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SG53048A1 - Magnetoresistance sensor with enhanced magnetoresistive effect - Google Patents

Magnetoresistance sensor with enhanced magnetoresistive effect

Info

Publication number
SG53048A1
SG53048A1 SG1997002983A SG1997002983A SG53048A1 SG 53048 A1 SG53048 A1 SG 53048A1 SG 1997002983 A SG1997002983 A SG 1997002983A SG 1997002983 A SG1997002983 A SG 1997002983A SG 53048 A1 SG53048 A1 SG 53048A1
Authority
SG
Singapore
Prior art keywords
magnetoresistive effect
magnetoresistance sensor
enhanced magnetoresistive
enhanced
magnetoresistance
Prior art date
Application number
SG1997002983A
Other languages
English (en)
Inventor
Hardayal Singh Gill
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of SG53048A1 publication Critical patent/SG53048A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3932—Magnetic biasing films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/399—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures with intrinsic biasing, e.g. provided by equipotential strips

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Heads (AREA)
SG1997002983A 1996-10-09 1997-08-19 Magnetoresistance sensor with enhanced magnetoresistive effect SG53048A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/729,260 US5715120A (en) 1996-10-09 1996-10-09 Magnetoresistance sensor with enhanced magnetoresistive effect

Publications (1)

Publication Number Publication Date
SG53048A1 true SG53048A1 (en) 1998-09-28

Family

ID=24930261

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1997002983A SG53048A1 (en) 1996-10-09 1997-08-19 Magnetoresistance sensor with enhanced magnetoresistive effect

Country Status (3)

Country Link
US (1) US5715120A (ko)
KR (1) KR100259431B1 (ko)
SG (1) SG53048A1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100225179B1 (ko) * 1992-11-30 1999-10-15 니시무로 타이죠 박막 자기 헤드 및 자기 저항 효과형 헤드
US5923505A (en) * 1997-03-17 1999-07-13 Read-Rite Corporation Magnetoresistive sensor having a pinned soft magnetic layer
US6103136A (en) 1998-03-23 2000-08-15 Headway Technologies, Inc. Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL)
US6137662A (en) * 1998-04-07 2000-10-24 Read-Rite Corporation Magnetoresistive sensor with pinned SAL
US6452765B1 (en) 1998-11-18 2002-09-17 Read-Rite Corporation CoNbTi as high resistivity SAL material for high-density MR
US6583971B1 (en) * 1999-03-09 2003-06-24 Sae Magnetics (Hk) Ltd. Elimination of electric-pop noise in MR/GMR device
US6398924B1 (en) * 1999-06-29 2002-06-04 International Business Machines Corporation Spin valve sensor with improved pinning field between nickel oxide (NiO) pinning layer and pinned layer
US6687098B1 (en) 1999-07-08 2004-02-03 Western Digital (Fremont), Inc. Top spin valve with improved seed layer
US6421212B1 (en) 1999-09-21 2002-07-16 Read-Rite Corporation Thin film read head structure with improved bias magnet-to-magnetoresistive element interface and method of fabrication
US6728078B2 (en) 2001-06-20 2004-04-27 Hitachi Global Storage Technologies Netherlands B.V. High resistance dual antiparallel (AP) pinned spin valve sensor
US8343319B1 (en) 2008-09-25 2013-01-01 Western Digital (Fremont), Llc Method and system for providing an improved hard bias structure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect
JP2784457B2 (ja) * 1993-06-11 1998-08-06 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗センサ装置
US5491600A (en) * 1994-05-04 1996-02-13 International Business Machines Corporation Multi-layer conductor leads in a magnetoresistive head
US5508866A (en) * 1994-08-15 1996-04-16 International Business Machines Corporation Magnetoresistive sensor having exchange-coupled stabilization for transverse bias layer

Also Published As

Publication number Publication date
US5715120A (en) 1998-02-03
KR100259431B1 (ko) 2000-06-15
KR19980032262A (ko) 1998-07-25

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