201126234 六、發明說明： 【發明所屬之技術領域】 本發明係關於 MVA ( Multi-domain Vertical A1 i g nment )方式之液晶面板的製造方法，尤其是關於在兩張 玻璃基板之間，封入混合具有藉由施加電壓而配向之配向 性的液晶與對紫外線反應而產生聚合的光學活性物質之材 料，利用對此液晶面板照射紫外線而使紫外線反應材料聚 合，將配向膜形成於玻璃板上之液晶面板的製造裝置者。 【先前技術】 於圖12揭示液晶面板的構成例。液晶面板50係在兩張 透光性基板（第1玻璃基板5 1，第2玻璃基板5 2 )之間封入 液晶5 8的構造，於第1玻璃基板5 1上形成多數主動元件（ 例如，薄膜電晶體：TFT53 )與液晶驅動用電極54 (透明 電極（ITO ))，於其之上形成配向膜5 6。於第2玻璃基板 5 2係形成彩色濾光片5 7、配向膜5 6、然後是透明電極（ ITO ) 5 5。然後，於兩玻璃基板5 1、5 2的配向膜之間封入 液晶58，以密封劑59封止周圍。 於此種構造的液晶面板中，配向膜56係於電極54、55 之間施加電壓而用以控制使液晶配向的液晶配向者。先前 ，配向膜的控制係藉由摩擦（rubbing)來進行，但是，近 年來，嘗試新的配向控制技術。 其係於設置TFT元件53的第1玻璃基板51與相對於該當 第1玻璃基板51的第2玻璃基板52之間，封入混合具有藉由 201126234 施加電壓而配向之配向性的液晶58與對紫外線反應而產生 聚合的光學活性物質（紫外線反應材料，以下有單稱爲單 體（monomer)之狀況）的材料，一邊對此液晶面板施加 電壓，一邊照射紫外線而使紫外線反應材料（單體）聚合 ，與玻璃基板51、52經由配向膜56等相接之液晶（亦即， 表層的大略1分子層）的配向，藉此，對液晶賦予預傾角 (例如專利文獻1 )。 依據此方法’因爲不需要先前爲了賦予預傾角所需之 具有斜面的突起物’故可簡略化液晶面板的製造工程。所 以，可削減液晶面板的製造成本及製造時間之同時，因爲 沒有前述突起物的影子，故可改善數値口徑，也有可帶來 背光的省電力化之優點。 於進行此新的配向控制之液晶面板的製造技術中，關 於對混合液晶與紫外線反應材料的材料（以下有稱爲包含 紫外線反應材料的液晶之狀況）照射紫外線的處理方法， 有幾種提案。 於專利文獻2所記載之「液晶顯示元件裝置及其製造 方法j中，提案有將第1條件的紫外線照射，與聚合速度 大於第1條件的紫外線照射之第2條件的紫外線照射，依此 順序組合來進行之液晶顯示裝置的製造方法（參照段落 0012等的記載）。具體來說’放射照度與積算強度以第2 條件大於第1條件的條件來進行紫外線照射。 如此一來，在第1條件的紫外線照射中，因爲是比較 緩和的聚合，故可抑制配向異常的發生，之後，即使提高 -6- 201126234 聚合速度，也可沒有問題地取得沒有配向異常或被抑制之 液晶層。又，記載有在第2條件的紫外線照射中，提升3 i 〇 nm附近之低波長成分的比例爲佳（參照段落0037的記載等 )° 於專利文獻3所記載之「液晶顯示元件裝置及其製造 方法」中’揭示「已知對於爲了不使液晶劣化，照射使用 濾光片裁除未滿310 nm之短波長區域的紫外線較佳。」， 「但是’如果使波長310 nm之強度完全變成〇的話，會難 以取得所希望之液晶配向。爲此，波長3 1 0 n m之強度係利 用包含0.02〜0.05 mW/cm2程度的光源爲佳。」（參照段 落0019等的記載）的見解。 於專利文獻4所記載之「液晶顯示元件裝置及其製造 方法」中，記載較短波長之紫外線在短時間中取得液晶的 垂直配向性較爲有利，但是，容易促進液晶分子等的變質 ，較長波長的紫外線係相反地，較難以促進液晶分子等的 變質’但是’取得液晶的垂直配向性需要長時間（參照段 落003 1等的記載）’揭示了照射之紫外線的波長範圍。但 是’在專利文獻4中，並未揭示彩色濾光片的溫度上升。 [先前技術文獻] [專利文獻] [專利文獻1]日本特開2003-177408號公報 [專利文獻2]日本特開2〇〇5_181582號公報 [專利文獻3]日本特開2005_3 3 86 1 3號公報 201126234 [專利文獻4]日本特開2 006-58755號公報 【發明內容】 [發明所欲解決之課題] 如上述般’關於對混合液晶與紫外線反應材料的材料 照射從紫外線光源放出之紫外線的處理方法，已有幾種提 案’但是’本發明者進行各種實驗及檢討之結果，也取得 以下見解。 於使用前述之新的配向控制的液晶面板中，於液晶混 合對紫外線反應而產生聚合之紫外線反應材料，藉由紫外 線照射，使此紫外線反應材料聚合。 在此，對於液晶面板照射紫外線時，如圖1 2所示般， 從在與形成彩色濾光片57之第2玻璃基板52的對向側之第1 玻璃基板5 1側’照射紫外線。所以，從紫外線光源放出的 光之中’包含有彩色濾光片5*7所吸收之波長區域的波長之 光時，彩色濾光片57會被加熱。 彩色濾光片57被加熱時，熱從被加熱之彩色濾光片57 被傳導至封入於玻璃基板5 1、52之間的液晶58及紫外線反 應材料’造成該等也被加熱。藉此，產生紫外線反應材料 的溫度分布，產生該當紫外線反應材料的聚合反應（硬化 反應）速度分布，聚合率（硬化率）會產生偏差。結果， 預傾角產生偏差，而產生液晶顯示不均。又，被加熱之液 晶5 8的溫度成爲高溫的話，也擔心會有液晶的變質。 所以，從紫外線光源放出之紫外線照射中，爲了降低 -8- 201126234 預傾角的偏差，液晶面板整體的溫度分布係均一爲佳。此 時’液晶的溫度也不成爲局溫爲佳。爲此，紫外線照射中 ，以冷卻放置液晶面板的平台（例如水冷），液晶面板整 體成爲均一之溫度分布之方式控制。 但是’液晶面板近年來大型化（例如，2 m X 2 m或其以 上），同時，放置液晶面板的平台也大型化。因爲加熱而 液晶面板的溫度升高時，對於爲了降低其溫度來說需要大 型的冷卻器，裝置的成本會變高。又，溫度升高時，會難 以以前述之使大面積的溫度分布成爲均一之方式控制。 又’於照射中溫度上升時，被照射光之側的透光性基 板（第1玻璃基板5 1 )有因爲熱膨脹而延伸，液晶面板變 形，成爲不良的原因之狀況。 如此’於液晶混合紫外線反應材料，對此照射紫外線 而產生聚合反應，’使用前述之新的配向控制的液晶面板製 造中，先前並未有將紫外線反應材料的反應與彩色據光片 的光吸收所致之問題’以波長區域來進行比較並加以論述 者。 本發明係有鑒於前述情況所發明者，本發明的目的係 提供在用以使紫外線反應材料聚合（硬化）的光照射中， 盡量不使液晶面板的溫度上升之液晶面板的製造裝置。 [用以解決課題之手段] 發明者們致力硏究的結果，得出以下見解。 首先’針對混合於現在一般使用之液晶的紫外線反應 -9- 201126234 材料（單體），測定對於光的波長之吸光度。圖1揭示其 結果，對於光的波長之紫外線反應材料的吸光度之圖表。 於同圖中，橫軸是波長（nm )，縱軸是透射率（％ )。 如同圖所示般，紫外線反應材料係特別是在370 nm以 下的區域中吸收光，亦即，紫外線反應材料產生聚合反應 。然而，實際上，可知全面性有助於聚合反應的是波長 360 nm以下的光，波長比波長360 nm長的光明顯地對聚合 反應的助益較小。 在此，於圖2揭示彩色濾光片的分光特性（SCHOTT集 團公司）。於同圖中，橫軸是波長，縱軸是透射率。 如同圖所示般，彩色濾光片的紅（圖2的R)係不透過 波長約570 nm以下的光，而吸收並加熱。綠（同圖的G) 係不透過波長約450 nm以下的光，而吸收並加熱。又，彩 色濾光片的藍（同圖的B)係不透過波長約3 3 0 nm以下的 光，而吸收並加熱。所以，波長約5 70 nm以下的光會加熱 彩色濾光片。 所以，對於爲了將液晶面板的加熱抑制到最小限度來 說，使用放射出有助於液晶面板內之光學活性物質的反應. 之波長區域的光之燈，而且對紫外線反應材料的聚合反應 之助益較小，且被彩色濾光片吸收而會加熱該當彩色濾光 片之波長域的光之放出盡可能小的紫外線光源，進行液晶 面板的紫外線照射處理。 具體來說，將有助於液晶面板內之光學活性物質的反 應之波長區域的積算放射照度設爲a，將彩色濾光片的吸 10 - 201126234 收波長’且無助於前述光學活性物質的反應之波長區域的 積算放射照度設爲b時，燈的積算放射照度是a > b爲佳。 亦即’彩色濾光片所吸收之波長域係如圖2所示，藍 是吸收3 3 0 nm以下的光，又，綠是吸收460 nm以下的光， 紅是吸收570 nm以下的光，因此，彩色濾光片會加熱。 進而’另一方面，對於紫外線反應材料的硬化來說， 實質上有效的波長是360 nm以下，會對液晶造成傷害的波 長實質上是310 nm以下。再者，310 nm的光爲0的話並無 法得到完全的硬化。另一方面，因爲包含300 nm以下的光 的話，對液晶的傷害會變大，故不包含300 nm以下的光爲 佳。 如前述般，因爲360 nm〜570 nm的波長不僅無助於紫 外線反應材料的硬化，也會被彩色濾光片吸收，故此波長 域的光結果只會引起彩色濾光片的加熱作用。 因彩色濾光片所致之吸收而彩色濾光片被加熱時，熱 會傳導至玻璃基板與液晶•紫外線反應材料，該等會被加 熱。 而產生紫外線反應材料的溫度分布，產生紫外線反應 材料的硬化反應速度分布，硬化率會產生偏差。結果，預 傾角產生偏差，而產生液晶顯示不均。 依據以上所述，在使用從紫外線光源放出的光，進行 液晶面板的紫外線照射處理時，於放出的光中，成爲[3 1 〇 nm〜3 60 nm之波長區域的積算放射照度a]>[3 60 nm〜570 nm之波長區域的積算放射照度b ]爲佳。 -11 - 201126234 亦即，使用放出如[310 nm〜360 nm之波長區域的積 算放射照度a] > [360 nm〜5 70 nm之波長區域的積算放射照 度b]之波長域的光之燈，從具備此種燈的光照射部對於液 晶面板照射光，使液晶面板內的光學活性物質產生反應， 藉此，可一邊抑制彩色濾光片的溫度上升，將液晶面板的 溫度上升抑制到最小限度，並抑制預傾角之偏差的發生， —邊可有效地使紫外線反應材料硬化。 再者，作爲放出此種光的燈，例如可使用日本特願 2009-5 1 624所記載之稀有氣體螢光燈等。 本發明者等係作爲可照射如前述之光的燈，調査可使 用何種燈。結果，如後述般，可知使用稀有氣體螢光燈爲 佳。再者，稀有氣體螢光燈可變更波長域。 在此，如後述般，針對波長域不同之3種類的稀有氣 體營光燈與金屬鹵化物燈（metal halide lamp)，調查用 以對液晶賦予預傾角之紫外線反應材料（單體）的硬化所 需之照射時間、前述波長域的放射照度（mW/crn2 )、照 射量（mJ/cm2 )及將來自該等燈的光，以前述單體的硬化 所需之照射時間，照射至液晶面板所使用之玻璃基板時的 玻璃基板之溫度上升。 結果，雖然在使用金屬鹵化物燈時，在沒有空氣冷卻 之狀態下，基板的溫度上升至3 0°C程度爲止，但是，在使 用稀有氣體螢光燈時，在沒有空氣冷卻之狀態下，可將基 板的溫度上升抑制爲8°C以下。 又，於此時的「360 nm〜570 nm的波長區域」中照射 -12- 201126234 量最大的燈的照射量是3 3 3 3 ( m J / c m 2 )，如果照射量是 3 5 00 ( mJ/cm2 )以下的話，可將玻璃基板的溫度上升抑制 爲所希望之値以下。 亦即，使用前述稀有氣體蛋光燈’構成液晶面板之製 造裝置的光照射部，將3 6 0 nm〜5 7 0 nm之波長區域的照射 量設爲3 500 ( mJ/cm2 )以下的話，可抑制彩色濾光片的溫 度上升，並將液晶面板的溫度上升抑制爲最小限度，又可 抑制於預傾角產生偏差。 依據以上內容，在本發明中如下所述，解決前述課題 〇 (1)於具備有支持具備彩色濾光片，且將含有光學 活性物質之液晶封入至內部的MVA式之液晶面板的支持部 ，與對於被前述支持部支持之前述液晶面板照射來自燈之 光的光照射部，藉由對於被前述支持部支持之液晶面板照 射來自前述光照射部之光，一邊對前述液晶面板施加電壓 ，一邊使前述液晶面板內的光學活性物質產生反應而於液 晶面板內部形成配向部之液晶面板的製造裝置中，作爲前 述光照射部的燈，使用於該燈的發射光譜中，將有助於液 晶面板內之光學活性物質的反應之波長區域的積算放射照 度設爲a，將彩色濾光片的吸收波長，且無助於前述光學 活性物質的反應之波長區域的積算放射照度設爲b時，燈 的積算放射照度是a > b的燈。 (2 )於前述（1 )中，前述積算放射照度a係3 1 0 nm 〜3 6〇 nm之波長區域的積算放射照度；前述積算放射照度 -13· 201126234 b係3 60 nm〜5 70 nm之波長區域的積算放射照度。 (3)於前述（1) (2)中，作爲前述燈，使用不放 射實質上波長300 nm以下之光的稀有氣體螢光燈。 [發明的效果] 於本發明中，使用將身爲有助於光學活性物質之反應 的波長區域之310 nm〜360 nm的波長區域之積算放射照度 設爲a，將彩色濾光片的吸收波長，無助於前述光學活性 物質之反應的波長區域360 nm〜570 nm之波長區域的積算 放射照度設爲b時，成爲a > b的紫外線光源來照射液晶面 板，故可抑制彩色濾光片的溫度上升，並將液晶面板的溫 度上升抑制爲最小限度。爲此，可抑制於預傾角產生偏差 之同時，有效地使紫外線反應材料硬化。 【實施方式】 於圖3揭示本發明之液晶面板的製造裝置（紫外線照 射裝置）之構成例。 本發明之液晶面板的製造裝置（紫外線照射裝置）係 具備載置光照射部1與液晶面板3的工作台2。於工作台2係 設置有對載置之液晶面板3施加電壓的機構2a。對於載置 於工作台2的液晶面板3，如前述專利文獻1所記載般，一 邊從施加電壓的機構2 a施加電壓，一邊照射來自光照射部 1的光。 液晶面·板3係如前述般，在兩張透光性基板（玻璃基 -14- 201126234 板）3a、3b之間，封入包含紫外線反應材料的液晶3c的構 造’同圖是揭示槪念圖者，但是，如前述般，於玻璃板上 ’形成有多數主動元件（TFT )與液晶驅動用電極、彩色 濾光片、透明電極（ITO )，以密封劑3d封止周圍。 光照射部1係具備光源（燈）la與鏡片lb，作爲光源 (燈）1係使用放出如[310 nm〜360 nm之波長區域的積算 放射照度]> [360 nm〜5 70 nm之波長區域的積算放射照度] 的光之稀有氣體螢光燈。 前述光源1 a係從電源1 c供電而點燈。該電源1 c、前述 施加電壓的機構2 a係連接於控制部4，控制部4係控制光源 1 a的點燈、消燈、照射時間、施加於液晶面板8的電壓之 値及時間等。 液晶面板3係藉由未圖示之搬送機構等，載置於工作 台2上。控制部4係從施加電壓的機構2a施加電壓之同時， 從光照射部1對液晶面板照射光。然後，控制施加於液晶 面板的電壓、時間等之同時，控制光源1 a的點燈時間，一 邊抑制液晶面板的溫度上升，一邊使混合於液晶的紫外線 反應材料硬化，如前述般，賦予液晶預傾角。 圖4係揭示前述稀有氣體螢光燈之構成例的圖。稀有 氣體螢光燈係管狀構造，圖4係揭示以包含管軸的平面切 斷的剖面圖。稀有氣體螢光燈1 〇係具有內側管1 1 1與外側 管112幾近被配置於同軸之略雙重管構造的容器（發光管 )11，利用封著此容器11的兩端部11A、11B’於內部形成 圓筒狀的放電空間S。