TW200915617A - Light emitting device and method for manufacturing the same - Google Patents

Abstract

A method for manufacturing a light emitting device 1 having a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type which is different from the first conductivity type and emitting light by applying voltage to the first and second semiconductor layers in a forward direction, comprises an electrode formation process to form a first electrode and a second electrode which is isolated from the first electrode on the first semiconductor layer and a voltage application process to allow the second electrode and the second semiconductor layer to be electrically conductive in both directions by applying voltage between the first and second electrodes formed in the electrode formation process respectively.

Description

200915617 - VI. Description of the Invention: ^ Technical Field of the Invention The present invention relates to a method of manufacturing a light-emitting device including a partial conductive portion and a light-emitting device. [Prior Art] In the conventional method of manufacturing a light-emitting diode (Light Emitting Diode) formed by a nitride-based compound semiconductor, the following method is employed: ^ On a sapphire substrate, an n-type GaN layer, a light-emitting layer, and p Type "Order =: compound semiconductor layer. Weaving, from (4) (10) layer to - part η type ι with the remainder, and the η-type (10) layer is exposed 'and on the p-type (10) layer to form the P5L electrode, on the other hand, In the exposed _Ga: /, the n-type electrode is formed separately. Among the light-emitting elements of the upper/left type electrode gemstone δ, there are the following components: in the standing layer, the η layer, and the semi-insulating layer (Ι After the layers are formed in sequence, the burial: =, the surface of the layer is formed with an η-side electrode and heat-treated to form a low-resistance region on the side of the layer, and then a side electrode is formed. The following is described in Patent Document i. Since the light-emitting element is in the shape=resistance region, it is possible to circulate between the side electrode and the n-side electrode without manufacturing a contact hole. 】He makes 冤/^ in 1 [Patent Document 1] 曰本特开平4·273175号Bulletin [Summary of the Invention] LED manufacturing method compound shadow technology and _ technical type electrode and n-type electrode and p-type GaN layer; η touch point of view 'p-type electricity; = type ^ must be ohmic connection, therefore must be electricity Lying η | It is difficult to see the eyes of the singer." i (4) separate steps are formed separately. 200915617

In the conventional LED manufacturing method of a nitride-based compound semiconductor, it is difficult to simplify the process of the LED. After the D, the manufacturing of the illuminating tree of the illuminating tree described above is provided, and the n-side electrode is subjected to a heat treatment step, and an I-side electrode must be formed after the heat treatment step.

In the light-emitting element sheet described in Patent Document 1, it is impossible to simultaneously perform the (four) electrode and the I-electrode. Therefore, in the method for producing a light-emitting device described in Patent Document 1, it is difficult to simplify the process of the hairpin. In view of the above circumstances, the purpose of the present invention is to provide a light-emitting device for the purpose of achieving the above object, and to provide a first semiconductor of the present invention. The layer and the second layer of the first conductivity type are combined to emit light by applying the forward cake to the first semiconductor layer. In the electrode forming step, the first semiconductor is formed in the first semiconductor and the second electrode is separated from the first electrode, and the voltage is applied to the electrode to form a voltage between the electrodes. The second electrode and the second semiconductor layer are formed into an electrically conductive double-guide = conductive i is a "manufacturing method", the first conductivity type is a p-type, and the second i-between: borrowing her from the first half and the second After half-cut I: and: 8 2 electric i ° ' so that the second electrode and the second semiconductor layer can be made electrically? The second electric === = f. Further, in the method of manufacturing a light-emitting device, the electrode forming material forms the first electrode and the second electrode. In order to achieve the above object, the present invention provides a light-emitting device, a first semiconductor layer of a ^-electric type, and a first semiconductor layer provided thereon a third conductive type of a second conductivity type. a semiconductor layer; a first electrode disposed on the first semiconductor light = 200915617; a second electrode formed on the first semiconductor sound under the second electrode, and the second electrode is separately provided; the conductive portion is turned on Conduction. The pole and the second semiconductor layer are electrically bidirectional, and in the above-mentioned light-emitting device, a part of the force is formed, and a second electrode is formed between the first electrode and the second electrode: the area of the electrode can be smaller than that of the first electrode above the electrode. The second = material of the second axis of the material is centered, and according to the present invention, the process of the light-emitting device can be simplistic. [Embodiment] The best shape bear of the invention [1st embodiment] Fig. 1 shows an energy structure according to the ith embodiment of the present invention: 2: Fig. 2 shows a continuation of the first embodiment according to the present invention (light-emitting device) Structure of 1: The light-emitting device 1 of the form of the substrate includes a semiconductor stack. The stone substrate 10' has a (_) plane; the nS GaN layer j' has a second conductivity type on the stone substrate 1Q. The second semiconductor layer; the light-emitting; 22' is provided on the n-type GaN layer 20; and the p-type GaN layer 24 is provided on the second conductivity type second semiconductor layer which is different from the second conductivity type. The upper light-emitting device 1 includes a p-type electrode 4A, a first electrode provided in a predetermined region on the p-type GaN layer%, and an n-type electrode 42 on the p-type (} your layer 24曰, The second electrode is provided with the electrode 40 separated by the electrode 40. Further, as shown in FIG. 2, the light-emitting device 9 is inserted through both the p-type GaN layer 24 and the light-emitting layer 22 under the n-type electrode 42 to reach η. A predetermined region up to a partial region of the GaN layer 20, a package & a portion in which the n-type electrode 42 and the n-type GaN layer 2 are electrically conductively bidirectionally turned on, and the n-type GaN layer 20 is illuminated. Layer 22, p-type GaN layer 24 is a separate example 200915617 ~ as in the case of organometallic chemical vapor deposition ' Metal ehemiul

