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TW200520229A - Thin film transistor of multi-gate structure and its manufacturing method - Google Patents

Thin film transistor of multi-gate structure and its manufacturing method

Info

Publication number
TW200520229A
TW200520229A TW092134005A TW92134005A TW200520229A TW 200520229 A TW200520229 A TW 200520229A TW 092134005 A TW092134005 A TW 092134005A TW 92134005 A TW92134005 A TW 92134005A TW 200520229 A TW200520229 A TW 200520229A
Authority
TW
Taiwan
Prior art keywords
manufacturing
thin film
film transistor
gate structure
gate
Prior art date
Application number
TW092134005A
Other languages
Chinese (zh)
Other versions
TWI307961B (en
Inventor
Shih-Chang Chang
Chang-Ho Tseng
De-Hua Deng
Yaw-Ming Tsai
Original Assignee
Toppoly Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppoly Optoelectronics Corp filed Critical Toppoly Optoelectronics Corp
Priority to TW092134005A priority Critical patent/TW200520229A/en
Priority to US10/833,487 priority patent/US7238963B2/en
Priority to JP2004132507A priority patent/JP4101787B2/en
Publication of TW200520229A publication Critical patent/TW200520229A/en
Priority to US11/709,480 priority patent/US7897445B2/en
Application granted granted Critical
Publication of TWI307961B publication Critical patent/TWI307961B/zh

Links

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  • Thin Film Transistor (AREA)

Abstract

The present invention provides a thin film transistor of multi-gate structure and its manufacturing method. Each of covered areas of gate insulating layers exposed each from both sides of gate layers is ion-implanted into a mask, and the LDD area and source/drain area are formed at the same time. As the LDD area is formed at both sides of each gate layer, the leakage current of the polysilicon TFT is controlled to a minimum level, the registration problem in the photolithography is eliminated, and the length of the LDD area is symmetric accurately.
TW092134005A 2003-04-28 2003-12-03 Thin film transistor of multi-gate structure and its manufacturing method TW200520229A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW092134005A TW200520229A (en) 2003-12-03 2003-12-03 Thin film transistor of multi-gate structure and its manufacturing method
US10/833,487 US7238963B2 (en) 2003-04-28 2004-04-27 Self-aligned LDD thin-film transistor and method of fabricating the same
JP2004132507A JP4101787B2 (en) 2003-04-28 2004-04-28 Multi-gate thin film transistor and method of manufacturing the same
US11/709,480 US7897445B2 (en) 2003-04-28 2007-02-21 Fabrication methods for self-aligned LDD thin-film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW092134005A TW200520229A (en) 2003-12-03 2003-12-03 Thin film transistor of multi-gate structure and its manufacturing method

Publications (2)

Publication Number Publication Date
TW200520229A true TW200520229A (en) 2005-06-16
TWI307961B TWI307961B (en) 2009-03-21

Family

ID=45071712

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092134005A TW200520229A (en) 2003-04-28 2003-12-03 Thin film transistor of multi-gate structure and its manufacturing method

Country Status (1)

Country Link
TW (1) TW200520229A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI839009B (en) * 2022-12-06 2024-04-11 友達光電股份有限公司 Semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101041141B1 (en) 2009-03-03 2011-06-13 삼성모바일디스플레이주식회사 organic light emitting display device and the fabricating method of the same
KR101056428B1 (en) 2009-03-27 2011-08-11 삼성모바일디스플레이주식회사 Thin film transistor, manufacturing method thereof, and organic light emitting display device comprising the same
KR101094295B1 (en) 2009-11-13 2011-12-19 삼성모바일디스플레이주식회사 Fabricating method of polysilicon, Thin film transistor, and Organic light emitting display device
TWI548039B (en) * 2015-03-17 2016-09-01 力晶科技股份有限公司 Method for fabricating semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI839009B (en) * 2022-12-06 2024-04-11 友達光電股份有限公司 Semiconductor device

Also Published As

Publication number Publication date
TWI307961B (en) 2009-03-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees