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TW200721260A - Substrate processing method, photomask manufacturing method, photomask and device manufacturing method - Google Patents

Substrate processing method, photomask manufacturing method, photomask and device manufacturing method

Info

Publication number
TW200721260A
TW200721260A TW095142382A TW95142382A TW200721260A TW 200721260 A TW200721260 A TW 200721260A TW 095142382 A TW095142382 A TW 095142382A TW 95142382 A TW95142382 A TW 95142382A TW 200721260 A TW200721260 A TW 200721260A
Authority
TW
Taiwan
Prior art keywords
photomask
pattern
manufacturing
substrate
line width
Prior art date
Application number
TW095142382A
Other languages
Chinese (zh)
Inventor
Shigeru Hirukawa
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200721260A publication Critical patent/TW200721260A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

A device line width characteristic is predicted, based on the sharp characteristic of a projection image of a prescribed pattern (steps (104-110)), and exposure conditions of the pattern are adjusted, based on the predicted device line width characteristic (step (112)). Then, exposure is performed under the adjusted exposure conditions, namely, patterning of a resist on a substrate is performed by using the projection image of the pattern (step (114)). A resist pattern satisfying a desired device line width characteristic is formed on the substrate by developing the substrate after such patterning. Therefore, the pattern after etching can be formed with a desired line width by etching the substrate by using the resist pattern as a mask.
TW095142382A 2005-11-16 2006-11-16 Substrate processing method, photomask manufacturing method, photomask and device manufacturing method TW200721260A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005332236 2005-11-16

Publications (1)

Publication Number Publication Date
TW200721260A true TW200721260A (en) 2007-06-01

Family

ID=38048624

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095142382A TW200721260A (en) 2005-11-16 2006-11-16 Substrate processing method, photomask manufacturing method, photomask and device manufacturing method

Country Status (6)

Country Link
EP (1) EP1953806A1 (en)
JP (1) JP4968589B2 (en)
KR (1) KR20080068820A (en)
CN (1) CN101278375B (en)
TW (1) TW200721260A (en)
WO (1) WO2007058240A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI471706B (en) * 2009-11-16 2015-02-01 Ushio Electric Inc Alignment mark detection method

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5398318B2 (en) * 2009-03-24 2014-01-29 株式会社東芝 Exposure apparatus and method for manufacturing electronic device
JP4921512B2 (en) * 2009-04-13 2012-04-25 キヤノン株式会社 Exposure method, exposure apparatus, and device manufacturing method
JP5673947B2 (en) * 2011-03-01 2015-02-18 大日本印刷株式会社 Mask pattern correction method, program, and photomask using the correction method
CN102253607B (en) * 2011-08-15 2012-10-10 北京理工大学 Method for optimizing coherent factor of photoetching machine lighting system
KR102377771B1 (en) * 2014-06-13 2022-03-23 인텔 코포레이션 Ebeam staggered beam aperture array
US9512517B2 (en) * 2015-01-23 2016-12-06 Varian Semiconductor Equipment Associates, Inc. Multiple exposure treatment for processing a patterning feature
KR102475973B1 (en) * 2015-03-31 2022-12-08 도쿄엘렉트론가부시키가이샤 Homogenization of exposure dose through rotation, translation, and variable processing conditions
JP6491974B2 (en) * 2015-07-17 2019-03-27 日立化成株式会社 EXPOSURE DATA CORRECTION DEVICE, WIRING PATTERN FORMING SYSTEM, AND WIRING BOARD MANUFACTURING METHOD
WO2017102321A1 (en) * 2015-12-14 2017-06-22 Cymer, Llc Optimization of source and bandwidth for new and existing patterning devices
DE102017220872B4 (en) * 2017-11-22 2022-02-03 Carl Zeiss Smt Gmbh Method and system for qualifying a mask for microlithography
CN111025842B (en) * 2019-12-26 2023-06-20 云谷（固安）科技有限公司 Mask plate, splicing exposure method and substrate
CN113707541B (en) * 2021-09-28 2024-06-14 中国科学院半导体研究所 Graph transferring method
CN115494695B (en) * 2022-08-30 2024-08-06 广州新锐光掩模科技有限公司 Device and method for correcting photomask pattern position deviation

