200908204 九、發明說明： 【發明所屬之技術領域】 技術領域 本發明係有關於一種射頻識別標籤及射頻識別標藏之 5 k方法。本發明適合作為例如可貼在金屬上之對應金屬 之射頻識別標籤。 L先前技】 背景技術 眾所白知，RFID(射頻識別）系、統係無線通信系統之 般而。，4RFID系統包含有射頻識別（亦稱^^出標 籤)及讀寫(RW)|置，且藉由無線通信，即可由㈣裝置對 射頻識別標籤進行資訊的讀寫。 在射頻識別標籤中，已知有藉由内建於射頻識別標籤 自體之電源動作的類型（稱作主動式標籤），及以來自賺裝 15置之接收電波作為驅動電力動作的類型（稱作被動式標鐵）。 在為使用被動式標籤UFID系統時，射賴別標藏係 以來自RW裝置之無線信號作為驅動電力，使内建之 LSI等積體電路動作’進行對應接收無線信號(控制信號 各種處理。利用前述接收無線信號之反射波，即可進行由 2〇射頻識別標籤對RW裝置之發送。即，可將標藏戦前述各 種處理的結果等資訊載於該反射波上，進行對謂裝置 送。 此外，RFID系統中有利用到各種頻帶而丽頻帶 (議MHz〜960MHz)最近正備受矚目。卿頻帶與既存之 5 200908204 13.56MHz頻帶或2.45GHz頻帶相比，可進行長距離通信。 在歐洲係使用868MHz，在美國係使用915MHz，而在日本 係使用953MHz附近的頻率。UHF帶之射頻識別標籤（以下 亦簡稱「標籤」）之通信距離係依照標籤内所用之1C晶片或 5 LSI等積體電路的性能而有所不同’大概在3〜5m左右。又， RW裝置之輸出為1瓦特(w)左右。 習知射頻識別標籤有例如後述之專利文獻1〜3所述者。 專利文獻1之技術的目的在於，即使在接近電波吸收體 使用RFID標籤時，也可抑制通信距離的降低，而可確保通 1〇信之可靠性。因此，專利文獻1中揭示了一種RFID標籤，該 RHD標籤包含有：具預定介電常數之長方體狀介電體構 件；該在介電體構件表面藉由㈣等形成為環形之收發用 天線圖形，及透過晶片接墊電氣連接於該天線圖形之1(：晶 片° 15 _賊™賴，當將其制在裝有㈣之瓶子或人 體等具一定之導電常數的物體時，可在介電體構件周圍由 天線圖形來形成小型環形天線，在貼附對象内也可形成電 流環路，而可形成更大的電流環路，以提高環形天線之增 益，加長通信距離。 2〇 專利文獻2之技術係以製作出通信距離長，而且印字也 很容易之腳標籤為目的。因此，專社獻2之麵標籤 係貼合第丨零件與第2零件構成者，其中第丨零件包含有：由 介電體構成之板狀第1基底；及覆蓋該第以底之表裡面中 之第1面的金屬層，而第2零件包含有：板狀第2基底；設於 6 200908204 該第2基底上，且與前述第1零件之金屬層電氣連接，而構 成通信天線之金屬圖形；連接於該金屬圖形，且可透過該 通信天線進行無線通信的電路晶片；及用以使該第2基底接 著於前述第1基底之表裡面中相對於前述第1面之第2面之 5黏著材層’前述第1零件之金屬層與前述第2零件之金屬圖 形係由導通構件電氣連接在一起。 專利文獻3之技術的目的在於提供一種RFID標籤，係 即使配設於含有金屬材料之機器内部時，也可抑制共振頻 率或Q值的變化，而可確保良好的通信狀態者。因此，專利 10 文獻3中，係以設有環狀天線圖形及1C之大略圓板狀基板、 及具有與該基板大略相等之直徑的圓板狀磁板來構成標 籤，且藉由以1條直線切除該磁板周圍之一部份，即可簡單 地調整電感。 藉此，即使在機器内部配置有金屬構件等時，也可以 15磁板抑制影響，又，還可藉由設定切除部之寬度，使減少 之金屬材料之天線電感與增加之磁半之電感互相抵銷，來 補償共振頻率或Q值的變化，而可確保良好的通信狀態。 專利文獻1 :特開2〇06-53833號公報 專利文獻2 :特開2006-301690號公報 2〇 專利文獻3 :特開2006-331101號公報 t發明内容;J 發明揭示 發明所欲解決之問題 在將UHF頻帶用之射頻識別標籤貼在金屬上時，會有 7 200908204 5 10 15 與IC晶片或卿積體電路(以下_晶片）之城匹配或辨 益變不佳，造成驗_的情形。因此，如前述專利絲 1〜3之技術，將射頻識職籤之*線_作成環形而作了各 種嘗試，在具有環狀天線圖形之射頻識職籤中，當晶片 之電納成分(為阻抗之倒數的導納虛部(通常㈣表示;):大 時，就會不__抗匹配⑽下亦_「匹配調整」）。 即，由於搭載於射頻識別標籤之晶片的等效電路可用 並列之電容成分CeP、及並列之電阻成分吻表示電納成 分B主要係依存電容成分⑽而變化，當該電容成分Ccp過 大時，就會不易設計、調整與其匹配之天線阻抗。 例如，如第13圖（比介電常數對Cep特性)所示，其中-们天線阻抗之調整方法係，藉由改變形成有天線圖形形成 之介電體(基板)的比介電常數(變小），即可增大天線圖形之 =應阻抗’而介電體之比介電常數也有其縮小的界限存在 (取J值為空氣之比介電常數=1)，就會不易對應大於該界限 之對應電谷成分Ccp所需之晶片（第13圖中之ES2)。 又’雖然藉由改變環狀天線圖形之環全長，也可進行 匹配調整，但脑環全長時，會使增益下降。 本發明係有鑑於前述問題而發明出來者，且其目的之 一在於提供可抑制增益降低，並可輕易地進行與晶片之匹 配調整的射頻識別標籤。 此外，本發明並不限於前述目的，其另一目的在於可 發揮由實施後述發明之最佳形態所示之各結構導出之作用 效果，且為先前技術無法獲得之作用效果。 20 200908204 用以解決問題之手段 為達成前述目的’本發明係使用以下所示之射頻識別 標籤及射頻識別標籤之製造方法。 (1) 即’本發明之射頻識別標蕺包含有：晶片連接部， 5係可連接晶片者；天線圖形，係呈環狀且電氣連接於前述 晶片連接部者；及導通構件，係可導通前述天線圖形之一 部份者。 (2) 此時’前述導通構件亦可分別設於以前述晶片連接 部為中心之對稱位置處。 10 (3)又’前述天線圖形亦可設於介電體構件之表層面， 且前述導通構件係由穿通孔構成，且該穿通孔係通過前述 介電體構件内部’互相導通前述介電體構件之相對之各面 上的前述天線圖形者。 (4) 而且’前述天線圖形亦可設於介電體構件之表層 15面，且前述導通構件係由側面導體構成，且該側面導體係 通過前述介電體構件之側面’互相導通前述介電體構件之 相對之各面上的前述天線圖形者。 (5) 另外’前述穿通孔亦可設定成其直徑越大，則導體 部分之面積越小。 20 (6)而且’前述穿通孔亦可僅内壁之一部份附加有導體 鍍層。 (7)本發明之射頻識別標籤之製造方法包含有以下步 驟：形成電氣連接於可連接晶片之晶片連接部的環狀天線 圖形；及形成可導通前述天線圖形之一部份的導通構件。 200908204 (^佌時’亦可改變魏前料賴件 整與則述晶片之阻抗匹配。 ^轉此調 發明效果 根據前述之本發 改變前述環狀導通構件，則不需 阻抗變化，而可==理性全長，即可使天線圖形之 所槔哉" 降低’並可實現可輕易地進“ Q之的之匹配難的射頻識別標籤。 丁’、 圖式簡單說明 10 15 第1圖係拉式性地顯示本發明之第i實施形態之 別標籤之結構的立體圖。 、射頻識 第2圖係第1圖所不之射頻識別標籤之A-A截面圖。 第3圖係极式性地顯示第1圖及第2圖所示之射艇 標籤之模擬模型的立體圖。 …知別 弟4圖係顯示第3圖所示之模擬模型之天線阻抗的史密 斯圖。 第5圖係顯示第3圖所示之模擬模型之天線阻抗的史密 斯圖。 第6圖係模式性地顯示縮短環形天線之環路長後之射 頻識別標籤之仿真模型的立體圖。 第7圖係顯示第6圖所示之模擬模型之天線阻抗的史密 斯圖。 山 第8圖係顯示將第3圖所示之射頻識別標籤之通孔設成 1道時之仿真模型的圖。 第9圖係顯示第8圖所示之模擬模型之天線阻抗的史密 200908204 斯圖。 第1 〇圖係模式性地顯示本發明之第2實施形態之射頻 識別4示戴之結構的立體圖。 第11圖係顯示第1 〇圖所示之射頻識別標籤之側面導體 5的位置改變時之對應電容成分(Ccp)之變化的圖表。 第12圖係模式性地顯示本發明之第3實施形態之射頻 識別4示戴之結構的立體圖。 第13圖係顯示射頻識別標籤之基板（介電體）之比介電 常數改變時之對應電容成分(Cep)之變化的圖表。 10 【資施方式】 實施發明之最佳形態 以下參照圖式說明本發明之實施形態。唯，本發明當 然不限定於以下所示之實施形態，亦可在不脫離本發明之 意旨的範圍内作各種變形來實施。 15 [1]第1實施形態 第1圖係模式性地顯示本發明之第1實施形態之射頻識 別標籤之結構的立體圖，而第2圖係第1圖所示之射頻識別 標籤之A-A截面圖。 如該等第1圖及第2圖所示，本實施形態之射頻識別標 2〇籤包含有：基板(介電體構件）1 ;導體圖形2，係在除該基板 1之長邊側之側面（一對相對之側面）外之各面之表層面上連 通形成者，也就是第2圖之截面圖中之環形（方形）天線圖形 (以下亦稱環形天線)2 ;晶片連接部(供電點)3，係在構成環 形天線2長邊之基板1面的中心附近與環形天線2電氣連接 11 200908204 者；通孔(亦稱穿通孔)4，係作為導通構件，可在複數處(在 第1圖及第2圖中為2處）互相導通形成於基板i表裡面之環 形天線2者；1C晶片或LSI等積體電路（晶片封裝體)5，係電 氣連接於前述晶片連接部3者；外包樹脂6，係包覆基板】全 5體者；接著層7，係設於外包樹脂6中欲安裝⑻在金屬等上 之面者。此外，在第1圖中，省略了晶片封裝體5的圖式， 且省略了一部份外包樹脂6的圖式。 基板1係由具狀介電常數之介電體構成，例如，可由 聚四氟乙烯(PTFE)、聚苯咐PPE)等所期望之樹脂構成。 1〇 λ線圖形2可藉由對銅或銀等金屬導體進行蚀刻或抗 蝕處理等形成。又，如第1圖所示，為可確保所期望之增益， 可使天線圖形2在基板1之表面上具有對稱之圖形，且該對 稱之圖形係由供電點3越往長度方向，寬度就變得越大者。 通孔4可藉由在貫通基板丨之孔的内壁中料體鑛層等 15形成導電層來構成，在第1圖及第2圖所示之例中，係設於 以供電點3為中心之對稱位置處。藉此，如第2圖之截面圖 所示，即可藉由通孔4,將形成於導體圖形2之一部份，即 基板1之相對之各面（表面與裡面）的導體圖形2互相電氣連 接（導通）’且包含有第1環形圖形2&，係以形成於基板丨之表 20層面（表裡面及側面）之導體圖形2為外周（長邊及短邊）者； 及第2環形圖形2b，係以形成於基板【之表層面（表裡面）的— 部份導體圖形2和通孔4為内周者。即，藉由各環形圖形^、 2b，主要可產生2個電流環路。 此外，通孔4不-定要設在對稱位置處，而設在對稱位 12 200908204 置處可比較容易確保所需之增益。又，如後述，所設置之 通孔數亦可為1道(處）。即，只要可構成共有一部份環形圖 形2(2a)之第2環形圖形2b就夠了。 在如上述構成之本例之射頻識別標籤中，並未改變第丄 5環形圖形2a之環長，而是藉由構成第2環_形以來防止增 益降低，並可在史密斯圖上，使天線阻抗朝逆時針方向^ 轉（變化），即，可增大天線圖形2之對應電容成分c卬。又， 藉由改變通孔4間之距離（縮小），即可調整對應電容成分 Cep(增大）。因此，可輕易地對具大電容電納成分之積體電 10路5(以下亦記為晶片5或標籤LSI5)進行阻抗匹配。 如第3圖所示，係將射頻識別標籤之外形尺寸設為長 69mmx寬35mmx厚5mm，且天線圖形2之厚度（導體厚）為 Ιίμηι，其導電率為5xl06S/m，將天線圖形2模型化，作為一 例，而對該天線圖形2設置通孔4時之天線阻抗的變化顯示 15 於第4圖之史密斯圖。 在該第4圖所示之史密斯圖中可知，〇所表示之位置係 顯示在未設置通孔4時之950MHz之天線阻抗，丨所表示之位 置係顯示在设置通孔4時之天線阻抗’天線阻抗係朝逆時針 方向旋轉（變化），故可增大天線圖形2之對應電容成分 20 Cep。