TW200426905A - Multi-layer structure and its manufacturing method, functional structure and its manufacturing method, and electron-beam exposure mask and its manufacturing method - Google Patents

Abstract

A multi-layer structure is manufactured by bonding the first layer and the second layer at room temperature. The first layer and the second layer are bonded via a metallic film, such as an Al film, containing more than one kind of metals; and at least one of the first layer and the second layer is made of single crystalline material. The first and the second layers can be made of the single crystalline material or made of mutually different materials. The first and the second layers are, for example, single crystalline Si layers or single crystalline Si substrates. The multi-layer structure can be used to manufacture the micro-mirror.

Description

200426905 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to a multilayer structure and a manufacturing method thereof, a functional structure and a manufacturing method thereof, and a photomask for electron beam exposure and a manufacturing method thereof. [Previous Technology] In the field of MEMS (Microelectromechanical Systems), substrates used to make structures with flat surfaces, such as micro-mirrors, have mostly used SOI (Silicon On Insulator) substrates. It has a structure having a thermal oxide film (Si02 film) called a BOX layer between the upper and lower single crystal silicon (Si) layers, and a fabricator is fabricated by processing these single crystal Si layers. The above-mentioned single-crystal Si layer processing of the SOI substrate uses a method called deep RIE (Reactive Ion Etching) which uses a high-density plasma dry I etch method (for example, Alexandra Rickard). and Mark McNie 丨 'Characterisation and optimisation of deep dry etching for MEMS applications "SPIE International Confererence on` `Microelectronic & MEMS Technologies", Edinburgh (UK), May 2001 and Japanese Patent Application Publication No. 2001-168081). Japanese Patent Application Laid-Open No. 5-2 17825 discloses a technique for making a Si substrate porous, forming a non-porous Si single crystal layer on the porous substrate, and then depositing the non-porous Si single crystal on the substrate. In a state where the surface of the layer is in contact with another substrate having a metal surface, the two Si substrates are bonded by heating the temperature to 450 to 900 QC. In addition, Japanese Patent Application Laid-Open No. 5-10971 discloses a technology, It is on the face of the polycrystalline Si layer on which the first Si substrate is formed

O: \ 88 \ 88490.DOC 200426905 The two Si substrates can be bonded by performing a heat treatment of about 100 (rc) in a state in contact with the second Si substrate. In addition, Japanese Patent Application Laid-Open No. 031-335 Japanese Patent Application Laid-Open No. 1 (M501 No. 76) discloses a technique for forming an SOI substrate by joining two substrates by forming a reaction layer between metal and metal, a semiconductor, and the like between the two substrates. When the deep RIE method is used to process the single crystal layer of the SiO substrate, when the single crystal 3: 1 layer is etched and the bottom ^ ... film is exposed, the

The SiO2 film bends the ion channels and creates the phenomenon that the grooves in the lower part of the single crystal sense layer can be dug out. In order to suppress this phenomenon, it is necessary to take the following countermeasures: The procedure for changing the etching process to the end of the single crystal by layer etching, or installing an anti-charge mechanism in the etching device. However, such countermeasures will cause many problems. The former is troublesome and lacks correctness, while the latter has too much initial investment and it is difficult to fully control. In addition, when an SOI substrate is used, since it is difficult to fabricate electrical wiring on the side of the Si02 film of the single crystal Si layer, usually a single crystal & layer is selectively applied with a doping value as a package wiring. In this way, it is difficult to produce a structure that utilizes a single crystal to layer both sides. Therefore, the problem to be solved by the present invention is to provide a multilayer structure and a k-making method which can manufacture various functional structures such as a micro-mirror which is inexpensive, simple, and highly accurate. Other problems to be solved by the present invention are to provide a functional structure and a method of manufacturing the same ', which can manufacture various functional structures such as a micro-mirror that is inexpensive, simple, and highly accurate. Other problems to be solved by the present invention are to provide an electron beam exposure light.

O: \ 88 \ 88490.DOC -6- 200426905 Mask and manufacturing method thereof, which can manufacture a photomask for electron exposure which is cheap, simple, and accurate. [Summary of the Invention] In order to solve the above-mentioned problem, the multilayer structure of the first aspect of the present invention has a straight feature: a first layer and a second layer composed of a layer containing more than one metal and at least one of which is a single crystal material. Join at room temperature. In this 'early crystal material', there are not only those which are completely single crystal but also those which contain subgrain boundaries, etc., which can be substantially single crystal. In addition, in the case where the first layer 7 曰 之 # is not composed of a single crystal material, it is specifically a polycrystal: an amorphous material. In a typical example, the first layer and the second layer are each composed of an early crystal material. Here, single crystal materials are those which have very little internal stress or are hard-working. They can be used as construction materials because they can produce flat layers or substrates. The first layer and the second layer may be composed of the same material, or may be composed of different materials. The materials of the first layer and the second layer can be selected according to the purpose of use of the multilayer structure, and basically any material can be used. The specific example is one of the first layer and the second layer. '0 < other, said, c-stone, etc.), m-v group compound semiconductors (for example, fluorene semiconductors,: ηp-based semiconductors, GaN-based semiconductors, etc.) represented by compound-based semiconductors and the other by &, Glass (for example, Peller = Li), Tao Jing, etc. The materials of the first layer and the second layer are used; when the conductor is used, the material guide is cut into the impurity and cut into the P-type impurity. One of its typical wealth, first =

O: \ 88 \ 88490.DOC 200426905 is composed of single crystal Si, especially the first sound, both the primary and secondary layers are composed of single crystal Si. In addition, in another typical example, at least one of the first and second layers is composed of S1, and the other is composed of glass or ceramics. When at least one of the first layer and the second layer must be processed by using the dry name, the layer is made of materials that can be carved by dry name. As for the materials that can be dried, various materials can be used which are different from those used by the dry etching method, and the single crystal is one of the materials with good dry etching properties. One. The first layer and the second layer can be a single-layer structure composed of a single material, or a multilayer structure composed of a plurality of layers made of the same or a plurality of materials. In addition, the 'first layer and the second layer can also be formed in any of the squares or squares with a certain structure or element. A layer including one or more metals sandwiched between the first layer and the second layer is typically composed of a metal or an alloy. The metal or alloy can be selected according to the purpose of use of the multilayer structure, and basically any material can be used, and most of them are selected from various aspects including dry etching resistance, electrical conductivity, and thermal conductivity. Specific examples are Al, Cu, An, Cr, Ta, W, and the like. Here, in order to use normal temperature bonding, a low melting point metal such as A1 can be used. In addition, a layer containing more than one metal can be patterned into a specific shape according to the purpose of use of the layer structure. For reference, the thermal expansion coefficients of the metals exemplified above are shown relative to Si: 2.44x1CT6 / ° C, A1 series 2.3x10_5 / ° C, Cu series 1.4xl (T5 / ° c, Ai ^ l.42xl05 / ° C ' Ci ^ 8.2xl (r6 / ° c, Ta # 7xl0_6 / ° C, w & W system 4xl (T6 / ° C. In addition, the thermal expansion rate of silicide formed by the reaction between metal and Si, Shixihua Ta series 8.9 xl0-6rC, silicidation, Shixihua \ ¥ 8.4 father 10-6 /. (:, and silicidation (:: 0 system 94> < 10-6 /. (:.

O: \ 88 \ 88490.DOC 200426905 When dry etching is used to process one of the first and second layers and a layer containing more than one metal sandwiched between such doors, and then dry etching is used to process the other. Initially, the back of the dry-etched layer is exposed, and direct dry-etching may cause damage. Therefore, it is best to prevent at least one of the first and second layers and the layer containing more than one metal. 5 Also set the last name engraved barrier. The carrier layer is engraved, and an insulating film (such as a Si02 film or a Si3N4 film) can be typically used. The first and second layers may be substrates, films formed by various film-forming technologies, or thinner substrates. The thickness of at least one of the first layer and the second layer is typically less than 100 μη, more typically less than 50 μηη, and further typically less than 10 μπι. As long as the above-mentioned properties are not violated, the following inventions can be equally established. The method for manufacturing a multilayer structure according to the second invention of the present invention is characterized by having a step of joining a first layer and a second layer composed of a layer containing more than one metal and at least one of which is a single crystal material at room temperature. The method for manufacturing a multilayer structure according to the second invention of the present invention is characterized by having the following steps: preparing at least one of a first substrate and a second substrate made of a single crystal material, and forming on the main surface of the first substrate an A step of layering the above metal; and a step of bonding the second substrate to a layer containing more than one metal at room temperature. Here, the first substrate and the second substrate correspond to the first layer and the O: \ 88 \ 88490.DOC -9- 200426905 layer of the first invention, and the thin film of the first substrate is formed by the film formation technology. Or the first substrate is the first layer, and the second substrate is thinned, the film is formed by the film formation technology, or the second substrate is the second layer. Bonding the second substrate to a layer containing more than one metal at room temperature, which is typically also performed in an ultra-high vacuum to clean the main surface of the second substrate and the surface of the layer containing more than one metal in the opposite state. Apply pressure. After bonding at room temperature, if necessary, one of the first substrate and the second substrate is thinned by, for example, back grinding. When the thinned substrate is composed of a single crystal material, the thinned substrate constitutes a single crystal layer. In addition, a porous U ′ may be formed on the main surfaces of the first substrate and the second substrate made of a single-crystal material on the square side, and a single-crystal layer may be grown on the porous layer. After the metal layers are joined at room temperature, they are separated at the position of the porous shell. This separation system forms a single crystal layer whose mechanical weakness can be grown on the porous layer. It is composed of the same material as the substrate used to form the porous layer. Depending on the situation, it can also be used by a The substrate forming the porous layer is made of different materials. Furthermore, also: by using hydrogen implanted ions, a hydrogen storage layer is formed on the first substrate and the main substrate of the first substrate made of single crystal material, and the second substrate is bonded to the layer containing the above metal at room temperature. The separation at the position of the hydrogen storage layer is the use of the hydrogen storage layer to constitute the mechanical weak point. Knife. According to necessity, a layer containing one or more kinds is formed on the main surface of the first substrate, and the layer containing one of the components is patterned into a specific shape before being bonded to the second substrate at room temperature. Gold

O: \ 88 \ 88490.DOC 200426905 X, as long as it does not violate its nature, the following inventions can be equally established. The multilayer structure of the fourth invention of the present invention is characterized in that: the first layer and the second layer composed of a layer containing more than one metal and at least one of which is a single crystal material are joined at room temperature; and / or containing more than one metal At least one of the first layer, the first layer, and the second layer is patterned into a specific shape. Eight are typically a layer containing more than one metal, and the first and second layers are each patterned into a specific shape. The patterned shape can be appropriately selected according to the purpose of use of the functional structure or its function. Mechanical and structural systems have structures with certain functions. Generally speaking, they are mechanical, private, electro-mechanical, optical, electro-optical parts or 7L parts. Specific examples are laser scanning in optical disc devices. The micro-mirror used. To the extent that the above-mentioned one does not violate its nature, the following fifth invention can be equally established. The method for manufacturing a functional structure of the fifth invention of the present invention is characterized in that it has the following steps ..., preparing at least a first substrate and a second substrate made of a single crystal material, and forming the first substrate on the main surface of the first substrate May include a step of a layer of more than one metal; a step of joining the first substrate and a layer including more than one metal at room temperature; and a step of bonding the first substrate and the second substrate to a layer including more than one metal

O: \ 88 \ 88490.DOC -11-200426905 / — The step of patterning a square into a specific shape. In its typical case, the substrate is bonded to a layer containing more than one metal at room temperature, and the layer containing more than one metal is patterned into a specific shape. In addition, the ground pattern is that the second substrate and a layer containing more than one metal are connected at room temperature, and one of the first substrate and the second substrate is patterned into a specific shape. :, If necessary, an etching barrier layer is formed between at least one of the first substrate and the second substrate and a layer including one or more metals. A sixth aspect of the invention is a photomask for electron beam exposure, characterized in that: the first layer and the second layer composed of a single crystal and at least one of which are formed of a single crystal are joined at room temperature; and / or include more than one type The metal layer and at least one of the first layer and the second layer form a mask pattern. μ Forms a photomask pattern 'and includes a layer of more than one metal, the first layer and the first layer, and the material of the party. It is better to choose a material with high ability to block electrons if necessary.亥 光光 图, which is typically a layer containing more than one metal and the first sound; 5 flute-linen> One of the layers is formed, and the other of the first layer and the second layer may be Remove its mask pattern completely. The above-mentioned seventh invention is similarly established. The seventh method of the present invention is a method for manufacturing a photomask for electron beam exposure, which is characterized by having the following steps: 1. Preparing at least one of a first substrate and a second substrate composed of a single crystal material, and the first -tc X. A step of forming a layer containing more than one metal on the main surface of the soil plate; a step of joining the first substrate with a layer containing more than one metal at room temperature;

O: \ 88 \ 88490.DOC -12- and the step of forming a mask pattern by " square patterning " a layer of a metal covering ^ to h above the first substrate and the second substrate. According to the above-mentioned composition, M. A ^ hunting is composed of a layer consisting of more than one type of metal such as metal or alloy, and at least one of which is a single material. That is, the second layer or the first substrate and the second substrate at normal temperature 2 'in the dry_ processing of the first layer and the second layer or the first substrate and the second square, even after the end of the last name engraving- The above gold receiving layer is exposed. Because the electrically conductive gate including a layer of more than one metal is not similar to the Si02 film, it will not be charged, and it can prevent the track from being derailed due to charging and the engravable layer can be dug out. Lower groove phenomenon. In this way, the following countermeasures are not required: change the program of the last name engraving process' or install a charging prevention mechanism in the money engraving device, so that the process can be made easier and the countermeasure cost can be reduced. In addition, "after forming a layer of one or more metals", by patterning the layer into a specific shape, an electrical wiring can be easily formed. Furthermore, by bonding the first layer and the second layer or the first substrate and the second substrate at room temperature, as described above, unlike the case of bonding the substrates by using a high-temperature heat treatment, the influence of thermal expansion can be eliminated. That is, when the substrates are bonded using a high-temperature heat treatment, if the thermal expansion coefficients (linear expansion coefficients) of the bonded substrates are different from each other, the substrates become too large during the heat treatment, and it is difficult to obtain a flat bonded substrate. Production hinders. In order to prevent the above-mentioned lifting y ', the materials of the substrates to be bonded must be the same, and the freedom of selection of the substrates is significantly reduced. In contrast, in the present invention, since the first layer and the first layer or the first substrate and the second substrate are joined at room temperature, there is no thermal expansion effect. O: \ 88 \ 88490.DOC -13-200426905 Therefore, this problem is solved to make the substrate Increased freedom of choice. In this way, for example, one of the first layer and the second layer, or the first substrate and the first substrate can be formed using an insulator such as A1N. In the normal temperature bonding, no reaction layer was formed on the layer interface or the substrate interface. [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a multilayer structure according to a first embodiment of the present invention. As shown in FIG. 1, in this multilayer structure, the (100) single crystal Si layers 2 and 3 are bonded at room temperature to sandwich a metal film 1 above and below to form a three-layer structure. As the material of the metal film 1, for example, Al or Cu can be used. At this time, the thickness of the (100) single crystal Si layer 2 is generally less than 100 µm, and typically less than 50 µxη depending on the application. On the other hand, (100) a single-crystal Si layer 3 is a support for a multilayer structure, which is composed of a (100) single-crystal Si substrate, and its thickness is, for example, that the multilayer structure is manufactured The method is as follows. First, a metal film 1 is formed on a layer (100) of a (100) single crystal composed of a (100) single-crystal Si substrate by a base shot method, a vacuum evaporation method, or the like, and formed in an ultra-high vacuum chamber. The metal film (100) single crystal Si layer 3 and another (100) single crystal are spaced apart from each other by a substrate, and the opposite knife is irradiated with Ar ions on the opposite surface to be cleaned. Pressure is applied in the state to perform normal temperature bonding. Thereafter, the (100) single-crystal si substrate on the opposite side of the (100) single-crystal Si layer 3 is thinned to a specific thickness by back surface polishing to form a (100) single-crystal si layer 2. In this way, a multilayer structure as shown in the figure can be manufactured. According to the first embodiment, the following various advantages can be obtained. First, (100) single crystal M2 is most suitable as a structure because of its good workability when dry.