於放電空間S係封入有氣（xenon ) -15- 201126234 、氬（argon)、気（krypton)等的稀·有氣體。容器11係 由石英玻璃所構成，於內周面設置有低軟化點玻璃層1 4， 於此低軟化點玻璃層14的內周面，進而設置有螢光體層15 。此低軟化點玻璃層14係例如使用硼矽酸玻璃（ borosilicate glass )或銘砂酸鹽玻璃（aluminosilicate glass)等之硬質玻璃。又，螢光體層15係例如使用鉋賦活 鋁酸鎂鑭（La-Mg-Al-0:Ce)螢光體。於內側管111的內周 面設置有內側電極12，於外側管112的外周面設置有網狀 的外側電極1 3。該等電極1 2、1 3係中介存在容器1 1與放電 空間S而配置。電極12、13係經由導線W1 1、W1 2而連接電 源裝匱16。由電源裝置16施加高頻電壓時，在電極12、13 之間形成使介電質（111，112)中介存在的放電（亦即， 介電質屏障放電，dielectric-barrier discharge )，在氣氣 之狀況係產生波長172 nm的紫外光。在此所得之紫外光係 激發螢光體用的光，藉由照射螢光體層，放射中心波長爲 340 nm附近的紫外光。 於圖5揭示稀有氣體螢光燈之其他構成例。同圖（a) 係揭示以包含管軸之平面切斷的剖面圖，（b)係揭示（a )的A-A線剖面圖。於圖5中，燈20係具有一對電極22、23 ，電極22、23係配設於容器（發光管）21的外周面，於電 極22、23的外側設置有保護膜24。對於容器21之內周面的 光射出方向側，於對向側的內面設置有紫外線反射膜2 5 ( 參照圖5 ( b ))，於其內周設置有低軟化點玻璃層26，於 此低軟化點玻璃層26的內周面則設置有螢光體層27。其他 -16- 201126234 構造係與圖4所示者相同，封入於容器21內的放電空 氣體、使用於螢光體層27的螢光體也相同。高頻電1 於電極22、23時，在電極22、23之間形成介電質屏P ，如前述般產生紫外光。藉此激發螢光體，從螢光！ 生中心波長爲3 40 rim附近的紫外光，此光在紫外線1 25被反射，從未設置紫外線反射膜25的開口部份放！201126234 VI. Description of the Invention: [Technical Field] The present invention relates to a method for manufacturing a liquid crystal panel of an MVA (Multi-domain Vertical A1 ng nment) type, and particularly relates to encapsulation and mixing between two glass substrates An aligning liquid crystal which is aligned by a voltage application and a material which reacts with ultraviolet rays to generate a polymerized optically active material, and the liquid crystal panel is irradiated with ultraviolet rays to polymerize the ultraviolet ray reactive material, and the alignment film is formed on the liquid crystal panel of the glass plate. Manufacturing device. [Prior Art] A configuration example of a liquid crystal panel is disclosed in Fig. 12 . The liquid crystal panel 50 has a structure in which a liquid crystal 58 is sealed between two light-transmissive substrates (the first glass substrate 513 and the second glass substrate 5 2 ), and a plurality of active elements are formed on the first glass substrate 51 (for example, A thin film transistor: TFT53) and a liquid crystal driving electrode 54 (transparent electrode (ITO)) are formed thereon to form an alignment film 56. A color filter 57, an alignment film 56, and then a transparent electrode (ITO) 5 5 are formed on the second glass substrate 52. Then, the liquid crystal 58 is sealed between the alignment films of the two glass substrates 5 1 and 5 2 to seal the periphery with the sealant 59. In the liquid crystal panel of such a configuration, the alignment film 56 is applied with a voltage between the electrodes 54, 55 for controlling the liquid crystal alignment person that aligns the liquid crystal. Previously, the control of the alignment film was performed by rubbing, but in recent years, new alignment control techniques have been tried. The first glass substrate 51 on which the TFT element 53 is provided and the second glass substrate 52 on the first glass substrate 51 are sealed and mixed with a liquid crystal 58 having an alignment property by a voltage applied by 201126234, and ultraviolet rays. A material which generates a polymerized optically active material (an ultraviolet ray-reactive material, hereinafter referred to as a monomer), and which is irradiated with ultraviolet rays to polymerize the ultraviolet ray-reactive material (monomer) while applying a voltage to the liquid crystal panel. The alignment of the liquid crystal (that is, the substantially one molecular layer of the surface layer) of the glass substrates 51 and 52 via the alignment film 56 or the like is applied to the liquid crystal to impart a pretilt angle to the liquid crystal (for example, Patent Document 1). According to this method, the manufacturing process of the liquid crystal panel can be simplified because the projections having the bevels previously required for imparting the pretilt angle are not required. Therefore, the manufacturing cost and the manufacturing time of the liquid crystal panel can be reduced, and since there is no shadow of the projections, the number of apertures can be improved, and the power saving of the backlight can be brought about. In the manufacturing technique of the liquid crystal panel which performs this new alignment control, there are several proposals for a method of irradiating ultraviolet rays to a material of a mixed liquid crystal and an ultraviolet ray reactive material (hereinafter referred to as a liquid crystal containing an ultraviolet ray-reactive material). In the liquid crystal display element device and the manufacturing method j thereof described in the patent document 2, ultraviolet irradiation of the first condition and ultraviolet irradiation of the second condition of the ultraviolet irradiation of the first condition are proposed, in this order. A method of manufacturing a liquid crystal display device in combination (see paragraph 0012, etc.). Specifically, the illuminance and the integrated intensity are irradiated with ultraviolet rays under the condition that the second condition is greater than the first condition. Thus, in the first In the ultraviolet irradiation of the condition, since the polymerization is relatively gentle, the occurrence of the alignment abnormality can be suppressed, and even if the polymerization rate of -6 to 201126234 is increased, the liquid crystal layer having no alignment abnormality or suppressed can be obtained without any problem. In the ultraviolet irradiation of the second condition, it is described that the ratio of the low-wavelength component in the vicinity of 3 i 〇 nm is improved (refer to the description of paragraph 0037). The liquid crystal display element device and the method of manufacturing the same are described in Patent Document 3. "Disclosed" It is known that in order to prevent the liquid crystal from deteriorating, the irradiation uses a filter to cut a short wavelength region of less than 310 nm. Ultraviolet light is better.", "But if the intensity of the wavelength of 310 nm is completely changed to erbium, it is difficult to obtain the desired liquid crystal alignment. For this reason, the intensity of the wavelength of 3 10 nm is 0.02 to 0.05 mW/cm2. The light source is better (see the description in paragraph 0019, etc.). In the "liquid crystal display device device and the method for producing the same" described in the patent document 4, it is described that the ultraviolet light having a short wavelength is advantageous