因此，如第5圖所示，可進行與晶片5之阻抗的匹配， 且該晶片5之阻抗係與在史密斯圖上1所表示之位置為共扼 複數的關係且電容成分大者。 又，如下述之第1表及第2表所示，可知不論是在將射 頻識別標籤貼在金屬上時及存在於自由空間上時之哪一種 13 200908204 情形下，設有通孔4之增益及通信距離的下降皆較少。 [第1表] 增益比較 增益[dBi] 利用通孔匹配 將環長縮短時 無通孔，且環長 無變化 貼在金屬上時 1.93 1.11 3.38 自由空間 0.89 -2.95 1.91 5 [第2表] 通信距離比較 通信距離[m] 利用通孔匹配 將環長縮短時 無通孔，且環長 無變化 貼在金屬上時 1.873 1.695 0.179 自由空間 1.276 0.755 0.198 此外，第2表所示之通信距離(r)可藉由以下（1)式及(2) 式算出。 10【數學式1】200908204 IX. INSTRUCTIONS: TECHNICAL FIELD OF THE INVENTION The present invention relates to a 5 k method for radio frequency identification tags and radio frequency identification tags. The invention is suitable as a radio frequency identification tag for, for example, a corresponding metal that can be attached to a metal. BACKGROUND OF THE INVENTION It is well known that RFID (Radio Frequency Identification) systems are common to wireless communication systems. The 4RFID system includes radio frequency identification (also known as ^^ label) and read/write (RW)|, and the wireless (IV) device can read and write information on the RFID tag by the (4) device. In the radio frequency identification tag, a type of power supply action (called an active tag) built in the radio frequency identification tag itself, and a type in which the received electric wave from the earning device 15 is used as the driving power action is known. As a passive standard). In the case of using the passive tag UFID system, the wireless signal from the RW device is used as the drive power, and the built-in circuit such as the built-in LSI is operated to perform the corresponding reception of the wireless signal (the control signal is variously processed. By receiving the reflected wave of the wireless signal, the transmission of the RFID tag to the RW device can be performed. That is, information such as the result of the various processes described above can be carried on the reflected wave, and the paired device can be sent. In the RFID system, various frequency bands have been utilized, and the MN band (MHz to 960 MHz) has recently attracted attention. The qing band can communicate with the existing 5 200908204 13.56 MHz band or the 2.45 GHz band for long-distance communication. 868MHz is used in the United States, and 915MHz is used in the United States. In Japan, the frequency near 953MHz is used. The communication distance of the UHF band's radio frequency identification tag (hereinafter also referred to as "tag") is based on the 1C chip or 5 LSI integrated in the tag. The performance of the circuit varies from 'about 3 to 5 m. Also, the output of the RW device is about 1 watt (w). Conventional RFID tags have for example Patent Document 1 to 3. The technique of Patent Document 1 is to suppress the decrease in the communication distance even when the RFID tag is used close to the radio wave absorber, and to ensure the reliability of the communication. Patent Document 1 discloses an RFID tag including: a rectangular parallelepiped dielectric member having a predetermined dielectric constant; and a rectangular transmission/reception antenna pattern formed on the surface of the dielectric member by (4) or the like, and Electrically connected to the antenna pattern through the wafer pad 1 (: wafer 15 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ A small loop antenna is formed around the antenna pattern, and a current loop can be formed in the attached object, and a larger current loop can be formed to increase the gain of the loop antenna and lengthen the communication distance. 2. The technique of Patent Document 2 It is designed to produce a long communication distance, and it is also easy to print the label of the foot. Therefore, the label of the special body is the one that fits the third part and the second part, of which the third part is zero. The invention comprises: a plate-shaped first substrate made of a dielectric material; and a metal layer covering the first surface of the surface of the first bottom; and the second component includes a plate-shaped second base; and is provided at 6 200908204 a second metal substrate electrically connected to the metal layer of the first component to form a metal pattern of the communication antenna; a circuit chip connected to the metal pattern and capable of wireless communication through the communication antenna; and The second substrate is followed by the fifth adhesive layer on the second surface of the first surface, and the metal layer of the first component and the metal pattern of the second component are electrically connected by the conductive member. The purpose of the technique of Patent Document 3 is to provide an RFID tag capable of suppressing a change in resonance frequency or Q value even when disposed inside a device containing a metal material, and ensuring a good communication state. Therefore, in Patent Document 3, a label is formed by a substantially circular plate-shaped substrate having a loop antenna pattern and 1C, and a disk-shaped magnetic