Nothing Special   »   [go: up one dir, main page]

TW200602154A - Chemical mechanical polishing pad and chemical mechanical polishing method - Google Patents

Chemical mechanical polishing pad and chemical mechanical polishing method

Info

Publication number
TW200602154A
TW200602154A TW094116536A TW94116536A TW200602154A TW 200602154 A TW200602154 A TW 200602154A TW 094116536 A TW094116536 A TW 094116536A TW 94116536 A TW94116536 A TW 94116536A TW 200602154 A TW200602154 A TW 200602154A
Authority
TW
Taiwan
Prior art keywords
chemical mechanical
mechanical polishing
polishing
polishing surface
grooves
Prior art date
Application number
TW094116536A
Other languages
Chinese (zh)
Inventor
Hiroshi Shiho
Hiroyuki Tano
Yukio Hosaka
Hideki Nishimura
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200602154A publication Critical patent/TW200602154A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A chemical mechanical polishing pad having a polishing surface, a non-polishing surface opposite to the polishing surface and a side surface for defining these surfaces, the polishing surface having (i) a first group of grooves which intersect a single virtual straight line extending from the center toward the peripheral portion of the polishing surface and do not cross one another, or a single first spiral groove which expands gradually from the center portion toward the peripheral portion of the polishing surface, and (ii) a second group of grooves which extend from the center portion toward the peripheral portion of the polishing surface, intersect the first group of grooves or the first spiral groove and do not cross one another. Since this chemical mechanical polishing pad fully suppresses the occurrence of a scratch on the polished surface and has an excellent polishing rate, it is advantageously used in a chemical mechanical polishing method.
TW094116536A 2004-05-20 2005-05-20 Chemical mechanical polishing pad and chemical mechanical polishing method TW200602154A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004149884 2004-05-20

Publications (1)

Publication Number Publication Date
TW200602154A true TW200602154A (en) 2006-01-16

Family

ID=34936689

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094116536A TW200602154A (en) 2004-05-20 2005-05-20 Chemical mechanical polishing pad and chemical mechanical polishing method

Country Status (4)