in obtaining the vertical alignment of the liquid crystal in a short period of time, but it is easy to promote the deterioration of the liquid crystal molecules or the like. In contrast, the long-wavelength ultraviolet light is more difficult to promote the deterioration of liquid crystal molecules or the like. However, it takes a long time to obtain the vertical alignment of the liquid crystal (see the description of paragraph 003 1 and the like) to disclose the wavelength range of the ultraviolet light to be irradiated. However, in Patent Document 4, the temperature rise of the color filter is not disclosed. [PRIOR ART DOCUMENT] [Patent Document 1] JP-A-2003-177408 (Patent Document 2) Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. [Problem to be Solved by the Invention] As described above, the material for the mixed liquid crystal and the ultraviolet ray reactive material is irradiated with ultraviolet rays emitted from the ultraviolet light source. There are several proposals for the treatment method, but the results of various experiments and reviews by the inventors have also obtained the following findings. In the liquid crystal panel using the above-described new alignment control, a polymerization reaction is carried out by reacting ultraviolet rays with a liquid crystal to produce a polymerized ultraviolet-ray reactive material, and the ultraviolet-ray-reactive material is polymerized by ultraviolet irradiation. When the liquid crystal panel is irradiated with ultraviolet rays, as shown in Fig. 12, ultraviolet rays are irradiated from the side of the first glass substrate 5 1 on the side opposite to the second glass substrate 52 on which the color filter 57 is formed. Therefore, when the light emitted from the ultraviolet light source 'includes light having a wavelength in a wavelength region absorbed by the color filter 5*7, the color filter 57 is heated. When the color filter 57 is heated, heat is transferred from the heated color filter 57 to the liquid crystal 58 and the ultraviolet ray-reactive material ' enclosed between the glass substrates 5, 52, causing the heat to be heated. Thereby, the temperature distribution of the ultraviolet ray-reactive material is generated, and the polymerization reaction (hardening reaction) velocity distribution of the ultraviolet ray-reactive material occurs, and the polymerization rate (hardening rate) varies. As a result, the pretilt angle is deviated, and liquid crystal display unevenness is generated. Further, if the temperature of the heated liquid crystal 508 is high, there is a concern that the liquid crystal may be deteriorated. Therefore, in order to reduce the deviation of the pretilt angle of -8-201126234 from the ultraviolet radiation emitted from the ultraviolet light source, the temperature distribution of the entire liquid crystal panel is uniform. At this time, the temperature of the liquid crystal does not become the local temperature. For this reason, in the ultraviolet irradiation, the platform on which the liquid crystal panel is placed is cooled (for example, water-cooled), and the liquid crystal panel as a whole is controlled in such a manner as to have a uniform temperature distribution. However, the liquid crystal panel has been enlarged in recent years (for example, 2 m X 2 m or more), and the platform on which the liquid crystal panel is placed has also been enlarged. When the temperature of the liquid crystal panel rises due to heating, the cost of the apparatus becomes high for a large cooler to reduce the temperature thereof. Further, when the temperature is raised, it is difficult to control in such a manner that the temperature distribution over a large area becomes uniform. When the temperature rises during the irradiation, the light-transmitting substrate (the first glass substrate 5 1 ) on the side of the light to be irradiated expands due to thermal expansion, and the liquid crystal panel is deformed, which causes a defect. Thus, the liquid crystal is mixed with the ultraviolet ray-reactive material, and the ultraviolet ray is irradiated to generate a polymerization reaction. In the manufacture of the liquid crystal panel using the new alignment control described above, the reaction of the ultraviolet ray-reactive material and the light absorbing of the color light-receiving sheet have not been previously performed. The resulting problem is compared and discussed in the wavelength region. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a liquid crystal panel manufacturing apparatus which does not increase the temperature of a liquid crystal panel as much as possible in light irradiation (curing) of an ultraviolet ray reactive material. [Means for Solving the Problem] The inventors made their efforts to study the results and came up with the following findings. First, the absorbance for the wavelength of light is measured for the ultraviolet light reaction -9-201126234 material (monomer) mixed with the liquid crystal which is generally used now. Figure 1 reveals the graph of the absorbance of the UV-responsive material for the wavelength of light. In the same figure, the horizontal axis is the wavelength (nm), and the vertical axis is the transmittance (%). As shown in the figure, the ultraviolet ray-reactive material absorbs light particularly in a region below 370 nm, that is, the ultraviolet ray-reactive material generates a polymerization reaction. However, in fact, it is known that the comprehensiveness contributes to the polymerization of light having a wavelength of 360 nm or less, and the light having a wavelength longer than 360 nm has a small contribution to the polymerization reaction. Here, the spectral characteristics of the color filter (SCHOTT Group, Inc.) are disclosed in Fig. 2 . In the same figure, the horizontal axis is the wavelength and the vertical axis is the transmittance. As shown in the figure, the color of the color filter (R of Fig. 2) does not transmit light having a wavelength of about 570 nm or less, but is absorbed and heated. Green (G in the same figure) absorbs and heats light without passing through a wavelength of about 450 nm or less. Further, the blue color of the color filter (B of the same figure) does not transmit light having a wavelength of about 3 3 0 nm or less, but is absorbed and heated. Therefore, light having a wavelength of about 5 70 nm or less heats the color filter. Therefore, in