O: \ 88 \ 88490.DOC -14- 200426905, so using the dry name engraving, this (100) monocrystalline sense layer 2 can be processed into a desired shape 'to produce parts or components with various functions. At this time, due to. ⑽) The bottom of the early-crystal SW2 is a metal with good resistance to dryness. Therefore, when a single crystal dry-name is engraved using cafa, for example, the metal film ❻ forms a trap layer. In other words, because ⑽) the single crystal and metal film 1 have a large difference in the engraving characteristics, a large selection ratio can be adopted when the money is engraved, so that the metal film i forms a (10G) single crystal SW2 engraving blocking layer and Effective effect. Not only that, the electric conductivity of the metal film 1 can suppress the abnormal etching of the single crystal Si layer caused by the charging of the S02 film, which is a problem when the single crystal si layer of the SiO substrate is engraved. The occurrence of the groove phenomenon is suppressed, so there is no problem of digging out (1⑼) the lower portion of the single crystal & layer 2. In addition, since the occurrence of the groove phenomenon is suppressed, it is not necessary to replace the procedure of the etching process, and it is not necessary to provide a charging prevention mechanism in the etching device, which makes each process simple and low cost. In addition, after the (100) single crystal sense layer 2 is processed, the metal film 1 can be expected to function as a current path or a heat conduction path. Since the substrate bonding system uses normal temperature bonding, there is no need to worry about the warpage of the substrate due to the difference in thermal expansion coefficient between the metal and Si used in the metal film 1, and there is no reaction between the metal and Si. Next, a micromirror according to a second embodiment of the present invention will be described. Figs. 2A and 2B show a multilayer structure with a three-layer structure for manufacturing a micromirror. Fig. 2A is a plan view and Fig. 2B is a cross-sectional view taken along the line X-X of Fig. 2A. As shown in FIG. 2A and FIG. 2B, the same place as the first embodiment is that the multilayer structure system sandwiches the metal film 11 up and down and joins (100) single crystal sense layers 12 and 13 at room temperature to form a three-layer structure. The metal film 11 is patterned into O: \ 88 \ 88490.DOC -15- 200426905 in different places to correspond to the specific shape of the micromirror structure. In addition, in FIG. 2A, the (100) single-crystal Si layer 12 is omitted from illustration. The manufacturing method of the multilayer structure is the same as the manufacturing method of the multilayer structure of the first embodiment except that the metal film 11 is patterned into a specific pattern after the metal film u is formed. 3A and 3B are micromirrors manufactured using the multilayer structure shown in Figs. 2A and 2B. Fig. 3A is a plan view and Fig. 3B is a cross-sectional view taken along the line Y-Y in Fig. 3A. This M mirror is manufactured using the multilayer structure shown in Figs. 3A and 3B as described below. That is, first, a mirror surface 4 made of a metal film and a pair of electrode tabs 15 and 16 are formed at a specific position on the (100) single crystal sense layer 12. The mirror surfaces 14 and the pair of electrode pads 15 and 16 are to be formed on a (100) single crystal