plate having a diameter substantially equal to the substrate, and by one The inductance can be easily adjusted by straightening off a portion of the surrounding of the magnetic plate. Thereby, even when a metal member or the like is disposed inside the machine, the influence of the 15 magnetic plates can be suppressed, and the inductance of the reduced metal material and the inductance of the increased magnetic half can be made mutual by setting the width of the cut portion. Offset to compensate for changes in the resonant frequency or Q value to ensure good communication. Patent Document 1: Japanese Laid-Open Patent Publication No. Hei. No. 2006-301690. When the RFID tag used in the UHF band is attached to the metal, there will be 7 200908204 5 10 15 matching with the IC chip or the integrated circuit (the following _chip), or the discrimination will be poor, resulting in the situation of the test _ . Therefore, as in the technique of the aforementioned Patent Wires 1 to 3, various attempts have been made to make the radio frequency identification mark into a ring shape, and in the radio frequency identification with a loop antenna pattern, when the wafer has a susceptance component (for The admittance imaginary part of the reciprocal of the impedance (usually expressed in (4);): When it is large, it will not be __ anti-match (10) and _ "match adjustment"). That is, since the equivalent circuit of the wafer mounted on the radio frequency identification tag can use the parallel capacitance component CeP and the parallel resistance component kiss, the susceptance component B mainly changes depending on the capacitance component (10), and when the capacitance component Ccp is too large, It will be difficult to design and adjust the matching antenna impedance. For example, as shown in Fig. 13 (specific dielectric constant versus Cep characteristic), the method of adjusting the antenna impedance is to change the specific dielectric constant of the dielectric (substrate) formed with the antenna pattern. Small), you can increase the antenna pattern = should be impedance ' and the specific dielectric constant of the dielectric body also has its narrowing limit (take the J value as the air ratio dielectric constant = 1), it will not be easy to correspond to greater than The boundary corresponds to the wafer required for the electric valley component Ccp (ES2 in Fig. 13). Further, although the matching adjustment can be performed by changing the entire length of the loop antenna pattern, the gain is lowered when the entire length of the brain ring is reached. SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object thereof is to provide a radio frequency identification tag which can suppress a decrease in gain and can be easily adjusted to match a wafer. Further, the present invention is not limited to the above-described object, and another object thereof is to exert an effect obtained by implementing each structure shown in the best mode of the invention described later, and which is an effect that cannot be obtained by the prior art. 20 200908204 Means for Solving the Problems In order to achieve the above object, the present invention uses the radio frequency identification tag and the method of manufacturing the radio frequency identification tag shown below. (1) That is, the radio frequency identification tag of the present invention includes: a wafer connection portion, a 5 system connectable to the wafer; an antenna pattern which is annular and electrically connected to the wafer connection portion; and a conduction member that is conductive One of the aforementioned antenna patterns. (2) At this time, the above-mentioned conductive members may be respectively provided at symmetrical positions centering on the wafer connecting portion. 10 (3) Further, the antenna pattern may be disposed on a surface layer of the dielectric member, and the conductive member is formed by a through hole, and the through hole is electrically connected to each other through the inside of the dielectric member. The aforementioned antenna pattern on each of the opposing faces of the member. (4) Further, the antenna pattern may be provided on the surface of the surface layer 15 of the dielectric member, and the conductive member is formed of a side conductor, and the side conduction system conducts the dielectric through the side of the dielectric member The aforementioned antenna pattern on each of the opposing faces of the body member. (5) Further, the aforementioned through-hole may be set such that the larger the diameter thereof, the smaller the area of the conductor portion. 20 (6) and the aforementioned through-holes may be provided with a conductor plating only on one of the inner walls. (7) The method of manufacturing a radio frequency identification tag of the present invention comprises the steps of: forming a loop antenna pattern electrically connected to a wafer connection portion of the connectable wafer; and forming a conduction member capable of conducting a portion of the antenna pattern. 