order to minimize the heating of the liquid crystal panel, a light lamp that emits a wavelength region that contributes to the reaction of the optically active substance in the liquid crystal panel is used, and the polymerization reaction of the ultraviolet ray reactive material is assisted. The light is absorbed by the color filter, and the light source in the wavelength range of the color filter is heated to emit the ultraviolet light source as small as possible, and the ultraviolet ray irradiation treatment of the liquid crystal panel is performed. Specifically, the integrated illuminance in the wavelength region that contributes to the reaction of the optically active substance in the liquid crystal panel is set to a, and the absorption of the color filter is taken as a wavelength 'and does not contribute to the aforementioned optically active substance. When the integrated illuminance in the wavelength region of the reaction is b, the integrated illuminance of the lamp is a > b is preferable. That is, the wavelength domain absorbed by the color filter is as shown in Fig. 2. Blue absorbs light below 340 nm, and green absorbs light below 460 nm. Red absorbs light below 570 nm. Therefore, the color filter will heat up. Further, on the other hand, for the curing of the ultraviolet ray reactive material, the substantially effective wavelength is 360 nm or less, and the wavelength which causes damage to the liquid crystal is substantially 310 nm or less. Furthermore, if the light of 310 nm is 0, it cannot be completely hardened. On the other hand, since light containing 300 nm or less is used, damage to the liquid crystal is increased, so that light of 300 nm or less is not preferable. As described above, since the wavelength of 360 nm to 570 nm does not contribute to the hardening of the ultraviolet reactive material, it is also absorbed by the color filter, so that the light in the wavelength region causes only the heating effect of the color filter. When the color filter is heated by the absorption by the color filter, heat is transmitted to the glass substrate and the liquid crystal/ultraviolet light-reactive material, which is heated. The temperature distribution of the ultraviolet ray-reactive material generates a hardening reaction rate distribution of the ultraviolet ray-reactive material, and the hardening rate varies. As a result, the pretilt angle is deviated, resulting in uneven liquid crystal display. According to the above, when the ultraviolet light irradiation treatment of the liquid crystal panel is performed using the light emitted from the ultraviolet light source, the integrated illuminance of the wavelength region of [3 1 〇 nm to 3 60 nm] is generated in the emitted light. [The integrated irradiance b of the wavelength region of 3 60 nm to 570 nm is preferable]. -11 - 201126234 That is, a light lamp that emits a wavelength region such as [the integrated illuminance a] of the wavelength region of 310 nm to 360 nm > [the integrated illuminance b of the wavelength region of 360 nm to 5 70 nm] The light-irradiating portion including the lamp emits light to the liquid crystal panel to react the optically active material in the liquid crystal panel, thereby suppressing the temperature rise of the color filter and suppressing the temperature rise of the liquid crystal panel to a minimum. The limit, and the occurrence of the deviation of the pretilt angle, is suppressed, and the ultraviolet ray reactive material is effectively hardened. Further, as the lamp for emitting such light, for example, a rare gas fluorescent lamp described in Japanese Patent Application No. 2009-5 1 624 or the like can be used. The inventors of the present invention investigated which lamp can be used as a lamp that can illuminate the light as described above. As a result, as will be described later, it is known that a rare gas fluorescent lamp is preferably used. Furthermore, rare gas fluorescent lamps can change the wavelength range. Here, as will be described later, for three kinds of rare gas camplights and metal halide lamps having different wavelength domains, the curing of the ultraviolet ray reactive material (monomer) for imparting a pretilt angle to the liquid crystal is investigated. The required irradiation time, the illuminance (mW/crn2) in the wavelength range, the irradiation amount (mJ/cm2), and the light from the lamps are irradiated to the liquid crystal panel by the irradiation time required for the curing of the monomer. The temperature of the glass substrate at the time of using the glass substrate rises. As a result, when the metal halide lamp is used, the temperature of the substrate rises to about 30 ° C in the state where there is no air cooling, but in the case where the rare gas fluorescent lamp is used, in the state where there is no air cooling, The temperature rise of the substrate can be suppressed to 8 ° C or lower. In addition, in the "wavelength region of 360 nm to 570 nm" at this time, the irradiation amount of the lamp having the largest amount of -12-201126234 is 3 3 3 3 ( m J / cm 2 ), and if the irradiation amount is 3 5 00 ( When mJ/cm2) or less, the temperature rise of a glass substrate can be suppressed to the desired below. In other words, when the light irradiation unit constituting the manufacturing apparatus of the liquid crystal panel of the above-described rare gas egg light lamp is used, the irradiation amount in the wavelength region of 370 nm to 570 nm is set to 3 500 (mJ/cm 2 ) or less. The temperature rise of the color filter can be suppressed, and the temperature rise of the liquid crystal panel can be suppressed to a minimum, and variation in the pretilt angle can be suppressed. According to the above, in the present invention, as described below, the above-described problem (1) is provided in a support portion of an MVA-type liquid crystal panel that supports a color filter and encapsulates a liquid crystal containing an optically active material therein. In the light-irradiating portion that irradiates the light from the lamp to the liquid crystal panel supported by the support portion, the liquid crystal panel supported by the support portion is irradiated with light from the light-irradiating portion, and a voltage is applied to the liquid crystal panel. In a manufacturing apparatus for reacting an optically active material in the liquid crystal panel to form an