VaP〇r Deposition) A layer formed of a III-calcium compound semiconductor. For example, it is assumed that Si is used as an n-type impurity. The light-emitting layer 22 has a sub-well structure formed by postal xxN/GaN. Further, the p-type GaN layer 24 is formed of p-GaN doped with a predetermined amount as a P-type dopant. The Mg in the brother and sister is further disposed on the p-type GaN layer 24 according to the embodiment, and is disposed at a position spaced apart from the p-electrode 40, that is, electrical mutual == as in the case of including the top view The slightly squared illumination I is set to ^ 2, 24, near the angle of the technical field, set n & j for example her formation. Further, in the second embodiment 2, the use = 〇, the area of the pole 42 is smaller than the area of the p-type electrode 4 而, and the shape is formed by the electric conduction portion 26 in the n-type. The electrode 42 pole 42 and the n-type GaN layer 2 g ^ lower f ' are used to make the n-type electricity "; the t-portion conducting portion 26 is to electrically connect the two regions to the first t « type (10) layer 2G does not produce a whole ^^ W 'P type (four) layer 24 and two n type electrode 42; the package is applied to the P type electrode 40 and the type electrode 42 below the ==:, 42 directly under the η pass The layer 20 can be electrically double-guided and 'forms an n-type GaN layer (4). On the sapphire substrate, the capillary layer can be formed by applying GaN. In addition, the quantum well structure of the light-emitting layer 22 forms early-quantum. The well structure or the multiple quantum well structure is the luminescent layer of the quantum well structure. Further, the D-shaped (10) μ is not used.

A P-type contact layer doped with Mg may be formed to be higher than the Mg doping amount of the p-type GaN layer 24, and a P-type contact layer doped with Mg (p+ type (10)^_M (X: VD, The buffer on the sapphire substrate K), the n-type Ga ^ layer 2, the GaN layer core contact layer may be a molecular beam crystal method _= M-beam Epitaxy or a hydride gas phase crystal method (HvpE) , a compound semiconductor layer formed by HaHde Phase Epitaxy) or the like. The p-p-electrode 40 and the η-electrode 42 may also be made of oxygen scales (叾-shaped or 'ρ_electrode 4G and n-type electrode 42 may also be used for the purpose of