200908204 (^佌时' can also change the impedance matching between the wafer and the wafer. ^The effect of the invention is changed according to the above-mentioned one, and the impedance change is not required, but = = Rational full length, which can make the antenna pattern reduce "lowering and can realize the difficult identification of RFID tags that can easily enter the Q. Ding', simple description of the figure 10 15 Figure 1 A perspective view showing the structure of the label of the i-th embodiment of the present invention. The radio frequency identification diagram 2 is an AA cross-sectional view of the RFID tag not shown in Fig. 1. Fig. 3 shows the polar display A perspective view of the simulation model of the boat tag shown in Fig. 1 and Fig. 2. ... The figure 4 shows the Smith chart of the antenna impedance of the simulation model shown in Fig. 3. Fig. 5 shows the figure 3 A Smith chart showing the antenna impedance of the simulation model. Fig. 6 is a perspective view schematically showing a simulation model of the RFID tag shortening the loop length of the loop antenna. Fig. 7 shows the simulation model shown in Fig. 6. Smith chart of antenna impedance Figure 8 shows the simulation model when the through-hole of the RFID tag shown in Figure 3 is set to one channel. Figure 9 shows the antenna impedance of the analog model shown in Figure 8 Smith 200908204 Fig. 1 is a perspective view schematically showing the structure of the radio frequency identification 4 of the second embodiment of the present invention. Fig. 11 is a view showing the side conductor 5 of the radio frequency identification tag shown in Fig. 1. Fig. 12 is a perspective view schematically showing the structure of the radio frequency identification 4 shown in the third embodiment of the present invention. Fig. 13 is a view showing the structure of the radio frequency identification tag. A graph showing changes in the corresponding capacitance component (Cep) when the dielectric constant of the substrate (dielectric) is changed. 10 [Effects] BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings. The present invention is of course not limited to the embodiments described below, and various modifications can be made without departing from the spirit and scope of the invention. 15 [1] First embodiment FIG. 1 schematically shows the present invention. First embodiment A perspective view of the structure of the radio frequency identification tag, and FIG. 2 is an AA cross-sectional view of the radio frequency identification tag shown in FIG. 1. As shown in the first and second figures, the radio frequency identification tag 2 of the present embodiment The label includes: a substrate (dielectric member) 1; and the conductor pattern 2 is formed on the surface of each of the surfaces other than the side (the pair of opposite sides) on the long side of the substrate 1 It is a ring-shaped (square) antenna pattern (hereinafter also referred to as a loop antenna) 2 in the cross-sectional view of Fig. 2; a wafer connection portion (power supply point) 3, which is near the center of the substrate 1 surface constituting the long side of the loop antenna 2, and a ring The antenna 2 is electrically connected to 11200908204; the through hole (also referred to as a through hole) 4 is used as a conduction member, and can be electrically connected to each other at a plurality of places (two in FIG. 1 and FIG. 2) to be formed in the surface of the substrate i. The loop antenna 2; the integrated circuit (chip package) 5 such as a 1C wafer or an LSI is electrically connected to the wafer connecting portion 3; the outer covering resin 6 is a coated substrate; all of the 5 layers; It is installed in the outer resin 6 to install (8) on the metal or the like. Further, in the first drawing, the pattern of the chip package 5 is omitted, and a part of the pattern of the outer resin 6 is omitted. The substrate 1 is made of a dielectric material having a dielectric constant, and may be made of, for example, a desired resin such as polytetrafluoroethylene (PTFE) or polyphenylene pene. The 1 λ line pattern 2 can be formed by etching or etching a metal conductor such as copper or silver. Moreover, as shown in FIG. 1, in order to ensure the desired gain, the antenna pattern 2 can have a symmetrical pattern on the surface of the substrate 1, and the symmetrical pattern is extended from the feeding point 3 to the length direction, and the width is Become bigger. The through hole 4 can be formed by forming a conductive layer on the inner wall of the hole penetrating through the substrate 中, and in the example shown in FIGS. 1 and 2, is centered on the feeding point 3. At the symmetrical position. Thereby, as shown in the cross-sectional view of FIG. 2, the conductor pattern 2 formed on one of the conductor patterns 2, that