After the Si layer 12 is fully formed, the metal film can be formed by a patterning method by etching a photoresist pattern or the like as a photomask, or by a peeling method. Next, in a state where a photoresist pattern having a specific shape is used to form a photomask on the surface of layer (100) single crystal, and (100) single crystal is etched to half the height by layer 12 using dry etching, After removing the photoresist pattern, and using a photoresist pattern having a specific shape to form a photomask on the surface of the (100) single crystal layer 12, the (1 00) single crystal Si layer 12 is completely engraved with a dry name. It is carved to form a rectangular mirror portion 17 and two V-shaped hinge portions 18 and 19 supporting the mirror portion 17. After removing the photoresist pattern, in a state where a photoresist pattern having a specific shape forms a mask on the surface of the (1⑻) single crystal 31 layer 13, the (100) single crystal sense layer 13 is penetrated by dry etching. Etching. In this way, a micro-mirror 20 composed of a mirror portion 17 and a hinge portion 18, "can be formed. This micro-mirror 20 is formed by the bottom of the hinge portion 18, 19 O: \ 88 \ 88490.DOC -16- 200426905 邛Monolithic mirrors. Here, the hinge portions 18 and 19 as a whole and the specific portions on the hinge portions 18 and 19 sides of the mirror portion 17 have a double-layer structure, which is composed of (100) a single Si layer 12 and a metal. The film 11 is composed of two layers. The mirror surface 14 is formed on the mirror portion 17. The tortoiseshell tabs 15 and i 6 are formed on the bottom portions of the hinge portions 18 and 19, respectively. The micromirror 20 manufactured as described above is provided on the electrode. The hinge portions 18 and 19 that generate heat by applying pulsed private pressure between the spacers 15 and 16 are deformed due to different thermal expansion coefficients of Si and metal, and as a result, they can move up and down. The micromirror 20 can be used, for example, in an optical disc device. The device for scanning laser light. In addition, in FIG. 2A, FIG. 2B, FIG. 3A and FIG. As described above, according to the second embodiment, the micro-reflection can be easily manufactured using the multilayer structure shown in FIGS. 2A and 2B. In other words, in the past, as shown by the micro-mirror 20, a thin-film device having a fine metal pattern on the back side cannot be easily manufactured. In particular, as shown by the micro-mirror 20, a thin-film device that forms a thin film and uses a single crystal is difficult to manufacture In contrast, in the second embodiment, the micromirror 20 is manufactured by using a multilayer structure in which a metal film 11 patterned in a specific shape is formed in advance between the (100) single-crystal Si layers 12 and 13. A fine metal pattern can be formed on the back side of the micromirror 20 as a thin film device using single crystal Si. Of course, various advantages similar to those of the first embodiment can be obtained. Next, the multilayer structure of the third embodiment of the present invention will be described. The manufacturing method is shown in FIGS. 4A to 4F. In the third embodiment, as shown in FIG. 4A, a (100) single crystal Si substrate 21 is prepared and washed to clean the surface. O: \ 88 \ 88490.DOC -17- 200426905 Secondly, as shown in FIG. 4B, a porous sense layer 22 is formed on a (100) single crystal substrate by anodization, and then a silicon oxide layer is formed thereon. ) Single crystal sense layer 23 stupid crystals grow, and A structure having a (100) single crystal sense layer 23 is formed on the porous Si layer 22. Next, as shown in FIG. 4C, a metal film 24 is formed on the (100) single crystal sense layer 23 by a sputtering method. Next, as shown in FIG. 4D, the (100) single crystal Si substrate 25 whose surface has been washed and purified is used for other purposes, and the (100) single is irradiated with ^ ions in an ultra-high vacuum. After the surface of the crystalline Si substrate 25 and the surface of the metal film 24 on the (100) single crystal Si substrate 21 are cleaned, they are brought into close contact with each other and pressure is applied to perform normal temperature bonding. In this way, the (100) single-crystal Si substrate 21 and the (100) single-crystal Si substrate 25 can be strongly bonded to form a single substrate. Next, as shown in FIG. 4E, the porous material of the (100) single-crystal Si substrate 21 is aimed at the layer 22 and sprayed with water thereon, and the porous layer 22 is demarcated. Next, the porous Si layer 22 remaining on the outermost surface of one of the separated (100) single crystal Si substrates 25 is chemically removed. In this way, as shown in FIG. 4F, a multilayer structure having a three-layer structure in which a metal film 24 and a (100) single-crystal Si layer 27 are sequentially formed on a (100) single-crystal Si substrate 25 can be manufactured. According to the second embodiment, since the (100) single-crystal Si layer 23 is formed by epitaxial growth, its thickness can be easily reduced to about 1 μm or less, and its thickness can be controlled with high accuracy. In-plane distribution. In addition, the same advantages as those of the first embodiment can be obtained. Next, a method for manufacturing a photomask for electron beam exposure according to a fourth embodiment of the present invention will be described. This manufacturing method is shown in FIGS. 5A to 5D. Fourth Reality; 5 is also in the form 'First, as shown in FIG. 5A, for example, the third real

O: \ 88 \ 88490 DOC -18- 200426905 Same temperature bonding method at room temperature to fabricate (100) single crystal sense substrate "sequentially formed metal film 32 and (⑽) single crystal & layer A multilayer structure having a three-layer structure of 33. Next, as shown in FIG. 5B, a photoresist pattern (not shown) made of a photoresist having a specific shape corresponding to a photomask pattern is used in this (100). ) Single crystal si: 33 Table © In the state of forming a photomask, the single crystal sense layer 33 is dried up until the metal film 32 is exposed. Then, the metal film 32 is dry-etched by using a photoresist pattern. In this way, it can be formed The line and gap mask pattern 34 has a two-layer structure having a metal film 32 and a (100) single crystal Si layer 33. Next, as shown in FIG. 5C, on the back of the (100) single crystal Si substrate 31 A photoresist pattern having a specific shape that is partially opened corresponding to the mask pattern 34 is formed, and the (100) single crystal si substrate 31 is dry-etched from the back side using the photoresist pattern as a mask to form a through hole In this way, the mask pattern 34 has a structure that hangs in the air except for its tip end. According to the above, the purpose of the present invention can be manufactured. The sub-line exposure mask.

According to the fourth embodiment, since the mask pattern 34 of the electron beam exposure mask has a two-layer structure having a metal film 32 and a (100) single-crystal Si layer 33, the electron beam exposure mask is used for semiconductors. When exposing a wafer or the like, the metal film 32 having good thermal conductivity can be used as a thermal conduction path to quickly discharge the heat generated by the electron beam exposure mask heated by electron beam irradiation, and effectively prevent the mask caused by temperature rise. Deformation of the pattern 34 and the like. In this way, exposure that faithfully reflects the shape of the mask pattern 34 can be performed. Hereinafter, a specific embodiment of the present invention will be described. Example 1 Example corresponding to the first embodiment

