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TW200839926A - Susceptor structure in large area substrate processing system - Google Patents

Susceptor structure in large area substrate processing system Download PDF

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Publication number
TW200839926A
TW200839926A TW097106814A TW97106814A TW200839926A TW 200839926 A TW200839926 A TW 200839926A TW 097106814 A TW097106814 A TW 097106814A TW 97106814 A TW97106814 A TW 97106814A TW 200839926 A TW200839926 A TW 200839926A
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TW
Taiwan
Prior art keywords
heater
susceptor
base
pedestal
susceptor structure
Prior art date
Application number
TW097106814A
Other languages
Chinese (zh)
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TWI373817B (en
Inventor
Taek-Yong Jang
Byung-Il Lee
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Tera Semicon Corp
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Publication of TW200839926A publication Critical patent/TW200839926A/en
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Publication of TWI373817B publication Critical patent/TWI373817B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G49/00—Conveying systems characterised by their application for specified purposes not otherwise provided for
    • B65G49/05—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles
    • B65G49/06—Conveying systems characterised by their application for specified purposes not otherwise provided for for fragile or damageable materials or articles for fragile sheets, e.g. glass
    • B65G49/062—Easels, stands or shelves, e.g. castor-shelves, supporting means on vehicles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/6734—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders specially adapted for supporting large square shaped substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The invention provides a susceptor structure in a large area substrate processing system. The susceptor structure comprises a heater for providing a heat source for heating a substrate; a pre-positioned susceptor covering the upper part of the heater and bearing wafer cassettes of a plurality of substrates; and a guide susceptor surrounding the side of the heater. The susceptor structure of this invention is characterized in that heat generated by the heater can be prevented from being leaked to the side of the heater by the guide susceptor, thus avoiding micro dusts from diffusing to the inside of a processing chamber.

Description

200839926 九、發明說明： 【發明所屬之技術領域3 技術領域 基# 本發明係有關於設置於大面積基板處理系統内么 5 構造物，特別是，本發明係有關於設置於製卷官内部的 座構造物，該製程室係於玻璃基板上蒸鍍特定物質’ / 蒸鍍後之特定物質進行熱處理以製作平面顯示器|° 背景技術 ，而 1〇 最近對於平板顯示器的需求不僅是爆發性的增炉 且偏好大晝面顯示器的傾向是越來越大。因此，#辦 板顯示器製造的大面積基板處理系統的注目日益高莽σ 可薄形化、輕量化及低耗電力化之平板顯系H釋 、 名機參 括LCD(液晶顯示器）、PDP(電漿顯示面板）、〇lEiX廣 15 光顯示器）等等。200839926 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a structure that is disposed in a large-area substrate processing system, and more particularly, the present invention relates to an interior of a roll-making officer. a structure for vapor deposition of a specific substance on a glass substrate / a specific material after evaporation to heat-treat to produce a flat panel display | ° background technology, and the recent demand for flat panel displays is not only an explosive increase The tendency of furnaces to prefer large-faced displays is growing. Therefore, the large-area substrate processing system manufactured by the # display panel is attracting more and more attention. The thin-film, low-power and low-power-conducting flat panel display system, LCD (liquid crystal display), and PDP ( Plasma display panel), 〇lEiX wide 15 light display) and so on.

