulant is further formed on the display screen through the input interface to directly define the position of the slotted region of the semiconductor component encapsulant, or 'can also be incorporated into the structure of the semiconductor component (eg, wire drawing or χ a ray image) 'overlaps with the surface image of the physical component seal of the semiconductor component, so as to accurately calibrate the position of the slotted area of the semiconductor component. The control host of the control component controls the laser emitter according to the slotted area of the semiconductor component sealant. Scan the shaped groove at the size and position. π In the above laser processing program, when the laser processing method is performed according to the size of the grooved area and the position of the groove formed by the semiconductor component sealant, the laser processing means selects the wavelength of the emitted light 1G6()~ a laser emitter of i()7() nm or other wavelengths of laser light, and can be modified by changing the laser strike amount, frequency, number of times, etc. of the laser emitter to form a groove of appropriate depth, laser emission The laser scanning head system can be used to guide the laser beam against the calibration slotted area and position to remove the sealing material to form a groove. In the foregoing laser processing program, a dust removal step, a cooling and cooling step, or a combination thereof may be included, wherein: the private dust removal step is performed by a laser processing method according to a semiconductor component sealant. The size and position of the area to form the groove step, blowing nitrogen or nitrogen by blowing means to remove the dust generated by the boring of the sealant or by means of air collection and dust collection (such as using a blower with a filter): Remove the dust generated by the burrowing of the sealant, or perform the dust removal step by blowing and pumping the dust and the dust to reduce the dust. The step of cooling the cold part is to perform the step of forming the groove by the laser processing means according to the size and position of the area marked by the semiconductor element colloid, and the air cooling means for the person to enter the cold part reduces the temperature of the semiconductor element, and the shape 201207913 The gas is formed into an atmosphere around the sealing member of the semiconductor element to prevent combustion from occurring. In the gamma laser processing program, a laser slotted shape may be further included. The step of displaying the laser slotted state is performed while the laser emitter emits a laser to strike the semiconductor component sealant or stops. The gap time, using the other-optical imaging component on the display screen to present the immersed area of the sealant-IM vertical shape change, provides the operator with the judgment that the laser continues to dig or stop the semiconductor component sealant.