alignment portion in a liquid crystal panel, a lamp as the light irradiation portion is used in an emission spectrum of the lamp to contribute to a liquid crystal panel. When the integrated illuminance in the wavelength region of the reaction of the optically active material is a, the integrated illuminance in the wavelength region of the reaction of the optically active material is b, and the illuminance is set to b. The integrated irradiance is a light of a > b. (2) In the above (1), the integrated illuminance a is an integrated illuminance in a wavelength region of 3 10 nm to 3 6 〇 nm; the integrated irradiance - 13· 201126234 b is 3 60 nm to 5 70 nm The integrated illuminance of the wavelength region. (3) In the above (1) and (2), as the lamp, a rare gas fluorescent lamp that does not emit light having a wavelength of substantially 300 nm or less is used. [Effect of the Invention] In the present invention, the integrated illuminance of the wavelength region of 310 nm to 360 nm which is a wavelength region which contributes to the reaction of the optically active substance is set to a, and the absorption wavelength of the color filter is used. When the integrated illuminance in the wavelength region of 360 nm to 570 nm in the wavelength region where the reaction of the optically active material is not applied is b, the ultraviolet light source of a > b illuminates the liquid crystal panel, so that the color filter can be suppressed. The temperature rises and the temperature rise of the liquid crystal panel is suppressed to a minimum. For this reason, it is possible to suppress the occurrence of variations in the pretilt angle and effectively cure the ultraviolet ray reactive material. [Embodiment] A configuration example of a manufacturing apparatus (ultraviolet irradiation apparatus) of a liquid crystal panel of the present invention is disclosed in Fig. 3 . The manufacturing apparatus (ultraviolet irradiation apparatus) of the liquid crystal panel of the present invention includes a stage 2 on which the light irradiation unit 1 and the liquid crystal panel 3 are placed. The table 2 is provided with a mechanism 2a for applying a voltage to the liquid crystal panel 3 placed thereon. As described in the above-mentioned Patent Document 1, the liquid crystal panel 3 placed on the stage 2 is irradiated with light from the light-irradiating portion 1 while applying a voltage from the mechanism 2a to which the voltage is applied. As described above, the liquid crystal panel/plate 3 has a structure in which a liquid crystal 3c containing an ultraviolet ray-reactive material is sealed between two light-transmissive substrates (glass-based 14-201126234 slabs) 3a and 3b. However, as described above, a plurality of active devices (TFTs), liquid crystal driving electrodes, color filters, and transparent electrodes (ITO) are formed on the glass plate, and the periphery is sealed with the sealant 3d. The light irradiation unit 1 includes a light source (light) 1a and a lens lb, and a light source (light) 1 is used to emit an integrated illuminance such as [the wavelength region of 310 nm to 360 nm] > [wavelength of 360 nm to 5 70 nm] The rare light fluorescent lamp of the light that accumulates the illuminance of the area]. The light source 1a is powered from the power source 1c and turned on. The power source 1c and the voltage applying mechanism 2a are connected to the control unit 4, and the control unit 4 controls the lighting, the erasing, the irradiation time, the voltage applied to the liquid crystal panel 8, and the time of the light source 1a. The liquid crystal panel 3 is placed on the table 2 by a transport mechanism or the like (not shown). The control unit 4 applies light to the liquid crystal panel from the light irradiation unit 1 while applying a voltage from the mechanism 2a to which the voltage is applied. Then, while controlling the voltage, time, and the like applied to the liquid crystal panel, the lighting time of the light source 1a is controlled, and the ultraviolet ray reactive material mixed with the liquid crystal is cured while suppressing the temperature rise of the liquid crystal panel, thereby imparting a liquid crystal pre as described above. inclination. Fig. 4 is a view showing a configuration example of the above-described rare gas fluorescent lamp. The rare gas fluorescent lamp is tubular in construction, and Fig. 4 is a cross-sectional view showing a plane cut away from the tube axis. The rare gas fluorescent lamp 1 has a container (light-emitting tube) 11 in which the inner tube 1 1 1 and the outer tube 112 are arranged close to each other in a coaxial double tube structure, and the both end portions 11A and 11B of the container 11 are sealed. A cylindrical discharge space S is formed inside. In the discharge space S, a rare gas such as xenon -15-201126234, argon or krypton is sealed. The container 11 is made of quartz glass, and a low-softening point glass layer 14 is provided on the inner peripheral surface. The inner peripheral surface of the low-softening point glass layer 14 is further provided with a phosphor layer 15. The low-softening point glass layer 14 is, for example, a hard glass such as borosilicate glass or aluminosilicate glass. Further, the phosphor layer 15 is, for example, a planer-activated magnesium aluminate strontium (La-Mg-Al-0:Ce) phosphor. The inner electrode 12 is provided on the inner circumferential surface of the inner tube 111, and the outer outer electrode 13 is provided on the outer circumferential surface of the outer tube 112. The electrodes 1 2, 1 3 are arranged such that the container 11 and the discharge space S are interposed. The electrodes 12, 13 are connected to the power supply unit 16 via wires W1 1 and W1 2 . When a high-frequency voltage is applied from the power supply device 16, a discharge (ie, dielectric-barrier discharge) is formed between the electrodes 12 and 13 to intervene the dielectric (111, 112). The condition is to produce ultraviolet light with a wavelength of 172 nm. The ultraviolet light obtained here excites the light for the phosphor, and irradiates the phosphor layer to emit ultraviolet light having a center wavelength of around 340 nm. Another configuration example of the rare gas fluorescent lamp is disclosed in FIG. Figure (a) shows a cross-sectional view taken along the plane including the tube axis, and (b) shows a cross-sectional