A metal material composed of Ni, Au, Pd, or Cr is formed. Further, a pad electrode (pad dectr) may be formed in a partial region on the p-type electrode 40. Similarly, the pad electrode is also formed in a predetermined region on the n-type electrode 42. In this case, the material for forming the pad electrode provided on the pattern electrode 40 and the pad electrode provided on the n-type electrode 42 may be formed of the same material. For example, the pad electrode may be mainly formed of a metal material such as a blade, a film, and Au. The light-emitting device 1 of the present embodiment constituted by the above configuration is an LED that emits light of a wavelength of a blue region. For example, a lighting device! Blue for face-up

The LED emits a light with a peak voltage of 3·5 (ν) and a forward current of 2 〇 mA. As for the planar size of the light-emitting device 1, the vertical size and the horizontal size are each slightly 350 μm. . Further, the light-emitting device 1 may be an LED that emits light having a peak wavelength in an ultraviolet region, a near-ultraviolet region, or a green region; however, the region of the peak wavelength of light emitted from the LED is not limited to the wavelength of the regions. Further, in other modified examples, the planar size of the light-emitting device) is not limited to this. For example, it is also possible to design the vertical dimension and the lateral dimension to be slightly 1 mm 〇 (Manufacturing method of the light-emitting device 1) Fig. 3(a) is a longitudinal sectional view showing the epitaxial growth substrate. Further, Fig. 3(b) is a longitudinal sectional view showing the formation of an electrode on a long-lasting plate. In addition, Fig. 3(C) shows a longitudinal sectional view after forming p-type 200915617. Further, Fig. 3 shows that the formation portion κ Ji; :0/,"-- :;t- :" 〇ry 2ι H ;9 grows to form the crystal growth substrate 2 (Fig. 3 (8)). The booster 46 covers/types the layer 2424 to form the electrode 46, and the indium tin oxide is used as the electrode: Moreover, (2:2:: Zhongyi uses a transparent material such as Ni, = Pd or Cr to form electricity: the hybrid method uses a Ag, Α, and a 'shield' to form a photoresist in a predetermined region on the electrode 46. The thunder electrode is used as a county so that the area of the n-type electrode 42 is made small in th. Then, the paste technique is removed by removing the mask electrode 46 to form a p-type electric 1 〇 11 rn " electrode The magical cymbal in the ΓΓ ΓΓ 成 成 设有 设有 设有 设有 设有 设有 设有 设有 设有 设有 设有 设有 设有 设有 设有 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ The electrode is formed with η. The interval is Ϊΐ := The voltage is applied to the P-type electrode 40 and the n-type electrode 42 is applied by pressing the ten-touch tear 50 to the p-type electrode 40, and the electric contact is made. To the n-type electrode 42. Then, by (4)sn: the pinch 52, apply a predetermined voltage to the p-type electrode 4〇 and n-type; ^ and 疋, say, the first p-type electrode 4〇 Between the positive electrode 42 and the n-type electrode 42 and the n-type (10) 屛m : : electrical bi-directional; 1 state, that is, by applying an excessive ^ T = pole 4 and n type Use between electrodes 42 to make n-type Below the electrode 42 two layers of 200915617 layer mGa:: layer 2G at least - part of the electrical bi-directional conduction. The semiconductor layer of the light-emitting layer 22 is bonded to the light; the square = type (10) layer 24 is bonded to the formed semiconductor, broken _ two Bonding 2, ^, ^ layer 2 〇 3 = 24 through the luminescent layer 22 can fully with n-type G = knife and P ^ pressure, applied to the p-type electrode 4Q and n-type with "422 = raw two-way The region of the ?-type electrode under the n-type electrode 42 is turned on, and the region of the P-type GaN layer 24 is formed from the layer 2 of the P-type GaN layer, and the p-type (10) layer is formed. a portion of the conductive portion 26 (Fig. 3(d)) of the two-electrode and the second electrical double-conducting. The formation of the fascinating reverse voltage is small, and the P-type GaN layer 24 and the n-type (10) > 2〇2 are formed. Semiconductor junction 'and p-type GaN; ΐ r, j: °ps 〇aN"24 ~