上述化學钱刻程序係使用钱刻液對半導體元件的封膠 體使用雷射開槽c贿ave抽工後形成的凹槽來進行 化學㈣反應，使其半導體元件指定區域顯露出晶片、金 屬導料㈣構裝構造，其中，可則㈣料或喷吹钱刻 液(如硝酸⑽nc acid，⑽〇3))、發煙硝酸(nitdc ， fumnig，（Η_)、硫酸（sulfudc add，（H2S〇4))或其混合 酸液…）之方式來施加於半導體元件封膠體之凹槽處，以去 除半導體it件封膝體已經形成凹槽底部之封膠材料，而顯 露出包含晶片（chip)、今屈道綠. 金屬導線（wire bond)、導線架（iead frame)等之内部構裝構造。 上述化學钮刻程序中，可將已使用雷射開槽加工後形 成凹槽之半導體元件封膠體置於加熱源上方，使其受熱至 一定溫度（約3G〜9Gt)’再將㈣液以滴落或喷吹的方式置 ，於凹槽中，使其㈣凹槽内封勝㈣，以顯露出半導體 疋件之晶片、導線及導線架等内部構造。 待敍刻完成後’可再進一步進行清淨步驟，所述清淨 步驟可先以丙酮（acetone，（CH3C〇CH3))沖洗半導體元件封 膠體凹槽内殘留_液，沖洗完㈣，將半導艘元件封 201207913 夥體置入裝有乙二胺（ethylenediamine， （c2h4(nh〇2))溶液 的容器内，並將此容器置於超音波震盪器中，以超音波震 盪，做為清潔表面之處理，再將半導體元件封膠體由裝有 乙二胺（ethylenediamine (C2H4(NH〇2)溶液的容器中取出，移 置裝有清潔液的容器中，並將此容器置於超音波震盪器 中，以超音波震盪，做為二次清潔表面之處理。取出半導 體疋件封膠體，以丙酮（acetoneK^COCH3))沖洗後，以含有 氮氣（NO的喷氣裝置將半導體元件封膠體吹乾，再以光學成 像組件（如：光學成像系統、立體顯微鏡裝置…等）檢視半導 體元件封膠體凹槽區域底部的晶片（cMp)、金屬導線㈤^ bond)、導線架（lead frame)等内部構裝構造上的封膠材料是 否去除，以及表面是否乾淨無任何的雜質、灰塵；若尚有 :膠材料殘留，則可以使用人工手動方式，重複上述方式 去除殘留的封膠材料。 本發明半導體元件之兩階段封膠去除方法，藉由前述 以雷射於半導體元件封膠體標定區域位置加工形成一凹 凹槽底部尚保留封膠材料’避免雷射傷害半導體元 風^片、導線等内部構裝構造，接續於凹槽位置施以化 :於手段去除凹槽底部的封膠材料，使半導體元件顯露 的封膠置的晶片、導線等内部構裝構造，故可較短 壞的：成力^業時間’以及避免半導體元件内部構造被損 後續式完成半導體元件封膠去除作業，以便於 ①件故障分析或修正、補加電路等等作業。 基於前料導體元件之兩階段封膠執 射加工程序的需求，本發明尚設計有—雷射開槽力 = 201207913 置，如圖2、圖3所示 該雷射開槽加工裝置主要係包含一 載台1、一光學成像組件2、 器4，其中： 一控制組件3以及— 雷射發射 該載台1包含一驅動器10以及一定位座丨丨，定位座 11係用以提供半導體元件定位其上’驅動器可為一具有 X軸向與y轴向位移的驅動機構，或進—步具有旋轉機 構’並以其驅動端連接定位座11，使驅動器可帶動定位 座於載台1之第一位置1A與第二位置1B間位移，或進一 步帶動定位座11旋轉，而改變定位座u上的半導體元件 的位置及旋轉調整角度位置。 該光學成像組件2係設置載台丨之第一位置1A上方 並具有光源20提供照明，用以取得定位座丨丨上半導體元 件的表面形貌，所述光學成像組件可為數位式光學成像系 統或立體顯微鏡裝置等，其中包含可變換倍率、調焦功能 之透鏡組與CIS或CCD攝影機等。The above chemical money engraving process uses a money engraving liquid to perform a chemical (four) reaction on a sealing body of a semiconductor component using a laser groove to form a groove formed by a laser squeegee to expose a wafer, a metal guide material in a designated region of the semiconductor device. (4) The structure of the structure, wherein, in the case of (4) materials or injection of money engraving (such as nitric acid (10) nc acid, (10) 〇 3), fuming nitric acid (nitdc, fumnig, (Η_), sulfuric acid (sulfudc add, (H2S〇4) )) or a mixed acid solution thereof) is applied to the recess of the semiconductor component encapsulant to remove the sealing material of the bottom portion of the semiconductor in which the semiconductor body has formed the recess, thereby revealing the chip, Now Qudao Green. Internal structure of wire bond, iead frame, etc. In the above chemical button carving process, the semiconductor component encapsulant which has been grooved by using the laser grooving process can be placed above the heating source to be heated to a certain temperature (about 3G~9Gt), and then the (four) liquid is dripped. The method of falling or blowing is placed in the groove so that the (4) groove is sealed (4) to reveal the internal structure of the wafer, the wire and the lead frame of the semiconductor element. After the completion of the engraving, the cleaning step can be further performed. The cleaning step can first rinse the residual liquid in the groove of the semiconductor component sealant with acetone ((CH3C〇CH3)), rinse (4), and semi-guide the vessel. Component seal 201207913 The body is placed in a container containing ethylenediamine (c2h4 (nh〇2)) solution, and the container is placed in an ultrasonic oscillator, which is ultrasonically oscillated as a clean surface. After processing, the semiconductor component sealant is taken out from a container containing ethylenediamine (C2H4 (NH〇2) solution, displaced in a container containing a cleaning liquid, and the container is placed in an ultrasonic oscillator. Ultrasonic vibration is used as a secondary cleaning surface. The semiconductor component sealant is taken out and rinsed with acetone (acetone K^COCH3), and the semiconductor component sealant is blown dry with a nitrogen-containing (NO-jet device). Viewing the wafer (cMp), metal wire (5), and lead frame at the bottom of the recessed region of the semiconductor device encapsulant with an optical imaging component (eg, an optical imaging system, a stereoscopic microscope device, etc.) Whether the sealing material on the internal structure is removed, and whether the surface is clean without any impurities or dust; if there is still: the glue material remains, the residual sealing material can be removed by manual manual method. The two-stage sealing method for removing the semiconductor component is processed by forming a concave groove at the bottom of the calibration area of the semiconductor component sealing body, and retaining the sealing material to prevent laser damage to the internal structure of the semiconductor element, the wire, and the like. The mounting structure is successively applied to the position of the groove: the means for removing the sealing material at the bottom of the groove, and the internal structure of the wafer, the wire, etc., which are exposed by the semiconductor element, so that it can be shorter and weaker: ^Industry time' and avoiding the internal structure of the semiconductor component is damaged to complete the semiconductor component sealing removal operation, so as to facilitate one fault analysis or correction, supplemental circuit, etc. Two-stage sealing injection based on the front conductor component The requirements of the processing program, the invention is also designed - the laser grooving force = 201207913, as shown in Figure 2, Figure 3 The processing device mainly comprises a stage 1, an optical imaging unit 2, and a device 4, wherein: a control unit 3 and a laser emission unit 1 includes a driver 10 and a positioning seat, and the positioning seat 11 is used. In order to provide a semiconductor component positioning, the 'driver can be a drive mechanism having X-axis and y-axis displacement, or the drive mechanism has a rotation mechanism' and the drive end is connected to the positioning seat 11, so that the driver can drive the positioning seat Displacement between the first position 1A and the second position 1B of the stage 1, or further driving the positioning seat 11 to rotate, and changing the position of the semiconductor component on the positioning seat u and the rotational adjustment angular position. The optical imaging assembly 2 is provided with a stage The first position 1A is disposed above and has a light source 20 for providing illumination for obtaining a surface topography of the semiconductor component on the positioning pad. The optical imaging component may be a digital optical imaging system or a stereo microscope device, etc. A lens group that converts magnification and focusing functions, and a CIS or CCD camera.
該控制組件包含一控制主機30、一顯示幕31以及一輸 入介面32 (如：滑鼠或鍵盤…），所述控制主機3〇至j 内建有控制程式、影像處理程式以及開槽區域位置標定程 式等，控制主機30電性連接顯示幕31、輸入介面32以及 光學成像組件2，使光學成像組件2所取得定位座丨丨上半 導體兀件的表面形貌的數位資料可傳輸至控制主機中，並 於顯示幕31的畫面中呈現半導體元件的表面形貌，所述顯 二幕31可為般液晶顯示器，操作者利用觀察顯示器上半 導體元件的表面形貌後’透過輸入介s 32(如:滑鼠或鍵 盤……）於顯示幕上直接標定半導體元件開槽的區域，此 201207913 外’控制主機30亦可匯入（透過USB等電腦部件）半導 體元件的構裝形貌（如：打線圖或其x-ray影像），透過控 制程式以及影像處理程式處理後與半導體元件實物封膠體 表面形貌影像重疊，以便於精準標定半導體元件開槽區域 位置。 該雷射發射器4係設於載台1之第二位置iB上方，並 受控於控制主機30，用以對半導體元件標定開槽區域位置 發射雷射光束挖洞以形成凹槽。 如圖4所示，本發明雷射開槽加工裝置除包含前述的 載台1、光學成像組件2、控制組件3以及雷射發射器4 外，尚可進一步包含一粉塵去除組件6、一冷卻組件7或其 結合，其中： 所述粉塵去除組件6可為一環形罩6〇與一抽氣集塵組 件61之組合，該抽氣集塵組件61具有一鼓風抽氣機62、 一粉塵過濾裝置63以及連接鼓風機62、粉塵過濾裝置63 的抽氣管件64’該環形罩6〇係固定於載台1上，其中環形 罩60可藉由定位帛66固定於載纟1且位於雷射發射器4 下方不酼疋位座11移動，抽氣集塵組件61以其抽氣管 件64之吸氣端位於環形罩6〇側邊，用以吸入粉塵後，經 由粉塵過滤裝置63㈣，並使抽氣管件64的排氣端接到 廠務排風櫃排出。 