O: \ 88 \ 88490.DOC -19- 200426905 In the multilayer structure shown in Figure 1, the (100) single crystal has a layer 3 series of 5 inches in diameter and a thickness of 500 μϊη2 (100) single crystal Si substrate; (100%). ) The single crystal is 20 μm in thickness of layer 2. The metal film 1 is an Al film having a thickness of 1 μm. These layers are strongly bonded to each other 'and can be used without any problem even if heated to about 400 ° C. This multilayer structure is manufactured by the normal temperature bonding method as follows. First, an A1 film was formed to a thickness of 1 μm on a (100) single crystal Si substrate 3 constituting a support substrate with a diameter of 5 inches and a thickness of 500 μχη by a sputtering method. On the other hand, a single-crystal Si substrate having a diameter of 5 inches and a thickness of 200 pm 2 (1 () 0) was used for other purposes. The base pressure was 1 > < 10.9 Torr The ultra-high vacuum valleys kept the two substrates facing each other, and irradiated the opposite substrates with Ar ion beams at a pressure of 1 × 10-3 Torr to clean the surfaces. The Ar ion acceleration voltage at this time is 1 kV. Next, the two substrates are brought into close contact at normal temperature to apply pressure. The applied pressure is 1 MPa. As a result, a (100) single-crystal Si substrate 3 having a thickness of 500 μm and a metal film formed on the surface was bonded to a (100) single-crystal Si substrate having a thickness of 20001111 at room temperature. Next, a (100) single-layer Si substrate having a thickness of 200 was polished from the back surface side to reduce the thickness of the layer remaining on the A1 film forming the metal film to 20 μχη, and a (100) single-layer was formed.晶 义 层 2. Crystal sense layer 2. In this way, a multilayer structure for this purpose is manufactured. The multilayer structure manufactured as described above can suppress the groove phenomenon when the (100) single crystal is dry-etched with the layer 2, and contribute to the realization of a good etching shape. Example 2 is an example corresponding to the second embodiment. The (100) single crystal sense layer of the multilayer structure shown in FIGS. 2A and 2B is used.

O: \ 88 \ 88490.DOC -20- 200426905 There is a (100) single crystal Si substrate with a diameter of 5 inches. The thickness of the (100) single crystal sense layer 13 is 525 μm, and the thickness of the (100) single crystal layer 2 on the upper side is 20 °. The metal film 11 is an Al film having a thickness of 1 μm. This multilayer structure can be manufactured using the same process as in Example 丨, but it is different from Example 1 in that the A1 film as the metal film 11 is formed on the (100) single crystal ^ layer 13 and the The A1 film is patterned for normal temperature bonding. Using this multilayer structure, a micromirror shown in FIGS. 3A and 3B was manufactured. After the <: 17-811 film was formed on the (100) single crystal Si layer 12 by a sputtering method, the mirror surface 14 and the electrode pads 15, µ were simultaneously formed by patterning them. Next, the basic structure of the micromirror 20 is formed by dry etching the (100) single crystal Si layer 12. In addition, the (100) single crystal Si layer 12 is a low-resistance layer having a resistivity of 0 · q · em. Next, dry etching is performed from the (100) single crystal on the back side of the layer 13, as shown in FIG. 3B, to move the micromirror 20 freely from the (100) single crystal ^ layer 13 as a supporting substrate. The hinge portions 18 and 19 of the micro-mirror 20 are formed as a metal film in the lower part of the (100) single crystal layer 12 in advance to form a double-layer structure. In addition, when the (100) single crystal ^ layer 13 is dry-etched from the back side of the single crystal Si layer 13, the (100) single crystal Si on the upper side is over-etched due to the excessive etching after the (100) single crystal ^ layer 13 penetrates. The layer 12 causes damage. Therefore, when manufacturing a multilayer structure, an insulating film such as a Si02 film is formed on the (100) single-crystal Si layer 13 and the metal film 11 is formed thereon to make the insulation. The film forms an etch stop layer to effectively prevent damage to the (100) single crystal layer 12. In addition, this insulating film reduces the value of the current flowing when the hinge portions 18 and 19 of the double-layer structure are energized, and can also reduce the power consumption. Example 3 Example corresponding to the third embodiment

O: \ 88 \ 88490.DOC -21-200426905 According to the manufacturing method shown in FIGS. 4A to 4F, a multilayer structure is manufactured. First, (100) single crystal Si substrates 21 and 25 having a diameter of 5 inches were prepared. (100) single crystal ’

The thickness of the Si substrate 21 is 525 μm, and the thickness of the (100) single crystal Si substrate 25 is 200 μm. Next, (100) single crystal Si substrates 21 and 25 are anodized to form a porous Si layer 22 having a thickness of 0.8 μm, and then (100) single crystal Si is formed on the porous si layer 22. The layer 23 grows to a thickness of 0.6 μm. In this way, a structure having a (100) single crystal Si layer 23 on the porous 31 layer 22 was produced. Next, as the metal film 22, a film having a thickness of 1 μηΐ2 A1 is formed on the (100) single crystal Si layer 23 by a sputtering method. Next, 4 (100) single-crystal Si substrates 21 and (100) single-crystal Si substrates 25 formed by the metal film 22 are placed in an ultra-high vacuum chamber, and these surfaces are cleaned by washing with an Ar ion beam. , Make these close, apply pressure, and perform normal temperature bonding. The joining conditions are the same as in the first embodiment. In this way, a (100) single crystal substrate 21 and a (100) single crystal Si substrate 25 formed of the metal film 22 can be obtained as a composite substrate. Next, the porous Si layer 22 of the composite substrate was aimed at and sprayed with water to divide the composite substrate into two pieces. After that, the porous Si layer 22 on the outermost surface of a (100) single crystal Si substrate 25 is removed by processing in a mixed solution of HF and H202. The multilayer structure manufactured in this way has a substrate with a back and a surface polished after the substrates are bonded, which has a better uniformity of the thickness in the plane than the multilayer structure manufactured by the thin film manufacturing method, and the thickness is 1 The formation system of single crystals around μm is the best. Example 4 corresponds to an example of the fourth embodiment. In the multilayer structure shown in FIG. 5A, the thickness of the (100) single-crystal Si substrate 31 is 525 μπΊ '(100) of the single-crystal sense layer 33. 6 μm. Metal film 32 series