The type of lightning is applied between the Pi electrode 4G and the n-type f pole 42 by a voltage that breaks the pn junction, thereby forming a partial conduction portion 26. When you form the light-emitting layer 22 between the P-type (four) layer 24 and the n-type GaN layer 20, the contact between the p-type GaN layer and the light-emitting layer μ is broken, and the light-emitting sound and the n-type GaN layer 20 are interposed. A voltage of a size to be joined is formed between the p-type electrode 40 and the n-type electrode 42 by the electric field, thereby forming a partial conduction portion %. In addition, when the light-emitting layer 22 has a quantum well structure, the junction formed between the quantum well structures, the junction formed by the plurality of well layers and the complex barrier layers included in the quantum well structure, and the quantum well structure for destroying the p-type GaN layer The voltage of the size of the n-type GaN layer and 20 is formed by applying the voltage between the electrode 4 and the n-type electrode 42 to form a portion of the via portion 26. (Operation of Light-Emitting Device 1) First, when a predetermined amount of electric power is supplied to the P-type electrode 40 and the n-type electrode 42, a current passes through the partial conduction portion 26 from the n-type electrode 42 and is added from the partial conduction portion via the n-type. The GaN layer 20 is supplied to the light emitting layer 22. Then, the light-emitting layer 22 emits light of a predetermined wavelength range in response to the supplied current. The light emitted from the light-emitting layer 22, 200915617 - is transmitted through the sapphire substrate 10 and is radiated to the outside of the light-emitting device 1. Further, a portion of the conduction portion 26 provided under the n-type electrode 42 is turned on to supply the current supplied from the n-type electrode 42 to the n-type GaN layer 2''. Therefore, in the region where the partial conductive portion 26 is formed, since the light-emitting layer 22 in which the region has existed before the partial conductive portion 26 is formed is destroyed and the function as the light-emitting layer 22 is lost, the light-emitting layer 22 under the pattern electrode 42 is not Glowing. (Effect of the first embodiment) According to the light-emitting device 1 of the present embodiment, both the Ρ-type electrode 40 and the n-type electrode 42 are simultaneously formed on the 卩-type GaN layer 24, and a predetermined voltage is applied to the p. Between the type electrode 40 and the n-type electrode 42, the ρn junction included in the region from the 'Ρ-type GaN layer 24 to the part of the n-type GaN layer 20 under the n-type electrode 42 can be broken. Thereby, the region from the p-type ruthenium layer 24 to the one-type GaN layer 20 under the n-type electrode 42 can be electrically double-conducted. Therefore, the step of etching from the p-type GaN layer 24 to a part of the n-type GaN layer 20 necessary for the manufacturing method of the conventional light-emitting device, and the step of separately forming the p-type electrode and the n-type electrode can be omitted. In the step, the manufacturing process of the light-emitting device can be greatly simplified. Thereby, the reduction in the manufacturing cost of the light-emitting device 1 and the increase in the throughput can be achieved. Further, in the present embodiment, the p-type GaN layer 24 under the p-type electrode 4 is bonded to the n-type GaN layer 20 in the forward direction; on the other hand, the P-type GaN under the n-type electrode 42 is present. The bonding of both the layer 24 and the n-type GaN layer 20 is reversed. Therefore, the bonding under the n-type electrode 42 is broken due to the bonding of the excessively large electrode under the n-type electrode 42. Here, when the area ratio P of the n-type electrode 42 is smaller than the area of the electrode 40, and the area of the n-type electrode 42 is the same as the area of the p-type electrode 40, the n-type electrode 42 is broken. The amount of current required for the engagement is reduced. Therefore, in the present embodiment, by reducing the area of the n-plow electrode 42 to the area of the p-type electrode 40, it is possible to prevent the current amount from increasing rapidly and the bonding under the p-type electrode 40 to be broken. [Embodiment 2] Fig. 4 is a plan view showing a substrate on which a portion of the electrode is mounted in half of the process of the light-emitting device according to the second embodiment of the present invention. 10 200915617 and open the electrode _ 3, in addition to the outer peripheral electrode 44, Figure 3 (e) _ attached to the substrate 3 of the electrode approximately (c) said __ pole of the substrate 3 different points ^ The structure of the substrate 3 with the electrodes attached) is finely divided (4). The substrate 3 to which the electrode is attached according to the present embodiment is formed inside the outer circumference electrode of the inner edge of _electric: ί__4, in the inner side of the =r r44. For example, a plurality of unit electrodes 4δ are formed on the p-type (10) plane 25 (manufacturing method of the substrate 3 with electrodes attached thereto) Lei Meixi 4b 9 weeks: *Electrical and P-type electrodes 40 and η included in the single electrode 48 The type is formed on the surface of the surface (electrode == coffee plating method, and the line length is outside / the light is = a plurality of unit electrodes 48 * the shape of the area GaN 々 24 of the peripheral electrode 44 is on the crystal growth substrate 2 Upper, that is, formed on the surface of the P _ surface ί i3p〇rf 25. Then, after forming the mask, the (four) method forms m thick Μ (10) county 赖. 镰, to peel off the elemental electrode 48 麟; The in-service plural is 4 〇 (ΤΓ丝η八! 1 虫虫B曰 growth substrate 2, under the N2 ambient atmosphere can be attached i-pole treatment (alloy treatment). By (4) the alloy treatment, can also be expected ' On the entire surface of the P-type GaN surface 25 of the crystal growth substrate 2, the region ji is removed by the photoresist of the unit electrode 48 and the peripheral electrode 44 which should be formed in plural. Then, except for the portion covered by the mask,极48越外周雷# 2 Here, a plurality of cells are electrically connected to the second substrate electrode 44 on the crystal growth substrate 2, and the base of the attached electrode can also be formed. 3. The peripheral electrode 44 is set on the positive side, and one unit electrode cooker 11 200915617 is on the side, and a predetermined voltage is applied to the outer peripheral electrode - "working electrode 42. For example, in the present embodiment, A voltage of 〇〇rw right is applied between the outer peripheral electrode 44 and the n-type electrode 42 to break the semiconductor connection between the germanium-type GaN layer 24 and the light-emitting layer 22 under the first-type electrode 42 and the light-emitting layer. 22 and n-type GaN layer 2 〇 formed by the semiconductor port