所述的泰塵去除組件6可為一吹氣喷頭組件Μ，所述 吹氣喷頭組件65設置於裁台i上且位於雷射發射器4下 方’或者’吹氣喷頭組件65亦可結合—環形罩6() 一起使 用’環形罩60可藉由定位架66固定於載台】上且位於雷 201207913 射發射器4下方，吹氣噴頭組件65出氣端設於環形罩6〇 側邊，所述吹氣喷頭組件65之進氣端可以連接到一般的空 壓機提供進氣壓力，藉以利用吹氣減少粉塵覆蓋在半導= 元件8封膠體上面’以減少粉塵阻擋雷射光束。 所述的粉塵去除組件6也可為一環形罩6〇、一抽氣集 塵組件61以及一吹氣喷頭組件65之組合，該環形罩6〇係 固定於載台1上，其中環形罩60可藉由定位架66固定於 載台1上且位於雷射發射器4下方，不隨定位座丨丨移動； φ該抽氣集塵組件61具有-鼓風抽氣機62、一粉塵過渡裝置 63以及連接鼓風機62、粉塵過濾裝置63的抽氣管件64， 抽氣集塵組件61以其抽氣管件64之吸氣端位於環形罩6〇 侧邊，用以吸入粉塵後，經由粉塵過濾裝置63過濾，並使 抽氣管件64的排氣端接到廠務排風櫃排出；該吹氣喷頭組 件65出氣端設於環形罩60側邊，所述吹氣噴頭組件65之 進氣端可以連接到一般的空壓機提供進氣壓力，藉以利用 吹氣減少粉塵覆蓋在半導體元件8封膠體上面，以減少粉 # 塵阻擋雷射光束。 本發明雷射開槽加工裝置尚可包含一環形罩6〇及一冷 卻組件7，該環形罩60係固定於載台}上，其中環形罩6〇 可藉由定位架66固定於載台1上且位於雷射發射器4下 方’不隨定位座11移動；該冷卻組件7進氣端由外部提供 冷卻的氮氣，出氣端於環形罩6〇側邊，用以吹入冷冷卻的 氮氣，並形成氮氣氣氛於半導體元件封膠體四週，用以對 雷射去除封膠體的+導體元件提供降溫冷卻U氣氣氛環 蜓，避免燃燒發生；所述冷卻組件7亦可結合前述粉塵去 ΙΪ 12 201207913 除組件6 —同使用，其中共用一環形罩60,讓本發明雷射 開槽加工裝置兼具粉塵去除、冷卻及避免燃燒等多重功 能0 如圖4所示’本發明雷射開槽加工裝置也可再包含一The control component includes a control host 30, a display screen 31, and an input interface 32 (such as a mouse or a keyboard...). The control host 3〇 to j has built-in control programs, image processing programs, and slotted area positions. The calibration host and the like, the control host 30 is electrically connected to the display screen 31, the input interface 32 and the optical imaging component 2, so that the digital data of the surface topography of the semiconductor component on the positioning seat obtained by the optical imaging component 2 can be transmitted to the control host. The surface topography of the semiconductor component is presented in the screen of the display screen 31. The display screen 31 can be a liquid crystal display, and the operator uses the surface topography of the semiconductor component on the display to pass through the input interface s 32 ( Such as: mouse or keyboard......) directly calibrate the slotted area of the semiconductor component on the display screen. The 201207913 external 'control host 30 can also import (through USB and other computer components) the structure of the semiconductor components (such as: The wire diagram or its x-ray image is processed by the control program and the image processing program to overlap with the surface topography image of the physical component of the semiconductor component for precision Calibrate the location of the slotted area of the semiconductor component. The laser emitter 4 is disposed above the second position iB of the stage 1 and is controlled by the control unit 30 for calibrating the position of the slotted region of the semiconductor component to emit a laser beam to form a recess. As shown in FIG. 4, the laser grooving apparatus of the present invention may further comprise a dust removing component 6 and a cooling, in addition to the aforementioned stage 1, optical imaging unit 2, control unit 3 and laser emitter 4. The assembly 7 or a combination thereof, wherein: the dust removal assembly 6 can be a combination of an annular cover 6 〇 and an air collection dust assembly 61, the air collection dust assembly 61 having a blast air extractor 62, a dust The filter device 63 and the exhaust pipe member 64' connecting the blower 62 and the dust filter device 63 are fixed to the stage 1 by the annular cover 6, wherein the annular cover 60 can be fixed to the carrier 1 by the positioning cymbal 66 and located at the