平板顯示器製造時所使用之太面積基板處斑系# 致區分為蒸鍍裝置及熱處理裝置。 $ 蒸鍍裝置係作為負責形成平板顯示器的核心 構造之 明傳導層、絕緣層、金屬層或矽層的形成階段之震置，包 20 括LPCVD(低壓化學蒸鍍）、PECVD(電漿強化之化學;篆_ 等之化學蒸鍍裝置，及濺鍍等之物理蒸鍍裝置。又 八熱處 理裝置係蒸鍍製程後負責隨後的退火階段之裝置。 例如，關於LCD方面，代表性的蒸鍍裝置有薄膜带曰 體(TFT)的非晶質矽蒸鍍裝置，而代表性的熱處理裝置有= 200839926 前述非晶質矽製成為多晶矽的裝置。 為進行如此之蒸鍍及熱處理製程，玻璃基板必需加熱 至適當的溫度。因此，通常在製程室内設置有載置玻璃基 板的基座構造物，此種基座構造物内設有作為發熱體的加 5 熱器，且構成為可加熱裝設有載置於基座上之複數玻璃基 板的晶舟(boat)。換言之，基座構造物具有在製程室内支持 且加熱玻璃基板的作用。 第1圖係顯示習知基座構造物之構造的截面圖。 如第1圖所示’大面積基板處理系統之製程室1的内側 10下部設有板狀的加熱器2，而加熱器2上部設有基座3。基座 3之上部載置裝設有複數玻璃基板之晶舟（未顯示）。一旦晶 舟載置於基座上，便使加熱器2運作而一邊加熱玻璃基板一 邊進行蒸鍍或熱處理製程。 但，第1圖所示之習知基座構造物有以下的問題。 15 首先，加熱器產生的熱係經由基座而傳導至玻璃基 板，然由於一部份的熱會由加熱器側面排出而造成浪費， 而有加熱器之熱效率低下的問題點。 又，有加熱器運作中發生的微細粉塵經由加熱器側面 擴散到玻璃基板的問題點。於麟及減理過程中 ，若是 由^熱器所排放出的微細粉塵落於玻璃基板上，則平板顯 不器的特性有大幅降低之虞。 再者，由於基座係由一個單一板所構成 ，故在裝設於 ，座構w物内的加熱H不運作的情況下，有加熱器替換不 容易的問題點。 20 200839926 i:發明内容3 發明欲解決之課題 為解決前述問題點所作成之本發明之目的為提供一種 藉由採用完全包覆加熱器上面部及側面部之前導基座及引 5 導基座的構成方式，提高熱效率且阻斷微細粉塵的擴散、 加熱器替換容易之設置於大面積基板處理系統内的基座構 造。 解決課題之手段 為了達成前述目的，本發明之設置於大面積基板處理 10 系統内之基座構造物之特徵在於包含：提供用以加熱基板 之熱源的加熱器；覆蓋於前述加熱器之上部且載置前述基 板之前導基座；及圍繞前述加熱器之側面的引導基座。 於此，前述引導基座由可各自分離之三個部份所構 成，且前述三個部份係一個中央部份及兩個側部份，而前 15 述兩個側部份係相互對稱之構造且配置於前述中央部份之 兩側。 前述中央部份之下部可形成有與前述引導基座結合的 突起。 前述引導基座可包含：一對可各自分離之本體，係相 20 互對稱之構造且對向配置，並且其各自之端部密合者；及 支持棒，係連結且支持前述本體之兩端者。 前述本體之兩端上部可形成有凹溝，以與前述前導基 座結合。 前述前導基座及前述引導基座係可由石英、陶瓷或石 200839926 墨製成。 發明的效果 本發明之基座構造物採用完全包覆加熱器上面部及4 個侧面部之前導基座及引導基座的構成方式，因此具有加 5熱斋的熱效率咼且阻斷微細粉塵的擴散、加熱器替換容易 之效果。 t實施方式2 實施發明之最佳形態 以下’參照附加圖式來詳細說明本發明之構造。 10 第2圖係顯示本發明一實施形態之基座構造物之構造 的分解立體圖。 本發明的基座構造物之基本構造為：提供用以加熱基 板之熱源的加熱器1〇〇 ;由兩個本體所構成且圍繞加熱器 100之四個側面之引導基座2〇〇 ;及由三個部份所構成並覆 15蓋加熱器10〇之上面部的前導基座300。引導基座300上載置 裝設有複數基板的晶舟（未顯示）。 如圖所示，加熱器1〇〇係以複數板狀發熱體層疊之構造 所形成者。 如鈾述般限制構成引導基座2〇〇之本體及構成前導基 2〇座300之部份的數目是不必要的。例如，隨著大面積基板處 理系統之尺寸的增加，本體及部份之數目亦可增加。 引導基座200及前導基座300係以石英或陶瓷等耐熱性 優異之材質製造為佳。此乃為使基座不會因加熱器產生的 熱而發生變形。但，考量熱傳導性時，引導基座2〇〇及前導 200839926 基座300可用石墨製造。 第3圖係顯示構成引導基座200之相互對稱的二個部份 之中，一個部份220之構造的立體圖。 如圖所示’引導基座200係以形成「c」之形態的一對 5本體220所構成。即，將一對本體220以相互面對面的方式 對向配置之後，一旦結合該對本體220之各端部，即完成引 導基座200。 此時，以藉由一對本體220，使加熱器的四個侧面完全 被圍繞為佳。 10 本體220設有連結該本體兩端的支持棒240。支持棒240 係設置於本體220之短邊部之内 '最上部的附近，而不與加 熱器100接觸。 藉由結合一對本體220而完成引導基座2〇〇時，連結本 體220的支持棒240係相互平行。 15 第4A圖係顯示前導基座的中央部份320之構造的立體 圖，第4B圖係顯示韵導基座的侧部份之構造的立體圖。 如圖所示，前導基座300係由具有長方形板狀的一個中 央部份320，及具有長方形板狀且形成相互對稱的二個侧部 fa 380所構成。二個侧部份380係結合於中央部份32〇的兩 20 側。 此時，前導基座300係以形成為可充份覆蓋加熱器1〇〇 上部之全體的尺寸為佳。 前導基座之中央部份320形成有用以與引導基座之本 體220結合之突起340，且突起34〇形成於中央部份32〇的下 200839926 部，並以形成於四個角點之附近為佳。 此時，為使引導基座200及前導基座300結合，引導基 座200之本體220之兩端的上部形成有嵌合突起340的凹溝 260(見第3圖）。 5 於此，凹溝26〇係以形成於接近本體220的短邊部與支 持棒240連結之區域的位置為佳。 因此，結合一對本體220而完成引導基座200後，使前 導基座300結合於引導基座200之時，形成於前導基座3〇〇之 下部的突起340嵌合於形成在引導基座200的凹溝260。此 10時，在突起340嵌合於凹溝260的狀態下，支持棒240接觸前 導基座300的下部面，且支持前導基座3〇〇。 產業上利用的可能性 如前述’由完全圍繞加熱器上面部及四個側面部之複 數部份所構成之方式的本發明之基座構造物，相較於以單 15 一部份構成僅覆蓋加熱器的上面部之習知方式，有下列優 點。 首先’異於習知方式，由於基座構造物完全圍繞加熱 器的上面部及四個側面部，故加熱器的熱完全使用於基板 之加熱，可提咼加熱器的熱效率。同時，由於使加熱器產 20生的微細粉塵的影響最小化，故平板顯示器之特性可向上 提升。 又，異於習知方式，由於基座構造物係由複數之部份 所構成，故加熱器故障時可容易替換。 因此，本發明之產業利用性可謂極為優異。 10 200839926 另一方面，雖然本發明說明内藉由數個較佳實施形態 來記載，但熟習此技者應了解在不偏離附加申請專利範圍 斤揭示之本發明之範，及概念之情形下，可進行許多的變 換及修正。 【圖式簡單說明1 第1圖係顯示習知基座構造物之構造的截面圖。 第2圖係顯示本發明之實施形態之基座構造物之構造 的分解立體圖。 第3圖係顯示引導基座的本體之構造的立體圖。 弟4 A圖係顯不别導基座中央部份之構造的立體圖。 第4B圖係顯示前導基座側部份之構造的立赠圖。 【主要元件符號說明】 1...製程室 240…支持棒 2…办2熱器 260···凹溝 3···基座 300…前導基座 100...