The 丄 heavy voltage application process applies (4) a plurality of n-type electrodes. Because::J 稷m uses the lower part of the ί pole 42 to form a part of the conductive part %. For the Ρ type, after the bungee processing, the enthalpy electrode 40 is energized from the positive side of each of the plurality of arm electrodes 48, and the n-type electrode 42 is set between the H"40 and the n-type electrode 42. The unit electrode 48 and the lower part [Na's base (four) and the optical characteristics are different: the f-unit electrode 48 is applied in sequence to apply the treatment. The lightning can also be performed on all of the plurality of unit electrodes 48, and the number of shots is All of the unit electrodes 48 are subjected to the 4 treatment. 6 Next, the sapphire substrate 10 is polished to a predetermined thickness of the substrate 3, and the number of the first electrodes 48 is viewed in plan view and cut into individual regions; The secret domain, that is, the shape of the wafer cut into a crucible (for example, a slightly quadrangular acoustic wafer size (for example, a slight angle of 350_). Then, a plurality of light-emitting devices (wafer processing) are formed by cutting. In the present embodiment, the shape of the outer working pole 44 is substantially quadrangular in plan view, but the shape of the outer peripheral edge 300 of the substrate 2 of the growth substrate 2 may be slightly formed, for example. The luminescence that can be obtained from an epitaxial growth substrate 2 can also be a plural The electrode 48 is disposed at a predetermined interval along the inner edge of the outer peripheral electrode of the outer circular electrode 44. (Effect of the second embodiment) Green, green crystal growth base 12 according to the embodiment of the present invention The plate 2 can connect the plurality of unit electrodes with the outer circumference; between '^1η „, f4, so that the η type of the complex number is used for the Thundering gate electrode 44 ^ 〇aN ^ ^ , 4^47; ^ G: N ^ 4 In the manufacturing method of the butterfly (10), it is necessary to carry out the steps from the Ρ 二 2 to the step j, and the step of forming the p-type using electricity and the individual, and the manufacturing method of the illuminating device i can be compared with The manufacturing method of the conventional light-emitting device is greatly reduced from the manufacturing time and the manufacturing cost. f See Production I & South, Embodiment FIG. 5 shows an enlarged view of the substrate to which the electrode is attached according to the embodiment (4). The structure of the substrate 4 to which the electrode is attached) is obtained by sequentially forming the following portions; the sapphire substrate 2 (the buffer layer on Tt, the n-type layer 20 provided on the buffer layer, and the n-type GaN layer 2〇) The upper luminescent layer 22 is arranged on the hair