laser The lower portion of the radiator 4 is moved below the emitter 4, and the suction and dust collecting unit 61 is located at the side of the annular cover 6〇 with the suction end of the suction pipe member 64 for sucking the dust, and then passing through the dust filtering device 63 (4). The exhaust end of the suction pipe member 64 is discharged to the factory exhaust cabinet. The Thai dust removing component 6 can be an air blowing nozzle assembly 设置 disposed on the cutting table i and located under the laser emitter 4 or the air blowing nozzle assembly 65 The annular cover 6 can be used together with the 'annular cover 60 can be fixed to the stage by the positioning frame 66' and located under the Ray 201207913 emitter 4, and the outlet end of the blow nozzle assembly 65 is disposed on the side of the annular cover 6 The air inlet end of the air blowing nozzle assembly 65 can be connected to a general air compressor to provide intake pressure, thereby reducing dust coverage on the semi-conductor element 8 by using air blowing to reduce dust-blocking laser. beam. The dust removing assembly 6 can also be a combination of an annular cover 6〇, an air collection dust assembly 61 and a blowing nozzle assembly 65, the annular cover 6 being fixed to the carrier 1 with a ring cover. 60 can be fixed on the stage 1 by the positioning frame 66 and under the laser emitter 4, and does not move with the positioning seat; φ the air collection dust assembly 61 has a blast air extractor 62 and a dust transition The device 63 and the air suction pipe member 64 connecting the air blower 62 and the dust filter device 63, the air suction dust collector assembly 61 is located at the side of the annular cover 6〇 with the suction end of the air suction pipe member 64 for sucking dust and filtering through the dust. The device 63 filters and discharges the exhaust end of the air suction pipe member 64 to the factory exhaust cabinet; the air outlet end of the air blowing nozzle assembly 65 is disposed at the side of the annular cover 60, and the air inlet of the air blowing nozzle assembly 65 The end can be connected to a general air compressor to provide intake pressure, thereby utilizing blowing to reduce dust covering the sealing member of the semiconductor component 8 to reduce the powder # dust blocking laser beam. The laser grooving apparatus of the present invention may further include an annular cover 6 〇 and a cooling assembly 7 fixed to the stage, wherein the annular cover 6 固定 can be fixed to the stage 1 by the positioning frame 66 Above and below the laser emitter 4, it does not move with the positioning seat 11; the cooling end of the cooling assembly 7 is supplied with cooled nitrogen gas from the outside, and the outlet end is on the side of the annular cover 6 for blowing cold cooled nitrogen gas. And forming a nitrogen atmosphere around the semiconductor component encapsulant for providing a cooling and cooling U gas atmosphere ring for the + conductor component of the laser removal encapsulant to prevent combustion from occurring; the cooling component 7 can also be combined with the dust to remove the crucible 12 201207913 In addition to the assembly 6, the same use, in which a ring cover 60 is shared, the laser grooving device of the present invention has multiple functions of dust removal, cooling and combustion avoidance, as shown in Fig. 4, the laser grooving processing device of the present invention. Can also include one more