view taken along line A-A of (a). In Fig. 5, the lamp 20 has a pair of electrodes 22 and 23, and the electrodes 22 and 23 are disposed on the outer peripheral surface of the container (light-emitting tube) 21, and a protective film 24 is provided outside the electrodes 22 and 23. The ultraviolet light reflecting film 25 (see FIG. 5 (b)) is provided on the inner surface of the inner peripheral surface of the container 21 on the light emitting direction side, and the low softening point glass layer 26 is provided on the inner periphery thereof. A phosphor layer 27 is provided on the inner peripheral surface of the low-softening point glass layer 26. Others -16- 201126234 The structure is the same as that shown in Fig. 4, and the discharge air contained in the container 21 and the phosphor used in the phosphor layer 27 are also the same. When the high frequency power is applied to the electrodes 22 and 23, a dielectric screen P is formed between the electrodes 22 and 23, and ultraviolet light is generated as described above. This stimulates the phosphor, from the fluorescent! The ultraviolet light having a center wavelength of around 3 40 rim is reflected by the ultraviolet light 125, and the opening portion of the ultraviolet reflective film 25 is never provided!
於圖6〜圖8揭示在本發明的實施例中使用之稀 螢光燈的分光放射光譜。再者，橫軸是波長（nm) 是分光放射照度（V W/cm2/ nm )。如前述般，稀 螢光燈係可藉由螢光物質的調和等來變更放射之波 圖6〜圖8係揭示放射之波長域不同的3種類之稀有 光燈A、B、C的分光放射光譜者。再者，於圖9爲 ，重疊表示3種類之稀有氣體螢光燈A、B、C的分 光譜者。 在此，稀有氣體螢光燈A係將以氙爲主要成份 氣體封入於放電空間S，於螢光體層15使用絶賦活 鑭（La-Mg-Al-0:Ce)螢光體（簡稱爲LAM螢光體） 又，稀有氣體螢光燈B係將以氙爲主要成份的 體封入於放電空間S，於螢光體層15使用鉋賦活鋁 鎂（Ce-Mg-Ba-Al-O)螢光體（簡稱爲CAM螢光體） 另一方面，稀有氣體螢光燈C係將以氙爲主要 稀有氣體封入於放電空間S，於螢光體層15使用鉋 酸釔（Y-P-〇:Ce)螢光體（簡稱爲YPC螢光體）。 _ "之 施加 放電 層產 射膜 至外 氣體 縱軸 氣體 域， 體螢 比較 放射 稀有 酸鎂 有氣 鋇· 份的 活憐 -17- 201126234 再者，如圖9所示般，於310 nm〜3 60 nm的波長區域 中，短波長側的波長比例係爲「稀有氣體螢光燈A」> 「 稀有氣體螢光燈B」>「稀有氣體螢光燈C」。 如圖6〜圖8所示，稀有氣體螢光燈係放射爲[310 nm 〜3 60 nm之波長區域的積算放射照度a] >[3 60 nm〜570 nm之波長區域的積算放射照度b]的光。 亦即，此燈係對紫外線反應材料之聚合反應的助益較 小，且被彩色濾光片吸收而加熱該當彩色濾光片之光的放 出比例較小，可抑制彩色濾光片的溫度上升。 因此，也可抑制來自彩色濾光片的傳導熱所致之液晶 及紫外線反應材料的加熱。爲此，紫外線反應材料的溫度 分布成爲幾近均一，該當紫外線反應材料的聚合反應速度 分布也成爲幾近均一。因此，於預傾角中偏差變小，液晶 顯示不均的產生也變小。又，因爲也抑制液晶的加熱，故 不用擔心會有液晶的變質。 再者，因爲波長3 00 nm以下的光會被液晶吸收，照射 量變多時有對液晶產生傷害的可能性，故不放射實質上波 長3 00 nm以下的光的燈爲佳，於圖6〜圖9所示之稀有氣體 螢光燈中，幾乎不放射波長3 00 nm以下的光。 爲了確認本發明的效果，進行以下的試驗，針對從燈 放射之波長與液晶面板的溫度上升進行檢證。並於圖1 1揭 示其結果。 圖11係揭示使用3種類的稀有氣體螢光燈A〜C與金屬 鹵化物燈，照射液晶面板所使用之玻璃基板時用以對液晶 -18- 201126234 賦予預傾角之單體（紫外線反應材料）的硬化所需之照射 時間、3 1 0 nm〜3 6 0 nm的波長區域之放射照度及照射量、 3 60 nm〜5 70 nm的波長區域之放射照度及照射量、以及從 各燈將光以前述單體的硬化所需之照射時間，照射至液晶 面板所使用之玻璃基板時的玻璃基板之溫度上升者。照射 時間係與包含於照射之光的短波長之照度因應比例而反應 速度不同’包含越多短波長則照射時間越短，短波長越少 則需要使照射時間加長。 再者’前述放射照度係相當於前述之積算放射照度， 照射量係放射照度乘以照射時間之値。 前述稀有氣體螢光燈A〜C之分光放射光譜係如圖6〜 圖8所示。又，於圖1 0揭示前述金屬鹵化物燈之分光放射 光譜（使用濾光片）的圖。再者，橫軸是波長（nm)，縱 軸是分光放射照度（//W/cm2/ nm)。前述金屬齒化物燈 係先前使用於紫外線照射裝置者，於內部封入水銀與金屬 的鹵化物（halide )。作爲金屬的鹵化物，使用鐵鹵化物 (iron halide，Fe )。再者，從封入水銀與鐵鹵化物的金 屬鹵化物燈也放出波長3 1 0 nm以下的光。直接將從前述金 屬鹵化物燈放出的光照射至液晶面板時，對液晶會造成較 大傷害。爲此，在本試驗中，在金屬鹵化物燈與液晶面板 之間，設置實質上截止波長310 nm以下之波長的帶通濾波 器（bandpass filter)。再者，如前述般，因爲波長310 nm的光是0的話則無法取得完全的硬化，故前述帶通濾波 器係設計爲不會對液晶造成傷害，且可取得完全的硬化程 -19 * 201126234 度地使波長310 nm的光通過。 由圖1 0可知，經由濾光片照射之金屬鹵化物燈之狀況 中，爲「波長3 60 nm以下之波長區域的積算放射照度a」 <「大於波長3 60 nm之波長區域的積算放射照度b」。再 者，於310 nm〜360 nm的波長區域中，短波長側的波長比 例係爲「稀有氣體螢光燈A」>「稀有氣體螢光燈B」>「 稀有氣體螢光燈C」>「金屬鹵化物燈+濾光片」。 在本實驗中使用之金屬鹵化物燈之狀況中，單體的硬 化所需之時間是240秒，波長310 nm〜360 nm之積算放射 照度係約19.8 mW/cm2，照射量是4752 mJ/cm2，波長360 nm〜570 nm之積算放射照度是86.2 mW/cm2，照射量是 20832 mJ/cm2 ° 又，此時之玻璃基板的溫度上升係在無空氣冷卻之狀 態下爲30°C，在有空氣冷卻之狀態下爲7°C。 另一方面，在稀有氣體螢光燈A之狀況中，單體的硬 化所需之時間是180秒，波長310 nm〜3 60 nm之積算放射 照度係16.4 mW/cm2，照射量是2952 mJ/cm2，波長360 nm 〜5 70 nm之積算放射照度是10.2 mW/cm2，照射量是1836 mJ/cm2 。The spectral emission spectrum of the rare fluorescent lamp used in the embodiment of the present invention is disclosed in Figs. 6 to 8 . Further, the horizontal axis is the wavelength (nm) which is the spectral irradiance (V W/cm 2 / nm ). As described above, the dilute fluorescent lamp can change the radiation wave by the adjustment of the fluorescent substance, etc. FIG. 6 to FIG. 8 show the spectroscopic emission of the three types of rare lamps A, B, and C having different radiation wavelength ranges. Spectral. Further, in Fig. 9, the spectral spectra of the three types of rare gas fluorescent lamps A, B, and C are superimposed. Here, the rare gas fluorescent lamp A is sealed with a gas containing ruthenium as a main component in the discharge space S, and a phosphorous body (La-Mg-Al-0:Ce) phosphor (abbreviated as LAM) is used for the phosphor layer 15. Phosphor) In addition, the rare gas fluorescent lamp B is sealed in the discharge space S with the main component of strontium, and the Ce-Mg-Ba-Al-O fluorescent film is used for the phosphor layer 15. Body (abbreviated as CAM phosphor) On the other hand, the rare gas fluorescent lamp C is sealed in the discharge space S with ruthenium as the main rare gas, and YP-〇:Ce is used in the phosphor layer 15 Light body (referred to as YPC phosphor). _ " The discharge of the discharge film to the outer gas vertical axis gas field, the body firefly is relatively rare, the magnesium sulfate is gas, and the part of the living -17- 201126234, as shown in Figure 9, at 310 nm In the wavelength region of ~3 60 nm, the wavelength ratio on the short wavelength side is "rare gas fluorescent lamp A" > "rare gas fluorescent lamp B" > "rare gas fluorescent lamp C". As shown in Fig. 6 to Fig. 8, the rare gas fluorescent lamp emits radiation (the integrated illuminance of the wavelength region of [310 nm to 3 60 nm] a] > [the integrated illuminance of the wavelength region of 3 60 nm to 570 nm b ] the light. That is, the lamp has less benefit to the polymerization reaction of the ultraviolet ray-reactive material, and is absorbed by the color filter to heat the color filter, and the light emission ratio of the color filter is small, and the temperature rise of the color filter can be suppressed. . Therefore, heating of the liquid crystal and the ultraviolet ray reactive material due to the conduction heat of the color filter can also be suppressed. For this reason, the temperature distribution of the ultraviolet ray-reactive material is nearly uniform, and the polymerization rate distribution of the ultraviolet ray-reactive material becomes almost uniform. Therefore, the deviation becomes small in the pretilt angle, and the generation of liquid crystal display unevenness also becomes small. Further, since the heating of the liquid crystal is also suppressed, there is no fear of deterioration