is, the opposite sides (surface and inside) of the substrate 1 can be mutually connected by the through holes 4. Electrical connection (conduction)' includes a first ring pattern 2&, wherein the conductor pattern 2 formed on the surface of the substrate 20 (inside and on the side surface) is the outer circumference (long side and short side); and the second The annular pattern 2b is formed on the surface of the substrate (the inside of the surface), and the partial conductor pattern 2 and the through hole 4 are the inner circumference. That is, two current loops can be mainly generated by the respective ring patterns ^, 2b. In addition, the through hole 4 is not necessarily set at a symmetrical position, and it is relatively easy to ensure the required gain at the position of the symmetry bit 12 200908204. Further, as will be described later, the number of through holes to be provided may be one track. That is, it suffices that the second annular pattern 2b sharing a part of the annular pattern 2 (2a) can be constructed. In the radio frequency identification tag of the present example constructed as described above, the ring length of the fifth ring pattern 2a is not changed, but the gain reduction is prevented by forming the second ring shape, and the antenna can be made on the Smith chart. The impedance is turned (changed) in the counterclockwise direction, that is, the corresponding capacitance component c卬 of the antenna pattern 2 can be increased. Further, by changing the distance (reduction) between the through holes 4, the corresponding capacitance component Cep (increase) can be adjusted. Therefore, it is possible to easily perform impedance matching on the integrated circuit 10 (hereinafter also referred to as the wafer 5 or the tag LSI 5) having a large capacitance susceptance component. As shown in Fig. 3, the external dimensions of the RFID tag are set to be 69 mm long, 35 mm wide and 5 mm thick, and the thickness of the antenna pattern 2 (conductor thickness) is Ιίμηι, and its conductivity is 5 x 106 S/m. As an example, the change in the antenna impedance when the through hole 4 is provided in the antenna pattern 2 is shown by the Smith chart in Fig. 4. As can be seen from the Smith chart shown in FIG. 4, the position indicated by 〇 shows the antenna impedance of 950 MHz when the through hole 4 is not provided, and the position indicated by 丨 shows the antenna impedance when the through hole 4 is set. Since the antenna impedance is rotated (changed) in the counterclockwise direction, the corresponding capacitance component 20 Cep of the antenna pattern 2 can be increased. Therefore, as shown in Fig. 5, the impedance of the wafer 5 can be matched, and the impedance of the wafer 5 is in a complex relationship with the position indicated by 1 on the Smith chart, and the capacitance component is large. Further, as shown in the first table and the second table described below, it is understood that the gain of the through hole 4 is provided in the case of the case where the radio frequency identification tag is attached to the metal and is present in the free space 13 200908204. And the drop in communication distance is small. [Table 1] Gain comparison gain [dBi] When there is no through hole when the ring length is shortened by through hole matching, and there is no change in the ring length when it is attached to the metal 1.93 1.11 3.38 Free space 0.89 - 2.95 1.91 5 [Table 2] Communication Distance comparison communication distance [m] When there is no through hole when the ring length is shortened by through hole matching, and there is no change in the ring length when it is attached to the metal 1.873 1.695 0.179 Free space 1.276 0.755 0.198 In addition, the communication distance shown in Table 2 (r ) can be calculated by the following formulas (1) and (2). 10【Math 1】
λ iPt'Gt^Gr^Q -m …⑴ _ ARcRa -(2) λ:波長λ iPt'Gt^Gr^Q -m (1) _ ARcRa -(2) λ: wavelength
Pt :讀寫（RW)裝置之功率 Gt :天線增益 15 q :匹配係數Pt : power of the read/write (RW) device Gt : antenna gain 15 q : matching coefficient
Pth :晶片5之最小動作之功率 Gr :標籤天線增益Pth: the power of the minimum action of the chip 5 Gr: the tag antenna gain
Rc、Xc :晶片5之電阻（電抗Zc=Rc+jXc)Rc, Xc: resistance of the wafer 5 (reactance Zc = Rc + jXc)
Ra、Xa :天線圖形之電阻（電抗Za=Ra+jXa) 14 200908204 模擬之計算條件如下面之第3表所示。 【第3表】 模擬之計算條件Ra, Xa: Resistance of the antenna pattern (reactance Za = Ra + jXa) 14 200908204 The calculation conditions for the simulation are shown in Table 3 below. [Table 3] Calculation conditions for simulation