輔助光學成像組件5 ’所述辅助光學成像組件5可單獨應用 於載台1上’也可結合前述的粉塵去除組件6、冷卻組件7 或其結合一同使用。所述輔助光學成像組件5係設置於載 台1之第二位置1B上方，且位於雷射發射器4側邊以及具 有光源50提供照明，並電連接控制主機3〇，用以取得半導 體元件於雷射成形之凹槽處的表面形貌，並於顯示幕31的 畫面上呈現，所述辅助光學成像組件5可為數位式光學成 像系統或立體顯微鏡裝置等，用以在雷射發射器4發出雷 射打擊半導體元件封膠體的同時或停止間隙時間，利用該 輔助光學成像組件5取得半導體元件封膠體被挖洞的區域 部位的形貌而呈現於顯示幕31 ±，提供操作者判斷是否繼 續雷射對半導體元件封膠體的挖洞或停止。 本發明雷射開槽加工裝置應用於半導體元件之兩階段 封膠去除方法之雷射加工程序時’如^ 5或圖7所示，可 將半導體元件8放置定位座定位，利用光學成像組件之取 得半導體元件8的表面形貌呈現顯示幕31的晝面中，以輸 入介面標定半導體元件8去除封膠體的區域位置後，如圖： 或圖8所示，令原位於載台！第—位置以的定位座^及 其上的半導體元件8移動至載台1的 叼弟一位置1B，接續由 控制主機30令雷射發射器4對丰练驴 件8標定去除封膠 體的區域位置發出雷射進行挖洞。 13 201207913 如圖8所示，於雷射挖洞過程中，本發明雷射開槽加 工裝置尚可進一步利用粉塵去除組件61以抽氣集塵手段收 集封膠體因挖洞而產生的粉塵，同時利用吹氣喷頭組件65 吹氣以減少粉塵覆蓋在封膠體上面’以減少粉塵阻擋雷射 光束，另由冷卻組件7吹送冷的氮氣提供降溫冷卻功用及 形成氮氣氣氣環境’使半導體元件8去除封膠體之作業可 以順利且精準的進行。 如圖8所示’於雷射發射器4對半導體元件8標定去 0^ 除封膠體的區域位置發出雷射進行挖洞的過程中，尚可利 用該辅助光學成像組件5取得半導體元件8封膠體被挖洞 的區域部位的形貌而呈現於顯示幕31上，提供操作者判斷 是否繼續雷射對半導體元件8封膠體的挖洞或停止，藉以 精準控制半導體元件8封膠體所雷射挖洞的凹槽深度以 避免半導體元件8凹槽處的晶片、導線及導線架等内部構 裝構造為雷射所損傷。 【圖式簡單說明】 ^ 圖1是本發明半導體元件之兩階段封膠去除方法之流 程示意圖。 圖2是本發明雷射開槽加工裝置之第一較佳實施例的 示意圖。 圖3是圖2所示雷射開槽加工裝置第一較佳實施例的 另一示意圖。 圖4是本發明雷射開槽加工裝置第二較佳實施例的平 面示意圖。 圖5是圖2所示雷射開槽加工裝置第一較佳實施例於 14 201207913 '半導體元件封膠體標定開槽區域步驟的操作示意圖β 圖6是圖2所示雷射開槽加工裝置第一較佳實施例於 半導體7C件封膠體上雷射開槽步驟的操作示意圖 是圖4所示雷射開槽加工裝置第二較佳實施例於 半導體X件封膠體標定開槽區域步驟的操作示意圖。 是圖4所示雷射開槽加工裝置第二較佳實施例於 丰導體疋件封膠體上雷射開槽步驟的操作示意圖。 【主要元件符號說明】 1載台 10驅動器 11 定位座 1A第一位置 1B 第二位置 2光學成像組件 20 光源 3控制組件 30控制主機 31 顯示幕 32輸入介面 4雷射發射器 5輔助光學成像組件 50 光源 6粉塵去除組件 60 環形罩 61抽氣集塵組件 62 鼓風抽氣機| 63粉塵過濾裝置 64 抽氣管件 65吹氣喷頭組件 66 定位架 冷卻組件 8半導體元件 15The auxiliary optical imaging assembly 5' can be used separately on the stage 1' or it can be used in conjunction with the aforementioned dust removal assembly 6, cooling assembly 7, or a combination thereof. The auxiliary optical imaging component 5 is disposed above the second position 1B of the stage 1 and is located at the side of the laser emitter 4 and has a light source 50 for providing illumination, and is electrically connected to the control host 3A for obtaining the semiconductor component. The surface topography at the groove of the laser forming is presented on the screen of the display screen 31, which may be a digital optical imaging system or a stereoscopic microscope device or the like for use in the laser emitter 4 When the laser strikes the semiconductor component sealant or stops the gap time, the auxiliary optical imaging component 5 obtains the topography of the region where the semiconductor component sealant is burrowed and presents it on the display screen 31±, providing the operator to determine whether to continue The laser digs or stops the semiconductor component sealant. When the laser grooving processing device of the present invention is applied to a laser processing program of a two-stage encapsulation removal method for a semiconductor device, as shown in FIG. 5 or FIG. 7, the semiconductor component 8 can be placed in a positioning seat, and the optical imaging component can be used. Obtaining the surface topography of the semiconductor device 8 in the face of the display screen 31, after the input interface is used to calibrate the position of the semiconductor element 8 to remove the sealant, as shown in FIG. 8 or FIG. 8, the original is placed on the stage! The positioning seat of the first position and the semiconductor component 8 thereon are moved to the position 1B of the stage 1 of the stage 1, and then the control unit 30 causes the laser emitter 4 to calibrate the area of the sealing element 8 to remove the sealing body. The location emits a laser to dig holes. 