加熱器 320…中央部份 200…引導基座 340···突起 220…部份、本體 380· ··側部份In the manufacture of flat panel displays, the area of the substrate at the area of the substrate is divided into a vapor deposition device and a heat treatment device. $ The vapor deposition device is used as a reflection layer for forming the conductive layer, the insulating layer, the metal layer or the germanium layer of the core structure of the flat panel display, and includes 20 LPCVD (low pressure chemical vapor deposition) and PECVD (plasma strengthening). a chemical vapor deposition device such as chemistry, etc., and a physical vapor deposition device such as sputtering. The eight heat treatment devices are devices responsible for the subsequent annealing stage after the vapor deposition process. For example, regarding the LCD, a representative vapor deposition device An amorphous tantalum vapor deposition apparatus having a film with a germanium (TFT), and a representative heat treatment apparatus has a device in which the amorphous germanium is made of polycrystalline germanium as follows: 200839926. For such an evaporation and heat treatment process, a glass substrate is required. The heating is carried out to an appropriate temperature. Therefore, a pedestal structure on which a glass substrate is placed is usually provided in the process chamber, and the susceptor structure is provided with a heating device as a heating element, and is configured to be heatably mounted. A boat for a plurality of glass substrates placed on a susceptor. In other words, the pedestal structure has the function of supporting and heating the glass substrate in the process chamber. Fig. 1 shows a conventional pedestal structure A cross-sectional view of the structure of the object. As shown in Fig. 1, a plate-shaped heater 2 is provided at the lower portion of the inner side 10 of the process chamber 1 of the large-area substrate processing system, and a susceptor 3 is provided at the upper portion of the heater 2. A wafer boat (not shown) provided with a plurality of glass substrates is placed on the upper portion. Once the wafer boat is placed on the susceptor, the heater 2 is operated to perform vapor deposition or heat treatment while heating the glass substrate. The conventional pedestal structure shown in Fig. 1 has the following problems. 15 First, the heat generated by the heater is conducted to the glass substrate via the susceptor, but since a part of the heat is discharged from the side of the heater, waste is caused. There is a problem that the thermal efficiency of the heater is low. In addition, there is a problem that the fine dust generated during the operation of the heater is diffused to the glass substrate through the side of the heater. In the process of the forest and the reduction process, if it is discharged by the heater When the fine dust falls on the glass substrate, the characteristics of the flat panel display are greatly reduced. Further, since the pedestal is composed of a single plate, the heating H installed in the w structure is not Operational situation Next, there is a problem that the heater replacement is not easy. 20 200839926 i: SUMMARY OF THE INVENTION The object of the present invention is to solve the above problems. The object of the present invention is to provide a method for completely covering the upper surface of the heater and The configuration of the front side guide base and the lead guide base to improve the thermal efficiency, to block the diffusion of fine dust, and to facilitate the replacement of the heater in the pedestal structure provided in the large-area substrate processing system. In view of the foregoing, the susceptor structure of the present invention disposed in the large-area substrate processing system 10 is characterized by comprising: a heater for supplying a heat source for heating the substrate; covering the upper portion of the heater and placing the substrate a pedestal; and a guiding base surrounding the side of the heater. The guiding base is composed of three parts that can be separated from each other, and the three parts are a central part and two side parts. And the two side portions of the first 15 are symmetrically arranged and disposed on both sides of the central