Country Link
US (1) US20050260929A1 (en)
KR (1) KR20060046093A (en)
CN (1) CN1864929A (en)
TW (1) TW200602154A (en)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7704125B2 (en) 2003-03-24 2010-04-27 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US7377840B2 (en) 2004-07-21 2008-05-27 Neopad Technologies Corporation Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs
US9278424B2 (en) 2003-03-25 2016-03-08 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
US8864859B2 (en) 2003-03-25 2014-10-21 Nexplanar Corporation Customized polishing pads for CMP and methods of fabrication and use thereof
JP2007081322A (en) * 2005-09-16 2007-03-29 Jsr Corp Method for manufacturing chemical-mechanical polishing pad
US7329174B2 (en) * 2004-05-20 2008-02-12 Jsr Corporation Method of manufacturing chemical mechanical polishing pad
TWI385050B (en) 2005-02-18 2013-02-11 Nexplanar Corp Customized polishing pads for cmp and methods of fabrication and use thereof
KR100721196B1 (en) * 2005-05-24 2007-05-23 주식회사 하이닉스반도체 Polishing pad and using chemical mechanical polishing apparatus
TW200744786A (en) 2005-12-28 2007-12-16 Jsr Corp Chemical mechanical polishing pad and chemical mechanical polishing method
EP1975985A4 (en) * 2006-01-25 2011-08-10 Jsr Corp Chemical mechanical polishing pad and method for manufacturing same
US20080220702A1 (en) * 2006-07-03 2008-09-11 Sang Fang Chemical Industry Co., Ltd. Polishing pad having surface texture
US20080003935A1 (en) * 2006-07-03 2008-01-03 Chung-Chih Feng Polishing pad having surface texture
JP5347524B2 (en) * 2008-01-24 2013-11-20 Jsr株式会社 Composition for forming polishing layer of chemical mechanical polishing pad, chemical mechanical polishing pad, and chemical mechanical polishing method
JP2009220265A (en) * 2008-02-18 2009-10-01 Jsr Corp Chemical machinery polishing pad
US9180570B2 (en) 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
KR20110100080A (en) * 2010-03-03 2011-09-09 삼성전자주식회사 Polishing pad for chemical mechanical polishing process and chemical mechanical polishing apparatus having the same
JP5516051B2 (en) * 2010-05-13 2014-06-11 旭硝子株式会社 Polishing apparatus using polishing pad and glass plate manufacturing method
CN102107392A (en) * 2010-12-24 2011-06-29 江苏大学 Wafer grinding tray supporting device
US8968058B2 (en) * 2011-05-05 2015-03-03 Nexplanar Corporation Polishing pad with alignment feature
JP2013201213A (en) * 2012-03-23 2013-10-03 Toshiba Corp Abrasive pad and polishing method
US20140024299A1 (en) * 2012-07-19 2014-01-23 Wen-Chiang Tu Polishing Pad and Multi-Head Polishing System
US9034063B2 (en) * 2012-09-27 2015-05-19 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing grooved chemical mechanical polishing layers
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
JP6545261B2 (en) 2014-10-17 2019-07-17 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated CMP pad structure with composite properties using an additive manufacturing process
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
JP6685392B2 (en) * 2015-10-16 2020-04-22 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Method and apparatus for forming a high performance polishing pad using an additive manufacturing process
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
CN106564004B (en) * 2016-11-17 2018-10-19 湖北鼎龙控股股份有限公司 A kind of polishing pad
CN108214285A (en) * 2018-01-25 2018-06-29 成都时代立夫科技有限公司 A kind of chemical mechanical polishing pads
JP7108450B2 (en) * 2018-04-13 2022-07-28 株式会社ディスコ Polishing equipment
CN108655948B (en) * 2018-07-06 2024-02-23 湖北鼎龙控股股份有限公司 Polishing pad and polishing apparatus
JP7098240B2 (en) * 2018-08-22 2022-07-11 株式会社ディスコ Abrasive pad
CN112959212B (en) * 2021-03-22 2023-03-03 万华化学集团电子材料有限公司 Chemical mechanical polishing pad with optimized grooves and application thereof
CN114918823B (en) * 2022-05-20 2023-08-25 安徽禾臣新材料有限公司 White pad for polishing large-size substrate and production process thereof
CN118493212A (en) * 2024-06-19 2024-08-16 北京晶亦精微科技股份有限公司 Wafer partition polishing device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5650039A (en) * 1994-03-02 1997-07-22 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved slurry distribution
US5921855A (en) * 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
US6692338B1 (en) * 1997-07-23 2004-02-17 Lsi Logic Corporation Through-pad drainage of slurry during chemical mechanical polishing
JPH11156699A (en) * 1997-11-25 1999-06-15 Speedfam Co Ltd Surface polishing pad
CN1312742C (en) * 1999-03-30 2007-04-25 株式会社尼康 Polishing disk, polishing machine and method for manufacturing semiconductor
US6656019B1 (en) * 2000-06-29 2003-12-02 International Business Machines Corporation Grooved polishing pads and methods of use

Also Published As

Publication number Publication date
US20050260929A1 (en) 2005-11-24
KR20060046093A (en) 2006-05-17
CN1864929A (en) 2006-11-22

Similar Documents

Publication Publication Date Title
TW200602154A (en) Chemical mechanical polishing pad and chemical mechanical polishing method
MY146929A (en) Polishing pad
MY136726A (en) Low surface energy cmp pad
TW200510124A (en) Polishing pad for electrochemical-mechanical polishing
TW200744786A (en) Chemical mechanical polishing pad and chemical mechanical polishing method
DE602005015307D1 (en) NONWOVER GRINDING BODY AND METHOD
SG149772A1 (en) Method for polishing a substrate composed of semiconductor material
NZ586833A (en) Interface pad for use between an abrasive article and a support tool
MY131030A (en) Polishing pad with oriented pore structure
TW200740972A (en) Metal polishing slurry
TW200705376A (en) Diamond conditioning of soft chemical mechanical planarization/polishing (CMP) polishing pads
AU2003274812A1 (en) Method for chemical mechanical polishing (cmp) of low-k dielectric materials
WO2011028700A3 (en) Chemical mechanical polishing conditioner
PL357802A1 (en) Grinting wheel incorporating abrasive segments
IL182536A0 (en) Cmp composition comprising surfactant
MY146358A (en) Use of cmp for aluminum mirror and solar cell fabrication
TW200613090A (en) Chemical mechanical polishing pad
WO2006044417A3 (en) Cmp composition with a polymer additive for polishing noble metals
WO2008120578A1 (en) Metal film polishing pad and method for polishing metal film using the same
IL179570A0 (en) Cmp composition for improved oxide removal rate
ATE283147T1 (en) GRINDSTONE FOR FINEST PROCESSING
IL189504A0 (en) Abrasive-free polishing method
TW200531784A (en) Chemical mechanical polishing pad
TWI266673B (en) Polishing pad, polishing device, and polishing method
MY161777A (en) Glass disk processing method