O: \ 88 \ 88490.DOC -22- 200426905 A1 film with exhaustion degree of 0.1 μm. The mask layer structure & body was used to manufacture a photomask for electron beam exposure using the following method: "Baisen" was coated with electron beam photoresist on 涂敷) single crystal _33, and the electron beam photoresist was exposed by electron beam tracing method. After forming the desired pattern, the photoresist is first blocked to form a photoresist pattern. Secondly, by using the photoresist pattern to make a dry cut ', ’) the single crystal_33 is patterned and formed into a desired pattern shape. Next, using the light-off case, the lower metal film 32 was further engraved to form a pattern having the same shape as the (1 （) single crystal s_3 pattern. In this way, the mask pattern 34 can be formed. In this case, a dry etching is performed from the back side of the (100) single-crystal Si layer 31, an opening is formed directly under the mask pattern 34, and a structure in which the mask pattern 34 is suspended in the air is formed.

The thus-produced photomask for electron beam exposure is a strong material that can form the (1GG) single crystal & layer 33 of the mask pattern 34 with almost no residual stress. In addition, the metal film 32 under the mask pattern 34 It plays a role in that it quickly discharges the electric charges charged by the photomask for electron beam exposure and the heat generated by the electron beam irradiation during exposure, so it shows good drawing ability. The above 'specifically describes the embodiments and examples of the present invention, but the present invention is not limited to the above-mentioned embodiments and examples, and can be variously modified according to the technical idea of the present invention. For example, the values (thickness or diameter-specific dimensions) listed in the above-mentioned embodiments and examples are materials, structures, shapes, surface orientations, processes, etc. are all examples, and values, materials, Structure, shape, surface orientation, manufacturing process, etc. Specifically, in the first embodiment, a ceramic material may be used instead of O: \ 88 \ 88490.DOC -23- 200426905 (100) single crystal Si layer 3, for example. In addition, instead of the multilayer structure of the first embodiment, a multilayer structure having a metal film between a ceramic substrate and a single crystal Si substrate is also very useful. In addition, a structure such as a cavity is provided in advance on the side constituting the supporting substrate, and the same structure can also be manufactured by bonding it to a substrate having a metal film. In the third embodiment and the third embodiment, the porous Si layer 22 is used as the separation layer, but hydrogen ions may be implanted into the (100) single crystal Si substrate 21, and the hydrogen storage layer formed thereby may be used as the separation layer. Layer instead of forming a porous Si layer 22 on a (100) single crystal Si substrate 21. In the fourth embodiment and the fourth embodiment, a layer composed of, for example, siC or diamond may be used instead of the (100) single crystal Si layer 33. As explained above, according to the present invention, a layer including more than one metal, such as a layer made of a metal or an alloy, and at least one of which is a first layer and a second layer or a first substrate and a second layer made of a single crystal material The substrates are bonded at room temperature, and various functional structures such as micro-mirrors, which are inexpensive, simple, and highly accurate, or photomasks for electron beam exposure can be manufactured.

[Brief description of the drawings] Fig. 1 is a cross-sectional view showing a multilayer structure of a first embodiment of the present invention; Figs. 2A and 2B are plan views and cross-sections of a multilayer structure for manufacturing a micro-mirror according to a second embodiment of the present invention; Figures 3A and 3] 8 shows a plan view and a cross-sectional view of a micromirror according to a second embodiment of the present invention. Figures ~ Figure 4F is a diagram illustrating a method for manufacturing a multilayer structure according to a third embodiment of the present invention. 5A-5D are cross-sectional views illustrating a method for manufacturing a photomask for electron beam exposure according to a fourth embodiment of the present invention. [Schematic representation of symbols]

O: \ 88 \ 88490.DOC -24- 200426905 1 metal film 2, 1 (100) single crystal Si layer 11 metal film 12, 13 (100) single crystal Si layer 14 mirror 15 > 16 electrode pad 17 mirror 18 ^ 19 Key 20 Micro-mirror 21 Early-crystal Si substrate 22 Porous Si layer 23 (100) Single-crystal Si layer 24 Metal film 25 (100) Single-crystal Si substrate 27 (100) Single-crystal Si layer 31 (100 ) Single crystal Si substrate 21 Single crystal Si substrate 32 Metal film 33 (100) Single crystal Si layer 34 Mask pattern O: \ 88 \ 88490.DOC-25

Claims (1)

426905 The scope of application for patents: h The characteristics of manufacturing L, the first layer and the second layer composed of a single crystal material containing μ-squares of more than one metal are often 2. As many as the first item in the scope of patent applications # Μ 1 上 M a Bei Xixi layer structure, wherein the first layer and the first layer are composed of a single crystal material. Among them, the above-mentioned first layer and the multilayer structure according to item 1 of the scope of patent application, and the above-mentioned second layer are composed of the same material. Among them, the above-mentioned first layer and the multilayer structure as described in item 1 of the patent application range, and the above-mentioned second layer are composed of different materials. Among them, the above-mentioned first layer and 5. Multi-layered structures such as item 1 of the scope of patent application ~ One of the above-mentioned second layers is composed of S1 and S11 (where 0 < ϋ, c or mv group compound semiconductors, and The other side is made of glass, ceramic or ceramic. 6. If the oldest multi-layer structure in the scope of patent application, at least one of the first layer and the second layer is made of single crystal Si. 7. If applied The multilayer structure of the first scope of the patent, wherein the first layer and the second layer are composed of single crystal Si. Δ · The multilayer structure of the scope of the patent application β, wherein the first layer and the second layer are At least one of them is made of dry-etchable material. 9. If the multilayer structure of item 丨 of the scope of patent application, the above-mentioned layer containing more than one metal is made of metal or alloy. A multilayer structure in which the above-mentioned layer system containing more than one metal is patterned into a specific shape. O: \ 88 \ 88490 DOC 200426905 η · The multilayer structure in item 1 of the claim range, wherein the above-mentioned layer An insect-shielding layer is provided between at least one of the first layer and the layer containing more than one metal. 12. The multilayer structure of item 11 in the patent scope, wherein the etching-blocking layer is an insulating film. "The multilayer structure of the item, wherein the thickness of at least one of the first layer and the second layer is 100 μm or less. The manufacturing method of the seed layer structure is characterized by the following steps: At least one of the above metal layers is joined at room temperature to a first layer and a second layer made of a single crystal material. A method for manufacturing a seed layer structure has the following steps: Prepare at least -square to be a single crystal material A first substrate and a second substrate, a step of forming a layer including more than one metal on the main surface of the first substrate, and a step of joining the second substrate and a layer including more than one metal at room temperature at a normal temperature. A method for manufacturing a multilayer structure according to item 15 of the patent, wherein the main surface of the second substrate and the surface including one or more layers are cleaned in an ultra-high vacuum. Purify and apply force in a state of opposing each other to join the second substrate and the above-mentioned layer containing the seed layer at normal temperature. 17 · For example, please refer to the manufacturing method of the multilayer structure of the 15th scope of the patent, where :: After the above-mentioned normal temperature bonding, one of the first substrate and the second substrate is thinned. O: \ 88 \ 88490 DOC -2- 200426905 18. Method for manufacturing a multilayer structure such as the 15th in the scope of patent application In which, a porous layer is formed on the main surface of the first substrate and one of the first substrates, and a single crystal layer is grown on the porous layer. After joining with the layer containing one or more metals at room temperature, separation is performed at the position of the porous layer. 19. The manufacturing method of the multilayer structure according to item 15 of the scope of patent application, wherein a hydrogen storage layer is formed on the main surface of one of the first substrate and the second substrate made of a single crystal material by using a hydrogen implant material. Then, after the first substrate and the layer containing one or more metals are joined at room temperature, separation is performed at the position of the hydrogen storage layer. 20. The method for manufacturing a multilayer structure according to item 15 of the application, wherein after forming the above-mentioned layer containing more than one metal, before carrying out the above-mentioned ordinary temperature bonding, the above-mentioned layer containing more than one metal is patterned into a specific shape. 2 1 · A functional structure, characterized in that: the first layer and the second layer composed of at least one single crystal material are joined at room temperature through a layer containing more than one metal; and the above layer containing more than one metal At least one of the first layer and the second layer is patterned into a specific shape. 22. The functional structure according to item 2 丨 in the scope of patent application, wherein the layer containing more than one metal, the first layer and the second layer are respectively patterned into specific shapes. 23 · The functional structure according to item 21 of the patent application scope, wherein the above-mentioned functional construction system is a micromirror. 24 · —A method for manufacturing a functional structure, which is characterized by having the following steps: 〇 \ 88 \ 88490 DOC 25. 26 · 27. 28. 29. Prepare at least a first substrate and a second substrate composed of a single crystal material. Forming a layer containing more than one metal on the main surface of the first substrate; and describing the step of bonding the first substrate and a layer containing more than one metal at room temperature; and bonding the layer of the above one or more metals to the first And a step of patterning at least one of the substrate and the previous substrate into a specific shape. 2. A method for manufacturing a functional structure that declares the scope of patent No. 24, in which the above-mentioned layer pattern containing one or more metals is patterned into a specific shape before the above-mentioned ordinary temperature bonding is ordered. For example, the method for manufacturing a functional structure according to item 24 of the patent application, wherein one of the first substrate and the second substrate is patterned into a specific shape after the normal temperature bonding is performed. For example, the method for manufacturing a functional structure according to item 24 of the patent application, wherein an etching stopper is formed between at least one of the first substrate and the second substrate and the layer containing more than one metal. A photomask for electron beam exposure, characterized in that: "the first layer and the second layer composed of a layer containing more than one metal, at least one of which is a single crystal material, are often temperature-bonded; and A mask pattern is formed on at least one of the layer, the first layer, and the second layer. A method for manufacturing a photomask for electron beam exposure, which is characterized by having the following steps: preparing at least one of a first substrate and a second substrate made of a single crystal material. O: \ 88 \ 88490.DOC -4- 200426905 A step of forming a layer containing more than one metal on the main surface of the first substrate; a step of joining the second substrate and the layer containing more than one metal at room temperature; and bonding the layer containing more than one metal to the first layer And patterning at least one of the second layer to form a mask pattern O: \ 88 \ 88490.DOC