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2830492B2 (en) 1991-03-06 1998-12-02 株式会社ニコン Projection exposure apparatus and projection exposure method
EP0529971B1 (en) 1991-08-22 2003-07-23 Nikon Corporation High resolution printing technique by using a mask pattern adapted to the technique
JP3287017B2 (en) * 1992-07-10 2002-05-27 株式会社ニコン Measurement method of imaging characteristics
JP3255312B2 (en) 1993-04-28 2002-02-12 株式会社ニコン Projection exposure equipment
CN1244018C (en) 1996-11-28 2006-03-01 株式会社尼康 Expoure method and equipment producing method
JP4029182B2 (en) 1996-11-28 2008-01-09 株式会社ニコン Exposure method
JP2000505958A (en) 1996-12-24 2000-05-16 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Two-dimensional balance positioning device having two article holders and lithographic device having this positioning device
JP4210871B2 (en) 1997-10-31 2009-01-21 株式会社ニコン Exposure equipment
US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
JP4264676B2 (en) 1998-11-30 2009-05-20 株式会社ニコン Exposure apparatus and exposure method
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
KR100841147B1 (en) 1998-03-11 2008-06-24 가부시키가이샤 니콘 Laser apparatus, apparatus and method for irradiating ultravilolet light , and apparatus and method for detecting pattern of object
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
JP4018309B2 (en) * 2000-02-14 2007-12-05 松下電器産業株式会社 Circuit parameter extraction method, semiconductor integrated circuit design method and apparatus
JP3631094B2 (en) * 2000-03-30 2005-03-23 キヤノン株式会社 Projection exposure apparatus and device manufacturing method
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
JP2002198303A (en) 2000-12-27 2002-07-12 Nikon Corp Aligner, optical characteristic measuring method and method for manufacturing device
JP2002075815A (en) * 2000-08-23 2002-03-15 Sony Corp Pattern tester and aligner control system using the same
US6625497B2 (en) * 2000-11-20 2003-09-23 Applied Materials Inc. Semiconductor processing module with integrated feedback/feed forward metrology
JP2002231619A (en) 2000-11-29 2002-08-16 Nikon Corp Optical illumination equipment and aligner equipped with the same
WO2002069049A2 (en) 2001-02-27 2002-09-06 Asml Us, Inc. Simultaneous imaging of two reticles
JP2002270586A (en) 2001-03-08 2002-09-20 Tokyo Electron Ltd Etching method of organic based insulating film and dual damascene process
JP4158384B2 (en) * 2001-07-19 2008-10-01 株式会社日立製作所 Semiconductor device manufacturing process monitoring method and system
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
JP3997066B2 (en) * 2001-08-20 2007-10-24 株式会社日立製作所 Process variation monitoring system and method using electron beam
KR100429879B1 (en) * 2001-09-19 2004-05-03 삼성전자주식회사 Exposure method for correction of line width variation occurred during development process in fabricating photomask and recording medium in which the exposure method is recorded
JP3592666B2 (en) * 2001-12-04 2004-11-24 株式会社東芝 Exposure mask pattern correction method, program, mask pattern formation method, and semiconductor device manufacturing method
JP4034975B2 (en) * 2002-02-13 2008-01-16 株式会社ルネサステクノロジ Manufacturing method of semiconductor device
JP2004085612A (en) * 2002-08-22 2004-03-18 Matsushita Electric Ind Co Ltd Halftone phase shift mask, its manufacturing method and method for forming pattern using same
JP4302965B2 (en) * 2002-11-01 2009-07-29 株式会社日立ハイテクノロジーズ Semiconductor device manufacturing method and manufacturing system thereof
SG2010050110A (en) 2002-11-12 2014-06-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
SG2011031200A (en) 2002-12-10 2014-09-26 Nippon Kogaku Kk Exposure apparatus and device manufacturing method
ATE424026T1 (en) 2002-12-13 2009-03-15 Koninkl Philips Electronics Nv LIQUID REMOVAL IN A METHOD AND DEVICE FOR RADIATION OF STAINS ON A LAYER
KR101194449B1 (en) 2003-05-06 2012-10-24 가부시키가이샤 니콘 Projection optical system, and exposure apparatus and method of manufacturing micro device
US7348575B2 (en) 2003-05-06 2008-03-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
JP4065817B2 (en) * 2003-08-12 2008-03-26 株式会社日立ハイテクノロジーズ Exposure process monitoring method
WO2005036619A1 (en) 2003-10-09 2005-04-21 Nikon Corporation Illumination optical device, and exposure device and method
JP4084312B2 (en) * 2004-01-16 2008-04-30 株式会社東芝 Lithography process evaluation system, lithography process evaluation method, exposure apparatus evaluation method, mask pattern design method, and semiconductor device manufacturing method
JP2005303088A (en) * 2004-04-13 2005-10-27 Oki Electric Ind Co Ltd Plasma processing apparatus and resist trimming method
JP2005327807A (en) 2004-05-12 2005-11-24 Sony Corp Sheet type washing apparatus and its washing method
US7960078B2 (en) * 2004-11-16 2011-06-14 Tokyo Electron Limited Exposure condition setting method, substrate processing device, and computer program

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI471706B (en) * 2009-11-16 2015-02-01 Ushio Electric Inc Alignment mark detection method

Also Published As

Publication number Publication date
JPWO2007058240A1 (en) 2009-05-07
WO2007058240A1 (en) 2007-05-24
CN101278375A (en) 2008-10-01
JP4968589B2 (en) 2012-07-04
EP1953806A1 (en) 2008-08-06
KR20080068820A (en) 2008-07-24
CN101278375B (en) 2010-12-22

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