The layer L, the contact layer provided on the p-type (10) layer 24, and the P i provided on the contact layer are specifically grown on the sapphire substrate 1 with a semiconductor layer of M〇c. That is, first, A1N grows i5nm. Next, an n-type GaN layer 20 mainly composed of GaN is grown on the buffer layer by about 1300 Å to 18 nm. After that, as the light-emitting layer 22, the n-type GaN layer 20 is formed. The quantum formed by the upper ΪΪ ( ^ ^ Ν (Ιη () '2 (}% 8 Ν · 3 dirty, (10): 1G ~ 12) is a Λ-type layer 24, which will be doped with the Hechuan (on the luminescent layer 22) And 五In〇〇8Ga〇92N/p — Α1〇3 ' n & — =_^92N : l.7nm, p-A1〇3 Ga〇7 N : 4nm) Then, the p-(four) layer doped with Mg 5χΐ〇ι9 (seam-3) is grown to 8 〇 to the claw. After the phantom, as the contact layer, Mg lxi〇2G is doped on the p-type GaN layer 24 ( The P+:Ga=layer of cm-1 13 200915617 '3) grows by 25 nm, whereby the crystal growth substrate 2 can be obtained.

The _man's on the _, using the photolithography technology and the technique, each of the ® electrodes 43, the ring electrode 41 and the outer circumference _ 45. The specific U -3 〇〇 nm ^ IT 〇 ° ^ = 曰 growth on the substrate 2, under the Ν 2 ambient atmosphere. ^ plus 5 minutes of g then 'in the formation of the circular electrode 43, the ring electrode 4; (the mask formed by the formation of photoresist with the peripheral electrode 45 & F p. Then, by the IT 〇 = domain, cover cover The area outside the region is removed by 1T. Thereby, the distance from the inner edge of the electrode 45 is set to 2 〇. The outer circumference (voltage application processing to the substrate 4 with the electrode attached) is shown in FIG. When the voltage of 〇 to 1〇(¥) is between the round electrode and the outer peripheral electrode (4) Phase I af first 'Set the round electrode 43 to the negative side, and set the outer peripheral electrode 45 to the 々τ side, and then make the voltage value from 〇 ( V) to about 1 〇 (ν) sequentially increases between the positive 43 and the peripheral electrode 45. It is applied to the round electrode 43 and the circumference & the mouth. When the electrode ^ 4. 〇 (V), the flow to the round electrode 43 and the periphery The current between the electrodes 45 is about ^=pressure 4〇(V)W^43^ The current between the electric^43 and the peripheral electrode 45 is also a curve. FIG. 7 shows the application of the voltage of 〇 to 8_ to the round electrode and the peripheral electrode. (4) ϊ ϊ Λ Λ Λ ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' 43 and peripheral electricity 45. ^ = Pressure until a voltage is applied,