of the liquid crystal. In addition, since light having a wavelength of 300 nm or less is absorbed by the liquid crystal, there is a possibility that damage to the liquid crystal may occur when the amount of irradiation is increased. Therefore, it is preferable to emit light having a wavelength of substantially 300 nm or less. In the rare gas fluorescent lamp shown in Fig. 9, light having a wavelength of 300 nm or less is hardly emitted. In order to confirm the effect of the present invention, the following test was carried out to verify the temperature rise from the lamp and the temperature rise of the liquid crystal panel. The result is shown in Figure 11. Fig. 11 is a view showing a monomer (ultraviolet reactive material) for imparting a pretilt angle to liquid crystal-18-201126234 when three types of rare gas fluorescent lamps A to C and a metal halide lamp are used to illuminate a glass substrate used for a liquid crystal panel. Irradiation time required for hardening, irradiance and irradiation in a wavelength region of 3 10 nm to 360 nm, irradiance and irradiation amount in a wavelength region of 3 60 nm to 5 70 nm, and light from each lamp When the irradiation time required for the curing of the monomer is irradiated to the glass substrate used for the liquid crystal panel, the temperature of the glass substrate rises. The irradiation time is different from the illuminance ratio of the short wavelength of the light to be irradiated, and the reaction speed is different. The shorter the short wavelength, the shorter the irradiation time, and the shorter the short wavelength, the longer the irradiation time is required. Further, the radiation illuminance corresponds to the integrated illuminance described above, and the irradiation amount is the radiance multiplied by the irradiation time. The spectroscopic emission spectra of the rare gas fluorescent lamps A to C are as shown in Figs. 6 to 8. Further, Fig. 10 shows a diagram of the spectral emission spectrum (using a filter) of the above metal halide lamp. Further, the horizontal axis is the wavelength (nm), and the vertical axis is the spectral irradiance (//W/cm2/nm). The metal toothed lamp is previously used in an ultraviolet irradiation device, and a halide of mercury and a metal is sealed inside. As the metal halide, an iron halide (Fe) is used. Further, light of a wavelength of 3 1 0 nm or less is also emitted from a metal halide lamp in which mercury and iron halides are enclosed. When the light emitted from the aforementioned metal halide lamp is directly irradiated onto the liquid crystal panel, the liquid crystal is greatly damaged. For this reason, in this test, a bandpass filter having a wavelength substantially cut off at a wavelength of 310 nm or less was provided between the metal halide lamp and the liquid crystal panel. Furthermore, as described above, since the light having a wavelength of 310 nm is 0, complete hardening cannot be obtained, so the band pass filter is designed so as not to cause damage to the liquid crystal, and a complete hardening process can be obtained -19 * 201126234 Light passing through a wavelength of 310 nm is passed through. As can be seen from Fig. 10, in the case of the metal halide lamp irradiated by the filter, "the integrated illuminance a in the wavelength region of the wavelength of 3 60 nm or less" < "the integrated radiation of the wavelength region larger than the wavelength of 3 60 nm" Illumination b". Further, in the wavelength region of 310 nm to 360 nm, the wavelength ratio on the short wavelength side is "rare gas fluorescent lamp A" > "rare gas fluorescent lamp B" > "rare gas fluorescent lamp C" > "Metal halide lamp + filter". In the case of the metal halide lamp used in this experiment, the time required for the hardening of the monomer is 240 seconds, the integrated illuminance at a wavelength of 310 nm to 360 nm is about 19.8 mW/cm 2 , and the irradiation amount is 4752 mJ/cm 2 . The integrated illuminance of the wavelength of 360 nm to 570 nm is 86.2 mW/cm2, and the irradiation amount is 20832 mJ/cm2 °. At this time, the temperature rise of the glass substrate is 30 ° C in the state without air cooling. It is 7 ° C in the state of air cooling. On the other hand, in the case of the rare gas fluorescent lamp A, the time required for the hardening of the monomer is 180 seconds, the integrated illuminance of the wavelength of 310 nm to 3 60 nm is 16.4 mW/cm2, and the irradiation amount is 2952 mJ/ The cumulative irradiance of cm2, the wavelength of 360 nm to 5 70 nm is 10.2 mW/cm2, and the irradiation amount is 1836 mJ/cm2.
又，此時的溫度上升係在無空氣冷卻之狀態下爲5. 1 °C 〇 在稀有氣體螢光燈B之狀況中，單體的硬化所需之時 間是3 3 0秒，波長310 run〜3 60 nm之積算放射照度係11.6 mW/cm2，照射量是 3828 mJ/cm2，波長 360 nm 〜570 nm 之 -20- 201126234 積算放射照度是10.1 mW/cm2，照射量是3 3 3 3 mJ/cm2。 又，此時的溫度上升係在無空氣冷卻之狀態下爲7.6 t 〇 在稀有氣體螢光燈C之狀況中，單體的硬化所需之時 間是480秒，波長310 nm〜360 nm之積算放射照度係8.5 mW/cm2，照射量是 4080 mJ/cm2，波長 360 nm 〜570 nm 之 積算放射照度是4.7 mW/cm2，照射量是2256 ml/cm2。Further, the temperature rise at this time is 5. 1 ° C in the state of no air cooling. In the case of the rare gas fluorescent lamp B, the time required for the hardening of the monomer is 3 30 seconds, and the wavelength is 310 run. The total irradiance of ~3 60 nm is 11.6 mW/cm2, the irradiation is 3828 mJ/cm2, and the wavelength is 360 nm to 570 nm. -20- 201126234 The integrated irradiance is 10.1 mW/cm2, and the irradiation is 3 3 3 3 mJ. /cm2. Moreover, the temperature rise at this time is 7.6 t in the state of no air cooling. In the case of the rare gas fluorescent lamp C, the time required for the hardening of the monomer is 480 seconds, and the integration of the wavelengths of 310 nm to 360 nm is calculated. The irradiance is 8.5 mW/cm2, the irradiation amount is 4080 mJ/cm2, the integrated illuminance at a wavelength of 360 nm to 570 nm is 4.7 mW/cm2, and the irradiation amount is 2256 ml/cm2.