5 此外，在前述第3表中，RCP相當於晶片5中為阻抗& 倒數之導納（Yc-l/Zc-G+jB=(l/RCp)+jc〇Ccp)的電導（g)成 分，Cep則相當於積體電路5之導納(Yc)的電納（B)成分。 又，如第6圖所示，例如將射頻識別標籤的長度由69mm 縮短為42mm，使天線圖形2之環長變短，即可如第7圖所 10示，在史密斯圖上使天線阻抗朝逆時針方向變化。此時， 如前述之第1表及第2表所示，因天線圖形2之環長變短，增 益就會降低而使通信距離變短。 此外，如第1表及第2表所示，在未設置通孔4且環長也 未調整時，增益會變最高，但晶片5之電容成分Ccp大時， 15 就會無法進行匹配，而使通信距離變短。 因此，如本例之設有通孔4者，其總合性能較高。 (通孔4為1道時） 如第8圖所示，前述通孔4數亦可為1道。此外，第8圖 所示之模型除了通孔數之外，其他皆與第3圖所示之模型相 20 同。如此，如第9圖所示，本發明人由模擬而可確認，即使 在將通孔數設成1道時，也可在史密斯圖上使天線阻抗朝逆 時針方向旋轉，且增益也不比如前述設置2道通孔4時遜色。 15 200908204 想當然，前述旋轉量（角度)係設置2道通孔4者較大。也 就是說，藉由改變通孔數，即可調整天線阻抗之電容成八5 Further, in the aforementioned third table, the RCP corresponds to the conductance (g) of the impedance & reciprocal admittance (Yc-l/Zc-G+jB=(l/RCp)+jc〇Ccp) in the wafer 5. The component, Cep, corresponds to the susceptance (B) component of the admittance (Yc) of the integrated circuit 5. Moreover, as shown in FIG. 6, for example, the length of the radio frequency identification tag is shortened from 69 mm to 42 mm, so that the loop length of the antenna pattern 2 is shortened, as shown in FIG. 7 and the antenna impedance is made on the Smith chart. Change counterclockwise. At this time, as shown in the first table and the second table described above, since the loop length of the antenna pattern 2 is shortened, the gain is lowered and the communication distance is shortened. Further, as shown in the first table and the second table, when the through hole 4 is not provided and the loop length is not adjusted, the gain is maximized. However, when the capacitance component Ccp of the wafer 5 is large, 15 cannot be matched. Make the communication distance shorter. Therefore, as in the case of the through hole 4 of this example, the total performance is high. (When the through hole 4 is one channel) As shown in Fig. 8, the number of the through holes 4 may be one. In addition, the model shown in Fig. 8 is the same as the model shown in Fig. 3 except for the number of through holes. Thus, as shown in Fig. 9, the inventors confirmed by simulation that even when the number of through holes is set to one, the antenna impedance can be rotated counterclockwise on the Smith chart, and the gain is not the same. The foregoing setting of the two through holes 4 is inferior. 15 200908204 Of course, the above-mentioned amount of rotation (angle) is larger than that of the two through holes. That is to say, by changing the number of vias, the capacitance of the antenna impedance can be adjusted to eight.
Cep之可變量。因此，可藉由增加通孔數來對應較大之對應 電容成分Cep。 5 [2]第2實施形態 第10圖係模式性地顯示本發明之第2實施形態之射頻 識別標籤之結構的立體圖，且該第10圖所示之射頻識別桿 籤係設置導體圖形(側面導體)8來代替設置前述通孔4，且言= 側面導體8係由基板1中供電點3所在之面（表面）之天線圖= 2(以供電點3為中心之對稱位置2處）的一部份向基板丨之寬 度方向延伸，且通過基板1之長邊側之側面，而與相對於前 述表面之面（裡面）的天線圖形2連通者。 即，在本例中，係藉由側面導體8通過基板丨之側面， 互相導通設於基板1之表裡面的天線圖形2,該側面導體8即 15可發揮與作為前述導通構件之通孔4同等的效果。此種結構 可在不易在基板1設置通孔4時發揮效用。此外，在第卟圖 中，S2係顯示彻!面導體8之間隔。唯，在本例中，側面導體 8不一定要在以供電點3為中心之對稱位置處，亦可只在基 板1之同一側面設置1處。 '〇 藉此，在該射頻識別標籤中，包含有以形成於基板1 之表裡面的導體圖形2為外周（長邊及短邊）之第丨環形圖 形，及以形成於基板丨之表裡面的一部份導體圖形2和側面 導體8為内周之第2環形圖形。 因此可抑制增益降低，並可在史密斯圖上，使天線 16 200908204 阻抗朝逆時針方向旋轉（變化），而可增大天線圖形2之對應 電容成分匚卬° 又，藉由改變侧面導體8間之距離S2(縮小），即可調整 對應電容成分Cep(增大）。因此，可輕易地對具大電納成分 5 之晶片5進行阻抗匹配。 舉一例來説’可將基板1之尺寸設為長70mrnX寬44rnmX 厚3.14mm，且基板1之比介電常數ε^6·05，介電損失角tanS 為0.003，天線圖形2之寬度W為25mm ’由該天線圖形2向側 面導體8延伸之導體部分的寬度為5mm，而側面導體8之間 10隔幻改變時之對應電容成分Cep之變化顯示於第11圖。 如該第11圖所示，不論是使用頻率為915MHz、953 MHz哪一者，藉由將側面導體8之間隔S2縮小，皆可增大對 應電容成分Cep。 [3]第3實施形態 15 第12圖係模式性地顯示本發明之第3實施形態之射頻 識別標籤之結構的立體圖，該第12圖所示之射頻識別標籤 6又有孔面積較前述通孔4大之四角柱狀貫通孔（穿通孔)9,且 該貫通孔9之至少任一側壁（内壁）附加有與形成於基板丨之 表裡面之天線圖形2導通的金屬鍍層（導體鍍層）91，來代替 20前述通孔4。 即，在本例中，藉由附加在貫通孔9之側壁的金屬鍍層 91，即可互相導通形成於基板1之表裡面的天線圖形2，該 金屬鍍層91可發揮與作為已述之導通構件的通孔4同等的 效果此外，在本例中，貫通孔9(金屬鍍層91)也不一定要 17 200908204 在以供電點3為中心 貫通孔9的形狀並不 狀。 之對稱位置處，亦可只設在1處。又， 限於四角柱狀，亦可為三角柱或圓柱 又’在第12圖中，a 側壁中離供電點3最遠之t屬鑛層91係附加在貫通孔9之4個 其他側壁上。又，亦可4= 一整面側壁上，亦可附加在 例如，部份附加金屬鑛層91。 大時，若在其整面R 9之面積(直徑认且側到内壁)之面積 布就容易產生从彳加金屬鑛層91，天線_2中之電流分 易產生錢，而使增益降低，所以會有只在側壁之 面之-部份附加金屬鍍層91較佳的情形。·，可在側壁 之面附加線狀金屬鍍層91。即，貫通孔9最好是設定成立直 徑越大，則導體部分之面積越小。 ,藉此，該射頻識別標籤包含有第丨環形圖形，係分別以 形成於基板1之表面的導體圖形2為長邊(相對之2邊)及短邊 15 (剩下之相對之2邊)者；及第2環形圖形，係以形成於基板i 之表面的一部份導體圖形2為長邊，且以附加於貫通孔9側 壁之金屬鍍層91為短邊者。 在如上述構成之本例之射頻識別標籤中，亦未改變第i 環形圖形之環長，而是藉由構成第2環形圖形防止增益降 20低’並可在史密斯圖上使天線阻抗朝逆時針方向旋轉（變 化）。即，可使天線圖形2之對應電容成分Cep増大。 又，藉由改變貫通孔9間（金屬鍍層91間）之距離（縮 小），可調整對應電客成分Cep(增大）。因此，可輕易地對具 大電納成分之晶片5進行阻抗匹配。此外，金屬鍍層91間之 18 200908204 距離不僅可藉由改變貫通孔9之設置位置來改變，還可藉由 改變金屬鑛層91之附加位置來改變’而不f改變貫通孔9之 ' 設置位置。 [4]其他 5 I前述實施㈣中，基本上是藉由改變設於基板！之通 孔4、與天線圖形2連通之側面導體8、或貫通孔9等導通構 件之數目或間隔，來調整天線阻抗（主要為對應電容成分 Cep) ’亦可併用其他調整方法。例如，亦可附加地改變天 線圖开>2之寬度，或改變晶片5在基板1上之搭載位置，戋改 10 變基板1之介電常數。 產業上利用之可能性 如以上詳述’’根據本發明，可抑制増益降低，並可實 現可輕易調整與所搭載之晶片之匹配調整的射頻識別標 籤’所以在無線通信技術領域，或物品之生產、庫存、流 15通管理、p〇s系統、保全系統等技術領域中極為有用。 【闽式簡單說明3 第1圖係模式性地顯示本發明之第1實施形態之射頻識 別標籤之結構的立體圖。 第2圖係第1圖所示之射頻識別標籤之A-A載面圖。 20 第3圖係模式性地顯示第1圖及第2圖所示之射頻識別 標籤之模擬模型的立體圖。 第4圖係顯示第3圖所示之模擬模型之天線阻抗的史密 斯圖。 第5圖係顯示第3圖所示之模擬模型之天線阻抗的史密 19 200908204 斯圖。 第6圖係模式性地顯示縮短環形天線之環路長後之射 頻識別標籤之仿真模型的立體圖。 第7圖係顯示第6圖所示之模擬模型之天線阻抗的史密 5 斯圖。 第8圖係顯示將第3圖所示之射頻識別標籤之通孔設成 1道時之仿真模型的圖。 第9圖係顯示第8圖所示之模擬模型之天線阻抗的史密 斯圖。 10 第10圖係模式性地顯示本發明之第2實施形態之射頻 識別標籤之結構的立體圖。 第11圖係顯示第10圖所示之射頻識別標籤之側面導體 的位置改變時之對應電容成分(Cep)之變化的圖表。 第12圖係模式性地顯示本發明之第3實施形態之射頻 15 識別標籤之結構的立體圖。 第13圖係顯示射頻識別標籤之基板（介電體）之比介電 常數改變時之對應電容成分(Cep)之變化的圖表。 20 20 200908204 【主要元件符號說明】 1…反 7...接著部 2...天線圖形 8...側面導體 2a...第1天線圖形 9_..貫通孔 2b...第2天線圖形 91…金屬鑛層 3...晶片連接部 A. ·.線 4···通孔 S2...間隔 5...積體電路 w_"寬度 6.