portion. The lower portion of the central portion may be formed with a projection that is coupled to the aforementioned guide base. The guiding base may include: a pair of bodies that can be separated from each other, the phases 20 are mutually symmetrical and arranged oppositely, and the respective ends thereof are in close contact; and the supporting rods are connected and support the two ends of the body By. A groove may be formed in an upper portion of both ends of the body to be coupled to the foregoing leading base. The foregoing lead pedestal and the aforementioned guiding pedestal may be made of quartz, ceramic or stone 200839926 ink. Advantageous Effects of Invention The susceptor structure of the present invention adopts a configuration in which the upper surface of the heater and the front side pedestal and the guide pedestal of the four side portions are completely covered, thereby having the thermal efficiency of adding 5 heat and blocking fine dust. The effect of diffusion and heater replacement is easy. t EMBODIMENT 2 BEST MODE FOR CARRYING OUT THE INVENTION The structure of the present invention will be described in detail below with reference to the accompanying drawings. Fig. 2 is an exploded perspective view showing the structure of a susceptor structure according to an embodiment of the present invention. The basic structure of the susceptor structure of the present invention is: a heater 1 提供 for supplying a heat source for heating the substrate; a guiding pedestal 2 由 which is composed of two bodies and surrounds four sides of the heater 100; The front guide base 300 is composed of three parts and covers the upper surface of the heater 10〇. A guide boat (not shown) provided with a plurality of substrates is mounted on the guide base 300. As shown in the figure, the heater 1 is formed by a structure in which a plurality of plate-shaped heating elements are stacked. It is not necessary to limit the number of the body constituting the guiding base 2 and the portion constituting the leading base 2 socket 300 as in the case of uranium. For example, as the size of a large area substrate processing system increases, the number of bodies and portions can also increase. The guide base 200 and the lead guide base 300 are preferably made of a material having excellent heat resistance such as quartz or ceramic. This is to prevent the base from being deformed by the heat generated by the heater. However, when considering thermal conductivity, the guide base 2 and the front guide 200839926 base 300 can be made of graphite. Fig. 3 is a perspective view showing the configuration of one portion 220 among the two portions constituting the mutual symmetry of the guide base 200. As shown in the figure, the guide base 200 is constituted by a pair of body bodies 220 in the form of "c". That is, after the pair of bodies 220 are opposed to each other in such a manner as to face each other, once the respective ends of the pair of the bodies 220 are joined, the guiding base 200 is completed. At this time, it is preferable to completely surround the four sides of the heater by the pair of bodies 220. 10 The body 220 is provided with a support rod 240 that connects the two ends of the body. The support rod 240 is disposed in the vicinity of the uppermost portion of the short side portion of the body 220 without being in contact with the heater 100. When the guide base 2 is completed by joining the pair of bodies 220, the support bars 240 that connect the body 220 are parallel to each other. 