The current between the circular electrode 43 and the peripheral electrode 45 is about 1.GE~3(A)L; in addition, the voltage between the 'L 14 200915617 and the round electrode 43 and the peripheral electrode 45 is from about 6 〇(v) or more to about The 卩β current increases sharply. The reason for this is that since a voltage of about 8 〇 (V) is applied: between the round electrode 43 and the external electrode 45, the pn junction between the p-type (10) layer n-type GaN layer 20 under the circular electrode 43 is broken. A part of the conduction portion is formed. ϋ shows the IV curve after the semiconductor junction under the round electrode is broken. Eight-person' applies a voltage of about 80 (V) between the circular electrode 43 and the peripheral electrode 45. ίν A voltage (parallel voltage) is applied between the circular electrode 43 and the peripheral electrode 45, and the 卩 type under the circular electrode 43 is measured. (} The layer 24 and the n-type GaN layer 2 are applied with a voltage of 〇, and flow to the round electrode 43 and the periphery: 5 = current is about 〇·5Ε~4 (Α). On the other hand, the ping joint is broken, and the lower 'flow to the circular electric (four) and the outer and the general size (for example, 35°, the angle is about the same (10), the same size, the between the electrode 43 and the outer peripheral electrode 45 but in FIG. 8' Since the area of the outer peripheral electrode is very large, therefore: (Evaluation of characteristics after voltage application treatment): When the iVC is partially turned on and then applied to the round electrode and the ring electrode/negative side pass portion 26, the round electrode 43 is set. When the voltage is applied to the range from _ pole to 5.0 (ν), the ring _ 4! is interposed between the round electrode 43 and the round electrode 43; 5; =; (V) The above voltage color illuminates. In addition, the drive voltage of the substrate 4 series 20 (mA) with a peak of 460 nm and a peak wavelength of 460 nm is about 3·9. (ν). When the intermediate portion IV is merged into a portion of the conductive portion, a voltage is applied to the substrate 4 having the electrode and the ring electrode having the attached electrode, and the same characteristics as the curve of the lower portion are obtained. That is, after the round electrode 43, the round electrode 43 is set on the negative side, and the loop power 15 200915617 .=4±丨 is set on the positive side; and the forward voltage is applied to The round electrode 43 and the ring electrode 41 are at about 2.8 (V) or more, and the current is increased while the voltage is increased. On the other hand, when the reverse voltage is applied between the circular electrode 43 and the ring electrode 41, at least one is 4, almost no current flowed out. It can be seen that only a part of the conductive portion 26 is formed on at least a part of the lower portion of the round electrode 43. The above description relates to the case where the electric bunk is applied to the partial conductive portion of the circular electrode 4; A portion of the conduction portion 26 is formed by applying a voltage between the two electrodes = Ray = pole 4i. Hereinafter, a case where a voltage is applied between the electrodes 43 of the circle electrode 43 to form the partial conduction portion 26 will be described. 4 voltage application processing) 1 (4) ϋ shows the W curve when a voltage of ~1 〇 (V) to 1 〇 (V) is applied between the circular electrode and the ring electrode. First, the circular electrode 43 is set on the negative side, and the ring is set. The electrode 41 is set on the positive side, and the electric difficulty 1G (V) thorn l 〇 (V) is sequentially increased, and a voltage is applied between the circular electrode j and the % electrode 41. Under the voltage application condition, the circular electrode 43 is under The pn junction between p ^ 24 and the n-type GaN layer 20 is not destroyed, in the round The almost no current flowing between the 43 and the J electrode 41 has been confirmed. Fig. 12 shows the IV curve when the voltage of 〇 to 47 (V) is applied between the round electrode and the ring electrode. Similarly to the ?11, the round electrode is used. 43 is set on the negative side, and the ring electrode 41嗖ίί is on the positive side, and then the voltage value is sequentially increased from 0 (v) to about 47 (v), and a voltage is applied between the 囡 electrode 43 and the 电极 electrode 41 Until the applied voltage is about 5 〇 (v), the current of the flow electrode 43 and the ring electrode 41 _ is about 2 to 3 (eight) or less. In addition, the voltage applied between the circular electrode 43 and the ring electrode 41 is about 4 〇 (ν). From above to about 47 (ν), the current increases sharply. The reason for this is that since a voltage of about 47 (ν) is applied between the pole 43 and the ring electrode 41, the ρη junction between the p-type (four) layer % under the circular electrode 43 and the core GaN layer 20 is broken, and a partial conduction portion is formed. %. Figure 13 shows the IV curve after the semiconductor junction under the round electrode is broken. Next, 'between the circular electrode 43 and the ring electrode 41', the electric firm value is sequentially increased from -10 (V) to about 10 〇 (v), and the voltage is applied to the round electrodes 43 and 16 200915617. Between the soil electrodes 41. Under the voltage application condition after the pn junction was broken, +2.7 (V) was applied; and a current flowed between the round electrode 43 and the ring electrode 41, and the current value was increased as the voltage was increased. The applied voltage is 1 G (V); and the current between the current electrode 43 and the ring electrode 41 is 7.5 〇 E 〜 3 (A). Round % & above, the outline of the day (10) implementation of the position and Wei case, but the social record of the evil and the implementation of the dumping is not limited to the scope of the patent. Further, it is necessary to note that all combinations of the features described in the embodiments and the embodiments are known, and the green matter of the invention is required. F ^ _ _ [Simplified description of the drawings] Fig. 1 is a schematic perspective view of a light-emitting device according to the first embodiment. Fig. 2 is a longitudinal sectional view showing a light-emitting device according to the first embodiment. Figure. Figure 3 (a) ~ _ shows cuddling! The manufacturing process of the light-emitting device of the embodiment is a plan view of the substrate to which the electrode is attached according to the second embodiment. Fig. 5 is an enlarged perspective view showing a substrate on which an electrode is attached. In the embodiment when the coil is applied to the voltage between the round electrode and the outer peripheral surface, a voltage of 0 to 8 〇 (V) is applied to the round electrode and the outer circumference, and FIG. 8 is a circle according to an embodiment. π after breakdown of the semiconductor under the electrode FIG. 9 is an IV curve of the embodiment between the formation of the portion of the conduction portion and the rear ring electrode. % vs. Fig. 10 The IV curve when the portion of the conductive portion of the electromagnet is between the electrodes. Between the turns of the circle 1 1W voltage to the round electrode and the ring cell, according to the embodiment, apply a voltage of G to 47 (V) to the curve between the round electrode and the ring electrode 17 200915617. [Description of main component symbols] 1 to light-emitting device 2 to insect crystal growth substrate 3, 4 to substrate 10 with electrodes, sapphire substrate 20 to n-type GaN layer 22 to light-emitting layer 24 to p-type GaN layer 25 to p-type GaN surface 26 to partial conductive portion 40 to p-type electrode 41 to ring electrode 42 to n-type electrode 43 to round electrode 44, 45 to outer peripheral electrode 46 to electrode 48 to unit electrode 50, 52 to probe 300 to substrate outer edge 402 ~ peripheral electrode inner edge