又，此時的溫度上升係在無空氣冷卻之狀態下爲6.7 °C 〇 再者，單體硬化所需之照射量（310 nm〜3 60 run)係 爲「稀有氣體螢光燈A」<「稀有氣體螢光燈B」<「稀有 氣體螢光燈C」< 「金屬鹵化物燈」，但是，此係因爲短 波長比例越大反應速度越快，需要照射量變少之故。如前 述般，於310 nm〜360 nm的波長區域中，短波長側的波長 比例係「稀有氣體螢光燈A」>「稀有氣體螢光燈B」〉「 稀有氣體螢光燈C」>「金屬鹵化物燈+濾光片」。 亦即，金屬鹵化物燈之狀況中，係「波長3 60 nm以下 之波長區域的積算放射照度a」< 「大於波長3 60 nm之波 長區域的積算放射照度b」，稀有氣體螢光燈A、B、C之 狀況中，係「波長360 nm以下之波長區域的積算放射照度 aj >「大於波長360 nm之波長區域的積算放射照度b」。 然後，使用該等燈，以單體的硬化所需之照射時間來 照射液晶面板所使用之玻璃基板，玻璃基板的溫度上升係 在金屬鹵化物燈之狀況中，上升約30°C的溫度。相對於此 -21 - 201126234 ，稀有氣體螢光燈A、B、C之狀況中 者也僅上升約7.6 °C。 在此，稀有氣體螢光燈中，玻璃 之稀有氣體螢光燈B的360 nm〜570 量是3 3 3 3 m J/cm2，此時的溫度上升 態下爲7.6°C。據此，如果將3 60 nm 的照射量設爲3 5 00 ( mJ/cm2 )以下的 片的溫度上升，並將液晶面板的溫度 ，又可抑制於預傾角產生偏差》 爲此，於前述圖1所示之液晶面 由控制部4控制對液晶面板的照射日 3 5 00 ( mJ/cm2 )程度以下爲佳。 一般來說，液晶係在其溫度成赁 變質。所以，使用金屬鹵化物燈進行 溫度成爲約50°C〜60°C，有液晶變質 能性。對液晶面板吹附空氣等而進行 制溫度上升，但是，因此需要冷卻機 化，成本也會變高" 相對於此，如果使用稀有氣體螢 行冷卻，液晶面板的溫度也可保持在 防止液晶的變質* 再者，在前述內容中，作爲本案 用金屬鹵化物燈，除此之外使用高壓 是，得到與使用金屬鹵化物燈時相同 ，即使溫度上升最大 基板的溫度上升最多 nm之波長區域的照射 係在無空氣冷卻之狀 〜570 nm之波長區域 話，可抑制彩色濾光 上升抑制爲最小限度 板的製造裝置中，藉 I寺間，使照射量成爲 ! 5 0 °c〜6 0 °c以上時會 照射時，液晶面板的 而引起產品不良的可 冷卻的話，雖然可抑 構而裝置整體會大型 光燈的話，即使不進 3 5 °C〜4 0 °C以下，可 發明的對照實驗，使 水銀燈進行實驗，但 結果。 -22- 201126234 【圖式簡單說明】 [圖1 ]揭示對於光之波長的紫外線反應材料之吸光度的 圖。 [圖2]揭示彩色濾光片之分光特性的圖。 [圖3 ]揭示本發明之液晶面板的製造裝置之構成例的圖 〇 [圖4]揭示稀有氣體螢光燈之構成例的圖。 [圖5 ]揭示稀有氣體螢光燈之其他構成例的圖。 [圖6]揭示稀有氣體螢光燈a之分光放射光譜的圖。 [圖7]揭示稀有氣體螢光燈B之分光放射光譜的圖。 [圖8]揭示稀有氣體螢光燈C之分光放射光譜的圖。 [圖9]重疊揭示稀有氣體螢光燈a、b、C之分光放射光 譜的圖。 [圖1 0 ]揭示金屬鹵化物燈之分光放射光譜的圖。 [圖11]揭示稀有氣體螢光燈A〜C與稀有氣體螢光燈的 放射照度、照射量、基板之溫度上升的圖。 [圖1 2]揭示液晶面板之構成例的圖。 【主要元件符號說明】 1 :光照射部 1 a :光源（燈） 1 b :鏡片 1 c :電源 -23- 201126234 2 :工作 2 a :施力| 3 :液晶 3a ， 3b ： 3c :包爸 3 d :密妾 4 :控制 10 ， 20 ， 1 1 :容署 12 ， 13 : 15， 27 ： 21 :容署 22 - 23 ： 3 1 :放霄 32 ， 33 ： 25 ， 37 ： 台 ]電壓的機構 面板 透光性基板（玻璃基板） ί紫外線反應材料的液晶 ί劑 部 30 :燈 i (發光管） 電極 螢光體層 I (發光管） 電極 ί容器 電極 紫外線反射膜 -24-In addition, the temperature rise at this time is 6.7 °C in the state of no air cooling, and the irradiation amount (310 nm to 3 60 run) required for the monomer hardening is "rare gas fluorescent lamp A" < "Rare gas fluorescent lamp B" < "rare gas fluorescent lamp C" < "metal halide lamp", however, since the reaction rate is faster as the ratio of short wavelength is higher, the amount of irradiation is required to be small. As described above, in the wavelength region of 310 nm to 360 nm, the wavelength ratio on the short wavelength side is "rare gas fluorescent lamp A" > "rare gas fluorescent lamp B" > "rare gas fluorescent lamp C"> "Metal halide lamp + filter". That is, in the case of the metal halide lamp, "the integrated illuminance a of the wavelength region of the wavelength of 3 60 nm or less" < "the integrated illuminance b of the wavelength region larger than the wavelength of 3 60 nm", the rare gas fluorescent lamp In the case of A, B, and C, the integrated illuminance aj > "the integrated illuminance b of the wavelength region larger than the wavelength of 360 nm" in the wavelength region of 360 nm or less. Then, using these lamps, the glass substrate used for the liquid crystal panel is irradiated with the irradiation time required for the curing of the monomer, and the temperature rise of the glass substrate rises to a temperature of about 30 °C in the state of the metal halide lamp. In contrast, -21 - 201126234, the situation of the rare gas fluorescent lamps A, B, and C only increased by about 7.6 °C. Here, in the rare gas fluorescent lamp, the amount of 360 nm to 570 of the rare gas fluorescent lamp B of the glass is 3 3 3 3 m J/cm 2 , and the temperature rise state at this time is 7.6 ° C. According to this, if the temperature of the sheet of 3,500 nm or less is set to 3,500 (mJ/cm2) or less, and the temperature of the liquid crystal panel is suppressed, the deviation of the pretilt angle can be suppressed. The liquid crystal surface shown in Fig. 1 is preferably controlled by the control unit 4 to the extent of the irradiation time of the liquid crystal panel of 3 5 00 (mJ/cm 2 ) or less. In general, liquid crystals are metamorphosed at their temperatures. Therefore, the temperature of the metal halide lamp is about 50 ° C to 60 ° C, and the liquid crystal is deteriorated. The liquid crystal panel is blown with air or the like to increase the temperature. However, cooling is required, and the cost is also high. In contrast, if the rare gas is used for the cooling, the temperature of the liquid crystal panel can be maintained at the liquid crystal. In the above, as the metal halide lamp used in the present case, the use of a high voltage is the same as that in the case of using a metal halide lamp, and the temperature of the substrate rises by a maximum of nm at a maximum temperature even if the temperature rises. In the case where there is no air-cooling in the wavelength range of ~570 nm, it is possible to suppress the suppression of color filter rise to the minimum. In the manufacturing apparatus, the amount of irradiation is changed to 50 °c~6 0 When it is irradiated at a temperature above °C, if the liquid crystal panel is cooled, the product may be cooled. If the device is large and the device is large, it may be invented even if it does not enter 3 5 °C to 40 °C. In the control experiment, the mercury lamp was tested, but the result. -22- 201126234 [Simple description of the drawing] [Fig. 1] A diagram showing the absorbance of the ultraviolet ray-responsive material for the wavelength of light. Fig. 2 is a view showing the spectral characteristics of a color filter. [Fig. 3] Fig. 3 is a view showing a configuration example of a manufacturing apparatus of a liquid crystal panel of the present invention. Fig. 4 is a view showing a configuration example of a rare gas fluorescent lamp. Fig. 5 is a view showing another configuration example of a rare gas fluorescent lamp. Fig. 6 is a view showing a spectral emission spectrum of a rare gas fluorescent lamp a. Fig. 7 is a view showing a spectral emission spectrum of a rare gas fluorescent lamp B. Fig. 8 is a view showing a spectral emission spectrum of a rare gas fluorescent lamp C. Fig. 9 is a view in which the spectroscopic emission spectra of the rare gas fluorescent lamps a, b, and C are superimposed and displayed. [Fig. 10] A diagram showing the spectral emission spectrum of a metal halide lamp. Fig. 11 is a view showing the illuminance, the irradiation amount, and the temperature rise of the substrate of the rare gas fluorescent lamps A to C and the rare gas fluorescent lamp. FIG. 1 is a view showing a configuration example of a liquid crystal panel. [Main component symbol description] 1 : Light irradiation unit 1 a : Light source (lamp) 1 b : Lens 1 c : Power supply -23- 201126234 2 : Operation 2 a : Shili | 3 : Liquid crystal 3a , 3b : 3c : Bao Da 3 d : 妾 4 : Control 10 , 20 , 1 1 : 容 12 , 13 : 15, 27 : 21 : 容 22 - 23 : 3 1 : 霄 32 , 33 : 25 , 37 : Taiwan Mechanism Panel Translucent Substrate (Glass Substrate) ί UV Reactive Liquid Crystal Ø Part 30: Lamp i (Light Emitting Tube) Electrode Phosphor Layer I (Light Emitting Tube) Electrode ί Container Electrode UV Reflecting Film-24-