13 201207913 As shown in FIG. 8 , in the laser boring process, the laser grooving apparatus of the present invention can further utilize the dust removing component 61 to collect the dust generated by the burrowing of the sealing body by means of air collection and dust collection, and simultaneously The blowing nozzle assembly 65 is used to blow the air to reduce the dust covering the sealing body to reduce the dust to block the laser beam, and the cooling unit 7 blows the cold nitrogen to provide the cooling and cooling function and the nitrogen gas atmosphere to form the semiconductor component 8 The operation of removing the sealant can be carried out smoothly and accurately. As shown in FIG. 8 , in the process of laser burrowing the laser device 4 to calibrate the semiconductor device 8 to the position of the sealing layer, the auxiliary optical imaging component 5 can be used to obtain the semiconductor component 8 The surface of the region where the colloid is burrowed is presented on the display screen 31, and the operator is provided to judge whether to continue the tunneling or stopping of the sealing member of the semiconductor component 8 by the laser, thereby precisely controlling the laser excavation of the sealing member of the semiconductor component 8 The groove depth of the hole prevents the internal structure of the wafer, the wire and the lead frame at the groove of the semiconductor element 8 from being damaged by the laser. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing a two-stage sealing method for removing a semiconductor device of the present invention. Figure 2 is a schematic illustration of a first preferred embodiment of the laser grooving apparatus of the present invention. Figure 3 is another schematic view of the first preferred embodiment of the laser grooving apparatus of Figure 2; Figure 4 is a plan view showing a second preferred embodiment of the laser grooving apparatus of the present invention. Figure 5 is a schematic view showing the operation of the first embodiment of the laser grooving apparatus shown in Figure 2 at 14 201207913 'Semiconductor component encapsulant calibration slotting area. Fig. 6 is the laser grooving apparatus shown in Fig. 2. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 4 is a schematic view showing the operation of the laser grooving step on the semiconductor 7C device sealing body. The second preferred embodiment of the laser grooving processing device shown in FIG. 4 is operated in the step of calibrating the slotted region of the semiconductor X-piece encapsulant. schematic diagram. Fig. 4 is a schematic view showing the operation of the laser grooving step on the sealing member of the second embodiment of the laser grooving apparatus shown in Fig. 4. [Main component symbol description] 1 stage 10 driver 11 positioning seat 1A first position 1B second position 2 optical imaging assembly 20 light source 3 control assembly 30 control host 31 display screen 32 input interface 4 laser emitter 5 auxiliary optical imaging assembly 50 Light source 6 Dust removal assembly 60 Ring cover 61 Air collection dust assembly 62 Blowing air extractor | 63 Dust filter device 64 Evacuation pipe fitting 65 Blowing head assembly 66 Positioning frame cooling assembly 8 Semiconductor component 15