15 Fig. 4A is a perspective view showing the structure of the central portion 320 of the lead pedestal, and Fig. 4B is a perspective view showing the configuration of the side portion of the gyroscopic base. As shown, the leading base 300 is composed of a central portion 320 having a rectangular plate shape and two side portions fa 380 having a rectangular plate shape and symmetrical with each other. The two side portions 380 are joined to the two 20 sides of the central portion 32A. At this time, the leading base 300 is preferably formed to have a size sufficient to cover the entire upper portion of the heater 1〇〇. The central portion 320 of the leading base forms a protrusion 340 for engaging with the body 220 of the guiding base, and the protrusion 34 is formed at the lower portion 200839926 of the central portion 32〇, and is formed near the four corner points. good. At this time, in order to join the guide base 200 and the front guide base 300, the upper portion of both ends of the main body 220 of the guide base 200 is formed with a groove 260 for fitting the projection 340 (see Fig. 3). Here, the groove 26 is preferably formed at a position close to a region where the short side portion of the main body 220 is coupled to the support rod 240. Therefore, when the guide base 200 is completed in combination with the pair of bodies 220, when the front guide base 300 is coupled to the guide base 200, the protrusions 340 formed on the lower portion of the front guide base 3 are fitted to the guide base. A groove 260 of 200. At 10 o'clock, in a state where the projection 340 is fitted into the recess 260, the support bar 240 contacts the lower surface of the front guide base 300 and supports the front guide base 3''. The possibility of industrial use is as described above, and the susceptor structure of the present invention, which is constituted by a plurality of portions which completely surround the upper surface portion of the heater and the four side portions, is covered only by a single portion 15 The conventional method of the upper face of the heater has the following advantages. First, unlike the conventional method, since the susceptor structure completely surrounds the upper surface portion and the four side portions of the heater, the heat of the heater is completely used for heating the substrate, and the thermal efficiency of the heater can be improved. At the same time, the characteristics of the flat panel display can be improved upwards by minimizing the influence of the fine dust generated by the heater. Further, unlike the conventional method, since the pedestal structure is composed of a plurality of parts, the heater can be easily replaced in the event of a failure. Therefore, the industrial applicability of the present invention is extremely excellent. In the meantime, although the description of the present invention has been described in terms of several preferred embodiments, those skilled in the art should understand that, without departing from the scope and concept of the invention disclosed in the appended claims. Many changes and modifications can be made. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing the structure of a conventional pedestal structure. Fig. 2 is an exploded perspective view showing the structure of a susceptor structure according to an embodiment of the present invention. Fig. 3 is a perspective view showing the configuration of the body of the guiding base. The 4A picture shows a perspective view of the structure of the central portion of the base. Fig. 4B is a diagram showing the construction of the side portion of the leading base. [Description of main component symbols] 1...Processing chamber 240...Support rod 2...2 Heater 260···Groove 3···Base 300...Front base 100...Heat 320...Center part 200...guide base 340···protrusion 220...part, body 380···side part