··外包樹脂 21Cep's variable. Therefore, the corresponding corresponding capacitance component Cep can be correspondingly increased by increasing the number of via holes. [2] In the second embodiment, FIG. 10 is a perspective view schematically showing the configuration of the radio frequency identification tag according to the second embodiment of the present invention, and the radio frequency identification tag shown in FIG. 10 is provided with a conductor pattern (side view). The conductor 8 is provided instead of the through hole 4, and the side conductor 8 is an antenna pattern of the surface (surface) on which the feed point 3 is located in the substrate 1 = 2 (symmetric position 2 centered on the feed point 3) A portion extends in the width direction of the substrate , and passes through the side surface on the long side of the substrate 1 to be in communication with the antenna pattern 2 on the surface (inside) of the surface. That is, in this example, the side surface conductor 8 passes through the side surface of the substrate cymbal, and the antenna pattern 2 provided on the front surface of the substrate 1 is electrically connected to each other, and the side surface conductor 8 can be used as the through hole 4 as the conduction member. The same effect. Such a structure can be effective when it is difficult to provide the through hole 4 in the substrate 1. Further, in the figure, the S2 shows the interval of the surface conductors 8. However, in this example, the side conductors 8 do not have to be at a symmetrical position centered on the feed point 3, or may be provided only at one side of the same side of the substrate 1. In this case, the radio frequency identification tag includes a second annular pattern in which the conductor pattern 2 formed on the surface of the substrate 1 is an outer circumference (long side and short side), and is formed in the surface of the substrate A part of the conductor pattern 2 and the side conductor 8 are the second ring pattern of the inner circumference. Therefore, the gain reduction can be suppressed, and the impedance of the antenna 16 200908204 can be rotated (changed) in the counterclockwise direction on the Smith chart, and the corresponding capacitance component of the antenna pattern 2 can be increased, and the side conductor 8 can be changed. By the distance S2 (reduction), the corresponding capacitance component Cep (increase) can be adjusted. Therefore, the wafer 5 having the large susceptance component 5 can be easily impedance-matched. For example, 'the size of the substrate 1 can be set to 70mrnX width 44rnmX thickness 3.14mm, and the specific dielectric constant ε^6·05 of the substrate 1, the dielectric loss angle tanS is 0.003, and the width W of the antenna pattern 2 is 25mm 'The width of the conductor portion extending from the antenna pattern 2 to the side conductor 8 is 5 mm, and the change of the corresponding capacitance component Cep when the side conductor 8 is slid by 10 is shown in Fig. 11. As shown in Fig. 11, regardless of whether the frequency of use is 915 MHz or 953 MHz, the corresponding capacitance component Cep can be increased by reducing the interval S2 of the side conductors 8. [3] Third Embodiment FIG. 12 is a perspective view schematically showing a configuration of a radio frequency identification tag according to a third embodiment of the present invention, and the radio frequency identification tag 6 shown in FIG. 12 has a hole area larger than that described above. a four-corner column-shaped through hole (through hole) 9 in the hole 4, and at least one of the side walls (inner wall) of the through hole 9 is provided with a metal plating layer (conductor plating) which is electrically connected to the antenna pattern 2 formed on the inside of the substrate 91, instead of 20 the aforementioned through hole 4. That is, in this example, by the metal plating layer 91 attached to the side wall of the through hole 9, the antenna pattern 2 formed on the inside of the substrate 1 can be electrically connected to each other, and the metal plating layer 91 can function as a conduction member as described above. In addition, in the present example, the through hole 9 (metal plating layer 91) does not have to be 17 200908204. The shape of the through hole 9 around the feeding point 3 is not in a shape. The symmetrical position can also be set at only one place. Further, it is limited to a quadrangular prism shape, and may be a triangular column or a cylinder. In Fig. 12, the t-mine layer 91 which is the furthest from the feeding point 3 in the side wall of a is attached to the four other side walls of the through hole 9. Alternatively, it may be 4 = a full side wall, or may be attached to, for example, a portion of the additional metal ore layer 91. When it is large, if the area of the entire surface of the R 9 (diameter and side to the inner wall) is easily generated from the metal ore layer 91, the current in the antenna 2 is easy to generate money, and the gain is lowered. Therefore, there may be a case where a portion of the side wall is added with a portion of the