Claims (1)

200915617 VII. Patent application scope·· „The method for manufacturing a neon light-emitting device, the first first type of the first conductivity type and the second type of the second conductivity type of the first conductivity type; 2 = New application _ The first semiconductor layer is not provided with the second semiconductor layer, and is characterized in that: the first step is a step of rinsing the first electrode separated by the electrode of the fresh semiconductor, the electrode of the wire 1 and the electrode of the electrode 4; 'A voltage is applied to the electrode forming step to form a second electrode between the two electrodes, and the second electrode and the second semiconductor body layer form an electrically conductive bi-directional state. The method for manufacturing a light-emitting device according to the first aspect, wherein the first V-type is a p-type and the second-conductivity type is a 11-type; the first electrode is bonded to the second electrode and the second electrode is bonded to the second electrode. a part of the Ρn state between the second semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer forms an electrically conductive bi-directional light-emitting device, wherein the area of the electrode is smaller than the first The second electrode is formed to make the second method, wherein The electrode forming step is a manufacturing method in which the same material is used, wherein, 7. The third electrode 1 and the second electrode are as in the patent application. The electrode forming step is a manufacturing method of the same material-shaped device. The light-emitting device of the present invention has a germanium electrode and the second electrode. The first semiconductor layer of the first conductivity type; 19 200915617 = 2f the second semiconductor of the electric type. The i-th conductive type; 亍 称 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The second electric t, the second semiconductor layer is electrically bidirectional. The second electrode and the light-emitting device of the eighth aspect, wherein the portion of the conductive portion is formed between the electrode of the first electrode and the second electrode. The illuminating device of the eighth or ninth aspect, wherein the area of the second electric _ stack is smaller than the area of the first electrode. The light-emitting device of item 8 or 9, wherein the material forming the first electrode is the same as the material forming the second electrode. The light-emitting device of the electrode of item 10, wherein the material for forming the first drain is the same as the material for forming the second electrode. Eight, schema · · 20