Claims (1)

200839926 十、申請專利範圍： 1· 一種基座構造物，係設置於大面積基板處理系統内者， 其特徵在於該基座構造物包含： 加熱器，係提供用以加熱基板之熱源者； 5 前導基座，係覆蓋於前述加熱器之上部，且載置前述基 板者；及 引導基座，係圍繞前述加熱器之侧面者。 2·如申請專利範圍第1項之基座構造物，其中前述引導基座 由可各自分離之三個部份所構成，且前述三個部份係一 10 個中央部份及兩個側部份，而前述兩個側部份係相互對 稱之構造且配置於前述中央部份之兩側。 3·如申請專利範圍第2項之基座構造物，其中前述中央部份 之下部形成有與前述引導基座結合的突起。 4.如申ό青專利範圍第1項之基座構造物，其中前述引導基座 15 包含： 一對可各自分離之本體，係相立對稱之構造且對向配 置’並且其各自之端部密合者；及 支持棒，係連結且支持前述本體之兩端者。 5·如申請專利範圍第4項之基座構造物，其中前述本體之兩 20 端上部形成有凹溝，以與前述前導基座結合。 6.如申請專利範圍第1項之基座構造物，其中前述前導基座 及前述引導基座係由石英、陶瓷戒石墨製成。 12200839926 X. Patent Application Range: 1. A pedestal structure, which is disposed in a large-area substrate processing system, characterized in that the pedestal structure comprises: a heater for providing a heat source for heating the substrate; The leading base covers the upper portion of the heater and mounts the substrate; and the guiding base surrounds the side of the heater. 2. The susceptor structure of claim 1, wherein the guiding base is composed of three parts that are separable, and the three parts are a central portion and two side portions. And the two side portions are symmetrical to each other and disposed on both sides of the central portion. 3. The susceptor structure of claim 2, wherein the lower portion of the central portion is formed with a protrusion that is coupled to the guiding base. 4. The susceptor structure according to claim 1, wherein the guiding base 15 comprises: a pair of bodies which can be separated from each other, and which are symmetrical and arranged opposite each other and their respective ends The occupant; and the support bar are connected and support both ends of the body. 5. The susceptor structure of claim 4, wherein the upper ends of the two ends of the body are formed with grooves to be coupled with the front guide base. 6. The susceptor structure of claim 1, wherein the front pedestal and the guiding pedestal are made of quartz, ceramic or graphite. 12
TW097106814A 2007-02-28 2008-02-27 Susceptor structure in large area substrate processing system TWI373817B (en)

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TWI716943B (en) * 2018-07-24 2021-01-21 美商應用材料股份有限公司 A pedestal for a thermal treatment chamber

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KR101224520B1 (en) * 2012-06-27 2013-01-22 (주)이노시티 Apparatus for process chamber
KR102408403B1 (en) * 2015-11-04 2022-06-14 (주)포인트엔지니어링 Susceptor and Vaccum chamber including the same

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JP2546414B2 (en) * 1990-07-06 1996-10-23 日新電機株式会社 Vapor phase growth equipment
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TWI412621B (en) * 2004-07-16 2013-10-21 Applied Materials Inc Shadow frame with mask panels
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TWI716943B (en) * 2018-07-24 2021-01-21 美商應用材料股份有限公司 A pedestal for a thermal treatment chamber

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