metal plating layer 91. A linear metal plating layer 91 may be added to the surface of the side wall. That is, it is preferable that the through hole 9 is set to have a larger diameter, and the area of the conductor portion is smaller. Therefore, the RFID tag includes a second circular pattern, wherein the conductor pattern 2 formed on the surface of the substrate 1 is a long side (relative to two sides) and a short side 15 (the remaining two sides) And the second ring pattern is such that a part of the conductor pattern 2 formed on the surface of the substrate i is a long side, and the metal plating layer 91 attached to the side wall of the through hole 9 is a short side. In the radio frequency identification tag of the present example constructed as described above, the ring length of the i-th ring pattern is not changed, but the gain is reduced by 20 by forming the second ring pattern and the antenna impedance is reversed on the Smith chart. Rotate (change) in the hour hand direction. That is, the corresponding capacitance component Cep of the antenna pattern 2 can be made larger. Further, by changing the distance (reduction) between the through holes 9 (between the metal plating layers 91), the corresponding electric passenger component Cep (increased) can be adjusted. Therefore, impedance matching of the wafer 5 having a large susceptance component can be easily performed. In addition, the distance of 18 200908204 between the metal plating layers 91 can be changed not only by changing the position of the through holes 9, but also by changing the additional position of the metal ore layer 91 to change the 'setting position of the through hole 9' without changing the position of the metal ore layer 91. . [4] Others 5 I The aforementioned implementation (4) is basically set on the substrate by changing! The number of the vias 4, the side conductors 8 communicating with the antenna pattern 2, or the number or spacing of the conductive members such as the through holes 9 to adjust the antenna impedance (mainly corresponding capacitance component Cep)' may be used in combination with other adjustment methods. For example, the width of the antenna pattern > 2 may be additionally changed, or the mounting position of the wafer 5 on the substrate 1 may be changed, and the dielectric constant of the substrate 1 may be falsified. The possibility of industrial use is as described above. According to the present invention, it is possible to suppress a reduction in profit, and to realize a radio frequency identification tag that can easily adjust the matching adjustment with the mounted chip, so in the field of wireless communication technology, or an article It is extremely useful in the technical fields of production, inventory, flow 15 management, p〇s system, and security system. [Brief Description] Fig. 1 is a perspective view schematically showing the configuration of the radio frequency identification tag according to the first embodiment of the present invention. Figure 2 is an A-A map of the RFID tag shown in Figure 1. 20 Fig. 3 is a perspective view schematically showing a simulation model of the radio frequency identification tag shown in Figs. 1 and 2. Fig. 4 is a Smith chart showing the antenna impedance of the simulation model shown in Fig. 3. Figure 5 is a close-up of the Smith's impedance of the simulated model shown in Figure 3. Fig. 6 is a perspective view schematically showing a simulation model of the radio frequency identification tag after shortening the loop length of the loop antenna. Fig. 7 is a Smith chart showing the antenna impedance of the simulation model shown in Fig. 6. Fig. 8 is a view showing a simulation model when the through hole of the radio frequency identification tag shown in Fig. 3 is set to one track. Fig. 9 is a Smith chart showing the antenna impedance of the simulation model shown in Fig. 8. 10 is a perspective view schematically showing the configuration of a radio frequency identification tag according to a second embodiment of the present invention. Fig. 11 is a graph showing changes in the corresponding capacitance component (Cep) when the position of the side conductor of the radio frequency identification tag shown in Fig. 10 is changed. Fig. 12 is a perspective view schematically showing the configuration of the radio frequency 15 identification tag of the third embodiment of the present invention. Fig. 13 is a graph showing changes in the corresponding capacitance component (Cep) when the dielectric constant of the substrate (dielectric body) of the radio frequency identification tag is changed. 20 20 200908204 [Description of main component symbols] 1...reverse 7...adjacent part 2...antenna pattern 8...side conductor 2a...first antenna pattern 9_..through hole 2b...second antenna Graph 91...metal ore layer 3...wafer connecting portion A. ·.line 4···through hole S2...interval 5...integrated circuit w_"width 6.·.outsourcing resin 21